Detection Equipment

Abstract

To provide a detection device with higher detection accuracy.SOLUTION: A detection device includes one detection element, one photodiode provided to the detection element, a plurality of partial photodiodes in one photodiode, an organic protection film covering the partial photodiodes, a plurality of lenses provided overlapping with the respective partial photodiodes, a first light-blocking layer provided between the organic protection films and the lenses and including first openings in regions overlapping with the respective partial photodiodes, a second light-blocking layer provided between the first light-blocking layer and the lenses and including second openings in regions overlapping with the respective partial photodiodes and the respective first openings, a first light-transmitting resin layer provided between the first light-blocking layer and the second light-blocking layer, and a second light-transmitting resin layer provided between the second light-blocking layer and the lenses. The first light-blocking layer is provided directly on and in contact with the organic protection film.SELECTED DRAWING: Figure 6

Description

[Technical field]

[0001] The present invention relates to a detection device. [Background technology]

[0002] Patent Document 1 describes an image input optical system having a lens array in which a plurality of lenses are arranged, an optical sensor array in which a plurality of optical sensors are arranged, and a pinhole array provided between the lens array and the optical sensor array. Patent Document 2 describes an optical imaging device having a light-shielding layer with an opening provided between a microlens and an optical sensor. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 9-171154 [Patent Document 2] US Patent Application Publication No. 2020 / 0089928 Summary of the Invention [Problem to be solved by the invention]

[0004] In such a detection device, there is a possibility that so-called crosstalk occurs, in which light from an oblique direction is incident on another optical sensor. This may result in a decrease in detection accuracy, such as blurring of the image. In addition, in the image input optical system of Patent Document 1, there are significant restrictions on the positional relationship between the lens, the optical sensor, and the pinhole array, so that when the arrangement pitch of the photodiodes is reduced to achieve high-definition detection, it may be difficult to suppress crosstalk.

[0005] An object of the present invention is to provide a detection device capable of improving detection accuracy. [Means for solving the problem]

[0006] A detection device of one embodiment of the present invention has a detection element formed on the substrate, a photodiode provided in the detection element, a plurality of partial photodiodes included in the one photodiode, an organic protective film covering the plurality of partial photodiodes, a plurality of lenses provided overlapping each of the plurality of partial photodiodes, a first light-shielding layer provided between the plurality of organic protective films and the plurality of lenses and having a first opening in an area overlapping each of the plurality of partial photodiodes, a second light-shielding layer provided between the first light-shielding layer and the plurality of lenses and having a second opening in an area overlapping each of the plurality of partial photodiodes and the plurality of first openings, a first light-transmitting resin layer provided between the first light-shielding layer and the second light-shielding layer, and a second light-transmitting resin layer provided between the second light-shielding layer and the plurality of lenses, wherein the first light-shielding layer is provided directly on and in contact with the organic protective film.

[0007] A detection device of one embodiment of the present invention includes a glass substrate, a first detection element having a first photodiode formed on the glass substrate, a second detection element having a second photodiode, and a light-shielding layer overlapping the first photodiode and the second photodiode and having a plurality of openings, wherein the number of the plurality of openings overlapping the first detection element and the number of the plurality of openings overlapping the second detection element are different from each other. [Brief description of the drawings]

[0008] [Figure 1A] FIG. 1A is a cross-sectional view showing a schematic cross-sectional configuration of a detection instrument with an illumination device having a detection device according to an embodiment. [Figure 1B] FIG. 1B is a cross-sectional view showing a schematic cross-sectional configuration of a detection instrument with an illumination device having a detection device according to Modification 1. As shown in FIG. [Figure 1C] FIG. 1C is a cross-sectional view showing a schematic cross-sectional configuration of a detection instrument with an illumination device having a detection device according to Modification 2. As shown in FIG. [Figure 1D] FIG. 1D is a cross-sectional view showing a schematic cross-sectional configuration of a detection instrument with an illumination device having a detection device according to Modification 3. As shown in FIG. [Diagram 2] FIG. 2 is a plan view showing the detection device according to the embodiment. [Diagram 3] FIG. 3 is a block diagram illustrating an example of the configuration of the detection device according to the embodiment. [Figure 4] FIG. 4 is a circuit diagram showing a detection element. [Diagram 5] FIG. 5 is a plan view showing an optical filter according to the embodiment. [Figure 6] FIG. 6 is a cross-sectional view showing an optical filter. [Figure 7] FIG. 7 is an explanatory diagram for explaining the travel of light when the light is incident on the optical filter in an oblique direction. [Figure 8] FIG. 8 is a plan view showing the detection element. [Figure 9] FIG. 9 is a cross-sectional view taken along line IX-IX' of FIG. [Figure 10] FIG. 10 is a cross-sectional view showing an optical filter according to the fourth modification. [Figure 11] FIG. 11 is a cross-sectional view showing an optical filter according to the fifth modification. [Figure 12] FIG. 12 is a cross-sectional view showing an optical filter according to the sixth modification. [Figure 13] FIG. 13 is a plan view showing an optical filter according to the seventh modification. [Figure 14] FIG. 14 is a cross-sectional view taken along line XIV-XIV' of FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] The form (embodiment) for carrying out the present invention will be described in detail with reference to the drawings. The present disclosure is not limited by the contents described in the following embodiments. The components described below include those that a person skilled in the art can easily imagine and those that are substantially the same. Furthermore, the components described below can be appropriately combined. Note that the disclosure is merely an example, and those that a person skilled in the art can easily imagine appropriate modifications while maintaining the gist of the present disclosure are naturally included in the scope of the present disclosure. In addition, in order to make the explanation clearer, the drawings may be schematic in terms of the width, thickness, shape, etc. of each part compared to the actual embodiment, but they are merely examples and do not limit the interpretation of the present disclosure. In addition, in this disclosure and each figure, elements similar to those described above with respect to the previously mentioned figures may be given the same reference numerals, and detailed explanations may be omitted as appropriate.

[0010] In this specification and the claims, when expressing an aspect of arranging another structure on top of a certain structure, the term "on top" is used, unless otherwise specified, to include both a case in which another structure is arranged directly on top of a certain structure so as to be in contact with the certain structure, and a case in which another structure is arranged above a certain structure via yet another structure.

[0011] Fig. 1A is a cross-sectional view showing a schematic cross-sectional configuration of a detector with an illumination device having a detector according to an embodiment. Fig. 1B is a cross-sectional view showing a schematic cross-sectional configuration of a detector with an illumination device having a detector according to a first modification. Fig. 1C is a cross-sectional view showing a schematic cross-sectional configuration of a detector with an illumination device having a detector according to a second modification. Fig. 1D is a cross-sectional view showing a schematic cross-sectional configuration of a detector with an illumination device having a detector according to a third modification.

[0012] As shown in FIG. 1A, the detection device 120 with an illumination device includes a detection device 1 and an illumination device 121. The detection device 1 includes a sensor substrate 5, an optical filter 7, an adhesive layer 125, and a cover member 122. That is, in a direction perpendicular to the surface of the sensor substrate 5, the sensor substrate 5, the optical filter 7, the adhesive layer 125, and the cover member 122 are laminated in this order. As will be described later, the cover member 122 of the detection device 1 can be replaced with the illumination device 121. The adhesive layer 125 only needs to bond the optical filter 7 and the cover member 122, and the structure may be such that the adhesive layer 125 is not present in the region corresponding to the detection area AA. When the adhesive layer 125 is not present in the detection area AA, the structure is such that the adhesive layer 125 bonds the cover member 122 and the optical filter 7 in the region corresponding to the peripheral area GA outside the detection area AA. The adhesive layer 125 provided in the detection area AA may simply be referred to as a protective layer 125 for the optical filter 7.

