Positive photoresist formulations using crosslinkable siloxane compounds

Abstract

The present invention relates to novel positive photoresist formulations that include a crosslinkable siloxane polymer. The siloxane polymer used in the positive photoresist formulation is crosslinkable and includes a first repeat unit that includes at least one maleimide group and a second repeat unit that does not include a maleimide group. The present invention also provides a method for producing a microelectronic structure using the positive photoresist formulation according to the present invention, and an electronic device that includes a microelectronic structure that is obtained or obtainable by the method.

Description

[Technical field]

[0001] The present invention relates to novel positive photoresist formulations that involve the use of crosslinkable siloxane polymers. The siloxane polymers used in the positive photoresist formulations are crosslinkable and comprise a first repeat unit that comprises at least one maleimide group and a second repeat unit that does not comprise a maleimide group.

[0002] Positive photoresist formulations are particularly suitable for preparing dielectric materials that are photopatternable and have excellent barrier, passivation, and / or planarization properties. The photoresist formulations can be used for various applications in the electronics industry where insulating, protective, or barrier materials in the form of layers, films, or coatings are required, such as for electronic packaging or for preparing field effect transistors (FETs) or thin film transistors (TFTs) for electronic devices. The dielectric materials can form barrier coatings, passivation layers, planarization layers, or combination passivation and planarization layers on conductive or semiconductive structures, such as FETs or TFTs. Furthermore, such materials can be used to prepare substrates for printed circuit boards. The photoresist formulations can be cured under low temperature thermal conditions or only by application of UV radiation. The cured dielectric material obtained from the positive photoresist formulation exhibits excellent film-forming ability, excellent thermal properties, excellent mechanical properties, and easy handling and processing from conventional solvents.In addition, the obtained material is characterized by low dielectric constant and low coefficient of thermal expansion (CTE).The relationship between stiffness and elasticity of the material is favorable and well-balanced, so that it can easily offset the thermal stress that may occur during the operation of electronic devices. The present invention further provides a method for the manufacture of a microelectronic structure using a positive photoresist formulation according to the invention, and an electronic device comprising a microelectronic structure obtained or obtainable by said method. [Background technology]

[0003] In the electronics industry, various materials have been described for preparing dielectric materials. For example, US Patent Application Publication No. 2012 / 0056249 relates to polycycloolefins based on norbornene-type polymers, which are used to prepare dielectric interlayers applied to fluoropolymer layers of electronic devices. WO 2017 / 144148 provides a positive-type photosensitive siloxane composition capable of forming a cured film such as a planarizing film or an intermediate layer insulating film for a TFT substrate. The positive-type photosensitive siloxane composition includes (I) a polysiloxane having a substituted or unsubstituted phenyl group, (II) a diazonaphthoquinone derivative, (III) a hydrate or solvate of a photobase generator, and (IV) a solvent. US Patent Application Publication No. 2013 / 0099228 relates to a passivation layer solution composition comprising an organosiloxane resin represented by: [ka] wherein R is at least one substituent selected from saturated or unsaturated hydrocarbons having 1 to about 25 carbon atoms, x and y may each independently be 1 to about 200, and each asterisk indicates a bond to an H atom or to an x ​​siloxane unit or to a y siloxane unit, or to an x ​​siloxane unit or to a y siloxane unit of another siloxane chain containing x siloxane units or y siloxane units or combinations thereof. The passivation layer solution composition is used to prepare a passivation layer on an oxide semiconductor of a thin film transistor (TFT) array panel.

[0004] The passivation layer of an oxide semiconductor should be a layer that suppresses the permeation of moisture, hydrogen, oxygen, etc. The penetration of such impurities significantly changes the electrical conductivity of the oxide semiconductor, impairs the operational stability, and leads to threshold fluctuations, etc. x , SiON xPassivation layers suitable for TFT applications, such as SiNx or SiNx, are mainly applied by chemical vapor deposition (CVD) or physical vapor deposition (PVD). Such deposition techniques have the problem of being harmful to the oxide semiconductor layer. Furthermore, in the production of oxide semiconductor devices, there is a concern that the oxide semiconductor may be further degraded by various chemicals or processes such as dry etching. Therefore, a protective film such as an etching stopper may be applied as a protection from this process. Therefore, to overcome such drawbacks, a liquid protective film has been proposed that is coated on the substrate by a wet coating method (JP 2015-146332 A). Additionally, US 2007 / 0205399 relates to functionalized cyclic siloxanes useful as heat curable adhesive resins for the electronic packaging industry. US 2011 / 0319582 relates to curable compositions comprising reaction products obtained by reacting alkoxysilane compounds and inorganic oxide microparticles in the presence of water and organic solvents. As is evident from the above, organopolysiloxanes are a very interesting class of compounds due to their thermal stability and mechanical hardness, and are used in a variety of different applications, for example to form cured films with high heat resistance, transparency, and resolution. Organopolysiloxanes with methyl and / or phenyl side groups are used as dielectric materials in the electronics industry (mainly front-end of line (FEOL)) which requires thermally stable materials. Such materials must withstand temperatures up to 600°C. However, known materials are too rigid and brittle to be used in back-end of line (BEOL) applications, i.e. as redistribution layers, stress relief layers, or passivation layers, where the temperature requirements are somewhat lower (250-300°C), but where mechanical properties such as elongation and thermal expansion become increasingly more important.

[0005] Flexible material systems are required to prevent device cracking and coating delamination. Typically, such material systems are modified and configured for specific application requirements, with complex blending concepts, currently more than 10 different compounds, to tailor desired mechanical, thermal, and / or electrical properties. Advantageously, organopolysiloxane-type polymers can be tailored to overcome possible shortcomings such as poor adhesion, poor elongation, or high thermal expansion / contraction, and complex multi-component solutions can be avoided. Thus, there is a continuing need for the development of new compounds that can be used as dielectric or barrier coating materials for various applications in the electronics industry, such as, for example, for packaging microelectronic devices or for preparing field effect transistors (FETs) or thin film transistors (TFTs).

[0006] Objective of the invention The present invention has been achieved in view of the above background, and aims to provide a positive photosensitive photoresist formulation that can form a pattern of a dielectric material that does not emit harmful volatile substances such as benzene, has high resolution, high heat resistance, low dielectric constant, good adhesion to multiple surfaces, and is highly flexible and has a low coefficient of thermal expansion to prevent warping and delamination of the substrate upon heating and cooling. In the manufacturing process of photopatterned passivation layers, a deposited layer of a dielectric material precursor must undergo various method steps as shown in Figure 1. The problem that arises is the need to use multiple additives to arrive at a formulation that allows sufficient and good patterning. The formulation must meet certain criteria, such as being applicable by spin coating, being suitable for forming a uniform coating on the wafer, being sensitive to UV light, being developable in aqueous solutions, e.g. TMAH / H2O, and being able to form stable patterns without cracking at temperatures up to 230°C.

[0007] It has been found that standard siloxane coatings do not meet the above criteria. Therefore, additives need to be blended into the photoresist composition to increase its performance or even make it work as required. Furthermore, standard siloxane photoresist formulations exhibit dramatic flowability when heated in a post-bake step, which can lead to poor or even loss of patterns on the substrate. Therefore, additives such as photoacid generators (PAGs) are added to overcome this defect. Some of the materials obtained from photoresist formulations known in the state of the art are very brittle and therefore have very low crack thresholds, making it difficult to withstand temperatures above 200° C. and cast uniform films with thicknesses above about 2 μm. Another problem is the solubility of additives in common solvents and polysiloxanes. Some additives, such as PAGs or photoactive compounds, need to be completely dissolved to prevent film inhomogeneity or particle formation. All these problems must be reduced to a minimum to achieve suitable performance of electronic devices. Currently, known photoresist formulations consist of up to 20 different components to meet all requirements. However, such complex mixtures can adversely affect the performance of electronic devices, making it very difficult to further optimize a formulation that performs well. The use of additives further increases the cost of the formulation and complicates reproducibility. Therefore, the object of the present invention is to provide a new positive photoresist formulation that overcomes the drawbacks of the prior art and allows the preparation of dielectric materials with excellent barrier, passivation and / or planarization properties that can be used for various applications in the electronics industry. A preferred application is, for example, electronic packaging or the preparation of FET or TFT devices. The dielectric materials can be used to structure the redistribution layer (RDL) of packaged microelectronic devices, or to form barrier coatings, passivation layers, planarization layers, or combined passivation and planarization layers on conductive or semiconductive structures.

[0008] A further object is to provide new positive photoresist formulations for preparing dielectric materials that exhibit excellent film forming capabilities, excellent photosensitivity and photopatternability, excellent thermal properties, e.g., low coefficient of thermal expansion, and excellent mechanical properties, e.g., excellent flexibility and adhesion, when used, for example, to form passivation layers in packaged electronic devices. A further object is to provide new photoresist formulations that can be produced at low cost and allow easy handling and processing from conventional solvents. Moreover, it is an object of the present invention to provide a method for producing a microelectronic structure using the above-mentioned positive photoresist formulation, and to provide an electronic device containing the above-mentioned microelectronic structure. Summary of the Invention

[0009] The inventors have surprisingly found that the above objectives can be achieved by (a) a siloxane polymer comprising a first repeat unit and a second repeat unit; and (b) Photoactive Dissolution Modifiers A positive photoresist formulation comprising: It has been found that this is achieved by a positive photoresist formulation, in which a first repeat unit contains at least one maleimide group and a second repeat unit does not contain any maleimide groups.

[0010] The positive photoresist formulations according to the present invention exhibit excellent performance even without the addition of photoacid generators (PAGs), enabling cost-effective and reliable microelectronic device manufacturing.

[0011] 1. A method for manufacturing a microelectronic structure, comprising: (1) applying a positive photoresist formulation according to the present invention to the surface of a substrate; (2) photopatterning the positive photoresist formulation applied in step (1) to obtain a photopatterned structure; and (3) curing the photopatterned structure obtained in step (2) to obtain a cured photopatterned dielectric material on the surface of the substrate. Further provided is a method comprising:

[0012] Finally, there is provided an electronic device comprising a microelectronic structure obtainable or obtainable by the manufacturing method according to the invention. Preferred embodiments of the invention are set out below and in the dependent claims. [Brief description of the drawings]

[0013] [Figure 1] Figure 1 shows the fabrication process for preparing photopatterned passivation layer. Step (I): polysiloxane coating, spin / slit coating, pre-bake at 100 °C for 90 s; Step (II): exposure, photopatterning, UV light (g, h, i-line), 50-300 mJ / cm2; Step (III) development, 2.38% TMAH / water, rinse with deionized water; Step (IV) flood exposure, UV light (g, h, i-line), 200-600 mJ / cm2, bleaching; Step (V) post-bake, heat at 230 °C for 90 min. [Figure 2a] Photopatterning of the photoresist formulation of Reference Example 100. Left: after development. Right: after post-bake. [Figure 2b] Figure 1 shows photopatterning of the photoresist formulation of Example 101. Left: after development. Right: after post-bake. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014] Electronic Packaging As semiconductor transistors began to replace vacuum tube technology, it became possible to mount electronic components such as resistors, capacitors, and diodes directly onto the card's printed circuit board with wire leads, thus establishing the basic building blocks or levels of packaging that are still in use today. Complex electronic functions often require many more individual components than can be interconnected on a single printed circuit card. Multi-layer cards became possible with the development of three-dimensional packaging of daughter cards onto multi-layer motherboards. Integrated circuits allow many of the individual circuit elements, such as resistors and diodes, to be embedded into individual, relatively small components known as integrated circuit chips or dies. However, despite the incredible circuit integration, more than one packaging level is typically required, in part due to the technology of the integrated circuit itself. Integrated circuit chips are very fragile and have extremely small terminals. The first level of packaging accomplishes the primary functions of providing mechanical protection, cooling, and electrical connection capability to the delicate integrated circuit. Some components (high power resistors, mechanical switches, capacitors) are not easily integrated onto the chip, so at least one additional packaging level, such as a printed circuit card, is used. For highly complex applications such as mainframe computers, a hierarchy of multiple packaging levels is required. As a consequence of Moore's Law, advanced electronic packaging strategies play an increasingly important role in the development of more powerful electronic products. In other words, as the demand for smaller, faster, and more functional mobile and portable electronic devices increases, so does the demand for improved cost-effective packaging techniques. A wide variety of advanced packaging techniques exist to meet the requirements of today's semiconductor industry. The most advanced packaging techniques, wafer level packaging (WLP), fan-out wafer level packaging (FOWLP), 2.5D interposer, chip-on-chip stacking, package-on-package stacking, and embedded IC, all require structuring of other components such as thin substrates, redistribution layers, and high-resolution interconnects. End-user markets are constantly demanding lower prices and higher functionality for ever smaller and thinner devices. This is driving the need for next-generation packaging that exhibits finer features and improved reliability at competitive manufacturing costs.

[0015] Wafer-level packaging (WLP) is a technology that packages integrated circuits while they are still part of the wafer, as opposed to the more conventional chip-scale packaging method, where the wafer is sliced ​​into individual circuits (dies) and then packaged. WLP offers several key advantages over chip-scale packaging technologies, and is essentially a true chip-scale package (CSP) technology since the resulting package is practically the same size as the die. Wafer-level packaging allows for the integration of wafer fabrication, packaging, inspection, and burn-in test at the wafer level to streamline the manufacturing process that a device undergoes, starting from silicon to customer shipment. The primary application area for WLP is smartphones and wearables due to size constraints. The features that WLP provides to smartphones or wearables include compass, sensors, power management, wireless, etc. Wafer-level chip-scale packaging (WL-CSP) is one of the smallest packages currently commercially available. WLP can be categorized as fan-in WLP and fan-out WLP, both of which use rewiring techniques to form the connections between the chips and the solder balls.

[0016] Fan-out Wafer Level Packaging (FOWLP) is one of the latest packaging trends for microelectronics. FOWLP has the potential for high miniaturization in both package volume as well as package thickness. The technological basis of FOWLP is a reconstituted coated wafer with embedded chips and thin-film redistribution layers that together form a surface mounted device (SMD) compatible package. The main advantages of FOWLP are that it is a substrateless package, hence very thin, low thermal resistance, and good high frequency characteristics due to short and planar electrical connections together, e.g. with bumpless chip connections instead of wire bonds or solder joints. With current materials, the WLP process is limited to medium chip size applications. The reason for this limitation is mainly due to the current material selection, which shows thermal mismatch with the silicon die and thus may reduce performance and generate stress on the die. There is a high demand for new materials with better mechanical properties, especially a coefficient of thermal expansion (CTE) closer to that of silicon. Currently, the redistribution layer (RDL) is fabricated with a copper layer that is electroplated onto a polymer passivation layer such as polyimide (PI), butylcyclobutane (BCB), or polybenzoxazole (PBO). Low curing temperature along with photopatternability are two further important requirements for such materials.

