Detection Equipment

Abstract

To provide a detection device which is downsized and furthermore enables acquisition of excellent detection accuracy.SOLUTION: A detection device has: a substrate; a plurality of first electrodes arranged on a first principal surface of the substrate; a plurality of photodiodes provided in such a way as to correspond to the plurality of first electrodes, each including a first carrier transport layer, an active layer, and a second carrier transport layer; a second electrode provided striding over the plurality of photodiodes; a back light provided on a second principal surface side opposite to the first principal surface of the substrate; a plurality of light-shielding layers provided between the back light and the plurality of photodiodes; and a translucent region formed between the plurality of adjacent light-shielding layers.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a detection device. [Background technology]

[0002] Optical sensors capable of detecting fingerprint patterns and vein patterns are known (for example, Patent Document 1). Among such optical sensors, sensors having a plurality of photodiodes using an organic semiconductor material as an active layer are known. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2009-32005 A Summary of the Invention [Problem to be solved by the invention]

[0004] In such an optical sensor, it is required to realize good detection accuracy while miniaturizing the entire device including the light source. Various structures are known for the arrangement relationship between the optical sensor, the object to be detected such as a finger, and the light source that irradiates the object to be detected. For example, in a configuration in which the light source is arranged above the object to be detected, that is, in a configuration in which the object to be detected is sandwiched between the optical sensor and the light source, the module structure becomes complicated and miniaturization may be difficult. Alternatively, in a configuration in which the light source is arranged to the side of the object to be detected, the in-plane distribution of the amount of light detected by the optical sensor may be large.

[0005] An object of the present invention is to provide a detection device that can achieve good detection accuracy while being miniaturized. [Means for solving the problem]

[0006] A detection device of one embodiment of the present invention includes a substrate, a plurality of first electrodes arranged on a first main surface of the substrate, a plurality of photodiodes corresponding to the plurality of first electrodes and including a first carrier transport layer, an active layer and a second carrier transport layer, a second electrode arranged across the plurality of photodiodes, a backlight arranged on a second main surface side opposite the first main surface of the substrate, a plurality of light-shielding layers arranged between the backlight and the plurality of photodiodes, and a light-transmitting region formed between adjacent plurality of the light-shielding layers. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a cross-sectional view showing a schematic cross-sectional configuration of a detection device according to a first embodiment. [Diagram 2] FIG. 2 is a plan view showing the detection device according to the first embodiment. [Diagram 3] FIG. 3 is a block diagram showing an example of the configuration of the detection device according to the first embodiment. [Figure 4] FIG. 4 is a circuit diagram showing the detection device. [Diagram 5] FIG. 5 is a circuit diagram showing a plurality of partial detection areas. [Figure 6] FIG. 6 is a timing waveform diagram showing an example of the operation of the detection device. [Figure 7] FIG. 7 is a timing waveform diagram showing an example of operation during the readout period in FIG. [Figure 8] FIG. 8 is an enlarged schematic diagram of the sensor unit. [Figure 9] FIG. 9 is a cross-sectional view taken along line IX-IX' of FIG. [Figure 10] FIG. 10 is an enlarged schematic configuration diagram of a sensor unit of a detection device according to a second embodiment. [Figure 11] FIG. 11 is an enlarged schematic diagram showing a part of a sensor unit of a detection device according to a second embodiment. [Figure 12] FIG. 12 is a cross-sectional view taken along line XII-XII' of FIG. [Figure 13] FIG. 13 is a cross-sectional view taken along line XIII-XIII' of FIG. [Figure 14] FIG. 14 is an enlarged schematic configuration diagram of a sensor unit of a detection device according to a third embodiment. [Figure 15] FIG. 15 is a cross-sectional view taken along line XV-XV' of FIG. [Figure 16] FIG. 16 is an enlarged schematic configuration diagram of a sensor unit of a detection device according to a fourth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] The form (embodiment) for carrying out the present invention will be described in detail with reference to the drawings. The present disclosure is not limited by the contents described in the following embodiments. The components described below include those that a person skilled in the art can easily imagine and those that are substantially the same. Furthermore, the components described below can be appropriately combined. Note that the disclosure is merely an example, and those that a person skilled in the art can easily imagine appropriate modifications while maintaining the gist of the present disclosure are naturally included in the scope of the present disclosure. In addition, in order to make the explanation clearer, the drawings may be schematic in terms of the width, thickness, shape, etc. of each part compared to the actual embodiment, but they are merely examples and do not limit the interpretation of the present disclosure. In addition, in this disclosure and each figure, elements similar to those described above with respect to the previously mentioned figures may be given the same reference numerals, and detailed explanations may be omitted as appropriate.

[0009] In this specification and the claims, when expressing an aspect of arranging another structure on top of a certain structure, the term "on top" is used, unless otherwise specified, to include both a case in which another structure is arranged directly on top of a certain structure so as to be in contact with the certain structure, and a case in which another structure is arranged above a certain structure via yet another structure.

[0010] (First embodiment) Fig. 1 is a cross-sectional view showing a schematic cross-sectional configuration of a detection device according to the first embodiment. As shown in Fig. 1, the detection device 1 includes an array substrate 2, a light guide section 7, an adhesive layer 124, a cover member 125, and a backlight 121. In a direction perpendicular to a first main surface S1 of the array substrate 2, the backlight 121, the array substrate 2, the light guide section 7, the adhesive layer 124, and the cover member 125 are laminated in this order.

[0011] The array substrate 2 is formed using a sensor base material 21 as a base. The array substrate 2 has a plurality of light-shielding layers 25 and a plurality of photodiodes PD provided on the first main surface S1 side of the sensor base material 21. The configuration of the array substrate 2 shown in Fig. 1 is merely a schematic view, and the detailed configurations of the plurality of light-shielding layers 25 and the plurality of photodiodes PD of the array substrate 2 will be described later with reference to Figs. 8 and 9.

[0012] The light guide 7 is disposed opposite the photodiodes PD and between the photodiodes PD and a detection object such as a finger Fg. The light guide 7 has a plurality of light guide paths and a light shielding portion provided around the light guide paths. At least a portion of the light guide paths overlaps the photodiode PD. The light shielding portion has a higher light absorption rate than the light guide paths. The light guide 7 is an optical element that transmits a component of the light L2 reflected by the detection object such as a finger Fg, which travels in a predetermined direction, toward the photodiode PD. The light guide 7 is also called a collimator aperture or a collimator. The light guide 7 is not limited to a configuration in which the light guide paths are formed in a columnar shape, and various configurations can be applied.

[0013] The cover member 125 is a member for protecting the array substrate 2 and the light guiding section 7, and covers the array substrate 2 and the light guiding section 7. The cover member 125 is, for example, a glass substrate. Note that the cover member 125 is not limited to a glass substrate, and may be a resin substrate or the like, or may be configured to have a multi-layer structure in which these substrates are laminated. The cover member 125 is adhered to the surface of the light guiding section 7 via an adhesive layer 124. However, the adhesive layer 124 may not be provided. Alternatively, the cover member 125 may not be provided. In this case, a protective layer such as an insulating film is provided on the surfaces of the array substrate 2 and the light guiding section 7, and the finger Fg comes into contact with the protective layer of the detection device 1.

[0014] The backlight 121 is disposed facing a second main surface S2 opposite to the first main surface S1 of the sensor substrate 21. The backlight 121 has, for example, a light guide plate 122 and a plurality of light sources 123 lined up at one end of the light guide plate 122. Light emitted from the light sources 123 of the backlight 121 travels inside the light guide plate 122, and some of the light L1, L1a is emitted from the light guide plate 122 towards a detection object such as a finger Fg. For example, a light emitting diode (LED) that emits light of a predetermined color is used as the light source.

[0015] In this embodiment, the array substrate 2 has a light-shielding region that overlaps with the light-shielding layer 25 and various wirings, and a light-transmitting region 2a that does not overlap with the light-shielding layer 25 and various wirings. The light-shielding layer 25 is disposed between the backlight 121 and the photodiode PD in a direction perpendicular to the first main surface S1. In other words, in the detection device 1, the backlight 121, the multiple light-shielding layers 25, and the multiple photodiodes PD are stacked in this order in the light-shielding region.

[0016] In the light-transmitting region 2a, light L1 out of the light irradiated from the backlight 121 is transmitted through the light-transmitting region 2a of the array substrate 2 and irradiated toward a detection object such as a finger Fg. Light L2 reflected by a detection object such as a finger Fg is received by the photodiode PD via the light guide 7. On the other hand, in the light-shielding region, light L1a out of the light irradiated from the backlight 121 is shielded by the light-shielding layer 25 and is not irradiated toward the photodiode PD and the detection object such as a finger Fg above the light-shielding layer 25.

[0017] With this configuration, the photodiode PD of the detection device 1 is mainly irradiated with the light L2 reflected from the detection object such as the finger Fg, and light other than the light L2 from the detection object such as the finger Fg (for example, the light L1a directly irradiated from the backlight 121) can be prevented from being irradiated with the photodiode PD. Therefore, the detection device 1 having the backlight 121 can improve the detection accuracy.

[0018] The light L1 emitted from the light source 123 is mainly reflected by the surface of the object to be detected such as a finger Fg and enters the photodiodes PD. As a result, the detection device 1 can detect a fingerprint by detecting the shape of the unevenness of the surface of the finger Fg. Alternatively, a part of the light L1 emitted from the light source 123 is reflected inside the finger Fg and enters the photodiodes PD. As a result, the detection device 1 can detect information about a living body inside the finger Fg. The information about a living body is, for example, a pulse wave, a pulse, a blood vessel image, etc. of a finger or a palm. That is, the detection device 1 may be configured as a fingerprint detection device that detects a fingerprint, or a vein detection device that detects a blood vessel pattern such as a vein. The light L1 emitted from the light source 123 is set to a wavelength (from a visible light region to a near-infrared light region) according to the detection object. The light source 123 is not limited to one type, and multiple types having different wavelengths may be provided.

