Photoelectric conversion device, photoelectric conversion system, mobile object, and semiconductor substrate

Abstract

To provide a technique advantageous for speeding up the readout of signals from pixels.SOLUTION: A photoelectric conversion device includes a pixel array having a plurality of pixels, a capacitively coupled amplifier for amplifying a signal output from the pixel array, and a ΔΣAD converter for converting an analog signal output from the amplifier to a digital signal. The amplifier consists of a plurality of first elements including active elements and capacitive elements. The ΔΣAD converter consists of a plurality of second elements including active elements and capacitive elements. The breakdown voltage of at least one of the plurality of second elements constituting the ΔΣAD converter is lower than the breakdown voltage of the plurality of first elements constituting the amplifier.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] The present invention relates to a photoelectric conversion device, a photoelectric conversion system, a moving object, and a semiconductor substrate. [Background technology]

[0002] Patent Document 1 describes a solid-state imaging device equipped with a column circuit having a ΔΣAD converter. The column circuit includes an amplifier connected to a signal line driven by a pixel, and a ΔΣAD converter that performs AD conversion of the output of the amplifier, and the ΔΣAD converter includes a ΔΣ modulator and a decimation filter circuit. The pixel is driven by an analog power supply, and the amplifier and the ΔΣAD converter are driven by a digital power supply. Alternatively, depending on the amplitude level of the pixel, the amplifier is driven by a power supply having a higher voltage than the digital power supply, for example, an analog power supply. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2013-90234 A Summary of the Invention [Problem to be solved by the invention]

[0004] Sharing the structures of transistors and capacitive elements in an entire solid-state imaging device or photoelectric conversion device including pixels and circuits for reading out signals from the pixels is advantageous for simplifying the design and process, but on the other hand, such sharing may be disadvantageous in terms of increasing the speed of reading out signals from the pixels.

[0005] An object of the present invention is to provide an advantageous technique for increasing the speed of reading out signals from pixels. [Means for solving the problem]

[0006] One aspect of the present invention relates to a photoelectric conversion device, the photoelectric conversion device comprising: a pixel array having a plurality of pixels; a capacitively coupled amplifier that amplifies a signal output from the pixel array; and a ΔΣ AD converter that converts an analog signal output from the amplifier into a digital signal, the amplifier being composed of a plurality of first elements including active elements and capacitive elements, the ΔΣ AD converter being composed of a plurality of second elements including active elements and capacitive elements, and the withstand voltage of at least one second element of the plurality of second elements constituting the ΔΣ AD converter being lower than the withstand voltage of the plurality of first elements constituting the amplifier. Ku , The withstand voltage of the at least one second element is lower than the withstand voltage of a second element different from the at least one second element among the plurality of second elements. . Effect of the Invention

[0007] According to the present invention, an advantageous technique is provided for speeding up the readout of signals from pixels. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a diagram showing the configuration of a photoelectric conversion device according to an embodiment. [Diagram 2] FIG. 2A shows an example of a pixel configuration, and FIG. 2B shows an example of a pixel operation. [Diagram 3] 1A, 1B, and 1C are diagrams showing a first configuration example, a second configuration example, and a third configuration example, of one column of amplifiers; [Figure 4] FIG. 4 is a diagram showing an example of the configuration of an amplifier circuit in the amplifier shown in FIGS. [Diagram 5] FIG. 2 shows a first example configuration of one column of ΔΣ AD converters. [Figure 6] FIG. 13 is a diagram showing a second configuration example of one column of ΔΣ AD converters. [Figure 7] FIG. 2 is a diagram showing a first specific example of a ΔΣ AD converter for one column. [Figure 8] FIG. 13 is a diagram showing a second specific example of a ΔΣ AD converter for one column. [Figure 9] FIG. 4 is a diagram showing an example of the configuration of a quantizer. [Figure 10] FIG. 2 is a diagram showing an example of the configuration of a voltage-current converter. [Figure 11]FIG. 4 shows an example of the configuration of a clip circuit. [Figure 12] FIG. 2A shows an example of the configuration of a transistor in an amplifier, and FIG. 2B shows an example of the configuration of a transistor in a ΔΣ AD converter. [Figure 13] 1A shows an example of the configuration of a capacitive element of an amplifier, FIG. 1B shows an example of the configuration of a capacitive element of a ΔΣ AD converter, and FIG. 1C shows an example of the configuration of a capacitive element of a ΔΣ AD converter. [Figure 14] FIG. 1 is a diagram showing an example of the configuration of a photoelectric conversion system according to an embodiment. [Figure 15] FIG. 1 is a diagram showing the configuration of a photoelectric conversion system and a moving object according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, the embodiments will be described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted.

[0010] 1 shows a configuration of a photoelectric conversion device 1 according to an embodiment. The photoelectric conversion device 1 can be configured as an image sensor or an imaging device. From another perspective, the photoelectric conversion device 1 can be configured to capture an image and output the captured image or an image or information obtained by processing the captured image to an external device, such as a storage device, a processing device, a display device, or a communication device.

[0011] The photoelectric conversion device 1 may include a pixel array 10 having a plurality of pixels 11, and a current source group 20 including a plurality of current sources respectively connected to a plurality of vertical signal lines SL provided in a plurality of columns of the pixel array 10. The photoelectric conversion device 1 may also include an amplifier group 30 that amplifies signals output from the pixel array 10 to the plurality of vertical signal lines SL, and a ΔΣ AD converter group 40 that converts analog signals output from the amplifier group 30 into digital signals.

