Pellicle frame, pellicle, pellicle-attached exposure master, exposure method, and semiconductor manufacturing method

Abstract

To provide a pellicle frame that reduced fall of foreign matter adhered to a surface of a pellicle frame, a pellicle, an exposure original plate with the pellicle, an exposure method and a method for producing a semiconductor.SOLUTION: The present invention provides a pellicle frame characterized in that the frame-shaped pellicle frame 1, which includes a pellicle frame main body 1a and an insulating layer 1b covering the pellicle frame main body. The insulating layer 1b is formed of inorganic materials such as a silicon-based inorganic material, ceramic, silicon dioxide, alumina, or steatite. The present invention also provides a pellicle equipped with the pellicle frame, an exposure original plate with a pellicle, an exposure method, and a semiconductor manufacturing method.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a pellicle frame that is attached to a photomask for lithography as a foreign matter protection, a pellicle, an exposure master plate with a pellicle, an exposure method, and a semiconductor manufacturing method. [Background technology]

[0002] In recent years, LSI design rules have been miniaturized to the sub-quarter micron level, and as a result, the wavelength of exposure light sources has been shortened. That is, exposure light sources have shifted from g-line (436 nm) and i-line (365 nm) from mercury lamps to KrF excimer lasers (248 nm) and ArF excimer lasers (193 nm), and furthermore, EUV exposure using EUV (Extreme Ultra Violet) light with a dominant wavelength of 13.5 nm is being considered.

[0003] In the manufacture of semiconductors such as LSIs and VLSIs, or liquid crystal display panels, patterns are created by irradiating light onto semiconductor wafers or liquid crystal originals. However, if foreign matter is attached to the lithography photomasks and reticles (collectively referred to below as "exposure originals") used in this case, the foreign matter can absorb or bend the light, causing deformation of the transferred pattern, rough edges, and black staining of the base, impairing the dimensions, quality, appearance, etc.

[0004] These operations are usually carried out in a clean room, but it is still difficult to keep the exposure master clean at all times. Therefore, a method is generally adopted in which a pellicle is attached to the surface of the exposure master to prevent foreign matter before exposure. In this case, foreign matter does not adhere directly to the surface of the exposure master, but adheres to the pellicle, so if the focus is set on the pattern of the exposure master during lithography, the foreign matter on the pellicle will not be involved in the transfer.

[0005] The basic structure of this pellicle is that a pellicle film with high transmittance to the light used for exposure is stretched on the upper end surface of a pellicle frame made of aluminum, titanium, etc., and an airtight gasket is formed on the lower end surface. The airtight gasket generally uses an adhesive layer, and a protective sheet is attached to protect this adhesive layer. The pellicle film is made of nitrocellulose, cellulose acetate, fluorine-based polymer, etc., which have high transmittance to the light used for exposure (g-line (436 nm) from a mercury lamp, i-line (365 nm), KrF excimer laser (248 nm), ArF excimer laser (193 nm), etc.), but for EUV exposure, ultrathin silicon film and carbon film are being considered as pellicle films.

[0006] In particular, because EUV exposure is performed under high vacuum, EUV pellicles are exposed to pressure changes from atmospheric pressure to vacuum and from vacuum to atmospheric pressure. During this process, air moves through the ventilation holes provided in the pellicle frame. With EUV pellicles, air moves inside the pellicle, which did not exist with ArF pellicles, so there is a high risk that foreign particles adhering to the surface of the pellicle frame will fall onto the exposure master. For this reason, EUV pellicles require stricter foreign particle inspection than ArF pellicles.