[0017] Thin-film transistor (TFT) A thin film transistor (TFT) array panel is typically used as a circuit board for independently driving pixels of liquid crystal, electrophoretic particle / liquid, organic electroluminescent (EL) display devices, quantum dot electroluminescent, and light emitting diodes. The TFT array panel includes scan lines or gate lines for transmitting scanning signals, image signal lines or data lines for transmitting image signals, thin film transistors connected to the gate lines and data lines, and pixel electrodes connected to the thin film transistors. The TFT includes a gate electrode that is a part of the gate wire, a semiconductor layer that forms a channel, a source electrode that is a part of the data wire, and a drain electrode. For oxide-based TFTs, the oxide semiconductor layer may include indium oxide, zinc oxide, and gallium oxide, but may also include some other oxides as long as they exhibit semiconductor properties. The TFT is a switching element that controls an image signal transmitted to the pixel electrode via the data wire according to the scan signal transmitted via the gate line.

[0018] Two methods are currently used to deposit silicon nitride / silicon oxide layers onto silicon or oxide semiconductor substrates: Low Pressure Chemical Vapor Deposition (LPCVD) techniques, operating at fairly high temperatures and carried out in either vertical or horizontal tube furnaces; or · Plasma-enhanced chemical vapor deposition (PECVD) technology that operates at very low temperatures and under reduced pressure conditions. It has been found that LPCVD-produced SiNx films with a thickness of 200 nm or more tend to crack easily under pressure and temperature changes. The processing temperature is too high to be applied to glass substrates and hydrogenated amorphous silicon or oxide semiconductors. SiN produced by PECVD x Although the film has low tensile stress, the glass substrate still bends as the size of the substrate increases. x The films have poorer electrical properties, and plasma can also damage thin-film transistors, especially oxide semiconductors, degrading TFT performance. The photostructuring of the SiN layer involves photoresist coating, photopatterning, SiN x Many steps are required, such as etching, photoresist stripping, cleaning, etc. These procedures are time-consuming and expensive, so new types of materials are needed to passivate the semiconductor layers of the TFTs that form part of the TFT array panel.

[0019] definition The term "polymer" includes homopolymers, copolymers, such as block, random, and alternating copolymers, terpolymers, quaterpolymers, etc., as well as blends and modifications thereof. Furthermore, unless specifically limited otherwise, the term "polymer" is intended to include all possible configurational isomers of a material. Such configurations include, but are not limited to, isotactic, syndiotactic, and atactic symmetries. Polymers are molecules of higher relative molecular weight that actually or conceptually contain multiple repeats of units (i.e., repeat units) derived from molecules of lower relative mass (i.e., monomers). In the context of the present invention, the term "polymer" is also intended to include dimers, trimers, tetramers, and oligomers of one or more types of polymers. A polymer in the context of the present invention is preferably composed of at least 2, more preferably at least 5, even more preferably at least 10, still more preferably at least 30, and most preferably at least 60 monomers.

[0020] The term "monomer" as used herein refers to a polymerizable compound that can undergo polymerization and thereby contribute a constitutional unit (repeat unit) to the essential structure of a polymer or oligomer. A polymerizable compound is a functionalized compound that has one or more polymerizable groups. A number of monomers combine in a polymerization reaction to form a polymer. A monomer with one polymerizable group is also called a "monofunctional" or "monoreactive" compound, a compound with two polymerizable groups is also called a "difunctional" or "direactive" compound, and a compound with more than two polymerizable groups is also called a "multifunctional" or "multireactive" compound. A compound that does not have a polymerizable group is also called a "non-functional" or "non-reactive" compound.

[0021] The term "homopolymer," as used herein, refers to a polymer derived from one type of monomer (real, implied, or imaginary). The term "copolymer" as used herein generally refers to any polymer derived from more than one type of monomer, the polymer containing more than one corresponding repeat unit. In one embodiment, the copolymer is the reaction product of two or more monomers and thus contains two or more corresponding repeat units. The copolymer preferably contains 2, 3, 4, 5, or 6 repeat units. Copolymers obtained by copolymerization of three monomer types may also be called terpolymers. Copolymers obtained by copolymerization of four monomer types may also be called quaterpolymers. Copolymers may exist as block, random, and / or alternating copolymers. The term "block copolymer", as used herein, refers to a copolymer in which adjacent blocks are compositionally different, i.e., adjacent blocks are derived from different types of monomers or contain repeat units derived from the same type of monomers but differing in composition or sequence distribution of the repeat units. Furthermore, the term "random copolymer" as used herein refers to a polymer formed of macromolecules in which the probability of finding a given repeat unit at any given site in the chain is independent of the nature of the adjacent repeat units. Typically, in random copolymers, the sequence distribution of the repeat units follows Bernoulli statistics. The term "alternating copolymer," as used herein, refers to a copolymer composed of macromolecules that contain two types of repeat units in alternating order.

[0022] "Siloxane" has the general formula R3Si[OSiR2] n OSiR3 or (RSi) n O 3n / 2 where R may be a hydrogen atom or an organic group and n is an integer ≧1. In contrast to silanes, the silicon atoms of siloxanes are not directly linked to each other, but through intermediate oxygen atoms: Si-O-Si. Depending on the chain length, siloxanes may occur as linear or branched or cubic or ladder or random oligomeric or polymeric siloxanes (i.e. oligosiloxanes or polysiloxanes). Siloxanes in which at least one substituent R is an organic group are called organosiloxanes. "Halogen," as used herein, refers to an element belonging to Group 17 of the periodic table. Group 17 of the periodic table contains the chemically related elements fluorine (F), chlorine (Cl), bromine (Br), iodine (I), and astatine (At).

[0023] As explained above, "electronic packaging" is a major area within the field of electronics and includes a wide variety of technologies. Electronic packaging refers to the insertion of discrete components, integrated circuits, and MSI (medium-scale integrated circuit) and LSI (large-scale integrated circuit) chips (usually attached to lead frames by beam leads) into plate-through holes in multilayer circuit boards (also called cards) where they are soldered into place. Packaging of electronic systems must consider protection from mechanical damage, cooling, radio frequency noise emissions, protection from electrostatic discharge, maintenance, operator convenience, and cost. The term "microelectronic device" as used herein refers to electronic devices of very small electronic design and components. This means that they are usually, but not always, on the micrometer scale or smaller. Such devices are typically fabricated from semiconductor materials and contain one or more microelectronic components that are interconnected in a packaging structure to form a microelectronic device. Many electronic components of typical electronic designs have available microelectronic equivalents. Microelectronic devices include transistors, capacitors, inductors, resistors, diodes, and of course insulators and conductors can all be found in microelectronic devices. Also, because the size of the components, leads, and pads is typically very small, microelectronics often use unique wiring techniques such as wire bonding.

[0024] The term "field effect transistor" or "FET" as used herein refers to a transistor that uses an electric field to control the electrical behavior of the device. FETs are also known as unipolar transistors because they involve single-carrier-type operation. There are many different implementations of field effect transistors. Field effect transistors generally exhibit very high input impedance at low frequencies. The conductivity between the drain and source terminals is controlled by the electric field of the device, which is generated by the voltage difference between the body and gate of the device. The term "thin film transistor" or "TFT", as used herein, refers to a particular type of transistor that is fabricated by depositing a thin film of an active semiconductor layer, as well as a dielectric layer and metal contacts, on a supporting (but non-conductive) substrate. Since the main application of TFTs is in liquid crystal displays (LCDs), the typical substrate is glass. This differs from conventional transistors, where the semiconductor material is typically a substrate such as a silicon wafer. TFTs can be used to form TFT array panels for liquid crystal display (LCD) devices. The term "photoresist" as used herein refers to a light-sensitive material used in several processes, such as photolithography and photoengraving, to form a patterned coating on a surface. This process is very important in the electronics industry. The process begins by coating a substrate with a light-sensitive material. A patterned mask is then applied to the surface to block light, so that only the unmasked areas of the material are exposed to light. A solvent, called a developer, is then applied to the surface. In the case of a positive photoresist, the light-sensitive material reacts with the light to become more soluble than the unexposed parts, and the developer dissolves the areas exposed to light, leaving behind a coating where the mask was placed. In the case of a negative photoresist, the light-sensitive material is strengthened (either polymerized or crosslinked) by the light, and the developer dissolves only the areas not exposed to light, leaving behind a coating in the areas where the mask was not placed.

[0025] The terms "photoacid" and "photoacid generator" (PAG), as used herein, refer to molecules that become more acidic upon absorption of light. This is either due to the formation of a strong acid upon photodissociation or due to the dissociation of a proton (e.g., ring closure) upon photodissociation. There are two main types of molecules that release a proton upon irradiation: photoacid generators (PAGs) and photoacids (PAHs). PAGs undergo irreversible proton photodissociation, whereas PAHs are molecules that undergo proton photodissociation and thermal recombination. In this case, the excited state is highly acidic, but reversible. An example of a photodissociation is triphenylsulfonium triflate, which has the formula [(CH)S][CFSO]. This colorless salt is composed of a sulfonium cation and a triflate anion. Many related salts are known, including those with other non-coordinating anions and those with a variety of substituents on the phenyl ring. Triphenylsulfonium salts absorb at 233 nm and induce the following series of reactions: Because this series of reactions is irreversible, triphenylsulfonium triflate is a photoacid generator (PAG). [(C6H5)3S][CF3SO3]+hν->[(C6H5)2S][CF3SO3]+C6H5 [(C6H5)2S][CF3SO3]+C6H5->(C6H5C6H4)(C6H5)S+[CF3SO3]H

[0026] The term "photoactive solubility modifier" as used herein refers to a compound that upon exposure to light converts the photoresist into a derivative that is soluble in a suitable developer. During masking and patterning of the photoresist, portions of the photoresist film are exposed to light while other portions remain unexposed. In the unexposed areas of the positive photoresist film, the photoresist remains insoluble in the developer, while in the exposed areas, the photoactive solubility modifier forms a soluble species that makes the photoresist soluble in the developer.

[0027] Preferred Embodiments Positive Photoresist Formulations In a first aspect, the present invention provides a method for producing a composition comprising the steps of: (a) a siloxane polymer comprising a first repeat unit and a second repeat unit; and (b) Photoactive Dissolution Modifiers A positive photoresist formulation comprising: The present invention relates to a positive photoresist formulation, wherein the first repeat unit contains at least one maleimide group and the second repeat unit does not contain any maleimide groups.

[0028] The maleimide group is a functional group represented by the following structure: [ka] In the formula, R 1 and R 2 are the same or different and each independently represents H or a substituent. R 1 and R 2 When R are both H, the maleimide group is an unsubstituted maleimide group. 1 and R 2 is a substituent other than H, the maleimide group is a substituted maleimide group. [ka] represents the point at which the maleimide group is attached to the remainder of the structure of the first repeat unit. The synthesis of maleimide-functionalized trialkoxysilanes is described in CN104447849.

[0029] Siloxane Polymer The synthesis of siloxane polymers is described in PCT / EP2020 / 055952, which claims priority to European Patent Application No. 19161650.7.

[0030] First repeat unit In a preferred embodiment, the first repeat unit has formula (1): [ka] Formula (1) and wherein the first siloxane monomer is represented by During the ceremony, L 1 , L 2 , and L 3 are the same or different and are each independently selected from R, OR, and halogen; L 1 , L 2 , and L 3 at least one of is OR or halogen; R is selected from the group consisting of H, linear alkyl having 1 to 30 carbon atoms, branched alkyl having 3 to 30 carbon atoms, cyclic alkyl having 3 to 30 carbon atoms, aryl having 6 to 20 carbon atoms, and one or more non-adjacent and non-terminal CH groups are optionally selected from -O-, -S-, -C(=O)-, -C(=S)-, -C(=O)-O-, -OC(=O)-, -NR 0 -, -SiR 0 R 00 -, -CF2-, -CR 0 =CR 00 -, -CY 1 =CY 2 -, or -C≡C-, and one or more H atoms are optionally replaced by F; R 1 and R 2 are the same or different and are each independently selected from H, alkyl having 1 to 20 carbon atoms, cycloalkyl having 3 to 20 carbon atoms, and aryl having 6 to 20 carbon atoms, wherein one or more H atoms are optionally replaced by F or R 1 and R 2 together form a monocyclic or polycyclic organic ring system, in which one or more H atoms are optionally replaced by F; Z represents a linear alkylene group having 1 to 20 carbon atoms, a branched alkylene group having 3 to 20 carbon atoms, or a cyclic alkylene group having 3 to 20 carbon atoms, and one or more non-adjacent and non-terminal CH groups are optionally selected from -O-, -S-, -C(=O)-, -C(=S)-, -C(=O)-O-, -OC(=O)-, -NR 0-, -SiR 0 R 00 -, -CF2-, -CR 0 =CR 00 -, -CY 1 =CY 2 -, or -C≡C-, and one or more H atoms are optionally replaced by F; Y 1 and Y 2 are the same or different and are each independently selected from H, F, Cl, and CN; R 0 and R 00 are the same or different and are each independently selected from H, optionally fluorinated straight chain alkyl having 1 to 20 carbon atoms, and branched chain alkyl having 3 to 20 carbon atoms; The second siloxane monomer is different from the first siloxane monomer.

[0031] L 1 , L 2 , and L 3 are the same or different from each other and are each independently selected from R, OR, F, Cl, BR, and I; L 1 , L 2 , and L 3 At least one of is preferably OR, F, Cl, Br, or I.

[0032] Condition (1) or (2): (1) L 1 =L 2 =L 3 =OR (2)L 1 =L 2 = R and L 3 =Cl It is more preferable that one of the following applies:

[0033] In a preferred embodiment, R is selected from the group consisting of H, linear alkyl having 1 to 20, preferably 1 to 12 carbon atoms, branched alkyl having 3 to 20, preferably 3 to 12 carbon atoms, cyclic alkyl having 3 to 20, preferably 3 to 12 carbon atoms, aryl having 6 to 14 carbon atoms, and one or more non-adjacent and non-terminal CH groups are optionally selected from -O-, -S-, -C(=O)-, -C(=S)-, -C(=O)-O-, -OC(=O)-, -NR 0 -, -SiR 0 R 00 -, -CF2-, -CR 0 =CR 00 -, -CY 1 =CY 2 -, or -C≡C-, and one or more H atoms are optionally replaced by F.

