VERTICAL-CAVITY SURFACE-EMITTING LASER DEVICE, VERTICAL-CAVITY SURFACE-EMITTING LASER DEVICE ARRAY, VERTICAL-CAVITY SURFACE-EMITTING LASER MODULE, AND METHOD FOR MANUFACTURING VERTICAL-CAVITY SURFACE-EMITTING LASER DEVICE ARRAY

Abstract

[Problem] To provide a vertical cavity surface emitting laser element, a vertical cavity surface emitting laser element array, a vertical cavity surface emitting laser module, and a method for manufacturing a vertical cavity surface emitting laser element having small thermal resistance and capable of operating at high temperature. [Solution] A vertical cavity surface emitting laser element (100) according to the present technology comprises a first substrate (110), a second substrate (120), a first DBR layer (131), and a second DBR layer (132). The first substrate (110) is made of a first material and is provided with an active layer (115). The second substrate (120) is transmissive to light having a specific wavelength, is made of a second material different from the first substrate (110), and is bonded to the first substrate (110). The first DBR layer (131) is disposed on an opposite side of the first substrate (110) from the second substrate (120) and reflects the light of the wavelength. The second DBR layer (132) is disposed on an opposite side of the second substrate (120) from the first substrate (110) and reflects the light of the wavelength.

Description

[Technical field]

[0001] The present technology relates to a vertical cavity surface emitting laser element including a pair of DBRs, a vertical cavity surface emitting laser element array, a vertical cavity surface emitting laser module, and a method for manufacturing the vertical cavity surface emitting laser element. [Background technology]

[0002] A VCSEL (Vertical Cavity Surface Emitting Laser) element has a structure in which an active layer, where light is emitted, is sandwiched between a pair of Distributed Bragg Reflectors (DBRs). The DBR is a laminate of multiple alternating low-refractive index layers and high-refractive index layers, and generates laser oscillation by reflecting light of a specific wavelength.

[0003] However, in a long-wavelength VCSEL element having an active layer made of an InP-based material, there is no material that can be lattice-matched to InP and has a sufficient refractive index difference, making it difficult to form a semiconductor DBR with high optical reflectance and thermal conductivity on an InP substrate. For this reason, a technology has been developed in which a semiconductor DBR is formed on a substrate other than the InP substrate, such as a GaAs substrate, and the semiconductor DBR is wafer-bonded to the InP substrate (see, for example, Patent Document 1).

[0004] On the other hand, a non-conductive DBR can be fabricated using dielectric materials (SiO2, Ta2O5, Al2O3, a-Si, TiO2, etc.) that can easily produce a refractive index difference using a relatively inexpensive manufacturing method. For this reason, InP-based VCSELs equipped with dielectric DBRs using these dielectric materials have also been put to practical use. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2005-159071 A Summary of the Invention [Problem to be solved by the invention]

[0006] However, in the configuration of Patent Document 1, the semiconductor DBR is provided on the active layer side, which causes problems such as high thermal resistance and high resistance at the junction interface. Also, even when a dielectric DBR is used, the dielectric DBR has low thermal conductivity, which causes problems with heat dissipation.

[0007] In view of the above circumstances, an object of the present technology is to provide a vertical-cavity surface-emitting laser element that has small thermal resistance and is capable of high-temperature operation, a vertical-cavity surface-emitting laser element array, a vertical-cavity surface-emitting laser module, and a method for manufacturing a vertical-cavity surface-emitting laser element. [Means for solving the problem]

[0008] In order to achieve the above object, a vertical cavity surface emitting laser device according to an embodiment of the present technology includes a first substrate, a second substrate, a first DBR layer, and a second DBR layer. The first substrate is made of a first material and has an active layer formed thereon. The second substrate transmits light having a particular wavelength, is made of a second material different from that of the first substrate, and is bonded to the first substrate. The first DBR layer is provided on the first substrate opposite to the second substrate, and reflects light of the wavelength. The second DBR layer is provided on the second substrate on the opposite side to the first substrate, and reflects light of the wavelength.

[0009] According to this configuration, the first substrate and the second substrate having the active layer are provided between the first DBR layer and the second DBR layer. Therefore, heat generated in the active layer is dissipated through the second substrate located nearby, and a VCSEL element with low thermal resistance can be realized. In particular, even if the first substrate is made of a material with low thermal conductivity, it is possible to ensure heat dissipation by bonding the second substrate made of a material different from the first substrate.

[0010] The second material may be a material having a greater thermal conductivity than the first material.

[0011] The first material may be InP and the second material may be Si, SiC, AlN or GaN.

[0012] The first substrate may have the active layer formed by crystal growth on a base material made of InP.

[0013] The first material may be GaAs and the second material may be Si, SiC, AlN or GaN.

[0014] The first substrate may have the active layer formed by crystal growth on a base material made of GaAs.

[0015] The vertical cavity surface emitting laser element may have a current confinement structure formed by a tunnel junction.

[0016] The vertical cavity surface emitting laser element may have a light confinement structure formed by the tunnel junction.

[0017] The vertical cavity surface emitting laser element may have a current confinement structure formed by an oxidation treatment.

[0018] The vertical cavity surface emitting laser element may have a current confinement structure formed by ion implantation.

[0019] The vertical cavity surface emitting laser element may have a lens structure formed by a convex portion provided on the second substrate and the second DBR layer provided on the convex portion, and configured to focus incident light onto a region of the active layer between the first DBR layer and the second DBR layer.

[0020] the vertical cavity surface emitting laser element further comprises a third substrate that transmits light having the wavelength, is made of a third material different from the first substrate, and is bonded to the first substrate on an opposite side to the second substrate; The first DBR layer may be provided on the third substrate opposite to the first substrate.

[0021] the first DBR layer is a semiconductor DBR or a dielectric DBR; The second DBR layer may be a semiconductor DBR or a dielectric DBR.

[0022] The vertical cavity surface emitting laser element may emit laser light from the second DBR layer side.

[0023] The vertical cavity surface emitting laser element may emit laser light from the first DBR layer side.

[0024] In order to achieve the above object, a vertical cavity surface emitting laser element array according to an embodiment of the present technology includes an array of a plurality of vertical cavity surface emitting laser elements. The vertical cavity surface emitting laser element includes a first substrate made of a first material and having an active layer, a second substrate made of a second material different from the first substrate and transmitting light having a specific wavelength, the second substrate being bonded to the first substrate, a first Distributed Bragg Reflector (DBR) layer provided on the first substrate opposite the second substrate and reflecting light of the wavelength, and a second DBR layer provided on the second substrate opposite the first substrate and reflecting light of the wavelength. A plurality of vertical cavity surface emitting laser elements are arranged.

