Semiconductor inspection device and semiconductor inspection method

Abstract

To provide a semiconductor inspection device and a semiconductor inspection method capable of performing a contact check without separately mounting a circuit or a component for the contact check.SOLUTION: A semiconductor inspection device inspects an element to be measured 1 having a capacitance between a first electrode and a second electrode. The semiconductor inspection device includes: a first measurement terminal 4 for contacting a first electrode; a second measurement terminal 5 for contacting a second electrode; a power supply part 7 for applying a voltage square wave between the first measurement terminal 4 and the second measurement terminal 5; a differential probe 8 for measuring a voltage signal that is a potential difference between the first measurement terminal 4 and the second measurement terminal 5; a waveform measuring instrument 9 for converting the voltage signal into voltage waveform data by analog-to-digital conversion; and an analysis part 11 for analyzing the voltage waveform data and determining whether the contacts between the first measurement terminal 4 and the second measurement terminal 5 are normal.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a semiconductor inspection apparatus and a semiconductor inspection method. [Background technology]

[0002] In order to improve the efficiency of electrical characteristic tests of semiconductor elements, it is necessary to ensure that the element under test is not defective and that the contact between the element under test and the inspection device is not incomplete. Therefore, before the test, the presence or absence of a contact abnormality was confirmed by measuring the current flowing through the element under test to which a forward bias voltage was applied (see, for example, Patent Document 1). In conventional contact checks, the presence or absence of an abnormality was confirmed based on the two values ​​of whether or not a voltage is applied and whether or not a current flows, without looking at the waveforms of the voltage or current. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 07-174814 Summary of the Invention [Problem to be solved by the invention]

[0004] Conventionally, in order to measure the current flowing through the device under test, it was necessary to insert a resistor into the test circuit and to install a separate circuit for contact check. This increases the circuit length and also increases the parasitic inductive and capacitive components. This affects the switching characteristics of the semiconductor device, which is not desirable for testing equipment that tests the dynamic characteristics of semiconductor devices. In addition, providing a circuit just for contact check increases the cost of the equipment.

[0005] The present disclosure has been made to solve the problems described above, and its purpose is to provide a semiconductor inspection device and a semiconductor inspection method that can perform a contact check without installing a separate circuit or component for the contact check. [Means for solving the problem]

[0006] A semiconductor inspection apparatus according to the present disclosure is a semiconductor inspection apparatus for inspecting a device under test having a capacitance between a first electrode and a second electrode, and includes a first measurement terminal for contacting the first electrode, a second measurement terminal for contacting the second electrode, a power supply unit for applying a voltage rectangular wave between the first measurement terminal and the second measurement terminal, a differential probe for measuring a voltage signal which is a potential difference between the first measurement terminal and the second measurement terminal, a waveform measurement device for analog-to-digital conversion of the voltage signal into voltage waveform data, and an analysis unit for waveform analyzing the voltage waveform data to determine whether or not the contact between the first measurement terminal and the second measurement terminal is normal. The analysis unit determines a second voltage to be a voltage after a set time has elapsed since the time when the voltage waveform data reaches a first voltage during a voltage rise, and determines that a contact is abnormal if the second voltage is greater than a judgment standard, and determines that a contact is normal if the second voltage is less than the judgment standard, the first voltage being greater than a minimum output voltage and less than a maximum output voltage of the power supply unit, the set time being shorter than a time taken for the voltage waveform data to rise from the first voltage to the maximum output voltage when the contact is normal, and the judgment standard being greater than the second voltage and less than the maximum output voltage when the contact is normal. It is characterized by:

[0007] A semiconductor inspection method according to the present disclosure is a semiconductor inspection method for inspecting a device under test having a capacitance between a first electrode and a second electrode, the method including the steps of: contacting a first measurement terminal with the first electrode, contacting a second measurement terminal with the second electrode, and applying a voltage square wave between the first measurement terminal and the second measurement terminal; measuring a voltage signal which is a potential difference between the first measurement terminal and the second measurement terminal; converting the voltage signal into voltage waveform data by analog-to-digital conversion; and analyzing the voltage waveform data to determine whether or not the contact between the first measurement terminal and the second measurement terminal is normal. a second voltage is a voltage obtained after a set time has elapsed since the time when the voltage waveform data reaches a first voltage during a voltage rise; if the second voltage is greater than a judgment standard, it is judged that a contact is abnormal; if the second voltage is less than the judgment standard, it is judged that the contact is normal; the first voltage is greater than a minimum output voltage and less than a maximum output voltage of the power supply unit; the set time is shorter than a time required for the voltage waveform data to rise from the first voltage to the maximum output voltage when the contact is normal; and the judgment standard is greater than the second voltage and less than the maximum output voltage when the contact is normal. It is characterized by: Effect of the Invention