[0012] The photoelectric conversion device 1 may also include a data processing unit (processor) 50 that processes the digital signals output from the ΔΣ AD converter group 40 and obtains processed information (e.g., image) information. The photoelectric conversion device 1 may also include an output unit 60 that outputs at least one of the digital signals output from the ΔΣ AD converter group 40 and the information obtained by processing by the data processing unit 50. The data processing unit 50 may be configured to supply the digital signals generated by the Σ AD converter group 40 to the output unit 60 in a predetermined order. The photoelectric conversion device 1 may also include a row selection unit 70 that selects a row of the pixel array 10. The photoelectric conversion device 1 may also include a control unit 80 that controls the amplifier group 30, the ΔΣ AD converter group 40, the data processing unit 50, the row selection unit 70, etc.

[0013] The photoelectric conversion device 1 may have all the components shown in FIG. 1 on one semiconductor substrate (typically a silicon semiconductor substrate). As another example, the photoelectric conversion layer 1 may have a stacked chip configuration in which a plurality of semiconductor substrates are stacked. In this case, the pixel array 10 may be disposed on a first semiconductor substrate, which is a part of the plurality of semiconductor substrates. At least the amplifier group 30 and the ΔΣAD converter group 40 may be disposed on another second semiconductor substrate. The second semiconductor substrate may further include the current source group 20, the data processing section 50, the output section 60, the row selection section 70, and the control section 80. When a third semiconductor substrate is further provided, the data processing section 50 and the output section 60 may be disposed on the third semiconductor substrate.

[0014] FIG. 2(a) shows a configuration example of a pixel 11, and FIG. 2(b) shows an operation example of the pixel 11. The pixel 11 may include a photoelectric conversion element PD, a floating diffusion FD, and a transfer transistor TT that transfers charges generated in the photoelectric conversion element PD and accumulated in an accumulation section of the photoelectric conversion element PD to the floating diffusion FD. The pixel 11 may also include a reset transistor RT that resets the voltage of the floating diffusion FD, and an amplification transistor AT that outputs a voltage corresponding to the voltage of the floating diffusion FD to a vertical signal line SL. A corresponding current source CS of the current source group 20 is connected to the vertical signal line SL, and the amplification transistor AT may form a source follower circuit. The signal or voltage output to the vertical signal line SL may be amplified by a corresponding amplifier (an amplifier 31 described later) of the amplifier group 30.

[0015] The pixel 11 may further include a selection transistor ST. When the selection transistor ST is turned on, the pixel 11 having the selection transistor ST is selected. When the selection transistor ST is turned on, the output of the amplification transistor AT is output to a vertical signal line SL. The transfer transistor TT, the reset transistor RT, and the selection transistor ST can be controlled by a row selection unit 70 via a transfer signal line TX, a reset signal line RES, and a selection signal line SEL, respectively.

[0016] In Fig. 2(b), the voltages of the selection signal line SEL, the reset signal line RES, the transfer signal line TX, and the vertical signal line SL are illustrated as SEL, RES, TX, and POUT. In the example of Fig. 2(a) and (b), the selection signal SEL, the reset signal RES, and the transfer signal TX supplied to the selection signal line SEL, the reset signal line RES, and the transfer signal line TX are at a high active level. For convenience, the symbols SEL, RES, and TX are assigned to both the signal line name and the signal name.

[0017] When the reset signal RES changes from high to low and the reset by the reset transistor RT is released, the voltage level that appears on the vertical signal line SL can be called the noise level. After that, the transfer signal TX goes high, causing the charge of the photoelectric conversion element PD to be transferred to the floating diffusion FD by the transfer transistor TX. This causes the voltage of the floating diffusion FD to change, and a voltage level corresponding to that voltage appears on the vertical signal line SL. This voltage level is called the optical signal level.

[0018] 3(a), (b), and (c) respectively show a first configuration example, a second configuration example, and a third configuration example of the amplifiers 31 for one column. The amplifier group 30 includes a plurality of amplifiers 31 corresponding to the plurality of columns of the pixel array 10. The amplifiers 31 in the first configuration example, the second configuration example, and the third configuration example are capacitively coupled amplifiers.

[0019] The amplifier 31 of the first configuration example shown in FIG. 3(a) amplifies a pixel signal supplied from the pixel 11 to the vertical signal line SL, and outputs a voltage signal corresponding to the pixel signal from an output node AS. The amplifier 31 of the first configuration example may be composed of a plurality of first elements. The plurality of first elements may include at least one active element and at least one capacitive element. The amplifier 31 of the first configuration example may include an amplifier circuit 301, a first capacitive element C1, and a feedback capacitance 302. The amplifier circuit 301 may include at least one active element (transistor). The amplifier circuit 301 may be, for example, an inverting amplifier circuit.

[0020] The first capacitance element C1 may be arranged between an input node of the amplifier 31 (in this example, the vertical signal line SL) and an input node of the amplifier circuit 301. More specifically, the first capacitance element C1 may be arranged in series between the input node of the amplifier 31 and the input node of the amplifier circuit 301. The feedback capacitance 302 may be arranged to connect the input terminal of the amplifier circuit 301 and the output terminal of the amplifier circuit 301. The feedback capacitance 302 may be configured as a variable capacitance. This provides a function of changing the gain for amplifying the pixel signal. The amplifier 31 may be provided with a clipping circuit 311 that clips its output.

