Sputtering apparatus and film formation method

Abstract

To render a distribution of film thickness more uniform along a direction orthogonal to the scanning direction of a substrate.SOLUTION: A sputtering device 100 uses plasma P to sputter a target T, depositing a film on a substrate. The sputtering device 100 includes: a vacuum vessel 2 that accommodates a substrate W; a plurality of antennas 5 that generate plasma P in the vacuum vessel 2; a reciprocating scan mechanism 14 that performs a reciprocating scan of the substrate W along the arrangement direction of the plurality of antennas 5; an adhesion shield plate 7 that is interposed between the target T and the substrate W subjected to a reciprocating scan by the reciprocating scan mechanism 14, and defines a deposition area Sf, which allows sputtering particles from the target T to pass through; and a thickness control mask 8 that is provided at one side or both sides in a scanning direction of the substrate W within the deposition area Sf and renders the thickness distribution uniform along a direction Z orthogonal to the scanning direction α.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present invention relates to a sputtering apparatus that uses plasma to sputter a target to form a film on a substrate, and a film formation method using this apparatus. [Background technology]

[0002] As shown in Patent Document 1, one type of sputtering device has multiple parallel antennas arranged in a direction perpendicular to the longitudinal direction of the antennas, and is configured to deposit a film by scanning the substrate back and forth along the arrangement direction.

[0003] According to the sputtering apparatus thus configured, the film thickness along the antenna arrangement direction, i.e., the substrate scanning direction, is averaged, and the film thickness distribution along this direction can be made uniform.

[0004] However, with such a configuration, it is difficult to improve the film thickness distribution along the direction perpendicular to the scanning direction of the substrate, and while it may be possible to achieve some uniformity by, for example, adjusting the high-frequency current applied to the antenna, it is difficult to obtain a sufficient improvement effect. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2018-154875 A Summary of the Invention [Problem to be solved by the invention]

[0006] The present invention has been made to solve the above problems, and its main object is to make it possible to make the film thickness distribution in a direction perpendicular to the substrate scanning direction more uniform than in the past. [Means for solving the problem]

[0007] That is, the sputtering apparatus of the present invention is a sputtering apparatus that sputters a target using plasma to form a film on a substrate, and is characterized in that it comprises a vacuum vessel that accommodates the substrate, a plurality of antennas that generate plasma within the vacuum vessel, a reciprocating scanning mechanism that reciprocally scans the substrate along the arrangement direction of the plurality of antennas, an adhesion prevention plate that is interposed between the target and the substrate that is reciprocally scanned by the reciprocating scanning mechanism and that defines a film formation region that is an area through which sputtered particles from the target pass, and a film thickness control mask that is provided on one or both ends of the substrate in the scanning direction in the film formation region and that uniformizes the film thickness distribution along a direction perpendicular to the scanning direction.

[0008] According to the sputtering apparatus configured in this manner, a film thickness control mask for uniformizing the film thickness distribution along a direction perpendicular to the scanning direction is provided on one or both ends of the substrate in the film formation region in the scanning direction, and therefore the film thickness distribution along the direction perpendicular to the scanning direction can be significantly improved compared to the conventional method.

[0009] It is preferable that the contour of the film thickness control mask is composed of straight line portions and curved line portions. With this configuration, the thickness control mask can have a relatively simple shape, but there is a degree of freedom in its shape, and the thickness control mask can be formed into an appropriate shape to suit various usage conditions, such as for each device or each film formation recipe.

[0010] It is preferable that the contour of the film thickness control mask has a chamfered junction between two of the straight line portions. In this way, the joint between the two straight portions does not form a protrusion, making it possible to suppress arcing that may occur at this joint.

[0011] In order to more reliably make the film thickness distribution uniform in a direction perpendicular to the scanning direction, it is preferable that the film thickness control mask has a shape corresponding to an uneven region of the film thickness distribution of the film formed on the substrate in the direction perpendicular to the scanning direction.

[0012] It is preferable that the film thickness control mask is provided at a position outside the area directly below the target within the film formation region. This can reduce the effect of radiant heat from the target to the film thickness control mask during sputtering, and can prevent, for example, thermal deformation of the film thickness control mask.

[0013] In a configuration in which the adhesion prevention plate and the film thickness control mask are fastened by fasteners inserted into insertion holes formed in each of the adhesion prevention plate and the film thickness control mask, it is preferable that the insertion holes formed in at least one of the adhesion prevention plate or the film thickness control mask be elongated holes. This allows fine adjustment of the relative positions of the adhesion prevention plate and the film thickness control mask, improving the ease of use of the film thickness control mask.