[0008] In the present disclosure, voltage waveform data is obtained from the voltage between the measurement terminals that contact the two electrodes of the device under test. Because the device under test has capacitance between the electrodes, the waveform of the voltage waveform data differs depending on whether the contact is normal or not. Therefore, a contact check is performed by performing waveform analysis on the voltage waveform data. This makes it possible to perform a contact check without separately installing a circuit or component for the contact check. [Brief description of the drawings]

[0009] [Figure 1] 1 is a block diagram showing a semiconductor inspection device according to a first embodiment. [Diagram 2] 4 is a flowchart of a semiconductor inspection method according to the first embodiment. [Diagram 3] FIG. 11 is a diagram showing voltage waveform data when the contact is normal in the first embodiment. [Figure 4] FIG. 11 is a diagram showing voltage waveform data in the case of a contact abnormality in the first embodiment. [Diagram 5] FIG. 11 is a diagram showing voltage waveform data when the contact is normal in the second embodiment. [Figure 6] FIG. 11 is a diagram showing voltage waveform data in the case of a contact abnormality in the second embodiment. [Figure 7] FIG. 13 is a diagram showing voltage waveform data when the contact is normal in the third embodiment. [Figure 8] FIG. 13 is a diagram showing voltage waveform data in the case of a contact abnormality in the third embodiment. [Figure 9] FIG. 13 is a diagram showing voltage waveform data when the contact is normal in the fourth embodiment. [Figure 10] FIG. 13 is a diagram showing voltage waveform data in the case of a contact abnormality in the fourth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] A semiconductor inspection device and a semiconductor inspection method according to an embodiment will be described with reference to the drawings. The same or corresponding components are designated by the same reference numerals, and repeated description may be omitted.

[0011] Embodiment 1 1 is a block diagram showing a semiconductor inspection device according to a first embodiment. The semiconductor inspection device is an inspection device that performs a characteristic test on the device under test 1 after determining the contact state with the device under test 1. The device under test 1 is an IGBT, and has a capacitance between a gate electrode and an emitter electrode. However, the device under test 1 is not limited to an IGBT, and may be a MOSFET or a Diode, etc., as long as it is a semiconductor element having a capacitance between two electrodes. The semiconductor inspection device includes an inspection unit 2 and a waveform analysis unit 3.

[0012] The inspection unit 2 has a first measurement terminal 4 for contacting the gate electrode of the device under test 1, a second measurement terminal 5 for contacting the emitter electrode of the device under test 1, and a power supply unit 7 connected to the first measurement terminal 4 and the second measurement terminal 5 via wiring 6. The power supply unit 7 applies a voltage square wave to the first measurement terminal 4 and the second measurement terminal 5. That is, the power supply unit 7 applies a voltage square wave between the gate and emitter of the device under test 1 via the first measurement terminal 4 and the second measurement terminal 5 with the emitter potential as a reference.

[0013] Here, the minimum necessary configuration for carrying out this embodiment is shown as the inspection unit 2. However, an actual semiconductor inspection device includes other circuits, tools, etc. for carrying out characteristic tests between the power supply unit 7 and the device under test 1.

[0014] The waveform analysis unit 3 has a differential probe 8, a waveform measuring instrument 9, a storage unit 10, and an analysis unit 11. The differential probe 8 is connected to the first measurement terminal 4 and the second measurement terminal 5, and measures a voltage signal which is a potential difference between the first measurement terminal 4 and the second measurement terminal 5. The differential probe 8 may be connected to the first measurement terminal 4 and the second measurement terminal 5 via a jig or wiring. The waveform measuring instrument 9 is an oscilloscope or a digitizer that performs analog-to-digital conversion of the voltage signal input from the differential probe 8 and converts it into waveform data.

[0015] The voltage waveform data output from the waveform measuring device 9 is numerical data in which time data indicating the measurement time and the voltage value at that time are listed in chronological order. The file format of the voltage waveform data is not limited as long as it meets these specifications, and depends on the specifications of the analysis software. In addition, preprocessing such as offsetting or moving averaging of the voltage waveform may be performed before waveform analysis.

[0016] The memory unit 10 and the analysis unit 11 are composed of a PC. The memory unit 10 temporarily stores the voltage waveform data transmitted from the waveform measurement instrument 9. The analysis unit 11 analyzes the voltage waveform data using analysis software executed on the PC. In the waveform analysis, the voltage waveform data is numerically calculated using a pre-set calculation method, and the output analysis result is judged to determine whether or not the contact of the first measurement terminal 4 and the second measurement terminal 5 with the electrodes of the measured element 1 is normal. If the contact is judged to be normal, the analysis unit 11 performs a characteristic inspection. The memory unit 10 stores the waveform analysis results and the characteristic test results. In this way, the waveform analysis unit 3 performs both the waveform analysis and the characteristic inspection.

