Method and apparatus for adjusting frequency of crystal device

Abstract

To provide a method for adjusting the frequency of a crystal device and a device for adjusting the frequency of a crystal device that can more accurately adjust a resonance frequency.SOLUTION: A method for adjusting the frequency of a crystal device includes: a measurement step (P2) of measuring a first resonance frequency of a crystal vibration element that has a crystal piece and an electrode located on the crystal piece and is bonded to a substrate by a conductive adhesive; and an adjustment step (P4) of adjusting the thickness of the electrode based on information held in advance related to the correspondence between the obtained first resonance frequency and the amount of adjustment of the thickness of the electrode. The correspondence specifies a value related to the amount of adjustment according to a third resonance frequency before sealing of the crystal vibration element inside the substrate, the sealing from which a predetermined second resonance frequency is to be obtained.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present disclosure relates to a method for adjusting the frequency of a crystal device and an apparatus for adjusting the frequency of a crystal device. [Background technology]

[0002] There is a crystal device having a crystal element that has a crystal blank that resonates at a predetermined resonant frequency and generates and outputs a signal using the resonance of this crystal blank. The final resonant frequency of this crystal device depends not only on the crystal blank, but also on the electrodes on both sides of the crystal blank and the bonding state of the conductive adhesive that connects the electrodes to the outside. Patent Document 1 describes a manufacturing process in which, in order to adjust the resonant frequency to an appropriate frequency, the crystal element is bonded to a package, the resonant frequency is measured, and electrodes are removed or added depending on the deviation between the measured value and the target resonant frequency. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2015-213204 A Summary of the Invention [Problem to be solved by the invention]

[0004] However, in the crystal vibration element that is bonded to the package in a state in which the thickness of one of the electrodes has changed in the above process, the state of distortion may change due to heating when the crystal vibration element is sealed in the package with a lid, etc. Conventionally, it has not been possible to adequately deal with changes in resonance frequency due to such distortion. Therefore, the present invention provides a method and apparatus for adjusting the frequency of a crystal device, which can adjust the resonant frequency more accurately. [Means for solving the problem]

[0005] One aspect of the present disclosure is a measurement step of measuring a first resonant frequency of a quartz crystal vibrating element having a quartz crystal blank and an electrode located on the quartz crystal blank and attached to a base by a conductive adhesive; an adjustment step of adjusting the thickness of the electrode based on pre-stored information relating to a correspondence relationship between the obtained first resonance frequency and an adjustment amount of the thickness of the electrode; Including, In the correspondence relationship, a value related to the adjustment amount corresponding to a third resonance frequency before the sealing is performed, in which a predetermined second resonance frequency is obtained by sealing the quartz crystal vibrating element inside the base, is specified; In the adjusting step, the adjustment amount corresponding to the first resonance frequency is divided into a plurality of adjustment operations to adjust a thickness of the electrode; In the plurality of adjustment operations other than the final one, the adjustment is performed with a fixed adjustment amount; In a final adjustment operation among the plurality of adjustment operations, the adjustment is performed so that a total adjustment amount corresponds to the first resonance frequency. A method for adjusting the frequency of a crystal device. Effect of the Invention

[0006] According to the present disclosure, the resonant frequency can be adjusted more accurately. [Brief description of the drawings]

[0007] [Figure 1] FIG. 2 is a diagram illustrating the functional configuration of a manufacturing apparatus for a crystal device according to the present embodiment. [Diagram 2] FIG. 1 is a diagram illustrating a quartz crystal device. [Diagram 3] 1A to 1C are diagrams illustrating a procedure for manufacturing and adjusting a crystal device. [Figure 4] 11A and 11B are diagrams illustrating the relationship between the thickness of an upper electrode and a resonant frequency. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, an embodiment will be described with reference to the drawings. FIG. 1 is a diagram illustrating the functional configuration of a crystal device manufacturing apparatus 1 according to the present embodiment.

