Die bonding film used in integrated film packaging, method for manufacturing the same, and method for packaging chips.

JP2026534429APending Publication Date: 2026-10-16WUHAN CHOICE TECHNOLOGY CO LTD
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Patent Information

Application Number
JP2026501561
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-08-27
Filing Date
2025-03-31
Publication Date
2026-10-16

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Abstract

This invention provides a die bonding film for use in integrated film packaging, a method for manufacturing the same, and a chip packaging method. The die bonding film contains, by weight, 20-23 parts phenoxy resin, 50-55 parts silica, 20-25 parts epoxy resin, 5-10 parts curing agent, and 0.3-0.5 parts carbon black. The epoxy resin consists of polyurethane-modified epoxy resin, bisphenol F type epoxy resin, and benzoxazine epoxy resin. By adjusting the ratio of these three resins, the rheological viscosity between the die bonding film and the dicing film can be significantly altered, and the peeling force between the die bonding film and the dicing film can also be altered. This invention allows for the direct use of an integrated film formed from the die bonding film and the dicing film to package chips, followed by marking, cutting, and removal of the dicing film to obtain fully packaged chips, thereby improving the packaging yield and efficiency of chip packaging.
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Description

Technical Field

[0001] The present invention belongs to the field of chip packaging technology, and particularly relates to a die bonding film used for packaging with an integrated film, a manufacturing method thereof, and a chip packaging method.

Background Art

[0002] The packaging process flow of conventional CSP products is: ball mounting (ball mounting - reflow - cleaning) - testing - wafer grinding (film bonding - wafer grinding - film peeling) - die bonding (die bonding - baking) - printing - dicing (wafer mounting - baking - wafer dicing) - sorting. That is, when packaging a chip, it is required to first attach release films to both the front and back surfaces of the die bonding film, peel off the front release film after drying, transfer and attach it to the back surface of the chip, peel off the back release film, cure, print and mark, then coat a dicing film on the die bonding film on the back surface of the chip, perform baking and curing, and then remove the dicing film, so that a single layer of die bonding film is coated on the back surface of the chip to form protection for the chip. However, such a process flow is complicated, and every process will affect the chip packaging effect. In addition, with the rapid development of the electronic information era, the requirements for die bonding films that protect electronic elements are also getting higher and higher. When the die bonding films in the prior art undergo surface peeling with the release film and the dicing film, the toughness of the die bonding film is low, and the bonding capacity with the chip and the dicing film is different, so that the die bonding film cannot be cracked or effectively peeled off, which further affects the effect of chip packaging and reduces the service life of the chip.

[0003] Therefore, a problem for those skilled in the art to solve is how to provide a die bonding film for use in integrated film packaging that improves chip packaging yield and packaging efficiency by adjusting the ratio of polyurethane-modified epoxy resin, bisphenol F type epoxy resin, and benzoxazine epoxy resin to change the rheological viscosity of the die bonding film, and further change the peeling force between the die bonding film and the dicing film. [Overview of the Initiative] [Problems that the invention aims to solve]

[0004] The object of the present invention is to provide a die bonding film for use in integrated film packaging, a method for manufacturing the same, and a method for packaging chips, in order to solve at least one of the above problems. [Means for solving the problem]

[0005] To achieve the above objective, a first aspect of the present invention provides a die bonding film for use in a package made of an integrated film, the die bonding film comprising, by weight, 20 to 23 parts phenoxy resin, 50 to 55 parts silica, 20 to 25 parts epoxy resin, 5 to 10 parts curing agent, and 0.3 to 0.5 parts carbon black, of which the epoxy resin consists of polyurethane-modified epoxy resin, bisphenol F type epoxy resin, and benzoxazine epoxy resin.

[0006] In the first embodiment, the amount of polyurethane-modified epoxy resin is 6 to 8 parts by weight, the amount of bisphenol F-type epoxy resin is 10 to 12 parts by weight, and the amount of benzoxazine epoxy resin is 1 to 4 parts by weight.