[0007] In order to prevent foreign objects from falling from the pellicle frame, Patent Document 1 proposes coating the inner surface of the pellicle frame with an adhesive layer. However, this proposal is insufficient to prevent foreign objects from falling only on the inner surface of the pellicle frame when air movement occurs inside and outside the pellicle, such as in the case of an EUV pellicle. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] Japanese Patent Application Publication No. 60-57841 Summary of the Invention [Problem to be solved by the invention]

[0009] The present invention has been made in consideration of the above circumstances, and aims to provide a pellicle frame, a pellicle, an exposure master plate with a pellicle, an exposure method, and a semiconductor manufacturing method that reduce the falling of foreign matter adhering to the surface of the pellicle frame. [Means for solving the problem]

[0010] As a result of intensive research conducted by the present inventors in order to achieve the above object, it has been found that forming an insulating layer on the surface of the pellicle frame body, preferably having a volume resistivity of 10 8 The inventors discovered that by forming an insulating layer made of a material with a resistivity of Ω·cm or higher, when a foreign matter comes into contact with the insulating layer, the charge on the insulating layer maintains the adhesion of the foreign matter, and furthermore, when air movement occurs inside the pellicle, it is possible to prevent the foreign matter adhered to the surface of the pellicle frame from falling off; this is particularly useful for pellicles used for EUV exposure, and has led to the invention.

[0011] Accordingly, the present invention provides the following pellicle frame, pellicle, exposure master plate with pellicle, exposure method, semiconductor manufacturing method, and liquid crystal display panel manufacturing method. 1. A frame-shaped pellicle frame, characterized in having a pellicle frame body and an insulating layer covering the pellicle frame body. 2. The volume resistivity of the insulating layer is 10 8 2. The pellicle frame according to claim 1, wherein the resistance is Ω·m or more. 3. A pellicle frame according to 1 or 2 above, wherein the pellicle frame body is made of titanium or a titanium alloy. 4. A pellicle frame according to claim 1 or 2, wherein the insulating layer is non-adhesive. 5. A pellicle frame according to the above item 1 or 2, wherein the insulating layer is formed from an inorganic material. 6. A pellicle frame according to 1 or 2 above, wherein the insulating layer is formed on the entire surface of the pellicle frame body. 7. The pellicle frame has a linear expansion coefficient of 10 x 10 -6 3. The pellicle frame according to 1 or 2 above, which is made of a metal having a hardness of 1 / K or less. 8. A pellicle frame according to 1 or 2 above, wherein the thickness of the pellicle frame is less than 2.5 mm. 9. A pellicle comprising the pellicle frame described in 1 above, and a pellicle membrane attached to the upper end surface of the pellicle frame via an adhesive or bonding agent. 10. The pellicle according to claim 9, which is used for exposure under vacuum or reduced pressure. 11. A pellicle according to claim 9 or 10, which is used for EUV exposure. 12. A pellicle according to claim 9 or 10, which does not have a filter. 13. The pellicle according to 9 or 10 above, which is used for exposure at a scan speed of 300 mm / sec or more. 14. A pellicle as described in 9 or 10 above, wherein the height of the pellicle is 2.5 mm or less. 15. A pellicle according to claim 9 or 10, wherein the pellicle membrane is supported by a frame. 16. An exposure master with a pellicle, comprising the pellicle according to claim 9 attached to the exposure master. 17. The exposure master with a pellicle according to claim 16, wherein the exposure master is an exposure master for EUV. 18. An exposure master with a pellicle according to claim 16, which is an exposure master with a pellicle used in EUV lithography. 19. An exposure method comprising exposing using the exposure master with a pellicle according to 16 above. 20. A method for manufacturing a semiconductor, comprising the step of exposing a substrate under vacuum or reduced pressure using the exposure master with a pellicle as described in 16 above. 21. A method for producing a liquid crystal display panel, comprising the step of exposing a substrate under vacuum or reduced pressure using the exposure master with a pellicle as described in 16 above. 22. A method for manufacturing a semiconductor, comprising the step of exposing a substrate to EUV light using the pellicle-attached exposure master described in 16 above. 23. A method for producing a liquid crystal display panel, comprising the step of exposing a substrate to EUV light using the pellicle-attached exposure master described in 16 above. 24. A method for manufacturing a semiconductor device, comprising the step of exposing a substrate to light at a scanning speed of 300 mm / sec or more using the pellicle-attached exposure master described in 16 above. 25. A method for producing a liquid crystal display panel, comprising the step of exposing a substrate at a scanning speed of 300 mm / sec or more using the exposure master with a pellicle as described in 16 above. Effect of the Invention

