Image sensor and image pickup device

Abstract

To provide an imaging element configured to reduce read time for reading a pixel signal to enable high-speed read processing for the pixel signal, thereby improving a frame rate in imaging.SOLUTION: An imaging element 3 includes: a first photoelectric conversion unit 11 and a second photoelectric conversion unit configured to generate electric charges by photoelectric conversion; a first conversion unit 40 comprising a first comparison unit 20 that outputs a first signal based on a result of comparing a signal based on electric charges generated by the first photoelectric conversion unit with a reference signal, and a first storage unit 25 that stores a signal based on the first signal that is output by the first comparison unit; a second conversion unit 40 comprising a second comparison unit 20 that outputs a second signal based on a result of comparing a signal based on electric charges generated by the second photoelectric conversion unit 11 with a reference signal, and a second storage unit 25 that stores a signal based on the second signal that is output from the second comparison unit; and a first connection unit SW2 that connects or disconnects the first comparison unit to / from the second storage unit.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to an image pickup device and an imaging device Regarding. [Background technology]

[0002] Conventionally, imaging elements have been known that have a memory unit that stores digital values ​​corresponding to the amount of light received by a pixel, and a memory unit that temporarily stores the digital values ​​for signal processing and horizontal transfer control (for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2017 / 18215 Summary of the Invention

[0004] According to a first aspect of the invention, an image pickup device includes: of electric Load strange Exchange The 1 light Electric conversion unit A first pixel having and, a second pixel having a second photoelectric conversion unit that converts light into electric charges and that is arranged alongside the first photoelectric conversion unit in the row direction; a first signal line electrically connected to the first pixel; a second signal line electrically connected to the second pixel; a first input terminal electrically connected to the first signal line; and a first output terminal. No. 1 ratio Comparison section, Electrically connected to the first output terminal No. Article 1 Memory and a second comparing section having a second input terminal electrically connected to the second signal line and a second output terminal; No. 2 Memory department and, Equipped with. According to a second aspect of the invention, an imaging device includes the imaging element according to the first aspect. Child Prepare. [Brief description of the drawings]

[0005] [Figure 1] 1 is a diagram illustrating an example of a configuration of an imaging device according to a first embodiment. [Diagram 2] 1 is a block diagram showing an example of the configuration of an imaging element according to a first embodiment. [Diagram 3] 1 is a circuit diagram showing an example of the configuration of a portion of an imaging element according to a first embodiment. [Figure 4]FIG. 2 is a diagram illustrating a readout process of the imaging element according to the first embodiment. [Diagram 5] 3A to 3C are diagrams illustrating an example of a method for adding pixel signals in the image sensor according to the first embodiment. [Figure 6] 6A to 6C are diagrams illustrating another readout process of the image sensor according to the first embodiment. [Figure 7] 6A to 6C are diagrams illustrating another readout process of the image sensor according to the first embodiment. [Figure 8] 6A to 6C are diagrams illustrating another readout process of the image sensor according to the first embodiment. [Figure 9] 6A to 6C are diagrams illustrating another readout process of the image sensor according to the first embodiment. [Figure 10] 4A to 4C are diagrams for comparing readout processes of the image sensor according to the first embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0006] (First embodiment) 1 is a diagram showing an example of the configuration of a camera 1, which is an example of an imaging device according to a first embodiment. Camera 1 includes a photographing optical system (imaging optical system) 2, an image sensor 3, a control unit 4, a memory 5, a display unit 6, and an operation unit 7. The photographing optical system 2 has a plurality of lenses including a focus adjustment lens (focus lens) and an aperture diaphragm, and forms a subject image on the image sensor 3. Note that the photographing optical system 2 may be detachable from the camera 1.

[0007] The imaging element 3 is an imaging element such as a CMOS image sensor or a CCD image sensor. The imaging element 3 receives a light beam that has passed through the photographing optical system 2, and captures an image of a subject formed by the photographing optical system 2. The imaging element 3 has a plurality of pixels, each having a photoelectric conversion unit, arranged two-dimensionally (in row and column directions). The photoelectric conversion element is composed of a photodiode (PD). The imaging element 3 photoelectrically converts the received light to generate a signal, and outputs the generated signal to the control unit 4.

[0008] The memory 5 is a recording medium such as a memory card. Image data, control programs, etc. are recorded in the memory 5. Writing of data to the memory 5 and reading of data from the memory 5 are controlled by the control unit 4. The display unit 6 displays images based on the image data, information related to shooting such as shutter speed and aperture value, and menu screens, etc. The operation unit 7 includes various setting switches such as a release button, a power switch, and switches for switching between various modes, and outputs signals based on the respective operations to the control unit 4.

[0009] The control unit 4 is composed of a processor such as a CPU, FPGA, or ASIC, and memories such as a ROM or RAM, and controls each part of the camera 1 based on a control program. The control unit 4 supplies a signal that controls the image sensor 3 to the image sensor 3, thereby controlling the operation of the image sensor 3. The control unit 4 also performs various image processing on the signal output from the image sensor 3 to generate image data. The control unit 4 is also an image generation unit that generates image data, and generates still image data and moving image data based on the signal output from the image sensor 3. The image processing includes image processing such as tone conversion processing and color interpolation processing.

[0010] The control unit 4 performs a process of individually reading out signals from all pixels of the image sensor 3, and a process of mixing (adding) and reading out signals from multiple pixels. The control unit 4 controls the image sensor 3 to select (set) a method of reading out pixel signals. For example, when displaying a through image (live view image) of a subject on the display unit 6, or when shooting a video, the control unit 4 performs a process of mixing and reading out signals from multiple pixels. The control unit 4 also performs a process of individually reading out signals from all pixels when shooting a high-resolution still image.

[0011] 2 is a block diagram showing an example of the configuration of an image sensor according to the first embodiment. The image sensor 3 is configured by laminating a first substrate 111 on which a plurality of pixels 10 are formed, and a second substrate 112 on which a plurality of analog / digital conversion sections (AD conversion sections) 40 are formed. The first substrate 111 and the second substrate 112 are each configured using a semiconductor substrate. The circuit provided on the first substrate 111 and the circuit provided on the second substrate 112 are electrically connected by bumps, electrodes, etc.

[0012] The first substrate 111 has a plurality of pixels 10 arranged two-dimensionally. The pixels 10 output a photoelectric conversion signal and a dark signal, which will be described later, to the second substrate 112. In Fig. 2, the pixel 10 in the upper left corner is pixel 10(1,1) in the first row and first column, and the pixel 10 in the lower right corner is pixel 10(4,4) in the fourth row and fourth column, so that 16 pixels 10 are illustrated, 4 pixels in the row direction x 4 pixels in the column direction. Note that the number and arrangement of pixels arranged in the imaging element are not limited to the example shown in the figure.

[0013] The second substrate 112 has a plurality of AD conversion units 40. In the present embodiment, an AD conversion unit 40 is provided for each pixel 10. In Fig. 2, 16 AD conversion units 40 are illustrated, from AD conversion unit 40(1,1) to AD conversion unit 40(4,4). As will be described later, the AD conversion units 40 include a comparison unit and a storage unit, and convert the input photoelectric conversion signal and dark signal into digital signals each having a predetermined number of bits.

[0014] 3 is a circuit diagram showing an example of the configuration of a portion of the image sensor according to the first embodiment. The image sensor 3 has a plurality of pixels 10, a plurality of AD conversion units 40, a read control unit 60, a signal processing unit 70, and an input / output unit 80.