[0014] It is preferable that a load lock chamber is provided adjacent to the film formation chamber equipped with the vacuum vessel, and the film formation apparatus further comprises a mask transfer mechanism for transferring the film thickness control mask between the film formation chamber and the load lock chamber. In this case, the film thickness control mask can be transferred between the film formation chamber and the load lock chamber without breaking the vacuum, which improves the ease of maintenance such as replacement and cleaning of the control mask.

[0015] In addition, the film formation method of the present invention is a film formation method using the above-mentioned sputtering apparatus, characterized in that a high-frequency current is passed through the antenna to generate plasma in the vacuum chamber, a negative voltage is applied to the target to sputter the target with the plasma, and the film is formed by scanning the substrate back and forth between the outside and inside of a film formation region in a scanning direction parallel to the target. Effect of the Invention

[0016] According to the present invention thus configured, the film thickness distribution in the direction perpendicular to the substrate scanning direction can be made more uniform than ever before. [Brief description of the drawings]

[0017] [Figure 1] 1 is a schematic diagram showing an overall configuration of a sputtering apparatus according to an embodiment; [Diagram 2] FIG. 2 is a cross-sectional view perpendicular to the longitudinal direction of the antenna, showing the configuration of the sputtering apparatus of the embodiment. [Diagram 3] FIG. 2 is a vertical cross-sectional view taken along the longitudinal direction of the antenna, showing the configuration of the sputtering apparatus of the embodiment; [Figure 4] 3A and 3B are schematic diagrams showing an adhesion prevention plate and a film thickness control mask according to the embodiment; [Diagram 5] 11 is a graph illustrating a film thickness distribution along a direction perpendicular to the scanning direction. [Figure 6] FIG. 2 is a schematic diagram showing the configuration of a film thickness control mask according to the embodiment; [Figure 7] FIG. 13 is a schematic diagram showing the arrangement of a film thickness control mask in a modified embodiment. [Figure 8] FIG. 13 is a schematic diagram showing the arrangement of a film thickness control mask in a modified embodiment. [Figure 9] FIG. 13 is a schematic diagram showing the overall configuration of a sputtering apparatus according to a modified embodiment. [Figure 10] FIG. 13 is a schematic diagram showing the configuration of a film thickness control mask according to a modified embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0018] Hereinafter, an embodiment of a sputtering apparatus according to the present invention will be described with reference to the drawings.

[0019] <Device configuration> 1, a sputtering apparatus 100 of this embodiment sputters a target T using an inductively coupled plasma P to form a film on a substrate W. Here, the substrate W is, for example, a substrate for a flat panel display (FPD) such as a liquid crystal display or an organic EL display, a flexible substrate for a flexible display, or the like.

[0020] 1 to 3, the sputtering apparatus 100 includes a vacuum vessel 2 that is evacuated and into which a gas G is introduced, a substrate holder 3 that holds a substrate W in the vacuum vessel 2, a target holder 4 that holds a target T in the vacuum vessel 2, a plurality of linear antennas 5 arranged in the vacuum vessel 2, and a high-frequency power supply 6 that applies high-frequency waves to the plurality of antennas 5 to generate an inductively coupled plasma P in the vacuum vessel 2. By applying high-frequency waves from the high-frequency power supply 6 to the plurality of antennas 5, a high-frequency current IR flows through the plurality of antennas 5, an inductive electric field is generated in the vacuum vessel 2, and the inductively coupled plasma P is generated.

[0021] The vacuum vessel 2 is, for example, a metallic vessel, and its interior is evacuated to a vacuum by a vacuum exhaust device 16. In this example, the vacuum vessel 2 is electrically grounded.

[0022] A sputtering gas G is introduced into the vacuum chamber 2 via, for example, a flow rate regulator (not shown). The sputtering gas G may be selected according to the processing to be performed on the substrate W, and is, for example, an inert gas such as argon (Ar).

[0023] The substrate holding unit 3 is a holder that holds the flat substrate W in a horizontal state, for example, within the vacuum chamber 2. The substrate holding unit 3 is configured to be scanned reciprocally in a linear manner within the vacuum chamber 2, as will be described later.

