Imaging device and electronic device

Abstract

Provided is an imaging device capable of achieving superior imaging performance. The imaging device comprises: a collection optics for collecting incident light in an effective pixel region extending along a first plane; a photoelectric converter capable of generating, through photoelectric conversion, charges corresponding to the amount of incident light that has passed through the collection optics; a charge holder capable of holding the charges transferred from the photoelectric converter; and a first light-blocking film provided between the photoelectric converter and the charge holder in a thickness direction orthogonal to the first plane, and blocking the incident light. The collection optics are configured to collect the incident light at a position in the effective pixel region overlapping the first light-blocking film in the thickness direction.

Description

[Technical Field]

[0001] The present disclosure relates to an imaging device that captures an image by performing photoelectric conversion, and an electronic device that includes the imaging device. [Background technology]

[0002] The present applicant has previously proposed an imaging device including a silicon substrate having a layered structure in which a photodiode and a memory are layered in the light incident direction (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2016 / 136486 Summary of the Invention

[0004] However, further improvement in imaging performance is required for such imaging devices, and therefore it is desirable to provide an imaging device that can achieve further improvement in imaging performance, and an electronic device equipped with such an imaging device.

[0005] An imaging device according to one embodiment of the present disclosure includes a focusing optical system that focuses incident light onto an effective pixel area extending along a first surface, a photoelectric conversion unit capable of generating, through photoelectric conversion, electric charges corresponding to the amount of incident light that has passed through the focusing optical system, a charge storage unit capable of storing electric charges transferred from the photoelectric conversion unit, and a first light-shielding film that is disposed between the photoelectric conversion unit and the charge storage unit in a thickness direction perpendicular to the first surface and blocks the incident light. Here, the focusing optical system focuses the incident light onto a position of the effective pixel area that overlaps with the first light-shielding film in the thickness direction. The effective pixel area refers to an area that can receive incident light. Moreover, an electronic device according to an embodiment of the present disclosure includes the imaging device. [Brief explanation of the drawings]

[0006] [Figure 1] 1 is a block diagram illustrating an example configuration of an imaging device according to a first embodiment of the present disclosure. [Figure 2] 2 is a circuit diagram illustrating a circuit configuration of one sensor pixel in the imaging device shown in FIG. 1. [Figure 3A] 2 is a first cross-sectional view schematically illustrating a cross section along the stacking direction of two adjacent sensor pixels in the solid-state imaging device shown in FIG. 1. FIG. [Figure 3B] 1. FIG. 4 is a second cross-sectional view schematically illustrating a cross section along the stacking direction of two adjacent sensor pixels in the solid-state imaging device shown in FIG. [Figure 4A] 2 is a first plan view schematically illustrating a planar configuration of some sensor pixels in the solid-state imaging device shown in FIG. 1. FIG. [Figure 4B] 2 is a second plan view schematically illustrating the planar configuration of some sensor pixels in the solid-state imaging device shown in FIG. 1. FIG. [Figure 4C] 1. FIG. 4 is a third plan view schematically illustrating the planar configuration of some sensor pixels in the solid-state imaging device shown in FIG. [Figure 4D] 1. FIG. 4 is a fourth plan view schematically illustrating the planar configuration of some sensor pixels in the solid-state imaging device shown in FIG. [Figure 4E] 1. FIG. 5 is a fifth plan view schematically illustrating the planar configuration of some sensor pixels in the solid-state imaging device shown in FIG. [Figure 4F] 1. FIG. 6 is a sixth plan view schematically illustrating the planar configuration of some sensor pixels in the solid-state imaging device shown in FIG. [Figure 4G] 1. FIG. 14 is a seventh plan view schematically illustrating the planar configuration of some sensor pixels in the solid-state imaging device shown in FIG. [Figure 4H] 1. FIG. 8 is an eighth plan view schematically illustrating the planar configuration of some sensor pixels in the solid-state imaging device shown in FIG. [Figure 5A] 10 is a cross-sectional view schematically illustrating a path of light incident on a sensor pixel in a solid-state imaging device as a reference example. FIG. [Figure 5B]3B is a cross-sectional view schematically illustrating the path of light incident on the sensor pixel illustrated in FIG. 3A. FIG. [Figure 6A] FIG. 4 is a plan view schematically illustrating a first modified example of the lens arrangement pattern in the solid-state imaging device according to the first embodiment. [Figure 6B] FIG. 10 is a plan view schematically illustrating a second modified example of the lens arrangement pattern in the solid-state imaging device according to the first embodiment. [Figure 6C] FIG. 10 is a plan view schematically illustrating a third modified example of the lens arrangement pattern in the solid-state imaging device according to the first embodiment. [Figure 6D] FIG. 10 is a plan view schematically illustrating a fourth modified example of the lens arrangement pattern in the solid-state imaging device according to the first embodiment. [Figure 6E] FIG. 10 is a plan view schematically illustrating a fifth modified example of the lens arrangement pattern in the solid-state imaging device according to the first embodiment. [Figure 6F] FIG. 10 is a plan view schematically illustrating a sixth modified example of the lens arrangement pattern in the solid-state imaging device according to the first embodiment. [Figure 6G] FIG. 13 is a plan view schematically illustrating a seventh modified example of the lens arrangement pattern in the solid-state imaging device according to the first embodiment. [Figure 6H] FIG. 13 is a plan view schematically illustrating an eighth modified example of the lens arrangement pattern in the solid-state imaging device according to the first embodiment. [Figure 6I] FIG. 13 is a plan view schematically illustrating a ninth modified example of the lens arrangement pattern in the solid-state imaging device according to the first embodiment. [Figure 7A] FIG. 10 is a first cross-sectional view schematically illustrating a cross section along a stacking direction of two adjacent sensor pixels in a pixel array section according to a second embodiment of the present disclosure. [Figure 7B] FIG. 10 is a second cross-sectional view schematically illustrating a cross section along the stacking direction of two adjacent sensor pixels in a pixel array section according to a second embodiment of the present disclosure. [Figure 8A] 7B is a first plan view schematically illustrating a planar configuration of some sensor pixels in the solid-state imaging device illustrated in FIG. 7A. FIG. [Figure 8B]7C is a second plan view schematically illustrating the planar configuration of some sensor pixels in the solid-state imaging device illustrated in FIG. 7B. FIG. [Figure 9A] FIG. 11 is a first cross-sectional view schematically illustrating a cross section along a stacking direction of two adjacent sensor pixels in a pixel array section according to a third embodiment of the present disclosure. [Figure 9B] FIG. 11 is a second cross-sectional view schematically illustrating a cross section along the stacking direction of two adjacent sensor pixels in a pixel array section according to a third embodiment of the present disclosure. [Figure 10A] FIG. 13 is a first cross-sectional view schematically illustrating a cross section along a stacking direction of two adjacent sensor pixels in a pixel array section according to a first modified example of the third embodiment of the present disclosure. [Figure 10B] FIG. 13 is a second cross-sectional view schematically illustrating a cross section along the stacking direction of two adjacent sensor pixels in a pixel array section according to a first modified example of the third embodiment of the present disclosure. [Figure 11A] FIG. 13 is a first cross-sectional view schematically illustrating a cross section along the stacking direction of two adjacent sensor pixels in a pixel array section according to a second modified example of the third embodiment of the present disclosure. [Figure 11B] FIG. 20 is a second cross-sectional view schematically illustrating a cross section along the stacking direction of two adjacent sensor pixels in a pixel array section according to a second modified example of the third embodiment of the present disclosure. [Figure 12A] FIG. 13 is a first cross-sectional view schematically illustrating a cross section along the stacking direction of two adjacent sensor pixels in a pixel array section according to a third modified example of the third embodiment of the present disclosure. [Figure 12B] FIG. 13 is a second cross-sectional view schematically illustrating a cross section along the stacking direction of two adjacent sensor pixels in a pixel array section according to a third modified example of the third embodiment of the present disclosure. [Figure 13A] FIG. 11 is a first cross-sectional view schematically illustrating a cross section along a stacking direction of two adjacent sensor pixels in a pixel array section according to a fourth embodiment of the present disclosure. [Figure 13B] FIG. 13 is a second cross-sectional view schematically illustrating a cross section along the stacking direction of two adjacent sensor pixels in a pixel array section according to a fourth embodiment of the present disclosure. [Figure 14A] 13B is a first plan view schematically illustrating a planar configuration of some sensor pixels in the solid-state imaging device illustrated in FIG. 13A. FIG. [Figure 14B] 13C is a second plan view schematically illustrating the planar configuration of some sensor pixels in the solid-state imaging device illustrated in FIG. 13B. FIG. [Figure 15A] FIG. 13 is a first cross-sectional view schematically illustrating a cross section along a stacking direction of two adjacent sensor pixels in a pixel array section according to a first modified example of the fourth embodiment of the present disclosure. [Figure 15B] FIG. 20 is a second cross-sectional view schematically illustrating a cross section along the stacking direction of two adjacent sensor pixels in a pixel array section according to a first modified example of the fourth embodiment of the present disclosure. [Figure 16A] 15B is a first plan view schematically illustrating a planar configuration of some sensor pixels in the solid-state imaging device illustrated in FIG. 15A. FIG. [Figure 16B] 15C is a second plan view schematically illustrating the planar configuration of some sensor pixels in the solid-state imaging device illustrated in FIG. 15B. FIG. [Figure 17A] FIG. 13 is a first cross-sectional view schematically illustrating a cross section along the stacking direction of two adjacent sensor pixels in a pixel array section according to a second modified example of the fourth embodiment of the present disclosure. [Figure 17B] FIG. 20 is a second cross-sectional view schematically illustrating a cross section along the stacking direction of two adjacent sensor pixels in a pixel array section according to a second modified example of the fourth embodiment of the present disclosure. [Figure 18A] 17B is a first plan view schematically illustrating a planar configuration of some sensor pixels in the solid-state imaging device illustrated in FIG. 17A. FIG. [Figure 18B] 17C is a second plan view schematically illustrating the planar configuration of some sensor pixels in the solid-state imaging device illustrated in FIG. 17B. FIG. [Figure 19A] FIG. 13 is a first cross-sectional view schematically illustrating a cross section along the stacking direction of two adjacent sensor pixels in a pixel array section according to a third modified example of the fourth embodiment of the present disclosure. [Figure 19B]FIG. 20 is a second cross-sectional view schematically illustrating a cross section along the stacking direction of two adjacent sensor pixels in a pixel array section according to a third modified example of the fourth embodiment of the present disclosure. [Figure 20A] 19B is a first plan view schematically illustrating a planar configuration of some sensor pixels in the solid-state imaging device shown in FIG. 19A. FIG. [Figure 20B] 19C is a second plan view schematically illustrating the planar configuration of some sensor pixels in the solid-state imaging device illustrated in FIG. 19B. FIG. [Figure 21A] FIG. 13 is a first cross-sectional view schematically illustrating a cross section along the stacking direction of two adjacent sensor pixels in a pixel array section according to a fourth modified example of the fourth embodiment of the present disclosure. [Figure 21B] FIG. 20 is a second cross-sectional view schematically illustrating a cross section along the stacking direction of two adjacent sensor pixels in a pixel array section according to a fourth modified example of the fourth embodiment of the present disclosure. [Figure 22A] 21B is a first plan view schematically illustrating a planar configuration of some sensor pixels in the solid-state imaging device shown in FIG. 21A. FIG. [Figure 22B] 21C is a second plan view schematically illustrating the planar configuration of some sensor pixels in the solid-state imaging device illustrated in FIG. 21B. FIG. [Figure 23A] FIG. 13 is a first cross-sectional view schematically illustrating a cross section along the stacking direction of two adjacent sensor pixels in a pixel array section according to a fifth modified example of the fourth embodiment of the present disclosure. [Figure 23B] FIG. 20 is a second cross-sectional view schematically illustrating a cross section along the stacking direction of two adjacent sensor pixels in a pixel array section according to a fifth modified example of the fourth embodiment of the present disclosure. [Figure 24A] 23B is a first plan view schematically showing the planar configuration of some sensor pixels in the solid-state imaging device shown in FIG. 23A. FIG. [Figure 24B] 23C is a second plan view schematically illustrating the planar configuration of some sensor pixels in the solid-state imaging device illustrated in FIG. 23B. FIG. [Figure 25] FIG. 13 is a circuit diagram illustrating a circuit configuration of a sensor pixel in an imaging device according to a fifth embodiment of the present disclosure. [Figure 26A]26 is a first plan view schematically showing the planar configuration of some sensor pixels in the solid-state imaging device shown in FIG. 25. FIG. [Figure 26B] 2 is a second plan view schematically illustrating the planar configuration of some sensor pixels in the solid-state imaging device shown in FIG. 1. FIG. [Figure 26C] 1. FIG. 4 is a third plan view schematically illustrating the planar configuration of some sensor pixels in the solid-state imaging device shown in FIG. [Figure 26D] 1. FIG. 4 is a fourth plan view schematically illustrating the planar configuration of some sensor pixels in the solid-state imaging device shown in FIG. [Figure 26E] 1. FIG. 5 is a fifth plan view schematically illustrating the planar configuration of some sensor pixels in the solid-state imaging device shown in FIG. [Figure 26F] 1. FIG. 6 is a sixth plan view schematically illustrating the planar configuration of some sensor pixels in the solid-state imaging device shown in FIG. [Figure 26G] 1. FIG. 14 is a seventh plan view schematically illustrating the planar configuration of some sensor pixels in the solid-state imaging device shown in FIG. [Figure 27] FIG. 1 is a schematic diagram illustrating an example of the overall configuration of an electronic device. [Figure 28] 1 is a block diagram showing an example of a schematic configuration of a vehicle control system; [Figure 29] FIG. 2 is an explanatory diagram showing an example of the installation positions of an outside-vehicle information detection unit and an imaging unit. [Figure 30A] FIG. 10 is a block diagram showing an example configuration of a solid-state imaging device according to a first modification of the present disclosure. [Figure 30B] FIG. 10 is a block diagram showing an example configuration of a solid-state imaging device according to a second modification of the present disclosure. [Figure 31] FIG. 10 is a schematic diagram showing a lens arrangement pattern according to a third modified example of the present disclosure. [Figure 32A] FIG. 10 is a first plan view showing a configuration example of a pixel array section according to a fourth modified example of the present disclosure. [Figure 32B] 32B is a second plan view showing the configuration example of the pixel array section shown in FIG. 32A. FIG. [Figure 33]2 is a schematic diagram illustrating an off-angle on the surface of a Si substrate according to the present disclosure. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0007] A global shutter imaging pixel (hereinafter simply referred to as a global shutter pixel) as described in the above-mentioned Patent Document 1 has a configuration in which a photoelectric conversion unit that receives incident light and performs photoelectric conversion to generate signal charge, and a charge storage unit that stores the signal charge are stacked in the thickness direction. Therefore, unnecessary light is likely to be incident on the charge storage unit. The incidence of such unnecessary light on the charge storage unit may cause noise and lead to degradation of the image signal. For this reason, a technology has been developed to reduce PLS (Parasitic Light Sensitivity) by forming a horizontal light-shielding film made of metal or the like between the photoelectric conversion unit and the charge storage unit to suppress the incidence of light on the charge storage unit.