[0007] In the first embodiment, the epoxy equivalent of the polyurethane-modified epoxy resin is 160 to 180 g / eq, the epoxy equivalent of the bisphenol F-type epoxy resin is 160 to 180 g / eq, and the epoxy equivalent of the benzoxazine epoxy resin is 180 to 200 g / eq.

[0008] In the first embodiment, the molecular weight of the phenoxy resin is 50,000.

[0009] In the first embodiment, the silica is spherical silica, and the particle size D50 of the spherical silica is 0.25 μm.

[0010] In the first embodiment, the curing agent comprises a naphthol-based curing agent, and the hydroxyl group equivalent of the naphthol-based curing agent is 100 to 120 g / eq.

[0011] In the first embodiment, the average particle size of the carbon black is 20 nm.

[0012] In the first embodiment, the amount of phenoxy resin is 22 parts by weight, the amount of silica is 51.5 parts by weight, the amount of curing agent is 8 parts by weight, and the amount of carbon black is 0.5 parts by weight.

[0013] A second aspect of the present invention provides a method for manufacturing a die bonding film used in a package made of an integrated film as described in the first aspect, the manufacturing method comprising the steps of adding each component in parts by weight into a mixing cup, stirring and mixing to obtain a slurry, wherein the parts by weight of each component specifically include 20 to 23 parts of phenoxy resin, 50 to 55 parts of silica, 20 to 25 parts of epoxy resin, 5 to 10 parts of curing agent, and 0.3 to 0.5 parts of carbon black, of which the epoxy resin consists of polyurethane-modified epoxy resin, bisphenol F type epoxy resin, and benzoxazine epoxy resin, and coating the slurry and drying to obtain a die bonding film.

[0014] A third aspect of the present invention provides a chip packaging method, the method comprising the steps of: transferring and attaching a die bonding film used for packaging with an integrated film as described in the first aspect to a PET release film; covering the upper surface of the die bonding film with a dicing film, removing the PET release film, and forming an integrated film, wherein an adhesive is filled between the dicing film and the die bonding film; transferring and attaching the integrated film to the back surface of a wafer, curing it at 130°C for 2 hours to obtain a temporary package wafer; marking and cutting the temporary package wafer to obtain a temporary package chip; and removing the dicing film from the temporary package chip to obtain a fully packaged chip. [Effects of the Invention]

[0015] The beneficial effects are as follows: The die bonding film used in the integrated film package according to the present invention contains, by weight, 20-23 parts phenoxy resin, 50-55 parts silica, 20-25 parts epoxy resin, 5-10 parts curing agent, and 0.3-0.5 parts carbon black. The epoxy resin consists of polyurethane-modified epoxy resin, bisphenol F type epoxy resin, and benzoxazine epoxy resin. By adjusting the ratio of these three resins, and by using phenoxy resin as a base material, silica as a filler, and carbon black as a dye, the rheological viscosity of the die bonding film at the curing temperature is adjusted by the action of the curing agent. As a result, the die bonding film has strong adhesion to silicon wafers, can be effectively peeled from the dicing film, and provides protection to the chip. Using the die bonding film manufactured according to the present invention, a dicing and die bonding film can be formed as an integrated structure (integrated film) using an adhesive. Furthermore, the integrated film can be directly transferred and attached to the back surface of the wafer. Through a curing reaction, the die bonding film is stably adhered to the back surface of the wafer. After marking, cutting, and removal of the dicing film, a fully packaged chip can be obtained, reducing the flow of the chip packaging process and improving the chip packaging yield and packaging efficiency. [Brief explanation of the drawing]

[0016] Below, in order to more clearly illustrate the embodiments of this specification or the technical solutions in the prior art, the drawings that are necessary for use in the embodiments are briefly introduced. Clearly, the drawings in the following description are only a few embodiments of the present invention, and those skilled in the art can obtain further drawings based on these drawings without any creative work. [Figure 1] This is a flowchart of the chip packaging method according to the present invention. [Figure 2] This is a schematic diagram of the structure of the integrated film according to the present invention. [Modes for carrying out the invention]

[0017] The present invention will be described in detail below with reference to specific embodiments and examples, thereby more clearly demonstrating the advantages and various effects of the present invention. It should be understood by those skilled in the art that these specific embodiments and examples are for illustrative purposes only and do not limit the present invention.