[0034] In a more preferred embodiment, R is selected from the group consisting of H, linear alkyl having 1 to 12 carbon atoms, branched alkyl having 3 to 12 carbon atoms, cyclic alkyl having 3 to 12 carbon atoms, and aryl having 6 to 14 carbon atoms. In the most preferred embodiment, R is H, -CH, -CHCH, -CHCH, -CH(CH), -CH 11 -Ph, and -Ph. In a preferred embodiment, R 1 and R 2 are the same or different and are each independently selected from H, alkyl having 1 to 12 carbon atoms, cycloalkyl having 3 to 12 carbon atoms, and aryl having 6 to 14 carbon atoms, wherein one or more H atoms are optionally replaced by F or R 1 and R 2 together form a monocyclic or polycyclic aliphatic ring system, a monocyclic or polycyclic aromatic ring system, or a polycyclic aliphatic and aromatic ring system, in which one or more H atoms are optionally replaced by F.

[0035] Preferred monocyclic or polycyclic aliphatic ring systems have 3 to 20, preferably 5 to 12, ring carbon atoms. Preferred monocyclic or polycyclic aromatic ring systems have 5 to 20, preferably 6 to 12, ring carbon atoms. Preferred polycyclic aliphatic and aromatic ring systems have 6 to 30, preferably 10 to 20, ring carbon atoms. In a more preferred embodiment, R 1 and R 2 are the same or different from each other and are selected from H, -CH3, -CF3, -CH2CH3, -CF2CF3, -CH2CH2CH3, -CH(CH3)2, or -Ph.

[0036] In an even more preferred embodiment, R 1 and R 2 are the same and selected from -CH3, -CF3, -CH2CH3, -CF2CF3, or -Ph. In the most preferred embodiment, R 1 and R 2 is -CH3.

[0037] In a preferred embodiment, Z represents a linear alkylene group having 1 to 12 carbon atoms, a branched alkylene group having 3 to 12 carbon atoms, or a cyclic alkylene group having 3 to 12 carbon atoms, and one or more non-adjacent and non-terminal CH groups are optionally selected from -O-, -S-, -C(=O)-, -C(=S)-, -C(=O)-O-, -OC(=O)-, -NR 0 -, -SiR 0 R 00 -, -CF2-, -CR 0 =CR 00 -, -CY 1 =CY 2 -, or -C≡C-, and one or more H atoms are optionally replaced by F. In a more preferred embodiment, Z is -(CH2)-, -(CH2)2-, -(CH2)3-, -(CH2)4-, -(CH2)5-, -(CH2)6-, -(CH2)7-, -(CH2)8-, -(CH2)9-, -(CH2) 10 -, -(CH2) 11- and -(CH2) 12 - represents a linear alkylene group having 1 to 12 carbon atoms selected from the following: In a preferred embodiment, R 0 and R 00 are the same or different and are each independently selected from H, optionally fluorinated straight chain alkyl having 1 to 12 carbon atoms, and branched chain alkyl having 3 to 12 carbon atoms.

[0038] In a more preferred embodiment, R 0 and R 00 are the same or different and are each independently selected from H, -CH3, -CF3, -CH2CH3, and -CF2CF.

[0039] In a particularly preferred embodiment, the first repeat unit has formula (2): [ka] Formula (2) and wherein the first siloxane monomer is represented by During the ceremony, L 1 =-OCH3, -OCF3, -OCH2CH3, -OCF2CF3, -OCH2CH2CH3, -OCH(CH3)2, -OC6H 11 or -Ph, Z=-(CH2) n where n=1 to 10; R 1 =H, -CH3, -CF3, -CH2CH3, -CF2CF3, or -Ph.

[0040] In a most preferred embodiment, the first repeat unit is derived from a first siloxane monomer represented by formula (3) or (4) below: [ka]

[0041] Second repeat unit In a preferred embodiment, the second repeat unit does not contain a maleimide group and has the following structure S1 or S2: [ka] and a second siloxane monomer represented by one of: During the ceremony, L 11 , L 12 , and L 13 are the same or different and are each independently selected from OR′ and halogen; R' is selected from the group consisting of linear alkyl having 1 to 30 carbon atoms, branched alkyl having 3 to 30 carbon atoms, cyclic alkyl having 3 to 30 carbon atoms, and aryl having 6 to 20 carbon atoms, and one or more non-adjacent and non-terminal CH groups are optionally selected from -O-, -S-, -C(=O)-, -C(=S)-, -C(=O)-O-, -OC(=O)-, -NR 0 -, -SiR 0 R 00 -, -CF2-, -CR 0 =CR 00 -, -CY 1 =CY 2 -, or -C≡C-, and one or more H atoms are optionally replaced by F; R 11 and R 12 are the same or different from each other, and each independently represents H, optionally -O-, -S-, -C(=O)-, -C(=S)-, -C(=O)-O-, -OC(=O)-, -NR 0 -, -SiR 0 R 00 -, -CF2-, -CR 0 =CR 00 -, -CR 0 =CR 00 2, -CY 1 =CY 2-, -C≡C- ... R 0 , R 00 , Y 1 , and Y 2 is defined as shown above.

[0042] L 11 , L 12 , and L 13 are the same as or different from each other and are preferably each independently selected from OR′, F, Cl, Br, and I. L 11 , L 12 , and L 13 are the same or different from each other and are more preferably each independently selected from OR′.

[0043] In a preferred embodiment, R' is selected from the group consisting of linear alkyl having 1 to 20, preferably 1 to 12 carbon atoms, branched alkyl having 3 to 20, preferably 3 to 12 carbon atoms, cyclic alkyl having 3 to 20, preferably 3 to 12 carbon atoms, aryl having 6 to 14 carbon atoms, and one or more non-adjacent and non-terminal CH groups are optionally selected from -O-, -S-, -C(=O)-, -C(=S)-, -C(=O)-O-, -OC(=O)-, -NR 0 -, -SiR 0 R 00 -, -CF2-, -CR 0 =CR 00 -, -CY 1 =CY 2 -, or -C≡C-, and one or more H atoms are optionally replaced by F. In a more preferred embodiment, R' is selected from the group consisting of straight chain alkyl having 1 to 12 carbon atoms, branched chain alkyl having 3 to 12 carbon atoms, cyclic alkyl having 3 to 12 carbon atoms, and aryl having 6 to 14 carbon atoms.

[0044] In particularly preferred embodiments, R' is -CH3, -CF3, -C2H5, -C2F5, -C3H7, -C3F7, -C4H9, -C4F9, -C5H 11 , -C5H4F7, -C6H 13 , -C6H4F9, -C7H 15 , -C7H4F 11 , -CH 17 , -C8H4F 13 , -CH=CH2, -C(CH3)=CH2, -C6H5, and -C6F5. In the most preferred embodiment, R' is selected from -CH3 or -C2H5. In a preferred embodiment, R 11 and R 12 are the same or different from each other and each independently represent H, optionally -O-, -S-, -C(=O)-, -C(=S)-, -C(=O)-O-, -OC(=O)-, -NR 0 -, -SiR 0 R 00 -, -CF2-, -CR 0 =CR 00 -, -CR 0 =CR 00 2, -CY 1 =CY 2 -, -C≡C- ...

[0045] In a more preferred embodiment, R 11 and R 12is H, optionally -C(=O)-, -C(=O)-O-, -OC(=O)-, -CR 0 =CR 00 -, -CR 0 =CR 00 2, and -CY 1 =CY 2 -, wherein one or more H atoms are optionally replaced by F.

[0046] In a particularly preferred embodiment, R 11 and R 12 are -CH3, -CF3, -C2H5, -C2F5, -C3H7, -C3F7, -C4H9, -C4F9, -C5H 11 , -C5H4F7, -C6H 13 , -C6H4F9, -C7H 15 , -C7H4F 11 , -CH 17 , -C8H4F 13 , -CH=CH2, -C(CH3)=CH2, -C3H6-OC(=O)-CH=CH2, -C3H6-OC(=O)-C(CH3)=CH2, -C6H5, and -C6F5. In the most preferred embodiment, R 11 and R 12 is selected from -CH3 or -C2H5.

[0047] In a particularly preferred embodiment, the second repeat unit has the following structure S1: [ka] and a second siloxane monomer represented by During the ceremony, L 11 , L 12 , and L 13 are the same or different from each other and are each independently selected from OR′; R' is selected from the group consisting of linear alkyl having 1 to 20, preferably 1 to 12 carbon atoms, branched alkyl having 3 to 20, preferably 3 to 12 carbon atoms, cyclic alkyl having 3 to 20, preferably 3 to 12 carbon atoms, and aryl having 6 to 14 carbon atoms, and one or more non-adjacent and non-terminal CH groups are optionally selected from -O-, -S-, -C(=O)-, -C(=S)-, -C(=O)-O-, -OC(=O)-, -NR 0 -, -SiR 0 R 00 -, -CF2-, -CR 0 =CR 00 -, -CY 1 =CY 2 -, or -C≡C-, and one or more H atoms are optionally replaced by F; R 11 is H, optionally -O-, -S-, -C(=O)-, -C(=S)-, -C(=O)-O-, -OC(=O)-, -NR 0 -, -SiR 0 R 00 -, -CF2-, -CR 0 =CR 00 -, -CR 0 =CR 00 2, -CY 1 =CY 2 -, -C≡C- ... R 0 , R 00 , Y 1 , and Y 2 is defined as shown above.

[0048] In the structure S1, it is particularly preferable that the following applies: R' is selected from the group consisting of linear alkyl having 1 to 12 carbon atoms, branched alkyl having 3 to 12 carbon atoms, cyclic alkyl having 3 to 12 carbon atoms, and aryl having 6 to 14 carbon atoms; R 11 are -CH3, -CF3, -C2H5, -C2F5, -C3H7, -C3F7, -C4H9, -C4F9, -C5H 11 , -C5H4F7, -C6H 13 , -C6H4F9, -C7H 15 , -C7H4F 11 , -CH 17 , -C8H4F 13 , -CH=CH2, -C(CH3)=CH2, -C3H6-OC(=O)-CH=CH2, -C3H6-OC(=O)-C(CH3)=CH2, -C6H5, and -C6F5.

[0049] Preferred second siloxane monomers are represented by one of the following structures: [ka] During the ceremony, R 11 and R 12 has one of the meanings as defined above.

[0050] More preferred second siloxane monomers are represented by one of the following structures: [ka] [ka]

[0051] Third repeat unit In a preferred embodiment, the siloxane polymer included in the positive photoresist formulation according to the present invention further comprises a third repeat unit, wherein the third repeat unit does not comprise a maleimide group. Preferably, the third repeat unit is different to the second repeat unit.

[0052] In a preferred embodiment, the third repeat unit has the following structure T1 or T2: [ka] and a third siloxane monomer represented by one of: During the ceremony, L 21 , L 22 , L 23 , and L 24 are the same or different and are each independently selected from OR″ and halogen; R″ is selected from the group consisting of linear alkyl having 1 to 30 carbon atoms, branched alkyl having 3 to 30 carbon atoms, cyclic alkyl having 3 to 30 carbon atoms, and aryl having 6 to 20 carbon atoms, and one or more non-adjacent and non-terminal CH groups are optionally selected from -O-, -S-, -C(═O)-, -C(═S)-, -C(═O)-O-, -OC(═O)-, -NR 0 -, -SiR 0 R 00 -, -CF2-, -CR 0 =CR 00 -, -CY 1 =CY 2 -, or -C≡C-, and one or more H atoms are optionally replaced by F; Z is absent or represents a linear alkylene group having 1 to 20 carbon atoms, a branched alkylene group having 3 to 20 carbon atoms, or a cyclic alkylene group having 3 to 20 carbon atoms, and one or more non-adjacent and non-terminal CH groups are optionally selected from -O-, -S-, -C(=O)-, -C(=S)-, -C(=O)-O-, -OC(=O)-, -NR 0 -, -SiR 0 R 00 -, -CF2-, -CR 0 =CR 00 -, -CY 1 =CY 2-, or -C≡C-, and one or more H atoms are optionally replaced by F; R 0 , R 00 , Y 1 , and Y 2 is defined as shown above.

[0053] L 21 , L 22 , L 23 , and L 24 are the same or different from each other and are preferably each independently selected from OR″, F, Cl, Br, and I. L 21 , L 22 , L 23 , and L 24 are the same or different from each other, and more preferably are each independently selected from OR″. For R″, the preferred, more preferred, particularly preferred and most preferred definitions as disclosed above for R′ apply analogously.

[0054] In a preferred embodiment, Z is absent or represents a linear alkylene group having 1 to 12 carbon atoms, a branched alkylene group having 3 to 12 carbon atoms, or a cyclic alkylene group having 3 to 12 carbon atoms, and one or more non-adjacent and non-terminal CH groups are optionally selected from -O-, -S-, -C(=O)-, -C(=S)-, -C(=O)-O-, -OC(=O)-, -NR 0 -, -SiR 0 R 00 -, -CF2-, -CR 0 =CR 00 -, -CY 1 =CY 2 - or -C≡C-, one or more H atoms are optionally replaced by F, R 0 , R 00 , Y 1 , and Y 2 is as shown above.

[0055] In a more preferred embodiment, Z is absent or -(CH2)-, -(CH2)2-, -(CH2)3-, -(CH2)4-, -(CH2)5-, -(CH2)6-, -(CH2)7-, -(CH2)8-, -(CH2)9-, -(CH2) 10 -, -(CH2) 11 - and -(CH2) 12 - represents a linear alkylene group having 1 to 12 carbon atoms selected from the following:

[0056] In a particularly preferred embodiment, the third repeat unit has the following structure T1: [ka] and from a third siloxane monomer represented by During the ceremony, L 21 , L 22 , L 23 , and L 24 are the same or different from each other and are each independently selected from OR″; R″ is selected from the group consisting of linear alkyl having 1 to 20, preferably 1 to 12 carbon atoms, branched alkyl having 3 to 20, preferably 3 to 12 carbon atoms, cyclic alkyl having 3 to 20, preferably 3 to 12 carbon atoms, and aryl having 6 to 14 carbon atoms, and one or more non-adjacent and non-terminal CH groups are optionally selected from -O-, -S-, -C(═O)-, -C(═S)-, -C(═O)-O-, -OC(═O)-, -NR 0 -, -SiR 0 R 00 -, -CF2-, -CR 0 =CR 00 -, -CY 1 =CY 2 -, or -C≡C-, and one or more H atoms are optionally replaced by F; R 0 , R 00 , Y 1 , and Y 2 is defined as shown above.

