Light emitting element

Abstract

This light emitting element (10A) is provided with: a layered structure (20) in which a first compound semiconductor layer (21) having a first surface (21a) and a second surface (21b), an active layer (23), and a second compound semiconductor layer (22) having a first surface (22a) and a second surface (22b) are layered; a first light-reflecting layer (41) that is formed on the first surface (21a) side of the first compound semiconductor layer (21) and has a shape that protrudes in the direction away from the active layer (23); and a second light-reflecting layer (42) that is formed on the second surface (22b) side of the second compound semiconductor layer (22) and has a flat shape. A partition wall (24) that extends in the layering direction of the layered structure is formed so as to surround the first light-reflecting layer (41).

Description

[Technical field]

[0001] The present disclosure relates to light emitting devices, and more particularly to light emitting devices comprising vertical cavity surface emitting laser devices (VCSELs). [Background technology]

[0002] In a light-emitting element made of a surface-emitting laser element, laser oscillation generally occurs by resonating laser light between two light-reflecting layers (Distributed Bragg Reflector layer, DBR layer). In a surface-emitting laser element having a laminated structure in which an n-type compound semiconductor layer (first compound semiconductor layer), an active layer (light-emitting layer) made of compound semiconductors, and a p-type compound semiconductor layer (second compound semiconductor layer) are laminated, a second electrode made of a transparent conductive material is generally formed on the p-type compound semiconductor layer, and a second light-reflecting layer is formed on the second electrode. In addition, a first light-reflecting layer and a first electrode are formed on the n-type compound semiconductor layer (on the exposed surface of the substrate when the n-type compound semiconductor layer is formed on a conductive substrate). In this specification, the concept of "upper" may refer to a direction away from the active layer with respect to the active layer, the concept of "lower" may refer to a direction approaching the active layer with respect to the active layer, and the concepts of "convex" and "concave" may refer to the active layer with respect to the active layer.

[0003] A structure in which the first light reflecting layer also functions as a concave mirror is known from, for example, WO2018 / 083877A1. Here, in the technology disclosed in this international publication, for example, a convex portion is formed in an n-type compound semiconductor layer with respect to the active layer, and the first light reflecting layer is formed on the convex portion. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] WO2018 / 083877A1 Summary of the Invention [Problem to be solved by the invention]

[0005] In a VCSEL in which the first light reflecting layer functions as a kind of concave mirror, there is a problem that stray light is highly likely to enter an adjacent VCSEL through the side (end) of the concave mirror. Such light that reaches an adjacent VCSEL is absorbed by the active layer of the adjacent VCSEL, or is coupled to the resonant mode, affecting the light emitting operation of the adjacent VCSEL and causing noise. This phenomenon is sometimes called optical crosstalk caused by the concave mirror. In addition, when the laminated structure is made of GaN-based compound semiconductors, there is a problem of thermal saturation. Here, "thermal saturation" refers to a phenomenon in which the light output is saturated due to self-heating when the surface emitting laser element is driven. The material used for the light reflecting layer (e.g., materials such as SiO2 and Ta2O5) has a lower thermal conductivity value than GaN-based compound semiconductors. Therefore, increasing the thickness of the GaN-based compound semiconductor layer leads to suppressing thermal saturation. However, increasing the thickness of the GaN-based compound semiconductor layer increases the resonator length L OR Since the length of the wire becomes longer, the above problems are likely to occur.

[0006] Therefore, an object of the present disclosure is to provide a light-emitting element having a configuration or structure capable of preventing the occurrence of optical crosstalk, or a light-emitting element having a configuration or structure capable of preventing the occurrence of thermal saturation. [Means for solving the problem]

[0007] In order to achieve the above object, the light-emitting device of the present disclosure comprises: a first compound semiconductor layer having a first surface and a second surface opposite to the first surface; an active layer facing the second surface of the first compound semiconductor layer; and a second compound semiconductor layer having a first surface facing the active layer and a second surface opposite to the first surface; A laminated structure in which a first light reflecting layer formed on the first surface side of the first compound semiconductor layer and having a convex shape extending in a direction away from the active layer; and a second light reflecting layer formed on the second surface side of the second compound semiconductor layer and having a flat shape; Equipped with A partition wall is formed so as to surround the first light reflecting layer and extend in the stacking direction of the stacked structure. And, The partition wall extends from the second surface side of the second compound semiconductor layer into the second compound semiconductor layer and the active layer, and further extends into the first compound semiconductor layer to a midpoint in the thickness direction of the first compound semiconductor layer. .

[0008] In order to achieve the above object, the light-emitting element array of the present disclosure is a light-emitting element array including a plurality of light-emitting elements arranged in an array, Each light emitting element is a first compound semiconductor layer having a first surface and a second surface opposite to the first surface; an active layer facing the second surface of the first compound semiconductor layer; and a second compound semiconductor layer having a first surface facing the active layer and a second surface opposite to the first surface; A laminated structure in which a first light reflecting layer formed on the first surface side of the first compound semiconductor layer and having a convex shape extending in a direction away from the active layer; and a second light reflecting layer formed on the second surface side of the second compound semiconductor layer and having a flat shape; Equipped with 、 In each light-emitting element, a partition wall is formed so as to surround the first light-reflecting layer and extend in the stacking direction of the stacked structure, The partition wall extends from the second surface side of the second compound semiconductor layer into the second compound semiconductor layer and the active layer, and further extends into the first compound semiconductor layer to a midpoint in the thickness direction of the first compound semiconductor layer. . [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a schematic partial cross-sectional view of a light-emitting element array according to a first embodiment. [Diagram 2] FIG. 2 is a schematic partial cross-sectional view of a light-emitting element constituting the light-emitting element array of Example 1 shown in FIG. [Diagram 3] FIG. 3 is a schematic plan view showing the arrangement of a first light reflecting layer and partition walls in the light emitting element array of Example 1. As shown in FIG. [Figure 4] FIG. 4 is a schematic plan view showing the arrangement of the first light reflecting layer and the first electrode in the light emitting element array of Example 1 shown in FIG. [Diagram 5]FIG. 5 is a schematic plan view showing the arrangement of the first light reflecting layer and the partition walls in the light emitting element array of the first embodiment. [Figure 6] FIG. 6 is a schematic plan view showing the arrangement of the first light reflecting layer and the first electrode in the light emitting element array of Example 1 shown in FIG. [Figure 7] FIG. 7 is a schematic plan view showing the arrangement of the first light reflecting layer and the partition walls in the light emitting element array of Example 1. As shown in FIG. [Figure 8] FIG. 8 is a schematic plan view showing the arrangement of the first light reflecting layer and the first electrode in the light emitting element array of Example 1 shown in FIG. [Figure 9] FIG. 9 is a schematic plan view showing the arrangement of the first light reflecting layer and the partition walls in the light emitting element array of the first embodiment. [Figure 10] FIG. 10 is a schematic plan view showing the arrangement of the first light reflecting layer and the partition walls in the light emitting element array of the first embodiment. [Figure 11] FIG. 11 is a schematic plan view showing the arrangement of the first light reflecting layer and the partition walls in the light emitting element array of the first embodiment. [Figure 12] FIG. 12 is a schematic plan view showing the arrangement of the first light reflecting layer and the partition walls in the light emitting element array of Example 1. As shown in FIG. [Figure 13] FIG. 13 is a schematic partial cross-sectional view of a first modified example of the light-emitting element array of the first embodiment. [Figure 14] FIG. 14 is a schematic partial cross-sectional view of a light-emitting element constituting a first modified example of the light-emitting element array of the first embodiment shown in FIG. [Figure 15] FIG. 15 is a schematic partial cross-sectional view of a modified example 2 of the light-emitting element array of the first embodiment. [Figure 16] FIG. 16 is a schematic partial cross-sectional view of a light-emitting element constituting a modified example 2 of the light-emitting element array of the embodiment 1 shown in FIG. [Figure 17] FIG. 17 is a schematic partial cross-sectional view of the light-emitting element array of the second embodiment. [Figure 18] FIG. 18 is a schematic partial cross-sectional view of a light-emitting element constituting the light-emitting element array of the second embodiment shown in FIG. [Figure 19] FIG. 19 is a schematic partial cross-sectional view of Modification 1 of the light-emitting device of Example 2. As shown in FIG. [Figure 20] FIG. 20 is a schematic partial cross-sectional view of Modification 2 of the light-emitting device of Example 2. As shown in FIG. [Figure 21] FIG. 21 is a schematic partial cross-sectional view of Modification 3 of the light-emitting device of Example 2. As shown in FIG. [Figure 22] FIG. 22 is a schematic partial cross-sectional view of the light-emitting device of Example 3. As shown in FIG. [Figure 23] FIG. 23 is a schematic partial end view of the light-emitting device of Example 5. As shown in FIG. [Figure 24] FIG. 24 is a schematic partial end view of a modified example (modified example-1) of the light emitting device of Example 5. As shown in FIG. [Diagram 25] FIG. 25 is a schematic partial end view of a modified example (modified example-2) of the light-emitting device of Example 5. As shown in FIG. [Figure 26] FIG. 26 is a schematic partial end view of the light-emitting element array of the fifth embodiment. [Figure 27] FIG. 27 is a schematic partial end view of the light-emitting element array of the fifth embodiment. [Figure 28] FIG. 28 is a schematic partial end view of the light-emitting element array of the fifth embodiment. [Figure 29] 29A and 29B are schematic partial end views of a laminated structure and the like for illustrating a manufacturing method of a light-emitting element according to Example 5. FIG. [Diagram 30] FIG. 30 is a schematic partial end view of the laminated structure etc. for illustrating the manufacturing method of the light emitting device of Example 5, following FIG. 29B. [Diagram 31] FIG. 31 is a schematic partial end view of the laminated structure etc. for illustrating the manufacturing method of the light emitting device of Example 5, following FIG. [Diagram 32] 32A and 32B are schematic partial end views of a first compound semiconductor layer and the like for explaining the manufacturing method of the light-emitting element array of Example 5, following FIG. [Diagram 33]33A, 33B, and 33C are schematic partial end views of a first compound semiconductor layer and the like for explaining the manufacturing method of the light-emitting element array of Example 5, following FIG. 32B. [Diagram 34] 34A and 34B are schematic partial end views of a first compound semiconductor layer and the like for explaining the manufacturing method of the light-emitting element array of Example 5, following FIG. 33C. [Diagram 35] FIG. 35 is a schematic partial end view of the light-emitting device of Example 6. As shown in FIG. [Diagram 36] FIG. 36 is a schematic partial end view of the light-emitting element array of the sixth embodiment. [Figure 37] FIG. 37 is a schematic plan view showing the arrangement of the first portion and the second portion of the base surface in the light-emitting element array of Example 6. As shown in FIG. [Figure 38] FIG. 38 is a schematic plan view showing the arrangement of the first light reflecting layer and the first electrodes in the light emitting element array of Example 6. As shown in FIG. [Figure 39] FIG. 39 is a schematic plan view showing the arrangement of the first portion and the second portion of the base surface in the light-emitting element array of Example 6. As shown in FIG. [Diagram 40] FIG. 40 is a schematic plan view showing the arrangement of the first light reflecting layer and the first electrodes in the light emitting element array of Example 6. As shown in FIG. [Diagram 41] 41A and 41B are schematic partial end views of a first compound semiconductor layer and the like for illustrating a manufacturing method of the light-emitting element array of Example 6. FIG. [Diagram 42] 42A and 42B are schematic partial end views of a first compound semiconductor layer and the like for explaining the manufacturing method of the light-emitting element array of Example 6, following FIG. 41B. [Diagram 43] 43A and 43B are schematic partial end views of a first compound semiconductor layer and the like for explaining the manufacturing method of the light-emitting element array of Example 6, following FIG. 42B. [Diagram 44] FIG. 44 is a schematic partial end view of the light-emitting element array of the seventh embodiment. [Diagram 45] FIG. 45 is a schematic partial end view of the light-emitting element array of the seventh embodiment. [Diagram 46] FIG. 46 is a schematic plan view showing the arrangement of the first and second portions of the base surface in the light-emitting element array of the seventh embodiment. [Figure 47] 47A and 47B are schematic plan views showing the arrangement of the first portion and the second portion of the base surface in the light-emitting element array of Example 8. FIG. [Figure 48] FIG. 48 is a schematic partial end view of the light-emitting device of Example 9. As shown in FIG. [Figure 49] FIG. 49 is a schematic partial end view of the light-emitting device of Example 10. As shown in FIG. [Figure 50] FIG. 50 is a schematic partial end view of a modified example of the light-emitting device of Example 10. As shown in FIG. [Figure 51] 51A, 51B, and 51C are schematic partial end views of a laminated structure and the like for illustrating a manufacturing method of the light-emitting device of Example 11. FIG. [Figure 52] 52A, 52B, and 52C are schematic partial end views of a laminated structure and the like for illustrating a manufacturing method of the light-emitting device of Example 13. FIG. [Diagram 53] FIG. 53 is a schematic partial end view of the light-emitting device of Example 15. As shown in FIG. [Figure 54] 54A and 54B are schematic partial end views of a laminated structure and the like for illustrating a manufacturing method of the light-emitting element of Example 15. FIG. [Figure 55] 55A, 55B, and 55C are conceptual diagrams showing the optical field intensity in a conventional light-emitting element, the light-emitting element of Example 15, and the light-emitting element of Example 20, respectively. [Figure 56] FIG. 56 is a schematic partial end view of the light-emitting device of Example 16. As shown in FIG. [Figure 57] FIG. 57 is a schematic partial end view of the light-emitting device of Example 17. As shown in FIG. [Figure 58] 58A and 58B are a schematic partial end view of the light-emitting element of Example 18 and a schematic partial cross-sectional view of a main portion of the light-emitting element of Example 18, respectively. [Figure 59] FIG. 59 is a schematic partial end view of the light-emitting device of Example 19. As shown in FIG. [Figure 60] FIG. 60 is a schematic partial end view of the light-emitting device of Example 20. As shown in FIG. [Figure 61] FIG. 61 is a schematic partial cross-sectional view of the light-emitting device of Example 21. As shown in FIG. [Figure 62] FIG. 62 is a schematic partial cross-sectional view of the light-emitting device of Example 21, and a diagram showing two longitudinal modes, longitudinal mode A and longitudinal mode B, superimposed on each other. [Figure 63] FIG. 63 is a schematic partial cross-sectional view of the light-emitting device of Example 24. [Figure 64] FIG. 64 is a conceptual diagram assuming a Fabry-Perot type resonator sandwiched between two concave mirror portions having the same radius of curvature. [Figure 65] FIG. 65 is a graph showing the relationship between the value of ω0, the value of the cavity length LOR, and the value of the radius of curvature R1 (RDBR) of the concave mirror portion of the first light reflecting layer. [Figure 66] FIG. 66 is a graph showing the relationship between the value of ω0, the value of the cavity length LOR, and the value of the radius of curvature R1 (RDBR) of the concave mirror portion of the first light reflecting layer. [Figure 67] Figures 67A and 67B are schematic diagrams showing the focused state of laser light when the value of ω0 is "positive", and schematic diagrams showing the focused state of laser light when the value of ω0 is "negative", respectively. [Figure 68] 68A and 68B are conceptual diagrams that typically show longitudinal modes that exist in a gain spectrum determined by an active layer. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, the present disclosure will be described based on examples with reference to the drawings, but the present disclosure is not limited to the examples, and various numerical values ​​and materials in the examples are merely examples. The description will be made in the following order. 1. General Description of the Light Emitting Device and the Light Emitting Device Array of the Present Disclosure 2. Example 1 (Light-emitting element and light-emitting element array of the present disclosure) 3. Example 2 (Modification of Example 1) 4. Example 3 (Modification of Examples 1 and 2) 5. Example 4 (Modification of Examples 1 to 3) 6. Example 5 (Light-emitting element according to the second aspect of the present disclosure, light-emitting element array according to the second aspect of the present disclosure, and manufacturing method of the light-emitting element array according to the first aspect of the present disclosure, as well as light-emitting element of first configuration, light-emitting element of 1-A configuration, and light-emitting element of second configuration) 7. Example 6 (Modification of Example 5, Light-emitting element having 1-B configuration) 8. Example 7 (Another modification of Example 5, light-emitting element having 1-C configuration) 9. Example 8 (another variation of Example 5) 10. Example 9 (Modifications of Examples 5 to 8, Light-emitting device of third configuration) 11. Example 10 (Modifications of Examples 5 to 8, Light-emitting device having a fourth configuration) 12. Example 11 (Modification of Example 10) 13. Example 12 (Modification of Examples 5 to 11) 14. Example 13 (Method for manufacturing a light-emitting element array according to the second aspect of the present disclosure) 15. Example 14 (Modification of Examples 5 to 13, Light-emitting device having a fifth configuration) 16. Example 15 (Modification of Examples 5 to 14, Light-emitting device having the 6-A configuration) 17. Example 16 (Modification of Example 15, Light-emitting element having 6-B configuration) 18. Example 17 (Modification of Examples 15 to 16, Light-emitting device having the 6-C configuration) 19. Example 18 (Modification of Examples 15 to 17, Light-emitting device having the 6-D configuration) 20. Example 19 (Modification of Examples 15 to 18) 21. Example 20 (Modifications of Examples 5 to 19, Light-emitting element having 7-A configuration, Light-emitting element having 7-B configuration, Light-emitting element having 7-C configuration, and Light-emitting element having 7-D configuration) 22. Example 21 (Modification of Examples 5 to 20, Light-emitting device having eighth configuration) 23. Example 22 (Modification of Example 21) 24. Example 23 (another variation of Example 21) 25. Example 24 (Modification of Examples 21 to 23) 26.Other

[0011] <General Description of Light Emitting Device and Light Emitting Device Array of the Present Disclosure> In the light-emitting element array of the present disclosure, a partition wall extending in the stacking direction of the stacked structure may be formed so as to surround the first light reflecting layer in each light-emitting element.

[0012] In the above-mentioned preferred embodiment of the light-emitting device of the present disclosure or the light-emitting device array of the present disclosure, a partition wall is formed extending in the stacking direction of the laminated structure so as to surround the first light-reflecting layer, and the orthogonal projection image of the first light-reflecting layer may be included in the orthogonal projection image (hereinafter, sometimes referred to as "partition wall side surface") of the partition wall facing the first light-reflecting layer, or the orthogonal projection image of the partition wall side surface may be included in the orthogonal projection image of the portion of the first light-reflecting layer that does not contribute to light reflection (the non-effective region of the first light-reflecting layer). Alternatively, the base surface (described later) on which the first light-reflecting layer is formed may be included in the orthogonal projection image of the partition wall side surface. In addition, the partition wall side surface may be a continuous surface or a discontinuous surface with a portion cut out. In this specification, the "orthogonal projection image" means an orthogonal projection image obtained when orthogonally projected onto the laminated structure.

[0013] In the light-emitting element of the present disclosure, or the light-emitting element constituting the light-emitting element array of the present disclosure including the above-mentioned preferred embodiment (hereinafter, these may be collectively referred to as "light-emitting element, etc. of the present disclosure"), the partition wall may extend from the first surface side of the first compound semiconductor layer, through the first compound semiconductor layer, to the middle of the thickness direction of the first compound semiconductor layer. That is, the upper end of the partition wall may be located in the middle of the thickness direction of the first compound semiconductor layer. The lower end of the partition wall may be exposed to the first surface of the light-emitting element, or may not be exposed to the first surface of the light-emitting element. Here, the "first surface of the light-emitting element" refers to the exposed surface of the light-emitting element on the side where the first light reflecting layer is provided, and the "second surface of the light-emitting element" refers to the exposed surface of the light-emitting element on the side where the second light reflecting layer is provided. In such a form of the light-emitting element array of the present disclosure, the relationship between L0, L1, and L3 is as follows: The following formula (1) is satisfied, preferably formula (1') is satisfied, or The following formula (2) is satisfied, preferably the following formula (2'): The following formula (1) and formula (2) are satisfied, or It is desirable to satisfy the following formula (1') and formula (2'). 0.01×L0≦L0-L1(1) 0.05×L0≦L0-L1(1') 0.01×L3≦L1(2) 0.05×L3≦L1(2') Where: L0: distance from an end of the facing surface of the first light reflecting layer facing the first surface of the first compound semiconductor layer to the active layer L1: the distance from the active layer to the end of the partition wall that extends partway through the first compound semiconductor layer in the thickness direction of the first compound semiconductor layer (the upper end of the partition wall that faces the active layer) L3: The distance from the axis of the first light reflecting layer constituting the light emitting element to the orthogonal projection image of the partition wall onto the laminated structure (more specifically, the orthogonal projection image of the upper end portion of the partition wall) Although the upper limit of (L0-L1) is less than L0, in the case where a short circuit does not occur between the active layer and the first electrode due to the partition wall, the upper limit of (L0-L1) may be equal to or greater than L0.

[0014] Alternatively, in the light-emitting element etc. of the present disclosure, the partition wall can be configured to extend from the second surface side of the second compound semiconductor layer into the second compound semiconductor layer and into the active layer, and further extend into the first compound semiconductor layer to midway in the thickness direction of the first compound semiconductor layer. That is, the lower end of the partition wall can be configured to be located midway in the thickness direction of the first compound semiconductor layer. The upper end of the partition wall may or may not be exposed to the second surface of the light-emitting element. In such a configuration of the light-emitting element array of the present disclosure, the relationship between L0, L2 and L3' is as follows: The following formula (3) is satisfied, preferably the following formula (3'): The following formula (4) is satisfied, preferably formula (4') is satisfied, or The following formulas (3) and (4) are satisfied, or It is desirable to satisfy the following formula (3') and formula (4'). 0.01×L0≦L2(3) 0.05×L0≦L2(3') 0.01×L3'≦L2(4) 0.05×L3'≦L2(4') Where: L0: distance from an end of the facing surface of the first light reflecting layer facing the first surface of the first compound semiconductor layer to the active layer L2: distance from the active layer to an end of a partition wall extending partway through the first compound semiconductor layer in the thickness direction of the first compound semiconductor layer (a lower end of the partition wall, the end facing the first electrode) L3': the distance from the axis of the first light reflecting layer constituting the light emitting element to the orthogonal projection image of the partition wall onto the laminated structure (more specifically, the orthogonal projection image of the lower end of the partition wall) Although the upper limit of L2 is less than L0, if no short circuit occurs between the active layer and the first electrode due to the partition wall, the upper limit of L2 may be L0.

[0015] In the light-emitting device and the like of the present disclosure including the various preferred embodiments described above, the partition wall can be configured to be made of a material that does not transmit the light generated in the active layer, thereby preventing the occurrence of stray light and optical crosstalk. Specifically, such materials can include materials capable of blocking light, such as titanium (Ti), chromium (Cr), tungsten (W), tantalum (Ta), aluminum (Al), and MoSi2, and can be formed by, for example, an electron beam deposition method, a hot filament deposition method, a deposition method including a vacuum deposition method, a sputtering method, a CVD method, an ion plating method, and the like. Alternatively, a black resin film having an optical density of 1 or more containing a black colorant (specifically, for example, a black polyimide-based resin, an epoxy-based resin, or a silicone-based resin) can be included.

[0016] Alternatively, in the light-emitting device and the like of the present disclosure including the various preferred embodiments described above, the partition wall can be configured to be made of a material that reflects light generated in the active layer, which can prevent the occurrence of stray light and optical crosstalk, and can efficiently return the stray light to the light-emitting device itself, thereby contributing to improving the light-emitting efficiency of the light-emitting device. Specifically, the partition wall is configured of a thin-film filter that utilizes the interference of thin films. The thin-film filter has a different stacking direction (alternate arrangement direction) from the light-reflecting layer described later, but has the same configuration and structure. Specifically, a recess is formed in a part of the laminated structure, and the inside of this recess is filled with the same material as the light-reflecting layer, for example, based on a sputtering method, so that a thin-film filter in which dielectric layers are alternately arranged can be obtained when the partition wall is cut on a virtual plane perpendicular to the stacking direction of the laminated structure. Alternatively, examples of such materials include metal materials, alloy materials, and metal oxide materials. More specifically, examples of such materials include copper (Cu) and its alloys, gold (Au) and its alloys, tin (Sn) and its alloys, silver (Ag) and its silver alloys (e.g., Ag-Pd-Cu, Ag-Sm-Cu), platinum (Pt) and its alloys, palladium (Pd) and its alloys, titanium (Ti) and its alloys, aluminum (Al) and its aluminum alloys (e.g., Al-Nd and Al-Cu), an Al / Ti laminated structure, an Al-Cu / Ti laminated structure, chromium (Cr) and its alloys, and ITO. For example, the material can be formed by deposition methods including electron beam deposition, hot filament deposition, and vacuum deposition, sputtering, CVD, and ion plating; plating methods (electroplating and electroless plating); lift-off methods; laser ablation methods; sol-gel methods; plating methods, and the like.

[0017] Alternatively, in the light-emitting device and the like according to the present disclosure including the various preferred embodiments described above, when the thermal conductivity of the material constituting the first compound semiconductor layer is TC1 and the thermal conductivity of the material constituting the partition wall is TC0, 1×10 -1 ≦TC1 / TC0≦1×10 2 The partition wall can be formed in a form that satisfies the above. Specific examples of the material constituting such partition wall include metals such as silver (Ag), copper (Cu), gold (Au), tin (Sn), aluminum (Al), ruthenium (Ru), rhodium (Rh), platinum (Pt), or alloys thereof or mixtures of these metals, ITO, etc., and can be formed by, for example, deposition methods including electron beam deposition, hot filament deposition, and vacuum deposition, sputtering, CVD, ion plating, plating methods (electroplating and electroless plating), lift-off, laser ablation, sol-gel, plating, etc. In this way, by forming the partition wall from a material having high thermal conductivity, heat generated in the laminated structure can be exhausted (dissipated) to the outside through the partition wall. In this case, a partition extension portion may be formed on the outer surface (first surface or second surface) of the light-emitting element so that heat generated in the laminated structure can be exhausted (dissipated) to the outside via the partition and the partition extension portion, or the partition may be connected to the first electrode, the second electrode, or the pad electrode (described later) so that heat generated in the laminated structure can be exhausted (dissipated) to the outside via the partition and the first electrode, the second electrode, or the pad electrode.

[0018] Alternatively, in the light-emitting device and the like according to the present disclosure including the various preferred embodiments described above, when the linear expansion coefficient of the material constituting the first compound semiconductor layer is CTE1 and the linear expansion coefficient of the material constituting the partition wall is CTE0, |CTE0-CTE1|≦1×10 -4 / K The above can be achieved in a form that satisfies the above. Specific examples of materials constituting such partition walls include polyimide resins, silicone resins, epoxy resins, carbon materials, SOG, polycrystalline GaN, and single crystal GaN. By specifying the linear expansion coefficient in this way, the thermal expansion coefficient of the entire light-emitting element can be optimized, and the thermal expansion of the light-emitting element can be controlled (suppressed). Specifically, for example, the net thermal expansion coefficient of the laminated structure can be increased, and by matching it with the thermal expansion coefficient of the substrate material on which the light-emitting element is mounted, damage to the light-emitting element can be prevented, and a decrease in the reliability of the light-emitting element due to stress can be suppressed. The partition wall made of polyimide resin can be formed, for example, based on a spin-coating method and a curing method.

[0019] Alternatively, in the light-emitting elements and the like of the present disclosure including the various preferred embodiments described above, if the partition wall is made of an insulating material, it is possible to suppress the occurrence of electrical crosstalk, i.e., it is possible to prevent unnecessary current from flowing between adjacent light-emitting elements.

[0020] Alternatively, in the light-emitting device and the like of the present disclosure including the various preferred embodiments described above, the partition wall may be made of a solder material, and a part of the partition wall may be exposed on the outer surface of the light-emitting device. A kind of bump may be formed by the part of the partition wall exposed on the outer surface of the light-emitting device. Specific examples of materials that can be used to form such partition walls include Au-Sn eutectic solder, so-called low-melting point metal (alloy) materials, solder materials, and brazing materials, and examples of such materials include In (indium: melting point 157°C); indium-gold based low-melting point alloys; Sn 80 Ag 20 (Melting point 220~370℃), Sn 95 Cu5 (melting point 227-370°C) and other tin (Sn)-based high-temperature solders; Pb 97.5 Ag 2.5 (Melting point 304°C), Pb 94.5 Ag 5.5 (Melting point 304~365℃), Pb 97.5 Ag 1.5 Sn 1.0 (melting point 309°C) etc. Lead (Pb) based high temperature solder; Zn95 Zinc (Zn) based high temperature solder such as Al5 (melting point 380°C); Sn5Pb 95 (Melting point 300~314℃), Sn2Pb 98 (melting point 316~322℃) and other standard tin-lead solders; Au 88 Ga 12 (melting point 381°C) and other brazing materials (the above subscripts all indicate atomic %).

[0021] Furthermore, in the light-emitting device and the like of the present disclosure including the various preferred embodiments described above, the side surface of the partition can be narrowed along the direction from the first surface side of the first compound semiconductor layer toward the second surface side of the second compound semiconductor layer. That is, the shape of the side surface of the partition when the light-emitting device is cut on an imaginary plane including the stacking direction of the stacked structure can be a trapezoid (an isosceles trapezoid with the second compound semiconductor layer side being the short side and the first compound semiconductor layer side being the long side). This allows stray light to be returned to the light-emitting device itself more efficiently.

[0022] Examples of the shape of the side of the partition when the light emitting element is cut on a virtual plane including the stacking direction of the laminated structure include a line segment, an arc, a part of a parabola, and a part of an arbitrary curve. Examples of the shape of the side of the partition when the light emitting element is cut on a virtual plane perpendicular to the stacking direction of the laminated structure include a circle, an ellipse, an oval, a rectangle including a square and a rectangle, and a regular polygon (including a rounded regular polygon). Specific examples of the planar shape of the first light reflecting layer and the second light reflecting layer include a circle, an ellipse, an oval, a rectangle, and a regular polygon (equilateral triangle, square, regular hexagon, etc.). It is desirable that the planar shapes of the first light reflecting layer and the second light reflecting layer and the shape of the side of the partition when the light emitting element is cut on a virtual plane perpendicular to the stacking direction of the laminated structure are similar or approximate.

[0023] When the light-emitting elements are arranged in an array, the partition is provided so as to surround the first light-reflecting layer constituting each light-emitting element, but the region outside the side surface of the partition may be occupied by the partition (i.e., the space between the light-emitting elements may be occupied by the material constituting the partition), or may be occupied by a material other than the material constituting the partition (e.g., a laminated structure). In the latter case, the partition is formed, for example, in the shape of a continuous groove or a discontinuous groove.