[0015] The pixel 10 has a photoelectric conversion unit 11, a transfer unit 12, a reset unit 13, a floating diffusion (FD) 14, an amplifier unit 15, and a current source 16. The photoelectric conversion unit 11 is a photodiode PD, which converts incident light into electric charges and accumulates the photoelectrically converted electric charges. The transfer unit 12 is composed of a transistor M1 controlled by a signal TX, and transfers the electric charges photoelectrically converted by the photoelectric conversion unit 11 to the FD 14. The transistor M1 is a transfer transistor. The FD 14 accumulates (holds) the electric charges transferred to the FD 14. The current source 16 generates a current for reading out a signal from the pixel 10, and supplies the generated current to a signal line 18 and the amplifier unit 15.

[0016] The amplifier unit 15 is composed of a transistor M3 whose gate (terminal) is connected to the FD 14, amplifies a signal due to the charge accumulated in the FD 14, and outputs it to a signal line 18. The transistor M3 is an amplifying transistor. The reset unit 13 is composed of a transistor M2 controlled by a signal RST, and discharges the charge accumulated in the FD 14 and resets the voltage of the FD 14. The transistor M2 is a reset transistor.

[0017] The pixel 10 sequentially outputs to the signal line 18 a signal (dark signal) when the voltage of the FD 14 is reset, and a signal (photoelectric conversion signal) corresponding to the charge transferred from the photoelectric conversion unit 11 to the FD 14 by the transfer unit 12. The dark signal is an analog signal indicating a reference level for the photoelectric conversion signal. The photoelectric conversion signal is an analog signal generated based on the charge photoelectrically converted by the photoelectric conversion unit 11. The dark signal and photoelectric conversion signal sequentially output from the pixel 10 are input to the AD conversion unit 40 via the signal line 18 and bumps, etc.

[0018] The AD conversion unit 40 has a comparison unit 20, a switch SW1, a storage unit 25, and a selection unit 30. The comparison unit 20 includes a comparator circuit. A ramp signal ramp, which is a reference signal that changes over time, is input to a first terminal 21 of the comparison unit 20 from a signal generation circuit (not shown). A signal (photoelectric conversion signal, dark signal) output from the pixel 10 to the signal line 18 is input to a second terminal 22 of the comparison unit 20, either directly or after being amplified by an amplifier circuit (not shown). The comparison unit 20 compares the signal input from the pixel 10 with the reference signal, and outputs an output signal, which is the comparison result, from an output terminal 23.

[0019] The comparing unit 20 is connected to the storage unit 25 via a switch SW1. The switch SW1 is configured of a transistor, and electrically connects or disconnects the comparing unit 20 and the storage unit 25. When the switch SW1 is in an on state, it outputs an output signal of the comparing unit 20 to the storage unit 25.

[0020] The storage unit 25 is composed of a number of latch circuits corresponding to the number of bits of the digital signal to be stored. An output signal indicating the comparison result by the comparison unit 20 is input to one input terminal (G terminal) of each latch circuit via a switch SW1. A clock signal indicating a count value is input to the other input terminal (D terminal) of each latch circuit from a counter circuit (not shown). In the example shown in FIG. 3, a clock signal indicating a count value is input to the other input terminal (D terminal) of each latch circuit. <0> ~cnt <n>is input, and the AD conversion unit 40 becomes an n-bit AD conversion circuit.

[0021] The storage unit 25 stores, as a digital signal, a count value corresponding to the elapsed time from the start of comparison by the comparison unit 20 to the inversion of the comparison result, based on the output signal of the comparison unit 20 and the clock signal from the counter circuit. In other words, the storage unit 25 stores, as a digital signal, a count value corresponding to the time until the magnitude relationship between the level of the signal output from the pixel 10 and the level of the reference signal changes (is inverted), based on the signal output from the comparison unit 20.

[0022] When the dark signal of the pixel 10 is input to the comparison unit 20, the comparison unit 20 compares the dark signal with the reference signal and outputs the comparison result to the storage unit 25. The storage unit 25 stores a count value corresponding to the elapsed time from the start of comparison by the comparison unit 20 to the inversion of the comparison result as a digital signal based on the dark signal, based on the comparison result by the comparison unit 20 and the clock signal. Also, when the photoelectric conversion signal of the pixel 10 is input to the comparison unit 20, the comparison unit 20 compares the photoelectric conversion signal with the reference signal and outputs the comparison result to the storage unit 25. The storage unit 25 stores a count value corresponding to the elapsed time from the start of comparison by the comparison unit 20 to the inversion of the comparison result as a digital signal based on the photoelectric conversion signal, based on the comparison result by the comparison unit 20 and the clock signal. In this way, the AD conversion unit 40 converts the photoelectric conversion signal, which is an analog signal, into a digital signal with a predetermined number of bits, and converts the dark signal, which is an analog signal, into a digital signal with a predetermined number of bits.

[0023] The selection unit 30 is configured with a multiplexer controlled by a signal SEL, and receives pixel signals converted into digital signals (n-bit digital signals in FIG. 3) from the storage unit 25. The selection unit 30 outputs the pixel signals input from the storage unit 25 to signal lines 50 (hereinafter referred to as data lines). The data lines 50 are configured with a number of signal lines corresponding to the number of bits of the digital signal output from the AD conversion unit 40. In the image sensor 3, a data line 50 (n signal lines in FIG. 3) is provided for each column of a number of AD conversion units 40 aligned in the vertical direction, i.e., the column direction (vertical direction).

[0024] The signal processing unit 70 includes an amplifier circuit, a decoder circuit, and the like. Digital pixel signals (digital signals based on dark signals and digital signals based on photoelectric conversion signals) are input to the signal processing unit 70 via the data line 50. The processing unit 70 performs signal processing such as correlated double sampling and code conversion processing on the signals input from the AD conversion unit 40 via the data line 50, and outputs the signals to the input / output unit 80. The input / output unit 80 has an input / output circuit compatible with high-speed interfaces such as SLVS and LVDS. The input / output unit 80 outputs (transmits) the signals input from the signal processing unit 70 to the control unit 4 of the camera 1 at high speed.

[0025] The read control unit 60 is provided in common to the multiple pixels 10 and the multiple AD conversion units 40. The read control unit 60 is composed of multiple circuits including a timing generator, and is separately arranged on the first substrate 111 and the second substrate 112. The read control unit 60 may be arranged on either the first substrate 111 or the second substrate 112, or may be arranged on a substrate different from the first substrate 112 and the second substrate 112.

[0026] The readout control unit 60 is controlled by the control unit 4 of the camera 1, and supplies signals such as the above-mentioned signal TX and signal RST to each pixel 10 to control the operation of each pixel 10. The readout control unit 60 supplies signals to the gates of each transistor in the pixels 10 to turn the transistor on (connected state, conductive state, short-circuited state) or off (disconnected state, non-conductive state, open state, blocked state).

[0027] The read control unit 60 supplies the above-mentioned signal SEL to the selection unit 30 of each AD conversion unit 40 to control the selection unit 30 of each AD conversion unit 40. When the selection unit 30 is enabled (on) by the read control unit 60, it outputs the pixel signal converted into a digital signal input from the storage unit 25 to the signal processing unit 70 via the data line 50. The read control unit 60 sequentially turns on the selection unit 30 of each AD conversion unit 40, and outputs the pixel signal stored in the storage unit 25 connected to the selection unit 30 that is turned on to the data line 50. It can also be said that the read control unit 60 sequentially selects a plurality of AD conversion units 40 and reads out the pixel signal converted into a digital signal from the selected AD conversion unit 40. The n-bit pixel signal converted into a digital signal is input to the signal processing unit 70 for each data line 50.