[0057] In an alternative particularly preferred embodiment, the third repeat unit has the following structure T2: [ka] and from a third siloxane monomer represented by During the ceremony, L 21 , L 22 , and L 23 are the same or different from each other and are each independently selected from OR″; R″ is selected from the group consisting of linear alkyl having 1 to 20, preferably 1 to 12 carbon atoms, branched alkyl having 3 to 20, preferably 3 to 12 carbon atoms, cyclic alkyl having 3 to 20, preferably 3 to 12 carbon atoms, and aryl having 6 to 14 carbon atoms, and one or more non-adjacent and non-terminal CH groups are optionally selected from -O-, -S-, -C(═O)-, -C(═S)-, -C(═O)-O-, -OC(═O)-, -NR 0 -, -SiR 0 R 00 -, -CF2-, -CR 0 =CR 00 -, -CY 1 =CY 2 -, or -C≡C-, and one or more H atoms are optionally replaced by F; Z is absent or represents a linear alkylene group having 1 to 12 carbon atoms, a branched alkylene group having 3 to 12 carbon atoms, or a cyclic alkylene group having 3 to 12 carbon atoms, and one or more non-adjacent and non-terminal CH groups are optionally selected from -O-, -S-, -C(=O)-, -C(=S)-, -C(=O)-O-, -OC(=O)-, -NR 0 -, -SiR 0 R 00 -, -CF2-, -CR 0 =CR 00 -, -CY 1 =CY 2-, or -C≡C-, and one or more H atoms are optionally replaced by F; R 0 , R 00 , Y 1 , and Y 2 is defined as shown above.

[0058] Preferred third siloxane monomers are represented by one of the following structures: [ka] During the ceremony, L 21 and Z has one of the meanings as defined above.

[0059] More preferred third siloxane monomers are represented by one of the following structures: [ka] [ka]

[0060] Mole fraction of the first, second, and third repeat units

[0061] The molar fraction of the first repeating unit in the siloxane polymer is preferably in the range of 1 to 90%, preferably 5 to 70%, more preferably 10 to 50%, even more preferably 10 to 40%, and most preferably 10 to 30%, based on the total amount of repeating units in the siloxane polymer. The molar fraction of the second repeating unit in the siloxane polymer is preferably in the range of 10 to 90%, preferably 30 to 80%, more preferably 40 to 60%, even more preferably 45 to 55%, and most preferably 50%, based on the total amount of repeating units in the siloxane polymer. Based on the total amount of repeating units in the siloxane polymer, it is further preferred that the molar fraction of the first repeating unit in the siloxane polymer is in the range of 1 to 90%, preferably 5 to 70%, more preferably 10 to 50%, even more preferably 10 to 40%, and most preferably 10 to 30%, and the molar fraction of the second repeating unit in the siloxane polymer is in the range of 10 to 90%, preferably 30 to 80%, more preferably 40 to 60%, even more preferably 45 to 55%, and most preferably 50%. The molar fraction of the third repeat unit in the siloxane polymer is preferably in the range of 0 to 50%, preferably 5 to 40%, more preferably 10 to 30%, and most preferably 20 to 30%, based on the total amount of repeat units in the siloxane polymer.

[0062] Based on the total amount of repeating units in the siloxane polymer, it is further preferred that the molar fraction of the first repeating unit in the siloxane polymer is in the range of 1 to 90%, preferably 5 to 70%, more preferably 10 to 50%, even more preferably 10 to 40%, and most preferably 10 to 30%; the molar fraction of the second repeating unit in the siloxane polymer is in the range of 10 to 90%, preferably 30 to 80%, more preferably 40 to 60%, even more preferably 45 to 55%, and most preferably 50%; and the molar fraction of the third repeating unit in the siloxane polymer is in the range of 0 to 50%, preferably 5 to 40%, more preferably 10 to 30%, and most preferably 20 to 30%. The mole fractions of repeat units present in the siloxane polymer add up to 100%.

[0063] Further repeating units In a preferred embodiment, the siloxane polymer included in a positive photoresist formulation according to the present invention further comprises one or more additional repeat units, wherein the one or more additional repeat units do not comprise a maleimide group. Preferably, the one or more further repeat units are different to the second repeat unit and the third repeat unit.

[0064] In a preferred embodiment, the one or more further repeat units have the following structure F1: [ka] and from one or more additional siloxane monomers represented by During the ceremony, L 31 , L 32 , and L 33 are the same or different and are each independently selected from OR''' and halogen; R''' is selected from the group consisting of linear alkyl having 1 to 30 carbon atoms, branched alkyl having 3 to 30 carbon atoms, cyclic alkyl having 3 to 30 carbon atoms, and aryl having 6 to 20 carbon atoms, and one or more non-adjacent and non-terminal CH groups are optionally selected from -O-, -S-, -C(=O)-, -C(=S)-, -C(=O)-O-, -OC(=O)-, -NR 0 -, -SiR 0 R 00 -, -CF2-, -CR 0 =CR 00 -, -CY 1 =CY 2 -, or -C≡C-, and one or more H atoms are optionally replaced by F; R 31 is H, optionally -O-, -S-, -C(=O)-, -C(=S)-, -C(=O)-O-, -OC(=O)-, -NR 0 -, -SiR 0 R 00 -, -CF2-, -CR 0 =CR 00 -, -CR 0 =CR 00 2, -CY 1 =CY 2-, -C≡C- ... R 0 , R 00 , Y 1 , and Y 2 is defined as shown above.

[0065] L 31 , L 32 , and L 33 are preferably the same as or different from one another and are each independently selected from OR''', F, Cl, Br, and I. L 31 , L 32 , and L 33 are the same or different from each other and are more preferably each independently selected from OR'''. For R''', the preferred, more preferred, particularly preferred and most preferred definitions as disclosed above for R' apply analogously.

[0066] In a preferred embodiment, R 31 is H, optionally -O-, -S-, -C(=O)-, -C(=S)-, -C(=O)-O-, -OC(=O)-, -NR 0 -, -SiR 0 R 00 -, -CF2-, -CR 0 =CR 00 -, -CR 0 =CR 00 2, -CY 1 =CY 2-, -C≡C- ...

[0067] In a more preferred embodiment, R 31 is H, optionally -C(=O)-, -C(=O)-O-, -OC(=O)-, -CR 0 =CR 00 -, -CR 0 =CR 00 2, and -CY 1 =CY 2 -, wherein one or more H atoms are optionally replaced by F. In a particularly preferred embodiment, R 31 are -CH3, -CF3, -C2H5, -C2F5, -C3H7, -C3F7, -C4H9, -C4F9, -C5H 11 , -C5H4F7, -C6H 13 , -C6H4F9, -C7H 15 , -C7H4F 11 , -CH 17 , -C8H4F 13 , -CH=CH2, -C(CH3)=CH2, -C3H6-OC(=O)-CH=CH2, -C3H6-OC(=O)-C(CH3)=CH2, -C6H5, and -C6F5. In the most preferred embodiment, R 31 is selected from -C6H5 or -C6F5.

[0068] Further preferred siloxane monomers are represented by one of the following structures: [ka] During the ceremony, R 31 has one of the meanings as defined above.

[0069] More preferred additional siloxane monomers are represented by one of the following structures: [ka]

[0070] It is preferred that the mole fraction of the one or more further repeat units in the siloxane polymer is in the range of 0 to 50%, preferably 5 to 40%, more preferably 10 to 30%, and most preferably 20 to 30%, based on the total amount of repeat units in the siloxane polymer. The mole fraction of the one or more additional repeat units sums up to 100% with the mole fraction of the first repeat unit, the second repeat unit, and optionally the third repeat unit present in the siloxane polymer.

[0071] Chemical and physical characteristics of siloxane polymers The phrase "derived from a particular siloxane monomer" means that the associated repeat unit of the siloxane polymer is formed by a condensation reaction of the particular siloxane monomer with another monomer, typically retaining the characteristic structural features of the particular siloxane monomer in the associated repeat unit that forms part of the siloxane polymer. The siloxane polymers used in the present invention may have linear and / or branched structures, including, for example, ladder, closed cage, open cage, and amorphous structures. Preferably, the siloxane polymers used in the present invention have a molecular weight M, determined by GPC, of ​​at least 500 g / mol, more preferably at least 1,000 g / mol, and even more preferably at least 2,000 g / mol. w Preferably, the siloxane oligomer or polymer has a molecular weight M wis less than 50,000 g / mol, more preferably less than 30,000 g / mol, and even more preferably less than 10,000 g / mol.

[0072] Effect of repeating units in siloxane polymers The first repeat unit increases the pattern quality and reduces flowability during flood exposure and post-bake (see FIG. 1, steps IV and V). Additionally, the pattern flexibility is increased. The second repeat unit allows for the tuning of certain properties of the photoresist formulation, such as, for example, alkaline dissolution rate (ADR), molecular weight distribution, thermal and mechanical properties. The presence of the third repeat unit in the siloxane polymer reduces flowability during flood exposure and post-bake processing, increasing the pattern quality (see FIG. 1, steps IV and V), and also increases the mechanical properties of the pattern. The presence of one or more additional repeat units allows for the fine tuning of certain properties of the photoresist formulation, such as mechanical properties, dissolution rate, etc.

[0073] Photoactive Dissolution Modifiers The positive photoresist formulation according to the present invention comprises a photoactive dissolution modifier. The photoactive dissolution modifier is a compound that converts the photoresist into a derivative that is soluble in a suitable developer when exposed to light. During masking and patterning of a positive photoresist, parts of the photoresist film are exposed to light while other parts remain unexposed. In the unexposed areas, the resist remains insoluble in the developer, while in the exposed areas, the photoactive dissolution modifier forms a soluble species that allows the resist to dissolve in the developer. In the present invention, the photoactive dissolution modifier, upon exposure to light, converts the siloxane polymer into a derivative that is soluble in the developer. The photoactive dissolution regulator is preferably selected from the list consisting of diazonaphthoquinone (DNQ) or its derivatives. Here, the diazonaphthoquinone derivative is a compound prepared by esterifying naphthoquinone diazide sulfonic acid with a compound having a phenolic hydroxyl group, but is not particularly limited in terms of structure, and is preferably an ester compound with a compound having one or more phenolic hydroxyl groups. As naphthoquinone diazide sulfonic acid, 4-naphthoquinone diazide sulfonic acid or 5-naphthoquinone diazide sulfonic acid can be used. Since there is absorption in the i-line (wavelength: 365 nm) region, 4-naphthoquinone diazide sulfonic acid ester compounds are suitable for i-line exposure. Furthermore, since there is absorption in a wide range of wavelengths, 5-naphthoquinone diazide sulfonic acid ester compounds are suitable for exposure at a wide range of wavelengths. Depending on the exposure wavelength, it is preferable to select a 4-naphthoquinone diazide sulfonic acid ester compound or a 5-naphthoquinone diazide sulfonic acid ester compound. It is also possible to use a mixture of a 4-naphthoquinone diazide sulfonic acid ester compound and a 5-naphthoquinone diazide sulfonic acid ester compound.

[0074] The compound having a phenolic hydroxyl group is not particularly limited, but examples thereof include the following compounds (product names, manufactured by Honshu Chemical Industry Co., Ltd.). [ka] [ka]

[0075] A particularly preferred diazonaphthoquinone derivative is 4,4'-(1-(4-(1-(4-hydroxy-phenyl)-1-methylethyl)phenyl)ethylidene)bisphenol (TrisP-PA) modified with 2.0 moles of naphthoquinone diazide sulfonic acid. The optimum amount varies depending on the esterification rate of naphthoquinone diazide sulfonic acid, or the properties of the polysiloxane used, the required sensitivity, and the dissolution contrast between the exposed and non-exposed parts, but the amount of the diazonaphthoquinone derivative added is 3 to 20 mass%, more preferably 5 to 15 mass%, based on the total mass of the siloxane polymer. When the amount of the diazonaphthoquinone derivative added is 3 mass% or more, the dissolution contrast between the exposed and non-exposed parts is high, and good photosensitivity is obtained. Furthermore, in order to obtain a better dissolution contrast, it is preferable to use 5 mass% or more. On the other hand, when the amount of the diazonaphthoquinone derivative is 20 mass% or less, the colorless transparency of the cured film is improved.

[0076] Further ingredients Positive photoresist formulations according to the invention comprise one or more further siloxane polymers, which further siloxane polymers preferably do not contain maleimide groups. The positive photoresist formulation according to the present invention preferably comprises one or more solvents. Examples of solvents include: ethylene glycol monoalkyl ethers such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, and ethylene glycol monobutyl ether; diethylene glycol dialkyl ethers such as diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dipropyl ether, and diethylene glycol dibutyl ether; ethylene glycol alkyl ether acetates such as methyl cellosolve acetate and ethyl cellosolve acetate; propylene glycol monoalkyl ethers such as propylene glycol monomethyl ether and propylene glycol monoethyl ether; propylene glycol alkyl ether acetates such as PGMEA, propylene glycol monoethyl ether acetate, and propylene glycol monopropyl ether acetate; aromatic hydrocarbons such as benzene, toluene, and xylene; ketones such as methyl ethyl ketone, acetone, methyl amyl ketone, methyl isobutyl ketone, and cyclohexanone. Each of these solvents can be used individually or in combination of two or more. The blend ratio of the solvents varies depending on the coating method or the film thickness requirement after coating.

[0077] Preferred solvents are polar solvents, such as alcohol solvents, and ester solvents. Preferred alcohol solvents are ethanol, propan-1-ol, propan-2-ol, and propylene glycol methyl ether (PGME). Preferred ester solvent is 1-methoxy-2-propylacetat (PGMEA). The positive photoresist formulation may further include a surfactant. In order to improve coating properties, the use of a surfactant may be preferred. Examples of surfactants that can be used include nonionic surfactants, anionic surfactants, and amphoteric surfactants.

[0078] Examples of nonionic surfactants include polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene oleyl ether, and polyoxyethylene cetyl ether; polyoxyethylene fatty acid diesters; polyoxyethylene fatty acid monoesters; polyoxyethylene polyoxypropylene block polymers; acetylene alcohol; acetylene glycol; acetylene glycol derivatives such as polyethoxylates of acetylene alcohol; and polyethoxylates of acetylene glycol; fluorine-containing surfactants such as FLUORAD (trade name, manufactured by Sumitomo 3M Limited), MEGAFAC (trade name: manufactured by DIC Corporation), and SURFLON (trade name, manufactured by Asahi Glass Co., Ltd.); or organic siloxane surfactants such as KP341 (trade name, manufactured by Shin-Etsu Chemical Co., Ltd.). Examples of the acetylene glycol include 3-methyl-1-butyn-3-ol, 3-methyl-1-pentyn-3-ol, 3,6-dimethyl-4-octyne-3,6-diol, 2,4,7,9-tetramethyl-5-decyne-4,7-diol, 3,5-dimethyl-1-hexane-3-ol, 2,5-dimethyl-3-hexyne-2,5-diol, and 2,5-dimethyl-2,5-hexane-diol.

