Light source element, display device, and mobile terminal

Abstract

The present invention provides a light source element, a display device, and a mobile terminal. The light source element includes a first semiconductor layer, a light emitting layer, and a second semiconductor layer, which are stacked together. The light emitting layer is located between the first semiconductor layer and the second semiconductor layer. The surface of the second semiconductor layer, which is away from the light emitting layer, is a light emitting surface. The side surface of the semiconductor layer has a surface non-radiative recombination center. When the light source element operates, the surface non-radiative recombination center captures carriers in the semiconductor layer, and surface non-radiative recombination of carriers occurs on the side surface. This reduces the light emission efficiency of the light source element. In order to solve the above problem, the light source element of the present invention is further provided with a conductive layer. The conductive layer can adjust and control the carriers by a force due to an electric field to move away from the surface non-radiative recombination centers of the first semiconductor layer and the second semiconductor layer. In this way, the carriers move away from the surface non-radiative recombination centers of the semiconductor layers under the action of the force due to the electric field, thereby reducing the cases in which the carriers are captured by the surface non-radiative recombination centers, and improving the light output efficiency of the light source element.

Description

[Technical field]

[0001]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims priority to Chinese Patent Application No. 202110066742.4, entitled "Light Source Device, Display Device, and Mobile Terminal," filed with the State Intellectual Property Office of China on January 19, 2021, the entire contents of which are incorporated herein by reference.

[0002]

[0002] TECHNICAL FIELD The present application relates to the field of display technology, in particular to light source elements, display devices and mobile terminals. [Background technology]

[0003]

[0003] Micro LED (Micro Light Emitting Diode) is a new generation display technology. Compared with traditional OLED (Organic Light Emitting Diode) and LCD (Liquid Crystal Display) technologies, Micro LED has obvious advantages such as fast response, autonomous light emission, high luminance, low power consumption, super high resolution and color saturation, and is the current research hotspot and important investment destination in the display field.

[0004]

[0004] The display scenario of mobile terminals such as watches or mobile phones is very sensitive to the power consumption of micro LEDs. Micro LEDs need to operate at low current density and have high luminous efficiency in this current range. In addition, micro LEDs require a small luminous angle and high vertical brightness to ensure sufficient light energy utilization, thereby ensuring that the power consumption of the display module meets the system requirements. However, current micro LEDs have low luminous efficiency at low current density and cannot meet the requirements of mobile terminals. Summary of the Invention

[0005]

[0005] The present application provides a light source element, a display device, and a mobile terminal to improve the light output efficiency of the light source element.

[0006]

[0006] According to a first aspect, a light source element is provided. The light source element is configured to be applied to a display device and provide a display for the display device. The light source element is an LED assembly. The main structure of the light source element includes a first semiconductor layer, a light emitting layer, and a second semiconductor layer that are stacked. The light emitting layer is located between the first semiconductor layer and the second semiconductor layer. The surface of the second semiconductor layer that is away from the light emitting layer is a light emitting surface. The first semiconductor layer and the second semiconductor layer each have a surface non-radiative recombination center. When the light source element operates, the surface non-radiative recombination center captures carriers in the semiconductor layer. This reduces the light emitting efficiency of the light source element. In order to solve the above problem, the light source element of the present invention is further provided with a conductive layer. The conductive layer can adjust and control carriers by a force due to an electric field so as to move away from at least one of the two surface non-radiative recombination centers. In this way, carriers are moved away from the surface non-radiative recombination centers of the semiconductor layer under the action of the force due to the electric field, thereby reducing the cases where carriers are captured by the surface non-radiative recombination centers and improving the light output efficiency of the light source element.

[0007]

[0007] In a particular implementable solution, the conductive layer covers at least a side surface of the first semiconductor layer and a side surface of the second semiconductor layer. The light source element further includes: a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer. The conductive layer is electrically connected to at least one of the first electrode and the second electrode. The first electrode or the second electrode is used as a connection terminal of the conductive layer. When the light source element is used, the conductive layer can be charged by using the first electrode or the second electrode, so that a force due to an electric field can be applied to carriers close to the surface non-radiative recombination center.

[0008]

[0008] The conductive layer may be specifically arranged in various ways. In an optional solution, the conductive layer includes a first conductive layer and a second conductive layer that are electrically insulated. That is, the conductive layer includes a first conductive layer and a second conductive layer. The first conductive layer is arranged on the outer side of the first semiconductor layer, and the second conductive layer is arranged on the outer side of the second semiconductor layer. The first conductive layer is electrically connected to a first electrode, and the second conductive layer is electrically connected to a second electrode. The first electrode and the second electrode supply power to the corresponding first conductive layer and the second conductive layer, respectively, so that the first conductive layer and the second conductive layer apply a force due to an electric field to the carriers in the corresponding first semiconductor layer and the second semiconductor layer, respectively.

[0009]

[0009] In another optional solution, the conductive layer includes a third conductive layer. The third conductive layer is disposed on the outer side of the first semiconductor layer, the light emitting layer, and the second semiconductor layer. The third conductive layer is electrically connected to the first electrode, or the third conductive layer is electrically connected to the second electrode. For example, the third conductive layer is electrically connected to the first electrode and electrically insulated from the second electrode; or the third conductive layer is electrically connected to the second electrode and electrically insulated from the first electrode.

[0010]

[0010] In a specific implementable solution, the surface of the conductive layer facing the first semiconductor layer and the second semiconductor layer is a reflective surface. The light emitted from the side of the first semiconductor layer, the second semiconductor layer and the light emitting layer is reflected back into the aforementioned layer structure through the reflective surface, thereby increasing the amount of light output from the light output surface of the second semiconductor layer.

[0011]

[0011] In a particular possible solution, the reflective surface of the conductive layer covers at least a portion of the surface of the first semiconductor layer and the second semiconductor layer that is away from the light output surface, which further increases the amount of light output from the light output surface.

[0012]

[0012] In a particular implementable solution, when the conductive layer includes a first conductive layer and a second conductive layer, the first conductive layer covers at least a portion of the surface of the first semiconductor layer that is away from the light-emitting surface, and the second conductive layer at least partially covers the surface of the second semiconductor layer that is away from the light-emitting surface.

[0013]

[0013] In a particular implementable solution, when the conductive layer includes a third conductive layer, the third conductive layer covers at least a part of each of the surfaces of the first semiconductor layer and the second semiconductor layer that are away from the light-emitting surface. For example, the third conductive layer covers only the surface of the first semiconductor layer that is away from the light-emitting surface, or covers only the surface of the second semiconductor layer that is away from the light-emitting surface, or covers both the surfaces of the first semiconductor layer and the second semiconductor layer that are away from the light-emitting surface.

[0014]

[0014] In a specific implementable solution, the light source element further includes a first passivation layer covering a side surface of the first semiconductor layer, a side surface of the light emitting layer, and a side surface of the second semiconductor layer. The conductive layer covers the outside of the first passivation layer. The conductive layer is insulated from the first semiconductor layer, the light emitting layer, and the second semiconductor layer by the first passivation layer.

[0015]

[0015] In a specific possible solution, the light source element further includes a second passivation layer covering the outside of the conductive layer. The second passivation layer is used as a protective layer to protect the functional layer of the light source element.

[0016]

[0016] In a specific possible solution, the light source element further includes an anti-reflection coating layer disposed on the light output surface. The anti-reflection coating layer is used to reduce the total reflection of the light output surface, thereby improving the light output efficiency.