[0017] 2 is a flow chart of the semiconductor inspection method according to the first embodiment. First, analysis conditions are set (step S1). Next, the power supply unit 7 applies a voltage to the device under test 1 via the first measurement terminal 4 and the second measurement terminal 5 (step S2). Next, the waveform measurement device 9 measures the voltage waveform between the terminals (step S3). The analysis unit 11 performs waveform analysis using the obtained voltage waveform data (step S4) and judges the contact state (step S5). If the analysis unit 11 judges that the contact is normal, it performs a characteristic test on the device under test 1 (step S6) and ends the test. If the contact is judged to be abnormal, the analysis unit 11 outputs an abnormality result (step S7) and ends the test without performing a characteristic test.

[0018] Next, a method for determining the contact state of the first measurement terminal 4 and the second measurement terminal 5 with respect to the electrodes of the device under test 1 will be described. FIG. 3 is a diagram showing voltage waveform data when the contact is normal in the first embodiment. FIG. 4 is a diagram showing voltage waveform data when the contact is abnormal in the first embodiment. The vertical axis represents the voltage between the first measurement terminal 4 and the second measurement terminal 5, and the horizontal axis represents time. When the power supply unit 7 applies a voltage square wave of the maximum output voltage E between the gate and emitter of the device under test 1 via the first measurement terminal 4 and the second measurement terminal 5, a voltage waveform of the maximum output voltage E is observed between the first measurement terminal 4 and the second measurement terminal 5.

[0019] The analysis unit 11 searches for the measured voltage closest to the set voltage V1 from the start point of the voltage waveform data, and sets the time at V1 as T1. V1 is set arbitrarily within a range greater than the minimum output voltage of the power supply unit 7 and less than the maximum output voltage E. If the device under test 1 is short-circuited or if there is an abnormality in the inspection circuit itself that causes a short circuit, no voltage waveform data will be obtained. Therefore, if the voltage waveform data does not reach V1 when the voltage rises, the analysis unit 11 determines that a short-circuit state exists.

[0020] Analysis unit 11 sets T2 as the time a given set time T after time T1 when the voltage waveform data reaches V1 during voltage rise. The measured voltage at time T2 is set to V2. The set time T is set arbitrarily so as to be shorter than the time it takes for the voltage waveform data to rise from voltage V1 to the maximum output voltage E when the contact is normal. These settings may be made in step S1.

[0021] Since the device under test 1 has a capacitance between the gate and emitter, when the contact is normal, the capacitance is charged according to the time constant. For this reason, as shown in Figure 3, the rise time of the terminal voltage becomes longer for the output voltage waveform of the power supply unit 7. T2 is the time when the voltage is halfway up. V2 is a value smaller than E.

[0022] On the other hand, if the test circuit is open, or if there is a contact abnormality in which the first measurement terminal 4 or the second measurement terminal 5 is not in contact with the electrode of the device under test 1, the capacitance of the device under test 1 is not connected. Therefore, as shown in Figure 4, the rise time of the voltage between the terminals becomes shorter, and the voltage waveform data becomes a square wave similar to the output voltage waveform of the power supply unit 7. Since the voltage rise has finished at the time T2, V2 becomes a value relatively close to E.

[0023] Therefore, when V2 is larger than the judgment standard, the analysis unit 11 judges it to be in an open state, i.e., a contact abnormality, and when V2 is smaller than the judgment standard, it judges it to be in a normal contact state. The judgment standard is set arbitrarily within a range larger than V2 for a normal contact and smaller than the maximum output voltage E.

[0024] As described above, in this embodiment, voltage waveform data is obtained from the voltage between the measurement terminals that are in contact with the two electrodes of the device under test 1. Because the device under test 1 has capacitance between the electrodes, the waveform of the voltage waveform data differs depending on whether the contact is normal or not. Therefore, a contact check is performed by performing waveform analysis on the voltage waveform data. This makes it possible to perform a contact check without separately installing a circuit or component for the contact check.

[0025] Furthermore, in the conventional technology, even if a voltage is unintentionally applied while the device is in contact with something other than the electrode of the device under test 1, the contact is determined to be normal. On the other hand, in the present embodiment, although a voltage is applied, the capacitance characteristic is not visible in the voltage waveform data, so the contact can be determined to be abnormal.