[0021] The amplifier 31 of the second configuration example shown in FIG. 3(b) amplifies a pixel signal supplied from the pixel 11 to the vertical signal line SL, and outputs a voltage signal corresponding to the pixel signal from the output node AS. The amplifier 31 of the second configuration example may be composed of a plurality of first elements. The plurality of first elements may include at least one active element and at least one capacitive element. The amplifier 31 of the second configuration example may include an amplifier circuit 301, a first capacitive element C1, and switches (transistors) 303, 304, and 305. The amplifier circuit 301 may include at least one active element (transistor). The amplifier circuit 301 may be, for example, an inverting amplifier circuit. The first capacitive element C1 may be arranged between an input node of the amplifier 31 (in this example, the vertical signal line SL) and an input node of the amplifier circuit 301. More specifically, the first capacitive element C1 may be arranged in series between the input node of the amplifier 31 and the input node of the amplifier circuit 301.

[0022] 3(c) amplifies a pixel signal supplied from the pixel 11 to the vertical signal line SL, and outputs a current signal corresponding to the pixel signal. From another perspective, the amplifier 31 of the third configuration example outputs a current signal obtained by amplifying the difference between the optical signal level and the noise level supplied from the pixel 11.

[0023] The amplifier 31 of the third configuration example may include a first amplifier 351 that amplifies an optical signal level, a second amplifier 352 that amplifies a noise level, and a resistive element 330 that connects an output terminal of the first amplifier 351 and an output terminal of the second amplifier 352. The first amplifier 351 outputs a first voltage obtained by amplifying the optical signal level, and the second amplifier 352 outputs a second voltage obtained by amplifying the noise level. As a result, a current having a value obtained by dividing the difference between the first voltage and the second voltage by the resistance value of the resistive element 330 flows through the resistive element 330, and a current corresponding to this flows from the output node AS.

[0024] The first amplifier 351 and the second amplifier 352 may have a configuration similar to that of the amplifier 31 of the second configuration example. The first amplifier 351 may be composed of a plurality of first elements. The plurality of first elements may include at least one active element and at least one capacitive element. The first amplifier 351 may include an amplifier circuit 321, a first capacitive element C11, and switches (transistors) 323, 324, and 325. The amplifier circuit 321 may include at least one active element (transistor). The amplifier circuit 321 may be, for example, an inverting amplifier circuit. The first capacitive element C11 may be disposed between an input node of the amplifier 31 (in this example, the vertical signal line SL) and an input node of the amplifier circuit 321. More specifically, the first capacitive element C11 may be disposed in series between the input node of the amplifier 31 and the input node of the amplifier circuit 321.

[0025] The second amplifier 352 may be composed of a plurality of first elements. The plurality of first elements may include at least one active element and at least one capacitive element. The second amplifier 352 may include an amplifier circuit 331, a first capacitive element C12, and switches (transistors) 333, 334, and 335. The amplifier circuit 331 may include at least one active element (transistor). The amplifier circuit 331 may be, for example, an inverting amplifier circuit. The first capacitive element C12 may be disposed between an input node of the amplifier 31 (in this example, the vertical signal line SL) and an input node of the amplifier circuit 331. More specifically, the first capacitive element C12 may be disposed in series between the input node of the amplifier 31 and the input node of the amplifier circuit 331.

[0026] 4 shows an example configuration of the amplifier circuits 301, 321, and 331. The amplifier circuits 301, 321, and 331 can be configured, for example, with a series-connected transistor 361 and a current source 362. Alternatively, although not shown, the amplifier circuits 301, 321, and 331 may be configured with a differential amplifier circuit.

[0027] Fig. 5 shows a first configuration example of one column of the ΔΣ AD converter 41. The multiple pixels 11 constituting one column of the pixel array 10 are represented by one pixel 11. The ΔΣ AD converter group 40 includes multiple ΔΣ AD converters 41 corresponding to the multiple columns of the pixel array 10, respectively. The ΔΣ AD converter 41 illustrated in Fig. 5 has the configuration of a first-order ΔΣ AD converter.

[0028] The ΔΣ AD converter 41 may include, for example, a subtractor 411, an integrator 412, a quantizer 413, a DA converter 414, and a decimation filter 420. The subtractor 411, the integrator 412, the quantizer 413, and the DA converter 414 may configure a ΔΣ modulator. The subtractor 411 calculates the difference between the signal supplied from the amplifier 31 and the signal supplied from the DA converter 414, and supplies the difference to the integrator 412. The integrator 412 integrates the signal supplied from the subtractor 411, and supplies the integration result to the quantizer 413.

[0029] The quantizer 413 quantizes the integration result supplied from the integrator 412. Specifically, the quantizer 413 may quantize the integration result supplied from the integrator 412 by comparing the integration result with a predetermined reference voltage, that is, convert the integration result into a 1-bit digital signal. The decimation filter 420 is a type of digital low-pass filter, and converts the 1-bit digital signal output from the quantizer 413 into a multi-bit digital signal by decimation processing. The ΔΣ AD converter 41 is composed of a plurality of second elements, and the plurality of second elements may include a plurality of active elements and a plurality of capacitive elements.

[0030] In one embodiment, a second withstand voltage, which is the withstand voltage of at least one of the multiple second elements constituting the ΔΣAD converter 41, is lower than a first withstand voltage, which is the withstand voltage of the multiple first elements constituting the amplifier 31. Such a configuration contributes to high-speed operation of the second element having the second withstand voltage, and is advantageous for speeding up the operation of the ΔΣAD converter 41, in other words, advantageous for speeding up the readout of signals from the pixels 11 of the pixel array 10. Alternatively, such a configuration contributes to reducing the area occupied by the ΔΣAD converter 41, in other words, advantageous for reducing the area occupied by a circuit for reading out signals from the pixels 11 of the pixel array 10.

