The need for selective removal of Si3N4 by wet chemistry

JP7600130B2Active Publication Date: 2024-12-16SHANGHAI INST OF IC MATERIALS
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Patent Information

Application Number
JP2021549173
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2019-02-20
Filing Date
2020-02-20
Publication Date
2024-12-16
Estimated Expiration
2040-02-20

AI Technical Summary

Technical Problem

Current methods for removing silicon nitride layers from integrated circuit devices are inefficient and lead to etching by-products that contaminate the surface and hinder the formation of high aspect ratio structures, particularly in 3D NAND memory fabrication, due to the inability to effectively manage and remove etching by-products.

Method used

A system and method involving a processing chamber and a by-product removal section that converts etching by-products into precipitates using precipitation promoters, filters them out, and recirculates the etching solution to maintain etching efficiency and purity.

Benefits of technology

The system effectively removes etching by-products, ensuring consistent etching performance and enabling the formation of high aspect ratio structures in 3D NAND memory by preventing surface contamination and enhancing etching solution recycling.

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Abstract

A system for processing a substrate and a method for processing a substrate are disclosed. A system for processing a substrate includes a processing chamber configured to receive the substrate, wherein the substrate is exposed to an etching solution in the processing chamber to remove a portion of the substrate, providing access to the substrate and generating by-products in the etching solution, and a by-product removal unit configured to remove the by-products by converting the by-products into precipitates and removing the precipitates, wherein the etching solution is circulated back to the processing chamber after the by-products have been removed.
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Citation Information

Patent Citations

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    JP1995086260A

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