[0079] Examples of anionic surfactants include ammonium salts or organic amine salts of alkyldiphenyl ether disulfonic acids, ammonium salts or organic amine salts of alkyldiphenyl ether sulfonic acids, ammonium salts or organic amine salts of alkylbenzene sulfonic acids, ammonium salts or organic amine salts of polyoxyethylene alkyl ether sulfates, and ammonium salts or organic amine salts of alkyl sulfates. Examples of amphoteric surfactants include 2-alkyl-N-carboxymethyl-N-hydroxyethylimidazolium betaine and lauric acid amidopropyl hydroxysulfone betaine. These surfactants can be used individually or in combination of two or more, and the blend ratio thereof is usually 50 to 10,000 ppm, preferably 100 to 5,000 ppm, based on the total weight of the siloxane composition.

[0080] The positive photoresist formulation preferably includes one or more initiators, such as, for example, photochemically activated initiators or thermally activated initiators. Preferred photochemically activated initiators are photoinitiators that generate reactive species, such as, for example, free radicals, cations, or anions, when exposed to radiation, such as, for example, UV or visible light. Suitable photoinitiators are, for example, the Omnipol series (e.g., Omnipol TX) and the Speedcure series (e.g., Speedcure 7010). Preferred thermally activated initiators are thermal initiators that generate reactive species, such as, for example, free radicals, cations, or anions, when exposed to heat. The addition of Omnipol TX allows for curing with longer wavelength radiation, approximately 365 nm, compared to approximately 254 nm for the standard formulation.

[0081] In a particularly preferred embodiment of the present invention, the positive photoresist formulation includes a photoinitiator. The total amount of initiator in the positive photoresist formulation is preferably in the range of 0.01 to 10 wt %, more preferably 0.5 to 5 wt %, based on the total weight of the siloxane polymer.

[0082] It is further preferred that the positive photoresist formulation does not include a photoacid generator (PAG), however, if a PAG is required for other purposes, PAGs include diazomethane compounds, triazine compounds, sulfonate esters, diphenyliodonium salts, triphenylsulfonium salts, sulfonium salts, ammonium salts, phosphonium salts, and sulfonimide compounds. The positive photoresist formulation may further include a curing accelerator. A thermal acid generator or a thermal base generator can be used as the curing accelerator. Examples of thermal acid generators include salts or esters capable of generating organic acids, such as various aliphatic sulfonic acids and their salts, various aliphatic carboxylic acids and their salts, such as citric acid, acetic acid, and maleic acid, various aromatic carboxylic acids and their salts, such as benzoic acid and phthalic acid, aromatic sulfonic acids and their ammonium salts, various amine salts, aromatic diazonium salts, and phosphonic acids and their salts. Among the thermal acid generators, salts composed of organic acids and organic bases are particularly preferred, and salts composed of sulfonic acids and organic bases are more preferred. Preferred sulfonic acids include p-toluenesulfonic acid, benzenesulfonic acid, p-dodecylbenzenesulfonic acid, 1,4-naphthalenedisulfonic acid, methanesulfonic acid, etc. Such acid generators may be used individually or mixed together. Examples of thermal base generators include compounds that generate base, such as imidazole, tertiary amine, and quaternary ammonium, and mixtures thereof. Examples of bases that are released include imidazole derivatives such as N-(2-nitrobenzyloxycarbonyl)imidazole, N-(3-nitrobenzyloxycarbonyl)imidazole, N-(4-nitrobenzyloxycarbonyl)imidazole, N-(5-methyl-2-nitrobenzyloxycarbonyl)imidazole, N-(4-chloro-2-nitrobenzyloxycarbonyl)imidazole, and 1,8-diazabicyclo[5.4.0]undecene-7.Similar to acid generators, these base generators can be used individually or mixed together.

[0083] The positive photoresist formulation preferably further comprises one or more inorganic filler materials.Preferred inorganic filler materials are selected from nitrides, titanates, diamonds, oxides, sulfides, sulfites, sulfates, silicates, and carbides, which may be surface-modified with optional capping agents.More preferably, the filler materials are selected from the list consisting of AlN, Al2O3, BN, BaTiO3, BO3, Fe2O3, SiO2, TiO2, ZrO2, PbS, SiC, diamond, and glass particles.

[0084] Preferably, the total content of inorganic filler materials in the positive photoresist formulation ranges from 0.001 to 90% by weight, more preferably from 0.01 to 70% by weight, and most preferably from 0.01 to 50% by weight, based on the total weight of the composition. The positive photoresist formulations of the present invention may include one or more additives selected from diamines, diols, dicarboxylic acids, polyhedral oligomeric silsesquioxanes (POSS), edge-modified silsesquioxanes, small aromatic or aliphatic compounds, and nanoparticles, optionally modified with maleimide or dimethylmaleimide groups.

[0085] Modified POSS compounds can be easily prepared from available precursors and are readily incorporated into crosslinkable compositions with appropriate mixing conditions. For example, maleimide-substituted POSS compounds and their preparation are described in U.S. Patent Application Publication No. 2006 / 0009578, the disclosure of which is incorporated herein by reference.

[0086] Preferred additives are: [ka] [ka] [ka] is selected from During the ceremony, R= [ka] and X=-OH, -NH2, -CO2H, or [ka] and Sp=-CH-, -CHCH-, -CHCHCHCH-, -CHCHCHCHCH-, or -Si(CH)-CH-CH-CH-CH-, R x =H, -CH3, CF3, CN, or -CH2CH3; n=1 to 36, preferably 1 to 20, and more preferably 1 to 12.

[0087] Method for manufacturing a microelectronic structure - Patents.com In a second aspect, the present invention provides a method for manufacturing a microelectronic structure, preferably a packaged microelectronic structure, a FET structure, or a TFT structure, comprising the steps of: (1) applying a positive photoresist formulation according to the present invention to the surface of a substrate, preferably a conductive or semiconductive substrate; (2) photopatterning the positive photoresist formulation applied in step (1), preferably by (2a) irradiating the applied positive photoresist formulation with light having a specific wavelength through a mask, and (2b) developing the irradiated positive photoresist by exposing it to a developer and a wash solution to obtain a photopatterned structure; and (3) preferably curing the photopatterned structure obtained in step (2) by (3a) exposing the photopatterned structure to UV light irradiation and (3b) subjecting it to a post-baking treatment to obtain a cured photopatterned dielectric material on the surface of the substrate. The present invention provides a method comprising: The cured photopatterned dielectric material on the surface of the substrate preferably passivates and optionally planarizes the surface of the substrate.

[0088] The surface of the substrate to which the positive photoresist formulation is applied in step (1) can preferably be made of different materials, such as conductive or semiconductive materials, passivation layers, protective layers, or planarization layers. Preferred conductive materials are metals, such as aluminum, molybdenum, titanium, nickel, copper, silver, and metal alloys. Preferred semiconductive materials are metal oxides, such as indium gallium zinc oxide (IGZO), indium zinc oxide (IZO), or amorphous silicon and polysilicon. Preferred passivation layers, protective layers, or planarization layers can be made of any polymeric material, such as polyimide, polybenzylcyclobutane, silicon nitride, silicon oxynitride, silicon oxide, silicon carbide, and the like. The positive photoresist formulation applied in step (1) preferably includes one or more initiators. Preferred initiators are described above. When the positive photoresist formulation contains a solvent, the formulation preferably has a certain concentration of siloxane polymer depending on the desired film thickness. To adjust the concentration of siloxane polymer, the solvent is removed by heating, more preferably by heating to 80-120°C. The preferred concentration of siloxane polymer is in the range of 1-50% by weight, more preferably 10-40% by weight, most preferably 20-30% by weight, based on the total weight of siloxane polymer and solvent in the formulation.

[0089] The method of applying the positive photoresist formulation in step (1) is not particularly limited. The preferred application method in step (1) is dispensing, dipping, screen printing, stencil printing, roller coating, spray coating, slot coating, slit coating, spin coating, stereolithography, gravure printing, flexography, or inkjet printing. The positive photoresist formulations of the present invention can be provided in the form of formulations suitable for gravure, flexographic and / or inkjet printing. For the preparation of such formulations, ink-based formulations known in the state of the art can be used. The positive photoresist formulation is preferably applied in step (1) as a layer having an average thickness of about 0.1 to 50 μm, more preferably about 0.5 to 20 μm, and most preferably about 1 to 5 μm. The desired layer thickness can be obtained by applying various concentrations of the positive photoresist formulation, either in a single or multiple coats.

[0090] The positive photoresist formulation applied to the surface of the substrate in step (1) is preferably solidified by a pre-bake treatment. Such pre-bake is preferred for solidifying the positive photoresist formulation on the substrate. The pre-bake treatment can be carried out at a temperature of 70 to 150°C, preferably at a temperature of 90 to 130°C. The pre-bake treatment time is preferably 10 to 180 seconds, more preferably 30 to 90 seconds, in the case of a hot plate, and preferably 1 to 10 minutes, more preferably 1 to 5 minutes, in the case of an oven. It is particularly preferred to include a step of removing excess solvent by spinning or reduced pressure prior to the pre-bake treatment.

[0091] The photopatterning in step (2) is carried out by (2a) irradiating the applied positive photoresist formulation with light having a specific wavelength through a mask, and (2b) developing the irradiated positive photoresist by exposing it to a developer and a washing solution to obtain a photopatterned structure. The irradiation of light having a specific wavelength in step (2a) preferably includes exposure to UV and / or violet light. Typically, any type of light source conventionally used in pattern formation processes can be used. Such light sources include high-pressure mercury lamps, low-pressure mercury lamps, metal halide lamps, xenon lamps, laser diodes, and LEDs. As UV light, ultraviolet rays such as g-line, h-line, and i-line are usually used. Except for ultra-fine processing of semiconductors, etc., in the case of patterns of several μm to several tens of μm, light of 360 to 430 nm (high-pressure mercury lamp) is generally used. In particular, in the case of liquid crystal display devices, light of 430 nm is often used. The energy of the irradiation light depends on the light source or the thickness of the positive photoresist layer, but is preferably 20 to 2,000 mJ / cm. 2 , preferably 50 to 1,000 mJ / cm 2 The range is. A general photomask can be used to irradiate the light pattern. Such a photomask can be freely selected from known ones. The environment during irradiation is not particularly limited, but may generally be an ambient atmosphere (air) or a nitrogen atmosphere. In addition, when a film is formed on the entire surface of the substrate, the entire surface of the substrate may be irradiated with light. In the present invention, the patterned structure also includes the case where the structure is formed on the entire surface of the substrate.

[0092] As the developer used for development, any developer generally applied to the development of conventionally known photosensitive siloxane compositions can be used. Preferred developers include alkaline developers that are aqueous solutions of alkaline compounds such as tetraalkylammonium hydroxide, choline, alkali metal hydroxides, alkali metal metasilicates (hydrates), alkali metal phosphates (hydrates), ammonia, alkylamines, alkanolamines, and heterocyclic amines, and a particularly preferred alkaline developer is an aqueous TMAH solution. Such alkaline developers may optionally further contain a water-soluble organic solvent such as methanol and ethanol, or a surfactant. The development method can also be freely selected from conventionally known methods. Typically, the development method includes immersion (dip) in the developer, paddle, shower, slit, cap coat, and spray methods. A pattern can be obtained by this development. After development with the developer, it is preferable to perform washing with water.

[0093] The curing in step (3) is preferably carried out by (3a) exposing the photopatterned structure to UV light radiation (i.e., flood exposure) and (3b) subjecting it to a thermal post-bake treatment to obtain a cured photopatterned dielectric material on the surface of the substrate. When a positive photoresist formulation is used to form a transparent coating, it is necessary to irradiate the film with light, a process called bleaching or flood exposure (3a). By carrying out flood exposure, the unreacted diazonaphthoquinone derivative remaining in the film is decomposed by light, further improving the optical transparency of the film. In the bleach exposure method, a high-pressure mercury lamp and a low-pressure mercury lamp are used, and the light is approximately 10 to 2,000 mJ / cm. 2 is applied to the entire surface. The thermal post-baking treatment in step (3b) preferably includes exposure to heat. The curing temperature of the structure is not particularly limited and can be freely selected as long as the dehydration condensation of the siloxane polymer proceeds. If the curing temperature is too low, the reaction does not proceed sufficiently, and silanol groups may remain in the film, which may adversely affect the performance of the coating. Therefore, it is more preferable that the thermal post-baking treatment includes exposure to high temperatures, preferably in the range of 100 to 300°C, more preferably in the range of 150 to 250°C, and most preferably in the range of 180 to 230°C.

[0094] Generally, when a developed pattern is heated and hardened, the shape of the pattern often changes. Specifically, the developed pattern generally has a rectangular cross section, and its sidewalls are almost straight and upright. However, when the pattern is heated, the coated material temporarily softens, and the cross-sectional shape of the pattern tends to change from a rectangle to a trapezoid. As a result, the inclination angle of the sidewall, i.e., the taper angle, tends to decrease, and the width of the cross-sectional bottom of the pattern, i.e., the line width, tends to increase. In contrast, the use of a positive photoresist formulation according to the present invention makes it possible to obtain a taper angle after post-baking (3a) that is equivalent to that of the development step (2b) by inhibiting the loss of taper angle due to flow of the softened material, presumably due to the cross-linking of the siloxane in step (2a).

[0095] Electronic Devices In a third aspect, the present invention provides an electronic device, preferably a packaged microelectronic device, a FET array panel, or a TFT array panel, comprising a microelectronic structure obtainable by the method for manufacturing a microelectronic structure according to the present invention. In the case of electronic devices, the cured photopatterned dielectric material resulting from the positive photoresist formulation preferably passivates and optionally planarizes the surface of a substrate that forms part of the microelectronic structure. The cured photopatterned dielectric material forms a dielectric layer that serves to electrically isolate one or more electronic components of the electronic device from one another.