[0008] However, to ensure a path for transferring signal charges from the photoelectric conversion region to the charge storage region, an opening must be provided in part of the horizontal light-shielding film, which can allow light leaking through the opening to enter the charge storage region, potentially worsening PLS.

[0009] The present disclosure has been made in consideration of these problems, and aims to provide an imaging device that can achieve further improvements in imaging performance, such as by reducing PLS, and an electronic device that includes such an imaging device.

[0010] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The description will be made in the following order. 1. First embodiment 1 is an example of a solid-state imaging device in which one photoelectric conversion unit and multiple light-collecting optical systems are provided per pixel. 2. Modification of the First Embodiment 10 shows a modified example of the arrangement pattern of a plurality of light-collecting optical systems. 3. Second Embodiment 1 shows a first example of a solid-state imaging device that improves oblique incidence sensitivity characteristics. 4. Third Embodiment 10 shows a second example of a solid-state imaging device that improves oblique incidence sensitivity characteristics. 5. Modification of the Third Embodiment 6. Fourth Embodiment 1 shows a first example of a solid-state imaging device including normal pixels and image surface phase difference detection pixels. 7. Modification of the Fourth Embodiment 8. Fifth Embodiment 1 is an example of a solid-state imaging device in which two photoelectric conversion units and multiple light-collecting optical systems are provided per pixel. 9. Application examples to electronic devices 10. Application examples to mobile objects 11. Other Modifications

[0011] <1. First embodiment> [Configuration of solid-state imaging device 101] FIG. 1 is a block diagram showing an example of the functional configuration of a solid-state imaging device 101 according to a first embodiment of the present technology.

[0012] The solid-state imaging device 101 is a so-called global shutter back-illuminated image sensor such as a CMOS (Complementary Metal Oxide Semiconductor) image sensor, etc. The solid-state imaging device 101 captures an image by receiving light from a subject, photoelectrically converting the light, and generating an image signal.

[0013] The global shutter method is a method of performing global exposure in which exposure of all pixels is basically started and finished at the same time. Here, "all pixels" means all pixels that appear in an image, excluding dummy pixels and the like. Furthermore, if the time difference and image distortion are small enough to not be a problem, the global shutter method also includes a method in which global exposure is performed in units of multiple rows (for example, several tens of rows) rather than all pixels simultaneously, while the area in which global exposure is performed is moved. Furthermore, the global shutter method also includes a method in which global exposure is performed on pixels in a predetermined area, rather than on all pixels that appear in an image.

[0014] A back-illuminated image sensor is an image sensor configured such that a photoelectric conversion unit such as a photodiode that receives light from a subject and converts it into an electrical signal is located between a light-receiving surface onto which the light from the subject is incident and a wiring layer on which wiring such as transistors that drive each pixel is provided.

[0015] The solid-state imaging device 101 includes, for example, a pixel array section 111, a vertical driving section 112, a column signal processing section 113, a data storage section 119, a horizontal driving section 114, a system control section 115, and a signal processing section 118.

[0016] In the solid-state imaging device 101, a pixel array section 111 is formed on a semiconductor substrate 11 (described later). Peripheral circuits such as a vertical drive section 112, a column signal processing section 113, a data storage section 119, a horizontal drive section 114, a system control section 115, and a signal processing section 118 are formed on the same semiconductor substrate 11 as the pixel array section 111, for example.

[0017] The pixel array unit 111 has a plurality of sensor pixels PX, each including a photoelectric conversion unit PD (described later) that generates and accumulates electric charges according to the amount of light incident from a subject. As shown in FIG. 1, the sensor pixels PX are arranged in both the horizontal direction (row direction) and the vertical direction (column direction). In the pixel array unit 111, a pixel drive line 116 is wired along the row direction for each pixel row made up of sensor pixels PX arranged in a row direction, and a vertical signal line VSL is wired along the column direction for each pixel column made up of sensor pixels PX arranged in a column direction.

[0018] The vertical drive unit 112 includes a shift register, an address decoder, etc. The vertical drive unit 112 supplies signals and the like to the plurality of sensor pixels PX via the plurality of pixel drive lines 116, thereby driving all of the plurality of sensor pixels PX in the pixel array unit 111 simultaneously or driving them in units of pixel rows.

[0019] The signals output from each unit pixel in a pixel row selected and scanned by the vertical drive unit 112 are supplied through each vertical signal line VSL to a column signal processing unit 113. The column signal processing unit 113 performs predetermined signal processing on the signals output from each unit pixel in the selected row through the vertical signal line VSL for each pixel column in the pixel array unit 111, and temporarily stores the pixel signals after the signal processing.

[0020] Specifically, the column signal processing unit 113 includes, for example, a shift register and an address decoder, and performs noise removal processing, correlated double sampling processing, A / D (Analog / Digital) conversion processing of analog pixel signals, etc. to generate digital pixel signals. The column signal processing unit 113 supplies the generated pixel signals to the signal processing unit 118.

[0021] The horizontal driving unit 114 is configured with a shift register, an address decoder, etc., and is configured to sequentially select unit circuits corresponding to pixel columns in the column signal processing unit 113. By selective scanning by this horizontal driving unit 114, pixel signals that have been signal-processed for each unit circuit in the column signal processing unit 113 are output to the signal processing unit 118 in sequence.

[0022] The system control unit 115 includes a timing generator that generates various timing signals, etc. The system control unit 115 controls the driving of the vertical driving unit 112, the column signal processing unit 113, and the horizontal driving unit 114 based on the timing signals generated by the timing generator.

[0023] The signal processing unit 118 performs signal processing such as arithmetic processing on the pixel signals supplied from the column signal processing unit 113, while temporarily storing data in the data storage unit 119 as necessary, and outputs an image signal made up of each pixel signal.

[0024] The data storage unit 119 temporarily stores data necessary for signal processing in the signal processing unit 118 .

[0025] [Configuration of sensor pixel PX] (Circuit configuration example) Next, an example of the circuit configuration of the sensor pixel PX provided in the pixel array unit 111 of Fig. 1 will be described with reference to Fig. 2. Fig. 2 shows an example of the circuit configuration of two sensor pixels PX1 and PX4 among the multiple sensor pixels PX that constitute the pixel array unit 111. The multiple sensor pixels PX other than the sensor pixels PX1 and PX4 also have substantially the same configuration. Note that the sensor pixels PX1 and PX4 are arranged with the other two sensor pixels PX2 and PX3 sandwiched between them, as shown in Figs. 4A to 4F, etc., which will be described later.

[0026] In the example shown in FIG. 2, the sensor pixels PX (PX1, PX4) in the pixel array unit 111 implement a memory-holding type global shutter.

[0027] The sensor pixel PX1 includes a photoelectric conversion unit PD1, first to third transfer transistors TG1A to TG1C, a charge holding unit MEM1, a discharge transistor OFG1, a discharge unit OFD1, and a buffer BUF1. The first transfer transistor TG1A includes a transfer gate TRZ1, the second transfer transistor TG1B includes a transfer gate TRY1 and a transfer gate TRX1, and the third transfer transistor TG1C includes a transfer gate TRG1.

[0028] Similarly, the sensor pixel PX4 has a photoelectric conversion unit PD4, first to third transfer transistors TG4A to TG4C, a charge holding unit MEM4, a discharge transistor OFG4, a discharge unit OFD4, and a buffer BUF4. The first transfer transistor TG4A includes a transfer gate TRZ4, the second transfer transistor TG4B includes a transfer gate TRY4 and a transfer gate TRX4, and the third transfer transistor TG4C includes a transfer gate TRG4.

[0029] Furthermore, the sensor pixel PX1 and the sensor pixel PX4 share the power supplies VDD1 and VDD2, the charge-voltage converter FD14, the reset transistor RST14, the amplifier transistor AMP14, the selection transistor SEL14, and the like.

[0030] In this example, the first to third transfer transistors TG1A to TG1C, the first to third transfer transistors TG4A to TG4C, the reset transistor RST14, the amplifier transistor AMP14, and the select transistor SEL14 are all N-type MOS transistors. Drive signals are supplied to the gate electrodes of the first to third transfer transistors TG1A to TG1C, the first to third transfer transistors TG4A to TG4C, the reset transistor RST14, the amplifier transistor AMP14, and the select transistor SEL14 by the vertical drive unit 112 and the horizontal drive unit 114, respectively, based on drive control by the system control unit 115. These drive signals are pulse signals that are active (on) when high-level and inactive (off) when low-level. Note that, hereinafter, turning a drive signal active will also be referred to as turning the drive signal on, and turning a drive signal inactive will also be referred to as turning the drive signal off.

[0031] The photoelectric conversion units PD1 and PD4 are photoelectric conversion elements made up of, for example, PN junction photodiodes, and are configured to receive light from a subject, generate charges according to the amount of received light through photoelectric conversion, and accumulate the charges.

[0032] The charge holding units MEM1 and MEM4 are provided between the photoelectric conversion units PD1 and PD4 and the charge-voltage conversion unit FD14, respectively, and are regions that temporarily hold the charges generated and accumulated in the photoelectric conversion units PD1 and PD4 until the charges are transferred to the charge-voltage conversion unit FD14 in order to realize a global shutter function.

[0033] The first transfer transistor TG1A and the second transfer transistor TG1B are arranged in this order between the photoelectric conversion unit PD1 and the charge holding unit MEM1, and the third transfer transistor TG1C is arranged between the charge holding unit MEM1 and the charge-voltage conversion unit FD14. The first transfer transistor TG1A and the second transfer transistor TG1B are configured to transfer charges accumulated in the photoelectric conversion unit PD1 to the charge holding unit MEM1 in response to drive signals applied to their gate electrodes.

[0034] Similarly, the first transfer transistor TG4A and the second transfer transistor TG4B are arranged in this order between the photoelectric conversion unit PD4 and the charge holding unit MEM4, and the third transfer transistor TG4C is arranged between the charge holding unit MEM4 and the charge-voltage conversion unit FD14. The first transfer transistor TG4A and the second transfer transistor TG4B are configured to transfer the charges accumulated in the photoelectric conversion unit PD4 to the charge holding unit MEM4 in response to drive signals applied to their gate electrodes.

[0035] The third transfer transistor TG1C and the third transfer transistor TG4C are configured to transfer the charges temporarily held in the charge holding units MEM1 and MEM4 to the charge-voltage conversion unit FD14 in response to drive signals applied to their gate electrodes, respectively.

