Semiconductor and Electronic Devices

JP7596610B2Active Publication Date: 2024-12-10INTEL CORP
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Patent Information

Application Number
JP2020143839
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2019-12-13
Filing Date
2020-08-27
Publication Date
2024-12-10
Estimated Expiration
2040-08-27

AI Technical Summary

Technical Problem

The challenge in implementing high voltage nanoribbon transistors is the limitation imposed by ribbon-to-ribbon spacing, which restricts the ability to increase gate dielectric thickness and maintain standard pitch alignment, affecting voltage drop and transistor performance.

Method used

The introduction of extended drain regions in nanoribbon transistors, where the drain extension is doped to control voltage drop and resistance, allowing for higher voltages without increasing gate dielectric thickness, and optionally incorporating dummy gate structures to maintain standard pitch alignment.

Benefits of technology

This approach enables the fabrication of high voltage nanoribbon transistors with improved voltage handling capabilities while maintaining standard pitch alignment, enhancing transistor performance and flexibility in design.

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Abstract

To provide a voltage transistor in a nanowire and a nanoribbon device.SOLUTION: A semiconductor device 100 includes a substrate 101, a source region 121 on the substrate 101, a drain region 122 on the substrate, and a semiconductor body 110 extending from the source region 121 to the drain region 122. The semiconductor body 110 includes a first region 110A having a first conductive mold and a second region 110B having a second conductive mold. A gate structure 130A is included on the first region 110A of the semiconductor body 110. The gate structure 130A is closer to the source region 121 than the drain region 122.SELECTED DRAWING: Figure 1A
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Citation Information

Patent Citations

  • Nanowire field effect transistor and forming method thereof

    CN103258741A

  • Semiconductor integrated circuit

    JP2010004019A

  • Insulated gate bipolar transistor device, semiconductor device and method for forming the insulated gate bipolar transistor device or the semiconductor device

    JP2016009869A

  • Extended drain structures for high voltage field effect transistors

    JP2017522719A

  • Tunnel Field-Effect Transistor and Method for Manufacturing the Same

    JP2018504775A