Light-emitting chip, display board, and display device

Abstract

Disclosed are a light-emitting chip, a display substrate, and a display device belonging to the field of display technology. The light-emitting chip includes a light-emitting unit and a color conversion unit disposed on the light-emitting side of the light-emitting unit. A first groove opening on a second surface can be provided in a second semiconductor layer of the light-emitting unit, and a filler portion can be located within the first groove. In this way, after some of the light emitted from the light-emitting unit propagates laterally through the second semiconductor layer, the filler portion located in the first groove can shield the light that has propagated to the region where an adjacent light-emitting unit is located. As a result, the probability that some of the light emitted from the light-emitting unit propagates laterally through the second semiconductor layer and reaches the region where an adjacent light-emitting unit is located can be effectively reduced, thereby ensuring that optical crosstalk is less likely to occur within the light-emitting chip, and consequently, the display effect of a display substrate on which such a light-emitting chip is integrated can be improved.

Description

Technical Field

[0001] This application claims the priority of the PCT patent application filed on September 28, 2023, with application number PCT / CN2023 / 123002 and titled "Light-emitting Chip, Display Substrate, and Display Apparatus", the entire contents of which are incorporated herein by reference in their entirety.

[0002] The present application relates to the field of display technology, and in particular to a light-emitting chip, a display substrate, and a display apparatus.

Background Art

[0003] With the development of technology and the increasing demand for displays, Light-Emitting Diodes (abbreviated as LEDs) have become the development trend of future display devices. Compared with liquid crystal displays and organic electroluminescence, they have unparalleled advantages such as ultra-high contrast, ultra-high color gamut, high luminous efficiency, high brightness, and low power consumption.

[0004] Here, display devices combining Light-Emitting Diodes (abbreviated as LEDs) and Quantum-Dots (QDs) have attracted great attention, and can be applied to mobile phones, displays, TVs, and outdoor displays.

Summary of the Invention

Means for Solving the Problems

[0005] The embodiments of the present application provide a light-emitting chip, a display substrate, and a display apparatus that can solve the problem of poor display performance of display substrates. The technical solutions are as follows.

[0006] In one aspect, the light-emitting chip includes a light-emitting unit, and a color conversion unit disposed on the light exit side of the light-emitting unit.

[0007] The light-emitting unit includes a plurality of light-emitting sections, each of which includes a first electrode, a first semiconductor layer, and a light-emitting layer arranged in a stack along a first direction.

[0008] The light-emitting unit further includes a second semiconductor layer and a common electrode layer, the second semiconductor layer being arranged on the light-emitting side of the plurality of light-emitting units, the second semiconductor layer including a connecting portion and an auxiliary portion, the connecting portion being connected to the light-emitting unit, at least a part of the auxiliary portion being located between adjacent connecting portions, the connecting portion and the auxiliary portion being an integral structure, and the common electrode layer being connected to the auxiliary portion.

[0009] Here, the surface of the second semiconductor layer facing the color conversion unit is the first surface, the surface of the second semiconductor layer away from the color conversion unit is the second surface, the second semiconductor layer includes a first groove opening on the second surface, and the first groove is located at least between the orthographic projections of two adjacent light-emitting layers among the plurality of light-emitting units on the extending surface of the second semiconductor layer.

[0010] The light-emitting chip further includes a filling portion located within the first groove, the filling portion being made of an opaque material.

[0011] Regarding light-emitting chips.

[0012] As one option, the filling portion is part of the common electrode layer.

[0013] As one option, the first groove is located within the orthographic projection of the extension surface of the second semiconductor layer on the common electrode layer.

[0014] As one option, the common electrode layer has a groove on the side away from the color conversion unit, and the orthographic projection of the groove on the extending surface of the second semiconductor layer overlaps with the first groove.

[0015] One option is that the portion of the common electrode layer located within the first groove and the portion located outside the first groove are a continuous, integrated structure.

[0016] As one option, the ratio of the depth of the first groove to the thickness of the second semiconductor layer is within the range of 10% to 65%.

[0017] As one option, the ratio of the distance between the bottom of the first groove and the first surface in the first direction to the thickness of the second semiconductor layer is in the range of 35% to 90%.

[0018] As one option, the second semiconductor layer includes a stacked arrangement of a first sublayer and a second sublayer, the first sublayer being adjacent to the light-emitting portion by the second sublayer, the first sublayer being a first carrier transport layer, and the second sublayer being a buffer layer.

[0019] Here, the first groove includes a first blind groove provided on the side of the first sublayer away from the second sublayer,

[0020] Alternatively, the first groove includes a first through groove penetrating the first sublayer,

[0021] Alternatively, the first groove includes a first through groove penetrating the first sublayer and a second blind groove provided on the side of the second sublayer facing the first sublayer, wherein the first through groove communicates with the second blind groove.

[0022] Alternatively, the first groove includes a first through groove penetrating the first sublayer and a second through groove penetrating the second sublayer, wherein the first through groove communicates with the second through groove.

[0023] As one option, the minimum distance between the outer edge of the first groove and the outer edge of the orthographic projection of the light-emitting layer in the adjacent light-emitting portion on the extending surface of the second semiconductor layer is 5 micrometers or more.

[0024] As one of the options, the plurality of light-emitting units includes a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit, the first light-emitting unit and the second light-emitting unit are arranged in a line in a second direction, the first light-emitting unit and the third light-emitting unit are arranged in a line in a third direction, the second direction and the third direction intersect with each other, and both intersect with the first direction,

[0025] The first groove includes a first groove portion and a second groove portion, the first groove portion is located between an orthographic projection of the second semiconductor layer of the first light-emitting unit on the extending surface thereof and an orthographic projection of the second semiconductor layer of the second light-emitting unit on the extending surface thereof, and the second groove portion is located between an orthographic projection of the second semiconductor layer of the first light-emitting unit on the extending surface thereof and an orthographic projection of the second semiconductor layer of the third light-emitting unit on the extending surface thereof.

[0026] As one of the options, the first groove portion and the second groove portion are both in a strip shape, the first groove portion extends along the third direction, and the second groove portion extends along the second direction.

[0027] As one of the options, the length of the first groove portion in the third direction is equal to or greater than the width of the first light-emitting unit in the third direction, and is equal to or greater than the width of the second light-emitting unit in the third direction,

[0028] and / or, the length of the second groove portion in the second direction is equal to or greater than the width of the first light-emitting unit in the second direction, and is equal to or greater than the width of the third light-emitting unit in the second direction.

[0029] As one of the options, the width of the first groove portion in the second direction and the width of the second groove portion in the third direction are both in the range of 2 micrometers to 10 micrometers.

[0030] As one of the options, the first groove portion and the second groove portion are in communication with each other.

[0031] As one option, the orthographic projection shape of the first groove and the second groove, which are in communication with each other, on the extending surface of the second semiconductor layer includes a T-shape.

[0032] As one option, the light-emitting unit further includes a second electrode, the second electrode located on the side of the common electrode layer away from the color conversion unit and electrically connected to the common electrode layer.

[0033] Here, the second electrode and the first electrode in the third light-emitting part are arranged in a line in the second direction, and the second electrode and the first electrode in the second light-emitting part are arranged in a line in the third direction.

[0034] As one option, the light-emitting chip further includes a dam, the dam is located on the side of the color conversion unit facing the light-emitting unit, and the dam is distributed so as to surround the outer circumference of the light-emitting unit.

[0035] Here, the dam is made of an opaque material.

[0036] As one option, the color conversion unit includes a defining dam layer, the defining dam layer has a plurality of aperture regions defined, and in the first direction, one of the light-emitting units corresponds to one of the aperture regions.

[0037] The color conversion unit further includes an optical function section provided within the opening region of the defining dam layer, and a layer for sealing the optical function section and the defining dam layer.

[0038] Here, each of the light-emitting units is used to emit a first light, and at least some of the optical functional units are used to convert the color of the incident first light.

[0039] As one option, the plurality of light-emitting units include a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit, wherein the first light-emitting unit and the second light-emitting unit are arranged in a line in a second direction, and the first light-emitting unit and the third light-emitting unit are arranged in a line in a third direction, and the second direction and the third direction intersect, and both intersect with the first direction.

[0040] The light-emitting area of ​​the second light-emitting part is larger than the light-emitting area of ​​the first light-emitting part, and the light-emitting area of ​​the second light-emitting part is larger than the light-emitting area of ​​the third light-emitting part.

[0041] The projected area of ​​the second semiconductor layer on the extending surface of the optical functional part corresponding to the second light-emitting part is greater than the projected area of ​​the second semiconductor layer on the extending surface of the optical functional part corresponding to the first light-emitting part, and is greater than the projected area of ​​the second semiconductor layer on the extending surface of the optical functional part corresponding to the third light-emitting part.

[0042] As one option, the length of the light-emitting layer of the second light-emitting part in the third direction is greater than the length of the light-emitting layer of the first light-emitting part in the third direction.

[0043] The length of the optical functional portion corresponding to the second light-emitting portion in the third direction is greater than the length of the optical light energy portion corresponding to the third light-emitting portion in the third direction.

[0044] As one option, the first light is blue light, and the optical function unit corresponding to the second light-emitting unit is used to convert the blue light to green light.

[0045] The optical function unit corresponding to one of the first light-emitting unit and the second light-emitting unit is used to convert blue light to red light, and the optical function unit corresponding to the other of the first light-emitting unit and the second light-emitting unit is used to transmit the first light.

[0046] As one option, the color conversion unit further includes a first light-selective transmission layer, the first light-selective transmission layer is distributed on the side of the color conversion unit away from the light-emitting unit, and the first light-selective transmission layer is used to reflect the first light and transmit light of a different color from the first light.

[0047] Here, the plurality of optical functional units include at least one first target optical functional unit for converting the first color of light to another color, and the orthographic projection of the first light-selective transmission layer on the extending surface of the second semiconductor layer overlaps with the orthographic projection of the first target optical functional unit on the extending surface of the second semiconductor layer.

[0048] As one option, the first light-selective transmission layer is a continuously distributed film layer.

[0049] Here, the plurality of optical functional units include at least one second target optical functional unit for transmitting the first light, the first light selective transmission layer includes a hollow region, and the orthographic projection of the hollow region on the extending surface of the second semiconductor layer overlaps with the orthographic projection of the second target optical functional unit on the extending surface of the second semiconductor layer.

[0050] As one option, the first light-selective transmission layer includes a plurality of first dielectric layers and a plurality of second dielectric layers sequentially stacked along the first direction, wherein the refractive index of the first dielectric layer and the refractive index of the second dielectric layer are different.

[0051] As one option, the first light-selective transmission layer is located within the aperture region that defines the first target optical function.

[0052] As one option, the material for the first light-selective transmission layer includes a cholesteric liquid crystal.

[0053] As one option, the light-emitting chip further includes a second light-selective transmission layer distributed within the color conversion unit or within the light-emitting unit, the second light-selective transmission layer being used to transmit the first light and reflect light of a different color from the first light.

[0054] As one option, if the second light-selective transmission layer is distributed within the color conversion unit, the second light-selective transmission layer is located on the side facing the light-emitting unit of the defining dam and the plurality of optical functional parts.

[0055] When the second light-selective transmission layer is distributed within the light-emitting unit, the second light-selective transmission layer is located on the side of the second semiconductor layer facing the color conversion unit.

[0056] As one option, if the first light is blue light, at least one of the first target optical units includes a first optical function unit for converting blue light to red light and a second optical function unit for converting blue light to green light, and at least one of the second target optical units includes a third optical function unit for transmitting the first light.

[0057] As one option, the color conversion unit further includes a filter layer, the filter layer includes a plurality of filter sections, and the plurality of filter sections are arranged in a one-to-one correspondence with a plurality of optical function sections.

[0058] Here, the filter unit is used to filter out light of colors other than the corresponding color from the light emitted from the optical function unit.

[0059] In another respect, the light-emitting chip described in any of the above,

[0060] A drive circuit layer for driving the light-emitting chip to emit light, including, Regarding display boards.

[0061] In another respect, the above-mentioned display board and,

[0062] A control circuit for supplying electrical signals to the display board, including, Regarding display devices.

[0063] The beneficial effects of the technical invention provided by the embodiments of this application include at least the following:

[0064] The light-emitting chip includes a light-emitting unit and a color conversion unit positioned on the light-emitting side of the light-emitting unit. A first groove opening on a second surface can be provided in a second semiconductor layer of the light-emitting unit, and a filler portion can be located within the first groove. In this way, after some of the light emitted from the light-emitting unit propagates laterally through the second semiconductor layer, the filler portion located in the first groove can shield the light that has propagated to the region where an adjacent light-emitting unit is located. As a result, the probability that some of the light emitted from the light-emitting unit propagates laterally through the second semiconductor layer and reaches the region where an adjacent light-emitting unit is located can be effectively reduced, thereby ensuring that optical crosstalk is less likely to occur within the light-emitting chip, and consequently, the display effect of a display substrate on which such a light-emitting chip is integrated can be improved. [Brief explanation of the drawing]

[0065] To more clearly explain the technical concepts in the embodiments of this application, the drawings used in the description of the embodiments will be briefly described below. It will be clear that the drawings in the following description are only a few embodiments of this application, and that those skilled in the art can obtain other drawings based on these drawings without any creative work.

[0066] [Figure 1] This is a structural diagram of a mobile phone according to an embodiment of the present disclosure. [Figure 2] This is a structural diagram of a display substrate according to some embodiments of the present disclosure. [Figure 3] This is a structural diagram of a light-emitting chip according to some embodiments of the present disclosure. [Figure 4] Figure 3 shows a cross-sectional view of the light-emitting chip along the cross-sectional line QQ. [Figure 5] This is another structural diagram of a light-emitting chip according to some embodiments of the present disclosure. [Figure 6] This is yet another structural diagram of a light-emitting chip according to some embodiments of the present disclosure. [Figure 7] This is yet another structural diagram of a light-emitting chip according to some embodiments of the present disclosure. [Figure 8] These are structural diagrams of wafers according to some embodiments of the present disclosure. [Figure 9] This is a flowchart of a method for manufacturing an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 10] This is a step diagram of a method for manufacturing an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 11] This is a step diagram of a method for manufacturing an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 12] This is a step diagram of a method for manufacturing an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 13] This is a step diagram of a method for manufacturing an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 14] This is a step diagram of a method for manufacturing an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 15] This is a step diagram of a method for manufacturing an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 16] This is a step diagram of a method for manufacturing an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 17] This is a step diagram of a method for manufacturing an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 18] This is a step diagram of a method for manufacturing an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 19]This is a step diagram of a method for manufacturing an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 20] This is a step diagram of a method for manufacturing an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 21] This is a flowchart of a method for manufacturing an optical functional unit according to some embodiments of the present disclosure. [Figure 22] This is a step diagram of a method for manufacturing an optical functional unit according to some embodiments of the present disclosure. [Figure 23] This is a step diagram of a method for manufacturing an optical functional unit according to some embodiments of the present disclosure. [Figure 24] This is a step diagram of a method for manufacturing an optical functional unit according to some embodiments of the present disclosure. [Figure 25] This is a step diagram of a method for manufacturing an optical functional unit according to some embodiments of the present disclosure. [Figure 26] This is a step diagram of a method for manufacturing an optical functional unit according to some embodiments of the present disclosure. [Figure 27] This is a flowchart illustrating how to form a light-emitting chip by aligning and bonding an optical function unit and an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 28] This is a step diagram showing how to form a light-emitting chip by aligning and bonding an optical function unit and an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 29] This is a step diagram showing how to form a light-emitting chip by aligning and bonding an optical function unit and an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 30] This is a step diagram showing how to form a light-emitting chip by aligning and bonding an optical function unit and an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 31]This is a step diagram showing how to form a light-emitting chip by aligning and bonding an optical function unit and an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 32] This is a step diagram showing how to form a light-emitting chip by aligning and bonding an optical function unit and an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 33] This is a step diagram showing how to form a light-emitting chip by aligning and bonding an optical function unit and an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 34] This is a step diagram showing how to form a light-emitting chip by aligning and bonding an optical function unit and an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 35] This is a step diagram showing how to form a light-emitting chip by aligning and bonding an optical function unit and an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 36] This is a flowchart illustrating how to form another light-emitting chip by aligning and bonding an optical function unit and an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 37] This is a step diagram showing how to form another light-emitting chip by aligning and bonding an optical function unit and an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 38] This is a step diagram showing how to form another light-emitting chip by aligning and bonding an optical function unit and an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 39] This is a flowchart illustrating how to form another light-emitting chip by aligning and bonding an optical function unit and an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 40] This is a step diagram showing how to form another light-emitting chip by aligning and bonding an optical function unit and an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 41] This is a step diagram showing how to form another light-emitting chip by aligning and bonding an optical function unit and an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 42] This is a step diagram showing how to form another light-emitting chip by aligning and bonding an optical function unit and an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 43] This is a step diagram showing how to form another light-emitting chip by aligning and bonding an optical function unit and an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 44] This is a step diagram showing how to form another light-emitting chip by aligning and bonding an optical function unit and an initial chip wafer unit according to some embodiments of the present disclosure. [Figure 45] This is a plan view of a light-emitting chip according to some embodiments of the present disclosure. [Figure 46] Figure 45 shows a cross-sectional view of the light-emitting chip along the cross-sectional line HH. [Figure 47] This is an internal optical path diagram of a light-emitting chip according to some embodiments of the present disclosure. [Figure 48] This is another internal optical path diagram of a light-emitting chip according to some embodiments of the present disclosure. [Figure 49] This is yet another structural diagram of a light-emitting chip according to some embodiments of the present disclosure. [Figure 50] Figure 49 shows a cross-sectional view of the light-emitting chip along the cross-sectional line VV. [Figure 51] This is another structural diagram of a light-emitting chip according to some embodiments of the present disclosure. [Figure 52] This is yet another structural diagram of a light-emitting chip according to some embodiments of the present disclosure. [Figure 53] This is yet another structural diagram of a light-emitting chip according to some embodiments of the present disclosure. [Figure 54] This is yet another structural diagram of a light-emitting chip according to some embodiments of the present disclosure. [Figure 55] This is a cross-sectional structural diagram along the cross-sectional line DD in the structural diagram of the light-emitting chip shown in Figure 54. [Figure 56] Figure 54 shows the nanolayer in the structural diagram of the light-emitting chip, viewed from direction E. [Figure 57] These are optical path diagrams of the surface of nanolayers according to some embodiments of the present disclosure. [Figure 58] This figure shows the measurement results of reflectance according to some embodiments of the present disclosure. [Figure 59] This is yet another structural diagram of a light-emitting chip according to some embodiments of the present disclosure. [Figure 60] This is a diagram showing another measurement result of reflectance according to some embodiments of the present disclosure. [Figure 61] This is yet another structural diagram of a light-emitting chip according to some embodiments of the present disclosure. [Figure 62] This is yet another structural diagram of a light-emitting chip according to some embodiments of the present disclosure. [Figure 63] This is yet another structural diagram of a light-emitting chip according to some embodiments of the present disclosure. [Figure 64] This is yet another structural diagram of a light-emitting chip according to some embodiments of the present disclosure. [Figure 65] This is yet another structural diagram of a light-emitting chip according to some embodiments of the present disclosure. [Figure 66] This is a step diagram of a method for manufacturing an luminescent chip according to some embodiments of the present disclosure. [Figure 67] This is yet another structural diagram of a light-emitting chip according to some embodiments of the present disclosure. [Figure 68] This is an enlarged view of section I in the structural diagram of the light-emitting chip shown in Figure 67. [Figure 69] This is yet another structural diagram of a light-emitting chip according to some embodiments of the present disclosure. [Figure 70] This is yet another structural diagram of a light-emitting chip according to some embodiments of the present disclosure. [Figure 71] This is an enlarged view of the grating stripe of an emitting chip according to some embodiments of the present disclosure. [Figure 72] This is yet another structural diagram of a light-emitting chip according to some embodiments of the present disclosure. [Figure 73] This is yet another structural diagram of a light-emitting chip according to some embodiments of the present disclosure. [Figure 74] This is an optical path diagram of a second semiconductor layer according to some embodiments of the present disclosure. [Figure 75] This is yet another internal optical path diagram of a light-emitting chip according to some embodiments of the present disclosure. [Figure 76] This is yet another structural diagram of a light-emitting chip according to some embodiments of the present disclosure. [Figure 77] This is yet another structural diagram of a light-emitting chip according to some embodiments of the present disclosure. [Figure 78] This is a bottom view of a light-emitting chip according to another embodiment of this application. [Figure 79] Figure 78 is a plan view of the light-emitting unit shown. [Figure 80] Figures 78 and 79 show cross-sectional views of the light-emitting chip at position LL. [Figure 81] This is a partially enlarged view of the distribution of the second semiconductor layer and the common electrode layer according to the embodiment of this application. [Figure 82] This is a schematic diagram of the structure of the second semiconductor layer according to the embodiment of this application. [Figure 83] This is a schematic diagram of the structure of another second semiconductor layer according to an embodiment of this application. [Figure 84] This is a schematic diagram of the structure of yet another second semiconductor layer according to an embodiment of this application. [Figure 85] This is a schematic diagram of yet another second semiconductor layer structure according to an embodiment of the present application. [Figure 86] This is a bottom view of another light-emitting chip according to another embodiment of this application. [Figure 87] This is a bottom view of yet another light-emitting chip according to another embodiment of this application. [Figure 88] This is a cross-sectional view of a light-emitting chip according to an embodiment of this application. [Figure 89] This is a cross-sectional view of another light-emitting chip according to an embodiment of this application. [Figure 90] This is a cross-sectional view of yet another light-emitting chip according to an embodiment of this application. [Figure 91] This is a schematic diagram of the structure of the first light-selective transmission layer according to the embodiment of this application. [Figure 92] This is a cross-sectional view of yet another light-emitting chip according to an embodiment of this application. [Figure 93] This is a cross-sectional view of a light-emitting chip according to another embodiment of this application. [Figure 94] This is a cross-sectional view of a light-emitting chip according to another embodiment of this application. [Figure 95] This is a cross-sectional view of another light-emitting chip according to another embodiment of this application. [Figure 96] This is a cross-sectional view of yet another light-emitting chip according to another embodiment of this application. [Figure 97] This is a cross-sectional view of yet another light-emitting chip according to another embodiment of this application. [Figure 98] This is a schematic diagram of the structure of a light-emitting chip according to yet another embodiment of this application. [Figure 99] Figure 98 is a schematic diagram of the manufacturing process of an emissive chip according to an embodiment. [Modes for carrying out the invention]

[0067] To further clarify the purpose, technical proposal, and advantages of this application, embodiments of this application will be described in more detail below with reference to the drawings.

[0068] The following describes, with reference to the drawings, some of the technical concepts in the embodiments of this disclosure clearly and completely, and it is clear that the embodiments described are only a selection of the embodiments of this disclosure, not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this disclosure are within the scope of protection of this disclosure.

[0069] Unless otherwise required by the context, throughout the specification and claims, the term “comprise” and its other forms, such as the third-person singular “comprises” and the present participle “comprising,” shall be interpreted in an open and inclusive sense, i.e., “comprises, but not limited to.” In the description, terms such as “one embodiment,” “some embodiments,” “exemplary embodiments,” “example,” “specific example,” or “some examples” are intended to indicate that a particular feature, structure, material, or property relating to such embodiment or example is included in at least one embodiment or example of the Disclosure. The general notation of the above terms does not necessarily refer to the same embodiment or example. Furthermore, any particular feature, structure, material, or property described may be included in any one or more embodiments or examples in any appropriate manner.

[0070] Hereafter, the terms “first” and “second” are used solely for the purpose of describing the objectives and should not be understood as suggesting or implying relative importance or implicitly indicating the number of technical features being referred to. Therefore, features limited by “first” and “second” may explicitly or implicitly include one or more such features. In the description of the embodiments of this disclosure, unless otherwise specified, “multiple” means two or more.

[0071] In describing some embodiments, the terms “coupling,” “connection,” and their derivatives may be used. The term “connection” should be understood broadly; for example, “connection” may be a fixed connection, a removable connection or integral formation, a direct connection, or an indirect connection via an intermediate medium. The term “coupling” refers, for example, to two or more parts having direct physical or electrical contact. The term “coupling” or “communicatively coupled” may also refer to two or more parts cooperating or interacting with each other even though they are not in direct contact. The embodiments disclosed herein are not necessarily limited to those described herein.