[0025] In order to achieve the above object, a vertical cavity surface emitting laser module according to an embodiment of the present technology includes a vertical cavity surface emitting laser element. The vertical cavity surface emitting laser element includes a first substrate made of a first material and having an active layer provided thereon, a second substrate made of a second material different from the first substrate, which transmits light having a specific wavelength and is bonded to the first substrate, a first DBR (Distributed Bragg Reflector) layer provided on the first substrate opposite the second substrate and reflecting light of the wavelength, and a second DBR layer provided on the second substrate opposite the first substrate and reflecting light of the wavelength. The second substrate is a circuit board.

[0026] In order to achieve the above object, a manufacturing method for a vertical cavity surface emitting laser element array according to an embodiment of the present technology includes forming a first substrate made of a first material and having an active layer provided thereon. A second substrate is formed that transmits light having a particular wavelength and is made of a second material different from the first substrate. The first substrate and the second substrate are bonded to each other to form a structure in which the first substrate and the second substrate are positioned between a first DBR (Distributed Bragg Reflector) layer that reflects light of the wavelength and a second DBR layer that reflects light of the wavelength. [Brief description of the drawings]

[0027] [Figure 1] 1 is a cross-sectional view of a VCSEL element according to a first embodiment of the present technology. [Diagram 2] FIG. 2 is a cross-sectional view of a partial configuration of the VCSEL element. [Diagram 3] 3A to 3C are schematic diagrams illustrating a method for manufacturing the VCSEL element. [Figure 4] 3A to 3C are schematic diagrams illustrating a method for manufacturing the VCSEL element. [Diagram 5] 3A to 3C are schematic diagrams illustrating a method for manufacturing the VCSEL element. [Figure 6] 3A to 3C are schematic diagrams illustrating a method for manufacturing the VCSEL element. [Figure 7] 3A to 3C are schematic diagrams illustrating a method for manufacturing the VCSEL element. [Figure 8]FIG. 2 is a cross-sectional view of a VCSEL device according to a first modified example of the first embodiment. [Figure 9] FIG. 4 is a cross-sectional view of a VCSEL device according to a second modified example of the first embodiment. [Figure 10] FIG. 11 is a cross-sectional view of a VCSEL device according to a third modified example of the first embodiment. [Figure 11] 11 is a cross-sectional view of a VCSEL element according to a second embodiment of the present technology. [Figure 12] 11 is a cross-sectional view of a VCSEL element according to a third embodiment of the present technology. [Figure 13] 11 is a cross-sectional view of a VCSEL element according to a fourth embodiment of the present technology. FIG. [Figure 14] FIG. 13 is a cross-sectional view of a VCSEL device according to a first modified example of the fourth embodiment. [Figure 15] FIG. 13 is a cross-sectional view of a VCSEL device according to a second modified example of the fourth embodiment. [Figure 16] 11 is a cross-sectional view of a VCSEL element array according to a fifth embodiment of the present technology. FIG. [Figure 17] FIG. 13 is a cross-sectional view of a VCSEL element array according to a modified example of the fifth embodiment. [Figure 18] 13 is a cross-sectional view of a VCSEL module according to a sixth embodiment of the present technology. FIG. [Figure 19] FIG. 13 is a cross-sectional view of a VCSEL module according to a modified example of the sixth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0028] A VCSEL (Vertical Cavity Surface Emitting Laser) element according to an embodiment of the present technology will be described.

[0029] [VCSEL element structure] Fig. 1 is a cross-sectional view of a VCSEL device 100 according to this embodiment, and Fig. 2 is a cross-sectional view of a portion of the VCSEL device 100. As shown in these figures, the VCSEL device 100 includes a first substrate 110, a second substrate 120, a first DBR layer 131, a second DBR layer 132, a first electrode 133, a second electrode 134, a dielectric film 135, and a metal layer 136.

[0030] 2, the first substrate 110 includes a first semiconductor layer 111, a second semiconductor layer 112, a third semiconductor layer 113, a fourth semiconductor layer 114, an active layer 115, a first tunnel junction layer 116, and a second tunnel junction layer 117. The first semiconductor layer 111 is formed on the second substrate 120, and the active layer 115 is formed on the first semiconductor layer 111. The second semiconductor layer 112 is formed on the active layer 115, and the third semiconductor layer 113 is formed on the second semiconductor layer 112.

[0031] The first tunnel junction layer 116 is formed on a partial region of the third semiconductor layer 113, and the second tunnel junction layer 117 is formed on the first tunnel junction layer 116. The fourth semiconductor layer 114 is formed on the third semiconductor layer 113 and the second tunnel junction layer 117, and covers the first tunnel junction layer 116 and the second tunnel junction layer 117.

[0032] The first semiconductor layer 111, the second semiconductor layer 112, and the fourth semiconductor layer 114 are made of a semiconductor material having a first semiconductor type, for example, n-InP. The third semiconductor layer 113 is made of a semiconductor material having a second semiconductor type, for example, p-InP.

[0033] The active layer 115 emits and amplifies spontaneous emission light. The active layer 115 has a multi quantum well (MQW) structure in which quantum well layers and barrier layers are alternately stacked, and the quantum well layers may be made of, for example, InGaAsP, AlGaInAs, InGaAs, or InAs, and the barrier layers may be made of, for example, GaAs, InGaAs, InGaAsP, or AlGaInAs. The active layer 115 is not limited to a quantum well structure, and may have a quantum dot structure made of InAs or the like.

[0034] The first tunnel junction layer 116 and the second tunnel junction layer 117 form a current confinement structure by a tunnel junction. The first tunnel junction layer 116 is made of a semiconductor material having a second semiconductor type, for example, p + The second tunnel junction layer 117 is made of a semiconductor material having a second semiconductor type, for example, n-InP. + -Made of InP.

[0035] Furthermore, the first tunnel junction layer 116 and the second tunnel junction layer 117 are not limited to InP, and may be made of InGaAsP or AlGaInAs. When the fourth semiconductor layer 114 is made of InP, it has a refractive index different from that of InGaAsP or AlGaInAs, so that the first tunnel junction layer 116 and the second tunnel junction layer 117 can generate an effect of concentrating light in the vicinity of the tunnel junction region (light constriction effect).