[0024] In the light-emitting element array of the present disclosure, it is desirable that the formation pitch P0 of the light-emitting elements (the distance from the axis of the first light reflecting layer constituting a light-emitting element to the axis of the first light reflecting layer constituting an adjacent light-emitting element) be 3 μm or more and 50 μm or less, preferably 5 μm or more and 30 μm or less, and more preferably 8 μm or more and 25 μm or less.

[0025] In the light-emitting device and the like of the present disclosure, the laminated structure may be made of at least one material selected from the group consisting of GaN-based compound semiconductors, InP-based compound semiconductors, and GaAs-based compound semiconductors. (a) Structure made of GaN-based compound semiconductors (b) Structure made of InP-based compound semiconductors (c) Structure made of GaAs-based compound semiconductors (d) Composition consisting of GaN-based compound semiconductors and InP-based compound semiconductors (e) Composition consisting of GaN-based compound semiconductors and GaAs-based compound semiconductors (f) Composition consisting of InP-based compound semiconductors and GaAs-based compound semiconductors (g) Composition consisting of GaN-based compound semiconductors, InP-based compound semiconductors, and GaAs-based compound semiconductors Examples include:

[0026] In the light emitting device etc. of the present disclosure, the cavity length is L OR Then, 1×10 -5 m≦L OR It is preferable to satisfy the following:

[0027] In the light-emitting device etc. of the present disclosure, the thermal conductivity value of the laminated structure may be higher than that of the first light reflecting layer. The thermal conductivity value of the dielectric material constituting the first light reflecting layer is generally about 10 Watts / (m·K) or less. On the other hand, the thermal conductivity value of the GaN-based compound semiconductor constituting the laminated structure is about 50 Watts / (m·K) to 100 Watts / (m·K).

[0028] In the light-emitting device etc. of the present disclosure, when various compound semiconductor layers (including a compound semiconductor substrate) are present between the active layer and the first light reflecting layer, it is preferable that the materials constituting these various compound semiconductor layers (including a compound semiconductor substrate) do not have a refractive index modulation of 10% or more (there is no refractive index difference of 10% or more based on the average refractive index of the laminated structure), thereby making it possible to suppress the occurrence of disturbances in the optical field within the resonator.

[0029] The light-emitting element and the like of the present disclosure can be used to configure a surface-emitting laser element (vertical cavity laser, VCSEL) that emits laser light through a first light reflecting layer, or a surface-emitting laser element that emits laser light through a second light reflecting layer. In some cases, the substrate for manufacturing the light-emitting element (described later) may be removed.

[0030] In the light-emitting device and the like of the present disclosure, the stacked structure can be specifically configured to be made of, for example, an AlInGaN-based compound semiconductor as described above. More specifically, AlInGaN-based compound semiconductors can include GaN, AlGaN, InGaN, and AlInGaN. Furthermore, these compound semiconductors may contain boron (B) atoms, thallium (Tl) atoms, arsenic (As) atoms, phosphorus (P) atoms, and antimony (Sb) atoms as desired. The active layer desirably has a quantum well structure. Specifically, it may have a single quantum well structure (SQW structure) or a multiple quantum well structure (MQW structure). The active layer having a quantum well structure has a structure in which at least one well layer and barrier layer are stacked, and the combination of (the compound semiconductor constituting the well layer, the compound semiconductor constituting the barrier layer) is preferably (In y Ga (1-y) N,GaN), (In y Ga (1-y) N,In z Ga (1-z) N) [where y>z], (In y Ga (1-y) Examples of the semiconductor layers include GaN (GaN, AlGaN). The first compound semiconductor layer can be made of a compound semiconductor of a first conductivity type (e.g., n-type), and the second compound semiconductor layer can be made of a compound semiconductor of a second conductivity type (e.g., p-type) different from the first conductivity type. The first compound semiconductor layer and the second compound semiconductor layer are also called a first cladding layer and a second cladding layer. The first compound semiconductor layer and the second compound semiconductor layer may be layers of a single structure, layers of a multilayer structure, or layers of a superlattice structure. Furthermore, they may be layers provided with a composition gradient layer and a concentration gradient layer.

[0031] Alternatively, examples of group III atoms constituting the laminated structure include gallium (Ga), indium (In), and aluminum (Al), and examples of group V atoms constituting the laminated structure include arsenic (As), phosphorus (P), antimony (Sb), and nitrogen (N).Specific examples include AlAs, GaAs, AlGaAs, AlP, GaP, GaInP, AlInP, AlGaInP, AlAsP, GaAsP, AlGaAsP, AlInAsP, GaInAsP, AlInAs, GaInAs, AlGaInAs, AlAsSb, GaAsSb, AlGaAsSb, AlN, GaN, InN, AlGaN, GaNAs, and examples of compound semiconductors constituting the active layer include GaAs, AlGaAs, GaInAs, GaInAsP, GaInP, GaSb, GaAsSb, GaN, InN, GaInN, GaInNAs, and GaInNAsSb.

[0032] Examples of quantum well structures include a two-dimensional quantum well structure, a one-dimensional quantum well structure (quantum wire), and a zero-dimensional quantum well structure (quantum dot). Examples of materials constituting the quantum well include, but are not limited to, Si; Se; chalcopyrite compounds such as CIGS (CuInGaSe), CIS (CuInSe2), CuInS2, CuAlS2, CuAlSe2, CuGaS2, CuGaSe2, AgAlS2, AgAlSe2, AgInS2, and AgInSe2; perovskite materials; III-V compounds such as GaAs, GaP, InP, AlGaAs, InGaP, AlGaInP, InGaAsP, GaN, InAs, InGaAs, GaInNAs, GaSb, and GaAsSb; CdSe, CdSeS, CdS, CdTe, In2Se3, In2S3, Bi2Se3, Bi2S3, ZnSe, ZnTe, ZnS, HgTe, HgS, PbSe, PbS, and TiO2.

[0033] The laminated structure is formed on the second surface of the substrate for manufacturing the light-emitting element, or on the second surface of the compound semiconductor substrate. The second surface of the substrate for manufacturing the light-emitting element or the compound semiconductor substrate faces the first surface of the first compound semiconductor layer, and the first surface of the substrate for manufacturing the light-emitting element or the compound semiconductor substrate faces the second surface of the substrate for manufacturing the light-emitting element. Examples of the substrate for manufacturing the light-emitting element include a GaN substrate, a sapphire substrate, a GaAs substrate, a SiC substrate, an alumina substrate, a ZnS substrate, a ZnO substrate, an AlN substrate, a LiMgO substrate, a LiGaO2 substrate, a MgAl2O4 substrate, an InP substrate, and a Si substrate, and substrates having a base layer or a buffer layer formed on the surface (main surface) of these substrates. However, the use of a GaN substrate is preferable because of its low defect density. Examples of the compound semiconductor substrate include a GaN substrate, an InP substrate, and a GaAs substrate. It is known that the characteristics of a GaN substrate change between polar / non-polar / semi-polar depending on the growth surface, but any main surface (second surface) of a GaN substrate can be used to form a compound semiconductor layer. In addition, with respect to the main surface of the GaN substrate, depending on the crystal structure (e.g., cubic or hexagonal), the crystal plane orientations called the so-called A-plane, B-plane, C-plane, R-plane, M-plane, N-plane, S-plane, etc., or planes that are off in a specific direction, etc., can be used. Examples of methods for forming various compound semiconductor layers that constitute the light-emitting element include, but are not limited to, metal organic chemical vapor deposition (MOCVD, Metal Organic-Chemical Vapor Deposition, MOVPE, Metal Organic-Vapor Phase Epitaxy), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE) in which halogen contributes to transport or reaction, atomic layer deposition (ALD, Atomic Layer Deposition), migration-enhanced epitaxy (MEE, Migration-Enhanced Epitaxy), and plasma-assisted physical vapor deposition (PPD).

[0034] GaAs and InP materials have the same zinc blende structure. The main surface of a compound semiconductor substrate made of these materials can be (100), (111)AB, (211)AB, (311)AB, etc., as well as a surface off in a specific direction. Note that "AB" means that the off direction is different by 90 degrees, and this off direction determines whether the main material of the surface is group III or group V. By controlling these crystal plane orientations and film formation conditions, it is possible to control the composition unevenness and dot shape. As with GaN, film formation methods such as MBE, MOCVD, MEE, and ALD are generally used, but are not limited to these methods.

[0035] Here, in forming a GaN-based compound semiconductor layer, trimethylgallium (TMG) gas or triethylgallium (TEG) gas can be used as an organic gallium source gas in the MOCVD method, and ammonia gas or hydrazine gas can be used as a nitrogen source gas. In forming a GaN-based compound semiconductor layer having an n-type conductivity, silicon (Si) can be added as an n-type impurity (n-type dopant), and in forming a GaN-based compound semiconductor layer having a p-type conductivity, magnesium (Mg) can be added as a p-type impurity (p-type dopant). When aluminum (Al) or indium (In) is included as a constituent atom of the GaN-based compound semiconductor layer, trimethylaluminum (TMA) gas can be used as an Al source, and trimethylindium (TMI) gas can be used as an In source. Furthermore, monosilane gas (SiH4 gas) may be used as the Si source, and biscyclopentadienyl magnesium gas, methylcyclopentadienyl magnesium, or biscyclopentadienyl magnesium (Cp2Mg) may be used as the Mg source. Note that examples of n-type impurities (n-type dopants) include Ge, Se, Sn, C, Te, S, O, Pd, and Po, in addition to Si, and examples of p-type impurities (p-type dopants) include Zn, Cd, Be, Ca, Ba, C, Hg, and Sr, in addition to Mg.

[0036] When the laminated structure is made of InP-based compound semiconductors or GaAs-based compound semiconductors, metalorganic raw materials such as TMGa, TEGa, TMIn, and TMAl are generally used as group III raw materials. In addition, arsine gas (AsH3 gas), phosphine gas (PH3 gas), ammonia (NH3), and the like are used as group V raw materials. In addition, metalorganic raw materials may be used as group V raw materials, such as tertiary butyl arsine (TBAs), tertiary butyl phosphine (TBP), dimethyl hydrazine (DMHy), and trimethyl antimony (TMSb). These materials decompose at low temperatures, so they are effective for low-temperature growth. As n-type dopants, monosilane (SiH4) is used as a Si source, and hydrogen selenide (H2Se) is used as a Se source. In addition, dimethyl zinc (DMZn), biscyclopentadienyl magnesium (Cp2Mg), and the like are used as p-type dopants. As dopant materials, the same materials as those of GaN are candidates.

[0037] In the manufacture of the light-emitting element and the like of the present disclosure, the substrate for manufacturing the light-emitting element may be left as it is, or the substrate for manufacturing the light-emitting element may be removed after the active layer, the second compound semiconductor layer, the second electrode, and the second light reflecting layer are sequentially formed on the first compound semiconductor layer. Specifically, the active layer, the second compound semiconductor layer, the second electrode, and the second light reflecting layer are sequentially formed on the first compound semiconductor layer, and then the second light reflecting layer is fixed to a support substrate, and the substrate for manufacturing the light-emitting element is removed to expose the first compound semiconductor layer (the first surface of the first compound semiconductor layer). The substrate for manufacturing light-emitting elements can be removed by wet etching using an alkaline aqueous solution such as a sodium hydroxide solution or a potassium hydroxide solution, an ammonia solution + hydrogen peroxide solution, a sulfuric acid solution + hydrogen peroxide solution, a hydrochloric acid solution + hydrogen peroxide solution, or a phosphoric acid solution + hydrogen peroxide solution; dry etching methods such as chemical mechanical polishing (CMP), mechanical polishing, and reactive ion etching (RIE); lift-off methods using a laser, or a combination of these.

[0038] The support substrate may be, for example, one of the various substrates exemplified as substrates for manufacturing light-emitting elements, or may be an insulating substrate made of AlN or the like, a semiconductor substrate made of Si, SiC, Ge or the like, a metal substrate or an alloy substrate. However, it is preferable to use a substrate having electrical conductivity, or it is preferable to use a metal substrate or an alloy substrate from the viewpoints of mechanical properties, elastic deformation, plastic deformation, heat dissipation, and the like. The thickness of the support substrate may be, for example, 0.05 mm to 1 mm. As a method for fixing the second light reflecting layer to the support substrate, known methods such as solder bonding, room temperature bonding, bonding using adhesive tape, bonding using wax bonding, and a method using an adhesive can be used, but from the viewpoint of ensuring electrical conductivity, it is preferable to adopt the solder bonding method or the room temperature bonding method. For example, when a silicon semiconductor substrate, which is a conductive substrate, is used as the support substrate, it is preferable to adopt a method capable of bonding at a low temperature of 400 ° C or less in order to suppress warping due to differences in thermal expansion coefficient. When a GaN substrate is used as the support substrate, the bonding temperature may be 400 ° C or more.

[0039] The first electrode electrically connected to the first compound semiconductor layer may be common to the plurality of light-emitting elements, and the second electrode electrically connected to the second compound semiconductor layer may be common to the plurality of light-emitting elements, or may be provided individually for the plurality of light-emitting elements.

[0040] When the substrate for manufacturing a light-emitting element is left, the first electrode may be formed on the first surface of the substrate for manufacturing a light-emitting element, which faces the second surface of the substrate, or may be formed on the first surface of the compound semiconductor substrate, which faces the second surface of the substrate. When the substrate for manufacturing a light-emitting element is not left, the first electrode may be formed on the first surface of the first compound semiconductor layer constituting the laminated structure. In this case, since the first light reflecting layer is formed on the first surface of the first compound semiconductor layer, for example, the first electrode may be formed so as to surround the first light reflecting layer. The first electrode preferably has a single-layer or multi-layer structure containing at least one metal (including alloy) selected from the group consisting of gold (Au), silver (Ag), palladium (Pd), platinum (Pt), nickel (Ni), Ti (titanium), vanadium (V), tungsten (W), chromium (Cr), Al (aluminum), Cu (copper), Zn (zinc), tin (Sn) and indium (In). Specific examples include Ti / Au, Ti / Al, Ti / Al / Au, Ti / Pt / Au, Ni / Au, Ni / Au / Pt, Ni / Pt, Pd / Pt, and Ag / Pd. Note that the layer before the " / " in the multi-layer structure is located closer to the active layer. The same applies to the following explanation. The first electrode can be formed by a PVD method such as a vacuum deposition method or a sputtering method.

[0041] When the first electrode is formed so as to surround the first light reflecting layer, the first light reflecting layer and the first electrode may be in contact with each other. Alternatively, the first light reflecting layer and the first electrode may be spaced apart from each other. In some cases, the first electrode may be formed up to the edge of the first light reflecting layer, or the first light reflecting layer may be formed up to the edge of the first electrode.

[0042] The second electrode may be made of a transparent conductive material. Examples of the transparent conductive material constituting the second electrode include an indium-based transparent conductive material [specifically, for example, indium-tin oxide (ITO, indium tin oxide, Sn-doped In2O3, including crystalline ITO and amorphous ITO), indium-zinc oxide (IZO, indium zinc oxide), indium-gallium oxide (IGO), indium-doped gallium-zinc oxide (IGZO, In-GaZnO4), IFO (F-doped In2O3), ITiO (Ti-doped In2O3), InSn, and InSnZnO], and a tin-based transparent conductive material [specifically, for example, tin oxide (SnO X ), ATO (Sb-doped SnO2), FTO (F-doped SnO2)], zinc-based transparent conductive materials [specifically, for example, zinc oxide (including ZnO, Al-doped ZnO (AZO) and B-doped ZnO), gallium-doped zinc oxide (GZO), AlMgZnO (aluminum oxide and magnesium oxide-doped zinc oxide)], NiO, TiO X, graphene can be exemplified. Alternatively, the second electrode can be a transparent conductive film having a base layer of gallium oxide, titanium oxide, niobium oxide, antimony oxide, nickel oxide, or the like, or a transparent conductive material such as a spinel-type oxide or an oxide having a YbFe2O4 structure. However, the material constituting the second electrode is not limited to a transparent conductive material, depending on the arrangement state of the second light reflecting layer and the second electrode, and metals such as palladium (Pd), platinum (Pt), nickel (Ni), gold (Au), cobalt (Co), and rhodium (Rh) can also be used. The second electrode may be composed of at least one of these materials. The second electrode can be formed by a PVD method such as a vacuum deposition method or a sputtering method. Alternatively, a low-resistance semiconductor layer can be used as the transparent electrode layer, and in this case, specifically, an n-type GaN-based compound semiconductor layer can also be used. Furthermore, when the layer adjacent to the n-type GaN compound semiconductor layer is p-type, the electrical resistance at the interface can be reduced by joining the two via a tunnel junction. By making the second electrode out of a transparent conductive material, the current can be spread laterally (in the plane direction of the second compound semiconductor layer), and the current can be efficiently supplied to the current injection region (described later).

[0043] A first pad electrode and a second pad electrode may be provided on the first electrode and the second electrode to electrically connect with an external electrode or circuit (hereinafter, sometimes referred to as "external circuit, etc."). The pad electrode preferably has a single layer structure or a multilayer structure containing at least one metal selected from the group consisting of Ti (titanium), aluminum (Al), Pt (platinum), Au (gold), Ni (nickel), and Pd (palladium). Alternatively, the pad electrode may have a multilayer structure such as a Ti / Pt / Au multilayer structure, a Ti / Au multilayer structure, a Ti / Pd / Au multilayer structure, a Ti / Pd / Au multilayer structure, a Ti / Ni / Au multilayer structure, or a Ti / Ni / Au / Cr / Au multilayer structure. When the first electrode is composed of an Ag layer or an Ag / Pd layer, it is preferable to form a cover metal layer, for example, made of Ni / TiW / Pd / TiW / Ni, on the surface of the first electrode, and to form a pad electrode, for example, made of a multilayer structure of Ti / Ni / Au or a multilayer structure of Ti / Ni / Au / Cr / Au on the cover metal layer.

[0044] The light reflecting layers (distributed Bragg reflector layers, DBR layers) constituting the first light reflecting layer and the second light reflecting layer are made of, for example, a semiconductor multilayer film or a dielectric multilayer film. Examples of the dielectric material include oxides and nitrides of Si, Mg, Al, Hf, Nb, Zr, Sc, Ta, Ga, Zn, Y, B, Ti, etc. (for example, SiN X , AlN X , AlGaN X , GaN X , B.N. X ) or fluorides. Specifically, SiO X , TiO X , NbO X , ZrO X , TaO X , ZnO X , AlO X , HfO X , SiN X , AlN XAmong these dielectric materials, two or more types of dielectric films made of dielectric materials with different refractive indices can be alternately laminated to obtain a light reflecting layer. For example, SiO X / SiN Y , SiO X / TaO X , SiO X / NbO Y , SiO X / ZrO Y , SiO X / AlN Y A multilayer film such as a SiO 2 multilayer film is preferred. In order to obtain a desired light reflectance, the material, film thickness, number of layers, and the like constituting each dielectric film may be appropriately selected. The thickness of each dielectric film can be appropriately adjusted depending on the material used, and is determined by the oscillation wavelength (light emission wavelength) λ0 and the refractive index n at the oscillation wavelength λ0 of the material used. Specifically, it is preferable to set the thickness to an odd multiple of λ0 / (4n). For example, in a light emitting device with an oscillation wavelength λ0 of 410 nm, the light reflective layer may be made of SiO X / NbO Y When the light reflecting layer is made up of, for example, a thickness of about 40 nm to 70 nm can be exemplified. The number of layers can be 2 or more, preferably about 5 to 20. The total thickness of the light reflecting layer can be, for example, about 0.6 μm to 1.7 μm. The light reflectance of the light reflecting layer is desirably 95% or more. The size and shape of the light reflecting layer are not particularly limited as long as they cover the current injection region or the element region (which will be described later).

[0045] The light reflective layer can be formed based on well-known methods, and specific examples thereof include PVD methods such as vacuum deposition, sputtering, reactive sputtering, ECR plasma sputtering, magnetron sputtering, ion beam assisted deposition, ion plating, and laser ablation; various CVD methods; coating methods such as spraying, spin coating, and dipping; methods combining two or more of these methods; and methods combining these methods with one or more of full or partial pretreatment, irradiation with inert gas (Ar, He, Xe, etc.) or plasma, irradiation with oxygen gas, ozone gas, or plasma, oxidation treatment (heat treatment), and exposure treatment.

[0046] A current injection region is provided to regulate the current injection into the active layer. The shape of the boundary between the current injection region and the non-current injection inner region, the shape of the boundary between the non-current injection inner region and the non-current injection outer region, and the planar shape of the opening provided in the element region and the current confinement region can be specifically a circle, an ellipse, an oval, a rectangle, or a regular polygon (equilateral triangle, square, regular hexagon, etc.). It is desirable that the shape of the boundary between the current injection region and the non-current injection inner region, and the shape of the boundary between the non-current injection inner region and the non-current injection outer region are similar or approximate. Here, the "element region" refers to a region into which a confined current is injected, or a region into which light is confined due to a refractive index difference or the like, or a region in which laser oscillation occurs within the region sandwiched between the first light reflection layer and the second light reflection layer, or a region that actually contributes to laser oscillation within the region sandwiched between the first light reflection layer and the second light reflection layer.

[0047] The side surface or exposed surface of the laminated structure may be covered with a covering layer (insulating film). The covering layer (insulating film) can be formed based on a known method. The refractive index of the material constituting the covering layer (insulating film) is preferably smaller than the refractive index of the material constituting the laminated structure. The material constituting the covering layer (insulating film) is preferably SiO2-containing SiO X based materials, SiN X based materials, SiO Y N Z based materials, TaO X, ZrO X , AlN X , AlO X , GaO X Examples of the material include organic materials such as polyimide resins. Examples of the method for forming the coating layer (insulating film) include PVD methods such as vacuum deposition and sputtering, and CVD methods, and the coating layer can also be formed based on a coating method. EXAMPLES

[0048] Example 1 relates to a light-emitting element and a light-emitting element array of the present disclosure. The light-emitting element of the example is composed of a surface-emitting laser element (vertical cavity laser, VCSEL) that emits laser light. Schematic partial cross-sectional views of the light-emitting element array of Example 1 are shown in Figs. 1 and 3, schematic partial cross-sectional views of the light-emitting element are shown in Figs. 2 and 4, and schematic plan views of the arrangement of the first light reflection layer and the partition walls in the light-emitting element array of Example 1 are shown in Figs. 5, 6, 7, 8, 9, 10, 11, and 12. Here, Figs. 1 and 2 show an example in which the partition walls are made of a material that has no conductivity, and Figs. 3 and 4 show an example in which the partition walls are made of a material that has conductivity or an example in which the partition walls are made of a material that has no conductivity. Also, Figs. 5, 6, 9, and 11 show a case in which the light-emitting element is located on the vertices of a square lattice, and Figs. 7, 8, 10, and 12 show a case in which the light-emitting element is located on the vertices of an equilateral triangular lattice. Figures 1, 2, 3, and 4 are schematic partial cross-sectional views taken along the arrow AA in Figure 5 or Figure 7. In addition, in the figures, the Z axis indicates the axis of the first light reflecting layer constituting the light-emitting element (a perpendicular line passing through the center of the first light reflecting layer to the laminated structure).

[0049] The light emitting device 10A of Example 1 or the light emitting devices of Examples 2 to 24 described below are a first compound semiconductor layer 21 having a first surface 21a and a second surface 21b opposite to the first surface 21a; an active layer (light emitting layer) 23 facing the second surface 21b of the first compound semiconductor layer 21; and a second compound semiconductor layer 22 having a first surface 22a facing the active layer 23 and a second surface 22b opposite to the first surface 22a; A laminated structure 20 in which a first light reflecting layer 41 formed on the first surface side of the first compound semiconductor layer 21 and having a convex shape extending in a direction away from the active layer 23; and a second light reflecting layer 42 formed on the second surface side of the second compound semiconductor layer 22 and having a flat shape; It is equipped with A partition wall 24 is formed surrounding the first light reflecting layer 41 and extending in the stacking direction of the stacked structure 20 .

[0050] The light-emitting element array of Example 1 or Examples 2 to 24 described later is a light-emitting element array in which a plurality of light-emitting elements 10A are arranged, Each light emitting element 10A is a first compound semiconductor layer 21 having a first surface 21a and a second surface 21b opposite to the first surface 21a; an active layer (light emitting layer) 23 facing the second surface 21b of the first compound semiconductor layer 21; and a second compound semiconductor layer 22 having a first surface 22a facing the active layer 23 and a second surface 22b opposite to the first surface 22a; A laminated structure 20 in which a first light reflecting layer 41 formed on the first surface side of the first compound semiconductor layer 21 and having a convex shape extending in a direction away from the active layer 23; and a second light reflecting layer 42 formed on the second surface side of the second compound semiconductor layer 22 and having a flat shape; In each light emitting element 10A, a partition wall 24 extending in the stacking direction of the stacked structure 20 is formed so as to surround the first light reflecting layer 41.

[0051] As shown in the figure, the orthogonal projection image of the first light reflecting layer 41 may be included in the orthogonal projection image of the side surface 24' of the partition 24 facing the first light reflecting layer 41, or, although not shown, the orthogonal projection image of the partition side surface 24' may be included in the orthogonal projection image of a portion of the first light reflecting layer 41 that does not contribute to light reflection (a non-effective region of the first light reflecting layer 41). The side surface 24' of the partition 24 may be a continuous surface (see FIGS. 9 and 10) or a discontinuous surface with a portion cut out (see FIGS. 11 and 12). The same can be applied to the partition 25 of Example 2 described later.

[0052] In the light-emitting element 10A of Example 1, the partition wall 24 extends from the first surface side of the first compound semiconductor layer 21 through the first compound semiconductor layer 21 to the middle of the thickness direction of the first compound semiconductor layer 21. That is, the upper end portion (the end portion facing the active layer 23) 24b of the partition wall 24 is located halfway through the thickness direction of the first compound semiconductor layer 21. In the light-emitting element array of Example 1, the relationship between L0, L1 and L3 satisfies the above-mentioned relationship. Specifically, it is as shown in Table D described later.

[0053] The partition 24 is made of a material that does not transmit the light generated in the active layer 23. Alternatively, when the thermal conductivity of the material constituting the first compound semiconductor layer 21 is TC1 and the thermal conductivity of the material constituting the partition 24 is TC0, 1×10 -1 ≦TC1 / TC0≦1×10 2 Specifically, the material constituting the first compound semiconductor layer 21 is made of GaN, and the partition wall 24 is made of copper (Cu). TC0: 50 W / (m K) to 100 W / (m K) TC1: 400 W / (m K) For example, when the partition wall 24 made of a copper layer is formed by a plating method, a base layer made of an Au layer or the like having a thickness of about 0.1 μm is formed in advance as a seed layer by a sputtering method or the like, and then a copper layer is formed thereon by a plating method. By forming the partition wall 24 from a material having high thermal conductivity in this manner, heat generated in the laminated structure 20 can be effectively exhausted (dissipated) to the outside through the partition wall 24.

[0054] Alternatively, the partition 24 is made of a material that reflects the light generated in the active layer 23, such as silver (Ag).

[0055] Alternatively, when the linear expansion coefficient of the material (GaN) constituting the first compound semiconductor layer 21 is CTE1 and the linear expansion coefficient of the material (polyimide resin) constituting the partition wall 24 is CTE0, |CTE0-CTE1|≦1×10 -4 / K Specifically, CTE0:5.5×10 -6 / K CTE1:25×10 -6 / K By combining these materials, the net thermal expansion coefficient of the light emitting element 10A can be increased and matched with the thermal expansion coefficient of the substrate material on which the light emitting element 10A is mounted, thereby preventing damage to the light emitting element 10A and a decrease in reliability due to stress generation in the light emitting element 10A.

[0056] When the light emitting element 10A is cut in a virtual plane including the stacking direction of the stacked structure 20 (for example, the XZ plane in the illustrated example), the shape of the side surface 24' of the partition 24 is a line segment. When the light emitting element 10A is cut in a virtual plane perpendicular to the stacking direction of the stacked structure 20, the shape of the side surface 24' of the partition 24 is a circle. Furthermore, as shown in FIGS. 5 and 7, the partition 24 is provided so as to surround the first light reflecting layer 41 constituting each light emitting element 10A, and the region outside the side surface 24' of the partition 24 is occupied by the partition 24. That is, the space between the light emitting elements 10A is occupied by the material constituting the partition 24.

[0057] As shown in FIGS. 1 and 2, when the partition wall 24 is made of a material that has no electrical conductivity, a first electrode 31 is provided on the first surface 21a of the first compound semiconductor layer 21.

[0058] As shown in FIG. 3 and FIG. 4, when the partition 24 is made of a material having electrical conductivity, or when the partition 24 is made of a material having no electrical conductivity, the first electrode 31 may be provided on the exposed surface (lower end surface 24a) of the partition 24 (see also FIG. 5, FIG. 6, FIG. 7, and FIG. 8). Specifically, the lower end (the end facing the first electrode 31) 24a of the partition 24 is in contact with the first electrode 31 formed on the first surface 10a (the first surface 21a of the first compound semiconductor layer 21) of the light-emitting element 10A. The second surface 10b of the light-emitting element is the exposed surface of the light-emitting element. When the partition 24 is made of a material having electrical conductivity, the partition 24 may also serve as the first electrode 31. By making the partition 24 from a material having high thermal conductivity in this way, heat generated in the laminated structure 20 can be exhausted (dissipated) to the outside through the partition 24. Specifically, heat generated in the laminated structure 20 can be effectively discharged (dissipated) to the outside via the partition wall 24 and the first electrode 31 or the first pad electrode.

[0059] However, this is not limited thereto, and the space between the light emitting elements 10A may be occupied by a material (e.g., the laminated structure 20) other than the material constituting the partition 24. That is, the partition 24 may be formed, for example, in a continuous groove shape (see Figs. 9 and 10), or may be formed in a discontinuous groove shape (see Figs. 11 and 12). Note that in Figs. 9, 10, 11, and 12, the partition parts are shaded in order to clearly show the partition.

[0060] The first compound semiconductor layer 21 has a first conductivity type (specifically, n-type), and the second compound semiconductor layer 22 has a second conductivity type (specifically, p-type) different from the first conductivity type. In the light emitting device 10A of Example 1, the first surface 21a of the first compound semiconductor layer 21 constitutes a base surface 90. The first light reflecting layer 41 is formed on the base surface 90. The base surface 90 has a convex shape extending in a direction away from the active layer 23.

