Ignition chamber for semiconductor process apparatus, semiconductor process apparatus, and control method

Abstract

This application discloses an ignition chamber for a semiconductor process apparatus, a semiconductor process apparatus, and a control method. In the ignition chamber of the semiconductor process apparatus, one end of each of the communication pipe and the purge pipe is in communication with the first end of the combustion chamber, and the other end of the purge pipe is in communication with a combustion-supporting gas source. One end of each of the exhaust pipe, the first intake pipe, and the second intake pipe is in communication with the second end of the combustion chamber opposite to the first end. The other end of one of the first and second intake pipes is in communication with a combustible gas source, and the other end is in communication with a combustion-supporting gas source. The above-described ignition chamber solves the problem that when the ignition chamber is purged before performing a wet oxidation process using a conventional ignition chamber, some oxygen gas flows into the process chamber body and performs a dry oxidation process with the workpiece, hindering the subsequent wet oxidation process.

Description

TECHNICAL FIELD

[0001] The present application pertains to the technical field of semiconductor processing, and specifically relates to an ignition chamber for semiconductor process equipment, a semiconductor process equipment, and a control method thereof. BACKGROUND ART

[0002] In the semiconductor processing process, forming a silicon dioxide thin film on a silicon wafer is a relatively basic process. Currently, processes for forming a silicon dioxide thin film generally include a dry oxidation process, a steam oxidation process and a wet oxidation process. When factors such as deposition rate and film quality are comprehensively considered, the wet oxidation process is a more widely used film forming process.

[0003] In the wet oxidation process, to avoid contamination by impurities, high-purity hydrogen gas and oxygen gas are usually directly used for combustion in the ignition chamber to generate steam, and a mixture of steam and oxygen gas is introduced into the process chamber by introducing excess oxygen gas into the ignition chamber, and then the wet oxidation process is performed using the steam and oxygen gas. SUMMARY OF THE INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION

[0004] However, when a wet oxidation process is performed using a conventional ignition chamber, it is necessary to deliver excess oxygen gas to the ignition chamber through an oxygen gas delivery pipe before ignition, so part of the oxygen gas flows into the process chamber and undergoes a dry oxidation process with the workpiece to form a film layer with high compactness. Such a highly compact film layer will hinder the subsequent wet oxidation process.

[0005] The present invention aims to provide an ignition chamber for a semiconductor processing apparatus, a semiconductor processing apparatus, and a control method to solve the problem that when a conventional ignition chamber is purged before performing a wet oxidation process, some oxygen gas flows into the process chamber body and performs a dry oxidation process with the workpiece, hindering the subsequent wet oxidation process. [Means for solving the problem]

[0006] In a first aspect, an embodiment of the present application provides an ignition chamber for a semiconductor process apparatus, the ignition chamber comprising a combustion chamber, a communication pipe, a purge pipe, an exhaust pipe, a first intake pipe, and a second intake pipe. One end of the aforementioned connecting pipe and the aforementioned purge pipe is connected to the first end of the combustion chamber, and the other end of the aforementioned purge pipe is connected to a combustion-supporting gas source. One end of each of the exhaust pipe, the first intake pipe, and the second intake pipe is connected to the second end of the combustion chamber opposite to the first end, and the other end of one of the first intake pipe and the second intake pipe is connected to a combustible gas source, and the other end of the other is connected to a combustion-supporting gas source.

[0007] In a second embodiment, an embodiment of the present application discloses a semiconductor process apparatus comprising a process chamber body and an ignition chamber of the semiconductor process apparatus, wherein one end of the communication pipe, away from the combustion chamber, communicates with the process chamber body.

[0008] In a third aspect, embodiments of the present application disclose a control method applied to the above-mentioned semiconductor process apparatus, the control method being: The steps include controlling the system to close both the first intake pipe and the second intake pipe, and to open both the purge pipe and the exhaust pipe, A step of controlling the system to close the purge pipe and the exhaust pipe after a predetermined time has elapsed, The procedure includes the step of controlling both the first intake pipe and the second intake pipe to be opened.

[0009] The embodiment of the present invention discloses an ignition chamber for a semiconductor process apparatus, wherein a connecting pipe and a purge pipe are provided at the first end of the combustion chamber, and an exhaust pipe, a first intake pipe, and a second intake pipe are provided at the second end, and one of the first and second intake pipes may be connected to a combustible gas source, and the other may be connected to a combustion-supporting gas source, thereby allowing a combustible gas and a combustion-supporting gas to be introduced into the combustion chamber to carry out a combustion reaction. The purge pipe may also be connected to a combustion-supporting gas source, thereby introducing a combustion-supporting gas into the combustion chamber using the purge pipe beforehand to replace the previous gas in the combustion chamber and prevent contamination of the workpiece. Furthermore, if the purge pipe and the connecting pipe are located at the same end of the combustion chamber and the purge pipe is open, the exhaust pipe located at the other end of the combustion chamber may also be open, thereby preventing the previous gas in the combustion chamber and the combustion-supporting gas introduced via the purge pipe from flowing into the process chamber body via the connecting pipe. This prevents the dry oxidation process of the workpiece inside the process chamber, and further improves the processing efficiency and process effect of the wet oxidation process. [Brief explanation of the drawing]

[0010] The drawings described herein are provided to provide a further understanding of the present application and constitute part of the present application. The exemplary embodiments of the present application and their descriptions are for illustrative purposes only and are not intended to constitute an inappropriate limitation of the present application.

