SiC substrate and its manufacturing method

JP7628960B2Active Publication Date: 2025-02-12NGK CORP
View PDF 4 Cites 0 Cited by

Patent Information

Application Number
JP2021558317
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2019-11-20
Filing Date
2020-11-11
Publication Date
2025-02-12
Estimated Expiration
2040-11-11

Smart Images

  • Figure 0007628960000001
    Figure 0007628960000001
  • Figure 0007628960000002
    Figure 0007628960000002
  • Figure 0007628960000003
    Figure 0007628960000003
Patent Text Reader

Abstract

A SiC substrate 10 comprises a first surface 21a, a second surface 22a that is a surface located on an opposite side to the first surface 21a, and a center surface 20a in which the distance L1 from the first surface 21a as observed in the thickness direction and the distance L2 from the second surface 22a as observed in the thickness direction are the same as each other (i.e., L1 = L2). The density of crystal defects in each of the first surface 21a and the second surface 22a is smaller than that in the center surface 20a.
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • Single crystal silicon carbide and its production

    JP1999147794A

  • METHOD AND DEVICE FOR GROWING SINGLE CRYSTAL SiC

    JP2000053500A

  • Method for producing silicon carbide single crystal

    JP2001158696A

  • METHOD FOR MAKING SiC SINGLE CRYSTAL AND SiC SINGLE CRYSTAL

    JP2014043369A