[0036] The first substrate 110 has the above-mentioned configuration. The first substrate 110 can be formed by forming each layer on a base material made of InP by doping and crystal growth.

[0037] The second substrate 120 is made of a material different from that of the first substrate 110, and is bonded to the first substrate 110. In Fig. 2, the bonding interface between the first substrate 110 and the second substrate 120 is shown as a bonding interface S. The material and thickness of the second substrate 120 are configured so as to transmit light having an emission wavelength (hereinafter, wavelength λ) of the VCSEL device 100. The second substrate 120 is preferably made of a material having a higher thermal conductivity than the material of the first substrate 110. For example, when the first substrate 110 is made of InP, the second substrate 120 can be made of Si, SiC, AlN, GaN, or the like.

[0038] In the VCSEL device 100, the constituent materials of the first substrate 110 and the second substrate 120 may be amorphous in the vicinity of the bonding interface S. In addition, the lattice constants of the first substrate 110 and the second substrate 120 may differ from each other across the bonding interface S.

[0039] The first DBR layer 131 is provided on the side of the first substrate 110 opposite to the second substrate 120, and functions as a DBR (Distributed Bragg Reflector) that reflects light of wavelength λ. The first DBR layer 131 can be formed by alternately laminating a plurality of low refractive index layers and high refractive index layers.

[0040] The first DBR layer 131 is a dielectric DBR, and the low refractive index layer may be made of, for example, SiO2, and the high refractive index layer may be made of, for example, Ta2O5. The first DBR layer 131 may also be a semiconductor DBR, and the low refractive index layer may be made of, for example, AlGaAs, and the high refractive index layer may be made of, for example, GaAs. The thicknesses of the low refractive index layer and the high refractive index layer are preferably each λ / 4.

[0041] The second DBR layer 132 is provided on the second substrate 120 on the opposite side to the first substrate 110, and functions as a DBR that reflects light of wavelength λ. The second DBR layer 132 can be formed by alternately laminating a plurality of low refractive index layers and high refractive index layers.

[0042] The second DBR layer 132 is a dielectric DBR, and the low refractive index layer may be made of, for example, SiO2, and the high refractive index layer may be made of, for example, Ta2O5. The second DBR layer 132 may also be a semiconductor DBR, and the low refractive index layer may be made of, for example, AlGaAs, and the high refractive index layer may be made of, for example, GaAs. The thicknesses of the low refractive index layer and the high refractive index layer are preferably each λ / 4.

[0043] The first electrode 133 is made of a metal, is provided around the first DBR layer 131 on the first substrate 110, and is electrically connected to the fourth semiconductor layer 114. Note that the first electrode 133 may be provided on the first DBR layer 131 when the first DBR layer 131 is a semiconductor DBR.

[0044] The second electrode 134 is made of a metal, is provided on the first semiconductor layer 111, and is electrically connected to the first semiconductor layer 111. Note that the second electrode 134 may be provided on the second DBR layer 132 when the second DBR layer 132 is a semiconductor DBR.

[0045] The dielectric film 135 is made of a dielectric material and is formed on end faces of the first semiconductor layer 111, the second semiconductor layer 112, the third semiconductor layer 113, and the fourth semiconductor layer 114. The metal layer 136 is made of a metal and is provided on the second substrate 120 to cover the second DBR layer 132.

[0046] The VCSEL element 100 has the above-described configuration. The materials of each layer are not limited to those described above, and any materials may be used as long as the VCSEL element 100 can operate. For example, the first semiconductor type (n-type) and the second semiconductor type (p-type) in each of the above layers may be reversed. The shape and thickness of each layer can also be adjusted as appropriate.

[0047] [Material for the first substrate] The first substrate 110 is not limited to being formed from a base material made of InP, and may be formed from other materials. For example, the first substrate 110 may be formed from a base material made of a III-V group element, specifically GaAs, with each layer formed by doping and crystal growth.

[0048] In this case, the semiconductor material having the first semiconductor type may be, for example, n-AlGaA, and the semiconductor material having the second semiconductor type may be, for example, p-AlGaA. Also, the active layer 115 may be, for example, a stack of a quantum well layer made of InGaAs or GaInNAs and a barrier layer made of GaAs. When the first substrate 110 is made of GaAs, the second substrate 120 may be made of a material having a higher thermal conductivity than GaAs, for example, Si, SiC, AlN, or GaN.

[0049] Alternatively, the first substrate 110 may be formed by forming each layer on a base material made of GaN. Similarly, in each of the following embodiments, the material of the first substrate 110 may be a GaAs-based material, a GaN-based material, or the like, in addition to an InP material.

[0050] [VCSEL element operation] When a voltage is applied between the first electrode 133 and the second electrode 134, a current flows between the first electrode 133 and the second electrode 134. The current is subjected to a constriction effect by the tunnel junctions in the first tunnel junction layer 116 and the second tunnel junction layer 117, and is injected into a region of the active layer 115 that is close to the first tunnel junction layer 116. This causes spontaneous emission of light in that region. The spontaneous emission light travels in the stacking direction (Z direction) of the VCSEL device 100, and is reflected by the first DBR layer 131 and the second DBR layer 132.

[0051] The first DBR layer 131 and the second DBR layer 132 are configured to reflect light having an oscillation wavelength λ. The component of the spontaneous emission light having the oscillation wavelength λ forms a standing wave between the first DBR layer 131 and the second DBR layer 132 and is amplified by the active layer 115.

[0052] When the injection current exceeds a threshold value, the light forming the standing wave oscillates as a laser, and laser light is emitted after passing through each layer between the second semiconductor layer 112 and the first DBR layer 131. In FIG.

[0053] Here, in the VCSEL element 100, the second substrate 120 is provided in the vicinity of the active layer 115 between the first DBR layer 131 and the second DBR layer 132, and heat generated in the active layer 115 is transferred to the second substrate 120 and dissipated via the second substrate 120. Therefore, it is possible to realize a VCSEL element 100 that has a small thermal resistance and is capable of operating at high temperatures.

[0054] In particular, when the second substrate 120 has a higher thermal conductivity than the material of the first substrate 110, the heat dissipation is increased, and the thermal resistance can be reduced. In addition, since the material of the second substrate 120 can be selected to have a high thermal conductivity regardless of the material of the first substrate 110, there is a high degree of freedom in the settings and manufacturing process. Furthermore, since the second substrate 120 can be manufactured with a large diameter size, the manufacturing cost can be reduced.

