Inhibitor compounds for selectively passivating surfaces

Abstract

A method for selectively passivating a metal, and related systems and methods are provided. This method comprises one or more of the following steps: The substrate is exposed to an inhibitor compound containing an alkyne compound functionalized with at least one alkoxy group to form a first layer on the metal surface of the substrate, and The substrate is exposed to a precursor vapor to form a second layer on the non-metallic surface of the substrate. This includes other methods and systems provided herein.

Description

Technical Field

[0001] The present disclosure relates to inhibitor compounds for selectively passivating surfaces, as well as related systems and related methods.

[0002] Cross-Reference to Related Applications This application claims the benefit under 35 U.S.C. §119 of U.S. Provisional Patent Application No. 63 / 541678, filed on September 29, 2023, the disclosure of which is hereby incorporated by reference in its entirety into the present specification.

Background Art

[0003] A precursor is deposited on the surface of a substrate. The precursor may be undesirably deposited on the surface. When the precursor is deposited in this manner, the deposited precursor must be removed from the relevant surface.

Summary of Invention

[0004] Some embodiments of the present disclosure relate to methods. In some embodiments, the method includes one or more of the following steps: - exposing the substrate to an inhibitor compound to form a first layer on the metal surface of the substrate, and - exposing the substrate to precursor vapor to form a second layer on the non-metallic surface of the substrate. In some embodiments, the inhibitor compound comprises an alkyne compound functionalized with at least one alkoxy group.

[0005]

[0005] Some embodiments relate to compositions. In some embodiments, the composition comprises an inhibitor compound. In some embodiments, the inhibitor compound comprises an alkyne compound functionalized with at least one alkoxy group. In some embodiments, the inhibitor compound is present in the composition at a purity of at least 95%. In some embodiments, the inhibitor compound is configured to selectively deposit precursor vapor onto the non-metallic surface of the substrate.

[0006] Some embodiments relate to a method. In some embodiments, the method includes one or more of the following steps: A step of obtaining a substrate having at least one metal surface and at least one non-metal surface. - A step of exposing a substrate to an inhibitor compound containing an alkyne compound functionalized with at least one alkoxy group, and • A step of depositing an inhibitor compound onto at least one metal surface of a substrate.

[0007] Some embodiments of this disclosure are described herein by reference only to the accompanying drawings. The drawings are referred to hereby in detail and specifically, emphasizing that these embodiments are illustrative only and intended to illustrate the embodiments of this disclosure. In this regard, this specification, together with the drawings, will make it clear to those skilled in the art how the embodiments of this disclosure can be carried out. [Brief explanation of the drawing]

[0008] [Figure 1] This is a flowchart of a method for selectively passivating a surface according to several embodiments. [Figure 2] This is a flowchart of a method for selectively depositing inhibitor compounds according to several embodiments. [Modes for carrying out the invention]

[0009]

[0010] Other purposes and advantages of this disclosure, among the disclosed merits and improvements, will become apparent from the following description in conjunction with the accompanying drawings. Detailed embodiments of this disclosure are disclosed herein. However, it should be understood that the embodiments of this disclosure are merely descriptions of the various forms in which this disclosure can be realized. In addition, each example shown with respect to the various embodiments of this disclosure is intended for illustrative purposes only and not to limit them.

[0010] Any prior patents and publications referenced herein are incorporated by reference in their entirety.

[0011] Throughout this specification and the claims, unless the context clearly indicates otherwise, the following terms have the meanings expressly associated herein. The phrases “in one embodiment,” “in an embodiment,” and “in some embodiments,” as used herein, may refer to the same embodiment, but not necessarily the same embodiment. Furthermore, the expressions “in another embodiment” and “in some other embodiments,” as used herein, may refer to different embodiments, but not necessarily different embodiments. All embodiments of this disclosure are intended to be combinable without departing from the scope or spirit of this disclosure.

[0012] As used herein, the term "based on" is not exclusive and may be based on additional factors not mentioned unless the context clearly indicates otherwise. In addition, throughout this specification, the meanings of "a," "an," and "the" include references to the plural. The meaning of "in" includes "in" and "on."