[0028] 4 is a diagram illustrating a readout process of the image sensor according to the first embodiment. The image sensor 3 is provided with switches SW2 (switches SW2a to SW2h in FIG. 4) that connect or disconnect the comparison unit 20 of an AD conversion unit 40 and the storage unit 25 of an AD conversion unit 40 different from that AD conversion unit 40. In this embodiment, the switch SW2 connects the output terminal 23 of the comparison unit 20 of one AD conversion unit 40 to the input terminal (G terminal) of the storage unit 25 of the other AD conversion unit 40 out of two AD conversion units 40 adjacent to each other in the row direction.

[0029] In the example shown in FIG. 4, a switch SW2 is provided between each comparison unit 20 of the AD conversion units 40 in the odd-numbered columns and each storage unit 25 of the AD conversion units 40 in the even-numbered columns. The switch SW2 is configured by a transistor. For example, the switch SW2a is a connection unit 2a, and connects the comparison unit 20 of the AD conversion unit 40(1,1) and the storage unit 25 of the AD conversion unit 40(1,2) among the AD conversion units 40 in the first row. The switch SW2e is a connection unit 2e, and connects the comparison unit 20 of the AD conversion unit 40(3,1) and the storage unit 25 of the AD conversion unit 40(3,2) among the AD conversion units 40 in the third row. The read control unit 60 (see FIG. 3) supplies a signal to each of the switches SW2a to SW2h to control the on / off of each switch.

[0030] The read control unit 60 performs a process of individually reading out the signal of each pixel of the image sensor 3 (individual read processing) and a process of adding and reading out the signals of a plurality of pixels (addition read processing). In the individual read processing, the read control unit 60 sequentially selects the AD conversion units 40 of the image sensor 3 row by row, from the first row to the fourth row in FIG. 4, and reads out the pixel signal from the selected AD conversion unit 40.

[0031] In the addition readout process, the readout control unit 60 adds up the signals of the multiple pixels by controlling the multiple switches SW as shown in Fig. 5(a) to connect the FDs 14 of the multiple pixels 10 to each other. The readout control unit 60 may add up the signals of the multiple pixels by controlling the multiple switches SW as shown in Fig. 5(b) to connect the amplifiers 15 of the multiple pixels 10 to the same signal line 18. The readout control unit 60 selects, one row or multiple rows at a time, some of the multiple AD conversion units 40 of the image sensor 3 (hereinafter referred to as first AD conversion units) to which a signal generated by adding up the signals of the multiple pixels is input, and performs a process of reading out the pixel signals.

[0032] In this embodiment, the addition readout process has a first readout method, a second readout method, and a third readout method. The first readout method is a method in which the first AD conversion units 40 are sequentially selected row by row, and pixel signals converted into digital signals are read out. The first AD conversion units 40 are AD conversion units 40 selected by thinning out the AD conversion units 40 in specific rows or columns from all the AD conversion units 40. The first AD conversion units 40 receive the added pixel signals and convert the added pixel signals into digital signals.

[0033] The second readout method is a method in which the first AD conversion unit 40 is selected in sequence for each set of multiple rows, and pixel signals converted into digital signals are read out. The third readout method is a method in which AD conversion of pixel signals (e.g., photoelectric conversion signals) and reading of pixel signals converted into digital signals (e.g., digital signals based on dark signals) are performed simultaneously (in parallel). The control unit 4 of the camera 1 controls the readout control unit 60 to switch the pixel signal readout method.

[0034] (Individual reading process) In the individual readout process, the readout control unit 60 turns on the switches SW1 of the multiple AD conversion units 40 of the image sensor 3, and causes each AD conversion unit 40 to perform AD conversion. The readout control unit 60 sequentially selects the multiple AD conversion units 40 row by row, and sequentially causes the selected AD conversion units 40 to output pixel signals converted into digital signals to the data lines 50.

[0035] (First read method of additive read processing) In the first readout method, the readout control unit 60 turns on the switches SW1 of the first AD conversion units 40, and causes each of the first AD conversion units 40 to perform AD conversion. The readout control unit 60 sequentially selects the first AD conversion units 40 row by row, and causes the selected first AD conversion units 40 to output pixel signals converted into digital signals to the data lines 50. In this way, in the first readout method, the readout control unit 60 uses only the first AD conversion units 40 out of all the AD conversion units 40. In the first readout method, other AD conversion units 40 (hereinafter referred to as second AD conversion units) different from the first AD conversion unit 40 and the data lines 50 to which the second AD conversion units 40 are connected are not used and are in a suspended state.

[0036] (Second read method of additive read processing) In the second readout method, the readout control unit 60 controls the switches SW1 and SW2 to use the memory unit 25 and the selection unit 30 of the second AD conversion unit 40 and the data line 50 connected to the second AD conversion unit 40 in addition to the first AD conversion unit 40. In the second readout method, by using the data lines 50 provided for different columns, it becomes possible to simultaneously read out pixel signals converted into digital signals from the AD conversion units 40 of multiple rows. The image sensor 3 can read out pixel signals in a shorter time than when the first AD conversion units 40 are selected row by row and pixel signals are sequentially read out to the data line 50.

[0037] (Third readout method of additive readout processing) In the third readout method, the readout control unit 60 also uses the storage unit 25 and selection unit 30 of the second AD conversion unit 40, and a data line 50 connected to the second AD conversion unit 40, in addition to the first AD conversion unit 40. The readout control unit 60 controls the switches SW1 and SW2 to control whether the output signal of the comparison unit 20 of the first AD conversion unit 40 is output to the storage unit 25 of the first AD conversion unit 40 or the storage unit 25 of the second AD conversion unit 40. It can be said that the readout control unit 60 switches the storage unit 25 that is the output destination of the comparison result by the comparison unit 20 of the first AD conversion unit 40.

[0038] In the third readout method, the readout control unit 60 switches the connection destination of the comparison unit 20 of the first AD conversion unit 40 between the storage unit 25 of the first AD conversion unit 40 or the storage unit 25 of the second AD conversion unit 40 depending on whether a dark signal is input to the comparison unit 20 of the first AD conversion unit 40 or a photoelectric conversion signal is input to the comparison unit 20 of the first AD conversion unit 40. For example, when a dark signal is input to the comparison unit 20 of the first AD conversion unit 40, the readout control unit 60 connects the comparison unit 20 of the first AD conversion unit 40 to the storage unit 25 of the first AD conversion unit 40. The comparison unit 20 of the first AD conversion unit 40 outputs an output signal indicating a comparison result between the dark signal and the reference signal to the storage unit 25 of the first AD conversion unit 40 via the switch SW1. The storage unit 25 of the first AD conversion unit 40 stores a digital signal based on the dark signal based on the output signal of the comparison unit 20.

[0039] After AD conversion of the dark signal is completed, the read control unit 60 starts reading out the digital signal based on the dark signal from the storage unit 25 of the first AD conversion unit 40 to the data line 50. The read control unit 60 also connects the comparison unit 20 of the first AD conversion unit 40 to the storage unit 25 of the second AD conversion unit 40. At this time, when a photoelectric conversion signal is input to the comparison unit 20 of the first AD conversion unit 40, the comparison unit 20 of the first AD conversion unit 40 outputs an output signal indicating a comparison result between the photoelectric conversion signal and a reference signal to the storage unit 25 of the second AD conversion unit 40 via the switch SW2. The storage unit 25 of the second AD conversion unit 40 stores the digital signal based on the photoelectric conversion signal based on the output signal of the comparison unit 20 of the first AD conversion unit 40.

