Coated substrates and related methods

Abstract

A ceramic article and a method for forming a ceramic article are provided. The method includes one or more of the following steps: obtaining a substrate having at least one defect; contacting a substrate with at least a first precursor under deposition conditions to form a coated substrate having a first coating on the substrate, wherein the coated substrate has a surface roughness value less than the surface roughness value of a substrate without the first coating; polishing at least a portion of the surface of the substrate to obtain a substrate having a polished surface; contacting the substrate with a vaporized fluorine-containing precursor to fluorinate the surface of the substrate; and contacting a substrate with at least a second precursor under deposition conditions to form a second coated substrate having a second coating on the substrate.

Description

[Technical Field]

[0001] Cross-reference with related applications This application claims the benefit of priority to U.S. Provisional Patent Application No. 63 / 543,017, filed on 6 October 2023, which is incorporated herein by reference in its entirety for any purpose.

[0002] This disclosure relates to coated substrates and related methods. [Background technology]

[0003] Ceramic substrates can have various defects. When used in microelectronics and semiconductor manufacturing, the presence of these defects in ceramic substrates can lead to undesirable properties and / or performance problems. [Overview of the project]

[0004] Some embodiments relate to methods for forming ceramic articles. In some embodiments, the method for forming a ceramic article includes obtaining a ceramic substrate having at least one defect. In some embodiments, the method for forming a ceramic article includes contacting a ceramic substrate with at least a first precursor under deposition conditions to form a coated ceramic substrate. In some embodiments, the coated ceramic substrate has a surface roughness less than that of an uncoated ceramic substrate. In some embodiments, the method for forming a ceramic article includes polishing at least a portion of the surface of a ceramic substrate to obtain a ceramic substrate having a polished surface. In some embodiments, the method for forming a ceramic article includes contacting a ceramic substrate with a vaporized fluorine-containing precursor to fluorinate the surface of the ceramic substrate. In some embodiments, the method for forming a ceramic article includes contacting a ceramic substrate with at least a second precursor under deposition conditions to form a second coating on the ceramic substrate.

[0005] Some embodiments of this disclosure are described herein merely as examples, with reference to the accompanying drawings. A detailed and specific reference to the drawings hereto emphasizes that the embodiments shown are illustrative and for illustrative purposes only. In this regard, a description in conjunction with the drawings will make it clear to those skilled in the art how embodiments of this disclosure may be carried out. [Brief explanation of the drawing]

[0006] [Figure 1] This is a flowchart of a method for manufacturing an article, according to several embodiments. [Figure 2] This is a schematic diagram illustrating a method for manufacturing an article according to several embodiments. [Figure 3] These are focused ion beam (FIB) images of coated substrates described herein, according to various embodiments. [Figure 4A] These are some images of substrates before coating, taken with a laser confocal microscope at 50x magnification. [Figure 4B] These are some images of coated substrates, taken with a laser confocal microscope at 50x magnification. [Modes for carrying out the invention]

[0007] Among these disclosed benefits and improvements, other purposes and advantages of this disclosure will become apparent from the following description in conjunction with the accompanying drawings. While detailed embodiments of this disclosure are disclosed herein, it should be understood that the disclosed embodiments are merely illustrative examples of the various forms in which this disclosure may be embodied. Furthermore, each of the examples given with respect to the various embodiments of this disclosure is intended to be illustrative and not limiting.

[0008] Any prior patents and publications referenced herein are incorporated in their entirety by reference.

[0009] Throughout this specification and the claims, the following terms have the meanings expressly associated herein unless otherwise clearly indicated by the context. The phrases “in one embodiment,” “in an embodiment,” and “in some embodiments” as used herein may refer to, but not necessarily, the same embodiment. Furthermore, the phrases “in another embodiment” and “in some other embodiments” as used herein may refer to, but not necessarily, different embodiments. All embodiments of this disclosure are intended to be combinatorial without departing from the scope or spirit of this disclosure.

[0010] When used herein, the surface roughness value Sa This refers to the arithmetic mean height. In some embodiments, the arithmetic mean height is an absolute value. In some embodiments, the arithmetic mean height is the difference in height of each surface feature compared to the arithmetic mean of the surface.

[0011] As used herein, the term "based on" is not exclusive and, unless otherwise explicitly indicated by the context, allows for the use of additional factors not listed. In addition, throughout this specification, the meanings of "a," "an," and "the" include multiple references. The meaning of "in" includes "inside" and "on top of."

[0012] Some embodiments relate to coated ceramic substrates and related methods. In some embodiments, a method for forming a defect-free substrate is provided. In some embodiments, the method comprises forming a coating on a substrate having one or more defects. Non-limiting examples of defects include, but are not limited to, surface defects such as open pores, surface pits, scratches, and etching lines. In some embodiments, the method for forming a defect-free substrate involves fewer steps than conventional methods, such as, but are not limited to, conventional methods for forming pit-free high-frequency windows. In some embodiments, the method for forming a defect-free substrate reduces the amount of material removed compared to conventional methods. In some embodiments, the method for forming a defect-free substrate facilitates compliance with specifications and allows for the repair and / or reworking of the substrate.

[0013] The coatings disclosed herein may be formed on a substrate via one or more deposition processes. Examples of non-limiting deposition processes include, but are not limited to, chemical vapor deposition (CVD), physical vapor deposition (PVD), digital or pulsed chemical vapor deposition, plasma-enhanced periodic chemical vapor deposition (PECCVD), fluid chemical vapor deposition (FCVD), atomic layer deposition (ALD), thermal atomic layer deposition, plasma-enhanced atomic layer deposition (PEALD), metal-organic chemical vapor deposition (MOCVD), plasma-enhanced chemical vapor deposition (PECVD), or at least one of any combination thereof. It will be understood that other deposition processes may be used without departing from the scope of this disclosure.

[0014] Figure 1 is a flowchart of a method 100 for coating a substrate according to several embodiments. As shown in Figure 1, the method 100 for coating a substrate may include one or more of the following steps: obtaining a substrate having at least one defect 102; contacting the substrate with at least a first precursor under deposition conditions to form a first coating on the substrate 104; polishing at least a portion of the surface of the substrate to obtain a substrate having a polished surface 106; contacting the substrate with a vaporized fluorine-containing precursor to fluorinate the surface of the substrate 108; and contacting the substrate with at least a second precursor under deposition conditions to form a second coating on the substrate 110.

[0015] In step 102, in some embodiments, method 100 includes obtaining a substrate having at least one defect. In some embodiments, the substrate includes at least one of silicon dioxide, aluminum oxide, magnesium oxide, yttrium oxide, hafnium oxide, zirconium oxide, aluminum nitride, silicone nitride, boron nitride, titanium nitride, boron nitride, silicon carbide, titanium carbide, porcelain, ferrite, steatite, cordierite, mullite, or any combination thereof. In some embodiments, the substrate includes alumina. In some embodiments, the substrate includes yttria. In some embodiments, the substrate includes titania. In some embodiments, the substrate includes zirconia. In some embodiments, the substrate includes silicon carbide. In some embodiments, the substrate includes aluminum nitride. In some embodiments, the substrate is a ceramic substrate. In some embodiments, the substrate includes an alumina substrate. In some embodiments, the substrate includes Al2O3. In some embodiments, the substrate includes at least one of Si, Co, Cu, Al, W, WN, WC, TiN, Mo, MoC, SiO2, W, SiN, WCN, Al2O3, AlN, ZrO2, La2O3, TaN, RuO2, IrO2, Nb2O3, Y2O3, hafnium oxide, or any combination thereof.