[0024] The target holder 4 holds the target T facing the substrate W held by the substrate holder 3. The target T in this embodiment is a flat plate having a rectangular shape in a plan view. The target holder 4 is provided on a side wall 2a (e.g., an upper wall) that forms the vacuum vessel 2. An insulating section 9 having a vacuum seal function is provided between the target holder 4 and the upper wall 2a of the vacuum vessel 2. A target bias power supply 10 that applies a target bias voltage to the target T is connected to the target T via the target holder 4 in this example. The target bias voltage is a voltage that attracts ions in the plasma P to the target T and causes sputtering.

[0025] In this embodiment, a plurality of target holders 4 are provided. The plurality of target holders 4 are arranged in parallel on the same plane on the front surface side of the substrate W in the vacuum chamber 2 along the front surface of the substrate W (e.g., substantially parallel to the rear surface of the substrate W). The plurality of target holders 4 are arranged at equal intervals so that their longitudinal directions are parallel to one another. As a result, the plurality of targets T arranged in the vacuum chamber 2 are substantially parallel to the front surface of the substrate W and are arranged at equal intervals so that their longitudinal directions are parallel to one another, as shown in Figs. 2 and 3. Each target holder 4 has the same configuration.

[0026] The multiple antennas 5 are arranged in parallel on the same plane on the front surface side of the substrate W in the vacuum vessel 2 along the surface of the substrate W (e.g., substantially parallel to the surface of the substrate W). The multiple antennas 5 are arranged at equal intervals along a direction perpendicular to the longitudinal direction so that their longitudinal directions are parallel to each other. Each antenna 5 has a linear shape and the same configuration in a plan view, and its length is, for example, several tens of centimeters or more.

[0027] 1 and 2, the antennas 5 in this embodiment are disposed on both sides of the target T held by each target holder 4. That is, the antennas 5 and the targets T are disposed alternately, and one target T is sandwiched between two antennas 5. Here, the longitudinal direction of each antenna 5 and the longitudinal direction of the target T held by each target holder 4 are the same direction.

[0028] The material of each antenna 5 is, for example, but not limited to, copper, aluminum, an alloy thereof, stainless steel, etc. The antenna 5 may be hollow and a coolant such as cooling water may be flowed therein to cool the antenna 5.

[0029] As shown in Fig. 3, the vicinity of both ends of the antenna 5 penetrates the opposing side walls 2b, 2c of the vacuum vessel 2. An insulating member 11 is provided at each of the portions where both ends of the antenna 5 penetrate to the outside of the vacuum vessel 2. Both ends of the antenna 5 penetrate each insulating member 11, and the penetration portions are vacuum-sealed by, for example, packing. The space between each insulating member 11 and the vacuum vessel 2 is also vacuum-sealed by, for example, packing. The material of the insulating member 11 is, for example, ceramics such as alumina, quartz, or engineering plastics such as polyphenylene sulfide (PPS) and polyether ether ketone (PEEK).

[0030] Furthermore, the portion of each antenna 5 located inside the vacuum vessel 2 is covered with a straight tubular insulating cover 12 made of an insulating material. There is no need to seal between both ends of the insulating cover 12 and the vacuum vessel 2. This is because even if gas enters the space inside the insulating cover 12, the space is small and the travel distance of electrons is short, so that plasma P is not usually generated in the space. The material of the insulating cover 12 is, for example, quartz, alumina, fluororesin, silicon nitride, silicon carbide, silicon, etc., but is not limited to these.

[0031] A high frequency power supply 6 is connected to the power feed end 5a, which is one end of the antenna 5, via a matching circuit 61, and the other end, which is the termination end 5b, is directly grounded. An impedance adjustment circuit such as a variable capacitor or a variable reactor may be provided at the power feed end 5a or the termination end 5b to adjust the impedance of each antenna 5. By adjusting the impedance of each antenna 5 in this manner, the density distribution of the plasma P in the longitudinal direction of the antenna 5 can be adjusted, and the film thickness in the longitudinal direction of the antenna 5 can be made somewhat uniform.

[0032] With the above configuration, a high-frequency current IR can be applied to the antenna 5 from the high-frequency power supply 6 via the matching circuit 61. The frequency of the high-frequency current is, for example, a general 13.56 MHz, but is not limited to this.

[0033] 2, the sputtering apparatus 100 of this embodiment has a reciprocating scanning mechanism 14 that reciprocally scans the substrate W held by the substrate holding part 3 along the arrangement direction X of the antenna 5. Note that the arrangement direction X here is a direction perpendicular to the longitudinal direction of the antenna 5.