[0013] As used here, the term "alkyl" refers to hydrocarbon compounds having 1 to 30 carbon atoms. Alkyl compounds having n carbon atoms are called "C n It can be called "alkyl". For example, "C3 alkyl" may include n-propyl and isopropyl. For example, alkyls having carbon atoms in the range of 1 to 30 are C1-C 30It may be referred to as alkyl. In some embodiments, the alkyl is linear. In some embodiments, the alkyl is branched. In some embodiments, the alkyl is substituted. In some embodiments, the alkyl is unsubstituted. In some embodiments, the alkyl is C1 to C 10 alkyl, C1-C9 alkyl, C1-C8 alkyl, C1-C7 alkyl, C1-C6 alkyl, C1-C5 alkyl, C1-C4 alkyl, C1-C3 alkyl, C2-C 10 alkyl, C3-C 10 alkyl, C4-C 10 alkyl, C5-C 10 alkyl, C6-C 10 alkyl, C7-C 10 alkyl, C8-C 10 alkyl, C2-C9 alkyl, C2-C8 alkyl, C2-C7 alkyl, C2-C6 alkyl, C2-C5 alkyl, at least one of C3-C5 alkyl, or any combination thereof, or is selected from the group consisting of the foregoing. In some embodiments, the alkyl is selected from the group consisting of, or comprises at least one of methyl, ethyl, n-propyl, 1-methylethyl (iso-propyl), n-butyl, isobutyl, sec-butyl, n-pentyl, 1,1-dimethylethyl (tert-butyl), n-pentyl, iso-pentyl, tert-pentyl, n-hexyl, isohexyl, 3-methylhexyl, 2-methylhexyl, heptyl, octyl, nonyl, decyl, dodecyl, octadecyl, and any combination thereof.

[0014]

[0015] As used herein, the term “alkenyl” refers to a hydrocarbon chain radical having 1 to 10 carbon atoms and at least one carbon-carbon double bond. Examples of alkenyl groups include vinyl, allyl, 1-methylvinyl, 1-propenyl, 1-butenyl, 2-butenyl, 3-butenyl, 1,3-butadienyl, 2-methyl-1-propenyl, 2-methyl-2-propenyl, 1-pentenyl, 2-pentenyl, 3-pentenyl, 4-pentenyl, 1,3-pentadienyl, 2,4-pentadienyl, 1,4-pentadienyl, 3-methyl-2-butenyl, 1-hexenyl, 2- This includes, but is not limited to, at least one of hexenyl, 3-hexenyl, 1,3-hexadienyl, 1,4-hexadienyl, 2-methylpentenyl, 1-heptenyl, 3-heptenyl, 1-octenyl, 1,3-octadienyl, 1-nonenyl, 2-nonenyl, 3-nonenyl, 1-decenyl, 3-decenyl, 1-undecenyl, oleyl, linoleyl, and linolenyl, or any combination thereof.

[0015] As used herein, the term "alkynyl" refers to a hydrocarbon chain radical having 1 to 10 carbon atoms and at least one carbon-carbon triple bond. Examples of alkynyl groups include, but are not limited to, at least one of ethynyl, propynyl, n-butynyl, n-pentynyl, 3-methyl-1-butynyl, n-hexynyl, methylpentynyl, or any combination thereof.

[0016] As used herein, the term “alkoxy” refers to a radical of formula -OR, where R is an alkyl as defined herein. In some embodiments, the mixture may include, consist of, or substantially consist of, at least one of methoxy, ethoxy, methoxy, ethoxy, n-propoxy, 1-methylethoxy (isopropoxy), n-butoxy, iso-butoxy, sec-butoxy, tert-butoxy, and tert-pentoxy, or any combination thereof.

[0017] As used herein, the term “metal” refers to at least one of alkali metals, alkaline earth metals, transition metals, post-transition metals, lanthanides, actinides, or any combination thereof. In some embodiments, for example, the metal includes or is selected from the group consisting of transition metals. In some embodiments, the transition metal includes at least one of scandium (Sc), yttrium (Y), titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (Co), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), zinc (Zn), cadmium (Cd), and mercury (Hg), or any combination thereof, or selected from the group consisting of these. In some embodiments, the metal is in ionic form, elemental form, or any combination thereof.

[0018] Some embodiments relate to inhibitor compounds for selectively passivating surfaces. In some embodiments, the inhibitor compound selectively deposits a precursor material onto a surface. In some embodiments, for example, the inhibitor compound selectively passivates a metal surface of a substrate. In some embodiments, the inhibitor compound does not passivate a non-metallic surface of a substrate. In some embodiments, when the non-metallic surface of the substrate is exposed to the precursor material, the precursor material is deposited on the non-metallic surface. In some embodiments, the precursor material is not deposited on the metal surface of the substrate, which remains passivated by the inhibitor compound. In some embodiments, the precursor material is deposited on the metal surface of the substrate in the absence of the inhibitor compound. In some embodiments, the inhibitor compounds disclosed herein enable the selective deposition of the precursor material on a non-metallic surface.

[0019]

[0020] The inhibitor compounds, as well as related systems and methods disclosed herein, may be useful in the manufacture of microelectronic devices (including semiconductor devices, etc.). For example, precursor materials may be used to form films or layers by one or more deposition processes. Examples of deposition processes include, but are not limited to, at least one of the following, or any combination thereof: chemical vapor deposition (CVD), digital or pulsed chemical vapor deposition, plasma-enhanced periodic chemical vapor deposition (PECCVD), fluid chemical vapor deposition (FCVD), atomic layer deposition (ALD), thermal atomic layer deposition, plasma-enhanced atomic layer deposition (PEALD), metal-organic chemical vapor deposition (MOCVD), and plasma-enhanced chemical vapor deposition (PECVD).