[0016] A defect may include features that result in an undesirable property, characteristic, or aspect of a substrate or a product containing a substrate (e.g., a product obtained after processing a substrate). In some embodiments, at least one defect includes at least one of pores, pits, scratches, etching lines, cracks, material embedding, perforations, pinholes, or any combination thereof.

[0017] The substrate, before coating and / or before coating (e.g., an uncoated substrate), has a surface roughness value S of 1.3 μm or greater. a In some embodiments, the uncoated substrate has a surface roughness value S of 1.3 μm to 10 μm, or any range or partial range between 1.3 μm and 10 μm. aIn some embodiments, the uncoated substrate has thicknesses of 1.3μm~10μm, 1.3μm~9.5μm, 1.3μm~9μm, 1.3μm~8.5μm, 1.3μm~8μm, 1.3μm~7.5μm, 1.3μm~7μm, 1.3μm~6.5μm, 1.3μm~6μm, 1.3μm~5.5μm, 1.3μm~5μm, 1.3μm~4.5μm, 1.3μm~4μm, 1.3μm~3.5μm, 1.3μm~3μm, 1.3μm~2.5μm, 1.3μm~ 2μm, 1.3μm~1.9μm, 1.3μm~1.8μm, 1.3μm~1.7μm, 1.3μm~1.6μm, 1.3μm~1.5μm, 1.3μm~1.4μm, 1.5μm~2μm, 1.6μm~2μm, 1.7μm~2 Surface roughness value S of μm, 1.8μm~2μm, 1.9μm~2μm, 2μm~10μm, 3μm~10μm, 4μm~10μm, 5μm~10μm, 6μm~10μm, 7μm~10μm, 8μm~10μm, or 9μm~10μm a In some embodiments, the uncoated substrate has a surface roughness value S of 0.2 or less, or any range or partial range between 0.001 and 0.2. a In some embodiments, the uncoated substrate has a surface roughness value S of 7.5 or less, or any range or partial range between 0.5 and 7.5. z It has.

[0018] In operation 104, in some embodiments, the method 100 comprises contacting a substrate with at least a first precursor under deposition conditions to form a first coating on the substrate. In some embodiments, the deposition conditions are vapor phase deposition conditions, and the first precursor comprises a first vaporized precursor. In some embodiments, for example, the contacting comprises flowing the first vaporized precursor into a chamber containing the substrate. In some embodiments, the contacting comprises introducing the first vaporized precursor into a chamber containing the substrate. In some embodiments, the contacting comprises vaporizing the first precursor to obtain the first vaporized precursor. In some embodiments, the contacting comprises pumping the first vaporized precursor into a chamber containing the substrate. In some embodiments, the contacting comprises exposing the substrate to the first vaporized precursor. In some embodiments, the contacting comprises supplying the first vaporized precursor to a chamber containing the substrate. In some embodiments, the contacting comprises forming the first coating on the substrate.

[0019] The first precursor may include a precursor suitable for forming a first coating on a substrate. In some embodiments, for example, the first vaporization precursor may include a vaporization precursor suitable for forming a first coating on a substrate. In some embodiments, the first vaporization precursor is derived from a solid precursor via a process for forming vapor and / or gas. In some embodiments, the first vaporization precursor includes at least one of a metal-containing precursor, an organometallic precursor, or any combination thereof. In some embodiments, the first vaporization precursor includes at least one of an alumina precursor vapor, an yttria precursor vapor, or any combination thereof. As used herein, the term “alumina precursor” refers to a substance that can be deposited to form a layer of alumina. As used herein, the term “yttria precursor” refers to a substance that can be deposited to form a layer of yttria. In some embodiments, the first vaporization precursor comprises at least one of AlCl3, Al(CH3)3, Al(OCH(CH3)2), Al(acetylacetonate)3, 2,2,6,6-tetramethyl-3,5-octanedionate (TMOD)yttrium, yttrium acetate hydrate (e.g., Y(O2CCH3)3.4H2O), yttrium-stabilized ZrO2, yttrium(III) acetylacetonate (Y(acac)3), yttrium(III) hexafluoroacetylacetonate (Y(acacF6)3), yttrium(III) tris(2,2,6,6-tetramethyl-3,5-heptadionate) (Y(tmhd)3), their hydrates (e.g., their dihydrates), or any combination thereof. In some embodiments, the first vaporization precursor is yttrium(III) acetylacetonate hydrate, yttrium(III) hexafluoroacetylacetonate dihydrate, Y(C5H7O2)3· n It contains H2O (where n is between 1 and 10), or at least one of any combination thereof.

[0020] In some embodiments, the substrate is further contacted with at least one co-reactant precursor. In some embodiments, the at least one co-reactant precursor comprises at least one of an oxidizing gas, a reducing gas, a hydrocarbon, or any combination thereof. The at least one co-reactant precursor can be selected to obtain a desired film. In some embodiments, the at least one co-reactant precursor may comprise at least one of N2, H2, NH3, N2H4, CH3HNNH2, CH3HNNHCH3, NCH3H2, NCH3CH2H2, N(CH3)2H, N(CH3CH2)2H, N(CH3)3, N(CH3CH2)3, Si(CH3)2NH, pyrazoline, pyridine, ethylenediamine, or any combination thereof. In some embodiments, the at least one co-reactant precursor may comprise at least one of H2, O2, O3, H2O, H2O2, NO, N2O, NO2, CO, CO2, a carboxylic acid, an alcohol, a diol, air, or any combination thereof. In some embodiments, the at least one co-reactant precursor comprises at least one of methane, ethane, ethylene, acetylene, or any combination thereof. In some embodiments, the at least one co-reactant precursor may be obtained in a container or other vessel where the at least one co-reactant precursor is vaporized. In some embodiments, the at least one co-reactant precursor is a vaporized co-reactant precursor. In some embodiments, the method further comprises an inert gas, such as at least one of argon, helium, nitrogen, or any combination thereof.

[0021] In some embodiments, the method includes vaporizing a precursor. Vaporizing may include heating the precursor to a degree sufficient to obtain a vaporized precursor. In some embodiments, vaporizing may include heating a container containing the precursor. In some embodiments, vaporizing may include heating the precursor in a deposition chamber in which a vapor-phase deposition process is performed. In some embodiments, vaporizing may include heating a conduit for delivering the precursor, vaporized precursor, or any combination thereof to, for example, the deposition chamber. In some embodiments, vaporizing may include operating a vapor delivery system containing the precursor. In some embodiments, vaporizing may include heating the precursor to a temperature sufficient to vaporize it in order to obtain a vaporized precursor. In some embodiments, vaporizing may include heating to a temperature below the decomposition temperature of at least one of the precursor, vaporized precursor, or any combination thereof. In some embodiments, the precursor may be present in the gas phase, in which case step 106 is optional and not required. For example, the precursor may include a vaporized precursor.