[0009] The manufacturing apparatus 1 (frequency adjustment device) for a quartz crystal device of this embodiment includes a control unit 11, a memory unit 12, a measurement unit 13, an adjustment unit 14 (cutting unit), a bonding unit 15, a display unit 16, and an operation reception unit 17. The measurement unit 13 applies a voltage to the quartz crystal vibration element bonded to a package via an electrode pad or the like on the package to oscillate the quartz crystal vibration element and measure the resonant frequency (oscillation frequency). The adjustment unit 14 adjusts the resonant frequency by adjusting, mainly by cutting, the thickness of the electrodes located on one surface of the quartz crystal vibration element bonded to the package. The bonding unit 15 bonds a lid to the package after the adjustment of the resonant frequency to seal it.

[0010] The control unit 11 has a hardware processor such as a CPU (Central Processing Unit), and performs control operations of the crystal device manufacturing apparatus 1. The control operations include controlling the amount of adjustment of the electrode thickness by the adjustment unit 14, that is, generally, the amount of electrode grinding (grinding time).

[0011] The storage unit 12 is a memory for storing data, and includes a RAM for providing a working memory space for the CPU and storing temporary data, and a non-volatile memory for storing setting data (pre-stored information), programs, etc. The non-volatile memory is, for example, a flash memory, and may include an HDD (Hard Disk Drive). The setting data includes an adjustment amount setting 121.

[0012] Display unit 16 displays information related to the operation and status of crystal device manufacturing apparatus 1 under the control of control unit 11. Display unit 16 may have, for example, a liquid crystal display (LCD) and may be capable of displaying characters, figures, etc. Display unit 16 may also have an LED lamp or the like for reporting a status, particularly an abnormal state.

[0013] The operation reception unit 17 receives an external operation by a user or the like, generates a control signal, and outputs the control signal to the control unit 11. The operation reception unit 17 has, for example, a touch panel positioned so as to overlap with the display screen. In addition to or instead of this, the operation reception unit 17 may also have a push button switch, a slide switch, or the like.

[0014] 2 is a diagram illustrating a crystal device 5 manufactured by the crystal device manufacturing apparatus 1. The crystal device 5 includes a base body 51, a crystal vibrating element 52, a conductive adhesive 53, a cover body 54, a component 55, and the like.

[0015] The base 51 has a box shape with a recess 51a on one surface (upper surface). An electrode pad 511 to which the crystal vibration element 52 is connected is located on the bottom surface of the recess 51a. The electrode pad 511 is electrically connected to an external connection pad (not shown) that passes through the inside of the base 51 and is exposed to the outer surface.

[0016] The quartz crystal vibrating element 52 has a quartz crystal blank 521, a lower electrode 522, an upper electrode 523 (electrode located on the quartz crystal blank), a connection electrode 524, and the like. The lower electrode 522 is located on the lower surface of the quartz crystal blank 521, and the upper electrode 523 is located on the upper surface of the quartz crystal blank 521. In other words, the lower electrode 522 faces the bottom surface of the recess 51a, and cannot be seen from above or its thickness adjusted after bonding to the electrode pad 511 of the quartz crystal vibrating element 52. The quartz crystal blank 521 oscillates when a predetermined voltage is applied between the upper electrode 523 and the lower electrode 522. A pair of connection electrodes 524 are located near one end of the quartz crystal blank 521, and are connected to the upper electrode 523 and the lower electrode 522, respectively. The connection electrodes 524 are bonded to the electrode pad 511 of the base 51 by a conductive adhesive 53, and are electrically connected to the electrode pad 511. The quartz crystal vibration element 52 is fixed above the bottom surface of the recess 51a by a conductive adhesive 53 so as not to come into contact with the bottom surface of the recess 51a during vibration. For this reason, the upper surface of the electrode pad 511 may be located at a predetermined height protruding from the bottom surface of the recess 51a.