[0034] The reciprocating scanning mechanism 14 mechanically scans the substrate holding unit 3 reciprocally along the arrangement direction X of the antennas 5, thereby scanning the substrate W held by the substrate holding unit 3 reciprocally on the same plane along the arrangement direction X. That is, the scanning direction α of the substrate W by the reciprocating scanning mechanism 14 is parallel to the arrangement direction X of the antennas 5 here. However, the scanning direction α does not necessarily need to be completely parallel to the arrangement direction X, and may be slightly inclined with respect to the arrangement direction X.

[0035] The forward and backward movements of the substrate W by the reciprocating scanning mechanism 14 are linear, and the forward and backward movements are configured to overlap each other. The reciprocating scanning mechanism 14 may include, for example, an actuator 15 provided outside the vacuum vessel 2, and a linear guide (not shown) connected to the substrate holder 3 and driven by the actuator 15.

[0036] 1, the film formation chamber R1 of this embodiment includes the above-mentioned vacuum vessel 2, and is provided with an evacuation space R1a adjacent to the vacuum vessel 2 for evacuating the substrate W during film formation from the vacuum vessel 2. The above-mentioned reciprocating scanning mechanism 14 reciprocally scans the substrate W at least between the inside of the vacuum vessel 2 and the evacuation space R1a.

[0037] In this embodiment, a load lock chamber R2 that can be switched between an atmospheric state and a vacuum state is provided next to the film formation chamber R1. The load lock chamber R2 is provided so as to be able to communicate with the above-mentioned evacuation space R1a via, for example, a gate valve GV, and a reciprocating scanning mechanism 14 scans the substrate W between the film formation chamber R1 and the load lock chamber R2 before and after film formation.

[0038] In such a configuration, the sputtering apparatus 100 of this embodiment, as shown in Figures 1, 2, and 4, is provided with an adhesion prevention plate 7 that is interposed between the target T and the substrate W that is reciprocally scanned by the reciprocating scanning mechanism 14 and defines a film formation region Sf, which is an area that allows sputtered particles from the target T to pass through.

[0039] More specifically, as shown in FIG. 4, in this embodiment, a target area St is set corresponding to the arrangement of multiple targets T, and the adhesion prevention plate 7 defines a film formation area Sf by narrowing this target area St.

[0040] 4, the target region St here is set as a region between, for example, one end side portion Ta of the target T located at one end side of the scanning direction α of the substrate W, and the other end side portion Tb of the target T located at the other end side of the scanning direction α, among the multiple targets T. In other words, each of the multiple targets T is located inside the target region St without protruding from the target region St when viewed from the top-bottom direction.

[0041] In the above-described configuration, the adhesion prevention plate 7 is composed of, for example, a plurality of plate-shaped elements 71 arranged so as to overlap the outer periphery of the target area St, and these plurality of plate-shaped elements 71 form a film formation area Sf by narrowing the target area St at least in the scanning direction α of the substrate W.

[0042] The adhesion-prevention plate 7 of this embodiment is composed of a plurality of plate-like elements 71 arranged in a rectangular shape, and the insides of these plate-like elements 71 are formed as rectangular deposition regions Sf. The plurality of plate-like elements 71 may be separate bodies, or some or all of them may be integrally formed.

[0043] In this way, by providing the adhesion-preventing plate 7 and reciprocating the substrate W by the reciprocating scanning mechanism 14, the thickness of the film formed on the substrate W can be made uniform in the scanning direction α.

[0044] On the other hand, the film thickness distribution along a direction perpendicular to the scanning direction α of the substrate W (hereinafter also referred to as the perpendicular direction Z) may not be uniform, as shown in Fig. 5. This may be due to, for example, the difficulty in uniforming the distribution of the current density and plasma density along the direction Z perpendicular to the scanning direction α, i.e., the longitudinal direction of the antenna 5.

[0045] Therefore, the sputtering apparatus 100 of this embodiment further includes a film thickness control mask 8 for making the film thickness distribution along the orthogonal direction Z uniform, as shown in FIG.

[0046] The film thickness control mask 8 covers a part of the film formation region Sf to block some of the sputtered particles traveling from the target T to the substrate W, and is provided in the film formation region Sf on at least one side of the scanning direction α of the substrate W. Here, the film thickness control mask 8 is provided only on one end side of the scanning direction α, and is disposed directly below the target T located on one end side of the scanning direction α within the film formation region Sf.