[0017]

[0017] In a specific possible solution, the anti-reflection coating layer is a layer structure with a gradient refractive index, and the refractive index of the anti-reflection coating layer gradually decreases in the direction away from the light emitting layer, which further improves the light output efficiency.

[0018]

[0018] In a specific implementable solution, an anti-reflective coating layer covers the exposed surface of the conductive layer. The anti-reflective coating layer and the second passivation layer together form an insulating protective layer. The conductive layer is covered by the anti-reflective coating layer and the second passivation layer to avoid electrical leakage.

[0019]

[0019] In a specific possible solution, the light source element further includes a QD material layer disposed between the anti-reflection coating layer and the second semiconductor layer, the QD material layer covering the light output surface of the second semiconductor layer. The color of the light is converted by the QD material layer to emit light of various colors.

[0020]

[0020] In a particular possible solution, the light output surface of the second semiconductor layer is provided with a plurality of fill holes. The QD material has protrusions that fill the fill holes. The bonding strength between the QD material layer and the second semiconductor layer is enhanced by fitting between the fill holes and the protrusions.

[0021]

[0021] In certain possible solutions, the filling holes may be holes of various shapes, such as tapered holes or trapezoidal holes.

[0022]

[0022] In a particular possible solution, the filling holes are arranged in a regular manner, for example, the filling holes are arranged uniformly or alternately densely and sparsely.

[0023]

[0023] In a particular implementable solution, the first semiconductor layer, the light emitting layer and the second semiconductor layer are in an inverted trapezoid structure, which improves the light output efficiency.

[0024]

[0024] In a specific possible solution, the side surfaces of the first semiconductor layer, the light emitting layer and the second semiconductor layer have an inclination angle between 45° and 80° with respect to the light output surface. For example, the angle may be different angles such as 45°, 60°, 80°.

[0025]

[0025] According to a second aspect, a display device is provided. The display device includes a chip and a light source element according to any of the above. The chip is configured to control the light source element to emit light. In the above solution, the side of the semiconductor layer of the light source element has a surface non-radiative recombination center. When the light source element operates, the surface non-radiative recombination center captures carriers in the semiconductor layer. This reduces the light emission efficiency of the light source element. In order to solve the above problem, the light source element of the present invention is further provided with a conductive layer. The conductive layer can adjust and control the carriers by the force of the electric field to move away from the surface non-radiative recombination centers of the first semiconductor layer and the second semiconductor layer. In this way, the carriers move away from the surface non-radiative recombination centers of the semiconductor layer under the action of the force of the electric field, thereby reducing the cases in which the carriers are captured by the surface non-radiative recombination centers and improving the light output efficiency of the light source element.

[0026]

[0026] According to a third aspect, a mobile terminal is provided. The mobile terminal includes a housing and a display device disposed in the housing. In the above solution, the side of the semiconductor layer of the light source element has a surface non-radiative recombination center. When the light source element operates, the surface non-radiative recombination center captures carriers in the semiconductor layer. This reduces the light emission efficiency of the light source element. In order to solve the above problem, the light source element of the present invention is further provided with a conductive layer. The conductive layer can adjust and control the carriers by the force of the electric field to move away from the surface non-radiative recombination centers of the first semiconductor layer and the second semiconductor layer. In this way, the carriers move away from the surface non-radiative recombination centers of the semiconductor layer under the action of the force of the electric field, thereby reducing the cases in which the carriers are captured by the surface non-radiative recombination centers and improving the light output efficiency of the light source element. [Brief description of the drawings]

[0027] [Figure 1]

[0027] FIG. 1 is a schematic diagram of the structure of a mobile terminal in the prior art. [Diagram 2]

[0028] FIG. 2 is a schematic diagram of the structure of a light source element in the prior art. [Diagram 3]

[0029] FIG. 3 is a schematic diagram of a structure of a light source element according to an embodiment of the present application. [Figure 4]

[0030] FIG. 4 is a schematic diagram of another structure of a light source element according to an embodiment of the present application. [Diagram 5]

[0031] FIG. 5 is a schematic diagram of another structure of a light source element according to an embodiment of the present application. [Figure 6]

[0032] FIG. 6 is a schematic diagram of another structure of a light source element according to an embodiment of the present application. [Figure 7]

[0033] FIG. 7 is a schematic diagram of another structure of a light source element according to an embodiment of the present application. [Figure 8]

[0034] FIG. 8 is a schematic diagram of another structure of a light source element according to an embodiment of the present application. [Figure 9]

[0035] FIG. 9 is a schematic diagram of another structure of a light source element according to an embodiment of the present application. [Figure 10]

[0036] FIG. 10 is a schematic diagram of another structure of a light source element according to an embodiment of the present application. [Figure 11]

[0037] FIG. 11 is a schematic diagram of another structure of a light source element according to an embodiment of the present application. [Figure 12]

[0038] FIG. 12 is a schematic diagram of another structure of a light source element according to an embodiment of the present application. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0028]

[0039] First, the terms used in this application will be explained.

[0029]

[0040] Radiative recombination: When electrons and holes recombine, according to the principle of conservation of energy, some energy should be released. If the energy is released in the form of photons, such recombination is called radiative recombination.

[0030]

[0041] Non-radiative recombination: Recombination is classified as radiative and non-radiative based on the mode of energy release during recombination. Recombination in which energy is released in a manner other than radiated photons is called non-radiative recombination. Non-radiative recombination mainly includes multi-phonon recombination and Auger recombination.

[0031]

[0042] Semiconductor Energy Levels: Electrons can only move on certain discrete orbitals. Electrons on each orbit have discrete energies. These energy values ​​are energy levels. Electrons can transition between different orbitals. Energy absorbed by electrons transitions from a lower energy level to a higher energy level or from a higher energy level to a lower energy level, resulting in the emission of energy.

[0032]

[0043] Surface non-radiative recombination centers: Surface non-radiative recombination centers are semiconductor energy levels at the surface of a semiconductor material, including those formed by defects and surface dangling bonds at the surface of the light source element. Non-radiative recombination of carriers occurs at surface non-radiative recombination centers.

[0033]

[0044] The light source element is a micro LED, which can emit light of different colors according to conditions. The light source element may be, for example, a micro LED emitting red light, a micro LED emitting blue light, and a micro LED emitting green light. The light source element may be applied to a display device, for example, a mobile phone, a tablet computer, or a wearable device. FIG. 1 is a schematic diagram of a structure of a light source element applied to a mobile terminal. A mobile terminal 100 includes a plurality of light source elements 200. The plurality of light source elements 200 are arranged in an array to form a display layer of the mobile terminal. The light source element 200 emits light of different colors, such as red, green, and blue, to realize an image display.

[0034]

[0045] The display situation of mobile terminals such as watches or mobile phones is very sensitive to the power consumption of micro LEDs. Micro LEDs need to operate at low current density and have high luminous efficiency at low current density. In addition, micro LEDs require small luminous angle and high vertical brightness to ensure sufficient light energy utilization, thereby ensuring that the power consumption of the display module meets the system requirements. However, in the prior art, micro LEDs have low luminous efficiency at low current density and cannot meet the requirements of the display device.