[0018] Throughout this specification, unless otherwise specified, terms used herein are understood to have their meanings as commonly used in the art. Therefore, unless otherwise defined, all technical and scientific terms used herein are identical to those commonly understood by those skilled in the art to which this invention pertains. In the event of any conflict, this specification shall prevail.

[0019] Unless otherwise specified, the various raw materials, reagents, instruments, and equipment used in this invention can all be purchased from the market or obtained by existing methods.

[0020] The overall concept of this invention is as follows: An integrated film can be formed by adding an adhesive between a die bonding film and a dicing film, and the wafer can be protected by directly transferring and attaching the integrated film to the wafer. In the prior art, the dicing film is generally manufactured from polyolefin material, and the die bonding film is generally manufactured from epoxy resin. In practical applications, it is generally necessary to peel the dicing film in the integrated film to improve the protective effect on the wafer by utilizing the performance of the die bonding film. If the peeling force between the dicing film and the die bonding film is large, the die bonding film will be pulled up during the dicing process, reducing the bonding force between the die bonding film and the wafer, and further reducing the protection of the wafer. If the peeling force between the dicing film and the die bonding film is small, cutting cannot be achieved during the dicing process, and furthermore, the wafer cannot be cut into several chips that are fully packaged and meet the dimensional requirements. Therefore, studying the peeling force between the dicing film and the die bonding film is a focus of study for those skilled in the art.

[0021] The die bonding film used in the integrated film package according to the present invention contains, by weight, 20 to 23 parts phenoxy resin, 50 to 55 parts silica, 20 to 25 parts epoxy resin, 5 to 10 parts curing agent, and 0.3 to 0.5 parts carbon black, of which the epoxy resin consists of polyurethane-modified epoxy resin, bisphenol F type epoxy resin, and benzoxazine epoxy resin.

[0022] Specifically, the die bonding film used for the package with the integrated film according to the present invention comprises, in parts by weight, 20 to 23 parts of a phenoxy resin, 50 to 55 parts of silica, 20 to 25 parts of an epoxy resin, 5 to 10 parts of a curing agent, and 0.3 to 0.5 parts of carbon black. Among them, the epoxy resin consists of a polyurethane-modified epoxy resin, a bisphenol F type epoxy resin and a benzoxazine epoxy resin. By adjusting the ratio among the three components of the polyurethane-modified epoxy resin, the bisphenol F type epoxy resin and the benzoxazine epoxy resin, and in combination with using the phenoxy resin as the base material, silica as the filler, and carbon black as the colorant, the rheological viscosity of the die bonding film at the curing temperature is adjusted under the action of the curing agent, so that the die bonding film has strong adhesion to silicon wafers, can be effectively peeled off from the dicing film, and further achieves a protective effect on the chip. With the die bonding film produced by the present invention, an integrated structure (integrated film) can be formed with the dicing via an adhesive, and the integrated film can be directly transferred and attached to the back surface of the wafer. Through the curing reaction, the die bonding film is stably adhered to the back surface of the wafer, and after marking, cutting and dicing film removal, a fully packaged chip can be obtained, which reduces the flow of the chip packaging process, and improves the packaging yield and packaging efficiency of the chip.

[0023] In some possible embodiments, the parts by weight of the polyurethane-modified epoxy resin is 6 to 8 parts, the parts by weight of the bisphenol F type epoxy resin is 10 to 12 parts, and the parts by weight of the benzoxazine epoxy resin is 1 to 4 parts.

[0024] In some possible embodiments, the epoxy equivalent of the polyurethane-modified epoxy resin is 160 to 180 g / eq, the epoxy equivalent of the bisphenol F type epoxy resin is 160 to 180 g / eq, and the epoxy equivalent of the benzoxazine epoxy resin is 180 to 200 g / eq.