[0011] [Figure 1] This is a schematic diagram showing the operating modes of the ignition chamber disclosed in the embodiments of the present application. [Figure 2] This is a schematic diagram showing another operating mode of the ignition chamber disclosed in the embodiments of the present application. [Figure 3] This is a schematic diagram showing the structure of a semiconductor process apparatus disclosed in the embodiments of the present application. [Figure 4] This is a flowchart of the control method disclosed in the embodiments of the present application. [Modes for carrying out the invention]

[0012] The technical means in the embodiments of this application will be described clearly and completely below with reference to the drawings of the embodiments. Clearly, the embodiments described are only a part of the embodiments of this application, not all of them. All other embodiments that a person skilled in the art could obtain based on the embodiments of this application without any creative work are all within the scope of protection of this application.

[0013] The terms "first," "second," etc., used in the specification and claims of this application are for distinguishing similar subjects and are not intended to indicate a specific order or priority. The data used in this manner may be rearranged as appropriate so that the embodiments of this application can be carried out in an order other than that shown or described herein, and the subjects distinguished by "first," "second," etc., are usually of the same type and do not limit the number of subjects; for example, there may be one first subject or multiple subjects. In addition, "and / or" in the specification and claims represents at least one of the connected subjects, and the symbol " / " generally indicates that the preceding and following related subjects are in an "or" relationship.

[0014] As shown in Figures 1 to 3, an embodiment of the present invention discloses an ignition chamber (hereinafter referred to as "ignition chamber") for a semiconductor processing apparatus, which is used as a containment device for a combustion reaction of a combustible gas, thereby burning a combustible gas and a combustion-supporting gas within the ignition chamber to produce materials necessary for the semiconductor processing process, such as water. That is, the ignition chamber can work in cooperation with the process chamber body 500 of the semiconductor processing apparatus to perform the corresponding processing on the semiconductor. As shown in Figures 1 to 3, the ignition chamber includes a combustion chamber 100, a connecting pipe 210, a purge pipe 220, an exhaust pipe 230, a first intake pipe 240, and a second intake pipe 250.

[0015] The combustion chamber 100 is the space in which the combustible gas and combustion-supporting gas specifically carry out the combustion reaction. The combustion chamber 100 may be formed using a high-temperature resistant material such as quartz, and parameters such as the volume and shape of the combustion chamber 100 can be determined according to the actual situation. Naturally, in order to ensure that the combustion effect and efficiency of the combustible gas are relatively high and that the combustion products can be discharged more easily and completely to the outside of the combustion chamber 100, the combustion chamber 100 is usually a linear structure, that is, the two opposite ends of the combustion chamber 100 are arranged along a certain linear direction. The aforementioned linear direction is the axial direction of the combustion chamber 100.

[0016] The connecting pipe 210, the purge pipe 220, the exhaust pipe 230, the first intake pipe 240, and the second intake pipe 250 are all used to transport gas. Naturally, the connecting pipe 210 may also be used to transport combustion products. The parameters such as the diameter of some of the aforementioned pipes can be flexibly determined according to the actual situation and are not limited herein. The connecting pipe 210 may also be formed from a high-temperature resistant material such as quartz or metal, as it is used to transport combustion products at relatively high temperatures.

[0017] Furthermore, in order to ensure that the gas transported into the combustion chamber 100 via the first intake pipe 240 and the second intake pipe 250 undergoes a combustion reaction, it is necessary to heat the gas transported in at least one of the first intake pipe 240 and the second intake pipe 250. In the embodiment of the present application, the flammable gas and combustion-supporting gas, whose temperature exceeds the ignition temperature, may be directly transported into the combustion chamber 100 via the first intake pipe 240 and the second intake pipe 250, thereby allowing the flammable gas and combustion-supporting gas to be mixed and burned in the combustion chamber 100.

[0018] To reduce process complexity and improve combustion reliability, other embodiments of the present invention further include a heating element 400 in the semiconductor process apparatus. By fitting the heating element 400 outside the first intake pipe 240 and the second intake pipe 250, the gas inside the first intake pipe 240 and the second intake pipe 250 can be heated, thereby allowing the temperature of the gas transported into the combustion chamber 100 via the first intake pipe 240 and the second intake pipe 250 to reach the ignition temperature. More specifically, the second intake pipe 250 may be fitted outside the first intake pipe 240, transporting the combustible gas into the combustion chamber 100 via the first intake pipe 240, and transporting the combustion-supporting gas into the combustion chamber 100 via an annular passage between the inner wall of the second intake pipe 250 and the outer wall of the first intake pipe 240, thereby relatively improving the degree of mixing between the combustion-supporting gas and the combustible gas, and improving the combustion efficiency and integrity of the combustible gas. With respect to the openings of the first intake pipe 240 and the second intake pipe 250 that communicate with the respective gas sources, the opening of the first intake pipe 240 may be located at the end, and the opening of the second intake pipe 250 may be located on the side wall of the second intake pipe 250.