[0040] In this way, in the third readout method, AD conversion is performed using different storage units 25 when performing AD conversion of a dark signal and when performing AD conversion of a photoelectric conversion signal. This allows reading of a digital signal based on a dark signal and AD conversion of a photoelectric conversion signal to be performed in parallel. Similarly, reading of a digital signal based on a photoelectric conversion signal and AD conversion of a dark signal to be performed in parallel. Therefore, the image sensor 3 does not need to wait for completion of a process of reading pixel signals to the data line 50 before starting the next AD conversion process, and can read pixel signals in a short time. Below, the first to third readout methods of the individual readout process and the additive readout process will be further described with reference to Figs. 4 to 10.

[0041] (Individual reading process) When the control unit 4 instructs individual read processing, the read control unit 60 turns on each switch SW1 of the AD conversion units 40(1,1) to 40(4,4) and turns off each switch SW2a to SW2h, as shown in FIG. 4.

[0042] The read control unit 60 turns on the reset units 13 of the pixels 10(1,1) to 10(4,4). This resets the voltage of the FD 14 in each pixel 10. The dark signals of the pixels 10(1,1) to 10(4,4) are output to the AD conversion units 40(1,1) to 40(4,4) via the signal lines 18 connected to the pixels 10. The AD conversion units 40(1,1) to 40(4,4) convert the input dark signals into digital signals. The storage units 25 of the AD conversion units 40(1,1) to 40(4,4) store digital signals based on the dark signals of the pixels 10(1,1) to 10(4,4).

[0043] The read control unit 60 turns on the selection units 30 of the AD conversion units 40(1,1) to 40(1,4) in the first row of AD conversion units 40, and turns off the selection units 30 of the AD conversion units 40 in rows other than the first row. As a result, digital signals based on the dark signals of the AD conversion units 40(1,1) to 40(1,4) are output to the data lines 50a to 50d, respectively, via the selection units 30 of the AD conversion units 40.

[0044] After reading out the digital signals based on the dark signals from each AD conversion unit 40 in the first row, the read control unit 60 turns on the selection units 30 of the AD conversion units 40(2,1) to 40(2,4) in the second row, and turns off the selection units 30 of the AD conversion units 40 in rows other than the second row. As a result, the digital signals based on the dark signals of each of the AD conversion units 40(2,1) to 40(2,4) are output to the data lines 50a to 50d via the selection units 30 of each AD conversion unit 40. Similarly, the read control unit 60 sequentially selects the AD conversion units 40 in the third row and thereafter, row by row, in the order of the third row, the fourth row, and the fifth row, and reads out the digital signals based on the dark signals from each selected AD conversion unit 40.

[0045] The readout control unit 60 turns on the transfer units 12 of the pixels 10(1,1) to 10(4,4). As a result, in each pixel 10, the charge photoelectrically converted by the PD 11 is transferred to the FD 14. The photoelectric conversion signals of the pixels 10(1,1) to 10(4,4) are output to the AD conversion units 40(1,1) to 40(4,4) via the signal lines 18 connected to each pixel 10. The AD conversion units 40(1,1) to 40(4,4) convert the input photoelectric conversion signals into digital signals. The storage units 25 of the AD conversion units 40(1,1) to 40(4,4) store digital signals based on the photoelectric conversion signals of the pixels 10(1,1) to 10(4,4).

[0046] The read control unit 60 sequentially selects one row at a time, in the order of the first row, the second row, the third row, the fourth row, and the fifth row, in the same manner as when reading out digital signals based on dark signals from each AD conversion unit 40, and reads out digital signals based on photoelectric conversion signals from each selected AD conversion unit 40.

[0047] Thus, in the individual readout process, the readout control unit 60 individually reads out signals of pixels of the imaging element 3. Digital signals based on dark signals and digital signals based on photoelectric conversion signals sequentially output to the data lines 50a to 50d are subjected to signal processing such as correlated double sampling by a signal processing unit 70 (see FIG. 3), and then output to the control unit 4 via the input / output unit 80.

[0048] (First to third read methods of additive read processing) In the first to third readout methods of the addition readout process, the readout control unit 60 adds up the signals of a plurality of pixels for each of the plurality of pixels. In the following, an example will be described in which the signals of four pixels (2 pixels x 2 pixels) are added up for each of the four pixels. A signal obtained by adding up the signals of the pixels 10(1,1), 10(1,2), 10(2,1), and 10(2,2) is input to the AD conversion unit 40(1,1). A signal obtained by adding up the signals of the pixels 10(1,3), 10(1,4), 10(2,3), and 10(2,4) is input to the AD conversion unit 40(1,3). In addition, a signal obtained by adding together the signals from pixels 10(3,1), 10(3,2), 10(4,1), and 10(4,2) is input to an AD conversion unit 40(3,1), and a signal obtained by adding together the signals from pixels 10(3,3), 10(3,4), 10(4,3), and 10(4,4) is input to an AD conversion unit 40(3,3).

[0049] The AD conversion units 40(1,1), 40(1,3), 40(3,1), and 40(3,3) function as the first AD conversion unit described above. In Fig. 6, these AD conversion units 40 surrounded by thick lines are examples of AD conversion units used in the case of the first readout method. The AD conversion unit 40 surrounded by thick lines in Fig. 7 is an example of an AD conversion unit used in the case of the second readout method, and the AD conversion unit 40 surrounded by thick lines in Figs. 8 and 9 is an example of an AD conversion unit used in the case of the third readout method.

[0050] (First read method of additive read processing) When the control unit 4 instructs the read control unit 60 to use the first read method, the read control unit 60 turns on the switch SW1 of each of the AD conversion units 40(1,1), 40(1,3), 40(3,1), and 40(3,3), and turns off the switches SW2a to SW2h. When the added dark signal is input, the AD conversion units 40(1,1), 40(1,3), 40(3,1), and 40(3,3) convert the dark signal into a digital signal. The storage units 25 of the AD conversion units 40(1,1), 40(1,3), 40(3,1), and 40(3,3) store digital signals based on the added dark signals.

[0051] The read control unit 60 turns on the selection units 30 of the AD conversion unit 40(1,1) and AD conversion unit 40(1,3) in the first row, and turns off the selection units 30 of the AD conversion units 40 other than the AD conversion unit 40(1,1) and AD conversion unit 40(1,3). As a result, a digital signal based on the summed dark signal of the AD conversion unit 40(1,1) is output to the data line 50a via the selection unit 30 of the AD conversion unit 40(1,1). Also, a digital signal based on the summed dark signal of the AD conversion unit 40(1,3) is output to the data line 50c via the selection unit 30 of the AD conversion unit 40(1,3).

[0052] After reading out the digital signals based on the dark signals from the AD conversion unit 40(1,1) and the AD conversion unit 40(1,3) in the first row, the read control unit 60 turns on the selection units 30 of the AD conversion unit 40(3,1) and the AD conversion unit 40(3,3) in the third row. The read control unit 60 also turns off the selection units 30 of the AD conversion units 40 other than the AD conversion unit 40(3,1) and the AD conversion unit 40(3,3). As a result, the digital signal based on the added dark signals of the AD conversion unit 40(3,1) is output to the data line 50a via the selection unit 30 of the AD conversion unit 40(3,1). The digital signal based on the added dark signals of the AD conversion unit 40(3,3) is output to the data line 50c via the selection unit 30 of the AD conversion unit 40(3,3). Thereafter, in the same manner, the read control unit 60 sequentially selects the AD conversion units 40 in every other row, and reads out digital signals based on dark signals from each selected AD conversion unit 40.