[0019] The configuration of the backlight 121 is merely an example and may be changed as appropriate. For example, the arrangement of the light source 123 is not limited to one end of the light guide plate 122, and may be arranged at both ends of the light guide plate 122. Various optical sheets such as a prism sheet and a light diffusion sheet may be laminated on the surface of the light guide plate 122 facing the second main surface S2. In addition, the backlight 121 is not limited to a configuration having the light guide plate 122. For example, when the detection device 1 is configured as a flexible sensor, a flexible OLED light source can be adopted as the backlight 121. The flexible OLED light source has a flexible light source substrate and an organic EL element (OLED: Organic Light Emitting Diode) formed as a light source on the light source substrate.

[0020] Fig. 2 is a plan view showing the detection device according to the first embodiment. As shown in Fig. 2, the detection device 1 has a sensor base material 21 (array substrate 2), a sensor unit 10, a gate line driving circuit 15, a signal line selection circuit 16, a detection circuit 48, a control circuit 102, and a power supply circuit 103.

[0021] The control board 101 is electrically connected to the sensor base material 21 via a flexible printed circuit board 110. The flexible printed circuit board 110 is provided with a detection circuit 48. The control board 101 is provided with a control circuit 102 and a power supply circuit 103. The control circuit 102 is, for example, an FPGA (Field Programmable Gate Array). The control circuit 102 supplies control signals to the sensor unit 10, the gate line driving circuit 15, and the signal line selection circuit 16 to control the detection operation of the sensor unit 10. The control circuit 102 also supplies a control signal to the backlight 121 (see FIG. 1) to control the lighting or non-lighting of the light source 123. The power supply circuit 103 supplies voltage signals such as a sensor power supply signal VDDSNS (see FIG. 4) to the sensor unit 10, the gate line driving circuit 15, and the signal line selection circuit 16. The power supply circuit 103 also supplies a power supply voltage to the light source 123.

[0022] The sensor substrate 21 has a detection area AA and a peripheral area GA. The detection area AA is an area in which a plurality of photodiodes PD of the sensor unit 10 are provided. The peripheral area GA is an area between the outer periphery of the detection area AA and the end of the sensor substrate 21, and is an area in which the plurality of photodiodes PD are not provided.

[0023] The gate line driving circuit 15 and the signal line selection circuit 16 are provided in the peripheral area GA. Specifically, the gate line driving circuit 15 is provided in a region of the peripheral area GA extending along the second direction Dy. The signal line selection circuit 16 is provided in a region of the peripheral area GA extending along the first direction Dx, and is provided between the sensor unit 10 and the detection circuit 48.

[0024] In the following description, the first direction Dx is a direction in a plane parallel to the sensor substrate 21. The second direction Dy is a direction in a plane parallel to the sensor substrate 21, and is a direction perpendicular to the first direction Dx. The second direction Dy may intersect the first direction Dx without being perpendicular to it. The third direction Dz is a direction perpendicular to the first direction Dx and the second direction Dy, and is a normal direction to the first main surface S1 of the sensor substrate 21. In addition, "planar view" refers to the positional relationship when viewed from a direction perpendicular to the sensor substrate 21.

[0025] Each of the partial detection areas PAA of the sensor unit 10 is an optical sensor having a photodiode PD as a sensor element. The photodiode PD is a photoelectric conversion element, and outputs an electrical signal according to the light irradiated thereto. More specifically, the photodiode PD is an OPD (Organic Photo Diode). The partial detection areas PAA (photodiodes PD) are arranged in a matrix in the detection area AA.

[0026] Fig. 3 is a block diagram showing an example of the configuration of the detection device according to the first embodiment. As shown in Fig. 3, the detection device 1 further includes a detection control unit 11 and a detection unit 40. A part or all of the functions of the detection control unit 11 are included in a control circuit 102. In addition, a part or all of the functions of the detection unit 40 other than the detection circuit 48 are included in the control circuit 102.

[0027] The sensor unit 10 has a plurality of photodiodes PD. The photodiodes PD of the sensor unit 10 output an electric signal corresponding to the irradiated light as a detection signal Vdet to the signal line selection circuit 16. The sensor unit 10 also performs detection according to a gate drive signal Vgcl supplied from the gate line drive circuit 15.

[0028] The detection control unit 11 is a circuit that supplies control signals to the gate line driving circuit 15, the signal line selection circuit 16, and the detection unit 40, respectively, and controls their operations. The detection control unit 11 supplies various control signals, such as a start signal STV, a clock signal CK, and a reset signal RST1, to the gate line driving circuit 15. The detection control unit 11 also supplies various control signals, such as a selection signal ASW, to the signal line selection circuit 16. The detection control unit 11 also supplies various control signals to the backlight 121, and controls the lighting and non-lighting of the light source 123.

[0029] The gate line driving circuit 15 is a circuit that drives multiple gate lines GCL (see FIG. 4) based on various control signals. The gate line driving circuit 15 sequentially or simultaneously selects multiple gate lines GCL and supplies a gate driving signal Vgcl to the selected gate lines GCL. In this way, the gate line driving circuit 15 selects multiple photodiodes PD connected to the gate lines GCL.

[0030] The signal line selection circuit 16 is a switch circuit that sequentially or simultaneously selects a plurality of signal lines SGL (see FIG. 4). The signal line selection circuit 16 is, for example, a multiplexer. The signal line selection circuit 16 connects the selected signal line SGL to the detection circuit 48 based on a selection signal ASW supplied from the detection control unit 11. As a result, the signal line selection circuit 16 outputs a detection signal Vdet of the photodiode PD to the detection unit 40.

[0031] The detection unit 40 includes a detection circuit 48, a signal processing unit 44, a coordinate extraction unit 45, a storage unit 46, a detection timing control unit 47, an image processing unit 49, and an output processing unit 50. Based on a control signal supplied from the detection control unit 11, the detection timing control unit 47 controls the detection circuit 48, the signal processing unit 44, the coordinate extraction unit 45, and the image processing unit 49 so that they operate in synchronization with each other.

[0032] The detection circuit 48 is, for example, an analog front-end circuit (AFE). The detection circuit 48 is a signal processing circuit having at least the functions of a detection signal amplifier 42 and an A / D converter 43. The detection signal amplifier 42 amplifies the detection signal Vdet. The A / D converter 43 converts the analog signal output from the detection signal amplifier 42 into a digital signal.

[0033] The signal processing unit 44 is a logic circuit that detects a predetermined physical quantity input to the sensor unit 10 based on the output signal of the detection circuit 48. When a finger is in contact with or close to the detection surface, the signal processing unit 44 can detect unevenness on the surface of the finger or palm based on the signal from the detection circuit 48. The signal processing unit 44 can also detect information about the living body based on the signal from the detection circuit 48. The information about the living body is, for example, an image of blood vessels in the finger or palm, a pulse wave, a pulse rate, a blood oxygen concentration, etc.

[0034] Furthermore, the signal processing unit 44 may acquire detection signals Vdet (information about a living body) simultaneously detected by a plurality of photodiodes PD and execute a process of averaging these. In this case, the detection unit 40 can suppress measurement errors caused by noise and relative positional deviation between the detection object such as a finger and the sensor unit 10, enabling stable detection.

[0035] The storage unit 46 temporarily stores the signal calculated by the signal processing unit 44. The storage unit 46 may be, for example, a RAM (Random Access Memory), a register circuit, or the like.

[0036] The coordinate extraction unit 45 is a logic circuit that determines the detection coordinates of the unevenness of the surface of the finger or the like when the contact or proximity of the finger is detected in the signal processing unit 44. The coordinate extraction unit 45 is also a logic circuit that determines the detection coordinates of the blood vessels of the finger or the palm. The image processing unit 49 combines the detection signals Vdet output from each photodiode PD of the sensor unit 10 to generate two-dimensional information indicating the shape of the unevenness of the surface of the finger or the like and two-dimensional information indicating the shape of the blood vessels of the finger or the palm. The coordinate extraction unit 45 may output the detection signal Vdet as the sensor output voltage Vo without calculating the detection coordinates. The coordinate extraction unit 45 and the image processing unit 49 may not be included in the detection unit 40.

[0037] The output processing unit 50 functions as a processing unit that performs processing based on outputs from the multiple photodiodes PD. The output processing unit 50 may include the detection coordinates obtained by the coordinate extraction unit 45, the two-dimensional information generated by the image processing unit 49, and the like in the sensor output voltage Vo. Furthermore, the function of the output processing unit 50 may be integrated into another configuration (for example, the image processing unit 49, etc.).

[0038] Next, an example of the circuit configuration of the detection device 1 will be described. Fig. 4 is a circuit diagram showing the detection device. As shown in Fig. 4, the sensor unit 10 has a plurality of partial detection areas PAA arranged in a matrix. A photodiode PD is provided in each of the partial detection areas PAA.

[0039] The gate line GCL extends in a first direction Dx and is connected to a plurality of partial detection areas PAA arranged in the first direction Dx. The plurality of gate lines GCL(1), GCL(2), ..., GCL(8) are arranged in a second direction Dy and are each connected to a gate line driving circuit 15. In the following description, when there is no need to distinguish between the plurality of gate lines GCL(1), GCL(2), ..., GCL(8), they are simply referred to as gate lines GCL. In addition, in FIG. 4, eight gate lines GCL are shown for ease of explanation, but this is merely an example, and M gate lines GCL (M is 8 or more, for example, M=256) may be arranged.