[0096] The present invention is further illustrated by the following examples, which should not be construed as limiting in any respect. Those skilled in the art will recognize that various modifications, additions, and variations can be made to the present invention without departing from the spirit and scope of the invention as defined in the appended claims. EXAMPLES

[0097] Measurement method NMR spectroscopy: The NMR sample contained CD3CN in the annular space of 5 mm (φ A ) placed in a thin-walled precision glass NMR tube (Wilmad 537 PPT) with a diameter of 3.7 mm. A ) in the FEP inliner, or 5mm (φ A ) were measured internally as dry solvents in precision glass NMR tubes. Measurements were performed at 25 °C on a Bruker Avance III 400 MHz spectrometer equipped with a 9.3980 T cryomagnet. 1 H NMR spectra were obtained using 5 mm complexes operating at 400.17 and 376.54 MHz, respectively. 1 H / 19 Obtained using an F probe. 13 C and 29 Si NMR spectra were obtained using a 5 mm broadband inverse probe operating at 100.62 and 79.50 MHz, respectively. The line broadening parameters used in the exponential multiplication of the free induction decays were set equal to or less than the respective data point resolution or natural resonance linewidth. All lineshape functions were Lorentzian unless otherwise specified. In some cases, the free induction decays were multiplied by Gaussian functions to enhance the resolution of the Fourier transform. 1 H NMR chemical shifts were referenced to tetramethylsilane (TMS) and given for the following solvents used: CDCl3 (7.23 ppm), DMSO-d6 (2.50 ppm), and CD2HCN (1.96 ppm). 13C NMR spectra were referenced to tetramethylsilane (TMS) and analyzed using the solvents CDCl3 (77.2 ppm), DMSO-d6 (39.5 ppm), and CD3 C The chemical shift of N (118.7 ppm) was used. 29 Si NMR chemical shifts were referenced to SiCl4, with the positive (negative) sign indicating a chemical shift to higher (lower) frequencies of the reference compound.

[0098] GPC Analysis: Gel permeation chromatography (GPC) analysis was performed on a Waters e2695 liquid chromatography system equipped with a refractive index detector. The column was a 0.6 cm 3 Elution was with tetrahydrofuran at a flow rate of 1000 μg / min and a temperature of 40° C. The GPC system was calibrated using a series of six narrow dispersity polystyrene standards. Photopatterning: The dried coating film was patterned with a NES2W-ghi06 stepper (Nikon Engineering Co., Ltd.; Nikon Precision Inc.) with a line width, line spacing, and hole pattern shape (4 μm line width, 12 μm spacing) and 100 to 200 mJ / cm 2 of broadband illumination for ghi-line resist processing. 2 Using exposure wavelengths of 365-436 nm, the stepper achieves a resolution of less than 2.3 μm, with a peak performance as small as 1.7 μm, and an overlay accuracy of 0.35 μm for wafer sizes of 150-200 mm. UV lamp for full surface exposure 1: Approximately 100 to 2000 mJ / cm using a UV-visible exposure device such as Canon Mask Aligner PLA-501F type. 2 There are methods to expose the entire surface to 1000 nm of radiation (equivalent to an exposure dose at a wavelength of 365 nm). UV lamp 2 for full surface exposure: Use an ultraviolet-visible exposure device (e.g., Ushio), approximately 50-100 mJ / cm 2 There are methods to expose the entire surface to 1000 nm of radiation (equivalent to an exposure dose at a wavelength of 230 nm).

[0099] Monomer synthesis 1-Allyl-3,4-dimethyl-pyrrole-2,5-dione: [ka] 3,4-Dimethyl-furan-2,5-dione (160.0 g; 1243.4 mmol; 1.0 equiv.) was dissolved in anhydrous toluene (1040 mL; 9.8 mol; 7.90 equiv.) in a 250 mL round bottom flask equipped with a Dean-Stark trap. The mixture was stirred at room temperature until complete dissolution. A solution of allylamine (139.9 ml; 1865.0 mmol; 1.5 equiv.) in anhydrous toluene (160.0 ml; 1.5 mol; 1.2 equiv.) was added at 23° C. using a dropping funnel. The solution was warmed (140° C., reflux) and stirred at 140° C. for 5 h. Over time, a white solid precipitated. The mixture was then cooled to room temperature and the toluene was removed at 70° C. under reduced pressure (10 mbar). The liquid, clear, pale orange crude product (222 g) was isolated. The mixture was then cooled to room temperature and the toluene was removed under reduced pressure (10 mbar) at 70° C. -2 After fractional condensation at 120° C. (mbar), the clear, colorless product 1-allyl-3,4-dimethyl-pyrrole-2,5-dione (201.2 g; 1.169 mmol) was isolated in 94% yield and 96% purity. The product was stored at low temperature (4° C.).

[0100] 1 H-NMR (400.17MHz, DMSO, δ, ppm): 1.92 (s, 6H, CH3); 4.01 (dt, 3 J HH =5.1Hz, 4 J HH =1.7,2H,CH2);5.05(ddt, 3 J trans-HH =17.1Hz, 2 J HH =3.1Hz, 4 J HH =1.5Hz, 1H, CH2=CH);5.08(ddt, 3 J cis-HH =10.3Hz, 2 J HH =3.1Hz, 4 J HH =1.5Hz, 1H, CH2=CH);5.79(ddt, 3 J trans-HH =17.1Hz,3 J cis-HH =10.3Hz, 3 J HH =5.1Hz, 1H, CH2=CH). 13 C-NMR (100.62MHz, CDCl3, δ, ppm): 8.62(q, 1 J CH = 129.5Hz, CH3); 39.92(td, 1 J CH =140.3Hz, 2 J CH =8.0Hz, 2 J CH =5.5Hz,CH2);117.18(ddt, 1 J CH =159.4Hz, 1 J CH =155.3Hz, 3 J CH =5.5Hz,CH2);132.01(dtd, 1 J CH =157.7Hz, 2 J CH =5.5Hz, 2 J CH = 3.0Hz, CH); 137.18(qq, 2 J CH =7.5Hz, 3 J CH =5.7Hz, C=C);171.6(m, C=O).

[0101] 3,4-Dimethyl-1-(3-triethoxysilylpropyl)pyrrole-2,5-dione (DMMI): [ka] A 500 mL round bottom flask equipped with a reflux condenser was charged with pale yellow liquid 1-allyl-3,4-dimethyl-pyrrole-2,5-dione (100.0 g; 851.2 mmol; 1.0 equiv.) and platinum(IV) oxide (25.0 mg; 0.110 mmol, 1.15 equiv.) and triethoxysilane (129.9 g; 668.3 mmol; 1.15 equiv.) were added with vigorous stirring at room temperature. The solution was warmed (80° C.) and stirred at 80° C. for 190 hours. The reaction was completed by1 The reaction was monitored by H NMR spectroscopy. The solution was then cooled to room temperature. Chloroform (100 mL) and activated carbon (8.0 g) were added and stirred at room temperature for 1 h. The suspension was then filtered (paper filter and 0.45 μm PTFE filter) and the mother liquor was distilled at 60 °C under reduced pressure (20 mbar) to remove the solvent. The product 3,4-dimethyl-1-(3-triethoxysilylpropyl)pyrrole-2,5-dione (162 g) was isolated as a clear, light brown liquid. After fractional condensation at 130-140 °C under reduced pressure (0.2-0.35 mbar), the clear, deep yellow substance beta 3,4-dimethyl-1-(2-triethoxysilylpropyl)pyrrole-2,5-dione (11.93 g; 36.2 mmol) was isolated in 6.2% yield and 96% purity. The desired product, gamma 3,4-dimethyl-1-(3-triethoxysilylpropyl)pyrrole-2,5-dione (147.6 g; 448 mmol), was isolated in 77% yield and 99% purity as a clear, colorless liquid at 160° C. under reduced pressure (0.2 mbar). This material was stored at low temperature (4° C.).

[0102] 1 H-NMR (400.17MHz, CD3CN film, δ, ppm): -0.05(m, 2H, CH2); 0.61(t, 3 J HH =7.0Hz,9H,CH3);1.04(tt, 3 J HH =7.3Hz, 3 J HH = Resolution T 1 / 2 =2.5Hz, 2H, CH2);1.36(s, 6H, CH3);2.85(t, 3 J HH = 7.3, 2H, CH2); 3.21(q, 3 J HH =7.0Hz, 6H, CH2). 13 C-NMR (100.62MHz, CD3CNfilm, δ, ppm): 6.69(tt, 1 J CH =117.1Hz, 2 J CH = 2.9Hz, CH2); 6.97(q, 1 JCH =128.9Hz,CH3);17.08(qt, 1 J CH =125.8Hz, 2 J CH = 2.3Hz, CH3);21.19(tc, 1 J CH =128.8Hz, 2 J CH = Resolution T1 / 2 = 12Hz, CH2);39.10(tt, 1 J CH =139.7Hz, 2 J CH = 4.4Hz, CH2); 57.04(tq, 1 J CH =141.8Hz, 2 J CH =4.5Hz, CH2);135.65(qq, 2 J CH =7.5Hz, 3 J CH =5.7Hz, C=C);170.33(m, C=O). 29 Si 1 H}-NMR (79.5MHz, CDCl3, δ, ppm): -46.0(s).

[0103] Synthesis of Siloxane Polymers Example 1 - MDMMIQ-5030: Methyltrimethoxysilane (6.80 g, 50.0 mmol), tetraethylorthosilicate (4.12 g, 20.00 mmol), 3,4-dimethyl-1-(3-triethoxysilylpropyl)pyrrole-2,5-dione (9.84 g, 30.00 mmol), and propan-2-ol (14.0 g) were charged to a reaction vessel and purged with nitrogen. Tetramethylammonium hydroxide (10.2 g, 28.0 mmol, 25% in water) was added dropwise to the reaction over 5 minutes with rapid stirring. The temperature was controlled at <25° C. during the addition. The reaction was stirred at 23° C. under nitrogen for 2 hours. The reaction mixture was poured into a rapidly stirred second flask containing deionized water (14.0 g), 35% hydrochloric acid (3.07 g, 29.4 mmol), and n-propyl acetate (50.0 g). The mixture was stirred at 23° C. for 1 hour, then the aqueous phase was removed. The organic phase was washed with deionized water (30.0 g) and then concentrated under reduced pressure to approximately 15 cm 3 Propan-2-ol (20 g) was added to the organic phase and the solution was concentrated under reduced pressure to give Siloxane 1 (18.3 g, 39 wt % in propan-2-ol). GPC (THF, 40° C.): M w = 2,255 g / mol.

[0104] Example 2 - MDMMIQ-5040: Methyltrimethoxysilane (6.80 g, 50.0 mmol), tetraethylorthosilicate (2.08 g, 10.0 mmol), 3,4-dimethyl-1-(3-triethoxysilylpropyl)pyrrole-2,5-dione (13.16 g, 40.0 mmol), and propan-2-ol (14.0 g) were charged to a reaction vessel and purged with nitrogen. Tetramethylammonium hydroxide (10.9 g, 30.0 mmol, 25% in water) was added dropwise to the reaction over 5 minutes with rapid stirring. The temperature was controlled at <25° C. during the addition. The reaction was stirred at 23° C. under nitrogen for 2 hours. The reaction mixture was poured into a rapidly stirred second flask containing deionized water (14.0 g), 35% hydrochloric acid (3.29 g, 31.5 mmol), and n-propyl acetate (50.0 g). The mixture was stirred at 23° C. for 1 hour, then the aqueous phase was removed. The organic phase was washed with deionized water (30.0 g) and then concentrated under reduced pressure to approximately 15 cm 3 Propan-2-ol (20 g) was added to the organic phase and the solution was concentrated under reduced pressure to give Siloxane 2 (22.7 g, 39 wt % in propan-2-ol). GPC (THF, 40° C.): M w = 1,614 g / mol.

[0105] Example 3 - MDMMIQ-6010: Methyltrimethoxysilane (8.16 g, 60.0 mmol), tetraethylorthosilicate (6.24 g, 30.0 mmol), 3,4-dimethyl-1-(3-triethoxysilylpropyl)pyrrole-2,5-dione (3.29 g, 10.0 mmol), and propan-2-ol (14.0 g) were charged to a reaction vessel and purged with nitrogen. Tetramethylammonium hydroxide (5.21 g, 14.3 mmol, 25% in water) was added dropwise to the reaction over 5 minutes with rapid stirring. The temperature was controlled at <25° C. during the addition. The reaction was stirred at 23° C. under nitrogen for 2 hours. The reaction mixture was poured into a rapidly stirred second flask containing deionized water (14.0 g), 35% hydrochloric acid (1.57 g, 15.0 mmol), and n-propyl acetate (50.0 g). The mixture was stirred at 23° C. for 1 hour, then the aqueous phase was removed. The organic phase was washed with deionized water (30.0 g) and then concentrated under reduced pressure to approximately 15 cm3 Propan-2-ol (20 g) was added to the organic phase and the solution was concentrated under reduced pressure to give Siloxane 3 (15.5 g, 39 wt % in propan-2-ol). GPC (THF, 40° C.): M w = 6,160 g / mol.

[0106] Example 4 - MDMMIQ-8010: Methyltrimethoxysilane (10.9 g, 80.0 mmol), tetraethylorthosilicate (2.08 g, 10.0 mmol), 3,4-dimethyl-1-(3-triethoxysilylpropyl)pyrrole-2,5-dione (3.29 g, 10.0 mmol), and propan-2-ol (14.0 g) were charged to a reaction vessel and purged with nitrogen. Tetramethylammonium hydroxide (11.0 g, 30 mmol, 25% in water) was added dropwise to the reaction over 5 minutes with rapid stirring. The temperature was controlled at <25° C. during the addition. The reaction was stirred at 23° C. under nitrogen for 2 hours. The reaction mixture was poured into a rapidly stirred second flask containing deionized water (14.0 g), 35% hydrochloric acid (3.29 g, 31.5 mmol), and n-propyl acetate (50.0 g). The mixture was stirred at 23° C. for 1 hour, then the aqueous phase was removed. The organic phase was washed with deionized water (30.0 g) and then concentrated under reduced pressure to approximately 15 cm 3 Propan-2-ol (20 g) was added to the organic phase and the solution was concentrated under reduced pressure to give Siloxane 4 (14.5 g, 39 wt % in propan-2-ol). GPC (THF, 40° C.): M w = 1,986 g / mol.