[0031] The photoelectric conversion device 1 can be configured such that the maximum voltage applied to the at least one second element having the second withstand voltage is smaller than the maximum voltage applied to the plurality of first elements. Such a configuration reduces the voltage amplitude in the second element having the second withstand voltage, which is advantageous for speeding up the readout of signals from the pixels 11 of the pixel array 10.

[0032] The ΔΣ AD converter 41 may be composed of a plurality of blocks, for example, a subtractor 411, an integrator 412, a quantizer 413, a DA converter 414, and a decimation filter 420. The withstand voltage of a second element constituting at least one of these multiple blocks may be set lower than the withstand voltage of a plurality of first elements constituting the amplifier 31.

[0033] In the first aspect, the withstand voltage of at least the second element constituting the decimation filter 420 among the multiple second elements constituting the ΔΣ AD converter 41 can be made lower than the withstand voltage of the multiple first elements constituting the amplifier 31. The decimation filter 420 is the block that should operate at the highest speed among the multiple blocks constituting the ΔΣ AD converter 41. The fact that the withstand voltage of the second element constituting the decimation filter 420 is lower than the withstand voltage of the multiple first elements constituting the amplifier 31 contributes to high-speed operation of the decimation filter 420. Reducing the withstand voltage of the second element makes it possible, for example, to reduce the thickness of the gate oxide film and / or shorten the gate length, which can facilitate high-speed operation.

[0034] In the second aspect, the withstand voltage of at least the second element constituting the quantizer 413 among the multiple second elements constituting the ΔΣ AD converter 41 can be made lower than the withstand voltage of the multiple first elements constituting the amplifier 31. The quantizer 413 is a block that should operate at high speed, similar to the decimation filter 420. The fact that the withstand voltage of the second element constituting the quantizer 413 is lower than the withstand voltage of the multiple first elements constituting the amplifier 31 contributes to the high-speed operation of the quantizer 413. In addition, the withstand voltage of at least the second element constituting the decimation filter 420 and the quantizer 413 among the multiple second elements constituting the ΔΣ AD converter 41 can be made lower than the withstand voltage of the multiple first elements constituting the amplifier 31. Here, the withstand voltage of the second element constituting the quantizer 413 and the decimation filter 420 may be lower than the withstand voltage of the second elements constituting the subtractor 411, the integrator 412, and the DA converter 414.

[0035] In a third aspect, the withstand voltage of at least the second element constituting the integrator 412 among the multiple second elements constituting the ΔΣ AD converter 41 can be made lower than the withstand voltage of the multiple first elements constituting the amplifier 31. Furthermore, the withstand voltage of at least the second elements constituting the decimation filter 420, the quantizer 413, and the integrator 412 among the multiple second elements constituting the ΔΣ AD converter 41 can be made lower than the withstand voltage of the multiple first elements constituting the amplifier 31. Here, the withstand voltage of the second elements constituting the integrator 412, the quantizer 413, and the decimation filter 420 may be lower than the withstand voltage of the second elements constituting the subtractor 411 and the DA converter 414.

[0036] In a fourth aspect, the withstand voltage of at least the second element constituting the DA converter 414 among the multiple second elements constituting the ΔΣAD converter 41 can be made lower than the withstand voltage of the multiple first elements constituting the amplifier 31. Furthermore, the withstand voltage of at least the second elements constituting the decimation filter 420, the quantizer 413, the integrator 412 and the DA converter 414 among the multiple second elements constituting the ΔΣAD converter 41 can be made lower than the withstand voltage of the multiple first elements constituting the amplifier 31. Here, the withstand voltage of the second elements constituting the DA converter 414, the integrator 412, the quantizer 413 and the decimation filter 420 may be lower than the withstand voltage of the second element constituting the subtractor 411.

[0037] The output signal of the amplifier 31 is input to the subtractor 411. Therefore, the subtractor 411 may be required to have a withstand voltage according to the maximum value of the output signal of the amplifier 31. For example, the amplifier 31 may be driven by a first power supply voltage (e.g., 3.3 V), and the subtractor 411 may also be driven by the first power supply voltage. On the other hand, the integrator 412, the quantizer 413, the DA converter 414, and the decimation filter 420 may be driven by a second power supply voltage (e.g., 1.2 V) lower than the first power supply voltage.

[0038] FIG. 6 shows a second configuration example of one column of the ΔΣAD converter 41. The pixels 11 constituting one column of the pixel array 10 are represented by one pixel 11. The ΔΣAD converter 41 illustrated in FIG. 6 has a configuration of a second-order ΔΣAD converter. The ΔΣAD converter 41 may include a first subtractor 411, a first integrator 412, a second subtractor 415, a second integrator 416, a quantizer 413, a first DA converter 414, a second DA converter 417, and a decimation filter 420. The first subtractor 411 outputs the difference between the signal supplied to the ΔΣAD converter 41 and the output of the first DA converter 414. The first integrator 412 integrates the output of the first subtractor 411. The second subtractor 415 outputs the difference between the output of the first integrator 416 and the output of the second DA converter 417. The second integrator 416 integrates the output of the second subtractor 415. The quantizer 413 quantizes the output of the second integrator 416. The first DA converter 414 and the second DA converter 417 perform DA conversion of the output of the quantizer 413. The ΔΣ AD converter 41 is composed of a plurality of second elements, and the plurality of second elements may include a plurality of active elements and a plurality of capacitive elements.