[0040] The signal line SGL extends in the second direction Dy and is connected to the photodiodes PD of the partial detection areas PAA arranged in the second direction Dy. The signal lines SGL(1), SGL(2), ..., SGL(12) are arranged in the first direction Dx and are each connected to the signal line selection circuit 16 and the reset circuit 17. In the following description, when it is not necessary to distinguish between the signal lines SGL(1), SGL(2), ..., SGL(12), they will simply be referred to as signal lines SGL.

[0041] For ease of understanding, 12 signal lines SGL are shown, but this is merely an example, and N signal lines SGL (N is 12 or more, for example, N=252) may be arranged. The resolution of the sensor is, for example, 508 dpi (dots per inch), and the number of cells is 252×256. In FIG. 4, the sensor unit 10 is provided between the signal line selection circuit 16 and the reset circuit 17. However, this is not limiting, and the signal line selection circuit 16 and the reset circuit 17 may be connected to the ends of the signal lines SGL in the same direction.

[0042] The gate line driving circuit 15 receives various control signals, such as a start signal STV, a clock signal CK, and a reset signal RST1, from the control circuit 102 (see FIG. 2). The gate line driving circuit 15 sequentially selects the multiple gate lines GCL(1), GCL(2), ..., GCL(8) in a time-division manner based on the various control signals. The gate line driving circuit 15 supplies a gate driving signal Vgcl to the selected gate line GCL. As a result, the gate driving signal Vgcl is supplied to the multiple first switching elements Tr connected to the gate line GCL, and the multiple partial detection areas PAA arranged in the first direction Dx are selected as detection targets.

[0043] The signal line selection circuit 16 has a plurality of selection signal lines Lsel, a plurality of output signal lines Lout, and a third switching element TrS. The plurality of third switching elements TrS are provided corresponding to the plurality of signal lines SGL, respectively. The six signal lines SGL(1), SGL(2), ..., SGL(6) are connected to a common output signal line Lout1. The six signal lines SGL(7), SGL(8), ..., SGL(12) are connected to a common output signal line Lout2. The output signal lines Lout1, Lout2 are each connected to a detection circuit 48.

[0044] Here, the signal lines SGL(1), SGL(2), ..., SGL(6) are defined as a first signal line block, and the signal lines SGL(7), SGL(8), ..., SGL(12) are defined as a second signal line block. The multiple selection signal lines Lsel are each connected to the gate of the third switching element TrS included in one signal line block. Furthermore, one selection signal line Lsel is connected to the gate of the third switching element TrS of multiple signal line blocks.

[0045] The control circuit 102 (see FIG. 2) sequentially supplies the selection signal ASW to the selection signal line Lsel. As a result, the signal line selection circuit 16 sequentially selects the signal lines SGL in one signal line block in a time-division manner by the operation of the third switching element TrS. The signal line selection circuit 16 also selects one signal line SGL from each of the multiple signal line blocks. With this configuration, the detection device 1 can reduce the number of ICs (Integrated Circuits) including the detection circuit 48 or the number of IC terminals. The signal line selection circuit 16 may also bundle multiple signal lines SGL together and connect them to the detection circuit 48.

[0046] As shown in Fig. 4, the reset circuit 17 has a reference signal line Lvr, a reset signal line Lrst, and a fourth switching element TrR. The fourth switching element TrR is provided corresponding to the multiple signal lines SGL. The reference signal line Lvr is connected to one of the sources or drains of the multiple fourth switching elements TrR. The reset signal line Lrst is connected to the gates of the multiple fourth switching elements TrR.

[0047] The control circuit 102 supplies a reset signal RST2 to the reset signal line Lrst. This turns on the multiple fourth switching elements TrR, and the multiple signal lines SGL are electrically connected to the reference signal line Lvr. The power supply circuit 103 supplies a reference signal COM to the reference signal line Lvr. This causes the reference signal COM to be supplied to the capacitive elements Ca (see FIG. 5) included in the multiple partial detection areas PAA.

[0048] Fig. 5 is a circuit diagram showing a plurality of partial detection areas. Fig. 5 also shows the circuit configuration of a detection circuit 48. As shown in Fig. 5, the partial detection area PAA includes a photodiode PD, a capacitance element Ca, and a first switching element Tr. The capacitance element Ca is a capacitance (sensor capacitance) formed in the photodiode PD, and is equivalently connected in parallel with the photodiode PD.

[0049] 5 shows two gate lines GCL(m) and GCL(m+1) arranged in the second direction Dy among the multiple gate lines GCL. Also, two signal lines SGL(n) and SGL(n+1) arranged in the first direction Dx among the multiple signal lines SGL. The partial detection area PAA is an area surrounded by the gate lines GCL and the signal lines SGL.

[0050] The first switching elements Tr are provided corresponding to the plurality of photodiodes PD, respectively. The first switching elements Tr are configured with thin film transistors, and in this example, are configured with n-channel MOS (Metal Oxide Semiconductor) type TFTs (Thin Film Transistors).

[0051] The gates of the first switching elements Tr belonging to the partial detection areas PAA aligned in the first direction Dx are connected to the gate line GCL. The sources of the first switching elements Tr belonging to the partial detection areas PAA aligned in the second direction Dy are connected to the signal line SGL. The drains of the first switching elements Tr are connected to the cathodes of the photodiodes PD and the capacitance elements Ca.

[0052] A sensor power supply signal VDDSNS is supplied to the anode of the photodiode PD from the power supply circuit 103. In addition, a reference signal COM, which becomes the initial potential of the signal line SGL and the capacitance element Ca, is supplied from the power supply circuit 103 to the signal line SGL and the capacitance element Ca.

[0053] When light is irradiated onto the partial detection area PAA, a current corresponding to the amount of light flows through the photodiode PD, causing charge to accumulate in the capacitance element Ca. When the first switching element Tr is turned on, a current flows through the signal line SGL corresponding to the charge accumulated in the capacitance element Ca. The signal line SGL is connected to the detection circuit 48 via the third switching element TrS of the signal line selection circuit 16. This allows the detection device 1 to detect a signal corresponding to the amount of light irradiated onto the photodiode PD for each partial detection area PAA or for each block.

[0054] In the detection circuit 48, the switch SSW is turned on during the readout period Pdet (see FIG. 6) and the detection circuit 48 is connected to the signal line SGL. The detection signal amplifier 42 of the detection circuit 48 converts the fluctuation of the current supplied from the signal line SGL into a fluctuation of the voltage and amplifies it. A reference potential (Vref) having a fixed potential is input to the non-inverting input terminal (+) of the detection signal amplifier 42, and the signal line SGL is connected to the inverting input terminal (-). In the embodiment, a signal that is the same as the reference signal COM is input as the reference potential (Vref) voltage. The signal processor 44 (see FIG. 3) calculates the difference between the detection signal Vdet when light is irradiated and the detection signal Vdet when light is not irradiated as the sensor output voltage Vo. In addition, the detection signal amplifier 42 has a capacitance element Cb and a reset switch RSW. In the reset period Prst (see FIG. 6), the reset switch RSW is turned on and the charge of the capacitance element Cb is reset.

[0055] Next, an operation example of the detection device 1 will be described. FIG. 6 is a timing waveform diagram showing an operation example of the detection device. As shown in FIG. 6, the detection device 1 has a reset period Prst, an exposure period Pex, and a readout period Pdet. The power supply circuit 103 supplies a sensor power supply signal VDDSNS to the anode of the photodiode PD over the reset period Prst, the exposure period Pex, and the readout period Pdet. The sensor power supply signal VDDSNS is a signal that applies a reverse bias between the anode and cathode of the photodiode PD. For example, a reference signal COM of substantially 0.75V is applied to the cathode of the photodiode PD, and a sensor power supply signal VDDSNS of substantially -1.25V is applied to the anode, so that the anode and cathode are reverse biased at substantially 2.0V. The control circuit 102 sets the reset signal RST2 to "H" and then supplies a start signal STV and a clock signal CK to the gate line driving circuit 15, and the reset period Prst begins. In the reset period Prst, the control circuit 102 supplies the reference signal COM to the reset circuit 17 and turns on the fourth switching element TrR for supplying a reset voltage by the reset signal RST2. As a result, the reference signal COM is supplied as a reset voltage to each signal line SGL. The reference signal COM is set to, for example, 0.75 V.

[0056] In the reset period Prst, the gate line driving circuit 15 sequentially selects the gate lines GCL based on the start signal STV, the clock signal CK, and the reset signal RST1. The gate line driving circuit 15 sequentially supplies the gate lines GCL with the gate driving signals Vgcl {Vgcl(1) to Vgcl(M)}. The gate driving signal Vgcl has a pulse-like waveform having a power supply voltage VDD, which is a high-level voltage, and a power supply voltage VSS, which is a low-level voltage. In FIG. 6, M (for example, M=256) gate lines GCL are provided, and the gate driving signals Vgcl(1), ..., Vgcl(M) are sequentially supplied to each gate line GCL, and the first switching elements Tr are sequentially turned on for each row, and a reset voltage is supplied. For example, the voltage of 0.75V of the reference signal COM is supplied as the reset voltage.