[0072] The expression "at least one of A, B, and C" has the same meaning as the expression "at least one of A, B, or C," and both include the following combinations of A, B, and C, namely A only, B only, C only, a combination of A and B, a combination of A and C, a combination of B and C, and a combination of A, B, and C.

[0073] The expression "A and / or B" includes the following three combinations: A only, B only, and the combination of A and B.

[0074] As used herein, “about,” “approximately,” or “approximately” includes the stated value and the mean value within a given range of deviation of a particular value, where the range of deviation is determined by a person skilled in the art, taking into account the measurement under consideration and the errors (i.e., limitations of the measuring system) associated with the measurement of a particular quantity.

[0075] As used herein, “parallel,” “perpendicular,” and “equal” include the described conditions and conditions that approximate the described conditions, the range of such approximate conditions being within an acceptable deviation range, where the acceptable deviation range is determined by a person skilled in the art considering the measurement under consideration and the error associated with the measurement of a particular quantity (i.e., the limits of the measuring system). For example, “parallel” includes absolute parallelism and approximate parallelism, where the acceptable deviation range for approximate parallelism may be, for example, a deviation of 5° or less; “perpendicular” includes absolute perpendicularism and approximate perpendicularism, where the acceptable deviation range for approximate perpendicularism may be, for example, a deviation of 5° or less; “equal” includes cases of absolute equality and cases of approximate equality, where the acceptable deviation range for cases of approximate equality may be, for example, a range in which the difference between the two equals is 5% or less of the value of either one of them.

[0076] When a layer or element is located on another layer or substrate, it should be understood that the layer or element may be directly on the other layer or substrate, or an intermediate layer may exist between the layer or element and the other layer or substrate.

[0077] This specification describes exemplary embodiments with reference to cross-sectional and / or plan views, which are idealized, illustrative drawings. In the drawings, the layer thickness and area of ​​the regions have been enlarged for clarity. Therefore, variations in shape from the drawings, for example due to manufacturing techniques and / or tolerances, can be assumed. Accordingly, the exemplary embodiments should not be construed as being limited to the shapes of the regions shown herein, and include, for example, deviations in shape due to manufacturing. For example, the illustrated rectangular etching regions generally have a curvature characteristic. Therefore, the regions shown in the drawings are essentially schematic, and their shapes are not intended to represent the actual shapes of the regions of the device, nor are they intended to limit the scope of the exemplary embodiments.

[0078] As shown in Figure 1, some embodiments of the present disclosure provide a display device.

[0079] For example, the display device may be an LED (Light-Emitting Diode, abbreviated as LED) display device, a Mini LED (Mini Light-Emitting Diode, abbreviated as Mini LED) display device, and a Micro LED (Micro Light-Emitting Diode, abbreviated as Micro LED) display device.

[0080] The displays according to the embodiments of this disclosure may be any devices that display not only dynamic objects (e.g., video) or static objects (e.g., still images), but also characters or images. More specifically, the embodiments are assumed to be implemented in or associated with various electronic devices, which include, but are not limited to, mobile phones, wireless equipment, personal digital assistants (PDAs), handheld computers or portable computers, GPS receivers / navigators, cameras, MP4 video players, video cameras, game consoles, watches, clocks, calculators, television monitors, flat panel displays, computer monitors, automotive displays (e.g., odometer displays), navigation systems, cockpit controllers and / or displays, camera view displays (e.g., displays for rearview cameras in vehicles), electrophotography, electronic signs or display boards, projectors, architectural structures, packaging and aesthetic structures (e.g., displays for images of a single piece of jewelry).

[0081] As shown in Figure 1, in the embodiments of this disclosure, the display device is described exemplarily as a mobile phone 1000.

[0082] For example, the mobile phone 1000 includes a display board 200, a frame, a control circuit, and other electronic components, the display board being located within the frame, and the control circuit being used to supply electrical signals to the display board.

[0083] The display board 200 may be a display board 200 that combines mini light-emitting diodes (Mini LEDs) and quantum dots (QDs), or a display board 200 that combines micro light-emitting diodes (Micro LEDs) and quantum dots (QDs). The following explanation will use a display board 200 that combines micro light-emitting diodes (Micro LEDs) and quantum dots (QDs) as an example.

[0084] In some examples, as shown in Figure 2, the display board 200 includes a plurality of light-emitting chips 100 and a drive circuit layer for driving the light-emitting chips 100 to emit light.

[0085] In some examples, as shown in Figure 3, one light-emitting chip 100 is one pixel region P, and one pixel region P includes multiple sub-pixel regions S1. The multiple sub-pixel regions S1 may include sub-pixel regions S1 with different light-emitting colors.

[0086] For example, the subpixel regions are divided into a first subpixel region S11, a second subpixel region S12, and a third subpixel region S13. The first subpixel region S11, the second subpixel region S12, and the third subpixel region S13 each emit light of the three primary colors. For example, the first subpixel region S11 can emit red light, the second subpixel region S12 can emit green light, and the third subpixel region S13 can emit blue light.

[0087] In some embodiments, as shown in Figure 4, the light-emitting chip 100 includes a light-emitting unit 10, a color conversion unit 20 located on the light-emitting side G of the light-emitting unit 10, an adhesive layer 41 for connecting the light-emitting unit 10 and the color conversion unit 20, and a first substrate 30 located on the side of the color conversion unit 20 away from the light-emitting unit 10.

[0088] In some examples, as shown in Figure 4, the light-emitting unit 10 includes multiple light-emitting parts 11, with each light-emitting part 11 located in a single sub-pixel region.

[0089] For example, the light-emitting unit 11 may be a blue light-emitting diode chip unit.

[0090] In some examples, as shown in Figure 4, each light-emitting unit 11 includes a first electrode 12, a current diffusion layer 72, a first semiconductor layer 13, and a light-emitting layer 14 stacked along a first direction X. The light-emitting unit 10 further includes a second semiconductor layer 15 and a common electrode layer 16, the second semiconductor layer 15 may be located on the light-emitting side of the plurality of light-emitting units 11, and the second semiconductor layer 15 may be electrically connected to the common electrode layer 16. The light-emitting unit 10 further includes a second electrode 18, the second electrode 18 may be located on the side away from the color conversion unit 20, and may be electrically connected to the common electrode layer 16.

[0091] In the embodiments of this disclosure, the light-emitting section 11 may or may not have a current diffusion layer 72, and the embodiments of this disclosure are not limited to this.

[0092] In some examples, the first electrode 12 electrically connected to the first semiconductor layer 13 may be the anode of the light-emitting portion 11. The material of the first electrode 12 may be at least one of chromium, platinum, gold, tin, and silver. However, it is not limited to these materials in some embodiments of the present disclosure.

[0093] In some examples, the second electrode 18 electrically connected to the second semiconductor layer 15 may be the cathode of the light-emitting portion 11. The material of both the second electrode 18 and the common electrode layer 16 may be at least one of chromium, platinum, gold, tin, and silver. However, some embodiments of this disclosure are not limited to these materials.

[0094] In some examples, the light-emitting layer 14 may be a multiple quantum well (MQW). The first semiconductor layer 13 may be a second carrier transport layer, and the second semiconductor layer 15 may include the first carrier transport layer. Here, one of the first and second carriers is a hole, and the other is an electron. For example, when the first carrier is a hole and the second carrier is an electron, the first semiconductor layer 13 may be p-type gallium nitride (P-GaN layer), and the second semiconductor layer 15 may include n-type gallium nitride (N-GaN layer). The material of the current diffusion layer 72 includes indium tin oxide.

[0095] For example, by applying different voltages to the first electrode 12 and the second electrode 18, an electric field can be formed between them. This creates a PN junction with a barrier between the first semiconductor layer 13 and the second semiconductor layer 15. The carriers in the first semiconductor layer 13 and the carriers in the second semiconductor layer 15 are then injected into the light-emitting layer 14 and recombine. In this case, the excess energy is released in the form of light, directly converting electrical energy into light energy so that the light-emitting part 11 emits light.

[0096] In some examples, the adhesive layer 41 may be a bonding adhesive layer. Exemplarily, the adhesive layer 41 may be benzocyclobutene (BCB). In this case, the refractive index of the adhesive layer 41 is about 1.56. However, some embodiments of this disclosure are not limited thereto.

[0097] In some examples, as shown in Figure 4, the color conversion unit 20 may include a defining dam layer 21. Here, the defining dam layer 21 defines a plurality of aperture regions K, and in a first direction X, one of the light-emitting units corresponds to one of the aperture regions. The color conversion unit 20 may further include optical functional units 22 provided within the aperture regions K of the defining dam layer 21. Here, the first direction X is the direction in which the light-emitting unit 10 and the color conversion unit 20 are stacked. Each light-emitting unit 11 in the light-emitting unit 10 can be used to emit a first light, and at least some of the optical functional units 22 in the color conversion unit 20 are used to convert the color of the incident first light.

[0098] For example, the material of the optical functional section 22 includes quantum dots (QDs) that can emit light of a predetermined color by further application of an electric field or optical pressure. For instance, quantum dots can absorb short-wave blue light and excite long-wave red and green light. This property allows the quantum dots to change the color of the light emitted from the light source.

[0099] The color conversion unit 20 further includes a filter layer 24, the filter layer 24 including a plurality of filter sections 28. The plurality of filter sections 28 include a first filter section 241 (not shown, see Figure 23), a second filter section 242, and a third filter section 243. For example, the first filter section 241 is a red filter section, the second filter section 242 is a green filter section, and the third filter section 243 is a blue filter section. Each filter section in the filter layer 24 is used to achieve full-color display by filtering out light of other colors different from the corresponding color light from the light emitted from the optical function section 22, thereby transmitting light of the three primary colors used for color display (for example, the first filter section 241 can transmit only red light, the second filter section 242 can transmit only blue light, and the third filter section 243 can transmit only green light). For example, the light-shielding layer 23 is provided between different filter sections (including the first filter section 241, the second filter section 242, and the third filter section 243), isolating the filter sections, preventing color mixing between different filter sections, and avoiding any impact on the display effect.

[0100] In another feasible embodiment, both the first filter section 241 and the second filter section 242 may be yellow filters that can filter blue light, but can transmit red and green light.

[0101] In some examples, the manufacturing method for the light-emitting chip 100 includes independently manufacturing the light-emitting unit 10 and the color conversion unit 20, and then bonding the light-emitting unit 10 and the color conversion unit 20 together with an adhesive layer 41 to form the light-emitting chip 100. This improves the transfer efficiency of the Micro-LED, reduces the thickness of the chip, and improves manufacturing accuracy and product yield. Here, the bonding action of the adhesive layer 41 may be adhesive bonding or metal bonding. See the following description for details, and the explanation is omitted here.

[0102] In some embodiments, as shown in Figures 5 to 7, the adhesive layer 41 is one of the indium zinc oxide bonding layer 131, the metal bonding layer 132, and the adhesive layer 133.

[0103] In some examples, as shown in Figure 5, the adhesive layer 41 is an indium zinc oxide bonding layer 131, which includes a first indium zinc oxide layer 131a and a second indium zinc oxide layer 131b stacked along a first direction X, and the first indium zinc oxide layer 131a and the second indium zinc oxide layer 131b are connected by molecular bonding. The first indium zinc oxide layer 131a is stacked and connected to the light-emitting unit 10, and the second indium zinc oxide layer 131b is stacked and connected to the color conversion unit 20. The light-emitting chip 100 is formed by bonding the light-emitting unit 10 and the color conversion unit 20 through molecular bonding between the first indium zinc oxide layer 131a and the second indium zinc oxide layer 131b.

[0104] In some examples, as shown in Figure 6, the adhesive layer 41 is an adhesive layer 133. Exemplarily, the material of the adhesive layer 133 is an epoxy resin-based organic adhesive material. The light-emitting chip 100 is formed by bonding the light-emitting unit 10 and the color conversion unit 20 through the adhesive action of the adhesive layer 133. For specific manufacturing methods, please refer to the description below; a detailed explanation is omitted here.

[0105] In some examples, as shown in Figure 7, the adhesive layer 41 is a metal bonding layer 132, which includes a first sub-metal layer 132a, a second sub-metal layer 132b, and a third sub-metal layer 132c stacked along a first direction X, the second sub-metal layer 132b being configured as a eutectic alloy layer connecting the first sub-metal layer 132a and the third sub-metal layer 132c.

[0106] The first sub-metal layer 132a is laminated and connected to the light-emitting unit 10, and the third sub-metal layer 132c is laminated and connected to the color conversion unit 20. The eutectic alloy layer (second sub-metal layer 132b) connects the first sub-metal layer 132a and the third sub-metal layer 132c, thereby achieving bonding between the light-emitting unit 10 and the color conversion unit 20 and forming the light-emitting chip 100.

[0107] In some examples, the method for manufacturing the light-emitting chip 100 includes manufacturing an initial light-emitting unit 120 and a color conversion unit 20, then forming an adhesive layer 41, and bonding the initial light-emitting unit 120 and the color conversion unit 20 to obtain a light-emitting unit 10, thereby forming the light-emitting chip 100. To explain this technical invention more clearly, the method for manufacturing the light-emitting chip 100 will be described below with reference to three embodiments.

[0108] To clearly illustrate the manufacturing method of the light-emitting chip 100, the following explanation uses the formation of a single light-emitting chip 100 as an example. In this manufacturing method of the light-emitting chip 100, first, a wafer 300 containing multiple light-emitting chips 100 arranged in an array is formed, and then a single light-emitting chip 100 is formed by dicing the wafer 300. The structure of the wafer 300 is as shown in Figure 8.

[0109] The following describes a first embodiment of the method for manufacturing the light-emitting chip 100, and the light-emitting chip 100 shown in Figure 5 is formed according to this embodiment. Note that the configuration of the light-emitting chip 100 can be understood by referring to the contents shown in Figure 5 and the step diagram during the manufacturing steps of the light-emitting chip 100.

[0110] Example 1

[0111] Specifically, as shown in Figure 9, the steps for manufacturing the initial light-emitting unit 120 include S101 to S108.

[0112] In step S101, as shown in Figure 10, an initial gallium nitride buffer layer 1550, an initial n-type gallium nitride layer 1560, an initial quantum well layer 1210, and an initial p-type gallium nitride layer 1220 are sequentially formed on one side of the second substrate 91.

[0113] For example, the second substrate 91 may be either a sapphire substrate or a silicon-based substrate.

[0114] For example, the initial quantum well layer 1210 may be a blue quantum well layer, and the light-emitting part 11 (not shown, see Figure 5) formed by the blue quantum well layer emits blue light.

[0115] In S102, as shown in Figures 11 and 12, the initial p-type gallium nitride layer 1220 and the initial quantum well layer 1210 are patterned, and the initial n-type gallium nitride layer 1560 and the initial gallium nitride buffer layer 1550 are patterned to obtain the first semiconductor layer 13, the light-emitting layer 14, the n-type gallium nitride layer 156, and the gallium nitride buffer layer 155.

[0116] Exemplary, the initial quantum well layer 1210 and the initial p-type gallium nitride layer 1220 are patterned by a photolithography process, and the initial quantum well layer 1210 and the initial p-type gallium nitride layer 1220 are removed in the region between adjacent light-emitting sections 11 and in the negative electrode region S17.

[0117] For example, as shown in Figures 11 and 12, the initial light-emitting unit 120 includes three sub-pixel regions S1 and one negative electrode region S17, where the three sub-pixel regions S1 are the first sub-pixel region S11, the second sub-pixel region S12, and the third sub-pixel region S13, respectively. The initial quantum well layer 1210 and the initial P-type gallium nitride layer 1220 were patterned by a photolithography process, and the initial quantum well layer 1210 and the initial P-type gallium nitride layer 1220 were removed in areas other than the three sub-pixel regions S1 and the negative electrode region S17. It can be understood that the three sub-pixel regions S1 are the light-emitting regions of the light-emitting chip 100. That is, the sub-pixel regions S1 and the negative electrode region S17 are simultaneously the sub-pixel regions S1 and negative electrode region S17 of the light-emitting chip 100.

[0118] The multiple light-emitting sections 11 of the light-emitting unit 10 include a first light-emitting section 12a, a second light-emitting section 12b, and a third light-emitting section 12c. The first light-emitting section 12a is located in the first sub-pixel region S11, the second light-emitting section 12b is located in the second sub-pixel region S12, and the third light-emitting section 12c is located in the third sub-pixel region S13. The negative electrode region S17 is for forming part of the common electrode layer 16 and the second electrode 18. A detailed description of the common electrode layer 16 is provided below and is omitted here.

[0119] As shown in Figures 11 and 12, in this step, the first quantum well layer 121a and the first p-type gallium nitride layer 122a of the first light-emitting section 12a, the second quantum well layer and the second p-type gallium nitride layer of the second light-emitting section 12b, and the third quantum well layer and the third p-type gallium nitride layer of the third light-emitting section 12c are formed. Here, Figure 11 is a cross-sectional view along the cross-sectional line AA in Figure 12.

[0120] Exemplary, an initial n-type gallium nitride layer 1560 and an initial gallium nitride buffer layer 1550 are patterned using a photolithography process to form an n-type gallium nitride layer 156 and a gallium nitride buffer layer 155, where the n-type gallium nitride layer 156 is a conductive layer connecting the first light-emitting section 12a, the second light-emitting section 12b, the third light-emitting section 12c and the common electrode layer 16.

[0121] In step S103, a current diffusion layer 72 is formed as shown in Figure 13.

[0122] Exemplary, an initial current diffusion layer is first formed, and the initial current diffusion layer is patterned by a photolithography process to form a current diffusion layer 72. The current diffusion layer 72 includes a first current diffusion layer 125a located in a first sub-pixel region S11, a second current diffusion layer located in a second sub-pixel region S12 (not shown, see Figure 12), and a third current diffusion layer located in a third sub-pixel region S13 (not shown, see Figure 12).

[0123] ITO (indium tin oxide) is used as the material for the current diffusion layer 72, and the current diffusion layer 72 is provided in the sub-pixel region S1, which is advantageous for hole transport and improves the electrical characteristics of the light-emitting chip 100.

[0124] In some examples, as shown in Figure 14, the method for manufacturing the initial light-emitting unit 120 further includes the step of forming a reflective metal layer 123.

[0125] For example, an initial reflective metal layer is formed on the side of the current diffusion layer 72 away from the second substrate 91, and the initial reflective metal layer is patterned by a photolithography process to form a reflective metal layer 123 for each light-emitting unit 11. The reflective metal layer 123 has the role of reflecting light and can improve the light output ratio of the light-emitting unit 11.

[0126] Note that the reflective metal layer 123 is not shown in the following example drawings.

[0127] In S104, a common electrode layer 16 is formed as shown in Figures 15 and 16. Here, Figure 15 is a cross-sectional view along the cross-sectional line BB in Figure 16.

[0128] For example, a common electrode layer 16 is formed by a photolithography process.

[0129] For example, the material of the common electrode layer 16 is one of titanium, aluminum, nickel, and gold.

[0130] Exemplary, as shown in Figure 16, the common electrode layer 16 includes a first portion S17c that covers the negative electrode region S17 and a second portion S17b located between the common electrode layer 16 and the adjacent light-emitting portion 11.

[0131] As shown in Figure 16, the common electrode layer 16 further includes a portion located between two adjacent light-emitting parts 11. The common electrode layer 16 connects the n-type gallium nitride layer 156 and serves to raise the second electrode 18 (not shown, see Figure 17). The portion of the common electrode layer 16 located between two adjacent light-emitting parts 11 is referred to as the third portion S17a. By providing the second portion S17b of the common electrode layer 16 between the common electrode layer 16 and the adjacent light-emitting part 11, and the third portion S17a between the light-emitting parts 11, the light-emitting chip 100 can be reinforced and cracks in the light-emitting chip 100 can be prevented, and the volume of the common electrode layer 16 can be increased to play a role in current diffusion, thereby reducing the resistance of the light-emitting chip 100.

[0132] In some examples, as shown in Figure 16, the portion of the common electrode layer 16 located between two adjacent light-emitting sections 11 has a gap d4 between it and each of the two light-emitting sections 11. The range of the gap d4 between the light-emitting section 11 and the common electrode layer 16 is 1 / 10 to 1 / 3 of the range of the gap d5 between two adjacent light-emitting sections 11.

[0133] For example, the range of the spacing d4 between the light-emitting portion 11 and the common electrode layer 16 may be 1 / 10, 1 / 4, or 1 / 3 of the range of the spacing d5 between two adjacent light-emitting portions 11, and this is not particularly limited herein.

[0134] By providing a third portion S17a between two adjacent light-emitting portions 11, and setting the range of the distance d4 between the light-emitting portion 11 and the common electrode layer 16 to 1 / 10 to 1 / 3 of the range of the distance d5 between two adjacent light-emitting portions 11, the area of ​​the common electrode layer 16 can be increased while ensuring the aperture ratio of the region where the light-emitting portions 11 of the light-emitting chip 100 are located. This reduces the resistance of the light-emitting chip 100, prevents cracking of the light-emitting chip 100, and improves the stability of the light-emitting chip 100.

[0135] As an example, as shown in Figure 16, the distance d4 between the light-emitting section 11 and the common electrode layer 16 is in the range of 8 μm to 10 μm.

[0136] For example, the distance d4 between the light-emitting portion 11 and the common electrode layer 16 may be 8 μm, 9 μm, or 10 μm, and is not particularly limited herein.

[0137] In S105, as shown in Figures 15 and 16, a fifth insulating layer 19 is formed, and multiple vias H are provided in the fifth insulating layer 19.

[0138] Exemplary, an initial insulating layer is formed on the side of the common electrode layer 16 away from the second substrate 91 by a vapor deposition process, and a plurality of vias H are formed by a photolithography process. As shown in Figure 16, the plurality of vias H include a first via H1, a second via H2, a third via H3, and a fourth via H4. The first via H1 is provided corresponding to the first light-emitting portion 12a, the second via H2 is provided corresponding to the second light-emitting portion 12b, the third via H3 is provided corresponding to the third light-emitting portion 12c, and the fourth via H4 is provided corresponding to the negative electrode region S17.

[0139] In S106, as shown in Figures 17 and 18, an electrode 92 is formed, which includes a first sub-electrode 124a, a second sub-electrode 192, a third sub-electrode 193, and a second electrode 18. Here, Figure 17 is a cross-sectional view along the cross-sectional line CC in Figure 18.

[0140] Here, the first sub-electrode 124a, the second sub-electrode 192, and the third sub-electrode 193 are referred to as the first electrode 12.

[0141] For example, an electrode 92 is formed by a patterning process. Here, a first sub-electrode 124a is provided corresponding to the first light-emitting portion 12a, a second sub-electrode 192 is provided corresponding to the second light-emitting portion 12b, and a third sub-electrode 193 is provided corresponding to the third light-emitting portion 12c.

[0142] In step S107, as shown in Figure 19, a temporary substrate 70 is bonded to the side of the electrode 92 that is away from the second substrate 91.

[0143] The temporary substrate 70 is temporarily bonded by using a temporary adhesive layer 48 and a debonding layer 49. The temporary adhesive layer 48 provides adhesion, while the debonding layer 49 can release the adhesive force under irradiation with a target light (e.g., ultraviolet light and / or laser). The temporary adhesive layer 48 and the debonding layer 49 serve to temporarily bond the temporary substrate 70.

[0144] In step S108, the second substrate 91 is removed, as shown in Figure 20.

[0145] After removing the second substrate 91, the initial light-emitting unit 120 is formed.

[0146] For example, the second substrate 91 may be a sapphire substrate, and the sapphire substrate is peeled off by a laser.

[0147] For example, the second substrate 91 may be a silicon-based substrate, and the temporary substrate 70 is protected with an acid-resistant film or sealing wax, and the initial light-emitting unit 120 is placed in a hydrofluoric acid (HF) etching bath to remove the second substrate 91 by etching.