[0047] This film thickness control mask 8 is fixed to the above-mentioned adhesion prevention plate 7 by, for example, screwing, and is a separate body from the adhesion prevention plate 7. However, the film thickness control mask 8 may be formed integrally with the adhesion prevention plate 7.

[0048] The film thickness control mask 8 of this embodiment has an elongated shape extending in the perpendicular direction Z, and its shape changes irregularly along the perpendicular direction Z.

[0049] For a more specific explanation, an embodiment in which a film is formed on the substrate T without using the film thickness control mask 8, and the film thickness distribution along the orthogonal direction Z is the distribution shown in FIG. 5, will be taken up and explained.

[0050] As shown in Figure 5, when the film thickness distribution in the orthogonal direction Z is non-uniform, the region of this film thickness distribution where the film is formed to a thickness exceeding the thinnest film thickness (the shaded area in Figure 5) becomes a non-uniform region that causes the film thickness distribution to become non-uniform.

[0051] Therefore, the film thickness control mask 8 of this embodiment is shaped in consideration of the shape of the film thickness distribution along the orthogonal direction Z when the film thickness control mask 8 is not used, as shown in Figure 6, and specifically, has a shape corresponding to the non-uniform region in this film thickness distribution.

[0052] In order to achieve such a shape, the thickness control mask 8 of this embodiment has a contour that is made up of a straight line portion 8L and a curved line portion 8C. More specifically, the portion of the contour of the thickness control mask 8 that is located within the film formation region Sf is made up of the straight line portion 8L and the curved line portion 8C.

[0053] Here, as shown in Fig. 6, a shape corresponding to the non-uniform region of the film thickness distribution along the orthogonal direction Z is formed by joining a number of straight line portions 8L (Fig. 6a), and the film thickness control mask 8 is formed by chamfering the joints 8X of these straight line portions 8L with C-chamfering, R-chamfering, or the like (Fig. 6b). As a result, the portion including the joints 8X becomes the curved portion 8C.

[0054] Using the sputtering apparatus 100 configured in this manner, a high-frequency current IR is passed through the antenna 5 to generate a plasma P within the vacuum chamber 2, a negative voltage is applied to the target T to sputter the target T with the plasma P, and the substrate W is scanned back and forth between the outside and inside of the film formation region Sf in a scanning direction α parallel to the target T, thereby forming a uniform film along the orthogonal direction.

[0055] <Effects of this embodiment> According to the sputtering apparatus 100 of this embodiment configured as described above, a film thickness control mask 8 for uniformizing the film thickness distribution along the orthogonal direction Z is provided at one end side of the scanning direction α of the substrate W in the film formation region Sf, so that the film thickness distribution along this orthogonal direction Z can be significantly improved compared to the conventional method.

[0056] Furthermore, since the film thickness control mask 8 has a shape corresponding to the uneven area of ​​the film thickness distribution along the orthogonal direction Z of the film formed on the substrate W, the film thickness distribution along the orthogonal direction Z can be more reliably made uniform.

[0057] Furthermore, since the contour of the film thickness control mask 8 is composed of straight line portions 8L and curved line portions 8C, the film thickness control mask 8 has a relatively simple shape, but there is a degree of freedom in its shape, and the film thickness control mask 8 can be made in an appropriate shape to suit various usage modes, such as for each device or each film formation recipe.

[0058] Moreover, since the junction 8X of the two straight line portions 8L in the contour of the film thickness control mask 8 is chamfered, the junction 8X does not form a protrusion, and arcing that may occur at the junction 8X can be suppressed.

[0059] <Other Modified Embodiments> The present invention is not limited to the above-described embodiment.

[0060] For example, in the above embodiment, the film thickness control mask 8 was placed directly below the target T in the film formation region Sf, but as shown in FIG. 7, it may be provided at a position that is not directly below the target T as long as it is placed within the film formation region Sf. With this configuration, the influence of radiant heat from the target T to the film thickness control mask 8 during sputtering can be reduced, and for example, thermal deformation of the film thickness control mask 8 can be prevented.

[0061] In addition, in the above embodiment, the film thickness control mask 8 was provided only on one side of the scanning direction α within the film formation region Sf, but as shown in Figure 8, the film thickness control mask 8 may be provided on both sides of the scanning direction α within the film formation region Sf. With this configuration, the effect of suppressing non-uniform regions in the film thickness distribution along the orthogonal direction Z can be shared by each of the pair of film thickness control masks 8, which is useful, for example, when the maximum film thickness of the non-uniform regions is large.