[0020] Some embodiments relate to compositions. In some embodiments, the composition contains an inhibitor compound.

[0021] In some embodiments, the inhibitor compound comprises an alkyne compound functionalized with at least one alkoxy group.

[0022] In some embodiments, the inhibitor compound is a compound of the following formula: TIFF2026534491000002.tif29170 formula, R 1 C1~C 10 Alkyl, C1-C 10 Alkenyl, or C1-C 10 It comprises at least one of the alkynnyls, or any combination thereof; R 2 is hydrogen, C1~C 10 Alkyl, C1-C 10 Alkenyl, C1~C 10 Alkinyl, C1~C 10 It contains at least one alkoxy, or any combination thereof.

[0023] In some embodiments, the inhibitor compound is a compound of the following formula: TIFF2026534491000003.tif29170 formula, R 1 C1-C 10 Alkyl, C1-C 10 Alkenyl, or C1-C 10 It contains at least one of the alkynnyl compounds, or any combination thereof.

[0024]

[0030] In some embodiments, the inhibitor compound comprises at least one of the following compounds: TIFF2026534491000004.tif108170.

[0025] In some examples, the inhibitor compound is configured to selectively deposit a precursor vapor onto a non-metallic surface of the substrate.

[0026] In some embodiments, the composition contains an inhibitor compound. In some embodiments, the container may contain the composition. In some embodiments, the purity of the inhibitor compound present in the composition is at least 95%. In some embodiments, the purity of the inhibitor compound present in the composition is at least 50%, at least 55%, at least 60%, at least 65%, at least 70%, at least 75%, at least 80%, at least 85%, at least 90%, at least 91%, at least 92%, at least 93%, at least 94%, at least 95%, or higher. In some embodiments, the purity of the inhibitor compound present in the composition is within any range between 95% and 99.9999%, 95% and 99.999%, 95% and 99.99%, 95% and 99.9%, 95% and 99%, 96% and 99%, 97% and 99%, 98% and 99%, 95% and 98%, 95% and 97%, 95% and 96%, 98% and 99.9%, 99% and 99.9%, 99% and 99.99%, 99% and 99.999%, or any sub-range between 95% and 99.9999%.

[0027] Figure 1 is a flowchart of method 100 for selectively passivating a surface according to several embodiments. As shown in Figure 1, method 100 for selectively passivating a surface comprises one or more of the following steps: step 102, exposing a substrate to an inhibitor compound to form a first layer on the metallic surface of the substrate; and step 104, exposing the substrate to a precursor vapor to form a second layer on the non-metallic surface of the substrate.

[0028] In some embodiments, step 102 includes method 100 exposing the substrate to an inhibitor compound to form a first layer on the metal surface of the substrate.

[0029]

[0035] In some embodiments, the inhibitor compound comprises an alkyne compound functionalized with at least one alkoxy group.

[0030] In some embodiments, the inhibitor compound is a compound of the following formula: TIFF2026534491000005.tif29170 formula, R 1 C1~C 10 Alkyl, C1-C 10 Alkenyl, or C1-C 10 It comprises at least one of the alkynnyls, or any combination thereof; R 2 is hydrogen, C1~C 10 Alkyl, C1-C 10 Alkenyl, C1~C 10 Alkinyl, C1~C 10 It contains at least one alkoxy, or any combination thereof.

[0031]

[0040] In some embodiments, the inhibitor compound is a compound of the following formula: TIFF2026534491000006.tif29170 formula, R 1 These are independent of C1~C 10 Alkyl, C1-C 10 Alkenyl, or C1-C10 It contains at least one of the alkynnyl compounds, or any combination thereof.

[0032] In some embodiments, the inhibitor compound comprises at least one of the following compounds: TIFF2026534491000007.tif114170

[0033] In some examples, the inhibitor compound is configured to selectively deposit the precursor vapor onto a non-metallic surface of the substrate.

[0034]

[0045] It would be appreciated that any of the inhibitor compounds disclosed herein can be used without departing from the scope of this disclosure.

[0035] In some embodiments, exposure includes bringing a substrate into contact with an inhibitor compound. In some embodiments, contact refers to bringing the substrate and the inhibitor compound close together or near each other. In some embodiments, contact refers to direct physical contact between the substrate and the inhibitor compound. In some embodiments, exposure includes introducing the inhibitor compound into a chamber containing the substrate. In some embodiments, exposure includes pumping the inhibitor compound from one location into a chamber containing the substrate. In some embodiments, exposure includes supplying the inhibitor compound to the substrate. In some embodiments, exposure includes vaporizing the inhibitor compound. In some embodiments, exposure includes flowing the inhibitor compound from one location into a chamber containing the substrate. In some embodiments, exposure includes supplying the inhibitor compound into a chamber containing the substrate. In some embodiments, exposure of the substrate to the inhibitor compound includes pulsing the inhibitor compound into a chamber containing the substrate.