[0148] Compared to the light-emitting unit 10, the initial light-emitting unit 120 has a temporary substrate 70 on the side of the electrode 92 that is away from the gallium nitride buffer layer 155. The light-emitting unit 10 is obtained by removing the temporary substrate 70, adhesive layer 41, and debonding layer 49 from the initial light-emitting unit 120.

[0149] The following describes the steps for manufacturing the color conversion unit 20, including steps R201 to R203 as shown in Figure 21.

[0150] In R201, as shown in Figure 22, a filter layer 24 and a regulating dam layer 21 are formed on the initial first substrate 310.

[0151] The filter layer 24 includes a plurality of filter sections 28, and the regulating dam layer 21 is provided on the side of the filter layer 24 away from the initial first substrate 310.

[0152] For example, the initial first substrate 310 may be a glass substrate. Specifically, the first substrate 310 is provided to be transparent to visible light.

[0153] For example, a light-shielding layer 23 and a plurality of filter sections 28 are formed by coating, exposure, development, post-baking, etc. For example, as shown in Figure 23, the plurality of filter sections 28 include a first filter section 241, a second filter section 242, and a third filter section 243. For example, the first filter section 241 is a red filter section, the second filter section 242 is a green filter section, and the third filter section 243 is a blue filter section. Here, Figure 22 is a cross-sectional view along the cross-sectional line MM in Figure 23.

[0154] Exemplary, as shown in Figure 22, a defining dam layer 21 is formed on the side of the light-shielding layer 23 away from the initial first substrate 310 by methods such as coating, exposure, development, and post-baking, and a plurality of aperture regions K are defined in the defining dam layer 21. For example, as shown in Figure 23, the plurality of aperture regions K include a first aperture region K1, a second aperture region K2, and a third aperture region K3.

[0155] In R202, an optical function section 22 is formed as shown in Figure 24.

[0156] Exemplary, as shown in Figure 25, the optical functional section 22 is manufactured in the first aperture region K1, the second aperture region K2, and the third aperture region K3 by methods such as coating, exposure, development, post-bake, or inkjet printing. Exemplary, the optical functional section 22 includes a first optical functional section 22a, a first optical functional section 22b, and a third optical functional section 22c. Here, the first optical functional section 22a is formed in the first aperture region K1, the second optical functional section 22b is formed in the second aperture region K2, and the third optical functional section 22c is formed in the third aperture region K3. Here, Figure 24 is a cross-sectional view along the cross-sectional line EE of Figure 25.

[0157] Exemplary, as shown in Figures 18 and 25, the light-emitting chip 100 may have a red subpixel R, a green subpixel G, and a blue subpixel B. As shown in Figure 18, the plurality of light-emitting units 11 include a first light-emitting unit 12a, a second light-emitting unit 12b, and a third light-emitting unit 12c, all of which can be used to emit a first light, and the first light emitted from the first light-emitting unit 12a, the second light-emitting unit 12b, and the third light-emitting unit 12c each includes at least one of blue light and ultraviolet light. The first light-emitting unit 12a and the second light-emitting unit 12b are arranged in a line in a second direction Y, the second direction Y and the third direction Z intersect, and both intersect with the first direction X. For example, the second direction Y and the third direction Z are perpendicular, and both are perpendicular to the first direction X.

[0158] As shown in Figures 18 and 25, the first optical function unit 22a is used to convert first light into red light. Exemplarily, the first optical function unit 22a includes a red quantum dot for converting first light into red light, and preferably also includes scattering particles for scattering light. Here, the first light emitted from the first light-emitting unit 12a is irradiated onto the first optical function unit 22a distributed within the first aperture region K1. The red quantum dot can then convert the first light into red light, and the scattering particles can scatter both the first light and the red light. This ensures that more of the first light is converted into red light by the red quantum dot, and that the emission angle of the converted red light is large, thereby ensuring a large viewing angle for the display substrate 200 on which such light-emitting chips 100 are integrated. For this reason, the red sub-pixels R in the light-emitting chip 100 may include the first light-emitting unit 12a and the first optical function unit 22a.

[0159] The second optical function unit 22b is used to convert the first light into green light. Exemplarily, the second optical function unit 22b includes a green quantum dot for converting the first light into green light, and preferably also includes scattering particles for scattering light. Here, the first light emitted from the second light-emitting unit 12b is irradiated onto the second optical function unit 22b distributed within the second aperture region K2. The green quantum dot can then convert the first light into green light, and the scattering particles can scatter both the first light and the green light. This ensures that more of the first light is converted into green light by the green quantum dot, and that the emission angle of the converted green light is large, thereby ensuring a large viewing angle for the display substrate 200 on which such light-emitting chips 100 are integrated. For this reason, the green sub-pixel G in the light-emitting chip 100 may include the second light-emitting unit 12b and the second optical function unit 22b.

[0160] The third optical functional section 22c is used to convert the first light into blue light or to maintain the emission of blue light. Exemplarily, if the first light consists only of blue light, the third optical functional section 22c may be a transparent section or may include blue quantum dots, where the transparent section is used for direct transmission of the first light, and the blue quantum dots can be used to convert the first light into blue light with a different wavelength from the first light. Preferably, the third optical functional section 22c also includes scattering particles for scattering light. Here, the first light emitted from the third light-emitting section 12c is irradiated onto the third optical functional section 22c distributed within the third aperture region K3, and then the first light can be scattered by the scattering particles, thereby ensuring a large emission angle of blue light, and consequently ensuring a large viewing angle of the display substrate 200 on which such light-emitting chips 100 are integrated. For example, if the first light contains ultraviolet light, the third optical function unit 22c includes a blue quantum dot that converts the first light into blue light, or scattering particles for scattering light and blue quantum dots for converting ultraviolet light into blue light are simultaneously distributed within the third optical function unit 22c. Here, the first light emitted from the third light-emitting unit 12c irradiates the second optical function unit 22b distributed within the third aperture region K3, after which the ultraviolet light in the first light can be converted into blue light by the blue quantum dot, and the first light and blue light can be scattered by the scattering particles. This ensures that more ultraviolet light is converted into blue light by the blue quantum dot, and also ensures that the emission angle of the converted blue light is large, and consequently ensures that the viewing angle of the display substrate 200 on which such light-emitting chips 100 are integrated is large. For this reason, the blue sub-pixel B in the light-emitting chip 100 can include the third light-emitting unit 12c and the third optical function unit 22c.

[0161] In embodiments of this disclosure, as shown in Figures 23 and 24, the color conversion unit 20 in the light-emitting chip 100 may further include a filter layer 24. The filter layer 24 includes a plurality of filter sections 28.

[0162] For example, as shown in Figures 23 and 25, the filter section 28 may include a first filter section 241, a second filter section 242, and a third filter section 243. Here, the first filter section 241 may be provided in correspondence with the first optical function section 22a, the third filter section 243 may be provided in correspondence with the third optical function section 22c, and the second filter section 242 may be provided in correspondence with the second optical function section 22b. For this reason, the red sub-pixel R in the light-emitting chip 100 may further include the first filter section 241, the green sub-pixel G in the light-emitting chip 100 may further include the second filter section 242, and the blue sub-pixel B in the light-emitting chip 100 may further include the third filter section 243.

[0163] For example, the first light emitted from the first light-emitting unit 12a, the second light-emitting unit 12b, and the third light-emitting unit 12c among the multiple light-emitting units 11 is all blue light, and the first filter unit 241 may be a red color resist block, which can transmit red light and absorb light of other colors. In this way, the light emitted from the first optical function unit 22a can be emitted after passing through the first filter unit 241, and the first filter unit 241 can filter and remove light of colors other than red light, thereby ensuring that the red sub-pixel R in the light-emitting chip 100 can filter and remove the blue light component. In other feasible embodiments, the first filter section 241 may be a film layer that transmits red light and reflects blue light. In this way, after light emitted from the first optical function section 22a is irradiated onto the first filter section 241, the red light in this light can be emitted after passing through the first filter section 241, and the blue light in this light is reflected back to the first optical function section 22a by the first filter section 241. As a result, the red quantum dots in the first optical function section 22a can be excited by this blue light and converted into red light, thereby further improving the excitation efficiency of the red quantum dots.

[0164] For example, the first light emitted from the first light-emitting unit 12a, the second light-emitting unit 12b, and the third light-emitting unit 12c among the multiple light-emitting units 11 is all blue light, and the second filter unit 242 may be a green color resist block, which transmits green light and absorbs light of other colors. In this way, the light emitted from the second optical function unit 22b can be emitted after passing through the second filter unit 242, and the second filter unit 242 can filter and remove light of colors other than green light, thereby ensuring that the green subpixel G in the light-emitting chip 100 can filter and remove the blue light component. In other feasible embodiments, the second filter section 242 may be a film layer that transmits green light and reflects blue light. In this way, after light emitted from the second optical function section 22b is irradiated onto the second filter section 242, the green light in this light can be emitted after passing through the second filter section 242, and the blue light in this light is reflected back to the second optical function section 22b by the second filter section 242. As a result, the green quantum dots in the second optical function section 22b can be excited by this blue light and converted into green light, thereby further improving the excitation efficiency of the green quantum dots.

[0165] For example, the film layer structure of the first filter section 241 and the film layer structure of the second filter section 243 may be the same and may be manufactured by the same process. For instance, both the first filter section 241 and the second filter section 242 are film layers that transmit red and green light and reflect blue light.

[0166] For example, the first light emitted from the first light-emitting unit 12a, the second light-emitting unit 12b, and the third light-emitting unit 12c among the multiple light-emitting units 11 is all blue light, and the third filter unit 243 may be a blue color resist block, which can transmit blue light and absorb light of other colors. In this way, the light emitted from the third optical function unit 22c can be emitted after passing through the third filter unit 243, and the third filter unit 243 can filter out and remove light of other colors other than blue light, thereby ensuring that the blue subpixel B in the light-emitting chip 100 can emit purer blue light.

[0167] For example, the first light emitted from the first light-emitting part 12a, the second light-emitting part 12b, and the third light-emitting part 12c among the multiple light-emitting parts 11 is all blue light, and the second filter part 242 may be a transparent block, which is capable of transmitting blue light.

[0168] In R203, a sealing layer 26 is formed as shown in Figure 26.

[0169] After forming the sealing layer 26, the color conversion unit 20 is obtained.

[0170] For example, by CVD (chemical vapor deposition), a sealing layer 26 is deposited on the side of the initial first substrate 310 away from the initial first substrate 310, and the sealing layer 26 covers the optical function unit 22 and the defining dam layer 21. Specifically, the orthographic projection of the optical function unit 22 on the first substrate 30 and the orthographic projection of the defining dam layer 21 on the first substrate 30 are both located within the orthographic projection of the sealing layer 26 on the first substrate 30. In this way, the optical function unit 22 and the sealing layer 26 are integrally sealed, blocking hydrogen and oxygen and improving the lifespan of the light-emitting chip 100.

[0171] The following describes the steps of forming the adhesive layer 41, and aligning and bonding the color conversion unit 20 and the initial light-emitting unit 120 via the adhesive layer 41 to form the light-emitting chip 100, including steps T301 to T306 as shown in Figure 27.

[0172] In T301, as shown in Figure 28, a first indium zinc oxide layer 131a is formed on the side of the initial light-emitting unit 120 away from the temporary substrate 70.

[0173] Specifically, a first indium zinc oxide layer 131a is formed on the side of the gallium nitride buffer layer 155 that is away from the temporary substrate 70.

[0174] For example, a first indium zinc oxide layer 131a is formed by a photolithography process.

[0175] Exemplary, in the manufacturing process of the initial light-emitting unit 120, a first large plate M containing a plurality of initial light-emitting units 120 arranged in an array is formed synchronously, as shown in Figure 29. In this step, a first indium zinc oxide layer is formed on the initial light-emitting units 120 of the first large plate M. After this, the first large plate M is diced to form a plurality of first initial wafers A, which are circular, as shown in Figure 30, and each first initial wafer A contains a plurality of initial light-emitting units 120 provided with a first indium zinc oxide layer 131a. Exemplary, the size of the first initial wafers A is 4 inches or 6 inches.

[0176] Exemplary, the manufacturing process for the initial light-emitting unit 120 involves directly forming a first initial wafer A containing a plurality of initial light-emitting units 120 arranged in an array. The first initial wafer A may be circular and contain a plurality of initial light-emitting units 120, each having a first indium zinc oxide layer 131a. Exemplary, the size of the first initial wafer A is 4 inches or 6 inches.

[0177] In T302, as shown in Figure 31, a second indium zinc oxide layer 131b is formed on the side of the color conversion unit 20 that is away from the initial first substrate 310.

[0178] Specifically, a second indium zinc oxide layer 131b is formed on the side of the sealing layer 26 that is away from the initial first substrate 310.

[0179] For example, a second indium zinc oxide layer 131b is formed by a photolithography process.

[0180] In the manufacturing process of the color conversion unit 20, a second large plate N containing multiple color conversion units 20 arranged in an array is formed synchronously, as shown in Figure 32. In this step, a second indium zinc oxide layer 131b is formed on the color conversion units 20 of the second large plate N. After this, the second large plate N is diced to form multiple second master wafers B, and as shown in Figure 33, the second master wafers B are circular and contain multiple color conversion units 20 provided with the second indium zinc oxide layer 131b. The size of the second master wafers B and the size of the first initial wafer A are the same or approximately the same, facilitating the alignment and bonding process.

[0181] The following describes the steps for aligning and bonding the first initial wafer A and the second master wafer B to ultimately form a single light-emitting chip 100. Note that the following describes the formation of a single light-emitting chip 100 as an example.

[0182] In T303, as shown in Figure 34, the first indium zinc oxide layer 131a and the second indium zinc oxide layer 131b are bonded together.

[0183] Bonding of the first indium zinc oxide layer 131a and the second indium zinc oxide layer 131b enables bonding between the initial light-emitting unit 120 and the color conversion unit 20.

[0184] For example, the thickness d11 of the first indium zinc oxide layer 131a and the thickness d12 of the second indium zinc oxide layer 131b may be the same or different, and this is not particularly limited herein. The sum of the thickness d11 of the first indium zinc oxide layer 131a and the thickness d12 of the second indium zinc oxide layer 131b is the thickness of the indium zinc oxide bonding layer 131.

[0185] Exemplary, the step of bonding the first indium zinc oxide layer 131a and the second indium zinc oxide layer 131b includes U1 to U3.

[0186] In U1, the surface of the first indium zinc oxide layer 131a away from the temporary substrate 70 is treated with oxygen plasma to activate the surface of the first indium zinc oxide layer 131a.

[0187] In U2, the surface of the second indium zinc oxide layer 131b on the side away from the initial first substrate 310 is treated with oxygen plasma to activate the surface of the second indium zinc oxide layer 131b.

[0188] In U3, the first indium zinc oxide layer 131a and the second indium zinc oxide layer 131b are pressed together under certain temperature conditions to form an adhesive layer 41.

[0189] In T304, remove the temporary substrate 70.

[0190] After removing the temporary substrate 70, the initial light-emitting unit 120 is formed as the light-emitting unit 10, and its structure is as shown in Figure 35.

[0191] For example, the adhesive force to the debonding layer 49 is released under ultraviolet light irradiation, and the temporary adhesive layer 48, the debonding layer 49, and the temporary substrate 70 are removed.

[0192] In T305, the initial first substrate 310 is thinned to form the first substrate 30.

[0193] After this step, a structure including multiple light-emitting chips 100, as shown in Figure 5, is obtained.

[0194] For example, the thickness of the initial first substrate 310 is reduced to 60 μm to 200 μm. The shape of the light-emitting chip 100 formed in this way is close to a cuboid, improving the mounting stability of the light-emitting chip 100 and being advantageous for use in subsequent processes. Using a thicker initial first substrate 310 in the manufacturing process of the light-emitting chip 100 is advantageous for processing the light-emitting chip 100.

[0195] For example, an acid-resistant film is attached to the first side of the initial first substrate 310, and then the second side of the initial first substrate 310 is thinned, where the multiple light-emitting units 11 are provided on the first side of the initial first substrate 310.

[0196] In T306, a single light-emitting chip 100 is obtained by dicing.

[0197] For example, a blue film is attached to the side of the first substrate 30 away from the electrode 92 for protection, and then diced using a laser to obtain a single light-emitting chip 100.

[0198] For example, in step T306, dicing can be performed using a stealth dicing technique, and after stealth dicing, the light-emitting chips 100 are separated by stress. When dicing using a stealth dicing technique, it is not necessary to attach a blue film to the side of the first substrate 30 away from the electrodes 92 for protection.

[0199] By steps S101 to S108, R201 to R203, and T301 to T306 described above, the light-emitting chip 100 shown in Figure 5 is formed, and the projection of the indium zinc oxide bonding layer 131 onto the multiple light-emitting parts 11 covers the multiple light-emitting parts 11. In other words, when the indium zinc oxide bonding layer 131 is used as the adhesive layer 41, the indium zinc oxide bonding layer 131 is provided throughout the entire layer, and the orthographic projection of the indium zinc oxide bonding layer 131 onto the first substrate 30 completely covers the orthographic projection of the multiple light-emitting parts 11 onto the first substrate 30. Since the indium zinc oxide bonding layer 131 is a transparent film layer, the indium zinc oxide bonding layer 131 provided throughout the entire layer does not affect the emission of light from the multiple light-emitting parts 11. In this embodiment, by using an indium zinc oxide bonding layer 131 as the adhesive layer 41, the precision of the formed adhesive layer 41 can be improved, thereby improving the product yield of the light-emitting chip 100, and the thickness of the formed light-emitting chip 100 is reduced.

[0200] A second embodiment of the method for manufacturing the light-emitting chip 100 will be described below, and the light-emitting chip 100 shown in Figure 6 will be formed according to this embodiment. Note that by referring to the contents shown in Figure 6 and the step diagram during the manufacturing steps of the light-emitting chip 100, an example of the configuration of the light-emitting chip 100 can be understood.

[0201] Example 2

[0202] For illustrative purposes, refer to steps S101 to S108 for the step of manufacturing the initial light-emitting unit 120, and refer to steps R201 to R203 for the step of manufacturing the color conversion unit 20; the explanation is omitted here.

[0203] After forming the initial light-emitting unit 120 and the color conversion unit 20, the adhesive layer 41 formed by the adhesive layer 133 aligns and bonds the color conversion unit 20 and the initial light-emitting unit 120, thereby forming the light-emitting chip 100. As shown in Figure 36, this step includes steps P301 to P305.

[0204] In P301, as shown in Figure 37, an adhesive layer 133 is coated on the side of the initial light-emitting unit 120 that is away from the temporary substrate 70.

[0205] Specifically, the adhesive layer 133 is coated on the side of the gallium nitride buffer layer 155 that is away from the temporary substrate 70.

[0206] Exemplary, the material of the adhesive layer 133 is an epoxy resin-based organic adhesive material, and the adhesive layer 133 is formed by a stencil printing process, ensuring that no material remains on the dicing street J to form the adhesive layer 133. Here, as shown in Figure 8, the dicing street J is located between two adjacent light-emitting chips 100 on the wafer 300. Figure 8 shows only one dicing street J, and it can be seen that in order to obtain a single light-emitting chip 100, the region between two adjacent light-emitting chips 100 is either the dicing street J.

[0207] In the manufacturing process of the initial light-emitting unit 120, it is understood that a large plate containing multiple initial light-emitting units 120 arranged in an array is formed synchronously. In the manufacturing process of the color conversion unit 20, a large plate containing multiple color conversion units 20 arranged in an array is formed synchronously. The process further includes the step of dicing the large plates of the initial light-emitting units 120 and the large plates of the color conversion units 20 before aligning and bonding the color conversion units 20 and the initial light-emitting units 120.

[0208] A large plate of the initial light-emitting unit 120 is diced to form a plurality of third initial wafers C, each of which includes a plurality of initial light-emitting units 120 with an adhesive layer 133. A large plate of the color conversion unit 20 is diced to form a plurality of fourth master wafers D, each of which includes a plurality of color conversion units 20.

[0209] For example, in the manufacturing process of the initial light-emitting unit 120, a third initial wafer C containing multiple initial light-emitting units 120 arranged in an array is formed directly. There is no need to dic a large wafer. For example, the shape of the third initial wafer C is circular. For example, the shape of the fourth master wafer D is circular, and the sizes of both are the same or nearly the same, facilitating the alignment and bonding process.

[0210] The structures of the third initial wafer C and the fourth master wafer D can be described by referring to the examples of the first initial wafer A and the second master wafer B shown in Figures 30 and 33, respectively, and will not be explained here. The difference is that the third initial wafer C includes a plurality of initial light-emitting units 120 provided with an adhesive layer 133, while the first initial wafer A includes a plurality of initial light-emitting units 120 provided with a first indium zinc oxide layer 131a. The fourth master wafer D includes a plurality of color conversion units 20, and the second master wafer B includes a plurality of color conversion units 20 provided with a second indium zinc oxide layer 131b.

[0211] The following describes the steps of aligning and bonding the third initial wafer C and the fourth master wafer D to ultimately form a single light-emitting chip 100.

[0212] In P302, as shown in Figure 38, the color conversion unit 20 and the initial light emission unit 120 are aligned and bonded together.

[0213] The color conversion unit 20 and the initial light emission unit 120 are bonded together by the adhesive layer 133.

[0214] In step P303, remove the temporary circuit board 70.

[0215] For specific steps, please refer to step T304; the explanation will be omitted here.

[0216] In P304, the initial first substrate 310 is thinned to form the first substrate 30.

[0217] For specific steps, please refer to step T305; the explanation will be omitted here.

[0218] In P305, a single light-emitting chip 100 is obtained by dicing.

[0219] For specific steps, please refer to step T306; the explanation will be omitted here.

[0220] By following the steps S101-S108, R201-R203, and P301-P305 described above, the light-emitting chip 100 shown in Figure 6 is formed. The adhesive layer 41 is the adhesive layer 133, and the projection of the adhesive layer 133 onto the multiple light-emitting parts 11 covers the multiple light-emitting parts 11. In other words, the adhesive layer 133 is provided throughout the entire layer, and the orthographic projection of the adhesive layer 133 onto the first substrate 30 covers the orthographic projection of the multiple light-emitting parts 11 onto the first substrate 30. The adhesive layer 133 is made of a transparent organic adhesive material, and the adhesive layer 133 provided throughout the entire layer does not affect the emission of light from the multiple light-emitting parts 11. In this embodiment, by using the adhesive layer 133 as the adhesive layer 41, the transfer efficiency of the Micro-LED can be improved, the thickness of the chip can be reduced, and the product yield can be improved.

[0221] A third embodiment of the method for manufacturing the light-emitting chip 100 will be described below, and the light-emitting chip 100 shown in Figure 7 will be formed according to this embodiment. Note that by referring to the contents shown in Figure 7 and the step diagram during the manufacturing steps of this light-emitting chip 100, an example of the configuration of the light-emitting chip 100 can be understood.

[0222] Example 3

[0223] For illustrative purposes, refer to steps S101 to S108 for the step of manufacturing the initial light-emitting unit 120, and refer to steps R201 to R203 for the step of manufacturing the color conversion unit 20; the explanation is omitted here.

[0224] After forming the initial light-emitting unit 120 and the color conversion unit 20, the color conversion unit 20 and the initial light-emitting unit 120 are aligned and bonded by the adhesive layer 41 formed by the metal bonding layer 132, thereby forming the light-emitting chip 100. As shown in Figure 39, this step includes Q301 to Q306.

[0225] In Q301, as shown in Figures 40 and 41, a first initial sub-metal layer 1310 and a second initial sub-metal layer 1320 are formed on the side of the initial light-emitting unit 120 away from the temporary substrate 70.

[0226] Specifically, a first initial submetal layer 1310 and a second initial submetal layer 1320 are formed on the side of the gallium nitride buffer layer 155 away from the temporary substrate 70. Here, Figure 40 is a cross-sectional view along the cross-sectional line FF of Figure 41.

[0227] For example, by a vapor deposition process, a material for forming a first initial submetal layer 1310 is deposited over the entire surface of the gallium nitride buffer layer 155 away from the temporary substrate 70, and the first initial submetal layer 1310 is formed by patterning using a photolithography process. One of the following materials can be used for the first initial submetal layer 1310: Au (gold), Ag (silver), Pb (lead), and Sn (tin).