[0053] When the added photoelectric conversion signal is input, the AD conversion unit 40(1,1), the AD conversion unit 40(1,3), the AD conversion unit 40(3,1), and the AD conversion unit 40(3,3) convert the photoelectric conversion signal into a digital signal. A digital signal based on the added photoelectric conversion signal is stored in the memory unit 25 of each of the AD conversion units 40(1,1), the AD conversion unit 40(1,3), the AD conversion unit 40(3,1), and the AD conversion unit 40(3,3). The read control unit 60 sequentially selects the AD conversion units 40 every other row in the same manner as when reading out a digital signal based on a dark signal from each AD conversion unit 40, and reads out a digital signal based on a photoelectric conversion signal from each selected AD conversion unit 40.

[0054] In this way, in the first readout method, the readout control unit 60 sequentially selects some of all the AD conversion units 40 of the image sensor 3, row by row, and reads out the digitalized pixel signals. The digital signals based on the dark signals and the digital signals based on the photoelectric conversion signals sequentially output to the data lines 50a, 50c are subjected to signal processing by the signal processing unit 70, and then output to the control unit 4 by the input / output unit 80.

[0055] (Second read method of additive read processing) When the control unit 4 instructs the second readout method, the readout control unit 60 turns on the switches SW1 of the AD conversion unit 40(1,1) and the AD conversion unit 40(1,3) as shown in FIG. 7. The readout control unit 60 also turns on the switches SW2e and SW2f. When the switch SW2e is turned on, the comparison unit 20 of the AD conversion unit 40(3,1) and the storage unit 25 of the AD conversion unit 40(3,2) are electrically connected. When the switch SW2f is turned on, the comparison unit 20 of the AD conversion unit 40(3,3) and the storage unit 25 of the AD conversion unit 40(3,4) are electrically connected. The AD conversion unit 40(3,2) and the AD conversion unit 40(3,4) function as the second AD conversion unit described above.

[0056] When the added dark signal is input, the AD conversion unit 40(1,1) and the AD conversion unit 40(1,3) convert the dark signal into a digital signal. The storage unit 25 of each of the AD conversion units 40(1,1) and 40(1,3) stores a digital signal based on the added dark signal.

[0057] When the added dark signal is input to the comparison unit 20 of the AD conversion unit 40(3,1), the comparison unit 20 outputs an output signal indicating a comparison result between the dark signal and a reference signal to the storage unit 25 of the AD conversion unit 40(3,2) via the switch SW2e. The storage unit 25 of the AD conversion unit 40(3,2) stores a digital signal based on the added dark signal based on the output signal of the comparison unit 20 of the AD conversion unit 40(3,1). In this manner, the added dark signal input to the comparison unit 20 of the AD conversion unit 40(3,1) is converted into a digital signal by the comparison unit 20 of the AD conversion unit 40(3,1) and the storage unit 25 of the AD conversion unit 40(3,2).

[0058] When the added dark signal is input to the comparison unit 20 of the AD conversion unit 40(3,3), the comparison unit 20 outputs an output signal indicating a comparison result between the dark signal and a reference signal to the storage unit 25 of the AD conversion unit 40(3,4) via the switch SW2f. The storage unit 25 of the AD conversion unit 40(3,4) stores a digital signal based on the added dark signal based on the output signal of the comparison unit 20 of the AD conversion unit 40(3,3). In this way, the added dark signal input to the comparison unit 20 of the AD conversion unit 40(3,3) is converted into a digital signal by the comparison unit 20 of the AD conversion unit 40(3,3) and the storage unit 25 of the AD conversion unit 40(3,4).

[0059] The read control unit 60 turns on the selection units 30 of the AD conversion units 40(1,1) and 40(1,3) in the first row and the selection units 30 of the AD conversion units 40(3,2) and 40(3,4) in the third row. The read control unit 60 also turns off the selection units 30 of the AD conversion units 40 other than the AD conversion unit 40(1,1), AD conversion unit 40(1,3), AD conversion unit 40(3,2), and AD conversion unit 40(3,4).

[0060] The added dark signal input to the comparison unit 20 of the AD conversion unit 40(1,1) is converted into a digital signal by the AD conversion unit 40(1,1) as shown typically by an arrow 90a, and then output to the data line 50a via the selection unit 30 of the AD conversion unit 40(1,1). Also, the added dark signal input to the comparison unit 20 of the AD conversion unit 40(3,1) is converted into a digital signal by the comparison unit 20 of the AD conversion unit 40(3,1) and the storage unit 25 of the AD conversion unit 40(3,2), as shown typically by an arrow 90b, and then output to the data line 50b via the selection unit 30 of the AD conversion unit 40(3,2).

[0061] The added dark signal input to the comparison unit 20 of the AD conversion unit 40(1,3) is converted into a digital signal by the AD conversion unit 40(1,3) as shown by an arrow 90c, and then output to the data line 50c via the selection unit 30 of the AD conversion unit 40(1,3). The added dark signal input to the comparison unit 20 of the AD conversion unit 40(3,3) is converted into a digital signal by the comparison unit 20 of the AD conversion unit 40(3,3) and the storage unit 25 of the AD conversion unit 40(3,4) as shown by an arrow 90d, and then output to the data line 50d via the selection unit 30 of the AD conversion unit 40(3,4). Thereafter, in the same manner, the read control unit 60 sequentially selects the AD conversion units 40 two rows at a time, and reads out digital signals based on the dark signals from each selected AD conversion unit 40.

[0062] When the added photoelectric conversion signal is input, the AD conversion unit 40(1,1) and the AD conversion unit 40(1,3) convert the photoelectric conversion signal into a digital signal. The memory units 25 of the AD conversion units 40(1,1) and the AD conversion units 40(1,3) each store a digital signal based on the added photoelectric conversion signal. The added photoelectric conversion signal input to the comparison unit 20 of the AD conversion unit 40(3,1) is converted into a digital signal by the comparison unit 20 of the AD conversion unit 40(3,1) and the memory unit 25 of the AD conversion unit 40(3,2) and stored in the memory unit 25 of the AD conversion unit 40(3,2). In addition, the added photoelectric conversion signal input to the comparison unit 20 of the AD conversion unit 40(3,3) is converted into a digital signal by the comparison unit 20 of the AD conversion unit 40(3,3) and the memory unit 25 of the AD conversion unit 40(3,4) and is stored in the memory unit 25 of the AD conversion unit 40(3,4).

[0063] The read control unit 60 sequentially selects the AD conversion units 40 two rows at a time, in the same manner as when reading out digital signals based on dark signals from each AD conversion unit 40, and reads out digital signals based on photoelectric conversion signals from each selected AD conversion unit 40.

[0064] In this way, in the second readout method, the readout control unit 60 controls the switches SW1 and SW2 to use the AD conversion unit 40, which is in a pause state in the first readout method, and the data lines 50b and 50d connected to the AD conversion unit 40. Therefore, the readout control unit 60 can sequentially select the AD conversion units 40 two rows at a time and read out the pixel signals converted into digital signals. This allows the pixel signals to be read out in a shorter time than when the AD conversion units 40 are sequentially selected one row at a time to read out the pixel signals. The digital signals based on the dark signals and the digital signals based on the photoelectric conversion signals, which are sequentially output to the data lines 50a to 50d, are subjected to signal processing by the signal processing unit 70 and then output to the control unit 4 by the input / output unit 80.