[0036] The substrate may have at least one metallic surface. As used herein, a metallic surface means a surface containing a metal. In some embodiments, at least one metallic surface of the substrate contains or is formed from a metallic component. In some embodiments, the metallic component includes at least one of elemental metals, metal alloys, metal composites, metal mixtures, metal compounds, metal salts, or any combination thereof. In some embodiments, the metallic component contains a metal. In some embodiments, the metal contains an alkali metal. In some embodiments, the metal contains an alkaline earth metal. In some embodiments, the metal contains a transition metal. In some embodiments, the metal contains a post-transition metal. In some embodiments, the metal contains a lanthanide. In some embodiments, the metallic surface contains at least one of copper, tungsten, cobalt, ruthenium, or any combination thereof, or any combination thereof.

[0037] The substrate may have at least one nonmetallic surface. As used herein, a nonmetallic surface refers to a surface that does not contain metal. In some embodiments, at least one nonmetallic surface of the substrate contains or is formed from a nonmetallic component. In some embodiments, the nonmetallic component includes a dielectric material. In some embodiments, the nonmetallic component includes an insulating material. In some embodiments, the nonmetallic component includes a low dielectric constant material. In some embodiments, a ceramic material. In some embodiments, the nonmetallic component includes a polymer material. In some embodiments, the nonmetallic component includes a semiconductor material. In some embodiments, the nonmetallic surface of the substrate contains a dielectric material. In some embodiments, the nonmetallic surface is HfO2, ZrO2, HfAlO2 x , HfSiO x The nonmetallic surface includes at least one of Al2O3, SiCN, SiOC, or any combination thereof. In some embodiments, the nonmetallic surface includes at least one of silicon dioxide (SiO2), silicon oxycarbide, aluminum oxide, silicon nitride, tantalum nitride, titanium nitride, or aluminum nitride, or any combination thereof.

[0038] In some embodiments, the substrate is exposed at temperatures between 100°C and 400°C, or any range between 100°C and 400°C or a sub-range thereof. In some embodiments, the substrate is exposed at temperatures between 100°C and 380°C, 100°C and 360°C, 100°C and 340°C, 100°C and 320°C, 100°C and 300°C, 100°C and 280°C, 100°C and 260°C, 100°C and 240°C, 100°C and 220°C, 100°C and 200°C, 100°C and 180°C, 100°C and 160°C, 100°C and 140°C, or 100°C and 120°C. In some embodiments, the exposure of the substrate proceeds at temperatures of 120°C to 400°C, 140°C to 400°C, 160°C to 400°C, 180°C to 400°C, 200°C to 400°C, 220°C to 400°C, 240°C to 400°C, 260°C to 400°C, 280°C to 400°C, 300°C to 400°C, 320°C to 400°C, 340°C to 400°C, 360°C to 400°C, or 380°C to 400°C.

[0039]

[0050] In some embodiments, exposure proceeds at pressures of 0.1 Torr to 50 Torr, or any range or subdivisions therein. In some embodiments, the pressure is in the range of 0.1 Torr to 45 Torr, 0.1 Torr to 40 Torr, 0.1 Torr to 35 Torr, 0.1 Torr to 30 Torr, 0.1 Torr to 25 Torr, 0.1 Torr to 20 Torr, 0.1 Torr to 15 Torr, 0.1 Torr to 10 Torr, 0.1 Torr to 5 Torr, 0.1 Torr to 1 Torr, 0.1 Torr to 0.2 Torr, 0.1 Torr to 50 Torr, 0.2 Torr to 50 Torr, 5 Torr to 50 Torr, 10 Torr to 50 Torr, 15 Torr to 50 Torr, 20 Torr to 50 Torr, 25 Torr to 50 Torr, 30 Torr to 50 Torr, 35 Torr to 50 Torr, 40 Torr to 50 Torr, or 45 Torr to 50 Torr.

[0040] In some embodiments, by exposing the substrate to an inhibitor compound, the first layer is not formed on the nonmetallic surface of the substrate.

[0041] In some embodiments, under vacuum, the substrate is heated to a temperature sufficient to remove at least a portion of the inhibitor compound from the metal surface of the substrate.

[0042] In some embodiments, step 104 of method 100 includes exposing the substrate to a precursor material to form a second layer on the nonmetallic surface of the substrate.