[0055] [Manufacturing method of VCSEL element] The following describes a method for manufacturing the VCSEL element 100. Figures 3 to 7 are schematic diagrams showing a method for manufacturing the VCSEL element 100.

[0056] 3, the first substrate 110 is produced. The first substrate 110 can be produced by forming an etch stop layer 152, a first semiconductor layer 111, an active layer 115, a second semiconductor layer 112, a third semiconductor layer 113, a first tunnel junction layer 116, a second tunnel junction layer 117, and a fourth semiconductor layer 114 on a base material 151 by epitaxial crystal growth.

[0057] The first tunnel junction layer 116 and the second tunnel junction layer 117 can be formed by a lithography process. The substrate 151 can be made of InP or GaAs. The etch stop layer 152 can be made of InGaAs or InGaAsP.

[0058] 4, the first substrate 110 is temporarily attached to a support substrate 154 by an adhesive layer 153, and the base material 151 is removed. The adhesive layer 153 is made of wax, and the support substrate 154 can be made of InP or glass.

[0059] 5, the second substrate 120 is bonded to the surface of the first substrate 110 on the side of the first semiconductor layer 111. In the figure, the bonding interface between the first substrate 110 and the second substrate 120 is shown as a bonding interface S. This bonding can be performed by any bonding method such as surface activation bonding, dehydration condensation bonding, or thermal diffusion bonding. Note that by subjecting the bonding interface S to chemical mechanical polishing, the bonding strength can be further improved.

[0060] 6, the adhesive layer 153 and the support substrate 154 are removed. The support substrate 154 can be removed by heating and melting the adhesive layer 153 in an oven or the like, and removing it with an organic solvent. Then, as shown in FIG. 7, after a mesa (plateau-like structure) is formed in the first substrate 110, the first DBR layer 131, the first electrode 133, the second electrode 134, and the dielectric film 135 are formed on the first substrate 110.

[0061] 1, the second substrate 120 is thinned to form the second DBR layer 132 and the metal layer 126. The second substrate 120 may be thinned using a back grinder, or may be an SOI (Silicon on Insulator) substrate, and the base material and oxide film may be removed. The VCSEL element 100 can be fabricated as described above. In the above manufacturing method, the second substrate 120 is bonded after etching the base material 151, but the second substrate 120 may be bonded to the surface of the base material 151 without removing the base material 151.

[0062] [Variations] Modifications of the VCSEL element 100 will now be described. Fig. 8 is a cross-sectional view of the VCSEL element 100 according to a first modification. As shown in the figure, the second substrate 120 is made thicker, and a lens-shaped convex portion 120a is provided on the surface opposite to the first substrate 210. The shape of the convex portion 120a may be a spherical lens shape, a cylindrical lens shape, or any other lens shape.

[0063] As a result, each layer of second DBR layer 132 formed on convex portion 120a is curved concavely to follow the shape of convex portion 120a, and metal layer 136 formed on second DBR layer 132 is also curved concavely to follow the shape of second DBR layer 132. Therefore, a lens structure is formed by second DBR layer 232 and metal layer 236.

[0064] In this configuration, the first substrate 120 is thickened, which improves heat dissipation. In addition, a lens structure is formed in the second DBR layer 132 and the metal layer 136, and the light emitted from the active layer 215 is focused in a confinement region of the active layer 115 by the tunnel junction by this lens structure, thereby obtaining a light confinement effect. This improves the light emission efficiency.

[0065] 9 is a cross-sectional view of a VCSEL device 100 according to a second modification. As shown in the figure, the metal layer 136 may not be provided on the second substrate 120, and only the second DBR layer 132 may be provided. If the second DBR layer 132 is a semiconductor DBR, a second electrode 134 may be provided on the second DBR layer 132, as shown in FIG.

[0066] 10 is a cross-sectional view of a VCSEL device 100 according to a third modification. As shown in the figure, the first electrode 133 is formed so as to cover the first DBR layer 131, and the metal layer 136 is formed so as not to cover the second DBR layer 132. In this configuration, by adjusting the materials and the number of layers of the first DBR layer 131 and the second DBR layer 132, it is possible to emit laser light from the second DBR layer 132 side. In FIG. 10, a light emission surface H from which the laser light is emitted is shown.

[0067] Second Embodiment A VCSEL device according to a second embodiment of the present technology will be described.

[0068] [VCSEL element structure] 11 is a cross-sectional view of a VCSEL device 200 according to this embodiment. As shown in the figure, the VCSEL device 200 includes a first substrate 210, a second substrate 220, a first DBR layer 231, a second DBR layer 232, a first electrode 233, a second electrode 234, a dielectric film 235, and a metal layer 236.

[0069] 11, the first substrate 210 includes a first semiconductor layer 211, a second semiconductor layer 212, a third semiconductor layer 213, a narrowing layer 214, and an active layer 215. The first semiconductor layer 211 is formed on the second substrate 220, and the active layer 215 is formed on the first semiconductor layer 211.

[0070] The second semiconductor layer 212 is formed on the active layer 215, and the narrowing layer 214 is formed on the second semiconductor layer 212. The third semiconductor layer 213 is formed on the narrowing layer 214. The first semiconductor layer 211 and the second semiconductor layer 212 are made of a material having a first semiconductor type, for example, n-InP. The third semiconductor layer 213 is made of a material having a second semiconductor type, for example, p-InP.

[0071] The narrowing layer 214 provides a narrowing effect to a current. The narrowing layer 214 has an implanted region 214a and a narrowing region 214b. The implanted region 214a is provided in the central portion of the narrowing layer 214, and is a region having high conductivity. The implanted region 214a is made of, for example, InAlAs.

[0072] The narrowing region 214b is provided around the implantation region 214a and has a lower conductivity than the implantation region 214a. The narrowing region 214b may be made of a material obtained by oxidizing the material of the implantation region 214a. This causes the current flowing through the narrowing layer 214 to be concentrated in the implantation region 214a, i.e., the narrowing layer 214 forms a current narrowing structure.

[0073] The active layer 215 emits and amplifies spontaneous emission light. The active layer 215 has a multiple quantum well structure in which quantum well layers and barrier layers are alternately stacked, and the quantum well layers may be made of, for example, InGaAsP, AlGaInAs, InGaAs, or InAs, and the barrier layers may be made of, for example, GaAs, InGaAs, InGaAsP, or AlGaInAs. The active layer 215 is not limited to a quantum well structure, and may have a quantum dot structure made of InAs or the like.

