Biaxially oriented SiC composite substrate and composite substrate for semiconductor devices

JP7628968B2Active Publication Date: 2025-02-12NGK CORP
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Patent Information

Application Number
JP2021573119
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2020-01-24
Filing Date
2021-01-15
Publication Date
2025-02-12
Estimated Expiration
2041-01-15

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Abstract

A biaxially-oriented SiC composite substrate 10 comprises: a first biaxially-oriented SiC layer 20 that includes a threading screw dislocation and a basal plane dislocation; and a second biaxially-oriented SiC layer 30 that is formed continuously from the first biaxially SiC layer 20 and that contains 1×1016 atoms / cm3 - 1×1019 atoms / cm3 of a rare earth element. The defect density of the surface of the second biaxially-oriented SiC layer 30 is smaller than the defect density of the first biaxially-oriented SiC layer 20.
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Citation Information

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