[0017] The thickness of the quartz crystal piece 521 is determined according to the resonant frequency to be output and is not particularly limited, but in this case, for example, the nominal frequency is 76.8 MHz, which is in the high frequency band among the quartz crystal vibration elements 52 currently manufactured.

[0018] A lid 54 is joined to the upper end surface of a side wall surface 512 surrounding the recess 51a of the base 51 by a brazing material or the like. A frame-shaped metallized layer (not shown) having substantially the same shape as the side wall surface 512 in a plan view may be located between the side wall surface 512 and the lid 54. The metallized layer may be a conductive layer that is applied and fired, or may be a plating layer or the like. The recess 51a is sealed by the lid 54, blocking the entry and exit of air, dust, and the like from the outside. The base 51 and the lid 54 form a housing that houses the quartz crystal vibrating element 52 inside in the quartz crystal device 5 of this embodiment.

[0019] The component 55 is located on the bottom side of the base 51 (the side opposite to the surface having the recess 51a). The component 55 may be an electronic component such as an IC chip, or a sensor such as a temperature measuring element (such as a thermistor). The component 55 may also be a combination of a plurality of these. These output additional information related to the adjustment of the resonance frequency of the crystal vibration element 52, or perform adjustment according to the additional information, that is, the crystal device 5 may be a crystal oscillator. The position of the component 55 need not be near the center of the bottom surface in a plan view, but may be offset.

[0020] Here, the base 51 is not particularly limited, but may be, for example, a ceramic material, a semiconductor material, a glass material, or a combination of these, and has conductive signal lines (including those related to power supply and grounding) inside or on the surface, etc. The top surface of the conductive electrode pad 511 may be gold-plated, for example. Furthermore, the conductive adhesive 53 may be, for example, a resin-based adhesive (such as an epoxy resin) containing a silver filler. The cover 54 is a flat plate of a metal conductor, for example, a metal containing iron, copper, nickel, chromium, cobalt, molybdenum, or tungsten, or an alloy of these metals.

[0021] Next, a method for manufacturing the crystal device 5 of this embodiment will be described. FIG. 3 is a diagram showing a procedure for manufacturing and adjusting the crystal device 5. As shown in FIG. In the crystal device manufacturing apparatus 1, each crystal vibrating element 52 is inserted into a base 51 and attached to an electrode pad 511 of the base 51 by a conductive adhesive 53 (P1). In this state, the resonant frequency (first resonant frequency) of the crystal device 5 is measured by the measuring unit 13 (P2; measurement step).

[0022] The adjustment amount setting 121 is referred to, and based on the measured resonance frequency, a resonance frequency (third resonance frequency) to be adjusted before the crystal device 5 (crystal vibrating element 52) ​​is sealed with the lid 54 is acquired, and the thickness adjustment amount according to this resonance frequency is determined (P3). The thickness of the upper electrode 523 is adjusted (mainly the surface is scraped) by the adjustment unit 14 by the determined adjustment amount (P4; adjustment step). For example, a laser beam or an ion beam may be used for the thickness adjustment operation.

[0023] The lid 54 is joined to the base 51 by the joining section 15, sealing the crystal vibration element 52 in the recess 51a (inside the base 51) (P5). The resonant frequency of the crystal device 5 is measured again by the measuring section 13, and it is determined whether or not the measured resonant frequency is within the target range (P6). If the resonant frequency is not within the target range, the crystal device 5 may be excluded as a non-conforming product. In addition, in the crystal device manufacturing apparatus 1, any processing may be performed before P1, or any processing may be performed after P6.

[0024] In the manufacturing method of the crystal device 5 of this embodiment, the adjustment amount of the thickness of the upper electrode 523 determined in the process P3 takes into consideration the change in the resonance frequency caused by the sealing process.