[0035]

[0046] FIG. 2 is a schematic diagram of the low light emitting efficiency of a micro LED in the prior art. The micro LED includes a first semiconductor layer 1, a light emitting layer 2, and a second semiconductor layer 3 stacked together. The first semiconductor layer 1 is connected to a first electrode 5, the second semiconductor layer 3 is connected to a second electrode 4, and the first electrode 5 and the second electrode 4 are connected to a circuit board 6. The surface of the second semiconductor layer 3 that is away from the light emitting layer 2 is the light emitting surface, and is also the light emitting surface of the micro LED. For ease of explanation, the side surface of the micro LED is defined. The side surface of the micro LED is the surface adjacent to the light emitting surface, and includes the side surface of the first semiconductor layer 1, the side surface of the second semiconductor layer 3, and the side surface of the light emitting layer 2. The side surface of the first semiconductor layer 1, the side surface of the second semiconductor layer 3, and the side surface of the light emitting layer 2 each have a surface non-radiative recombination center.

[0036]

[0047] During light emission, electrons in the second semiconductor layer 3 move toward the first semiconductor layer 1. Also, holes in the first semiconductor layer 1 move toward the second semiconductor layer 3. The electrons and holes recombine to radiate light in the light-emitting layer 2, producing light. During the light emission process, carriers (electrons and holes) are affected by surface non-radiative recombination centers, and non-radiative recombination occurs at the surface non-radiative recombination centers. Carriers are captured by these surface non-radiative recombination centers and surface states, in which case non-radiative recombination of carriers (recombination without light emission) occurs, affecting the light emission efficiency.

[0037]

[0048] Referring to the structure of the light source element shown in FIG. 2, due to the large diffusion distance of carriers (electrons and holes) in the first semiconductor layer 1 and the second semiconductor layer 3, some electrons and holes move to the side of the light source element and are captured by surface non-radiative recombination centers at the side of the light source element. As shown in FIG. 2, the first semiconductor layer 1, the second semiconductor layer 3, and the light emitting layer 2 each have a surface non-radiative recombination center. Non-radiative recombination of holes and electrons occurs at the surface non-radiative recombination center. This reduces the light emission efficiency of the light source element. Therefore, the embodiment of the present application provides a light source element. Hereinafter, the light source element will be described in detail with reference to specific attached drawings and embodiments.

[0038]

[0049] 3 is a schematic diagram of the structure of a light source element according to an embodiment of the present application. The main structure of the light source element provided in this embodiment of the present application includes a multi-layer structure stacked together. The layer structure includes a first semiconductor layer 30, a light emitting layer 20, and a second semiconductor layer 10 stacked together. The light emitting layer 20 is located between the first semiconductor layer 30 and the second semiconductor layer 10. The surface of the second semiconductor layer 10 that is away from the light emitting layer 20 is the light output surface, and the light output surface of the second semiconductor layer 10 is also the light output surface of the light source element.

[0039]

[0050] The first semiconductor layer 30 and the second semiconductor layer 10 are an N-type semiconductor layer and a P-type semiconductor layer, respectively. For example, the first semiconductor layer 30 is an N-type semiconductor layer, and the second semiconductor layer 10 is a P-type semiconductor layer; or, the first semiconductor layer 30 is a P-type semiconductor layer, and the second semiconductor layer 10 is an N-type semiconductor layer. In this embodiment of the present application, an example in which the first semiconductor layer 30 is an N-type semiconductor layer, and the second semiconductor layer 10 is a P-type semiconductor layer will be described.

[0040]

[0051] The light emitting layer 20 is a transition layer located between the N-type semiconductor layer and the P-type semiconductor layer, and may also be referred to as a PN junction. After a forward voltage is applied to the light source device, holes (injected from the N-type semiconductor layer to the P-type semiconductor layer) and electrons (injected from the P-type semiconductor layer to the N-type semiconductor layer) recombine to generate emitted light.

[0041]

[0052] The light source element is provided with a first electrode 40 and a second electrode 50 configured to be connected to a circuit board 300. The first semiconductor layer 30 is electrically connected to the first electrode 40, and the second semiconductor layer 10 is electrically connected to the second electrode 50. When fitting with the circuit board 300, the first electrode 40 and the second electrode 50 are connected to the circuit board 300 by welding or other electrical connection manner. The first electrode 40 and the second electrode 50 can be positive and negative electrodes, respectively. For example, if the first semiconductor layer 30 is an N-type semiconductor layer and the second semiconductor layer 10 is a P-type semiconductor layer, the first electrode 40 is a positive electrode and the second electrode 50 is a negative electrode.

[0042]

[0053] With reference to the prior art shown in FIG. 2, it can be seen that the side of the aforementioned layer structure (first semiconductor layer 30, light emitting layer 20, and second semiconductor layer 10) has a surface non-radiative recombination center. When the light source device operates, the surface non-radiative recombination center captures carriers in the layer structure. This reduces the light emission efficiency of the light source device. To overcome the influence of the surface non-radiative recombination center on the light emission efficiency, the light source device provided in this embodiment of the present invention includes a conductive layer 60 on the outside of the side of the first semiconductor layer 30 and the second semiconductor layer 10. The conductive layer 60 is configured to adjust and control carriers by a force due to an electric field so as to move away from the surface non-radiative recombination center of the first semiconductor layer 30 and the surface non-radiative recombination center of the second semiconductor layer 10. The material of the conductive layer 60 may be a conductive non-metallic material or a metallic material. This is not particularly limited in this embodiment of the present application. For example, the material of the conductive layer 60 may be a material having high electrical conductivity, such as silver, gold, aluminum, and copper.

[0043]

[0054] Please refer to FIG. 3. The conductive layer 60 includes a first conductive layer 61 and a second conductive layer 62. The first conductive layer 61 is located on the outer side of the first semiconductor layer 30, and the second conductive layer 62 is located on the outer side of the second semiconductor layer 10. In order to avoid direct conductive connection between the first conductive layer 61 and the first semiconductor layer, and in order to avoid direct conductive connection between the second conductive layer 62 and the second semiconductor layer, a first passivation layer 71 is disposed on the outer side of the first semiconductor layer 30, the light emitting layer 20, and the second semiconductor layer 10. The first passivation layer 71 covers the outer side and bottom wall of the first semiconductor layer 30, the side of the light emitting layer 20, and the side and bottom wall of the second semiconductor layer 10. The first conductive layer 61 and the second conductive layer 62 cover the outer side of the first passivation layer 71. In this manner, the first conductive layer 61 is separated from the first semiconductor layer 30, the first conductive layer 61 can only apply a force due to an electric field, and is not directly conductively connected to the first semiconductor layer 30. Similarly, the second conductive layer 62 can only apply a force due to an electric field to the second semiconductor layer 10, and is not directly conductively connected to the second semiconductor layer 10.