[0061] In the light-emitting element array, the formation pitch of the light-emitting elements 10A is desirably 3 μm or more and 50 μm or less, preferably 5 μm or more and 30 μm or less, and more preferably 8 μm or more and 25 μm or less. -5 The resonator length L OR is 1 x 10 -5 m≦L OR It is preferable to satisfy the following:

[0062] The laminated structure 20 may be made of at least one material selected from the group consisting of GaN-based compound semiconductors, InP-based compound semiconductors, and GaAs-based compound semiconductors. In the first embodiment, specifically, the laminated structure 20 is made of a GaN-based compound semiconductor.

[0063] The first compound semiconductor layer 21 has, for example, 2×10 16 cm -3 The active layer 23 is made of an n-GaN layer doped to a certain extent with In. 0.04 Ga 0.96 N layer (barrier layer) and In 0.16 Ga 0.84 The second compound semiconductor layer 22 has a five-layered multiple quantum well structure in which an N layer (well layer) is laminated. For example, the second compound semiconductor layer 22 has a magnesium content of 1×10 19 cm -3The first compound semiconductor layer 21 is made of a p-GaN layer doped to a certain extent. The plane orientation of the first compound semiconductor layer 21 is not limited to the {0001} plane, and may be, for example, the {20-21} plane, which is a semi-polar plane. The first electrode 31 made of Ti / Pt / Au is electrically connected to an external circuit or the like via a first pad electrode (not shown) made of, for example, Ti / Pt / Au or V / Pt / Au. On the other hand, the second electrode 32 is formed on the second compound semiconductor layer 22, and the second light reflecting layer 42 is formed on the second electrode 32. The second light reflecting layer 42 on the second electrode 32 has a flat shape. The second electrode 32 is made of a transparent conductive material, specifically, ITO having a thickness of 30 nm. A second pad electrode 33 made of, for example, Pd / Ti / Pt / Au, Ti / Pd / Au, or Ti / Ni / Au may be formed or connected on the edge of the second electrode 32 for electrical connection to an external circuit or the like (see Figs. 13, 14, 15, and 16). The first light reflecting layer 41 and the second light reflecting layer 42 are made of a laminated structure of a Ta2O5 layer and a SiO2 layer, or a laminated structure of a SiN layer and a SiO2 layer. Although the first light reflecting layer 41 and the second light reflecting layer 42 have a multi-layer structure as described above, they are shown as a single layer to simplify the drawings. The opening 31' provided in the first electrode 31, the first light reflecting layer 41, the second light reflecting layer 42, and the opening 34A provided in the insulating layer (current confinement layer) 34 each have a circular planar shape.

[0064] In order to obtain a current confinement region, an insulating material (e.g., SiO X and SiN X , AlO X), an insulating layer (current confinement layer) 34 made of a metal oxide film 32 may be formed, and the insulating layer (current confinement layer) 34 is provided with an opening 34A for injecting a current into the second compound semiconductor layer 22. Alternatively, in order to obtain a current confinement region, the second compound semiconductor layer 22 may be etched by an RIE method or the like to form a mesa structure. Alternatively, a part of the laminated second compound semiconductor layer 22 may be partially oxidized from the lateral direction to form a current confinement region. Alternatively, impurities (e.g., boron) may be ion-implanted into the second compound semiconductor layer 22 to form a current confinement region made of a region with reduced conductivity. Alternatively, these may be combined as appropriate. However, the second electrode 32 must be electrically connected to a portion of the second compound semiconductor layer 22 through which a current flows due to current confinement (current injection region).

[0065] 1, 2, 3, and 4, the second electrode 32 is common to the light-emitting elements 10A constituting the light-emitting element array, and the second electrode 32 is connected to an external circuit or the like via a first pad electrode (not shown). The first electrode 31 is also common to the light-emitting elements 10A constituting the light-emitting element array, and is connected to an external circuit or the like via a first pad electrode (not shown). Then, light may be emitted to the outside via the first light reflecting layer 41, or light may be emitted to the outside via the second light reflecting layer 42.

[0066] Alternatively, as shown in Fig. 13, a schematic partial cross-sectional view of a modified example-1 of the light-emitting element array of Example 1, and as shown in Fig. 14, a schematic partial cross-sectional view of a light-emitting element constituting the modified example-1 of the light-emitting element array of Example 1 shown in Fig. 13, the second electrode 32 is formed individually in the light-emitting element 10A constituting the light-emitting element array, and is connected to an external circuit or the like via a second pad electrode 33. The first electrode 31 is common to the light-emitting element 10A constituting the light-emitting element array, and is connected to an external circuit or the like via a first pad electrode (not shown). Then, light may be emitted to the outside via the first light reflecting layer 41, or light may be emitted to the outside via the second light reflecting layer 42.

[0067] Alternatively, FIG. 15 shows a schematic partial cross-sectional view of the modified example-2 of the light-emitting element array of Example 1, and FIG. 16 shows a schematic partial cross-sectional view of a light-emitting element constituting the modified example-2 of the light-emitting element array of Example 1 shown in FIG. 15. As shown in FIG. 16, the second electrode 32 is formed individually in the light-emitting element 10A constituting the light-emitting element array. In addition, a bump 35 is formed on the second pad electrode 33 formed on the second electrode 32, and is connected to an external circuit or the like via the bump 35. The first electrode 31 is common to the light-emitting element 10A constituting the light-emitting element array, and is connected to an external circuit or the like via a first pad electrode (not shown). The bump 35 is disposed on a portion of the second surface side of the second compound semiconductor layer 22 facing the base surface 90, and covers the second light reflecting layer 42. Examples of the bump 35 include a gold (Au) bump, a solder bump, and an indium (In) bump. The bump 35 can be disposed by a well-known method. Then, light is emitted to the outside through the first light reflecting layer 41. Incidentally, the light emitting element 10A shown in Fig. 1 may be provided with bumps 35. Examples of the shape of the bumps 35 include a cylindrical shape, an annular shape, and a hemispherical shape.

[0068] In addition, the modified examples of the light-emitting element array or light-emitting element of Example 1 shown in Figures 13, 14, 15, and 16 are modified examples of the light-emitting element array or light-emitting element of Example 1 shown in Figures 1 and 2, but they can also be modified examples of the light-emitting element array or light-emitting element of Example 1 shown in Figures 3 and 4.

[0069] In the light-emitting element array of Example 1 shown in Figs. 5 and 7, the parameters of the light-emitting element 10A are as shown in Table A below. The diameter of the first light reflecting layer 41 is indicated by D1, and the height of the base surface 90 is indicated by H1 (see Fig. 1). The specifications of the light-emitting element 10A of Example 1 shown in Figs. 5 and 7 are shown in Tables B and C below. The "number of light-emitting elements" refers to the number of light-emitting elements constituting one light-emitting element array. Furthermore, the values ​​of P0, L0, L1, and L3 are shown in Table D, and the values ​​of P0, L0, L2, and L3' in Example 2 described later are shown in Table E.

[0070] The thermal conductivity value of the laminated structure 20 is higher than that of the first light reflecting layer 41. The thermal conductivity value of the dielectric material constituting the first light reflecting layer 41 is about 10 Watts / (m·K) or less. On the other hand, the thermal conductivity value of the GaN-based compound semiconductor constituting the laminated structure 20 is about 50 Watts / (m·K) to 100 Watts / (m·K).

[0071] See Fig. 5 See Fig. 7 Formation pitch 25μm 20μm Radius of curvature R1100μm 200μm Diameter D120μm 15μm Height H12μm 2μm

[0072] Table B See Figure 5 Second light reflecting layer 42 SiO2 / Ta2O5 (11.5 pairs) Second electrode 32 ITO (thickness: 22 nm) Second compound semiconductor layer 22 p-GaN Active layer 23 InGaN (multiple quantum well structure) First compound semiconductor layer 21 n-GaN First light reflecting layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length L OR 25μm Oscillation wavelength (emission wavelength) λ0445nm Number of light emitting elements: 100 x 100

[0073] Table C: See Figure 7 Second light reflecting layer 42 SiO2 / SiN (9 pairs) Second electrode 32 ITO (thickness: 22 nm) Second compound semiconductor layer 22 p-GaN Active layer 23 InGaN (multiple quantum well structure) First compound semiconductor layer 21 n-GaN First light reflecting layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length L OR 25μm Oscillation wavelength (emission wavelength) λ0488nm Number of light emitting elements: 1000 x 1000

[0074] Table D Example 1 P0: 40μm L0: 30μm L1: 28μm L3: 18μm

[0075] Table E Example 2 P0: 20μm L0: 17μm L2: 12μm L3': 9μm

[0076] A method for manufacturing the light emitting device 10A or the light emitting device array of the first embodiment will be described in the fifth embodiment.

[0077] In the light-emitting element or light-emitting element array of the first embodiment, a partition wall is formed extending in the stacking direction of the stacked structure so as to surround the first light reflecting layer, so that it is possible to prevent the occurrence of optical crosstalk or the occurrence of thermal saturation, and as a result, it is possible to provide a light-emitting element and a light-emitting element array having high light-emitting efficiency and high reliability. EXAMPLES

[0078] Example 2 is a modification of Example 1. A schematic partial cross-sectional view of a light-emitting element array of Example 2 is shown in Fig. 17, and a schematic partial cross-sectional view of a light-emitting element is shown in Fig. 18.

[0079] In the light-emitting element 10B of Example 2, the partition wall 25A extends from the second surface side of the second compound semiconductor layer 22 into the second compound semiconductor layer 22 and the active layer 23, and further extends into the first compound semiconductor layer 21 to the middle of the thickness direction of the first compound semiconductor layer 21. That is, the lower end 25a of the partition wall 25A is located in the middle of the thickness direction of the first compound semiconductor layer 21. In the light-emitting element array of Example 2, the relationship between L0, L2, and L3' satisfies the above-mentioned relationship, as shown in Table E above. The upper end 25b of the partition wall 25B is exposed to the second surface 10b of the light-emitting element 10B.

[0080] 19 is a schematic partial cross-sectional view of a first modified example of the light emitting element 10B of Example 2, the upper end 25b of the partition 25B does not have to be exposed to the second surface 10b of the light emitting element 10B. Specifically, the upper end 25b of the partition 25B is covered with an insulating layer (current confinement layer) 34 and a second electrode 32.

[0081] 20 is a schematic partial cross-sectional view of Modification 2 of the light-emitting element 10B of Example 2, in which a side surface 25' of the partition wall 25C narrows in a direction from the first surface side of the first compound semiconductor layer 21 toward the second surface side of the second compound semiconductor layer 22. That is, when the light-emitting element 10B is cut along a virtual plane (for example, the XZ plane in the illustrated example) including the stacking direction of the stacked structure 20, the shape of the side surface of the partition wall 25C is a trapezoid, specifically, an isosceles trapezoid with the short side on the second compound semiconductor layer side and the long side on the first compound semiconductor layer side.

[0082] These partitions 25A, 25B, and 25C can be configured from the partitions described in the first embodiment.

[0083] 21 is a schematic partial cross-sectional view of Modification 3 of the light emitting element 10B of Example 2, in which the partition 25D is made of a solder material, specifically, for example, Au-Sn eutectic solder, and a portion 25D' of the partition 25D is formed on the outer surface (second surface 10b) of the light emitting element 10B. Specifically, the portion 25D' of the partition 25D exposed from the second surface 10b of the light emitting element 10 forms a kind of bump, and the portion 25D' of the partition 25D can be connected to an external circuit or the like. EXAMPLES

[0084] Example 3 is a modification of Examples 1 and 2. In Examples 1 and 2, the first light reflecting layer 41 is formed on the first surface 21a of the first compound semiconductor layer 21. In contrast, FIG. 22 shows a modification of the light emitting element of Example 1 as a light emitting element 10A' of Example 3, in which the first light reflecting layer 41 is formed on a sapphire substrate 40 as a substrate for manufacturing the light emitting element. Except for this point, the light emitting element or light emitting element array of Example 3 can have the same configuration and structure as the light emitting element or light emitting element array of Example 1 or Example 2, so detailed description will be omitted. The first electrode 31, not shown, is connected to the first compound semiconductor layer 21 in a region not shown. EXAMPLES

[0085] Example 4 is a modification of Examples 1 to 3. In Examples 1 and 2, the stacked structure 20 is made of a GaN-based compound semiconductor. On the other hand, in Example 4, the stacked structure 20 is made of an InP-based compound semiconductor. Specifically, the first compound semiconductor layer is made of Se at 1×10 18 cm -3 The active layer is made of InAs or InGaAsP quantum dots, and the second compound semiconductor layer is made of Zn at 1×10 19 cm -3The current confinement region is made of a stacked structure of n-InP layer / p-InP layer / n-InP layer, or an Fe-doped InP layer, or is formed based on an ion implantation method. The second electrode 32 is made of IZO or ITO having a thickness of 30 nm. Furthermore, in the light-emitting device of Example 4 as a modified example of Example 3, the first light reflection layer is formed on a semi-insulating InP substrate (undoped or doped with Fe) as a substrate for manufacturing the light-emitting device. Except for the above points, the light-emitting device or light-emitting device array of Example 4 can have the same configuration and structure as the light-emitting device or light-emitting device array of Examples 1 to 3, so detailed description will be omitted. EXAMPLES

[0086] Incidentally, in the light emitting elements 10A and 10B described in Examples 1 to 4, for example, the base surface 90 rises from the first surface 21a of the flat first compound semiconductor layer 21. Therefore, if a strong external force is applied to the light emitting elements 10A and 10B for some reason, stress is concentrated on the rising portion of the base surface 90, which may cause damage to the first compound semiconductor layer, etc.

[0087] Example 5 is a modification of Examples 1 to 4, and relates to a light-emitting element according to the second aspect of the present disclosure and a method for manufacturing a light-emitting element array according to the second aspect of the present disclosure, which will be described later, and specifically relates to a light-emitting element of the first configuration, a light-emitting element of the 1-A configuration, and a light-emitting element of the second configuration. Schematic partial end views of the light-emitting element of Example 5, the light-emitting element constituting the light-emitting element array of Example 5, and the light-emitting element obtained by the manufacturing method of the light-emitting element array of Example 5 (hereinafter, these light-emitting elements are collectively referred to as light-emitting element 10C) are shown in Figures 23, 24 (Modification-1), and 25 (Modification-2), and schematic partial end views of the light-emitting element array of Example 5 are shown in Figures 26, 27, and 28. Also, schematic partial end views of the first compound semiconductor layer and the like for explaining the manufacturing method of the light-emitting element array of Example 5 are shown in Figures 29A, 29B, 30, 31, 32A, 32B, 33A, 33B, 33C, 34A, and 34B.

[0088] In addition, in Figures 32A, 32B, 33A, 33B, 33C, 34A, and 34B, as well as Figures 41A, 41B, 42A, 42B, 43A, 43B, 51A, 51B, 51C, 52A, 52B, and 52C, the active layer, the second compound semiconductor layer, the second light reflecting layer, and the like are omitted. In addition, in Figures 37, 39, 46, 47A, and 47B, the first portion of the base surface is shown by a solid circle or ellipse for clarity, the center of the second portion of the base surface is shown by a solid circle for clarity, and the top portion of the annular convex shape of the second portion of the base surface is shown by a solid ring for clarity.

[0089] In the light emitting devices in Example 5 and Examples 6 to 24 described below, the partition walls 24, 25A, 25B, 25C, and 25D are not shown.

[0090] In order to prevent the above-mentioned problems such as damage from occurring, the light-emitting element array is the first light reflecting layer is formed on a base surface located on the first surface side of the first compound semiconductor layer, The base surface extends to a peripheral region surrounded by the plurality of light emitting elements; The base surface is preferably uneven and has a differentiable shape. For convenience, such a light-emitting element is referred to as a "light-emitting element array according to the second aspect of the present disclosure."

[0091] Alternatively, in the light-emitting device, the first light reflecting layer is formed on a base surface located on the first surface side of the first compound semiconductor layer, The base surface extends to a peripheral region; The base surface is preferably uneven and has a differentiable shape. For convenience, such a light-emitting device is referred to as a "light-emitting device according to the second aspect of the present disclosure."

[0092] Here, when the base surface is expressed as z=f(x,y), the differential value at the base surface is ∂z / ∂x=[∂f(x,y) / ∂x] y ∂z / ∂y=[∂f(x,y) / ∂y] x can be obtained.

[0093] In addition, in a method for producing a light-emitting element array according to the second aspect of the present disclosure, After forming the laminated structure, a second light reflecting layer is formed on the second surface side of the second compound semiconductor layer, and then forming a first sacrificial layer on a first portion of the base surface on which the first light reflecting layer is to be formed, and then forming a convex surface of the first sacrificial layer; forming a second sacrificial layer on a second portion of the base surface exposed between the first sacrificial layer and on the first sacrificial layer to provide an irregular surface of the second sacrificial layer; and The second sacrificial layer and the first sacrificial layer are etched back, and further etched back inward from the base surface, thereby forming a convex portion on the first portion of the base surface and at least a concave portion on the second portion of the base surface when the second surface of the first compound semiconductor layer is used as a reference, and then forming a first light reflective layer over a first portion of the base surface; For convenience, such a light-emitting element will be referred to as a "manufacturing method for a light-emitting element array according to the first embodiment of the present disclosure."

[0094] Alternatively, in a method for producing a light-emitting element array according to the second aspect of the present disclosure, After forming the laminated structure, a second light reflecting layer is formed on the second surface side of the second compound semiconductor layer, and then forming a first sacrificial layer on a first portion of the base surface on which the first light reflecting layer is to be formed, and then forming a convex surface of the first sacrificial layer; The first sacrificial layer is etched back, and then etched back from the base surface toward the inside, thereby forming a convex portion on the first portion of the base surface when the second surface of the first compound semiconductor layer is used as a reference, and then forming a second sacrificial layer on the base surface, and then etching back the second sacrificial layer, and then etching back further from the base surface toward the inside, thereby forming a convex portion on the first portion of the base surface and at least a concave portion on the second portion of the base surface when the second surface of the first compound semiconductor layer is used as a reference, and then Form a first light reflection layer on the first part of the base surface. Each step is provided. For the sake of convenience, such a light-emitting element is hereinafter referred to as "the manufacturing method of the light-emitting element array according to the second aspect of the present disclosure".

[0095] In the light-emitting element according to the second aspect of the present disclosure, the light-emitting element constituting the light-emitting element array according to the second aspect of the present disclosure, and the light-emitting element obtained by the manufacturing method of the light-emitting element array according to the first aspect to the second aspect of the present disclosure (hereinafter, these light-emitting elements may be collectively referred to as "the light-emitting element etc. according to the second aspect of the present disclosure"), the first light reflection layer is formed on the first part of the base surface, but there may be a case where an extension portion of the first light reflection layer is formed on the second part of the base surface occupying the peripheral region, or there may be a case where the extension portion of the first light reflection layer is not formed on the second part.

[0096] In the light-emitting element etc. according to the second aspect of the present disclosure, the base surface can be in a smooth form. Here, "smooth" is a term in analysis. For example, if the real variable function f(x) is differentiable at a < x < b and f'(x) is continuous, it can be said that it is continuously differentiable in a slogan sense and can also be expressed as smooth.

[0097] In the light-emitting element etc. according to the second aspect of the present disclosure including the above preferable form, when the second surface of the first compound semiconductor layer is used as a reference, the first part of the base surface on which the first light reflection layer is formed can have a convex shape upward. The light-emitting element etc. according to the second aspect of the present disclosure having such a configuration is referred to as "the light-emitting element of the first configuration".

[0098] In the light-emitting element of the first configuration, the boundary between the first part and the second part is (1) When the first light reflection layer does not extend in the peripheral region, the outer peripheral portion of the first light reflection layer (2) When the first light reflection layer extends in the peripheral region, the portion where the inflection point exists on the base surface extending from the first part to the second part can be defined as such.

[0099] In the light-emitting device of the first configuration, when the second surface of the first compound semiconductor layer is used as a reference, the second portion of the base surface occupying the peripheral region can be configured to have a downwardly convex shape. The light-emitting device according to the second aspect of the present disclosure having such a configuration is called a "light-emitting device of 1-A configuration". The center of the first portion of the base surface of the light-emitting device of the 1-A configuration can be configured to be located on the apex (intersection) of a square lattice, or the center of the first portion of the base surface can be configured to be located on the apex (intersection) of an equilateral triangular lattice. In the former case, the center of the second portion of the base surface can be configured to be located on the apex of a square lattice, and in the latter case, the center of the second portion of the base surface can be configured to be located on the apex of an equilateral triangular lattice.

[0100] In the light-emitting element of the 1-A configuration, the shape of the [first portion / second portion from the peripheral portion to the center portion] is (A) [Upward convex shape / downward convex shape] (B) [Continuing from an upward convex shape / downward convex shape to a line segment] (C) [Upward convex shape / upward convex shape continues into downward convex shape] (D) [Upward convex shape / Upward convex shape leads to downward convex shape, followed by a line segment] (E) [Upward convex shape / line segment leads to downward convex shape] (F) [Upward convex shape / downward convex shape continuing from a line segment to a line segment] In some cases, the base surface of the light emitting element terminates at the center of the second portion.

[0101] Alternatively, in the light-emitting device of the first configuration, when the second surface of the first compound semiconductor layer is used as a reference, the second portion of the base surface occupying the peripheral region can be configured to have a downwardly convex shape toward the center of the peripheral region, and an upwardly convex shape extending from the downwardly convex shape. A light-emitting device according to the second aspect of the present disclosure having such a configuration is referred to as a "light-emitting device of 1-B configuration." In the light-emitting device of 1-B configuration, when the distance from the second surface of the first compound semiconductor layer to the center of the first portion of the base surface is LL1 and the distance from the second surface of the first compound semiconductor layer to the center of the second portion of the base surface is LL2, LL2>LL1 In addition, when the radius of curvature of the center of the first portion of the base surface (i.e., the radius of curvature of the first light reflecting layer) is R1, and the radius of curvature of the center of the second portion of the base surface is R2, R1>R2 The value of LL2 / LL1 is not limited to the following, but may be: 1 <LL2 / LL1≦100 The value of R1 / R2 can be, but is not limited to, 1 <R1 / R2≦100 Examples include:

[0102] In the light-emitting element of the 1-B configuration including the above-mentioned preferred configuration, the center of the first portion of the base surface may be configured to be located on the apex (intersection) of a square lattice, in which case the center of the second portion of the base surface may be configured to be located on the apex of the square lattice. Alternatively, the center of the first portion of the base surface may be configured to be located on the apex (intersection) of an equilateral triangular lattice, in which case the center of the second portion of the base surface may be configured to be located on the apex of the equilateral triangular lattice.

[0103] In the light-emitting element of the 1-B configuration, the shape of the [first portion / second portion from the peripheral portion to the center portion] is (A) [Upward convex shape / downward convex shape followed by upward convex shape] (B) [Upward convex shape / upward convex shape continues to downward convex shape to upward convex shape] (C) [Upward convex shape / line segment leads to downward convex shape, then to upward convex shape] There are cases like this.

[0104] Alternatively, in the light-emitting device of the first configuration, when the second surface of the first compound semiconductor layer is used as a reference, the second portion of the base surface occupying the peripheral region can be configured to have an annular convex shape surrounding the first portion of the base surface, and a downwardly convex shape extending from the annular convex shape toward the first portion of the base surface. A light-emitting device according to the second aspect of the present disclosure having such a configuration will be referred to as a "light-emitting device of 1-C configuration".

[0105] In the light-emitting device of configuration 1-C, when the distance from the second surface of the first compound semiconductor layer to the center of the first portion of the base surface is defined as LL1 and the distance from the second surface of the first compound semiconductor layer to the top of the annular convex shape of the second portion of the base surface is defined as LL2', LL2'>LL1 In addition, when the radius of curvature of the center of the first portion of the base surface (i.e., the radius of curvature of the first light reflecting layer) is R1, and the radius of curvature of the apex of the annular convex shape of the second portion of the base surface is R2', R1>R2' The value of LL2' / LL1 is not limited to the following, but may be: 1 <LL2’ / LL1≦100 Examples of the value of R1 / R2' include, but are not limited to, 1 <R1 / R2’≦100 The following can be mentioned.

[0106] In the light-emitting element of the 1-C configuration, the shape of the [first portion / second portion from the peripheral portion to the center portion] is (A) [From an upward convex shape / downward convex shape to an upward convex shape / downward convex shape] (B) [Continuing from an upward convex shape / downward convex shape to an upward convex shape, a downward convex shape, and a line segment] (C) [Continuing from an upward convex shape / upward convex shape to a downward convex shape, an upward convex shape, and a downward convex shape] (D) [Upwardly convex shape / upwardly convex shape to downwardly convex shape to upwardly convex shape to downwardly convex shape, followed by a line segment] (E) [Upward convex shape / Continuing from a line segment to a downward convex shape, an upward convex shape, and a downward convex shape] (F) [Upward convex shape / Continuing from a line segment to a downward convex shape, an upward convex shape, a downward convex shape, and a line segment] In some cases, the base surface of the light emitting element terminates at the center of the second portion.

[0107] In the light emitting device of the 1-B configuration or the 1-C configuration including the preferred configuration described above, a bump may be provided on the second surface side of the second compound semiconductor layer facing the convex portion of the second portion of the base surface. Alternatively, in the light emitting device of the 1-A configuration including the preferred configuration described above, a bump may be provided on the second surface side of the second compound semiconductor layer facing the center of the first portion of the base surface. Examples of the bump include a gold (Au) bump, a solder bump, and an indium (In) bump, and the bump may be provided by a known method. Specifically, the bump is provided on a second pad electrode (described later) provided on the second electrode, or on an extension of the second pad electrode.

[0108] Furthermore, in the light-emitting device according to the second aspect of the present disclosure including the above-described preferred embodiments and configurations, the radius of curvature R1 of the center of the first portion of the base surface is 1×10 -5 m or more, preferably 3×10 -5 m or more. Furthermore, 3×10 -4 m or more. In either case, the value of R1 is the resonator length L OR is greater than the value of

[0109] The radius of curvature R2 at the center of the second portion of the base surface is 1×10 -6 m or more, preferably 3×10 -6 m or more, preferably 5×10 -6 m or more, and the radius of curvature R2' of the apex of the annular convex shape of the second portion of the base surface is preferably 1×10 -6 m or more, preferably 3×10 -6 m or more, preferably 5×10 -6 It is desirable that it be at least m.

[0110] In the light-emitting device according to the second aspect of the present disclosure including the preferred embodiment and configuration described above, the figure drawn by the first part of the base surface when the base surface is cut on a virtual plane including the stacking direction of the stacked structure can be a part of a circle, a part of a parabola, a part of a sine curve, a part of an ellipse, or a part of a catenary curve. The figure may not be a part of a circle, a part of a parabola, a part of a sine curve, a part of an ellipse, or a part of a catenary curve in the strict sense. That is, the figure may be a part of a circle, a part of a parabola, a part of a sine curve, a part of an ellipse, or a part of a catenary curve in the strict sense. The figure may be a part of a circle, a part of a parabola, a part of a sine curve, a part of an ellipse, or a part of a catenary curve in the strict sense. A part of these curves may be replaced by a line segment. The figure drawn by the base surface can be obtained by measuring the shape of the base surface with a measuring instrument and analyzing the obtained data based on the least squares method.

[0111] Furthermore, in the light-emitting device according to the second aspect of the present disclosure including the preferred embodiments and configurations described above, the first surface of the first compound semiconductor layer may constitute the base surface. A light-emitting device having such a configuration is called a "light-emitting device of second configuration" for convenience. Alternatively, a compound semiconductor substrate may be disposed between the first surface of the first compound semiconductor layer and the first light reflecting layer, and the base surface may be constituted by the surface of the compound semiconductor substrate. A light-emitting device having such a configuration is called a "light-emitting device of third configuration" for convenience. In this case, for example, the compound semiconductor substrate may be a GaN substrate. The GaN substrate may be any of a polar substrate, a semi-polar substrate, and a non-polar substrate. The compound semiconductor substrate may have a thickness of 5×10 -5 m to 1×10 -4 m can be exemplified, but is not limited to such a value. Alternatively, a base material is disposed between the first surface of the first compound semiconductor layer and the first light reflecting layer, or a compound semiconductor substrate and a base material are disposed between the first surface of the first compound semiconductor layer and the first light reflecting layer, and the base surface is constituted by the surface of the base material. For convenience, a light-emitting element having such a configuration is called a "light-emitting element of a fourth configuration". Examples of materials constituting the base material include transparent dielectric materials such as TiO2, Ta2O5, and SiO2, silicone-based resins, and epoxy-based resins.

[0112] The light-emitting device 10C of Example 5 will be specifically described below.

[0113] In the light emitting device 10C of Example 5, the base surface 90 of the light emitting device 10A, 10B described in Examples 1 to 4 extends to the peripheral region 99, the base surface 90 is uneven, and is differentiable. That is, in the light emitting device 10C of Example 5, the base surface 90 is analytically smooth. The first light reflecting layer 41 is formed on the base surface 90 located on the first surface side of the first compound semiconductor layer 21, similar to the light emitting device 10A, 10B described in Examples 1 to 4, and the second light reflecting layer 42 is formed on the second surface side of the second compound semiconductor layer 22 and has a flat shape. Furthermore, the partition wall 24 described in Example 1 or the partition walls 25A, 25B, 25C, and 25D described in Example 2 are formed. However, for the sake of simplicity of the drawings, the partition walls 24, 25A, 25B, 25C, and 25D are omitted from the illustration.

[0114] The light emitting element array of Example 5 is configured by arranging a plurality of light emitting elements, and each light emitting element is configured from the light emitting element 10C of Example 5. The base surface 90 extends to the peripheral region 99.

[0115] When the second surface 21b of the first compound semiconductor layer 21 is taken as a reference, the first portion 91 of the base surface 90 on which the first light reflecting layer 41 is formed has an upwardly convex shape, and when the second surface 21b of the first compound semiconductor layer 21 is taken as a reference, the second portion 92 of the base surface 90 occupying the peripheral region 99 has a downwardly convex shape. c are located on the vertices (intersections) of a square grid (see, for example, FIGS. 5, 6, 9, and 11 for the arrangement), or alternatively, the central portion 91 of the first portion 91 of the base surface 90. c are located on the vertices (intersections) of a lattice of equilateral triangles (see, for example, Figures 7, 8, 10, and 12 for the arrangement).

