Capacitor
JP7632764B1Active Publication Date: 2025-02-19MURATA MFG CO LTD
Patent Information
- Application Number
- JP2024537374
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2023-06-16
- Filing Date
- 2024-02-02
- Publication Date
- 2025-02-19
- Estimated Expiration
- 2044-02-02
Smart Images
Figure 0007632764000008 
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Figure 0007632764000010
Abstract
The present invention provides a capacitor that addresses the degradation of withstand voltage characteristics. More specifically, the present invention provides a capacitor that reduces the degradation of withstand voltage characteristics caused by a volume change of an oxide film formed between a substrate and a dielectric layer. The present invention relates to a capacitor comprising: a metal substrate, a dielectric layer formed on the metal substrate, a conductive layer formed on the dielectric layer, an oxide layer formed between the metal substrate and the dielectric layer, and an oxygen barrier layer formed between the oxide layer and the dielectric layer, the oxide layer including a first oxidized region including a metal forming the metal substrate and a second oxidized region including atoms forming the oxygen barrier layer and a metal forming the metal substrate, the thickness of the first oxidized region being 3 nm or less and being 0% or more and 50% or less of the thickness of the second oxidized region.
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Citation Information
Patent Citations
Semiconductor storage device and manufacture of semiconductor storage device
JP1998223848A
Method for improving electrical conductivity between electrode and plug within laminated capacitor and the laminated capacitor
JP2000031418A
Capacitive element and its manufacturing method
JP2002329786A
Capacitor parts
JP7043718B2