Detection device

Abstract

To provide a detection device by which the parasitic capacitance that affects each photodiode can be homogenized.SOLUTION: A detection device includes a substrate including a sensor region, and a plurality of optical sensors arranged in a first direction and a second direction in the sensor region. The substrate includes a plurality of readout control scan lines extending in the first direction in the sensor region, and a plurality of output signal lines extending in the second direction in the sensor region. The optical sensors include a plurality of dummy elements including a first photodiode and arranged along an outer frame of the sensor region, and a plurality of detection elements including a second photodiode and disposed inside an annular dummy region where the dummy elements are disposed. The dummy element is not connected to the readout control scan line or the output signal line. When the detection element is connected to the readout control scan line and the output signal line and receives a readout control signal, the detection element outputs a signal generated by the first photodiode to the output signal line.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to a detection device. [Background technology]

[0002] The liquid crystal display device of Patent Document 1 includes a plurality of optical sensors. The optical sensor has a photodiode, and light irradiated by the photodiode is converted into a signal (electric charge). The optical sensors are generally arranged in a matrix. The plurality of optical sensors arranged in a matrix are used in a detection device as a biosensor for detecting biometric information, such as a fingerprint sensor or a vein sensor. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2010-277378 A Summary of the Invention [Problem to be solved by the invention]

[0004] Photodiodes have parasitic capacitance. In addition, photodiodes are affected by the parasitic capacitance of adjacent photodiodes. In a plurality of optical sensors arranged in a matrix, the photodiode located in the center is surrounded by many photodiodes and is affected by a large amount of parasitic capacitance. On the other hand, among the plurality of optical sensors arranged in a matrix, the photodiode located at the edge is surrounded by fewer photodiodes. Therefore, the parasitic capacitance affected by the photodiode located in the center is different from that of the photodiode located at the edge.

[0005] An object of the present invention is to provide a detection device capable of equalizing the parasitic capacitance to which each photodiode is influenced. [Means for solving the problem]

[0006] A detection device according to one embodiment of the present invention includes a substrate having a sensor region and a plurality of optical sensors arranged in a first direction and a second direction perpendicular to the first direction within the sensor region, the substrate having a plurality of read control scanning lines extending in the first direction within the sensor region and transmitting a read control signal, and a plurality of output signal lines extending in the second direction within the sensor region, the plurality of optical sensors including a plurality of dummy elements having a first photodiode and arranged along an outer frame of the sensor region, and a plurality of detection elements having a second photodiode and arranged inside a ring-shaped dummy region in which the plurality of dummy elements are arranged, the dummy elements being unconnected to the read control scanning lines and the output signal line, and the detection elements being connected to the read control scanning lines and the output signal line, and outputting a signal generated by the first photodiode to the output signal line when a read control signal is received. [Brief description of the drawings]

[0007] [Figure 1A] FIG. 1A is a cross-sectional view showing a schematic cross-sectional configuration of a detection instrument with an illumination device having a detection device according to an embodiment. [Figure 1B] FIG. 1B is a cross-sectional view showing a schematic cross-sectional configuration of a detection instrument with an illumination device having a detection device according to Modification 1. As shown in FIG. [Figure 1C] FIG. 1C is a cross-sectional view showing a schematic cross-sectional configuration of a detection instrument with an illumination device having a detection device according to Modification 2. As shown in FIG. [Figure 1D] FIG. 1D is a cross-sectional view showing a schematic cross-sectional configuration of a detection instrument with an illumination device having a detection device according to Modification 3. As shown in FIG. [Diagram 2] FIG. 2 is a plan view showing the detection device according to the embodiment. [Diagram 3] FIG. 3 is an enlarged plan view of a portion of the substrate according to the embodiment. [Figure 4] FIG. 4 is a block diagram illustrating an example of the configuration of the detection device according to the embodiment. [Diagram 5] FIG. 5 is a circuit diagram showing a detection element. [Figure 6]FIG. 6 is a circuit diagram showing a dummy element. [Figure 7] FIG. 7 is a plan view showing the detection element. [Figure 8] FIG. 8 is a plan view showing a dummy element. [Figure 9] FIG. 9 is a cross-sectional view of the detection element, specifically, a cross-sectional view taken along line IX-IX' in FIG. [Figure 10] FIG. 10 is a cross-sectional view of the dummy element, specifically, a cross-sectional view taken along the line XX' of FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] The form (embodiment) for carrying out the invention will be described in detail with reference to the drawings. The present invention is not limited to the contents described in the following embodiment. The components described below include those that a person skilled in the art can easily imagine and those that are substantially the same. Furthermore, the components described below can be appropriately combined. Note that the disclosure is merely an example, and those that a person skilled in the art can easily imagine appropriate modifications while maintaining the gist of the invention are naturally included in the scope of the present invention. In addition, in order to make the explanation clearer, the drawings may be schematic in terms of the width, thickness, shape, etc. of each part compared to the actual embodiment, but they are merely examples and do not limit the interpretation of the present invention. In addition, in this specification and each figure, elements similar to those described above with respect to the previous figures may be given the same reference numerals, and detailed explanations may be omitted as appropriate.

[0009] In this specification and the claims, when expressing an aspect of arranging another structure on top of a certain structure, the term "on top" is used, unless otherwise specified, to include both a case in which another structure is arranged directly on top of a certain structure so as to be in contact with the certain structure, and a case in which another structure is arranged above a certain structure via yet another structure.