[0074] The second substrate 220, the first DBR layer 231, the second DBR layer 232, the first electrode 233, the second electrode 234, the dielectric film 235, and the metal layer 236 have the same configurations as the second substrate 120, the first DBR layer 131, the second DBR layer 132, the first electrode 133, the second electrode 134, the dielectric film 135, and the metal layer 136 according to the first embodiment, respectively. That is, the second substrate 220 transmits light of wavelength λ, is made of a material different from that of the first substrate 210, and is bonded to the first substrate 210 at a bonding interface S.

[0075] The VCSEL element 200 has the above-described configuration. The materials of each layer are not limited to those described above, and any materials may be used as long as the VCSEL element 200 can operate. For example, the first semiconductor type (n-type) and the second semiconductor type (p-type) in each of the above layers may be reversed. The shape and thickness of each layer can also be adjusted as appropriate.

[0076] Also in the VCSEL element 200, as in the first embodiment, a lens structure (see FIG. 8) may be formed on the second substrate 220, and a second DBR layer 232 may be provided instead of the metal layer 236 (see FIG. 9). Furthermore, it is also possible to adopt a configuration in which laser light is emitted from the second DBR layer 232 side (see FIG. 10).

[0077] [VCSEL element operation] The VCSEL element 200 operates in the same manner as the VCSEL element 100 according to the first embodiment, except that the current is confined by the confinement layer 214, and heat is dissipated by the second substrate 220. Therefore, it is possible to realize the VCSEL element 200 that has a small thermal resistance and is capable of operating at high temperatures.

[0078] [Manufacturing method of VCSEL element] As in the first embodiment, the VCSEL element 200 can be manufactured by bonding the first substrate 210 and the second substrate 220. The constriction region 214b can be formed by forming a mesa in the first substrate 210 and then performing an oxidation treatment on the constituent material of the constriction layer 214.

[0079] (Third embodiment) A VCSEL device according to a third embodiment of the present technology will be described.

[0080] [VCSEL element structure] 12 is a cross-sectional view of a VCSEL device 300 according to this embodiment. As shown in the figure, the VCSEL device 300 includes a first substrate 310, a second substrate 320, a first DBR layer 331, a second DBR layer 332, a first electrode 333, a second electrode 334, a dielectric film 335, and a metal layer 336.

[0081] 12, the first substrate 310 includes a first semiconductor layer 311, a second semiconductor layer 312, and an active layer 313. The first semiconductor layer 311 is formed on a second substrate 320, and the active layer 313 is formed on the first semiconductor layer 311. The second semiconductor layer 312 is formed on the active layer 313. The first semiconductor layer 311 is made of a material having a first semiconductor type, for example, n-InP. The second semiconductor layer 312 is made of a material having a second semiconductor type, for example, p-InP.

[0082] The active layer 313 emits and amplifies spontaneous emission light. The active layer 313 has a multiple quantum well structure in which quantum well layers and barrier layers are alternately stacked, and the quantum well layers may be made of, for example, InGaAsP, AlGaInAs, InGaAs, or InAs, and the barrier layers may be made of, for example, GaAs, InGaAs, InGaAsP, or AlGaInAs. The active layer 313 is not limited to a quantum well structure, and may have a quantum dot structure made of InAs or the like.

[0083] The first semiconductor layer 311, the second semiconductor layer 312, and the active layer 313 are subjected to a high resistance treatment except for the central portion. In Fig. 11, the region subjected to the high resistance treatment is shown as a high resistance region R. The high resistance treatment is, for example, boron ion implantation. As a result, the current flowing through the first semiconductor layer 311, the second semiconductor layer 312, and the active layer 313 becomes less likely to flow through the high resistance region R, and a current confinement structure is formed.

[0084] The second substrate 320, the first DBR layer 331, the second DBR layer 332, the first electrode 333, the second electrode 334, the dielectric film 335, and the metal layer 336 have the same configurations as the second substrate 120, the first DBR layer 131, the second DBR layer 132, the first electrode 133, the second electrode 134, the dielectric film 135, and the metal layer 136 according to the first embodiment, respectively. That is, the second substrate 320 transmits light of wavelength λ, is made of a material different from that of the first substrate 310, and is bonded to the first substrate 310 at a bonding interface S.

[0085] The VCSEL element 300 has the above-described configuration. The materials of each layer are not limited to those described above, and any materials may be used as long as the VCSEL element 300 can operate. For example, the first semiconductor type (n-type) and the second semiconductor type (p-type) in each of the above layers may be reversed. The shape and thickness of each layer can also be adjusted as appropriate.

[0086] Also in the VCSEL device 300, as in the first embodiment, a lens structure (see FIG. 8) may be formed on the second substrate 320, and a second DBR layer 332 may be provided instead of the metal layer 336 (see FIG. 9). Furthermore, it is also possible to configure the device so that laser light is emitted from the second DBR layer 332 side (see FIG. 10).

[0087] [VCSEL element operation] The VCSEL element 300 operates in the same manner as the VCSEL element 100 according to the first embodiment, except that the current is confined by the high-resistance region R, and heat is dissipated by the second substrate 320. Therefore, it is possible to realize a VCSEL element 300 that has low thermal resistance and is capable of operating at high temperatures.

[0088] [Manufacturing method of VCSEL element] As in the first embodiment, the VCSEL element 300 can be manufactured by bonding a first substrate 310 and a second substrate 320. The high-resistance region R can be formed by forming a mesa in the first substrate 310, and then performing ion implantation after masking the center of the mesa.

[0089] (Fourth embodiment) A VCSEL device according to a fourth embodiment of the present technology will be described.

[0090] [VCSEL element structure] 13 is a cross-sectional view of a VCSEL device 400 according to this embodiment. As shown in the figure, the VCSEL device 400 includes a first substrate 410, a second substrate 420, a third substrate 430, a first DBR layer 431, a second DBR layer 432, a first electrode 433, a second electrode 434, a dielectric film 435, and a metal layer 436.

[0091] The first substrate 410, the second substrate 420, the second DBR layer 432, the second electrode 434, the dielectric film 435 and the metal layer 436 have the same configurations as the first substrate 110, the second substrate 120, the second DBR layer 132, the second electrode 134, the dielectric film 135 and the metal layer 136 of the first embodiment, respectively.