[0026] In this embodiment, the gate-emitter voltage V GE The voltage waveform is analyzed, but the collector-emitter voltage V CEThe voltage waveform of the contact may be analyzed. Although the rising portion of the voltage waveform is analyzed, the falling portion of the voltage waveform where the capacitance characteristic is observed may be the analysis range. Moreover, by setting multiple set times T, the analysis value can be increased and compared with multiple judgment standards. Moreover, a normal waveform may be stored in the storage unit 10, and the contact state may be judged by comparing the measured voltage waveform with the normal waveform.

[0027] In addition, repeated application of voltage between the electrodes of the measured element 1 having a capacitance characteristic may cause the rise time of the voltage waveform to vary due to the influence of the variation in residual charge caused by charging and discharging. Therefore, as a modification of the first embodiment, the contact check may be performed by evaluating the standard deviation σ(V2) of V2. That is, the power supply unit 7 applies a plurality of voltage rectangular waves between the terminals. The analysis unit 11 obtains V2 at the voltage rise time of each of the plurality of voltage rectangular waves and calculates the standard deviation σ(V2) of V2 for the plurality of times. If the standard deviation σ(V2) of V2 is smaller than the judgment standard, it is judged that the contact is abnormal, and if it is larger than the judgment standard, it is judged that the contact is normal. Even if the difference in the voltage waveform between normal and abnormal contact due to the capacitance characteristic of the measured element 1 is difficult to see, the detection sensitivity can be improved by the difference in standard deviation.

[0028] Embodiment 2 Fig. 5 is a diagram showing voltage waveform data when the contact is normal in the second embodiment. Fig. 6 is a diagram showing voltage waveform data when the contact is abnormal in the second embodiment.

[0029] First, the analysis unit 11 searches for the measured voltage closest to the set voltage V1 from the start point of the voltage waveform data, as in the first embodiment, and sets the time at V1 to T1. If V1 cannot be detected, it is determined that the short circuit state exists. Next, it detects the measured voltage closest to the set voltage V2, and sets the time at V2 to T2. V2 is set to be a value greater than V1 and smaller than E. Next, it calculates the time difference ΔT between T2 and T1, and the potential difference ΔV between V2 and V1, and calculates the slope dV / dT of the voltage waveform data at the time of voltage rise by dividing ΔV by ΔT. If the slope dV / dT is greater than an arbitrary judgment standard, it is determined that the contact is abnormal, and if it is less than the judgment standard, it is determined that the contact is normal. In this way, the contact check can also be performed by evaluating the slope of the rising part of the voltage waveform.

[0030] 5, 6, etc. show simplified linear data as voltage waveform data. However, the waveform may have curves or distortions due to differences in capacitance characteristics depending on the device under test 1. Therefore, the detection sensitivity can be improved by presetting the parts where the slope of the voltage waveform is likely to differ.

[0031] As a modification of the second embodiment, the contact check may be performed by evaluating the standard deviation of the slope. That is, the analysis unit 11 calculates the slope of the voltage waveform data at the voltage rising edge of each of the multiple voltage rectangular waves, calculates the standard deviation of the slopes for the multiple times, and determines that the contact is abnormal if the standard deviation of the slope is smaller than the judgment standard, and determines that the contact is normal if it is larger than the judgment standard. Here, since V2 detected in the contact abnormality is a value relatively close to the power supply voltage E, if the variation in the power supply voltage E is large, the standard deviation of V2 also becomes large. It is desirable that the standard deviation of V2 in the case of normal contact is larger than that of the contact abnormality, but there is a tendency that the difference is difficult to be seen due to the above-mentioned influence. In contrast, by evaluating the standard deviation of the slope, the above-mentioned influence is less likely to be exerted, and the detection sensitivity can be improved.

[0032] Third embodiment Fig. 7 is a diagram showing voltage waveform data when the contact is normal in the third embodiment. Fig. 8 is a diagram showing voltage waveform data when the contact is abnormal in the third embodiment.

[0033] In this embodiment, the analysis unit 11 calculates the maximum differential value V'max by time-differentiating the voltage waveform data at the time of voltage rise. If V'max falls below an arbitrary short-circuit judgment standard, it is judged to be in a short-circuit state, if V'max exceeds an arbitrary open-circuit judgment standard, it is judged to be a contact abnormality, and if V'max is between the short-circuit judgment standard and the open-circuit judgment standard, it is judged to be a normal contact. In this way, contact check can also be performed by comparing the difference in slope of the voltage waveform with the maximum differential value. Furthermore, since there is no need to detect an arbitrary set voltage as in the first and second embodiments, software processing is simplified. Furthermore, since it is necessary to set only the judgment standard, it is easy to set analysis conditions.