[0065] (Third readout method of additive readout processing) 8 and 9 are diagrams for explaining the readout process of the image sensor when the third readout method is instructed by the control unit 4. FIG. 8 shows the connection state of the switches SW1 and SW2 when the added dark signal is input to the comparison unit 20 of the AD conversion unit 40. FIG. 9 shows the connection state of the switches SW1 and SW2 when the added photoelectric conversion signal is input to the comparison unit 20 of the AD conversion unit 40. In the example shown in FIG. 8 and FIG. 9, the AD conversion unit 40(1,2), the AD conversion unit 40(1,4), the AD conversion unit 40(3,2), and the AD conversion unit 40(3,4) function as the above-mentioned second AD conversion unit.

[0066] When the added dark signal is input to the comparator 20 of the AD converter 40, the read controller 60 turns on the switches SW1 of the AD converters 40(1,1), 40(1,3), 40(3,1), and 40(3,3) as shown in Fig. 8. The read controller 60 also turns off the switches SW2a to SW2h.

[0067] The read control unit 60 causes each of the AD conversion units 40(1,1), 40(1,3), 40(3,1), and 40(3,3) to perform AD conversion of the added dark signal. For example, the added dark signal input to the comparison unit 20 of the AD conversion unit 40(1,1) is converted to a digital signal by the AD conversion unit 40(1,1) as shown by an arrow 91a, and stored in the storage unit 25 of the AD conversion unit 40(1,1). In addition, the added dark signal input to the comparison unit 20 of the AD conversion unit 40(1,3) is converted to a digital signal by the AD conversion unit 40(1,3) as shown by an arrow 91c, and stored in the storage unit 25 of the AD conversion unit 40(1,3).

[0068] Simultaneously with the AD conversion of the dark signal, the read control unit 60 reads out digital signals based on the photoelectric conversion signals stored at the time of the previous AD conversion of the photoelectric conversion signals from the storage units 25 of the AD conversion units 40(1,2), 40(1,4), 40(3,2), and 40(3,4). For example, as shown by an arrow 92b, a digital signal based on the added photoelectric conversion signals is output to the data line 50b from the storage unit 25 of the AD conversion unit 40(1,2). Also, as shown by an arrow 92d, a digital signal based on the added photoelectric conversion signals is output to the data line 50d from the storage unit 25 of the AD conversion unit 40(1,4). Thereafter, in the same manner, the read control unit 60 sequentially selects the AD conversion units 40 in every other row and reads out digital signals based on the photoelectric conversion signals from each selected AD conversion unit 40.

[0069] When the added photoelectric conversion signal is input to the comparison unit 20 of the AD conversion unit 40, the read control unit 60 turns off the switches SW1 of the AD conversion units 40(1,1), 40(1,3), 40(3,1), and 40(3,3) as shown in Fig. 9. In addition, the read control unit 60 turns on the switches SW2a, SW2b, SW2e, and SW2f.

[0070] The read control unit 60 causes the comparison unit 20 of the AD conversion unit 40(1,1) and the storage unit 25 of the AD conversion unit 40(1,2), the comparison unit 20 of the AD conversion unit 40(1,3) and the storage unit 25 of the AD conversion unit 40(1,4), the comparison unit 20 of the AD conversion unit 40(3,1) and the storage unit 25 of the AD conversion unit 40(3,2), and the comparison unit 20 of the AD conversion unit 40(3,3) and the storage unit 25 of the AD conversion unit 40(3,4) to perform AD conversion of the added photoelectric conversion signal. For example, the added photoelectric conversion signal input to the comparison unit 20 of the AD conversion unit 40(1,1) is converted into a digital signal by the comparison unit 20 of the AD conversion unit 40(1,1) and the storage unit 25 of the AD conversion unit 40(1,2), as shown typically by an arrow 91b, and is stored in the storage unit 25 of the AD conversion unit 40(1,2). In addition, the added photoelectric conversion signal input to the comparison unit 20 of the AD conversion unit 40(1,3) is converted into a digital signal by the comparison unit 20 of the AD conversion unit 40(1,3) and the memory unit 25 of the AD conversion unit 40(1,4), as diagrammatically shown by arrow 91d, and is stored in the memory unit 25 of the AD conversion unit 40(1,4).

[0071] Simultaneously with the AD conversion of the photoelectric conversion signal, the read control unit 60 reads out digital signals based on the dark signals stored at the time of the previous AD conversion of the dark signals from the respective storage units 25 of the AD conversion units 40(1,1), 40(1,3), 40(3,1), and 40(3,3). For example, as shown by an arrow 92a, a digital signal based on the added dark signals is output from the storage unit 25 of the AD conversion unit 40(1,1) to the data line 50a. Also, as shown by an arrow 92c, a digital signal based on the added dark signals is output from the storage unit 25 of the AD conversion unit 40(1,3) to the data line 50c. Thereafter, in the same manner, the read control unit 60 sequentially selects the AD conversion units 40 in every other row and reads out digital signals based on the photoelectric conversion signals from each selected AD conversion unit 40.

[0072] Thus, in the third readout method, the readout control unit 60 controls the switches SW1 and SW2 to perform AD conversion using different storage units 25 when performing AD conversion of a dark signal and when performing AD conversion of a photoelectric conversion signal. This allows the image sensor 3 to perform AD conversion of pixel signals and read out the pixel signals converted into digital signals to the data lines 50 in parallel. This allows the pixel signals to be read out in a short time.

[0073] (Comparison of the first to third readout methods of the additive readout process) Fig. 10 is a diagram comparing the first to third readout methods of the additive readout process of the image sensor according to the first embodiment. Fig. 10(a) shows the process in the case of the first readout method, Fig. 10(b) shows the process in the case of the second readout method, and Fig. 10(c) shows the process in the case of the third readout method. Also, Fig. 10(a) to Fig. 10(c) show, on the same time axis, the readout process of the dark signal from the pixel 10, the AD conversion process of the dark signal, the readout process of the digital signal based on the dark signal, the readout process of the photoelectric conversion signal from the pixel 10, the AD conversion process of the photoelectric conversion signal, and the readout process of the digital signal based on the photoelectric conversion signal.

[0074] In the case of the second readout method of Fig. 10(b), the readout control unit 60 sequentially selects the AD conversion units 40 two rows at a time, as described above, and reads out digital signals based on dark signals and digital signals based on photoelectric conversion signals. Therefore, the readout control unit 60 can read out digital signals based on dark signals from each AD conversion unit 40 in about half the time, and can read out digital signals based on photoelectric conversion signals from each AD conversion unit 40 in about half the time, compared to the case of the first readout method of Fig. 10(a). This enables the image sensor 3 to improve the frame rate during shooting.

[0075] 10(c), the readout control unit 60 performs, in parallel, A / D conversion of the dark signal (or photoelectric conversion signal) read out from the pixel and reading out the photoelectric conversion signal (or dark signal) converted into a digital signal, as described above. This allows the image sensor 3 to further improve the frame rate during shooting compared to the second readout method in FIG. 10(b).

[0076] It is possible to provide a storage unit for AD conversion and a storage unit for reading signals to the data lines 50 separately for each pixel 10, but in this case the area of ​​the image sensor would increase. In the present embodiment, it is not necessary to provide a storage unit for AD conversion and a storage unit for reading signals to the data lines 50 separately, and it is possible to prevent the area of ​​the image sensor from increasing.