[0025] FIG. 4 is a diagram for explaining the relationship between the thickness of the upper electrode 523 and the resonant frequency. As shown in Fig. 4(a), in the crystal device 5 that resonates at a resonance frequency F0(1) different from the target frequency F2 (second resonance frequency) in a state where the crystal vibration element 52 is bonded (mounted) to the base 51, the thickness of the upper electrode 523 is adjusted, typically by grinding, to adjust the resonance frequency. However, when the thickness of the upper electrode 523 is adjusted to be the target frequency F2, as shown by the dashed line, the resonant frequency is further changed to a frequency F3r by the sealing process with the lid 54, and finally deviates from the target frequency F2. The cause of this includes the effect of distortion on vibration caused by the difference in thickness between the upper electrode 523 and the lower electrode 522, which is further changed by heating during sealing.

[0026] In the frequency adjustment method of the crystal device 5 of this embodiment, as shown by the thin solid line in Fig. 4(a), the thickness of the upper electrode 523 is adjusted to change the resonance frequency to an intermediate frequency F1(1) (third resonance frequency) different from the target frequency F2 (second resonance frequency). This intermediate frequency F1(1) is determined so that the resonance frequency becomes the target frequency F2 (second resonance frequency) by sealing the crystal vibrating element 52 in the crystal device 5.

[0027] At this time, the amount of change in the resonant frequency due to the sealing process also depends on the amount by which the thickness of the upper electrode 523 was adjusted before sealing (the difference in thickness between the upper electrode 523 and the lower electrode 522), so the intermediate frequency F1 cannot be determined uniformly. That is, as shown by the thick solid line in Fig. 4(a), if the resonant frequency F0(2) during mounting is different from the above-mentioned resonant frequency F0(1), the intermediate frequency F1(2) (the difference between the resonant frequency F0(2) and the intermediate frequency F1(2)) also becomes different from the intermediate frequency F1(1) (the difference between the resonant frequency F0(1) and the intermediate frequency F1(1)), that is, it depends on the resonant frequency F0.

[0028] The intermediate frequency F1(k) may be experimentally obtained in advance. That is, for a frequency F0(k) determined at an appropriate interval, an intermediate frequency F1(k) before sealing is determined such that the frequency after sealing becomes the target frequency F2. Then, for example, a relationship between the frequency F0(k) and the frequency F1(k) or the frequency change df=F1(k)-F0(k) is specified by regression analysis or the like. The regression equation may be a straight line (linear equation), but may also be expressed as a quadratic or higher order equation.

[0029] Since the adjustment amount dc (removed thickness) of the upper electrode 523 and the frequency change df due to the adjustment operation are roughly proportional, the correspondence relationship between the resonance frequency F0(k) and the adjustment amount dc may be directly specified. Also, instead of the adjustment amount dc itself, the change amount of the adjustment amount ddc=dc-dc0 relative to the reference adjustment amount dc0 may be obtained as a relative value. FIG. 4(b) shows a schematic diagram of the relationship of the adjustment amount dc to the resonance frequency F0(k). Each black dot indicates a measured value, and the solid line indicates a regression line. In practice, the adjustment amount dc may be measured for more conditions (resonance frequency F0(k)).

[0030] The correspondence relationship between the original resonance frequency F0 (first resonance frequency) and the adjustment amount dc, change amount ddc, frequency change df, intermediate frequency F1, etc. (values ​​related to the adjustment amount) of the upper electrode 523 thus obtained is stored and held as an adjustment amount setting 121 (information related to the correspondence relationship) in the storage unit 12. The stored content may be the above-mentioned regression equation, or may be table data indicating values ​​of the adjustment amount dc, etc., corresponding to the resonance frequency F0 at a predetermined interval. In particular, when the correspondence relationship is indicated by a higher-order equation of second degree or higher, a value related to the adjustment amount dc for the resonance frequency F0 measured by linear interpolation may be determined using the table data.

[0031] In the crystal device manufacturing apparatus 1, the adjustment amount may be further determined by the operation time of the adjustment operation. In this case, the adjustment operation time tc(F0) may be stored in the adjustment amount setting 121 as a value related to the adjustment amount, instead of the adjustment amount dc(F0).