[0019] In the process of assembling the ignition chamber, one end of each of the connecting pipe 210 and the purge pipe 220 is connected to the first end of the combustion chamber 100, and the other end of the purge pipe 220 is connected to a combustion-supporting gas source, thereby allowing the combustion-supporting gas to be transported into the combustion chamber 100 via the purge pipe 220, and the combustion-supporting gas may specifically be oxygen gas. The other end of the connecting pipe 210 may also be connected to the process chamber body 500, thereby transporting the combustion products and excess oxygen gas in the combustion chamber 100 to the process chamber body 500 to perform a wet oxidation process.

[0020] Furthermore, one end of each of the exhaust pipe 230, the first intake pipe 240, and the second intake pipe 250 is connected to the second end of the combustion chamber 100 opposite to the first end, and the other end of one of the first intake pipe 240 and the second intake pipe 250 is connected to a flammable gas source, and the other end is connected to a combustion-supporting gas source. This allows the flammable gas and combustion-supporting gas to be transported into the combustion chamber 100, and when the temperature reaches the ignition temperature and the two are mixed in the combustion chamber 100, the flammable gas can be burned. In the embodiment of the present invention, in order to carry out a wet oxidation process, it is ensured that the flammable gas is specifically hydrogen gas, the combustion-supporting gas is specifically oxygen gas, and the combustion products of the flammable gas and combustion-supporting gas are only water. In addition, the oxygen gas introduced into the combustion chamber 100 is in excess, that is, the volume ratio of hydrogen gas to oxygen gas is less than 2:1. More specifically, in some examples, the volume ratio of hydrogen gas to oxygen gas introduced into the combustion chamber 100 may be equal to ensure complete combustion of the hydrogen gas. The exhaust pipe 230 may specifically be connected to the factory's exhaust system, thereby transporting the gas from the combustion chamber 100 discharged through the exhaust pipe 230 to the factory's exhaust system for discharge and treatment.

[0021] Before performing the wet oxidation process using the ignition chamber disclosed in the embodiments of the present application, a combustion-supporting gas may be introduced into the combustion chamber 100 in advance via the purge pipe 220, and the exhaust pipe 230 may be opened, so that the previous gas in the combustion chamber 100 and the introduced combustion-supporting gas are discharged to the outside of the combustion chamber 100 through the exhaust pipe 230, only the combustion-supporting gas is present in the combustion chamber 100, and contamination of the film forming process by other gases or impurities is prevented. In addition, by introducing the combustion-supporting gas into the combustion chamber 100 using the purge pipe 220 and keeping the exhaust pipe 230 in an open state, the gas in the combustion chamber 100 can flow entirely in a direction away from the communication pipe 210, further, the flow of the combustion-supporting gas into the process chamber body 500 communicating with the communication pipe 210 can be greatly reduced, and even prevented, the previous gas in the combustion chamber 100 is basically prevented from flowing into the process chamber body 500, and it can be ensured that the workpiece in the process chamber body 500 basically does not undergo the dry oxidation process.

[0022] In addition, when removing the previous gas and impurities in the combustion chamber 100, in order to prevent the gas and impurities from reacting with oxygen gas to generate other substances such as precipitates that cannot be discharged to the outside of the combustion chamber 100, before introducing oxygen gas through the purge pipe 220, an excess of nitrogen gas is first introduced to replace the previous gas in the combustion chamber 100 with nitrogen gas, and then oxygen gas is introduced into the combustion chamber 100 through the purge pipe 220 to replace the nitrogen gas. In the process of introducing the nitrogen gas, the nitrogen gas can be introduced into the combustion chamber 100 by changing the type of the gas source connected to one of the first intake pipe 240 and the second intake pipe 250. In another embodiment of the present application, nitrogen gas may first be transported into the combustion chamber 100 via the purge pipe 220, so that the flow of nitrogen gas into the process chamber body 500 through the communication pipe 210 can be reduced as much as possible, and even prevented. After the nitrogen gas is continuously introduced for a certain period of time, the gas source connected to the purge pipe 220 is changed, oxygen gas is further transported into the combustion chamber 100, and the nitrogen gas in the combustion chamber 100 may be replaced with oxygen gas.