[0013] 1A, the illumination device 121 may be, for example, a so-called side-light type front light that uses a cover member 122 as a light guide plate provided at a position corresponding to the detection area AA of the detection device 1 and has a plurality of light sources 123 arranged at one end or both ends of the cover member 122. That is, the cover member 122 has a light irradiation surface 121a that emits light, and is one component of the illumination device 121. According to this illumination device 121, light L1 is emitted from the light irradiation surface 121a of the cover member 122 toward a finger Fg that is a detection target. For example, a light emitting diode (LED) that emits light of a predetermined color is used as the light source.

[0014] Furthermore, as shown in FIG. 1B, the illumination device 121 may have a light source (e.g., an LED) provided directly below the detection area AA of the detection device 1, and the illumination device 121 equipped with a light source also functions as a cover member 122.

[0015] Furthermore, the lighting device 121 is not limited to the example of FIG. 1B, and may be provided to the side or above the cover member 122 as shown in FIG. 1C, and light L1 may be irradiated onto the finger Fg from the side or above the finger Fg.

[0016] Furthermore, as shown in FIG. 1D, the illumination device 121 may be a so-called direct backlight having a light source (for example, an LED) provided in the detection area of ​​the detection device 1.

[0017] Light L1 emitted from the lighting device 121 is reflected as light L2 by a finger Fg, which is a detection target. The detection device 1 detects the light L2 reflected by the finger Fg to detect unevenness (e.g., a fingerprint) on the surface of the finger Fg. Furthermore, in addition to detecting a fingerprint, the detection device 1 may detect information about a living body by detecting the light L2 reflected inside the finger Fg. The information about a living body may be, for example, an image of blood vessels such as veins, a pulse rate, a pulse wave, etc. The color of the light L1 from the lighting device 121 may be different depending on the detection target.

[0018] The cover member 122 is a member for protecting the sensor substrate 5 and the optical filter 7, and covers the sensor substrate 5 and the optical filter 7. As described above, the illumination device 121 may also serve as the cover member 122. In a structure in which the cover member 122 is separated from the illumination device 121 as shown in FIGS. 1C and 1D, the cover member 122 is, for example, a glass substrate. Note that the cover member 122 is not limited to a glass substrate, and may be a resin substrate or the like. Also, the cover member 122 may not be provided. In this case, a protective layer such as an insulating film is provided on the surfaces of the sensor substrate 5 and the optical filter 7, and the finger Fg comes into contact with the protective layer of the detection device 1.

[0019] As shown in FIG. 1B, the detection device 120 with the illumination device may be provided with a display panel instead of the illumination device 121. The display panel may be, for example, an organic EL display panel (OLED: Organic Light Emitting Diode) or an inorganic EL display (micro LED, mini LED). Alternatively, the display panel may be a liquid crystal display panel (LCD: Liquid Crystal Display) using liquid crystal elements as display elements, or an electrophoretic display panel (EPD: Electrophoretic Display) using electrophoretic elements as display elements. Even in this case, it is possible to detect information about the fingerprint and biometric information of the finger Fg based on the light L2 that is obtained by reflecting display light (light L1) emitted from the display panel and reflected by the finger Fg.

[0020] Fig. 2 is a plan view showing a detection device according to an embodiment. Note that the first direction Dx shown in Fig. 2 and subsequent figures is one direction in a plane parallel to the substrate 21. The second direction Dy is one direction in a plane parallel to the substrate 21 and is a direction perpendicular to the first direction Dx. Note that the second direction Dy may not be perpendicular to the first direction Dx but may intersect with it. The third direction Dz is a direction perpendicular to the first direction Dx and the second direction Dy, and is a normal direction to the substrate 21.

[0021] As shown in FIG. 2, the detection device 1 includes an array substrate 2 (substrate 21), a sensor unit 10, a scanning line driving circuit 15, a signal line selection circuit 16, a detection circuit 48, a control circuit 102, and a power supply circuit 103.

[0022] The control board 101 is electrically connected to the board 21 via the wiring board 110. The wiring board 110 is, for example, a flexible printed circuit board or a rigid board. The wiring board 110 is provided with a detection circuit 48. The control board 101 is provided with a control circuit 102 and a power supply circuit 103. The control circuit 102 is, for example, an FPGA (Field Programmable Gate Array). The control circuit 102 supplies control signals to the sensor unit 10, the scanning line driving circuit 15, and the signal line selection circuit 16 to control the operation of the sensor unit 10. The power supply circuit 103 supplies voltage signals such as a power supply potential VDD and a reference potential VCOM (see FIG. 4) to the sensor unit 10, the scanning line driving circuit 15, and the signal line selection circuit 16. In the present embodiment, the case where the detection circuit 48 is disposed on the wiring board 110 is illustrated, but is not limited to this. The detection circuit 48 may be disposed on the board 21.

[0023] The substrate 21 has a detection area AA and a peripheral area GA. The detection area AA and the peripheral area GA extend in a plane direction parallel to the substrate 21. Within the detection area AA, each element (detection element 3) of the sensor unit 10 is provided. The peripheral area GA is an area outside the detection area AA, and is an area where each element (detection element 3) is not provided. In other words, the peripheral area GA is an area between the periphery of the detection area AA and the outer edge of the substrate 21. Within the peripheral area GA, a scanning line driving circuit 15 and a signal line selection circuit 16 are provided. The scanning line driving circuit 15 is provided in an area of ​​the peripheral area GA extending along the second direction Dy. The signal line selection circuit 16 is provided in an area of ​​the peripheral area GA extending along the first direction Dx, and is provided between the sensor unit 10 and the detection circuit 48.

[0024] Each of the detection elements 3 of the sensor unit 10 is an optical sensor having a photodiode 30 as a sensor element. The photodiode 30 is a photoelectric conversion element, and outputs an electrical signal according to the light irradiated thereto. More specifically, the photodiode 30 is a PIN (Positive Intrinsic Negative) photodiode. The photodiode 30 may also be called an OPD (Organic Photo Diode). The detection elements 3 are arranged in a matrix in the detection area AA. The photodiodes 30 of the detection elements 3 perform detection according to gate drive signals (e.g., a reset control signal RST and a read control signal RD) supplied from the scanning line drive circuit 15. The photodiodes 30 output an electrical signal according to the light irradiated thereto as a detection signal Vdet to the signal line selection circuit 16. The detection device 1 detects information about the living body based on the detection signals Vdet from the photodiodes 30.

[0025] Fig. 3 is a block diagram showing a configuration example of a detection device according to an embodiment. As shown in Fig. 3, the detection device 1 further includes a detection control circuit 11 and a detection unit 40. A part or all of the functions of the detection control circuit 11 are included in a control circuit 102. In addition, a part or all of the functions of the detection unit 40 other than the detection circuit 48 are included in the control circuit 102.

[0026] The detection control circuit 11 is a circuit that supplies control signals to the scanning line driving circuit 15, the signal line selection circuit 16, and the detection unit 40, respectively, and controls their operations. The detection control circuit 11 supplies various control signals, such as a start signal STV and a clock signal CK, to the scanning line driving circuit 15. The detection control circuit 11 also supplies various control signals, such as a selection signal ASW, to the signal line selection circuit 16.

[0027] The scanning line driving circuit 15 is a circuit that drives a plurality of scanning lines (readout control scanning line GLrd, reset control scanning line GLrst (see FIG. 4)) based on various control signals. The scanning line driving circuit 15 sequentially or simultaneously selects a plurality of scanning lines, and supplies gate driving signals (e.g., reset control signal RST, readout control signal RD) to the selected scanning lines. In this way, the scanning line driving circuit 15 selects a plurality of photodiodes 30 connected to the scanning lines.

[0028] The signal line selection circuit 16 is a switch circuit that sequentially or simultaneously selects a plurality of output signal lines SL (see FIG. 4). The signal line selection circuit 16 is, for example, a multiplexer. The signal line selection circuit 16 connects the selected output signal line SL to the detection circuit 48 based on a selection signal ASW supplied from the detection control circuit 11. As a result, the signal line selection circuit 16 outputs the detection signal Vdet of the photodiode 30 to the detection unit 40.