[0107] Example 5 - MPDMMIQ-502010: Methyltrimethoxysilane (6.80 g, 50.0 mmol), phenyltrimethoxysilane (3.96 g, 20.0 mmol), tetraethylorthosilicate (4.16 g, 20.0 mmol), 3,4-dimethyl-1-(3-triethoxysilylpropyl)pyrrole-2,5-dione (3.29 g, 10.0 mmol), and propan-2-ol (14.0 g) were charged to a reaction vessel and purged with nitrogen. Tetramethylammonium hydroxide (10.9 g, 30 mmol, 25% in water) was added dropwise to the reaction over 5 minutes with rapid stirring. The temperature was controlled at <25° C. during the addition. The reaction was stirred under nitrogen at 23° C. for 2 hours. The reaction mixture was poured into a rapidly stirred second flask containing deionized water (14.0 g), 35% hydrochloric acid (3.29 g, 31.5 mmol), and n-propyl acetate (50.0 g). The mixture was stirred at 23° C. for 1 hour, then the aqueous phase was removed. The organic phase was washed with deionized water (30.0 g) and then concentrated under reduced pressure to approximately 15 cm 3 Propan-2-ol (20 g) was added to the organic phase and the solution was concentrated under reduced pressure to give Siloxane 5 (20.5 g, 39 wt % in propan-2-ol). GPC (THF, 40° C.): M w = 2,033 g / mol.

[0108] Example 6 - MPDMMIQ-503010: Methyltrimethoxysilane (6.80 g, 50.0 mmol), tetraethylorthosilicate (2.08 g, 10.0 mmol), phenyltrimethoxysilane (5.95 g, 30.0 mmol), 3,4-dimethyl-1-(3-triethoxysilylpropyl)pyrrole-2,5-dione (3.29 g, 10.0 mmol), and propan-2-ol (14.0 g) were charged to a reaction vessel and purged with nitrogen. Tetramethylammonium hydroxide (10.9 g, 30 mmol, 25% in water) was added dropwise to the reaction over 5 minutes with rapid stirring. The temperature was controlled at <25° C. during the addition. The reaction was stirred under nitrogen at 23° C. for 2 hours. The reaction mixture was poured into a rapidly stirred second flask containing deionized water (14.0 g), 35% hydrochloric acid (3.31 g, 31.5 mmol), and n-propyl acetate (50.0 g). The mixture was stirred at 23° C. for 1 hour, then the aqueous phase was removed. The organic phase was washed with deionized water (30.0 g) and then concentrated under reduced pressure to approximately 15 cm 3 Propanepropan-2-ol (20 g) was added to the organic phase and the solution was concentrated under reduced pressure to give Siloxane 6 (15.7 g, 39 wt % in propan-2-ol). GPC (THF, 40° C.): M w = 1,899 g / mol.

[0109] Example 7 - MPDMMI-504010: Methyltrimethoxysilane (6.80 g, 50.0 mmol), phenyltrimethoxysilane (7.92 g, 40.0 mmol), 3,4-dimethyl-1-(3-triethoxysilylpropyl)pyrrole-2,5-dione (3.29 g, 10.0 mmol), and propan-2-ol (14.0 g) were charged to a reaction vessel and purged with nitrogen. Tetramethylammonium hydroxide (10.9 g, 30 mmol, 25% in water) was added dropwise to the reaction over 5 minutes with rapid stirring. The temperature was controlled at <25° C. during the addition. The reaction was stirred at 23° C. under nitrogen for 2 hours. The reaction mixture was poured into a rapidly stirred second flask containing deionized water (14.0 g), 35% hydrochloric acid (3.29 g, 31.5 mmol), and n-propyl acetate (50.0 g). The mixture was stirred at 23° C. for 1 hour, then the aqueous phase was removed. The organic phase was washed with deionized water (30.0 g) and then concentrated under reduced pressure to approximately 15 cm 3 Propan-2-ol (20 g) was added to the organic phase and the solution was concentrated under reduced pressure to give Siloxane 7 (23.1 g, 39 wt % in propan-2-ol). GPC (THF, 40° C.): M w = 1,626 g / mol.

[0110] Example 8 - MDMMIBe-503020: Methyltrimethoxysilane (6.80 g, 50.0 mmol), 1,2-bis(triethoxysilyl)ethane (7.09 g, 20.0 mmol), 3,4-dimethyl-1-(3-triethoxysilylpropyl)pyrrole-2,5-dione (9.84 g, 30.0 mmol), and propan-2-ol (14.0 g) were charged to a reaction vessel and purged with nitrogen. Tetramethylammonium hydroxide (7.64 g, 21.0 mmol, 25% in water) was added dropwise to the reaction over 5 minutes with rapid stirring. The temperature was controlled at <25° C. during the addition. The reaction was stirred under nitrogen at 23° C. for 2 hours. The reaction mixture was poured into a rapidly stirred second flask containing deionized water (14.0 g), 35% hydrochloric acid (2.30 g, 22.1 mmol), and n-propyl acetate (50.0 g). The mixture was stirred at 23° C. for 1 hour, then the aqueous phase was removed. The organic phase was washed with deionized water (30.0 g) and then concentrated under reduced pressure to approximately 15 cm 3 Propan-2-ol (20 g) was added to the organic phase and the solution was concentrated under reduced pressure to give Siloxane 8 (29.2 g, 39 wt % in propan-2-ol). GPC (THF, 40° C.): M w = 3,182 g / mol.

[0111] Example 9 - MPQ-5040-HA: (Reference Example) Methyltrimethoxysilane (6.80 g, 50.0 mmol), phenyltrimethoxysilane (7.92 g, 40.0 mmol), tetraethylorthosilicate (2.08 g, 10.0 mmol), and propan-2-ol (28.0 g) were charged to a reaction vessel and purged with nitrogen. Tetramethylammonium hydroxide (11.8 g, 32.4 mmol, 25% in water) was added dropwise to the reaction over 5 minutes with rapid stirring. The temperature was controlled at <25° C. during the addition. The reaction was stirred at 23° C. under nitrogen for 2 hours. The reaction mixture was poured into a rapidly stirred second flask containing deionized water (34.0 g), 35% hydrochloric acid (3.54 g, 34.0 mmol), and n-propyl acetate (34.0 g). The mixture was stirred at 23° C. for 1 hour and then the aqueous phase was removed. The organic phase was washed with deionized water (30.0 g) and then concentrated under reduced pressure to approximately 15 cm 3Propan-2-ol (20 g) was added to the organic phase and the solution was concentrated under reduced pressure to give Siloxane 9 (23.0 g, 39 wt % in propan-2-ol). GPC (THF, 40° C.): M w = 1,322 g / mol.

[0112] Example 10 - MPQ-5040-LA: (Reference Example) Methyltrimethoxysilane (6.80 g, 50.0 mmol), phenyltrimethoxysilane (7.92 g, 40.0 mmol), tetraethylorthosilicate (2.08 g, 10.0 mmol), and propan-2-ol (28.0 g) were charged to a reaction vessel and purged with nitrogen. Tetramethylammonium hydroxide (8.22 g, 22.6 mmol, 25% in water) was added dropwise to the reaction over 5 minutes with rapid stirring. The temperature was controlled at <25° C. during the addition. The reaction was stirred at 23° C. under nitrogen for 2 hours. The reaction mixture was poured into a rapidly stirred second flask containing deionized water (34.0 g), 35% hydrochloric acid (2.48 g, 23.7 mmol), and n-propyl acetate (34.0 g). The mixture was stirred at 23° C. for 1 hour, then the aqueous phase was removed. The organic phase was washed with deionized water (30.0 g) and then concentrated under reduced pressure to approximately 15 cm 3 Propan-2-ol (20 g) was added to the organic phase and the solution was concentrated under reduced pressure to give siloxane 10 (23.0 g, 39 wt % in propan-2-ol). GPC (THF, 40° C.): M w = 2,262 g / mol.

[0113] Photopatterning and Performance Photopatterning Substrates (glass or Si wafers) were cleaned according to standard methods with acetone and isopropyl alcohol for 10 min each with sequential ultrasonication. Each positive photoresist formulation (total solids content 20-40%) was applied to either 4-inch silicon wafers or glass substrates using spin coating (1,000-2,000 rpm) to obtain uniform films with target thicknesses of 1-3 μm. The resulting films were pre-baked at 100 °C for 90 s to evaporate the solvent (method step (1)). The dried coating films were then irradiated with 100-500 mJ / cm by broadband illumination corresponding to ghi line (wavelength: 365-436 nm) resist processing. 2 The pattern was exposed to a line width and space and a hole pattern shape (4 μm line width, 12 μm space) with 1000 mJ / cm 2 at 1000 s (method step (2a)). It was then subjected to puddle development using a 2.38% TMAH aqueous solution for 120 s and rinsed with pure water for an additional 60 s (method step (2b)). After drying, the taper angle of the developed pattern was measured with a scanning electron microscope (SEM). The developed pattern was then subjected to a puddle development using a g+h+i line mask aligner with 1,000 mJ / cm 2 at 1000 s. 2 or 100mJ / cm with a 230nm UV lamp 2 The cured patterns were subjected to flood exposure at either 1000 nm or 1000 nm and then heated at 250° C. for 30 min in air or nitrogen. The cured patterns were observed by scanning electron microscopy (SEM) to measure their taper angles, while the linewidths of the patterns were observed by SEM after development and additionally after a post-bake step to measure the percentage increase in linewidth.

[0114] Adhesion to glass The cured patterns (see Photopatterning) together with the substrate were cut into smaller pieces, and the plastic studs and the cured film were bonded with a layer of epoxy resin. The studs were then pulled and the load at peeling was measured with a thin film adhesion tester, namely Romulus manufactured by Quad Group.

[0115] Photoresist formulations with photoacid generators (PAGs) Examples 101-106 and Reference Example 100: Positive photoresist formulations containing photoacid generators (PAGs) were prepared according to the compositions shown in Table 1. The amounts shown in the table are based on parts by weight and expressed as percentages (phr). Photoactivator: 4,4'-(1-(4-(1-(4-hydroxy-phenyl)-1-methylethyl)phenyl)ethylidene)bisphenol modified with 2.0 moles of naphthoquinone diazide sulfonic acid. Photoacid generator: 1,8-naphthalimidyl triflate (NAI-105 from Midori Chemical Co., Ltd.). Surfactant: diphenyldimethylsiloxane (KF-53 from Shin-Etsu Chemical Co., Ltd.). [Table 1]

[0116] As can be seen from the experimental results in Table 1, increasing the amount of the first and / or third repeat unit in the siloxane polymer suppresses the flow behavior (see Example 101, which contains siloxane 1 (MDMMIQ-5030) prepared with 20 parts of tetraethyl orthosilicate (TEOS); Example 104, which contains siloxane 7 (MPDMMI 504010) prepared without tetraethyl orthosilicate (TEOS); and Reference Example 100 (MPQ-5040-HA / LA)). Since TEOS (third repeat unit) crosslinks at a relatively low temperature (<120° C.), the photoresist formulation crosslinks faster than flow occurs. However, increasing the amount of TEOS results in a stiffer and more brittle film, which reduces the crack threshold of the cured photoresist coating. The DMMI containing repeat unit (first repeat unit) can be crosslinked by UV light in a flood exposure method step, so the resulting pattern is structurally fixed.

[0117] FIG. 2a shows the photoresist formulation of Reference Example 100 (MPQ-5040-HA / LA standard formulation) after development and post-bake. FIG. 2b shows the photoresist formulation of Example 101 after development and post-bake. The new DMMI containing siloxane polymer in the photoresist formulation of Example 101 provides excellent patterns, whereas the MPQ siloxane polymer in the photoresist formulation of Reference Example 100 deliquesces.

[0118] Additionally, photoresist formulations according to the invention have been found to exhibit improved adhesion to substrates (Example 104 containing Siloxane 7 (MPDMMI-504010) (34 MPa) and Reference Example 100 (MPQ-5040-HA / LA) (21 MPa)).

[0119] Improved photosensitivity Example 107 and Reference Example 101: Positive photoresist formulations were prepared according to the compositions shown in Table 2. The amounts shown in the table are based on parts by weight and expressed as percentages (phr). Photoactivator: 4,4'-(1-(4-(1-(4-hydroxy-phenyl)-1-methylethyl)phenyl)ethylidene)bisphenol modified with 2.0 moles of naphthoquinone diazide sulfonic acid. Photoacid generator: 1,8-naphthalimidyl triflate (NAI-105 from Midori Chemical Co., Ltd.). Surfactant: diphenyldimethylsiloxane (KF-53 from Shin-Etsu Chemical Co., Ltd.). [Table 2]

[0120] Additionally, the new DMMI containing siloxane polymers were compared to Example 102 (10 mJ / cm 2 ) containing the standard MPQ siloxane polymer (Siloxane 5 (MPDMMIQ-502010) 2 ) and Reference Example 101 (MPQ-5040-HA / LA) (133 mJ / cm 2 ) provides higher photosensitivity compared to Photosensitivity or light power time is very important because it improves the tact time of exposure. Formulations with higher photosensitivity require shorter exposure times and are especially suitable for thick film applications. They have a positive effect on the so-called taper angle and pattern shape. If the development rate between exposed and unexposed areas is fast, a more vertical pattern can be obtained, whereas a slow development rate reduces the film thickness and results in a taped pattern. The positive photoresist formulations of the present invention offer various possibilities to change or modify the shape and contrast of the resulting photopattern.

[0121] Photoresist formulations with photoacid generators (PAGs) Examples 201-205 and Reference Example 200: Positive photoresist formulations without a photoacid generator were prepared according to the compositions shown in Table 3. The amounts shown in the table are based on parts by weight and expressed as percentages (phr). Photoactivator: 4,4'-(1-(4-(1-(4-hydroxy-phenyl)-1-methylethyl)phenyl)ethylidene)bisphenol modified with 2.0 moles of naphthoquinone diazide sulfonic acid. Surfactant: diphenyldimethylsiloxane (KF-53 from Shin-Etsu Chemical Co., Ltd.). [Table 3]

[0122] The experimental results in Table 3 show that the positive photoresist formulations according to the present invention exhibit excellent performance even without the addition of a photoacid generator (PAG). The photoresist formulation of Example 204 is highly reactive due to the presence of repeat units derived from 1,2-bis(triethoxysilyl)ethane in the siloxane polymer (third repeat unit).

Claims

1. (a) a siloxane polymer comprising a first repeat unit and a second repeat unit; and (b) a photoactivatable dissolution modifier selected from diazonaphthoquinone (DNQ) or a derivative thereof; A positive photoresist formulation comprising: A positive photoresist formulation, wherein the first repeat unit comprises at least one maleimide group and the second repeat unit comprises no maleimide groups.