[0010] (Embodiment) Fig. 1A is a cross-sectional view showing a schematic cross-sectional configuration of a detector with an illumination device having a detector according to an embodiment. Fig. 1B is a cross-sectional view showing a schematic cross-sectional configuration of a detector with an illumination device having a detector according to a first modification. Fig. 1C is a cross-sectional view showing a schematic cross-sectional configuration of a detector with an illumination device having a detector according to a second modification. Fig. 1D is a cross-sectional view showing a schematic cross-sectional configuration of a detector with an illumination device having a detector according to a third modification.

[0011] 1A, the detection device with an illumination device 120 includes a detection device 1 and an illumination device 121. The detection device 1 includes a sensor substrate 5, an adhesive layer 125, and a cover member 122. That is, the sensor substrate 5, the adhesive layer 125, and the cover member 122 are laminated in this order in a direction perpendicular to the surface of the sensor substrate 5. Note that the cover member 122 of the detection device 1 can be replaced with an illumination device 121, as described later.

[0012] 1A, the illumination device 121 may be, for example, a so-called side-light type front light that uses a cover member 122 as a light guide plate provided at a position corresponding to the sensor area AA of the detection device 1 and has a plurality of light sources 123 arranged at one end or both ends of the cover member 122. That is, the cover member 122 has a light irradiation surface 121a that emits light, and is one component of the illumination device 121. According to this illumination device 121, light L1 is irradiated from the light irradiation surface 121a of the cover member 122 toward a finger Fg that is a detection target. For example, a light emitting diode (LED) that emits light of a predetermined color is used as the light source.

[0013] Furthermore, as shown in FIG. 1B, the illumination device 121 may have a light source (e.g., an LED) provided directly below the detection area AA of the detection device 1, and the illumination device 121 equipped with a light source also functions as a cover member 122.

[0014] Furthermore, the lighting device 121 is not limited to the example of FIG. 1B, and may be provided to the side or above the cover member 122 as shown in FIG. 1C, and light L1 may be irradiated onto the finger Fg from the side or above the finger Fg.

[0015] Furthermore, as shown in FIG. 1D, the illumination device 121 may be a so-called direct backlight having a light source (for example, an LED) provided in the detection area of ​​the detection device 1.

[0016] Light L1 emitted from the lighting device 121 is reflected as light L2 by a finger Fg, which is a detection target. The detection device 1 detects the light L2 reflected by the finger Fg to detect unevenness (e.g., a fingerprint) on the surface of the finger Fg. Furthermore, in addition to detecting a fingerprint, the detection device 1 may detect information about a living body by detecting the light L2 reflected inside the finger Fg. The information about a living body may be, for example, an image of blood vessels such as veins, a pulse rate, a pulse wave, etc. The color of the light L1 from the lighting device 121 may be different depending on the detection target.

[0017] The cover member 122 is a member for protecting the sensor substrate 5, and covers the sensor substrate 5. As described above, the illumination device 121 may also serve as the cover member 122. In a structure in which the cover member 122 is separated from the illumination device 121 as shown in FIGS. 1C and 1D, the cover member 122 is, for example, a glass substrate. Note that the cover member 122 is not limited to a glass substrate, and may be a resin substrate or the like. Also, the cover member 122 may not be provided. In this case, a protective layer such as an insulating film is provided on the surface of the sensor substrate 5, and the finger Fg comes into contact with the protective layer of the detection device 1.

[0018] As shown in FIG. 1B, the detection device 120 with the illumination device may be provided with a display panel instead of the illumination device 121. The display panel may be, for example, an organic EL display panel (OLED: Organic Light Emitting Diode) or an inorganic EL display (micro LED, mini LED). Alternatively, the display panel may be a liquid crystal display panel (LCD: Liquid Crystal Display) using liquid crystal elements as display elements, or an electrophoretic display panel (EPD: Electrophoretic Display) using electrophoretic elements as display elements. Even in this case, it is possible to detect information about the fingerprint and biometric information of the finger Fg based on the light L2 that is obtained by reflecting display light (light L1) emitted from the display panel and reflected by the finger Fg.

[0019] Fig. 2 is a plan view showing a detection device according to an embodiment. Note that the first direction Dx shown in Fig. 2 and subsequent figures is one direction in a plane parallel to the substrate 21 (sensor area AA). The second direction Dy is one direction in a plane parallel to the substrate 21 (sensor area AA) and is a direction perpendicular to the first direction Dx. The third direction Dz is a direction perpendicular to the first direction Dx and the second direction Dy, and is a normal direction of the substrate 21.

[0020] As shown in FIG. 2, the detection device 1 includes an array substrate 2 (substrate 21), a sensor unit 10, a scanning line driving circuit 15, a signal line selection circuit 16, a detection circuit 48, a control circuit 102, and a power supply circuit 103.

[0021] The control board 101 is electrically connected to the board 21 via the wiring board 110. The wiring board 110 is, for example, a flexible printed circuit board or a rigid board. The wiring board 110 is provided with a detection circuit 48. The control board 101 is provided with a control circuit 102 and a power supply circuit 103. The control circuit 102 is, for example, an FPGA (Field Programmable Gate Array). The control circuit 102 supplies control signals to the sensor unit 10, the scanning line driving circuit 15, and the signal line selection circuit 16, and controls the operation of the sensor unit 10. The power supply circuit 103 supplies voltage signals such as a power supply potential VDD and a reference potential VCOM (see FIG. 5) to the sensor unit 10, the scanning line driving circuit 15, and the signal line selection circuit 16. In the present embodiment, the case where the detection circuit 48 is disposed on the wiring board 110 is illustrated, but is not limited to this. The detection circuit 48 may be disposed on the board 21.