[0036] In the sensor pixels PX1 and PX4, for example, when the second transfer transistors TG1B and TG4B are turned off and the third transfer transistors TG1C and TG4C are turned on, the charges held in the charge holding units MEM1 and MEM4, respectively, are transferred to the charge-voltage conversion unit FD14 via the third transfer transistors TG1C and TG4C.

[0037] The buffers BUF1 and BUF4 are charge storage regions formed between the first transfer transistor TG1A and the second transfer transistor TG1B, respectively.

[0038] The reset transistor RST14 has a drain connected to the power supply VDD1 and a source connected to the charge-voltage converter FD14. The reset transistor RST14 initializes, i.e., resets, the charge-voltage converter FD14 in response to a drive signal applied to its gate electrode. For example, when the reset transistor RST14 is turned on by the drive signal, the potential of the charge-voltage converter FD14 is reset to the voltage level of the power supply VDD1. In other words, the charge-voltage converter FD14 is initialized.

[0039] The charge-voltage converter FD14 is a floating diffusion region that converts the charges transferred from the photoelectric conversion units PD1 and PD4 via the first to third transfer transistors TG1A to TG1C and TG4A to TG4C and the charge holding units MEM1 and MEM45 into electrical signals (for example, voltage signals) and outputs the electrical signals. The charge-voltage converter FD14 is connected to a reset transistor RST14 and is also connected to a vertical signal line VSL via an amplification transistor AMP14 and a selection transistor SEL14.

[0040] The amplification transistor AMP14 outputs an electrical signal corresponding to the potential of the charge-voltage converter FD14. The amplification transistor AMP14 forms a source follower circuit together with a constant current source provided in, for example, the column signal processing unit 113. The selection transistor SEL14 is turned on when the sensor pixel PX is selected, and outputs the electrical signal from the charge-voltage converter FD14 via the amplification transistor AMP14 to the column signal processing unit 113 through the vertical signal line VSL.

[0041] The sensor pixels PX1 and PX4 further include discharge units OFD1 and OFD4, respectively, in addition to the charge-voltage conversion unit FD14, as transfer destinations of the charges of the photoelectric conversion units PD1 and PD4. The discharge transistor OFG1 is disposed between the buffer BUF1 and the discharge unit OFD1, and the discharge transistor OFG4 is disposed between the buffer BUF4 and the discharge unit OFD4.

[0042] The discharge transistor OFG1 has a drain connected to the discharge unit OFD1 and a source connected to the buffer BUF1. Similarly, the discharge transistor OFG4 has a drain connected to the discharge unit OFD4 and a source connected to the buffer BUF4. The discharge transistors OFG1 and OFG4 initialize, i.e., reset, the photoelectric conversion units PD1 and PD4 in response to drive signals applied to their respective gate electrodes. Resetting the photoelectric conversion units PD1 and PD4 means depleting the photoelectric conversion units PD1 and PD4.

[0043] Furthermore, the discharge transistors OFG1 and OFG4 each form an overflow path, and discharge the charges overflowing from the photoelectric conversion units PD1 and PD4 to the discharge units OFD1 and OFD4, respectively. However, when resetting the photoelectric conversion units PD1 and PD4, it is necessary to turn on the discharge transistors OFG1 and OFG4 and the transfer gates TRZ1 and TRZ4.

[0044] (Examples of plan and cross-sectional configurations) Next, with reference to FIGS. 3A to 4H, examples of the planar configuration and cross-sectional configuration of the sensor pixel PX provided in the pixel array section 111 of FIG. 1 will be described.

[0045] Fig. 3A shows an example of a cross-sectional configuration of two sensor pixels PX1 and PX5 among the multiple sensor pixels PX that constitute the pixel array unit 111. Fig. 3B shows an example of a cross-sectional configuration of two sensor pixels PX1 and PX2 among the multiple sensor pixels PX that constitute the pixel array unit 111. More specifically, Fig. 3A shows a cross section taken along the IIIA-IIIA cutting line in the X-axis direction that passes through sensor pixel PX1 and sensor pixel PX5 shown in Figs. 4A to 4H, respectively. Fig. 3B shows a cross section taken along the IIIB-IIIB cutting line in the Y-axis direction that passes through sensor pixel PX1 and sensor pixel PX2 shown in Figs. 4A to 4H, respectively.

[0046] 4A to 4H each show an example of a planar configuration of eight sensor pixels PX1 to PX8 arranged in a 2-row, 4-column grid. Specifically, FIGS. 4A to 4H respectively show planar configurations at height positions Lv1 to Lv8 shown in FIGS. 3A and 3B. In the pixel array section 111 of this embodiment, the sensor pixels PX1 to PX8 shown in FIGS. 4A to 4H are arranged as minimum units in repeated arrays along both the X-axis and Y-axis directions. Note that it is preferable that the components of the sensor pixels PX1 to PX8 have substantially the same structure. It is also preferable that the sensor pixels PX1 to PX4 arranged in the Y-axis direction and the sensor pixels PX5 to PX8 also arranged in the Y-axis direction have a symmetrical structure in the X-axis direction.

[0047] Specifically, like the sensor pixels PX1 and PX4 shown in Fig. 2, the sensor pixels PX2 and PX3 have photoelectric conversion units PD2 and PD3, first to third transfer transistors TG2A to TG2C and TG3A to TG3C, charge holding units MEM2 and MEM3, discharge transistors OFG2 and OFG3, discharge units OFD2 and OFD3, buffers BUF2 and BUF3, etc. Furthermore, the sensor pixels PX2 and PX3 share a vertical signal line VSL23, a charge-voltage conversion unit FD23, a reset transistor RST23, an amplification transistor AMP23, a selection transistor SEL23, etc.

[0048] The sensor pixels PX5 to PX8 have configurations corresponding to the sensor pixels PX1 to PX4, respectively. For example, like the sensor pixels PX1 and PX4 shown in FIG. 2, the sensor pixels PX5 and PX8 have photoelectric conversion units PD5 and PD8, first to third transfer transistors TG5A to TG5C and TG8A to TG8C, charge holding units MEM5 and MEM8, discharge transistors OFG5 and OFG8, discharge units OFD5 and OFD8, and buffers BUF5 and BUF8. The sensor pixels PX5 and PX8 also share a vertical signal line VSL58, a charge-voltage conversion unit FD58, a reset transistor RST58, an amplifier transistor AMP58, and a selection transistor SEL58. Similarly to sensor pixels PX2 and PX3, sensor pixels PX6 and PX7 have photoelectric conversion units PD6 and PD7, first to third transfer transistors TG6A to TG6C and TG7A to TG7C, charge holding units MEM6 and MEM7, discharge transistors OFG6 and OFG7, discharge units OFD6 and OFD7, buffers BUF6 and BUF7, etc. Furthermore, sensor pixels PX6 and PX7 share a vertical signal line VSL67, a charge-voltage conversion unit FD67, a reset transistor RST67, an amplification transistor AMP67, a selection transistor SEL67, etc.

[0049] 3A and 3B, the pixel array unit 111 has a structure in which a first substrate S1 including a first layer LY1 and a second layer LY2 and a second substrate S2 including a third layer LY3 are bonded together at a bonding interface K. The wiring layers are bonded together at the bonding interface K. The bonding between the wiring layers is preferably performed by so-called Cu-Cu bonding, in which surfaces of metal layers such as Cu (copper) are bonded together by activating them with plasma irradiation.

[0050] As shown in FIGS. 3A, 3B, and 4C to 4E, photoelectric conversion units PD (PD1 to PD8) and the like are formed on the first level LY1 of the pixel array unit 111. The sensor pixels PX1 to PX8 on the first level LY1 each have a semiconductor substrate 11 made of a semiconductor material such as silicon (Si), and the photoelectric conversion units PD (PD1 to PD8) embedded in the semiconductor substrate 11. The semiconductor substrate 11 also includes a front surface 11S1 and a back surface 11S2 opposite to the front surface 11S1. The back surface 11S2 is the surface onto which external light is incident, and is provided with a color filter formation layer including color filters CF (CF1 to CF8) (see FIGS. 3A, 3B, and 4B). For example, color filter CF1 transmits green light, color filter CF2 transmits red light, color filter CF3 transmits green light, color filter CF4 transmits blue light, color filter CF5 transmits red light, color filter CF6 transmits green light, color filter CF7 transmits blue light, and color filter CF8 transmits green light. However, the color arrangement pattern is not limited to this. On the side opposite to the back surface 11S2 of the color filters CF (CF1 to CF8), for example, a total of 32 lenses LS (LS11 to 14, LS21 to 24, LS31 to 34, LS41 to 44, LS51 to 54, LS61 to 64, LS71 to 74, LS81 to 84) are further provided (see FIGS. 3A, 3B, and 4A). Details of the lenses LS will be described later. In addition, the tips of two vertical trench gates 51, 52 extending in the depth direction (+Z direction) from the bottom of the transfer gate TRZ (TRZ1 to TRZ8) provided on the surface 11S1 are in contact with the photoelectric conversion units PD (PD1 to PD8) (see Figures 3A, 3B and 4E).

[0051] The first tier LY1 of the semiconductor substrate 11 is further provided with element isolation sections 12 surrounding each of the photoelectric conversion sections PD (PD1 to PD8) (FIGS. 3A, 3B, and 4C). The element isolation sections 12 are wall-shaped members that extend in the Z-axis direction through the semiconductor substrate 11 at the boundary positions between adjacent sensor pixels PX and surround each of the photoelectric conversion sections PD. The element isolation sections 12 electrically isolate adjacent sensor pixels PX from each other. The element isolation sections 12 also prevent noise such as color mixing from occurring due to leakage light from adjacent sensor pixels PX entering the photoelectric conversion sections PD (PD1 to PD8). The element isolation sections 12 are made of an insulating material such as silicon oxide.

[0052] As described above, the photoelectric conversion units PD1 to PD8 are formed in the first tier LY1. In the sensor pixels PX1 to PX8, the effective pixel regions 1R (1R1 to 1R8) surrounded by the element isolation portions 12 are rectangular regions having a first aspect ratio AR1 (=X1 / Y1) defined by a width X1 and a length Y1, as shown in FIG. 4C. FIG. 4C shows an example in which the first aspect ratio AR1 is 1, i.e., the width X1 and the length Y1 are equal, and the photoelectric conversion units PD1 to PD8 are formed in each of the effective pixel regions 1R1 to 1R8.

[0053] As shown in FIG. 4G, the second level LY2 of the first substrate S1 constituting the pixel array section 111 includes charge retention portion formation regions 2R (2R1 to 2R8) including charge retention portions MEM1 to MEM8. Each of the charge retention portion formation regions 2R1 to 2R4 is a rectangular region defined by a width X2 and a length Y2 in the XY plane and having a second aspect ratio AR2 (=X2 / Y2). Here, the first aspect ratio AR1 and the second aspect ratio AR2 are different. FIG. 4G shows an example in which the second aspect ratio AR2 is 4, i.e., the length Y2 is four times the width X2. Note that in FIGS. 4C and 4G, the width X2 is half the width X1, and the length Y2 is twice the length Y1.

[0054] In the second tier LY2, charge retention portion formation regions 2R1-2R4 corresponding to the sensor pixels PX1-PX4 are formed, for example, first to third transfer transistors TG1A-TG1C, TG2A-TG2C, TG3A-TG3C, and TG4A-TG4C, charge retention portions MEM1-MEM4, discharge transistors OFG1-OFG4, discharge portions OFD1-OFD4, buffers BUF1-BUF4, a power supply VDD, and charge-voltage conversion portions FD14 and FD23 (see FIGS. 3A, 3B, and 4G). Note that the charge retention portions MEM1-MEM4 are located below, for example, the transfer gates TRY1-TRY4, TRX1-TRX4, and TRG1-TRG4. Similarly, in the second tier LY2, charge retention portion formation regions 2R5-2R8 corresponding to sensor pixels PX5-PX8 include, for example, first to third transfer transistors TG5A-TG5C, TG6A-TG6C, TG7A-TG7C, and TG8A-TG8C, charge retention portions MEM5-MEM8, discharge transistors OFG5-OFG8, discharge portions OFD5-OFD8, buffers BUF5-BUF8, power supply VDD, and charge-voltage conversion portions FD58 and FD67 (see FIGS. 3A, 3B, and 4G). Note that the charge retention portions MEM5-MEM8 are located below, for example, transfer gates TRY5-TRY8, TRX5-TRX8, and TRG5-TRG8.

[0055] In the charge retention portion forming regions 2R1 to 2R8 of the second tier LY2, two vertical trench gates 51 and 52 are provided side by side in the X-axis direction corresponding to the sensor pixels PX1 to PX8 (see FIGS. 3A, 3B, 4E, and 4F). The vertical trench gates 51 and 52 constitute part of the charge transfer portion and connect the photoelectric conversion portions PD1 to PD8 to the transfer gates TRZ1 to TRZ8, respectively, providing a path for transferring charges from the photoelectric conversion portions PD1 to PD8 to the charge retention portions MEM1 to MEM8, which are the transfer destinations, via the buffers BUF1 to BUF8. Note that only one vertical trench gate may be provided, or three or more may be provided.