[0023] Embodiments of the present application disclose an ignition chamber for a semiconductor process apparatus. A communication pipe 210 and a purge pipe 220 are disposed at a first end of a combustion chamber 100 thereof, and an exhaust pipe 230, a first intake pipe 240, and a second intake pipe 250 are disposed at a second end thereof. One of the first intake pipe 240 and the second intake pipe 250 may be in communication with a flammable gas source, and the other may be in communication with a combustion-supporting gas source, such that the flammable gas and the combustion-supporting gas can be introduced into the combustion chamber 100 to perform a combustion reaction. In addition, the purge pipe 220 may also be in communication with the combustion-supporting gas source, such that before the combustion reaction is performed in the ignition chamber, the combustion-supporting gas is introduced into the combustion chamber 100 in advance using the purge pipe 220 to displace the previous gas in the combustion chamber 100 and prevent contamination of the processing target. Further, when the purge pipe 220 and the communication pipe 210 are located at the same end of the combustion chamber 100 and the purge pipe 220 is open, the exhaust pipe 230 located at the other end of the combustion chamber 100 may also be open, such that the previous gas in the combustion chamber 100 and the combustion-supporting gas introduced through the purge pipe 220 will basically not flow into the process chamber main body 500 through the communication pipe 210. As a result, the dry oxidation process of the processing target in the process chamber main body 500 can be prevented, and the processing efficiency and process effect of the wet oxidation process can be further improved.

[0024] Based on the above embodiments, in the process of introducing hydrogen gas into the ignition chamber, when there are many raw materials required for the wet oxidation process, it is necessary to relatively increase the introduction flow rate of the hydrogen gas within the same process time, and further, it is necessary to relatively increase the flow velocity of the hydrogen gas. As a result, part of the hydrogen gas may be transported into the process chamber main body 500 without undergoing a combustion reaction in the ignition chamber, and further react with oxygen gas in the process chamber main body 500 to generate a large amount of heat. This has a significant adverse effect on the temperature uniformity in the process chamber main body 500, and is likely to cause failure of the semiconductor film forming process.

[0025] Therefore, when performing a combustion reaction using the ignition chamber disclosed in the embodiments of the present application, if the flow rate of hydrogen gas is relatively large, a combustion-supporting gas may be introduced through one of the first intake pipe 240 and the second intake pipe 250, and also introduced into the combustion chamber 100 via the purge pipe 220. Since the flow direction of the combustion-supporting gas introduced into the combustion chamber 100 via the purge pipe 220 is opposite to the flow direction of the hydrogen gas, the two gases can be mixed with each other to form turbulence, which can reduce the flow velocity of the hydrogen gas on the one hand, and improve the degree of mixing between the hydrogen gas and the oxygen gas on the other hand. As a result, the combustion rate of the hydrogen gas can be improved, the combustion integrity of the hydrogen gas can be improved, and the problem of hydrogen gas flowing directly to the process chamber body 500 via the connecting pipe 210 without burning in the combustion chamber 100 can be greatly improved and ultimately prevented.

[0026] Furthermore, when introducing combustion-supporting gas into the combustion chamber 100 using the purge pipe 220, the volume ratio of combustible gas and combustion-supporting gas transported into the combustion chamber 100 via the first intake pipe 240 and the second intake pipe 250 may be kept constant, or, depending on the actual situation, the volume of combustion-supporting gas transported into the combustion chamber 100 via the first intake pipe 240 or the second intake pipe 250 may be appropriately reduced. Also, when introducing combustion-supporting gas into the combustion chamber 100 using the purge pipe 220 in conjunction with the combustion-supporting gas, the volume ratio of combustible gas and combustion-supporting gas introduced into the combustion chamber 100 should be kept constant. That is, it is necessary to maintain a constant volume of combustion-supporting gas transported into the combustion chamber 100, always greater than the volume of combustible gas. Furthermore, while the volume of combustible gas and combustion-supporting gas introduced into the combustion chamber 100 is basically constant when the weight of the combustion products required for the process is kept constant, the flow rates of the combustible gas and combustion-supporting gas introduced into the combustion chamber 100 are related to the process time. That is, a relatively large flow rate of combustible gas does not necessarily mean that a large volume of combustible gas is introduced into the combustion chamber 100, and conversely, a relatively small flow rate of combustible gas does not necessarily mean that a small volume of combustible gas is introduced into the combustion chamber 100.

[0027] As described above, the previous gas in the combustion chamber 100 can be replaced by transporting combustion-supporting gas into the combustion chamber 100 using the purge pipe 220. To further improve the efficiency and completeness of removing the previous gas from the combustion chamber 100, the ignition chamber in this embodiment may further include a rectifier plate 300 provided within the combustion chamber 100 and spaced apart from both opposite ends of the combustion chamber 100. That is, in the axial direction of the combustion chamber 100, the rectifier plate 300 is located at a position between the opposite ends of the combustion chamber 100.