[0039] The ΔΣAD converter 41 may be composed of a plurality of blocks. The first block may be composed of a decimation filter 420. The second block may be composed of a quantizer 413. The third block may be composed of a first integrator 412 and a second integrator 416. The fourth block may be composed of a first DA converter 414 and a second DA converter 417. The fifth block may be composed of a first subtractor 411 and a second subtractor 415. The withstand voltage of the second element constituting at least one of these plurality of blocks may be made lower than the withstand voltage of the plurality of first elements constituting the amplifier 31.

[0040] In the first aspect, the withstand voltage of at least the second elements constituting the first block among the multiple second elements constituting the ΔΣ AD converter 41 can be made lower than the withstand voltage of the multiple first elements constituting the amplifier 31. The decimation filter 420 constituting the first block is the block that should operate at the highest speed among the multiple blocks constituting the ΔΣ AD converter 41. The fact that the withstand voltage of the second elements constituting the first block is lower than the withstand voltage of the multiple first elements constituting the amplifier 31 contributes to high-speed operation of the first block.

[0041] In the second aspect, the withstand voltage of at least the second elements constituting the second block among the multiple second elements constituting the ΔΣ AD converter 41 can be made lower than the withstand voltage of the multiple first elements constituting the amplifier 31. The quantizer 413 constituting the second block is a block that should operate at high speed, similar to the decimation filter 420. The fact that the withstand voltage of the second elements constituting the second block is lower than the withstand voltage of the multiple first elements constituting the amplifier 31 contributes to the high-speed operation of the quantizer 413. Furthermore, the withstand voltage of at least the second elements constituting the first block and the second block among the multiple second elements constituting the ΔΣ AD converter 41 can be made lower than the withstand voltage of the multiple first elements constituting the amplifier 31. Here, the withstand voltage of the second elements constituting the first block and the second block may be lower than the withstand voltage of the second elements constituting the third, fourth, and fifth blocks.

[0042] In a third aspect, the withstand voltage of at least the second elements constituting the third block among the multiple second elements constituting the ΔΣ AD converter 41 can be made lower than the withstand voltage of the multiple first elements constituting the amplifier 31. Also, the withstand voltage of at least the second elements constituting the first, second and third blocks among the multiple second elements constituting the ΔΣ AD converter 41 can be made lower than the withstand voltage of the multiple first elements constituting the amplifier 31. Here, the withstand voltage of the second elements constituting the first, second and third blocks may be lower than the withstand voltage of the second elements constituting the fourth and fifth blocks.

[0043] In the fourth aspect, the withstand voltage of at least the second elements constituting the fourth block among the plurality of second elements constituting the ΔΣAD converter 41 may be made lower than the withstand voltage of the plurality of first elements constituting the amplifier 31. Also, the withstand voltage of at least the second elements constituting the first, second, third and fourth blocks among the plurality of second elements constituting the ΔΣAD converter 41 may be made lower than the withstand voltage of the plurality of first elements constituting the amplifier 31. Here, the withstand voltage of the second elements constituting the first, second, third and fourth blocks may be lower than the withstand voltage of the second element constituting the subtractor 411. The output signal of the amplifier 31 is input to the subtractor 411 constituting the fifth block. Therefore, the subtractor 411 constituting the fifth block may be required to have a withstand voltage according to the maximum value of the output signal of the amplifier 31. For example, the amplifier 31 may be driven by a first power supply voltage (e.g., 3.3 V), and the first subtractor 411 constituting a part of the first block may also be driven by the first power supply voltage. On the other hand, the first, second, third and fourth blocks may be driven by a second power supply voltage (eg, 1.2V) lower than the first power supply voltage.

[0044] 7 shows a first specific example of the ΔΣAD converter 41 for one column. The ΔΣAD converter 41 of the first specific example is a first-order voltage integration type ΔΣAD converter. The ΔΣAD converter 41 of the first specific example is suitable for combination with the amplifier 31 of the first and second configuration examples shown in FIGS. 3(a) and 3(b), for example. The ΔΣAD converter 41 of the first specific example may include a subtractor 431, an integrator 432, a quantizer 433, a DA converter 434, and a decimation filter 420.

[0045] From one viewpoint, the multiple second elements constituting the ΔΣAD converter 41 of the first specific example may include a second capacitance element C21 that is charged by a current supplied to an input node of the ΔΣAD converter 41 (in this example, the output node AS of the amplifier 31). In one example, the capacitance value of the second capacitance element C21 is smaller than the capacitance value of the first capacitance element C1 described above. Here, the withstand voltage of the second capacitance element C21 is lower than the withstand voltage of the first capacitance element C1 described above.

[0046] 8 shows a second specific example of one column of the ΔΣAD converter 41. The ΔΣAD converter 41 of the second specific example is a second-order current integration type ΔΣAD converter. The ΔΣAD converter 41 of the second specific example is suitable for combination with the amplifier 31 of the third configuration example shown in FIG. 3(c), for example.

[0047] The ΔΣAD converter 41 of the second specific example may include a first integrator 441, a voltage-current converter 442, a second integrator 443, a quantizer 444, a first DA converter 445, a second DA converter 446, and a decimation filter 420. The first integrator 441 integrates a current supplied to an input node (in this example, the output node AS of the amplifier 31) n1 of the ΔΣAD converter 41. The voltage-current converter 442 converts the voltage of the input node n1 into a current. The second integrator 443 integrates a current supplied to an intermediate node n2 connected to the output of the voltage-current converter 442. The quantizer 444 quantizes the voltage of the intermediate node n2. The first DA converter 445 extracts a predetermined current from the input node n1 according to the output of the quantizer 444. The second DA converter 446 extracts a predetermined current from the intermediate node n2 according to the output of the quantizer 444. The decimation filter 420 converts the 1-bit digital signal output from the quantizer 444 into a multi-bit digital signal by decimation processing.