[0044]

[0055] FIG. 4 illustrates the working principle of the conductive layer according to an embodiment of the present application. The first conductive layer 61 is electrically connected to the first electrode 40. The second conductive layer 62 is electrically connected to the second electrode 50. The first conductive layer 61 is electrically isolated from the second conductive layer 62. In this way, the first conductive layer 61 and the first electrode 40 have the same voltage, and the second conductive layer 62 and the second electrode 50 have the same voltage. When the light source device operates, the first conductive layer 61 can form an electric field (a positive electric field, e.g., “+”) toward the inside of the first semiconductor layer 30, and the second conductive layer 62 can form an electric field (a negative electric field, e.g., “-”) toward the side of the second semiconductor layer 10 when the light source device operates. According to the relationship between the moving direction of carriers (holes and electrons) and the direction of the electric field, the holes in the first semiconductor layer 30 are repelled by the positive voltage in the first conductive layer 61 and move away from the surface non-radiative recombination centers on the side surface of the first semiconductor layer 30, thereby reducing the probability that the holes are captured by the surface non-radiative recombination centers. Similarly, the electrons in the second semiconductor layer 10 are repelled by the negative voltage in the second conductive layer 62 and move away from the surface non-radiative recombination centers on the side surface of the second semiconductor layer 10, thereby reducing the probability that the electrons are captured by the surface non-radiative recombination centers. The action force of this electric field can reduce the cases in which the carriers are captured by the surface non-radiative recombination centers of the first semiconductor layer 30 and the surface non-radiative recombination centers of the second semiconductor layer 10 when the light source element emits light. More electrons and holes are involved in the recombination and light emission process, thereby improving the light emission efficiency of the light source element. In this way, the light source element still has high light emission efficiency at a low current density.

[0045]

[0056] In an optional solution, the first conductive layer 61 further covers the side surface of the light emitting layer 20. In this way, the electric field applied by the first conductive layer 61 acts on the light emitting layer 20, thereby reducing the trapping of holes by the surface non-radiative recombination centers of the light emitting layer 20, and the light emitting efficiency of the light source device can be further improved. Alternatively, the second conductive layer 62 may cover the side surface of the light emitting layer 20, and the same effect can be obtained.

[0046]

[0057] In the manner in which the first electrode 40 and the second electrode 50 respectively supply power to the first conductive layer 61 and the second conductive layer 62, the first conductive layer 61 and the second conductive layer 62 can be supplied with power when the light source element operates, thereby simplifying the structure of the light source element. However, it should be understood that the above manner of supplying power to the first conductive layer 61 and the second conductive layer 62 is only a specific power supply manner. The first conductive layer 61 and the second conductive layer 62 may be supplied with power in other ways. For example, the light source element may further include a third electrode and a fourth electrode. The third electrode is connected to the first conductive layer 61, and the fourth electrode is connected to the second conductive layer 62. When connected to the circuit board 300, the third electrode and the fourth electrode are each connected to the circuit layer of the circuit board 300. In this manner, the first conductive layer 61 and the second conductive layer 62 may be supplied with power.

[0047]

[0058] In order to facilitate the arrangement of the first conductive layer 61 and the second conductive layer 62, the first semiconductor layer 30, the light emitting layer 20, and the second semiconductor layer 10 are inverted trapezoid structures. For example, the first semiconductor layer 30 is inverted trapezoid structure. The area of ​​the top surface of the first semiconductor layer 30 is larger than the area of ​​the bottom surface of the first semiconductor layer 30. Similarly, the light emitting layer 20 and the first semiconductor layer 30 are also inverted trapezoid structures. When the above structure is adopted, the above layer structure forms a certain gradient and promotes the formation of the conductive layer.

[0048]

[0059] In an optional solution, the first semiconductor layer 30, the light emitting layer 20 and the second semiconductor layer 10 may be an isosceles trapezoidal structure to facilitate the preparation of the conductive layer by using a symmetrical structure.

[0049]

[0060] In an optional solution, the side surfaces of the first semiconductor layer 30, the light emitting layer 20, and the second semiconductor layer 10 have an inclination angle between 45° and 80° with respect to the light output surface. For example, the included angle between the side surfaces of the first semiconductor layer 30, the light emitting layer 20, and the second semiconductor layer 10 and the light output surface may be different angles, such as 45°, 60°, and 90°.

[0050]

[0060] It should be understood that the structures of the first semiconductor layer 30, the light emitting layer 20, and the second semiconductor layer 10 shown in Fig. 3 are merely specific examples. In addition to the shapes shown in Fig. 3, other shapes of the first semiconductor layer 30, the light emitting layer 20, and the second semiconductor layer 10 may also be applicable to this embodiment of the present application. For example, only the first semiconductor layer 30 may have an inverted trapezoid structure, or only the second semiconductor layer 10 may have an inverted trapezoid structure.

[0051]

[0062] In an optional solution, the light source element further includes a second passivation layer 72 covering the outside of the conductive layer 60. The second passivation layer 72 is disposed outside the conductive layer 60 and seals the conductive layer 60 to avoid exposure of the conductive layer 60. This reduces the risk of oxidation of the conductive layer 60 and improves the reliability of the conductive layer 60. See FIG. 3. When forming the second passivation layer 72, a protrusion (not shown) is formed to fill the gap between the first conductive layer 61 and the second conductive layer 62. The first conductive layer 61 and the second conductive layer 62 are electrically isolated by the protrusion, thereby improving the insulating effect between the first conductive layer 61 and the second conductive layer 62. In addition, the second passivation layer 72 and the first passivation layer 71 may further form a structure to protect each layer structure (the first semiconductor layer 30, the light emitting layer 20, and the second semiconductor layer 10) of the light source element, thereby improving the safety of the above layer structure.

[0052]

[0063] 5 shows a modified structure based on the light source element shown in FIG. 3. For some reference numbers shown in FIG. 5, please refer to the same reference numbers shown in FIG. 3. In addition to the conductive layer 60 being used as a structure for applying an electric field, the surface of the conductive layer 60 facing the first semiconductor layer 30 and the second semiconductor layer 10 is a reflective surface. For example, the surface of the first conductive layer 61 facing the first semiconductor layer 30 is a first reflective surface, and the surface of the second conductive layer 62 facing the second semiconductor layer 10 is a second reflective surface.

[0053]

[0064] In the case where the light source element emits light, please refer to the straight line of the arrow in FIG. 5. The straight line represents the emission direction of a part of the light. A part of the light is emitted from the side surface of the light source element (the side surface of the first semiconductor layer 30, the side surface of the light emitting layer 20, and the side surface of the second semiconductor layer 10), and may affect the amount of light output from the light output surface. Therefore, when the conductive layer 60 is provided, the surface of the first conductive layer 61 facing the first semiconductor layer 30 is used as the first reflecting surface. The light emitted from the side surface of the first semiconductor layer 30 is reflected by the first reflecting layer and then emitted from the light output surface, so that the amount of light output from the light output surface can be increased. Similarly, the light emitted from the side surface of the second semiconductor layer 10 can also be reflected by the second reflecting layer and emitted from the light output surface.

[0054]

[0065] Please refer to FIG. 5. A part of the second semiconductor layer 10 protrudes outside the light emitting layer 20. In order to further reduce the light emitted from the other surface than the light emitting surface, the second conductive layer 62 covers at least a part of the surface of the second semiconductor layer 10 that is remote from the light emitting surface. Similarly, the first conductive layer 61 covers at least a part of the surface of the first semiconductor layer 30 that is remote from the light emitting surface. In this way, the light emitted from the bottom surface (the surface remote from the light emitting surface) of the first semiconductor layer 30 and the bottom surface (the surface remote from the light emitting surface) of the second semiconductor layer 10 can be reflected back into the light source element by the first reflecting surface and the second reflecting surface. Therefore, more light is reflected to the light emitting surface of the light source element by the first reflecting surface and the second reflecting surface.