[0034] In addition, there is a possibility that multiple portions where the waveform has a steep slope are generated in the voltage waveform data showing the capacitance characteristic between the electrodes of the measured element 1. Therefore, as a modification of the third embodiment, the contact check may be performed by evaluating the standard deviation of the maximum differential value. That is, the analysis unit 11 calculates the maximum differential value of the voltage waveform data at each voltage rise of multiple voltage rectangular waves, calculates the standard deviation of the multiple maximum differential values, and judges the state to be short-circuited when the standard deviation of the maximum differential value falls below the short-circuit judgment standard, judges the state to be contact abnormal when the standard deviation exceeds the open judgment standard, and judges the state to be contact normal when the standard deviation is between the short-circuit judgment standard and the open judgment standard. Since the standard deviation of the maximum differential value becomes relatively large, the detection sensitivity is improved.

[0035] Fourth embodiment Fig. 9 is a diagram showing voltage waveform data when the contact is normal in the fourth embodiment. Fig. 10 is a diagram showing voltage waveform data when the contact is abnormal in the fourth embodiment.

[0036] First, the analysis unit 11 detects arbitrary set voltages V1 and V2 of the voltage waveform data at the time of voltage rise as in the second embodiment, and sets the respective times T1 and T2. If V1 cannot be detected, it is determined to be in a short-circuit state. Next, the voltage waveform data is integrated over time in the section from T1 to T2. If the voltage integral value is smaller than an arbitrary judgment standard, it is determined to be a contact abnormality, and if it is larger than the judgment standard, it is determined to be a contact normal state. In this way, the contact check can also be performed by comparing the difference in slope of the voltage waveform with the integral value. Furthermore, if the voltage waveform contains a surge or noise, the maximum differential value becomes high, which may lead to an erroneous judgment in the third embodiment, but by making a judgment using the integral value as in this embodiment, the above influence is reduced.

[0037] As a modification of the fourth embodiment, the contact check may be performed by evaluating the standard deviation of the voltage integral value. That is, the analysis unit 11 calculates the voltage integral value of the voltage waveform data at the voltage rising time of each of the multiple voltage rectangular waves, calculates the standard deviation of the multiple voltage integral values, and determines that the contact is abnormal if the standard deviation of the voltage integral value is smaller than the judgment standard, and determines that the contact is normal if it is larger than the judgment standard. If the voltage waveform contains a surge or noise, the standard deviation of the maximum differential value becomes large in both the normal and abnormal contacts, and the detection sensitivity decreases in the modification of the third embodiment. On the other hand, the above-mentioned influence is relatively small in the standard deviation of the voltage integral value.

[0038] The measured element 1 is not limited to those formed of silicon, but may be those formed of wide band gap semiconductors having a larger band gap than silicon. Wide band gap semiconductors are, for example, silicon carbide, gallium nitride-based materials, or diamond. A semiconductor chip formed of such a wide band gap semiconductor has high voltage resistance and allowable current density, and can be miniaturized. By using this miniaturized semiconductor chip, a semiconductor device incorporating this semiconductor chip can also be miniaturized and highly integrated. In addition, since the semiconductor chip has high heat resistance, the heat dissipation fins of the heat sink can be miniaturized, and the water-cooled part can be air-cooled, so the semiconductor device can be further miniaturized. In addition, since the power loss of the semiconductor chip is low and highly efficient, the efficiency of the semiconductor device can be increased. [Explanation of symbols]

[0039] 1 Element to be measured, 4 First measurement terminal, 5 Second measurement terminal, 7 Power supply unit, 8 Differential probe, 9 Waveform measuring instrument, 11 Analysis unit

Claims

1. A semiconductor inspection apparatus for inspecting a device under test having a capacitance between a first electrode and a second electrode, comprising: a first measurement terminal for contacting the first electrode; a second measurement terminal for contacting the second electrode; a power supply unit that applies a voltage rectangular wave between the first measurement terminal and the second measurement terminal; a differential probe that measures a voltage signal that is a potential difference between the first measurement terminal and the second measurement terminal; a waveform measuring device that converts the voltage signal into voltage waveform data by analog-to-digital conversion; an analysis unit that performs waveform analysis on the voltage waveform data to determine whether or not contact between the first measurement terminal and the second measurement terminal is normal; the analysis unit determines a voltage after a set time has elapsed since the time when the voltage waveform data reaches a first voltage during a voltage rise as a second voltage, and determines that a contact is abnormal if the second voltage is greater than a judgment standard, and determines that a contact is normal if the second voltage is less than the judgment standard; the first voltage is greater than a minimum output voltage of the power supply unit and less than a maximum output voltage of the power supply unit; the set time is shorter than the time it takes for the voltage waveform data to rise from the first voltage to the maximum output voltage when the contact is normal, The semiconductor inspection device according to claim 1, wherein the judgment standard is greater than the second voltage when the contact is normal and less than the maximum output voltage.