[0056] Between the vertical trench gates 51 and 52 and the back surface 11S2, a horizontal light-shielding film 13 is provided, extending along the XY plane so as to overlap with the vertical trench gates 51 and 52 in the Z-axis direction (see FIGS. 3A, 3B, and 4D). The horizontal light-shielding film 13 is a light-shielding member that blocks incident light from entering the charge storage units MEM1 to MEM8, and is provided so as to overlap with a horizontal light-shielding film 14 (described later) in the Z-axis direction. The horizontal light-shielding film 13 is connected, for example, to an end of the element isolation unit 12 on the side opposite the back surface 11S2. As shown in FIG. 4D, openings 13K1 to 13K8 are provided in part of the horizontal light-shielding film 13 so as to partially separate the photoelectric conversion units PD1 to PD8 in the Z-axis direction. Charges generated in the photoelectric conversion units PD1 to PD8 move to the vertical trench gates 51 and 52 through the openings 13K1 to 13K8, respectively. The positions of the openings 13K1 to 13K8 in the XY plane are different from the positions of openings 14K1 to 14K8 (described later) in the horizontal light-shielding film 14 in the XY plane.

[0057] As described above, in this embodiment, for example, the charge retention portion formation region 2R1 is not provided only directly above the effective pixel region 1R1 that constitutes sensor pixel PX1, but the charge retention portion MEM1 is formed across both the effective pixel region 1R1 and the effective pixel region 1R2. Similarly, the charge retention portion formation region 2R2 is not provided only directly above the effective pixel region 1R2 that constitutes sensor pixel PX2, but the charge retention portion MEM2 is formed across both the effective pixel region 1R1 and the effective pixel region 1R2. In other words, the effective pixel region 1R1 overlaps with a portion of the charge retention portion formation region 2R1 and a portion of the charge retention portion formation region 2R2, and the effective pixel region 1R2 overlaps with the remaining portions of the charge retention portion formation region 2R1 and the charge retention portion formation region 2R2.

[0058] Each of the charge retention portion forming regions 2R1 to 2R8 may further include a light-shielding wall 17 extending in the Z-axis direction and also extending along the Y-axis direction. The charge retention portions MEM1 to MEM4 are disposed so as to be sandwiched between two light-shielding walls 17 adjacent to each other in the X-axis direction. The light-shielding walls 17 are members that block light from entering the charge retention portions MEM1 to MEM8.

[0059] Between the photoelectric conversion units PD1 to PD4 and the charge retention units MEM1 to MEM4, a horizontal light-shielding film 14 extending along the XY plane is provided so as to overlap with the horizontal light-shielding film 13 in the thickness direction (Z-axis direction) (FIGS. 3A, 3B, and 4F). Similar to the horizontal light-shielding film 13 and the light-shielding wall 17, the horizontal light-shielding film 14 is a member that blocks the entrance of incident light into the charge retention units MEM1 to MEM8, and prevents light that has passed through the photoelectric conversion units PD1 to PD8 from entering the charge retention units MEM1 to MEM8 and generating noise. Note that light that enters from the rear surface 11S2 and passes through the photoelectric conversion units PD1 to PD8 without being absorbed by them is reflected by the horizontal light-shielding film 14 and enters the photoelectric conversion units PD1 to PD8 again. That is, the horizontal light-shielding film 14 also functions as a reflector, and allows light that has passed through the photoelectric conversion units PD1 to PD8 to be incident again onto the photoelectric conversion units PD1 to PD8, thereby improving photoelectric conversion efficiency. However, the horizontal light-shielding film 14 is provided with openings 14K (14K1 to 14K8) through which charges generated by the photoelectric conversion units PD1 to PD8 can pass. The vertical trench gates 51 and 52 are provided so as to penetrate the openings 14K1 to 14K8, respectively. The openings 14K1 to 14K8 are preferably provided at positions different from the openings 13K1 to 13K8, respectively, in the effective pixel region 1R. The horizontal light-shielding film 14 is preferably provided across the entire XY plane of the pixel array unit 111, excluding the openings 14K1 to 14K8. The horizontal light-shielding film 14 may also be connected to a light-shielding wall 17. The horizontal light-shielding films 13, 14 and the light-shielding wall 17 each have a two-layer structure consisting of, for example, an inner layer and an outer layer surrounding the inner layer. The inner layer is made of a material containing at least one of a light-shielding elemental metal, a metal alloy, a metal nitride, and a metal silicide. More specifically, examples of materials constituting the inner layer include aluminum (Al), copper (Cu), cobalt (Co), tungsten (W), titanium (Ti), tantalum (Ta), nickel (Ni), molybdenum (Mo), chromium (Cr), iridium (Ir), platinum-iridium, titanium nitride (TiN), and tungsten-silicon compounds. Among these, aluminum (Al) is the most optically preferable material. The inner layer may also be made of graphite or an organic material.The outer layer portion is made of an insulating material such as SiOx (silicon oxide), and the outer layer portion ensures electrical insulation between the inner layer portion and the semiconductor substrate 11.

[0060] The horizontal light-shielding film 14 extending in the XY plane can be formed by, for example, removing a portion of the semiconductor substrate 11 by wet etching to form a space inside the semiconductor substrate 11, and then filling the space with the above-mentioned material. In the wet etching process, for example, if the semiconductor substrate 11 is made of Si{111}, a predetermined alkaline aqueous solution is used to perform crystal anisotropic etching, which utilizes the property that the etching rate varies depending on the plane orientation of Si{111}. More specifically, in the case of a Si{111} substrate, <111> For the etching rate in the direction <110> This utilizes the property that the etching rate in the direction is sufficiently high. <111> The direction is the direction having three Si back bonds. <110> The direction is a direction having one or two Si back bonds, which corresponds to the X-axis direction in this embodiment. As the predetermined alkaline aqueous solution, inorganic solutions such as KOH, NaOH, or CsOH can be used, and organic solutions such as EDP (ethylenediaminepyrocatechol aqueous solution), N2H4 (hydrazine), NH4OH (ammonium hydroxide), or TMAH (tetramethylammonium hydroxide) can be used.

[0061] When forming a space for forming the horizontal light-shielding film 14 by wet etching, the thickness (dimension in the Z-axis direction) of the horizontal light-shielding film 14 increases as the wet etching progresses in the XY plane. Therefore, to prevent the horizontal light-shielding film 14 from becoming thicker than necessary, it is desirable to keep the wet etching progress as short as possible in the XY plane. Therefore, as shown in FIG. 3A of this embodiment, it is advisable to shorten the dimension of the horizontal light-shielding film 14 in the X-axis direction. In this embodiment, the trenches dug when forming the light-shielding walls 17 extending in the Y-axis direction can be used to form the space for forming the horizontal light-shielding film 14 by wet etching that progresses in the X-axis direction. This can prevent the thickness of the horizontal light-shielding film 14 from increasing too much.

[0062] In this embodiment, the semiconductor substrate 11 is, for example, a P-type (first conductivity type), and the photoelectric conversion unit PD and the charge holding units MEM1 to MEM4 are an N-type (second conductivity type).

[0063] 3A, 3B, and 4H, in the third tier LY3, for example, a vertical signal line VSL14, a charge-voltage converter FD14, a reset transistor RST14, an amplifier transistor AMP14, a selection transistor SEL14, etc. are formed in regions corresponding to the effective pixel regions 1R1 and 1R2 and the charge retention portion formation regions 2R1 and 2R2, respectively. Furthermore, a vertical signal line VSL23, a charge-voltage converter FD23, a reset transistor RST23, an amplifier transistor AMP23, a selection transistor SEL23, etc. are formed in regions corresponding to the effective pixel regions 1R3 and 1R4 and the charge retention portion formation regions 2R3 and 2R4, respectively. Furthermore, a vertical signal line VSL58, a charge-voltage converter FD58, a reset transistor RST58, an amplifier transistor AMP58, a selection transistor SEL58, etc. are formed in regions corresponding to the effective pixel regions 1R5 and 1R6 and the charge retention portion formation regions 2R5 and 2R6, respectively. Furthermore, in regions corresponding to the effective pixel regions 1R7 and 1R8 and the charge holding portion forming regions 2R7 and 2R8, respectively, a vertical signal line VSL67, a charge-voltage converter FD67, a reset transistor RST67, an amplifier transistor AMP67, a selection transistor SEL67, etc. are formed.

[0064] (Lens LS) As shown in FIG. 4A, in each of the sensor pixels PX (PX1 to PX8) of the present embodiment, a plurality of lenses LS are disposed in an effective pixel region 1R (1R1 to 1R8) that is surrounded by an element isolation portion 12 and extends along the XY plane. Specifically, in the effective pixel region 1R1 of the sensor pixel PX1, lenses LS11 to LS14, each having substantially the same dimensions and substantially the same refractive power, are arranged in a matrix of two rows and two columns along the XY plane. The dimensions of the lenses LS11 to LS14 in the X-axis direction and the Y-axis direction are substantially equal. The same is true for the sensor pixels PX2 to PX8. The plurality of lenses LS are a focusing optical system that focuses incident light from an object to be imaged. Each of the plurality of lenses LS focuses the incident light at a position in the effective pixel region 1R that overlaps with the horizontal light-shielding film 14 in the thickness direction (Z-axis direction). Here, each lens LS focuses light at a position other than the center of the corresponding effective pixel region 1R. In this embodiment, for example, in sensor pixel PX1, lenses LS11 to LS14 (FIG. 4A) are configured to focus incident light toward focusing points FP11 to FP14 (FIG. 4F), respectively, in the effective pixel region 1R1. The same applies to the other sensor pixels PX2 to PX8. Furthermore, it is preferable that the horizontal light-shielding film 14 includes openings 14K (14K1 to 14K8) at positions other than the center of the effective pixel region 1R. This is because the intensity of incident light is usually relatively high at the center of the effective pixel region 1R. Therefore, it is preferable that the focusing points FP11 to FP14 are each located at a position other than the center of the effective pixel region 1R1 and different from the position of the opening 14K1.

[0065] (Operation of sensor pixel PX) Next, the operation of the sensor pixel PX will be described with reference to Figures 2 to 4H, etc. In the sensor pixel PX, first, based on the drive control of the system control unit 115, a high-level drive signal is supplied to the discharge transistor OFG and the transfer gate TRZ before exposure, thereby turning on the discharge transistor OFG and the transfer gate TRZ. As a result, the charge accumulated in the photoelectric conversion unit PD is discharged to the discharge unit OFD, and the photoelectric conversion unit PD is reset.

[0066] After the photoelectric conversion unit PD is reset, the discharge transistor OFG and the transfer gate TRZ are turned off by supplying a low-level drive signal to each of them based on the drive control of the system control unit 115. This starts exposure in all sensor pixels PX in the pixel array unit 111, and charges are generated and accumulated in each photoelectric conversion unit PD that receives light from the subject.

[0067] After the scheduled exposure time has elapsed, in all sensor pixels PX of the pixel array unit 111, the drive signals to the transfer gates TRZ and TRY are turned on based on the drive control of the system control unit 115. As a result, in each sensor pixel PX, the charge accumulated in the photoelectric conversion unit PD is transferred from the photoelectric conversion unit PD via the transfer gates TRZ and TRY to the charge holding unit MEM, and is temporarily held in the charge holding unit MEM.

[0068] Next, based on the drive control of the system control unit 115, the drive signals to the transfer gates TRZ and TRY are turned off, and then a readout operation is performed to sequentially read out the charges held in the charge holding units MEM of each sensor pixel PX. The charge readout operation is performed, for example, row by row in the pixel array unit 111. Specifically, the transfer gates TRX and TRG are turned on by drive signals for each row to be read out. As a result, the charges held in the charge holding units MEM of each sensor pixel PX are transferred to the charge-voltage conversion unit FD row by row.

[0069] Thereafter, when the selection transistor SEL is turned on by a drive signal, an electrical signal indicating a level corresponding to the charge held in the charge-voltage conversion unit FD is output to the column signal processing unit 113 via the vertical signal line VSL, sequentially passing through the amplification transistor AMP and the selection transistor SEL.

[0070] [Effects of the solid-state imaging device 101] As described above, in the solid-state imaging device 101 of this embodiment, multiple lenses LS are arranged in the effective pixel region 1R of one sensor pixel PX. This allows the solid-state imaging device 101 to reduce PLS and achieve better imaging performance.