[0032] When there are a plurality of types of target frequencies F2, adjustment amount settings 121 may be stored and held separately for each of the different target frequencies F2. In particular, since the higher the target frequency F2, the more noticeable the frequency change during sealing tends to be, the adjustment amount dc is set appropriately according to the target frequency F2. In addition, since the intermediate frequency F1 may change depending on the size of the base 51, adjustment amount settings 121 may be stored and held separately according to the product size, etc. In these cases, the desired target frequency F2, size, etc. are set according to the input operation accepted by the operation acceptance unit 17, and an appropriate adjustment amount setting 121 may be selected and used according to these target frequencies F2 and sizes.

[0033] In an actual adjustment (cutting) operation, the adjustment operation of the set adjustment amount does not need to be performed continuously at once. The adjustment amount dc may be the sum of the adjustment amounts in the adjustment operation divided into multiple times. In this case, the set adjustment amount dc does not need to be divided equally into multiple times, that is, the adjustment amount does not need to be adjusted every time. For example, the adjustment operations are performed by setting a fixed adjustment amount except for the last one, and only in the final adjustment operation, the total adjustment amount of the multiple adjustments becomes the set adjustment amount. The fixed adjustment amount for each time may be constant, or may be different each time, for example, may be gradually decreased.

[0034] As described above, the frequency adjustment method of the quartz crystal device of this embodiment includes a measurement step (P2) of measuring the resonance frequency F0 of the quartz crystal vibrating element 52, which has the quartz crystal blank 521 and the upper electrode 523 located on the quartz crystal blank 521 and is bonded to the base 51 with the conductive adhesive 53, and an adjustment step (P5) of adjusting the thickness of the upper electrode 523 based on the adjustment amount setting 121, which is pre-stored information relating to the correspondence between the obtained resonance frequency F0 and the adjustment amount dc of the thickness of the upper electrode 523. In the above correspondence, a value relating to the adjustment amount dc corresponding to the intermediate frequency F1 before the sealing is performed, at which a predetermined target frequency F2 is obtained by sealing the quartz crystal vibrating element 52 inside the base 51, is specified. In this way, the thickness adjustment amount dc is determined before sealing the crystal device 5, taking into consideration the change in resonance frequency due to the sealing process, so that an appropriate target frequency F2 can be obtained after sealing, and thus it is possible to obtain a crystal device 5 that is stable and close to an accurate resonance frequency. In particular, since the change in resonance frequency due to the sealing process also depends on the adjustment amount of the top electrode 523 before sealing, by determining the intermediate frequency F1 for each of the initial resonance frequencies F0, rather than determining the intermediate frequency F1 uniformly, it is possible to more reliably reduce the variation in resonance frequency.

[0035] In the adjustment step, the adjustment amount dc corresponding to the resonance frequency F0 is obtained by performing the adjustment operation multiple times. That is, by not making the adjustment amount for one time too large, it is possible to easily perform stable frequency adjustment.

[0036] In the adjustment step, the final adjustment operation among the multiple adjustment operations may be adjusted to a total adjustment amount dc corresponding to the resonance frequency F0. In other words, the adjustment operations other than the final adjustment operation among the multiple adjustment operations are processed with a fixed adjustment amount regardless of the total adjustment amount dc, so that each adjustment operation can be more easily controlled.

[0037] The manufacturing apparatus 1 for the quartz crystal device 5 of this embodiment includes a quartz crystal blank 521 and an upper electrode 523 located on the quartz crystal blank 521, and is provided with an adjustment unit 14 that acquires information on a resonance frequency F0 of a quartz crystal vibrating element 52 that is bonded to a base 51 with a conductive adhesive 53, and adjusts the thickness of the upper electrode 523 based on pre-stored information on a correspondence relationship between the resonance frequency F0 and an adjustment amount dc of the thickness of the upper electrode 523. In the above correspondence relationship, a value related to the adjustment amount dc corresponding to the intermediate frequency F1 before the sealing is performed, at which a target frequency F2 is obtained by sealing the quartz crystal vibrating element 52 inside the base 51, is specified. By using this type of crystal device manufacturing apparatus 1, it is possible to obtain a crystal device 5 that resonates at a more stable and accurate resonance frequency.

