Method for manufacturing a light-emitting device and a light-emitting module

Abstract

To provide a manufacturing method of a light emitting device and a manufacturing method of a light emitting module which can manufacture a light emitting device and a light emitting module at low cost.SOLUTION: A manufacturing method of a light emitting device that includes a light emitting element including a semiconductor laminate having a first surface, a second surface on the opposite side of the first surface, and a side surface between the first and second surfaces, and an electrode arranged on the second surface of the semiconductor laminate, and in which the side surface of the semiconductor laminate is covered with a resin member includes the steps of forming a resin layer in the A stage state on a support, placing the light emitting element on the surface of the resin layer with the surface of the resin layer facing the first surface, heating the resin layer at first temperature to reduce the viscosity of the resin layer and submerging the light emitting element such that the second surface of the semiconductor laminate is exposed by the weight of the light emitting element, and forming the resin member by heating the resin layer at second temperature higher than the first temperature and curing the resin layer with the second surface exposed.SELECTED DRAWING: Figure 1C

Description

[Technical field]

[0001] The present disclosure relates to a method for manufacturing a light emitting device and a method for manufacturing a light emitting module. [Background technology]

[0002] Light emitting devices and light emitting modules including a light emitting element are known (see, for example, Patent Documents 1 and 2). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2017-228657 A [Patent Document 2] JP 2018-133304 A Summary of the Invention [Problem to be solved by the invention]

[0004] 2. Description of the Related Art As the applications of light emitting devices and light emitting modules including light emitting elements expand, there is a demand for inexpensive light emitting devices and light emitting modules.

[0005] Therefore, an object of the present disclosure is to provide a method for manufacturing a light emitting device and a method for manufacturing a light emitting module that can manufacture a light emitting device and a light emitting module at low cost. [Means for solving the problem]

[0006] In order to achieve the above object, a manufacturing method for a light emitting device according to the present disclosure is a manufacturing method for a light emitting device having a light emitting element including a semiconductor stack including a first surface, a second surface opposite to the first surface, and a side surface between the first surface and the second surface, and an electrode arranged on the second surface of the semiconductor stack, the side surface of the semiconductor stack being covered with a resin member, the manufacturing method including the steps of: arranging a resin layer in an A-stage state on a support; placing the light emitting element on the upper surface of the resin layer with the upper surface of the resin layer facing the first surface; heating the resin layer at a first temperature to reduce the viscosity of the resin layer and sinking the light emitting element under its own weight so that the second surface of the semiconductor stack is exposed; and heating the resin layer at a second temperature higher than the first temperature to harden the resin layer with the second surface exposed, thereby forming the resin member. Furthermore, a manufacturing method for a light emitting module according to the present disclosure includes the steps of: preparing a light source including a light emitting element including a semiconductor laminate including a first surface, a second surface opposite to the first surface, and a side surface between the first surface and the second surface, and an electrode disposed on the second surface of the semiconductor laminate, with at least the second surface exposed to the outside; preparing a light guide plate including a first main surface and a second main surface opposite to the first main surface, with a recess in the first main surface; arranging a resin layer in an A-stage state within the recess; placing the light source on the upper surface of the resin layer with an upper surface of the resin layer facing the first surface of the light emitting element; heating the resin layer at a first temperature to reduce the viscosity of the resin layer and sinking the light source by its own weight so that the second surface of the semiconductor laminate is exposed; and forming the resin member by heating the resin layer at a second temperature higher than the first temperature to harden the resin layer with the second surface exposed. Effect of the Invention

[0007] As a result, the light emitting device and the light emitting module can be manufactured at low cost. [Brief description of the drawings]

[0008] [Figure 1A]3A to 3C are schematic cross-sectional views showing an example of a manufacturing process for the light emitting device according to the first embodiment. [Figure 1B] 3A to 3C are schematic cross-sectional views showing an example of a manufacturing process for the light emitting device according to the first embodiment. [Figure 1C] 3A to 3C are schematic cross-sectional views showing an example of a manufacturing process for the light emitting device according to the first embodiment. [Figure 1D] 3A to 3C are schematic cross-sectional views showing an example of a manufacturing process for the light emitting device according to the first embodiment. [Figure 1E] 1 is a schematic cross-sectional view showing an example of a light emitting device 100 obtained by a method for producing a light emitting device according to Embodiment 1. FIG. [Figure 1F] 10A to 10C are schematic cross-sectional views showing an example of a manufacturing process for a light emitting device according to Modification 3 of Embodiment 1. [Figure 1G] 11A to 11C are schematic cross-sectional views showing an example of a method for manufacturing a light emitting device according to Modification 3 of Embodiment 1. [Figure 1H] 10A to 10C are schematic cross-sectional views showing an example of a manufacturing process for a light emitting device according to Modification 4 of Embodiment 1. [Figure 1I] 11 is a schematic cross-sectional view showing an example of a light emitting device obtained by a method for producing a light emitting device according to Modification 5 of Embodiment 1. FIG. [Figure 2A] 5A to 5C are schematic cross-sectional views showing an example of a manufacturing process for the light emitting device according to the second embodiment. [Figure 2B] 5A to 5C are schematic cross-sectional views showing an example of a manufacturing process for the light emitting device according to the second embodiment. [Figure 2C] 5A to 5C are schematic cross-sectional views showing an example of a manufacturing process for the light emitting device according to the second embodiment. [Figure 2D] 5A to 5C are schematic cross-sectional views showing an example of a manufacturing process for the light emitting device according to the second embodiment. [Figure 2E] 1 is a schematic cross-sectional view showing an example of a light emitting device 200 obtained by the method for producing a light emitting device according to Embodiment 2. FIG. [Figure 3A] 5A to 5C are schematic cross-sectional views showing an example of a manufacturing process for a light emitting device according to a modified example of the first embodiment. [Figure 3B] 4 is a schematic cross-sectional view showing an example of a light emitting device obtained by a method for producing a light emitting device according to a modified example of the first embodiment. FIG. [Figure 4A] 10A to 10C are schematic cross-sectional views showing an example of a manufacturing process for a light emitting device according to another modified example of the first embodiment. [Figure 4B] 10 is a schematic cross-sectional view showing an example of a light emitting device obtained by a method for producing a light emitting device according to another modified example of the first embodiment. FIG. [Figure 5A] 10A to 10C are schematic cross-sectional views showing an example of a manufacturing process for the light-emitting module according to embodiment 3. [Figure 5B] 10A to 10C are schematic cross-sectional views showing an example of a manufacturing process for the light-emitting module according to embodiment 3. [Figure 5C] 10A to 10C are schematic cross-sectional views showing an example of a manufacturing process for the light-emitting module according to embodiment 3. [Figure 5D] 10A to 10C are schematic cross-sectional views showing an example of a manufacturing process for the light-emitting module according to embodiment 3. [Figure 5E] 10A to 10C are schematic cross-sectional views showing an example of a manufacturing process for the light-emitting module according to embodiment 3. [Figure 5F] 10A to 10C are schematic cross-sectional views showing an example of a manufacturing process for the light-emitting module according to embodiment 3. [Figure 6] FIG. 5E is a schematic cross-sectional view showing the width W1 and height H1 of the light-emitting element, the depth D33 and width W33 of the recess 33, and the width W50 of the wall between adjacent recesses 33. [Figure 7A] 10A to 10C are schematic cross-sectional views showing an example of a manufacturing process for the light-emitting module according to embodiment 4. [Figure 7B] 10A to 10C are schematic cross-sectional views showing an example of a manufacturing process for the light-emitting module according to embodiment 4. [Figure 7C] 10A to 10C are schematic cross-sectional views showing an example of a manufacturing process for the light-emitting module according to embodiment 4. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, embodiments for carrying out the present disclosure will be described with reference to the drawings. Note that the manufacturing method of the light emitting device and the manufacturing method of the light emitting module described below are intended to embody the technical ideas of the present disclosure, and unless otherwise specified, the present disclosure is not limited to the following. In each drawing, the same reference numerals may be used for components having the same function. In consideration of the explanation or ease of understanding of the main points, the embodiments may be shown separately for convenience, but partial replacement or combination of the configurations shown in different embodiments is possible. In the embodiments described below, the description of matters common to the above will be omitted, and only the differences will be described. In particular, similar effects due to similar configurations will not be mentioned one after another in each embodiment. The size and positional relationship of the components shown in each drawing may be exaggerated to clarify the explanation. In addition, an end view showing only the cut surface may be used as a cross-sectional view.