[0228] Exemplarily, as shown in Figure 41, the first initial sub-metal layer 1310 includes three opening regions K, and the three opening regions K are respectively a first sub-opening region K11, a second sub-opening region K21, and a third sub-opening region K31. The first sub-opening region K11 is provided corresponding to the first sub-pixel region S11, the second sub-opening region K21 is provided corresponding to the second sub-pixel region S12, and the third sub-opening region K31 is provided corresponding to the third sub-pixel region S13. That A is provided corresponding to B means that the orthographic projection of A on the temporary substrate 70 and the orthographic projection of B on the temporary substrate 70 overlap or substantially overlap. For example, that the first sub-opening region K11 is provided corresponding to the first sub-pixel region S11 means that the orthographic projection of the first sub-opening region K11 on the temporary substrate 70 and the orthographic projection of the first sub-pixel region S11 on the temporary substrate 70 overlap or substantially overlap.

[0229] Exemplarily, as shown in Figure 40 and Figure 41, the second initial sub-metal layer 1320 includes a plurality of first-type metal bumps 132t, and the structure of the first-type metal bumps 132t may be cylindrical or conical.

[0230] The material of the second initial sub-metal layer 1320 may be In (indium).

[0231] In Q302, as shown in Figure 42 and Figure 43, a third initial sub-metal layer 1330 is formed on the side of the color conversion unit 20 away from the initial first substrate 310.

[0232] That is, the third initial sub-metal layer 1330 is formed on the side of the sealing layer 26 away from the initial first substrate 310.

[0233] Exemplary, a deposition process deposits material for forming a third initial submetal layer 1330 over the entire surface of the sealing layer 26, away from the initial first substrate 310, and the third initial submetal layer 1330 is formed by patterning using a photolithography process. The material for the third initial submetal layer 1330 can be any one of Au (gold), Ag (silver), Pb (lead), or Sn (tin). The material for the third initial submetal layer 1330 may be the same as the material for the first initial submetal layer 1310.

[0234] Exemplary, as shown in Figure 43, the third initial sub-metal layer 1330 includes three aperture regions K, which are the fourth sub-aperture region K41, the fifth sub-aperture region K51, and the sixth sub-aperture region K61, respectively. The fourth sub-aperture region K41 is provided in correspondence with the first sub-pixel region S11, the fifth sub-aperture region K51 is provided in correspondence with the second sub-pixel region S12, and the sixth sub-aperture region K61 is provided in correspondence with the third sub-pixel region S13.

[0235] In Q303, as shown in Figure 44, the first initial submetal layer 1310, the second initial submetal layer 1320, and the third initial submetal layer 1330 are bonded together.

[0236] Illustratively, bonding of the first initial sub-metal layer 1310, the second initial sub-metal layer 1320, and the third initial sub-metal layer 1330 is achieved using metal wafer bonding technology. Metal wafer bonding technology refers to a technique that relies on forming a eutectic alloy between two different metals and completely bonding them at a temperature lower than the melting point of each metal. Metal wafer bonding technology can be divided into solid-liquid interdiffusion bonding technology and solid-phase diffusion bonding technology based on the difference in bonding temperature. Here, solid-liquid interdiffusion bonding technology has lower requirements for the flatness of the film layer compared to solid-phase diffusion bonding technology. Furthermore, solid-liquid interdiffusion bonding technology has high bonding strength and a short bonding time. Therefore, solid-liquid interdiffusion bonding technology is adopted to form the metal bonding layer 132 and to achieve alignment and bonding of the color conversion unit 20 and the initial light-emitting unit 120.

[0237] As shown in Figure 44, the formed metal bonding layer 132 includes a first sub-metal layer 132a, a second sub-metal layer 132b, and a third sub-metal layer 132c. The first initial sub-metal layer 1310, the second initial sub-metal layer 1320, and the third initial sub-metal layer 1330 form the metal bonding layer 132 by metal wafer bonding technology, and the second sub-metal layer 132b is a eutectic alloy layer formed from a portion of the first initial sub-metal layer 1310, the second initial sub-metal layer 1320, and the third initial sub-metal layer 1330.

[0238] Exemplary, as shown in Figure 44, the metal bonding layer 132 includes a fourth aperture region K4, a fifth aperture region, and a sixth aperture region, wherein the fourth aperture region K4 is provided corresponding to the first sub-pixel region S11, the fifth aperture region is provided corresponding to the second sub-pixel region S12, and the sixth aperture region is provided corresponding to the third sub-pixel region S13. For the settings of the second sub-pixel region S12 and the third sub-pixel region S13, please refer to Figure 43. The first sub-aperture region K11 and the fourth sub-aperture region K41 form the fourth aperture region K4. Similarly, the second sub-aperture region K21 and the fifth sub-aperture region K51 form the fifth aperture region, and the third sub-aperture region K31 and the sixth sub-aperture region K61 form the sixth aperture region. For the settings of the second sub-opening region K21, the third sub-opening region K31, the fifth sub-opening region K51, and the sixth sub-opening region K61, please refer to Figures 41 and 43.

[0239] In Q304, remove the temporary substrate 70.

[0240] For specific steps, please refer to step T304; the explanation will be omitted here.

[0241] In Q305, the initial first substrate 310 is thinned to form the first substrate 30.

[0242] For specific steps, please refer to step T305; the explanation will be omitted here.

[0243] In Q306, a single light-emitting chip 100 is obtained by dicing.

[0244] For specific steps, please refer to step T306; the explanation will be omitted here.

[0245] By following the steps S101 to S108, R201 to R203, and Q301 to Q306 described above, the light-emitting chip 100 shown in Figure 7 is formed. The adhesive layer 41 is a metal bonding layer 132, and the metal bonding layer 132 needs to have aperture regions K corresponding to the multiple light-emitting parts 11. Since the metal bonding layer 132 does not transmit light, it is necessary to provide apertures in the regions of the metal bonding layer 132 corresponding to the light-emitting parts 11 to emit light. The region of the metal bonding layer 132 corresponding to the light-emitting parts 11 refers to the region where the orthographic projection of the light-emitting part 11 on the first substrate 30 overlaps with the orthographic projection of the metal bonding layer 132 on the first substrate 30. In this embodiment, by using a metal bonding layer 132 as the adhesive layer 41, the accuracy of the formed adhesive layer 41 can be improved.

[0246] Exemplary, as shown in Figure 46, the first light-emitting part 12a is provided corresponding to the first sub-electrode 124a, the third light-emitting part 12c is provided corresponding to the third sub-electrode 193, and the distance d6 between the first sub-electrode 124a and the third sub-electrode 193 is smaller than the distance d5 between the first light-emitting part 12a and the third light-emitting part 12c.

[0247] By setting the distance d6 between two adjacent anode electrodes to be less than or equal to the distance d5 between two light-emitting sections 11 on which the two anode electrodes are located, that is, by ensuring that the boundary of the anode electrode extends beyond the boundary of the light-emitting section 11 to which it belongs, it is possible to guarantee that the anode electrode has a conductive function while simultaneously having a large surface area for light reflection, thereby improving the light-emitting effect of the light-emitting chip 100.

[0248] In some embodiments, as shown in Figures 45 and 46, the projection of the filter unit 28 on the first substrate 30 covers the projection of the light-emitting unit 11 corresponding to the filter unit 28 on the first substrate 30. The projection of the optical function unit 22 on the first substrate 30 covers the projection of the filter unit 28 corresponding to the optical function unit 22 on the first substrate 30. Here, Figure 46 is a cross-sectional view along the cross-sectional line HH in Figure 45.

[0249] That is, in any direction, the projected dimension of the filter portion 28 on the first substrate 30 is larger than the projected dimension of the light emitting portion 11 corresponding to the filter portion 28 on the first substrate 30. The projected dimension of the optical function portion 22 on the first substrate 30 is larger than the projected dimension of the filter portion 28 corresponding to the optical function portion 22 on the first substrate 30.

[0250] In some embodiments, as shown in FIG. 45 and FIG. 46, the range of the dimension d10 of the defining dam layer 21 in the first direction X is 10 μm to 30 μm.

[0251] For example, the dimension d10 of the defining dam layer 21 in the first direction X is 10 μm, 15 μm, 20 μm, 25 μm, 28 μm or 30 μm, etc., which is not particularly limited in this specification. By setting the dimension d10 of the defining dam layer 21 in the first direction X, that is, its thickness, to 10 μm to 30 μm, the thickness of the defining dam layer 21 is increased, and since the optical function portion 22 is disposed in the opening region K of the defining dam layer 21, the thickness of the optical function portion 22 is synchronously increased. With such a design, the light emission effect of the light emitting chip 100 can be improved.

[0252] In some embodiments, as shown in FIG. 46, the projection of the color conversion unit 20 on the first substrate 30 covers the projection of the adhesive layer 41 on the first substrate 30.

[0253] For example, an epoxy resin-based organic adhesive material is used as the material of the adhesive layer 41, and by setting the projection of the color conversion unit 20 on the first substrate 30 to cover the projection of the adhesive layer 41 on the first substrate 30, it can be ensured that no organic adhesive material remains at the position of the dicing street J (see FIG. 8), which facilitates dicing to form the light emitting chip 100.

[0254] In some examples, as shown in FIG. 46, the range of the distance d14 between the projection boundary of the color conversion unit 20 on the first substrate 30 and the projection boundary of the adhesive layer 41 on the first substrate 30 is 0 μm to 10 μm.

[0255] For example, the distance d14 between the projected boundary of the color conversion unit 20 on the first substrate 30 and the projected boundary of the adhesive layer 41 on the first substrate 30 may be 0 μm, 2 μm, 5 μm, 7 μm, or 10 μm, and is not particularly limited herein.

[0256] By setting the distance d14 between the projection boundary on the first substrate 30 of the color conversion unit 20 and the projection boundary on the first substrate 30 of the adhesive layer 41 to a range of 0 μm to 10 μm, the bonding stability of the light-emitting chip 100 is ensured. Furthermore, when an epoxy resin-based organic adhesive material is used as the material for the adhesive layer 41, it can be guaranteed that no organic adhesive material remains at the position of the dicing street J (see Figure 8).

[0257] The second semiconductor layer 15 of the light-emitting unit 10 will be described below. The second semiconductor layer 15 may be the first carrier transport layer, or the second semiconductor layer 15 may be a stack of the first carrier buffer layer and a buffer layer. Here, the first carrier transport layer may be an n-type gallium nitride layer 156, and the buffer layer 156 may be a gallium nitride buffer layer 155, where the gallium nitride buffer layer 155 is located on the side of the n-type gallium nitride layer 156 away from the light-emitting portion 11.

[0258] In some examples, as shown in Figure 47, the adhesive layer 41 of the light-emitting chip 100 is an adhesive layer 133, the refractive index of the second semiconductor layer 15 is 2.45, and the refractive index of the adhesive layer 41 is 1.56. Because the difference between the refractive index of the second semiconductor layer 15 and the refractive index of the adhesive layer 41 is large, the light from the light-emitting chip 100 undergoes total internal reflection at the interface between the second semiconductor layer 15 and the adhesive layer 41. Light L1 whose angle with respect to the first direction X is less than the critical angle α1 propagates upward and enters the color conversion unit 20, while light L2 whose angle with respect to the first direction X is greater than or equal to the critical angle α1 undergoes total internal reflection in the second semiconductor layer 15, propagates laterally in the second semiconductor layer 15, and forms an optical waveguide. Here, the first direction X is the direction in which the light-emitting unit 10 and the color conversion unit 20 are stacked.

[0259] The critical angle α1 at which total internal reflection occurs between the second semiconductor layer 15 and the adhesive layer 41 is calculated using the following formula. sinα1 × 2.45 = sin90° × 1.56

[0260] Therefore, α1 is 39.5°.

[0261] In other words, light L1 whose angle with the first direction X is less than 39.5° propagates upward and enters the color conversion unit 20, while light L2 whose angle with the first direction X is 39.5° or greater undergoes total internal reflection in the second semiconductor layer 15.

[0262] The refractive index of air is 1.0, and because the difference between the refractive index of the second semiconductor layer 15 and the refractive index of air is large, total internal reflection occurs at the interface between the second semiconductor layer 15 and the air. The normal perpendicular to the second semiconductor layer 15 is called the first normal, and light whose angle with the first normal f1 is less than the critical angle α2 is emitted from the second semiconductor layer 15 into the air, while light whose angle with the first normal f1 is greater than or equal to the critical angle α2 is totally internally reflected in the second semiconductor layer 15.

[0263] The critical angle α2 at which total internal reflection occurs between the second semiconductor layer 15 and air is calculated using the following formula. sinα² × 2.45 = sin90° × 1.0

[0264] Therefore, α2 is 24°.

[0265] As shown in Figure 47, light L1 with an angle of less than 24° with the first normal f1 is emitted from the second semiconductor layer 15 into the air, while light with an angle of 24° or more with the first normal f1 undergoes total internal reflection in the second semiconductor layer 15. After light L3 emitted from side B1 of the second semiconductor layer 15 is scattered in the air, light leakage W1 is formed near side B2 of the first substrate 30. As shown in Figure 48, light L3 emitted from side B1 of the second semiconductor layer 15 propagates obliquely through the air to reach side B2 of the first substrate 30, where light leakage W2 is formed.

[0266] Due to the effects of the light leakage W1 and W2 described above, the light emission efficiency of the display board 200 decreases, and the display effect of the display board 200 is reduced. Furthermore, the light leakage W2 also enters the adjacent light-emitting chip 100, causing the problem of poor light uniformity.

[0267] Based on this, as shown in Figures 49 and 50, embodiments of the present disclosure provide a light-emitting chip 100 which includes a light-emitting unit 10 and a color conversion unit 20 located on the light-emitting side G of the light-emitting unit 10.

[0268] Here, the light-emitting unit 10 includes a plurality of light-emitting sections 11, each light-emitting section 11 including a first electrode 12, a first semiconductor layer 13, and a light-emitting layer 14 arranged in a stack along a first direction X.

[0269] For example, the first electrode 12 may be an anode, and the material of the first semiconductor layer 13 includes p-type gallium nitride.

[0270] For example, one of the multiple light-emitting units 11 may be configured to emit light of one of multiple colors, the multiple light-emitting units 11 may be configured to emit light of the same color, or the multiple light-emitting units 11 may be arranged to emit light of different colors.

[0271] The light-emitting unit 10 further includes a second semiconductor layer 15 and a common electrode layer 16, the second semiconductor layer 15 being arranged on the light-emitting side G of the plurality of light-emitting units 11. The second semiconductor layer 15 includes a connecting portion 151 and an auxiliary portion 152, the connecting portion 151 being connected to the light-emitting unit 11. At least a portion of the auxiliary portion 152 is located between adjacent connecting portions 151, the connecting portion 151 and the auxiliary portion 152 are an integral structure, and the common electrode layer 16 is being connected to the auxiliary portion 152.

[0272] Specifically, the region of the second semiconductor layer 15 in the connection portion 151 is defined as the region in the second semiconductor layer 15 that is in contact with the light-emitting portion 11. If the second semiconductor layer 15 and the light-emitting portion 11 are not in direct contact, the region of the second semiconductor layer 15 in the connection portion 151 is defined as the region limited by the orthographic projection of the extending surface of the second semiconductor layer 15 of the light-emitting portion 11.

[0273] The surface of the second semiconductor layer 15 facing the color conversion unit 20 is the first surface A1, and the surface of the second semiconductor layer 15 away from the color conversion unit 20 is the second surface A2. Here, the second semiconductor layer 15 may further include a side surface B1, which is located between the first surface A1 and the second surface A2 and connected to the first surface A1 and the second surface A2. The light-emitting chip 100 further includes a light-disturbing section 17, which is located around and / or inside the second semiconductor layer 15. Here, the light-disturbing section 17 can be used to disrupt the optical path of light emitted from the light-emitting layer 14 that propagates through the interior of the second semiconductor layer 15 and exits from side surface B1 of the second semiconductor layer 15.

[0274] By arranging the light disturbance section 17 around and / or inside the second semiconductor layer 15, the light emitted from the light-emitting layer 14 propagates through the inside of the second semiconductor layer 15 and disrupts the optical path emitted from the side surface B1 of the second semiconductor layer 15. That is, the light L3 (shown in Figures 47 and 48) emitted from the side surface B1 of the second semiconductor layer 15 can be effectively disrupted, thereby avoiding light leakage W1 (shown in Figure 47) and light leakage W2 (shown in Figure 48) formed on the first substrate 30 by the light L3 emitted from the side surface B1 of the second semiconductor layer 15, and improving the light emission efficiency and display effect of the display substrate 200.

[0275] In some embodiments, the portion of the auxiliary portion 152 located between adjacent connecting portions 151 has one side connected to one connecting portion 152 and the other side connected to the other connecting portion 152.

[0276] In some embodiments, as shown in Figure 50, the light disturbance portion 17 covers the side surface B1 of the second semiconductor layer 15.

[0277] The light-disturbing portion 17 is arranged in a ring shape so as to surround the side surface B1 of the second semiconductor layer 15.

[0278] Since the light-disturbing portion 17 is provided so as to cover the side surface B1 of the second semiconductor layer 15, the light-disturbing portion 17 can absorb or reflect light that propagates laterally within the second semiconductor layer 15 and reaches the side surface B1 of the second semiconductor layer 15.

[0279] In some embodiments, as shown in Figure 50, the light-emitting section 11 further includes a first electrode 12 electrically connected to the light-emitting layer 14, the first electrode 12 being located on the side of the light-emitting layer 14 away from the color conversion unit 20, and the material of the light-disturbing section 17 is the same as the material of the first electrode 12.

[0280] The light disturbance section 17, made of the same material as the first electrode 12, is used to reflect the light that is obtained after the light emitted from the light-emitting layer 14 propagates inside the second semiconductor layer 15 and exits from the side surface B1 of the second semiconductor layer 15.

[0281] In other words, the first electrode 12 is formed by patterning, and at the same time, the light-disturbing portion 17 is formed, and the light-disturbing portion 17 and the first electrode 12 are arranged in the same layer.

[0282] "Same layer" refers to a layer structure formed by creating film layers to form a specific pattern using the same deposition process, and then forming it using the same mask template in a primary patterning process. Depending on the specific pattern, the primary patterning process may include multiple exposure, development, or etching processes, and the specific pattern in the formed layer structure may be continuous or discontinuous, and these specific patterns may be at different heights or have different thicknesses.

[0283] As can be seen from the manufacturing method for the light-emitting chip 100 described above, as shown in Figure 38, it is necessary to first manufacture the initial light-emitting unit 120 and the color conversion unit 20, then form an adhesive layer 41, bond the initial light-emitting unit 120 and the color conversion unit 20 together to obtain the light-emitting unit 10, and thus form the light-emitting chip 100. For the specific steps of forming the color conversion unit 20 and the adhesive layer 41, refer to the above description and will be omitted here. Similarly, in the following embodiment, only the manufacturing method for the initial light-emitting unit 120 will be described.

[0284] The difference in this embodiment is that, when manufacturing the initial light-emitting unit 120, step S106 (shown in Figure 9) involves forming the electrode 92 (shown in Figure 17) and simultaneously forming the light-disturbing portion 17. Other steps for manufacturing the initial light-emitting unit 120 can be found in the above description and are omitted here.

[0285] The following describes another embodiment, as shown in Figure 51, where the material of the light disturbance section 17 is the same as the material of the second electrode 18.

[0286] The light-disturbing portion 17, made of the same material as the second electrode 18, is used to reflect the light that is obtained after the light emitted from the light-emitting layer 14 propagates inside the second semiconductor layer 15 and exits from the side surface B1 of the second semiconductor layer 15.

[0287] For example, when manufacturing the initial light-emitting unit 120, step S104 (shown in Figure 9) involves forming the second electrode 18 (shown in Figure 15) and simultaneously forming the light-disturbing portion 17. Other steps for manufacturing the initial light-emitting unit 120 can be found in the above description and are omitted here.

[0288] In other words, the first electrode 12 is formed by patterning, and at the same time, the light-disturbing portion 17 is formed, and the light-disturbing portion 17 and the second electrode 18 are arranged in the same layer.

[0289] The following provides another embodiment in which the light disturbance portion 17 covers the side surface B1 of the second semiconductor layer 15.

[0290] In some embodiments, as shown in Figures 52 and 53, the material of the light disturbance section 17 includes at least one of a metallic material, a semiconductor material, and a black resin.

[0291] Exemplary, as shown in Figure 52, the material of the light disturbance section 17 includes a black resin, which is used to propagate within the second semiconductor layer 15 and absorb light emitted from the side surface B1 of the second semiconductor layer 15.

[0292] Exemplary, as shown in Figure 53, the material of the light disturbance section 17 includes amorphous silicon, which is a semiconductor material, and is used to propagate within the second semiconductor layer 15 and absorb light emitted from the side surface B1 of the second semiconductor layer 15.

[0293] Exemplary, as shown in Figure 52, the material of the light disturbance section 17 includes silver, a metallic material, which is used to propagate within the second semiconductor layer 15 and reflect light emitted from the side surface B1 of the second semiconductor layer 15.

[0294] For example, when manufacturing the initial light-emitting unit 120, in step S102 (shown in Figure 9), after the first semiconductor layer 13, light-emitting layer 14, n-type gallium nitride layer 156, and gallium nitride buffer layer 155 are formed, a light-disturbing portion 17 is formed on the side surface of the n-type gallium nitride layer 156 and / or gallium nitride buffer layer 155. For other steps in manufacturing the initial light-emitting unit 120, refer to the above description and will be omitted here.

[0295] In some embodiments, as shown in Figures 52 and 53, the cross-section of the second semiconductor layer 15 is trapezoidal, meaning that the side surface B1 of the second semiconductor layer 15 is at an angle with the first direction X. By positioning the side surface B1 of the second semiconductor layer 15 diagonally downward away from the color conversion unit 20, light propagating inside the second semiconductor layer 15 and emitted from the side surface B1 of the second semiconductor layer 15 is reflected in a direction away from the color conversion unit 20, preventing light propagating inside the second semiconductor layer 15 and emitted from the side surface B1 of the second semiconductor layer 15 from being emitted from the first substrate 30, thereby improving the light leakage problem in the first substrate 30.

[0296] The following provides another embodiment in which the light disturbance portion 17 covers the side surface B1 of the second semiconductor layer 15.

[0297] In some embodiments, as shown in Figures 54 and 59, the material of the light disturbance section 17 includes nanosphere material.

[0298] In some examples, as shown in Figure 54, the material of the light disturbance section 17 includes nanosilver, nanogold, or nanoaluminum.

[0299] In other words, a nanolayer 32 covering the side surface B1 of the second semiconductor layer 15 is provided.

[0300] For example, the radius range of nanosilver is 25 nm to 70 nm.

[0301] For example, the radii of the nanosilver particles may be 25 nm, 35 nm, 40 nm, 50 nm, 65 nm, or 70 nm, and are not particularly limited herein.

[0302] Because the dielectric constant of the metallic material is high, the arrangement of the nanolayer 32 made of metallic nanomaterial enables high reflectivity over a wide frequency band range, and light that propagates laterally within the second semiconductor layer 15 and reaches the side surface B1 of the second semiconductor layer 15 can be reflected.

[0303] In some examples, as shown in Figure 54, the light disturbance section 17 includes a conductive material, and the light-emitting unit 10 further includes a first insulating layer 31 provided between the light disturbance section 17 and the side surface of the second semiconductor layer 15.

[0304] The light-emitting unit 10 further includes a common electrode layer 16, which is located on the side of the second semiconductor layer 15 away from the color conversion unit 20, and the common electrode layer 16 further includes a first reflection pattern 40 which includes a third portion S17a belonging to the common electrode layer 16 and is spaced apart from the light-emitting unit 11.

[0305] The light-emitting unit further includes a second reflection pattern 45, which is provided in the region between the light-emitting part 11 and the common electrode layer 16 and in the region between the first reflection pattern 40 and the light-emitting part 11, and covers the sides of the first reflection pattern 40, the light-emitting part 11, and the common electrode layer 16.

[0306] For example, the second reflection pattern 45 and the light disturbance section 17 are arranged in the same layer. The second reflection pattern 45 is used to reflect light emitted from the second surface A2 of the second semiconductor layer 15, thereby improving the light emission efficiency of the display substrate 200.