[0055]

[0066] It can be understood from the above description that the light source element provided in this embodiment of the present application not only has the effect of the light source element shown in FIG. 3, but also uses the reflective surfaces (first and second reflective surfaces) of the conductive layer to cover the side surfaces of the light source element, and can also cover at least a portion of each of the surfaces of the first semiconductor layer 30 and the second semiconductor layer 10 that are away from the light output surface, thereby reducing the light emitted from another surface of the light source element, improving the amount of light output from the light output surface, and further improving the luminous efficiency of the light source element.

[0056]

[0067] Figure 6 shows a modified structure based on the light source element shown in Figure 3 or Figure 5. For some reference numbers shown in Figure 6, please refer to the same reference numbers shown in Figure 3.

[0057]

[0068] When light is emitted from the light output surface of the second semiconductor layer 10, the refractive index of the second semiconductor layer 10 is greater than that of air, so the light at a certain angle will be totally reflected at the light output surface. Total reflection means that when light is incident from a medium with a high refractive index to a medium with a low refractive index, if the incident angle is greater than the critical angle, the refracted light will disappear and all the incident light will be reflected and will not enter the medium with the low refractive index. If the refractive indexes of the two media are similar, a larger critical angle indicates a lower probability of total reflection. Therefore, an anti-reflective coating layer 80 is disposed on the light output surface of the second semiconductor layer 10. See the structure shown in FIG. 6. The anti-reflective coating layer 80 is attached to the light output surface of the second semiconductor layer 10 and covers the light output surface of the second semiconductor layer 10. The light emitted from the light output surface of the second semiconductor layer 10 enters the anti-reflective coating layer. If an anti-reflective coating layer is provided, (Refractive index of air)<(refractive index of anti-reflective coating layer 80)<(refractive index of second semiconductor layer 10). That is, the refractive index of the anti-reflective coating layer 80 is between the refractive index of air and the refractive index of the second semiconductor layer 10. In this way, the critical angle of total reflection between the anti-reflective coating layer 80 and air is large, thereby reducing the cases of total reflection and allowing more light to be emitted from the anti-reflective coating layer 80 into the air, and increasing the amount of light output from the light source element.

[0058]

[0069] In an optional solution, the anti-reflective coating layer 80 is a layer structure with a gradient refractive index, and the refractive index of the anti-reflective coating layer gradually decreases in the direction away from the light emitting layer 20. For example, the anti-reflective coating layer 80 may be made of a SiOxNy material, where x and y are positive integers. The ratio of element O and element N in SiOxNy is adjusted, so that the refractive index of the anti-reflective coating layer 80 prepared using the SiOxNy material changes from being close to the refractive index of the second semiconductor layer 10 to being close to the refractive index of the air in the external space. The refractive index of the anti-reflective coating layer 80 gradually decreases in the direction from the second semiconductor layer 10 toward the external air. When the above-mentioned structure is used, the refractive index of the side of the anti-reflective coating layer 80 that is close to the second semiconductor layer 10 is equal to or smaller than the refractive index of the second semiconductor layer 10, and the refractive index of the side that is close to the air is equal to or larger than the refractive index of the air. In the process of light propagation, the use of the antireflective coating layer 80 reduces the difference between the refractive indexes of adjacent layer structures (the second semiconductor layer 10 and the antireflective coating layer 80, and the antireflective coating layer 80 and the air), thereby reducing the total reflected light and improving the light output efficiency.

[0059]

[0070] In an optional solution, the anti-reflective coating layer 80 covers the first passivation layer 71, the second conductive layer 62, and the second passivation layer 72. See the structure shown in FIG. 6. When the anti-reflective coating layer 80 covers the aforementioned layer structure, the size of the anti-reflective coating layer 80 is larger than that of the second semiconductor layer 10, so that more light can be emitted through the anti-reflective coating layer 80, thereby improving the light output efficiency of the light source element. Furthermore, when the aforementioned structure is used, the anti-reflective coating layer 80 covers the exposed surface of the conductive layer, and the anti-reflective coating layer 80, the second passivation layer 72, and the first passivation layer 71 form an insulating protection layer that covers the first conductive layer 61 and the second conductive layer 62. In this manner, the first conductive layer 61 and the second conductive layer 62 are formed in a sealed space, thereby reducing the risk of oxidation of the first conductive layer 61 and the second conductive layer 62 and improving the reliability of the first conductive layer 61 and the second conductive layer 62.

[0060]

[0071] Figure 7 shows a modified structure based on the light source element shown in Figure 3. For some reference numbers in Figure 7, please refer to the same reference numbers in Figure 3.

[0061]

[0072] Please refer to the schematic diagram of the application scenario shown in FIG. 1. When the light source element is used, it needs to emit red, green or blue light. However, when the structure shown in FIG. 3 is used, the light emitted by the light source element is a single light. In order to realize light emission of different colors such as red, blue and green, the light source element provided in this embodiment of the present application further includes a QD (quantum dot) material layer. The QD material layer 90 covers the light output surface of the second semiconductor layer 10. After the light emitted from the second semiconductor layer 10 enters the QD material layer 90, the QD material layer 90 is excited to generate light of another color. For example, if the light emitted from the second semiconductor layer 10 is blue light, the QD material is excited by using the blue light, and red light is generated by color conversion. Furthermore, by adjusting the chemical composition of the QD material layer 90, green light can also be generated after excitation by using blue light. The chemical composition of the QD material layer 90 is known, and the details will not be described again here.

[0062]

[0073] In an optional solution, a plurality of filling holes are provided on the light output surface of the second semiconductor layer 10. The QD material layer 90 has a protrusion 91 filled in the filling hole. When the QD material layer 90 fits the second semiconductor layer 10, the fitting between the protrusion 91 and the filling hole increases the contact area between the QD material layer 90 and the second semiconductor layer 10, thereby increasing the connection strength between the QD material layer 90 and the second semiconductor layer 10. This ensures the reliability of the QD material layer 90 after the QD material layer 90 is coated on the light output surface of the second semiconductor layer 10. In addition, when a plurality of filling holes are provided on the light output surface of the second semiconductor layer 10, the side of the filling hole can also output light. This can be equivalent to increasing the area of ​​the light output surface, which further increases the light output efficiency of the light source element.

[0063]

[0074] In an optional solution, the fill hole may be a hole of various shapes, such as a rectangular hole, a tapered hole, or a trapezoidal hole. For example, the fill hole may be a tapered hole or a trapezoidal hole. When the above-mentioned hole pattern is used, the side of the fill hole has a certain slope, so that the fill hole is filled when the QD material layer 90 is coated, thereby avoiding bubbles. Also, when a structure in which the fill hole has a certain slope is used, the incident angle of the light irradiating the side of the fill hole can be reduced, thereby reducing the case of total internal reflection and improving the light output efficiency.

[0064]

[0075] In optional solutions, the fill holes are arranged in an orderly fashion, for example, the fill holes may be evenly spaced or may alternately be densely and sparsely spaced, for example, the fill holes may be arranged in an array, or the fill holes may be arranged in a different manner, such as rings with nested layers.

[0065]

[0076] In an optional solution, the size of the QD material layer 90 is the same as the size of the light output surface of the second semiconductor layer 10, ensuring that all light emitted from the light output surface of the second semiconductor layer 10 can be emitted through the QD material layer 90. In this embodiment of the present application, it should be understood that the size of the QD material layer 90 should at least not be smaller than the size of the light output surface of the second semiconductor layer 10. The size of the QD material layer 90 may be larger than the size of the light output surface of the second semiconductor layer 10. For example, the size of the QD material layer 90 may be even larger than the size of the light output surface of the second semiconductor layer 10. The size of the QD material layer 90 is the size of the surface of the QD material layer 90 that faces the second semiconductor layer 10.