[0012] The pellicle frame and pellicle of the present invention can reduce the falling of foreign matter attached to the surface of the pellicle frame, and are particularly useful as pellicles for EUV exposure. Furthermore, the use of the pellicle is extremely useful in a method for manufacturing a semiconductor or liquid crystal display panel, which includes a step of exposing a substrate using an exposure master plate with a pellicle attached thereto. [Brief description of the drawings]

[0013] [Figure 1] FIG. 1(A) is a perspective view showing an example of a pellicle frame of the present invention, and FIG. 1(B) is a cross-sectional view of the frame taken along line EE'. [Diagram 2] 1 is a schematic diagram showing the appearance of the pellicle of the present invention attached to a photomask. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014] The present invention will now be described in further detail. The pellicle frame of the present invention is a frame-shaped pellicle frame having an upper end surface on which a pellicle membrane is provided and a lower end surface facing the photomask.

[0015] If the pellicle frame is frame-shaped, its shape corresponds to the shape of the photomask to which the pellicle is attached. In general, it is a quadrilateral (rectangular or square) frame. The shape of the corners (edges) of the pellicle frame may be angular (pointed) as it is, or may be chamfered with R-chamfering or C-chamfering to form a curved shape or other shape.

[0016] The pellicle frame also has a surface for providing a pellicle membrane (here, the upper end surface) and a surface that comes into contact with the photomask when the photomask is attached (here, the lower end surface).

[0017] Typically, a pellicle film is provided on the upper end surface of the pellicle frame via an adhesive or the like, and a pressure sensitive adhesive or the like is provided on the lower end surface for attaching the pellicle to a photomask, but this is not limited to the above.

[0018] The dimensions of the pellicle frame are not particularly limited, but when the height of the EUV pellicle is limited to 2.5 mm or less, the thickness of the EUV pellicle frame is smaller than that, and is preferably less than 2.5 mm. In particular, the thickness of the EUV pellicle frame is preferably 1.5 mm or less, taking into account the thickness of the pellicle film, photomask adhesive, etc. Also, the lower limit of the thickness of the pellicle frame is preferably 1.0 mm or more.

[0019] The pellicle frame of the present invention has a pellicle frame body and an insulating layer that covers the pellicle frame body.

[0020] FIG. 1(A) shows an example of a pellicle frame 1 of the present invention, with reference numeral 11 indicating the inner surface of the pellicle frame, reference numeral 12 indicating the outer surface of the pellicle frame, reference numeral 13 indicating the upper end surface of the pellicle frame, and reference numeral 14 indicating the lower end surface of the pellicle frame. As shown in FIG. 1(B), the pellicle frame 1 has a frame-shaped pellicle frame body 1a which is a base material, and an insulating layer 1b which covers the pellicle frame body. Although not shown in the figure, the pellicle frame 1 may have one or more cutouts or through holes with the upper or lower ends open. In addition, a jig hole used to peel the pellicle from the photomask may also be provided on the long side of the pellicle frame 1, but this is not shown in FIG. 1.

[0021] 2 shows a pellicle 10, in which a pellicle film 2 is attached or adhered to and stretched over the upper end surface of a pellicle frame 1 with a pressure sensitive adhesive or bonding agent 4. In addition, a photomask 3 is releasably attached or adhered to the lower end surface of the pellicle frame 1 with a pressure sensitive adhesive or bonding agent 5, thereby protecting the pattern surface on the photomask 3.

[0022] The material of the pellicle frame body is the base material of the pellicle frame. There is no particular limitation on the material of the pellicle frame body, and any known material can be used. Since a pellicle frame for EUV may be exposed to high temperatures, a material with a small thermal expansion coefficient is preferable. Examples include Si, SiO2, SiN, quartz, invar, titanium, titanium alloy, aluminum, and aluminum alloy. Among these, a metal is preferable because of its ease of processing and light weight, and it is more preferable to select from the group consisting of titanium, titanium alloy, aluminum, and aluminum alloy. In addition, from the viewpoint of a low thermal expansion coefficient, a material with a linear expansion coefficient of 10×10 -6 It is preferably a metal having a refractive index of (1 / K) or less, and more preferably selected from titanium or a titanium alloy.