2. The first repeat unit has the following formula (1): 【Chemistry 1】 Formula (1) and wherein the first siloxane monomer is represented by During the ceremony, L 1 , L 2 , and L 3 are the same or different and are each independently selected from R, OR, and halogen; L 1 , L 2 , and L 3 at least one of is OR or halogen; R is selected from the group consisting of H, linear alkyl having 1 to 30 carbon atoms, branched alkyl having 3 to 30 carbon atoms, cyclic alkyl having 3 to 30 carbon atoms, and aryl having 6 to 20 carbon atoms, and has one or more non-adjacent and non-terminal CH 2 The groups are -O-, -S-, -C(=O)-, -C(=S)-, -C(=O)-O-, -O-C(=O)-, -NR 0 --, --SiR 0 R 00 -, -CF 2 -, -CR 0 =CR 00 -, -CY 1 = C.Y. 2 - or -C≡C-, and one or more H atoms may be replaced by F; R 1 and R 2 are the same or different and are each independently selected from H, alkyl having 1 to 20 carbon atoms, cycloalkyl having 3 to 20 carbon atoms, and aryl having 6 to 20 carbon atoms, wherein one or more H atoms may be replaced by F, or R 1 and R 2 together form a monocyclic or polycyclic organic ring system, one or more H atoms may be replaced by F, Z represents a linear alkylene group having 1 to 20 carbon atoms, a branched alkylene group having 3 to 20 carbon atoms, or a cyclic alkylene group having 3 to 20 carbon atoms, and has one or more non-adjacent and non-terminal CH 2 The groups are -O-, -S-, -C(=O)-, -C(=S)-, -C(=O)-O-, -O-C(=O)-, -NR 0 --, --SiR 0 R 00 -, -CF 2 -, -CR 0 =CR 00 -, -CY 1 = C.Y. 2 - or -C≡C-, and one or more H atoms may be replaced by F; Y 1 and Y 2 are the same or different and are each independently selected from H, F, Cl, and CN; R 0 and R 00 are the same or different and are each independently selected from H, a straight chain alkyl having 1 to 20 carbon atoms, and a branched chain alkyl having 3 to 20 carbon atoms, which alkyl may be optionally fluorinated; the second siloxane monomer is different from the first siloxane monomer; 2. The positive photoresist formulation of claim 1.

3. Condition (1) or (2): (1) L 1 = L 2 = L 3 = OR, or (2) L 1 = L 2 = R and L 3 = Cl 3. The positive photoresist formulation of claim 2, wherein one of the following applies:

4. R 1 and R 2 are the same or different and are each independently selected from H, alkyl having 1 to 12 carbon atoms, cycloalkyl having 3 to 12 carbon atoms, and aryl having 6 to 14 carbon atoms, wherein one or more H atoms may be replaced by F, or R 1 and R 2 together form a monocyclic or polycyclic aliphatic ring system, a monocyclic or polycyclic aromatic ring system, or a polycyclic aliphatic and aromatic ring system, in which one or more H atoms are optionally replaced by F, A positive photoresist formulation according to claim 2 or 3.

5. The second repeat unit has the following structure S1 or S2: 【Chemistry 2】 The second siloxane monomer is represented by one of During the ceremony, L 11 , L 12 , and L 13 are the same or different and are each independently selected from OR′ and halogen; R' is selected from the group consisting of linear alkyl having 1 to 30 carbon atoms, branched alkyl having 3 to 30 carbon atoms, cyclic alkyl having 3 to 30 carbon atoms, and aryl having 6 to 20 carbon atoms, and has one or more non-adjacent and non-terminal CH 2 The groups are -O-, -S-, -C(=O)-, -C(=S)-, -C(=O)-O-, -O-C(=O)-, -NR 0 --, --SiR 0 R 00 -, -CF 2 -, -CR 0 =CR 00 -, -CY 1 = C.Y. 2 - or -C≡C-, and one or more H atoms may be replaced by F; R 11 and R 12 are the same or different and each independently selected from the group consisting of H, a straight chain alkyl having 1 to 30 carbon atoms, a branched chain alkyl having 3 to 30 carbon atoms, a cyclic alkyl having 3 to 30 carbon atoms, and an aryl having 6 to 20 carbon atoms, which are selected from the group consisting of -O-, -S-, -C(=O)-, -C(=S)-, -C(=O)-O-, -O-C(=O)-, -NR 0 --, --SiR 0 R 00 -, -CF 2 -, -CR 0 =CR 00 -, -CR 0 =CR 00 2 , -CY 1 = C.Y. 2 -, -C≡C-, and one or more H atoms may be replaced by F; R 0 , R 00 , Y 1 , and Y 2 is defined as in claim 2, A positive photoresist formulation according to any one of claims 1 to 4.

6. The second siloxane monomer has the following structure S1: 【Chemistry 3】 is represented by During the ceremony, L 11 , L 12 , and L 13 are the same or different from each other and are each independently selected from OR′; R′ is and selected from the group consisting of linear alkyl having 1 to 20, preferably 1 to 12, carbon atoms, branched alkyl having 3 to 20, preferably 3 to 12, carbon atoms, cyclic alkyl having 3 to 20, preferably 3 to 12, carbon atoms, and aryl having 6 to 14 carbon atoms, and having one or more non-adjacent and non-terminal CH 2 The groups are -O-, -S-, -C(=O)-, -C(=S)-, -C(=O)-O-, -O-C(=O)-, -NR 0 --, --SiR 0 R 00 -, -CF 2 -, -CR 0 =CR 00 -, -CY 1 = C.Y. 2 - or -C≡C-, and one or more H atoms may be replaced by F; R 11 is selected from the group consisting of H, linear alkyl having 1 to 20, preferably 1 to 12 carbon atoms, branched alkyl having 3 to 20, preferably 3 to 12 carbon atoms, cyclic alkyl having 3 to 20, preferably 3 to 12 carbon atoms, and aryl having 6 to 14 carbon atoms, which are represented by -O-, -S-, -C(=O)-, -C(=S)-, -C(=O)-O-, -O-C(=O)-, -NR 0 --, --SiR 0 R 00 -, -CF 2 -, -CR 0 =CR 00 -, -CR 0 =CR 00 2 , -CY 1 = C.Y. 2 -, -C≡C-, and one or more H atoms may be replaced by F; R 0 , R 00 , Y 1 , and Y 2 is defined as in claim 2, 6. The positive photoresist formulation of claim 5.

7. R' is selected from the group consisting of straight chain alkyl having 1 to 12 carbon atoms, branched chain alkyl having 3 to 12 carbon atoms, cyclic alkyl having 3 to 12 carbon atoms, and aryl having 6 to 14 carbon atoms; R 11 is -CH 3 , -CF 3 , -C 2 H 5 , -C 2 F 5 , -C 3 H 7 , -C 3 F 7 , -C 4 H 9 , -C 4 F 9 , -C 5 H 11 , -C 5 H 4 F 7 , -C 6 H 13 , -C 6 H 4 F 9 , -C 7 H 15 , -C 7 H 4 F 11 , -C 8 H 17 , -C 8 H 4 F 13 , -CH=CH 2 , -C(CH 3 ) = CH 2 , -C 3 H 6 -OC(=O)-CH=CH 2 , -C 3 H 6 -OC(=O)-C(CH 3 ) = CH 2 , -C 6 H 5 , and -C 6 F 5 Selected from the group consisting of:

7. The positive photoresist formulation of claim 6.

8. The positive photoresist formulation of any one of claims 1 to 7, wherein the siloxane polymer further comprises a third repeat unit, the third repeat unit being free of a maleimide group.

9. The third repeat unit has the following structure T1 or T2: 【Chemistry 4】 and a third siloxane monomer represented by one of: During the ceremony, L 21 , L 22 , L 23 , and L 24 are the same or different and are each independently selected from OR″ and halogen; R″ is selected from the group consisting of linear alkyl having 1 to 30 carbon atoms, branched alkyl having 3 to 30 carbon atoms, cyclic alkyl having 3 to 30 carbon atoms, and aryl having 6 to 20 carbon atoms, and has one or more non-adjacent and non-terminal CH 2 The groups are -O-, -S-, -C(=O)-, -C(=S)-, -C(=O)-O-, -O-C(=O)-, -NR 0 --, --SiR 0 R 00 -, -CF 2 -, -CR 0 =CR 00 -, -CY 1 = C.Y. 2 - or -C≡C-, and one or more H atoms may be replaced by F; Z is absent or represents a linear alkylene group having 1 to 20 carbon atoms, a branched alkylene group having 3 to 20 carbon atoms, or a cyclic alkylene group having 3 to 20 carbon atoms, and has one or more non-adjacent and non-terminal CH 2 The groups are -O-, -S-, -C(=O)-, -C(=S)-, -C(=O)-O-, -O-C(=O)-, -NR 0 --, --SiR 0 R 00 -, -CF 2 -, -CR 0 =CR 00 -, -CY 1 = C.Y. 2 - or -C≡C-, and one or more H atoms may be replaced by F; R 0 , R 00 , Y 1 , and Y 2 is defined as in claim 2, 9. The positive photoresist formulation of claim 8.

10. The third siloxane monomer has the following structure T1: 【Chemistry 5】 is represented by During the ceremony, L 21 , L 22 , L 23 , and L 24 are the same or different from each other and are each independently selected from OR″; R″ is selected from the group consisting of linear alkyl having 1 to 20, preferably 1 to 12 carbon atoms, branched alkyl having 3 to 20, preferably 3 to 12 carbon atoms, cyclic alkyl having 3 to 20, preferably 3 to 12 carbon atoms, and aryl having 6 to 14 carbon atoms, and has one or more non-adjacent and non-terminal CH 2 The groups are -O-, -S-, -C(=O)-, -C(=S)-, -C(=O)-O-, -O-C(=O)-, -NR 0 --, --SiR 0 R 00 -, -CF 2 -, -CR 0 =CR 00 -, -CY 1 = C.Y. 2 - or -C≡C-, and one or more H atoms may be replaced by F; R 0 , R 00 , Y 1 , and Y 2 is defined as in claim 2, 10. The positive photoresist formulation of claim 9.

11. The third siloxane monomer has the following structure T2: 【Chemistry 6】 is represented by During the ceremony, L 21 , L 22 , and L 23 are the same or different from each other and are each independently selected from OR″; R″ is selected from the group consisting of linear alkyl having 1 to 20, preferably 1 to 12 carbon atoms, branched alkyl having 3 to 20, preferably 3 to 12 carbon atoms, cyclic alkyl having 3 to 20, preferably 3 to 12 carbon atoms, and aryl having 6 to 14 carbon atoms, and has one or more non-adjacent and non-terminal CH 2 The groups are -O-, -S-, -C(=O)-, -C(=S)-, -C(=O)-O-, -O-C(=O)-, -NR 0 --, --SiR 0 R 00 -, -CF 2 -, -CR 0 =CR 00 -, -CY 1 = C.Y. 2 - or -C≡C-, and one or more H atoms may be replaced by F; Z is absent or represents a linear alkylene group having 1 to 12 carbon atoms, a branched alkylene group having 3 to 12 carbon atoms, or a cyclic alkylene group having 3 to 12 carbon atoms, and has one or more non-adjacent and non-terminal CH 2 The groups are -O-, -S-, -C(=O)-, -C(=S)-, -C(=O)-O-, -O-C(=O)-, -NR 0 --, --SiR 0 R 00 -, -CF 2 -, -CR 0 =CR 00 -, -CY 1 = C.Y. 2 - or -C≡C-, and one or more H atoms may be replaced by F; R 0 , R 00 , Y 1 , and Y 2 is defined as in claim 2, 10. The positive photoresist formulation of claim 9.

12. The siloxane polymer further comprises one or more additional repeat units, the one or more additional repeat units being free of a maleimide group and preferably having the following structure F1: 【Chemistry 7】 and from one or more additional siloxane monomers represented by During the ceremony, L 31 , L 32 , and L 33 are the same or different and are each independently selected from OR'' and halogen; R''' is selected from the group consisting of linear alkyl having 1 to 30 carbon atoms, branched alkyl having 3 to 30 carbon atoms, cyclic alkyl having 3 to 30 carbon atoms, and aryl having 6 to 20 carbon atoms, and has one or more non-adjacent and non-terminal CH 2 The groups are -O-, -S-, -C(=O)-, -C(=S)-, -C(=O)-O-, -O-C(=O)-, -NR 0 --, --SiR 0 R 00 -, -CF 2 -, -CR 0 =CR 00 -, -CY 1 = C.Y. 2 - or -C≡C-, and one or more H atoms may be replaced by F; R 31 is selected from the group consisting of H, linear alkyl having 1 to 30 carbon atoms, branched alkyl having 3 to 30 carbon atoms, cyclic alkyl having 3 to 30 carbon atoms, and aryl having 6 to 20 carbon atoms, which are represented by -O-, -S-, -C(=O)-, -C(=S)-, -C(=O)-O-, -O-C(=O)-, -NR 0 --, --SiR 0 R 00 -, -CF 2 -, -CR 0 =CR 00 -, -CR 0 =CR 00 2 , -CY 1 = C.Y. 2 -, -C≡C-, and one or more H atoms may be replaced by F; R 0 , R 00 , Y 1 , and Y 2 is defined as in claim 2, A positive photoresist formulation according to any one of claims 1 to 11.

13. 13. The positive photoresist formulation of any one of claims 1 to 12, wherein the mole fraction of the first repeat unit in the siloxane polymer ranges from 1 to 90%, based on the total amount of repeat units in the siloxane polymer.

14. 14. The positive photoresist formulation of any one of claims 1 to 13, wherein the mole fraction of the second repeat unit in the siloxane polymer ranges from 10 to 90%, based on the total amount of repeat units in the siloxane polymer.

15. The positive photoresist formulation of any one of claims 8 to 11, wherein the mole fraction of the third repeat unit in the siloxane polymer is from 5 to 40%, based on the total amount of repeat units in the siloxane polymer.

16. A positive photoresist formulation according to any one of the preceding claims, comprising one or more further siloxane polymers, said further siloxane polymers being free of maleimide groups.

17. 1. A method for manufacturing a microelectronic structure, comprising: (1) applying a positive photoresist formulation according to any one of claims 1 to 16 to a surface of a substrate; (2) photopatterning the positive photoresist formulation applied in step (1) to obtain a photopatterned structure; and (3) curing the photopatterned structure resulting from step (2) to obtain a hardened photopatterned dielectric material on the surface of the substrate. The method includes:

18. An electronic device comprising a microelectronic structure obtainable by the manufacturing method according to claim 17.

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