[0029] The detection unit 40 includes a detection circuit 48, a signal processing circuit 44, a coordinate extraction circuit 45, a memory circuit 46, and a detection timing control circuit 47. Based on a control signal supplied from the detection control circuit 11, the detection timing control circuit 47 controls the detection circuit 48, the signal processing circuit 44, and the coordinate extraction circuit 45 so that they operate in synchronization with each other.

[0030] The detection circuit 48 is, for example, an analog front-end circuit (AFE). The detection circuit 48 is a signal processing circuit having at least the functions of a detection signal amplifier circuit 42 and an A / D conversion circuit 43. The detection signal amplifier circuit 42 is a circuit that amplifies the detection signal Vdet, and is, for example, an integration circuit. The A / D conversion circuit 43 converts the analog signal output from the detection signal amplifier circuit 42 into a digital signal.

[0031] The signal processing circuit 44 is a logic circuit that detects a predetermined physical quantity input to the sensor unit 10 based on an output signal from the detection circuit 48. When the finger Fg is in contact with or close to the detection surface, the signal processing circuit 44 can detect unevenness on the surface of the finger Fg or the palm based on a signal from the detection circuit 48. The signal processing circuit 44 may also detect information about the living body based on the signal from the detection circuit 48. The information about the living body is, for example, a blood vessel image of the finger Fg or the palm, a pulse wave, a pulse rate, blood oxygen saturation, etc.

[0032] The memory circuit 46 temporarily stores the signal calculated by the signal processing circuit 44. The memory circuit 46 may be, for example, a RAM (Random Access Memory), a register circuit, or the like.

[0033] The coordinate extraction circuit 45 is a logic circuit that determines the detection coordinates of the unevenness of the surface of the finger Fg, etc., when the contact or proximity of the finger Fg is detected in the signal processing circuit 44. The coordinate extraction circuit 45 is also a logic circuit that determines the detection coordinates of the blood vessels of the finger Fg or the palm. The coordinate extraction circuit 45 combines the detection signals Vdet output from each detection element 3 of the sensor unit 10 to generate two-dimensional information indicating the shape of the unevenness of the surface of the finger Fg, etc. The coordinate extraction circuit 45 may output the detection signal Vdet as the sensor output Vo without calculating the detection coordinates.

[0034] Next, an example of the circuit configuration of the detection device 1 will be described. Fig. 4 is a circuit diagram showing a detection element. As shown in Fig. 4, the detection element 3 has a photodiode 30, a reset transistor Mrst, a readout transistor Mrd, and a source follower transistor Msf. The reset transistor Mrst, the readout transistor Mrd, and the source follower transistor Msf are provided corresponding to one photodiode 30. The reset transistor Mrst, the readout transistor Mrd, and the source follower transistor Msf are each composed of an n-type TFT (Thin Film Transistor). However, this is not limited thereto, and each transistor may be composed of a p-type TFT.

[0035] A reference potential VCOM is applied to the anode of the photodiode 30. The cathode of the photodiode 30 is connected to a node N1. The node N1 is connected to a capacitance element Cs, one of the source or drain of the reset transistor Mrst, and the gate of the source follower transistor Msf. Furthermore, a parasitic capacitance Cp exists at the node N1. When light is incident on the photodiode 30, a signal (charge) output from the photodiode 30 is accumulated in the capacitance element Cs. Here, the capacitance element Cs is, for example, a capacitance formed between an upper conductive layer 34 and a lower conductive layer 35 (see FIG. 9) connected to the photodiode 30. The parasitic capacitance Cp is a capacitance added to the capacitance element Cs, and is a capacitance formed between various wirings and electrodes provided on the array substrate 2.

[0036] The gate of the reset transistor Mrst is connected to a reset control scanning line GLrst. The other of the source or drain of the reset transistor Mrst is supplied with a reset potential Vrst. When the reset transistor Mrst is turned on (conductive state) in response to a reset control signal RST, the potential of the node N1 is reset to the reset potential Vrst. The reference potential VCOM has a potential lower than the reset potential Vrst, and the photodiode 30 is reverse-bias driven.

[0037] The source follower transistor Msf is connected between a terminal to which a power supply potential VDD is supplied and the readout transistor Mrd (node ​​N2). The gate of the source follower transistor Msf is connected to the node N1. A signal (charge) generated in the photodiode 30 is supplied to the gate of the source follower transistor Msf. As a result, the source follower transistor Msf outputs a voltage signal corresponding to the signal (charge) generated in the photodiode 30 to the readout transistor Mrd.

[0038] The read transistor Mrd is connected between the source of the source follower transistor Msf (node ​​N2) and the output signal line SL (node ​​N3). The gate of the read transistor Mrd is connected to the read control scanning line GLrd. When the read transistor Mrd is turned on in response to the read control signal RD, the signal output from the source follower transistor Msf, i.e., a voltage signal corresponding to the signal (charge) generated in the photodiode 30, is output to the output signal line SL as the detection signal Vdet.

[0039] In the example shown in FIG. 4, the reset transistor Mrst and the readout transistor Mrd each have a so-called double-gate structure in which two transistors are connected in series. However, without being limited thereto, the reset transistor Mrst and the readout transistor Mrd may have a single-gate structure or a multi-gate structure in which three or more transistors are connected in series. Furthermore, the circuit of one detection element 3 is not limited to a configuration having three transistors, namely, the reset transistor Mrst, the source follower transistor Msf, and the readout transistor Mrd. The detection element 3 may have two or four or more transistors.

[0040] Next, detailed configurations of the detection element 3 and the optical filter 7 will be described. Fig. 5 is a plan view showing the optical filter according to the embodiment. The optical filter 7 is an optical element that transmits a component of the light L2 reflected by a detection object such as a finger Fg traveling in the third direction Dz toward the photodiode 30 and blocks a component traveling in an oblique direction. The optical filter 7 is also called a collimating aperture or a collimator.

[0041] As shown in FIG. 5, the optical filter 7 is provided to cover a plurality of detection elements 3 (photodiodes 30) arranged in a matrix. The optical filter 7 has a first light-transmitting resin layer 74 and a second light-transmitting resin layer 75 that cover the plurality of detection elements 3, and a plurality of lenses 78 that are provided on each of the plurality of detection elements 3. A plurality of lenses 78 are arranged for one detection element 3. In the example shown in FIG. 5, eight lenses 78, ie, lenses 78-1, 78-2, . . . , 78-8, are provided on one detection element 3. The plurality of lenses 78-1, 78-2, . . . , 78-8 are arranged in a triangular lattice pattern. In addition, as described later, one detection element 3 has a plurality of detection regions (partial photodiodes 30S), and a lens 78 corresponds to each of the plurality of detection regions in one detection element 3.

[0042] However, the number of lenses 78 arranged in one detection element 3 may be seven or less, or nine or more, depending on the number of detection regions. The arrangement of the lenses 78 can also be changed appropriately depending on the configuration of the photodiode 30.

[0043] Fig. 6 is a cross-sectional view showing an optical filter. Fig. 6 is a cross-sectional view taken along line VI-VI' in Fig. 5. Note that Fig. 6 shows a simplified configuration of the sensor substrate 5, and diagrammatically shows the photodiode 30 (partial photodiode 30S-1) and the protective film 29 covering the photodiode 30.

[0044] 6, the optical filter 7 has a first light-shielding layer 71, a second light-shielding layer 72, a filter layer 73, a first light-transmitting resin layer 74, a second light-transmitting resin layer 75, and a lens 78. In this embodiment, the first light-shielding layer 71, the filter layer 73, the first light-transmitting resin layer 74, the second light-shielding layer 72, the second light-transmitting resin layer 75, and the lens 78 are laminated in this order on the protective film 29.

[0045] The lens 78 is provided in a region overlapping the partial photodiode 30S-1 of one photodiode 30. The lens 78 is a convex lens. The optical axis CL of the lens 78 is provided in a direction parallel to the third direction Dz and intersects with the partial photodiode 30S-1. The lens 78 is provided on and in direct contact with the second light-transmitting resin layer 75. In this embodiment, no light-shielding layer or the like is provided on the second light-transmitting resin layer 75 between adjacent lenses 78.