[0066]

[0077] It can be understood from the above description that in addition to realizing the effect of the light source element shown in FIG. 3, the light source element shown in FIG. 7 may further emit light of different colors compared to the light source element shown in FIG. 3. When the display device shown in FIG. 1 is formed, some of the light source elements may be the light source elements shown in FIG. 3, and some of the light source elements may be the light source elements shown in FIG. 7. In this way, the display device can emit light of different colors, such as red, blue, and green. Indeed, the light source element provided in this embodiment of the present application may further emit light of another color according to the conditions of the display device, and only needs to adjust the chemical composition of the QD material layer 90.

[0067]

[0078] Fig. 8 shows a modified structure based on the light source element shown in Fig. 3. For some reference numbers in Fig. 8, please refer to the same reference numbers in Fig. 3. The light source element shown in Fig. 8 can be considered as a combination of the light source elements shown in Figs. 6 and 7.

[0068]

[0079] 3, the light source device further includes an anti-reflective coating layer 80 and a QD material layer 90. The QD material layer 90 is disposed between the anti-reflective coating layer 80 and the second semiconductor layer 10 and covers the light output surface of the second semiconductor layer 10.

[0069]

[0080] In an optional solution, the antireflective coating layer 80 covers the QD material layer 90. When the antireflective coating layer 80 is formed, the sides of the QD material layer 90 are covered, and light emitted from either surface of the antireflective coating layer 80 can be emitted through the antireflective coating layer 80.

[0070]

[0081] The refractive index of the anti-reflective coating layer 80 shown in FIG. (Refractive index of air)<(Refractive index of anti-reflective coating layer 80)<(Refractive index of QD material layer 90) That is, the refractive index of the anti-reflective coating layer 80 is between the refractive index of air and the refractive index of the QD material layer 90. In this way, the critical angle of total reflection between the anti-reflective coating layer 80 and the air is increased, thereby reducing the case of total reflection and allowing more light to be emitted from the anti-reflective coating layer 80 into the air, and increasing the amount of light output from the light source element.

[0071]

[0082] In an optional solution, the anti-reflective coating layer 80 is a layer structure with a gradient refractive index, and the refractive index of the anti-reflective coating layer gradually decreases in the direction away from the light emitting layer 20. The refractive index of the side of the anti-reflective coating layer 80 that is close to the QD material layer 90 is equal to or smaller than the refractive index of the second semiconductor layer, and the refractive index of the side that is close to air is equal to or larger than the refractive index of air. In the process of light propagation, by using the anti-reflective coating layer 80, the difference between the refractive indexes of the adjacent layer structures (QD material layer 90 and the anti-reflective coating layer 80, and the anti-reflective coating layer 80 and the air) is reduced, thereby reducing the light of total reflection and improving the light output efficiency.

[0072]

[0083] In an optional solution, an anti-reflective coating layer 80 can further cover the first passivation layer 71, the second conductive layer 62 and the first passivation layer 71. For details, please refer to the related description of FIG. 7. The details will not be described again here.

[0073]

[0084] To facilitate understanding of the light source element shown in FIG. 8, the preparation process of the light source element will be described in detail below.

[0074]

[0085] Step 001: Epitaxial growth: Epitaxial structures such as a first semiconductor layer 30, a light emitting layer 20, and a second semiconductor layer 10 are sequentially grown on the surface of a substrate to prepare a basic layer structure of a light source device.

[0075]

[0086] Step 002: Etching step: The first semiconductor layer 30, the light emitting layer 20, and the second semiconductor layer 10 are etched by using an etching method, so that the widths of the first semiconductor layer 30, the light emitting layer 20, and the second semiconductor layer 10 are sequentially increased, and an inclined side surface is formed. Specifically, the width gradually increases in the direction of the first semiconductor layer 30, the light emitting layer 20, and the second semiconductor layer 10, so that the light source element has an inclined side surface. For example, the inclination angle is 60 degrees.

[0076]

[0087] Step 003: Preparation of first passivation layer 71 and electrodes: Deposit a first passivation layer 71 on the surfaces and side surfaces of the first semiconductor layer 30, the light emitting layer 20, and the second semiconductor layer 10, prepare a first electrode 40 on the surface of the first semiconductor layer 30, and prepare a second electrode 50 on the surface of the second semiconductor layer 10 that is exposed after etching.

[0077]

[0088] Step 004: Preparation of conductive layer: depositing a metal material on the side of the second semiconductor layer 10 to form a second conductive layer 62; and depositing a metal material on the surface and side of the first semiconductor layer 30 and the light emitting layer 20 to form a second conductive layer 62, where the first conductive layer 61 and the second conductive layer 62 are electrically insulated.

[0078]

[0089] The first semiconductor layer 30 and the light emitting layer 20 are covered by a first conductive layer 61, and the second semiconductor layer 10 is covered by a second conductive layer 62. The conductive layer is made of a highly reflective metal thin film material and concentrates the light emitted from the light emitting layer 20 to the light output surface of the second semiconductor layer 10 for emission, thereby reducing the proportion of light output from the side.

[0079]

[0090] STEP 005: Preparing the second passivation layer 72: The second passivation layer 72 is deposited on the outside of the conductive layer.

[0080]

[0091] Step 006: Removal of substrate: The formed layer structure is transferred onto the wafer and then the original substrate is removed, i.e. the layer structure is inverted so that the second semiconductor layer 10 is on top of the first semiconductor layer 30.

[0081]

[0092] Step 007: Thinning: Etch the second semiconductor layer 10 by using an etching method to thin the second semiconductor layer 10. After the thinning, the thickness of the first semiconductor layer 30 is 200 nm, the thickness of the light emitting layer 20 is 100 nm, and the thickness of the second semiconductor layer 10 is 2.5 μm. And the total thickness of the first semiconductor layer 30, the light emitting layer 20, and the second semiconductor layer 10 is less than 3 μm.

[0082]

[0093] Step 008: Preparation of filling holes: By using photoetching or nanoimprinting, regularly arranged filling holes are etched on the surface of the second semiconductor layer 10. Specifically, regularly arranged circular filling holes are provided on the surface of the second semiconductor layer 10. The depth of the filling holes is 500 nm, the diameter is 500 nm, and the spacing is 1 μm.

[0083]

[0094] Step 009: QD filling: Coat the surface of the second semiconductor layer 10 with QD material, so that all the filling holes on the surface of the second semiconductor layer 10 are filled with QD material. The filling holes are filled with the QD material layer 90, so that the contact area between the QD material layer 90 and the second semiconductor layer 10 is increased and the stability of the QD material layer 90 is improved.

[0084]

[0095] Step 010: Forming anti-reflective coating layer 80: Depositing a layer of anti-reflective coating material having a gradient refractive index on the light-emitting surface of the second semiconductor layer 10 to form the anti-reflective coating layer 80.