[0043] In some embodiments, exposure includes bringing the substrate and the precursor material into contact. In some embodiments, contact refers to bringing the substrate and the precursor material close together or near each other. In some embodiments, contact refers to direct, physical contact between the substrate and the precursor material. In some embodiments, exposure includes introducing the precursor material into a chamber containing the substrate. In some embodiments, exposure includes pumping the precursor material from one location into a chamber containing the substrate. In some embodiments, exposure includes supplying the precursor material to the substrate. In some embodiments, exposure includes vaporizing the precursor material. In some embodiments, exposure includes flowing the precursor material from one location into a chamber containing the substrate. In some embodiments, exposure includes supplying the precursor material to a chamber containing the substrate. In some embodiments, exposure of the substrate to an inhibitor compound includes pulsing the precursor material into a chamber containing the substrate. In some embodiments, the precursor material includes precursor vapor. In some examples, exposure of the substrate to precursor vapor prevents the formation of a second layer on the metal surface of the substrate.

[0044]

[0055] In some embodiments, the substrate is exposed at temperatures between 100°C and 400°C, or any range between 100°C and 400°C or sub-ranges thereof. In some embodiments, the substrate is exposed at temperatures between 100°C and 380°C, 100°C and 360°C, 100°C and 340°C, 100°C and 320°C, 100°C and 300°C, 100°C and 280°C, 100°C and 260°C, 100°C and 240°C, 100°C and 220°C, 100°C and 200°C, 100°C and 180°C, 100°C and 160°C, 100°C and 140°C, or 100°C and 120°C. In some embodiments, the exposure of the substrate proceeds at temperatures of 120°C to 400°C, 140°C to 400°C, 160°C to 400°C, 180°C to 400°C, 200°C to 400°C, 220°C to 400°C, 240°C to 400°C, 260°C to 400°C, 280°C to 400°C, 300°C to 400°C, 320°C to 400°C, 340°C to 400°C, 360°C to 400°C, or 380°C to 400°C.

[0045] In some embodiments, exposure proceeds at pressures of 0.1 Torr to 50 Torr, or any range within that range or sub-range. In some embodiments, the pressure is in the range of 0.1 Torr to 45 Torr, 0.1 Torr to 40 Torr, 0.1 Torr to 35 Torr, 0.1 Torr to 30 Torr, 0.1 Torr to 25 Torr, 0.1 Torr to 20 Torr, 0.1 Torr to 15 Torr, 0.1 Torr to 10 Torr, 0.1 Torr to 5 Torr, 0.1 Torr to 1 Torr, 0.1 Torr to 0.2 Torr, 0.1 Torr to 50 Torr, 0.2 Torr to 50 Torr, 5 Torr to 50 Torr, 10 Torr to 50 Torr, 15 Torr to 50 Torr, 20 Torr to 50 Torr, 25 Torr to 50 Torr, 30 Torr to 50 Torr, 35 Torr to 50 Torr, 40 Torr to 50 Torr, or 45 Torr to 50 Torr.

[0046] As described above, the precursor material may include any source precursor material (including vaporizable precursor material). In some embodiments, the precursor material may be dimethylhydrazine, trimethylaluminum (TMA), hafnium chloride (HfCl4), zirconium chloride (ZrCl4), indium trichloride, indium monochloride, aluminum trichloride, titanium iodide, carbonyl tungsten, Ba(DPM)2, bis-dipivaloylmethanatostrontium (Sr(DPM)2), TiO(DPM)2, tetra-dipivaloylmethanatozirconium (Zr(DPM)4), decaborane, octadecaborane, boron, magnesium, gallium, indium, antimony, copper, phosphorus, arsenic, lithium, sodium tetrafluoroborate, precursors incorporating alkylamidinate ligands, organometallic precursors, zirconium tert-butoxide (Zr(t-OBu)4), tetra-quiszie The material comprises at least one of the following: tylaminozirconium (Zr(Net2)4), tetrakisdiethylaminohafnium (Hf(Net2)4), tetrakis(dimethylamino)titanium (TDMAT), tert-butyliminotris(diethylamino)tantalum (TBTDET), pentakis(dimethylamino)tantalum (PDMAT), pentakis(ethylmethylamino)tantalum (PEMAT), tetrakisdimethylaminozirconium (Zr(NMe2)4), hafnium tert-butoxide (Hf(tOBu)4), xenon difluoride (XeF2), xenon tetrafluoride (XeF4), xenon hexafluoride (XeF6), or any combination thereof, or consists of these, or substantially consists of these, or is selected from the group consisting of these.

[0047] In some embodiments, the precursor material includes, or consists of, or substantially consists of, or is selected from the group consisting of, at least one of the following: decaborane, hafnium tetrachloride, zirconium tetrachloride, indium trichloride, metal-organic β-diketnate complexes, tungsten hexafluoride, cyclopentadienylcycloheptatrienyl titanium (CpTiCht), aluminum trichloride, titanium iodide, cyclooctatetraenecyclopentadienyl titanium, biscyclopentadienyl titanium diazide, trimethylgallium, trimethylindium, alkylaluminum (e.g., trimethylaluminum, triethylaluminum, trimethylaminealane), dimethylzinc, tetramethyltin, trimethylantimony, diethylcadmium, and tungsten carbonyl, or any combination thereof.