[0046] The first light-shielding layer 71 is provided directly on and in contact with the protective film 29 of the sensor substrate 5. In other words, the first light-shielding layer 71 is provided between the photodiode 30 and the lens 78 in the third direction Dz. Furthermore, the first light-shielding layer 71 is provided with a first opening OP1 in a region overlapping the photodiode 30. The first opening OP1 is formed in a region overlapping with the optical axis CL.

[0047] The first light-shielding layer 71 is provided directly on and in contact with the protective film 29 of the sensor substrate 5. The first light-shielding layer 71 is formed of a metal material such as molybdenum (Mo). This allows the first light-shielding layer 71 to reflect components of the light L2 traveling in an oblique direction other than the light L2 passing through the first opening OP1. In addition, since the first light-shielding layer 71 is formed of a metal material, the width W1 (diameter) of the first opening OP1 in the first direction Dx can be formed with high precision. Therefore, even if the arrangement pitch or area of ​​the photodiodes 30 is small, the first opening OP1 can be provided in correspondence with the photodiodes 30.

[0048] The first light-shielding layer 71 is formed by processing a metal material deposited by sputtering or the like on the protective film 29 of the sensor substrate 5 to form a first opening OP1, and is different from a so-called external optical filter attached by laminating it on the protective film 29 of the sensor substrate 5. Laminating an external optical filter to the sensor substrate 5 is particularly difficult in terms of aligning the small opening in the light-shielding layer corresponding to the first opening OP1 of the first light-shielding layer 71 of this embodiment with the partial photodiode 30S-1. On the other hand, since the optical filter 7 of this embodiment is formed directly on the protective film 29 of the sensor substrate 5, it is possible to provide the first opening OP1 on the partial photodiode 30S-1 with higher accuracy than laminating an external optical filter.

[0049] Furthermore, since the first light-shielding layer 71 is made of a metal material, unlike the second light-shielding layer 72 which is made of a resin material described later, it can be formed thinner than the second light-shielding layer 72, and a first opening OP1 smaller than a second opening OP2 formed in the second light-shielding layer 72 can be formed. The thickness of the first light-shielding layer 71 is one-tenth or less of the thickness of the second light-shielding layer 72. As an example, the thickness of the first light-shielding layer 71 is 0.055 μm or more, for example, 0.065 μm, and the thickness of the second light-shielding layer is, for example, 1 μm. The first light-shielding layer 71 is formed to be extremely thin compared to the thickness of the second light-shielding layer 72.

[0050] The filter layer 73 is provided directly on and in contact with the first light-shielding layer 71. In other words, the filter layer 73 is provided between the first light-shielding layer 71 and the first light-transmitting resin layer 74 in the third direction Dz. The filter layer 73 also covers an area overlapping with the first opening OP1, and is in contact with the protective film 29 of the sensor substrate 5 through the first opening OP1. The filter layer 73 is a filter that blocks light of a predetermined wavelength band. The filter layer 73 is formed of, for example, a resin material colored green, and is an IR cut filter that blocks infrared rays. Thereby, the optical filter 7 can improve the detection sensitivity by allowing a component of the light L2, for example, a wavelength band required for fingerprint detection, to enter the photodiode 30.

[0051] The first light-transmitting resin layer 74 is provided directly on and in contact with the filter layer 73. In other words, the first light-transmitting resin layer 74 is provided between the first light-shielding layer 71 and the second light-shielding layer 72 in the third direction Dz. The first light-transmitting resin layer 74 and the second light-transmitting resin layer 75 are formed of, for example, a light-transmitting acrylic resin.

[0052] The second light-shielding layer 72 is provided directly on and in contact with the first light-transmitting resin layer 74. In other words, the second light-shielding layer 72 is provided between the first light-shielding layer 71 and the lens 78 in the third direction Dz. Furthermore, the second light-shielding layer 72 is provided with a second opening OP2 in a region overlapping the photodiode 30 and the first opening OP1. The second opening OP2 is formed in a region overlapping with the optical axis CL. More preferably, the center of the second opening OP2 and the center of the first opening OP1 are provided to overlap with the optical axis CL.

[0053] The second light-shielding layer 72 is formed of, for example, a resin material colored black. As a result, the second light-shielding layer 72 functions as a light absorbing layer that absorbs components of the light L2 traveling in an oblique direction other than the light L2 that transmits through the second opening OP2. In addition, the second light-shielding layer 72 absorbs light reflected by the first light-shielding layer 71. As a result, compared to a configuration in which the second light-shielding layer 72 is formed of a metal material, it is possible to suppress the light reflected by the first light-shielding layer 71 from traveling through the first light-transmitting resin layer 74 as stray light and entering other photodiodes 30. In addition, the second light-shielding layer 72 can absorb external light that enters between the adjacent lenses 78. As a result, compared to a configuration in which the second light-shielding layer 72 is formed of a metal material, it is possible to suppress the reflected light at the second light-shielding layer 72. However, the second light-shielding layer 72 is not limited to an example in which it is formed of a resin material colored black, and may be formed of a metal material whose surface is blackened.

[0054] The second light-transmitting resin layer 75 is provided directly on and in contact with the second light-shielding layer 72. In other words, the second light-transmitting resin layer 75 is provided between the second light-shielding layer 72 and the lens 78. The second light-transmitting resin layer 75 also covers a region overlapping with the second opening OP2, and is in contact with the first light-transmitting resin layer 74 via the second opening OP2.

[0055] The second light-transmitting resin layer 75 is made of the same material as the first light-transmitting resin layer 74, and the refractive index of the second light-transmitting resin layer 75 is substantially equal to the refractive index of the first light-transmitting resin layer 74. This makes it possible to suppress reflection of the light L2 at the interface between the first light-transmitting resin layer 74 and the second light-transmitting resin layer 75 at the second opening OP2. However, without being limited thereto, the first light-transmitting resin layer 74 and the second light-transmitting resin layer 75 may be formed of different materials, and the refractive index of the first light-transmitting resin layer 74 and the refractive index of the second light-transmitting resin layer 75 may be different.

[0056] In this embodiment, the width W3 (diameter) of the lens 78 in the first direction Dx, the width W2 (diameter) of the second opening OP2 in the first direction Dx, and the width W1 (diameter) of the first opening OP1 in the first direction Dx are smaller in this order. The width W1 of the first opening OP1 in the first direction Dx is smaller than the width of the partial photodiode 30S-1 of the photodiode 30 in the first direction Dx. The width W1 is 2 μm or more and 10 μm or less, for example, about 3.5 μm. The width W2 is 3 μm or more and 20 μm or less, for example, about 10.0 μm. The width W3 is 10 μm or more and 50 μm or less, for example, about 21.9 μm.

[0057] Also, the thickness t2 of the second light-transmitting resin layer 75 shown in FIG. 6 is formed to be approximately the same as the thickness t1 of the first light-transmitting resin layer 74, or to be thinner or thicker than the thickness t1 of the first light-transmitting resin layer 74. The thickness t1 of the first light-transmitting resin layer 74 and the thickness t2 of the second light-transmitting resin layer 75 are formed to be thicker than the thickness t4 of the filter layer 73. Also, the thickness t1 of the first light-transmitting resin layer 74 and the thickness t2 of the second light-transmitting resin layer 75 are thicker than the thickness t3 of the protective film 29 of the sensor substrate 5. The thicknesses t1 and t2 are 3 μm or more and 30 μm or less, for example, the thickness t1 is about 18 μm. The thickness t2 is, for example, about 16.5 μm. The thickness t3 is 1 μm or more and 10 μm or less, for example, 4.5 μm or more. Also, the thickness t4 of the filter layer 73, as an example, is 1 μm or more and 5 μm or less, for example, 1.35 μm.