[0071] The following description will be made by comparing the sensor pixel PX1X shown in Fig. 5A as a reference example with the sensor pixel PX1 of the present embodiment shown in Fig. 5B. Fig. 5A is a cross-sectional view schematically showing the path of light L1 incident on the sensor pixel PX1X as a reference example. Fig. 5B is a cross-sectional view schematically showing the paths of light L11 and L14 incident on the sensor pixel PX1 of the present embodiment.

[0072] In the sensor pixel PX1X shown in FIG. 5A as a reference example, one lens LS1 is provided for one effective pixel region 1R1. Therefore, light L1 incident on the sensor pixel PX1X passes through the lens LS1 and travels in the -Z direction, and is then focused near the center of the effective pixel region 1R1 by the refractive power of the lens LS1. Therefore, while part of the incident light L1 is blocked by the horizontal light-shielding film 13, the remaining part of the incident light L1 is blocked by the horizontal light-shielding film 13 as shown by the arrow. The incident light L1 is diffracted at the opening edge of the horizontal light-shielding film 13 and then travels into the sensor pixel PX1X. The incident light L1 that penetrates deeper than the horizontal light-shielding film 13 is diffracted at the opening edge of the horizontal light-shielding film 14 as shown by the arrow, and then travels into the sensor pixel PX1X. As a result, part of the incident light L1 reaches the charge holding unit MEM2, which may cause a deterioration in PLS.

[0073] In contrast, in the sensor pixel PX1 of the present embodiment shown in FIG. 5B, multiple lenses LS11-LS14 are arranged in one effective pixel region 1R1. Here, the multiple lenses LS11-LS14 are configured to focus incident light at focusing points FP11-FP14, respectively, which are located at positions different from the center position of the effective pixel region 1R1. Therefore, as shown in FIG. 5B, incident light L11 incident on, for example, lens LS11 of sensor pixel PX1 strikes, for example, horizontal light-shielding film 13 and is blocked by the horizontal light-shielding film 13. Furthermore, incident light L14 incident on, for example, lens LS14 of sensor pixel PX1 strikes, for example, horizontal light-shielding film 14 and is blocked by the horizontal light-shielding film 14, even if it passes through opening 13K as shown in FIG. 5B. Therefore, the incident light L11 and L14 can be prevented from reaching the charge storage unit MEM2.

[0074] As described above, in this embodiment, incident light is focused by avoiding the central position where the vicinity of opening 13K of horizontal light-shielding film 13 overlaps with the vicinity of opening 14K of horizontal light-shielding film 14. As a result, it is possible to prevent unwanted light from being incident on charge holding unit MEM, and to improve PLS.

[0075] In addition, in this embodiment, a lens array is used for each sensor pixel PX, in which four lenses LS having substantially the same dimensions and substantially the same refractive power are arranged in a matrix of two rows and two columns, which allows the amount of incident light to be distributed more evenly across the entire effective pixel area 1R1 having a substantially square shape.

[0076] <2. Modification of the First Embodiment> In the first embodiment described above, as shown in Fig. 4A, a lens array in which four lenses LS having substantially the same size and substantially the same refractive power are arranged in a matrix of two rows and two columns for each sensor pixel PX is used as the focusing optical system, but the present disclosure is not limited to this. The present disclosure also includes other embodiments, for example, as shown in the following Modifications 1-1 to 1-9.

[0077] (Variation 1-1) FIG. 6A is a plan view illustrating a lens arrangement pattern in a pixel array unit 111A as a first modified example of the first embodiment. As illustrated in FIG. 6A, in the lens arrangement pattern in the pixel array unit 111A, two lenses LS are arranged per sensor pixel PX, which are not divided in the X-axis direction but are equally divided only in the Y-axis direction. For example, sensor pixel PX1 is provided with two horizontally elongated lenses LS11 and LS12 adjacent in the Y-axis direction. The lenses LS11 and LS12 in the lens arrangement pattern in the pixel array unit 111A have twice the dimensions in the X-axis direction and the same dimensions in the Y-axis direction as the lenses LS11 and LS12 in the lens arrangement pattern in the pixel array unit 111 (FIG. 4A). The same applies to the other sensor pixels PX2 to PX8. As will be described later, the lens arrangement pattern in the pixel array unit 111A is highly compatible with an embodiment in which image-plane phase difference detection pixels are provided in some of the sensor pixels PX.

[0078] (Variation 1-2) FIG. 6B is a plan view illustrating a lens arrangement pattern in a pixel array unit 111B according to a second modification of the first embodiment. As shown in FIG. 6B, in the lens arrangement pattern in the pixel array unit 111B, two lenses LS are arranged per sensor pixel PX, which are not divided in the Y-axis direction but are equally divided only in the X-axis direction. For example, sensor pixel PX1 is provided with two vertically elongated lenses LS11 and LS12 adjacent in the X-axis direction. The lenses LS11 and LS12 in the lens arrangement pattern in the pixel array unit 111B have the same dimensions in the X-axis direction as the lenses LS11 and LS12 in the lens arrangement pattern ( FIG. 4A ) of the first embodiment, but are twice as large in the Y-axis direction. The same is true for the other sensor pixels PX2 to PX8. As will be described later, the lens arrangement pattern in the pixel array unit 111B is also highly compatible with an embodiment in which image-plane phase-difference detection pixels are provided in some of the sensor pixels PX.

[0079] (Variation 1-3) 6C is a plan view illustrating a lens arrangement pattern in a pixel array unit 111C as a third modified example of the first embodiment. As shown in FIG. 6C, in the lens arrangement pattern in the pixel array unit 111C, nine lenses LS, which are equally divided into three in both the X-axis direction and the Y-axis direction, are arranged in a matrix for each sensor pixel PX. In this manner, the number of lenses LS per sensor pixel PX may be changed depending on the position of the opening 13K in the horizontal light-shielding film 13 and the position of the opening 14K in the horizontal light-shielding film 14.

[0080] (Variation 1-4) 6D is a plan view showing a lens arrangement pattern in a pixel array unit 111D as a fourth modified example of the first embodiment. As shown in FIG. 6D, in the lens arrangement pattern in the pixel array unit 111D, 16 lenses LS are arranged in a matrix for each sensor pixel PX, with the 16 lenses LS being equally divided into four in both the X-axis direction and the Y-axis direction. In this way, the number of lenses LS per sensor pixel PX may be changed depending on the position of the opening 13K in the horizontal light-shielding film 13 and the position of the opening 14K in the horizontal light-shielding film 14.

[0081] (Variation 1-5) 6E is a plan view illustrating a lens arrangement pattern in a pixel array unit 111E as a fifth modified example of the first embodiment. As shown in FIG. 6E, the lens arrangement pattern in the pixel array unit 111E is a mode in which the central lens LS of the nine lenses LS corresponding to one sensor pixel PX in the pixel array unit 111C shown in FIG. 6C is removed. According to the lens arrangement pattern in the pixel array unit 111E, the component of incident light that is focused at the center of the effective pixel region 1R1 is reduced, and therefore, compared to the pixel array unit 111C of FIG. 6C, it is possible to further reduce the penetration of incident light into the charge holding unit MEM.

[0082] (Variations 1-6 to 1-8) 6F to 6H are plan views illustrating lens arrangement patterns in pixel array units 111F to 111H as sixth to eighth modifications of Embodiment 1. As shown in FIGS. 6F to 6H, the lens arrangement patterns in the pixel array units 111F to 111H include two or more types of lenses LS with different dimensions.

[0083] (Variation 1-9) 6I is a plan view illustrating a lens arrangement pattern in a pixel array unit 111I as a ninth modification of Embodiment 1. As shown in Fig. 6I, in the lens arrangement pattern in the pixel array unit 111I, all of the lenses LS have the same shape and the same size, but include lenses LS oriented with their longitudinal direction in the X-axis direction and lenses LS oriented with their longitudinal direction in the Y-axis direction.

[0084] 3. Second Embodiment [Configuration of pixel array unit 211] FIG. 7A shows an example cross-sectional configuration of two sensor pixels PX1 and PX5 among the multiple sensor pixels PX constituting the pixel array unit 211 according to a second embodiment of the present disclosure. FIG. 7B shows an example cross-sectional configuration of two sensor pixels PX1 and PX2 among the multiple sensor pixels PX constituting the pixel array unit 211. Also, FIG. 8A shows a planar configuration at a height position Lv1 shown in FIGS. 7A and 7B, and FIG. 8B shows a planar configuration at a height position Lv3 shown in FIGS. 7A and 7B. Also, FIGS. 9A and 9B correspond to FIGS. 3A and 3B, respectively, in the first embodiment. Also, FIGS. 8A and 8B correspond to FIGS. 4A and 4C, respectively, in the first embodiment. More specifically, FIG. 7A shows a cross-section taken along the VIIA-VIIA cutting line in the X-axis direction, which passes through the sensor pixels PX1 and PX5 shown in FIGS. 8A and 8B, respectively. FIG. 7B shows a cross section taken along line VIIB-VIIB in the Y-axis direction, which passes through sensor pixel PX1 and sensor pixel PX2 shown in FIGS. 8A and 8B, respectively.

[0085] In the first embodiment, four lenses LS arranged in two rows and two columns are provided per sensor pixel PX. This configuration allows the focal point FP of the lenses LS to be shifted from the center of the effective pixel region 1R1, resulting in reduced PLS. However, shifting the focal point FP of the lenses LS from the center of the effective pixel region 1R1 also means that incident light approaches the element isolation regions 12 provided between the sensor pixels PX. Therefore, when incident light is obliquely incident on the back surface 11S2, it may be vignetted by the element isolation regions 12 after passing through the lenses LS and color filters CF and entering the semiconductor substrate 11. In this case, the incident sensitivity to oblique incident light decreases.

[0086] Therefore, in the pixel array section 211 of this embodiment, as shown in Figures 7A and 8A, the multiple lenses LS are formed into a horizontally elongated planar shape with the X-axis direction as the longitudinal direction, thereby improving the oblique incidence characteristics in the X-axis direction (horizontal direction).

[0087] 7B and 8B, in the pixel array section 211 of the present embodiment, the element isolation sections 12 are provided only in the portions that separate the sensor pixels PX adjacent to each other in the X-axis direction, i.e., only in the portions that extend in the Y-axis and Z-axis directions. In other words, in the present embodiment, the element isolation sections 12 provided in a lattice pattern in the first embodiment are not provided with portions that extend in the X-axis direction. This reduces vignetting of incident light that is inclined in the Y-axis direction (vertical direction), and improves the oblique incidence characteristics in the Y-axis direction (vertical direction).

[0088] [Effects of pixel array section 211] Due to the above-described configuration, the pixel array section 211 of this embodiment can exhibit better sensitivity characteristics than the pixel array section 111 of the first embodiment, even when incident light includes components inclined with respect to both the X-axis direction and the Y-axis direction.

[0089] In this embodiment, the lenses LS have a horizontally elongated planar shape with the X-axis direction as the longitudinal direction, and the element isolation section 12 is provided only in portions extending in the Y-axis and Z-axis directions, but the present disclosure may adopt only one of these. Even in this case, it is possible to improve the oblique incidence characteristics in the X-axis direction (horizontal direction) or the Y-axis direction (vertical direction).

[0090] <4. Third Embodiment> [Configuration of pixel array unit 311] Fig. 9A shows an example cross-sectional configuration of two sensor pixels PX1 and PX5 among the plurality of sensor pixels PX constituting a pixel array unit 311 according to a third embodiment of the present disclosure. Fig. 9B shows an example cross-sectional configuration of two sensor pixels PX1 and PX2 among the plurality of sensor pixels PX constituting the pixel array unit 311. Note that Figs. 9A and 9B correspond to Figs. 3A and 3B, respectively, in the first embodiment.

[0091] In the pixel array unit 311 of this embodiment, each sensor pixel PX further includes an inner lens INL (INL1, INL2, INL5) as a second lens layer inserted between the lens LS as a first lens layer and the photoelectric conversion unit PD in the thickness direction (Z-axis direction). In the pixel array unit 311 of this embodiment, one lens LS is provided per sensor pixel PX, while four inner lenses INL are provided per sensor pixel PX, arranged in two rows and two columns.

[0092] [Effects of pixel array section 311] In the pixel array section 311 of this embodiment, incident light is first condensed to a certain extent by the lens LS, and then the multiple inner lenses INL can condense the light at a condensing point other than the center position of the effective pixel region 1R1. This not only improves the PLS characteristics, but also prevents vignetting in the element isolation section 12 even for incident light that is inclined with respect to the rear surface 11S2, thereby improving the oblique incidence characteristics.

[0093] 5. Modification of the Third Embodiment In the third embodiment, as shown in Figures 9A and 9B, a structure in which one lens LS and multiple inner lenses INL are stacked for one sensor pixel PX has been exemplified, but the present disclosure is not limited to this. The present disclosure also includes other forms, for example, as shown in the following Modifications 3-1 to 3-3.