[0057] As a result, in the reset period Prst, the capacitance elements Ca in all the partial detection areas PAA are sequentially electrically connected to the signal line SGL and the reference signal COM is supplied. As a result, the capacitance of the capacitance elements Ca is reset. It is also possible to reset the capacitance of some of the capacitance elements Ca in the partial detection area PAA by partially selecting the gate lines and the signal lines SGL.

[0058] Examples of exposure timing include a gate line non-selection exposure control method and a constant exposure control method. In the gate line non-selection exposure control method, gate drive signals {Vgcl(1)-(M)} are sequentially supplied to all gate lines GCL connected to the photodiode PD to be detected, and a reset voltage is supplied to all photodiodes PD to be detected. After that, when all gate lines GCL connected to the photodiode PD to be detected are at a low voltage (the first switching element Tr is off), exposure starts, and exposure is performed during the exposure period Pex. When exposure ends, as described above, gate drive signals {Vgcl(1)-(M)} are sequentially supplied to the gate lines GCL connected to the photodiode PD to be detected, and reading is performed during the readout period Pdet. In the constant exposure control method, it is also possible to control exposure to be performed during the reset period Prst and readout period Pdet (constant exposure control). In this case, the exposure period Pex(1) starts after the gate drive signal Vgcl(1) is supplied to the gate lines GCL during the reset period Prst. Here, the exposure period Pex{(1)...(M)} is a period during which the photodiode PD charges the capacitance element Ca. The charge stored in the capacitance element Ca during the reset period Prst flows in the photodiode PD as a reverse current (from the cathode to the anode) due to light irradiation, and the potential difference of the capacitance element Ca decreases. Note that the actual exposure periods Pex(1), ..., Pex(M) in the partial detection area PAA corresponding to each gate line GCL have different start and end timings. The exposure periods Pex(1), ..., Pex(M) each start when the gate drive signal Vgcl changes from the high-level voltage of the power supply voltage VDD to the low-level voltage of the power supply voltage VSS during the reset period Prst. Also, the exposure periods Pex(1), ..., Pex(M) each end when the gate drive signal Vgcl changes from the power supply voltage VSS to the power supply voltage VDD during the readout period Pdet. The exposure time lengths of the exposure periods Pex(1), . . . , Pex(M) are equal.

[0059] In the gate line non-selection exposure control method, in the exposure periods Pex{(1)...(M)}, a current flows in each partial detection area PAA according to the light irradiated to the photodiode PD. As a result, a charge is accumulated in each capacitance element Ca.

[0060] Before the readout period Pdet starts, the control circuit 102 sets the reset signal RST2 to a low-level voltage. This stops the operation of the reset circuit 17. The reset signal may be set to a high-level voltage only during the reset period Prst. During the readout period Pdet, as in the reset period Prst, the gate line driving circuit 15 sequentially supplies gate driving signals Vgcl(1), ..., Vgcl(M) to the gate lines GCL.

[0061] Specifically, the gate line driving circuit 15 supplies a gate driving signal Vgcl(1) of a high-level voltage (power supply voltage VDD) to the gate line GCL(1) during a period V(1). The control circuit 102 sequentially supplies selection signals ASW1, ..., ASW6 to the signal line selection circuit 16 during the period in which the gate driving signal Vgcl(1) is at a high-level voltage (power supply voltage VDD). As a result, the signal lines SGL of the partial detection area PAA selected by the gate driving signal Vgcl(1) are sequentially or simultaneously connected to the detection circuit 48. As a result, the detection signal Vdet is supplied to the detection circuit 48 for each partial detection area PAA.

[0062] Similarly, the gate line driving circuit 15 supplies high-level voltage gate driving signals Vgcl(2), ..., Vgcl(M-1), Vgcl(M) to the gate lines GCL(2), ..., GCL(M-1), GCL(M) during periods V(2), ..., V(M-1), V(M). That is, the gate line driving circuit 15 supplies the gate driving signal Vgcl to the gate line GCL during each period V(1), V(2), ..., V(M-1), V(M). During each period in which each gate driving signal Vgcl is at a high level voltage, the signal line selection circuit 16 sequentially selects the signal lines SGL based on the selection signal ASW. The signal line selection circuit 16 sequentially connects each signal line SGL to one detection circuit 48. As a result, during the readout period Pdet, the detection device 1 can output the detection signals Vdet of all partial detection areas PAA to the detection circuit 48.

[0063] Fig. 7 is a timing waveform diagram showing an example of operation during the readout period in Fig. 6. Below, with reference to Fig. 7, an example of operation during the supply period Readout of one gate drive signal Vgcl(j) in Fig. 6 will be described. In Fig. 6, the first gate drive signal Vgcl(1) is given the symbol of the supply period Readout, but the same is true for the other gate drive signals Vgcl(2), ..., Vgcl(M). j is any natural number from 1 to M.

[0064] As shown in FIG. 7 and FIG. 5, the output voltage (V out) is reset to a reference potential (Vref) voltage in advance. The reference potential (Vref) voltage is a reset voltage, for example, 0.75V. Next, the gate drive signal Vgcl(j) goes high, the first switching element Tr of the row is turned on, and the signal line SGL of each row goes to a voltage according to the charge stored in the capacitance (capacitor element Ca) of the partial detection area PAA. After a period t1 has elapsed since the rising edge of the gate drive signal Vgcl(j), a period t2 occurs during which the selection signal ASW(k) goes high. When the selection signal ASW(k) goes high and the third switching element TrS is turned on, the output voltage (V out ) (see FIG. 5) changes to a voltage according to the charge accumulated in the capacitance (capacitor element Ca) of the partial detection area PAA (period t3). In the example of FIG. 7, this voltage drops from the reset voltage as in period t3. After that, when the switch SSW is turned on (period t4 when the SSW signal is at a high level), the charge accumulated in the capacitance (capacitor element Ca) of the partial detection area PAA moves to the capacitance (capacitor element Cb) of the detection signal amplifier 42 of the detection circuit 48, and the output voltage of the detection signal amplifier 42 becomes a voltage according to the charge accumulated in the capacitor element Cb. At this time, the inverting input section of the detection signal amplifier 42 becomes the imaginary short potential of the operational amplifier, so that it has returned to the reference potential (Vref). The output voltage of the detection signal amplifier 42 is read out by the A / D converter 43. In the example of Fig. 7, the waveforms of the selection signals ASW(k), ASW(k+1), ... corresponding to the signal lines SGL of each column become high to sequentially turn on the third switching elements TrS, and similar operations are sequentially performed to sequentially read out the charges accumulated in the capacitances (capacitive elements Ca) of the partial detection areas PAA connected to the gate lines GCL. Note that ASW(k), ASW(k+1), ... in Fig. 7 are, for example, any of ASW1 to ASW6 in Fig. 4.

[0065] Specifically, when a period t4 occurs during which the switch SSW is on, charge moves from the capacitance (capacitor element Ca) of the partial detection area PAA to the capacitance (capacitor element Cb) of the detection signal amplifier 42 of the detection circuit 48. At this time, the non-inverting input (+) of the detection signal amplifier 42 is biased to a reference potential (Vref) voltage (for example, 0.75 [V]). For this reason, an imaginary short between the inputs of the detection signal amplifier 42 causes the output voltage (V out ) also becomes the reference potential (Vref) voltage. The voltage of the capacitance element Cb becomes a voltage according to the charge accumulated in the capacitance (capacitance element Ca) of the partial detection area PAA where the third switching element TrS is turned on in response to the selection signal ASW(k). The output voltage of the detection signal amplifier 42 becomes the output voltage (V out ) becomes the reference potential (Vref) voltage, then becomes a voltage according to the capacitance of the capacitive element Cb, and this output voltage is read by the A / D conversion unit 43. Note that the voltage of the capacitive element Cb is, for example, the voltage between two electrodes provided in the capacitor that constitutes the capacitive element Cb.

[0066] The period t1 is, for example, 20 [μs], the period t2 is, for example, 60 [μs], the period t3 is, for example, 44.7 [μs], and the period t4 is, for example, 0.98 [μs].

[0067] 6 and 7 show an example in which the gate line driving circuit 15 selects the gate lines GCL individually, but the present invention is not limited to this. The gate line driving circuit 15 may simultaneously select a predetermined number of gate lines GCL (two or more) and sequentially supply the gate driving signal Vgcl to each of the predetermined number of gate lines GCL. The signal line selection circuit 16 may also simultaneously connect a predetermined number of signal lines SGL (two or more) to one detection circuit 48. Furthermore, the gate line driving circuit 15 may scan a plurality of gate lines GCL by thinning them out.

[0068] Next, the configuration of the photodiode PD will be described. Fig. 8 is an enlarged schematic configuration diagram of the sensor part. In Fig. 8, in order to make the drawing easier to see, the active layer 31 containing an organic semiconductor material is shown among the laminated structure constituting the photodiode PD.

[0069] 8, the array substrate 2 includes various transistors such as the first switching element Tr formed on the sensor base material 21, and various wirings such as a light-shielding layer 25, a gate line GCL, and a signal line SGL. The light-transmitting region 2a is a region surrounded by the gate line GCL and the signal line SGL that does not overlap with the first switching element Tr and the light-shielding layer 25. The light-shielding region is a region that overlaps with the first switching element Tr and the light-shielding layer 25.