[0058] With this configuration, of the light L2 reflected by a detected object such as a finger Fg, the light L2-1 traveling in the third direction Dz is collected by the lens 78, passes through the second opening OP2 and the first opening OP1, and is incident on the photodiode 30. In addition, the light L2-2 inclined by an angle θ1 with respect to the third direction Dz also passes through the second opening OP2 and the first opening OP1, and is incident on the photodiode 30.

[0059] FIG. 7 is an explanatory diagram for explaining the travel of light when light is incident on the optical filter in an oblique direction. FIG. 7 shows the cross-sectional structure of two adjacent lenses 78-1 and 78-6, and the lenses 78-1 and 78-6 are provided at positions overlapping with the partial photodiodes 30S-1 and 30S-6 of the photodiode 30, respectively. FIG. 7 also shows a case where light L2 traveling in a direction inclined obliquely with respect to the third direction Dz is incident on the optical filter 7. In the example shown in FIG. 7, the angle θ2 between the light L2 and the third direction Dz is 65°.

[0060] 7, light L2 incident on lenses 78-1 and 78-6 in an oblique direction is collected as light L2-3 and L2-5, respectively, and is blocked by the second light-shielding layer 72. Light L2 incident on the second light-transmitting resin layer 75 between adjacent lenses 78 is refracted at the upper surface of the second light-transmitting resin layer 75 and travels through the second light-transmitting resin layer 75 as light L2-4. A part of the light L2-4 is blocked by the second light-shielding layer 72. A component of the light L2-4 transmitted through the second opening OP2 is blocked by the first light-shielding layer 71.

[0061] In this way, by providing the first light-shielding layer 71 and the second light-shielding layer 72, the optical filter 7 can effectively block light L2 incident from an oblique direction, and suppress the occurrence of so-called crosstalk, compared to a case in which the optical filter 7 is formed of only one light-shielding layer (for example, in FIG. 7, a case in which the second light-shielding layer 72 is not provided and the optical filter 7 is formed of only the first light-shielding layer 71).

[0062] Furthermore, even when the first light-shielding layer 71 and the second light-shielding layer 72 are provided, the light L2 incident in a direction parallel to the third direction Dz can be efficiently incident on the partial photodiode 30S by suppressing the light L2 from being blocked by the first light-shielding layer 71 and the second light-shielding layer 72. As described above, the detection device 1 can improve detection accuracy by suppressing the occurrence of crosstalk.

[0063] As shown in FIG. 6, the width W2 of the second opening OP2 is larger than the width W1 of the first opening OP1, and the thickness t2 is formed to be approximately the same as or thinner than the thickness t1. If the thickness t2 is formed to be thicker than the thickness t1, the second light-shielding layer 72 is disposed at a position farther from the lens 78 in the third direction Dz. For this reason, in a structure in which one photodiode 30 has partial photodiodes 30S and each of the partial photodiodes 30S is provided with an opening OP2 as shown in FIG. 5, the thicker the film thickness of the second light-transmitting resin layer 75 is, the more likely it is that the second light-shielding layer 72 will not be able to sufficiently block the oblique light L2 that passes through the lens 78 and travels. This becomes more pronounced as the multiple lenses 78 arranged in one detection element 3 become denser. In this embodiment, the thickness t2 is formed to be thinner than the thickness t1, so that the light L2 traveling in a direction parallel to the third direction Dz can be made incident on the photodiode 30, and the oblique light L2 can be effectively blocked.

[0064] 6, the second light-shielding layer 72 may be formed thicker than the first light-shielding layer 71. The film thickness of the second light-shielding layer 72, including the width W2 of the second opening OP2, can be changed as appropriate in accordance with the characteristics required for the optical filter 7. The thickness t2 of the second light-transmitting resin layer 75 can be changed as appropriate in accordance with the characteristics required for the optical filter 7.

[0065] Depending on the angle of the incident light, there is a possibility that the light may pass through both the second opening OP2 and the first opening OP1 and reach the photodiode 30. Even in this case, the above-described configuration reduces the amount of light incident in an oblique direction to an extremely small amount compared to the amount of light L2 incident in a direction parallel to the third direction Dz.

[0066] Moreover, the optical filter 7 is formed integrally with the sensor substrate 5. That is, the first light-shielding layer 71 of the optical filter 7 is provided directly on and in contact with the protective film 29, and no member such as an adhesive layer is provided between the first light-shielding layer 71 and the protective film 29. The optical filter 7 is formed by directly depositing a film on the sensor substrate 5 and performing a process such as patterning, so that the positional accuracy of the first opening OP1, the second opening OP2, and the lens 78 of the optical filter 7, and the photodiode 30 can be improved compared to the case where the optical filter 7 is bonded to the sensor substrate 5 separately.

[0067] Fig. 8 is a plan view showing a detection element. In Fig. 8, in order to make the drawing easier to see, a plurality of transistors and various wirings such as scanning lines and signal lines that the detection element 3 has are omitted. One detection element 3 is defined by an area surrounded by, for example, a plurality of scanning lines and a plurality of signal lines.

[0068] 8, the photodiode 30 has a plurality of partial photodiodes 30S-1, 30S-2, ..., 30S-8. The partial photodiodes 30S-1, 30S-2, ..., 30S-8 are arranged in a triangular lattice pattern. The lenses 78-1, 78-2, ..., 78-8, the first opening OP1 of the first light-shielding layer 71, and the second opening OP2 of the second light-shielding layer 72 shown in FIG. 5 are provided so as to overlap the partial photodiodes 30S-1, 30S-2, ..., 30S-8, respectively.

[0069] More specifically, the partial photodiodes 30S-1, 30S-2, and 30S-3 are arranged in the second direction Dy. The partial photodiodes 30S-4 and 30S-5 are arranged in the second direction Dy and are adjacent to an element row composed of the partial photodiodes 30S-1, 30S-2, and 30S-3 in the first direction Dx. The partial photodiodes 30S-6, 30S-7, and 30S-8 are arranged in the second direction Dy and are adjacent to an element row composed of the partial photodiodes 30S-4 and 30S-5 in the first direction Dx. The positions of the partial photodiodes 30S in the second direction Dy are staggered between adjacent element rows.

[0070] Light L2 is incident on the partial photodiodes 30S-1, 30S-2, ..., 30S-8 through the lenses 78-1, 78-2, ..., 78-8, respectively. The partial photodiodes 30S-1, 30S-2, ..., 30S-8 are electrically connected and function as one photodiode 30. That is, signals output from the partial photodiodes 30S-1, 30S-2, ..., 30S-8 are integrated, and one detection signal Vdet is output from the photodiode 30. In the following description, when it is not necessary to distinguish between the partial photodiodes 30S-1, 30S-2, ..., 30S-8, they will simply be referred to as the partial photodiode 30S.

[0071] The partial photodiode 30S includes an i-type semiconductor layer 31, an n-type semiconductor layer 32, and a p-type semiconductor layer 33. The i-type semiconductor layer 31 and the n-type semiconductor layer 32 are, for example, amorphous silicon (a-Si). The p-type semiconductor layer 33 is, for example, polysilicon (p-Si). Note that the material of the semiconductor layers is not limited to this and may be polysilicon, microcrystalline silicon, or the like.

[0072] The n-type semiconductor layer 32 is an n+ region formed by doping impurities into a-Si. The p-type semiconductor layer 33 is a p+ region formed by doping impurities into p-Si. The i-type semiconductor layer 31 is, for example, a non-doped intrinsic semiconductor, and has lower conductivity than the n-type semiconductor layer 32 and the p-type semiconductor layer 33.

[0073] 8, an effective sensor region 37 where the p-type semiconductor layer 33 and the i-type semiconductor layer 31 (the n-type semiconductor layer 32) are connected is indicated by a dashed line. The first opening OP1 of the first light-shielding layer 71 is provided so as to overlap with the sensor region 37.

[0074] The partial photodiodes 30S have different shapes in a plan view. The partial photodiodes 30S-1, 30S-2, and 30S-3 are each formed in a polygonal shape. The partial photodiodes 30S-4, 30S-5, 30S-6, 30S-7, and 30S-8 are each formed in a circular or semicircular shape.

