Semiconductor device manufacturing method

Abstract

The present disclosure relates to a method for manufacturing a semiconductor device, and aims to provide a method for manufacturing a semiconductor device that can improve the reliability of a field effect transistor to which the semiconductor device is applied. The method for manufacturing a semiconductor device of the present disclosure includes the steps of epitaxially growing a p-type GaN sacrificial layer, an n-type or undoped GaN layer, an AlGaN layer, and a buffer layer in this order on an n-type GaN substrate to form a laminated structure, attaching a support substrate to the buffer layer of the laminated structure, and immersing the laminated structure attached to the support substrate in an etching solution and irradiating the laminated structure with light to selectively etch the GaN sacrificial layer from the side of the laminated structure. The irradiation range for irradiating the laminated structure with light is set so that the light does not hit the surface layer of the side of the laminated structure.

Images