[0085]

[0096] The thickness of the antireflective coating layer 80 is 1 μm. The antireflective coating layer 80 is prepared from a thin film material having a gradient refractive index, and the refractive index of the antireflective coating layer 80 gradually decreases in a direction away from the light emitting layer 20. For example, the antireflective coating layer 80 may be made of a SiOxNy material, where x and y are positive integers. The ratio of element O and element N in SiOxNy is adjusted, so that the refractive index of the antireflective coating layer 80 prepared using the SiOxNy material changes from being close to the refractive index of the second semiconductor layer 10 to being close to the refractive index of the air in the external space. The refractive index of the antireflective coating layer 80 gradually decreases in a direction in which the second semiconductor layer 10 faces the external air. When the above-mentioned structure is used, the refractive index of the side of the antireflective coating layer 80 that is close to the second semiconductor layer 10 is equal to or smaller than the refractive index of the second semiconductor layer 10, and the refractive index of the side that is close to the air is equal to or larger than the refractive index of the air. In the process of light propagation, the use of the antireflective coating layer 80 reduces the difference between the refractive indexes of adjacent layer structures (the second semiconductor layer 10 and the antireflective coating layer 80, and the antireflective coating layer 80 and the air), thereby reducing the total reflected light and improving the light output efficiency.

[0086]

[0097] It can be understood from the above description that the thickness of the light source element prepared using the above preparation method is less than 3 μm. The side area of ​​the light source element is reduced, and the non-radiative recombination of carriers at the surface non-radiative recombination center at the side of the light source element is reduced, thereby improving the light emission efficiency and reducing the proportion of light emitted from the side.

[0087]

[0098] Furthermore, the light source element has slanted side surfaces, which are covered by a conductive layer and have the effect of concentrating the light so that it can be reflected towards the front surface of the light source element for emission. This reduces the proportion of light output from the side surfaces of the light source element and concentrates the angle of the emitted light, improving the normal brightness.

[0088]

[0099] The conductive layer is connected to an electrode. The surface of the conductive layer is energized, and the distribution of carriers in the light source element can be adjusted and controlled using an electric field. The first conductive layer 61 moves carriers in the first semiconductor layer 30 away from the side surface of the first semiconductor layer 30, and the second conductive layer 62 moves carriers in the second semiconductor layer 10 away from the side surface of the second semiconductor layer 10, thereby avoiding non-radiative recombination of carriers at the surface non-radiative recombination centers of the side surface, thereby improving the light emission efficiency.

[0089]

[0100] The QD material layer 90 is filled into the filling holes in the second semiconductor layer 10. This increases the contact area between the emitted light and the QD material layer 90, improving the color conversion efficiency. Furthermore, by using the absorption principle of the filling holes, the QD material layer 90 is stably distributed and has high mechanical strength, thereby improving the reliability of the light source element.

[0090]

[0101] The anti-reflective coating layer 80 can improve the light output efficiency of the light source element, isolate moisture and oxygen, and protect the QD material layer 90.

[0091]

[0102] When the light emission efficiency of the light source element is significantly affected by the trapping of holes by the surface non-radiative recombination centers, the conductive layer may be arranged only for the trapping of holes by the surface non-radiative recombination centers. For example, see FIG. 9. The conductive layer includes a third conductive layer 63. The third conductive layer 63 is located outside the side surfaces of the first semiconductor layer 30, the light emitting layer 20, and the second semiconductor layer 10. The third conductive layer 63 is electrically connected to the first electrode 40 and insulated from the second electrode 50. When the first electrode 40 transmits electricity to the third conductive layer 63, the positive electric field applied by the third conductive layer 63 can move the holes in the first semiconductor layer 30 away from the surface non-radiative recombination centers at the side surfaces of the first semiconductor layer 30. FIG. 10 shows another modified structure based on the light source element shown in FIG. 3. The conductive layer includes only the first conductive layer 61. The first conductive layer 61 is electrically connected to the first electrode 40. A positive electric field applied by the first conductive layer 61 can move holes in the first semiconductor layer 30 away from surface non-radiative recombination centers at the side surfaces of the first semiconductor layer 30.

[0092]

[0103] When the conductive layer has a reflective surface, using FIG. 9 as an example, the third conductive layer 63 covers at least a part of each of the surfaces of the first semiconductor layer 30 and the second semiconductor layer 10 that are distant from the light-emitting surface. For example, the third conductive layer 63 covers only the surface of the first semiconductor layer 30 that is distant from the light-emitting surface, or covers only the surface of the second semiconductor layer 10 that is distant from the light-emitting surface, or covers both the surfaces of the first semiconductor layer 30 and the second semiconductor layer 10 that are distant from the light-emitting surface. Using FIG. 10 as an example. Light is reflected only by the first reflective surface of the first conductive layer 61. For the specific reflection principle, please refer to the related description of FIG. 5.

[0093]

[0104] When the light emission efficiency of the light source device is significantly affected by the electron capture by the surface non-radiative recombination center, the conductive layer may be arranged only for the electron capture by the surface non-radiative recombination center. For example, see FIG. 11. The conductive layer includes a third conductive layer 63. The third conductive layer 63 is located on the outside of the side surface of the first semiconductor layer 30, the light emitting layer 20, and the second semiconductor layer 10. The third conductive layer 63 is electrically connected to the second electrode 50 and insulated from the first electrode 40. When the second electrode 50 transmits electricity to the third conductive layer 63, the negative electric field applied by the third conductive layer 63 can move the electrons in the second semiconductor layer 10 away from the surface non-radiative recombination center at the side surface of the second semiconductor layer 10. FIG. 10 shows another modified structure based on the light source device shown in FIG. 3. The conductive layer includes only the second conductive layer 62. The second conductive layer 62 is electrically connected to the first electrode 40. A negative electric field applied by the second conductive layer 62 can move electrons in the second semiconductor layer 10 away from surface non-radiative recombination centers at the sides of the second semiconductor layer 10.

[0094]

[0105] FIG. 9 is used as an example. When the conductive layer has a reflective surface, the third conductive layer 63 covers at least a part of each of the surfaces of the first semiconductor layer 30 and the second semiconductor layer 10 that are remote from the light output surface. For example, the third conductive layer 63 covers only the surface of the first semiconductor layer 30 that is remote from the light output surface, or covers only the surface of the second semiconductor layer 10 that is remote from the light output surface, or covers both the surfaces of the first semiconductor layer 30 and the second semiconductor layer 10 that are remote from the light output surface. All of these may be applicable to the light source element provided in this embodiment of the present application. FIG. 10 is used as an example. The light is reflected only by the second reflective surface of the second conductive layer 62. For the specific reflection principle, please refer to the related description of FIG. 5.

[0095]

[0106] It can be seen from the light source element shown in FIG. 3 and FIG. 9-FIG. 12 that the light source element provided in this embodiment of the present application can be adjusted and controlled to move carriers away from the surface non-radiative recombination centers on at least one side of the first semiconductor layer and the second semiconductor layer by using the arranged conductive layer, by the force of the electric field. In this way, the carriers move away from the surface non-radiative recombination centers of the semiconductor layers under the action of the force of the electric field, thereby reducing the case where the carriers are captured by the surface non-radiative recombination centers, and improving the light output efficiency of the light source element. In addition, the conductive layer covers at least the side of the first semiconductor layer 30 and the side of the second semiconductor layer 10. The conductive layer is electrically connected to at least one of the first electrode 40 and the second electrode 50. This simplifies the structure of the entire light source element. The conductive layer shown in FIG. 3 includes a first conductive layer 61 and a second conductive layer 62. The first conductive layer 61 is connected to the first electrode 40, and the second conductive layer 62 is connected to the second electrode 50. Alternatively, the conductive layer shown in Figures 9 and 10 is connected only to the first electrode 40, and the conductive layer shown in Figures 11 and 12 is connected only to the second electrode 50. The first electrode 40 or the second electrode 50 is used as a connection terminal of the conductive layer. By using the conductive layer, when the light source element is used, a force due to an electric field is applied to the carriers close to the surface non-radiative recombination center, so that the carriers move away from the surface non-radiative recombination center, thereby improving the light emission efficiency of the light source element.