[0023] The insulating layer in the present invention is formed on the surface of the pellicle frame body (i.e., any part of the upper end surface, lower end surface, inner side surface, and outer side surface of the pellicle frame body). 8 It is preferable that the resistance is Ω·m or more, and more preferably 10 9 Ω·m or more, more preferably 10 10 From the viewpoint of material availability, the upper limit of volume resistivity is 10 19 It is preferable that the volume resistivity is 10 Ω·m or less. 8As long as it is Ω·m or more, there are no restrictions on the material of the insulating layer, and any known material can be used. Examples include silicon-based inorganic coatings, elastomers, ceramics, and plastics. Among these, inorganic materials that are not easily decomposed by hydrogen radicals are preferable because hydrogen radicals are present inside the EUV exposure tool, but this is not limited to this. The volume resistivities of representative insulating materials are shown below. The numbers in parentheses indicate the volume resistivity.

[0024] The material of the insulating layer is, for example, quartz glass (>10 16 Ω·m), silicone rubber (10 12 ~10 13 Ω·m), Alumina (10 9 ~10 12 Ω·m), steatite (10 11 ~10 13 Ω·m), Paraffin (10 13 ~10 17 Ω·m), acrylic resin (>10 13 Ω·m), epoxy resin (10 12 ~10 13 Ω·m), polyvinyl chloride (5×10 12 ~10 13 Ω·m), polytetrafluoroethylene (fluororesin) (10 15 ~10 19 Ω·m), Nylon (10 8 ~10 13 Ω·m), polyethylene (>10 14 Ω·m), polystyrene (10 15 ~10 19 Ω·m), trifluoroethylene (1.2×10 13 Ω·m) and polyimide (10 12 ~10 13 Examples include organic or inorganic substances such as SiO2 (Ω·m).

[0025] From the viewpoint of workability, the insulating layer is preferably non-adhesive. In this case, non-adhesive in the present invention means that the insulating layer is substantially free of adhesiveness.

[0026] A known method can be used to provide an insulating layer on the surface of the pellicle frame body, and generally includes spray painting, electrostatic painting, electrodeposition painting, physical vapor deposition, chemical vapor deposition, and the like.

[0027] The thickness of the insulating layer formed on the surface of the pellicle frame body is appropriately selected depending on the material and method used, but from the viewpoints of productivity and workability, it is usually 0.01 to 500 μm, preferably 0.1 to 200 μm.

[0028] Before providing the insulating layer on the surface of the pellicle frame body, the pellicle frame may be subjected to a surface treatment in advance. For example, the surface of the pellicle frame may be subjected to cleaning, blasting, chemical polishing, electrolytic polishing, anodization, or the like, as necessary.

[0029] Furthermore, a jig hole is usually provided on the outer surface of the pellicle frame for use in handling or peeling the pellicle from the photomask. The size of the jig hole refers to the length in the thickness direction of the pellicle frame (diameter in the case of a circular shape), and is preferably 0.5 to 1.0 mm. There is no limitation on the shape of the jig hole, and it may be circular or rectangular. An insulating layer may be provided before or after providing the jig hole.

[0030] The pellicle frame may also be provided with a ventilation section, and a filter may be provided in the ventilation section to prevent the intrusion of foreign matter. The pellicle frame may also be provided with protrusions facing outward or inward. By using such protrusions, a filter can be formed on the protrusions. Furthermore, by providing the protrusions facing outward with a connection mechanism (screws, adhesive, etc.) with an exposure master plate, the adhesive for the photomask can also be omitted.