[0025] The reasons are that the benzoxazine epoxy resin has a high glass transition temperature after curing (Tg≧170°C), good toughness, low curing shrinkage, can improve the rheological viscosity of the die bonding film at 130°C, and can further adjust the peeling force between the cured die bonding film and the dicing film. By adjusting the proportion among the three components of the polyurethane-modified epoxy resin, bisphenol F type epoxy resin and benzoxazine epoxy resin, the rheological viscosity between the die bonding film and the dicing film can be significantly adjusted, and the peeling force between the die bonding film and the dicing film can be further adjusted. By controlling the parts by weight of the polyurethane-modified epoxy resin to 6 to 8 parts, the parts by weight of the bisphenol F type epoxy resin to 10 to 12 parts, the parts by weight of the benzoxazine epoxy resin to 1 to 4 parts, and the total parts by weight of the three components to 21 parts, a crosslinking reaction occurs between the base material and the curing agent, and the resulting product can be adhered to the back surface of the chip to achieve protection for the chip. The standard name of the polyurethane-modified epoxy resin can be EPU-133, the standard name of the bisphenol F type epoxy resin can be NPEF-170, and the standard name of the benzoxazine epoxy resin can be CB4100.

[0026] In some possible embodiments, the molecular weight of the phenoxy resin is 50000.

[0027] It is understood by those skilled in the art that the phenoxy resin has good flexibility and adhesiveness, and can improve the adhesion to the chip. The standard name of the phenoxy resin can be 019M.

[0028] In some possible embodiments, the silica is spherical silica, and the particle diameter D50 of the spherical silica is 0.25 μm.

[0029] One possible reason for this is that spherical silica is used as a filler to improve the mechanical strength of the die bonding film, preferably with a spherical silica particle size D50 of 0.25 μm. This prevents the spherical silica from flowing through the molten die bonding film (during the curing and crosslinking process of the die bonding film) and further prevents it from affecting the chip packaging effect.

[0030] In some possible embodiments, the curing agent comprises a naphthol-based curing agent, and the hydroxyl group equivalent of the naphthol-based curing agent is 100 to 120 g / eq.

[0031] As those skilled in the art will understand, an addition reaction is generated by utilizing the hydroxyl groups in the naphthol-based curing agent and the epoxy groups in the epoxy resin to form a segment of the cured product, and the linear molecules are crosslinked into a systemic structure molecule through a stepwise polymerization reaction, thereby improving the strength of the die bonding film.

[0032] In some examples, the average particle size of the carbon black is 20 nm.

[0033] One possible reason for this is that when carbon black is used as a dye, and preferably with an average particle size of 20 nm, the carbon black may flow through the die bonding film, preventing it from affecting the chip's packaging effect.

[0034] In some possible embodiments, the amount of phenoxy resin is 22 parts by weight, the amount of silica is 51.5 parts by weight, the amount of curing agent is 8 parts by weight, and the amount of carbon black is 0.5 parts by weight.

[0035] Based on the same overall inventive concept, a second aspect of the present invention provides a method for manufacturing a die bonding film used in a package made of an integrated film as described in the first aspect, the manufacturing method comprising the steps of adding each component in its respective weight parts to a mixing cup, stirring and mixing to obtain a slurry, wherein the weight parts of each component specifically include 20-23 parts of phenoxy resin, 50-55 parts of silica, 20-25 parts of epoxy resin, 5-10 parts of curing agent, and 0.3-0.5 parts of carbon black, of which the epoxy resin consists of polyurethane-modified epoxy resin, bisphenol F type epoxy resin, and benzoxazine epoxy resin, and coating and drying the slurry to obtain a die bonding film.

[0036] By weighing each component according to the mixing ratio of the first embodiment, stirring them uniformly to obtain a slurry, coating the sizing agent onto the PET release film, drying it, removing the small molecule solvent, and peeling off the PET release film, a die bonding film can be obtained.

