Plasma processing apparatus and plasma processing method
JP7638168B2Active Publication Date: 2025-03-03TOKYO ELECTRON LTD
Patent Information
- Application Number
- JP2021102226
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2021-06-21
- Publication Date
- 2025-03-03
- Estimated Expiration
- 2041-06-21
Smart Images
Figure 0007638168000001 
Figure 0007638168000002 
Figure 0007638168000003
Abstract
To provide a technique for suppressing reflection of high-frequency power used for plasma generation.SOLUTION: A plasma processing apparatus includes a chamber, a substrate support, a high frequency power supply, and a bias power supply. The substrate support is provided within the chamber. The high frequency power supply provides high frequency power to generate a plasma within the chamber. The bias power supply is configured to supply electrical bias energy to an electrode of the substrate support. The electrical bias energy has a period with a time length that is the reciprocal of the bias frequency. The high frequency power supply adjusts the output power level of the high frequency power in the plurality of phase periods within the period such that the evaluation value of the power level of the reflected wave of the high-frequency power in the plurality of phase periods within the cycle is equal to or less than an allowable value.SELECTED DRAWING: Figure 1
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Citation Information
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