[0070] The first switching element Tr has a semiconductor layer 61, a source electrode 62 (see FIG. 9), a drain electrode 63, and a gate electrode 64. The semiconductor layer 61 extends along the gate line GCL and is provided so as to intersect with the gate electrode 64 in a plan view. The gate electrode 64 is connected to the gate line GCL and extends in a direction perpendicular to the gate line GCL. One end side of the semiconductor layer 61 is connected to the source electrode 62 via a second contact hole CH2 (see FIG. 9). The source electrode 62 is connected to the light-shielding layer 25. The light-shielding layer 25 is electrically connected to the first electrode 23 and the photodiode PD via a first contact hole CH1 formed in the organic insulating film 94 and the barrier film 26 (see FIG. 9). The other end side of the semiconductor layer 61 is connected to the drain electrode 63 via a third contact hole CH3. The drain electrode 63 is connected to the signal line SGL.

[0071] 8 is merely an example and may be modified as appropriate. For example, the first switching element Tr has a so-called double gate structure in which two gate electrodes 64 are provided intersecting with the semiconductor layer 61, but a single gate electrode 64 may be provided intersecting with the semiconductor layer 61.

[0072] As shown in FIG. 8, the first electrodes 23 and the photodiodes PD are provided on the light-shielding layer 25. The first electrodes 23, the photodiodes PD, and the light-shielding layer 25 are provided in an island shape in a region surrounded by the gate lines GCL and the signal lines SGL. In this embodiment, a light-transmitting region 2a is formed around the first electrodes 23, the photodiodes PD, and the light-shielding layer 25, except for a portion connected to the first switching element Tr. The first electrodes 23 are provided in a matrix shape on the sensor substrate 21 in correspondence with the respective photodiodes PD. The multiple first electrodes 23 are cathode electrodes of the photodiodes PD, and may be referred to as detection electrodes.

[0073] In plan view, the area of ​​the photodiode PD is smaller than the area of ​​the light-shielding layer 25. Moreover, the area of ​​the first electrode 23 is smaller than the area of ​​the active layer 31 forming the photodiode PD. Moreover, in plan view, the photodiode PD (active layer 31) is disposed inside the outer periphery of the light-shielding layer 25. Moreover, the first electrode 23 is disposed inside the outer periphery of the photodiode PD. The width W2 of the photodiode PD in the first direction Dx is smaller than the width W3 of the light-shielding layer 25 in the first direction Dx. The width W1 of the first electrode 23 in the first direction Dx is smaller than the width W2 of the photodiode PD in the first direction Dx. The area ratio of the light receiving portion of the photodiode PD to the light transmitting region 2a is within a range of 0.8:1.0 to 1.0:0.8. More preferably, the area ratio of the light receiving portion of the photodiode PD to the light transmitting region 2a is about 1:1. In this specification, the area of ​​the "light receiving section" of the photodiode PD refers to the area of ​​the portion of the photodiode PD (active layer 31) that is formed by overlapping with the first electrode 23. Here, when the area ratio of the transmission area 2a to the area of ​​one pixel is r, the amount of light L that reaches the light receiving section is proportional to the product (r×(1-ra)) of the amount of transmission (transmission area ratio (r)) and the amount of received light (light receiving area ratio (1-ra)). Here, a indicates an area that is neither transmission nor reception. The amount of light L that reaches the light receiving section is maximized when r=(1-a) / 2, and at this time, the light receiving area is also 1-ra=(1-a) / 2. In other words, when the transmission area and the light receiving area are 1:1, the amount of light L that reaches the light receiving section is maximized. In consideration of design constraints, errors, etc., it is preferable that the area ratio of the light receiving section and the light transmitting area 2a is within the range of 0.8:1.0 to 1.0:0.8 as described above.

[0074] With this configuration, in the detection device 1, light L2 that passes through the light-transmitting region 2a and is reflected by a detection object such as a finger Fg is irradiated onto the photodiode PD. Furthermore, the detection device 1 can suppress light L1a that overlaps with the light-shielding layer 25 from being irradiated onto the photodiode PD, out of the light from the backlight 121. As a result, even with a configuration in which the detection device 1 is provided with the backlight 121, the detection device 1 can improve detection accuracy by suppressing unnecessary light from being irradiated onto the photodiode PD.

[0075] 8 are rectangular. The light-shielding layer 25, the first electrode 23, and the photodiode PD may be polygonal, circular, or other shapes. The light-shielding layer 25, the first electrode 23, and the photodiode PD may have shapes different from each other. The areas, shapes, arrangement pitches, and the like of the light-shielding layer 25, the first electrode 23, and the photodiode PD are merely examples, and may be appropriately changed depending on the characteristics and detection accuracy required for the detection device 1.

[0076] Fig. 9 is a cross-sectional view taken along line IX-IX' in Fig. 8. As shown in Fig. 9, the detection device 1 further includes a second electrode 24 covering the photodiode PD, an insulating film 95, a sealing film 96, and insulating films 97 and 98. Note that in Fig. 9, the light guiding section 7 and the cover member 125 on the array substrate 2 are omitted.

[0077] In this specification, the direction perpendicular to the surface of the sensor substrate 21 from the sensor substrate 21 to the photodiode PD is referred to as the "upper side" or simply "upper". Also, the direction from the photodiode PD to the sensor substrate 21 is referred to as the "lower side" or simply "lower".

[0078] The sensor substrate 21 is an insulating substrate, and is made of, for example, glass or a resin material. The sensor substrate 21 is not limited to a flat plate shape, and may have a curved surface. In this case, the sensor substrate 21 may be a film-like resin.

[0079] The sensor substrate 21 is provided with TFTs such as the first switching element Tr, and various wirings such as the gate line GCL, the signal line SGL, etc. The array substrate 2 on which the TFTs, various wirings, and a plurality of photodiodes PD are formed on the sensor substrate 21 is a drive circuit substrate that drives the sensor for each predetermined detection region, and is also called a backplane or active matrix substrate.

[0080] Undercoat films 91a and 91b are provided on the sensor substrate 21. The transistor light-shielding film 65 is provided on the sensor substrate 21 via the undercoat film 91a. The transistor light-shielding film 65 is provided between the semiconductor layer 61 and the sensor substrate 21. The transistor light-shielding film 65 can suppress intrusion of light from the sensor substrate 21 side into the channel region of the semiconductor layer 61.

[0081] An undercoat film 91b is provided on the sensor substrate 21, covering the transistor light-shielding film 65. The undercoat films 91a and 91b are formed of an inorganic insulating film such as a silicon nitride film or a silicon oxide film. The undercoat film 91 may be a single-layer film consisting of only the undercoat film 91b without the undercoat film 91a, or may be a laminate of three or more inorganic insulating films.

[0082] The first switching element Tr (transistor) is provided on the sensor substrate 21. The semiconductor layer 61 is provided on the undercoat film 91b. The semiconductor layer 61 is made of, for example, polysilicon. However, the semiconductor layer 61 is not limited to this and may be made of a microcrystalline oxide semiconductor, an amorphous oxide semiconductor, low-temperature polysilicon, or the like.

[0083] The gate insulating film 92 is provided on the undercoat film 91 to cover the semiconductor layer 61. The gate insulating film 92 is an inorganic insulating film such as a silicon oxide film. The gate electrode 64 is provided on the gate insulating film 92. In the example shown in Fig. 9, the first switching element Tr has a top gate structure. However, the first switching element Tr is not limited to this, and may have a bottom gate structure or a dual gate structure in which the gate electrode 64 is provided on both the upper and lower sides of the semiconductor layer 61.

[0084] The interlayer insulating film 93 is provided on the gate insulating film 92, covering the gate electrode 64. The interlayer insulating film 93 has, for example, a laminated structure of a silicon nitride film and a silicon oxide film. The source electrode 62 and the drain electrode 63 are provided on the interlayer insulating film 93. The source electrode 62 is connected to the source region of the semiconductor layer 61 through a second contact hole CH2 provided in the gate insulating film 92 and the interlayer insulating film 93. The drain electrode 63 is connected to the drain region of the semiconductor layer 61 through a third contact hole CH3 provided in the gate insulating film 92 and the interlayer insulating film 93.

[0085] The light-shielding layer 25 is provided on the interlayer insulating film 93 in the same layer as the source electrode 62. In this embodiment, the light-shielding layer 25 is formed continuously with the source electrode 62 and made of the same material.

[0086] The organic insulating film 94 is provided on the interlayer insulating film 93, covering the source electrode 62 and the drain electrode 63 of the first switching element Tr. The organic insulating film 94 is further provided to cover the light-shielding layer 25. The organic insulating film 94 is an organic planarizing film, and is superior in coverage of wiring steps and surface flatness compared to inorganic insulating materials formed by CVD or the like.

[0087] A barrier film is provided on the organic insulating film 94. The barrier film is, for example, an inorganic insulating film. The first electrode 23, the photodiode PD, and the second electrode 24 are provided on the barrier film .

[0088] More specifically, the first electrode 23 is arranged on the first main surface S1 side of the sensor substrate 21, overlaps with the light-shielding layer 25, and is provided on the barrier film 26. The first electrode 23 is a cathode electrode of the photodiode PD, and is formed of a conductive material having light transmission, such as ITO (Indium Tin Oxide). Alternatively, the detection device 1 is formed as a top-light-receiving type photosensor having the backlight 121 as described above, and the first electrode 23 can be made of a metal material, such as silver (Ag). Alternatively, the first electrode 23 may be made of a metal material, such as aluminum (Al), or an alloy material containing at least one of these metal materials. As described above, the multiple first electrodes 23 are arranged separately for each partial detection area PAA (photodiode PD).

[0089] The photodiode PD is provided to cover the first electrode 23. More specifically, the photodiode PD has an active layer 31, an electron transport layer 32 (first carrier transport layer) provided between the active layer 31 and the first electrode 23, and a hole transport layer 33 (second carrier transport layer) provided between the active layer 31 and the second electrode 24. In the photodiode PD, the first electrode 23, the electron transport layer 32, the active layer 31, the hole transport layer 33, and the second electrode 24 are laminated in this order in a direction perpendicular to the sensor substrate 21 in a region overlapping with the light-shielding layer 25.