[0010] <Embodiment 1> The manufacturing method of the light-emitting device of embodiment 1 of the present disclosure is a manufacturing method of a light-emitting device 100 including: (i) a light-emitting element 1 having a semiconductor laminate 10 including a first surface 11, for example, a light-emitting surface, a second surface 12 opposite the first surface 11, and a side surface 13 between the first surface 11 and the second surface 12, and an electrode 20 including a first electrode 21 and a second electrode 22 arranged on the second surface 12 of the semiconductor laminate 10; and (ii) a resin member 30 covering at least the side surface 13 of the semiconductor laminate 10. The method for manufacturing a light emitting device according to an embodiment of the present disclosure includes the steps of: (a) placing a resin layer 31 in an A-stage state on a support 35; (b) placing the light-emitting element 1 on the upper surface of the resin layer 31 in an A-stage state arranged on the support 35, with the upper surface of the resin layer 31 facing the first surface 11 of the light-emitting element 1; (c) heating the resin layer 31 at a first temperature to reduce the viscosity of the resin layer 31 and sinking the light emitting element 1 by its own weight so that the second surface 12 of the semiconductor laminate 10 is exposed from the resin layer 31; (d) heating the resin layer 31 at a second temperature higher than the first temperature to harden the resin layer in a state in which the second surface 12 is exposed from the resin layer, thereby forming a resin member 30; Includes. Each step will be described in detail below.

[0011] (a) Step of disposing the resin layer 31 Here, a resin sheet in an A-stage state prepared in advance is attached to the support 35, thereby disposing the resin layer 31 in an A-stage state as shown in FIG. 1A. The resin sheet can be attached using, for example, a vacuum laminator. Specifically, the pressure is reduced to a predetermined vacuum level, and the diaphragm is pressed to apply pressure. The disposition of the resin layer 31 in this process is not limited to the attachment of a resin sheet, and the resin layer 31 in an A-stage state may be disposed, for example, by applying an uncured resin onto the support 35. Here, the A-stage state refers to an uncured state. The viscosity of the resin layer 31 in the A-stage state, specifically, in the uncured state, is adjusted based on the specific gravity of the resin layer 31 and the weight of the light-emitting element 1 so that the light-emitting element 1 sinks under its own weight so that the second surface 12 of the semiconductor laminate 10 is exposed. Furthermore, the A-stage is not liquid, and is not fluid. For example, a liquid resin material containing a solvent such as cyclohexane is applied onto a support, and then most of the solvent is volatilized, leaving the material in a non-flowing state on the support, which is called the A-stage state or uncured state.

[0012] In addition, the resin constituting the resin layer 31 may be a thermosetting resin, such as a silicone resin, an epoxy resin, or an acrylic resin. The resin layer 31 may be arranged by, for example, roll coating, spraying, compression molding, or the like. The resin layer 31 is preferably thicker than the thickness t (the distance between the first surface 11 and the second surface 12) of the semiconductor laminate 10 of the light-emitting element 1. Alternatively, the resin layer 31 may be thinner than the thickness t of the semiconductor laminate 1 of the light-emitting element 1. When the resin layer 31 is thinner than the thickness t of the semiconductor laminate 1 of the light-emitting element 1, the resin layer 31 can be arranged so that the entire side surface 13 of the semiconductor laminate 10 of the light-emitting element 1 is covered with the resin layer 31 by utilizing the wetting up of the resin onto the side surface 13 in the step of sinking the light-emitting element 1 described later.

[0013] (b) Step of placing the light-emitting element 1 1B, while maintaining the resin layer 31 arranged on the support 35 in the A-stage state, the light emitting element 1 is placed on the upper surface of the resin layer 31 with the upper surface of the resin layer 31 facing the first surface 11 of the light emitting element 1. The light emitting elements 1 are placed at a predetermined distance depending on the size of the intended light emitting device 100. Specifically, the light emitting elements 1 are arranged, for example, in a matrix at predetermined intervals taking into account the thickness of the resin member 30 covering the side surface 13 of the semiconductor laminate 10 of the light emitting element 1.

[0014] The method of mounting the light-emitting elements 1 on the upper surface of the resin layer 31 is not particularly limited, and the light-emitting elements 1 may be mounted one by one in order, or a plurality of light-emitting elements 1 may be mounted all at once. For example, when a plurality of light-emitting elements 1 are mounted all at once, a plurality of light-emitting elements are prepared by being arranged on a support (hereinafter, referred to as a second support) other than the support on which the above-mentioned resin layer 31 is arranged, via a photosensitive adhesive. Next, a laser is irradiated onto the adhesive from the second support side, and the plurality of light-emitting elements are peeled off from the second support, so that the light-emitting elements 1 can be transferred all at once onto the upper surface of the resin layer 31.