[0077] According to the above-described embodiment, the following advantageous effects can be obtained. (1) The imaging element 3 includes a first photoelectric conversion unit 11 and a second photoelectric conversion unit 11 that generate electric charges by photoelectric conversion, a first comparison unit 20 that outputs a first signal based on a result of comparing a signal based on the electric charges generated by the first photoelectric conversion unit 11 with a reference signal, a first memory unit 25 that receives the first signal from the first comparison unit 20 and stores a signal based on the first signal, a second comparison unit 20 that outputs a second signal based on a result of comparing a signal based on the electric charges generated by the second photoelectric conversion unit 11 with a reference signal, a second memory unit 25 that receives the second signal from the second comparison unit 20 and stores a signal based on the second signal, a first connection unit (switch SW2) that can connect or disconnect the first comparison unit 20 and the second memory unit 25, and a control unit (readout control unit) that controls the first connection unit to control whether to output the first signal to the first memory unit or the second memory unit. As a result of doing so, the read control unit 60 according to the present embodiment can reduce the readout time of the pixel signals by controlling the switch SW2 to perform the readout process of the pixel signals.

[0078] (2) In this embodiment, the image sensor 3 performs the second readout method and the third readout method by controlling the switch SW1 and the switch SW2. This allows the pixel signal readout process to be performed at high speed. Also, the frame rate during imaging can be improved.

[0079] The following modifications are also within the scope of the present invention, and one or more of the modifications may be combined with the above-described embodiment.

[0080] (Variation 1) In the above-described embodiment, an example has been described in which the read control unit 60 performs an addition read process by adding together signals from a plurality of pixels. The read control unit 60 may perform a process of thinning out pixels in a specific row or column from among all pixels and reading out signals (thinning read process). In the case of thinning read process, the read control unit 60 may also perform a read method similar to the first to third read methods described above.

[0081] (Variation 2) In the above-described embodiment, an example has been described in which the imaging element 3 is configured by laminating the first substrate 111 and the second substrate 112. However, the first substrate 111 and the second substrate 112 do not have to be laminated.

[0082] (Variation 3) In the above-described embodiment, an example has been described in which the data line 50 is configured with a plurality of signal lines corresponding to the number of bits of the digital signal output from the AD conversion unit 40. The data line 50 may be a single signal line or an arbitrary number of signal lines.

[0083] (Variation 4) In the above-described embodiment and modified example, a photodiode is used as the photoelectric conversion unit. However, a photoelectric conversion film (organic photoelectric film) may be used as the photoelectric conversion unit.

[0084] (Variation 5) The imaging elements and imaging devices described in the above-mentioned embodiments and variations may be applied to cameras, smartphones, tablets, cameras built into PCs, in-vehicle cameras, cameras mounted on unmanned aerial vehicles (drones, radio-controlled aircraft, etc.), and the like.

[0085] Although various embodiments and modifications have been described above, the present invention is not limited to these. Other embodiments that are conceivable within the scope of the technical idea of ​​the present invention are also included within the scope of the present invention.

[0086] The disclosures of the following priority applications are incorporated herein by reference: Japan Patent Application No. 2019-69145 (filed March 29, 2019) [Explanation of symbols]

[0087] 1...imaging device, 3...imaging element, 4...control unit, 10...pixel, 11...photoelectric conversion unit, 20...comparison unit, 25...storage unit, 40...AD conversion unit, 60...readout control unit< / n>

Claims

1. a first pixel having a first photoelectric conversion unit that converts light into an electric charge; A second pixel including a second photoelectric conversion unit that converts light into an electric charge and that is arranged alongside the first photoelectric conversion unit in the row direction; A first signal line electrically connected to the first pixel; A second signal line electrically connected to the second pixel; a first comparing section having a first input terminal electrically connected to the first signal line and a first output terminal; a first storage unit electrically connected to the first output terminal; a second comparing section having a second input terminal electrically connected to the second signal line and a second output terminal; a second storage unit electrically connected to the first output terminal and the second output terminal; An imaging element comprising:

2. The imaging element according to claim 1, a first data line electrically connected to the first memory unit; a second data line electrically connected to the second memory unit; An imaging element comprising:

3. The imaging element according to claim 2, An imaging element comprising a signal processing unit electrically connected to the first data lines and the second data lines.

4. The imaging element according to claim 3, the signal processing unit performs a correlated double sampling process using the signal output to the first data line and the signal output to the second data line. Image sensor.

5. The imaging element according to any one of claims 2 to 4, a first selection section for electrically connecting the first storage section and the first data line; a second selection section for electrically connecting the second storage section and the second data line; An imaging element comprising:

6. The imaging element according to claim 5, the first storage unit includes a first latch circuit and a second latch circuit; the second storage unit includes a third latch circuit and a fourth latch circuit; the first selection unit controls an electrical connection between the first latch circuit and the first data line and an electrical connection between the second latch circuit and the first data line; the second selection unit controls an electrical connection between the third latch circuit and the second data line and an electrical connection between the fourth latch circuit and the second data line. Image sensor.

7. The imaging element according to any one of claims 1 to 6, the first pixel has a first floating diffusion portion to which the charge converted by the first photoelectric conversion portion is transferred; the second pixel has a second floating diffusion portion to which the charge converted by the second photoelectric conversion portion is transferred; Image sensor.

8. The imaging element according to claim 7, An imaging element comprising a connection portion for electrically connecting the first floating diffusion portion and the second floating diffusion portion.

9. The imaging element according to claim 8, the connection portion includes a first switch that electrically connects the first floating diffusion portion and the second floating diffusion portion; Image sensor.

10. The imaging element according to claim 9, the connection portion includes a second switch that electrically connects the first floating diffusion portion and the second floating diffusion portion, the second switch is connected in series with the first switch between the first floating diffusion section and the second floating diffusion section; Image sensor.

11. The imaging element according to claim 10, the connection unit has a third switch that electrically connects the first floating diffusion unit and the second floating diffusion unit, the third switch is connected in series with the first switch and the second switch between the first floating diffusion section and the second floating diffusion section; Image sensor.

12. The imaging element according to any one of claims 1 to 6, An imaging element comprising a connection portion for electrically connecting the first signal line and the second signal line.

13. The imaging element according to claim 12, the connection portion includes a first switch that electrically connects the first signal line and the second signal line; Image sensor.

14. The imaging element according to claim 13, the connection portion includes a second switch that electrically connects the first signal line and the second signal line, the second switch is connected in series with the first switch between the first signal line and the second signal line; Image sensor.

15. The imaging element according to claim 14, the connection portion includes a third switch that electrically connects the first signal line and the second signal line, the third switch is connected in series with the first switch and the second switch between the first signal line and the second signal line; Image sensor.

16. The imaging element according to any one of claims 1 to 15, the first photoelectric conversion unit and the second photoelectric conversion unit are disposed on a first substrate; the first storage unit and the second storage unit are disposed on a second substrate stacked on the first substrate; Image sensor.

17. The imaging element according to claim 16, the first comparison unit and the second comparison unit are disposed on the second substrate; Image sensor.

18. The imaging element according to any one of claims 1 to 17, the first comparison unit has a third input terminal to which a reference signal is input for comparison with a signal value of the signal input to the first input terminal; Image sensor.

19. The imaging element according to claim 18, A ramp signal whose signal value changes over time is input to the third input terminal as the reference signal. Image sensor.

20. The imaging element according to any one of claims 1 to 19, the second photoelectric conversion unit is disposed adjacent to the first photoelectric conversion unit in the row direction. Image sensor.

21. The imaging element according to any one of claims 1 to 20, the second comparing unit is arranged next to the first comparing unit in the row direction; Image sensor.