[0022] The substrate 21 has a sensor area AA and a peripheral area GA. The sensor area AA and the peripheral area GA extend in a plane direction parallel to the substrate 21. In the sensor area AA, each element (detection element 3A and dummy element 3B) of the sensor unit 10 is provided. The peripheral area GA is an area outside the sensor area AA, and is an area where each element (detection element 3A and dummy element 3B) is not provided. In other words, the peripheral area GA is an area between the outer periphery of the sensor area AA and the outer edge of the substrate 21. In the peripheral area GA, a scanning line driving circuit 15 and a signal line selection circuit 16 are provided. The scanning line driving circuit 15 is provided in an area of ​​the peripheral area GA extending along the second direction Dy. The signal line selection circuit 16 is provided in an area of ​​the peripheral area GA extending along the first direction Dx, and is provided between the sensor unit 10 and the detection circuit 48.

[0023] The sensor area AA has a detection area AA1 located in the center of the sensor area AA and an annular dummy area AA2 extending along the frame of the sensor area AA. The detection area AA1 is rectangular. The dummy area AA2 is rectangular and surrounds the detection area AA1. The detection area AA1 is provided with a detection element 3A that detects fingerprints, biological information, etc. The dummy area AA2 is provided with a dummy element 3B that does not detect fingerprints, etc.

[0024] 3 is a plan view of an enlarged portion of the substrate of the embodiment. As shown in FIG. 3, the substrate 21 has two scanning lines (a readout control scanning line GLrd and a reset control scanning line GLrst) and three signal lines (an output signal line SL, a power supply signal line SLsf, and a reset signal line SLrst). The readout control scanning line GLrd and the reset control scanning line GLrst are signal lines drawn from the scanning line driving circuit 15 into the sensor region AA. The readout control scanning line GLrd and the reset control scanning line GLrst each extend in the first direction Dx in the sensor region AA and are arranged side by side in the second direction Dy. The output signal line SL, the power supply signal line SLsf, and the reset signal line SLrst are signal lines drawn from the signal line selection circuit 16 into the sensor region AA. The output signal line SL, the power supply signal line SLsf, and the reset signal line SLrst each extend in the second direction Dy in the sensor region AA and are arranged side by side in the first direction Dx.

[0025] An area surrounded by two scanning lines and two signal lines is one pitch. In this embodiment, an area surrounded by two output signal lines SL spaced apart in the first direction Dx and two reset control scanning lines GLrst spaced apart in the second direction Dy is one pitch. Within this one pitch, one detection element 3A and one dummy element 3B of the sensor unit 10 are arranged. That is, the arrangement pitch Px in the first direction Dx in one pitch is determined by the arrangement pitch of the output signal lines SL. The arrangement pitch Py in the second direction Dy in one pitch is determined by the arrangement pitch of the reset control scanning lines GLrst. In addition, the dummy area AA2 in this embodiment is one pitch from the outer frame of the sensor area AA.

[0026] The sensor unit 10 has a plurality of detection elements 3A and a plurality of dummy elements 3B. The plurality of dummy elements 3B are provided in a dummy area AA2. In other words, the plurality of dummy elements 3B are arranged along the frame of the sensor area AA. On the other hand, the plurality of detection elements 3A are provided in a detection area AA1. That is, the plurality of detection elements 3A are arranged inside the annular dummy area AA2.

[0027] Both the detection element 3A and the dummy element 3B have a photoelectric conversion element 30. The photoelectric conversion element 30 is a photodiode, and outputs an electrical signal according to the light irradiated thereon. More specifically, the photoelectric conversion element 30 is a PIN (Positive Intrinsic Negative) photodiode. Hereinafter, the photoelectric conversion element 30 of the detection element 3A is referred to as the photoelectric conversion element 30A, and the photoelectric conversion element 30B of the dummy element 3B is referred to as the photoelectric conversion element 30B. The plurality of detection elements 3A and the plurality of dummy elements 3B may be collectively referred to as a plurality of optical sensors. The photoelectric conversion element 30B of the dummy element 3B may be referred to as a first photodiode. The photoelectric conversion element 30A of the detection element 3A may be referred to as a second photodiode.

[0028] The photoelectric conversion element 30A of the detection element 3A operates according to a gate drive signal (reset control signal RST, read control signal RD) supplied from the scanning line drive circuit 15. The photoelectric conversion element 30A outputs an electric signal corresponding to the light irradiated thereon as a detection signal Vdet to the signal line selection circuit 16. The detection device 1 detects information related to a living body based on the detection signals Vdet from the multiple photoelectric conversion elements 30. On the other hand, the photoelectric conversion element 30B of the dummy element 3B operates according to a gate drive signal (reset control signal RST) supplied from the scanning line drive circuit 15. The photoelectric conversion element 30B generates an electric signal corresponding to the light irradiated thereon, but is not connected to the signal line selection circuit 16 and does not output an electric signal to the signal line selection circuit 16.

[0029] Fig. 4 is a block diagram showing an example of the configuration of a detection device according to an embodiment. As shown in Fig. 4, the detection device 1 further includes a detection control circuit 11 and a detection unit 40. A part or all of the functions of the detection control circuit 11 are included in a control circuit 102. In addition, a part or all of the functions of the detection unit 40 other than the detection circuit 48 are included in the control circuit 102.