[0307] For example, the second reflection pattern 45 covers the side surface of the light-emitting section 11, and the second reflection pattern 45 covers the side surface of the current diffusion layer 72, the side surface of the first semiconductor layer 13, and the side surface of the light-emitting layer 14 of the light-emitting section 11.

[0308] For example, when manufacturing the initial light-emitting unit 120, in step S104 (shown in Figure 9), when forming the common electrode layer 16, the third portion S17a of the common electrode layer 16 and the first reflection pattern 40 are formed synchronously, as shown in Figure 49. After this, the first insulating layer 31 and the nanolayer 32 are formed to obtain the light-disturbing portion 17 and the second reflection pattern 45. For other steps in manufacturing the initial light-emitting unit 120, refer to the above description and will be omitted here.

[0309] As an example, as shown in Figure 54, a third insulating layer 46 is further provided between the second reflection pattern 45 and the second semiconductor layer 15, between the second reflection pattern 45 and the first reflection pattern 40, between the second reflection pattern 45 and the light-emitting part 11, and between the second reflection pattern 45 and the common electrode layer 16.

[0310] It can be understood that the first insulating layer 31 and the third insulating layer 46 are arranged in the same layer.

[0311] Exemplary, the materials of the first insulating layer 31 and the third insulating layer 46 include silicon dioxide. By providing the first insulating layer 31 and the third insulating layer 46, short circuits caused by connections between the nanospheres and the current diffusion layer 72, first semiconductor layer 13, light-emitting layer 14, and common electrode layer 16 of the light-emitting section 11 can be prevented.

[0312] In some examples, as shown in Figure 53, the light-emitting unit 10 further includes a second insulating layer 47 provided on the side of the light-disturbing section 17 away from the second semiconductor layer 15.

[0313] For example, as shown in Figure 54, a fourth insulating layer can be provided on the side of the second reflection pattern 45 that is away from the second semiconductor layer 15 and the common electrode layer 16.

[0314] By providing the second insulating layer 47 and the fourth insulating layer, it is possible to prevent short circuits caused by electrical conductivity between the second semiconductor layer 15 and the common electrode layer 16 due to overflow of solder paste in a subsequent process.

[0315] The thickness range of the first insulating layer 31, the second insulating layer 47, the third insulating layer 46, and the fourth insulating layer is 0.2 μm to 0.5 μm.

[0316] Exemplary examples include the thickness of the first insulating layer 31 being 0.2 μm, 0.3 μm, 0.4 μm, or 0.5 μm, and is not particularly limited herein.

[0317] Exemplary examples include the thickness of the second insulating layer 47 being 0.2 μm, 0.3 μm, 0.4 μm, or 0.5 μm, and is not particularly limited herein.

[0318] For example, the thickness of the third insulating layer 46 may be 0.2 μm, 0.3 μm, 0.4 μm, or 0.5 μm, and is not particularly limited herein.

[0319] Exemplary examples include the thickness of the fourth insulating layer being 0.2 μm, 0.3 μm, 0.4 μm, or 0.5 μm, and is not particularly limited herein.

[0320] Exemplary, a configuration for the nanolayer 32 is provided, where Figure 55 shows a cross-sectional view along the cross-sectional line DD of Figure 54, and Figure 56 shows a view of the nanolayer 32 from direction E of Figure 54, where direction E is perpendicular to the nanolayer 32. That is, the nanolayer 32 covers the side of the first insulating layer 31 away from the side B1 of the second semiconductor layer 15.

[0321] As shown in Figure 57, by arranging the nanolayer 32, light that propagates laterally within the second semiconductor layer 15 and reaches the side surface B1 of the second semiconductor layer 15 can be effectively reflected, and as shown in Figure 58, the reflectivity of the nanolayer 32 for light exceeds 80%. Furthermore, the light disturbance section 17 made of metal nanomaterial also absorbs light that propagates laterally within the second semiconductor layer 15 and reaches the side surface B1 of the second semiconductor layer 15.

[0322] In some embodiments, as shown in Figure 59, the material of the light disturbance section 17 includes semiconductor nanomaterials.

[0323] In other words, a nanolayer 32 is placed on the side B1 of the second semiconductor layer 15, covering side B1. For example, the material of the nanolayer 32 contains spherical silicon, and the radius of the silicon is 60 nm.

[0324] Furthermore, silicon has a high dielectric constant, and nanometer-sized silicon can generate strong Mie resonances. Electromagnetic energy near the resonant frequency is significantly enhanced, and electromagnetic radiation is restricted to the resonant mode. Under magnetic dipole resonance conditions, the transmittance of the spherical silicon array is suppressed, high reflectivity is achieved over a wide frequency band, and light propagating laterally within the second semiconductor layer 15 and reaching the side surface B1 of the second semiconductor layer 15 is reflected. Mie resonance is a structural resonance at microwave frequencies.

[0325] For example, the radius of the spherical silicon is 60 nm, and the lattice constant is 150 nm. As shown in Figure 60, in the wavelength range of 380 nm to 500 nm, the reflectivity exceeds 90%, and it can effectively reflect light that propagates laterally within the second semiconductor layer 15 and reaches the side surface B1 of the second semiconductor layer 15.

[0326] For example, when manufacturing the initial light-emitting unit 120, in step S104 (shown in Figure 9), when forming the common electrode layer 16, the third portion S17a of the common electrode layer 16 and the first reflection pattern 40 are formed synchronously, as shown in Figure 49. After this, a nanolayer 32 made of semiconductor nanomaterial is formed to obtain the light-disturbing portion 17 and the second reflection pattern 45. For other steps in manufacturing the initial light-emitting unit 120, refer to the above description and will be omitted here.

[0327] The following provides another embodiment in which the light disturbance unit 17 is arranged.

[0328] In some embodiments, as shown in Figure 61, the color conversion unit 20 includes a defining dam layer 21, the defining dam layer 21 defines a plurality of aperture regions K, and in a first direction X, one light-emitting unit 11 corresponds to one aperture region K, and the first direction X is the direction in which the light-emitting unit 10 and the color conversion unit 20 are stacked.

[0329] The light disturbance section 17 is embedded in the second semiconductor layer 15, and in orthographic projection onto the reference plane A3, the light disturbance section 17 is arranged to surround the light-emitting layer 14 and is located within the range of the reference dam layer 21. The reference plane A3 is the plane on which the surface of the color conversion unit 20, away from the light-emitting unit 10, is located.

[0330] By arranging the light-disturbing portion 17 embedded in the second semiconductor layer 15, the light emitted from the light-emitting layer 14 propagates through the interior of the second semiconductor layer 15 and disrupts the optical path emitted from the side surface B1 of the second semiconductor layer 15.

[0331] In some embodiments, as shown in Figure 61, the light disturbance section 17 is located close to the boundary of the aperture region K.

[0332] In other words, in orthographic projection onto the reference plane A3, the light disturbance portion 17 is located close to the boundary of the aperture region K.

[0333] In some embodiments, as shown in Figure 62, the light disturbance section 17 is located close to the midline T of the defining dam layer 21 between two adjacent aperture regions K.

[0334] In other words, in orthographic projection onto the reference plane A3, the light disturbance section 17 is positioned close to the midline T of the defining dam layer 21 between two adjacent aperture regions K. Furthermore, the light disturbance section 17 is also provided on the midline T of the defining dam layer 21 located in the edge region of the light-emitting chip 100.

[0335] Then, as shown in Figures 61 and 62, the light disturbance portion 17 penetrates the second semiconductor layer 15 along a direction perpendicular to the reference plane A3.

[0336] The direction perpendicular to the reference plane A3 is parallel to the first direction X. Along the first direction X, the light disturbance portion 17 penetrates the second semiconductor layer 15.

[0337] It is understood that the light disturbance portion 17 is arranged in a ring shape in the second semiconductor layer 15 and is used to shield light propagating inside the second semiconductor layer 15, change the optical path of light propagating inside the second semiconductor layer 15, increase the light emission rate along the first surface A1 of the second semiconductor layer 15, and shield light leakage on the side surface B1 of the second semiconductor layer 15.

[0338] As shown in Figures 61 and 62, the light-emitting unit 10 further includes a common electrode layer 16, which may include a third portion S17a belonging to the common electrode layer 16 and a first reflection pattern 40 spaced apart from the light-emitting portion 11. For example, the material of the light-disturbing portion 17 is the same as the material of the common electrode layer 16, and the light-disturbing portion 17 is provided integrally with either the common electrode layer 16 or the first reflection pattern 40.

[0339] When the light disturbance section 17 is connected to the common electrode layer 16, the light disturbance section 17 and the third portion S17a of the common electrode layer 16 are an integrated structure.

[0340] Exemplary, as shown in Figures 61 and 62, the light disturbance section 17 is integrally provided with the first reflection pattern 40 or the third portion S17a of the common electrode layer 16, that is, the material of the light disturbance section 17 is the same as the material of the common electrode layer 16.

[0341] For example, when manufacturing the initial light-emitting unit 120, in step S102 (shown in Figure 9), when patterning the initial n-type gallium nitride layer 1560 and the initial gallium nitride buffer layer 1550, the material in the area through which the light-disturbing portion 17 is to be penetrated is removed, and then the second semiconductor layer 15 is formed. In step S104, when the common electrode layer 16 is formed, the third portion S17a of the common electrode layer 16, the first reflection pattern 40, and the light-disturbing portion 17 embedded in the second semiconductor layer 15 are formed synchronously.

[0342] The following provides another embodiment in which the light disturbance unit 17 is arranged.

[0343] In some embodiments, as shown in Figures 63 and 64, the second semiconductor layer 15 is provided with a second groove 33, the groove opening of the second groove 33 is located on the first surface A1 of the second semiconductor layer 15, and in orthographic projection onto a reference surface A3, the second groove 33 is located within the range of the reference dam layer 21. The light disturbance portion 17 includes a metal layer 34 covering the groove bottom and inner wall of the second groove 33, and / or scattering particles filled within the second groove 33. The reference surface A3 is a plane on which the surface of the color conversion unit 20 away from the light-emitting unit 10 is located.

[0344] The second groove 33 of the second semiconductor layer 15 is arranged in an annular shape, and the metal layer 34 can reflect light propagating inside the second semiconductor layer 15, thereby increasing the light emission rate on the first surface A1 of the second semiconductor layer 15 and shielding light leakage on the side surface B1 of the second semiconductor layer 15.

[0345] Exemplary, as shown in Figure 63, the material of the metal layer 34 in the second groove 33 may include lithium, gold, or silver.

[0346] Exemplary, as shown in Figure 64, the scattering particle material includes titanium dioxide. The size range of the scattering particles is 10 nm to 1000 nm. For example, the sizes of the scattering particles may be 10 nm, 50 nm, 100 nm, 200 nm, 500 nm, 750 nm, or 1000 nm, and this is not particularly limited herein.

[0347] Scattering particles are arranged in the second groove 33 of the second semiconductor layer 15, and the refractive index at the interface between the scattering particles and the second semiconductor layer 15 is non-uniform. This causes light scattering, and light with a large angle can be scattered into light with a small angle, thereby avoiding total internal reflection.

[0348] For example, when manufacturing the initial light-emitting unit 120, in step S108 (shown in Figure 9), after removing the second substrate 91, the second semiconductor layer 15 (a lamination of an n-type gallium nitride layer 156 and a gallium nitride buffer layer 155, or including a gallium nitride buffer layer 155; if the gallium nitride buffer layer 155 is absent, the second semiconductor layer 15 may be an n-type gallium nitride layer 156) is patterned to form a second groove 33. Then, a metal layer 34 is formed within the second groove 33 by a patterning process, or scattering particles are formed within the second groove 33 to obtain a light disturbance portion 17.

[0349] The following provides another embodiment in which the light disturbance unit 17 is arranged.

[0350] In some embodiments, as shown in Figure 65, the end of the regulating dam layer 21 closest to the light-emitting unit 10 extends into the second semiconductor layer 15 along a direction perpendicular to the reference plane A3, and the regulating dam layer 21 extending into the second semiconductor layer 15 is reused as a light disturbance section 17. The reference plane A3 is the plane on which the surface of the color conversion unit 20 away from the light-emitting unit 10 is located.

[0351] In other words, the regulating dam layer 21 penetrates the adhesive layer 41 and extends into the interior of the second semiconductor layer 15. The regulating dam layer 21 that reaches the interior of the second semiconductor layer 15 can block light propagating inside the second semiconductor layer 15, change the optical path of light propagating inside the second semiconductor layer 15, and block light leakage on the side surface B1 of the second semiconductor layer 15.

[0352] In some embodiments, as shown in Figure 66, the first surface A1 of the second semiconductor layer 15 has a recess 53 that conforms to the shape of the end of the regulating dam layer 21 closest to the light-emitting unit 10, and the end 21B of the regulating dam layer 21 closest to the light-emitting unit 10 fits into the recess 53.

[0353] As shown in Figure 66, the end portion 21B of the regulating dam layer 21 that is recessed into the recess 53 and close to the light-emitting unit 10 can block the light propagating inside the second semiconductor layer 15 and change the optical path of the light propagating inside the second semiconductor layer 15.

[0354] As shown in Figure 65, the light-emitting chip 100 further includes an adhesive layer 41 for connecting the light-emitting unit 10 and the color conversion unit 20. The color conversion unit 20 further includes an optical function part 22 provided in the opening region K of the defining dam layer 21, and a layer for sealing the optical function part 22 and the defining dam layer 21. The end 21B of the defining dam layer 21 closest to the light-emitting unit 10 penetrates the adhesive layer 41, and a portion of the sealing layer 26 extends into the recess 53 and encloses the end 21B that enters the recess 53 of the defining dam layer 21.

[0355] For example, when manufacturing the initial light-emitting unit 120, in step S108 (shown in Figure 9), after removing the second substrate 91, a recess 53 is formed on the first surface A1 of the second semiconductor layer 15 by a photolithography process. After this, an adhesive for forming the adhesive layer 41 is coated onto the first surface A1 of the second semiconductor layer 15. Next, the light-emitting unit 10 and the color conversion unit 20 are aligned and bonded together, forming a structure in which the end 21B of the regulating dam layer 21 closest to the light-emitting unit 10 fits into the recess 53 of the second semiconductor layer 15. Finally, the temporary substrate 70 is peeled off to form the light-emitting chip 100.

[0356] By enclosing the end portion 21B that extends into the recess 53 of the standard dam layer 21, the sealing layer 26 can effectively prevent light leakage from the optical functional portion 22 in the region of the end portion 21B of the standard dam layer 21, thereby improving the sealing effect.

[0357] The following provides another embodiment in which the light disturbance unit 17 is arranged.

[0358] In some embodiments, as shown in Figure 67, the second semiconductor layer 15 includes a plurality of spaced semiconductor portions 15A, where, in orthographic projection onto a reference plane A3, one semiconductor portion 15A covers at least one light-emitting portion 11. The light-disturbing portion 17 includes a light extraction structure located on the first surface A1 of the second semiconductor layer 15. The reference plane A3 is the plane on which the surface of the color conversion unit 20, away from the light-emitting unit 10, is located.

[0359] Exemplary, as shown in Figure 67, the light extraction structure includes a plurality of projections 35 arranged in an array, where the projections 35 are triangular prisms or trapezoidal prisms.

[0360] In other words, by dividing and arranging the second semiconductor layer 15, which is provided throughout the entire layer, the optical waveguide that would be created if the second semiconductor layer 15 were provided throughout the entire layer is blocked. Then, as shown in Figure 67, all surfaces of the second semiconductor layer 15 except the first surface A1 are covered with the common electrode layer 16 to block light leakage from the sides of the second semiconductor layer 15.

[0361] By providing multiple protrusions 35, the waveguide interface of the second semiconductor layer 15 is blocked, allowing light that was previously confined within the waveguide to propagate upward, thereby improving the light extraction efficiency of the light-emitting chip 100.

[0362] For example, as shown in Figure 67, the light extraction structure may be provided throughout the entire layer in the plane where the first surface A1 of the second semiconductor layer 15 is located; that is, the light extraction structure is also located in the region between adjacent semiconductor portions 15A. A light extraction structure provided throughout the entire layer does not require patterning and facilitates the manufacturing of the light extraction structure.

[0363] In some examples, as shown in Figure 68, each of the multiple protrusions 35 is a triangular prism or a trapezoidal prism, and the base angle θ of the protrusion 35 is 50.9°. Here, the base angle θ of the protrusion 35 is the angle between the protrusion 35 and the first surface A1 of the second semiconductor layer 15.

[0364] For example, the structure of the projection 35 shown in Figure 68 is a triangular prism. For instance, the base diameter d22 of the triangular prism is 2.6 μm, and the height d23 of the triangular prism is 1.6 μm.

[0365] For example, a light extraction structure is fabricated using a photolithography process.

[0366] Exemplary, as shown in Figure 68, the shortest distance d21 in the second direction Y between two adjacent protrusions 35 of the plurality of protrusions 35 is 3 μm, and the second direction Y is perpendicular to the first direction X.

[0367] By arranging the light extraction structure, the light propagating upward and incident on the color conversion unit 20 can be expanded from light L1 (shown in Figure 47) with an angle of less than 39.5° to light with an angle of more than 11.4°, thereby improving the range of emission angles and increasing the light utilization rate of the light-emitting chip 100. Furthermore, by dividing and arranging the second semiconductor layer 15, which is provided in all layers, and by arranging the light extraction structure, crosstalk between pixels of multiple light-emitting units 11 can be blocked, reducing the risk of color shift.

[0368] The following provides another embodiment in which the light disturbance unit 17 is arranged.

[0369] In some embodiments, as shown in Figure 69, the light-emitting unit 11 further includes a first electrode 12 electrically connected to the light-emitting layer 14 and a common electrode layer 16, and is arranged on the second surface A2 of the second semiconductor layer 15. The light-disturbing unit 17 further includes a projection ring 36 provided on the second surface A2 of the second semiconductor layer 15, and in orthographic projection onto the reference plane A3, the projection ring 36 is provided so as to surround the first electrode 12 and the common electrode layer 16. The reference plane A3 is a plane on which the surface of the color conversion unit 20 away from the light-emitting unit 10 is located.

[0370] For example, the protruding ring 36 and the second semiconductor layer 15 are integrated into a single structure.

[0371] The protruding ring 36 and the second semiconductor layer 15 are an integrated structure; in other words, the second semiconductor layer 15 has a different thickness.

[0372] For example, when manufacturing the initial light-emitting unit 120, in step S101 (shown in Figure 9), first, an initial gallium nitride buffer layer 1550 and an initial n-type gallium nitride layer 1560 are sequentially formed on one side of the second substrate 91. Next, the initial gallium nitride buffer layer 1550 and the initial n-type gallium nitride layer 1560 are patterned, and the thickness of the n-type gallium nitride layer 156 and gallium nitride buffer layer 155 provided in the region where the first electrode 12 and common electrode layer 16 are pre-formed is relatively thin. After that, the initial quantum well layer 1210 and the initial p-type gallium nitride layer 1220 are deposited. For other steps in manufacturing the initial light-emitting unit 120, refer to the above description, and will not be explained here.

[0373] By setting different regions of the second semiconductor layer 15 to different thicknesses, the optical waveguide effect of the second semiconductor layer 15 can be effectively attenuated, and light leakage on the side surface B1 of the second semiconductor layer 15 can be reduced.

[0374] The following provides another embodiment in which the light disturbance unit 17 is arranged.

[0375] In some embodiments, as shown in Figure 70, the light disturbance section 17 includes multiple rows of grating stripes 37 spaced apart on the first surface A1 of the second semiconductor layer 15, and in orthographic projection onto a reference plane A3, the multiple rows of grating stripes 37 are arranged to surround the light-emitting layer 14. The reference plane A3 is the plane on which the surface of the color conversion unit 20 away from the light-emitting unit 10 is located.

[0376] In other words, grating stripes 37 are arranged in the surrounding area of ​​multiple light-emitting units 11.

[0377] For example, the material of grating stripe 37 may include silicon dioxide, titanium dioxide, or silicon nitride.

[0378] Exemplary, as shown in Figure 71, the size range of the width d24 of the grating stripe 37 is 50 nm to 500 nm. The range of the spacing d25 between adjacent grating stripes 37 is 50 nm to 1000 nm. For example, the width d24 of the grating stripe 37 may be 50 nm, 100 nm, 150 nm, 200 nm, 250 nm, or 500 nm, and is not particularly limited herein. The spacing d25 between adjacent grating stripes 37 may be 50 nm, 100 nm, 200 nm, 300 nm, 800 nm, or 1000 nm, and is not particularly limited herein.

[0379] The grating stripe 37, positioned on the first surface A1 of the second semiconductor layer 15, can diffract light, preventing total internal reflection of light within the second semiconductor layer 15, thereby improving the light emission rate on the first surface A1 of the second semiconductor layer 15.

[0380] For example, when manufacturing the initial light-emitting unit 120, in step S108 (shown in Figure 9), after removing the second substrate 91, a grating stripe 37 is formed on the first surface A1 of the second semiconductor layer 15 by a patterning process. Other steps for manufacturing the initial light-emitting unit 120 can be found in the above description and are omitted here.

[0381] The following provides another embodiment in which the light disturbance unit 17 is arranged.

[0382] In some embodiments, as shown in Figure 72, the light-emitting chip 100 further includes an adhesive layer 41, which is placed between the light-emitting unit 10 and the color conversion unit 20 and used to connect the light-emitting unit 10 and the color conversion unit 20. The light-disturbing portion 17 includes scattering particles dispersed within the adhesive layer 41.

[0383] Exemplary, the scattering particle material includes titanium dioxide. The size range of the scattering particles is 10 nm to 1000 nm. For example, the sizes of the scattering particles may be 10 nm, 50 nm, 100 nm, 200 nm, 500 nm, 750 nm, or 1000 nm, and this is not particularly limited herein.

[0384] By dispersing scattering particles within the adhesive layer 41, the refractive index at the interface between the second semiconductor layer 15 and the adhesive layer 41 becomes non-uniform, which causes light scattering and effectively prevents total internal reflection at the interface between the second semiconductor layer 15 and the adhesive layer 41.

[0385] For example, if, after forming the initial light-emitting unit 120 and the color conversion unit 20, the color conversion unit 20 and the initial light-emitting unit 120 are aligned and bonded by an adhesive layer 41 formed by the adhesive layer 133, in step P301 (shown in Figure 37), if the adhesive layer 133 is coated on the side of the initial light-emitting unit 120 away from the temporary substrate 70, scattering particles are dispersed in the adhesive layer 133, scattering particles are formed within the adhesive layer 41, and a light disturbance portion 17 is obtained. For the steps of manufacturing the initial light-emitting unit 120 and the color conversion unit 20, and for other steps of aligning and bonding the color conversion unit 20 and the initial light-emitting unit 120, refer to the above description and will be omitted here.

[0386] The following provides another embodiment in which the light disturbance unit 17 is arranged.

[0387] In some embodiments, as shown in Figure 73, the light-emitting chip 100 further includes an adhesive layer 41, which is positioned between the light-emitting unit 10 and the color conversion unit 20 and used to connect the light-emitting unit 10 and the color conversion unit 20. The light-disturbing section 17 includes multiple layers of light-guiding films 38 sequentially stacked on the side of the adhesive layer 41 closer to the light-emitting unit 10, and the refractive index of the multiple layers of light-guiding films 38 sequentially decreases along a first direction X from the light-emitting unit 10 toward the color conversion unit 20.

[0388] Because the difference in refractive index between the second semiconductor layer 15 and the adhesive layer 41 is large, light propagates laterally within the second semiconductor layer 15, forming an optical waveguide. Therefore, the optical waveguide effect of the second semiconductor layer 15 is destroyed by using multiple layers of optical guide films 38 with gradually changing refractive indices.

[0389] For example, when manufacturing the initial light-emitting unit 120, in step S108 (shown in Figure 9), after removing the second substrate 91, multiple light-guiding films 38 are formed on the first surface A1 of the second semiconductor layer 15 by a patterning process. Other steps for manufacturing the initial light-emitting unit 120 can be found in the above description and are omitted here.

[0390] The following explains the design principle of the refractive index of the light guide film 38.