[0015] The semiconductor laminate 10 of the light-emitting element 1 includes, for example, a substrate such as sapphire or gallium nitride, an n-type semiconductor layer and a p-type semiconductor layer disposed on the substrate, and a light-emitting layer sandwiched between them. The light-emitting element 1 further includes a first electrode electrically connected to the n-type semiconductor layer, and a second electrode electrically connected to the p-type semiconductor layer. The semiconductor laminate 10 does not necessarily have to include a substrate. The structure of the light-emitting layer may be a structure having a single active layer such as a double heterostructure or a single quantum well structure (SQW), or a structure having a group of active layers such as a multiple quantum well structure (MQW). The light-emitting layer can emit visible light or ultraviolet light. The light-emitting layer can emit visible light ranging from blue to red. An example of a semiconductor laminate 13 including such a light-emitting layer is InxAlyGa 1-x-yN (0≦x, 0≦y, x+y≦1). The semiconductor laminate 13 can include at least one light-emitting layer capable of emitting the above-mentioned light. For example, the semiconductor laminate 13 may have a structure including one or more light-emitting layers between an n-type semiconductor layer and a p-type semiconductor layer, or may have a structure in which a structure including an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer in order is repeated multiple times. When the semiconductor laminate 13 includes multiple light-emitting layers, the semiconductor laminate 13 may include light-emitting layers having different emission peak wavelengths, or may include light-emitting layers having the same emission peak wavelength. The emission peak wavelengths may vary by about several nm. The combination of emission peak wavelengths can be appropriately selected. For example, when the semiconductor laminate 13 includes two light-emitting layers, the light-emitting layers can be selected from combinations of blue light and blue light, green light and green light, red light and red light, ultraviolet light and ultraviolet light, blue light and green light, blue light and red light, or green light and red light. The light emitting layer may include a plurality of active layers having different emission peak wavelengths, or may include a plurality of active layers having the same emission peak wavelength.

[0016] (c) Step of sinking the light emitting element 1 Here, the resin layer 31 is heated at a first temperature to reduce the viscosity of the resin layer 31. As a result, the light emitting element 1 is caused to sink due to its own weight so that the second surface 12 of the semiconductor laminate 10 is exposed from the upper surface of the resin layer 31. The first temperature for heating the resin layer 31 is appropriately set so that the viscosity of the resin material constituting the resin layer 31 in the A-stage state is reduced, and as shown in FIG. 1C, the second surface 12 of the semiconductor laminate 10 is exposed and the resin of the resin layer 31 contacts the entire side surface 13 of the semiconductor laminate 10. For example, the first temperature is set to a temperature at which a desired sinking state is achieved by referring to a database that stores the sinking state of the light-emitting element when the temperature at which the resin layer is heated is changed, with respect to the type of resin material constituting the resin layer and its viscosity in the A-stage state, as well as the shape and weight of the light-emitting element. Here, the sinking state of the light-emitting element refers to the positional relationship between the upper surface of the resin layer between the light-emitting elements and the electrode formation surface of the light-emitting element, etc. That is, the database to be referred to stores, for example, the temperature at which the upper surface of the resin layer between the light-emitting elements placed adjacent to each other is positioned substantially on the same plane as the electrode formation surface of the light-emitting element, the temperature at which the upper surface of the resin layer between the light-emitting elements is positioned below the plane including the electrode formation surface of the light-emitting element, the temperature at which the upper surface of the resin layer between the light-emitting elements is positioned above the plane including the electrode formation surface of the light-emitting element, and the like, and is appropriately selected based on the stored information and taking into consideration the final shape of the light-emitting device to be manufactured. For example, in the case of the resin layer 31 containing a thermosetting silicone resin, an epoxy resin, or an acrylic resin, the first temperature is a temperature in the range of 70° C. to 100° C. The heating time can be, for example, 10 minutes or more. In addition, the first temperature does not necessarily need to be maintained at a specific temperature for a predetermined time, and may be raised continuously. That is, the range from the temperature at which the temperature rise starts to the temperature at which it ends (for example, the second temperature) may include a temperature range at which the light-emitting element can be sunk into the resin layer in the A-stage state, thereby achieving the desired sunk state. For example, if the second temperature described below is 150°C, it is preferable to raise the temperature from about 60°C to 150°C over, for example, about one hour, and it is particularly preferable to gradually raise the temperature from 70°C to 100°C, which includes the first temperature.

[0017] (d) A step of hardening the resin layer 31 to form the resin member 30 Here, the resin layer 31 is heated at a second temperature higher than the first temperature and cured in a state in which the second surface 12 is exposed. In this way, the resin member 30 is formed. The second temperature for curing the resin layer 31 is appropriately set based on the curing temperature of the resin material constituting the resin layer 31. For example, in the case of the resin layer 31 containing a thermosetting silicone resin, an epoxy resin, or an acrylic resin, the second temperature is a temperature in the range of 150° C. to 200° C. The heating time can be, for example, from 1 hour to 8 hours. The rise in temperature from the first temperature in the step of sinking the light-emitting element 1 to the second temperature in this step may be performed by continuously raising the temperature to the second temperature without lowering it from the first temperature, or by first lowering the temperature from the first temperature, for example to room temperature (20±5°C), and then raising it to the second temperature. This can be set appropriately taking into account the efficiency of the manufacturing process, etc.

[0018] After the resin layer 31 is hardened, the resin member 30 is cut between adjacent light-emitting elements 1 as shown in Fig. 1D. The side surface 13 of each light-emitting element 1 is covered with the resin member 30 of a predetermined thickness in the direction in which the light-emitting elements 1 are adjacent to each other. The support is then removed from the light emitting device, as shown in FIG. 1E.

[0019] In this manner, for example, a light emitting device including one light emitting element 1 and having side surface 13 of light emitting element 1 covered with a resin member of a predetermined thickness can be manufactured. This cutting step is performed as necessary. For example, by cutting the resin member so as to include one light-emitting element 1, a light-emitting device having one light-emitting element can be obtained. Alternatively, by cutting the resin member 30 so as to include multiple light-emitting elements 1, a light-emitting device having multiple light-emitting elements 1 can be obtained. When multiple light-emitting elements 1 are included, a linear light-emitting device in which multiple light-emitting elements 1 are arranged in a row can be obtained. Alternatively, a planar light-emitting device in which multiple light-emitting elements are arranged in a matrix can be obtained.

[0020] According to the manufacturing method of the light emitting device of the first embodiment, the resin layer is heated at a first temperature lower than the second temperature, which is the curing temperature at which the resin layer is cured, to reduce the viscosity of the resin layer and to sink the light emitting element by its own weight so that the second surface 12 of the semiconductor laminate is exposed. This makes it possible to manufacture a light emitting device in which the surfaces except for one surface of the laminate structure of the light emitting element are covered with a resin layer simply by changing the temperature without using special equipment such as weighting, and therefore the light emitting device can be manufactured at low cost. Furthermore, the method for producing the light emitting device of the first embodiment can be modified in various ways as described below, making it possible to produce various light emitting devices.

[0021] Variation 1 The manufacturing method of the light emitting device of the first modification is a manufacturing method of a light emitting device including a light emitting element 1 and a resin member 30 including a phosphor that converts the wavelength of the light from the light emitting element 1. Specifically, in the method for manufacturing a light emitting device according to Modification 1 of Embodiment 1, a resin containing phosphor particles is used as resin layer 31. By sinking light emitting element 1 in resin layer 31 containing phosphor particles and curing it, a light emitting device can be manufactured in which the surface of the semiconductor laminate except for second surface 12 is covered with a wavelength conversion member.