[0062] In the above embodiment, the film thickness control mask 8 is fixed to the adhesion prevention plate 7 by screws or the like, but the film thickness control mask 8 may be configured to be movable relative to the adhesion prevention plate 7. Specifically, in a configuration in which the adhesion prevention plate 7 and the film thickness control mask 8 are fastened by fasteners inserted into insertion holes formed in each of them, an embodiment can be mentioned in which the insertion hole formed in at least one of the adhesion prevention plate 7 or the film thickness control mask 8 is an elongated hole. With this configuration, the relative positions of the adhesion prevention plate 7 and the film thickness control mask 8 can be finely adjusted, and the film thickness control mask 8 can be made easier to use.

[0063] Furthermore, as shown in FIG. 9, the sputtering apparatus 100 according to the present invention may be configured so that a film thickness control mask 8 can be transferred between the film formation chamber R1 and the load lock chamber R2. An example of such a sputtering apparatus 100 is a configuration including a film thickness control mask 8 arranged offset in the height direction from the adhesion prevention plate 7, and a mask transfer mechanism that transfers the film thickness control mask 8 between the film formation chamber R1 and the load lock chamber R2. Note that an example of the mask transfer mechanism may be one that is configured using an actuator, a linear guide, or the like, similar to the reciprocating scanning mechanism. With this configuration, the film thickness control mask 8 can be transferred between the film formation chamber R1 and the load lock chamber R2 without breaking the vacuum, thereby improving the ease of maintenance, such as replacement and cleaning of the control mask 8.

[0064] In addition, in the embodiment described above, the portion of the contour of the film thickness control mask 8 located within the deposition region Sf was a shape consisting of straight line portions 8L and curved portions 8C, but as shown in FIG. 10, the portion of the contour located within the deposition region Sf may be wavy or the like consisting of only curved portions 8C.

[0065] Furthermore, the present invention is not limited to the above-described embodiment, and it goes without saying that various modifications are possible without departing from the spirit and scope of the present invention. [Explanation of symbols]

[0066] 100 Sputtering equipment W ···Substrate P...Plasma T ···Target 2...Vacuum container 3...Board holding part 4 Target holder 5 Antenna 14 Reciprocating scanning mechanism α: Scanning direction Z: Direction perpendicular to the scanning direction 7...Adhesion prevention plate 8. Film thickness control mask

Claims

1. A sputtering apparatus that uses plasma to sputter a target to form a film on a substrate, comprising: a vacuum vessel for housing the substrate; a plurality of antennas for generating plasma within the vacuum vessel; a reciprocating scanning mechanism that reciprocally scans the substrate along an arrangement direction of the plurality of antennas; a deposition prevention plate interposed between the target and the substrate reciprocally scanned by the reciprocating scanning mechanism, the deposition prevention plate defining a film formation region that is a region through which sputtered particles from the target pass; a film thickness control mask provided on one or both ends of the substrate in the film formation region in a scanning direction thereof to uniformize a film thickness distribution along a direction perpendicular to the scanning direction; A sputtering apparatus, wherein the film thickness control mask is provided at a position outside directly below the target within the film formation region.

2. 2. The sputtering apparatus according to claim 1, wherein the contour of said film thickness control mask is made up of straight line portions and curved line portions.

3. 3. The sputtering apparatus according to claim 2, wherein a junction between two of said straight line portions in the contour of said film thickness control mask is chamfered.

4. 4. The sputtering apparatus according to claim 1, wherein the film thickness control mask has a shape corresponding to an area of ​​non-uniformity in the film thickness distribution of the film formed on the substrate along a direction perpendicular to the scanning direction.

5. In a configuration in which the adhesion prevention plate and the film thickness control mask are fastened by fasteners inserted into insertion holes formed in the respective plates, 5. The sputtering apparatus according to claim 1, wherein the insertion hole formed in at least one of the adhesion prevention plate and the film thickness control mask is an elongated hole.

6. a load lock chamber is provided in the deposition chamber equipped with the vacuum vessel; 6. The sputtering apparatus according to claim 1, further comprising a mask transfer mechanism for transferring the film thickness control mask between the film formation chamber and the load lock chamber.

7. A film formation method using the sputtering apparatus according to any one of claims 1 to 6, A high frequency current is applied to the antenna to generate plasma in the vacuum chamber; applying a negative voltage to the target to sputter the target with plasma; A film formation method, comprising: scanning the substrate back and forth between the outside and inside of a film formation region in a scanning direction parallel to the target to form a film.

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