[0030] The detection control circuit 11 is a circuit that supplies control signals to the scanning line driving circuit 15, the signal line selection circuit 16, and the detection unit 40, respectively, and controls their operations. The detection control circuit 11 supplies various control signals, such as a start signal STV and a clock signal CK, to the scanning line driving circuit 15. The detection control circuit 11 also supplies various control signals, such as a selection signal ASW, to the signal line selection circuit 16.

[0031] The scanning line driving circuit 15 is a circuit that drives a plurality of scanning lines (read control scanning line GLrd, reset control scanning line GLrst (see FIG. 3)) based on various control signals. The scanning line driving circuit 15 sequentially or simultaneously selects a plurality of scanning lines, and supplies gate driving signals (e.g., reset control signal RST, read control signal RD) to the selected scanning lines. In this way, the scanning line driving circuit 15 selects a plurality of photoelectric conversion elements 30 connected to the scanning lines.

[0032] The signal line selection circuit 16 is a switch circuit that sequentially or simultaneously selects a plurality of output signal lines SL (see FIG. 3). The signal line selection circuit 16 is, for example, a multiplexer. The signal line selection circuit 16 connects the selected output signal line SL to the detection circuit 48 based on a selection signal ASW supplied from the detection control circuit 11. As a result, the signal line selection circuit 16 outputs the detection signal Vdet of the photoelectric conversion element 30 to the detection unit 40.

[0033] The detection unit 40 includes a detection circuit 48, a signal processing circuit 44, a coordinate extraction circuit 45, a memory circuit 46, and a detection timing control circuit 47. Based on a control signal supplied from the detection control circuit 11, the detection timing control circuit 47 controls the detection circuit 48, the signal processing circuit 44, and the coordinate extraction circuit 45 so that they operate in synchronization with each other.

[0034] The detection circuit 48 is, for example, an analog front-end circuit (AFE). The detection circuit 48 is a signal processing circuit having at least the functions of a detection signal amplifier circuit 42 and an A / D conversion circuit 43. The detection signal amplifier circuit 42 is a circuit that amplifies the detection signal Vdet, and is, for example, an integration circuit. The A / D conversion circuit 43 converts the analog signal output from the detection signal amplifier circuit 42 into a digital signal.

[0035] The signal processing circuit 44 is a logic circuit that detects a predetermined physical quantity input to the sensor unit 10 based on an output signal from the detection circuit 48. When the finger Fg is in contact with or close to the detection surface, the signal processing circuit 44 can detect unevenness on the surface of the finger Fg or the palm based on a signal from the detection circuit 48. The signal processing circuit 44 may also detect information about the living body based on the signal from the detection circuit 48. The information about the living body is, for example, a blood vessel image of the finger Fg or the palm, a pulse wave, a pulse rate, blood oxygen saturation, etc.

[0036] The memory circuit 46 temporarily stores the signal calculated by the signal processing circuit 44. The memory circuit 46 may be, for example, a RAM (Random Access Memory), a register circuit, or the like.

[0037] The coordinate extraction circuit 45 is a logic circuit that determines the detection coordinates of the unevenness of the surface of the finger Fg, etc., when the contact or proximity of the finger Fg is detected in the signal processing circuit 44. The coordinate extraction circuit 45 is also a logic circuit that determines the detection coordinates of the blood vessels of the finger Fg or the palm. The coordinate extraction circuit 45 combines the detection signals Vdet output from each detection element 3 of the sensor unit 10 to generate two-dimensional information indicating the shape of the unevenness of the surface of the finger Fg, etc. The coordinate extraction circuit 45 may output the detection signal Vdet as the sensor output Vo without calculating the detection coordinates.

[0038] Next, an example of the circuit configuration of the detection device 1 will be described. Fig. 5 is a circuit diagram showing a detection element. As shown in Fig. 5, the detection element 3A has a photoelectric conversion element 30A, a reset transistor Mrst, a readout transistor Mrd, and a source follower transistor Msf. The reset transistor Mrst, the readout transistor Mrd, and the source follower transistor Msf are each composed of an n-type TFT (Thin Film Transistor). However, this is not limited thereto, and each transistor may be composed of a p-type TFT.

[0039] A reference potential VCOM is applied to the anode of the photoelectric conversion element 30A. The cathode of the photoelectric conversion element 30A is connected to a node N1. The node N1 is connected to a capacitance element Cs, one of the source or drain of the reset transistor Mrst, and the gate of the source follower transistor Msf. Furthermore, a parasitic capacitance Cp exists at the node N1. When light is incident on the photoelectric conversion element 30A, a signal (charge) output from the photoelectric conversion element 30A is accumulated in the capacitance element Cs.

[0040] The gate of the reset transistor Mrst is connected to a reset control scanning line GLrst. The other of the source or drain of the reset transistor Mrst is connected to a reset signal line SLrst and is supplied with a reset potential Vrst. When the reset transistor Mrst is turned on (conductive state) in response to a reset control signal RST, the potential of the node N1 is reset to the reset potential Vrst. The reference potential VCOM has a potential lower than the reset potential Vrst, and the photoelectric conversion element 30A is reverse bias driven.

[0041] The source follower transistor Msf is connected between a terminal to which a power supply potential VDD is supplied and the readout transistor Mrd (node ​​N2). The gate of the source follower transistor Msf is connected to the node N1. A signal (charge) generated in the photoelectric conversion element 30A is supplied to the gate of the source follower transistor Msf. As a result, the source follower transistor Msf outputs a signal voltage corresponding to the signal (charge) generated in the photoelectric conversion element 30A to the readout transistor Mrd.