[0022] In addition, the specific gravity and / or viscosity of the resin layer 31 containing particles of phosphors or the like changes depending on the particle size, particle size distribution, content, etc. of the phosphor particles contained in the resin. Therefore, the A-stage state can be appropriately set taking these factors into consideration.

[0023] The phosphor is an yttrium-aluminum-garnet phosphor (e.g., Y3(Al,Ga)5O 12 :Ce), lutetium aluminum garnet phosphors (e.g., Lu3(Al,Ga)5O 12 :Ce), terbium aluminum garnet phosphors (e.g., Tb3(Al,Ga)5O 12 :Ce), CCA phosphors (e.g., Ca 10 (PO4)6Cl2:Eu), SAE phosphors (e.g., Sr4Al 14 O25 : Eu), chlorosilicate phosphors (e.g., Ca8MgSi4O 16 Cl2: Eu), β - sialon phosphors (e.g., (Si,Al)3(O,N)4: Eu), α - sialon phosphors (e.g., Mz(Si,Al) 12 (O,N) 16 : Eu (where 0 < z ≤ 2 and M is Li, Mg, Ca, Y, and lanthanide elements excluding La and Ce)), SLA - type phosphors (e.g., SrLiAl3N4: Eu), CASN - type phosphors (e.g., CaAlSiN3: Eu) or SCASN - type phosphors (e.g., (Sr,Ca)AlSiN3: Eu) and other nitride - type phosphors, KSF - type phosphors (e.g., K2(Si,Al)F6: Mn), KSAF - type phosphors (e.g., K2Si 0.99 Al 0.01 F 5.99 : Mn) or MGF - type phosphors (e.g., 3.5MgO·0.5MgF2·GeO2: Mn) and other fluoride - type phosphors, phosphors having a perovskite structure (e.g., CsPb(F,Cl,Br,I)3), or quantum dot phosphors (e.g., CdSe, InP, AgInS2 or AgInSe2) etc. can be used. As the phosphor added to the resin member 30, one type of phosphor may be used, or a plurality of types of phosphors may be used.

[0024] Also, the KSAF - type phosphor may have a composition represented by the following formula (I). M2[Si p Al q Mn r F s (I)

[0025] In formula (I), M represents an alkali metal and may contain at least K. Mn may be a tetravalent Mn ion. p, q, r, and s may satisfy 0.9 ≦ p + q + r ≦ 1.1, 0 < q ≦ 0.1, 0 < r ≦ 0.2, 5.9 ≦ s ≦ 6.1. Preferably, 0.95 ≦ p + q + r ≦ 1.05 or 0.97 ≦ p + q + r ≦ 1.03, 0 < q ≦ 0.03, 0.002 ≦ q ≦ 0.02 or 0.003 ≦ q ≦ 0.015, 0.005 ≦ r ≦ 0.15, 0.01 ≦ r ≦ 0.12 or 0.015 ≦ r ≦ 0.1, 5.92 ≦ s ≦ 6.05 or 5.95 ≦ s ≦ 6.025. For example, K2[Si 0.946 Al 0.005 Mn 0.049 F 5.995 , K2[Si 0.942 Al 0.008 Mn 0.050 F 5.992 , K2[Si 0.939 Al 0.014 Mn 0.047 F 5.986 . According to such a KSAF-based phosphor, high luminance and narrow half-value width of the emission peak wavelength can be obtained for red emission.

[0026] Modification 2 The method for manufacturing a light-emitting device according to Modification 2 is a method for manufacturing a light-emitting device including a light-emitting element 1 and a resin member 30 containing a light diffusing agent that reflects light from the light-emitting element 1. Specifically, in the method for manufacturing a light-emitting device according to Modification 2 of Embodiment 1, as the resin layer 31, for example, a resin containing particles of a light diffusing agent such as titanium oxide, silicon oxide, aluminum oxide, or zinc oxide is used. By immersing the light-emitting element 1 in the resin layer 31 containing particles of the light diffusing agent and curing it, for example, a light-emitting device provided with a light reflection layer on the surface excluding the second surface 12 can be manufactured.

[0027] The light-emitting device manufactured by the manufacturing method of Modification 2 above can be applied to the manufacture of a light-emitting device that emits light from the side of the second surface 12 where the electrodes are arranged, for example.

[0028] Furthermore, in the manufacturing method of Modification 2, a light emitting device can be manufactured in which the resin member 30 is not disposed on the first surface 11 of the light emitting element 1 by removing the resin member 30 disposed on the first surface 11 of the light emitting element 1, or by sinking the light emitting element 1 into the resin layer 31 and curing it so that the first surface 11 of the light emitting element 1 is in contact with the support 35. The light emitting device manufactured in this manner can reflect light emitted from the side surface of the light emitting element 1 and emit it from the first surface 11 of the light emitting element 1. In addition, the specific gravity and / or viscosity of the resin layer 31 containing particles such as a light diffusing agent varies depending on the particle size, particle size distribution, content, etc. of the particles of the light diffusing agent contained in the resin. Therefore, the A-stage state may be appropriately set taking these into consideration.

[0029] Variation 3 The manufacturing method of the light-emitting device of variant example 3 is a manufacturing method of a light-emitting device that includes a light-emitting element 1, a light-reflecting layer (hereinafter referred to as the first reflective layer) provided above the first surface 11 of the light-emitting element 1, and a light-transmitting resin member 30 provided to cover the side surface 13 of the light-emitting element 1.

[0030] Specifically, in the manufacturing method of the light emitting device of the first embodiment, as shown in Fig. 1F, the cured first light reflecting layer 25 is placed on the upper surface of the support 35, and the resin layer 31 is placed on the first light reflecting layer 25. The first light reflecting layer 25 can be prepared by forming or purchasing a pre-cured layer and then placing it on the support. Alternatively, the first light reflecting layer 25 can be prepared by placing a liquid light reflecting member on the support and then curing it by heating or the like.

[0031] Next, as shown in FIG. 1G, the light emitting element 1 is sunk into the resin layer 31 and cured, and then separated into individual pieces with the first light reflecting layer 25 remaining above the first surface 11 of the light emitting element 1. This makes it possible to manufacture a light emitting device with so-called batwing light distribution, in which light emitted upward from first surface 11 of light emitting element 1 is suppressed and light is efficiently emitted from side surface 13 of light emitting element 1. In the manufacturing method of the third modified example, a resin member 30 having a wavelength conversion function may be used in which a phosphor is contained in the resin layer 31.