[0092] That is, the first substrate 410 includes a first semiconductor layer 411, a second semiconductor layer 412, a third semiconductor layer 413, a fourth semiconductor layer 414, an active layer 415, a first tunnel junction layer 416, and a second tunnel junction layer 417, and each has the same configuration as the first semiconductor layer 111, the second semiconductor layer 112, the third semiconductor layer 113, the fourth semiconductor layer 114, the active layer 115, the first tunnel junction layer 116, and the second tunnel junction layer 117, respectively.

[0093] Second substrate 420 transmits light of wavelength λ, is made of a material different from that of first substrate 410, and is bonded to first substrate 410. In Fig. 13, the bonding interface between first substrate 410 and second substrate 420 is shown as bonding interface S1.

[0094] The third substrate 430 is made of a material different from that of the first substrate 410, and is bonded to the side of the first substrate 410 opposite to the bonding interface S1. In Fig. 13, the bonding interface between the first substrate 410 and the third substrate 430 is shown as bonding interface S2. The material and thickness of the third substrate 430 are configured to transmit light having the emission wavelength λ of the VCSEL element 400.

[0095] The third substrate 430 is preferably made of a material having a higher thermal conductivity than the material of the first substrate 410, and may be made of, for example, Si, SiC, AlN, GaN, etc. The material of the third substrate 430 may be the same as or different from the material of the second substrate 420.

[0096] First DBR layer 431 is provided on the third substrate 430 on the opposite side to first substrate 410, and functions as a DBR that reflects light of wavelength λ. First DBR layer 431 can be formed by alternately laminating a plurality of low refractive index layers and high refractive index layers.

[0097] The first DBR layer 431 is a dielectric DBR, and the low refractive index layer may be made of, for example, SiO2, and the high refractive index layer may be made of, for example, Ta2O5. The first DBR layer 431 may also be a semiconductor DBR, and the low refractive index layer may be made of, for example, AlGaAs, and the high refractive index layer may be made of, for example, GaAs. The thicknesses of the low refractive index layer and the high refractive index layer are preferably each λ / 4.

[0098] The first electrode 433 is made of a metal, is provided around the first DBR layer 431 on the third substrate 430, and is electrically connected to the third substrate 430. Note that the first electrode 433 may be provided on the first DBR layer 431 when the first DBR layer 431 is a semiconductor DBR.

[0099] The VCSEL element 400 has the above-described configuration. The materials of each layer are not limited to those described above, and any materials may be used as long as the VCSEL element 400 can operate. For example, the first semiconductor type (n-type) and the second semiconductor type (p-type) in each of the above layers may be reversed. The shape and thickness of each layer can also be adjusted as appropriate.

[0100] [VCSEL element operation] The VCSEL element 400 operates in the same manner as the VCSEL element 400 according to the first embodiment. Here, in the VCSEL element 400, a second substrate 420 and a third substrate 430 are provided between a first DBR layer 431 and a second DBR layer 432. As a result, heat generated in the active layer 415 is dissipated not only from the second substrate 420 but also from the third substrate 430, so that the VCSEL element 400 has higher heat dissipation properties and is suitable for high temperature operation.

[0101] [Manufacturing method of VCSEL element] The VCSEL device 400 can be manufactured by bonding a second substrate 420 and a third substrate 430 to a first substrate 410. The third substrate 430 can be bonded to the first substrate 410 in a similar manner to the second substrate 420.

[0102] [Variations] Modifications of the VCSEL element 400 will now be described. Fig. 14 is a cross-sectional view of the VCSEL element 400 according to a first modification. As shown in the figure, a lens-shaped convex portion 420a is provided on the surface of the second substrate 420 opposite to the first substrate 410. The shape of the convex portion 420a may be a spherical lens shape, a cylindrical lens shape, or any other lens shape.

[0103] As a result, each layer of second DBR layer 432 formed on convex portion 420a is curved concavely along the shape of convex portion 420a, and metal layer 436 formed on second DBR layer 432 is also curved concavely along the shape of second DBR layer 432. Therefore, second DBR layer 432 and metal layer 436 form a lens structure.

[0104] In this configuration, a lens structure is formed by the second DBR layer 432 and the metal layer 436, and the light emitted from the active layer 415 is focused by this lens structure in a confinement region of the active layer 415 formed by a tunnel junction, thereby obtaining a light confinement effect. This improves the light emission efficiency.

[0105] 15 is a cross-sectional view of a VCSEL device 400 according to a second modification. As shown in the figure, in addition to the convex portion 420a provided on the second substrate 420, a lens-shaped convex portion 430a is provided on the surface of the third substrate 430 opposite to the first substrate 410. The shape of the convex portion 430a may be a spherical lens shape, a cylindrical lens shape, or any other lens shape.

[0106] As a result, each layer of the first DBR layer 431 formed on the convex portion 430a is curved concavely along the shape of the convex portion 430a, forming a lens structure. In this configuration, since the lens structures are formed in both the second substrate 420 and the third substrate 430, the light emitted from the active layer 415 is focused by both lens structures in the constriction region of the active layer 415 formed by the tunnel junction, thereby obtaining a light constriction effect. This further improves the light emission efficiency.

[0107] In the VCSEL element 400, the lens structure may not be provided on the second substrate 420, and may be provided only on the third substrate 430. The VCSEL element 400 may be configured to emit laser light toward the second substrate 420. Furthermore, in this embodiment, the VCSEL element 400 has a current confinement structure using a tunnel junction, but it may have a current confinement structure using oxidation according to the second embodiment or a current confinement structure using high resistance according to the third embodiment.

[0108] Fifth embodiment A VCSEL element array according to a fifth embodiment of the present technology will be described.

[0109] Fig. 16 is a cross-sectional view of a VCSEL element array 500 according to this embodiment. As shown in the figure, the VCSEL element array 500 is an array in which a plurality of VCSEL elements 100 are arranged. In Fig. 16, the VCSEL element array 500 includes three VCSEL elements 100, but the number of VCSEL elements 100 may be more than one and is not limited to three.

[0110] Each VCSEL element 100 has the configuration described in the first embodiment, and each layer except for the first tunnel junction layer 116, the second tunnel junction layer 117, the first DBR layer 131, and the second DBR layer 132 is a continuous layer between the multiple VCSEL elements 100.

[0111] The VCSEL element array 500 can be formed by forming structures corresponding to each VCSEL element 100 on the first substrate 110 and the second substrate 120, and then bonding the first substrate 110 and the second substrate 120 together.

[0112] Even in this structure, since the second substrate 120 is provided between the first DBR layer 131 and the second DBR layer 132 in each VCSEL element 100, each VCSEL element 100 can have high heat dissipation properties.