[0022] In some embodiments, the method includes vaporizing at least one co-reactant precursor. In some embodiments, vaporizing may include heating at least one co-reactant precursor to a degree sufficient to obtain at least one vaporized co-reactant precursor. In some embodiments, vaporizing may include heating a vessel containing at least one co-reactant precursor. In some embodiments, vaporizing may include heating at least one co-reactant precursor in a deposition chamber in which a vapor-phase deposition process is performed. In some embodiments, vaporizing may include heating a conduit for delivering at least one co-reactant precursor, at least one vaporized co-reactant precursor, or any combination thereof to, for example, the deposition chamber. In some embodiments, vaporizing may include operating a vapor delivery system containing at least one co-reactant precursor. In some embodiments, vaporizing may include heating at least one co-reactant precursor to a temperature sufficient to vaporize it in order to obtain at least one vaporized co-reactant precursor. In some embodiments, vaporization may involve heating to a temperature below the decomposition temperature of at least one of the co-reactant precursors, at least one vaporized co-reactant precursor, or any combination thereof. In some embodiments, at least one co-reactant precursor may be present in the gas phase, in which case this step is optional and not required. For example, at least one co-reactant precursor may include at least one vaporized co-reactant precursor.

[0023] Contacting can be performed within any system, apparatus, device, assembly, chamber, or component thereof that is suitable for a deposition process (e.g., a vapor deposition process), including, but not limited to, a chamber or a deposition chamber. The first precursor and at least one co-reactant precursor may be brought into contact with the substrate simultaneously or at different times. For example, each of the first precursor, at least one co-reactant precursor, and the substrate may be present in the deposition chamber at the same time. That is, in some embodiments, contacting may include bringing the first precursor and at least one co-reactant precursor into contact with the substrate simultaneously, i.e., simultaneous contact. Alternatively, each of the first precursor and at least one co-reactant precursor may be present in the deposition chamber at different times. That is, in some embodiments, contacting may include alternating and / or sequential contact, in one or more cycles, bringing the first precursor into contact with the substrate, followed by bringing the at least one co-reactant precursor into contact with the substrate.

[0024] Deposition conditions may include conditions for gas-phase deposition processes. Examples of gas-phase deposition conditions include, but are not limited to, conditions for gas-phase deposition processes that include chemical vapor deposition (CVD), physical vapor deposition (PVD), digital or pulsed chemical vapor deposition, plasma-enhanced periodic chemical vapor deposition (PECCVD), fluid chemical vapor deposition (FCVD), atomic layer deposition (ALD), thermal atomic layer deposition, plasma-enhanced atomic layer deposition (PEALD), metal-organic chemical vapor deposition (MOCVD), plasma-enhanced chemical vapor deposition (PECVD), or at least one of any combination thereof.

[0025] Deposition conditions may include a deposition temperature. The deposition temperature may be lower than the thermal decomposition temperature of the first precursor, at least one co-reactant precursor, or any combination thereof. The deposition temperature may be high enough to reduce or avoid condensation of the first precursor, at least one co-reactant precursor, or any combination thereof. In some embodiments, the substrate may be heated to the deposition temperature. In some embodiments, the chamber or other vessel in which the substrate is brought into contact with the first precursor and at least one co-reactant precursor is heated to the deposition temperature. In some embodiments, at least one of the first precursor, at least one co-reactant precursor, or any combination thereof may be heated to the deposition temperature.

[0026] The deposition temperature can be between 200°C and 2500°C. In some embodiments, the deposition temperature can be between 500°C and 700°C. For example, in some embodiments, the deposition temperature can be between 500°C and 680°C, 500°C and 660°C, 500°C and 640°C, 500°C and 620°C, 500°C and 600°C, 500°C and 580°C, 500°C and 560°C, 500°C and 540°C, 500°C and 520°C, 520°C and 700°C, 540°C and 700°C, 560°C and 700°C, 580°C and 700°C, 600°C and 700°C, 620°C and 700°C, 640°C and 700°C, 660°C and 700°C, or 680°C and 700°C. In other embodiments, the deposition temperature is, for example, not limited to, 400°C to 2000°C, 500°C to 2000°C, 550°C to 2400°C, 600°C to 2400°C, 625°C to 2400°C, 650°C to 2400°C, 675°C to 2400°C, 700°C to 2400°C, 725°C to 2400°C, 750°C to 2400°C, 775°C to 2400°C, and 800°C to 240°C. 0℃, 825℃~2400℃, 850℃~2400℃, 875℃~2400℃, 900℃~2400℃, 925℃~2400℃, 950℃~2400℃, 975℃~2400℃, 1000℃~2400℃, 1025℃~2400℃, 1050℃~2400℃, 1075℃~2400℃, 1100℃~2400℃, 1200℃~2400℃, 130 0℃~2400℃, 1400℃~2400℃, 1500℃~2400℃, 1600℃~2400℃, 1700℃~2400℃, 1800℃~2400℃, 1900℃~2400℃, 2000℃~2400℃, 2100℃~2400℃, 2200℃~2400℃, 2300℃~2400℃, 500℃~2000℃, 500℃~1900℃, 500℃ Temperatures can range from over 200°C to 2500°C, such as ~1800°C, 500°C~1700°C, 500°C~1600°C, 500°C~1500°C, 500°C~1400°C, 500°C~1300°C, 500°C~1200°C, 500°C~1100°C, 500°C~1000°C, 500°C~1000°C, 500°C~900°C, or 500°C~800°C.

[0027] The deposition conditions may include deposition pressure. In some embodiments, the deposition pressure may include the vapor pressure of at least one of the first precursor, at least one co-reactant precursor, or any combination thereof. In some embodiments, the deposition pressure may include chamber pressure.

[0028] The deposition pressure can range from 0.001 Torr to 100 Torr. For example, in some embodiments, the deposition pressure can be 1 Torr to 30 Torr, 1 Torr to 25 Torr, 1 Torr to 20 Torr, 1 Torr to 15 Torr, 1 Torr to 10 Torr, 5 Torr to 50 Torr, 5 Torr to 40 Torr, 5 Torr to 30 Torr, 5 Torr to 20 Torr, or 5 Torr to 15 Torr. In other embodiments, the deposition pressure is 1 Torr~100 Torr, 5 Torr~100 Torr, 10 Torr~100 Torr, 15 Torr~100 Torr, 20 Torr~100 Torr, 25 Torr~100 Torr, 30 Torr~100 Torr, 35 Torr~100 Torr, 40 Torr~100 Torr, 45 Torr~100 Torr, 50 Torr~100 Torr, 55 Torr~100 Torr, 60 Torr~1 The pressure can be 00 Torr, 65 Torr to 100 Torr, 70 Torr to 100 Torr, 75 Torr to 100 Torr, 80 Torr to 100 Torr, 85 Torr to 100 Torr, 90 Torr to 100 Torr, 95 Torr to 100 Torr, 1 Torr to 95 Torr, 1 Torr to 90 Torr, 1 Torr to 85 Torr, 1 Torr to 80 Torr, 1 Torr to 75 Torr, or 1 Torr to 70 Torr. In other further embodiments, the deposition pressure may be a pressure of 1mTorr~100mTorr, 1mTorr~90mTorr, 1mTorr~80mTorr, 1mTorr~70mTorr, 1mTorr~60mTorr, 1mTorr~50mTorr, 1mTorr~40mTorr, 1mTorr~30mTorr, 1mTorr~20mTorr, 1mTorr~10mTorr, 100mTorr~300mTorr, 150mTorr~300mTorr, 200mTorr~300mTorr, or 150mTorr~250mTorr, or 150mTorr~225mTorr.

[0029] In some embodiments, the first coating includes yttria, fluorinated yttria, alumina, or any combination thereof. In some embodiments, the first coating includes at least one of Al2O3, Y2O3, or any combination thereof. In some embodiments, the first coating is a ceramic coating. In some embodiments, the first coating includes a mixed oxide coating. In some embodiments, the mixed oxide coating includes yttrium aluminum oxide (YAO).

