Method for producing aluminum nitride crystals

JP7599643B2Active Publication Date: 2024-12-16TOHOKU UNIV
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Patent Information

Application Number
JP2020141981
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2020-08-25
Publication Date
2024-12-16
Estimated Expiration
2040-08-25

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Abstract

To provide a method for manufacturing an aluminum nitride crystal, capable of manufacturing an aluminum nitride crystal at a low cost and at a larger growth rate.SOLUTION: A method for manufacturing an aluminum nitride crystal comprises: a heating step of heating an Al containing alloy melt 7 at a temperature higher than the minimum temperature in a temperature range in which an aluminum nitride crystal is decomposed in the melt 7, in the state of contacting the Al containing alloy melt to an aluminum nitride containing sintered body; and a deposit step of depositing the aluminum nitride crystal in the melt 7 by reducing the melt 7 to a temperature equal to or higher than the liquidus temperature of the alloy and a temperature lower than the minimum temperature at which the aluminum nitride crystal is decomposed. The heating step and the deposit step are performed in an atmosphere including nitrogen.SELECTED DRAWING: Figure 2
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Citation Information

Patent Citations

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