[0116] The first light reflecting layer 41 is formed on a first portion 91 of the base surface 90, but an extension portion of the first light reflecting layer 41 may be formed on a second portion 92 of the base surface 90 occupying the peripheral region 99, or an extension portion of the first light reflecting layer 41 may not be formed on the second portion 92. In Example 5, an extension portion of the first light reflecting layer 41 is not formed on the second portion 92 of the base surface 90 occupying the peripheral region 99.

[0117] In the light-emitting element 10C of Example 5, the boundary 90 between the first portion 91 and the second portion 92 bd teeth, (1) When the first light reflecting layer 41 does not extend to the peripheral region 99, the outer periphery of the first light reflecting layer 41 (2) When the first light reflecting layer 41 extends into the peripheral region 99, a portion where an inflection point exists on the base surface 90 from the first portion 91 to the second portion 92 Here, the light-emitting element 10C of Example 5 specifically corresponds to case (1).

[0118] In the light emitting element 10C of Example 5, the shape of [the first portion 91 / the second portion 92 from the peripheral portion to the center portion] is (A) [Upward convex shape / downward convex shape] (B) [Continuing from an upward convex shape / downward convex shape to a line segment] (C) [Upward convex shape / upward convex shape continues into downward convex shape] (D) [Upward convex shape / Upward convex shape leads to downward convex shape, followed by a line segment] (E) [Upward convex shape / line segment leads to downward convex shape] (F) [Upward convex shape / downward convex shape continuing from a line segment to a line segment] There are cases such as those mentioned above, but the light-emitting element 10C of Example 5 specifically corresponds to case (A).

[0119] In the light-emitting device 10C of Example 5, the first surface 21a of the first compound semiconductor layer 21 constitutes the base surface 90. The figure drawn by the first portion 91 of the base surface 90 when the base surface 90 is cut by a virtual plane (for example, the XZ plane in the illustrated example) including the stacking direction of the stacked structure 20 is differentiable, and more specifically, it can be a part of a circle, a part of a parabola, a part of a sine curve, a part of an ellipse, or a part of a catenary curve, or a combination of these curves, and a part of these curves may be replaced with a line segment. The figure drawn by the second portion 92 is also differentiable, and more specifically, it can be a part of a circle, a part of a parabola, a part of a sine curve, a part of an ellipse, or a part of a catenary curve, or a combination of these curves, and a part of these curves may be replaced with a line segment. Furthermore, the boundary between the first portion 91 and the second portion 92 of the base surface 90 is also differentiable.

[0120] In the light-emitting element array, the formation pitch of the light-emitting elements is desirably 3 μm or more and 50 μm or less, preferably 5 μm or more and 30 μm or less, and more preferably 8 μm or more and 25 μm or less. c The radius of curvature R1 is 1×10 -5 The resonator length L OR is 1 x 10 -5 m≦L OR In the light-emitting element array of Example 5, which has the same arrangement as that shown in Figures 5 and 7, the parameters of the light-emitting element 10C are the same as those in Table 1 below. Note that the diameter of the first light reflecting layer 41 is indicated by D1, the height of the first portion 91 is indicated by H1, and the center 92 of the second portion 92 of the base surface 90 is indicated by H2. c The radius of curvature of the first portion 91 is indicated by R2. Here, the height H1 of the first portion 91 is the distance from the second surface 21b of the first compound semiconductor layer 21 to the center 91 of the base surface 90. c LL1 is a distance from the second surface 21b of the first compound semiconductor layer 21 to the center 92 of the second portion 92 of the base surface 90. c When the distance to is LL2, H1=LL1-LL2 The specifications of the light-emitting element 10C of Example 5, which has the same arrangement as that shown in Fig. 5 and Fig. 7, are shown in Tables 2 and 3 below. Note that the "number of light-emitting elements" refers to the number of light-emitting elements constituting one light-emitting element array.

[0121] As shown in Fig. 23 and Fig. 26, the second electrode 32 is common to the light-emitting elements 10C constituting the light-emitting element array, and the second electrode is connected to an external circuit or the like via a first pad electrode (not shown). The first electrode 31 is also common to the light-emitting elements 10C constituting the light-emitting element array, and is connected to an external circuit or the like via a first pad electrode (not shown). In the light-emitting element 10C shown in Fig. 23 and Fig. 26, light may be emitted to the outside via the first light reflecting layer 41, or light may be emitted to the outside via the second light reflecting layer 42.

[0122] 24 and 27, the second electrode 32 is formed individually in the light-emitting element 10C constituting the light-emitting element array, and is connected to an external circuit or the like via a second pad electrode 33. The first electrode 31 is common to the light-emitting element 10C constituting the light-emitting element array, and is connected to an external circuit or the like via a first pad electrode (not shown). In the light-emitting element 10C shown in FIGS. 24 and 27, light may be emitted to the outside via the first light reflecting layer 41, or light may be emitted to the outside via the second light reflecting layer 42.

[0123] Alternatively, as shown in Figures 25 and 28, the second electrode 32 is formed individually in each light-emitting element 10C constituting the light-emitting element array, and a bump 35 is formed on a second pad electrode 33 formed on the second electrode 32, and is connected to an external circuit or the like via the bump 35. The first electrode 31 is common to the light-emitting elements 10C constituting the light-emitting element array, and is connected to an external circuit or the like via a first pad electrode (not shown). The bump 35 is formed at a center 91 of a first portion 91 of the base surface 90. cThe bump 35 is disposed on a portion of the second surface side of the second compound semiconductor layer 22 facing the first light reflecting layer 41, and covers the second light reflecting layer 42. Examples of the bump 35 include a gold (Au) bump, a solder bump, and an indium (In) bump, and the method of disposing the bump 35 can be a well-known method. In the light emitting element 10C shown in Figs. 25 and 28, light is emitted to the outside through the first light reflecting layer 41. The bump 35 may be provided in the light emitting element 10C shown in Fig. 23. Examples of the shape of the bump 35 include a cylindrical shape, an annular shape, and a hemispherical shape.

[0124] See the layout in Figure 5. See the layout in Figure 7. Formation pitch 25μm 20μm Radius of curvature R1100μm 200μm Diameter D120μm 15μm Height H12μm 2μm Radius of curvature R22μm 3μm

[0125] Table 2: See the layout in Figure 5. Second light reflecting layer 42 SiO2 / Ta2O5 (11.5 pairs) Second electrode 32 ITO (thickness: 22 nm) Second compound semiconductor layer 22 p-GaN Active layer 23 InGaN (multiple quantum well structure) First compound semiconductor layer 21 n-GaN First light reflecting layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length L OR 25μm Oscillation wavelength (emission wavelength) λ0445nm Number of light emitting elements: 100 x 100

[0126] Table 3: See the layout in Figure 7 Second light reflecting layer 42 SiO2 / SiN (9 pairs) Second electrode 32 ITO (thickness: 22 nm) Second compound semiconductor layer 22 p-GaN Active layer 23 InGaN (multiple quantum well structure) First compound semiconductor layer 21 n-GaN First light reflecting layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length L OR 25μm Oscillation wavelength (emission wavelength) λ0488nm Number of light emitting elements: 1000 x 1000

[0127] Below, the manufacturing method of the light-emitting element array of Example 5 will be described with reference to Figures 29A, 29B, 30, 31, 32A, 32B, 33A, 33B, 33C, 34A and 34B, which are schematic partial end views of the first compound semiconductor layer, etc.

[0128] First, after forming the stacked structure 20, the second light reflecting layer 42 is formed on the second surface side of the second compound semiconductor layer 22.

[0129] [Process-500] Specifically, on the second surface 11b of the compound semiconductor substrate 11 having a thickness of about 0.4 mm, a first compound semiconductor layer 21 having a first surface 21a and a second surface 21b opposite to the first surface 21a; an active layer (light emitting layer) 23 facing the second surface 21b of the first compound semiconductor layer 21; and a second compound semiconductor layer 22 having a first surface 22a facing the active layer 23 and a second surface 22b opposite to the first surface 22a; To form a layered structure 20 made of GaN-based compound semiconductors, a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22 are sequentially formed on the second surface 11b of the compound semiconductor substrate 11 based on an epitaxial growth method using a well-known MOCVD method, thereby obtaining the layered structure 20 (see FIG. 29A).

[0130] [Process-510] Next, an insulating layer (current confinement layer) 34 made of SiO2 and having an opening 34A is formed on the second surface 22b of the second compound semiconductor layer 22 by a combination of a film formation method such as a CVD method, a sputtering method, or a vacuum deposition method and a wet etching method or a dry etching method (see FIG. 29B). A current confinement region (current injection region 61A and current non-injection region 61B) is defined by the insulating layer 34 having the opening 34A. That is, the current injection region 61A is defined by the opening 34A.

[0131] [Process-520] Thereafter, the second electrode 32 and the second light reflecting layer 42 are formed on the second compound semiconductor layer 22. Specifically, the second electrode 32 is formed, for example, by a lift-off method from the second surface 22b of the second compound semiconductor layer 22 exposed at the bottom surface of the opening 34A (current injection region 61A) to the insulating layer 34, and further, if desired, the second pad electrode 33 is formed based on a combination of a film forming method such as a sputtering method or a vacuum deposition method and a patterning method such as a wet etching method or a dry etching method. Next, the second light reflecting layer 42 is formed from above the second electrode 32 to above the second pad electrode 33 based on a combination of a film forming method such as a sputtering method or a vacuum deposition method and a patterning method such as a wet etching method or a dry etching method. The second light reflecting layer 42 on the second electrode 32 has a flat shape. In this way, the structure shown in FIG. 30 can be obtained. Thereafter, if desired, the central portion 91 of the first portion 91 of the base surface 90 is formed. c A bump 35 may be provided on a portion of the second surface side of the second compound semiconductor layer 22 facing the second light reflecting layer 42. Specifically, the bump 35 may be formed on a second pad electrode 33 (see FIGS. 25 and 26B) formed on the second electrode 32 so as to cover the second light reflecting layer 42, and the second electrode 32 is connected to an external circuit or the like via the bump 35.

[0132] [Process-530] Next, the second light reflecting layer 42 is fixed to a support substrate 49 via a bonding layer 48 (see FIG. 31). Specifically, the second light reflecting layer 42 (or the bumps 35) is fixed to a support substrate 49 made of a sapphire substrate using a bonding layer 48 made of an adhesive.

[0133] [Process-540] Next, the compound semiconductor substrate 11 is thinned by mechanical polishing or CMP, and further, the compound semiconductor substrate 11 is removed by etching.

[0134] [Process-550] Thereafter, a first sacrificial layer 81 is formed on a first portion 91 of a base surface 90 (specifically, a first surface 21a of a first compound semiconductor layer 21) on which a first light reflection layer 41 is to be formed, and then the surface of the first sacrificial layer is made convex. Specifically, a first resist material layer is formed on the first surface 21a of a first compound semiconductor layer 21, and the first resist material layer is patterned so as to leave the first resist material layer on the first portion 91, thereby obtaining the first sacrificial layer 81 shown in FIG. 32A. Then, the first sacrificial layer 81 is subjected to a heat treatment, thereby obtaining a structure shown in FIG. 32B. Next, an ashing treatment is performed on the surface of the first sacrificial layer 81' (a plasma irradiation treatment is performed) to alter the surface of the first sacrificial layer 81', and when a second sacrificial layer 82 is formed in the next step, damage, deformation, and the like are prevented from occurring in the first sacrificial layer 81'.

[0135] [Process-560] Next, a second sacrificial layer 82 is formed on the second portion 92 of the base surface 90 exposed between the first sacrificial layers 81' and on the first sacrificial layer 81' to make the surface of the second sacrificial layer 82 uneven (see FIG. 33A). Specifically, the second sacrificial layer 82 made of a second resist material layer having an appropriate thickness is formed on the entire surface. In the example of the arrangement shown in FIG. 5, the average film thickness of the second sacrificial layer 82 is 2 μm, and in the example of the arrangement shown in FIG. 7, the average film thickness of the second sacrificial layer 82 is 5 μm.

[0136] If it is necessary to make the radius of curvature R1 of the first portion 91 of the base surface 90 larger, [Step-550] and [Step-560] may be repeated.

[0137] The material constituting the first sacrificial layer 81 and the second sacrificial layer 82 is not limited to a resist material, and may be an oxide material (e.g., SiO2, SiN, TiO2, etc.), a semiconductor material (e.g., Si, GaN, InP, GaAs, etc.), a metal material (e.g., Ni, Au, Pt, Sn, Ga, In, Al, etc.), or other material appropriate for the first compound semiconductor layer 21. In addition, by using a resist material having an appropriate viscosity as the resist material constituting the first sacrificial layer 81 and the second sacrificial layer 82, and by appropriately setting and selecting the thickness of the first sacrificial layer 81, the thickness of the second sacrificial layer 82, the diameter of the first sacrificial layer 81', etc., the value of the radius of curvature of the base surface 90 and the shape of the unevenness of the base surface 90 (e.g., the diameter D1 and the height H1) can be set to a desired value and shape.

[0138] [Process-570] Thereafter, the second sacrificial layer 82 and the first sacrificial layer 81' are etched back, and further etched back from the base surface 90 toward the inside (i.e., from the first surface 21a of the first compound semiconductor layer 21 toward the inside of the first compound semiconductor layer 21), thereby forming a convex portion 91A on the first portion 91 of the base surface 90 and at least a concave portion (in the fifth embodiment, a concave portion 92A) on the second portion 92 of the base surface 90, when the second surface 21b of the first compound semiconductor layer 21 is taken as a reference. In this way, the structure shown in FIG. 33B can be obtained. The etch back can be performed based on a dry etching method such as the RIE method, or based on a wet etching method using hydrochloric acid, nitric acid, hydrofluoric acid, phosphoric acid, a mixture thereof, or the like.

[0139] [Process-580] Next, the first light reflecting layer 41 is formed on the first portion 91 of the base surface 90. Specifically, after forming the first light reflecting layer 41 on the entire surface of the base surface 90 based on a film forming method such as a sputtering method or a vacuum deposition method (see FIG. 33C), the first light reflecting layer 41 is patterned to obtain the first light reflecting layer 41 on the first portion 91 of the base surface 90 (see FIG. 34A). Then, the first electrode 31 common to each light emitting element is formed on the second portion 92 of the base surface 90 (see FIG. 34B). In this manner, the light emitting element array or the light emitting element 10C of the fifth embodiment can be obtained. If the first electrode 31 is made to protrude from the first light reflecting layer 41, the first light reflecting layer 41 can be protected.

[0140] [Process-590] Thereafter, the support substrate 49 is peeled off, and the light-emitting element arrays are individually separated. Then, they are electrically connected to an external electrode or circuit (a circuit for driving the light-emitting element array). Specifically, the first compound semiconductor layer 21 is connected to an external circuit or the like via the first electrode 31 and a first pad electrode (not shown), and the second compound semiconductor layer 22 is connected to an external circuit or the like via the second pad electrode 33 or a bump 35. Next, the light-emitting element array of Example 5 is completed by packaging or sealing.

[0141] For example, the partition walls 25A, 25B, 25C, and 25D may be formed between [step-510] and [step-520], or between [step-520] and [step-530], or the partition wall 24 may be formed between [step-540] and [step-550], or the partition wall 24 may be formed between [step-570] and [step-580], or the partition wall 24 may be formed between [step-580] and [step-590].

[0142] In the light-emitting element of Example 5, the base surface is uneven and differentiable, so that when a strong external force is applied to the light-emitting element for some reason, the problem of stress concentration on the rising part of the convex part can be reliably avoided, and there is no risk of damage to the first compound semiconductor layer, etc. In particular, in the light-emitting element array, bumps are used to connect and bond to an external circuit, etc., and a large load (for example, about 50 MPa) needs to be applied to the light-emitting element array during bonding. In the light-emitting element array of Example 5, even if such a large load is applied, there is no risk of damage to the light-emitting element array. In addition, because the base surface is uneven, the generation of stray light is further suppressed, and the generation of optical crosstalk between the light-emitting elements can be more reliably prevented.

[0143] When emitting elements are arranged in a light-emitting element array, the footprint diameter of the first sacrificial layer cannot exceed the formation pitch of the light-emitting elements. Therefore, in order to narrow the formation pitch of the light-emitting element array, it is necessary to reduce the footprint diameter. Incidentally, the radius of curvature R1 of the center of the first portion of the base surface is positively correlated with the footprint diameter. In other words, when the footprint diameter becomes smaller with the narrow formation pitch, the radius of curvature R1 tends to become smaller as a result. For example, a radius of curvature R1 of about 30 μm for a footprint diameter of 24 μm has been reported. In addition, the radiation angle of light emitted from the light-emitting element is negatively correlated with the footprint diameter. In other words, when the footprint diameter becomes smaller with the narrow formation pitch, the radius of curvature R1 becomes smaller as a result, and the FFP (Far Field Pattern) tends to expand. With a radius of curvature R1 of less than 30 μm, the radiation angle may be several degrees or more. Depending on the application field of the light-emitting element array, a narrow radiation angle of 2 to 3 degrees or less may be required for the light emitted from the light-emitting element.

[0144] In the fifth embodiment, since the first portion is formed on the base surface based on the first sacrificial layer and the second sacrificial layer, a large radius of curvature R1 can be achieved even when the light emitting elements are arranged at a narrow pitch. Therefore, it is possible to make the radiation angle of the light emitted from the light emitting element narrower than 2 to 3 degrees, or as narrow as possible, and it is possible to provide a light emitting element having a narrow FFP and to increase the light output and improve the efficiency of the light emitting element.

[0145] Furthermore, since the height (thickness) of the first portion can be made low (thin), when the light-emitting element array is connected / bonded to an external circuit, etc. using bumps, cavities (voids) are less likely to occur in the bumps, thereby improving thermal conductivity.

[0146] In addition, in the light-emitting devices of Examples 1 to 24, the first light reflecting layer also functions as a concave mirror, so that the light diffracts and spreads from the active layer as a starting point, and the light incident on the first light reflecting layer can be reliably reflected toward the active layer and focused on the active layer. Therefore, it is possible to avoid an increase in diffraction loss, and laser oscillation can be reliably performed, and the problem of thermal saturation can be avoided because of the long resonator. In addition, since the resonator length can be increased, the tolerance of the manufacturing process of the light-emitting device is increased, and the yield can be improved. Incidentally, the "diffraction loss" generally refers to a phenomenon in which light tends to spread due to the diffraction effect, and the laser light traveling back and forth through the resonator gradually dissipates outside the resonator.

[0147] In addition, except for Example 7 described later, in the manufacturing process of the light-emitting device, a GaN substrate is used, but a GaN-based compound semiconductor is not formed based on a method of lateral epitaxial growth such as the ELO method. Therefore, as the GaN substrate, not only a polar GaN substrate but also a semi-polar GaN substrate or a non-polar GaN substrate can be used. When a polar GaN substrate is used, the light emission efficiency tends to decrease due to the effect of the piezoelectric field in the active layer, but if a non-polar GaN substrate or a semi-polar GaN substrate is used, it is possible to solve or alleviate such a problem. EXAMPLES

[0148] Example 6 is a modification of Example 5, and relates to a light-emitting element having a 1-B configuration. A schematic partial end view of a light-emitting element 10D of Example 6 is shown in FIG. 35, and a schematic partial end view of a light-emitting element array of Example 6 is shown in FIG. 36. In addition, schematic plan views of the arrangement of the first and second parts of the base surface in the light-emitting element array of Example 6 are shown in FIG. 37 and FIG. 39, and schematic plan views of the arrangement of the first light reflecting layer and the first electrode in the light-emitting element array of Example 6 are shown in FIG. 38 and FIG. 40. Furthermore, schematic partial end views of the first compound semiconductor layer and the like for explaining the manufacturing method of the light-emitting element array of Example 6 are shown in FIG. 41A, FIG. 41B, FIG. 42A, FIG. 42B, FIG. 43A, and FIG. 43B.

[0149] In the light emitting device 10D of Example 6, when the second surface 21b of the first compound semiconductor layer 21 is used as a reference, the second portion 92 of the base surface 90 occupying the peripheral region 99 has a downwardly convex shape toward the center of the peripheral region 99 and an upwardly convex shape extending from the downwardly convex shape. c LL1 is a distance from the second surface 21b of the first compound semiconductor layer 21 to the center 92 of the second portion 92 of the base surface 90. c When the distance to is LL2, LL2>LL1 In addition, the central portion 91 of the first portion 91 of the base surface 90 c The radius of curvature of the first light reflecting layer 41 (i.e., the radius of curvature of the first light reflecting layer 41) is R1, and the radius of curvature of the second portion 92 of the base surface 90 is R2. c When the radius of curvature is R2, R1>R2 The value of LL2 / LL1 is not limited to the following: 1 <LL2 / LL1≦100 The value of R1 / R2 can be, but is not limited to, 1 <R1 / R2≦100 Specifically, for example, LL2 / LL1=1.05 R1 / R2=10 It is.

[0150] In the light emitting device 10D of the sixth embodiment, the central portion 91 of the first portion 91 of the base surface 90 c are located on the vertices (intersections) of a square grid (see FIG. 37), in this case the central portion 92 of the second portion 92 of the base surface 90. c 37) are located on the vertices of a square grid. Alternatively, the central portion 91 of the first portion 91 of the base surface 90 c are located on the vertices (intersections) of a lattice of equilateral triangles (see FIG. 39 ), and in this case, the central portion 92 of the second portion 92 of the base surface 90 c 39) are located on the vertices of a lattice of equilateral triangles. Also, the second portion 92 of the base surface 90 occupying the peripheral region 99 has a downwardly convex shape toward the center of the peripheral region 99. In FIGS. 37 and 39, this region is denoted by reference numeral 92. b As shown in Fig.

[0151] In the light-emitting element 10D of Example 6, the shape of [the first portion 91 / the second portion 92 from the peripheral portion to the center portion] is (A) [Upward convex shape / downward convex shape followed by upward convex shape] (B) [Upward convex shape / upward convex shape continues to downward convex shape to upward convex shape] (C) [Upward convex shape / line segment leads to downward convex shape, then to upward convex shape] There are cases like the above, but the light-emitting element 10D of Example 6 specifically corresponds to case (A).

[0152] In the light emitting device 10D of Example 6, a bump 35 is provided on a portion of the second compound semiconductor layer 22 facing the convex portion of the second portion 92 of the base surface 90 on the second surface side.

[0153] As shown in Fig. 35, the second electrode 32 is common to the light-emitting elements 10D constituting the light-emitting element array, or, as shown in Fig. 36, is formed individually and is connected to an external circuit or the like via a bump 35. The first electrode 31 is common to the light-emitting elements 10D constituting the light-emitting element array, and is connected to an external circuit or the like via a first pad electrode (not shown). The bump 35 is formed by bonding a convex portion 92 in a second portion 92 of the base surface 90 to the light-emitting element 10D. c 35, 36A, and 36B, light may be emitted to the outside via the first light reflecting layer 41, or light may be emitted to the outside via the second light reflecting layer 42. Examples of the shape of the bump 35 include a cylindrical shape, an annular shape, and a hemispherical shape.

[0154] Also, the central portion 92 of the second portion 92 of the base surface 90 c The radius of curvature R2 is 1×10 -6 m or more, preferably 3×10 -6 m or more, preferably 5×10 -6 m or more. Specifically, Radius of curvature R2=3μm It is.

[0155] In the light-emitting element array of Example 6 shown in Figures 37 and 38, as well as Figures 39 and 40, the parameters of the light-emitting element 10D are as shown in Table 4 below. The specifications of the light-emitting element 10D of Example 6 shown in Figures 37 and 38, as well as Figures 39 and 40 are shown in Tables 5 and 6 below. Here, the height H1 of the first portion 91 is the distance from the second surface 21b of the first compound semiconductor layer 21 to the central portion 91 of the first portion 91 on the base surface 90. c LL1 is a distance from the second surface 21b of the first compound semiconductor layer 21 to the deepest recessed portion 92 of the second portion 92 of the base surface 90. b When the distance to the H1=LL1-LL2” and the center 92 of the second portion 92 c The height H2 of H2=LL2-LL2” It is expressed as:

[0156] See Figures 37 and 38. See Figures 39 and 40. Formation pitch 25μm 25μm Radius of curvature R1150μm 150μm Diameter D120μm 20μm Height H12μm 2μm Radius of curvature R22μm 2μm Height H22.5μm 2.5μm

[0157] See Figures 37 and 38 Second light reflecting layer 42 SiO2 / Ta2O5 (11.5 pairs) Second electrode 32 ITO (thickness: 30 nm) Second compound semiconductor layer 22 p-GaN Active layer 23 InGaN (multiple quantum well structure) First compound semiconductor layer 21 n-GaN First light reflecting layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length L OR 25μm Oscillation wavelength (emission wavelength) λ0445nm Number of light emitting elements: 100 x 100

[0158] See Figures 39 and 40 Second light reflecting layer 42 SiO2 / Ta2O5 (11.5 pairs) Second electrode 32 ITO (thickness: 30 nm) Second compound semiconductor layer 22 p-GaN Active layer 23 InGaN (multiple quantum well structure) First compound semiconductor layer 21 n-GaN First light reflecting layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length L OR 25μm Oscillation wavelength (emission wavelength) λ0445nm Number of light emitting elements: 100 x 100

[0159] 41A, 41B, 42A, 42B, 43A, and 43B are schematic partial end views of the first compound semiconductor layer and the like for explaining the manufacturing method of the light-emitting element array of Example 6. However, since the manufacturing method of the light-emitting element array of Example 6 can be substantially the same as the manufacturing method of the light-emitting element array of Example 5, detailed description will be omitted. Note that reference numeral 83 in FIG. 41A and reference numeral 83' in FIG. 41B and FIG. 42A indicate the central portion 92 of the second portion 92. c 1 shows a portion of the first sacrificial layer for forming the first sacrificial layer. Note that as the size (diameter) of the first sacrificial layer becomes smaller, the height of the first sacrificial layer after the heat treatment becomes higher.

[0160] In the light-emitting element array of Example 6 or Example 7 described later, when connecting and bonding to an external circuit or the like using the bumps 35, a large load (for example, about 50 MPa) needs to be applied to the light-emitting element array during bonding. In the light-emitting element array of Example 6, even if such a large load is applied, the bumps 35 and the convex portion 92 of the second portion 92 of the base surface 90 can be easily bonded to each other. c Since the light emitting element array is aligned in a vertical direction, it is possible to reliably prevent damage to the light emitting element array. EXAMPLES

[0161] Example 7 is also a modification of Example 5 or Example 6, and relates to a light-emitting element of 1-C configuration. Schematic partial end views of the light-emitting element array of Example 7 are shown in Fig. 44 and Fig. 45, and a schematic plan view of the arrangement of the first and second parts of the base surface in the light-emitting element array of Example 7 is shown in Fig. 46. In the example shown in Fig. 44, the second electrode 32 is formed individually for each light-emitting element, and in the example shown in Fig. 45, the second electrode 32 is formed in common for each light-emitting element. Also, in Figs. 44 and 45, the first electrode is omitted from illustration.

[0162] In the light-emitting element 10E of Example 7, when the second surface 21b of the first compound semiconductor layer 21 is used as a reference, the second portion 92 of the base surface 90 occupying the peripheral region 99 has an annular convex shape 93 that surrounds the first portion 91 of the base surface 90, and a downwardly convex shape 94A that extends from the annular convex shape 93 toward the first portion 91 of the base surface 90. In the second portion 92 of the base surface 90 occupying the peripheral region 99, the region surrounded by the annular convex shape 93 is indicated by reference number 94B.

[0163] In the light emitting device 10E of Example 7, the first compound semiconductor layer 21 is formed on the second surface 21b of the first compound semiconductor layer 21. c is a distance from the second surface 21b of the first compound semiconductor layer 21 to the apex of the annular convex shape 93 of the second portion 92 of the base surface 90, LL2'>LL1 In addition, the central portion 91 of the first portion 91 of the base surface 90 c (i.e., the radius of curvature of the first light reflecting layer 41) is R1, and the radius of curvature of the apex of the annular convex shape 93 of the second portion 92 of the base surface 90 is R2′. R1>R2' The value of LL2' / LL1 is not limited to the following: 1 <LL2’ / LL1≦100 Specifically, for example, LL2' / LL1=1.1 In addition, the value of R1 / R2' is not limited to the following: 1 <R1 / R2’≦100 Specifically, for example, R1 / R2'=50 It is.

[0164] In the light emitting element 10E of Example 7, the shape of [the first portion 91 / the second portion 92 from the peripheral portion to the center portion] is (A) [From an upward convex shape / downward convex shape to an upward convex shape / downward convex shape] (B) [Continuing from an upward convex shape / downward convex shape to an upward convex shape, a downward convex shape, and a line segment] (C) [Continuing from an upward convex shape / upward convex shape to a downward convex shape, an upward convex shape, and a downward convex shape] (D) [Upwardly convex shape / upwardly convex shape to downwardly convex shape to upwardly convex shape to downwardly convex shape, followed by a line segment] (E) [Upward convex shape / Continuing from a line segment to a downward convex shape, an upward convex shape, and a downward convex shape] (F) [Upward convex shape / Continuing from a line segment to a downward convex shape, an upward convex shape, a downward convex shape, and a line segment] There are cases like the above, but the light emitting element 10E of Example 7 specifically corresponds to case (A).

[0165] In the light emitting device 10E of Example 7, a bump 35 is disposed on a portion of the second surface side of the second compound semiconductor layer 22 that faces the portion of the annular convex shape 93 in the second portion 92 of the base surface 90. The bump 35 is preferably in a ring shape that faces the annular convex shape 93. Examples of the shape of the bump 35 include a cylindrical shape, an annular shape, and a hemispherical shape. The bump 35 is disposed on the portion of the convex shape 92 in the second portion 92 of the base surface 90. c The second compound semiconductor layer 22 is formed in a portion on the second surface side thereof facing the first compound semiconductor layer 22.