[0032] In addition, the manufacturing method of the light-emitting device of variant example 3 makes it possible to change the distance between the light-reflecting layer 25 and the first surface 11 of the light-emitting element 1 by adjusting the thickness of the resin layer 31 or the viscosity of the resin layer 31, thereby adjusting the position at which the light-emitting element 1 is sunk within the resin layer 31. This makes it possible to manufacture light emitting devices with different bat wing light distribution characteristics.

[0033] Variation 4 The manufacturing method of the fourth modification includes, in the manufacturing method of the light emitting device according to the first embodiment or the first to third modifications, a step of forming a resin member 30 and then disposing a light reflecting layer 24 (hereinafter, referred to as a second light reflecting layer) covering the second surface 12 and the side surface of the electrode 20 as shown in FIG. 1H. The step of disposing the second light reflecting layer 24 includes disposing the second light reflecting layer 24 on the upper surface of the resin member 30 and the second surface 12 of the light emitting element 1 as shown in FIG. 1H by using, for example, roll coating, spraying, compression molding, or the like. At this time, the second light reflecting layer 24 is disposed so as to cover the side surface of the electrode 20 and expose the upper surface of the electrode 20. Alternatively, the second light reflecting layer 24 may be disposed so as to cover the side surface and the upper surface of the electrode 20, and then the upper surface of the second light reflecting layer 24 may be ground to remove a part of the electrode 20 and a part of the second light reflecting layer 24, thereby exposing the surface of the electrode 20 from the second light reflecting layer 24. The surface of the electrode 20 exposed from the second light reflecting layer 24 becomes the new upper surface of the electrode 20.

[0034] The light emitting device manufactured by the manufacturing method of the above variant example 4 includes a second light reflective layer 24 covering the second surface 12 and the side surface of the electrode 20, and thereby can reflect light traveling toward the second surface 12 and emit it from the first surface 11, making it possible to efficiently emit the emitted light.

[0035] Variation 5 The manufacturing method of the fifth modification example includes, in addition to the manufacturing method of the third modification example, a step of arranging a second light reflecting layer that covers the second surface 12 and the side surfaces of the electrode 20 of the fourth modification example.

[0036] The light emitting device 100A manufactured by the manufacturing method of the above-mentioned variant example 5 includes, as shown in FIG. 1I, a first light reflecting layer 25 provided above the light emitting element 1, a translucent resin member 30 provided so as to cover the light emitting surface and side surfaces of the light emitting element 1, and a second light reflecting layer 24 covering the surface on which the electrodes of the light emitting element are formed and the side surfaces of the electrodes 21 and 22.

[0037] In the light emitting device 100A, the light reflecting layers 24 and 25 may be formed of a resin containing titanium oxide, silicon oxide, aluminum oxide, zinc oxide, or the like as a light diffusing agent. Examples of such resin materials include silicone resin, epoxy resin, and acrylic resin. The light reflecting layers 24 and 25 may be metal layers such as platinum, silver, rhodium, and aluminum, or distributed Bragg reflector films (Distributed Bragg Reflectors: DBRs). The light reflecting layers 24 and 25 may be inorganic members. Moreover, it is preferable that the distance d1 from the side surface of the light emitting element 1 to the outer side surface of the resin layer 30 is longer than the distance d2 from the upper surface of the light emitting element 1 to the upper surface of the resin layer 30. This makes it easier for the light emitted from the side surface of the light emitting element 1 to propagate to the side surface side of the resin layer 30 than to the upper surface side, and it is possible to increase the proportion of light extracted from the side of the light emitting device 100A. It is preferable that the distance d1 from the side surface of the light emitting element 1 to the side surface of the resin layer 30 is about 1.5 to 2.5 times the distance d2 from the upper surface of the light emitting element 1 to the upper surface of the resin layer 22, and more preferably, the distance d1 is about twice the distance d2.

[0038] Moreover, the light emitting device 100A can obtain white light by disposing a sheet-like wavelength conversion member (hereinafter referred to as wavelength conversion sheet) containing the above-mentioned phosphor above. For example, white light can be obtained by combining a light emitting device capable of emitting blue light with a wavelength conversion sheet containing a phosphor capable of emitting yellow light. Alternatively, a light emitting device capable of emitting blue light may be combined with a wavelength conversion sheet containing a phosphor capable of emitting red light (hereinafter referred to as red phosphor) and a phosphor capable of emitting green light (hereinafter referred to as green phosphor). A light emitting device capable of emitting blue light may be combined with a plurality of wavelength conversion sheets. As the plurality of wavelength conversion sheets, for example, a wavelength conversion sheet containing a red phosphor and a wavelength conversion sheet containing a green phosphor can be selected. A light emitting device having a light emitting element capable of emitting blue light and a translucent member containing a red phosphor may be combined with a wavelength conversion sheet containing a green phosphor.

[0039] <Embodiment 2> The manufacturing method of the light emitting device of embodiment 2 according to the present disclosure is a manufacturing method of a light emitting device 200 having a light emitting device 100 containing a phosphor (hereinafter referred to as a first phosphor) in a resin member 30 manufactured by a manufacturing method according to variant 1 of embodiment 1, and further having a resin layer 130 disposed on top of the resin member 30 of the light emitting device 100, the resin layer 130 containing a second phosphor different from the first phosphor.

[0040] First, a light emitting device 100 including a first phosphor in a resin member 30 is prepared by a manufacturing method according to the first modification of the first embodiment. In parallel with the preparation of the light emitting device 100, an uncured resin containing a second phosphor is placed on the support 35 in the same manner as in the step (a) of placing the resin layer 31 in embodiment 1, and a resin layer 131 in an A-stage state shown in FIG. 2A is placed. The viscosity and the like of the resin layer 131 in an uncured state are adjusted based on the specific gravity of the resin layer 131 and the weight of the light emitting device 100 so that the light emitting device 100 sinks under its own weight so that the second surface 12 of the semiconductor laminate 10 is exposed. The resin contained in the resin layer 131 can be the same as that in embodiment 1. Preferably, the same resin as that constituting the resin layer 31 in embodiment 1 is used.

[0041] Next, in the same manner as in the step (b) of mounting the light-emitting element 1 in embodiment 1, while maintaining the A-stage state of the resin layer 131 arranged on the support 35, the light-emitting device 100 is mounted with the upper surface of the resin layer 131 facing the light-emitting surface of the light-emitting device 100 as shown in Fig. 2B. The light-emitting devices 100 are arranged in the intended light-emitting device 200 at predetermined intervals, for example in a matrix, taking into consideration the thickness of the resin member 130 covering the side surfaces of the light-emitting device 100.

[0042] Next, similarly to the step (c) of sinking the light-emitting element 1 in embodiment 1, as shown in FIG. 2C, the resin layer 131 is heated at a first temperature to reduce the viscosity of the resin layer 131, and the light-emitting device 100 is caused to sink by its own weight so that the electrode formation surface of the light-emitting device 100 is exposed. Thereafter, similarly to the step (d) of curing resin layer 31 to form resin member 30 in embodiment 1, resin layer 131 is heated and cured at a second temperature higher than the first temperature, and cut so that resin members 130 covering the side surfaces of each light emitting device 100 with a predetermined thickness are disposed between adjacent light emitting devices 100, as shown in Fig. 2D. Fig. 2E shows a cross section of light emitting device 200 after each support has been removed.