[0031] In the pellicle of the present invention, a pellicle membrane is provided on the upper end surface of the pellicle frame via a pressure sensitive adhesive or adhesive. There are no limitations on the material of the pressure sensitive adhesive or adhesive, and any known material can be used. In order to strongly hold the pellicle membrane, a pressure sensitive adhesive or adhesive with strong adhesive strength is preferred.

[0032] There is no particular restriction on the material of the pellicle film, but it is preferable that the material has high transmittance at the wavelength of the exposure light source and high light resistance. For example, for EUV exposure, an ultrathin silicon film, a Si film, or a carbon film (graphene, diamond-like carbon, carbon nanotube), etc., is used. If it is difficult to handle the pellicle film alone, a pellicle film supported by a frame such as silicon can be used. In that case, for example, the pellicle can be easily manufactured by bonding the frame area to the pellicle frame.

[0033] Furthermore, a photomask adhesive for attaching the photomask to the pellicle frame is formed on the lower end surface of the pellicle frame. In general, it is preferable that the photomask adhesive is provided around the entire periphery of the pellicle frame.

[0034] As the photomask adhesive, a known adhesive can be used, and preferably an acrylic adhesive, a silicone adhesive, a rubber adhesive, etc. The adhesive may be processed into any shape as necessary.

[0035] A release layer (separator) for protecting the adhesive may be attached to the lower end surface of the photomask adhesive. The material of the release layer is not particularly limited, and may be, for example, polyethylene terephthalate (PET), polytetrafluoroethylene (PTFE), tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer (PFA), polyethylene (PE), polycarbonate (PC), polyvinyl chloride (PVC), polypropylene (PP), etc. If necessary, a release agent such as a silicone-based release agent or a fluorine-based release agent may be applied to the surface of the release layer.

[0036] The pellicle of the present invention may be used not only as a protective member for preventing foreign matter from adhering to an exposed original plate in an EUV exposure device, but also as a protective member for protecting the exposed original plate during storage or transportation of the exposed original plate. Methods for attaching a pellicle to an exposed original plate such as a photomask to manufacture an exposed original plate with a pellicle include the above-mentioned method of attaching the pellicle with an adhesive for photomasks, as well as electrostatic adsorption and mechanical fixing methods.

[0037] The method for manufacturing a semiconductor or liquid crystal display panel according to the embodiment of the present invention includes a step of exposing a substrate (semiconductor wafer or liquid crystal original plate) using the above-mentioned exposure original plate with pellicle. For example, in a lithography process, which is one of the manufacturing processes for a semiconductor or liquid crystal display panel, the above-mentioned exposure original plate with pellicle is placed on a stepper and exposed to form a photoresist pattern corresponding to an integrated circuit or the like on the substrate. Generally, in EUV exposure, a projection optical system is used in which EUV light is reflected by the exposure original plate and guided to the substrate, and these are performed under reduced pressure or vacuum. As a result, even if foreign matter adheres to the pellicle in the lithography process, the foreign matter is not imaged on the wafer coated with photoresist, so that short circuits, breaks, etc. of integrated circuits due to the image of the foreign matter can be prevented. Therefore, the use of the exposure original plate with pellicle can improve the yield in the lithography process.

[0038] Exposure equipment used in the manufacture of semiconductors and the like generally includes contact exposure, proximity exposure, mirror projection exposure, step-and-repeat type projection exposure equipment, and step-and-scan type projection exposure equipment. In a step-and-scan type projection exposure equipment, for example, a circuit pattern is transferred onto a wafer while scanning the pattern of an exposure master with a thin slit, so the exposure master and the wafer move in synchronization at a scan speed according to the magnification of the projection optical system. At this time, the pellicle attached to the exposure master also moves in the same way.

[0039] In the present invention, when the scanning speed is set to 300 mm / sec or more, the outside air and the pellicle can be effectively rubbed, and the pellicle frame can be charged. If the scanning speed is slow, there is no significant effect, but if the scanning speed is fast, the effect of vibrations on the pellicle, photomask, substrate, components of the exposure device, etc. increases, and the frequency of occurrence of undesired foreign matter increases. Therefore, the pellicle of the present invention is more effective as the scanning speed is faster, and it can be used at scanning speeds of 550 mm / sec or more, and even at ultra-high scanning speeds of 700 mm / sec or more. The upper limit of the scanning speed depends on the performance of the exposure device, but is generally about 2000 mm / sec.