[0037] Based on the same overall inventive concept, with reference to Figure 1, a third aspect of the present invention provides a chip packaging method. Step S1 involves transferring the die bonding film used in the integrated film package described in the first embodiment to a PET release film and attaching it, Step S2 involves covering the upper surface of the die bonding film with a dicing film, removing the PET release film, and forming an integrated film, wherein an adhesive is filled between the dicing film and the die bonding film. Step S3 involves transferring the integrated film to the back surface of the wafer and attaching it, curing it at 130°C for 2 hours, and obtaining a temporary package wafer. Step S4 involves marking and cutting the aforementioned temporary package wafer to obtain a temporary package chip. The step includes removing the dicing film from the temporary package chip to obtain a fully packaged chip (step S5).

[0038] Specifically, the die bonding film manufactured in the second embodiment is transferred to and attached to a PET release film, a PO dicing film is applied to the die bonding film, and an adhesive is filled between the die bonding film and the PO dicing film to form an integrated film (shown in Figure 2). The integrated film is then directly attached to the back surface of an 8-inch or 2-inch wafer using a hot press machine, cured at 130°C for 2 hours to stably adhere the die bonding film to the back surface of the wafer, followed by marking and cutting of the wafer to obtain multiple chips of the target dimensions and information, and finally the dicing film is removed to obtain a packaged chip. Compared to conventional chip packaging methods, the chip packaging method according to the present invention reduces processes such as attaching and peeling off PET release films to the front and back surfaces of the die bonding film, heating and attaching the dicing film, curing, and dicing, resulting in a simpler and easier-to-operate packaging method, and significantly improving the packaging efficiency and yield of the chip package.

[0039] As shown in Figure 2, the present invention provides an integrated film in which a die bonding film 2 is attached to the upper surface of a PET release film 1, and an adhesive 3 is coated to attach a dicing film 4 to the upper surface of the die bonding film 2. The resulting integrated film can be directly used for wafer / chip packaging. Preferably, the thickness of the PET release film 1 is 50 μm, the thickness of the die bonding film 2 is 25 μm, the thickness of the adhesive 3 is 10 μm, and the thickness of the dicing film 4 is 78 μm.

[0040] The present invention will be further described below with reference to specific examples. It should be understood that these examples are used solely for illustrative purposes and do not limit the scope of the present invention. Experimental methods in the following examples where specific conditions are not specified are generally measured according to national standards. If no applicable national standard exists, the method should be carried out according to general international standards, standard conditions, or conditions recommended by the manufacturer.

[0041] The components of the die bonding films in Examples 1-4 and Comparative Examples 1-4 are shown in Table 1 below, in parts by weight.

[0042] [Table 1] Table 1. Parts by weight of raw material components JPEG2026534429000002.jpg109151