[0166] As shown in FIG. 44, the second electrode 32 is formed individually in the light emitting element 10E constituting the light emitting element array, and is connected to an external circuit or the like via a bump 35. The first electrode 31 is common to the light emitting element 10E constituting the light emitting element array, and is connected to an external circuit or the like via a first pad electrode (not shown). Alternatively, as shown in FIG. 45, the second electrode 32 is common to the light emitting element 10E constituting the light emitting element array, and is connected to an external circuit or the like via a bump 35. The first electrode 31 is common to the light emitting element 10E constituting the light emitting element array, and is connected to an external circuit or the like via a first pad electrode (not shown). In the light emitting element 10E shown in FIG. 44 and FIG. 45, light may be emitted to the outside via the first light reflecting layer 41, or light may be emitted to the outside via the second light reflecting layer 42.

[0167] The radius of curvature R2' of the annular convex shape 93 of the second portion 92 of the base surface 90 is 1×10 -6 m or more, preferably 3×10 -6 m or more, preferably 5×10 -6 m or more. Specifically, Radius of curvature R2'=5μm It is.

[0168] In the light-emitting element array of Example 7 shown in Fig. 46, the parameters of the light-emitting element 10E are as shown in Table 7 below. The specifications of the light-emitting element 10E of Example 7 shown in Fig. 46 are shown in Table 8 below. Here, the height H1 of the first portion 91 is the distance from the second surface 21b of the first compound semiconductor layer 21 to the central portion 91 of the first portion 91 on the base surface 90. c LL1 is a distance from the second surface 21b of the first compound semiconductor layer 21 to the deepest recessed portion 92 of the second portion 92 of the base surface 90. b When the distance to the H1=LL1-LL2” and the height H2 of the annular convex shape 93 of the second portion 92 is represented by H2=LL2-LL2” In addition, the diameter D2 indicates the diameter of the annular convex shape 93.

[0169] See Figure 46 Formation pitch: 25μm Curvature radius R1150μm Diameter D115μm Height H12μm Curvature radius R23μm Diameter D219μm (inner diameter 18μm / outer diameter 20μm) Height H23μm

[0170] Table 8 See Figure 46 Second light reflective layer 42 SiO2 / Ta2O5 (7 pairs) Second electrode 32 ITO (thickness: 25 nm) Second compound semiconductor layer 22 p-GaN Active layer 23 InGaN (multiple quantum well structure) First compound semiconductor layer 21 n-GaN First light reflecting layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length L OR 20μm Oscillation wavelength (emission wavelength) λ0405nm Number of light emitting elements: 1000 x 1000

[0171] The manufacturing method of the light-emitting element array of the seventh embodiment can be substantially the same as the manufacturing method of the light-emitting element array of the fifth embodiment or the sixth embodiment, so a detailed description thereof will be omitted. EXAMPLES

[0172] Example 8 is a modification of Example 5. FIGS. 47A and 47B are schematic plan views showing the arrangement of the first and second parts of the base surface in the light-emitting element array of Example 8. In the example shown in FIG. 47A, the light-emitting element array has, for example, the light-emitting elements of Example 5 arranged in a row. The schematic partial end view along the arrow AA in FIG. 47A is similar to that shown in FIG. 23. In the example shown in FIG. 47B, the light-emitting element array has, for example, light-emitting elements whose planar shape is longer and thinner than the light-emitting elements of Example 5 arranged in a row. The schematic partial end view along the arrow AA in FIG. 47B is similar to that shown in FIG. 23. In the light-emitting element array of Example 8 shown in FIG. 47A, the parameters of the light-emitting elements are as shown in Table 9 below, and the specifications of the light-emitting elements are as shown in Table 10 below. In addition, in the light-emitting element array of Example 8 shown in FIG. 47B, the parameters of the light-emitting elements are as shown in Table 11 below, and the specifications of the light-emitting elements are as shown in Table 12 below. The shape of the base surface shown in FIG. 47B is a part of a cylindrical shape or a part of a semi-cylindrical shape.

[0173] See Figure 47A Formation pitch: 25μm Curvature radius R1100μm Diameter D120μm Height H12μm

[0174] Table 10 See Figure 47A Second light reflecting layer 42 SiO2 / Ta2O5 (11.5 pairs) Second electrode 32 ITO (thickness: 22 nm) Second compound semiconductor layer 22 p-GaN Active layer 23 InGaN (multiple quantum well structure) First compound semiconductor layer 21 n-GaN First light reflecting layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length L OR 25μm Oscillation wavelength (emission wavelength) λ0445nm Number of light emitting elements: 1000 x 1

[0175] See Figure 47B Formation pitch: 25 μm (pitch along arrow B in FIG. 47B) Radius of curvature R1100μm (radius of curvature in the direction of arrow B in Figure 47B) Size of the first part: length 400μm × width 20μm Height H12μm

[0176] Table 12 See Figure 47B Second light reflecting layer 42 SiO2 / Ta2O5 (11.5 pairs) Second electrode 32 ITO (thickness: 22 nm) Second compound semiconductor layer 22 p-GaN Active layer 23 InGaN (multiple quantum well structure) First compound semiconductor layer 21 n-GaN First light reflecting layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length L OR 25μm Oscillation wavelength (emission wavelength) λ0445nm Number of light emitting elements: 512 x 1 EXAMPLES

[0177] Example 9 is a modification of Examples 5 to 8, and relates to a light-emitting device of a third configuration. In a light-emitting device 10F of Example 9, the schematic partial end view of which is shown in Fig. 48, the compound semiconductor substrate 11 is disposed (remained) between the first surface 21a of the first compound semiconductor layer 21 and the first light reflecting layer 41, and the base surface 90 is composed of the surface (first surface 11a) of the compound semiconductor substrate 11.

[0178] In the light emitting device 10F of Example 9, the compound semiconductor substrate 11 is thinned and mirror-finished in the same process as [Step-540] of Example 5. The surface roughness Ra of the first surface 11a of the compound semiconductor substrate 11 is preferably 10 nm or less. The surface roughness Ra is specified in JIS B-610:2001, and specifically, can be measured based on observation based on AFM or cross-sectional TEM. Thereafter, the first sacrificial layer 81 in [Step-550] of Example 5 is formed on the exposed surface (first surface 11a) of the compound semiconductor substrate 11, and the same processes as those after [Step-550] of Example 5 are performed, and a base surface 90 consisting of a first portion 91 and a second portion is provided on the compound semiconductor substrate 11 instead of the first compound semiconductor layer 21 in Example 5, thereby completing a light emitting device or a light emitting device array.

[0179] Except for the above points, the configuration and structure of the light-emitting device of Example 9 can be similar to the configurations and structures of the light-emitting devices of Examples 5 to 8, and therefore a detailed description thereof will be omitted. EXAMPLES

[0180] Example 10 is also a modification of Examples 5 to 8, and relates to a light-emitting device of the fourth configuration. In a light-emitting device 10G of Example 10, the schematic partial end view of which is shown in FIG. 49, a base material 95 is disposed between the first surface 21a of the first compound semiconductor layer 21 and the first light reflecting layer 41, and the base surface 90 is constituted by the surface of the base material 95. Alternatively, in a modification of the light-emitting device 10G of Example 10, the schematic partial end view of which is shown in FIG. 50, a compound semiconductor substrate 11 and a base material 95 are disposed between the first surface 21a of the first compound semiconductor layer 21 and the first light reflecting layer 41, and the base surface 90 is constituted by the surface of the base material 95. Examples of materials constituting the base material 95 include transparent dielectric materials such as TiO2, Ta2O5, and SiO2, silicone-based resins, and epoxy-based resins.

[0181] In the light-emitting device 10G of Example 10 shown in FIG. 49, in the same step as [Step-540] of Example 5, the compound semiconductor substrate 11 is removed, and a base material 95 having a base surface 90 is formed on the first surface 21a of the first compound semiconductor layer 21. Specifically, for example, a TiO2 layer or a Ta2O5 layer is formed on the first surface 21a of the first compound semiconductor layer 21, and then a patterned resist layer is formed on the TiO2 layer or the Ta2O5 layer on which the first portion 91 is to be formed, and the resist layer is heated to reflow the resist layer, thereby obtaining a resist pattern. The resist pattern is given a shape that is the same as (or a similar shape to) the shape of the first portion. Then, the resist pattern and the TiO2 layer or the Ta2O5 layer are etched back, whereby a base material 95 (made of a TiO2 layer or a Ta2O5 layer) on which the first portion 91 and the second portion 92 are provided can be obtained on the first surface 21a of the first compound semiconductor layer 21. Next, the first light reflecting layer 41 may be formed on the desired area of ​​the substrate 95 based on a known method.

[0182] Alternatively, in the light emitting device 10G of Example 10 shown in FIG. 50, the compound semiconductor substrate 11 is thinned and mirror-finished in the same process as [Step-540] of Example 5, and then a base material 95 having a base surface 90 is formed on the exposed surface (first surface 11a) of the compound semiconductor substrate 11. Specifically, for example, a TiO2 layer or a Ta2O5 layer is formed on the exposed surface (first surface 11a) of the compound semiconductor substrate 11, and then a patterned resist layer is formed on the TiO2 layer or Ta2O5 layer on which the first portion 91 is to be formed, and the resist layer is heated to reflow the resist layer, thereby obtaining a resist pattern. The resist pattern is given the same shape (or a similar shape) as the shape of the first portion. Then, the resist pattern and the TiO2 layer or the Ta2O5 layer are etched back, whereby a base material 95 (made of a TiO2 layer or a Ta2O5 layer) on which the first portion 91 and the second portion 92 are provided can be obtained on the exposed surface (first surface 11a) of the compound semiconductor substrate 11. Next, the first light reflecting layer 41 may be formed on the desired area of ​​the substrate 95 based on a known method.

[0183] Except for the above points, the configuration and structure of the light-emitting device of Example 10 can be similar to the configurations and structures of the light-emitting devices of Examples 5 to 8, and therefore a detailed description thereof will be omitted. EXAMPLES

[0184] Example 11 is a modification of Example 10. A schematic partial end view of the light-emitting element of Example 11 is substantially the same as that of Fig. 50, and the configuration and structure of the light-emitting element of Example 11 can be substantially the same as that of the light-emitting element of Example 10, so detailed description will be omitted.

[0185] In Example 11, first, the second surface 11b of the light-emitting element manufacturing substrate 11 is provided with an uneven surface 96 for forming a base surface 90 (see FIG. 51A). Then, the first light reflecting layer 41 made of a multilayer film is formed on the second surface 11b of the light-emitting element manufacturing substrate 11 (see FIG. 51B), and then a planarizing film 97 is formed on the first light reflecting layer 41 and the second surface 11b, and a planarizing process is performed on the planarizing film 97 (see FIG. 51C).

[0186] Next, a stacked structure 20 is formed on the planarization film 97 of the light-emitting device manufacturing substrate 11 including the first light reflecting layer 41 by lateral growth using a method of lateral epitaxial growth such as the ELO method. Thereafter, [Step-510] and [Step-520] of Example 5 are performed. Then, the light-emitting device manufacturing substrate 11 is removed, and the first electrode 31 is formed on the exposed planarization film 97. Alternatively, the first electrode 31 is formed on the first surface 11a of the light-emitting device manufacturing substrate 11 without removing the light-emitting device manufacturing substrate 11. EXAMPLES

[0187] Example 12 is a modification of Examples 5 to 11. In Examples 5 to 11, the stacked structure 20 is made of a GaN-based compound semiconductor. On the other hand, in Example 12, the stacked structure 20 is made of an InP-based compound semiconductor or a GaAs-based compound semiconductor.

[0188] The parameters of the light-emitting element in the light-emitting element array of Example 12 having the same configuration and structure as that shown in Figures 5 and 7 (however, the stacked structure 20 is made of an InP-based compound semiconductor) are as shown in Table 13 below, and the specifications of the light-emitting element are shown in Tables 14 and 15 below.

[0189] See the layout in Figure 5. See the layout in Figure 7. Formation pitch 25μm 20μm Radius of curvature R1100μm 200μm Diameter D120μm 15μm Height H12μm 2μm Radius of curvature R24μm 5μm

[0190] Table 14: See the layout in Figure 5. Second light reflecting layer 42 SiO2 / Ta2O5 (11.5 pairs) Second electrode 32 ITO (thickness: 22 nm) Second compound semiconductor layer 22 p-InP Active layer 23 InGaAs (multiple quantum well structure), or AlInGaAsP (multiple quantum well structure), or InAs quantum dots First compound semiconductor layer 21 n-InP First light reflecting layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length L OR 25μm Oscillation wavelength (emission wavelength) λ01.6μm Number of light emitting elements: 100 x 100

[0191] Table 15: See the layout in Figure 7 Second light reflecting layer 42 SiO2 / SiN (9 pairs) Second electrode 32 ITO (thickness: 22 nm) Second compound semiconductor layer 22 p-InP Active layer 23 InGaAs (multiple quantum well structure), or AlInGaAsP (multiple quantum well structure), or InAs quantum dots First compound semiconductor layer 21 n-InP First light reflecting layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length L OR 25μm Oscillation wavelength (emission wavelength) λ01.6μm Number of light emitting elements: 1000 x 1000

[0192] Furthermore, the parameters of the light-emitting element in the light-emitting element array of Example 12 having the same configuration and structure as that shown in Figures 5 and 7 (however, the stacked structure 20 is made of a GaAs-based compound semiconductor) are as shown in Table 16 below, and the specifications of the light-emitting element are shown in Tables 17 and 18 below.

[0193] See the layout in Figure 5. See the layout in Figure 7. Formation pitch 25μm 20μm Radius of curvature R1100μm 200μm Diameter D120μm 15μm Height H12μm 2μm Radius of curvature R25μm 10μm

[0194] Table 17: See the layout in Figure 5 Second light reflecting layer 42 SiO2 / Ta2O5 (11.5 pairs) Second electrode 32 ITO (thickness: 22 nm) Second compound semiconductor layer 22 p-GaAs Active layer 23 InGaAs (multiple quantum well structure), or GaInNAs (multiple quantum well structure), or InAs quantum dots First compound semiconductor layer 21 n-GaAs First light reflecting layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length L OR 25μm Oscillation wavelength (emission wavelength) λ00.94μm Number of light emitting elements: 100 x 100

[0195] Table 18: See the layout in Figure 7 Second light reflecting layer 42 SiO2 / SiN (9 pairs) Second electrode 32 ITO (thickness: 22 nm) Second compound semiconductor layer 22 p-GaAs Active layer 23 InGaAs (multiple quantum well structure), or GaInNAs (multiple quantum well structure), or InAs quantum dots First compound semiconductor layer 21 n-GaAs First light reflecting layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length L OR 25μm Oscillation wavelength (emission wavelength) λ00.94μm Number of light emitting elements: 1000 x 1000

[0196] The parameters of the light-emitting element in the light-emitting element array of Example 12 having the same configuration and structure as shown in Figures 37 and 38, and Figures 39 and 40 (however, the stacked structure 20 is made of an InP-based compound semiconductor) are as shown in Table 19 below, and the specifications of the light-emitting element are shown in Tables 20 and 21 below.

[0197] See Figures 37 and 38. See Figures 39 and 40. Formation pitch 25μm 25μm Radius of curvature R1150μm 150μm Diameter D120μm 20μm Height H12μm 2μm Radius of curvature R22μm 8μm Height H22.5μm 2.5μm

[0198] See Figures 37 and 38 Second light reflecting layer 42 SiO2 / Ta2O5 (11.5 pairs) Second electrode 32 ITO (thickness: 30 nm) Second compound semiconductor layer 22 p-InP Active layer 23 InGaAs (multiple quantum well structure), or AlInGaAsP (multiple quantum well structure), or InAs quantum dots First compound semiconductor layer 21 n-InP First light reflecting layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length L OR 25μm Oscillation wavelength (emission wavelength) λ01.6μm Number of light emitting elements: 100 x 100

[0199] See Figures 39 and 40 Second light reflecting layer 42 SiO2 / Ta2O5 (11.5 pairs) Second electrode 32 ITO (thickness: 30 nm) Second compound semiconductor layer 22 p-InP Active layer 23 InGaAs (multiple quantum well structure), or AlInGaAsP (multiple quantum well structure), or InAs quantum dots First compound semiconductor layer 21 n-InP First light reflecting layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length L OR 25μm Oscillation wavelength (emission wavelength) λ01.6μm Number of light emitting elements: 100 x 100

[0200] The parameters of the light-emitting element in the light-emitting element array of Example 12 having the same configuration and structure as shown in Figures 37 and 38, and Figures 39 and 40 (however, the stacked structure 20 is made of a GaAs-based compound semiconductor) are as shown in Table 22 below, and the specifications of the light-emitting element are shown in Tables 23 and 24 below.

[0201] See Figures 37 and 38. See Figures 39 and 40. Formation pitch 25μm 25μm Radius of curvature R1150μm 150μm Diameter D120μm 20μm Height H12μm 2μm Radius of curvature R26μm 4μm Height H22.5μm 2.5μm

[0202] See Figures 37 and 38 Second light reflecting layer 42 SiO2 / Ta2O5 (11.5 pairs) Second electrode 32 ITO (thickness: 30 nm) Second compound semiconductor layer 22 p-GaAs Active layer 23 InGaAs (multiple quantum well structure), or GaInNAs (multiple quantum well structure), or InAs quantum dots First compound semiconductor layer 21 n-GaAs First light reflecting layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length LOR 25μm Oscillation wavelength (emission wavelength) λ00.94μm Number of light emitting elements: 100 x 100

[0203] See Figures 39 and 40 Second light reflecting layer 42 SiO2 / Ta2O5 (11.5 pairs) Second electrode 32 ITO (thickness: 30 nm) Second compound semiconductor layer 22 p-GaAs Active layer 23 InGaAs (multiple quantum well structure), or GaInNAs (multiple quantum well structure), or InAs quantum dots First compound semiconductor layer 21 n-GaAs First light reflecting layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length L OR 25μm Oscillation wavelength (emission wavelength) λ00.94μm Number of light emitting elements: 100 x 100

[0204] The parameters of the light-emitting element in the light-emitting element array of Example 12 having the same configuration and structure as shown in Figure 46 (however, the stacked structure 20 is made of an InP-based compound semiconductor) are as shown in Table 25 below, and the specifications of the light-emitting element are shown in Table 26 below.

[0205] See Figure 46 Formation pitch: 25μm Curvature radius R1150μm Diameter D115μm Height H12μm Curvature radius R23μm Diameter D219μm (inner diameter 18μm / outer diameter 20μm) Height H23μm

[0206] See Figure 46 Second light reflective layer 42 SiO2 / Ta2O5 (7 pairs) Second electrode 32 ITO (thickness: 25 nm) Second compound semiconductor layer 22 p-InP Active layer 23 InGaAs (multiple quantum well structure), or AlInGaAsP (multiple quantum well structure), or InAs quantum dots First compound semiconductor layer 21 n-InP First light reflecting layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length L OR 20μm Oscillation wavelength (emission wavelength) λ01.6μm Number of light emitting elements: 1000 x 1000

[0207] The parameters of the light-emitting element in the light-emitting element array of Example 12 having the same configuration and structure as that shown in Figure 46 (however, the stacked structure 20 is made of a GaAs-based compound semiconductor) are as shown in Table 27 below, and the specifications of the light-emitting element are shown in Table 28 below.

[0208] See Figure 46 Formation pitch: 25μm Curvature radius R1150μm Diameter D115μm Height H12μm Curvature radius R23μm Diameter D219μm (inner diameter 18μm / outer diameter 20μm) Height H23μm

[0209] Table 28 See Figure 46 Second light reflective layer 42 SiO2 / Ta2O5 (7 pairs) Second electrode 32 ITO (thickness: 25 nm) Second compound semiconductor layer 22 p-GaAs Active layer 23 InGaAs (multiple quantum well structure), or GaInNAs (multiple quantum well structure), or InAs quantum dots First compound semiconductor layer 21 n-GaAs First light reflecting layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length L OR 20μm Oscillation wavelength (emission wavelength) λ00.94μm Number of light emitting elements: 1000 x 1000

[0210] The parameters of the light-emitting element in the light-emitting element array of Example 12 having the same configuration and structure as shown in Figures 47A and 47B (however, the stacked structure 20 is made of an InP-based compound semiconductor) are as shown in Tables 29 and 31 below, and the specifications of the light-emitting element are shown in Tables 30 and 32 below.

[0211] See Figure 47A Formation pitch: 25μm Curvature radius R1100μm Diameter D120μm Height H12μm

[0212] Table 30 See Figure 47A Second light reflecting layer 42 SiO2 / Ta2O5 (11.5 pairs) Second electrode 32 ITO (thickness: 22 nm) Second compound semiconductor layer 22 p-InP Active layer 23 InGaAs (multiple quantum well structure) First compound semiconductor layer 21 n-InP First light reflecting layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length L OR 25μm Oscillation wavelength (emission wavelength) λ01.6μm Number of light emitting elements: 1000 x 1

[0213] See Figure 47B Formation pitch: 25 μm (pitch along arrow B in FIG. 47B) Radius of curvature R1100μm (radius of curvature in the direction of arrow B in Figure 47B) Size of the first part: length 400μm × width 20μm Height H12μm

[0214] Table 32 See Figure 47B Second light reflecting layer 42 SiO2 / Ta2O5 (11.5 pairs) Second electrode 32 ITO (thickness: 22 nm) Second compound semiconductor layer 22 p-InP Active layer 23 InGaAs (multiple quantum well structure), or AlInGaAsP (multiple quantum well structure), or InAs quantum dots First compound semiconductor layer 21 n-InP First light reflecting layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length L OR 25μm Oscillation wavelength (emission wavelength) λ01.6μm Number of light emitting elements: 512 x 1

[0215] The parameters of the light-emitting element in the light-emitting element array of Example 12 having the same configuration and structure as shown in Figures 47A and 47B (however, the stacked structure 20 is made of GaAs-based compound semiconductors) are as shown in Tables 33 and 35 below, and the specifications of the light-emitting element are shown in Tables 34 and 36 below.

[0216] See Figure 47A Formation pitch: 25μm Curvature radius R1100μm Diameter D120μm Height H12μm

[0217] Table 34 See Figure 47A Second light reflecting layer 42 SiO2 / Ta2O5 (11.5 pairs) Second electrode 32 ITO (thickness: 22 nm) Second compound semiconductor layer 22 p-GaAs Active layer 23 InGaAs (multiple quantum well structure), or GaInNAs (multiple quantum well structure), or InAs quantum dots First compound semiconductor layer 21 n-GaAs First light reflecting layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length L OR 25μm Oscillation wavelength (emission wavelength) λ00.94μm Number of light emitting elements: 1000 x 1

[0218] See Figure 47B Formation pitch: 25 μm (pitch along arrow B in FIG. 47B) Radius of curvature R1100μm (radius of curvature in the direction of arrow B in Figure 47B) Size of the first part: length 400μm × width 20μm Height H12μm

[0219] Table 36 See Figure 47B Second light reflecting layer 42 SiO2 / Ta2O5 (11.5 pairs) Second electrode 32 ITO (thickness: 22 nm) Second compound semiconductor layer 22 p-GaAs Active layer 23 InGaAs (multiple quantum well structure), or GaInNAs (multiple quantum well structure), or InAs quantum dots First compound semiconductor layer 21 n-GaAs First light reflecting layer 41 SiO2 / Ta2O5 (14 pairs) Resonator length L OR 25μm Oscillation wavelength (emission wavelength) λ00.94μm Number of light emitting elements: 512 x 1 EXAMPLES

[0220] Example 13 is a modification of the manufacturing method for the light-emitting element array according to the second embodiment of the present disclosure.

[0221] [Process-1300] In the manufacturing method of the light-emitting element array of Example 13, after forming the stacked structure 20, the second light reflecting layer 42 is formed on the second surface side of the second compound semiconductor layer 22. Specifically, first, the same steps as [Step-500] to [Step-540] of Example 5 are performed.

[0222] [Process-1310] Next, after forming a first sacrificial layer 81 on the first surface 21a of the first compound semiconductor layer 21, the surface of the first sacrificial layer 81 is made convex (see FIGS. 32A and 32B), and then the first sacrificial layer 81' is etched back, and further, the first compound semiconductor layer 21 is etched back from the first surface 21a toward the inside, thereby forming a convex portion 91' when the second surface 21b of the first compound semiconductor layer 21 is used as a reference. In this way, the structure shown in FIG. 52A can be obtained.

[0223] [Process-1320] Thereafter, a second sacrificial layer 82 is formed on the entire surface (see FIG. 52B), and then the second sacrificial layer 82 is etched back. Furthermore, the first compound semiconductor layer 21 is etched back inward, thereby forming a convex portion in the first portion 91 of the base surface 90 and at least a concave portion in the second portion 92 of the base surface 90 when the second surface 21b of the first compound semiconductor layer 21 is used as a reference (see FIG. 52C).

[0224] If it is necessary to make the radius of curvature R1 of the first portion 91 of the base surface 90 larger, [Step-1320] may be repeated.

[0225] [Process-1330] Thereafter, the same steps as [Step-580] to [Step-590] in the fifth embodiment may be carried out.

[0226] Hereinafter, light-emitting devices of Examples 1 to 13 and various modifications of the light-emitting device according to the second aspect of the present disclosure including the above-mentioned preferred embodiments and configurations will be described, and then Examples 14 to 24 will be described.

[0227] In the light-emitting device according to the second aspect of the present disclosure including the preferred embodiments and configurations described above, the second compound semiconductor layer is provided with a current injection region and a current non-injection region surrounding the current injection region; The shortest distance D from the center of gravity of the current injection area to the boundary between the current injection area and the non-current injection area CI can be configured to satisfy the following formula. Here, for convenience, a light-emitting element having such a configuration will be referred to as a "light-emitting element of the fifth configuration." For the derivation of the following formula, see, for example, H. Kogelnik and T. Li, "Laser Beams and Resonators," Applied Optics / Vol. 5, No. 10 / October 1966. ω0 is also called the beam waist radius.

[0228] D CI ≧ω0 / 2 (1-1) however, ω0 2 ≡(λ0 / π){L OR (R1-L OR )} 1 / 2 (1-2) Where: λ0: the wavelength of the desired light mainly emitted from the light-emitting element (oscillation wavelength) L OR :cavity length R1: radius of curvature of the center of the first portion of the base surface (i.e., radius of curvature of the first light-reflecting layer)

[0229] Here, in the light-emitting device etc. according to the second aspect of the present disclosure, only the first light reflecting layer has a concave mirror shape, but considering the symmetry of the second light reflecting layer with respect to the flat mirror, the resonator can be expanded to a Fabry-Perot resonator sandwiched between two concave mirror parts having the same radius of curvature (see the schematic diagram of FIG. 64). In this case, the resonator length of a virtual Fabry-Perot resonator is the resonator length L OR The value of ω0 and the resonator length L OR Graphs showing the relationship between the value of and the value of the radius of curvature R1 of the first light reflecting layer are shown in Figs. 65 and 66. Note that in Figs. 65 and 66, the radius of curvature R1 is referred to as "R DBR". A "positive" value of ω0 indicates that the laser light is in the state shown in FIG. 67A, and a "negative" value of ω0 indicates that the laser light is in the state shown in FIG. 67B. The state of the laser light may be the state shown in FIG. 67A or the state shown in FIG. 67B. However, in a virtual Fabry-Perot resonator having two concave mirror portions, the radius of curvature R1 is equal to the resonator length L OR If the radius of curvature R1 is smaller than the cavity length L, the state shown in FIG. 67B will occur, and the confinement will be excessive, resulting in diffraction loss. O R It is preferable that the active layer is in the state shown in FIG. 67A, which is larger than the above. If the active layer is disposed closer to the flatter light reflecting layer of the two light reflecting layers, specifically the second light reflecting layer, the light field is more concentrated in the active layer. That is, the light field confinement in the active layer is strengthened, and laser oscillation is facilitated. The position of the active layer, that is, the distance from the surface of the second light reflecting layer facing the second compound semiconductor layer to the active layer, is not limited, but can be exemplified as λ0 / 2 to 10λ0.

[0230] However, if the region where the light reflected by the first optical reflection layer is focused is not included in the current injection region corresponding to the region where the active layer has gain due to current injection, stimulated emission of light from carriers may be inhibited, and laser oscillation may be inhibited. By satisfying the above formulas (1-1) and (1-2), it is possible to ensure that the region where the light reflected by the first optical reflection layer is focused is included in the current injection region, and laser oscillation can be reliably achieved.

[0231] The light-emitting element of the fifth configuration is a mode loss action portion provided on the second surface of the second compound semiconductor layer and constituting a mode loss action region acting to increase or decrease the oscillation mode loss; a second electrode formed on the second surface of the second compound semiconductor layer and on the mode loss active portion; and a first electrode electrically connected to the first compound semiconductor layer; It further comprises: The second light reflective layer is formed on the second electrode, the laminated structure includes a current injection region, a non-current injection inner region surrounding the current injection region, and a non-current injection outer region surrounding the non-current injection inner region; The orthogonal projection image of the mode loss region and the orthogonal projection image of the current non-injection outer region can be configured to overlap each other.

[0232] In the light-emitting element of the fifth configuration including such a preferable configuration, the radius r1 (=D1 / 2) of the light reflection effective area of ​​the first light reflection layer can be configured to satisfy ω0≦r1≦20·ω0, preferably ω0≦r1≦10·ω0. Alternatively, the value of r1 can be set to r1≦1×10 -4 m, preferably, r1≦5×10 -5 m can be exemplified. In addition, the height of the base surface (the thickness or height of the first portion of the base surface) h1 is h1≦5×10 -5 Further, in the light-emitting device of the fifth configuration including such a preferable configuration, D CI Furthermore, in the light-emitting device of the fifth configuration including such a preferable configuration, R1≦1×10 -3 m, preferably 1 x 10 -5 m ≤ R1 ≤ 1 × 10 -3 m, more preferably 1×10 -5 m ≤ R1 ≤ 1 × 10 -4 It is possible to provide a configuration that satisfies m.

[0233] The light-emitting device according to the second aspect of the present disclosure, including the above-mentioned preferred embodiments and configurations, further comprises: a mode loss action portion provided on the second surface of the second compound semiconductor layer and constituting a mode loss action region acting to increase or decrease the oscillation mode loss; a second electrode formed on the second surface of the second compound semiconductor layer and on the mode loss active portion; and a first electrode electrically connected to the first compound semiconductor layer; It further comprises: The second light reflective layer is formed on the second electrode, the laminated structure includes a current injection region, a non-current injection inner region surrounding the current injection region, and a non-current injection outer region surrounding the non-current injection inner region; The orthogonal projection image of the mode loss effect region and the orthogonal projection image of the current non-injection outer region can be configured to overlap each other. Here, for convenience, a light-emitting device having such a configuration is called a "light-emitting device of the sixth configuration."