[0075] The n-type semiconductor layers 32 of the partial photodiodes 30S-1, 30S-2, and 30S-3 arranged in the second direction Dy are electrically connected by connectors CN1-1 and CN1-2. The p-type semiconductor layers 33 of the partial photodiodes 30S-1, 30S-2, and 30S-3 are electrically connected by connectors CN2-1 and CN2-2.

[0076] Further, the n-type semiconductor layers 32 (i-type semiconductor layers 31) of the partial photodiodes 30S-4, 30S-5, 30S-6, 30S-7, and 30S-8 are electrically connected by a base BA1. The p-type semiconductor layers 33 of the partial photodiodes 30S-4, 30S-5, 30S-6, 30S-7, and 30S-8 are electrically connected by a base BA2. The bases BA1 and BA2 are formed in a substantially pentagonal shape, and the partial photodiodes 30S-4, 30S-5, 30S-6, 30S-7, and 30S-8 are provided at the vertices. The base BA2 and the p-type semiconductor layers 33 of the partial photodiodes 30S-1, 30S-2, and 30S-3 are electrically connected by a connecting portion CN2-3. As a result, the multiple partial photodiodes 30S constituting one photodiode 30 are electrically connected.

[0077] The lower conductive layer 35 is provided in a region overlapping with each of the partial photodiodes 30S. All of the lower conductive layers 35 are circular in plan view. That is, the lower conductive layer 35 may have a shape different from that of the partial photodiode 30S. For example, the partial photodiodes 30S-1, 30S-2, and 30S-3 are polygonal in plan view and are formed on the circular lower conductive layer 35. The partial photodiodes 30S-4, 30S-5, 30S-6, 30S-7, and 30S-8 are circular or semicircular in plan view having a smaller diameter than the lower conductive layer 35 and are formed on the circular lower conductive layer 35. The lower conductive layer 35 is supplied with the same reference potential VCOM as the p-type semiconductor layer 33, and the parasitic capacitance between the lower conductive layer 35 and the p-type semiconductor layer 33 can be suppressed.

[0078] The upper conductive layer 34 electrically connects the n-type semiconductor layers 32 of the multiple partial photodiodes 30S. The upper conductive layer 34 is electrically connected to each transistor (the reset transistor Mrst and the source follower transistor Msf (see FIG. 4)) of the sensor substrate 5. The upper conductive layer 34 may be provided in any manner, and may, for example, cover a part of the partial photodiode 30S or may be provided so as to cover the entire partial photodiode 30S.

[0079] In this embodiment, a partial photodiode 30S is provided for each of the multiple lenses 78 and the multiple first openings OP1. As a result, compared to a configuration in which the photodiode 30 is formed of a solid film having a rectangular shape or the like so as to cover the entire detection element 3 in a planar view, the semiconductor layer and wiring layer can be reduced in the region that does not overlap the multiple lenses 78 and the multiple first openings OP1, and the parasitic capacitance of the photodiode 30 can be suppressed.

[0080] 8 is merely an example and may be modified as appropriate. The number of partial photodiodes 30S included in one photodiode 30 may be seven or less, or nine or more. The arrangement of the partial photodiodes 30S is not limited to a triangular lattice pattern, and may be arranged in a matrix pattern, for example. The arrangement of the lenses 78, the first opening OP1, and the second opening OP2 included in the optical filter 7 may also be modified as appropriate according to the configuration of the partial photodiodes 30S.

[0081] Fig. 9 is a cross-sectional view taken along line IX-IX' in Fig. 8. Fig. 9 shows the cross-sectional configuration of the partial photodiode 30S-1 as well as the cross-sectional configuration of the reset transistor Mrst included in the detection element 3. The cross-sectional configurations of the source follower transistor Msf and the readout transistor Mrd included in the detection element 3 are similar to that of the reset transistor Mrst.

[0082] The substrate 21 is an insulating substrate, and may be, for example, a glass substrate such as quartz or alkali-free glass, or a resin substrate such as polyimide. The gate electrode 64 is provided on the substrate 21. The insulating films 22 and 23 are provided on the substrate 21 to cover the gate electrode 64. The insulating films 22 and 23 and the insulating films 24, 25, and 26 are inorganic insulating films, and may be, for example, silicon oxide (SiO2), silicon nitride (SiN), or the like.

[0083] The semiconductor layer 61 is provided on the insulating film 23. The semiconductor layer 61 is made of, for example, polysilicon. However, the semiconductor layer 61 is not limited to this and may be a microcrystalline oxide semiconductor, an amorphous oxide semiconductor, low temperature polycrystalline silicon (LTPS), or the like. The reset transistor Mrst has a bottom gate structure in which the gate electrode 64 is provided below the semiconductor layer 61, but may have a top gate structure in which the gate electrode 64 is provided above the semiconductor layer 61, or may have a dual gate structure in which the gate electrode 64 is provided above and below the semiconductor layer 61.

[0084] The semiconductor layer 61 includes a channel region 61a, high-concentration impurity regions 61b and 61c, and low-concentration impurity regions 61d and 61e. The channel region 61a is, for example, a non-doped intrinsic semiconductor or a low-concentration impurity region, and has lower conductivity than the high-concentration impurity regions 61b and 61c and the low-concentration impurity regions 61d and 61e. The channel region 61a is provided in a region overlapping with the gate electrode 64.

[0085] The insulating films 24 and 25 are provided on the insulating film 23 to cover the semiconductor layer 61. The source electrode 62 and the drain electrode 63 are provided on the insulating film 25. The source electrode 62 is connected to the high concentration impurity region 61b of the semiconductor layer 61 through a contact hole H5. The drain electrode 63 is connected to the high concentration impurity region 61c of the semiconductor layer 61 through a contact hole H3. The source electrode 62 and the drain electrode 63 are made of, for example, a TiAlTi or TiAl laminated film having a laminated structure of titanium and aluminum.

[0086] The gate line GLsf is a wiring connected to the gate of the source follower transistor Msf. The gate line GLsf is provided in the same layer as the gate electrode 64. The drain electrode 63 (connection wiring SLcn) is connected to the gate line GLsf via a contact hole that penetrates from the insulating film 22 through the insulating film 25.

[0087] Next, a cross-sectional configuration of the photodiode 30 will be described. In FIG. 9, the partial photodiode 30S-1 will be described, but the description of the partial photodiode 30S-1 can also be applied to the other partial photodiodes 30S-2, . . . , 30S-8. As shown in FIG. 9, the lower conductive layer 35 is provided on the substrate 21 in the same layer as the gate electrode 64 and the gate line GLsf. The insulating film 22 and the insulating film 23 are provided on the lower conductive layer 35. The photodiode 30 is provided on the insulating film 23. In other words, the lower conductive layer 35 is provided between the substrate 21 and the p-type semiconductor layer 33. The lower conductive layer 35 is formed of the same material as the gate electrode 64, and thus functions as a light-shielding layer, and the lower conductive layer 35 can suppress the intrusion of light from the substrate 21 side into the photodiode 30.

[0088] In the third direction Dz, the i-type semiconductor layer 31 is provided between the p-type semiconductor layer 33 and the n-type semiconductor layer 32. In this embodiment, the p-type semiconductor layer 33, the i-type semiconductor layer 31, and the n-type semiconductor layer 32 are stacked in this order on the insulating film 23. The effective sensor region 37 shown in FIG. 8 is a region where the i-type semiconductor layer 31 and the p-type semiconductor layer 33 are connected.

[0089] Specifically, the p-type semiconductor layer 33 is provided on the insulating film 23 in the same layer as the semiconductor layer 61. The insulating films 24, 25, and 26 are provided to cover the p-type semiconductor layer 33. A contact hole H13 is provided in the insulating films 24 and 25 at positions where the insulating films 24 and 25 overlap with the p-type semiconductor layer 33. The insulating film 26 is provided on the insulating film 25 to cover a plurality of transistors including the reset transistor Mrst. The insulating film 26 covers the side surfaces of the insulating films 24 and 25 that form the inner walls of the contact hole H13. Furthermore, a contact hole H14 is provided in the insulating film 26 at a position where the insulating film 24 and 25 overlap with the p-type semiconductor layer 33.