[0030] In some embodiments, the first coating is in direct contact with the substrate. In some embodiments, the first coating fills at least one of the at least one defects present on the substrate. In some embodiments, the coated substrate has a surface roughness less than that of a substrate without the first coating. In some embodiments, the surface roughness of the coated substrate is 5% to 60%, or any range or partial range between 5% and 60%, smaller than the surface roughness value of a substrate without the first coating. In some embodiments, the surface roughness of the coated substrate is 5% to 60%, 5% to 55%, 5% to 50%, 5% to 45%, 5% to 40%, 5% to 35%, 5% to 30%, 5% to 25%, 5% to 20%, 5% to 15%, 5% to 10%, 10% to 60%, 15% to 60%, 20% to 60%, 25% to 60%, 30% to 60%, 35% to 60%, 40% to 60%, 45% to 60%, 50% to 60%, or 55% to 60% smaller than the surface roughness value of the substrate without the first coating.

[0031] In some embodiments, the coated substrate has a surface roughness value S of less than 1.3 μm. ahas. In some embodiments, the coated substrate has a surface roughness value S of 0.1 μm to 1.3 μm, 0.1 μm to 1.2 μm, 0.1 μm to 1.1 μm, 0.1 μm to 1 μm, 0.1 μm to 0.9 μm, 0.1 μm to 0.8 μm, 0.1 μm to 0.7 μm, 0.1 μm to 0.6 μm, 0.1 μm to 0.5 μm, 0.1 μm to 0.4 μm, 0.1 μm to 0.3 μm, 0.1 μm to 0.2 μm, 0.2 μm to 1.3 μm, 0.3 μm to 1.3 μm, 0.4 μm to 1.3 μm, 0.5 μm to 1.3 μm, 0.6 μm to 1.3 μm, 0.7 μm to 1.3 μm, 0.8 μm to 1.3 μm, 0.9 μm to 1.3 μm, 1 μm to 1.3 μm, 1.1 μm to 1.3 μm, or 1.2 μm to 1.3 μm a has.

[0032] In some embodiments, the first coating is a non-sintered coating.

[0033] The first coating may have a thickness of 1 μm to 30 μm, or any range or partial range between 1 μm and 30 μm. In some embodiments, the first coating may have thicknesses of 1 μm to 29 μm, 1 μm to 28 μm, 1 μm to 27 μm, 1 μm to 26 μm, 1 μm to 25 μm, 1 μm to 24 μm, 1 μm to 23 μm, 1 μm to 22 μm, 1 μm to 21 μm, 1 μm to 20 μm, 1 μm to 19 μm, 1 μm to 18 μm, 1 μm to 17 μm. μm, 1μm~16μm, 1μm~15μm, 1μm~14μm, 1μm~13μm, 1μm~12μm, 1μm~11μm, 1μm~10μm, 1μm m~9μm, 1μm~8μm, 1μm~7μm, 1μm~6μm, 1μm~5μm, 1μm~4μm, 1μm~3μm, 1μm~2μm, 2μm~30μ m, 3μm~30μm, 4μm~30μm, 5μm~30μm, 6μm~30μm, 7μm~30μm, 8μm~30μm, 9μm~30μm, 10μm m~30μm, 11μm~30μm, 12μm~30μm, 13μm~30μm, 14μm~30μm, 15μm~30μm, 16μm~30μm, 17 It has a thickness of μm~30μm, 18μm~30μm, 19μm~30μm, 20μm~30μm, 21μm~30μm, 22μm~30μm, 23μm~30μm, 24μm~30μm, 25μm~30μm, 26μm~30μm, 27μm~30μm, 28μm~30μm, or 29μm~30μm.

[0034] In step 106, in some embodiments, the method includes polishing at least a portion of the surface of a substrate in order to obtain a substrate having a polished surface.

[0035] In some embodiments, polishing includes polishing by a mechanical process. In some embodiments, polishing includes polishing by a chemical mechanical process. In some embodiments, polishing includes chemical mechanical planarization. In some embodiments, polishing includes contacting the substrate with a solution. In some embodiments, polishing includes contacting the substrate with a slurry. In some embodiments, polishing includes contacting the substrate with an abrasive. In some embodiments, polishing includes contacting the substrate with a polishing pad. In some embodiments, polishing includes contacting the substrate with a grinding pad. In some embodiments, the solution and / or slurry contains a substance corrosive to the substrate.

[0036] In step 108, in some embodiments, the method includes contacting the substrate with a vaporized fluorine-containing precursor in order to fluorinate the surface of the substrate.

[0037] In some embodiments, contacting includes flowing a vaporized fluorine-containing precursor into a chamber containing a substrate. In some embodiments, contacting includes introducing a vaporized fluorine-containing precursor into a chamber containing a substrate. In some embodiments, contacting includes vaporizing the fluorine-containing precursor to obtain a vaporized fluorine-containing precursor. In some embodiments, contacting includes pumping the vaporized fluorine-containing precursor into a chamber containing a substrate. In some embodiments, contacting includes exposing the substrate to the vaporized fluorine-containing precursor. In some embodiments, contacting includes supplying the vaporized fluorine-containing precursor to a chamber containing a substrate. In some embodiments, the vaporized fluorine-containing precursor is derived from a fluorine component. In some embodiments, the fluorine component reacts with or is reactive with at least one of the substrate, the first coating, or any combination thereof.

[0038] In some embodiments, the fluorine component comprises a molecular fluorine source vapor that can be derived from a liquid or solid. In some embodiments, the fluorine component comprises molecular fluorine. In some embodiments, the fluorine component is not ionic, substantially non-ionic, not treated to form a plasma (e.g., by adding energy other than heat), or any combination thereof. In some embodiments, the fluorine component comprises at least one of a fluorinated organic compound, a total fluorinated organic compound, or any combination thereof. In some embodiments, for example, the fluorine component comprises at least one of a fluorinated alkane, a total fluorinated alkane, a fluorinated alkene, a total fluorinated alkene, or any combination thereof (one or more of these may be linear or branched). In some embodiments, the fluorine-containing vapor comprises at least one of CF4, C2F4, C3F6, C4F8, CHF3, C2H2F2, C2F6, HF, CH3F, or any combination thereof.

[0039] In some embodiments, the fluorine component comprises a vaporized fluorinated polymer. In some embodiments, obtaining a reactive vapor, for example, involves heating the fluorinated polymer to a temperature sufficient to vaporize at least a portion of the fluorinated polymer. In some embodiments, the fluorine component comprises a gaseous fluorinated polymer derived from a non-gaseous fluorinated polymer (e.g., a solid-phase or liquid-phase fluorinated polymer). In some embodiments, the fluorinated polymer comprises a homopolymer or copolymer. In some embodiments, the fluorinated polymer comprises a copolymer of at least one fluoroolefin monomer and optionally at least one non-fluorinated comonomer. In some embodiments, the fluorinated polymer may be fluorinated (i.e., partially fluorinated), fully fluorinated, or may contain a non-fluorinated halogen atom such as chlorine, for example, but not limited to these. In some embodiments, the molecular fluorine source may be liquid or solid at room temperature but vaporizes at the process temperature disclosed herein. Non-limiting examples of fluoropolymers include, but are not limited to, polymerized perfluoroalkylethylenes having C1-C10 perfluoroalkyl groups, polytetrafluoroethylene (PTFE), tetrafluoroethylene / perfluoro(alkyl vinyl ether) copolymer (PFA), tetrafluoroethylene / hexafluoropropylene copolymer (FEP), tetrafluoroethylene / perfluoro(alkyl alkenyl ether) / hexafluoropropylene copolymer (EPA), polyhexafluoropropylene, ethylene / tetrafluoroethylene copolymer (ETFE), polytrifluoroethylene, polyvinylidene fluoride (PVDF), polyvinyl fluoride (PVF), polychlorotrifluoroethylene (PCTFE), ethylene / chlorotrifluoroethylene copolymer (ECTFE), or at least one of any combination thereof.