[0038] Furthermore, the manufacturing apparatus 1 for quartz crystal devices may include a measuring unit 13 that measures the above-mentioned resonance frequency F0. In other words, the manufacturing apparatus 1 for quartz crystal devices may measure the resonance frequency F0 within the apparatus itself, obtain the appropriate thickness adjustment amount dc, and adjust the thickness. This eliminates the need for the manufacturing apparatus 1 for quartz crystal devices to measure the resonance frequency F0 using another measuring device to obtain data on the resonance frequency F0, and also eliminates the need to move the quartz crystal device 5 from the measuring device to adjust its position, making it possible to adjust the quartz crystal device to an appropriate resonance frequency more easily and without hassle.

[0039] Furthermore, the crystal device manufacturing apparatus 1 includes a storage unit 12 that stores an adjustment amount setting 121 as information related to the above correspondence relationship. By previously determining and storing the adjustment amount setting 121 in this manner, it is possible to easily and quickly determine an appropriate adjustment amount dc for the acquired (measured) resonance frequency F0, thereby making it possible to adjust the resonance frequency more accurately.

[0040] The above-described embodiment is merely an example, and various modifications are possible. For example, in the above adjustment process, when the thickness of the upper electrode 523 is adjusted in multiple steps, the adjustment amount for the final adjustment should be determined before the start of the final adjustment operation, and the adjustment amount dc does not need to be set before the start of the first adjustment operation. Note that instead of directly measuring and acquiring the initial resonance frequency F0, it is also possible to indirectly obtain the initial resonance frequency F0 based on the measurement value of the resonance frequency before the final adjustment and the adjustment amount up to that point.

[0041] On the other hand, regardless of the above embodiment, the adjustment amount for each of the multiple adjustments may be determined so that the difference in the total adjustment amount dc is reflected for all of the multiple adjustment amounts. That is, the deviation amount (change amount ddc) from the adjustment amount dc0 that is the reference for the total adjustment amount dc may be distributed to each of the multiple adjustment amounts for adjustment.

[0042] Furthermore, in the above embodiment, the crystal device 5 including the component 55 has been described as an example, but the crystal device 5 may not include the component 55.

[0043] In the above embodiment, the measurement of the resonance frequency, the setting of the adjustment amount dc, and the adjustment operation are performed by the same manufacturing apparatus 1 for the crystal device, but this is not limited to the above. For example, the manufacturing apparatus 1 for the crystal device may transmit the measured resonance frequency to an external server, and perform the adjustment operation upon receiving a return of the set value of the adjustment amount from the external server. The adjustment (cutting) operation and the sealing operation may be performed by different devices. The manufacturing apparatus 1 for the crystal device may be a frequency adjustment device that performs only the processing related to the adjustment operation, and all other manufacturing processes may be performed by other devices. The manufacturing apparatus 1 for the crystal device may also obtain information on the resonance frequency of the crystal vibrating element 52 measured by another measuring device, and adjust the thickness of the upper electrode 523 of the crystal vibrator 52 set in the device itself based on the resonance frequency.

[0044] In addition, the adjustment amount dc is described as being determined based on the initial resonance frequency F0 by selecting a calculation formula or table data according to the target frequency F2 and size, but this is not limited to the above. The calculation formula may be determined by including size and other influences as parameters of the calculation formula, and the adjustment amount dc may be calculated and set.

[0045] Furthermore, as described above, the thickness of the upper electrode 523 is generally adjusted by grinding, but this does not exclude cases where the thickness is increased by vapor deposition of an electrode film or the like.