[0113] [Variations] A modified example of the VCSEL element array 500 will now be described. Fig. 17 is a cross-sectional view of the modified VCSEL element array 500. As shown in the figure, in each VCSEL element 100, a lens-shaped convex portion 120a is provided on the surface of the second substrate 120 opposite to the first substrate 110, and a lens structure may be formed by the second DBR layer 132 and the metal layer 136.

[0114] Furthermore, in this embodiment, each VCSEL element 100 has a current confinement structure based on a tunnel junction, but it may have a current confinement structure based on oxidation according to the second embodiment or a current confinement structure based on high resistance according to the third embodiment. Furthermore, the VCSEL element array 500 may include a third substrate in addition to the second substrate 120, as in the fourth embodiment.

[0115] Sixth embodiment A VCSEL module according to a sixth embodiment of the present technology will be described.

[0116] 18 is a cross-sectional view of a VCSEL module 600 according to this embodiment. As shown in the figure, the VCSEL module 600 includes a plurality of VCSEL elements 100, and is configured by bonding a first substrate 110 and a second substrate 120. The VCSEL elements 100 have the same configuration as in the first embodiment, but the second substrate 120 is a circuit substrate and includes a heat dissipation section 120b and a circuit section 120c. The VCSEL module 600 may also include a single VCSEL element 100.

[0117] The heat dissipation portion 120b is provided between the first substrate 110 and the second DBR layer 132 in each VCSEL element 100. The heat dissipation portion 120b is made of a material different from that of the first substrate 110, and is configured to transmit light having the emission wavelength λ of the VCSEL element 100, and is made of, for example, Si, SiC, AlN, or GaN.

[0118] The circuit section 120c constitutes an IC (integrated circuit) in which, for example, wiring layers and insulating layers are laminated. A photodiode 601 is provided on the second substrate 120, and the VCSEL module 600 constitutes a TOF (Time Of Flight) module in which the VCSEL element 100 is a light emitting element and the photodiode 601 is a light receiving element.

[0119] The VCSEL module 600 can be produced by bonding a first substrate 110 and a second substrate 120. The VCSEL element 100 has a high affinity with silicon photonics, and can be easily applied to TOF modules and packages.

[0120] As shown in FIG. 18, when a VCSEL module 600 includes a plurality of VCSEL elements 100, each VCSEL element 100 can be driven independently by mounting the VCSEL elements 100 on a second substrate 120, which is a circuit board.

[0121] [Variations] A modified example of the VCSEL module 600 will be described. Fig. 19 is a cross-sectional view of the modified VCSEL module 600. As shown in the figure, in each VCSEL element 100, a convex portion 120a having a lens shape is provided on the surface of the second substrate 120 opposite to the first substrate 110, and the lens structure may be formed by the second DBR layer 132 and the metal layer 136.

[0122] Furthermore, in this embodiment, each VCSEL element 100 has a current confinement structure based on a tunnel junction, but it may have a current confinement structure based on oxidation according to the second embodiment or a current confinement structure based on high resistance according to the third embodiment. Furthermore, the VCSEL module 600 may include a third substrate in addition to the second substrate 120, as in the fourth embodiment.

[0123] The present technology can also be configured as follows.

[0124] (1) a first substrate made of a first material and having an active layer; a second substrate that transmits light having a specific wavelength, is made of a second material different from the first substrate, and is bonded to the first substrate; a first DBR (Distributed Bragg Reflector) layer provided on the first substrate opposite to the second substrate and reflecting light of the wavelength; a second DBR layer provided on the second substrate opposite to the first substrate and reflecting light of the wavelength; A vertical cavity surface emitting laser device comprising: (2) The vertical cavity surface emitting laser element according to (1) above, The second material has a higher thermal conductivity than the first material. Vertical-cavity surface-emitting laser element. (3) The vertical cavity surface emitting laser element according to (1) or (2), the first material is InP; The second material is Si, SiC, AlN or GaN. Vertical-cavity surface-emitting laser element. (4) The vertical cavity surface emitting laser element according to (3) above, The first substrate has the active layer formed by crystal growth on a base material made of InP. Vertical-cavity surface-emitting laser element. (5) The vertical cavity surface emitting laser element according to (1) or (2), the first material is GaAs; The second material is Si, SiC, AlN or GaN. Vertical-cavity surface-emitting laser element. (6) The vertical cavity surface emitting laser element according to (5) above, The first substrate has the active layer formed by crystal growth on a base material made of GaAs. Vertical-cavity surface-emitting laser element. (7) The vertical cavity surface emitting laser element according to any one of (1) to (6), It has a current confinement structure using a tunnel junction. Vertical-cavity surface-emitting laser element. (8) The vertical cavity surface emitting laser element according to (7) above, The light confinement structure is formed by the tunnel junction. Vertical-cavity surface-emitting laser element. (9) The vertical cavity surface emitting laser element according to any one of (1) to (6), It has a current confinement structure created by oxidation treatment. Vertical-cavity surface-emitting laser element. (10) The vertical cavity surface emitting laser element according to any one of (1) to (6), It has a current confinement structure created by ion implantation. Vertical-cavity surface-emitting laser element. (11) The vertical cavity surface emitting laser element according to any one of (1) to (10), a lens structure formed by a convex portion provided on the second substrate and the second DBR layer provided on the convex portion, and configured to focus incident light onto a region of the active layer between the first DBR layer and the second DBR layer; A vertical cavity surface emitting laser element having a (12) The vertical cavity surface emitting laser element according to any one of (1) to (11), a third substrate that transmits light having the wavelength and is made of a third material different from the first substrate and is bonded to the first substrate on an opposite side to the second substrate; The first DBR layer is provided on the third substrate on the opposite side to the first substrate. A vertical cavity surface emitting laser device comprising: (13) The vertical cavity surface emitting laser element according to any one of (1) to (12), 2. The vertical cavity surface emitting laser element according to claim 1, the first DBR layer is a semiconductor DBR or a dielectric DBR; The second DBR layer is a semiconductor DBR or a dielectric DBR. Vertical-cavity surface-emitting laser element. (14) The vertical cavity surface emitting laser element according to any one of (1) to (13), 2. The vertical cavity surface emitting laser element according to claim 1, A laser beam is emitted from the second DBR layer side. Vertical-cavity surface-emitting laser element. (15) The vertical cavity surface emitting laser element according to any one of (1) to (13), 2. The vertical cavity surface emitting laser element according to claim 1, A laser beam is emitted from the first DBR layer side. Vertical-cavity surface-emitting laser element. (16) A plurality of vertical cavity surface emitting laser elements are arranged, the vertical cavity surface emitting laser elements including: a first substrate made of a first material and provided with an active layer; a second substrate made of a second material different from the first substrate, which transmits light having a specific wavelength and is bonded to the first substrate; a first DBR (Distributed Bragg Reflector) layer provided on the first substrate opposite to the second substrate and reflecting light of the wavelength; and a second DBR layer provided on the second substrate opposite to the first substrate and reflecting light of the wavelength. Vertical-cavity surface-emitting laser array. (17) a first substrate made of a first material and having an active layer; a second substrate made of a second material different from the first substrate, which transmits light having a specific wavelength and is bonded to the first substrate; a first DBR (Distributed Bragg Reflector) layer provided on the first substrate opposite to the second substrate and reflecting light of the wavelength; and a second DBR layer provided on the second substrate opposite to the first substrate and reflecting light of the wavelength. Equipped with The second substrate is a circuit substrate. Vertical-cavity surface-emitting laser module. (18) forming a first substrate made of a first material and having an active layer thereon; forming a second substrate that transmits light having a specific wavelength and is made of a second material different from the first substrate; The first substrate and the second substrate are bonded to each other to form a structure in which the first substrate and the second substrate are positioned between a first DBR (Distributed Bragg Reflector) layer that reflects light of the wavelength and a second DBR layer that reflects light of the wavelength. A method for manufacturing a vertical cavity surface emitting laser element array. [Explanation of symbols]