[0234] Alternatively, the light-emitting device etc. according to the second aspect of the present disclosure including the above-mentioned preferred embodiments and configurations may include a second electrode formed on the second surface of the second compound semiconductor layer; a second light-reflecting layer formed on the second electrode; a mode loss effect portion that is provided on the first surface of the first compound semiconductor layer and that constitutes a mode loss effect region that acts to increase or decrease the oscillation mode loss; and a first electrode electrically connected to the first compound semiconductor layer; It further comprises: the first light reflecting layer is formed from on the first surface of the first compound semiconductor layer to on the mode loss active portion, the laminated structure includes a current injection region, a non-current injection inner region surrounding the current injection region, and a non-current injection outer region surrounding the non-current injection inner region; The orthogonal projection image of the mode loss effect region and the orthogonal projection image of the non-current injection outer region can be configured to overlap. Here, for convenience, a light-emitting device having such a configuration is called a "light-emitting device having a seventh configuration." Note that the provisions of the light-emitting device having the seventh configuration can be applied to the light-emitting device having the fifth configuration.

[0235] In the light-emitting device of the sixth configuration or the light-emitting device of the seventh configuration, a current non-injection region (a collective term for a current non-injection inner region and a current non-injection outer region) is formed in the laminated structure, and the current non-injection region may be formed in a region on the second electrode side of the second compound semiconductor layer in the thickness direction, or in the entire second compound semiconductor layer, or in the second compound semiconductor layer and the active layer, or from the second compound semiconductor layer to a part of the first compound semiconductor layer. The orthogonal projection image of the mode loss action region and the orthogonal projection image of the current non-injection outer region overlap, but in a region sufficiently separated from the current injection region, the orthogonal projection image of the mode loss action region and the orthogonal projection image of the current non-injection outer region do not have to overlap.

[0236] In the light emitting device of the sixth configuration, the current non-injection outer region may be configured to be located below the mode loss active region.

[0237] In the light-emitting device having the sixth configuration including the above-described preferable configuration, when the area of ​​the orthogonal projection of the current injection region is S1 and the area of ​​the orthogonal projection of the current non-injected inner region is S2, 0.01≦S1 / (S1+S2)≦0.7 In the light emitting device of the seventh configuration, when the area of ​​the orthogonal projection of the current injection region is S1' and the area of ​​the orthogonal projection of the current non-injected inner region is S2', 0.01≦S1' / (S1'+S2')≦0.7 However, the ranges of S1 / (S1'+S2) and S1' / (S1'+S2') are not limited or restricted to the above ranges.

[0238] In the light-emitting device of the sixth configuration or the seventh configuration including the above-mentioned preferred configuration, the non-current-injection inner region and the non-current-injection outer region can be configured to be formed by ion implantation into the laminated structure. For convenience, the light-emitting device of such a configuration is called a "light-emitting device of the sixth-A configuration" or a "light-emitting device of the seventh-A configuration." In this case, the ion species can be at least one type of ion (i.e., one type of ion or two or more types of ions) selected from the group consisting of boron, proton, phosphorus, arsenic, carbon, nitrogen, fluorine, oxygen, germanium, zinc, and silicon.

[0239] Alternatively, in the light-emitting device of the sixth configuration or the seventh configuration including the above-mentioned preferred configuration, the non-current-injection inner region and the non-current-injection outer region can be formed by plasma irradiation of the second surface of the second compound semiconductor layer, or ashing of the second surface of the second compound semiconductor layer, or reactive ion etching of the second surface of the second compound semiconductor layer. For convenience, the light-emitting device of such a configuration is called the "light-emitting device of the sixth configuration" or the "light-emitting device of the seventh configuration." In these processes, the non-current-injection inner region and the non-current-injection outer region are exposed to plasma particles, so that the conductivity of the second compound semiconductor layer is deteriorated, and the non-current-injection inner region and the non-current-injection outer region become in a high resistance state. That is, the non-current-injection inner region and the non-current-injection outer region can be formed by exposure of the second surface of the second compound semiconductor layer to plasma particles. Specific examples of plasma particles include argon, oxygen, and nitrogen.

[0240] Alternatively, in the light-emitting device of the sixth or seventh configuration including the above-mentioned preferred configuration, the second light-reflecting layer may have a region that reflects or scatters the light from the first light-reflecting layer toward the outside of the resonator structure formed by the first and second light-reflecting layers. Light-emitting devices of such configurations are called "light-emitting devices of the sixth or seventh configuration" for convenience. Specifically, the region of the second light-reflecting layer located above the sidewall of the mode-loss action region (the sidewall of the opening provided in the mode-loss action region) has a forward tapered inclination, or has a region that is curved convexly toward the first light-reflecting layer. Alternatively, in the light-emitting device of the sixth or seventh configuration including the above-mentioned preferred configuration, the first light-reflecting layer may have a region that reflects or scatters the light from the second light-reflecting layer toward the outside of the resonator structure formed by the first and second light-reflecting layers. Specifically, a part of the first light reflecting layer may have a forward tapered inclination or a convex curved portion toward the second light reflecting layer, or a region of the first light reflecting layer located above the sidewall of the mode loss action region (the sidewall of the opening provided in the mode loss action region) may have a forward tapered inclination or a region curved toward the second light reflecting layer. Also, the light may be scattered toward the outside of the resonator structure formed by the first light reflecting layer and the second light reflecting layer by scattering the light at the boundary (sidewall edge portion) between the top surface of the mode loss action region and the sidewall of the opening provided in the mode loss action region.

[0241] In the light-emitting device having the 6-A configuration, the light-emitting device having the 6-B configuration, or the light-emitting device having the 6-C configuration described above, when the optical distance from the active layer in the current injection region to the second surface of the second compound semiconductor layer is OL2 and the optical distance from the active layer in the mode loss action region to the top surface of the mode loss action portion is OL0, OL0>OL2 In the light emitting device of the 7-A configuration, the light emitting device of the 7-B configuration, or the light emitting device of the 7-C configuration described above, when the optical distance from the active layer in the current injection region to the first surface of the first compound semiconductor layer is OL1' and the optical distance from the active layer in the mode loss action region to the top surface of the mode loss action portion is OL0', OL0'>OL1' Furthermore, in the light-emitting device having the 6-A configuration, the light-emitting device having the 7-A configuration, the light-emitting device having the 6-B configuration, the light-emitting device having the 7-B configuration, the light-emitting device having the 6-C configuration, or the light-emitting device having the 7-C configuration described above, which includes these configurations, the generated light having the higher-order mode can be dissipated by the mode loss action region toward the outside of the resonator structure formed by the first light reflecting layer and the second light reflecting layer, thereby increasing the oscillation mode loss. That is, the optical field intensity of the generated fundamental mode and the higher-order mode decreases as it moves away from the Z-axis in the orthogonal projection image of the mode loss action region due to the presence of the mode loss action region acting to increase or decrease the oscillation mode loss, but the mode loss of the higher-order mode is greater than the decrease in the optical field intensity of the fundamental mode, so that the fundamental mode can be further stabilized, and the mode loss can be suppressed compared to when the current injection inner region does not exist, so that the threshold current can be reduced. For convenience, the axis passing through the center of the resonator formed by the two light reflecting layers (a perpendicular line to the laminated structure passing through the center of the first light reflecting layer) is the Z axis, and the imaginary plane perpendicular to the Z axis is the XY plane.

[0242] In the light-emitting device of the 6-A configuration, the light-emitting device of the 7-A configuration, the light-emitting device of the 6-B configuration, the light-emitting device of the 7-B configuration, the light-emitting device of the 6-C configuration, or the light-emitting device of the 7-C configuration described above, the mode loss active portion can be made of a dielectric material, a metal material, or an alloy material. X , SiN X , AlN X , AlO X , TaO X , ZrO XExamples of the metal material or alloy material include titanium, gold, platinum, and alloys thereof, but are not limited to these materials. The mode loss action part made of these materials can absorb light and increase the mode loss. Alternatively, the mode loss can be controlled by disturbing the phase without directly absorbing light. In this case, the mode loss action part can be made of a dielectric material, and the optical thickness t0 of the mode loss action part can be a value that is outside of an integer multiple of 1 / 4 of the wavelength λ0 of the light generated in the light-emitting element. That is, the phase of the light that circulates in the resonator and forms a standing wave can be disturbed in the mode loss action part to destroy the standing wave and provide a mode loss corresponding to it. Alternatively, the mode loss action part can be made of a dielectric material, and the optical thickness t0 of the mode loss action part (refractive index is n0) can be a value that is an integer multiple of 1 / 4 of the wavelength λ0 of the light generated in the light-emitting element. That is, the optical thickness t0 of the mode loss effect portion can be configured to be a thickness that does not disturb the phase of the light generated in the light emitting element and does not destroy the standing wave. However, it does not have to be a strict integral multiple of 1 / 4. (λ0 / 4n0)×m-(λ0 / 8n0)≦t0≦(λ0 / 4n0)×2m+(λ0 / 8n0) It is sufficient to satisfy the above. Alternatively, by configuring the mode loss action portion to be made of a dielectric material, a metal material, or an alloy material, the phase of light passing through the mode loss action portion can be disturbed or absorbed by the mode loss action portion. By adopting these configurations, the oscillation mode loss can be controlled with a higher degree of freedom, and the degree of freedom in designing the light-emitting device can be increased.

[0243] Alternatively, in the light-emitting device according to a sixth configuration including the above-mentioned preferable configuration, A convex portion is formed on the second surface side of the second compound semiconductor layer, The mode loss action portion can be configured to be formed on a region of the second surface of the second compound semiconductor layer that surrounds the convex portion. For convenience, a light-emitting device configured in this manner is referred to as a "light-emitting device of 6-D configuration." The convex portion occupies the current injection region and the non-current injection inner region. In this case, when the optical distance from the active layer in the current injection region to the second surface of the second compound semiconductor layer is OL2, and the optical distance from the active layer in the mode loss action region to the top surface of the mode loss action portion is OL0, OL0 <OL2 Furthermore, in these cases, the generated light having the higher-order mode can be confined in the current injection region and the non-current injection inner region by the mode loss action region, thereby reducing the oscillation mode loss. That is, the optical field intensity of the generated fundamental mode and higher-order mode increases in the orthogonal projection image of the current injection region and the non-current injection inner region due to the presence of the mode loss action region that acts to increase or decrease the oscillation mode loss. Furthermore, in these cases, the mode loss action portion can be made of a dielectric material, a metal material, or an alloy material. Here, examples of the dielectric material, the metal material, or the alloy material include the various materials described above.

[0244] Alternatively, in the light-emitting device according to a seventh configuration including the above-mentioned preferable configuration, A convex portion is formed on the first surface side of the first compound semiconductor layer, The mode loss action portion is formed on a region of the first surface of the first compound semiconductor layer that surrounds the convex portion, or the mode loss action portion can be configured to be composed of a region of the first compound semiconductor layer that surrounds the convex portion. For convenience, a light-emitting device configured in this manner is called a "light-emitting device of 7-D configuration." The convex portion coincides with the orthogonal projection images of the current injection region and the non-current injection inner region. In this case, when the optical distance from the active layer in the current injection region to the first surface of the first compound semiconductor layer is OL1', and the optical distance from the active layer in the mode loss action region to the top surface of the mode loss action portion is OL0', OL0' <OL1’ In these cases, the generated light having a higher mode can be confined in the current injection region and the current non-injection region by the mode loss effect region, thereby reducing the oscillation mode loss, and in these cases, the mode loss effect portion can be made of a dielectric material, a metal material, or an alloy material. Here, examples of the dielectric material, the metal material, or the alloy material include the various materials described above.

[0245] Furthermore, in the light-emitting device according to the second aspect of the present disclosure including the above-described preferred forms and configurations, the laminated structure including the second electrode may be configured such that at least two light-absorbing material layers are formed parallel to the virtual plane (XY plane) occupied by the active layer. Here, for convenience, the light-emitting device having such a configuration is referred to as the "light-emitting device having the eighth configuration."

[0246] In the light-emitting device of the eighth configuration, it is preferable that at least four light-absorbing material layers are formed.

[0247] In the light-emitting device of the eighth configuration including the above-mentioned preferable configuration, the oscillation wavelength (the wavelength of light mainly emitted from the light-emitting device, which is the desired oscillation wavelength) is λ0, the equivalent refractive index of the entire two light-absorbing material layers and the part of the laminated structure located between the light-absorbing material layers is n eq , the distance between the light absorbing material layers is L Abs When 0.9×{(m λ0) / (2 n eq )}≦L Abs ≦1.1×{(m λ0) / (2 n eq )} Here, m is 1 or any integer equal to or greater than 1. The equivalent refractive index n eq The thickness of each of the two light absorbing material layers and each layer constituting the laminated structure located between the light absorbing material layers is t i , and the refractive index of each is n i When n eq =Σ(ti ×n i ) / Σ(t i ) where i=1, 2, 3, . . . , I, and "I" is the total number of layers constituting the two light absorbing material layers and the part of the laminated structure located between the light absorbing material layers, and "Σ" means taking the sum from i=1 to i=I. The equivalent refractive index n eq can be calculated based on the known refractive index and thickness of each of the constituent materials obtained by observing the cross section of the light emitting element using an electron microscope or the like. When m is 1, the distance between adjacent light absorbing material layers is, for all of the multiple light absorbing material layers, 0.9×{λ0 / (2·n eq )}≦L Abs ≦1.1×{λ0 / (2·n eq )} In addition, when m is an arbitrary integer of 2 or more including 1, for example, if m=1, 2, the distance between adjacent light absorbing material layers in some light absorbing material layers is 0.9×{λ0 / (2·n eq )}≦L Abs ≦1.1×{λ0 / (2·n eq )} and in the remaining light absorbing material layers, the distance between adjacent light absorbing material layers is 0.9×{(2·λ0) / (2·n eq )}≦L Abs ≦1.1×{(2·λ0) / (2·n eq )} Generally, in some light absorbing material layers, the distance between adjacent light absorbing material layers satisfies: 0.9×{λ0 / (2·n eq )}≦L Abs ≦1.1×{λ0 / (2·n eq )} and for the remaining various light absorbing layers, the distance between adjacent light absorbing layers is 0.9×{(m' λ0) / (2 n eq )}≦L Abs ≦1.1×{(m' λ0) / (2 n eq )} Here, m' is any integer equal to or greater than 2. The distance between adjacent light absorbing material layers is the distance between the centers of gravity of adjacent light absorbing material layers. That is, in reality, it is the distance between the centers of the light absorbing material layers when cut along a virtual plane (XZ plane) along the thickness direction of the active layer.

[0248] Furthermore, in the light-emitting device of the eighth configuration including the various preferable configurations described above, the thickness of the light-absorbing material layer is λ0 / (4·n eq The lower limit of the thickness of the light absorbing material layer is preferably 1 nm or less.

[0249] Furthermore, in a light-emitting element having an eighth configuration including the various preferable configurations described above, the light-absorbing material layer can be located in a minimum amplitude portion of a standing wave of light formed inside the laminated structure.

[0250] Furthermore, in a light-emitting device having an eighth configuration including the various preferable configurations described above, the active layer may be located in a maximum amplitude portion of a standing wave of light formed inside the laminated structure.

[0251] Furthermore, in the light-emitting device of an eighth configuration including the various preferable configurations described above, the light-absorbing material layer may be configured to have a light absorption coefficient that is at least twice as high as the light absorption coefficient of the compound semiconductor that constitutes the laminated structure. Here, the light absorption coefficient of the light-absorbing material layer and the light absorption coefficient of the compound semiconductor that constitutes the laminated structure can be obtained by observing the constituent materials through observation of the cross section of the light-emitting device using an electron microscope or the like, and by analogy with known evaluation results observed for each constituent material.

[0252] Furthermore, in the light-emitting device of the eighth configuration including the various preferred configurations described above, the light-absorbing material layer can be configured to be composed of at least one material selected from the group consisting of a compound semiconductor material having a narrower band gap than the compound semiconductor constituting the laminated structure, a compound semiconductor material doped with impurities, a transparent conductive material, and a light-reflecting layer constituent material having light-absorbing properties. Here, for example, when the compound semiconductor constituting the laminated structure is GaN, an example of the compound semiconductor material having a narrower band gap than the compound semiconductor constituting the laminated structure can be InGaN, an example of the compound semiconductor material doped with impurities can be Si-doped n-GaN or B-doped n-GaN, an example of the transparent conductive material can be a transparent conductive material constituting an electrode described later, and an example of the light-reflecting layer constituent material having light-absorbing properties can be a material constituting the light-reflecting layer described later (for example, SiO X , SiN X , TaO X The light absorbing material layers may all be made of one of these materials. Alternatively, each of the light absorbing material layers may be made of various materials selected from these materials, but it is preferable that one light absorbing material layer is made of one material from the viewpoint of simplifying the formation of the light absorbing material layer. The light absorbing material layer may be formed in the first compound semiconductor layer, may be formed in the second compound semiconductor layer, may be formed in the first light reflecting layer, may be formed in the second light reflecting layer, or may be any combination of these. Alternatively, the light absorbing material layer may also be used as an electrode made of a transparent conductive material described later. EXAMPLES

[0253] Example 14 is a modification of Examples 5 to 13, and relates to a light-emitting device having a fifth configuration. As described above, the current confinement region (current injection region 61A and current non-injection region 61B) is defined by the insulating layer 34 having the opening 34A. That is, the current injection region 61A is defined by the opening 34A. That is, in the light-emitting device of Example 14, the second compound semiconductor layer 22 is provided with the current injection region 61A and the current non-injection region 61B surrounding the current injection region 61A, and the shortest distance D from the area center of gravity of the current injection region 61A to the boundary between the current injection region 61A and the current non-injection region 61B is CI satisfies the above-mentioned formula (1-1) and formula (1-2).

[0254] In the light emitting device of Example 14, the radius r1 of the light reflection effective area of ​​the first light reflection layer 41 is ω0≦r1≦20 ω0 Also, D CI ≧ω0. Furthermore, R1≦1×10 -3 m is satisfied. Specifically, D CI = 4 μm ω0=1.5μm L OR = 50 μm R1 = 60 μm λ0=525nm can be exemplified. The diameter of the opening 34A can be 8 μm. The GaN substrate used has a main surface that is a c-plane tilted at about 75 degrees toward the m-axis. That is, the GaN substrate has a {20-21} plane, which is a semi-polar plane, as the main surface. Such a GaN substrate can also be used in other embodiments.

[0255] A misalignment between the central axis (Z-axis) of the first portion 91 of the base surface 90 and the current injection region 61A in the XY plane direction causes the characteristics of the light-emitting device to deteriorate. In many cases, lithography technology is used for both the patterning for forming the first portion 91 and the patterning for forming the opening 34A, but in this case, the positional relationship between the two often shifts in the XY plane depending on the performance of the exposure machine. In particular, the opening 34A (current injection region 61A) is positioned by performing alignment from the second compound semiconductor layer 22 side. On the other hand, the first portion 91 is positioned by performing alignment from the compound semiconductor substrate 11 side. Therefore, in the light-emitting device of Example 14, the opening 34A (current injection region 61) is formed larger than the region where the light is focused by the first portion 91, thereby realizing a structure in which the oscillation characteristics are not affected even if a misalignment occurs between the central axis (Z-axis) of the first portion 91 and the current injection region 61A in the XY plane direction.

[0256] That is, if the region where the light reflected by the first optical reflection layer is focused is not included in the current injection region corresponding to the region where the active layer has gain due to current injection, stimulated emission of light from the carriers is inhibited, and laser oscillation may be inhibited. However, by satisfying the above formulas (1-1) and (1-2), it is possible to ensure that the region where the light reflected by the first optical reflection layer is focused is included in the current injection region, and laser oscillation can be reliably achieved. EXAMPLES

[0257] Example 15 is a modification of Examples 5 to 14, and relates to a light-emitting device having a sixth configuration, specifically, a light-emitting device having a sixth-A configuration. A schematic partial end view of the light-emitting device of Example 15 is shown in FIG.

[0258] In order to control the flow path (current injection region) of the current flowing between the first electrode and the second electrode, a non-current injection region is formed to surround the current injection region. In a GaAs-based surface-emitting laser element (a surface-emitting laser element made of a GaAs-based compound semiconductor), the active layer is oxidized from the outside along the XY plane to form a non-current injection region surrounding the current injection region. The oxidized active layer region (non-current injection region) has a lower refractive index than the non-oxidized region (current injection region). As a result, the optical path length of the resonator (expressed as the product of the refractive index and the physical distance) is shorter in the non-current injection region than in the current injection region. This produces a kind of "lens effect" that confines the laser light in the center of the surface-emitting laser element. In general, light tends to spread due to the diffraction effect, so the laser light traveling back and forth through the resonator gradually dissipates outside the resonator (diffraction loss), causing adverse effects such as an increase in threshold current. However, the lens effect compensates for this diffraction loss, so that an increase in threshold current can be suppressed.

[0259] However, in a light-emitting element made of a GaN-based compound semiconductor, due to the characteristics of the material, it is difficult to oxidize the active layer from the outside (from the lateral direction) along the XY plane. Therefore, as described in Examples 5 to 14, an insulating layer 34 made of SiO2 having an opening is formed on the second compound semiconductor layer 22, a second electrode 32 made of a transparent conductive material is formed from the second compound semiconductor layer 22 exposed at the bottom of the opening 34A to the insulating layer 34, and a second light reflecting layer 42 made of a laminated structure of insulating materials is formed on the second electrode 32. In this way, the insulating layer 34 is formed to form a current non-injection region 61B. Then, the portion of the second compound semiconductor layer 22 located within the opening 34A provided in the insulating layer 34 becomes the current injection region 61A.

[0260] When the insulating layer 34 is formed on the second compound semiconductor layer 22, the cavity length in the region where the insulating layer 34 is formed (current non-injection region 61B) is longer than the cavity length in the region where the insulating layer 34 is not formed (current injection region 61A) by the optical thickness of the insulating layer 34. Therefore, the laser light traveling back and forth through the cavity formed by the two light reflecting layers 41 and 42 of the surface emitting laser element (light emitting element) is diverged and dissipated outside the cavity. For convenience, this effect is called the "inverse lens effect." As a result, an oscillation mode loss occurs in the laser light, and the threshold current increases and the slope efficiency deteriorates. Here, the "oscillation mode loss" is a physical quantity that increases or decreases the optical field intensity of the fundamental mode and higher order modes in the oscillating laser light, and different oscillation mode losses are defined for each mode. Incidentally, the "optical field intensity" is the optical field intensity as a function of the distance L from the Z-axis in the XY plane, and generally, in the fundamental mode, it decreases monotonically as the distance L increases, but in the higher-order mode, it increases and decreases once or several times as the distance L increases before decreasing (see the conceptual diagram in (A) of Figure 55). In Figure 55, the solid line indicates the optical field intensity distribution in the fundamental mode, and the dashed line indicates the optical field intensity distribution in the higher-order mode. In Figure 55, the first light reflecting layer 41 is shown in a flat state for convenience, but in reality it has a concave mirror shape.

[0261] The light-emitting device of Example 15 or the light-emitting devices of Examples 16 to 19 described below are (A) a first compound semiconductor layer 21 having a first surface 21a and a second surface 21b opposite to the first surface 21a; an active layer (light emitting layer) 23 facing the second surface 21b of the first compound semiconductor layer 21; and a second compound semiconductor layer 22 having a first surface 22a facing the active layer 23 and a second surface 22b opposite to the first surface 22a; a laminated structure 20 made of a GaN-based compound semiconductor, (B) a mode loss action portion (mode loss action layer) 54 that is provided on the second surface 22b of the second compound semiconductor layer 22 and that constitutes a mode loss action region 55 that acts to increase or decrease the oscillation mode loss; (C) A second electrode 32 formed from above the second surface 22b of the second compound semiconductor layer 22 to above the mode loss effect portion 54; (D) A second light-reflecting layer 42 formed on the second electrode 32; (E) a first light reflecting layer 41 provided on the first surface side of the first compound semiconductor layer 21; and (F) a first electrode 31 electrically connected to the first compound semiconductor layer 21; It is equipped with:

[0262] The laminated structure 20 is formed with a current injection region 51, a non-current injection inner region 52 surrounding the current injection region 51, and a non-current injection outer region 53 surrounding the non-current injection inner region 52, and the orthogonal projection image of the mode loss action region 55 and the orthogonal projection image of the non-current injection outer region 53 overlap each other. That is, the non-current injection outer region 53 is located below the mode loss action region 55. In addition, in a region sufficiently separated from the current injection region 51 into which the current is injected, the orthogonal projection image of the mode loss action region 55 and the orthogonal projection image of the non-current injection outer region 53 do not need to overlap each other. Here, the laminated structure 20 is formed with the non-current injection regions 52 and 53 into which no current is injected, and in the illustrated example, they are formed in the thickness direction from the second compound semiconductor layer 22 to a part of the first compound semiconductor layer 21. However, the non-current injection regions 52, 53 may be formed in the region on the second electrode side of the second compound semiconductor layer 22 in the thickness direction, or may be formed in the entire second compound semiconductor layer 22, or may be formed in the second compound semiconductor layer 22 and the active layer 23.

[0263] The mode loss action region (mode loss action layer) 54 is made of a dielectric material such as SiO2, and is formed between the second electrode 32 and the second compound semiconductor layer 22 in the light emitting device of Example 15 or Examples 16 to 19 described below. The optical thickness of the mode loss action region 54 can be a value that is not an integer multiple of 1 / 4 of the wavelength λ0 of the light generated in the light emitting device. Alternatively, the optical thickness t0 of the mode loss action region 54 can be an integer multiple of 1 / 4 of the wavelength λ0 of the light generated in the light emitting device. In other words, the optical thickness t0 of the mode loss action region 54 can be a thickness that does not disturb the phase of the light generated in the light emitting device and does not destroy the standing wave. However, it does not have to be an integer multiple of 1 / 4 strictly. (λ0 / 4n0)×m-(λ0 / 8n0)≦t0≦(λ0 / 4n0)×2m+(λ0 / 8n0) It is sufficient to satisfy the above. Specifically, the optical thickness t0 of the mode loss action portion 54 is preferably set to about 25 to 250, where ¼ of the wavelength of the light generated in the light emitting element is set to “100”. By adopting these configurations, the phase difference between the laser light passing through the mode loss action portion 54 and the laser light passing through the current injection region 51 can be changed (the phase difference can be controlled), so that the oscillation mode loss can be controlled with a higher degree of freedom and the design freedom of the light emitting element can be increased.

[0264] In Example 15, the shape of the boundary between the current injection region 51 and the non-current injection inner region 52 was a circle (diameter: 8 μm), and the shape of the boundary between the non-current injection inner region 52 and the non-current injection outer region 53 was a circle (diameter: 12 μm). That is, when the area of ​​the orthogonal projection image of the current injection region 51 is S1 and the area of ​​the orthogonal projection image of the non-current injection inner region 52 is S2, 0.01≦S1 / (S1+S2)≦0.7 Specifically, S1 / (S1+S2)=8 2 / 12 2 =0.44 It is.

[0265] In the light-emitting devices of Example 15 or Examples 16 to 17 and Example 19 described below, when the optical distance from the active layer 23 in the current injection region 51 to the second surface of the second compound semiconductor layer 22 is OL2 and the optical distance from the active layer 23 in the mode loss effect region 55 to the top surface of the mode loss effect portion 54 (the surface facing the second electrode 32) is OL0, OL0>OL2 Specifically, OL0 / OL2=1.5 The generated laser light having the higher-order mode is scattered toward the outside of the resonator structure formed by the first light reflecting layer 41 and the second light reflecting layer 42 by the mode loss action region 55, and the oscillation mode loss increases. That is, the optical field intensity of the generated fundamental mode and the higher-order mode decreases as it moves away from the Z axis in the orthogonal projection image of the mode loss action region 55 due to the presence of the mode loss action region 55 acting on the increase and decrease of the oscillation mode loss (see the conceptual diagram of FIG. 55(B)). However, the decrease in the optical field intensity of the higher-order mode is greater than the decrease in the optical field intensity of the fundamental mode, so that the fundamental mode can be further stabilized, the threshold current can be lowered, and the relative optical field intensity of the fundamental mode can be increased. Moreover, the tail portion of the optical field intensity of the higher-order mode is located farther from the current injection region than in the conventional light emitting device (see FIG. 55(A)), so that the influence of the inverse lens effect can be reduced. In addition, if the mode loss action portion 54 made of SiO2 is not provided, the oscillation modes will be mixed.

[0266] The first compound semiconductor layer 21 is an n-GaN layer, and the active layer 23 is an In 0.04 Ga 0.96 N layer (barrier layer) and In 0.16 Ga 0.84The first electrode 31 is made of Ti / Pt / Au, and the second electrode 32 is made of a transparent conductive material, specifically, ITO. A circular opening 54A is formed in the mode loss effect portion 54, and the second compound semiconductor layer 22 is exposed at the bottom of the opening 54A. A first pad electrode (not shown) made of, for example, Ti / Pt / Au or V / Pt / Au is formed or connected on the edge of the first electrode 31 for electrical connection with an external circuit or the like. A second pad electrode 33 made of, for example, Ti / Pd / Au or Ti / Ni / Au is formed or connected on the edge of the second electrode 32 for electrical connection with an external circuit or the like. The first light reflecting layer 41 and the second light reflecting layer 42 are made of a laminated structure of a SiN layer and a SiO2 layer (total number of laminated dielectric films: 20 layers).

[0267] In the light-emitting device of Example 15, the current non-injection inner region 52 and the current non-injection outer region 53 are formed by ion implantation into the laminated structure 20. Although boron, for example, is selected as the ion species, the ion species is not limited to boron ions.

[0268] A method for manufacturing the light-emitting device of Example 15 will be outlined below.

[0269] [Process-1500] In manufacturing the light emitting device of Example 15, first, the same step as [Step-500] of Example 5 is carried out.

[0270] [Process-1510] Next, a current non-injection inner region 52 and a current non-injection outer region 53 are formed in the laminated structure 20 based on an ion implantation method using boron ions.

[0271] [Process-1520] Thereafter, in a step similar to [Step-510] of Example 5, a mode loss action portion (mode loss action layer) 54 having an opening 54A and made of SiO2 is formed on the second face 22b of the second compound semiconductor layer 22 based on a well-known method (see FIG. 54A).