2. A semiconductor inspection device for inspecting a test element having a capacitance between a first electrode and a second electrode, comprising: a first measurement terminal for contacting the first electrode; a second measurement terminal for contacting the second electrode; a power supply unit that applies a voltage rectangular wave between the first measurement terminal and the second measurement terminal; a differential probe that measures a voltage signal that is a potential difference between the first measurement terminal and the second measurement terminal; a waveform measuring device that converts the voltage signal into voltage waveform data by analog-to-digital conversion; an analysis unit that performs waveform analysis on the voltage waveform data to determine whether or not contact between the first measurement terminal and the second measurement terminal is normal; the power supply unit applies a plurality of voltage rectangular waves between the first measurement terminal and the second measurement terminal; the analysis unit determines a second voltage to be a voltage a set time after a time when the voltage waveform data reaches a first voltage during voltage rise of each of the plurality of voltage rectangular waves, calculates a standard deviation of the second voltages for a plurality of times, and determines that a contact is abnormal if the standard deviation of the second voltage is smaller than a judgment standard, and determines that a contact is normal if the standard deviation is larger than the judgment standard.

3. 3. The semiconductor inspection device according to claim 1, wherein the analysis section determines that a short circuit has occurred if the voltage waveform data does not reach the first voltage at the time of voltage rise.

4. A semiconductor inspection device for inspecting a test element having a capacitance between a first electrode and a second electrode, comprising: a first measurement terminal for contacting the first electrode; a second measurement terminal for contacting the second electrode; a power supply unit that applies a voltage rectangular wave between the first measurement terminal and the second measurement terminal; a differential probe that measures a voltage signal that is a potential difference between the first measurement terminal and the second measurement terminal; a waveform measuring device that converts the voltage signal into voltage waveform data by analog-to-digital conversion; an analysis unit that performs waveform analysis on the voltage waveform data to determine whether or not contact between the first measurement terminal and the second measurement terminal is normal; the power supply unit applies a plurality of voltage rectangular waves between the first measurement terminal and the second measurement terminal; The analysis unit calculates a slope of the voltage waveform data at each voltage rise of the multiple voltage rectangular waves, calculates a standard deviation of the slope for multiple times, and determines that a contact is abnormal if the standard deviation of the slope is smaller than a judgment standard, and determines that a contact is normal if the standard deviation of the slope is larger than the judgment standard.

5. A semiconductor inspection device for inspecting a test element having a capacitance between a first electrode and a second electrode, comprising: a first measurement terminal for contacting the first electrode; a second measurement terminal for contacting the second electrode; a power supply unit that applies a voltage rectangular wave between the first measurement terminal and the second measurement terminal; a differential probe that measures a voltage signal that is a potential difference between the first measurement terminal and the second measurement terminal; a waveform measuring device that converts the voltage signal into voltage waveform data by analog-to-digital conversion; an analysis unit that performs waveform analysis on the voltage waveform data to determine whether or not contact between the first measurement terminal and the second measurement terminal is normal; The semiconductor inspection device is characterized in that the analysis unit calculates a maximum differential value of the voltage waveform data at the time of voltage rise, and determines a short circuit state if the maximum differential value is below a short circuit judgment standard, determines a contact abnormality if the maximum differential value exceeds an open circuit judgment standard, and determines a normal contact if the maximum differential value is between the short circuit judgment standard and the open circuit judgment standard.

6. A semiconductor inspection device for inspecting a test element having a capacitance between a first electrode and a second electrode, comprising: a first measurement terminal for contacting the first electrode; a second measurement terminal for contacting the second electrode; a power supply unit that applies a voltage rectangular wave between the first measurement terminal and the second measurement terminal; a differential probe that measures a voltage signal that is a potential difference between the first measurement terminal and the second measurement terminal; a waveform measuring device that converts the voltage signal into voltage waveform data by analog-to-digital conversion; an analysis unit that performs waveform analysis on the voltage waveform data to determine whether or not contact between the first measurement terminal and the second measurement terminal is normal; the power supply unit applies a plurality of voltage rectangular waves between the first measurement terminal and the second measurement terminal; the analysis unit calculates a maximum differential value of the voltage waveform data at each voltage rise of the multiple voltage rectangular waves, calculates a standard deviation of the maximum differential values ​​for multiple times, and determines that a contact is abnormal if the standard deviation of the maximum differential values ​​is smaller than a judgment standard, and determines that a contact is normal if the standard deviation is larger than the judgment standard.