[0048] In some embodiments, the precursor material includes, or consists of, or substantially consists of, or is selected from the group consisting of, at least one of elemental metals, metal halides, metal oxyhalides, and metal-organic complexes, or any combination thereof. For example, in some embodiments, the precursor material includes, or consists of, or substantially consists of, or is selected from the group consisting of, at least one of the following: elemental boron, copper, phosphorus, decaborane, gallium halide, indium halide, antimony halide, arsenic halide, gallium halide, aluminum iodide, titanium iodide, MoO2Cl2, MoOCl4, MoCl5, WCl5, WOCl4, WCl6, cyclopentadienylcycloheptatrienyl titanium (CpTiCht), cyclooctatetraenecyclopentadienyl titanium, biscyclopentadienyl titanium diazide, In(CH3)2(hfac), dibromomethylstivin, tungsten carbonyl, organometallic β-diketnate complex, organometallic alkoxide complex, organometallic carboxylate complex, organometallic aryl complex, or organometallic amide complex, or any combination thereof.

[0049]

[0060] In some embodiments, the precursor material includes, or consists of, any type of raw material that can be liquefied by heating or solubilization in a solvent, or is substantially composed of, or selected from the group consisting of, such as decaborane (B 10 H 14 ), Pentaborane (B5H9), Octadecaborane (B 18 H 22 ), boric acid (H3BO3), SbCl3, SbCl5, at least one of these, or any combination thereof, but not limited to these. In some embodiments, the precursor material is AsCl3, AsBr3, AsF3, AsF5, AsH3, As4O6, As2Se3, As2S2, As2S3, As2S5, As2Te3, B4H 11 B4H 10 , B3H6N3, BBr3, BCl3, BF3, BF3.O(C2H5)2, BF3.HOCH3, B2H6, F2, HF, GeBr4, GeCl4, Ge F4, GeH4, H2, HCl, H2Se, H2Te, H2S, WF6, SiH4, SiH2Cl2, SiHCl3, SiCl4, SiH3Cl, NH3, N H3, Ar, Br2, HBr, BrF5, CO2, CO, COCl2, COF2, Cl2, ClF3, CF4, C2F6, C3F8, C4F8, C5F8, C HF3, CH2F2, CH3F, CH4, SiH6, He, HCN, Kr, Ne, Ni(CO)4, HNO3, NO, N2, NO2, NF3, N2O, C8H 24 O4Si4, PH3, POCl3, PCl5, PF3, PFS, SbH3, SO2, SF6, SF4, Si(OC2H5)4, C4H 16 It includes or consists of at least one of Si4O4, Si(CH3)4, SiH(CH3)3, TiCl4, Xe, SiF4, WOF4, TaBr5, TaCl5, TaF5, Sb(C2H5)3, Sb(CH3)3, In(CH3)3, PBr5, PBr3, RuF5, or any combination thereof, or is substantially composed of these, or is selected from the group consisting of these.

[0050] In some embodiments, one or more solvents are organic solvents, inorganic solvents, or any combination thereof. In some embodiments, one or more solvents include arsenic, phosphorus, antimony, germanium, indium, tin, selenium, tellurium, fluorine, carbon, boron, aluminum, bromine, carbon, chlorine, nitrogen, silicon, tungsten, tantalum, ruthenium, selenium, nickel, sulfur, or any combination thereof. It would also be appreciated that other precursor materials may be available herein, without departing from the present disclosure.

[0051] In some embodiments, the method further includes removing at least a portion of the inhibitor compound from the metal surface of the substrate. In some embodiments, the removal includes heating the substrate under vacuum to a temperature sufficient to remove at least a portion of the inhibitor compound from the metal surface of the substrate.

[0052] Figure 2 is a flowchart of method 200 for selectively depositing inhibitor compounds according to several embodiments. As shown in Figure 2, method 200 for selectively depositing inhibitor compounds onto a substrate comprises one or more of the following steps: A step of obtaining a substrate having at least one metal surface and at least one non-metal surface. - A step of exposing a substrate to an inhibitor compound containing an alkyne compound functionalized with at least one alkoxy group, and A step of depositing an inhibitor compound onto at least one metal surface of a substrate, Includes. [Examples]

[0053] The inhibitor compounds disclosed herein were exposed to substrates having metallic and non-metallic surfaces. Subsequently, the substrates were exposed to HfO2 vapor for 1 second, 5 seconds, and 30 seconds. A control substrate was not exposed to the inhibitor compounds but was exposed to HfO2 vapor. A summary of the HfO2 film thickness (Å) obtained on various substrates is shown in the table below. TIFF2026534491000008.tif79170

[0054]

[0065] Exposure of the substrate to the inhibitor compound resulted in a substantial reduction in the thickness of the HfO2 film on the metal surface, or prevented deposition on the metal surface.