[0043] Post-curing peel strength tests, 130°C rheological viscosity tests, Tg tests, and silicon wafer adhesion tests were performed on the die bonding films according to Examples 1-4 and Comparative Examples 1-4. The specific test procedures are as follows. 1. For the post-curing peel strength (die bonding film / dicing film) test, three samples were taken from the left, center, and right sides of the fully coated finished product (integrated film, die bonding film, and dicing film). The sample size was 25 mm x 150 mm, and the samples were taken in the MD direction of coating. The samples were heated and attached to a PET release film and cured. The dicing film was peeled off using a tensile machine at 23 ± 2 °C, 65 ± 5% RH, at a speed of 300 mm / min, stroke of 120 mm, and 180 °C. The value of the flattest (most stable curve) at the 120 mm stroke was recorded, and the average value of the three measurements was recorded as the adhesive strength (peel strength) of the die bonding film of the sample to the dicing film. 2. The 130°C rheological viscosity test method involves heating the die bonding film to a release film at 100°C / 2kg, transferring and attaching it to form a laminated die, laminating it to a thickness of 1.2~1.3mm, testing the laminated die with a rheology meter, selecting the "Variable rotational speed rotational viscosity + curing modulus" program, and using the 130°C viscosity value from the fourth stage program as the melt viscosity at 130°C. 3. For the Tg test, 55-60 sample chips of 25 μm thickness or 35-40 sample chips of 40 μm thickness are heated and attached to a thick laminated die at 100°C / 2 kg. The sample die is then cut to 10 mm x 55 mm and placed in a mold. Subsequently, it is heated and cured at 180°C for 1 hour. The cured sample is used as the sample for measuring the DMA storage modulus. Thermal analysis is performed using a DMA dynamic thermomechanical analyzer, raising the temperature from room temperature to 250°C. After the measurement is complete, the glass transition temperature value is read. 4. For the silicon wafer adhesion strength test, a sample of approximately 400 mm x 250 mm was cut from a lot of coated die bonding film, and this was cut into small blocks of approximately 2 mm x 2 mm to form test sample blocks. The die bonding film was bonded to the surface of a 10 mm x 10 mm x 0.7 mm silicon wafer heated to 80°C. Another 2 mm x 2 mm x 0.7 mm silicon wafer was placed over the die bonding film of the silicon wafer, and the excess bonding film on the 2 mm x 2 mm edge was trimmed so that the die bonding film was bonded between the silicon wafers. The sample was then clamped with stainless steel clips and cured in an oven at 100°C for 30 minutes + 165°C for 60 minutes. The peeling force was tested at a 180° angle using a multi-functional shear force measuring device, and measurements were taken with n=3, with the average value for each lot being used as the measured value.

[0044] The test results are shown in Table 2 below.

[0045] [Table 2] Table 2 Test Results JPEG2026534429000003.jpg102151

[0046] As is clear from the table above, (1) In Comparative Example 1, benzoxazine epoxy resin was not added, resulting in low silicon wafer adhesion and Tg of the manufactured die bonding film, a large peel force between the cured die bonding film and the dicing film, and making it easy to move the die bonding film during the dicing film peeling process, which is unfavorable for chip packaging. (2) In Comparative Example 2, an excess amount of benzoxazine epoxy resin was added, resulting in a die bonding film with high silicon wafer adhesion and Tg, and a high rheological viscosity at 130°C, which was unfavorable for wafer cutting. (3) In Comparative Example 3, no polyurethane-modified epoxy resin was added, and the resulting die bonding film had high silicon wafer adhesion and Tg, and high rheological viscosity at 130°C, which was unfavorable for wafer cutting. (4) In Comparative Example 4, no bisphenol F type epoxy resin was added. The resulting die bonding film had high silicon wafer adhesion, but its Tg was low, and its rheological viscosity at 130°C was also low. The silica and carbon black flowed easily in a molten state, which was unfavorable for chip packaging. (5) The epoxy resins in Examples 1 to 4 were in the specified proportions, and the manufactured die bonding films had an appropriate peel strength (400 to 2000 mN / 25 mm) from the dicing film after curing, and did not affect the thickness of the dicing film peeled from the die bonding film or the packaging effect on the chip by the die bonding film.

[0047] As explained above, in this invention, the post-curing peel force between the PO dicing film and the die bonding film and the rheological viscosity of the die bonding film at a curing temperature of 130°C are negatively correlated. By adjusting the ratio of the polyurethane-modified epoxy resin, bisphenol F type epoxy resin, and benzoxazine epoxy resin, the rheological viscosity between the die bonding film and the dicing film can be significantly altered, and the peel force between the die bonding film and the dicing film can be further altered. Furthermore, since the PO dicing film and the die bonding film are manufactured as an integrated film, the integrated film is directly attached to the back surface of the wafer, and after crosslinking and curing of the epoxy resin and curing agent, the die bonding film in the integrated film adheres stably to the wafer, and effective peeling of the dicing film in the integrated film can be achieved, providing protective effects such as insulation and heat insulation to the chip.

[0048] Finally, the terms “include,” “incorporate,” or any other variation thereof are intended to include non-exclusive inclusion, thereby including not only those elements but also other elements not explicitly listed, or elements specific to such a process, method, article, or apparatus.