[0125] 100, 200, 300, 400...VCSEL elements 110, 210, 310, 410...First board 120, 220, 320, 420...Second board 430…Third board 131, 231, 331, 431...1st DBR layer 132, 232, 332, 432...2nd DBR layer 115, 215, 315, 415...active layer 500...VCSEL element array 600...VCSEL module

Claims

1. a first substrate made of a first material and having an active layer provided thereon; a second substrate that transmits light having a specific wavelength, is made of a second material different from the first substrate, and is bonded to the first substrate; a first Distributed Bragg Reflector (DBR) layer that is provided on the first substrate on the opposite side to the second substrate and that reflects light of the wavelength; a second DBR layer provided on the second substrate opposite to the first substrate and reflecting light of the wavelength; a third substrate that transmits light having the wavelength, is made of a third material different from the first substrate, and is bonded to the first substrate on the side opposite to the second substrate; Equipped with The first DBR layer is provided on the third substrate on the opposite side to the first substrate. Vertical-cavity surface-emitting laser element.

2. 2. The vertical cavity surface emitting laser element according to claim 1, The second material has a higher thermal conductivity than the first material. Vertical-cavity surface-emitting laser element.

3. 2. The vertical cavity surface emitting laser element according to claim 1, the first material is InP; The second material is Si, SiC, AlN or GaN. Vertical-cavity surface-emitting laser element.

4. 2. The vertical cavity surface emitting laser element according to claim 1, the first material is GaAs; The second material is Si, SiC, AlN or GaN. Vertical-cavity surface-emitting laser element.

5. 2. The vertical cavity surface emitting laser element according to claim 1, It has a current confinement structure using a tunnel junction. Vertical-cavity surface-emitting laser element.

6. 6. The vertical cavity surface emitting laser element according to claim 5, The tunnel junction has a light confinement structure. Vertical-cavity surface-emitting laser element.

7. 2. The vertical cavity surface emitting laser element according to claim 1, a lens structure formed by a convex portion provided on the second substrate and the second DBR layer provided on the convex portion, the lens structure focusing incident light onto a region of the active layer between the first DBR layer and the second DBR layer; A vertical cavity surface emitting laser element having a

8. 2. The vertical cavity surface emitting laser element according to claim 1, the first DBR layer is a semiconductor DBR or a dielectric DBR; The second DBR layer is a semiconductor DBR or a dielectric DBR. Vertical-cavity surface-emitting laser element.

9. 2. The vertical cavity surface emitting laser element according to claim 1, A laser beam is emitted from the second DBR layer side. Vertical-cavity surface-emitting laser element.

10. 2. The vertical cavity surface emitting laser element according to claim 1, A laser beam is emitted from the first DBR layer side. Vertical-cavity surface-emitting laser element.

11. The laser diode includes a first substrate made of a first material and having an active layer provided thereon, a second substrate made of a second material different from the first substrate, which transmits light having a specific wavelength, and which is bonded to the first substrate, a first distributed Bragg reflector (DBR) layer provided on the first substrate opposite to the second substrate and reflects light having the wavelength, a second DBR layer provided on the second substrate opposite to the first substrate and reflects light having the wavelength, and a third substrate made of a third material different from the first substrate and bonded to the first substrate opposite to the second substrate, the first DBR layer being provided on the third substrate opposite to the first substrate, and a vertical cavity surface emitting laser element having a plurality of vertical cavity surface emitting laser elements arranged on the third substrate opposite to the first substrate. Vertical-cavity surface-emitting laser array.

12. a first substrate made of a first material and having an active layer provided thereon; a second substrate made of a second material different from the first substrate, transmitting light having a specific wavelength, and bonded to the first substrate; a first Distributed Bragg Reflector (DBR) layer provided on the first substrate opposite to the second substrate and reflecting light of the specific wavelength; a second DBR layer provided on the second substrate opposite to the first substrate and reflecting light of the specific wavelength; and a third substrate made of a third material different from the first substrate, transmitting light having the specific wavelength, and bonded to the first substrate opposite to the second substrate, wherein the first DBR layer is provided on the third substrate opposite to the first substrate. Equipped with The second substrate is a circuit board. Vertical-cavity surface-emitting laser module.

13. forming a first substrate made of a first material and having an active layer thereon; forming a second substrate that transmits light having a specific wavelength and is made of a second material different from the first substrate; forming a third substrate that transmits light having the wavelength and is made of a third material different from the first substrate; The first substrate, the second substrate, and the third substrate are bonded together to form a structure in which the first substrate, the second substrate, and the third substrate are positioned between a first DBR (Distributed Bragg Reflector) layer that reflects light of the wavelength and a second DBR layer that reflects light of the wavelength, the second substrate is bonded to the first substrate, and the third substrate is bonded to the side of the first substrate opposite to the second substrate. A method for manufacturing a vertical cavity surface emitting laser element array.

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