[0040] In step 110, in some embodiments, the method includes contacting a ceramic substrate with at least a second precursor under deposition conditions to form a second coating on the substrate. In some embodiments, the deposition conditions include gas phase deposition conditions, and the second precursor includes a second vaporization precursor. In some embodiments, for example, contacting includes flowing the second vaporization precursor into a chamber containing the substrate. In some embodiments, contacting includes introducing the second vaporization precursor into a chamber containing the substrate. In some embodiments, contacting includes vaporizing the second precursor to obtain a second vaporization precursor. In some embodiments, contacting includes pumping the second vaporization precursor into a chamber containing the substrate. In some embodiments, contacting includes exposing the substrate to the second vaporization precursor. In some embodiments, contacting includes supplying the second vaporization precursor to a chamber containing the substrate. In some embodiments, contacting includes forming a second coating on the substrate.

[0041] The second precursor may include a precursor suitable for forming a second coating on a substrate. In some embodiments, the second vaporization precursor may include a vaporization precursor suitable for forming a second coating on a substrate. In some embodiments, the second vaporization precursor is derived from a solid precursor via a process for forming vapor and / or gas. In some embodiments, the second vaporization precursor includes at least one of a metal-containing precursor, an organometallic precursor, or any combination thereof. In some embodiments, the second vaporization precursor includes at least one of AlCl3, Al(CH3)3, Al(OCH(CH3)2), Al(acetylacetonate)3, or any combination thereof.

[0042] In some embodiments, the substrate is further brought into contact with at least one co-reactant precursor. In some embodiments, the at least one co-reactant precursor includes at least one of an oxidizing gas, a reducing gas, a hydrocarbon, or any combination thereof. The at least one co-reactant precursor may be selected to obtain a desired film. In some embodiments, the at least one co-reactant precursor may include at least one of N2, H2, NH3, N2H4, CH3HNNH2, CH3HNNHCH3, NCH3H2, NCH3CH2H2, N(CH3)2H, N(CH3CH2)2H, N(CH3)3, N(CH3CH2)3, Si(CH3)2NH, pyrazoline, pyridine, ethylenediamine, or any combination thereof. In some embodiments, the at least one co-reactant precursor may include at least one of H2, O2, O3, H2O, H2O2, NO, N2O, NO2, CO, CO2, carboxylic acids, alcohols, diols, air, or any combination thereof. In some embodiments, the at least one co-reactant precursor may include at least one of methane, ethane, ethylene, acetylene, or any combination thereof. Obtaining may involve obtaining a container or other vessel containing the at least one co-reactant precursor. In some embodiments, the at least one co-reactant precursor may be obtained in a container or other vessel in which the at least one co-reactant precursor is vaporized. In some embodiments, the at least one co-reactant precursor is a vaporized co-reactant precursor. In some embodiments, the method further includes an inert gas, such as at least one of argon, helium, nitrogen, or any combination thereof.

[0043] In some embodiments, the method includes vaporizing a precursor. Vaporizing may include heating the precursor to a degree sufficient to obtain a vaporized precursor. In some embodiments, vaporizing may include heating a container containing the precursor. In some embodiments, vaporizing may include heating the precursor in a deposition chamber in which a vapor-phase deposition process is performed. In some embodiments, vaporizing may include heating a conduit for delivering the precursor, vaporized precursor, or any combination thereof to, for example, the deposition chamber. In some embodiments, vaporizing may include operating a vapor delivery system containing the precursor. In some embodiments, vaporizing may include heating the precursor to a temperature sufficient to vaporize it in order to obtain a vaporized precursor. In some embodiments, vaporizing may include heating to a temperature below the decomposition temperature of at least one of the precursor, vaporized precursor, or any combination thereof. In some embodiments, the precursor may be present in the gas phase, in which case this step is optional and not required. For example, the precursor may include a vaporized precursor.

[0044] In some embodiments, the method includes vaporizing at least one co-reactant precursor. In some embodiments, vaporizing may include heating at least one co-reactant precursor to a degree sufficient to obtain at least one vaporized co-reactant precursor. In some embodiments, vaporizing may include heating a vessel containing at least one co-reactant precursor. In some embodiments, vaporizing may include heating at least one co-reactant precursor in a deposition chamber in which a vapor-phase deposition process is performed. In some embodiments, vaporizing may include heating a conduit for delivering at least one co-reactant precursor, at least one vaporized co-reactant precursor, or any combination thereof to, for example, the deposition chamber. In some embodiments, vaporizing may include operating a vapor delivery system containing at least one co-reactant precursor. In some embodiments, vaporizing may include heating at least one co-reactant precursor to a temperature sufficient to vaporize it in order to obtain at least one vaporized co-reactant precursor. In some embodiments, vaporization may involve heating to a temperature below the decomposition temperature of at least one of the co-reactant precursors, at least one vaporized co-reactant precursor, or any combination thereof. In some embodiments, at least one co-reactant precursor may be present in the gas phase, in which case step 108 is optional and not required. For example, at least one co-reactant precursor may include at least one vaporized co-reactant precursor.

[0045] Contacting can be performed within any system, apparatus, device, assembly, chamber, or component thereof that is suitable for a deposition process (e.g., a vapor deposition process), including, but not limited to, a chamber or a deposition chamber. The second precursor and at least one co-reactant precursor can be brought into contact with the substrate simultaneously or at different times. For example, each of the second precursor, at least one co-reactant precursor, and the substrate may be present in the deposition chamber at the same time. That is, in some embodiments, contacting may include bringing the second precursor and at least one co-reactant precursor into contact with the substrate simultaneously, i.e., simultaneous contact. Alternatively, each of the second precursor and at least one co-reactant precursor may be present in the deposition chamber at different times. That is, in some embodiments, contacting may include alternating and / or sequential contact, in one or more cycles, bringing the second precursor into contact with the substrate, followed by bringing the at least one co-reactant precursor into contact with the substrate.

[0046] Deposition conditions may include conditions for gas-phase deposition processes. Examples of gas-phase deposition conditions include, but are not limited to, conditions for gas-phase deposition processes that include chemical vapor deposition (CVD), physical vapor deposition (PVD), digital or pulsed chemical vapor deposition, plasma-enhanced periodic chemical vapor deposition (PECCVD), fluid chemical vapor deposition (FCVD), atomic layer deposition (ALD), thermal atomic layer deposition, plasma-enhanced atomic layer deposition (PEALD), metal-organic chemical vapor deposition (MOCVD), plasma-enhanced chemical vapor deposition (PECVD), or at least one of any combination thereof.