[0391] As shown in Figure 74, the first normal f1 is divided into a first normal f11 and a second normal f12. The normal on the side surface B1 of the second semiconductor layer 15 is the first normal f11, and the normals on the first surface A1 and the second surface A2 of the second semiconductor layer 15 are the second normal f12. It can be understood that the second normal f12 is parallel to the first direction X.

[0392] As can be seen from the above analysis of light leakage W1 (shown in Figure 47) and light leakage W2 (shown in Figure 48), the critical angle α2 at which total internal reflection occurs between the second semiconductor layer 15 and air is 24°. In other words, at the side surface B1 of the second semiconductor layer 15, light with an angle of less than 24° with the first normal f11 is emitted, forming light L3 (shown in Figure 47), and light leakage due to light L3 causes color shift.

[0393] As shown in Figure 74, the cross-section of the second semiconductor layer 15 is trapezoidal, meaning that the angle γ between the side surface B1 of the second semiconductor layer 15 and the first direction X is, for example, 75°.

[0394] As shown in Figure 74, at the first surface A1 of the second semiconductor layer 15, the angle between light L4 and the second normal f12 is 51°. After light L4 is reflected by the first surface A1 of the second semiconductor layer 15, light is formed that has an angle of 24° with the first normal f11 on the side surface B1 of the second semiconductor layer 15. At the first surface A1 of the second semiconductor layer 15, after light with an angle of 51° or more with the second normal f12 is reflected by the first surface A1 of the second semiconductor layer 15, light is formed that has an angle of 24° or less with the first normal f11 on the side surface B1 of the second semiconductor layer 15. Light with an angle of 24° or less with the first normal f11 on the side surface B1 of the second semiconductor layer 15 is emitted from the side surface B1 of the second semiconductor layer 15, forming light L3 (shown in Figure 47). Therefore, at the first surface A1 of the second semiconductor layer 15, light that makes an angle of 51° or more with the second normal f12 is reflected by the first surface A1 of the second semiconductor layer 15 and then emitted from the side surface B1 of the second semiconductor layer 15.

[0395] As shown in Figure 74, on the second surface A2 of the second semiconductor layer 15, the angle between light L5 and the second normal f12 is 81°. After light L5 is reflected by the second surface A2 of the second semiconductor layer 15, light is formed that has an angle of 24° with the first normal f11 on the side surface B1 of the second semiconductor layer 15. On the second surface A2 of the second semiconductor layer 15, after light with an angle of 81° or more with the second normal f12 is reflected by the second surface A2 of the second semiconductor layer 15, light with an angle of 24° or less with the first normal f11 on the side surface B1 of the second semiconductor layer 15 is formed. Light with an angle of 24° or less with the first normal f11 on the side surface B1 of the second semiconductor layer 15 is emitted from the side surface B1 of the second semiconductor layer 15, forming light L3 (shown in Figure 47).

[0396] Therefore, as can be seen from the path diagrams of light L4 and light L5 shown in Figure 74 and the data in Table 1, light with an angle of 51° to 81° with respect to the first direction X in the second semiconductor layer 15 is emitted from the side surface B1 of the second semiconductor layer 15, and the angle δ at which it is emitted into the air is 15° to 195°, meaning that the side surface B1 of the second semiconductor layer 15 has a 180° fan-shaped light-emitting surface.

[0397] From the data in Table 1, we can see the light leakage rate of light in the second semiconductor layer 15 when the angle with the first direction X is between 51° and 85°. Here, △x and △y are deviation values ​​from the color group table. To prevent color shift due to light leakage, the chromaticity coordinate calculation criterion is to block all light that can be emitted from the air, and the △x and △y of the blocked area are calculated with the criteria of △x ≤ 0.05 and △y ≤ 0.05.

[0398] As can be seen from the light leakage rate, light leakage also occurs for light with an angle of 85° with the first direction X in the second semiconductor layer 15. In other words, if only the emission of light with an angle of 51° to 81° with the first direction X in the second semiconductor layer 15 is shielded, light leakage will still occur. Therefore, it is necessary to shield the emission of light with an angle of 85° or less with the first direction X in the second semiconductor layer 15. [Table 1]

[0399] The calculation based on the critical angle of adjacent interfaces is as follows: 2.45 × sin85° = n2 × sin90° → n2 = 2.44067, 2.44067 × sin85° = n3 × sin90° → n3 = 2.43147, 2.43147 × sin85° = n4 × sin90° → n4 = 2.4221. Estimating in this way, the objective that all light within 85° propagates upward can be satisfied only when the difference in refractive index between the two adjacent layers of light guide films 38 reaches 0.01, and the problem of light leakage from the sidewalls of the optical waveguide of the second semiconductor layer 15 can be solved.

[0400] Therefore, in the multi-layer light guide film 38, the difference in refractive index between two adjacent light guide films 38 is 0.01 or greater.

[0401] According to the calculation, (2.45 - 1.56) = 0.89 / 0.01 = 89 layers. Therefore, if 89 layers of the light-guiding film 38 with a changing refractive index are provided, a gradual change in refractive index from 2.45 to 1.56 can be achieved without color shift or light leakage.

[0402] In some examples, as shown in Figure 73, the thickness range of each layer of the light guide film 38 is 20 nm to 50 nm, and the total thickness d26 of the multiple layers of light guide films 38 is in the range of 2 μm to 4 μm.

[0403] For example, the thickness of the light guide film 38 in each layer may be 20 nm, 30 nm, 35 nm, 40 nm, 45 nm, or 50 nm, and this is not particularly limited in this specification.

[0404] For example, the total thickness d6 of the multiple layers of light guide film 38 may be 2 μm, 3 μm, or 4 μm, and is not particularly limited herein.

[0405] In some examples, the material of the light guide film 38 contains silicon dioxide.

[0406] Furthermore, the refractive index of the light guide film 38 changes in accordance with the change in porosity, and the refractive index decreases as the porosity increases. Therefore, if the porosity of the light guide film 38 can be controlled to change linearly, the refractive index will change gradually accordingly, and a light guide film 38 with a gradually changing refractive index can be manufactured.

[0407] For example, polyethylene glycol molecules are added to an acid catalyst gel to produce a light-guiding film 38 whose refractive index gradually changes by utilizing the water solubility of polyethylene glycol. In silica gel, the polyethylene glycol exists through simple physical dissolution. When the film layer is immersed in water, the outside of the film layer comes into sufficient contact with water, and the polyethylene glycol in the film layer dissolves and precipitates sufficiently. The closer to the inside of the film layer, the narrower the passage for polyethylene glycol to dissolve and precipitate, and the smaller the pores remaining after precipitation. As a result, the porosity gradually increases from the inside to the outside, and a silica gel material is obtained in which the refractive index gradually changes, with the refractive index gradually decreasing. Silica gel materials with different refractive indices are obtained layer by layer, and multiple layers of polyethylene glycol with a gradually changing refractive index are produced using a TFE (thin film encapsulation)-CVD (chemical vapor deposition) process.

[0408] In related technologies, as shown in Figure 75, the refractive index of air is 1.0, and the refractive index of the first substrate 30 is 1.5. Because the difference between the refractive index of the first substrate 30 and the refractive index of air is large, total internal reflection occurs at the interface between the first substrate 30 and the air. The normal perpendicular to the first substrate 30 is called the second normal f2. Light whose angle with the second normal f2 is less than the critical angle α3 is emitted from the first substrate 30 into the air, while light whose angle with the second normal f2 is greater than or equal to the critical angle α3 is totally internally reflected at the first substrate 30.

[0409] The critical angle α3 at which total internal reflection occurs between the first substrate 30 and the air is calculated using the following formula. sinα3 × 1.5 = sin90° × 1.0

[0410] Therefore, α3 is 41.8°.

[0411] In other words, as shown in Figure 75, light with an angle of less than 41.8° with the second normal f2 is emitted from the first substrate 30 into the air, and light with an angle of 41.8° or more with the second normal f2 is totally reflected by the first substrate 30, forming light leakage W3 at the edge of the first substrate 30.

[0412] The light leakage W1 (shown in Figure 47), light leakage W2 (shown in Figure 48), and light leakage W3 described above reduce the light emission efficiency of the display substrate 200, and thus reduce the display effect of the display substrate 200. The following embodiment improves the problem of light leakage at the edge of the first substrate 30.

[0413] In some embodiments, as shown in Figures 76 and 77, the light-emitting chip 100 further includes a first substrate 30, the first substrate 30 being positioned on the side of the color conversion unit 20 away from the light-emitting unit 10. The first substrate 30 includes a first portion E1 and a second portion E2 surrounding the first portion E1, the first portion E1 overlapping with the color conversion unit 20 and the second portion E2 not overlapping with the color conversion unit 20. The light-emitting chip 100 further includes a light-shielding portion 90, the light-shielding portion 90 being positioned on the surface of the second portion E2 close to the color conversion unit 20 or on the surface away from the color conversion unit 20.

[0414] As shown in Figure 8, the wafer 300 includes a plurality of light-emitting chips 100 arranged in an array, and a single light-emitting chip 100 is formed by dicing the wafer 300. Therefore, a dicing street J is provided on the first substrate 30 of the wafer 300, and the dicing street J is located between the array of light-emitting chips 100, and a light-emitting chip 100 is formed by dicing the first substrate 30 in the dicing street J. It can be understood that the second portion E2 of the first substrate 30 partially overlaps with the dicing street J of the first substrate 30.

[0415] By arranging the light-shielding portion 90 on the first substrate 30 of the second portion E2, light leakage W1, light leakage W2, and light leakage W3 can be absorbed or reflected, thereby improving the light leakage problem on the side B2 of the first substrate 30.

[0416] In some examples, as shown in Figure 76, the light-shielding portion 90 is located on the surface close to the color conversion unit 20 of the second portion E2, and the material of the light-shielding portion 90 includes a metal for reflecting light emitted from the side B1 of the second semiconductor layer 15.

[0417] For example, the light-shielding portion 90 is formed by a deposition method.

[0418] For example, when manufacturing the color conversion unit 20, in step R203 (shown in Figure 26), after forming the sealing layer 26, a light-shielding portion 90 is formed by a patterning process on the side of the dicing street J region of the initial first substrate 310 that is adjacent to the optical functional portion 22.

[0419] As shown in Figures 47, 48, and 76, by placing a light-shielding portion 90 on the surface of the second portion E2 of the first substrate 30 adjacent to the color conversion unit 20, the light-shielding portion 90 shields light leakage W1 and light leakage W2, reflects light L3 into the interior of the light-emitting chip 100, and ensures that light is emitted only through the color conversion unit 20, thereby improving the light extraction efficiency of the light-emitting chip 100.

[0420] In some examples, as shown in Figure 77, the light-shielding portion 90 is located on a surface of the first substrate 30 that is away from the color conversion unit 20.

[0421] For example, in the step of forming the light-emitting chip 100 by aligning and bonding the color conversion unit 20 and the initial light-emitting unit 120 with an adhesive layer 41 formed by an adhesive layer 133, in step P304 (shown in Figure 36), the initial first substrate 310 is thinned to form the first substrate 30, and then a light-shielding portion 90 is formed on the side of the dicing street J region of the first substrate 30 away from the optical functional portion 22 by a patterning process.

[0422] The material of the light-shielding portion 90 includes black resin, amorphous silicon, or titanium dioxide, and is used to absorb light emitted from the side of the second semiconductor layer 15 after it has exited the second portion E2, and to absorb light emitted from the light-emitting layer 14 after it has propagated inside the first substrate 30 and exited from the side B2 of the first substrate 30.

[0423] Therefore, the black resin, amorphous silicon, and titanium dioxide are light-absorbing materials, and by providing the light-absorbing materials around the second portion E2, light leakage W1, light leakage W2, and light leakage W3 can be absorbed, improving the light emission efficiency of the display substrate 200 and enhancing the display effect of the display substrate 200.

[0424] The above embodiment schematically describes an example in which a second groove 33 is provided in the second semiconductor layer 15, and the opening of the second groove 33 is located on the first surface A1 of the second semiconductor layer 15. In other feasible embodiments, referring to Figures 61, 62, 78, 79 and 80, Figure 78 is a bottom view of a light-emitting chip according to another embodiment of this application, Figure 79 is a plan view of the light-emitting unit shown in Figure 78, and Figure 80 is a cross-sectional view of the light-emitting chip at position LL shown in Figures 78 and 79. The second semiconductor layer 15 may include a first groove U that opens on the second surface A2. That is, the opening of the first groove U provided in the second semiconductor layer 15 is located on the second surface A2 of the second semiconductor layer 15.

[0425] Here, the first groove U is located at least between the orthographic projections of two adjacent light-emitting layers 14 among the plurality of light-emitting sections 11 on the extending surface of the second semiconductor layer 15. Here, the extending surface of the second semiconductor layer 15 may be the extending surface of the first surface A1 of the second semiconductor layer 15, or it may be the extending surface of the second surface A2 of the second semiconductor layer 15.

[0426] In the embodiments of this application, as shown in Figure 80, the light-emitting chip 100 may further include a filler portion 50 located within the first groove U. Here, the filler portion 50 may be made of an opaque material. In one feasible embodiment, the opaque material herein may be a metallic material, for example, one or more metallic materials such as copper, aluminum, gold, silver, molybdenum, titanium, and chromium. In another feasible embodiment, the opaque material may be an opaque organic material, for example, a light-shielding resin, or a gel material doped with a light-absorbing dye (e.g., carbon black).

[0427] Preferably, the filling portion 50 includes a metal layer closest to the first groove U, and the material of the metal layer is gold or silver, thereby increasing the reflection of light by the filling portion 50 and improving the utilization rate of light emitted from the light-emitting portion. Specifically, the metal layer may be part of the common electrode layer 16.

[0428] In the embodiments of this application, it can be understood that the filling portion 50 is the light disturbance portion 17.

[0429] In the embodiment of this application, the light emitted from the light-emitting part 11 of the light-emitting unit 10 first passes through the second semiconductor layer 15, and then sequentially passes through the color conversion unit 20 before being emitted. Because there is a difference in the refractive index of the medium between each layer, some of the light irradiated into the interior of the second semiconductor layer 15 propagates along the direction of extension of the second semiconductor layer 15, and the light that propagates to the region where the adjacent light-emitting part 11 is located passes through the color conversion unit 20 and is emitted, causing an abnormality in the color display of the light-emitting chip 100.

[0430] For example, if there are multiple light-emitting units 11, the second semiconductor layer 15 is a planar structure provided throughout the entire layer, and therefore, a portion of the light irradiated into the interior of the second semiconductor layer 15 is highly likely to cause optical waveguide phenomena within the second semiconductor layer 15. For example, a portion of the light incident from the light-emitting unit 11 in the light-emitting unit 10 onto the second semiconductor layer 15 can undergo total internal reflection multiple times between the first surface A1 and the second surface A2 of the second semiconductor layer 15 and propagate laterally. As a result, light emitted from one light-emitting unit 11 is likely to propagate laterally to the region where an adjacent light-emitting unit 11 is located, and if subsequently emitted from the optical function unit 22 corresponding to the adjacent light-emitting unit 11, it will cause abnormal color display of the light-emitting chip 100.

[0431] Therefore, in this application, a first groove U opening on the second surface A2 can be provided in the second semiconductor layer 15 of the light-emitting unit 10, and the filling portion 50 can be located within the first groove U. In this way, after a portion of the light emitted from the light-emitting portion 11 propagates laterally through the second semiconductor layer 15, the filling portion 50 located within the first groove U can block the light that has propagated to the region where the adjacent light-emitting portion 11 is located. In this way, the probability that a portion of the light emitted from the light-emitting portion 11 propagates laterally through the second semiconductor layer 15 and reaches the region where the adjacent light-emitting portion 11 is located can be effectively reduced, thereby ensuring that optical crosstalk is less likely to occur within the light-emitting chip 100, and consequently, the display effect of the display substrate on which such light-emitting chips 100 are integrated can be improved.

[0432] As described above, the light-emitting chip according to the embodiment of this application includes a light-emitting unit and a color conversion unit disposed on the light-emitting side of the light-emitting unit. A first groove opening on a second surface can be provided in the second semiconductor layer of the light-emitting unit, and a filler portion can be located within the first groove. In this way, after a portion of the light emitted from the light-emitting unit propagates laterally through the second semiconductor layer, the filler portion located in the first groove can shield the light that has propagated to the region where an adjacent light-emitting unit is located. As a result, the probability that a portion of the light emitted from the light-emitting unit propagates laterally through the second semiconductor layer and reaches the region where an adjacent light-emitting unit is located can be effectively reduced, thereby ensuring that optical crosstalk is less likely to occur within the light-emitting chip, and consequently, the display effect of a display substrate on which such a light-emitting chip is integrated can be improved.

[0433] In this application, the filling portion 50 may be part of the common electrode layer 16. Here, since the common electrode layer 16 is made of a reflective material, if the filling portion 50 located in the first groove U belongs to a part of the common electrode layer 16, the filling portion 50 may also be reflective, and thereby the filling portion 50 can shield the light that propagates laterally within the second semiconductor layer 15 from the light-emitting portion 11.

[0434] In the embodiments of this application, as shown in Figure 80, the first groove U can be located within the orthographic projection of the extending surface of the second semiconductor layer 15 of the common electrode layer 16. That is, the orthographic projection of the extending surface of the second semiconductor layer 15 of the common electrode layer 16 can cover the orthographic projection of the first groove U on the extending surface of the second semiconductor layer 15. In this way, the filling portion 16 filled into the first groove U in the common electrode layer 16 can completely cover the first groove U.

[0435] One option is that the side of the common electrode layer 16 opposite the color conversion unit 20 is a flat surface.

[0436] As one option, referring to Figure 81, which is a partially enlarged view of the distribution of the second semiconductor layer and the common electrode layer according to an embodiment of this application. In some embodiments, the common electrode layer 16 has a groove U0 on the side away from the color conversion unit 20, and the orthographic projection of the groove U0 on the extending surface of the second semiconductor layer 15 overlaps with the first groove U.

[0437] For example, the orthographic projection of the second semiconductor layer 15 on the extension surface of the groove U0 is located inside the first recess U.

[0438] For example, at least a portion of the groove U0 is located inside the first recess U.

[0439] For example, the groove U0 and the first recessed groove U are in a fitted state, and the groove U0 is fitted into the first recessed groove U.

[0440] For example, the common electrode layer 16 can be formed using a uniform film deposition process. In this case, the thickness of the common electrode layer 16 formed on the second semiconductor layer 15 is the same or nearly the same at each location, or the thickness of the common electrode layer 16 inside the first groove U is greater than the thickness of the common electrode layer 16 outside the first groove U.

[0441] For example, the thickness of each part of the common electrode layer 16 may all be 500 nanometers or more.

[0442] For example, the thickness of the filling portion 50 located within the first groove U in the common electrode layer 16 matches the thickness of the portion located outside the first groove U in the common electrode layer 16. A recessed groove U0 can be formed on the side of the filling portion 50 located within the first groove U in the common electrode layer 16 that is away from the color conversion unit 20. This recessed groove U0 may be obtained by being provided on the groove wall of the first groove U and surrounded by a filling portion 50 of the same thickness. Therefore, this recessed groove U0 can be distributed within the first groove U.

[0443] In this application, the portion of the common electrode layer 16 located inside the first groove U and the portion located outside the first groove U are a continuous, integrated structure. In one feasible embodiment, the common electrode layer 16 may be a single conductive layer, and the material in each part of the single conductive layer is the same. In another feasible embodiment, the common electrode layer 16 may be a plurality of stacked subconductive layers, and each subconductive layer extends continuously from the inside to the outside of the first groove U.

[0444] As one option, the depth of the first groove U in the second semiconductor layer 15 may be less than or equal to the thickness of the second semiconductor layer 15.

[0445] As an example, as shown in Figure 82, Figure 82 is a schematic diagram of the structure of a second semiconductor layer according to an embodiment of this application. The ratio of the depth h1 of the first groove U in the second semiconductor layer 15 to the thickness h0 of the second semiconductor layer can be in the range of 10% to 65%. The deeper the first groove U in the second semiconductor layer 15, the better the shielding effect of the filling portion 50 filled in the first groove U against light that propagates laterally within the second semiconductor layer 15 from the light-emitting portion 11.

[0446] Accordingly, the ratio of the distance h2 between the bottom of the first groove U in the first direction X and the first surface A1 of the second semiconductor layer 15 to the thickness h0 of the second semiconductor layer 15 can be in the range of 35% to 90%. In this way, even if the first groove U is provided in the second semiconductor layer 15, it is possible to guarantee that the overall strength of the second semiconductor layer 15 is strong, and consequently, it is possible to guarantee that the first groove U does not affect the overall strength of the light-emitting chip 100, thereby reducing the risk of cracking in the light-emitting chip 100 and ensuring high stability of the light-emitting chip 100.

[0447] For example, the ratio of the depth h1 of the first groove U in the second semiconductor layer 15 to the thickness h0 of the second semiconductor layer can be in the range of 12% to 60%. Correspondingly, the ratio of the distance h2 between the bottom of the first groove U and the first surface A1 of the second semiconductor layer 15 in the first direction X to the thickness h0 of the second semiconductor layer 15 can be in the range of 40% to 88%.

[0448] For example, the ratio of the depth h1 of the first groove U in the second semiconductor layer 15 to the thickness h0 of the second semiconductor layer can be in the range of 15% to 55%. Correspondingly, the ratio of the distance h2 between the bottom of the first groove U and the first surface A1 of the second semiconductor layer 15 in the first direction X to the thickness h0 of the second semiconductor layer 15 can be in the range of 45% to 85%.

[0449] For example, the ratio of the depth h1 of the first groove U in the second semiconductor layer 15 to the thickness h0 of the second semiconductor layer can be in the range of 20% to 50%. Correspondingly, the ratio of the distance h2 between the bottom of the first groove U in the first direction X and the first surface A1 of the second semiconductor layer 15 to the thickness h0 of the second semiconductor layer 15 can be in the range of 50% to 80%. In such a case, not only can the overall strength of the second semiconductor layer 15 be guaranteed, but the shielding effect of the filling portion 50 filled in the first groove against light that propagates laterally within the second semiconductor layer 15 from the light-emitting portion 11 can be more effectively ensured.

[0450] In one exemplary embodiment, the depth h1 of the first groove U in the second semiconductor layer 15 can be in the range of 0.1 micrometers to 3 micrometers. Preferably, the depth h1 of the first groove U in the second semiconductor layer 15 can be in the range of 0.5 micrometers to 1.5 micrometers. In this case, the thickness h0 of the second semiconductor layer may be 4.6 (±0.5) micrometers. Correspondingly, the distance h2 between the bottom of the first groove U in the first direction X and the first surface A1 of the second semiconductor layer 15 can be in the range of 1.1 micrometers to 5 micrometers. Preferably, the distance h2 between the bottom of the first groove U in the first direction X and the first surface A1 of the second semiconductor layer 15 can be in the range of 2.6 micrometers to 4.6 micrometers.

[0451] In the embodiments of this application, as shown in Figure 82, the second semiconductor layer 15 includes a stacked first sublayer 15a and a second sublayer 15b, the first sublayer 15a being close to the light-emitting portion 11 by the second sublayer 15b. Here, the first sublayer 15a is the n-type gallium nitride layer 156 in the above embodiment, and the second sublayer is the gallium nitride buffer layer 155 in the above embodiment.

[0452] Here, the second semiconductor layer 15 can include the stacked first sublayer 15a and the second sublayer 15b, and therefore the distribution morphology of the first groove U within the second semiconductor layer 15 is also different. For this reason, the embodiments of this application will be schematically explained using the following four embodiments as examples.

[0453] As a first embodiment, as shown in Figure 82, the first groove U may include a first blind groove U1 provided on the side of the first sublayer 15a away from the second sublayer 15b. Here, the filling portion 50 can be filled into this first blind groove U1.

[0454] Referring to Figure 83 as a second embodiment, Figure 83 is a schematic diagram of the structure of another second semiconductor layer according to an embodiment of the present application. The first groove U may include a first through groove U2 that penetrates the first sublayer 15a. Here, the filler portion 50 can be filled into this first through groove U2.

