Impedance matching film for radio wave absorber, film with impedance matching film for radio wave absorber, radio wave absorber, and laminate for radio wave absorber

By using an amorphous indium tin oxide mixture impedance matching film, the problem of insufficient durability of the λ/4 type radio wave absorber in high temperature environment is solved, and stable impedance matching and durability improvement in high temperature environment is achieved.

JP7626526B2Active Publication Date: 2025-02-07NITTO DENKO CORP
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Patent Information

Application Number
JP2019224077
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2018-12-12
Filing Date
2019-12-11
Publication Date
2025-02-07
Estimated Expiration
2039-12-11

AI Technical Summary

Technical Problem

In the prior art, the λ/4 type inorganic oxide film has insufficient durability in a high temperature environment and has failed to effectively evaluate its long-term durability in a high temperature environment.

Method used

A mixture containing amorphous indium oxide and tin oxide is used as an impedance matching film, with a Hall mobility of more than 5 cm²/V·s and a thickness of 16 nm to 100 nm. It is used in a λ/4 type radio wave absorber, combining a conductive layer and a dielectric layer to achieve impedance matching.

Benefits of technology

When used in high temperature environment for a long time, the impedance matching performance is maintained, the film deformation and cracking is reduced, the production cost is reduced, and the durability is improved.

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Abstract

To provide an impedance matching film for a radio wave absorber, which is advantageous in maintaining desired characteristics from the viewpoint of impedance matching when exposed in a high-temperature atmosphere for a long term.SOLUTION: An impedance matching film 10 includes, as a main component, a mixture of indium oxide and tin oxide having an amorphous structure. The impedance matching film 10 for impedance matching has a Hall mobility of 5 cm / (V s) or more. The impedance matching film 10 has a thickness of 16 nm or more and less than 100 nm.SELECTED DRAWING: Figure 1
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Citation Information

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