Semiconductor Device

JP7600565B2Active Publication Date: 2024-12-17FUJI ELECTRIC CO LTD
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Patent Information

Application Number
JP2020141295
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2020-08-25
Publication Date
2024-12-17
Estimated Expiration
2040-08-25

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Abstract

To provide a semiconductor device including a plurality of power semiconductor switching elements, in which the temperature of each power semiconductor switching element is detected accurately and collected efficiently.SOLUTION: A semiconductor device includes a plurality of power modules each including a power semiconductor switching element including a temperature detecting diode, and a driving circuit including an output circuit that turns on or off the power semiconductor switching element, outputting a warning signal for warning when the value of forward voltage of the temperature detecting diode becomes less than or equal to a first reference voltage value, and outputting a protection operation signal for stopping the on / off operation of the power semiconductor switching element when the value of forward voltage becomes less than or equal to a second reference voltage value, which is lower than the first reference voltage value. An external warning signal is output as the logical sum of the warning signals of the power modules.SELECTED DRAWING: Figure 1
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Citation Information

Patent Citations

  • Protection circuit for semiconductor device

    JP1991247114A

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    JP1992351010A

  • Semiconductor module

    JP2000134074A

  • Temperature detector of semiconductor module

    JP2004117260A

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    JP2019201523A