22. The imaging device according to claim 1, a third pixel including a third photoelectric conversion unit that converts light into an electric charge and that is arranged alongside the first photoelectric conversion unit in the column direction; a third signal line electrically connected to the third pixel; a third comparing section having a third input terminal electrically connected to the third signal line and a third output terminal; a third storage unit electrically connected to the third output terminal; An imaging element comprising:

23. The imaging device according to claim 22, a first data line electrically connected to the first memory unit and the third memory unit; a second data line electrically connected to the second memory unit; An imaging element comprising:

24. The imaging element according to claim 23, An imaging element comprising a signal processing unit electrically connected to the first data lines and the second data lines.

25. The imaging device according to claim 24, the signal processing unit performs a correlated double sampling process using the signal output to the first data line and the signal output to the second data line. Image sensor.

26. The imaging element according to any one of claims 23 to 25, a first selection section for electrically connecting the first storage section and the first data line; a second selection section for electrically connecting the second storage section and the second data line; a third selection section for electrically connecting the third storage section and the first data line; An imaging element comprising:

27. The imaging element according to claim 26, the first storage unit includes a first latch circuit and a second latch circuit; the second storage unit includes a third latch circuit and a fourth latch circuit; the third storage unit includes a fifth latch circuit and a sixth latch circuit; the first selection unit controls an electrical connection between the first latch circuit and the first data line and an electrical connection between the second latch circuit and the first data line; the second selection unit controls an electrical connection between the third latch circuit and the second data line and an electrical connection between the fourth latch circuit and the second data line; the third selection unit controls an electrical connection between the fifth latch circuit and the first data line and an electrical connection between the sixth latch circuit and the first data line. Image sensor.

28. The imaging element according to any one of claims 22 to 27, the first pixel has a first floating diffusion portion to which the charge converted by the first photoelectric conversion portion is transferred; the second pixel has a second floating diffusion portion to which the charge converted by the second photoelectric conversion portion is transferred; the third pixel has a third floating diffusion portion to which the charge converted by the third photoelectric conversion portion is transferred; Image sensor.

29. The imaging device according to claim 28, an imaging element comprising a connection portion for electrically connecting the first floating diffusion portion, the second floating diffusion portion, and the third floating diffusion portion;

30. The imaging element according to claim 29, the connection portion includes a first switch that electrically connects the first floating diffusion portion and the third floating diffusion portion; Image sensor.

31. The imaging element according to claim 30, the first switch electrically connects the first floating diffusion section and the second floating diffusion section; Image sensor.

32. The imaging element according to claim 30 or claim 31, the connection unit has a second switch that electrically connects the first floating diffusion unit and the third floating diffusion unit, the second switch is connected in series with the first switch between the first floating diffusion section and the third floating diffusion section; Image sensor.

33. The imaging element according to claim 32, the second switch electrically connects the second floating diffusion section and the third floating diffusion section; Image sensor.

34. The imaging element according to claim 32 or claim 33, the connection unit has a third switch that electrically connects the first floating diffusion unit and the second floating diffusion unit, the third switch is connected in series with the first switch between the first floating diffusion section and the second floating diffusion section; Image sensor.

35. The imaging element according to claim 34, the third switch is connected in series with the second switch between the second floating diffusion section and the third floating diffusion section; Image sensor.

36. The imaging element according to claim 34 or claim 35, the connection unit has a fourth switch that electrically connects the first floating diffusion unit and the second floating diffusion unit, the fourth switch is connected in series with the first switch and the third switch between the first floating diffusion section and the second floating diffusion section; Image sensor.

37. The imaging element according to claim 36, the fourth switch is connected in series with the second switch and the third switch between the second floating diffusion section and the third floating diffusion section; Image sensor.

38. The imaging element according to any one of claims 22 to 27, An imaging element comprising a connection portion for electrically connecting the first signal line, the second signal line, and the third signal line.

39. The imaging element according to claim 29, the connection portion includes a first switch that electrically connects the first signal line and the third signal line; Image sensor.

40. The imaging element according to claim 39, The first switch electrically connects the first signal line and the second signal line. Image sensor.

41. The imaging element according to claim 39 or claim 40, the connection portion includes a second switch that electrically connects the first signal line and the third signal line, the second switch is connected in series with the first switch between the first signal line and the third signal line; Image sensor.

42. The imaging element according to claim 41, the second switch electrically connects the second signal line and the third signal line; Image sensor.

43. The imaging element according to claim 41 or claim 42, the connection portion includes a third switch that electrically connects the first signal line and the second signal line, the third switch is connected in series with the first switch between the first signal line and the second signal line; Image sensor.

44. The imaging element according to claim 43, the third switch is connected in series with the second switch between the second signal line and the third signal line; Image sensor.

45. The imaging element according to claim 43 or claim 44, the connection portion includes a fourth switch that electrically connects the first signal line and the second signal line, the fourth switch is connected in series with the first switch and the third switch between the first signal line and the second signal line; Image sensor.

46. The imaging element according to claim 45, the fourth switch is connected in series with the second switch and the third switch between the second signal line and the third signal line; Image sensor.

47. The imaging element according to any one of claims 22 to 46, the first photoelectric conversion unit, the second photoelectric conversion unit, and the third photoelectric conversion unit are disposed on a first substrate; the first memory unit, the second memory unit, and the third memory unit are disposed on a second substrate stacked on the first substrate; Image sensor.

48. The imaging element according to claim 47, the first comparing unit, the second comparing unit, and the third comparing unit are disposed on the second substrate; Image sensor.

49. The imaging element according to any one of claims 22 to 48, the first comparison unit has a fourth input terminal to which a reference signal is input for comparison with a signal value of the signal input to the first input terminal; Image sensor.

50. The imaging device according to claim 49, A ramp signal whose signal value changes over time is input to the fourth input terminal as the reference signal. Image sensor.

51. The imaging element according to any one of claims 22 to 50, the second photoelectric conversion unit is disposed adjacent to the first photoelectric conversion unit in the row direction. Image sensor.

52. The imaging element according to claim 51, the third photoelectric conversion unit is disposed adjacent to the first photoelectric conversion unit in the column direction. Image sensor.

53. The imaging element according to any one of claims 22 to 50, the third photoelectric conversion unit is disposed adjacent to the first photoelectric conversion unit in the column direction. Image sensor.

54. The imaging device according to claim 22, the second comparing unit is arranged next to the first comparing unit in the row direction; Image sensor.

55. The imaging device according to claim 54, the third comparing section is arranged alongside the first comparing section in the column direction; Image sensor.

56. The imaging device according to claim 22, the third comparing section is arranged alongside the first comparing section in the column direction; Image sensor.

57. The imaging device according to claim 22, a fourth pixel including a fourth photoelectric conversion unit that converts light into an electric charge and that is arranged alongside the second photoelectric conversion unit in the column direction; a fourth signal line electrically connected to the fourth pixel; a fourth comparing section electrically connected to the fourth signal line; a fourth storage unit electrically connected to the fourth comparison unit; An imaging element comprising:

58. The imaging element according to claim 57, the fourth photoelectric conversion unit is disposed adjacent to the second photoelectric conversion unit in the column direction. Image sensor.

59. The imaging device according to claim 58, the fourth photoelectric conversion unit is disposed adjacent to the third photoelectric conversion unit in the row direction. Image sensor.

60. An imaging device comprising an imaging element described in any one of claims 1 to 59.

61. The imaging device according to claim 60, an imaging device comprising a generation unit that generates image data based on a signal output from the imaging element;

62. In the imaging device according to claim 60 or claim 61, an imaging apparatus comprising an optical system for forming a subject image on the imaging element;

Images