[0090] The characteristics (for example, voltage-current characteristics and resistance value) of the active layer 31 change according to the light irradiated thereto. An organic material is used as the material of the active layer 31. Specifically, the active layer 31 has a bulk heterostructure in which a p-type organic semiconductor and an n-type fullerene derivative (PCBM) which is an n-type organic semiconductor are mixed. For example, low molecular weight organic materials such as C60 (fullerene), PCBM (phenyl C61-butyric acid methyl ester), CuPc (copper phthalocyanine), F16CuPc (fluorinated copper phthalocyanine), rubrene (5,6,11,12-tetraphenyltetracene), and PDI (perylene derivative) can be used as the active layer 31.

[0091] The active layer 31 can be formed by a deposition type (dry process) using these low molecular weight organic materials. In this case, the active layer 31 may be, for example, a laminated film of CuPc and F16CuPc, or a laminated film of rubrene and C60. The active layer 31 can also be formed by a coating type (wet process). In this case, the active layer 31 is made of a material that combines the above-mentioned low molecular weight organic material and a polymer organic material. As the polymer organic material, for example, P3HT (poly(3-hexylthiophene)), F8BT (F8-alt-benzothiadiazole), etc. can be used. The active layer 31 can be a film in a state where P3HT and PCBM are mixed, or a film in a state where F8BT and PDI are mixed.

[0092] The electron transport layer 32 and the hole transport layer 33 are provided to facilitate the electrons and holes generated in the active layer 31 reaching the first electrode 23 or the second electrode 24. The electron transport layer 32 is provided to cover the upper surface and side surfaces of the first electrode 23. The outer edge of the electron transport layer 32 contacts the barrier film 26 at a position outside the first electrode 23. The material used for the electron transport layer 32 is ethoxylated polyethyleneimine (PEIE).

[0093] The active layer 31 is directly on and in contact with the electron transport layer 32. The active layer 31 is provided to cover the upper surface and side surfaces of the electron transport layer 32. The outer edge of the active layer 31 is in contact with the barrier film 26 at a position outside the electron transport layer 32.

[0094] The hole transport layer 33 is directly on and in contact with the active layer 31. The hole transport layer 33 is provided to cover the upper surface and side surfaces of the active layer 31. The outer edge of the hole transport layer 33 is in contact with the barrier film 26 at a position outside the active layer 31. The hole transport layer 33 is a metal oxide layer. Tungsten oxide (WO3), molybdenum oxide, or the like is used as the metal oxide layer.

[0095] That is, the width W2a of the electron transport layer 32 in the first direction Dx is larger than the width W1 of the first electrode 23 in the first direction Dx. The width W2b of the active layer 31 in the first direction Dx is larger than the width W2a of the electron transport layer 32 in the first direction Dx. The width W2c of the hole transport layer 33 in the first direction Dx is larger than the width W2b of the active layer 31 in the first direction Dx.

[0096] Further, the side surfaces of the first electrode 23, the electron transport layer 32, and the active layer 31 are covered with the hole transport layer 33 located in the uppermost layer of the photodiode PD. More specifically, the outer edges of the first electrode 23, the electron transport layer 32, the active layer 31, and the hole transport layer 33 are flush with the upper surface of the barrier film 26. The side surface of the first electrode 23, the side surface of the electron transport layer 32, the side surface of the active layer 31, and the side surface of the hole transport layer 33 are arranged in this order along the upper surface of the barrier film 26, and the electron transport layer 32 and the hole transport layer 33 are disposed apart from each other via the active layer 31.

[0097] The second electrode 24 is provided on the multiple photodiodes PD. More specifically, the second electrode 24 is provided on the barrier film 26, covering the upper surface and side surfaces of the hole transport layer 33. The second electrode 24 is an anode electrode of the photodiode PD. Although one partial detection area PAA (photodiode PD) is shown in FIGS. 8 and 9, the second electrode 24 is provided continuously across multiple partial detection areas PAA (photodiodes PD). The second electrode 24 is formed of a conductive material having light transmission, such as ITO or IZO.

[0098] With this configuration, the electron transport layer 32, the active layer 31, and the hole transport layer 33 forming the photodiode PD are individually provided in an island shape in the region surrounded by the gate line GCL and the signal line SGL. Each layer of the photodiode PD is provided covering the upper surface and side surface of the respective lower layers, and the second electrode 24 is provided in contact with the hole transport layer 33 and in a non-contact state with the first electrode 23, the electron transport layer 32, and the active layer 31, which are lower than the hole transport layer 33. Therefore, in this embodiment, even if the photodiode PD is individually formed for each partial detection area PAA, it is possible to suppress a short circuit between the anode and the cathode of the photodiode PD. More specifically, compared to a configuration in which the electron transport layer 32, the active layer 31, and the hole transport layer 33 forming the photodiode PD are stacked with the same width and the side surfaces of each layer are exposed, it is possible to suppress electrical connection between the side surfaces of each layer via the second electrode 24 covering the photodiode PD.

[0099] The insulating film 95 is provided to cover the second electrode 24. The insulating film 95 is an inorganic insulating film, and is provided to cover the entire second electrode 24 and continuously straddle a plurality of partial detection areas PAA (photodiodes PD).

[0100] The sealing film 96 is provided on the second electrode 24. The sealing film 96 is made of an inorganic film such as a silicon nitride film or an aluminum oxide film, or a resin film such as an acrylic film. The sealing film 96 is not limited to a single layer, and may be a laminated film of two or more layers combining the inorganic film and the resin film. The photodiode PD is well sealed by the sealing film 96, and the intrusion of moisture from the upper surface side can be suppressed.

[0101] The insulating films 97 and 98 are provided to cover the sealing film 96. The insulating film 97 is, for example, an inorganic insulating film, and the insulating film 98 is, for example, an organic insulating film (resin layer).

[0102] The materials and manufacturing methods of the electron transport layer 32, the active layer 31, and the hole transport layer 33 are merely examples, and other materials and manufacturing methods may be used. The widths W1, W2, W2a, W2b, and W2c and thicknesses of the layers of the photodiode PD shown in Fig. 9 are merely shown diagrammatically, and may be changed as appropriate. The insulating films 97 and 98 may be provided as necessary, and may be omitted.

[0103] As described above, the detection device 1 of this embodiment has a sensor substrate 21 (substrate), a plurality of first electrodes 23 arranged on the first main surface S1 of the sensor substrate 21, a plurality of photodiodes PD provided corresponding to the plurality of first electrodes 23 and including an electron transport layer 32 (first carrier transport layer), an active layer 31 and a hole transport layer 33 (second carrier transport layer), a second electrode 24 provided across the plurality of photodiodes PD, a backlight 121 provided on the second main surface S2 side opposite the first main surface S1 of the sensor substrate 21, a plurality of light-shielding layers 25 provided between the backlight 121 and the plurality of photodiodes PD, and a light-transmitting region 2a formed between adjacent plurality of light-shielding layers 25.

[0104] As a result, in the light-transmitting region 2a, the light L1 of the light irradiated from the backlight 121 is transmitted through the light-transmitting region 2a of the array substrate 2 and irradiated toward the object to be detected such as a finger Fg. The light L2 reflected by the object to be detected such as a finger Fg is received by the photodiode PD through the light guide 7. On the other hand, in the light-shielding region, the light L1a of the light irradiated from the backlight 121 is shielded by the light-shielding layer 25 and is not irradiated toward the photodiode PD and the object to be detected such as a finger Fg above the light-shielding layer 25. The photodiode PD of the detection device 1 is mainly irradiated with the light L2 reflected by the object to be detected such as a finger Fg, and it is possible to suppress the irradiation of the photodiode PD with light other than the light L2 from the object to be detected such as a finger Fg (for example, the light L1a directly irradiated from the backlight 121). Therefore, the detection device 1 having the backlight 121 can improve the detection accuracy.

[0105] Second embodiment Fig. 10 is an enlarged schematic diagram of a sensor unit of a detection device according to a second embodiment. Fig. 11 is an enlarged schematic diagram showing a part of a sensor unit of a detection device according to a second embodiment. Fig. 10 shows a plan view of a plurality of adjacent partial detection areas PAA (photodiodes PD), and Fig. 11 shows an enlarged view of one partial detection area PAA (photodiode PD). In Fig. 11, the photodiode PD is indicated by a two-dot chain line to make the drawing easier to see. In the following description, the same components as those described in the above-mentioned embodiment are assigned the same reference numerals, and duplicated description will be omitted.

[0106] As shown in Figures 10 and 11, in the detection device 1A of the second embodiment, unlike the first embodiment described above, the electron transport layer 32, active layer 31 and hole transport layer 33 that form the photodiode PD are configured to be formed continuously between adjacent partial detection areas PAA.

[0107] The first electrodes 23 are formed individually for each region surrounded by the signal lines SGL and the gate lines GCL. The photodiodes PD are formed for each of the first electrodes 23. The photodiodes PD adjacent to each other in the second direction Dy are connected via a second connection portion CN2 provided so as to overlap the gate line GCL. The photodiodes PD adjacent to each other in the first direction Dx and the second connection portion CN2 are connected via a first connection portion CN1 overlapping the gate line GCL and extending in the first direction Dx.