[0043] According to the manufacturing method of the light emitting device of the above embodiment 2, the light emitting device 200 including the light emitting element 1, the resin member 30 covering the light emitting element 1 except for the second surface 12, and the second resin member 130 covering the resin member 30 can be manufactured without using special equipment for loading, etc., and can be manufactured inexpensively.

[0044] In the light-emitting devices of the above-mentioned embodiments 1 and 2, (c) in the step of sinking the light-emitting element 1 or the light-emitting device 100, an example is shown in which the light-emitting element 1 or the light-emitting device 100 is sinked so that the surface of the resin layer 30 or 130 between adjacent light-emitting elements 1 or light-emitting devices 100 becomes substantially flat. However, the method for manufacturing a light emitting device according to the present disclosure is not limited to this. For example, as shown in FIG. 3A, the light emitting element 1 or the light emitting device 100 may be recessed so that the surface of the resin layer 30 or 130 between adjacent light emitting elements 1 or light emitting devices 100 becomes a concave curved surface. To achieve this state, the viscosity of the resin layer 31 or 131 in the A-stage state, the first heating temperature, and the wettability of the resin layer 31 or 131 to the side surface of the light-emitting element 1 or light-emitting device 100 may be appropriately adjusted. FIG. 3B shows a cross section of the light emitting device after the resin layer 30 has been cured and cut from the state shown in FIG. 3A, and the support 35 has been removed. The light emitting device shown in FIG. 3B may also include a light reflecting layer (corresponding to the second light reflecting layer 24 shown in FIG. 1I) that covers the second surface of the light emitting element and the side surface of the electrode, and further covers the inclined surface of the resin layer 30 continuously from the second surface of the light emitting element. With the above configuration, when the resin layer 30 is made of a resin having translucency, light can be reflected by the inclined surface of the resin layer 30 covered with the light reflecting layer and extracted to the outside. In order to manufacture such a light emitting device, a light reflecting layer that covers the second surface of the light emitting element, the side surface of the electrode, and the recessed surface of the resin layer 30 may be disposed and cured at the stage before singulation shown in FIG. 3A, and then singulation may be performed.

[0045] Furthermore, as shown in FIG. 4A, the light emitting element 1 or the light emitting device 100 may be sunk so that the resin layer 30 or 130 covers part of the side surface of the light emitting element 1 or the side surface of the light emitting device 100. To sink it in this state, the weight of the light-emitting element 1 or light-emitting device 100, the viscosity of the resin layer 31 or 131, the first heating temperature, and the wettability of the resin layer 31 or 131 to the side surface of the light-emitting element 1 or light-emitting device 100 may be appropriately adjusted. FIG. 4B shows a cross section of the light emitting device after the resin layer 30 has been cured and cut from the state shown in FIG. 4A, and the support 35 has been removed.

[0046] <Embodiment 3> The manufacturing method of the light emitting device of embodiment 3 according to the present disclosure differs from the manufacturing method of the light emitting device of embodiment 1 in that it includes a step of preparing a resin layer 31 having a recess 33. In embodiment 3, the recess 33 includes a bottom surface 33a on which the light emitting element 1 is mounted and a side surface 33b facing the side surface 13 of the mounted light emitting element 1 at a predetermined interval, and in the step of mounting the light emitting element, the light emitting element 1 is mounted on the bottom surface 33a. Except for the above points, the method for manufacturing the light emitting device of the third embodiment is configured similarly to the method for manufacturing the light emitting device of the first embodiment. The method for manufacturing the light emitting device of the third embodiment will be described in detail below, focusing on the differences from the method for manufacturing the light emitting device of the first embodiment.

[0047] (a) A step of preparing a resin layer 31 having a recess 33 The process of preparing the resin layer 31 having the recess 33 may be carried out by purchasing the resin layer 31 having the recess 33, or by providing the recess 33 in the resin layer 31 by the following steps (a1) and (a2). (a1) Step of disposing the resin layer 31 Here, a resin sheet in an A-stage state prepared in advance is attached onto the support 35 to arrange the resin layer 31 in an A-stage state as shown in FIG. 5A. The resin sheet can be attached using, for example, a vacuum laminator. Alternatively, for example, the resin layer 31 in an A-stage state may be arranged by applying an uncured resin onto the support 35. Here, the A-stage state refers to the uncured state described in the first embodiment.

[0048] (a2) Step of forming a recess 33 on the upper surface of the resin layer 31 Here, after the resin layer 31 is disposed on the support 35, a recess is provided on the upper surface of the resin layer 31 at a position where the light emitting element 1 is to be placed before the light emitting element 1 is placed thereon. For example, a mold 50 is pressed to a predetermined depth from the upper surface of the resin layer 31 in the A-stage state as shown in Figs. 5B and 5C, and then the mold 50 is removed to provide a recess 33 in the resin layer 31 as shown in Fig. 5D. The recess 33 may be formed by a die in which a plurality of molds 50 are integrated, or may be formed by pressing the mold 50 to a predetermined depth at a predetermined position (a position where the light emitting element is to be placed) while sequentially moving the mold 50 adsorbed to the tip of a collet of a die bonding device.

[0049] The shape of the recess 33 is set so that the light emitting element 1 is in a desired sinking state when the resin layer 31 is heated to a first temperature, with respect to the type of resin material forming the resin layer 31, its viscosity in the A-stage state, and the shape and weight of the light emitting element. That is, the sinking state of the light emitting element 1 when the resin layer 31 is heated to a first temperature with the light emitting element 1 placed on the bottom surface of the recess 33 of the resin layer 31 varies depending on the type of resin material forming the resin layer 31, its viscosity in the A-stage state, the shape and weight of the light emitting element 1, the shape of the recess 33, the interval between adjacent recesses 33, and the like. In addition, even if the resin material forming the resin layer, the viscosity of the resin material in the A-stage state, and the first temperature are the same, the sinking state of the light emitting element 1 may depend on the shape of the recess 33, the interval between adjacent recesses 33, and the like. For example, the sinking state of the light emitting element 1 may be in a state (hereinafter referred to as state 1) in which the upper surface of the resin layer between adjacent light emitting elements is substantially flush with the electrode formation surface of the light emitting element. The sinking state of the light-emitting element 1 may be, for example, a state in which the upper surface of the resin layer between the light-emitting elements is located below a plane including the electrode formation surfaces of the light-emitting elements (hereinafter referred to as state 2). Furthermore, the sinking state of the light-emitting element 1 may be, for example, a state in which the upper surface of the resin layer between the light-emitting elements is located above a plane including the electrode formation surfaces of the light-emitting elements (hereinafter referred to as state 3). A specific method for setting the recess will be described later since it is related to the first temperature and the like.