[0049] While preferred embodiments of the present invention have been described, those skilled in the art, knowing the basic creative concepts, can make other changes and modifications to these embodiments. Therefore, the appended claims are construed to encompass all changes and modifications that fall within the scope of the preferred embodiments and the present invention.

[0050] Clearly, those skilled in the art can make various modifications and variations to the present invention without departing from the spirit and scope of the invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and the equivalent art, the present invention is intended to include these modifications and variations. [Explanation of symbols]

[0051] 1...PET release film, 2...Die bonding film, 3...Adhesive, 4...Dicing film.

Claims

1. A die bonding film for use in a package made of a single film, wherein the die bonding film contains, by weight, 20 to 23 parts phenoxy resin, 50 to 55 parts silica, 20 to 25 parts epoxy resin, 5 to 10 parts curing agent, and 0.3 to 0.5 parts carbon black, and of which the epoxy resin consists of polyurethane-modified epoxy resin, bisphenol F type epoxy resin, and benzoxazine epoxy resin. The amount of the polyurethane-modified epoxy resin is 6 to 8 parts by weight, the amount of the bisphenol F-type epoxy resin is 10 to 12 parts by weight, and the amount of the benzoxazine epoxy resin is 1 to 4 parts by weight. A die bonding film for use in a package made of a single-piece film, characterized in that the epoxy equivalent of the polyurethane-modified epoxy resin is 160 to 180 g / eq, the epoxy equivalent of the bisphenol F type epoxy resin is 160 to 180 g / eq, and the epoxy equivalent of the benzoxazine epoxy resin is 180 to 200 g / eq.

2. The die bonding film for use in a package made of an integrated film according to claim 1, characterized in that the molecular weight of the phenoxy resin is 50,000.

3. The die bonding film for use in a package made of an integrated film according to claim 1, characterized in that the silica is spherical silica and the particle size D50 of the spherical silica is 0.25 μm.

4. The die bonding film for use in a package made of an integrated film according to claim 1, characterized in that the curing agent comprises a naphthol-based curing agent, and the hydroxyl group equivalent of the naphthol-based curing agent is 100 to 120 g / eq.

5. The die bonding film used in a package made of an integrated film according to claim 1, characterized in that the average particle size of the carbon black is 20 nm.

6. A die bonding film for use in a package made of an integrated film according to claim 1, characterized in that the amount of phenoxy resin is 22 parts by weight, the amount of silica is 51.5 parts by weight, the amount of curing agent is 8 parts by weight, and the amount of carbon black is 0.5 parts by weight.

7. A method for manufacturing a die bonding film used in a package made of an integrated film according to any one of claims 1 to 6, The step of adding each component in its respective weight parts to a mixing cup, stirring and mixing to obtain a slurry, wherein the weight parts of each component specifically include 20 to 23 parts of phenoxy resin, 50 to 55 parts of silica, 20 to 25 parts of epoxy resin, 5 to 10 parts of curing agent, and 0.3 to 0.5 parts of carbon black, and the epoxy resin consists of polyurethane-modified epoxy resin, bisphenol F type epoxy resin, and benzoxazine epoxy resin. A method for producing a die bonding film for use in a package made of an integrated film, comprising the steps of coating the slurry and drying it to obtain a die bonding film.

8. A chip packaging method, A step of transferring a die bonding film used in a package made of an integrated film according to any one of claims 1 to 6 to a PET release film and attaching it, A step of covering the upper surface of the die bonding film with a dicing film, removing the PET release film, and forming an integrated film, wherein an adhesive is filled between the dicing film and the die bonding film. The steps include transferring the integrated film to the back surface of the wafer and attaching it, curing it at 130°C for 2 hours, and obtaining a temporary package wafer. The steps include marking and cutting the aforementioned temporary package wafer to obtain a temporary package chip, A chip packaging method characterized by comprising the step of removing the dicing film from the temporary package chip to obtain a fully packaged chip.