[0096]

[0107] An embodiment of the present application further provides a display device. The display device includes a chip and a light source element according to any one of the above. The chip is configured to control the light source element to emit light. In the above solution, the side of the semiconductor layer of the light source element has a surface non-radiative recombination center. When the light source element operates, the surface non-radiative recombination center captures carriers in the semiconductor layer. This reduces the light emission efficiency of the light source element. To solve the above problem, the light source element of the present invention is further provided with a conductive layer. The conductive layer can adjust and control the carriers to move away from the surface non-radiative recombination centers of the first semiconductor layer and the second semiconductor layer by the force of the electric field. In this way, the carriers move away from the surface non-radiative recombination centers of the semiconductor layer under the action of the force of the electric field, thereby reducing the cases in which the carriers are captured by the surface non-radiative recombination centers and improving the light output efficiency of the light source element.

[0097]

[0108] The present embodiment further provides a mobile terminal. The mobile terminal includes a housing and a display device disposed in the housing. In the above solution, the side of the semiconductor layer of the light source element has a surface non-radiative recombination center. When the light source element operates, the surface non-radiative recombination center captures carriers in the semiconductor layer. This reduces the light emission efficiency of the light source element. To solve the above problem, the light source element of the present invention is further provided with a conductive layer. The conductive layer can adjust and control the carriers by the force of the electric field to move away from the surface non-radiative recombination centers of the first semiconductor layer and the second semiconductor layer. In this way, the carriers move away from the surface non-radiative recombination centers of the semiconductor layer under the action of the force of the electric field, thereby reducing the cases in which the carriers are captured by the surface non-radiative recombination centers and improving the light output efficiency of the light source element.

[0098]

[0109] It is obvious that a person skilled in the art can make various modifications and variations to the present application without departing from the spirit and scope of the present application. The present application is intended to cover these modifications and variations of the present application, provided that they fall within the scope of protection defined in the following claims and their equivalent technologies.

Claims

1. A light source element including a first semiconductor layer, a light emitting layer, and a second semiconductor layer, which are stacked together, the light emitting layer being located between the first semiconductor layer and the second semiconductor layer, a surface of the second semiconductor layer that is away from the light emitting layer being a light emitting surface, and a side surface of the first semiconductor layer and a side surface of the second semiconductor layer each having a surface non-radiative recombination center; and The light source element further includes a conductive layer, the conductive layer configured to align and control carriers away from at least one of two surface non-radiative recombination centers by a force caused by an electric field; The light source element further includes a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer; the conductive layer includes a first conductive layer and a second conductive layer that are electrically isolated; the first conductive layer is disposed on an outer side of the first semiconductor layer, and the second conductive layer is disposed on an outer side of the second semiconductor layer; The first conductive layer is electrically connected to the first electrode, and the second conductive layer is electrically connected to the second electrode.

2. A light source element including a first semiconductor layer, a light emitting layer, and a second semiconductor layer, which are stacked together, the light emitting layer being located between the first semiconductor layer and the second semiconductor layer, a surface of the second semiconductor layer that is away from the light emitting layer being a light emitting surface, and a side surface of the first semiconductor layer and a side surface of the second semiconductor layer each having a surface non-radiative recombination center; and The light source element further includes a conductive layer, the conductive layer configured to align and control carriers away from at least one of two surface non-radiative recombination centers by a force caused by an electric field; The light source element further includes a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer; the conductive layer includes a third conductive layer, the third conductive layer being disposed on outer sides of the first semiconductor layer, the light emitting layer, and the second semiconductor layer; and the third conductive layer is electrically connected to the first electrode; A light source element, wherein a surface of the conductive layer facing the first semiconductor layer and the second semiconductor layer is a reflective surface.

3. A light source element including a first semiconductor layer, a light emitting layer, and a second semiconductor layer, which are stacked together, the light emitting layer being located between the first semiconductor layer and the second semiconductor layer, a surface of the second semiconductor layer that is away from the light emitting layer being a light emitting surface, and a side surface of the first semiconductor layer and a side surface of the second semiconductor layer each having a surface non-radiative recombination center; and The light source element further includes a conductive layer, the conductive layer configured to align and control carriers away from at least one of two surface non-radiative recombination centers by a force caused by an electric field; The light source element further includes a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer; the conductive layer includes a third conductive layer, the third conductive layer being disposed on outer sides of the first semiconductor layer, the light emitting layer, and the second semiconductor layer; and the third conductive layer is electrically connected to the second electrode; A light source element, wherein a surface of the conductive layer facing the first semiconductor layer and the second semiconductor layer is a reflective surface.

4. 4. The light source element according to claim 1, wherein the conductive layer covers a side surface of the first semiconductor layer and a side surface of the second semiconductor layer.

5. 2. The light source element according to claim 1, wherein a surface of the conductive layer that faces the first semiconductor layer and the second semiconductor layer is a reflective surface.

6. 6. A light source element according to claim 5, wherein the reflective surface of the conductive layer covers at least a portion of each of the surfaces of the first semiconductor layer and the second semiconductor layer that is away from the light output surface.

7. 7. The light source element according to claim 1, further comprising a first passivation layer covering a side surface of the first semiconductor layer, a side surface of the light emitting layer, and a side surface of the second semiconductor layer; and The conductive layer covers the outside of the first passivation layer.

8. 8. The light source element according to claim 1, further comprising a second passivation layer covering an outer side of the conductive layer.

9. 9. The light source element according to claim 1, further comprising an anti-reflection coating layer disposed on the light output surface.

10. 10. The light source element according to claim 9, wherein the anti-reflective coating layer is a layer structure having a gradient refractive index, and the refractive index of the anti-reflective coating layer gradually decreases in a direction away from the light emitting layer.

11. 11. The light source element of claim 9 or 10, further comprising a QD material layer disposed between the anti-reflective coating layer and the second semiconductor layer, the QD material layer covering the light output surface of the second semiconductor layer.

12. 12. The light source element according to claim 11, wherein the light output surface of the second semiconductor layer is provided with a plurality of filling holes; and The QD material layer has a protrusion that fills the fill hole, the light source element.

13. 13. The light source element according to claim 12, wherein the fill holes are regularly arranged.

14. 14. The light source element according to claim 1, wherein the first semiconductor layer, the light emitting layer, and the second semiconductor layer are in an inverted trapezoidal structure.

15. 15. The light source element according to claim 14, wherein the side surfaces of the first semiconductor layer, the light emitting layer, and the second semiconductor layer have an inclination angle between 45° and 80° with respect to the light output surface.

16. 16. A display device comprising a chip and a light source element according to any one of claims 1 to 15, said chip being configured to control said light source element to emit light.

17. 17. A mobile terminal comprising a housing and a display device according to claim 16 disposed on the housing.

Images