Silicon carbide epitaxial substrate

JP7626066B2Active Publication Date: 2025-02-04MITSUMI ELECTRIC CO LTD
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Patent Information

Application Number
JP2021527544
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2019-06-19
Filing Date
2020-06-02
Publication Date
2025-02-04
Estimated Expiration
2040-06-02

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Abstract

A silicon carbide epitaxial substrate is provided with a silicon carbide substrate, a first silicon carbide epitaxial layer and a second silicon carbide epitaxial layer. The silicon carbide substrate has a first main surface and a second main surface opposite to the first main surface. The first silicon carbide epitaxial layer is in contact with the whole area of the first main surface. The second silicon carbide epitaxial layer is in contact with the whole area of the second main surface. The carrier concentration in the silicon carbide substrate is higher than that in each of the first silicon carbide epitaxial layer and the second silicon carbide epitaxial layer.
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Citation Information

Patent Citations

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    JP2005001899A

  • Susceptor

    JP2006060195A

  • Seventy five millimeter silicon carbide wafer with low warp, bow, and ttv

    JP2012214376A

  • Silicon carbide epitaxial wafer production method

    WO2016059670A1