[0028] Furthermore, the rectifier plate 300 is provided with a communication hole and a plurality of rectifier holes, both of which penetrate the rectifier plate 300, thereby ensuring that the gases on opposite sides of the rectifier plate 300 flow toward each other. One end of the communication pipe 210 is connected to the communication hole, thereby allowing the combustion products and remaining oxygen gas in the combustion chamber 100 to flow into the communication pipe 210 through the communication hole and ultimately be transported into the process chamber body 500. Furthermore, since each of the rectifier holes penetrates the rectifier plate 300, the purge pipe 220 provided at the first end of the combustion chamber 100 can communicate with the exhaust pipe 230 through the multiple rectifier holes. In addition, the combustion-supporting gas sent out through the purge pipe 220 can flow through the multiple rectifier holes to the side of the rectifier plate 300 away from the purge pipe 220. As a result, the purging effect of the combustion-supporting gas sent out through the purge pipe 220 is relatively improved, and the purging efficiency and effect on the previous gas in the combustion chamber 100 are enhanced.

[0029] Specifically, the rectifier plate 300 may be formed from a high-temperature resistant material such as metal or quartz, and the rectifier plate 300 may be fixed inside the combustion chamber 100 by welding or adhesive. Naturally, the two sides of the rectifier plate 300 that are opposite each other do not necessarily need to be isolated from each other, and for that reason, the rectifier plate 300 does not need to be fixedly connected to the combustion chamber 100, but merely fitted inside the combustion chamber 100.

[0030] Furthermore, when the flow rate of hydrogen gas is relatively high, the flow rectifier plate 300 can rectify the flow of the combustion-supporting gas introduced through the purge pipe 220 when transporting the combustion-supporting gas from the purge pipe 220 to the combustion chamber 100. This further improves the deceleration and rectification effect of the combustion-supporting gas on the hydrogen gas, thereby further improving the complete combustion of the hydrogen gas.

[0031] As described above, the rectifier plate 300 is provided between the two opposite ends of the combustion chamber 100, and in one specific embodiment of the present application, the distance between the rectifier plate 300 and the first end of the combustion chamber 100 may be smaller than the distance between the rectifier plate 300 and the second end of the combustion chamber 100. That is, the distance between the rectifier plate 300 and the purge pipe 220 is smaller than the distance between the rectifier plate 300 and the first intake pipe 240, thereby making the distance between the second end of the combustion chamber 100 and the rectifier plate 300 relatively larger, providing a larger space for the combustion process of hydrogen gas and oxygen gas. Furthermore, the gas transported from the purge pipe 220 into the combustion chamber 100 fills the space between the first end of the combustion chamber 100 and the rectifier plate 300 in the shortest possible time, allowing the combustion-supporting gas to flow relatively uniformly from the multiple rectifier holes on the rectifier plate 300 toward the second end of the combustion chamber 100, thereby improving the uniformity of the distribution of the combustion-supporting gas transported from the purge pipe 220 into the combustion chamber 100.

[0032] In the above embodiment, the combustion chamber 100 may be a linear structure, and the interior of the combustion chamber 100 is a hollow structure that provides space for gas containment and combustion. In one specific embodiment of the present application, the area of ​​any cross-sectional surface distributed along the axial direction of the combustion chamber 100 is all equal, for example, the combustion chamber 100 is a hollow right-angle prism structure.

[0033] In another embodiment of the present application, the combustion chamber 100 includes at least two parts with different cross-sectional areas, specifically the combustion chamber 100 includes a first cylinder 110 and a second cylinder 120. One end of the first cylinder 110 is in communication with a first intake pipe 240, and one end of the second cylinder 120 is in communication with a connecting pipe 210. The first intake pipe 240 can still communicate with the connecting pipe 210 by connecting the other end of the first cylinder 110 to the other end of the second cylinder 120.

[0034] The cross-sectional area of ​​the inner surface of the first cylinder 110 is the first area, and the cross-sectional area of ​​the inner surface of the second cylinder 120 is the second area, with the first area being smaller than the second area. The cross-section is perpendicular to the axial direction of the first cylinder 110 and the second cylinder 120. In other words, in the embodiment of the present application, the cross-sectional area of ​​the inner surface of the portion of the combustion chamber 100 communicating with the first intake pipe 240 and the second intake pipe 250 is relatively small, and the cross-sectional area of ​​the inner surface of the portion of the combustion chamber 100 connected to the connecting pipe 210 is relatively large. As a result, after hydrogen gas and oxygen gas are transported into the combustion chamber 100 from the first intake pipe 240 and the second intake pipe 250, a certain diffusion effect can be generated as they flow through the first cylinder 110, which has a relatively small cross-sectional area, to the second cylinder 120, which has a relatively large cross-sectional area. This improves the degree of mixing between hydrogen gas and oxygen gas, and further enhances the efficiency and integrity of hydrogen gas combustion. Additionally, when the cross-sectional area of ​​the second cylinder 120 is relatively large, the size of the space enclosed by the inner surface of the second cylinder 120 is also relatively large, thereby providing a larger space for the combustion process, preventing the flame generated during the combustion process from coming into close contact with the second cylinder 120, and ultimately extending the service life of the second cylinder 120.