7. A semiconductor inspection device for inspecting a test element having a capacitance between a first electrode and a second electrode, comprising: a first measurement terminal for contacting the first electrode; a second measurement terminal for contacting the second electrode; a power supply unit that applies a voltage rectangular wave between the first measurement terminal and the second measurement terminal; a differential probe that measures a voltage signal that is a potential difference between the first measurement terminal and the second measurement terminal; a waveform measuring device that converts the voltage signal into voltage waveform data by analog-to-digital conversion; an analysis unit that performs waveform analysis on the voltage waveform data to determine whether or not contact between the first measurement terminal and the second measurement terminal is normal; The analysis unit calculates a voltage integral value of the voltage waveform data at the time of voltage rise, and judges that a contact is abnormal if the voltage integral value is smaller than a judgment standard, and judges that a contact is normal if the voltage integral value is larger than the judgment standard.

8. A semiconductor inspection device for inspecting a test element having a capacitance between a first electrode and a second electrode, comprising: a first measurement terminal for contacting the first electrode; a second measurement terminal for contacting the second electrode; a power supply unit that applies a voltage rectangular wave between the first measurement terminal and the second measurement terminal; a differential probe that measures a voltage signal that is a potential difference between the first measurement terminal and the second measurement terminal; a waveform measuring device that converts the voltage signal into voltage waveform data by analog-to-digital conversion; an analysis unit that performs waveform analysis on the voltage waveform data to determine whether or not contact between the first measurement terminal and the second measurement terminal is normal; the power supply unit applies a plurality of voltage rectangular waves between the first measurement terminal and the second measurement terminal; The analysis unit calculates a voltage integral value of the voltage waveform data at each voltage rise of the multiple voltage rectangular waves, calculates a standard deviation of the voltage integral values ​​for multiple times, and determines that a contact is abnormal if the standard deviation of the voltage integral values ​​is smaller than a judgment standard, and determines that a contact is normal if the standard deviation is larger than the judgment standard.

9. 9. The semiconductor inspection apparatus according to claim 1, wherein the analysis section performs a characteristic inspection of the device under test when it is determined that the contact is normal.

10. 1. A semiconductor inspection method for inspecting a device under test having a capacitance between a first electrode and a second electrode, comprising: a step of contacting a first measurement terminal with the first electrode, contacting a second measurement terminal with the second electrode, and applying a voltage square wave between the first measurement terminal and the second measurement terminal by a power supply unit; measuring a voltage signal that is a potential difference between the first measurement terminal and the second measurement terminal; A step of converting the voltage signal into voltage waveform data by analog-to-digital conversion; and a step of determining whether or not contact between the first measurement terminal and the second measurement terminal is normal by an analysis unit analyzing the voltage waveform data, a voltage after a set time has elapsed since the time when the voltage waveform data reaches a first voltage during a voltage rise is set as a second voltage, and if the second voltage is greater than a judgment standard, it is judged that a contact is abnormal, and if the second voltage is less than the judgment standard, it is judged that a contact is normal; the first voltage is greater than a minimum output voltage of the power supply unit and less than a maximum output voltage of the power supply unit; the set time is shorter than the time it takes for the voltage waveform data to rise from the first voltage to the maximum output voltage when the contact is normal, The semiconductor inspection method according to claim 1, wherein the judgment standard is greater than the second voltage when the contact is normal and less than the maximum output voltage.

11. A semiconductor inspection method for inspecting a test element having a capacitance between a first electrode and a second electrode, comprising: a step of contacting a first measurement terminal with the first electrode, contacting a second measurement terminal with the second electrode, and applying a voltage square wave between the first measurement terminal and the second measurement terminal by a power supply unit; measuring a voltage signal that is a potential difference between the first measurement terminal and the second measurement terminal; A step of converting the voltage signal into voltage waveform data by analog-to-digital conversion; and a step of determining whether or not contact between the first measurement terminal and the second measurement terminal is normal by an analysis unit analyzing the voltage waveform data, Applying a plurality of voltage square waves between the first measurement terminal and the second measurement terminal; a second voltage is a voltage a set time after the time when the voltage waveform data reaches a first voltage during the voltage rise of each of the plurality of voltage rectangular waves, a standard deviation of the second voltages for a plurality of times is calculated, and if the standard deviation of the second voltage is smaller than a judgment standard, a contact abnormality is judged, and if the standard deviation is larger than the judgment standard, a contact normal is judged.

12. 12. The semiconductor inspection method according to claim 10, wherein if the voltage waveform data does not reach the first voltage at the time of voltage rise, it is determined that a short circuit has occurred.