[0094] (Variation 3-1) Fig. 10A shows an example of a cross-sectional configuration of two sensor pixels PX1 and PX5 among the plurality of sensor pixels PX constituting a pixel array unit 311A ​​as a first modified example of the third embodiment. Fig. 10B shows an example of a cross-sectional configuration of two sensor pixels PX1 and PX2 among the plurality of sensor pixels PX constituting the pixel array unit 311A. Note that Figs. 10A and 10B correspond to Figs. 9A and 9B in the third embodiment, respectively.

[0095] 10A and 10B, in the pixel array unit 311A, a plurality of lenses LS located on the incident side of the inner lens INL are also provided per sensor pixel PX. Specifically, for example, four lenses LS arranged in two rows and two columns are provided per sensor pixel PX. According to this modification, the refractive power of the lenses LS can be further improved, so that vignetting in the element isolation unit 12 can be avoided even for incident light with a larger incident angle, and oblique incidence characteristics can be improved.

[0096] (Variation 3-2) Fig. 11A shows an example of a cross-sectional configuration of two sensor pixels PX1 and PX5 among the plurality of sensor pixels PX constituting a pixel array unit 311B as a second modified example of the third embodiment. Fig. 11B shows an example of a cross-sectional configuration of two sensor pixels PX1 and PX2 among the plurality of sensor pixels PX constituting the pixel array unit 311B. Note that Figs. 11A and 11B correspond to Figs. 9A and 9B in the third embodiment, respectively.

[0097] 11A and 11B, in the pixel array unit 311B, four lenses LS arranged in, for example, two rows and two columns are provided per sensor pixel PX, while only one inner lens INL is provided per sensor pixel PX. In this modified example, the same effects as in the third embodiment can be expected.

[0098] (Variation 3-3) Fig. 12A shows an example of a cross-sectional configuration of two sensor pixels PX1 and PX5 among the plurality of sensor pixels PX constituting a pixel array unit 311C as a second modified example of the third embodiment. Fig. 12B shows an example of a cross-sectional configuration of two sensor pixels PX1 and PX2 among the plurality of sensor pixels PX constituting the pixel array unit 311C. Note that Figs. 12A and 12B correspond to Figs. 9A and 9B in the third embodiment, respectively.

[0099] 12A and 12B, in the pixel array unit 311C, four lenses LS arranged in, for example, two rows and two columns are provided per sensor pixel PX, while optical waveguides WG (WG1, WG2, WG5) are provided instead of the inner lenses INL. In this modified example, the same effects as in the third embodiment can be expected.

[0100] 6. Fourth Embodiment [Configuration of pixel array unit 411] FIG. 13A illustrates an example cross-sectional configuration of two sensor pixels PX1 and PX5 among the multiple sensor pixels PX constituting the pixel array unit 411 according to the fourth embodiment of the present disclosure. FIG. 13B illustrates an example cross-sectional configuration of two sensor pixels PX1 and PX2 among the multiple sensor pixels PX constituting the pixel array unit 411. FIG. 14A illustrates a planar configuration at a height position Lv1 shown in FIGS. 13A and 13B, and FIG. 14B illustrates a planar configuration at a height position Lv3 shown in FIGS. 13A and 13B. FIGS. 13A and 13B correspond to FIGS. 3A and 3B, respectively, in the first embodiment. FIGS. 14A and 14B correspond to FIGS. 4A and 4C, respectively, in the first embodiment. More specifically, FIG. 13A illustrates a cross-section taken along a line XIIIA-XIIIA in the X-axis direction, which passes through the sensor pixels PX1 and PX5 shown in FIGS. 14A and 14B. FIG. 13B shows a cross section taken along the XIIIB-XIIIB cutting line in the Y-axis direction, which passes through the sensor pixel PX1 and the sensor pixel PX2 shown in FIGS. 14A and 14B, respectively.

[0101] In the first embodiment, four lenses LS arranged in two rows and two columns are provided per sensor pixel PX. This configuration allows the focal point FP of the lenses LS to be shifted from the center of the effective pixel region 1R1, resulting in reduced PLS. However, a sensor pixel PX employing such divided lenses LS cannot be used as an image plane phase difference detection pixel (ZAF pixel) as is. For example, consider a case where a ZAF light-shielding film is provided to cover the left half of the photoelectric conversion unit PD to detect image plane phase differences in the left and right directions. In this case, all incident light passing through the two lenses LS occupying the left half of the four lenses LS is blocked by the ZAF light-shielding film, while all incident light passing through the two lenses LS occupying the right half is incident on the photoelectric conversion unit PD. As a result, changes in the intensity of the incident light due to differences in the angle of incidence are barely detectable, and as a result, phase difference information cannot be obtained.

[0102] Therefore, in the pixel array section 411 of this embodiment, as shown in FIGS. 13A to 14B, the ZAF light-shielding films 16 are provided at positions corresponding to the positions of the multiple lenses LS in the direction in which the image plane phase difference is to be detected. The ZAF light-shielding films 16 are formed of a material that blocks visible light, such as metal. In the example of FIGS. 13A to 14B, in order to obtain image plane phase difference information in the X-axis direction (left-right direction) in the sensor pixel PX5, two ZAF light-shielding films 16 (16A, 16B) are arranged so as to selectively cover a part of the effective pixel region 1R5. The ZAF light-shielding film 16A is provided at a position overlapping with the right halves of the lenses LS51 and LS54, and the ZAF light-shielding film 16B is provided at a position overlapping with the right halves of the lenses LS52 and LS53. Therefore, the arrangement pitch of the ZAF light-shielding films 16 in the X-axis direction is equal to the arrangement pitch of the lenses L The arrangement pitch of the S is substantially the same.

[0103] [Effects of pixel array section 411] In the pixel array section 411 of the present embodiment, by disposing the ZAF light-shielding film 16 as described above, ZAF pixels capable of detecting image plane phase difference information are realized even when the device has a lens LS divided into multiple parts. Note that the pixel array section 411 of the present embodiment has the same configuration as a normal pixel except for the inclusion of the ZAF light-shielding film 16, and is therefore superior in terms of ease of manufacture. Furthermore, since the normal pixel has the same configuration as the first embodiment, an improvement in PLS can be obtained.

[0104] 7. Modification of the Fourth Embodiment 13A and 14B, the ZAF light-shielding film 16 is divided into multiple parts according to the arrangement pitch of the lenses LS for each sensor pixel PX, but the present disclosure is not limited to this. The present disclosure also includes other embodiments, for example, those shown in the following modified examples 4-1 to 4-5.

[0105] (Variation 4-1) FIG. 15A shows an example cross-sectional configuration of two sensor pixels PX1 and PX5 among the plurality of sensor pixels PX constituting a pixel array unit 411A as a first modification of the fourth embodiment. FIG. 15B shows an example cross-sectional configuration of two sensor pixels PX5 and PX6 among the plurality of sensor pixels PX constituting the pixel array unit 411A. Note that FIGS. 15A and 15B correspond to FIGS. 13A and 13B, respectively, in the fourth embodiment. Also, FIG. 16A shows a planar configuration at a height position Lv1 shown in FIGS. 15A and 15B, and FIG. 16B shows a planar configuration at a height position Lv3 shown in FIGS. 15A and 15B. Note that FIGS. 16A and 16B correspond to FIGS. 14A and 14B, respectively, in the fourth embodiment.

[0106] In the pixel array unit 411A of this modified example, two lenses LS are arranged for each sensor pixel PX, which are not divided in the X-axis direction along which image plane phase difference information is desired to be acquired, but are equally divided only in the Y-axis direction. For example, sensor pixel PX1 is provided with two horizontally elongated lenses LS11 and LS12 adjacent in the Y-axis direction. This allows the light-collecting points of the lenses LS11 and LS12 to be shifted in the Y-axis direction from the center position of the effective pixel region 1R1, thereby reducing PLS.

[0107] In sensor pixel PX5, which is a ZAF pixel, a ZAF light-shielding film 16 is provided to cover half of the effective pixel area 1R5. Since both of the two lenses LS51 and LS52 extend across the entire effective pixel area 1R5 in the X-axis direction, image plane phase difference information in the left-right direction can be obtained.

[0108] (Variation 4-2) FIG. 17A shows an example cross-sectional configuration of two sensor pixels PX1 and PX5 among the plurality of sensor pixels PX constituting a pixel array unit 411B as a second modified example of the fourth embodiment. FIG. 17B shows an example cross-sectional configuration of two sensor pixels PX1 and PX2 among the plurality of sensor pixels PX constituting the pixel array unit 411B. Note that FIGS. 17A and 17B correspond to FIGS. 13A and 13B, respectively, in the fourth embodiment. Also, FIG. 18A shows a planar configuration at a height position Lv1 shown in FIGS. 17A and 17B, and FIG. 18B shows a planar configuration at a height position Lv3 shown in FIGS. 17A and 17B. Note that FIGS. 18A and 18B correspond to FIGS. 14A and 14B, respectively, in the fourth embodiment.

[0109] In the pixel array section 411B as this modification, the portion of the element isolation section 12 that extends in the X-axis direction is not provided, and only the portion that extends in the Y-axis direction is left. The other configuration of the pixel array section 411B is substantially the same as the configuration of the pixel array section 411A as the first modification of the fourth embodiment.

[0110] The pixel array section 411B also provides the same effects as the pixel array section 411A as the first modified example of the fourth embodiment. Furthermore, it is possible to improve the oblique incidence characteristics for incident light incident at an incident angle tilted in the vertical direction.

[0111] (Variation 4-3) FIG. 19A shows an example cross-sectional configuration of two sensor pixels PX1 and PX5 among the plurality of sensor pixels PX constituting a pixel array unit 411C as a third modified example of the fourth embodiment. FIG. 19B shows an example cross-sectional configuration of two sensor pixels PX1 and PX2 among the plurality of sensor pixels PX constituting the pixel array unit 411C. Note that FIGS. 19A and 19B correspond to FIGS. 13A and 13B, respectively, in the fourth embodiment. Also, FIG. 20A shows a planar configuration at a height position Lv1 shown in FIGS. 19A and 19B, and FIG. 20B shows a planar configuration at a height position Lv3 shown in FIGS. 19A and 19B. Note that FIGS. 20A and 20B correspond to FIGS. 14A and 14B, respectively, in the fourth embodiment.

[0112] In the pixel array unit 411C as this modification, two lenses LS that are not divided in the Y-axis direction but are equally divided only in the X-axis direction are arranged only in the sensor pixel PX5. Specifically, as shown in FIG. 20A, the sensor pixel PX5 is provided with two vertically elongated lenses LS51 and LS52 adjacent in the X-axis direction. Furthermore, in the pixel array unit 411C, a ZAF light-shielding film 16 is provided in the sensor pixel PX5, which is a ZAF pixel, so as to cover half of the effective pixel region 1R5 in the Y-axis direction from which image plane phase difference information is desired to be acquired. The other configurations of the pixel array unit 411C are substantially the same as those of the pixel array unit 411B as the second modification of the fourth embodiment.

[0113] In the pixel array unit 411C, the two lenses LS51 and LS52 each extend across the entire effective pixel region 1R5 in the Y-axis direction, and therefore image plane phase difference information in the vertical direction can be obtained by the ZAF light-shielding film 16 that covers half of the effective pixel region 1R5 in the Y-axis direction. Furthermore, the pixel array unit 411C also provides the same effects as the pixel array unit 411B as the second modified example of the fourth embodiment.

[0114] (Variation 4-4) FIG. 21A shows an example cross-sectional configuration of two sensor pixels PX1 and PX5 among the plurality of sensor pixels PX constituting a pixel array unit 411D as a fourth modification of the fourth embodiment. FIG. 21B shows an example cross-sectional configuration of two sensor pixels PX1 and PX2 among the plurality of sensor pixels PX constituting the pixel array unit 411D. Note that FIGS. 21A and 21B correspond to FIGS. 13A and 13B, respectively, in the fourth embodiment. Also, FIG. 22A shows a planar configuration at a height position Lv1 shown in FIGS. 21A and 21B, and FIG. 22B shows a planar configuration at a height position Lv3 shown in FIGS. 21A and 21B. Note that FIGS. 22A and 22B correspond to FIGS. 14A and 14B, respectively, in the fourth embodiment.

[0115] In the pixel array unit 411D as this modification, one lens LS5 is provided in the effective pixel area 1R5 only in the sensor pixel PX5, which is a ZAF pixel. Except for this point, the configuration of the pixel array unit 411D is substantially the same as the configuration of the pixel array unit 411B as the second modification of the fourth embodiment.

[0116] The pixel array unit 411D also provides the same effects as the pixel array unit 411B as the second modified example of the fourth embodiment. However, since the sensor pixel PX5 as a ZAF pixel does not have multiple lenses LS, the effect of reducing PLS cannot be expected.