[0047] Deposition conditions may include a deposition temperature. The deposition temperature may be lower than the thermal decomposition temperature of the second precursor, at least one co-reactant precursor, or any combination thereof. The deposition temperature may be high enough to reduce or avoid condensation of the second precursor, at least one co-reactant precursor, or any combination thereof. In some embodiments, the substrate may be heated to the deposition temperature. In some embodiments, the chamber or other vessel in which the substrate is brought into contact with the second precursor and at least one co-reactant precursor is heated to the deposition temperature. In some embodiments, at least one of the second precursor, at least one co-reactant precursor, or any combination thereof may be heated to the deposition temperature.

[0048] The deposition temperature can be between 200°C and 2500°C. In some embodiments, the deposition temperature can be between 500°C and 700°C. For example, in some embodiments, the deposition temperature can be between 500°C and 680°C, 500°C and 660°C, 500°C and 640°C, 500°C and 620°C, 500°C and 600°C, 500°C and 580°C, 500°C and 560°C, 500°C and 540°C, 500°C and 520°C, 520°C and 700°C, 540°C and 700°C, 560°C and 700°C, 580°C and 700°C, 600°C and 700°C, 620°C and 700°C, 640°C and 700°C, 660°C and 700°C, or 680°C and 700°C. In other embodiments, the deposition temperature is, for example, not limited to, 400°C to 2000°C, 500°C to 2000°C, 550°C to 2400°C, 600°C to 2400°C, 625°C to 2400°C, 650°C to 2400°C, 675°C to 2400°C, 700°C to 2400°C, 725°C to 2400°C, 750°C to 2400°C, 775°C to 2400°C, and 800°C to 240°C. 0℃, 825℃~2400℃, 850℃~2400℃, 875℃~2400℃, 900℃~2400℃, 925℃~2400℃, 950℃~2400℃, 975℃~2400℃, 1000℃~2400℃, 1025℃~2400℃, 1050℃~2400℃, 1075℃~2400℃, 1100℃~2400℃, 1200℃~2400℃, 130 0℃~2400℃, 1400℃~2400℃, 1500℃~2400℃, 1600℃~2400℃, 1700℃~2400℃, 1800℃~2400℃, 1900℃~2400℃, 2000℃~2400℃, 2100℃~2400℃, 2200℃~2400℃, 2300℃~2400℃, 500℃~2000℃, 500℃~1900℃, 500℃ Temperatures can range from over 200°C to 2500°C, such as ~1800°C, 500°C~1700°C, 500°C~1600°C, 500°C~1500°C, 500°C~1400°C, 500°C~1300°C, 500°C~1200°C, 500°C~1100°C, 500°C~1000°C, 500°C~1000°C, 500°C~900°C, or 500°C~800°C.

[0049] The deposition conditions may include deposition pressure. In some embodiments, the deposition pressure may include the vapor pressure of at least one of the second precursor, at least one co-reactant precursor, or any combination thereof. In some embodiments, the deposition pressure may include chamber pressure.

[0050] The deposition pressure can range from 0.001 Torr to 100 Torr. For example, in some embodiments, the deposition pressure can be 1 Torr to 30 Torr, 1 Torr to 25 Torr, 1 Torr to 20 Torr, 1 Torr to 15 Torr, 1 Torr to 10 Torr, 5 Torr to 50 Torr, 5 Torr to 40 Torr, 5 Torr to 30 Torr, 5 Torr to 20 Torr, or 5 Torr to 15 Torr. In other embodiments, the deposition pressure is 1 Torr~100 Torr, 5 Torr~100 Torr, 10 Torr~100 Torr, 15 Torr~100 Torr, 20 Torr~100 Torr, 25 Torr~100 Torr, 30 Torr~100 Torr, 35 Torr~100 Torr, 40 Torr~100 Torr, 45 Torr~100 Torr, 50 Torr~100 Torr, 55 Torr~100 Torr, 60 Torr~1 The pressure can be 00 Torr, 65 Torr to 100 Torr, 70 Torr to 100 Torr, 75 Torr to 100 Torr, 80 Torr to 100 Torr, 85 Torr to 100 Torr, 90 Torr to 100 Torr, 95 Torr to 100 Torr, 1 Torr to 95 Torr, 1 Torr to 90 Torr, 1 Torr to 85 Torr, 1 Torr to 80 Torr, 1 Torr to 75 Torr, or 1 Torr to 70 Torr. In other further embodiments, the deposition pressure may be a pressure of 1mTorr~100mTorr, 1mTorr~90mTorr, 1mTorr~80mTorr, 1mTorr~70mTorr, 1mTorr~60mTorr, 1mTorr~50mTorr, 1mTorr~40mTorr, 1mTorr~30mTorr, 1mTorr~20mTorr, 1mTorr~10mTorr, 100mTorr~300mTorr, 150mTorr~300mTorr, 200mTorr~300mTorr, or 150mTorr~250mTorr, or 150mTorr~225mTorr.

[0051] In some embodiments, the second coating comprises at least one of yttria, yttrium oxide, fluorinated yttrium oxide, alumina, SiC, diamond, TiN, TiCN, TiC, ZrN, or any combination thereof. In some embodiments, the second coating comprises at least one of Al2O3, Y2O3, or any combination thereof. In some embodiments, the second coating comprises at least one of Al2O3, Y2O3, fluorinated yttria, SiC, diamond, TiN, TiCN, TiC, ZrN, or any combination thereof. In some embodiments, the second coating comprises at least one of yttria, yttrium oxide, fluorinated yttrium oxide, alumina, SiC, diamond, TiN, TiCN, TiC, ZrN, or any combination thereof. In some embodiments, the second coating is a ceramic coating.

[0052] In some embodiments, the second coating is in direct contact with the substrate. In some embodiments, the second coating fills at least one of the at least one defects present on the substrate. In some embodiments, the coated substrate has a surface roughness less than that of the substrate without the second coating. In some embodiments, the surface roughness of the coated substrate is 5% to 60%, or any range or partial range between 5% and 60%, smaller than the surface roughness value of the substrate without the second coating. In some embodiments, the surface roughness of the coated substrate is 5% to 60%, 5% to 55%, 5% to 50%, 5% to 45%, 5% to 40%, 5% to 35%, 5% to 30%, 5% to 25%, 5% to 20%, 5% to 15%, 5% to 10%, 10% to 60%, 15% to 60%, 20% to 60%, 25% to 60%, 30% to 60%, 35% to 60%, 40% to 60%, 45% to 60%, 50% to 60%, or 55% to 60% smaller than the surface roughness value of the substrate without the second coating.

[0053] In some embodiments, the coated substrate has a surface roughness value S of less than 1.3 μm. a In some embodiments, the coated substrate has thicknesses of 0.1 μm to 1.3 μm, 0.1 μm to 1.2 μm, 0.1 μm to 1.1 μm, 0.1 μm to 1 μm, 0.1 μm to 0.9 μm, 0.1 μm to 0.8 μm, 0.1 μm to 0.7 μm, 0.1 μm to 0.6 μm, 0.1 μm to 0.5 μm, 0.1 μm to 0.4 μm, and 0.1 μm to 0.3 μm. m~0.1μm~0.2μm, 0.2μm~1.3μm, 0.3μm~1.3μm, 0.4μm~1.3μm, 0.5μm~1.3μm, 0.6μm~1.3μm, 0. Surface roughness value S of 7μm~1.3μm, 0.8μm~1.3μm, 0.9μm~1.3μm, 1μm~1.3μm, 1.1μm~1.3μm, or 1.2μm~1.3μm a It has.

[0054] In some embodiments, the second coating is a non-sintered coating. In some embodiments, the second coating is the same as the first coating. In some embodiments, the second coating is different from the first coating.