[0042] The read transistor Mrd is connected between the source of the source follower transistor Msf (node ​​N2) and the output signal line SL (node ​​N3). The gate of the read transistor Mrd is connected to the read control scanning line GLrd. When the read transistor Mrd is turned on in response to the read control signal RD, the signal output from the source follower transistor Msf, i.e., a signal voltage corresponding to the signal (charge) generated in the photoelectric conversion element 30A, is output to the output signal line SL as the detection signal Vdet.

[0043] FIG. 6 is a circuit diagram showing a dummy element. As shown in FIG. 6, the dummy element 3B has a photoelectric conversion element 30B and a reset transistor Mrst. A reference potential VCOM is applied to the anode of the photoelectric conversion element 30B. The cathode of the photoelectric conversion element 30 is connected to a node N1. The node N1 is connected to a capacitance element Cs and the source or drain of the reset transistor Mrst. Furthermore, a parasitic capacitance Cp exists at the node N1. When the photoelectric conversion element 30 is irradiated with light, a signal (charge) output from the photoelectric conversion element 30 is accumulated in the capacitance element Cs.

[0044] The gate of the reset transistor Mrst is connected to a reset control scanning line GLrst. The other of the source or drain of the reset transistor Mrst is connected to a reset signal line SLrst and is supplied with a reset potential Vrst. When the reset transistor Mrst is turned on (conductive state) in response to a reset control signal RST, the potential of the node N1 is reset to the reset potential Vrst. The reference potential VCOM has a potential lower than the reset potential Vrst, and the photoelectric conversion element 30 is reverse bias driven.

[0045] Moreover, the dummy element 3B does not have a read transistor Mrd and a source follower transistor Msf. Therefore, the dummy element 3B is not connected to the read control scanning line GLrd connected to the read transistor Mrd and the output signal line SL connected to the source follower transistor Msf. Therefore, the signal (charge) generated in the photoelectric conversion element 30B is not output to the output signal line SL as the detection signal Vdet.

[0046] The reset transistor Mrst and read transistor Mrd shown in Fig. 5 and the reset transistor Mrst shown in Fig. 6 each have a so-called double-gate structure configured by connecting two transistors in series. However, without being limited thereto, the reset transistor Mrst and read transistor Mrd may have a single-gate structure or three or more transistors may be connected in series.

[0047] Next, the planar configuration of the detection element 3A and the dummy element 3B will be described. Fig. 7 is a plan view showing the detection element. Fig. 8 is a plan view showing the dummy element. The detection element 3A and the dummy element 3B have photoelectric conversion elements 30A and 30B and a reset transistor Mrst as common components. Therefore, the common parts (photoelectric conversion elements 30A and 30B and the reset transistor Mrst) will be described together with reference to Figs. 7 and 8.

[0048] 7 and 8, the photoelectric conversion element 30A of the detection element 3A and the photoelectric conversion element 30B of the dummy element 3B are provided in an area surrounded by two reset control scanning lines GLrst adjacent to each other in the second direction Dy and two output signal lines SL adjacent to each other in the first direction Dx. Therefore, the multiple optical sensors (the multiple photoelectric conversion elements 30A and the multiple photoelectric conversion elements 30A) are regularly arranged in the first direction Dx and the second direction Dy.

[0049] As shown in FIG. 7 and FIG. 8, the reset transistor Mrst of the detection element 3A and the dummy element 3B has semiconductor layers 61A and 61B, source electrodes 62A and 62B, drain electrodes 63A and 63B, and gate electrodes 64A and 64B. One end of the semiconductor layers 61A and 61B is connected to the reset signal line SLrst. The other end of the semiconductor layers 61A and 61B is connected to the connection wiring SLcn. The part of the reset signal line SLrst connected to the semiconductor layers 61A and 61B functions as the source electrodes 62A and 62B, and the part of the connection wiring SLcn connected to the semiconductor layers 61A and 61B functions as the drain electrodes 63A and 63B. The reset control scanning line GLrst is provided with two branched portions branched in the second direction Dy, and the semiconductor layers 61A and 61B intersect with the two branched portions of the reset control scanning line GLrst. A channel region is formed in the semiconductor layers 61A, 61B at portions overlapping the two branched portions of the reset control scanning line GLrst, and portions of the two branched portions of the reset control scanning line GLrst at portions overlapping the semiconductor layers 61A, 61B function as gate electrodes 64A, 64B.

[0050] 7, the source follower transistor Msf of the detection element 3A has a semiconductor layer 65, a source electrode 67, and a gate electrode 68. One end of the semiconductor layer 65 is connected to a power supply signal line SLsf via a connection portion SLsfa. The other end of the semiconductor layer 65 is connected to the readout transistor Mrd. A portion of the connection portion SLsfa that is connected to the semiconductor layer 65 functions as a source electrode 67.

[0051] One end of the gate electrode 68 of the detection element 3A is connected to the connection wiring SLcn through a contact hole. The semiconductor layer 65 intersects with the gate electrode 68. That is, the reset transistor Mrst is electrically connected to the gate of the source follower transistor Msf through the connection wiring SLcn.

[0052] The cathode (n-type semiconductor layer 33A) of the photoelectric conversion element 30A of the detection element 3A is connected to the connection wiring SLcn through the contact hole H2. As a result, the cathode (n-type semiconductor layer 33) of the photoelectric conversion element 30A is electrically connected to the reset transistor Mrst and the source follower transistor Msf through the connection wiring SLcn.