[0050] (b) Step of placing the light-emitting element 1 Here, while maintaining the resin layer 31 in the A-stage state, the light-emitting elements 1 are placed on the bottom surfaces 33a of the recesses 33 as shown in Fig. 5E. The light-emitting elements 1 are preferably placed such that their central axes (central axes perpendicular to the bottom surfaces) coincide with the central axis of the recesses 33 (central axes perpendicular to the bottom surfaces 33a). Here, they are considered to coincide if the deviation between the central axes is within the range of variation when the light-emitting elements 1 are placed.

[0051] The method of mounting each of the light-emitting elements 1 on the bottom surface 33a of the recess 33 is not particularly limited, and the light-emitting elements 1 may be mounted one by one in order, or a plurality of light-emitting elements 1 may be mounted collectively. For example, when a plurality of light-emitting elements 1 are mounted collectively, a plurality of light-emitting elements are prepared by being arranged on a support (hereinafter, referred to as a second support) other than the support on which the above-mentioned resin layer 31 is arranged, via a photosensitive adhesive. Next, a laser is irradiated onto the adhesive from the second support side to peel off the plurality of light-emitting elements from the second support, so that the light-emitting elements 1 can be transferred collectively to the bottom surface 33a of the recess 33.

[0052] (c) Step of sinking the light emitting element 1 Here, the resin layer 31 is heated at a first temperature to reduce the viscosity of the resin layer 31, and as shown in FIG. 5F, the resin on the sidewall surrounding the softened recess 33 covers the side of the semiconductor laminate 10, and the light-emitting element 1 is submerged so that the second surface 12 of the semiconductor laminate 10 is exposed from the upper surface of the resin layer 31.

[0053] (d) A step of hardening the resin layer 31 to form the resin member 30 Here, the resin layer 31 is heated at a second temperature higher than the first temperature and cured in a state in which the second surface 12 is exposed. In this way, the resin member 30 is formed.

[0054] Thereafter, in the same manner as in the first embodiment, the resin member is cut between adjacent light emitting elements 1 to separate the light emitting device from the support body.

[0055] Setting the first temperature and the shape of the recess The first temperature and the shape of the recess 33 are set to be in a desired state of state 1 to state 3, taking into consideration the type of resin material forming the resin layer 31, the viscosity in the A-stage state, and the shape and weight of the light emitting element. For example, the setting of the shape of the recess 33 can be set by referring to a database storing the viscosity of the resin material in the A-stage state, the first temperature, the shape of the recess 33, and the interval between adjacent recesses 33, which are optimized to be in the desired states of state 1 to state 3, taking into consideration the type of resin material forming the resin layer 31, and the shape and weight of the light emitting element. In this database, for example, parameters such as the viscosity in the A-stage state, the first temperature, the shape of the recess 33, and the interval between adjacent recesses 33, which are optimized to be in states 1 to 3, are stored for each resin material for the light emitting element to be used. Each parameter can be obtained by experiment or the like. Note that, for example, it is preferable that the database stores parameters optimized for each combination of a plurality of resin materials to be used and a plurality of light emitting elements to be used, which makes it possible to select various combinations of the resin material and the light emitting element, and further makes it possible to select states 1 to 3 according to the purpose.

[0056] Furthermore, it has been confirmed that the manufacturing method of the light-emitting device of this embodiment 3 can maintain the positional accuracy when the light-emitting element 1 is placed on the bottom surface of the recess 33, depending on the shape of the recess 33, even after the light-emitting element 1 is sunk into the resin layer 31 and hardened.

[0057] The maintenance of this positional accuracy mainly depends on the width W1 and height H1 of the light emitting element 1, the depth D33 and width W33 of the recess 33, and the width W50 of the wall between adjacent recesses 33, as shown in FIG. 6. In other words, in order to maintain this positional accuracy, the depth D33 and width W33 of the recess 33 and the width W50 of the wall between adjacent recesses 33 are appropriately set in consideration of the width W1 and height H1 of the light emitting element 1 and the depth D33 and width W33 of the recess 33, but in order to effectively obtain the effect of maintaining this positional accuracy, it is preferable that the depth D33 of the recess 33 is larger than the height H1 of the light emitting element 1. The recess 33 is formed to a depth of, for example, 100 μm to 200 μm, and is preferably deeper than the thickness of the light emitting element in order to maintain the positional accuracy when the light emitting element is arranged. For example, when a light emitting element with a thickness of 150 μm is arranged, the recess 33 is formed deeper than 150 μm. Here, the thickness of the light emitting element refers to the thickness of the part excluding the thickness of the electrode.

[0058] As described above, in the manufacturing method for the light emitting device of embodiment 3, by adjusting the shape of recesses 33 and the interval between the recesses, the positional accuracy of the light emitting element when placed can be maintained even after the resin layer is cured. Therefore, it is preferable to set the first temperature and the shape of the recess, taking into consideration the resin forming the resin layer 31 and the shape and weight of the light-emitting element, so as to achieve the desired state among states 1 to 3 and obtain the effect of suppressing misalignment. That is, the shape of the recesses 33 is preferably set by referring to a database that stores the A-stage state of the resin, the first temperature, the shape of the recesses 33, and the interval between adjacent recesses 33, each of which is optimized to achieve a desired state of states 1 to 3 and to obtain the effect of suppressing misalignment, taking into consideration the shape and weight of the resin forming the resin layer 31 and the light emitting elements. It goes without saying that this database preferably stores parameters optimized for each combination of multiple resins and multiple light emitting elements that will be used, for example.

[0059] According to the method for manufacturing the light emitting device of the third embodiment configured as above, the positional accuracy of the light emitting elements can be improved, and a light emitting device having a desired configuration can be easily manufactured.

[0060] <Embodiment 4> The manufacturing method of the fourth embodiment according to the present disclosure is a method for manufacturing a light emitting module in which a plurality of light sources are arranged, for example, in a matrix on a light guide plate. A specific description will be given below with reference to Figs. 7A to 7C. In the following description, an example will be described in which a plurality of light emitting devices 100 manufactured by the manufacturing method of the first embodiment are used as light sources. However, the manufacturing method of the fourth embodiment is not limited thereto, and for example, the light emitting element 1 shown in the first embodiment may be used as a light source, or a light emitting device manufactured by the manufacturing method of the second or third embodiment may be used as a light source.

[0061] In the manufacturing method of the fourth embodiment, first, a light guide plate 310 is prepared. The light guide plate 310 is a member that spreads light emitted from a light emitting device, which is a light source, in a planar shape, and is a substantially plate-like member having a second main surface 312 that is a light extraction surface and a first main surface 311 located on the opposite side. The first main surface 311 is provided with a first recess 313. The first recess 313 is a portion where the light emitting device 100 is arranged. The second main surface 312 of the light guide plate 310 may have a second recess 315 arranged at a position corresponding to the recess 313 of the first main surface 311. The light guide plate 310 shown in FIG. 5A shows an example having two first recesses 313. The first recesses 313 can be arranged in a matrix on the first main surface 311, for example.