[0048] In the first aspect, the withstand voltage of at least the second element constituting decimation filter 420 among the multiple second elements constituting ΔΣ AD converter 41 can be made lower than the withstand voltage of the multiple first elements constituting amplifier 31. Decimation filter 420 is the block that should operate at the highest speed among the multiple blocks constituting ΔΣ AD converter 41. The fact that the withstand voltage of the second element constituting decimation filter 420 is lower than the withstand voltage of the multiple first elements constituting amplifier 31 contributes to high-speed operation of decimation filter 420.

[0049] In the second aspect, the withstand voltage of at least the second element constituting the quantizer 444 among the multiple second elements constituting the ΔΣ AD converter 41 can be made lower than the withstand voltage of the multiple first elements constituting the amplifier 31. The quantizer 444 is a block that should operate at high speed, similar to the decimation filter 420. The fact that the withstand voltage of the second element constituting the quantizer 444 is lower than the withstand voltage of the multiple first elements constituting the amplifier 31 contributes to high-speed operation of the quantizer 444. In addition, the withstand voltage of at least the second element constituting the decimation filter 420 and the quantizer 444 among the multiple second elements constituting the ΔΣ AD converter 41 can be made lower than the withstand voltage of the multiple first elements constituting the amplifier 31. Here, the withstand voltage of the second elements constituting the quantizer 444 and the decimation filter 420 may be lower than the withstand voltage of the second elements constituting the first integrator 441, the voltage-to-current converter 442, the second integrator 443, the first DA converter 445, and the second DA converter 445.

[0050] In a third aspect, the withstand voltage of at least the second elements constituting the first integrator 441 and the second integrator 443 among the multiple second elements constituting the ΔΣAD converter 41 can be made lower than the withstand voltage of the multiple first elements constituting the amplifier 31. Also, the withstand voltage of at least the second elements constituting the decimation filter 420, the quantizer 413, the first integrator 441 and the second integrator 443 among the multiple second elements constituting the ΔΣAD converter 41 can be made lower than the withstand voltage of the multiple first elements constituting the amplifier 31. Here, the withstand voltage of the second elements constituting the first integrator 441, the voltage-current converter 442, the second integrator 443, the quantizer 444 and the decimation filter 420 may be lower than the withstand voltage of the second elements constituting the first DA converter 445 and the second DA converter 446.

[0051] In a fourth aspect, the withstand voltage of at least the second elements constituting the first DA converter 445 and the second DA converter 446 among the multiple second elements constituting the ΔΣ AD converter 41 can be made lower than the withstand voltage of the multiple first elements constituting the amplifier 31. In addition, the withstand voltage of the second elements constituting the decimation filter 420, the quantizer 444, the integrator 412 and the DA converter 414 among the multiple second elements constituting the ΔΣ AD converter 41 can be made lower than the withstand voltage of the multiple first elements constituting the amplifier 31.

[0052] Fig. 9 shows a configuration example of the quantizers 413 and 444. As illustrated in Fig. 9, the quantizers 413 and 444 can be configured by a comparator or a differential amplifier. The multiple second elements that configure the quantizers 413 and 444 can have the same withstand voltage.

[0053] Fig. 10 shows a configuration example of voltage-current converter 442. As illustrated in Fig. 10, voltage-current converter 442 may be configured by a differential amplifier. A plurality of second elements constituting voltage-current converter 442 may have the same withstand voltage.

[0054] 11 shows an example of the configuration of the clip circuit 311. The clip circuit 311 may include a transistor disposed between the output node AS of the amplifier 31 and a predetermined voltage. A voltage VCLIP for limiting the voltage of the output node AS may be supplied to the gate of the transistor.

[0055] 12(a) typically shows the structure of a transistor among a plurality of first elements constituting the amplifier 31, and FIG. 12(b) typically shows the structure of a transistor among at least one of a plurality of second elements constituting the ΔΣAD converter 41. As typically shown in FIG. 12(a) and (b), at least one transistor constituting the ΔΣAD converter 41 may have a gate oxide film thinner than the gate oxide film of the transistor constituting the amplifier 31. At least one transistor constituting the ΔΣAD converter 41 may have a gate length shorter than the gate length of the transistor constituting the amplifier 31.

[0056] 13(a) illustrates the structure of at least one first element (capacitive element) among the multiple first elements that constitute the amplifier 31. As shown in FIG. 13(a), the first element may include a diffusion capacitance between two electrodes E1 and E2. FIG. 13(b) illustrates the structure of at least one second element (capacitive element) that constitutes the ΔΣAD converter 41. As shown in FIG. 13(c), the second element may be an MIM capacitance in which two electrodes E1 and E2 are stacked with an interlayer insulating film interposed therebetween. FIG. 13(c) illustrates the structure of at least one second element (capacitive element) constituting the ΔΣAD converter 41. As shown in FIG. 13(c), the second element may be an MIM capacitance in which two electrodes E1 and E2 are arranged in the same layer. The at least one second element (capacitive element) constituting the ΔΣAD converter 41 may include at least one of an MIM capacitance and an MOM capacitance. The MOM capacitance and the MIM capacitance are examples of capacitive elements formed of opposing patterns, and the patterns may include metal patterns or metallized patterns.

[0057] In one configuration example, the sum of the capacitance values ​​of the capacitance elements among the multiple second elements of the ΔΣ AD converter 41 is smaller than the sum of the capacitance values ​​of the capacitance elements among the multiple first elements of the amplifier 31. In another configuration example, the minimum value of all the capacitance elements that the ΔΣ AD converter 41 has is smaller than the minimum value of the capacitance values ​​of all the capacitance elements that the amplifier 31 has.