[0035] To further improve the diffusion effect of hydrogen gas and oxygen gas, in the embodiment of the present invention, the combustion chamber 100 further includes a connecting portion 130, the first cylindrical body 110 and the second cylindrical body 120 are connected via the connecting portion 130, and the cross-sectional area of ​​the inner surface of the connecting portion 130 gradually increases from the first area to the second area in the direction from the first cylindrical body 110 to the second cylindrical body 120. That is, in the embodiment of the present invention, the connecting portion 130 has a flared structure, thereby relatively improving the diffusion effect of hydrogen gas and oxygen gas in the combustion chamber 100, and further improving the efficiency and completeness of hydrogen gas combustion. Naturally, in the molding process of the combustion chamber 100, in order to improve its structural strength and reliability, the combustion chamber 100 including the first cylindrical body 110, the second cylindrical body 120, and the connecting portion 130 can be formed at once by a method such as integral sintering.

[0036] To further improve the combustion efficiency and completeness of hydrogen gas and to prevent hydrogen gas from accumulating at the edges and corners of the combustion chamber, in the embodiment of this application, the inner surfaces of both the first cylinder 110 and the second cylinder 120 are cylindrical side-shaped structures. Accordingly, to reduce the difficulty of processing the first cylinder 110 and the second cylinder 120, the outer surfaces of both may also be cylindrical side-shaped structures. By making both the inner and outer surfaces of the connecting portion 130 truncated cone side-shaped structures, the number of blind spots in the combustion chamber 100 can be further reduced. Naturally, parameters such as the inner diameter and outer diameter of the first cylinder 110 and the second cylinder 120 can be flexibly determined according to the actual situation and are not limited in this application.

[0037] As described above, the connecting pipe 210 and the purge pipe 220 are both provided at the first end of the combustion chamber 100, and the first intake pipe 240, the second intake pipe 250, and the exhaust pipe 230 may be provided at the second end of the combustion chamber 100. When the combustion chamber 100 includes the first cylindrical body 110 and the second cylindrical body 120, the size of the first cylindrical body 110 is relatively small, so in order to reduce the difficulty of installing the first intake pipe 240, the second intake pipe 250, and the exhaust pipe 230, the first intake pipe 240 and the second intake pipe 250 may both be connected to the end face of the first cylindrical body 110, and the exhaust pipe 230 may be connected to the side wall of the first cylindrical body 110. As a result, the hydrogen gas and oxygen gas transported into the combustion chamber 100 from the first intake pipe 240 and the second intake pipe 250 both have an initial velocity along the axial direction of the combustion chamber 100, which is advantageous for transporting the combustion products and remaining oxygen gas into the process chamber body 500 via the connecting pipe 210 located at the first end of the combustion chamber 100, and reduces the difficulty of installing the exhaust pipe 230. Furthermore, when the hydrogen gas and oxygen gas are heated by providing a heating element 400 outside the first intake pipe 240 and the second intake pipe 250, it is ensured that the exhaust pipe 230 does not interfere with the installation of the heating element 400.

[0038] Furthermore, in order to ensure that impurity gases in the combustion chamber 100 can be completely discharged to the outside of the combustion chamber 100 through the exhaust pipe 230, the distance between the exhaust pipe 230 and one end of the first cylinder 110 where the first intake pipe 240 is located may be smaller than the distance between the exhaust pipe 230 and one end of the first cylinder 110 away from the first intake pipe 240. In other words, in the process of designing the position of the exhaust pipe 230, it is necessary to bring the exhaust pipe 230 as close as possible to the end of the first cylinder 110 where the first intake pipe 240 is located, that is, to the second end of the entire combustion chamber 100 away from the purge pipe 220.

[0039] Because the size of the second cylinder 120 is relatively large and there is no need to provide other devices outside the connecting pipe 210, in the embodiment of the present application, both the connecting pipe 210 and the purge pipe 220 may be connected to the end face of the second cylinder 120. This makes it easier to install and assemble the combustion chamber 100. In addition, in order to reduce the difficulty of combustion products and remaining oxygen gas generated in the combustion chamber 100 flowing into the connecting pipe 210, in the embodiment of the present application, the connecting pipe 210 may be located in the central region of the second cylinder 120 in a direction perpendicular to the axial direction of the second cylinder 120. This makes it easier for combustion products and gases in the combustion chamber 100 to flow into the connecting pipe 210. Furthermore, the purge pipe 220 may be located outside the connecting pipe 210, thereby ensuring that the purge pipe 220 can properly transport combustion-supporting gas into the combustion chamber 100.

[0040] Based on the ignition chamber of the semiconductor process apparatus disclosed in any of the above embodiments, the embodiment of the present application further discloses a semiconductor process apparatus as shown in Figure 3. The semiconductor process apparatus includes a process chamber body 500 and an ignition chamber of the semiconductor process apparatus disclosed in the above embodiments of the present application, wherein one end of a communication pipe 210 of the ignition chamber, away from the combustion chamber 100, communicates with the process chamber body 500, thereby transporting the combustion products and remaining oxygen gas generated in the combustion chamber 100 into the process chamber body 500 via the communication pipe 210, and performing a wet oxidation process with the workpiece in the process chamber body 500 to form a silicon dioxide thin film on the surface of the workpiece.