[0055] manner Various embodiments are described below. It should be understood that one or more of the features mentioned in one or more of the following embodiments can be combined with one or more of the other embodiments. [Aspect 1] The substrate is exposed to an inhibitor compound containing an alkyne compound functionalized with at least one alkoxy group to form a first layer on the metal surface of the substrate, and The substrate is exposed to a precursor vapor to form a second layer on the non-metallic surface of the substrate. Methods that include... [Aspect 2] The inhibitor compound is a compound with the following formula: TIFF2026534491000009.tif29170[In the formula, R 1 C1~C 10 Alkyl, C1-C 10 Alkenyl, or C1-C 10 It includes at least one of the alkynnyls, or any combination thereof. R 2 is hydrogen, C1~C 10 Alkyl, C1-C 10 Alkenyl, C1~C 10 Alkinyl, C1~C 10 [Containing at least one alkoxy, or any combination thereof] The method according to embodiment 1. [Aspect 3] The inhibitor compound is a compound with the following formula: TIFF2026534491000010.tif29170[In the formula, Each R 1 These are independent of C1~C 10 Alkyl, C1-C 10 Alkenyl, or C1-C 10[Containing at least one of the alkinyl compounds, or any combination thereof] The method according to embodiment 1 or 2. [Aspect 4] The inhibitor compound is at least one of the following compounds: The method according to any one of embodiments 1 to 3, including TIFF2026534491000011.tif114170. [Aspect 5] The method according to any one of embodiments 1 to 4, wherein the metal surface of the substrate contains at least one of copper, tungsten, cobalt, and ruthenium, or any combination thereof. [Aspect 6] The nonmetallic surface of the substrate contains a dielectric material. The method according to any one of embodiments 1 to 5. [Aspect 7] The method according to any one of embodiments 1 to 6, wherein the nonmetallic surface comprises at least one of silicon dioxide (SiO2), silicon oxycarbide, aluminum oxide, silicon nitride, tantalum nitride, titanium nitride, aluminum nitride, or any combination thereof. [Aspect 8] The method according to any one of embodiments 1 to 7, wherein exposing a substrate to an inhibitor compound includes pulsing the inhibitor compound into a chamber containing the substrate. [Aspect 9] The method according to any one of embodiments 1 to 8, wherein the exposure proceeds at a temperature of 100°C to 400°C. [Aspect 10] The method according to any one of embodiments 1 to 9, wherein the exposure proceeds at a pressure of 0.1 Torr to 50 Torr. [Aspect 11] The method according to any one of embodiments 1 to 10, wherein, by exposing the substrate to an inhibitor compound, a first layer is not formed on the nonmetallic surface of the substrate. [Aspect 12] The method according to any one of embodiments 1 to 11, wherein a second layer is not formed on the metal surface of the substrate by exposing the substrate to a precursor vapor. [Aspect 13] The method according to any one of embodiments 1 to 11, further comprising removing at least a portion of the inhibitor compound from the metal surface of the substrate. [Aspect 14] The method according to any one of embodiments 1 to 12, further comprising heating the substrate under vacuum to a temperature sufficient to remove at least a portion of the inhibitor compound from the metal surface of the substrate. [Aspect 15] A composition containing an inhibitor compound, The inhibitor compound comprises an alkyne compound functionalized with at least one alkoxy group, The inhibitor compound is present in the composition with a purity of at least 95%. A composition in which an inhibitor compound is configured to selectively deposit a precursor vapor onto a nonmetallic surface of a substrate. [Aspect 16] The inhibitor compound is a compound with the following formula: TIFF2026534491000012.tif29170[In the formula, R 1 C1~C 10 Alkyl, C1-C 10 Alkenyl, or C1-C 10 It includes at least one of the alkynnyls, or any combination thereof. R 2 is hydrogen, C1~C 10 Alkyl, C1-C 10 Alkenyl, C1~C 10 Alkinyl, C1~C 10 [Containing at least one alkoxy, or any combination thereof] The composition according to embodiment 15. [Aspect 17] The inhibitor compound is a compound with the following formula: TIFF2026534491000013.tif29170[In the formula, Each R 1 These are independent of C1~C 10 Alkyl, C1-C 10 Alkenyl, or C1-C 10[Containing at least one of the alkinyl compounds, or any combination thereof] The composition according to embodiment 15 or 16. [Aspect 18] The inhibitor compound is at least one of the following compounds: A composition according to any one of embodiments 15 to 17, including TIFF2026534491000014.tif114170. [Aspect 19] The composition according to any one of embodiments 15 to 18, wherein the inhibitor compound is present in the composition with a purity of 95% to 99%. [Aspect 20] A container comprising the composition according to any one of embodiments 15 to 19. [Aspect 21] A method for selectively depositing inhibitor compounds, A step of obtaining a substrate having at least one metal surface and at least one non-metal surface, Exposure of the substrate to an inhibitor compound containing an alkyne compound functionalized with at least one alkoxy group, and Depositing the inhibitor compound onto at least one metal surface of the substrate, Methods that include...