[0058] Fig. 14 is a block diagram showing a configuration of a photoelectric conversion system 1200 according to this embodiment. The photoelectric conversion system 1200 of this embodiment includes a photoelectric conversion device 1215. Here, the photoelectric conversion device 1215 is the photoelectric conversion device 1 described in the above embodiment. The photoelectric conversion system 1200 can be used as, for example, an imaging system. Specific examples of the imaging system include a digital still camera, a digital camcorder, and a surveillance camera. Fig. 15 shows an example of a digital still camera as the photoelectric conversion system 1200.

[0059] 14 includes a photoelectric conversion device 1215, a lens 1213 that forms an optical image of a subject on the photoelectric conversion device 1215, an aperture 1214 that varies the amount of light passing through the lens 1213, and a barrier 1212 that protects the lens 1213. The lens 1213 and the aperture 1214 form an optical system that focuses light on the photoelectric conversion device 1215.

[0060] The photoelectric conversion system 1200 includes a signal processing unit 1216 that processes an output signal output from a photoelectric conversion device 1215. The signal processing unit 1216 performs signal processing operations to perform various corrections and compression on an input signal as necessary and output the signal. The photoelectric conversion system 1200 further includes a buffer memory unit 1206 for temporarily storing image data, and an external interface unit (external I / F unit) 1209 for communicating with an external computer or the like. The photoelectric conversion system 1200 further includes a recording medium 1211 such as a semiconductor memory for recording or reading out imaging data, and a recording medium control interface unit (recording medium control I / F unit) 1210 for recording or reading out the imaging data on the recording medium 1211. The recording medium 1211 may be built in the photoelectric conversion system 1200 or may be removable. In addition, communication between the recording medium control I / F unit 1210 and the recording medium 1211 and communication from the external I / F unit 1209 may be performed wirelessly.

[0061] Furthermore, the photoelectric conversion system 1200 has an overall control / calculation unit 1208 that performs various calculations and controls the entire digital still camera, and a timing generation unit 1217 that outputs various timing signals to the photoelectric conversion device 1215 and the signal processing unit 1216. Here, the timing signals and the like may be input from the outside, and the photoelectric conversion system 1200 may have at least the photoelectric conversion device 1215 and the signal processing unit 1216 that processes the output signal output from the photoelectric conversion device 1215. As described in the fourth embodiment, the timing generation unit 1217 may be mounted on the photoelectric conversion device. The overall control / calculation unit 1208 and the timing generation unit 1217 may be configured to implement a part or all of the control functions of the photoelectric conversion device 1215.

[0062] The photoelectric conversion device 1215 outputs the image signal to the signal processing unit 1216. The signal processing unit 1216 performs a predetermined signal processing on the image signal output from the photoelectric conversion device 1215 and outputs image data. The signal processing unit 1216 generates an image using the image signal. The signal processing unit 1216 may perform distance measurement calculation on the signal output from the photoelectric conversion device 1215. The signal processing unit 1216 and the timing generating unit 1217 may be mounted on the photoelectric conversion device. That is, the signal processing unit 1216 and the timing generating unit 1217 may be provided on a substrate on which pixels are arranged, or may be provided on a different substrate. By configuring an imaging system using the photoelectric conversion device of each of the above-mentioned embodiments, an imaging system capable of acquiring a better quality image can be realized.

[0063] The photoelectric conversion system and the moving body of this embodiment will be described with reference to FIG. 15. FIG. 15 shows an example of a vehicle system and a photoelectric conversion system mounted thereon for capturing images. The photoelectric conversion system 1301 includes a photoelectric conversion device 1302, an image preprocessing unit 1315, an integrated circuit 1303, and an optical system 1314. The optical system 1314 forms an optical image of a subject on the photoelectric conversion device 1302. The photoelectric conversion device 1302 converts the optical image of the subject formed by the optical system 1314 into an electrical signal. The photoelectric conversion device 1302 is the photoelectric conversion device 1 described above. The image preprocessing unit 1315 performs a predetermined signal processing on the signal output from the photoelectric conversion device 1302. The function of the image preprocessing unit 1315 may be incorporated in the photoelectric conversion device 1302. The photoelectric conversion system 1301 is provided with at least two sets of an optical system 1314 , a photoelectric conversion device 1302 , and an image pre-processing unit 1315 , and the output from each set of image pre-processing units 1315 is input to the integrated circuit 1303 .

[0064] The integrated circuit 1303 is an integrated circuit for use in an imaging system, and includes an image processing unit 1304 including a memory 1305, an optical distance measuring unit 1306, a distance measuring calculation unit 1307, an object recognition unit 1308, and an abnormality detection unit 1309. The image processing unit 1304 performs image processing such as development processing and defect correction on the output signal of the image pre-processing unit 1315. The memory 1305 temporarily stores the captured image and stores the defective positions of the captured pixels. The optical distance measuring unit 1306 performs focusing and distance measurement of the subject. The distance measuring calculation unit 1307 calculates distance measurement information from multiple image data acquired by multiple photoelectric conversion devices 1302. The object recognition unit 1308 recognizes subjects such as cars, roads, signs, and people. When the abnormality detection unit 1309 detects an abnormality in the photoelectric conversion device 1302, it notifies the main control unit 1313 of the abnormality.

[0065] The integrated circuit 1303 may be realized by dedicated hardware, a software module, or a combination of these. It may also be realized by a field programmable gate array (FPGA), an application specific integrated circuit (ASIC), or the like, or a combination of these.