[0053] The readout transistor Mrd has a semiconductor layer 71, a drain electrode 72, and a gate electrode 74. One end of the semiconductor layer 71 is connected to the semiconductor layer 65 of the source follower transistor Msf. In this embodiment, the semiconductor layer 65 and the semiconductor layer 71 are formed of a common semiconductor layer. The other end of the semiconductor layer 71 is connected to the output signal line SL via a connection portion SLa. In other words, a portion of the connection portion SLa connected to the semiconductor layer 71 functions as a drain electrode 72. A branch portion adjacent to the readout control scanning line GLrd in the second direction Dy and extending in the first direction Dx is connected to the readout control scanning line GLrd. The semiconductor layer 71 intersects with the readout control scanning line GLrd and the branch portion. A portion of the readout control scanning line GLrd and the branch portion overlapping with the semiconductor layer 71 functions as a gate electrode 74. In this configuration, the source follower transistor Msf and the readout transistor Mrd are connected to the output signal line SL.

[0054] 7 and 8 are merely examples and may be modified as appropriate. For example, the configuration is not limited to a configuration in which a plurality of transistors are arranged side by side in the second direction Dy, and some transistors may be arranged in different positions, such as adjacent to other transistors in the first direction Dx. In addition, the arrangement of each signal line and each scanning line may be appropriately modified according to the arrangement of each transistor.

[0055] Next, the cross-sectional configurations of the detection element 3A and the dummy element 3B will be described. FIG. 9 is a cross-sectional view of the detection element, specifically a cross-sectional view taken along line IX-IX' in FIG. 7. FIG. 10 is a cross-sectional view of the dummy element, specifically a cross-sectional view taken along line X-X' in FIG. 8. The detection element 3A and the dummy element 3B are formed on the same substrate 21, and have almost the same cross-sectional configuration. Therefore, they will be described together with reference to FIG. 9 and FIG. 10. Note that FIG. 9 shows the cross-sectional configuration of the reset transistor Mrst among the three transistors that the detection element 3A has, but the cross-sectional configurations of the source follower transistor Msf and the readout transistor Mrd are also similar to that of the reset transistor Mrst.

[0056] 9 and 10, the substrate 21 is an insulating substrate. For example, a glass substrate such as quartz or non-alkali glass is used for the substrate 21. The substrate 21 has a first main surface S1 and a second main surface S2 opposite to the first main surface S1. On the first main surface S1 of the substrate 21, various transistors including the reset transistor Mrst, various wirings (scanning lines and signal lines), and an insulating film are provided to form the array substrate 2. The photoelectric conversion elements 30A and 30B are arranged on the array substrate 2, i.e., on the first main surface S1 side of the substrate 21.

[0057] The undercoat film 22 is provided on the first main surface S1 of the substrate 21. The undercoat film 22, the insulating films 23, 24, 25, and the insulating films 27, 28 are inorganic insulating films, and are, for example, made of silicon oxide (SiO 2 ) and silicon nitride (SiN), etc.

[0058] The semiconductor layers 61A and 61B are provided on the undercoat film 22. The semiconductor layers 61A and 61B are made of, for example, polysilicon. However, the semiconductor layers 61A and 61B are not limited to this and may be made of a microcrystalline oxide semiconductor, an amorphous oxide semiconductor, low temperature polycrystalline silicon (LTPS), or the like.

[0059] The insulating film 23 is provided on the undercoat film 22, covering the semiconductor layers 61A and 61B. The gate electrode 64 is provided on the insulating film 23. The gate electrode 68 of the source follower transistor Msf is also provided on the insulating film 23 in the same layer as the gate electrodes 64A and 64B. The reset control scanning line GLrst and the readout control scanning line GLrd are also provided in the same layer as the gate electrodes 64A and 64B. The insulating film 24 is provided on the insulating film 23, covering the gate electrodes 64A and 64B. In the detection area AA1, the insulating film 24 covers the source follower transistor Msf, as shown in FIG. 9.

[0060] 9 and 10, the reset transistor Mrst has a top gate structure in which the gate electrodes 64A and 64B are provided on the upper sides of the semiconductor layers 61A and 61B. However, in the detection device 1 of the present disclosure, the reset transistor Mrst may have a bottom gate structure in which the gate electrodes 64A and 64B are provided on the lower sides of the semiconductor layers 61A and 61B, or may have a dual gate structure in which the gate electrodes 64A and 64B are provided on the upper and lower sides of the semiconductor layers 61A and 61B.

[0061] The insulating film 24 and the insulating film 25 are provided on the insulating film 23, covering the gate electrodes 64A and 64B. The source electrodes 62A and 62B and the drain electrodes 63A and 63B are provided on the insulating film 25. The source electrodes 62A and 62B and the drain electrodes 63A and 63B are connected to the semiconductor layer 61 via contact holes penetrating the insulating films 23, 24, and 25, respectively. The source electrodes 62A and 62B and the drain electrodes 63A and 63B are formed of, for example, a TiAlTi or TiAl laminated film having a laminated structure of titanium and aluminum.

[0062] In addition, various signal lines (output signal line SL, power supply signal line SLsf, and reset signal line SLrst) and a connection wiring SLcn are provided in the same layer as the source electrodes 62A, 62B and the drain electrodes 63A, 63B. As shown in FIG. 9, the connection wiring SLcn of the detection element 3A is connected to a gate electrode 68 of the source follower transistor Msf via a contact hole penetrating the insulating films 24, 25.

[0063] 9 and 10, the insulating film 26 is provided on the insulating film 25, covering various transistors such as the reset transistor Mrst. The insulating film 26 is made of an organic material such as photosensitive acrylic. The insulating film 26 is thicker than the insulating film 25. Compared with inorganic insulating materials, the insulating film 26 has better step coverage and can flatten steps formed by various transistors and various wirings.