[0455] Referring to Figure 84 as a third embodiment, Figure 84 is a schematic diagram of yet another second semiconductor layer structure according to an embodiment of the present application. The first groove U may include a first through groove U2 penetrating the first sublayer 15a and a second blind groove U3 provided on the side of the second sublayer 15b facing the first sublayer, and the first through groove U2 may communicate with the second blind groove U3. Here, a portion of the filling portion 50 may be filled into the first through groove U2, and another portion of the filling portion 50 may be filled into the second blind groove U3.

[0456] Referring to Figure 85 as a fourth embodiment, Figure 85 is a schematic diagram of yet another second semiconductor layer structure according to an embodiment of the present application. The first groove U may include a first through groove U2 penetrating the first sublayer 15a and a second through groove U4 penetrating the second sublayer 15b, and the first through groove U2 may communicate with the second through groove U4. Here, a portion of the filling portion 50 may be filled into the first through groove U2, and another portion of the filling portion 50 may be filled into the second through groove U4.

[0457] In the first, second, and third embodiments described above, the first groove U is a blind groove that does not completely penetrate the entire second semiconductor layer 15, while in the fourth embodiment described above, the first groove U is a through groove that completely penetrates the entire second semiconductor layer 15.

[0458] In embodiments of this application, referring to Figure 78, the first groove U in the second semiconductor layer 15 may include a first groove portion U11 and a second groove portion U12. Here, the first groove portion U11 in the first groove U may be located between the orthographic projection of the first light-emitting portion 12a on the extending surface of the second semiconductor layer 15 and the orthographic projection of the second light-emitting portion 12b on the extending surface of the second semiconductor layer 15, and the second groove portion U12 in the first groove U may be located between the orthographic projection of the first light-emitting portion 12a on the second semiconductor layer 15 and the orthographic projection of the third light-emitting portion 12c on the second semiconductor layer 15.

[0459] In such cases, the filling portion 50 located within the first groove U11 can shield the light emitted from the first light-emitting portion 12a and the second light-emitting portion 12b that propagates laterally along the second direction Y within the second semiconductor layer 15. In this way, optical crosstalk between the first light-emitting portion 12a and the second light-emitting portion 12b can be reduced or avoided, thereby reducing the risk of color shift. Similarly, the filling portion 50 located within the second groove U12 can shield the light emitted from the first light-emitting portion 12a and the third light-emitting portion 12c that propagates laterally along the third direction Z within the second semiconductor layer 15. In this way, optical crosstalk between the first light-emitting portion 12a and the third light-emitting portion 12c can be reduced or avoided, thereby reducing the risk of color shift.

[0460] In the embodiment of this application, as shown in Figure 79, the first groove U11 and the second groove U12 in the first groove U both exhibit a striped shape, the first groove U11 can extend along a third direction Z, and the second groove U12 can extend along a second direction Y.

[0461] In this application, the length of the first groove U11 in the first groove U in the third direction Z is greater than or equal to the width of the first light-emitting part 12a in the third direction Z and greater than or equal to the width of the second light-emitting part 12b in the third direction Z, and / or, the length of the second groove U12 in the first groove U in the second direction Y is greater than or equal to the width of the first light-emitting part 12a in the second direction Y and greater than or equal to the width of the third light-emitting part 12c in the second direction Y.

[0462] Here, if the length of the first groove U11 in the first groove U in the third direction Z is greater than or equal to the width of the first light-emitting part 12a in the third direction Z, and greater than or equal to the width of the second light-emitting part 12b in the third direction Z, then the length of the filling part 50 located within the first groove U11 can be made longer. In this way, it can be ensured that the filling part 50 located within the first groove U11 can shield as much as possible the light that propagates laterally along the second direction Y within the second semiconductor layer 15 from the light emitted from the first light-emitting part 12a and the second light-emitting part 12b, thereby further reducing the risk of color shift.

[0463] If the length of the second groove U12 in the second direction Y in the first groove U is greater than or equal to the width of the first light-emitting part 12a in the second direction Y, and greater than or equal to the width of the third light-emitting part 12c in the second direction Y, then the length of the filling part 50 located within the second groove U12 can be made longer. In this way, the filling part 50 located within the second groove U12 can be made to shield as much as possible the light that propagates laterally along the third direction Z within the second semiconductor layer 15 from the light emitted from the first light-emitting part 12a and the third light-emitting part 12c. As a result, the risk of optical crosstalk between the first light-emitting part 12a and the third light-emitting part 12c can be further reduced, thereby further reducing the risk of color shift.

[0464] In the embodiments of this application, the width of the first groove U11 in the first groove U in the second direction Y and the width of the second groove U12 in the third direction Z can both be within the range of 2 micrometers to 10 micrometers. In this way, a wide width of the filling portion 50 distributed within the first groove U11 can be secured, thereby ensuring a good shielding effect by the filling portion 50 located within the first groove U11 against light that propagates laterally along the second direction Y within the second semiconductor layer 15, among the light emitted from the first light-emitting portion 12a and the second light-emitting portion 12b. Similarly, a wide width of the filling portion 50 distributed within the second groove U12 can be secured, thereby ensuring a good shielding effect against light that propagates laterally along the third direction Z within the second semiconductor layer 15, among the light emitted from the first light-emitting portion 12a and the third light-emitting portion 12c.

[0465] As one option, the minimum distance between the outer edge of the first groove U provided in the second semiconductor layer 15 and the outer edge of the light-emitting layer 14 in the adjacent light-emitting section 11, as projected on the extending surface of the second semiconductor layer 15, is 5 micrometers or more.

[0466] For example, referring to Figure 78, in the second direction Y, the minimum distance d01 between the first groove U11 in the first groove U and the light-emitting layer in the adjacent light-emitting part 11 (i.e., the first light-emitting part 12a or the second light-emitting part 12b) must be 5 micrometers or more. In this way, a large distance can be secured between the first groove U11 and the light-emitting layer in the adjacent first light-emitting part 12a or the second light-emitting part 12b, so that the first groove U11 does not interfere with the light emission of the adjacent first light-emitting part 12a or the second light-emitting part 12b. Similarly, in the third direction Z, the minimum distance d02 between the second groove U12 in the first groove U and the light-emitting layer in the adjacent light-emitting part 11 (i.e., the first light-emitting part 12a or the third light-emitting part 12c) must be 5 micrometers or more. In this way, a large distance can be secured between the second groove U12 and the light-emitting layer in the adjacent first light-emitting section 12a or the light-emitting layer in the third light-emitting section 12c, so that the second groove U12 does not interfere with the light emission of the adjacent first light-emitting section 12a or the third light-emitting section 12c.

[0467] In this application, as shown in Figure 78, the first groove U11 and the second groove U12 in the first groove U can communicate with each other.

[0468] The above embodiment is a schematic explanation using the example that the first groove U11 and the second groove U12 are in communication. In other feasible embodiments, as shown in Figure 86, Figure 86 is a bottom view of another light-emitting chip according to another embodiment of this application. The first groove U11 and the second groove U12 provided in the second semiconductor layer 15 do not have to be in communication. In such cases, the relationship between the length and distribution position of the first groove U11 and the second groove U12 can be discussed by referring to the above-mentioned related information, and will not be explained further here.

[0469] When the first groove U11 and the second groove U12 in the first groove U are in communication with each other, the orthographic projection shape of the first groove U11 and the second groove U12 on the extending surface of the second semiconductor layer 15 may include a T-shape. In this way, the first groove U can prevent optical crosstalk between the first light-emitting portion 12a, the second light-emitting portion 12b, and the third light-emitting portion 12c, and effectively reduce or avoid color shift. In another feasible embodiment, as shown in Figure 87, which is a bottom view of yet another light-emitting chip according to another embodiment of this application, the orthographic projection shape of the first groove U11 and the second groove U12 on the extending surface of the second semiconductor layer 15 may also be cross-shaped. Note that the T-shape in the above embodiment may also be understood as a part of the cross shape.

[0470] For example, after providing a filling portion 50 in the first groove U, the filling portion 50 can not only shield light that causes crosstalk between the first light-emitting portion 12a and the second light-emitting portion 12b distributed in the second direction Y, and light that causes crosstalk between the first light-emitting portion 12a and the third light-emitting portion 12c distributed in the third direction Z, but can also shield light that causes crosstalk between the second light-emitting portion 12b and the third light-emitting portion 12c distributed in the diagonal direction.

[0471] Figure 87 will be schematically explained using the example of the case where the light-emitting areas of the first light-emitting section 12a, the second light-emitting section 12b, and the third light-emitting section 12c are all equal. In this case, the second groove U12 extending along the second direction Y can extend to the opposite side of the second light-emitting section 12b from the first light-emitting section 12a, thereby further reducing the risk of optical crosstalk occurring between each light-emitting section.

[0472] In embodiments of this application, as shown in Figures 78 and 86, the light-emitting unit 10 may further include a second electrode 18, where the second electrode 18 is located on the side of the common electrode layer 16 away from the color conversion unit 20 and can be electrically connected to the common electrode layer 16.

[0473] Here, as shown in Figures 78 and 86, the second electrode 18 and the first electrode 12 in the third light-emitting part 12c can be arranged in a line in the second direction Y, and the second electrode 18 and the first electrode 12 in the second light-emitting part 12b can be arranged in a line in the third direction Z.

[0474] Referring to Figure 88 in the embodiments of this application, Figure 88 is a cross-sectional view of a light-emitting chip according to an embodiment of this application. The light-emitting chip 100 may further include a dam 90, which is located on the side of the color conversion unit 20 facing the light-emitting unit 10, and the dam 90 is distributed so as to surround the outer periphery of the light-emitting unit 10. Specifically, the dam 90 has the function of absorbing and / or reflecting at least blue light. For example, the dam 90 has the function of absorbing and / or reflecting visible light.

[0475] For example, the dam 90 may be an integral structure, and the dam 90 may be distributed around the outer circumference of the light-emitting unit 10 in a continuous manner with its ends connected to one another. In this way, the dam 90 can block light leakage from the sides of the light-emitting chip 100 in any direction.

[0476] For example, the dam 90 in the light-emitting chip 100 is used to absorb the light that illuminates the edges of the light that propagates laterally within the second semiconductor layer 15 from the light-emitting part 11. In other words, after the light emitted from the light-emitting part 11 enters the interior of the second semiconductor layer 15 and an optical waveguide phenomenon occurs inside the second semiconductor layer 15, the light that illuminates the edges of the light that propagates laterally within the second semiconductor layer 15 can be absorbed by the dam 90.

[0477] Here, the dam 90 can be made of an opaque material. Exemplarily, the material of the dam 90 in the light-emitting chip 100 may include at least one of a reflective organic material and a light-absorbing organic material. Here, if the material of the dam 90 includes a light-absorbing organic material, the material of the dam 90 will be a black organic material that can absorb light propagating laterally within the second semiconductor layer 15 in the light-emitting unit 10.

[0478] For example, Dam 90 may be a high-molecular polymer mixed with a light-absorbing material, the high-molecular polymer may be used as a substrate, and the light-absorbing material is mixed inside the high-molecular polymer.

[0479] For example, the dam 90 may be a polymer in which light-absorbing material and scattering particles are mixed.

[0480] For example, the light-absorbing material may be carbon black, and the scattering particles may be at least one of silica particles, titanium dioxide particles, or a polymer with a refractive index different from that of the substrate of Dam 90.

[0481] In the embodiments of this application, as shown in Figure 78 or Figure 86, the light-emitting area of ​​the second light-emitting unit 12b may be larger than the light-emitting area of ​​the first light-emitting unit 12a, and the light-emitting area of ​​the second light-emitting unit 12b may be larger than the light-emitting area of ​​the third light-emitting unit 12c. In other words, the light-emitting area of ​​the second light-emitting unit 12b is large, while the light-emitting areas of the first light-emitting unit 12a and the third light-emitting unit 12c are both small. In this way, it can be guaranteed that the second light-emitting unit 12b emits more light.

[0482] In this application, as shown in Figure 79, the projected area on the extended surface of the second semiconductor layer 15 of the optical functional unit 22 corresponding to the second light-emitting unit 12b (i.e., the second optical functional unit 22b in the above embodiment) is larger than the projected area on the extended surface of the second semiconductor layer 15 of the optical functional unit 22 corresponding to the first light-emitting unit 12a (i.e., the first optical functional unit 22a in the above embodiment), and is larger than the projected area on the extended surface of the second semiconductor layer 15 of the optical functional unit 22 corresponding to the third light-emitting unit 12c (i.e., the third optical functional unit 22c in the above embodiment).

[0483] In this application, the first light is blue light, and the optical function unit 22 corresponding to the second light-emitting unit 12b (i.e., the second optical function unit 22b in the above embodiment) can be used to convert the blue light to green light. The optical function unit corresponding to one of the light-emitting units, the first light-emitting unit 12a and the second light-emitting unit 12b, can be used to convert the blue light to red light, and the optical function unit 22 corresponding to the other of the light-emitting units, the first light-emitting unit 12a and the second light-emitting unit 12b, can be used to transmit the first light. Exemplarily, the optical function unit 22 corresponding to the first light-emitting unit 12a (i.e., the first optical function unit 22a in the above embodiment) can be used to convert the blue light to red light, and the optical function unit 22 corresponding to the third light-emitting unit 12c (i.e., the third optical function unit 22c in the above embodiment) can be used to transmit the first light.

[0484] In such a case, it can be guaranteed that the projected area of ​​the second semiconductor layer 15 of the second optical functional unit 22b on its extended surface is large, while the projected area of ​​the second semiconductor layer 15 of the first optical functional unit 22a and the projected area of ​​the second semiconductor layer 15 of the third optical functional unit 22c on their extended surface are both small. In this way, it can be guaranteed that the second optical functional unit 22b can convert more of the light emitted from the second light-emitting unit 12b into green light.

[0485] Furthermore, through the action of the red subpixel R, blue subpixel B, and green subpixel G, the light-emitting chip 100 can be used to emit white light. Here, since the light emitted from the green subpixel G accounts for the largest proportion of the emitted white light, increasing the area of ​​the green subpixel G can improve the luminous efficiency of the light-emitting chip 100, thereby guaranteeing that the light-emitting chip 100 has high luminous efficiency.

[0486] In the embodiments of this application, as shown in Figure 78 or Figure 86, the length of the light-emitting layer 14 of the second light-emitting unit 12b in the third direction Z may be longer than the length of the light-emitting layer 14 of the first light-emitting unit 12a in the third direction Z. In this way, it is possible to ensure that the light-emitting area of ​​the second light-emitting unit 12b is large.

[0487] The length of the optical functional unit 22 corresponding to the second light-emitting unit 12b (i.e., the second optical functional unit 22b in the above embodiment) in the third direction may be longer than the length of the optical light energy unit 22 corresponding to the third light-emitting unit (i.e., the third optical functional unit 22c in the above embodiment) in the third direction Z. In this way, it can be guaranteed that all light emitted from the second light-emitting unit 12b, which has a large light-emitting area, can be converted by the second optical functional unit 22b.

[0488] In embodiments of this application, referring to Figure 89, which is a cross-sectional view of another light-emitting chip according to embodiments of this application, the color conversion unit 20 may further include a first light-selective transmission layer 60. Herein, the first light-selective transmission layer 60 may be distributed on the side of the color conversion unit 20 away from the light-emitting unit 10, and the first light-selective transmission layer 60 may be used to reflect first light and transmit light of a different color from the first light. Exemplarily, the first light-selective transmission layer 60 may be used to reflect blue light and transmit red and green light.

[0489] The first light emitted from the light-emitting section 11 in the light-emitting unit 10 passes through the optical function section 22 and can be converted by the optical function section 22 into light of a different color from the first light. In this way, the light of a different color from the first light can be transmitted through the first light-selective transmission layer 60 and subsequently emitted through the first substrate 30. On the other hand, the first light emitted from the light-emitting section 11 is reflected into the optical function section 22 by the first light-selective transmission layer 60, allowing the optical function section 22 to continue converting the unconverted first light. In this way, the conversion efficiency of the first light by the optical function section 22 is effectively improved, and consequently, the light emission efficiency of the light-emitting chip 100 can be effectively improved.

[0490] Here, the multiple optical function units 22 may include at least one first target optical function unit for converting the color of the first light to another color. In one feasible embodiment, the first light is blue light, and the first target optical function unit may include at least one of the first optical function unit 22a and the second optical function unit 22b in the above embodiment. In another feasible embodiment, if the first light is ultraviolet light, the first target optical function unit may include at least one of the first optical function unit 22a, the second optical function unit 22b and the third optical function unit 22c in the above embodiment.

[0491] For example, if the first light is blue light and the first target optical function unit includes the first optical function unit 22a and the second optical function unit 22b in the above embodiment, providing the first light selective transmission layer 60 ensures that the blue light not converted by the first optical function unit 22a and the second optical unit 22b is reflected to the first optical unit 22a or the second optical unit 22b, allowing the first optical unit 22a and the second optical unit 22b to continue converting the unconverted first light. This effectively improves the conversion efficiency of the first light by the first optical unit 22a and the second optical unit 22b, and consequently, effectively improves the light emission efficiency of the light-emitting chip 100.

[0492] In this application, the orthographic projection of the first light-selective transmission layer 60 on the extending surface of the second semiconductor layer 15 can overlap with the orthographic projection of the first target optical function on the extending surface of the second semiconductor layer 15. Exemplarily, the orthographic projection of the first light-selective transmission layer 60 on the extending surface of the second semiconductor layer 15 can cover the orthographic projection of the first target optical function on the extending surface of the second semiconductor layer 15. In this way, it is possible to ensure that as much of the first light that has not been converted by the first target optical function as possible is reflected back to the first target optical function, thereby ensuring that the efficiency of the first target optical function in converting the first light to light of other colors is high, and that the light of other colors obtained by the conversion by the first target optical function is properly transmitted and emitted through the first light-selective transmission layer 60 and the first substrate 30.

[0493] Referring to Figure 90, which is a cross-sectional view of yet another light-emitting chip according to an embodiment of the present application, the first light-selective transmission layer 60 may be a continuously distributed film layer. Here, the plurality of optical functional units 22 may include at least one second target optical functional unit for transmitting the first light. Exemplarily, if the first light is blue light, at least one second target optical unit may include a third optical functional unit 22c for transmitting the first light.

[0494] Here, the first light-selective transmission layer 60 may include a hollow region 60U, and the orthographic projection of the hollow region 60U on the extending surface of the second semiconductor layer 15 may overlap with the orthographic projection of the second semiconductor layer 15 on the extending surface of the second target optical functional part.

[0495] For example, the orthographic projection of the second semiconductor layer 15 on the extended surface of the hollow region 60U of the first light-selective transmission layer 60 can cover the orthographic projection of the second semiconductor layer 15 on the extended surface of the second target optical functional part. In other words, the orthographic projection of the second semiconductor layer 15 on the extended surface of the first light-selective transmission layer 60 can not overlap with the orthographic projection of the second semiconductor layer 15 on the extended surface of the second target optical functional part.

[0496] In such a case, the hollow region 60U provided within the first light-selective transmission layer 60 ensures that the blue light emitted from the second target optical function unit can pass through the hollow region 60U and be emitted, thereby ensuring that the first light-selective transmission layer 60 does not block the blue light emitted from the second target optical function unit.

[0497] Referring to Figure 91 in the embodiments of this application, Figure 91 is a schematic diagram of the structure of the first optically selective transmission layer according to the embodiments of this application. The first optically selective transmission layer 60 may include a plurality of first dielectric layers 60a and a plurality of second dielectric layers 60b sequentially stacked along a first direction X, and the refractive index of the first dielectric layer 60a and the refractive index of the second dielectric layer 60b may be different. In other words, within each film layer of the first optically selective transmission layer 60, the refractive index of different regions is different. For this reason, the thickness and refractive index of the plurality of first dielectric layers 60a and the plurality of second dielectric layers 60b may all be different.

[0498] For example, the material of the first dielectric layer 60a may include silicon oxide, and the material of the second dielectric layer 60b may include niobium oxide. Both the first dielectric layer 60a and the second dielectric layer 60b are composed of inorganic materials. In other words, the first light-selective transmission layer 60 is a film layer structure formed of inorganic materials. In such a case, the first light-selective transmission layer 60 corresponds to a distributed Bragg reflection (DBR) reflective layer.

[0499] In another feasible embodiment, as shown in Figure 92, Figure 92 is a cross-sectional view of yet another light-emitting chip according to an embodiment of the present application. The material of the first light-selective transmission layer 60 may be a cholesteric liquid crystal. In this case, since both the cholesteric liquid crystal and the optical functional part 22 can be formed by an inkjet printing process, the first light-selective transmission layer 60 can be located within the aperture region K that defines the first target optical functional part. The cholesteric liquid crystal can be configured such that the first light-selective transmission layer 60 reflects first light and transmits light of a different color from the first light. In one specific embodiment, the cholesteric liquid crystal may contain left-handed and right-handed liquid crystal molecules, and by controlling the refractive indices of the left-handed and right-handed liquid crystal molecules in the cholesteric liquid crystal, and the pitch between adjacent left-handed and right-handed liquid crystal molecules in the cholesteric liquid crystal, the first light-selective transmission layer 60 can be made to reflect first light and transmit light of a different color from the first light.

[0500] Referring to Figure 93 in an embodiment of this application, Figure 93 is a cross-sectional view of a light-emitting chip according to another embodiment of this application. The light-emitting chip 100 may further include a second light-selective transmission layer 80 distributed within the color conversion unit 20 or within the light-emitting unit 10. Here, the second light-selective transmission layer 80 can be used to transmit a first light and reflect light of a different color from the first light. Exemplarily, the second light-selective transmission layer 80 can be used to reflect red and green light and transmit blue light.

[0501] Here, the first light emitted from the light-emitting section 11 of the light-emitting unit 10 can be transmitted through the second light-selective transmission layer 80. After the first light is converted into light of a different color by the optical function section 22, the light of a different color can be emitted from the optical function section 22. On the other hand, the light of a different color that was not emitted from the optical function section 22 is reflected into the optical function section 22 by the second light-selective transmission layer 80, and then emitted through the first substrate 30. In this way, the light emission efficiency of the light-emitting chip 100 can be effectively improved.

[0502] For example, the first light is blue light, and the blue light emitted from the first light-emitting section 12a and the second light-emitting section 12b can be transmitted through the second light-selective transmission layer 80. After the blue light is converted to red light by the first optical function section 22a, the red light can be emitted from the first optical function section 22a. On the other hand, the red light that is not emitted from the first optical function section 22a is reflected into the optical function section 22 by the second light-selective transmission layer 80 and subsequently emitted through the first substrate 30. In this way, the light emission efficiency of the light-emitting chip 100 can be effectively improved.

[0503] In the embodiment of this application, the light-emitting chip 100 may include at least one of the first light-selective transmission layer 60 and the second light-selective transmission layer 80. When the light-emitting chip 100 includes both the first light-selective transmission layer 60 and the second light-selective transmission layer 80, the second light-selective transmission layer 80 can cause the unconverted first light to enter the optical function unit 22 and reflect the light converted by the optical function unit 22, while simultaneously allowing the light converted by the optical function unit 22 to pass through and be emitted, and reflecting the unconverted first light. In this way, the light-emitting efficiency of the light-emitting chip 100 can be further improved.

[0504] The second optically selective transmission layer 80 may also be a DBR reflective layer. When both the first optically selective transmission layer 60 and the second optically selective transmission layer 80 are DBR reflective layers, the distribution of the plurality of first dielectric layers 60a and plurality of second dielectric layers 60b in the first optically selective transmission layer 60 may be different, and their refractive indices may be different from each other. The distribution and refractive index of the plurality of first dielectric layers 60a and plurality of second dielectric layers 60b in the first optically selective transmission layer 60 may be different from the distribution and refractive index of the plurality of first dielectric layers 60a and plurality of second dielectric layers 60b in the second optically selective transmission layer 80. Therefore, it can be guaranteed that the wavelength of light reflected by the first optically selective transmission layer 60 is different from the wavelength of light reflected by the second optically selective transmission layer 80, and it can be guaranteed that the wavelength of light transmitted by the first optically selective transmission layer 60 is different from the wavelength of light transmitted by the second optically selective transmission layer 80.