[0108] More specifically, the electron transport layer 32, the active layer 31, and the hole transport layer 33 (the active layer 31 is shown in FIGS. 10 and 11) which form the photodiode PD are formed to overlap with each of the multiple first electrodes 23. The first connection portion CN1 and the second connection portion CN2 have the same laminated structure as the electron transport layer 32, the active layer 31, and the hole transport layer 33 which form the photodiode PD.

[0109] The electron transport layer 32, active layer 31, and hole transport layer 33 forming the photodiode PD and the second connection portion CN2 have the same width and are continuously formed overlapping the first electrodes 23 and the gate lines GCL arranged in the second direction Dy. The electron transport layer 32, active layer 31, and hole transport layer 33 forming the first connection portion CN1 and the second connection portion CN2 extend in the first direction Dx overlapping the gate lines GCL. That is, the electron transport layer 32, active layer 31, and hole transport layer 33 forming the photodiode PD, the first connection portion CN1, and the second connection portion CN2 are formed in a lattice pattern.

[0110] 11, one end side and the other end side of the light-shielding layer 25 in the second direction Dy are arranged to overlap a part of the gate line GCL. The light-shielding layers 25 adjacent to each other in the second direction Dy are arranged to be spaced apart from each other on the gate line GCL with a gap therebetween. The width W25 of the light-shielding layer 25 in the second direction Dy is slightly larger than the distance WGCL between the two gate lines GCL adjacent to each other in the second direction Dy.

[0111] With this configuration, the light shielding layer 25 can block the light L1a from the backlight 121. In addition, in this embodiment, the gate line GCL functions as a light shielding layer for the first connection portion CN1 and the second connection portion CN2 that connect the photodiode PD. The width of the first connection portion CN1 is smaller than the width of the gate line GCL. In addition, the second connection portion CN2 overlaps one end side and the other end side of the gate line GCL and the light shielding layer 25 in the second direction Dy. This can suppress the light L1a from the photodiode PD from being irradiated to the first connection portion CN1 and the second connection portion CN2, and suppress the generation of unnecessary photocarriers in the first connection portion CN1 and the second connection portion CN2. In addition, in this embodiment, the light transmitting region 2a is formed in a region surrounded by the light shielding layer 25 and the signal line SGL adjacent to each other in the first direction Dx, and the two gate lines GCL adjacent to each other in the second direction Dy.

[0112] FIG. 12 is a cross-sectional view taken along the line XII-XII' in FIG. 11. As shown in FIG. 12, the electron transport layer 32, the active layer 31, and the hole transport layer 33 are continuously formed across a plurality of first electrodes 23 arranged in the second direction Dy. The electron transport layer 32 is provided to cover the upper surface of the first electrode 23 and the side surface in the second direction Dy. The electron transport layer 32 is provided to cover the barrier film 26 between the adjacent first electrodes 23. More specifically, in the region overlapping with the photodiode PD, the first electrode 23, the electron transport layer 32, the active layer 31, the hole transport layer 33, and the second electrode 24 are stacked in this order on the barrier film 26. In the region overlapping with the second connection portion CN2, the electron transport layer 32, the active layer 31, the hole transport layer 33, and the second electrode 24 are stacked in this order on the barrier film 26. The second electrode 24 is provided to cover the photodiode PD and the second connection portion CN2.

[0113] FIG. 13 is a cross-sectional view taken along the line XIII-XIII′ of FIG. 11. As shown in FIG. 13, the electron transport layer 32 is provided to cover the upper surface of the first electrode 23 and the side surface in the first direction Dx. The outer edge of the electron transport layer 32 contacts the barrier film 26 at a position outside the first electrode 23. In the detection device 1A of the second embodiment, the electron transport layer 32 (first carrier transport layer), the active layer 31, the hole transport layer 33 (second carrier transport layer), and the second electrode 24 are stacked with the same width W2. In other words, the side surfaces of the electron transport layer 32, the active layer 31, the hole transport layer 33, and the second electrode 24 are provided overlapping at the same position. The insulating film 95 covers the upper surface of the second electrode 24 and the side surfaces of the electron transport layer 32, the active layer 31, the hole transport layer 33, and the second electrode 24.

[0114] With this configuration, also in the second embodiment, it is possible to prevent a short circuit between the anode and cathode of the photodiode PD.

[0115] In this embodiment, the second electrode 24 is used as a mask to collectively pattern the electron transport layer 32, the active layer 31, and the hole transport layer 33, thereby forming the multiple photodiodes PD, the first connection portion CN1, and the second connection portion CN2 in the same process. That is, in the second embodiment, the manufacturing process of the multiple photodiodes PD can be simplified compared to the first embodiment.

[0116] Third embodiment Fig. 14 is an enlarged schematic diagram of a sensor unit of a detection device according to a third embodiment. In Fig. 14, the electron transport layer 32, the active layer 31, and the hole transport layer 33 forming the multiple photodiodes PD are omitted. In this embodiment, unlike the first and second embodiments described above, the electron transport layer 32, the active layer 31, and the hole transport layer 33 are continuously formed across the multiple partial detection areas PAA (photodiodes PD). In other words, the electron transport layer 32, the active layer 31, and the hole transport layer 33 are provided so as to overlap the light-shielding area overlapping the light-shielding layer 25, the signal line SGL, the gate line GCL, etc., and the light-transmitting area 2a not overlapping the light-shielding layer 25, the signal line SGL, the gate line GCL, etc.

[0117] As shown in FIG. 14, the detection device 1B according to the third embodiment further includes a shield wiring 28. The shield wiring 28 is provided to surround the first electrode 23, and a fixed potential is supplied to the shield wiring 28. The fixed potential is, for example, the same voltage signal as the reference signal COM (see FIG. 5). The shield wiring 28 and the first electrode 23 are provided to overlap the light-shielding layer 25. In a plan view, the shield wiring 28 and the first electrode 23 are disposed inside the outer periphery of the light-shielding layer 25.

[0118] More specifically, the shield wiring 28 has linear portions 28a, 28b extending in the second direction Dy and linear portions 28c, 28d extending in the first direction Dx. The linear portions 28a, 28b, 28c, and 28d are connected to form the shield wiring 28 in a ring shape. The first electrode 23 is disposed between the linear portions 28a and 28b in the first direction Dx, and the first electrode 23 is disposed between the linear portions 28c and 28d in the second direction Dy. Note that the shield wiring 28 is not limited to a configuration in which the linear portions 28a, 28b, 28c, and 28d are continuously connected, and a slit may be formed in a part of the shield wiring 28, or the shield wiring 28 may be divided into a plurality of portions.

[0119] The shield wiring 28 is provided for each of the multiple first electrodes 23. That is, the shield wiring 28 and the first electrodes 23 are formed individually for each region surrounded by the multiple signal lines SGL and the multiple gate lines GCL, and are provided in a matrix on the sensor substrate 21. The multiple shield wirings 28 arranged in the first direction Dx are connected by first connection wiring 28s1. The first connection wiring 28s1 extends in the first direction Dx and is provided in a straight line with the linear portion 28d of the shield wiring 28.

[0120] Further, the multiple shield wirings 28 arranged in the second direction Dy are connected by a second connection wiring 28s2. The second connection wiring 28s2 extends in the second direction Dy and is provided in a straight line with the linear portion 28a of the shield wiring 28. The multiple first connection wirings 28s1 and the multiple second connection wirings 28s2 are provided in a lattice pattern. At least one of the first connection wiring 28s1 and the multiple second connection wirings 28s2 is electrically connected to the power supply circuit 103 (see FIG. 2). As a result, at least one of the first connection wiring 28s1 and the multiple second connection wirings 28s2 supplies a reference signal COM to each of the shield wirings 28.

[0121] 15 is a cross-sectional view taken along the line XV-XV' in FIG. 14. As shown in FIG. 15, the first electrodes 23 and the shield wirings 28 are provided in the same layer on the barrier film 26. The electron transport layer 32, the active layer 31, and the hole transport layer 33 forming the photodiode PD are continuously formed over the first electrodes 23 and the shield wirings 28. The electron transport layer 32 is provided to cover the upper and side surfaces of the first electrodes 23 and the shield wirings 28. Furthermore, the electron transport layer 32 is also provided in a region between the adjacent photodiodes PD that does not overlap with the first electrodes 23 and the shield wirings 28. That is, the electron transport layer 32, the active layer 31, and the hole transport layer 33 forming the photodiode PD are provided to cover the entire detection region AA of the array substrate 2 and to extend over the light-shielding region and the light-transmitting region 2a.

[0122] In the light-transmitting region 2a, light L1 of the light irradiated from the backlight 121 is transmitted through the electron transport layer 32, the active layer 31, and the hole transport layer 33 provided in the light-transmitting region 2a of the array substrate 2, and is irradiated toward the detection object such as a finger Fg. At this time, photocarriers (holes or electrons) generated in the active layer 31 of the light-transmitting region 2a flow to the shield wiring 28. As a result, the shield wiring 28 can suppress the flow of photocarriers generated in the light-transmitting region 2a to the first electrode 23. Therefore, by providing the shield wiring 28, the detection device 1B can suppress the generation of noise in the photodiode PD caused by light other than the light L2, by allowing the photocarriers generated by the light L2 from the detection object such as the finger Fg to flow to the first electrode 23.

[0123] The first electrode 23 and the shield wiring 28 are disposed at a distance SP (see FIG. 14). Here, the resistance R between the first electrode 23 and the shield wiring 28 is expressed by the following formula (1), where Rs is the sheet resistance value of the electron transport layer 32, and W is the perimeter of the first electrode 23. For example, when the first electrode 23 has a rectangular shape, the perimeter of the first electrode 23 is the total length of the four sides of the first electrode 23.