[0117] (Variation 4-5) FIG. 23A shows an example cross-sectional configuration of two sensor pixels PX1 and PX5 among the plurality of sensor pixels PX constituting a pixel array unit 411E as a fifth modified example of the fourth embodiment. FIG. 23B shows an example cross-sectional configuration of two sensor pixels PX1 and PX2 among the plurality of sensor pixels PX constituting the pixel array unit 411E. Note that FIGS. 23A and 23B correspond to FIGS. 13A and 13B, respectively, in the fourth embodiment. Also, FIG. 24A shows a planar configuration at a height position Lv1 shown in FIGS. 23A and 23B, and FIG. 24B shows a planar configuration at a height position Lv3 shown in FIGS. 23A and 23B. Note that FIGS. 24A and 24B correspond to FIGS. 14A and 14B, respectively, in the fourth embodiment.

[0118] In the pixel array unit 411E as this modification, one lens LS5 is provided in the effective pixel area 1R5 only in the sensor pixel PX5, which is a ZAF pixel. Except for this point, the configuration of the pixel array unit 411E is substantially the same as the configuration of the pixel array unit 411C as the third modification of the fourth embodiment.

[0119] The pixel array unit 411E also provides the same effects as the pixel array unit 411C as the third modified example of the fourth embodiment. However, since the sensor pixel PX5 as a ZAF pixel does not have multiple lenses LS, the effect of reducing PLS cannot be expected.

[0120] 8. Fifth Embodiment [Configuration of pixel array unit 511] Fig. 25 shows an example circuit configuration of two adjacent sensor pixels PX1 and PX2 among the multiple sensor pixels PX that constitute the pixel array unit 511 according to the fifth embodiment of the present disclosure. Also, Figs. 26A to 26G show example planar configurations of the sensor pixels PX1 and PX2, which correspond to the height positions Lv1, Lv3 to Lv8 shown in Figs. 3A and 3B, respectively.

[0121] In the pixel array unit 511, the photoelectric conversion unit PD in each sensor pixel PX is divided into two. That is, the sensor pixel PX1 has two sub-pixels PX1A and PX1B, and the sub-pixels PX1A and PX1B include the photoelectric conversion units PD1A and PD1B, respectively. Here, as shown in FIGS. 26B to 26D, the photoelectric conversion units PD1A and PD1B are arranged side by side in the X-axis direction (left and right direction). Also, as shown in FIG. 26A, the sensor pixel PX1 has two horizontally elongated lenses LS11 and LS12 that are equally divided in the Y-axis direction and arranged side by side. The sensor pixel PX2 has a similar configuration. That is, the sensor pixel PX2 has two sub-pixels PX2A and PX2B, and the sub-pixels PX2A and PX2B include the photoelectric conversion units PD2A and PD2B, respectively. Furthermore, as shown in FIG. 26A, in the sensor pixel PX2, two horizontally elongated lenses LS21 and LS22 that are equally divided in the Y-axis direction are arranged side by side.

[0122] The sub-pixels PX1A, PX1B, PX2A, and PX2B each have substantially the same circuit configuration as the sensor pixel PX1 described in the first embodiment. However, the power supply VDD, the charge-voltage converter FD, the reset transistor RST, the amplification transistor AMP, the selection transistor SEL, and the vertical signal line VSL are the same as those of the sub-pixels PX1A, PX1B, PX2A, and PX2B shares one each.

[0123] According to the pixel array unit 511 of this embodiment, the photoelectric conversion unit PD in one sensor pixel PX is divided into two, and independent signals can be obtained from each photoelectric conversion unit PD. This makes it possible to obtain image plane phase difference information. Furthermore, since multiple lenses LS are provided in one sensor pixel PX, a reduction in PLS can be expected, similar to the first embodiment.

[0124] <9. Application examples to electronic devices> FIG. 27 is a block diagram showing an example configuration of a camera 2000 as an electronic device to which the present technology is applied.

[0125] The camera 2000 includes an optical unit 2001 including a group of lenses, an imaging device (imaging device) 2002 to which the above-described solid-state imaging device 101 or the like (hereinafter referred to as the solid-state imaging device 101, etc.) is applied, and a DSP (Digital Signal Processor) circuit 2003, which is a camera signal processing circuit. The camera 2000 also includes a frame memory 2004, a display unit 2005, a recording unit 2006, an operation unit 2007, and a power supply unit 2008. The DSP circuit 2003, the frame memory 2004, the display unit 2005, the recording unit 2006, the operation unit 2007, and the power supply unit 2008 are connected to one another via a bus line 2009.

[0126] The optical unit 2001 takes in incident light (image light) from a subject and forms an image on the imaging surface of the imaging device 2002. The imaging device 2002 converts the amount of incident light formed on the imaging surface by the optical unit 2001 into an electrical signal on a pixel-by-pixel basis and outputs the signal as a pixel signal.

[0127] The display unit 2005 is formed of a panel display device such as a liquid crystal panel or an organic EL panel, and displays moving images or still images captured by the imaging device 2002. The recording unit 2006 records the moving images or still images captured by the imaging device 2002 on a recording medium such as a hard disk or semiconductor memory.

[0128] An operation unit 2007, under the operation of a user, issues operation commands for various functions of the camera 2000. A power supply unit 2008 appropriately supplies various types of power to the DSP circuit 2003, frame memory 2004, display unit 2005, recording unit 2006, and operation unit 2007 as operating power sources.

[0129] As described above, by using the solid-state imaging device 101 or the like as the imaging device 2002, it is possible to expect to obtain a good image.

[0130] <10. Mobile Application Examples> The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of moving body, such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, or a robot.

[0131] FIG. 28 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile object control system to which the technology according to the present disclosure can be applied.

[0132] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 28, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (Interface) 12053.

[0133] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, a braking device for generating a braking force of the vehicle, etc.

[0134] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches may be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0135] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture images outside the vehicle and receives the captured images. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for people, cars, obstacles, signs, characters on the road surface, etc., based on the received images.

[0136] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal according to the amount of light received. The imaging unit 12031 can output the electrical signal as an image, or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0137] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0138] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drivetrain control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including avoiding or mitigating collisions between vehicles, following based on the distance between vehicles, maintaining vehicle speed, warning of vehicle collisions, or warning of vehicle lane departure.

[0139] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0140] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information about the outside of the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control for the purpose of preventing glare, such as switching from high beams to low beams.

[0141] The audio / video output unit 12052 transmits at least one of audio and video output signals to an output device capable of visually or audibly notifying information to vehicle occupants or the outside of the vehicle. In the example of Fig. 36, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as output devices. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0142] FIG. 29 is a diagram showing an example of the installation position of the imaging unit 12031.

[0143] In FIG. 29, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0144] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided at the front nose and the imaging unit 12105 provided at the top of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided at the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided at the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 provided at the top of the windshield inside the vehicle cabin is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.

[0145] 29 shows an example of the imaging ranges of the imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, by overlaying the image data captured by the imaging units 12101 to 12104, a bird's-eye view image of the vehicle 12100 viewed from above can be obtained.

[0146] At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera made up of multiple imaging elements, or may be an imaging element having pixels for phase difference detection.

[0147] For example, the microcomputer 12051 can calculate the distance to each three-dimensional object within the imaging ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100) based on the distance information obtained from the imaging units 12101 to 12104, thereby extracting as a preceding vehicle, in particular, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (for example, 0 km / h or higher). Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of automatic driving, which runs autonomously without relying on driver operation.

[0148] For example, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines the collision risk, which indicates the degree of risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drivetrain control unit 12010.

[0149] At least one of the image capturing units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the images captured by the image capturing units 12101 to 12104. The pedestrian recognition is performed, for example, by extracting feature points from the images captured by the image capturing units 12101 to 12104, which are infrared cameras, and then performing pattern matching on a series of feature points that indicate the outline of an object to determine whether or not the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the image capturing units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular outline on the recognized pedestrian for emphasis. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating the pedestrian at a desired position.

[0150] An example of a vehicle control system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to the imaging unit 12031 of the above-described configuration. Specifically, the solid-state imaging device 101 shown in FIG. 1A or the like can be applied to the imaging unit 12031. By applying the technology according to the present disclosure to the imaging unit 12031, excellent operation of the vehicle control system can be expected.

[0151] <11. Other Modifications> Although the present disclosure has been described above with reference to several embodiments and modifications, the present disclosure is not limited to the above-described embodiments, etc., and various modifications are possible. For example, the present disclosure is not limited to back-illuminated image sensors, but can also be applied to front-illuminated image sensors.

[0152] Furthermore, the imaging device of the present disclosure is not limited to an imaging device that detects the light intensity distribution of visible light and acquires it as an image, but may also be an imaging device that acquires the distribution of incident amounts of infrared rays, X-rays, particles, etc. as an image.

[0153] The imaging device according to the present disclosure may be in the form of a module in which the imaging section and the signal processing section or the optical system are packaged together.

[0154] Furthermore, in the above embodiments and the like, a memory-retention type global shutter back-illuminated image sensor has been described, but the present disclosure is not limited to this. For example, a back-illuminated image sensor of an FD-retention type global shutter type that retains charge in a charge-voltage conversion unit rather than in a charge retention unit may be used.

[0155] Furthermore, the solid-state imaging device of the technique of the present disclosure may have a configuration such as the solid-state imaging device 101A shown in Fig. 30A or the solid-state imaging device 101B shown in Fig. 30B. Fig. 30A is a block diagram showing an example configuration of the solid-state imaging device 101A as a first modified example of the present disclosure. Fig. 30B is a block diagram showing an example configuration of the solid-state imaging device 101B as a second modified example of the present disclosure.

[0156] In the solid-state imaging device 101A of Figure 30A, a data storage unit 119 is arranged between the column signal processing unit 113 and the horizontal driving unit 114, and the pixel signal output from the column signal processing unit 113 is supplied to the signal processing unit 118 via the data storage unit 119.

[0157] 30B, a data storage unit 119 and a signal processing unit 118 are arranged in parallel between a column signal processing unit 113 and a horizontal drive unit 114. In the solid-state imaging device 101B, the column signal processing unit 113 performs A / D conversion to convert analog pixel signals into digital pixel signals for each column of the pixel array unit 111 or for each set of multiple columns of the pixel array unit 111.

[0158] In the above-described embodiments, the sensor pixels PX1 to PX8 are uniformly and repeatedly arranged throughout the pixel array unit 111. However, the present disclosure is not limited to this arrangement. For example, as shown in FIG. 31 , the lens LS arrangement pattern can be arbitrarily set according to the position of the pixel array unit 111. For example, as shown in FIG. 31 , multiple lenses LS are arranged per sensor pixel PX in the central region CR of the pixel array unit 111, and one lens LS is arranged per sensor pixel PX in the peripheral region PR. Since the sensitivity to obliquely incident light is likely to be lower in the peripheral region PR than in the central region CR, arranging one lens LS per sensor pixel PX in the peripheral region PR as shown in FIG. 31 is advantageous for improving oblique incident characteristics. However, FIG. 31 merely illustrates one example of the lens LS arrangement pattern, and the present disclosure is not limited to this arrangement. For example, the size of the lens LS may be gradually or continuously increased from the outer edge of the central region CR toward the outer edge of the peripheral region PR.

[0159] Furthermore, in the present disclosure, various aspects described in the above embodiments and modifications may be arbitrarily combined. For example, a pixel array unit 611 shown in FIGS. 32A and 32B may be realized by combining the configuration of a pixel array unit 411B as a second modification of the fourth embodiment with the configuration of a pixel array unit 411C as a third modification of the fourth embodiment. In the pixel array unit 611, sensor pixel PX5 is a ZAF pixel for obtaining image plane phase difference information in the horizontal direction, and sensor pixel PX7 is a ZAF pixel for obtaining image plane phase difference information in the vertical direction. Sensor pixel PX5 includes lenses LS51 and LS52 that are vertically divided in the effective pixel region 1R5. Sensor pixel PX7 includes lenses LS71 and LS72 that are horizontally divided in the effective pixel region 1R7.

[0160] In an imaging device and an electronic device according to an embodiment of the present disclosure, the focusing optical system focuses incident light at a position in the effective pixel area where the focusing optical system overlaps with the first light-shielding film in the thickness direction, thereby improving the PLS characteristics and achieving further improvements in imaging performance.

[0161] In addition, the Si{111} substrate in this disclosure refers to a substrate or wafer made of silicon single crystal and having a crystal plane represented by {111} in Miller indices. The Si{111} substrate in this disclosure also includes substrates or wafers whose crystal orientation is shifted by several degrees, for example, shifted by several degrees from the {111} plane toward the nearest

[0110] direction. Furthermore, it also includes substrates or wafers in which silicon single crystal is grown on a part or the entire surface of such substrates or wafers by epitaxial method or the like. include.