[0505] In this application, the second light-selective transmission layer 80 can be distributed within the color conversion unit 20, or the second light-selective transmission layer 80 can be distributed within the light-emitting unit 10. For this reason, the embodiments of this application will be schematically explained using the following two embodiments as examples.

[0506] As a first embodiment, as shown in Figure 93, when the second optically selective transparent layer 80 is distributed within the light-emitting unit 10, the second optically selective transparent layer 80 can be located on the side of the second semiconductor layer 15 facing the color conversion unit 20. In such a case, the second optically selective transparent layer 80 can be formed in the process of manufacturing the light-emitting unit 10. For example, the second optically selective transparent layer 80 can be arranged so as to be bonded to the second semiconductor layer 15. For example, in the process of manufacturing the light-emitting unit 10, the second optically selective transparent layer 80 can be manufactured in advance, and then each film layer of the light-emitting unit 10 can be manufactured on the second optically selective transparent layer 80.

[0507] Referring to Figure 94 as a second embodiment, Figure 94 is a cross-sectional view of a light-emitting chip according to another embodiment of the present application. When the second light-selective transmission layer 80 is distributed within the color conversion unit 20, the second light-selective transmission layer 80 can be located on the side of the defining dam 21 and the plurality of optical functional parts 22 facing the light-emitting unit 10. In such a case, the second light-selective transmission layer 80 is formed in the process of manufacturing the color conversion unit 20. For example, in the process of manufacturing the color conversion unit 10, each film layer of the color conversion unit 20 can be manufactured in advance, and then the second light-selective transmission layer 80 can be formed on the outermost film layer. For example, the second light-selective transmission layer 80 is located between the color conversion unit 20 and the sealing layer 80, and in the process of manufacturing the color conversion unit 10, the second light-selective transmission layer 80 can be manufactured first, and then the sealing layer 26 can be manufactured.

[0508] Furthermore, if the second light-selective transmission layer 80 is a DBR reflective layer, the interior of the second light-selective transmission layer 80 is composed of a plurality of stacked first dielectric layers and second dielectric layers, and both the first and second dielectric layers are inorganic layers and have good water- and oxygen barrier properties. Therefore, if the second light-selective transmission layer 80 can be located on the side of the defining dam 21 and the plurality of optical functional parts 22 that face the light-emitting unit 10, the second light-selective transmission layer 80 can seal the defining dam 21 and the plurality of optical functional parts 22, that is, the second light-selective transmission layer 80 can also function as a sealing layer 26. In this case, the second light-selective transmission layer 80 and the sealing layer 26 can be integrated into a single film layer.

[0509] In another feasible embodiment, referring to Figure 95, which is a cross-sectional view of another light-emitting chip according to another embodiment of the present application. When the second light-selective transmission layer 80 is distributed within the light-emitting unit 10, the second light-selective transmission layer 80 may be located on the side of the plurality of light-emitting parts 11 away from the second semiconductor layer 15. For example, the second light-selective transmission layer 80 can be used to cover the plurality of light-emitting parts 11 in the light-emitting unit 10.

[0510] In the embodiments of this application, each cross-sectional view is obtained by cutting along a certain cross-sectional line in the plan view. For example, at least one of Figures 47 and 48 in the above embodiments is a cross-sectional view along the cross-sectional line HH of Figure 45, at least one of Figures 50, 51, 52, 53, 59, 61, 62, 63, 64, 65, 66, 67, 69, 70, 72, 73, 75, 76 and 77 in the above embodiments is a cross-sectional view along the cross-sectional line VV of Figure 49, Figure 88 is a cross-sectional view along the cross-sectional line LL or cross-sectional line QQ of Figure 78, and at least one of Figures 89, 90, 92, 93, 94 and 95 is a cross-sectional view along the cross-sectional line QQ of Figure 78.

[0511] In the above embodiments, the light-emitting chip 100 is a 3-in-1 type chip, meaning that three light-emitting units 11 are simultaneously included within the light-emitting chip 100, and these three light-emitting units 11 share the same second semiconductor layer 15. In other feasible embodiments, only one light-emitting unit 11 may be included within the light-emitting chip 100.

[0512] Exemplary, as shown in Figure 96, Figure 96 is a cross-sectional view of yet another light-emitting chip according to another embodiment of the present application. When the light-emitting chip 100 contains only one light-emitting section 11, the second semiconductor layer 15 in each light-emitting chip 100 is provided separately, and each second semiconductor layer 15 in each light-emitting chip 15 can have one second electrode 18 separately connected. When the light-emitting chip 100 contains a second optically selective transmission layer 80, and the second optically selective transmission layer 80 is located on the side of the second semiconductor layer 15 facing the color conversion unit 20, the second optically selective transmission layer 80 in each light-emitting chip 100 may be provided separately. Of course, in other feasible embodiments, as shown in Figure 97, Figure 97 is a cross-sectional view of yet another light-emitting chip according to another embodiment of the present application, and the second optically selective transmission layer 80 in each light-emitting chip 100 can be connected integrally.

[0513] After connecting multiple light-emitting chips 100 and a color conversion unit 20, each optical function unit 22 in the color conversion unit 20 can individually correspond to one light-emitting unit 11 of one light-emitting chip 100. For example, in Figures 96 and 97, the first optical function unit 22a can correspond to one light-emitting unit 11 of one light-emitting chip 100, and the second optical function unit 22b can correspond to one light-emitting unit 11 of the other light-emitting chip 100.

[0514] Furthermore, if the light-emitting chip 100 contains only one light-emitting section 11, the internal structure and principle of the light-emitting chip 100 are the same as those of the 3-in-1 type light-emitting chip 100 in the above-described embodiment. For this reason, other structures within the light-emitting chip 100 will not be described here.

[0515] In addition, the above embodiments are schematic explanations that illustrate the process of forming the color conversion unit 20 and the light-emitting unit 10 separately, then aligning and bonding them together. In other feasible embodiments, the color conversion unit 20 may be formed directly after the light-emitting unit 10 has been formed.

[0516] Specifically, as shown in Figure 98, Figure 98 is a schematic diagram of the structure of a light-emitting chip according to yet another embodiment of this application. Although Figure 98 schematically shows only the case where there is only one light-emitting part, in reality, the number of light-emitting parts in the light-emitting chip 100 can be multiple, for example, each corresponding to a light-emitting part that emits each of the RGB colors of light after passing through an optical function part. The light-emitting chip 100 includes a first semiconductor layer 13, a light-emitting layer 14, a second semiconductor layer 15, and a defining dam 21 located on the side of the second semiconductor layer away from the light-emitting layer 14, the defining dam layer includes an aperture region K, and an optical function part 22 is formed in the aperture region K. For example, the light-emitting chip 100 further includes a first light-selective transmission layer 60, for example, the material of the first light-selective transmission layer 60 may be a cholesteric liquid crystal or one of those described in other embodiments of this application, for example, the cholesteric liquid crystal may be located inside the aperture region K. For example, the second light-selective transmission layer 80 is located between the optical functional section 22 and the second semiconductor layer 15.

[0517] The first light-selective transmission layer 60 and / or the second light-selective transmission layer 80 can modulate the light emitted from the light-emitting layer to increase the luminous efficiency of the light-emitting chip 100, where the principle of light modulation by the first light-selective transmission layer 60 and the second light-selective transmission layer 80 is the same as the principle of light modulation by the first light-selective transmission layer 60 and the second light-selective transmission layer 80 in the 3-in-1 type light-emitting chip 100 in the above-described embodiment. The arrangement of the first light-selective transmission layer 60 and the second light-selective transmission layer 80 in any of the light-emitting sections for realizing RGB light emission is the same as the arrangement of the first light-selective transmission layer 60 and the second light-selective transmission layer 80 in the 3-in-1 type light-emitting chip 100 in the above-described embodiment, and therefore other structures within the light-emitting chip 100 will not be described here.

[0518] For illustrative purposes, Figure 99 is a schematic diagram of the manufacturing process of a light-emitting chip according to the embodiment of Figure 98. First, a second semiconductor layer 15, a light-emitting layer 14, and a first semiconductor layer 13 can be sequentially formed on one side of the substrate 001 (e.g., a sapphire substrate).

[0519] Next, a temporary substrate 002 can be formed on the side of the first semiconductor layer 13 away from the light-emitting layer 14, and the temporary substrate 002 can be peeled off.

[0520] Next, a second light-selective transmission layer 80 can be formed on the side of the second semiconductor layer 15 that is away from the temporary substrate 002.

[0521] Subsequently, a regulating dam layer 21 can be formed on the side of the second light-selective transmission layer 80 that is away from the temporary substrate 002.

[0522] Furthermore, the optical functional section 22 can be formed within the opening region K of the standard dam layer 21 by inkjet printing.

[0523] Next, a first light-selective transmission layer 60 manufactured from cholesteric liquid crystal can be formed within the aperture region K of the standard dam layer 21 by inkjet printing.

[0524] Finally, as one option, a sealing layer 26 can be formed to seal the regulating dam layer 21, the first light-selective transmission layer 60, and the optical functional section 22.

[0525] The manufacturing process shown in Figure 99 may be used to manufacture a light-emitting chip 100 containing only one light-emitting unit 11, or it may be used to manufacture a 3-in-1 type light-emitting chip 100. The embodiments of this application are not limited thereto.

[0526] As described above, the light-emitting chip according to the embodiment of this application includes a light-emitting unit and a color conversion unit disposed on the light-emitting side of the light-emitting unit. A first groove opening on a second surface can be provided in the second semiconductor layer of the light-emitting unit, and a filler portion can be located within the first groove. In this way, after a portion of the light emitted from the light-emitting unit propagates laterally through the second semiconductor layer, the filler portion located in the first groove can shield the light that has propagated to the region where an adjacent light-emitting unit is located. As a result, the probability that a portion of the light emitted from the light-emitting unit propagates laterally through the second semiconductor layer and reaches the region where an adjacent light-emitting unit is located can be effectively reduced, thereby ensuring that optical crosstalk is less likely to occur within the light-emitting chip, and consequently, the display effect of a display substrate on which such a light-emitting chip is integrated can be improved.

[0527] The foregoing describes only specific embodiments of the present disclosure, and the scope of protection of the present disclosure is not limited thereto. All modifications and equivalent substitutions conceivable by a person skilled in the art within the scope of the art disclosed herein are included within the scope of protection of the present disclosure. Accordingly, the scope of protection of the present disclosure shall be equivalent to the scope of protection described in the claims. [Explanation of symbols]

[0528] 001 Substrate 002 Temporary circuit board 10-color conversion unit, light-emitting unit 11 Light-emitting part 12 First electrode 12a First light-emitting part 12b Second light-emitting part 12c Third light-emitting part 13. First semiconductor layer 14. Emitting layer 15. Second semiconductor layer 15a First sublayer 15A Semiconductor Section 15b Second sublayer 16 Common electrode layer 17 Light Disturbance Section 18. Second electrode 19. Fifth insulating layer 20-color conversion unit 21. Standard Dam 21B End 22 Optical function section 22a First optical function unit 22b Second optical function section 22c Third optical function section 23 Light blocking layer 24 filter layers 26 Sealing layer 28 Filter section 30 First substrate 31 First insulating layer 32 nanolayer 33 The second trench 34 Metal layer 35 Protrusion 36 Protruding Rings 37 Grating Stripe 38 Light guide film 40. First reflection pattern 41 Adhesive layer 45. Second reflection pattern 46. ​​Third insulating layer 47. Second insulating layer 48 Temporary bonding layer 49 Debonding layer 50 Filling section 60 First light-selective transmission layer 60a First dielectric layer 60b Second dielectric layer 60U hollow area 70 Temporary circuit board 72 Current Diffusion Layer 80 Second light-selective transmission layer 90 Light-shielding part 91 Second circuit board 92 electrodes 100 light-emitting chips 120 Initial Light-Emitting Unit 121a First quantum well layer 122a First p-type gallium nitride layer 123 Reflective metal layer 124a First sub-electrode 125a First current diffusion layer 131 Indium zinc oxide bonding layer 131a First indium zinc oxide layer 131b Second indium zinc oxide layer 132 Metal bonding layer 132a First submetal layer 132b Second submetal layer 132c Third submetal layer 132t Class 1 Metal Bump 133 Adhesive layer 151 Connection part 152 Auxiliary part 155 Gallium nitride buffer layer 156 n-type gallium nitride layer 192 Second sub-electrode 193 Third sub-electrode 200 Display board 241 First filter section 242 Second filter section 243 Third filter section 300 wafers 310 Initial first circuit board 1000 mobile phones 1210 Initial quantum well layer 1220 Early P-type gallium nitride layer 1310 First Initial Submetallic Layer 1320 Second Early Submetallic Layer 1330 Third Early Submetallic Layer 1550 Initial gallium nitride buffer layer 1560 Early n-type gallium nitride layer A. First initial wafer A1 First side A2 Second side A3 reference plane B. Second master wafer B1 side B2 side C Third initial wafer D. Fourth Master Wafer E1 Part 1 E2 Second part H Beer H1 First Beer H2 Second Beer H3 The third beer H4 The 4th Beer K aperture area K1 First opening region K2 Second opening region K3 Third opening region K4 Fourth opening region K11 First sub-opening region K21 Second sub-aperture region K31 Third sub-opening region K41 Fourth sub-aperture region K51 Fifth sub-aperture region K61 Sixth sub-opening region M First large board N Second large board P pixel region S1 Subpixel Region S11 First subpixel region S12 Second sub-pixel region S13 Third sub-pixel region S17 Negative electrode area S17a Third part S17b Second part S17c Part 1 U First groove U0 groove U1 First blind spot U2 First through groove U3 Second Blind Spot U4 Second through groove U11 First groove U12 Second Groove

Claims

1. A light-emitting chip comprising a light-emitting unit and a color conversion unit disposed on the light-emitting side of the light-emitting unit, The light-emitting unit includes a plurality of light-emitting sections, each of which includes a first electrode, a first semiconductor layer, and a light-emitting layer arranged in a stack along a first direction. The light-emitting unit further includes a second semiconductor layer and a common electrode layer, the second semiconductor layer being arranged on the light-emitting side of the plurality of light-emitting units, the second semiconductor layer including a connecting portion and an auxiliary portion, the connecting portion being connected to the light-emitting unit, at least a part of the auxiliary portion being located between adjacent connecting portions, the connecting portion and the auxiliary portion being an integral structure, and the common electrode layer being connected to the auxiliary portion. Here, the surface of the second semiconductor layer facing the color conversion unit is the first surface, the surface of the second semiconductor layer away from the color conversion unit is the second surface, the second semiconductor layer includes a first groove opening on the second surface, and the first groove is located at least between the orthographic projections of two adjacent light-emitting layers among the plurality of light-emitting units on the extending surface of the second semiconductor layer. The light-emitting chip further includes a filling portion located within the first groove, the filling portion being made of an opaque material. A light-emitting chip characterized by the following features.

2. The light-emitting chip according to claim 1, characterized in that the filling portion is part of the common electrode layer.

3. The light-emitting chip according to claim 2, characterized in that the first groove is located within the orthographic projection of the extending surface of the second semiconductor layer on the common electrode layer.

4. The light-emitting chip according to claim 3, characterized in that the common electrode layer has a groove on the side away from the color conversion unit, and the orthographic projection of the groove on the extending surface of the second semiconductor layer overlaps with the first groove.

5. The light-emitting chip according to claim 2, characterized in that the portion of the common electrode layer located within the first groove and the portion located outside the first groove are a continuous, integrated structure.

6. The light-emitting chip according to claim 1, characterized in that the ratio of the depth of the first groove to the thickness of the second semiconductor layer is in the range of 10% to 65%.

7. The light-emitting chip according to claim 1, characterized in that the ratio of the distance between the bottom of the first groove and the first surface in the first direction to the thickness of the second semiconductor layer is in the range of 35% to 90%.

8. The second semiconductor layer includes a stacked arrangement of a first sublayer and a second sublayer, the first sublayer being adjacent to the light-emitting portion by the second sublayer, the first sublayer being a first carrier transport layer, and the second sublayer being a buffer layer. Here, the first groove includes a first blind groove provided on the side of the first sublayer away from the second sublayer, Alternatively, the first groove includes a first through groove that penetrates the first sublayer, Alternatively, the first groove includes a first through groove penetrating the first sublayer and a second blind groove provided on the side of the second sublayer facing the first sublayer, wherein the first through groove communicates with the second blind groove. Alternatively, the first groove includes a first through groove penetrating the first sublayer and a second through groove penetrating the second sublayer, wherein the first through groove communicates with the second through groove. The light-emitting chip according to feature 1.

9. The light-emitting chip according to claim 8, characterized in that the minimum distance between the outer edge of the first groove and the outer edge of the light-emitting layer in the adjacent light-emitting portion, on the extended surface of the second semiconductor layer, is 5 micrometers or more.

10. The plurality of light-emitting units include a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit, wherein the first light-emitting unit and the second light-emitting unit are arranged in a line in a second direction, and the first light-emitting unit and the third light-emitting unit are arranged in a line in a third direction, and the second direction and the third direction intersect, and both intersect with the first direction. The first groove includes a first groove portion and a second groove portion, the first groove portion is located between the orthographic projection of the first light-emitting portion on the extending surface of the second semiconductor layer and the orthographic projection of the second light-emitting portion on the extending surface of the second semiconductor layer and the second groove portion is located between the orthographic projection of the first light-emitting portion on the extending surface of the second semiconductor layer and the orthographic projection of the third light-emitting portion on the extending surface of the second semiconductor layer. A light-emitting chip according to any one of claims 1 to 9.

11. The light-emitting chip according to claim 10, characterized in that both the first groove and the second groove are strip-shaped, the first groove extends along the third direction, and the second groove extends along the second direction.

12. The length of the first groove in the third direction is greater than or equal to the width of the first light-emitting portion in the third direction, and greater than or equal to the width of the second light-emitting portion in the third direction. and / or, the length of the second groove in the second direction is greater than or equal to the width of the first light-emitting portion in the second direction, and greater than or equal to the width of the third light-emitting portion in the second direction. The light-emitting chip according to feature 10.

13. The light-emitting chip according to claim 10, characterized in that the width of the first groove in the second direction and the width of the second groove in the third direction are both within the range of 2 micrometers to 10 micrometers.

14. The light-emitting chip according to claim 10, characterized in that the first groove and the second groove are in communication with each other.

15. The light-emitting chip according to claim 14, characterized in that the orthographic projection shape of the first groove and the second groove, which are in communication with each other, on the extending surface of the second semiconductor layer includes a T-shape.

16. The light-emitting unit further includes a second electrode, the second electrode being located on the side of the common electrode layer away from the color conversion unit and electrically connected to the common electrode layer. Here, the second electrode and the first electrode in the third light-emitting part are arranged in a line in the second direction, and the second electrode and the first electrode in the second light-emitting part are arranged in a line in the third direction. A light-emitting chip according to any one of claims 11 to 15, characterized by the above.

17. The light-emitting chip further includes a dam, the dam is located on the side of the color conversion unit facing the light-emitting unit, and the dam is distributed so as to surround the outer circumference of the light-emitting unit. Here, the dam is made of an opaque material. A light-emitting chip according to any one of claims 1 to 9 or 11 to 15, characterized by the above.

18. The color conversion unit includes a defining dam layer, the defining dam layer has a plurality of aperture regions defined therein, and in the first direction, one of the light-emitting units corresponds to one of the aperture regions. The color conversion unit further includes an optical function section provided within the opening region of the defining dam layer, and a sealing layer for sealing the optical function section and the defining dam layer. Here, each of the light-emitting units is used to emit a first light, and at least some of the optical functional units are used to convert the color of the incident first light. A light-emitting chip according to any one of claims 1 to 9 or 11 to 15, characterized by the above.

19. The plurality of light-emitting units include a first light-emitting unit, a second light-emitting unit, and a third light-emitting unit, wherein the first light-emitting unit and the second light-emitting unit are arranged in a line in a second direction, and the first light-emitting unit and the third light-emitting unit are arranged in a line in a third direction, and the second direction and the third direction intersect, and both intersect with the first direction. The light-emitting area of ​​the second light-emitting part is larger than the light-emitting area of ​​the first light-emitting part, and the light-emitting area of ​​the second light-emitting part is larger than the light-emitting area of ​​the third light-emitting part. The projected area of ​​the second semiconductor layer on the extending surface of the optical functional part corresponding to the second light-emitting part is greater than the projected area of ​​the second semiconductor layer on the extending surface of the optical functional part corresponding to the first light-emitting part, and greater than the projected area of ​​the second semiconductor layer on the extending surface of the optical functional part corresponding to the third light-emitting part. The light-emitting chip according to feature 18.

20. The length of the light-emitting layer of the second light-emitting unit in the third direction is greater than the length of the light-emitting layer of the first light-emitting unit in the third direction. The length of the optical functional portion corresponding to the second light-emitting portion in the third direction is greater than the length of the optical light energy portion corresponding to the third light-emitting portion in the third direction. The light-emitting chip according to feature 19.

21. The first light is blue light, and the optical function unit corresponding to the second light-emitting unit is used to convert the blue light into green light. The optical function unit corresponding to one of the first and second light-emitting units is used to convert blue light to red light, and the optical function unit corresponding to the other of the first and second light-emitting units is used to transmit the first light. The light-emitting chip according to feature 19.

22. The color conversion unit further includes a first light-selective transmission layer, the first light-selective transmission layer is distributed on the side of the color conversion unit away from the light-emitting unit, and the first light-selective transmission layer is used to reflect the first light and transmit light of a different color from the first light. Here, the plurality of optical functional units include at least one first target optical functional unit for converting the first light color to another color, and the orthographic projection of the first light selective transmission layer on the extending surface of the second semiconductor layer overlaps with the orthographic projection of the first target optical functional unit on the extending surface of the second semiconductor layer. The light-emitting chip according to feature 18.

23. The first light-selective transmission layer is a continuously distributed film layer, Here, the plurality of optical functional units include at least one second target optical functional unit for transmitting the first light, the first light selective transmission layer includes a hollow region, and the orthographic projection of the hollow region on the extending surface of the second semiconductor layer overlaps with the orthographic projection of the second target optical functional unit on the extending surface of the second semiconductor layer. The light-emitting chip according to feature 22.

24. The light-emitting chip according to claim 22, wherein the first light-selective transmission layer comprises a plurality of first dielectric layers and a plurality of second dielectric layers sequentially stacked along the first direction, and the refractive index of the first dielectric layer and the refractive index of the second dielectric layer are different.

25. The light-emitting chip according to claim 22, characterized in that the first light-selective transmission layer is located within the aperture region defining the first target optical function.

26. The light-emitting chip according to claim 25, characterized in that the material of the first light-selective transmission layer includes a cholesteric liquid crystal.

27. The light-emitting chip further comprises the color conversion unit or a second light-selective transmission layer distributed within the light-emitting unit, wherein the second light-selective transmission layer is used to transmit the first light and reflect light of a different color from the first light, as described in any one of claims 22 to 26.

28. When the second light-selective transmission layer is distributed within the color conversion unit, the second light-selective transmission layer is located on the side facing the light-emitting unit of the defining dam and the plurality of optical functional units, When the second light-selective transmission layer is distributed within the light-emitting unit, the second light-selective transmission layer is located on the side of the second semiconductor layer facing the color conversion unit. The light-emitting chip according to feature 27.

29. The light-emitting chip according to claim 23, wherein, when the first light is blue light, at least one of the first target optical units includes a first optical function unit for converting blue light to red light and a second optical function unit for converting blue light to green light, and at least one of the second target optical units includes a third optical function unit for transmitting the first light.

30. The color conversion unit further includes a filter layer, the filter layer includes a plurality of filter sections, and the plurality of filter sections are arranged in a one-to-one correspondence with a plurality of optical function sections. Here, the filter unit is used to filter out light of other colors that are different from the corresponding color light from the light emitted from the optical function unit. The light-emitting chip according to any one of claims 19 to 26 or 28 to 29, characterized by the above.

31. A light-emitting chip according to any one of claims 1 to 30, A drive circuit layer for driving the light-emitting chip to emit light, including, A display board characterized by the following features.

32. The display board according to claim 31, A control circuit for supplying electrical signals to the display board, including, A display device characterized by the following features.

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