Semiconductor device manufacturing method

JP7628911B2Active Publication Date: 2025-02-12DENSO CORP +2
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Patent Information

Application Number
JP2021123266
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2021-07-28
Publication Date
2025-02-12
Estimated Expiration
2041-07-28

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Abstract

To anneal a gallium nitride semiconductor substrate at a temperature higher than 1200°C while suppressing deterioration of a gallium nitride semiconductor substrate.SOLUTION: A manufacturing method of a semiconductor device includes the steps of forming a protective film (18) made of aluminum nitride having at least one of an amorphous structure and a granular structure on a surface (10a) of a gallium nitride semiconductor substrate (10), and annealing the gallium nitride semiconductor substrate, the surface of which is covered with the protective film, at a temperature higher than 1200°C.SELECTED DRAWING: Figure 8
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Citation Information

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