[0064] Next, the cross-sectional configuration of the photoelectric conversion elements 30A, 30B will be described. The photoelectric conversion elements 30A, 30B are provided on the insulating film 26. Specifically, the lower conductive layers 35A, 35B are provided on the insulating film 26 and are electrically connected to the connection wiring SLcn through the contact hole H2. The photoelectric conversion elements 30A, 30B are connected to the lower conductive layers 35A, 35B. In a plan view, the lower conductive layers 35A, 35B have a larger area than the photoelectric conversion elements 30A, 30B. The lower conductive layers 35A, 35B can adopt, for example, a laminated structure of titanium (Ti) and titanium nitride (TiN). Since the lower conductive layers 35A, 35B are provided between the substrate 21 and the photoelectric conversion elements 30A, 30B, the lower conductive layers 35A, 35B function as light-shielding layers and can suppress the penetration of light from the second main surface S2 side of the substrate 21 into the photoelectric conversion elements 30A, 30B.

[0065] The photoelectric conversion elements 30A and 30B are configured to include a semiconductor layer having a photovoltaic effect. Specifically, the semiconductor layers of the photoelectric conversion elements 30A and 30B include i-type semiconductor layers 31A and 31B, p-type semiconductor layers 32A and 32B, and n-type semiconductor layers 33A and 33B. The i-type semiconductor layers 31A and 31B, the p-type semiconductor layers 32A and 32B, and the n-type semiconductor layers 33A and 33B are, for example, amorphous silicon (a-Si). Note that the material of the semiconductor layers is not limited to this and may be polysilicon, microcrystalline silicon, or the like.

[0066] The p-type semiconductor layers 32A and 32B are formed by doping impurities into a-Si to form p+ regions. The n-type semiconductor layers 33A and 33B are formed by doping impurities into a-Si to form n+ regions. The i-type semiconductor layers 31A and 31B are, for example, non-doped intrinsic semiconductors and have lower conductivity than the p-type semiconductor layers 32A and 32B and the n-type semiconductor layers 33A and 33B.

[0067] In a direction (third direction Dz) perpendicular to the surface of the substrate 21, the i-type semiconductor layers 31A, 31B are provided between the n-type semiconductor layers 33A, 33B and the p-type semiconductor layers 32A, 32B. In this embodiment, the n-type semiconductor layers 33A, 33B, the i-type semiconductor layers 31A, 31B, and the p-type semiconductor layers 32A, 32B are stacked in this order on the lower conductive layers 35A, 35B.

[0068] As a result, the n-type semiconductor layer 33A of the photoelectric conversion element 30A of the detection element 3A is electrically connected to the reset transistor Mrst and the source follower transistor Msf via the lower conductive layer 35A and the connection wiring SLcn. On the other hand, the n-type semiconductor layer 33B of the photoelectric conversion element 30B of the dummy element 3B is electrically connected to the reset transistor Mrst via the lower conductive layer 35B and the connection wiring SLcn.

[0069] The upper electrodes 34A, 34B are provided on the p-type semiconductor layers 32A, 32B. The upper electrodes 34A, 34B are made of a conductive material having light-transmitting properties, such as ITO (Indium Tin Oxide). The insulating film 27 is provided on the insulating film 26, covering the photoelectric conversion elements 30A, 30B and the upper electrodes 34A, 34B. A contact hole H1 is provided in the insulating film 27 in a region overlapping with the upper electrodes 34A, 34B.

[0070] The connection wirings 36A and 36B are provided on the insulating film 27 and are electrically connected to the upper electrodes 34A and 34B through contact holes H1. A reference potential VCOM (see FIGS. 5 and 6) is supplied to the p-type semiconductor layers 32A and 32B through the connection wirings 36A and 36B.

[0071] The insulating film 28 is provided on the insulating film 27, covering the upper electrodes 34A, 34B and the connection wirings 36A, 36B. The insulating film 28 is provided as a protective layer that suppresses the intrusion of moisture into the photoelectric conversion elements 30A, 30B. Furthermore, the insulating film 29 is provided on the insulating film 28. The insulating film 29 is a hard coat film made of an organic material. The insulating film 29 flattens steps on the surface of the insulating film 28 formed by the photoelectric conversion elements 30A, 30B and the connection wirings 36A, 36B.

[0072] The cover member 122 is provided to face the insulating film 29. That is, the cover member 122 is provided to cover the various transistors and the photoelectric conversion elements 30A and 30B. The adhesive layer 125 bonds the insulating film 29 and the cover member 122. The adhesive layer 125 is, for example, a light-transmitting optical clear adhesive (OCA).

[0073] Next, the operation and effect of the detection device 120 with an illumination device of the embodiment will be described. As shown in FIG. 1A, when detecting a fingerprint, light L1 irradiated from the illumination device 121 hits the finger Fg (see FIG. 1A). Light L2 reflected from the finger Fg enters the sensor area AA. The light L2 enters the photoelectric conversion element 30A of the detection element 3A provided in the detection area AA1 and the photoelectric conversion element 30B of the dummy element 3B provided in the dummy area AA2. The photoelectric conversion element 30A and the photoelectric conversion element 30B generate a signal (charge) based on the incident light. As a result, parasitic capacitance is generated in the photoelectric conversion element 30A and the photoelectric conversion element 30B.