[0040] In addition, since the pellicle of the present invention traps foreign matter by electric charge, as a secondary effect, it is possible to configure the pellicle without installing a filter. This allows the number of components of the pellicle to be reduced, leading to cost reduction and improved productivity. This is a great advantage when used in an EUV exposure device or the like where the space for installing a pellicle is limited. EXAMPLES

[0041] The present invention will be specifically described below with reference to examples and comparative examples, but the present invention is not limited to the following examples.

[0042] [Example 1] A titanium pellicle frame body (external dimensions 150 mm × 118 mm × height 1.5 mm, frame width 4.0 mm) was fabricated. Twelve vent holes (through holes) with a diameter of 0.8 mm were provided on each side of the pellicle frame body. After washing the pellicle frame with pure water, glass beads were used to blow air into the pellicle frame at a discharge pressure of 1.5 kg / cm. 2The surface was roughened by surface treatment using a sandblasting machine for 1 minute. Next, the surface of the pellicle frame was etched by immersion in an alkaline solution and washed with water. After rinsing with pure water, an anionic electrodeposition coating was performed on the surface of the pellicle frame body using an acrylic resin product called "Elecoat Frosty W-2" (manufactured by Shimizu Corporation) to a coating thickness of 5 μm to form an insulating layer. After shower-rinsing this pellicle frame with pure water, it was heat-treated in an oven at 200°C for 30 minutes.

[0043] The pellicle frame was washed with a neutral detergent and pure water, and 100 parts by mass of silicone adhesive ("X-40-3264" manufactured by Shin-Etsu Chemical Co., Ltd.) was mixed with 1 part by mass of hardener ("PT-56" manufactured by Shin-Etsu Chemical Co., Ltd.) and applied to the upper end surface of the pellicle frame to a width of 1 mm and a thickness of 0.1 mm. In addition, 100 parts by mass of acrylic adhesive ("SK Dyne 1499M" manufactured by Soken Chemical Co., Ltd.) was mixed with 0.1 parts by mass of hardener ("L-45" manufactured by Soken Chemical Co., Ltd.) and applied to the lower end surface of the pellicle frame as a photomask adhesive to a width of 1 mm and a thickness of 0.1 mm. Thereafter, the pellicle frame was heated at 100°C for 12 hours to harden the adhesives on the upper and lower end surfaces. Next, an extremely thin silicon film was applied as a pellicle membrane to an adhesive formed on the upper surface of the frame, completing the pellicle.

[0044] [Example 2] A titanium pellicle frame body (external dimensions 150 mm x 118 mm x height 1.5 mm, frame width 4.0 mm) was produced. Twelve vent holes (through holes) with a diameter of 0.8 mm were provided on each side of this pellicle frame body. Using a vacuum deposition device, vacuum deposition was performed at a pressure of 1 Pa using monosilane and oxygen (SiH4 / O2) as gas species, and a silicon dioxide (SiO2) coating was formed as an insulating layer on the surface of the pellicle frame body to a thickness of 10 μm. Using this pellicle frame, a pellicle having a pellicle film on the upper end surface of the pellicle frame was produced in the same manner as in Example 1.

[0045] [Example 3] A titanium pellicle frame body (external dimensions 150 mm × 118 mm × height 1.5 mm, frame width 4.0 mm) was fabricated. Twelve 0.8 mm diameter air holes (through holes) were provided on each side of the frame body. Aluminum was evaporated using a vacuum deposition device, oxygen gas was supplied, and 1 × 10 -2 Vacuum deposition was performed at a pressure of 100 Pa, and an alumina coating was formed as an insulating layer on the surface of the pellicle frame body so as to have a thickness of 0.1 μm. Using this pellicle frame, a pellicle having a pellicle film on the upper end surface of the pellicle frame was produced in the same manner as in Example 1.