[0056] It should be understood that details, particularly with respect to the structural materials used, as well as the shape, size, and arrangement of components, are subject to change without departing from the scope of this disclosure. The embodiments described herein are illustrative, and the true scope and spirit of this disclosure are shown by the following claims.

Claims

1. The substrate is exposed to an inhibitor compound containing an alkyne compound functionalized with at least one alkoxy group to form a first layer on the metal surface of the substrate, and The substrate is exposed to a precursor vapor to form a second layer on the non-metallic surface of the substrate. Methods that include...

2. The inhibitor compound is a compound with the following formula: [In the formula, R １ C １ ~C １０ Alkyl, C １ ~C １０ Alkenil, or C １ -C １０ It includes at least one of the alkynnyl compounds, or any combination thereof. R ２ is hydrogen, C １ to C １０ alkyl, C １ to C １０ alkenyl, C １ to C １０ alkynyl, C １ to C １０ at least one of alkoxy, or any combination thereof] The method according to claim 1.

3. The inhibitor compound is a compound with the following formula: [In the formula, Each R １ C is independent １ ~C １０ Alkyl, C １ ~C １０ Alkenil, or C １ ~C １０ [Containing at least one of the alkinyl compounds, or any combination thereof] The method according to claim 1.

4. The inhibitor compound is at least one of the following compounds: The method according to claim 1, including the method described in claim 1.

5. The method according to claim 1, wherein the metal surface of the substrate includes at least one of copper, tungsten, cobalt, and ruthenium, or any combination thereof.

6. The nonmetallic surface of the substrate contains a dielectric material. The method according to claim 1.

7. Nonmetallic surfaces are silicon dioxide (SiO ２ The method according to claim 1, comprising at least one of silicon oxycarbide, aluminum oxide, silicon nitride, tantalum nitride, titanium nitride, and aluminum nitride, or any combination thereof.

8. The method according to claim 1, wherein exposure of the substrate to the inhibitor compound includes pulsing the inhibitor compound into a chamber containing the substrate.

9. The method according to claim 1, wherein the exposure proceeds at a temperature of 100°C to 400°C.

10. The method according to claim 1, wherein the exposure proceeds at a pressure of 0.1 Torr to 50 Torr.

11. The method according to claim 1, wherein, by exposing the substrate to an inhibitor compound, a first layer is not formed on the nonmetallic surface of the substrate.

12. The method according to claim 1, wherein a second layer is not formed on the metal surface of the substrate by exposing the substrate to a precursor vapor.

13. The method according to claim 1, further comprising removing at least a portion of the inhibitor compound from the metal surface of the substrate.

14. The method according to claim 1, further comprising heating the substrate under vacuum to a temperature sufficient to remove at least a portion of the inhibitor compound from the metal surface of the substrate.

15. A composition containing an inhibitor compound, The inhibitor compound comprises an alkyne compound functionalized with at least one alkoxy group, The inhibitor compound is present in the composition with a purity of at least 95%. A composition in which an inhibitor compound is configured to selectively deposit a precursor vapor onto a nonmetallic surface of a substrate.

16. The inhibitor compound is a compound with the following formula: [In the formula, R １ C １ ~C １０ Alkyl, C １ ~C １０ Alkenil, or C １ ~C １０ It includes at least one of the alkynnyl compounds, or any combination thereof. R ２ is hydrogen, C １ ~C １０ Alkyl, C １ ~C １０ Alkenil, C １ ~C １０ Alkinyl, C １ ~C １０ [Containing at least one alkoxy, or any combination thereof] The composition according to claim 15.

17. The inhibitor compound is a compound with the following formula: [In the formula, Each R １ C is independent １ ~C １０ Alkyl, C １ ~C １０ Alkenil, or C １ ~C １０ [Containing at least one of the alkinyl compounds, or any combination thereof] The composition according to claim 15.

18. The inhibitor compound is at least one of the following compounds: The composition according to claim 15, comprising:

19. The composition according to claim 15, wherein the inhibitor compound is present in the composition with a purity of 95% to 99%.

20. A method for selectively depositing inhibitor compounds, To obtain a substrate having at least one metal surface and at least one non-metal surface, Exposure of the substrate to an inhibitor compound containing an alkyne compound functionalized with at least one alkoxy group, and Depositing the inhibitor compound onto at least one metal surface of the substrate, Methods that include...

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