[0062] Such a light guide plate 310 can be prepared by molding, for example, injection molding, transfer molding, thermal transfer, or the like. The material of the light guide plate 310 can be, for example, a thermoplastic resin such as acrylic, polycarbonate, cyclic polyolefin, polyethylene terephthalate, or polyester, a thermosetting resin such as epoxy or silicone, or glass. The first recess 313 and the second recess 315 of the light guide plate 310 can be formed at the same time when the light guide plate 310 is molded. This can reduce misalignment during molding. The light guide plate 310 may be prepared by purchasing or molding a translucent plate that does not have the first recess 313 or the second recess 315, and performing a process of forming the first recess 313 and the second recess 315. Alternatively, the light guide plate 10 having the first recess 313 and the second recess 315 may be prepared by purchasing it.

[0063] The second recess 315 may be a pyramidal recess such as a cone or pyramidal recess, or a truncated cone or pyramidal recess. The second recess 315 can reflect light from the light emitting device 100 laterally. A light reflective member may be disposed inside the second recess 315. As the light reflective member, for example, a resin material containing a light diffusing agent such as titanium oxide, an insulating inorganic material such as an oxide or nitride, or a thin film of a conductive material such as a metal may be used.

[0064] Next, as shown in FIG. 7A, uncured resin is injected into each of first recesses 313 of prepared light guide plate 310, and resin filled portions 331 filled with resin in an A stage state are disposed. Next, as shown in Fig. 7B, while maintaining the A-stage state of the injected resin, light emitting device 100 is placed on resin filling section 331 such that the light emitting surface of each light emitting element faces resin filling section 331. Here, in this specification, the light emitting surface of the light emitting element facing resin filling section 331 also includes the case where the light emitting surface faces resin filling section 331 via a resin member as shown in Fig. 7B. 7C, resin filling section 331 is heated at a first temperature to reduce the viscosity of the resin in resin filling section 331, causing light emitting device 100 to sink under its own weight so that the electrode formation surface of light emitting device 100 is exposed, and resin filling section 331 is heated at a second temperature higher than the first temperature to harden with second surface 12 exposed. This places resin member 330 covering the surface of light emitting device 100 excluding the electrode formation surface within first recess 313.

[0065] According to the manufacturing method of the fourth embodiment described above, a light emitting module including a plurality of light emitting devices 100 on a light guide plate 310 can be manufactured at low cost.

[0066] In the above-described manufacturing method of the light emitting module of the fourth embodiment, an example in which the first recess 313 is provided in the light guide plate 310 has been described, but a through hole penetrating from the upper surface to the lower surface of the light guide plate 310 may be used instead of the first recess 313. In this case, for example, after the through hole is blocked on the lower surface side and a resin filling portion is disposed, the light emitting module can be manufactured in the same manner as in the case of the first recess 313. [Explanation of symbols]

[0067] 1 Light emitting element 10 Semiconductor laminate 11 Page 1 12 Side 2 13 Side 20 electrodes 21 1st electrode 22 2nd electrode 24 Light reflective layer (second light reflective layer) 25 Light reflective layer (first light reflective layer) 30, 130 Resin material 31, 131 Resin layer 35 Support 100, 200 Light emitting device 310 Light guide plate 311 Top surface 312 Bottom surface 313 First recess 315 Second recess 330 Resin parts 331 Resin filling section

Claims

1. A first surface, a second surface opposite to the first surface, and a side surface between the first surface and the second surface. and an electrode disposed on the second surface of the semiconductor stack. a semiconductor laminate having a side surface covered with a resin member, the method comprising the steps of: disposing a resin layer in an A-stage state on a support; The light-emitting element is disposed on the upper surface of the resin layer such that the upper surface of the resin layer faces the first surface. and placing the The resin layer is heated at a first temperature to reduce the viscosity of the resin layer and to The light emitting element is lowered by its own weight so that the second surface of the semiconductor laminate is exposed. The process of mixing The resin layer is heated at a second temperature higher than the first temperature, and the second surface is exposed. and curing the resin member in a curable state to form the resin member. A method for manufacturing a light emitting device comprising the steps of:

2. After forming the resin layer and before mounting the light emitting element, The resin layer is provided with a bottom surface on which the light emitting element is to be mounted and a light emitting element Providing a recess including a side surface facing the side surface at a predetermined interval, 2. The method according to claim 1, wherein the step of placing the light emitting element includes placing the light emitting element on the bottom surface. A method for manufacturing a light emitting device.

3. Before the step of disposing the resin layer, a bottom surface of the resin layer is provided at a position where the light emitting element is to be mounted. and a recess including a side surface facing the side surface of the light emitting element at a predetermined interval. providing a resin layer in a state In the step of disposing the resin layer, the resin layer in the A stage state having the recess is Placed on the support, 2. The method according to claim 1, wherein the step of placing the light emitting element includes placing the light emitting element on the bottom surface. A method for manufacturing a light emitting device.

4. The light emitting device according to any one of claims 1 to 3, wherein the resin layer contains a phosphor. Manufacturing method.

5. Any one of claims 1 to 4, wherein the thickness of the resin layer is greater than the thickness of the semiconductor laminate.

3. A method for producing the light emitting device according to claim 1.

6. The method for forming the resin layer includes forming a cured first light reflecting layer on the support, The light-emitting device according to any one of claims 1 to 5, further comprising a step of forming the resin layer on the light-emitting device. A method for manufacturing the device.

7. After the resin layer is cured to form the resin member, the second surface and the electrode are The method according to any one of claims 1 to 6, further comprising forming a second light reflecting layer covering the side surface. A method for manufacturing the light emitting device described above.

8. a first surface, a second surface opposite to the first surface, and a side surface between the first surface and the second surface; and an electrode disposed on the second surface of the semiconductor stack. providing a light source having at least the second surface exposed to the outside; A first main surface and a second main surface opposite to the first main surface, the first main surface being provided with a recess. preparing a light guide plate; disposing a resin layer in an A-stage state within the recess; The upper surface of the resin layer is opposed to the first surface of the light emitting element, placing the light source on The resin layer is heated at a first temperature to reduce a viscosity of the resin layer, and and lowering the light source by its own weight so that the second surface of the semiconductor laminate is exposed. With The resin layer is heated at a second temperature higher than the first temperature, and the second surface is exposed. and hardening the resin member in a curable state to form a resin member. A method for manufacturing a light emitting module comprising the steps of:

9. The light source is manufactured by the method for manufacturing a light emitting device according to any one of claims 1 to 7. The method for manufacturing a light emitting module according to claim 8 , comprising the light emitting device.

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