[0074] Here, the photoelectric conversion element 30A disposed within the detection area AA1 and spaced one pitch inward from the outer frame of the detection area AA1 is adjacent to other photoelectric conversion elements 30A in the first direction Dx and the second direction Dy, and is therefore affected by the parasitic capacitances generated by the four photoelectric conversion elements 30A adjacent to it in the first direction Dx and the second direction Dy.

[0075] 3, the photoelectric conversion element 30A arranged within the detection area AA1 along the frame of the detection area AA1 is adjacent to the photoelectric conversion element 30A and the photoelectric conversion element 30B in the first direction Dx and the second direction Dy of the photoelectric conversion element 30A, so that the photoelectric conversion element 30A is affected by the parasitic capacitance generated by the photoelectric conversion element 30A and the photoelectric conversion element 30B adjacent to the photoelectric conversion element 30A in the first direction Dx and the second direction Dy.

[0076] As a result, the parasitic capacitances of the photoelectric conversion elements 30A arranged in the detection area AA1 are uniform and do not differ from each other due to the influence of the surroundings. As a result, the noise input to the signals (charges) converted by the photoelectric conversion elements 30A is also uniform.

[0077] After the fingerprint detection, the scanning line driving circuit 15 sequentially selects the read control scanning lines GLrd. Each detection element 3A connected to the selected read control scanning line GLrd sends a detection signal Vdet to the detection unit 40 via each output signal line SL. After that, a reset control signal is sent to each detection element 3A and each dummy element 3B via the reset control scanning line GLrst. As a result, the photoelectric conversion elements 30A and 30B are reverse bias driven and reset. Therefore, the parasitic capacitances of the photoelectric conversion elements 30A and 30B are also reset.

[0078] Next, the design of the detection device 1 will be described. The dummy elements 3B are intended to surround the detection elements 3A in the detection area AA1 and to prevent the effect of parasitic capacitance on the photoelectric conversion elements 30A arranged along the frame of the detection area AA1. Therefore, the dummy elements 3B do not have to be the same size as the detection elements 3A. In other words, the dummy elements 3B may be designed to be larger or smaller than the detection elements 3A. Therefore, for a determined sensor area AA, detection elements 3A of a predetermined size are arranged to determine the detection area AA1, and the remaining area can be used as the dummy area AA2. From the above, the space in the sensor area AA other than the detection area AA1 can be effectively utilized. In addition, according to this, the entire sensor area AA is not filled with the detection elements 3A, so that productivity is good.

[0079] In the dummy area AA2 of the present embodiment, the dummy elements 3B are arranged over a range of one pitch, but the detection device of the present disclosure is not limited to this and may be arranged over multiple pitches. If two dummy elements 3B are arranged in the dummy area AA2 to form a ring, the photoelectric conversion element 30A arranged within the detection area AA1 along the frame of the detection area AA1 is affected by the parasitic capacitance of the two photoelectric conversion elements 30B arranged on the outside. Therefore, the photoelectric conversion element 30A arranged in the center of the detection area AA1 can be brought closer to the parasitic capacitance that is affected.

[0080] As described above, according to the detection device 1 of the embodiment, the noise input to the signal (charge) converted by each photoelectric conversion element (photodiode) 30A can be made equal, improving the accuracy of the detected fingerprint. Also, the dummy elements 3B use the remaining space in the sensor area AA, preventing the detection device 1 from becoming larger. Furthermore, after the fingerprint is detected, the parasitic capacitances of the photoelectric conversion elements 30A and 30B are reset, reducing the impact on each component of the detection device 1.

[0081] Although the preferred embodiment of the present invention has been described above, the present invention is not limited to such an embodiment. The contents disclosed in the embodiment are merely examples, and various modifications are possible without departing from the spirit of the present invention. Appropriate modifications made within the spirit of the present invention also naturally belong to the technical scope of the present invention. [Explanation of symbols]

[0082] 1. Detection device 2 Array Board 3A Detection element (optical sensor) 3B Dummy element (light sensor) 5 sensor board, 10 Sensor section 15 Scanning line driving circuit 16 Signal line selection circuit 30 Photoelectric conversion element 30A Photoelectric conversion element (second photodiode) 30B Photoelectric conversion element (first photodiode) AA Sensor Area AA1 detection area AA2 Dummy area GA Peripheral Areas GLrst Reset control scan line GLrd Readout control scan line SL Output signal line SLsf Power signal line SLrst Reset signal line Vrst Reset potential RST Reset control signal Mrst Reset Transistor Mrd Readout transistor Msf Source Follower Transistor VDD power supply potential VCOM reference potential

Claims

[Claim 1] A first circuit constituting a dummy element; A second circuit constituting a detection element; having the first circuit includes a first photoelectric conversion element and at least one transistor; the second circuit includes a second photoelectric conversion element and a plurality of transistors; the number of the transistors included in the second circuit is different from the number of the transistors included in the first circuit; the number of the transistors included in the first circuit is one, the number of the transistors included in the second circuit is three; one of the transistors included in the first circuit is a reset transistor connected to a cathode of the first photoelectric conversion element, the three transistors included in the second circuit include a reset transistor connected to the cathode of the second photoelectric conversion element; The three transistors included in the second circuit include source follower transistors, a gate of the source follower transistor is connected to a cathode of the second photoelectric conversion element; the reset transistor is the only transistor to which the cathode of the first photoelectric conversion element is connected; a reset control scan line for transmitting a reset control signal; The reset control scanning line is connected to the gate of the reset transistor of the first circuit and the gate of the reset transistor of the second circuit. Detection device.

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