[0055] The second coating may have a thickness of 1 μm to 30 μm, or any range or partial range between 1 μm and 30 μm. In some embodiments, the second coating may have thicknesses of 1 μm to 29 μm, 1 μm to 28 μm, 1 μm to 27 μm, 1 μm to 26 μm, 1 μm to 25 μm, 1 μm to 24 μm, 1 μm to 23 μm, 1 μm to 22 μm, 1 μm to 21 μm, 1 μm to 20 μm, 1 μm to 19 μm, 1 μm to 18 μm, 1 μm to 17 μm. μm, 1μm~16μm, 1μm~15μm, 1μm~14μm, 1μm~13μm, 1μm~12μm, 1μm~11μm, 1μm~10μm, 1μm m~9μm, 1μm~8μm, 1μm~7μm, 1μm~6μm, 1μm~5μm, 1μm~4μm, 1μm~3μm, 1μm~2μm, 2μm~30μ m, 3μm~30μm, 4μm~30μm, 5μm~30μm, 6μm~30μm, 7μm~30μm, 8μm~30μm, 9μm~30μm, 10μm m~30μm, 11μm~30μm, 12μm~30μm, 13μm~30μm, 14μm~30μm, 15μm~30μm, 16μm~30μm, 17 It has a thickness of μm~30μm, 18μm~30μm, 19μm~30μm, 20μm~30μm, 21μm~30μm, 22μm~30μm, 23μm~30μm, 24μm~30μm, 25μm~30μm, 26μm~30μm, 27μm~30μm, 28μm~30μm, or 29μm~30μm.

[0056] In some embodiments, Method 100 does not include a heat treatment step. In some embodiments, Method 100 does not include removing at least a portion of the substrate. In some embodiments, removal includes removal by physical or mechanical force, such as, for example, grinding, chipping, cutting, peeling, or using mechanical tools to remove a portion of the substrate otherwise. In some embodiments, Method 100 includes removing at least a portion of an existing coating from the substrate before bringing the substrate into contact with the first precursor. In some embodiments, the existing coating includes at least one of yttria, yttrium oxide, fluorinated yttrium oxide, alumina, SiC, diamond, TiN, TiCN, TiC, ZrN, or any combination thereof.

[0057] Figure 2 is a schematic diagram of a method for manufacturing an article according to several embodiments. As shown in Figure 2, Method 200 includes forming a chemical vapor deposition (CVD) coating on a substrate having at least one defect. In some embodiments, Method 200 includes polishing the coating. In some embodiments, Method 200 includes forming a physical vapor deposition (PVD) and / or chemical vapor deposition (CVD) coating on the substrate.

[0058] Some embodiments relate to articles formed according to the methods disclosed herein. In some embodiments, for example, the article includes a substrate. The substrate may include a first coating disposed on the substrate. In some embodiments, the first coating is in direct contact with the surface of the substrate. In some embodiments, the first coating is in direct contact with a polished surface of the substrate. In some embodiments, the article includes a second coating. In some embodiments, the second coating is disposed on the first coating. In some embodiments, the second coating is disposed on the substrate. In some embodiments, the second coating is in direct contact with the surface of the substrate. In some embodiments, the second coating is in direct contact with a polished surface of the substrate. In some embodiments, the second coating is in direct contact with the surface of the first coating. In some embodiments, the second coating is in direct contact with a polished surface of the first coating. In some embodiments, the second coating is in direct contact with a fluorinated surface. In some embodiments, a chamber component of a vapor deposition process, comprising one or more articles of the articles disclosed herein and / or articles formed according to the methods disclosed herein.

[0059] Figure 3 is a FIB image of a substrate including pits and having a coating formed thereon according to the exemplary method described herein. [Examples]

[0060] Example 1 To prepare the samples, alumina (Al2O3) substrates were coated with an alumina coating using CVD. Each alumina substrate had surface defects, such as pores and cracks, but not limited to these, before being coated with CVD alumina. The surface roughness of each alumina substrate was measured at three different locations before and after coating with CVD alumina. Figures 4A and 4B show some images of the substrates before and after coating, taken with a laser confocal microscope at 50x magnification. The images include 3D images of the surface as well as profile graphs. From Figure 4A, it is clear from the profile graph that the uncoated substrate contains surface defects. The profile graph in Figure 4B shows that surface defects are no longer present after coating.

[0061] Furthermore, surface roughness values ​​of the samples before and after coating were obtained using a laser confocal microscope. The surface roughness values ​​(microns) of the alumina substrate are reported in Tables 1 and 2 below. TIFF2026536481000002.tif63170TIFF2026536481000003.tif33170

[0062] As shown in the table, the surface roughness value improved by 30% to 60% after coating.

[0063] manner Various embodiments are described below. It should be understood that one or more of the features listed in the embodiments below can be combined with one or more other embodiments. Embodiment 1. A method for forming a ceramic article, wherein the method is To obtain a ceramic substrate having at least one defect, In order to form a first coating on a ceramic substrate, the ceramic substrate is brought into contact with at least a first vaporized precursor under vapor-phase deposition conditions, A method for forming a ceramic article, comprising: bringing a ceramic substrate, when coated with a first coating, into contact with at least a first vaporization precursor having a surface roughness value less than the surface roughness value of an uncoated ceramic substrate. Embodiment 2. The method according to Embodiment 1, wherein the ceramic substrate includes an alumina substrate. Embodiment 3. The method according to any one embodiment of 1 or 2, wherein at least one defect comprises at least one of a pore, a pit, a scratch, an etching line, or any combination thereof. Embodiment 4. The method according to any one of Embodiments 1 to 3, wherein, when coated with the first coating, the surface roughness value of the ceramic substrate is 5% to 60% smaller than the surface roughness value of the uncoated ceramic substrate. Embodiment 5. When coated with the first coating, the ceramic substrate has a surface roughness value S of less than 1.3 μm. a The method according to any one of embodiments 1 to 4, having the following characteristics. Embodiment 6. Uncoated ceramic substrate having a surface roughness value S of 1.3 μm or more a The method according to any one of embodiments 1 to 5, having the characteristics of: Embodiment 7. The method according to any one of Embodiments 1 to 6, wherein the first coating comprises at least one of Al2O3, Y2O3, or any combination thereof. Apparatus 8. The following steps: To obtain a ceramic substrate having a polished surface, at least a portion of the surface of the ceramic substrate is polished. In order to fluorinate the surface of a ceramic substrate, the ceramic substrate is brought into contact with a vaporized fluorine-containing precursor. To form a second coating on a ceramic substrate, the ceramic substrate is brought into contact with at least a second vaporized precursor under vapor-phase deposition conditions, or The method according to any one of embodiments 1 to 7, further comprising at least one of any combination thereof. Embodiment 9. A method for forming a ceramic article, wherein the method is To obtain a ceramic substrate having at least one defect, In order to form a first coating on a ceramic substrate, the ceramic substrate is brought into contact with at least a first vaporized precursor under vapor-phase deposition conditions, When coated with the first coating, the ceramic substrate is brought into contact with at least the first vaporization precursor having a surface roughness value less than the surface roughness value of the uncoated ceramic substrate. A method for forming a ceramic article, comprising contacting a ceramic substrate with at least a second vaporized precursor under vapor-phase deposition conditions in order to form a second coating on the ceramic substrate. Embodiment 10. The method according to Embodiment 9, wherein the ceramic substrate comprises at least one of Al2O3, Y2O3, or any combination thereof. Embodiment 11. The method according to any one of Embodiments 9 or 10, wherein the first coating comprises Al2O3, Y2O3, or any combination thereof. Embodiment 12. The method according to any one of Embodiments 9 to 11, wherein the second coating comprises Al2O3, Y2O3, fluorinated yttria, SiC, diamond, TiN, TiCN, TiC, ZrN, or any combination thereof. Embodiment 13. A method for forming a ceramic article, wherein the method is To obtain a ceramic substrate having at least one defect, In order to form a first coating on a ceramic substrate, the ceramic substrate is brought into contact with at least a first vaporized precursor under vapor-phase deposition conditions, When coated with the first coating, the ceramic substrate is brought into contact with at least the first vaporization precursor having a surface roughness value less than the surface roughness value of the uncoated ceramic substrate. To obtain a ceramic substrate having a polished surface, at least a portion of the surface of the ceramic substrate is polished, In order to fluorinate the surface of the ceramic substrate, the ceramic substrate is brought into contact with a vaporized fluorine-containing precursor, A method for forming a ceramic article, comprising contacting a ceramic substrate with at least a second vaporized precursor under vapor-phase deposition conditions in order to form a second coating on the ceramic substrate. Embodiment 14. The method according to Embodiment 13, wherein the ceramic substrate includes an alumina substrate. Embodiment 15. The method according to any one embodiment of 13 or 14, wherein at least one defect comprises at least one of a pore, a pit, a scratch, an etching line, or any combination thereof. Embodiment 16. The method according to any one of Embodiments 13 to 15, wherein, when coated with the first coating, the surface roughness value of the ceramic substrate is 5% to 60% smaller than the surface roughness value of the uncoated ceramic substrate. Embodiment 17. When coated with the first coating, the ceramic substrate has a surface roughness value S of less than 1.3 μm. a The method according to any one of embodiments 13 to 16, wherein the method is characterized by having the characteristics of any one of embodiments 13 to 16. Embodiment 18. Uncoated ceramic substrate with a surface roughness value S of 1.3 μm or greater. a The method according to any one of embodiments 13 to 17, wherein the method is characterized by having the characteristics of one embodiment. Embodiment 19. The method according to any one of Embodiments 13 to 18, wherein the first coating comprises at least one of Al2O3, Y2O3, or any combination thereof. Embodiment 20. The method according to any one of Embodiments 13 to 19, wherein the second coating comprises at least one of Al2O3, Y2O3, fluorinated yttria, SiC, diamond, TiN, TiCN, TiC, ZrN, or any combination thereof.