[0041] Furthermore, as shown in Figure 4, the embodiments of the present application further disclose a control method applicable to the semiconductor process apparatus disclosed in the above embodiments of the present application, the control method comprising the following steps S1 to S3.

[0042] In step S1, the first intake pipe 240 and the second intake pipe 250 are both closed, and the purge pipe 220 and the exhaust pipe 230 are both opened. That is, before introducing a combustible gas such as hydrogen gas and a combustion-supporting gas such as oxygen gas into the combustion chamber 100 via the first intake pipe 240 and the second intake pipe 250, the combustion chamber 100 is first purged using the purge pipe 220, and the previous gas in the combustion chamber 100 and the purge gas are discharged to the outside of the combustion chamber 100 through the exhaust pipe 230. This significantly reduces, and ultimately prevents, the flow of the purge gas and the previous gas and impurities in the combustion chamber 100 into the process chamber body 500 via the connecting pipe 210, thereby improving process efficiency and success rate.

[0043] In step S2, after a predetermined time has elapsed, the purge pipe 220 and the exhaust pipe 230 are controlled to close. That is, after a predetermined time has elapsed, it can be assumed that the previous gas in the combustion chamber 100 has been continuously introduced into the combustion chamber 100 using the purge pipe 220, and at this time, it is necessary to close the purge pipe 220 and the exhaust pipe 230 in order for the combustion process to proceed normally.

[0044] In step S3, the first intake pipe 240 and the second intake pipe 250 are controlled to open. That is, after removing the previous gas in the combustion chamber 100 using the purge gas introduced through the purge pipe 220, hydrogen gas and oxygen gas are introduced to carry out a combustion reaction in the combustion chamber 100 and generate water vapor. The water vapor and the remaining oxygen gas are transported into the process chamber body 500 via the connecting pipe 210 to carry out a wet oxidation process with the workpiece.

[0045] In the control method disclosed in the embodiments of this application, the purge gas transported into the combustion chamber 100 via the purge pipe 220 includes at least a combustion-supporting gas, i.e., oxygen gas. Furthermore, depending on actual demand, it is possible to confirm whether or not to introduce nitrogen gas into the combustion chamber 100 before introducing oxygen gas via the purge pipe 220. Naturally, the device that provides the control function in the above control method may specifically be a controller.

[0046] During the combustion process, if the hydrogen gas flow rate is relatively high, the hydrogen gas flow velocity is also relatively high. As a result, the hydrogen gas may not burn completely and instead flow through the connecting pipe 210 into the process chamber body 500, where it may react with oxygen gas and generate heat. This can have a significant negative impact on the temperature uniformity within the process chamber body 500 and may lead to the failure of the wet oxidation process.

[0047] Therefore, in the embodiment of the present application, step S3 is further, Step S31 involves controlling both the first intake pipe 240 and the second intake pipe 250 to be open, and if the flow rate of the combustible gas is below a standard flow rate, controlling the purge pipe 220 to be closed. Or, The system includes step S32, which controls both the first intake pipe 240 and the second intake pipe 250 to be open, and controls the purge pipe 220 to be open if the flow rate of the flammable gas is greater than a reference flow rate.

[0048] In other words, in the embodiment of the present invention, the opening and closing state of the purge pipe 220 can be controlled based on the flow rate of the flammable gas (e.g., hydrogen gas). When the flow rate of the flammable gas (e.g., hydrogen gas) is relatively small, the purge pipe 220 is used to not introduce a combustion-supporting gas (e.g., oxygen gas) into the combustion chamber 100, thereby reducing the difficulty of controlling the semiconductor process apparatus. When the flow rate of the flammable gas (e.g., hydrogen gas) is relatively large, the purge pipe 220 is used to introduce a combustion-supporting gas (e.g., oxygen gas) into the combustion chamber 100 in the opposite direction to the flow direction of the flammable gas (e.g., hydrogen gas), thereby improving the combustion efficiency and completeness of the flammable gas (e.g., hydrogen gas) and preventing the flammable gas (e.g., hydrogen gas) from flowing into the process chamber body 500 without burning and affecting the normal progress of the wet oxidation process.

[0049] In this specification, the terms “including,” “containing,” or any variation thereof are intended to cover non-exclusive inclusion, meaning that a process, method, article, or apparatus containing a set of elements includes not only those elements but also other elements not explicitly listed, or further elements inherent to such a process, method, article, or apparatus. Unless further limited, an element limited by the phrase “one…including” does not preclude the existence of other similar elements in a process, method, article, or apparatus containing that element. The scope of methods and apparatuses in embodiments of this application is not limited to performing functions in the order shown or discussed, but may further include performing functions essentially simultaneously or in reverse order based on the relevant functions, for example, the described methods may be performed in an order different from the described order, and various steps may be added, omitted, or combined. Also, features described in some examples may be combined in other examples.