[0090] The i-type semiconductor layer 31 is provided on the insulating film 26, and is connected to the p-type semiconductor layer 33 via a contact hole H14 that passes through the insulating film 26 from the insulating film 24. The n-type semiconductor layer 32 is provided on the i-type semiconductor layer 31.

[0091] The insulating film 27 is provided on the insulating film 26, covering the photodiode 30. The insulating film 27 is provided in direct contact with the photodiode 30 and the insulating film 26. The insulating film 27 is made of an organic material such as photosensitive acrylic. The insulating film 27 is thicker than the insulating film 26. The insulating film 27 has better step coverage than inorganic insulating materials, and is provided to cover the side surfaces of the i-type semiconductor layer 31 and the n-type semiconductor layer 32.

[0092] The upper conductive layer 34 is provided on the insulating film 27. The upper conductive layer 34 is a conductive material having translucency, such as ITO (Indium Tin Oxide). The upper conductive layer 34 is provided following the surface of the insulating film 27, and is connected to the n-type semiconductor layer 32 through a contact hole H1 provided in the insulating film 27. In addition, the upper conductive layer 34 is electrically connected to the drain electrode 63 of the reset transistor Mrst and the gate line GLsf through a contact hole H2 provided in the insulating film 27.

[0093] The insulating film 28 is provided on the insulating film 27, covering the upper conductive layer 34. The insulating film 28 is an inorganic insulating film. The insulating film 28 is provided as a protective layer that suppresses the intrusion of moisture into the photodiode 30. The superimposed conductive layer 36 is provided on the insulating film 28. The superimposed conductive layer 36 is a light-transmitting conductive material such as ITO. The superimposed conductive layer 36 is a conductive layer that supplies a power supply potential VDD to the source follower transistor Msf, and is electrically connected to the source follower transistor Msf etc. at an arbitrary point.

[0094] The protective film 29 is provided on the insulating film 28, covering the superposed conductive layer 36. The protective film 29 is an organic protective film. The protective film 29 is formed so as to flatten the surface of the detection device 1.

[0095] In this embodiment, the p-type semiconductor layer 33 and the lower conductive layer 35 of the photodiode 30 are provided in the same layer as the transistors, so the manufacturing process can be simplified compared to when the photodiode 30 is formed in a different layer from the transistors.

[0096] 9 is merely an example, and is not limited thereto, and for example, the photodiode 30 may be provided in a layer different from that of each transistor, or may be provided by stacking a p-type semiconductor layer 33, an i-type semiconductor layer 31, and an n-type semiconductor layer 32 in this order on the insulating film 26.

[0097] As described above, the detection device 1 of the present embodiment includes the substrate 21, a plurality of photodiodes 30 arranged on the substrate 21, and an optical filter 7 covering the plurality of photodiodes 30. The optical filter 7 includes a plurality of lenses 78 provided so as to overlap the plurality of photodiodes 30, a first light-shielding layer 71 provided between the plurality of photodiodes 30 and the plurality of lenses 78 and having a first opening OP1 in an area overlapping the plurality of photodiodes 30, and a second light-shielding layer 72 provided between the first light-shielding layer 71 and the plurality of lenses 78 and having a second opening OP2 in an area overlapping the plurality of photodiodes 30 and the plurality of first openings OP1. The first light-shielding layer 71 is formed of a metal material, and the second light-shielding layer 72 is formed of a resin material.

[0098] According to this, since the first light-shielding layer 71 and the second light-shielding layer 72 are provided between the photodiode 30 and the lens 78, the optical filter 7 allows the light L2 traveling in a direction parallel to the third direction Dz to be incident on the photodiode 30, while effectively blocking the light L2 in the oblique direction, thereby suppressing the occurrence of crosstalk.

[0099] 10 is a cross-sectional view showing an optical filter according to Modification 4. In the following description, the same components as those described in the above embodiment are given the same reference numerals, and duplicated description will be omitted.

[0100] In the above-described embodiment, as shown in FIG. 6, the filter layer 73 is provided between the first light-shielding layer 71 and the first light-transmitting resin layer 74, but the position of the filter layer 73 is not limited thereto. As shown in FIG. 10, in the optical filter 7A, the filter layer 73 is provided directly on and in contact with the first light-transmitting resin layer 74. In other words, the filter layer 73 is provided between the first light-transmitting resin layer 74 and the second light-shielding layer 72 in the third direction Dz. In addition, the second light-shielding layer 72 is provided directly on and in contact with the filter layer 73. The second opening OP2 of the second light-shielding layer 72 is provided on the filter layer 73, and the filter layer 73 is in contact with the second light-transmitting resin layer 75 via the second opening OP2.

[0101] In addition, in this modified example, the filter layer 73 is not provided on the first light-shielding layer 71, and the first light-transmitting resin layer 74 is provided directly on and in contact with the first light-shielding layer 71, and contacts the protective film 29 of the sensor substrate 5 through the first opening OP1.

[0102] Fig. 11 is a cross-sectional view showing an optical filter according to Modification 5. In the optical filter 7B shown in Fig. 11, the filter layer 73 is provided directly on and in contact with the second light-shielding layer 72. In other words, the filter layer 73 is provided between the second light-shielding layer 72 and the second light-transmitting resin layer 75 in the third direction Dz. The filter layer 73 is provided to cover the second opening OP2 of the second light-shielding layer 72, and is in contact with the first light-transmitting resin layer 74 via the second opening OP2. The second light-transmitting resin layer 75 is provided directly on and in contact with the filter layer 73.

[0103] Fig. 12 is a cross-sectional view showing an optical filter according to Modification 6. In an optical filter 7C shown in Fig. 12, a filter layer 73 is provided directly on and in contact with a second light-transmitting resin layer 75. A lens 78 is provided directly on and in contact with the filter layer 73. In this modification, the filter layer 73 is not provided directly overlapping either the first opening OP1 of the first light-shielding layer 71 or the second opening OP2 of the second light-shielding layer 72. The protective film 29, the first light-transmitting resin layer 74, and the second light-transmitting resin layer 75 are laminated in this order along the optical axis CL.

[0104] The thickness t4 of the filter layer 73 is sufficiently thinner than the thickness t1 of the first light-transmitting resin layer 74 and the thickness t2 of the second light-transmitting resin layer 75. For this reason, even when the stacking position of the filter layer 73 is changed as shown in Modifications 4 to 6, there is no need to significantly change the first opening OP1 of the first light-shielding layer 71 and the second opening OP2 of the second light-shielding layer 72.

[0105] FIG. 13 is a plan view showing an optical filter according to Modification 7. The optical filter 7D shown in FIG. 13 differs in that the relationship between the lens and the aperture OP of the light-shielding layer varies depending on the detection element 3. The aperture OP indicates an aperture intended for either the first aperture OP1 or the second aperture OP2, or both, and does not particularly distinguish between the first aperture OP1 and the second aperture OP2. That is, in the embodiment shown in FIG. 5 and FIG. 6, the number of lenses 78, the number of first apertures OP1, and the number of second apertures OP2 in one detection element 3 are the same in all detection elements 3, whereas in FIG. 13, for example, when comparing the detection element 3 and the detection element 3-1, the number of apertures OP in one detection element 3 is different from the number of apertures OP in the other detection element 3-1.

[0106] In the detection element 3 (first detection element) of Figure 13, one photodiode 30 (first photodiode) has eight partial photodiodes 30S, has a first opening OP1 and a second opening OP2 overlapping each of the eight partial photodiodes 30S, and has lenses 78 (78-1 to 78-8) overlapping each of the eight partial photodiodes 30S.