13. A semiconductor inspection method for inspecting a test element having a capacitance between a first electrode and a second electrode, comprising: a step of contacting a first measurement terminal with the first electrode, contacting a second measurement terminal with the second electrode, and applying a voltage square wave between the first measurement terminal and the second measurement terminal by a power supply unit; measuring a voltage signal that is a potential difference between the first measurement terminal and the second measurement terminal; A step of converting the voltage signal into voltage waveform data by analog-to-digital conversion; and a step of determining whether or not contact between the first measurement terminal and the second measurement terminal is normal by an analysis unit analyzing the voltage waveform data, Applying a plurality of voltage square waves between the first measurement terminal and the second measurement terminal; a semiconductor inspection method comprising: calculating a slope of the voltage waveform data at each voltage rise of the plurality of voltage rectangular waves; calculating a standard deviation of the slope for a plurality of times; and judging the contact to be abnormal if the standard deviation of the slope is smaller than a judgment standard; and judging the contact to be normal if the standard deviation of the slope is larger than the judgment standard.

14. A semiconductor inspection method for inspecting a test element having a capacitance between a first electrode and a second electrode, comprising: a step of contacting a first measurement terminal with the first electrode, contacting a second measurement terminal with the second electrode, and applying a voltage square wave between the first measurement terminal and the second measurement terminal by a power supply unit; measuring a voltage signal that is a potential difference between the first measurement terminal and the second measurement terminal; A step of converting the voltage signal into voltage waveform data by analog-to-digital conversion; and a step of determining whether or not contact between the first measurement terminal and the second measurement terminal is normal by an analysis unit analyzing the voltage waveform data, a maximum differential value of the voltage waveform data at the time of voltage rise is calculated, and if the maximum differential value is below a short circuit judgment standard, a short circuit state is judged to exist, if the maximum differential value exceeds an open circuit judgment standard, a contact abnormality is judged to exist, and if the maximum differential value is between the short circuit judgment standard and the open circuit judgment standard, a contact normality is judged.

15. A semiconductor inspection method for inspecting a test element having a capacitance between a first electrode and a second electrode, comprising: a step of contacting a first measurement terminal with the first electrode, contacting a second measurement terminal with the second electrode, and applying a voltage square wave between the first measurement terminal and the second measurement terminal by a power supply unit; measuring a voltage signal that is a potential difference between the first measurement terminal and the second measurement terminal; A step of converting the voltage signal into voltage waveform data by analog-to-digital conversion; and a step of determining whether or not contact between the first measurement terminal and the second measurement terminal is normal by an analysis unit analyzing the voltage waveform data, Applying a plurality of voltage square waves between the first measurement terminal and the second measurement terminal; a maximum differential value of the voltage waveform data at each voltage rise of the plurality of voltage rectangular waves, a standard deviation of the maximum differential values ​​for a plurality of times is calculated, and if the standard deviation of the maximum differential values ​​is smaller than a judgment standard, the contact is judged to be abnormal, and if the standard deviation is larger than the judgment standard, the contact is judged to be normal.

16. A semiconductor inspection method for inspecting a test element having a capacitance between a first electrode and a second electrode, comprising: a step of contacting a first measurement terminal with the first electrode, contacting a second measurement terminal with the second electrode, and applying a voltage square wave between the first measurement terminal and the second measurement terminal by a power supply unit; measuring a voltage signal that is a potential difference between the first measurement terminal and the second measurement terminal; A step of converting the voltage signal into voltage waveform data by analog-to-digital conversion; and a step of determining whether or not contact between the first measurement terminal and the second measurement terminal is normal by an analysis unit analyzing the voltage waveform data, a voltage integral value of the voltage waveform data at the time of voltage rise is calculated, and if the voltage integral value is smaller than a judgment standard, it is judged that the contact is abnormal, and if it is larger than the judgment standard, it is judged that the contact is normal.

17. A semiconductor inspection method for inspecting a test element having a capacitance between a first electrode and a second electrode, comprising: a step of contacting a first measurement terminal with the first electrode, contacting a second measurement terminal with the second electrode, and applying a voltage square wave between the first measurement terminal and the second measurement terminal by a power supply unit; measuring a voltage signal that is a potential difference between the first measurement terminal and the second measurement terminal; A step of converting the voltage signal into voltage waveform data by analog-to-digital conversion; and a step of determining whether or not contact between the first measurement terminal and the second measurement terminal is normal by an analysis unit analyzing the voltage waveform data, Applying a plurality of voltage square waves between the first measurement terminal and the second measurement terminal; A semiconductor inspection method comprising: calculating a voltage integral value of the voltage waveform data at each voltage rise of the multiple voltage rectangular waves; calculating a standard deviation of the voltage integral values ​​for multiple times; and judging the contact to be abnormal if the standard deviation of the voltage integral values ​​is smaller than a judgment standard; and judging the contact to be normal if the standard deviation is larger than the judgment standard.

18. 18. The semiconductor inspection method according to claim 10, wherein the analysis section performs a characteristic inspection of the device under test when it is determined that the contact is normal.

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