[0162] In the present disclosure, the {111} plane is a collective term for the (111) plane, (-111) plane, (1-11) plane, (11-1) plane, (-1-11) plane, (-11-1) plane, (1-1-1) plane, and (-1-1-1) plane, which are symmetry-equivalent crystal planes. Therefore, the term "Si{111} substrate" in the present disclosure may be read as, for example, "Si(1-11) substrate." Here, the bar symbol used to indicate negative Miller indices is replaced with a minus symbol.

[0163] Also, in the description of the present invention <110> The direction is a general term for the

[0110] direction,

[0101] direction,

[0011] direction, [-110] direction, [-101] direction, [10-1] direction, [0-11] direction, [01-1] direction, [-1-10] direction, [-10-1] direction, and [0-1-1] direction, which are crystal plane directions equivalent to each other in terms of symmetry, and may be interpreted as any one of them. However, in the present disclosure, etching is performed in a direction perpendicular to the element formation surface and in a direction further perpendicular to the direction perpendicular to the element formation surface (i.e., a direction parallel to the element formation surface).

[0164] Table 1 shows the {111} plane, which is the crystal plane of the Si{111} substrate in the present invention. <110> This shows specific combinations of planes and orientations that will allow etching in the direction.

[0165] [Table 1]

[0166] As shown in Table 1, the {111} plane and <110> There are 96 (=8×12) combinations of directions. <110> The etching direction is limited to a direction perpendicular to the {111} plane, which is the device formation surface, and a direction parallel to the device formation surface. In other words, the combination of the device formation surface of the Si{111} substrate of the present disclosure and the etching direction of the Si{111} substrate is selected from any of the combinations indicated by ○ in Table 1.

[0167] In the first embodiment, a Si{111} substrate is used, and etching proceeds in the X-axis direction, but does not proceed in the Y-axis or Z-axis directions. However, the present disclosure is not limited to this, and etching may proceed in both the X-axis and Y-axis directions, or in either the X-axis or Y-axis direction. In addition, as shown in FIG. 33, for example, the Si{111} substrate may have a substrate surface with a crystalline silicon. <112> This also includes substrates that have been processed to have an off-angle relative to the direction. When the off-angle is 19.47° or less, even in the case of a substrate with an off-angle, <111> With respect to the etching rate in the direction, i.e., the direction with three Si back bonds, <110> The relationship that the etching rate in the direction, i.e., the direction having one Si back bond, is sufficiently high is maintained. As the off angle becomes larger, the number of steps increases and the density of micro-steps increases, so it is preferable that it is 5° or less. In the example of Figure 33, the substrate surface <112> We have mentioned cases where the direction is off-axis. <110> It does not matter if there is an off-angle in the direction, and the direction of the off-angle does not matter. In addition, the Si plane orientation can be analyzed using X-ray diffraction, electron diffraction, electron backscatter diffraction, etc. The number of Si backbonds is determined by the Si crystal structure, so by analyzing the Si plane orientation, the number of backbonds can also be analyzed.

[0168] It should be noted that the effects described in this specification are merely examples and are not limited to those described, and other effects may also be achieved. Furthermore, the present technology may have the following configurations. (1) In an effective pixel area extending along the first surface, a focusing optical system that focuses incident light; a photoelectric conversion unit capable of generating, by photoelectric conversion, charges corresponding to the amount of light incident on the light passing through the light collecting optical system; a charge holding unit capable of holding the charges transferred from the photoelectric conversion unit; a first light-shielding film that is provided between the photoelectric conversion unit and the charge storage unit in a thickness direction perpendicular to the first surface and that blocks the incident light; and The light-collecting optical system is configured to collect the incident light at a position in the effective pixel area where the light-collecting optical system overlaps with the first light-shielding film in the thickness direction. Imaging device. (2) The light-collecting optical system is configured to collect light at a position other than the center position in the effective pixel area. The imaging device according to (1) above. (3) The first light-shielding film includes a first opening at a position other than the center position in the effective pixel area. The imaging device according to (1) or (2) above. (4) a second light-shielding film that is provided so as to overlap the first light-shielding film in the thickness direction, includes a second opening at a position different from the first opening in the effective pixel region, and prevents the incident light from entering the charge storage portion; The imaging device according to (3) above. (5) the focusing optical system includes a first optical system and a second optical system aligned along the first surface, the first optical system collects the incident light so that the incident light is directed toward a first light collection point in the effective pixel area; The second optical system focuses the incident light toward a second focusing point in the effective pixel area. The imaging device according to any one of (1) to (4) above. (6) the first optical system includes a first lens; The second optical system includes a second lens that is smaller than the first lens. The imaging device according to (5) above. (7) the focusing optical system includes first to fourth optical systems arranged in a matrix along the first surface, The first to fourth optical systems respectively focus the incident light toward first to fourth focusing points in the effective pixel area. The imaging device according to any one of (1) to (6) above. (8) The focusing optical system includes a first lens layer and a second lens layer stacked in the thickness direction. The imaging device according to any one of (1) to (7) above. (9) the photoelectric conversion unit includes a first photoelectric conversion element and a second first photoelectric conversion element arranged in a first direction along the first surface, the focusing optical system includes a first optical system and a second optical system that are aligned in a second direction perpendicular to the first direction and along the first surface, the first optical system collects the incident light so that the incident light is directed toward a first light collection point in the effective pixel area; The second optical system focuses the incident light toward a second focusing point in the effective pixel area. The imaging device according to any one of (1) to (8) above. (10) A first pixel and a second pixel are provided, The first pixel is In an effective pixel area extending along the first surface, a focusing optical system that focuses incident light; a photoelectric conversion unit capable of generating, by photoelectric conversion, charges corresponding to the amount of light incident on the light passing through the light collecting optical system; a charge holding unit capable of holding the charges transferred from the photoelectric conversion unit; a first light-shielding film that is provided between the photoelectric conversion unit and the charge storage unit in a thickness direction perpendicular to the first surface and that blocks the incident light; and the light-collecting optical system is configured to collect the incident light at a position in the effective pixel area where the light-collecting optical system overlaps with the first light-shielding film in the thickness direction, The second pixel is an image plane phase difference detection pixel. Imaging device. (11) Further comprising a third pixel, the second pixel is a first image surface phase difference detection pixel including a first lens and a second lens divided in a first direction in the effective pixel area, The third pixel is a second image plane phase difference detection pixel including a third lens and a fourth lens divided in a second direction perpendicular to the first direction in the effective pixel area. The imaging device according to (10) above. (12) The first pixel is a global shutter pixel. The imaging device according to (10) or (11) above. (13) An electronic device equipped with an imaging device, The imaging device is In an effective pixel area extending along the first surface, a focusing optical system that focuses incident light; a photoelectric conversion unit capable of generating, by photoelectric conversion, charges corresponding to the amount of light incident on the light passing through the light collecting optical system; a charge holding unit capable of holding the charges transferred from the photoelectric conversion unit; a light-shielding film that is provided between the photoelectric conversion unit and the charge storage unit in a thickness direction orthogonal to the first surface and that blocks the incident light; and The light-collecting optical system is configured to collect the incident light at a position in the effective pixel area where the light-collecting optical system overlaps with the light-shielding film in the thickness direction. electronic equipment.

[0169] This application claims priority based on Japanese Patent Application No. 2019-225188, filed on December 13, 2019, in the Japan Patent Office, the entire contents of which are incorporated herein by reference.

[0170] Those skilled in the art will recognize that various modifications, combinations, subcombinations, and variations may occur depending on design requirements and other factors, and are intended to be within the scope of the appended claims and their equivalents.

Claims

1. In an effective pixel area extending along the first surface, a focusing optical system that focuses incident light; a photoelectric conversion unit capable of generating, by photoelectric conversion, charges corresponding to the amount of light of the incident light passing through the light collecting optical system; a charge holding unit capable of holding the charge transferred from the photoelectric conversion unit; a first light-shielding film that is provided between the photoelectric conversion unit and the charge retention unit in a thickness direction perpendicular to the first surface and that blocks the incident light; a second light-shielding film that is provided so as to overlap the first light-shielding film in the thickness direction and that prevents the incident light from entering the charge retention portion; having the light collecting optical system collects the incident light at a position in the effective pixel area where the light collecting optical system overlaps with the first light blocking film in the thickness direction, the first light-shielding film includes a first opening at a position other than a central position in the effective pixel area, The second light-shielding film includes a second opening at a position different from the first opening in the effective pixel region. Imaging device.

2. The light collecting optical system is adapted to collect light at a position other than the center position in the effective pixel area. The imaging device according to claim 1.

3. the focusing optical system includes a first optical system and a second optical system aligned along the first surface, the first optical system collects the incident light so as to travel toward a first light collecting point in the effective pixel area; The second optical system collects the incident light so as to travel toward a second light collecting point in the effective pixel area. The imaging device according to claim 1.

4. the first optical system includes a first lens; The second optical system includes a second lens that is smaller than the first lens. The imaging device according to claim 3.

5. the light-collecting optical system includes first to fourth optical systems arranged in a matrix along the first surface, The first to fourth optical systems respectively collect the incident light so as to direct the incident light toward first to fourth light collecting points in the effective pixel area. The imaging device according to claim 1.

6. The focusing optical system includes a first lens layer and a second lens layer stacked in the thickness direction. The imaging device according to claim 1.

7. the photoelectric conversion unit includes a first photoelectric conversion element and a second photoelectric conversion element arranged in a first direction along the first surface, the focusing optical system includes a first optical system and a second optical system aligned in a second direction perpendicular to the first direction and along the first surface; the first optical system collects the incident light so as to travel toward a first light collecting point in the effective pixel area; The second optical system collects the incident light so as to travel toward a second light collecting point in the effective pixel area. The imaging device according to claim 1.

8. In an effective pixel area extending along a first surface, a focusing optical system that focuses incident light; a photoelectric conversion unit capable of generating, by photoelectric conversion, charges corresponding to the amount of light of the incident light passing through the light collecting optical system; a charge holding unit capable of holding the charge transferred from the photoelectric conversion unit; a first light-shielding film that is provided between the photoelectric conversion unit and the charge storage unit in a thickness direction perpendicular to the first surface and that blocks the incident light; having the light collecting optical system collects the incident light at a position in the effective pixel area where the light collecting optical system overlaps with the first light blocking film in the thickness direction, the focusing optical system includes a first optical system and a second optical system aligned along the first surface, the first optical system includes a first lens; the second optical system includes a second lens smaller than the first lens; the first optical system collects the incident light so as to travel toward a first light collecting point in the effective pixel area; The second optical system collects the incident light so as to travel toward a second light collecting point in the effective pixel area. Imaging device.

9. A first pixel and a second pixel, The first pixel is In an effective pixel area extending along the first surface, a focusing optical system that focuses incident light; a photoelectric conversion unit capable of generating, by photoelectric conversion, charges corresponding to the amount of light of the incident light passing through the light collecting optical system; a charge holding unit capable of holding the charge transferred from the photoelectric conversion unit; a first light-shielding film that is provided between the photoelectric conversion unit and the charge retention unit in a thickness direction perpendicular to the first surface and that blocks the incident light; a second light-shielding film that is provided so as to overlap the first light-shielding film in the thickness direction and that prevents the incident light from entering the charge retention portion; having the light collecting optical system collects the incident light at a position in the effective pixel area where the light collecting optical system overlaps with the first light blocking film in the thickness direction, the first light-shielding film includes a first opening at a position other than a central position in the effective pixel area, the second light-shielding film includes a second opening at a position different from the first opening in the effective pixel region; The second pixel is an image plane phase difference detection pixel. Imaging device.

10. Further comprising a third pixel, the second pixel is a first image surface phase difference detection pixel including a first lens and a second lens that are divided in a first direction in the effective pixel area, The third pixel is a second image surface phase difference detection pixel including a third lens and a fourth lens that are divided in a second direction perpendicular to the first direction in the effective pixel area.

10. The imaging device according to claim 9.

11. The first pixel is a global shutter pixel.

10. The imaging device according to claim 9.

12. An electronic device including an imaging device, The imaging device includes: In an effective pixel area extending along the first surface, a focusing optical system that focuses incident light; a photoelectric conversion unit capable of generating, by photoelectric conversion, charges corresponding to the amount of light of the incident light passing through the light collecting optical system; a charge holding unit capable of holding the charge transferred from the photoelectric conversion unit; a first light-shielding film that is provided between the photoelectric conversion unit and the charge retention unit in a thickness direction perpendicular to the first surface and that blocks the incident light; a second light-shielding film that is provided so as to overlap the first light-shielding film in the thickness direction and that prevents the incident light from entering the charge retention portion; having the light collecting optical system collects the incident light at a position in the effective pixel area where the light collecting optical system overlaps with the first light blocking film in the thickness direction, the first light-shielding film includes a first opening at a position other than a central position in the effective pixel area, The second light-shielding film includes a second opening at a position different from the first opening in the effective pixel region. electronic equipment.

Images