[0046] [Comparative Example 1] A pellicle was completed in the same manner as in Example 1, except that the acrylic resin coating was not applied to the titanium pellicle frame body.

[0047] [Foreign body test] Before assembling the pellicle frame and the pellicle film, the pellicle frames of Examples 1 and 2 and Comparative Example 1 were inspected for foreign matter by applying focused light to the inner wall surface of the frame in a dark room, and pellicle frames with 5 to 10 foreign matter particles attached to the inner wall surface of the pellicle frame were selected. In a class 1 clean room, a pellicle film without any foreign matter was assembled to the pellicle frame to complete the pellicle. The pellicle was attached to a 6-inch square quartz photomask that had been thoroughly washed with neutral detergent and pure water. Next, the pellicle with the photomask was placed in a vacuum chamber, and the pressure was reduced from atmospheric pressure to 1 Pa over 5 minutes, and then returned to atmospheric pressure over 5 minutes. After that, the presence or absence of foreign matter attached to the pellicle film was confirmed by applying focused light to the pellicle film in a dark room.

[0048] [Table 1]

[0049] From the results in Table 1 above, no foreign matter was found in Examples 1 to 3, but three foreign matter was found in Comparative Example 1. From these results, it can be seen that each of the Examples of the present invention can provide a pellicle that prevents foreign matter from falling from the inner wall of the pellicle frame. [Explanation of symbols]

[0050] 1 Pellicle frame 1a Pellicle frame body 1b Insulating layer 2. Pellicle membrane 3. Photomask 4. Pellicle membrane adhesive or glue 5. Photomask adhesives or glues 10 Pellicle 11 Inner surface of pellicle frame 12 Outer surface of pellicle frame 13 Upper end surface of pellicle frame 14 Bottom surface of pellicle frame

Claims

1. A frame-shaped pellicle frame having a pellicle frame body and an insulating layer covering the pellicle frame body, The pellicle frame is characterized in that the insulating layer is a coating or vapor deposition film made of a Si-based inorganic material or ceramics.

2. 2. The pellicle frame according to claim 1, wherein the insulating layer is made of silicon dioxide, alumina or steatite.

3. A frame-shaped pellicle frame having a pellicle frame body and an insulating layer covering the pellicle frame body, The insulating layer is made of a silicon-based inorganic material or ceramics (excluding alumina). ). A pellicle frame formed from:

4. A frame-shaped pellicle frame having a pellicle frame body and an insulating layer covering the pellicle frame body, A pellicle frame, wherein the insulating layer is made of silicon dioxide or steatite.

5. The volume resistivity of the insulating layer is 10 8 5. The pellicle frame according to claim 1, 3 or 4, having a resistance of Ω·m or more.

6. 5. The pellicle frame according to claim 1, 3 or 4, wherein said insulating layer is formed on the entire surface of the pellicle frame body.

7. 5. The pellicle frame according to claim 1, 3 or 4, wherein the thickness of the pellicle frame is less than 2.5 mm.

8. A pellicle comprising the pellicle frame according to claim 1, 3 or 4 and a pellicle membrane.

9. 9. The pellicle according to claim 8, which is used for exposure under vacuum or reduced pressure.

10. 10. The pellicle according to claim 8 or 9, which is used for EUV exposure.

11. 10. The pellicle according to claim 8 or 9, which is used for exposure at a scan speed of 300 mm / sec or more.

12. 10. The pellicle according to claim 8 or 9, wherein the height of the pellicle is 2.5 mm or less.

13. 10. The pellicle according to claim 8 or 9, wherein the pellicle membrane is supported by a frame.

14. 9. An exposure master with a pellicle, comprising the pellicle according to claim 8 attached to the exposure master.

15. An exposure method comprising exposing using the exposure master with a pellicle according to claim 14.

16. A method for manufacturing a semiconductor device, comprising the step of exposing a substrate to EUV light using the exposure master with a pellicle according to claim 14.

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