[0272] [Process-1530] Thereafter, the light-emitting device of Example 15 can be obtained by carrying out steps similar to those following [Step-520] in Example 5. Note that the structure obtained in the middle of a step similar to [Step-520] is shown in FIG.

[0273] In the light-emitting device of Example 15, the laminated structure is formed with a current injection region, a non-current injection inner region surrounding the current injection region, and a non-current injection outer region surrounding the non-current injection inner region, and the orthogonal projection image of the mode loss action region and the orthogonal projection image of the non-current injection outer region are overlapped. That is, the current injection region and the mode loss action region are separated (separated) by the non-current injection inner region. Therefore, as shown in the conceptual diagram of FIG. 55(B), it is possible to increase or decrease the oscillation mode loss (specifically, increase in Example 15) to a desired state. Alternatively, it is possible to increase or decrease the oscillation mode loss to a desired state by appropriately determining the positional relationship between the current injection region and the mode loss action region, the thickness of the mode loss action portion constituting the mode loss action region, and the like. As a result, it is possible to solve problems in conventional light-emitting devices, such as an increase in threshold current and a deterioration in slope efficiency. For example, it is possible to reduce the threshold current by reducing the oscillation mode loss in the fundamental mode. Moreover, since the region where the oscillation mode loss is given and the region where the current is injected and contributes to light emission can be controlled independently, that is, the control of the oscillation mode loss and the control of the light emission state of the light emitting device can be controlled independently, the degree of freedom of control and the degree of freedom of design of the light emitting device can be increased. Specifically, by making the current injection region, the current non-injection region, and the mode loss effect region have the above-mentioned predetermined arrangement relationship, the magnitude relationship of the oscillation mode loss given by the mode loss effect region to the fundamental mode and higher modes can be controlled, and the oscillation mode loss given to the higher modes can be made larger relative to the oscillation mode loss given to the fundamental mode, thereby making it possible to further stabilize the fundamental mode. Moreover, since the light emitting device of Example 15 has the first portion 91, the occurrence of diffraction loss can be more reliably suppressed. EXAMPLES

[0274] Example 16 is a modification of Example 15, and relates to a light-emitting device having a 6-B configuration. As shown in a schematic partial cross-sectional view in FIG. 56, in the light-emitting device of Example 16, the non-current-injection inner region 52 and the non-current-injection outer region 53 are formed by plasma irradiation of the second surface of the second compound semiconductor layer 22, or ashing of the second surface of the second compound semiconductor layer 22, or reactive ion etching (RIE) of the second surface of the second compound semiconductor layer 22. Since the non-current-injection inner region 52 and the non-current-injection outer region 53 are thus exposed to plasma particles (specifically, argon, oxygen, nitrogen, etc.), the conductivity of the second compound semiconductor layer 22 deteriorates, and the non-current-injection inner region 52 and the non-current-injection outer region 53 become in a high resistance state. That is, the non-current-injection inner region 52 and the non-current-injection outer region 53 are formed by exposure of the second surface 22b of the second compound semiconductor layer 22 to plasma particles. Incidentally, the first light reflecting layer 41 is omitted in FIGS. 56, 57, 58A, and 58B.

[0275] In Example 16, the shape of the boundary between the current injection region 51 and the non-current injection inner region 52 was a circle (diameter: 10 μm), and the shape of the boundary between the non-current injection inner region 52 and the non-current injection outer region 53 was a circle (diameter: 15 μm). That is, when the area of ​​the orthogonal projection image of the current injection region 51 is S1 and the area of ​​the orthogonal projection image of the non-current injection inner region 52 is S2, 0.01≦S1 / (S1+S2)≦0.7 Specifically, S1 / (S1+S2)=10 2 / 15 2 =0.44 It is.

[0276] In Example 16, instead of [Step-1510] of Example 15, a current non-injection inner region 52 and a current non-injection outer region 53 may be formed in the stacked structure 20 by plasma irradiation of the second surface of the second compound semiconductor layer 22, or by ashing treatment of the second surface of the second compound semiconductor layer 22, or by reactive ion etching treatment of the second surface of the second compound semiconductor layer 22.

[0277] Except for the above points, the configuration and structure of the light-emitting device of Example 16 can be similar to the configuration and structure of the light-emitting device of Example 15, so detailed description will be omitted.

[0278] In the light-emitting device of Example 16 or Example 17 described later, by arranging the current injection region, the non-current injection region, and the mode loss effect region in the specified arrangement relationship described above, it is possible to control the magnitude relationship of the oscillation mode loss caused by the mode loss effect region for the fundamental mode and higher modes, and by making the oscillation mode loss caused to the higher mode larger relative to the oscillation mode loss caused to the fundamental mode, it is possible to further stabilize the fundamental mode. EXAMPLES

[0279] Example 17 is a modification of Examples 15 to 16, and relates to a light-emitting device having a 6-C configuration. As shown in a schematic partial cross-sectional view in Fig. 57, in the light-emitting device of Example 17, the second light reflecting layer 42 has a region that reflects or scatters light from the first light reflecting layer 41 toward the outside of the resonator structure formed by the first light reflecting layer 41 and the second light reflecting layer 42 (i.e., toward the mode loss effect region 55). Specifically, a portion of the second light reflecting layer 42 located above the side wall (side wall of the opening 54B) of the mode loss effect portion (mode loss effect layer) 54 has a forward tapered inclined portion 42A, or has a region that is curved convexly toward the first light reflecting layer 41.

[0280] In Example 17, the shape of the boundary between the current injection region 51 and the non-current injection inner region 52 was circular (diameter: 8 μm), and the shape of the boundary between the non-current injection inner region 52 and the non-current injection outer region 53 was circular (diameter: 10 μm to 20 μm).

[0281] In Example 17, in the same step as [Step-1520] in Example 15, when forming the mode loss action region (mode loss action layer) 54 having the opening 54B and made of SiO2, the opening 54B having a forward tapered sidewall may be formed. Specifically, a resist layer is formed on the mode loss action layer formed on the second surface 22b of the second compound semiconductor layer 22, and an opening is provided in the resist layer where the opening 54B is to be formed based on photolithography technology. The sidewall of this opening is made forward tapered based on a well-known method. Then, by performing etch-back, the opening 54B having a forward tapered sidewall can be formed in the mode loss action region (mode loss action layer) 54. Furthermore, by forming the second electrode 32 and the second light reflection layer 42 on such a mode loss action region (mode loss action layer) 54, the second light reflection layer 42 can be given a forward tapered inclined portion 42A.

[0282] Except for the above points, the configuration and structure of the light-emitting device of Example 17 can be similar to those of the light-emitting devices of Examples 15 and 16, and therefore detailed description thereof will be omitted. EXAMPLES

[0283] Example 18 is a modification of Examples 15 to 17, and relates to a light-emitting device having a 6-D configuration. As shown in FIG. 58A, a schematic partial cross-sectional view of the light-emitting device of Example 18, and as shown in FIG. 58B, a schematic partial cross-sectional view of a main part cut out, a convex portion 22A is formed on the second surface side of the second compound semiconductor layer 22. As shown in FIG. 58A and FIG. 58B, a mode loss action part (mode loss action layer) 54 is formed on a region 22B of the second surface 22b of the second compound semiconductor layer 22 surrounding the convex portion 22A. The convex portion 22A occupies the current injection region 51, the current injection region 51, and the non-current injection inner region 52. The mode loss action part (mode loss action layer) 54 is made of a dielectric material such as SiO2, as in Example 15. A non-current injection outer region 53 is provided in the region 22B. When the optical distance from the active layer 23 in the current injection region 51 to the second surface of the second compound semiconductor layer 22 is OL2, and the optical distance from the active layer 23 in the mode loss effect region 55 to the top surface of the mode loss effect portion 54 (the surface facing the second electrode 32) is OL0, OL0 <OL2 Specifically, OL2 / OL0=1.5 This produces a lens effect in the light emitting element.

[0284] In the light-emitting device of Example 18, the generated laser light having the higher-order mode is confined in the current injection region 51 and the non-current injection inner region 52 by the mode loss effect region 55, thereby reducing the oscillation mode loss. That is, the optical field intensity of the generated fundamental mode and higher-order mode increases in the orthogonal projection images of the current injection region 51 and the non-current injection inner region 52 due to the presence of the mode loss effect region 55 which acts to increase and decrease the oscillation mode loss.

[0285] In Example 18, the shape of the boundary between current injection region 51 and non-current injection inner region 52 was circular (diameter: 8 μm), and the shape of the boundary between non-current injection inner region 52 and non-current injection outer region 53 was circular (diameter: 30 μm).

[0286] In Example 18, between [Step-1510] and [Step-1520] in Example 15, a part of the second compound semiconductor layer 22 is removed from the second surface side to form the convex portion 22A.

[0287] Except for the above points, the configuration and structure of the light-emitting device of Example 18 can be the same as those of the light-emitting device of Example 15, so detailed description will be omitted. In the light-emitting device of Example 18, the oscillation mode loss caused by the mode loss effect region for various modes can be suppressed, and not only can the transverse mode be oscillated in multimode, but also the threshold current of laser oscillation can be reduced. In addition, as shown in the conceptual diagram of FIG. 55(C), the optical field intensity of the fundamental mode and higher modes can be increased in the orthogonal projection images of the current injection region and the current non-injection inner region due to the presence of the mode loss effect region acting on the increase / decrease of the oscillation mode loss (specifically, the decrease in Example 18). EXAMPLES

[0288] Example 19 is a modification of Examples 15 to 18. More specifically, the light-emitting device of Example 19 or Example 20 described later is composed of a surface-emitting laser element (light-emitting element) (vertical cavity laser, VCSEL) that emits laser light from the first surface 21a of the first compound semiconductor layer 21 through the first optical reflection layer 41.

[0289] In the light-emitting device of Example 19, as shown in a schematic partial cross-sectional view in Fig. 59, the second light reflecting layer 42 is fixed to a support substrate 49 made of a silicon semiconductor substrate via a bonding layer 48 made of a solder layer containing gold (Au) or tin (Sn) based on a solder bonding method. In manufacturing the light-emitting device of Example 19, except for removing the support substrate 49, that is, without removing the support substrate 49, for example, the same steps as [Step-1500] to [Step-1530] of Example 15 may be performed.

[0290] In the light-emitting device of Example 19, by arranging the current injection region, the non-current injection region, and the mode loss effect region in the specified arrangement relationship described above, it is possible to control the magnitude relationship of the oscillation mode loss caused by the mode loss effect region for the fundamental mode and higher modes, and by making the oscillation mode loss caused to the higher modes larger relative to the oscillation mode loss caused to the fundamental mode, it is possible to further stabilize the fundamental mode.

[0291] 59, the end of the first electrode 31 is spaced apart from the first light reflecting layer 41. However, the present invention is not limited to this structure, and the end of the first electrode 31 may be in contact with the first light reflecting layer 41, or the end of the first electrode 31 may be formed over the edge of the first light reflecting layer 41.

[0292] Also, for example, after performing steps similar to [Step-1500] to [Step-1530] of Example 15, the light-emitting element manufacturing substrate 11 may be removed to expose the first surface 21a of the first compound semiconductor layer 21, and then a first light reflecting layer 41 and a first electrode 31 may be formed on the first surface 21a of the first compound semiconductor layer 21. EXAMPLES

[0293] Example 20 is a modification of Examples 5 to 19, and relates to a light-emitting device of the seventh configuration, specifically, a light-emitting device of the 7-A configuration. More specifically, the light-emitting device of Example 20 is a surface-emitting laser element (light-emitting element) (vertical cavity laser, VCSEL) that emits laser light from the first surface 21a of the first compound semiconductor layer 21 through the first light reflecting layer 41.

[0294] The light-emitting device of Example 20, the schematic partial end view of which is shown in FIG. (a) a first compound semiconductor layer 21 made of a GaN-based compound semiconductor and having a first surface 21a and a second surface 21b opposite to the first surface 21a; an active layer (light emitting layer) 23 made of a GaN-based compound semiconductor and in contact with the second surface 21b of the first compound semiconductor layer 21; and a second compound semiconductor layer 22 made of a GaN-based compound semiconductor and having a first surface 22a and a second surface 22b opposite to the first surface 22a, the first surface 22a being in contact with the active layer 23; A laminated structure 20 formed by laminating (b) a second electrode 32 formed on the second surface 22b of the second compound semiconductor layer 22; (c) a second light-reflecting layer 42 formed on the second electrode 32; (d) a mode loss effect portion 64 that is provided on the first surface 21 a of the first compound semiconductor layer 21 and that constitutes a mode loss effect region 65 that acts to increase or decrease the oscillation mode loss; (e) a first light reflecting layer 41 formed from above the first surface 21a of the first compound semiconductor layer 21 to above the mode loss effect portion 64; and (f) a first electrode 31 electrically connected to the first compound semiconductor layer 21; In the light emitting device of Example 20, the first electrode 31 is formed on the first surface 21a of the first compound semiconductor layer 21.

[0295] The laminated structure 20 is formed with a current injection region 61, a non-current injection inner region 62 surrounding the current injection region 61, and a non-current injection outer region 63 surrounding the non-current injection inner region 62, and an orthogonal projection image of the mode loss effect region 65 and an orthogonal projection image of the non-current injection outer region 63 overlap each other. Here, the laminated structure 20 is formed with the non-current injection regions 62, 63, which are formed in the thickness direction from the second compound semiconductor layer 22 to a part of the first compound semiconductor layer 21 in the illustrated example. However, the non-current injection regions 62, 63 may be formed in a region on the second electrode side of the second compound semiconductor layer 22 in the thickness direction, or may be formed in the entire second compound semiconductor layer 22, or may be formed in the second compound semiconductor layer 22 and the active layer 23.

[0296] The configurations of the laminated structure 20, the second pad electrode 33, the first light reflecting layer 41, and the second light reflecting layer 42 can be similar to those of Example 15, and the configurations of the bonding layer 48 and the support substrate 49 can be similar to those of Example 19. A circular opening 64A is formed in the mode loss effect portion 64, and the first surface 21a of the first compound semiconductor layer 21 is exposed at the bottom of this opening 64A.

[0297] The mode loss effect portion (mode loss effect layer) 64 is made of a dielectric material such as SiO2, and is formed on the first surface 21a of the first compound semiconductor layer 21. The optical thickness t0 of the mode loss effect portion 64 can be a value that is not an integer multiple of 1 / 4 of the wavelength λ0 of the light generated in the light-emitting element. Alternatively, the optical thickness t0 of the mode loss effect portion 64 can be an integer multiple of 1 / 4 of the wavelength λ0 of the light generated in the light-emitting element. In other words, the optical thickness t0 of the mode loss effect portion 64 can be a thickness that does not disturb the phase of the light generated in the light-emitting element and does not destroy standing waves. However, it does not have to be an integer multiple of 1 / 4 strictly, (λ0 / 4n0)×m-(λ0 / 8n0)≦t0≦(λ0 / 4n0)×2m+(λ0 / 8n0) It is sufficient to satisfy the above. Specifically, the optical thickness t0 of the mode loss effect portion 64 is preferably set to about 25 to 250, where ¼ of the wavelength λ0 of the light generated in the light emitting element is set to “100”. By adopting these configurations, the phase difference between the laser light passing through the mode loss effect portion 64 and the laser light passing through the current injection region 61 can be changed (the phase difference can be controlled), so that the oscillation mode loss can be controlled with a higher degree of freedom and the design freedom of the light emitting element can be increased.

[0298] In Example 20, the shape of the boundary between the current injection region 61 and the non-current injection inner region 62 was a circle (diameter: 8 μm), and the shape of the boundary between the non-current injection inner region 62 and the non-current injection outer region 63 was a circle (diameter: 15 μm). In other words, when the area of ​​the orthogonal projection image of the current injection region 61 is S1' and the area of ​​the orthogonal projection image of the non-current injection inner region 62 is S2', 0.01≦S1' / (S1'+S2')≦0.7 Specifically, S1' / (S1'+S2')=8 2 / 15 2 =0.28 It is.

[0299] In the light-emitting device of Example 20, when the optical distance from the active layer 23 in the current injection region 61 to the first surface of the first compound semiconductor layer 21 is OL1' and the optical distance from the active layer 23 in the mode loss effect region 65 to the top surface of the mode loss effect portion 64 (the surface facing the first electrode 31) is OL0', OL0'>OL1' Specifically, OL0' / OL1'=1.01 The generated laser light having the higher-order mode is dissipated by the mode loss effect region 65 toward the outside of the resonator structure formed by the first light reflecting layer 41 and the second light reflecting layer 42, thereby increasing the oscillation mode loss. That is, the optical field intensity of the generated fundamental mode and higher-order mode decreases the farther away from the Z axis in the orthogonal projection image of the mode loss effect region 65 due to the presence of the mode loss effect region 65 acting on the increase and decrease of the oscillation mode loss (see the conceptual diagram in FIG. 55(B)), but the decrease in the optical field intensity of the higher-order mode is greater than the decrease in the optical field intensity of the fundamental mode, so that the fundamental mode can be further stabilized, the threshold current can be reduced, and the relative optical field intensity of the fundamental mode can be increased.

[0300] In the light-emitting device of Example 20, the current non-injection inner region 62 and the current non-injection outer region 63 are formed by ion implantation into the laminated structure 20, similarly to Example 15. Although boron, for example, is selected as the ion species, the ion species is not limited to boron ions.

[0301] A method for manufacturing the light-emitting device of Example 20 will be described below.

[0302] [Process-2000] First, a step similar to [Step 1500] in Example 15 is performed to obtain the laminated structure 20. Next, a step similar to [Step 1510] in Example 15 is performed to form the current non-injection inner region 62 and the current non-injection outer region 63 in the laminated structure 20.

[0303] [Process-2010] Next, the second electrode 32 is formed on the second surface 22b of the second compound semiconductor layer 22, for example, based on a lift-off method, and further, the second pad electrode 33 is formed based on a well-known method. After that, the second light reflecting layer 42 is formed from above the second electrode 32 to above the second pad electrode 33 based on a well-known method.

[0304] [Process-2020] Thereafter, the second light reflecting layer 42 is fixed to a supporting substrate 49 via a bonding layer 48 .

[0305] [Process-2030] Next, the substrate 11 for manufacturing a light-emitting element is removed to expose the first surface 21a of the first compound semiconductor layer 21. Specifically, first, the thickness of the substrate 11 for manufacturing a light-emitting element is reduced based on a mechanical polishing method, and then the remaining portion of the substrate 11 for manufacturing a light-emitting element is removed based on a CMP method. In this way, the first surface 21a of the first compound semiconductor layer 21 is exposed, and then a base surface 90 having a first portion 91 and a second portion 92 is formed on the first surface 21a of the first compound semiconductor layer 21.

[0306] [Process-2040] Thereafter, a mode loss action portion (mode loss action layer) 64 having an opening 64A and made of SiO2 is formed on the first surface 21a of the first compound semiconductor layer 21 (specifically, on the second portion 92 of the base surface 90) based on a well-known method.

[0307] [Process-2050] Next, a first light reflecting layer 41 is formed on the first portion 91 of the first surface 21a of the first compound semiconductor layer 21 exposed at the bottom of the opening 64A of the mode loss action portion 64, and further, a first electrode 31 is formed. Note that a part of the first electrode 31 penetrates the mode loss action portion (mode loss action layer) 64 in a region not shown, and reaches the first compound semiconductor layer 21. In this manner, a light emitting element of Example 20 having the structure shown in FIG. 60 can be obtained.

[0308] In the light-emitting device of Example 20, the laminated structure also has a current injection region, a non-current injection inner region surrounding the current injection region, and a non-current injection outer region surrounding the non-current injection inner region, and the orthogonal projection image of the mode loss effect region and the orthogonal projection image of the non-current injection outer region overlap. Therefore, as shown in the conceptual diagram of FIG. 55(B), it is possible to increase or decrease the oscillation mode loss (specifically, increase in Example 20) as desired. Moreover, since the control of the oscillation mode loss and the control of the light-emitting state of the light-emitting device can be performed independently, the degree of freedom of control and the degree of freedom of design of the light-emitting device can be increased. Specifically, by making the current injection region, the non-current injection region, and the mode loss effect region have the above-mentioned predetermined arrangement relationship, it is possible to control the magnitude relationship of the oscillation mode loss given by the mode loss effect region to the fundamental mode and higher modes, and by making the oscillation mode loss given to the higher modes relatively larger than the oscillation mode loss given to the fundamental mode, it is possible to further stabilize the fundamental mode. In addition, it is also possible to reduce the influence of the inverse lens effect. Moreover, since the light emitting device of Example 20 has the first portion 91, the occurrence of diffraction loss can be more reliably suppressed.

[0309] In Example 20, similarly to Example 16, the non-current-injection inner region 62 and the non-current-injection outer region 63 can be formed by plasma irradiation of the second surface of the second compound semiconductor layer 22, ashing of the second surface of the second compound semiconductor layer 22, or reactive ion etching (RIE) of the second surface of the second compound semiconductor layer 22 (light-emitting device of the 7-B configuration). By exposing the non-current-injection inner region 62 and the non-current-injection outer region 63 to plasma particles in this way, the conductivity of the second compound semiconductor layer 22 is deteriorated, and the non-current-injection inner region 62 and the non-current-injection outer region 63 become in a high resistance state. That is, the non-current-injection inner region 62 and the non-current-injection outer region 63 are formed by exposing the second surface 22b of the second compound semiconductor layer 22 to plasma particles.

[0310] Also, similar to Example 17, the second light reflecting layer 42 can be configured to have a region that reflects or scatters light from the first light reflecting layer 41 toward the outside of the resonator structure formed by the first light reflecting layer 41 and the second light reflecting layer 42 (i.e., toward the mode loss effect region 65) (light-emitting element of the 7-C configuration).

[0311] Also, as in Example 18, a mode loss effect region (mode loss effect layer) 64 may be formed (light-emitting element of the 7th-D configuration). The mode loss effect region (mode loss effect layer) 64 may be formed on a region of the first surface 21a of the first compound semiconductor layer 21 surrounding the convex portion. The convex portion occupies the current injection region 61, the current injection region 61, and the non-current injection inner region 62. As a result, the laser light having the generated higher-order mode is confined in the current injection region 61 and the non-current injection inner region 62 by the mode loss effect region 65, thereby reducing the oscillation mode loss. That is, the optical field intensity of the generated fundamental mode and higher-order mode increases in the orthogonal projection images of the current injection region 61 and the non-current injection inner region 62 due to the presence of the mode loss effect region 65 acting to increase and decrease the oscillation mode loss. Even in the modified example of the light-emitting device of Example 20 having such a configuration, it is possible to suppress the oscillation mode loss caused by the mode loss effect region 65 for various modes, to perform multimode oscillation of transverse modes, and to reduce the threshold current of laser oscillation. Also, as shown in the conceptual diagram in Fig. 55(C), the optical field intensity of the fundamental mode and higher modes generated can be increased in the orthogonal projection images of the current injection region and the current non-injection inner region due to the presence of the mode loss effect region 65 which acts to increase or decrease the oscillation mode loss (specifically, to decrease it in the modified example of the light-emitting device of Example 20). EXAMPLES

[0312] Example 21 is a modification of Examples 5 to 20, and relates to a light-emitting device having an eighth configuration.

[0313] By the way, the resonator length L in the laminated structure formed by two DBR layers and the laminated structure formed therebetween is OR is the equivalent refractive index of the entire laminate structure, n eq When the wavelength of the laser light to be emitted from the surface emitting laser element (light emitting element) is λ0, L = (m λ0) / (2 n eq ) Here, m is a positive integer. In a surface emitting laser element (light emitting element), the wavelength at which oscillation can be achieved is expressed as a function of the cavity length L OREach oscillation mode that can oscillate is called a longitudinal mode. Among the longitudinal modes, those that match the gain spectrum determined by the active layer can oscillate as a laser. The spacing Δλ between the longitudinal modes is determined by the effective refractive index n eff When λ0 2 / (2n eff L) That is, the resonator length L OR The longer the cavity length L, the narrower the longitudinal mode spacing Δλ. OR When the effective refractive index n eq and the effective refractive index n eff When the oscillation wavelength is λ0, the following relationship exists between

[0314] n eff =n eq -λ0·(dn eq / dλ0)

[0315] When the laminated structure is made of GaAs-based compound semiconductor layers, the cavity length L OR is usually short, at 1 μm or less, and the longitudinal mode laser light emitted from the surface-emitting laser element is of one type (one wavelength) (see the conceptual diagram in FIG. 68A). Therefore, it is possible to accurately control the oscillation wavelength of the longitudinal mode laser light emitted from the surface-emitting laser element. On the other hand, when the laminated structure is formed from GaN-based compound semiconductor layers, the resonator length L OR is usually several times longer than the wavelength of the laser light emitted from the surface-emitting laser element. Therefore, the laser light in the longitudinal mode that can be emitted from the surface-emitting laser element will be of multiple types (see the conceptual diagram in FIG. 68B), making it difficult to accurately control the oscillation wavelength of the laser light that can be emitted from the surface-emitting laser element.

[0316] 61, in the light emitting device of Example 21 or in the light emitting devices of Examples 22 to 24 described below, at least two light absorbing material layers 71, preferably at least four light absorbing material layers 71, and specifically, 20 light absorbing material layers 71 in Example 21 are formed in the laminated structure 20 including the second electrode 32 in parallel to a virtual plane (XY plane) occupied by the active layer 23. Note that, to simplify the drawing, only two light absorbing material layers 71 are shown in the drawing.

[0317] In Example 21, the oscillation wavelength (desired oscillation wavelength emitted from the light emitting element) λ0 is 450 nm. The 20 light absorbing material layers 71 are made of a compound semiconductor material having a narrower band gap than the compound semiconductor constituting the laminated structure 20, specifically, n-In 0.2 Ga 0.8 N and is formed inside the first compound semiconductor layer 21. The thickness of the light absorbing material layer 71 is λ0 / (4·n eq ) or less, specifically, 3 nm. The light absorption coefficient of the light absorption material layer 71 is at least twice the light absorption coefficient of the first compound semiconductor layer 21 made of an n-GaN layer, specifically, 1×10 3 It is double.

[0318] In addition, the light absorbing material layer 71 is located at a minimum amplitude portion of the standing wave of light formed inside the laminated structure, and the active layer 23 is located at a maximum amplitude portion of the standing wave of light formed inside the laminated structure. The distance between the center of the active layer 23 in the thickness direction and the center of the light absorbing material layer 71 adjacent to the active layer 23 in the thickness direction is 46.5 nm. Furthermore, the equivalent refractive index of the entire two light absorbing material layers 71 and the portion of the laminated structure located between the light absorbing material layers 71 and 71 (specifically, the first compound semiconductor layer 21 in Example 21) is set to n eq , the distance between the light absorbing material layers 71 is L Abs When 0.9×{(m λ0) / (2 n eq )}≦L Abs ≦1.1×{(m λ0) / (2 n eq )} Here, m is 1 or any integer equal to or greater than 1. However, in Example 21, m=1. Therefore, the distance between adjacent light absorbing material layers 71 is, in all of the plurality of light absorbing material layers 71 (20 light absorbing material layers 71), 0.9×{λ0 / (2·n eq )}≦L Abs ≦1.1×{λ0 / (2·n eq )} The equivalent refractive index n eq Specifically, the value is 2.42, and when m=1, specifically, L Abs =1×450 / (2×2.42) =93.0nm In addition, in some of the 20 light absorbing material layers 71, m may be any integer of 2 or more.

[0319] In manufacturing the light-emitting device of Example 21, the stacked structure 20 is formed in the same step as [Step-500] of Example 5, but at this time, 20 light absorbing material layers 71 are also formed inside the first compound semiconductor layer 21. Except for this, the light-emitting device of Example 21 can be manufactured based on the same method as the light-emitting device of Example 5.

[0320] When a plurality of longitudinal modes occur in the gain spectrum determined by the active layer 23, this is shown in FIG. 62. In FIG. 62, two longitudinal modes, longitudinal mode A and longitudinal mode B, are illustrated. In this case, the light absorbing material layer 71 is located in the minimum amplitude portion of the longitudinal mode A and is not located in the minimum amplitude portion of the longitudinal mode B. In this case, the mode loss of the longitudinal mode A is minimized, but the mode loss of the longitudinal mode B is large. In FIG. 62, the mode loss of the longitudinal mode B is shown by a solid line. Therefore, the longitudinal mode A is easier to oscillate than the longitudinal mode B. Therefore, by using such a structure, that is, by controlling the position and period of the light absorbing material layer 71, a specific longitudinal mode can be stabilized and made easier to oscillate. On the other hand, the mode loss for the undesired other longitudinal modes can be increased, so that the oscillation of the undesired other longitudinal modes can be suppressed.