[0050] Although embodiments of the present application have been described above with reference to the drawings, the present application is not limited to the above-described specific embodiments. The above-described specific embodiments are not limiting but merely illustrative. A person skilled in the art can use many forms without departing from the spirit of the present application and the scope of protection of the claims, and all of these fall within the scope of protection of the present application. [Explanation of Symbols]

[0051] 100 combustion chambers 110 1st cylinder 120 2nd cylinder 130 communication part 210 communication pipe 220 purge tube 230 exhaust pipe 240 No. 1 Intake Pipe 250 No. 2 Intake Pipe 300 rectifier plate 400 heating element 500 Process Chamber Body

Claims

1. It includes a combustion chamber, a connecting pipe, a purge pipe, an exhaust pipe, a first intake pipe, and a second intake pipe. One end of the aforementioned connecting pipe and the aforementioned purge pipe is connected to the first end of the combustion chamber, and the other end of the aforementioned purge pipe is connected to a combustion-supporting gas source. One end of each of the exhaust pipe, the first intake pipe, and the second intake pipe is connected to the second end of the combustion chamber opposite to the first end, and the other end of one of the first intake pipe and the second intake pipe is connected to a combustible gas source, and the other end of the other is connected to a combustion-supporting gas source. An ignition chamber for a semiconductor process apparatus, characterized by the following features.

2. The combustion chamber further includes a rectifier plate provided within the combustion chamber, which is spaced apart from both opposite ends of the combustion chamber. The rectifier plate is provided with a communication hole and a plurality of rectifier holes, both of which penetrate the rectifier plate, one end of the communication pipe is in communication with the communication hole, and the purge pipe is in communication with the exhaust pipe via the plurality of rectifier holes. An ignition chamber for a semiconductor process apparatus according to feature 1.

3. The distance between the rectifier plate and the first end of the combustion chamber is smaller than the distance between the rectifier plate and the second end of the combustion chamber. The ignition chamber for the semiconductor process apparatus according to feature 2.

4. The combustion chamber includes a first cylinder and a second cylinder, one end of the first cylinder communicating with the first intake pipe, one end of the second cylinder communicating with the connecting pipe, the other end of the first cylinder communicating with the other end of the second cylinder, the cross-sectional area of ​​the inner surface of the first cylinder being a first area, the cross-sectional area of ​​the inner surface of the second cylinder being a second area, and the first area being smaller than the second area. An ignition chamber for a semiconductor process apparatus according to feature 1.

5. The combustion chamber further includes a communication section, the first cylinder and the second cylinder are connected via the communication section, and in the direction from the first cylinder to the second cylinder, the cross-sectional area of ​​the inner surface of the communication section gradually increases from the first area to the second area. The ignition chamber for the semiconductor process apparatus according to feature 4.

6. The inner surface of the first cylinder and the inner surface of the second cylinder both have a cylindrical side surface structure, and the inner surface of the connecting portion has a frustoconical side surface structure. The ignition chamber for the semiconductor process apparatus according to feature 5.

7. The first intake pipe and the second intake pipe are both connected to the end face of the first cylinder, the exhaust pipe is connected to the side wall of the first cylinder, and in the axial direction of the first cylinder, the distance between the exhaust pipe and the end of the first cylinder where the first intake pipe is located is smaller than the distance between the exhaust pipe and the end of the first cylinder away from the first intake pipe. Both the connecting pipe and the purging pipe are connected to the end face of the second cylindrical body, and in a direction perpendicular to the axial direction of the second cylindrical body, the connecting pipe is located in the central region of the second cylindrical body, and the purging pipe is located outside the connecting pipe. The ignition chamber for the semiconductor process apparatus according to feature 4.

8. The process chamber body and the ignition chamber of the semiconductor process apparatus according to any one of claims 1 to 7 are included. One end of the aforementioned connecting pipe, away from the combustion chamber, communicates with the process chamber body. Semiconductor process equipment.

9. A control method applicable to a semiconductor process apparatus according to claim 8, The steps include controlling the system to close both the first intake pipe and the second intake pipe, and to open both the purge pipe and the exhaust pipe, A step of controlling the system to close the purge pipe and the exhaust pipe after a predetermined time has elapsed, The process includes the step of controlling both the first intake pipe and the second intake pipe to be opened, A control method characterized by the following:

10. The step of controlling both the first intake pipe and the second intake pipe to be open is: A step of controlling both the first intake pipe and the second intake pipe to be open, and if the flow rate of the flammable gas is below a standard flow rate, controlling the purge pipe to be closed, or The procedure includes controlling both the first intake pipe and the second intake pipe to be open, and if the flow rate of the flammable gas is greater than a standard flow rate, controlling the purge pipe to be open. The control method according to feature 9.

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