[0124] R = Rs × SP / W (1)

[0125] If the distance SP is formed to have a length that satisfies the following formula (2), it is possible to suppress the leakage current between the first electrode 23 and the shield wiring 28. Here, T is one frame period of detection (the period during which detection is performed over the entire detection area AA), and r is the output voltage (V out ) (see FIG. 5) is the allowable decrease in capacitance. Also, C is the capacitance formed between the first electrode 23 and the shield wiring .

[0126] RC / T×(1-exp(-T / RC))<1-r ··· (2)

[0127] Moreover, the area ratio of the light receiving portion of the photodiode PD to the light transmitting region 2a is preferably about 1:1. As described above, the area of ​​the light receiving portion of the photodiode PD is the area of ​​the portion overlapping with the first electrode 23, which is smaller than the area of ​​the light shielding region (light shielding layer 25) and smaller than the area surrounded by the shield wiring 28. This increases the efficiency of use of the light L1 irradiated from the backlight 121, and can improve the detection efficiency.

[0128] (Fourth embodiment) Fig. 16 is an enlarged schematic configuration diagram of a sensor unit of a detection device according to the fourth embodiment. As shown in Fig. 16, a detection device 1C according to the fourth embodiment further includes a counter electrode 29. The counter electrode 29 is provided so as to overlap with the light-shielding layer 25. The counter electrode 29 is also provided so as to overlap with the photodiode PD, the first electrode 23, and the shield wiring 28. The counter electrode 29 has an area larger than that of the light-shielding layer 25 in a plan view, except for a portion where the first switching element Tr is provided.

[0129] The counter electrode 29 is provided in the same layer as the gate line GCL. However, without being limited thereto, the counter electrode 29 may be provided in any layer as long as it is a layer below the light-shielding layer 25 (a layer between the light-shielding layer 25 and the sensor substrate 21).

[0130] The counter electrodes 29 are provided corresponding to the multiple photodiodes PD, respectively. The multiple counter electrodes 29 arranged in the first direction Dx are connected by a connection wiring 29s extending in the first direction Dx. The connection wiring 29s intersects with the second connection wiring 28s2 (the linear portion 28a of the shield wiring 28). The shield wiring 28 is electrically connected to the counter electrode 29 through a fourth contact hole CH4 provided in the tab portion 28t. As a result, the same potential (reference signal COM) as that of the shield wiring 28 is supplied to the counter electrode 29.

[0131] In other words, the connection wiring 29s is used as a wiring for supplying the reference signal COM to the shield wiring 28. This makes it possible to reduce the wiring resistance for supplying the reference signal COM to the shield wiring 28.

[0132] A capacitance is formed between the opposing electrode 29 and the light-shielding layer 25, which are disposed opposite each other. As described above, the light-shielding layer 25 is electrically connected to the first electrode 23 and the photodiode PD. That is, the capacitance formed between the opposing electrode 29 and the light-shielding layer 25, which are disposed opposite each other, is added to the sensor capacitance (capacitor Ca (see FIG. 5)) formed in the photodiode PD. With this configuration, the capacitance of the capacitor Ca can be increased in this embodiment.

[0133] In the first to fourth embodiments described above, the first electrode 23 is the cathode electrode of the photodiode PD, and the second electrode 24 is the anode electrode of the photodiode PD. However, without being limited thereto, the first electrode 23 may be the anode electrode of the photodiode PD, and the second electrode 24 may be the cathode electrode of the photodiode PD. In this case, the photodiode PD is stacked in the order of a hole transport layer 33 (first carrier transport layer), an active layer 31, and an electron transport layer 32 (second carrier transport layer) in a direction perpendicular to the sensor substrate 21.

[0134] Although the preferred embodiment of the present invention has been described above, the present invention is not limited to such an embodiment. The contents disclosed in the embodiment are merely examples, and various modifications are possible within the scope of the present invention. Appropriate modifications made within the scope of the present invention naturally belong to the technical scope of the present invention. At least one of various omissions, substitutions, and modifications of components can be made within the scope of the gist of each of the above-mentioned embodiments and each modified example. [Explanation of symbols]

[0135] 1, 1A, 1B, 1C Detector 2 Array Board 7 Light guide section 10 Sensor section 11 Detection control section 15 Gate line driving circuit 16 Signal line selection circuit 21 Sensor substrate 23 1st electrode 24 2nd electrode 25 Light blocking layer 28 Shielded wiring 28a, 28b, 28c, 28d linear part 28s1 1st connection wiring 28s2 2nd connection wiring 29 Counter electrode 31 Active layer 32 Electron transport layer 33 Hole transport layer 40 Detection unit 48 Detection Circuit 94 Organic insulating film 95, 97, 98 Insulating film 96 Sealing film PD Photodiode AA detection area GA Peripheral Areas CN1 1st connection part CN2 Second connection part S1 First main surface S2 2nd main surface

Claims

1. A substrate; A plurality of first electrodes arranged on a first main surface of the substrate; a plurality of photodiodes provided corresponding to the plurality of first electrodes, each photodiode including a first carrier transport layer, an active layer, and a second carrier transport layer; a second electrode provided across the plurality of photodiodes; A backlight provided on a second main surface side of the substrate opposite to the first main surface; A plurality of light-shielding layers are provided between the backlight and the plurality of photodiodes, and a light-transmitting region is formed between adjacent ones of the light-shielding layers; a plurality of gate lines extending in a first direction and a plurality of signal lines extending in a second direction intersecting the first direction; a plurality of first connection parts and a plurality of second connection parts formed in the same layer as the first carrier transport layer, the active layer, and the second carrier transport layer; the first electrode is formed individually for each region surrounded by the plurality of signal lines and the plurality of gate lines; the photodiodes adjacent to each other in the first direction are connected by the first connection portion; the photodiodes adjacent to each other in the second direction are connected by the second connection portion; the first connection parts are provided so as to overlap the gate lines, The interval between the first connection parts adjacent to each other in the second direction is greater than the width of the first electrode in the second direction. Detection device.

2. In a region overlapping with the light-shielding layer, the first electrode, the first carrier transport layer, the active layer, the second carrier transport layer, and the second electrode are laminated in this order in a direction perpendicular to the first main surface of the substrate. The detection device according to claim 1 .

3. the first carrier transport layer is provided to cover a side surface of the first electrode in the first direction, the first carrier transport layer, the active layer, the second carrier transport layer, and the second electrode are stacked to have the same width in the first direction; an insulating film covering side surfaces of the first carrier transport layer, the active layer, the second carrier transport layer, and the second electrode; 3. The detection device according to claim 1 or 2.

4. a plurality of switching elements provided corresponding to the plurality of photodiodes, The signal lines and the gate lines are connected to the switching elements. The detection device according to any one of claims 1 to 3.

5. A substrate; A plurality of first electrodes arranged on a first main surface of the substrate; a plurality of photodiodes provided corresponding to the plurality of first electrodes, each photodiode including a first carrier transport layer, an active layer, and a second carrier transport layer; a second electrode provided across the plurality of photodiodes; A backlight provided on a second main surface side of the substrate opposite to the first main surface; A plurality of light-shielding layers are provided between the backlight and the plurality of photodiodes, and a light-transmitting region is formed between adjacent ones of the light-shielding layers; a shield wiring provided to surround the first electrode and to which a fixed potential is supplied; the first carrier transport layer, the active layer, and the second carrier transport layer are provided to cover the first electrode and the shield wiring, a counter electrode provided between the light-shielding layer and the substrate and overlapping the light-shielding layer; The counter electrode is electrically connected to the shield wiring. Detection device.

6. the shield wiring is provided for each of the first electrodes, a first connection wiring extending in a first direction and connecting the plurality of shield wirings adjacent to each other in the first direction; a second connection wiring extending in a second direction intersecting the first direction and connecting the plurality of shield wirings adjacent to each other in the second direction, The first connection wirings and the second connection wirings are arranged in a lattice pattern.

6. The detection device according to claim 5.

7. the shield wiring is provided so as to overlap the light-shielding layer, The shield wiring is disposed inside the outer periphery of the light-shielding layer in a plan view perpendicular to the substrate.

7. The detection device according to claim 5 or 6.

8. a plurality of switching elements provided corresponding to the plurality of photodiodes, respectively; A plurality of gate lines and a plurality of signal lines connected to the plurality of switching elements, the first electrode and the shield wiring are formed individually for each region surrounded by a plurality of signal lines and a plurality of gate lines, The first carrier transport layer, the active layer, and the second carrier transport layer are formed continuously across the first electrodes and the shield wirings. A detection device according to any one of claims 5 to 7.

9. At least one of the first electrode and the second electrode is made of a light-transmitting conductive material. A detection device according to any one of claims 1 to 8.

10. The first electrode is formed of a metal material.

10. A detection device according to any one of claims 1 to 9.

11. The area ratio of the light receiving portion of the photodiode to the light transmitting region is within a range of 0.8:1.0 to 1.0:0.

8. Detecting device according to any one of claims 1 to 10.

12. one of the first electrode and the second electrode is a cathode electrode; One of the first electrode and the second electrode is an anode electrode. Detecting device according to any one of claims 1 to 11.

13. a light guiding portion provided so as to overlap a plurality of the photodiodes; The light guide section includes a light guide path at least partially overlapping the photodiode, and a light shielding section having a higher light absorption rate than the light guide path. Detecting device according to any one of claims 1 to 12.

14. The backlight is a flexible OLED light source Detection device according to any one of claims 1 to 13.

Images