[0107] On the other hand, in the detection element 3-1 (second detection element) of FIG. 13, one photodiode 30 (second photodiode) has eight partial photodiodes 30S and lenses 78 (78-1 to 78-8) overlapping each of the eight partial photodiodes 30S, and has a first opening OP1 and a second opening OP2 overlapping each of two partial photodiodes 30S-4 and 30S-5 (see FIG. 8) out of the eight partial photodiodes 30S, and no opening OP is formed in the six partial photodiodes 30S-1, 30S-2, 30S-3, 30S-6, 30S-7, 30S-8 (see FIG. 8).

[0108] Similarly, in the detection element 3-2 of FIG. 13, one photodiode 30 has eight partial photodiodes 30S and lenses 78 (78-1 to 78-8) overlapping each of the eight partial photodiodes 30S, and has a first opening OP1 and a second opening OP2 overlapping one partial photodiode 30S-4 among the eight partial photodiodes 30S, and no opening OP is formed in the seven partial photodiodes 30S-1, 30S-2, 30S-3, 30S-5, 30S-6, 30S-7, and 30S-8.

[0109] Furthermore, in the detection element 3-3 of FIG. 13, one photodiode 30 has eight partial photodiodes 30S and lenses 78 (78-1 to 78-8) overlapping each of the eight partial photodiodes 30S, and has a first opening OP1 and a second opening OP2 overlapping each of seven partial photodiodes 30S-1, 30S-2, 30S-3, 30S-4, 30S-6, 30S-7, and 30S-8 out of the eight partial photodiodes 30S, and no opening OP is formed in one partial photodiode 30S-5.

[0110] In this way, by changing the number of openings OP for each detection element 3, it is possible to make the detection intensity different for each detection element 3.

[0111] Fig. 14 is a cross-sectional view taken along the line XIV-XIV' in Fig. 13. On the partial photodiode 30S-1 of the detection element 3-1 in Fig. 13, a lens 78-1 and a second opening OP2 are formed, but a first opening OP1 is not formed. That is, the partial photodiode 30S-1 is completely covered by the first light-shielding layer 71. The portion where the opening OP is not formed is not limited to the example in which the first opening OP1 of the first light-shielding layer 71 is not formed as in Fig. 14, and may have a structure in which the first opening OP1 is formed but the second opening OP2 is not formed. Furthermore, a structure in which neither the first opening OP1 nor the second opening OP2 is formed may be used. However, in order to make the detection intensity in the detection element 3-1 different from the detection intensity of the other detection elements 3, it is preferable not to form the first opening OP1 in the first light-shielding layer 71 close to the partial photodiode 30S so that the first light-shielding layer 71 completely blocks light in order to reliably prevent the light L2-1, L2-2 that has passed through the second opening OP2 of the detection element 3 from entering the partial photodiode 30S1 of the detection element 3-1.

[0112] In order to differentiate the detection intensities, the lens 78 can be omitted in the locations where the aperture OP is not formed on the partial photodiode 30S as shown in Figures 13 and 14. However, in order to maintain the uniformity of the lens shape in the detection element 3, it is preferable from the viewpoint of manufacturing to form the lens 78 even on the partial photodiode 30S that is not used for detection.

[0113] Although the preferred embodiment of the present invention has been described above, the present invention is not limited to such an embodiment. The contents disclosed in the embodiment are merely examples, and various modifications are possible within the scope of the present invention. Appropriate modifications made within the scope of the present invention naturally belong to the technical scope of the present invention. At least one of various omissions, substitutions, and modifications of components can be made within the scope of the gist of each of the above-mentioned embodiments and each modified example. [Explanation of symbols]

[0114] 1. Detection device 2 Array Board 5 Sensor board 7, 7A, 7B, 7C Optical Filters 10 Sensor section 21 Substrate 29 Protective film 30 Photodiode 30S, 30S-1, 30S-2, 30S-3, 30S-4, 30S-5, 30S-6, 30S-7, 30S-8 Partial photodiode 71 1st light shielding layer 72 Second light shielding layer 73 Filter Layer 74 First transparent resin layer 75 Second transparent resin layer 78, 78-1, 78-2, 78-6, 78-8 Lenses OP Opening OP1 1st opening OP2 Second opening

Claims

1. A detection element formed on a substrate; A photodiode provided in the one detection element; A plurality of partial photodiodes included in the one photodiode; an organic protective film covering the plurality of partial photodiodes; In the one detection element, a plurality of lenses are provided so as to overlap the plurality of partial photodiodes, respectively; a first light-shielding layer provided between the organic protective film and the lenses, the first light-shielding layer having a plurality of first openings provided in regions overlapping the plurality of partial photodiodes in the one detection element; a second light-shielding layer provided between the first light-shielding layer and the lenses, the second light-shielding layer having a plurality of second openings provided in regions overlapping the plurality of partial photodiodes and the plurality of first openings in the one detection element; a first light-transmitting resin layer provided between the first light-shielding layer and the second light-shielding layer; a second light-transmitting resin layer provided between the second light-shielding layer and the plurality of lenses; the first light-shielding layer is provided directly on and in contact with the organic protective film, In the one detection element, the one photodiode further has a connection portion that connects the plurality of partial photodiodes, a width in a first direction perpendicular to an extension direction of the coupling portion is smaller than a width in the first direction of each of the plurality of partial photodiodes; The first openings and the second openings are not provided in an area overlapping with the connecting portion. Detection device.

2. the first light-shielding layer is made of a metal material; the second light-shielding layer is formed of a resin material, The thickness of the first light-shielding layer is smaller than the thickness of the second light-shielding layer. The detection device according to claim 1 .

3. A filter layer that blocks light of a predetermined wavelength band, The filter layer is provided between the first light-shielding layer and the first light-transmitting resin layer, and is in contact with the organic protective film through the first opening.

3. The detection device according to claim 2.

4. A filter layer that blocks light of a predetermined wavelength band, The filter layer is provided between the first light-transmitting resin layer and the second light-shielding layer, and is in contact with the second light-transmitting resin layer through the second opening.

3. The detection device according to claim 2.

5. A filter layer that blocks light of a predetermined wavelength band, The filter layer is provided between the second light-shielding layer and the second light-transmitting resin layer, and is in contact with the first light-transmitting resin layer through the second opening.

3. The detection device according to claim 2.

6. A filter layer that blocks light of a predetermined wavelength band, the filter layer is provided on the second light-transmitting resin layer, The lenses are disposed directly on and in contact with the filter layer.

3. The detection device according to claim 2.

7. The thickness of the second light-transmitting resin layer is smaller than the thickness of the first light-transmitting resin layer. The detection device according to any one of claims 2 to 6.

8. The width of the first opening is smaller than the width of the second opening, The width of the second opening is smaller than the width of the lens. A detection device according to any one of claims 1 to 7.

9. The thickness of the first light-shielding layer is equal to or less than one tenth of the thickness of the second light-shielding layer.

3. The detection device according to claim 2.

10. A glass substrate; a first detection element having a first photodiode and a second detection element having a second photodiode formed in a detection region on the glass substrate; a light-shielding layer that overlaps the first photodiode and the second photodiode in the detection region and has a plurality of openings; The one first photodiode and the one second photodiode each have an equal number of partial photodiodes; a plurality of lenses overlapping each of the first photodiode and the second photodiode; a number of the plurality of openings overlapping the plurality of partial photodiodes in the one first photodiode of the one first detection element and a number of the plurality of openings overlapping the plurality of partial photodiodes in the one second photodiode of the one second detection element are different from each other, Each of the one first photodiode and the one second photodiode further includes a connection portion that connects the plurality of partial photodiodes, a width in a first direction perpendicular to an extension direction of the coupling portion is smaller than a width in the first direction of each of the plurality of partial photodiodes; The plurality of openings are not provided in an area overlapping with the connecting portion. Detection device.

11. The number of overlaps between the plurality of lenses and the first photodiode is equal to the number of overlaps between the plurality of lenses and the second photodiode.

11. The detection device of claim 10.

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