[0064] In particular, it should be understood that detailed modifications to the construction materials used, as well as the shape, size, and arrangement of components, may be made without departing from the scope of this disclosure. This specification and the embodiments described herein are examples, and the true scope and spirit of this disclosure are shown by the subsequent claims.

Claims

1. A method for forming a ceramic article, wherein the method is To obtain a ceramic substrate having at least one defect, In order to form a coated ceramic substrate, which includes a first coating on the ceramic substrate, the ceramic substrate is brought into contact with at least a first precursor under deposition conditions, The coated ceramic substrate has a surface roughness value that is less than the surface roughness value of the ceramic substrate without the first coating. The ceramic substrate is brought into contact with at least the first precursor, A method for forming ceramic articles, including the following.

2. The method according to claim 1, wherein the ceramic substrate includes an alumina substrate.

3. The method according to claim 1, wherein the at least one defect includes at least one of a pore, a pit, a scratch, an etching line, or any combination thereof.

4. The method according to claim 1, wherein the surface roughness value of the coated ceramic substrate is 5% to 60% smaller than the surface roughness value of the ceramic substrate without the first coating.

5. The ceramic substrate without the first coating has a surface roughness value S of 0.05 μm to 1 μm. ａ The method according to claim 1, comprising:

6. The first coating is Al ２ O ３ , Y ２ O ３ The method according to claim 1, comprising, or at least one of any combination thereof.

7. The following steps: To obtain a ceramic substrate having a polished surface, at least a portion of the surface of the ceramic substrate is polished. In order to fluorinate the surface of the ceramic substrate, the ceramic substrate is brought into contact with a vaporized fluorine-containing precursor. To form a second coated ceramic substrate, which includes a second coating on the aforementioned ceramic substrate, the ceramic substrate is brought into contact with at least a second precursor under deposition conditions, or This further includes at least one of any combination of these, The method according to claim 1.

8. A method for forming a ceramic article, wherein the method is To obtain a ceramic substrate having at least one defect, In order to form a coated ceramic substrate, which includes a first coating on the ceramic substrate, the ceramic substrate is brought into contact with at least a first precursor under deposition conditions, The coated ceramic substrate has a surface roughness value that is less than the surface roughness value of the ceramic substrate without the first coating. The ceramic substrate is brought into contact with at least the first precursor, In order to form a second coated ceramic substrate, which includes a second coating on the aforementioned ceramic substrate, the ceramic substrate is brought into contact with at least a second precursor under deposition conditions. A method for forming ceramic articles, including the following.

9. The ceramic substrate comprises Al ２ O ３ , Y ２ O ３ , or at least one of any combination thereof, the method according to claim 8.

10. The first coating is Al ２ O ３ , Y ２ O ３ The method according to claim 8, including, or any combination thereof.

11. The second coating is Al ２ O ３ , Y ２ O ３ The method according to claim 8, comprising fluorinated yttria, SiC, diamond, TiN, TiCN, TiC, ZrN, or any combination thereof.

12. A method for forming a ceramic article, wherein the method is To obtain a ceramic substrate having at least one defect, In order to form a coated ceramic substrate, which includes a first coating on the ceramic substrate, the ceramic substrate is brought into contact with at least a first precursor under deposition conditions, The coated ceramic substrate has a surface roughness value that is less than the surface roughness value of the ceramic substrate without the first coating. The ceramic substrate is brought into contact with at least the first precursor, To obtain a ceramic substrate having a polished surface, at least a portion of the surface of the ceramic substrate is polished, In order to fluorinate the surface of the ceramic substrate, the ceramic substrate is brought into contact with a vaporized fluorine-containing precursor, In order to form a second coated ceramic substrate, which includes a second coating on the aforementioned ceramic substrate, the ceramic substrate is brought into contact with at least a second precursor under deposition conditions. A method for forming ceramic articles, including the following.

13. The method according to claim 12, wherein the ceramic substrate includes an alumina substrate.

14. The method according to claim 12, wherein the at least one defect includes at least one of a pore, a pit, a scratch, an etching line, or any combination thereof.

15. The method according to claim 12, wherein the surface roughness value of the coated ceramic substrate is 5% to 60% smaller than the surface roughness value of the ceramic substrate without the first coating and / or the second coating.

16. The method according to claim 12, wherein the ceramic substrate not having the first coating has a surface roughness value Sa of 0.05 μm to 1 μm.

17. The first coating is Al ２ O ３ , Y ２ O ３ The method according to claim 12, comprising, or at least one of any combination thereof.

18. The second coating is Al ２ O ３ , Y ２ O ３ The method according to claim 12, comprising at least one of fluorinated yttria, SiC, diamond, TiN, TiCN, TiC, ZrN, or any combination thereof.

19. A coated ceramic substrate, A ceramic substrate having at least one defect, The ceramic substrate includes a coating disposed on the ceramic substrate, A coated ceramic substrate having a surface roughness value less than the surface roughness value of the uncoated ceramic substrate, Articles including.

Images