[0321] As described above, in the light-emitting device of Example 21, at least two light-absorbing material layers are formed inside the laminated structure, so that it is possible to suppress the oscillation of laser light of an undesired longitudinal mode among the laser light of multiple longitudinal modes that can be emitted from the surface-emitting laser element. As a result, it is possible to accurately control the oscillation wavelength of the emitted laser light. Moreover, since the light-emitting device of Example 21 has the first portion 91, it is possible to reliably suppress the occurrence of diffraction loss. EXAMPLES

[0322] Example 22 is a modification of Example 21. In Example 21, the light absorbing material layer 71 is made of a compound semiconductor material having a narrower band gap than the compound semiconductor constituting the stacked structure 20. On the other hand, in Example 22, the ten light absorbing material layers 71 are made of a compound semiconductor material doped with an impurity, specifically, 1×10 19 / cm 3 The active layer 23 is made of a compound semiconductor material (specifically, n-GaN:Si) having an impurity concentration (impurity: Si). In Example 22, the oscillation wavelength λ0 is set to 515 nm. The composition of the active layer 23 is In.0.3 Ga 0.7 In Example 22, m=1, and L Abs The value of m is 107 nm, the distance between the center of the active layer 23 in the thickness direction and the center of the light absorbing material layer 71 adjacent to the active layer 23 in the thickness direction is 53.5 nm, and the thickness of the light absorbing material layer 71 is 3 nm. Except for the above points, the configuration and structure of the light absorbing device of Example 22 can be similar to the configuration and structure of the light absorbing material layer 71 of Example 21, and therefore detailed description will be omitted. Note that, in some of the 10 light absorbing material layers 71, m can be any integer equal to or greater than 2. EXAMPLES

[0323] Example 23 is also a modification of Example 21. In Example 23, the five light absorbing material layers (for convenience, referred to as the "first light absorbing material layer") have the same structure as the light absorbing material layer 71 of Example 21, that is, n-In 0.3 Ga 0.7 In Example 23, one light absorbing material layer (for convenience, referred to as the "second light absorbing material layer") was made of a transparent conductive material. Specifically, the second light absorbing material layer was used as the second electrode 32 made of ITO. In Example 23, the oscillation wavelength λ0 was set to 450 nm. Also, m=1 and 2. When m=1, L Abs The value of is 93.0 nm, the distance between the center of the active layer 23 in the thickness direction and the center of the first light absorbing material layer adjacent to the active layer 23 in the thickness direction is 46.5 nm, and the thickness of the five first light absorbing material layers is 3 nm. 0.9×{λ0 / (2·n eq )}≦L Abs ≦1.1×{λ0 / (2·n eq )} In addition, the first light absorbing material layer and the second light absorbing material layer adjacent to the active layer 23 have m=2. That is, 0.9×{(2·λ0) / (2·n eq )}≦L Abs ≦1.1×{(2·λ0) / (2·n eq )} The light absorption coefficient of the second light absorbing material layer, which also serves as the second electrode 32, is 2000 cm -1 , thickness is 30 nm, and the distance from the active layer 23 to the second light absorbing material layer is 139.5 nm. Except for the above points, the configuration and structure of the light emitting device of Example 23 can be the same as the configuration and structure of the light absorbing material layer of Example 21, so detailed description will be omitted. Note that, in some of the five first light absorbing material layers, m can be any integer equal to or greater than 2. Note that, unlike Example 21, the number of light absorbing material layers 71 can be 1. In this case as well, the positional relationship between the second light absorbing material layer also serving as the second electrode 32 and the light absorbing material layer 71 must satisfy the following formula. 0.9×{(m λ0) / (2 n eq )}≦L Abs ≦1.1×{(m λ0) / (2 n eq )} EXAMPLES

[0324] Example 24 is a modification of Examples 21 to 23. More specifically, the light emitting element of Example 24 is composed of a surface emitting laser element (vertical cavity laser, VCSEL) that emits laser light from the first surface 21a of the first compound semiconductor layer 21 through the first light reflecting layer 41.

[0325] In the light-emitting element of Example 24, as shown in a schematic partial cross-sectional view in Figure 63, the second light-reflecting layer 42 is fixed to a supporting substrate 49 made of a silicon semiconductor substrate by a solder bonding method via a bonding layer 48 made of a gold (Au) layer or a solder layer containing tin (Sn).

[0326] The light-emitting device of Example 24 can be manufactured in the same manner as the light-emitting device of Example 5, except that 20 light-absorbing material layers 71 are also formed inside the first compound semiconductor layer 21, and that the support substrate 49 is not removed.

[0327] Although the present disclosure has been described above based on preferred embodiments, the present disclosure is not limited to these embodiments. The configuration and structure of the light-emitting element described in the embodiments are illustrative and can be appropriately changed, and the manufacturing method of the light-emitting element can also be appropriately changed. In some cases, by appropriately selecting the bonding layer and the support substrate, a surface-emitting laser element that emits light from the second surface of the second compound semiconductor layer through the second light reflecting layer can be obtained. In some cases, a through hole leading to the first compound semiconductor layer can be formed in the region of the second compound semiconductor layer and the active layer that does not affect the light emission, and a first electrode insulated from the second compound semiconductor layer and the active layer can be formed in the through hole. The first light reflecting layer may extend to the second portion of the base surface. That is, the first light reflecting layer on the base surface may be composed of a so-called solid film. In this case, a through hole is formed in the first light reflecting layer that extends to the second portion of the base surface, and a first electrode connected to the first compound semiconductor layer is formed in the through hole. In addition, the base surface 90 can be formed by providing a sacrificial layer based on the nanoimprint method.

[0328] A wavelength conversion material layer (color conversion material layer) may be provided in the region from which the light of the light emitting element is emitted. In this case, white light may be emitted through the wavelength conversion material layer (color conversion material layer). Specifically, when the light emitted from the active layer is emitted to the outside through the first light reflecting layer, the wavelength conversion material layer (color conversion material layer) may be formed on the light emitting side of the first light reflecting layer, and when the light emitted from the active layer is emitted to the outside through the second light reflecting layer, the wavelength conversion material layer (color conversion material layer) may be formed on the light emitting side of the second light reflecting layer.

[0329] When blue light is emitted from the light emitting layer, the following configuration can be adopted to make it possible to emit white light via the wavelength converting material layer. [A] By using a wavelength converting material layer that converts the blue light emitted from the light emitting layer into yellow light, white light that is a mixture of blue and yellow light is obtained as the light emitted from the wavelength converting material layer. [B] By using a wavelength converting material layer that converts the blue light emitted from the light emitting layer into orange light, white light that is a mixture of blue and orange is obtained as the light emitted from the wavelength converting material layer. [C] By using a wavelength converting material layer that converts the blue light emitted from the light emitting layer to green light and a wavelength converting material layer that converts it to red light, white light that is a mixture of blue, green, and red is obtained as the light emitted from the wavelength converting material layer.

[0330] Alternatively, when ultraviolet light is emitted from the light emitting layer, the following configuration can be adopted to make it possible to emit white light via the wavelength converting material layer. [D] By using a wavelength converting material layer that converts the ultraviolet light emitted from the light emitting layer into blue light and a wavelength converting material layer that converts it into yellow light, white light that is a mixture of blue and yellow is obtained as the light emitted from the wavelength converting material layer. [E] By using a wavelength converting material layer that converts the ultraviolet light emitted from the light emitting layer into blue light and a wavelength converting material layer that converts it into orange light, white light that is a mixture of blue and orange is obtained as the light emitted from the wavelength converting material layer. [F] By using a wavelength converting material layer that converts the ultraviolet light emitted from the light emitting layer into blue light, a wavelength converting material layer that converts it into green light, and a wavelength converting material layer that converts it into red light, white light that is a mixture of blue, green, and red is obtained as the light emitted from the wavelength converting material layer.

[0331] Here, examples of wavelength conversion materials that are excited by blue light and emit red light include red-emitting phosphor particles, more specifically, (ME:Eu)S [wherein "ME" means at least one type of atom selected from the group consisting of Ca, Sr, and Ba, and the same applies below], (M:Sm) x (Si,Al) 12 (O,N) 16[wherein "M" means at least one atom selected from the group consisting of Li, Mg, and Ca, and the same applies below], ME2Si5N8:Eu, (Ca:Eu)SiN2, and (Ca:Eu)AlSiN3 can be given. In addition, examples of wavelength conversion materials that are excited by blue light and emit green light include green-emitting phosphor particles, more specifically, (ME:Eu)Ga2S4, (M:RE) x (Si,Al) 12 (O,N) 16 [wherein "RE" means Tb and Yb], (M:Tb) x (Si,Al) 12 (O,N) 16 , (M:Yb) x (Si,Al) 12 (O,N) 16 , Si 6-Z Al Z O Z N 8-Z :Eu can be mentioned. Furthermore, as a wavelength conversion material that is excited by blue light and emits yellow light, specifically, yellow light emitting phosphor particles, more specifically, YAG (yttrium aluminum garnet) phosphor particles can be mentioned. The wavelength conversion material may be one type, or two or more types may be mixed and used. Furthermore, by using a mixture of two or more types of wavelength conversion materials, it is possible to configure the wavelength conversion material mixture to emit light of a color other than yellow, green, and red. Specifically, for example, it may be configured to emit cyan light, in which case green light emitting phosphor particles (for example, LaPO4:Ce,Tb,BaMgAl 10 O 17 :Eu,Mn,Zn2SiO4:Mn,MgAl 11 O 19 :Ce,Tb,Y2SiO5:Ce,Tb,MgAl 11 O 19 :CE,Tb,Mn) and blue-emitting phosphor particles (e.g., BaMgAl 10 O 17 :Eu, BaMg2Al 16 O 27:Eu, Sr2P2O7:Eu, Sr5(PO4)3Cl:Eu, (Sr,Ca,Ba,Mg)5(PO4)3Cl:Eu, CaWO4, CaWO4:Pb) can be used.

[0332] In addition, examples of wavelength conversion materials that are excited by ultraviolet light and emit red light include red-emitting phosphor particles, more specifically, Y2O3:Eu, YVO4:Eu, Y(P,V)O4:Eu, 3.5MgO·0.5MgF2·Ge2:Mn, CaSiO3:Pb,Mn, and Mg6AsO 11 :Mn, (Sr,Mg)3(PO4)3:Sn, La2O2S:Eu, and Y2O2S:Eu. In addition, examples of wavelength conversion materials that are excited by ultraviolet light and emit green light include green light-emitting phosphor particles, more specifically, LaPO4:Ce,Tb, BaMgAl 10 O 17 :Eu,Mn,Zn2SiO4:Mn,MgAl 11 O 19 :Ce,Tb,Y2SiO5:Ce,Tb,MgAl 11 O 19 : Ce, Tb, Mn, Si 6-Z Al Z O Z N 8-Z Furthermore, examples of wavelength conversion materials that are excited by ultraviolet light and emit blue light include blue light-emitting phosphor particles, more specifically BaMgAl 10 O 17 :Eu, BaMg2Al 16 O 27:Eu, Sr2P2O7:Eu, Sr5(PO4)3Cl:Eu, (Sr,Ca,Ba,Mg)5(PO4)3Cl:Eu, CaWO4, CaWO4:Pb can be mentioned. Furthermore, as a wavelength conversion material that is excited by ultraviolet light and emits yellow light, specifically, yellow light emitting phosphor particles, more specifically, YAG phosphor particles can be mentioned. The wavelength conversion material may be one type, or two or more types may be mixed and used. Furthermore, by using a mixture of two or more types of wavelength conversion materials, it is possible to configure the wavelength conversion material mixture to emit light of a color other than yellow, green, and red. Specifically, it may be configured to emit cyan light, and in this case, a mixture of the above-mentioned green light emitting phosphor particles and blue light emitting phosphor particles may be used.

[0333] However, the wavelength conversion material (color conversion material) is not limited to phosphor particles, and examples of such materials include light-emitting particles that apply quantum well structures such as a two-dimensional quantum well structure, a one-dimensional quantum well structure (quantum wire), and a zero-dimensional quantum well structure (quantum dot) that localize the wave function of carriers and use the quantum effect in indirect transition silicon-based materials to efficiently convert carriers into light, as in the case of direct transition materials, and it is known that rare earth atoms added to semiconductor materials emit light sharply due to intrashell transitions, and examples of such light-emitting particles that apply such techniques can also be mentioned.

[0334] As described above, quantum dots can be cited as wavelength conversion materials (color conversion materials). As the size (diameter) of a quantum dot becomes smaller, the band gap energy becomes larger, and the wavelength of light emitted from the quantum dot becomes shorter. That is, the smaller the size of a quantum dot, the shorter the wavelength of light (light on the blue light side) that it emits, and the larger the size, the longer the wavelength of light (light on the red light side) that it emits. Therefore, by using the same material to compose the quantum dot and adjusting the size of the quantum dot, it is possible to obtain quantum dots that emit light with a desired wavelength (color conversion to a desired color). Specifically, it is preferable that the quantum dot has a core-shell structure. Examples of materials constituting quantum dots include, but are not limited to, Si; Se; chalcopyrite compounds such as CIGS (CuInGaSe), CIS (CuInSe2), CuInS2, CuAlS2, CuAlSe2, CuGaS2, CuGaSe2, AgAlS2, AgAlSe2, AgInS2, and AgInSe2; perovskite materials; III-V compounds such as GaAs, GaP, InP, InAs, InGaAs, AlGaAs, InGaP, AlGaInP, InGaAsP, and GaN; CdSe, CdSeS, CdS, CdTe, In2Se3, In2S3, Bi2Se3, Bi2S3, ZnSe, ZnTe, ZnS, HgTe, HgS, PbSe, PbS, and TiO2.

[0335] The present disclosure may also be configured as follows. [A01] 《Light-emitting element》 a first compound semiconductor layer having a first surface and a second surface opposite to the first surface; an active layer facing the second surface of the first compound semiconductor layer; and a laminated structure in which a second compound semiconductor layer having a first surface facing the active layer and a second surface opposite to the first surface is laminated; a first light reflecting layer formed on the first surface side of the first compound semiconductor layer and having a convex shape extending in a direction away from the active layer; and a second light reflecting layer formed on the second surface side of the second compound semiconductor layer and having a flat shape; Equipped with A light emitting element in which a partition wall is formed surrounding a first light reflecting layer and extending in a stacking direction of a stacked structure. [A02] The light-emitting device according to [A01], wherein the partition wall extends from the first surface side of the first compound semiconductor layer, within the first compound semiconductor layer, to a midpoint in a thickness direction of the first compound semiconductor layer. [A03] The light-emitting device according to [A01], wherein the partition wall extends from the second surface side of the second compound semiconductor layer into the second compound semiconductor layer and the active layer, and further extends into the first compound semiconductor layer midway in a thickness direction of the first compound semiconductor layer. [A04] The light-emitting device according to any one of [A01] to [A03], wherein the partition is made of a material that does not transmit light generated in the active layer. [A05] The light-emitting device according to any one of [A01] to [A04], wherein the partition is made of a material that reflects light generated in the active layer. [A06] When the thermal conductivity of the material constituting the first compound semiconductor layer is TC1 and the thermal conductivity of the material constituting the partition wall is TC0, 1×10 -1 ≦TC1 / TC0≦1×10 2 The light-emitting element according to any one of [A01] to [A05], which satisfies the following: [A07] When the linear expansion coefficient of the material constituting the first compound semiconductor layer is CTE1 and the linear expansion coefficient of the material constituting the partition wall is CTE0, |CTE0-CTE1|≦1×10 -4 / K The light-emitting element according to any one of [A01] to [A06], which satisfies the following: [A08] The partition is made of a solder material, The light-emitting element according to any one of [A01] to [A07], wherein a part of the partition is exposed on an outer surface of the light-emitting element. [A09] The light-emitting device according to any one of [A01] to [A08], wherein a side surface of the partition narrows in a direction from the first surface side of the first compound semiconductor layer toward the second surface side of the second compound semiconductor layer. [A10] The first light reflecting layer is formed on a base surface located on the first surface side of the first compound semiconductor layer, The base surface extends to a peripheral region; The light-emitting device according to any one of [A01] to [A09], wherein the base surface is uneven and differentiable. [B01]《Light-emitting element array》 A light emitting element array including a plurality of light emitting elements arranged in an array, Each light emitting element is a first compound semiconductor layer having a first surface and a second surface opposite to the first surface; an active layer facing the second surface of the first compound semiconductor layer; and a laminated structure in which a second compound semiconductor layer having a first surface facing the active layer and a second surface opposite to the first surface is laminated; a first light reflecting layer formed on the first surface side of the first compound semiconductor layer and having a convex shape extending in a direction away from the active layer; and a second light reflecting layer formed on the second surface side of the second compound semiconductor layer and having a flat shape; A light-emitting element array comprising: [B02] The light-emitting element array according to [B01], wherein in each light-emitting element, a partition wall is formed surrounding the first light reflecting layer and extending in the stacking direction of the stacked structure. [B03] The light-emitting element array according to [B02], wherein in each light-emitting element, the partition wall extends from the first surface side of the first compound semiconductor layer, through the first compound semiconductor layer, to midway in a thickness direction of the first compound semiconductor layer. [B04] The relationship between L0, L1 and L3 is The following formula (1) is satisfied, preferably formula (1') is satisfied, or The following formula (2) is satisfied, preferably the following formula (2'): The following formula (1) and formula (2) are satisfied, or The light-emitting element array according to [B03], which satisfies the following formulas (1') and (2'): 0.01×L0≦L0-L1(1) 0.05×L0≦L0-L1(1') 0.01×L3≦L1(2) 0.05×L3≦L1(2') Where: L0: distance from an end of the facing surface of the first light reflecting layer facing the first surface of the first compound semiconductor layer to the active layer L1: the distance from the active layer to the end of the partition wall that extends partway through the first compound semiconductor layer in the thickness direction of the first compound semiconductor layer (the upper end of the partition wall that faces the active layer) L3: The distance from the axis of the first light reflecting layer constituting the light emitting element to the orthogonal projection image of the partition wall onto the laminated structure (more specifically, the orthogonal projection image of the upper end portion of the partition wall) It is. [B05] The light-emitting element array according to [B02], wherein in each light-emitting element, the partition extends from the second surface side of the second compound semiconductor layer into the second compound semiconductor layer and the active layer, and further extends into the first compound semiconductor layer to a position midway in a thickness direction of the first compound semiconductor layer. [B06] The relationship between L0, L2 and L3' is The following formula (3) is satisfied, preferably the following formula (3'): The following formula (4) is satisfied, preferably formula (4') is satisfied, or The following formulas (3) and (4) are satisfied, or The light-emitting element array according to [B05], which satisfies the following formulas (3') and (4'): 0.01×L0≦L2(3) 0.05×L0≦L2(3') 0.01×L3'≦L2(4) 0.05×L3'≦L2(4') Where: L0: distance from an end of the facing surface of the first light reflecting layer facing the first surface of the first compound semiconductor layer to the active layer L2: distance from the active layer to an end of a partition wall extending partway through the first compound semiconductor layer in the thickness direction of the first compound semiconductor layer (a lower end of the partition wall, the end facing the first electrode) L3': the distance from the axis of the first light reflecting layer constituting the light emitting element to the orthogonal projection image of the partition wall onto the laminated structure (more specifically, the orthogonal projection image of the lower end of the partition wall) It is. [C01] The first light reflecting layer is formed on a base surface located on the first surface side of the first compound semiconductor layer, The base surface extends to a peripheral region surrounded by the plurality of light emitting elements; The light-emitting element array according to any one of [B01] to [B06], wherein the base surface is uneven and differentiable. [C02] The light-emitting element array according to [C01], wherein the base surface is smooth. [C03] 《Light-emitting element of the first configuration》 The light-emitting element array according to [C01] or [C02], wherein, when the second surface of the first compound semiconductor layer is used as a reference, a first portion of the base surface on which the first light reflecting layer is formed has an upwardly convex shape. [C04] "Light-emitting element of configuration 1-A" The light-emitting element array according to [C03], wherein the second portion of the base surface occupying the peripheral region has a downwardly convex shape when the second surface of the first compound semiconductor layer is taken as a reference. [C05] The light-emitting element array according to [C04], wherein the center of the first portion of the base surface is located on an apex (intersection) of a square lattice. [C06] The light-emitting element array according to [C04], wherein the center of the first portion of the base surface is located on a vertex (intersection) of an equilateral triangular lattice. [C07] "Light-emitting element having configuration 1-B" The light-emitting element array according to [C03], wherein, when the second surface of the first compound semiconductor layer is used as a reference, the second portion of the base surface occupying the peripheral region has a downward convex shape toward a center of the peripheral region, and an upward convex shape extending from the downward convex shape. [C08] When the distance from the second surface of the first compound semiconductor layer to the center of the first portion of the base surface is LL1 and the distance from the second surface of the first compound semiconductor layer to the center of the second portion of the base surface is LL2, LL2>LL1 The light-emitting element array according to [C07], [C09] When the radius of curvature of the center of the first portion of the base surface (i.e., the radius of curvature of the first light-reflecting layer) is R1 and the radius of curvature of the center of the second portion of the base surface is R2, R1>R2 The light-emitting element array according to [C07] or [C08], [C10] The light-emitting element array according to any one of [C07] to [C09], wherein the center of the first portion of the base surface is located on an apex (intersection) of a square lattice. [C11] The light-emitting element array according to [C10], wherein the center of the second portion of the base surface is located on an apex (intersection) of a square lattice. [C12] The light-emitting element array according to any one of [C07] to [C09], wherein the center of the first portion of the base surface is located on an apex (intersection) of an equilateral triangular lattice. [C13] The light-emitting element array according to [C12], wherein the center of the second portion of the base surface is located on an apex (intersection) of an equilateral triangular lattice. [C14] The radius of curvature R2 at the center of the second part of the base surface is 1×10 -6 m or more, preferably 3×10 -6 m or more, preferably 5×10 -6 The light-emitting element array according to any one of [C07] to [C13], wherein m is greater than or equal to [C15]《Light-emitting element having the 1-C configuration》 The light-emitting element array according to [C03], wherein the second portion of the base surface occupying the peripheral region has an annular convex shape surrounding the first portion of the base surface and a downwardly convex shape extending from the annular convex shape toward the first portion of the base surface, when the second surface of the first compound semiconductor layer is used as a reference. [C16] When the distance from the second surface of the first compound semiconductor layer to the center of the first portion of the base surface is LL1 and the distance from the second surface of the first compound semiconductor layer to the top of the annular convex shape of the second portion of the base surface is LL2', LL2'>LL1 The light-emitting element array according to [C15], which satisfies the following: [C17] When the radius of curvature of the center of the first portion of the base surface (i.e., the radius of curvature of the first light-reflecting layer) is R1 and the radius of curvature of the apex of the annular convex shape of the second portion of the base surface is R2', R1>R2' The light-emitting element array according to [C15] or [C16], which satisfies the following: [C18] The radius of curvature R2' of the apex of the annular convex shape of the second part of the base surface is 1×10 -6 m or more, preferably 3×10 -6m or more, preferably 5×10 -6 The light-emitting element array according to any one of [C15] to [C17], wherein m is greater than or equal to [C19] The light-emitting element array according to any one of [C07] to [C18], wherein a bump is provided on a portion of the second surface side of the second compound semiconductor layer facing the convex-shaped portion in the second part of the base surface. [C20] The light-emitting element array according to any one of [C04] to [C06], wherein a bump is provided on a portion of the second surface side of the second compound semiconductor layer facing the center of the first portion of the base surface. [C21] The light-emitting element array according to any one of [C01] to [C20], wherein the formation pitch of the light-emitting elements is 3 μm or more and 50 μm or less, preferably 5 μm or more and 30 μm or less, and more preferably 8 μm or more and 25 μm or less. [C22] The radius of curvature R1 of the center of the first portion of the base surface (i.e., the radius of curvature of the first light-reflecting layer) is 1×10 -5 m or more, preferably 3×10 -5 The light-emitting element array according to any one of [C01] to [C21], wherein m is greater than or equal to [C23] The light-emitting element array according to any one of [C01] to [C22], wherein the laminated structure is made of at least one material selected from the group consisting of GaN-based compound semiconductors, InP-based compound semiconductors, and GaAs-based compound semiconductors. [C24] Let the cavity length be L OR Then, 1×10 -5 m≦L OR The light-emitting element array according to any one of [C01] to [C23], which satisfies the following: [C25] A light-emitting element array according to any one of [C01] to [C24], wherein the figure drawn by the first part of the base surface when the base surface is cut by a virtual plane including the stacking direction of the laminated structure is part of a circle or part of a parabola. [C26]《Light-emitting element of the second configuration》 The light-emitting element array according to any one of [C01] to [C25], wherein the first surface of the first compound semiconductor layer constitutes a base surface. [C27]《Light-emitting element of the third configuration》 The light-emitting element array according to any one of [C01] to [C25], wherein a compound semiconductor substrate is disposed between the first surface of the first compound semiconductor layer and the first light reflecting layer, and the base surface is composed of a surface of the compound semiconductor substrate. [C28]《Light-emitting element of the fourth configuration》 The light-emitting element array according to any one of [C01] to [C25], wherein a substrate is disposed between the first surface of the first compound semiconductor layer and the first optical reflection layer, or a compound semiconductor substrate and a substrate are disposed between the first surface of the first compound semiconductor layer and the first optical reflection layer, and the base surface is composed of the surface of the substrate. [C29] The light-emitting element array according to [C28], wherein the material constituting the substrate is at least one material selected from the group consisting of transparent dielectric materials such as TiO2, Ta2O5, SiO2, silicone-based resins, and epoxy-based resins. [C30] The light-emitting element array according to any one of [C01] to [C29], wherein a first light reflecting layer is formed on a base surface. [C31] The light-emitting element array according to any one of [C01] to [C30], wherein the thermal conductivity value of the laminated structure is higher than the thermal conductivity value of the first light reflecting layer. [D01]《Light-emitting element array of the fifth configuration》 the second compound semiconductor layer is provided with a current injection region and a current non-injection region surrounding the current injection region; The shortest distance D from the center of gravity of the current injection area to the boundary between the current injection area and the non-current injection area CI The light-emitting element array according to any one of [C01] to [C31], which satisfies the following formula: D CI ≧ω0 / 2 however, ω0 2 ≡(λ0 / π){L OR (R1-L OR )} 1 / 2 Where: λ0: the wavelength of the desired light mainly emitted from the light-emitting element (oscillation wavelength) L OR :cavity length R1: radius of curvature of the center of the first portion of the base surface (i.e., radius of curvature of the first light-reflecting layer) [D02] A mode loss action portion provided on the second surface of the second compound semiconductor layer and constituting a mode loss action region acting to increase or decrease the oscillation mode loss; a second electrode formed on the second surface of the second compound semiconductor layer and on the mode loss active portion; and a first electrode electrically connected to the first compound semiconductor layer; It further comprises: The second light reflective layer is formed on the second electrode, the laminated structure includes a current injection region, a non-current injection inner region surrounding the current injection region, and a non-current injection outer region surrounding the non-current injection inner region; The light-emitting element array according to [D01], wherein an orthogonal projection image of the mode loss effect region and an orthogonal projection image of the current non-injection outer region are overlapped with each other. [D03] The radius r1 of the effective light reflecting area of ​​the first light reflecting layer is ω0≦r1≦20 ω0 The light-emitting element array according to [D01] or [D02], [D04]D CI The light-emitting element array according to any one of [D01] to [D03], which satisfies ≧ω0. [D05] R1≦1×10 -3 The light-emitting element array according to any one of [D01] to [D04], wherein m is satisfied. [E01] "Light-emitting element array of the sixth configuration" a mode loss action portion provided on the second surface of the second compound semiconductor layer and constituting a mode loss action region acting to increase or decrease the oscillation mode loss; a second electrode formed on the second surface of the second compound semiconductor layer and on the mode loss active portion; and a first electrode electrically connected to the first compound semiconductor layer; It further comprises: The second light reflective layer is formed on the second electrode, the laminated structure includes a current injection region, a non-current injection inner region surrounding the current injection region, and a non-current injection outer region surrounding the non-current injection inner region; The light-emitting element array according to any one of [C01] to [C31], wherein an orthogonal projection image of the mode loss effect region and an orthogonal projection image of the current non-injection outer region are overlapped with each other. [E02] The light-emitting element array according to [E01], wherein the current non-injection outer region is located below the mode loss effect region. [E03] When the area of ​​the projection image of the current-injected region is S1 and the area of ​​the projection image of the current-non-injected inner region is S2, 0.01≦S1 / (S1+S2)≦0.7 The light-emitting element array according to [E01] or [E02], [E04] The light-emitting element array according to any one of [E01] to [E03], wherein the current non-injection inner region and the current non-injection outer region are formed by ion implantation into the laminated structure. [E05] The light-emitting element array according to [E04], wherein the ion species is at least one kind of ion selected from the group consisting of boron, proton, phosphorus, arsenic, carbon, nitrogen, fluorine, oxygen, germanium and silicon. [E06] "Light-emitting element array of the sixth-B configuration" The light-emitting element array according to any one of [E01] to [E05], wherein the current-injection inner region and the current-injection outer region are formed by plasma irradiation of the second surface of the second compound semiconductor layer, or by ashing treatment of the second surface of the second compound semiconductor layer, or by reactive ion etching treatment of the second surface of the second compound semicondu...

Claims

1. a first compound semiconductor layer having a first surface and a second surface opposite to the first surface; an active layer facing the second surface of the first compound semiconductor layer; and a second compound semiconductor layer having a first surface facing the active layer and a second surface opposite to the first surface; A laminated structure in which a first light reflecting layer formed on the first surface side of the first compound semiconductor layer and having a convex shape extending in a direction away from the active layer; and a second light reflecting layer formed on the second surface side of the second compound semiconductor layer and having a flat shape; Equipped with a partition wall is formed so as to surround the first light reflecting layer and extend in a stacking direction of the stacked structure, The partition wall extends from the second surface side of the second compound semiconductor layer into the second compound semiconductor layer and the active layer, and further extends into the first compound semiconductor layer to a midpoint in a thickness direction of the first compound semiconductor layer. Light emitting element.

2. The light-emitting device according to claim 1 , wherein the partition is made of a material that does not transmit light generated in the active layer.

3. The light-emitting device according to claim 1 , wherein the partition is made of a material that reflects light generated in the active layer.

4. The thermal conductivity of the material constituting the first compound semiconductor layer is defined as TC １ The thermal conductivity of the material constituting the partition wall is TC ０ When 1×10 －１ ≦TC １ / TC ０ ≦1×10 ２ The light emitting device according to claim 1 , which satisfies the following:

5. The linear expansion coefficient of the material constituting the first compound semiconductor layer is defined as CTE. １ The linear expansion coefficient of the material constituting the partition wall is CTE ０ When |CTE ０ -CTE １ |≦1×10 －４ / K The light emitting device according to claim 1 , which satisfies the following:

6. the partition is made of a solder material; The light-emitting device according to claim 1 , wherein a part of the partition is exposed on an outer surface of the light-emitting device.

7. The light-emitting device according to claim 1 , wherein a side surface of the partition narrows in a direction from the first surface side of the first compound semiconductor layer toward the second surface side of the second compound semiconductor layer.

8. A light emitting element array including a plurality of light emitting elements arranged in an array, Each of the light-emitting elements is a first compound semiconductor layer having a first surface and a second surface opposite to the first surface; an active layer facing the second surface of the first compound semiconductor layer; and a second compound semiconductor layer having a first surface facing the active layer and a second surface opposite to the first surface; A laminated structure in which a first light reflecting layer formed on the first surface side of the first compound semiconductor layer and having a convex shape extending in a direction away from the active layer; and a second light reflecting layer formed on the second surface side of the second compound semiconductor layer and having a flat shape; Equipped with In each of the light-emitting elements, a partition wall is formed so as to surround the first light reflecting layer and extend in a stacking direction of the stacked structure, The partition wall extends from the second surface side of the second compound semiconductor layer into the second compound semiconductor layer and the active layer, and further extends into the first compound semiconductor layer to a midpoint in a thickness direction of the first compound semiconductor layer. Light emitting element array.

Images