[0046] In the above embodiment, the crystal device 5 outputs a frequency signal with a nominal frequency of 76.8 MHz, but the present invention is not limited to this. The crystal device 5 may output a frequency signal with a higher frequency (for example, 100 MHz, 250 MHz, 600 MHz, or higher), or may output a frequency signal with a lower frequency.

[0047] The shapes of the base 51 and the recess 51a are not limited to the rectangular parallelepiped shape shown in the figure. For example, some or all of the corners may be rounded in any one or more of a plan view, a front view, or a side view, a polygon other than a rectangle, or a protrusion (convex portion) or a depression (concave portion) may be provided. Contrary to the above embodiment, the base 51 may be a flat plate, and the cover 54 may be a box-like shape having a concave portion on the lower surface side and covering the upper part of the crystal vibration element 52. Such a combination of shapes is also included in the configuration in which the crystal vibration element 52 is sealed inside the base 51. In addition, the specific configurations, structures, materials, processing procedures, processing contents, etc. shown in the above embodiments can be modified as appropriate without departing from the spirit of the present invention. The scope of the present invention includes the scope of the invention described in the claims and its equivalents. [Explanation of symbols]

[0048] 1 Manufacturing equipment 11 Control section 12 Storage section 121 Adjustment amount setting 13. Measurement section 14 Adjustment part 15 Joint 16 Display 17 Operation reception section 5. Crystal Devices 51 Base 511 Electrode Pads 512 Side wall 51a Recess 52 Quartz crystal element 521 Crystal piece 522 Bottom electrode 523 Top electrode 524 Connection electrode 53 Conductive Adhesive 54 Lid 55 parts F0 resonant frequency F1 Intermediate frequency F2 Target frequency dc, dc0 adjustment amount ddc change amount tc adjustment operating time

Claims

1. a measurement step of measuring a first resonant frequency of a quartz crystal vibrating element having a quartz crystal blank and an electrode located on the quartz crystal blank and bonded to a base by a conductive adhesive; an adjustment step of adjusting a thickness of the electrode based on pre-stored information relating to a correspondence relationship between the obtained first resonance frequency and an adjustment amount of the thickness of the electrode; Including, In the correspondence relationship, a value related to the adjustment amount corresponding to a third resonance frequency before the quartz crystal vibrating element is sealed inside the base, where the predetermined second resonance frequency is obtained by the sealing, is specified; In the adjusting step, the adjustment amount corresponding to the first resonance frequency is divided into a plurality of adjustment operations to adjust a thickness of the electrode; In the plurality of adjustment operations other than the final one, the adjustment is performed with a fixed adjustment amount; performing the adjustment so that a total adjustment amount corresponds to the first resonance frequency in a final adjustment operation of the plurality of adjustment operations; A method for adjusting the frequency of a crystal device.

2. an adjustment unit that acquires information on a first resonance frequency of a quartz crystal vibrating element having a quartz crystal blank and an electrode located on the quartz crystal blank and bonded to a base body by a conductive adhesive, and adjusts a thickness of the electrode based on previously stored information relating to a correspondence relationship between the first resonance frequency and an adjustment amount of the thickness of the electrode; In the correspondence relationship, a value related to an adjustment amount corresponding to a third resonance frequency before the sealing is performed, in which a second resonance frequency is obtained by sealing the crystal vibration element inside the base, is specified; the adjustment unit divides the adjustment amount corresponding to the first resonance frequency into a plurality of adjustment operations to adjust the thickness of the electrode; In the plurality of adjustment operations other than the final one, the adjustment is performed with a fixed adjustment amount; performing the adjustment so that a total adjustment amount corresponds to the first resonance frequency in a final adjustment operation of the plurality of adjustment operations; A frequency adjustment device for crystal devices.

3. 3. The frequency adjustment apparatus for a quartz crystal device according to claim 2, further comprising a measurement unit that measures the first resonant frequency.

4. 4. The frequency adjustment apparatus for a quartz crystal device according to claim 2, further comprising a storage unit for storing information relating to the correspondence relationship.

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