[0066] The main control unit 1313 supervises and controls the operations of the photoelectric conversion system 1301, the vehicle sensor 1310, the control unit 1320, etc. It is also possible to adopt a method in which the main control unit 1313 is not provided, and the photoelectric conversion system 1301, the vehicle sensor 1310, and the control unit 1320 each have their own communication interface and transmit and receive control signals via a communication network (for example, CAN standard).

[0067] The integrated circuit 1303 has a function of receiving a control signal from the main control unit 1313 or transmitting a control signal or a set value to the photoelectric conversion device 1302 by its own control unit.

[0068] The photoelectric conversion system 1301 is connected to a vehicle sensor 1310, and can detect the vehicle's driving state, such as vehicle speed, yaw rate, and steering angle, as well as the state of the environment outside the vehicle, other vehicles, and obstacles. The vehicle sensor 1310 is also a distance information acquisition means for acquiring distance information to an object. The photoelectric conversion system 1301 is also connected to a driving assistance control unit 1311 that performs various driving assistance functions, such as automatic steering, automatic cruising, and collision prevention functions. In particular, the collision determination function determines whether or not a collision with another vehicle or obstacle has occurred based on the detection results of the photoelectric conversion system 1301 and the vehicle sensor 1310. This allows for avoidance control when a collision is estimated, and activation of a safety device in the event of a collision.

[0069] The photoelectric conversion system 1301 is also connected to an alarm device 1312 that issues an alarm to the driver based on the result of the determination by the collision determination unit. For example, if the collision determination unit determines that there is a high possibility of a collision, the main control unit 1313 performs vehicle control to avoid a collision and reduce damage by applying the brakes, releasing the accelerator, suppressing engine output, etc. The alarm device 1312 warns the user by sounding an alarm, displaying alarm information on a display screen such as a car navigation system or a meter panel, vibrating a seat belt or steering wheel, etc. [Explanation of symbols]

[0070] 10: pixel array, 11: pixel, 31: amplifier, 41: ΔΣ AD converter

Claims

1. a pixel array having a plurality of pixels; a capacitively coupled amplifier that amplifies a signal output from the pixel array; a ΔΣ AD converter for converting an analog signal output from the amplifier into a digital signal; the amplifier is composed of a plurality of first elements including active elements and capacitive elements; the ΔΣ AD converter is composed of a plurality of second elements including active elements and capacitive elements, a withstand voltage of at least one second element among the plurality of second elements constituting the ΔΣ AD converter is lower than a withstand voltage of the plurality of first elements constituting the amplifier; a breakdown voltage of the at least one second element is lower than a breakdown voltage of a second element different from the at least one second element among the plurality of second elements; A photoelectric conversion device comprising:

2. a maximum voltage applied to the at least one second element is less than a maximum voltage applied to the plurality of first elements; 2. The photoelectric conversion device according to claim 1.

3. the at least one second element of the ΔΣ AD converter has a gate oxide film thinner than a gate oxide film of at least one first element among the plurality of first elements constituting the amplifier; 3. The photoelectric conversion device according to claim 1 or 2.

4. At least one first element of the plurality of first elements constituting the amplifier includes a diffusion capacitance, and the at least one second element constituting the ΔΣ AD converter includes at least one of a MIM capacitance and a MOM capacitance.

3. The photoelectric conversion device according to claim 1 or 2.

5. At least one first element of the plurality of first elements constituting the amplifier includes a diffusion capacitance, and the at least one second element constituting the ΔΣ AD converter is configured with an opposing pattern, and the pattern includes a metal pattern or a metallized pattern.

3. The photoelectric conversion device according to claim 1 or 2.

6. The ΔΣ AD converter includes a subtractor, an integrator, a quantizer, a DA converter, and a decimation filter.

6. The photoelectric conversion device according to claim 1,

7. a breakdown voltage of at least a second element constituting the decimation filter among the plurality of second elements is lower than a breakdown voltage of the plurality of first elements constituting the amplifier; 7. The photoelectric conversion device according to claim 6.

8. a breakdown voltage of at least one of the second elements constituting the quantizer is lower than a breakdown voltage of the first elements constituting the amplifier; 8. The photoelectric conversion device according to claim 6 or 7.

9. a withstand voltage of at least a second element constituting the integrator among the plurality of second elements is lower than a withstand voltage of the plurality of first elements constituting the amplifier; 9. The photoelectric conversion device according to claim 6, wherein the first and second electrodes are arranged in a first direction.

10. a withstand voltage of at least one of the second elements constituting the DA converter is lower than a withstand voltage of the first elements constituting the amplifier; 10. The photoelectric conversion device according to claim 6, wherein the first and second electrodes are arranged in a first direction.

11. a withstand voltage of at least one of the second elements constituting the subtractor is lower than a withstand voltage of the first elements constituting the amplifier; 11. The photoelectric conversion device according to claim 6,

12. A breakdown voltage of a second element among the plurality of second elements constituting the decimation filter is lower than a breakdown voltage of a second element among the plurality of second elements constituting the subtractor.

11. The photoelectric conversion device according to claim 6,

13. The integrator is a voltage integration type integrator.

13. The photoelectric conversion device according to claim 6, wherein the first and second electrodes are arranged in a first direction.

14. The integrator is a current integration type integrator.

13. The photoelectric conversion device according to claim 6, wherein the first and second electrodes are arranged in a first direction.

15. the ΔΣ AD converter includes a first integrator that integrates a current supplied to an input node of the ΔΣ AD converter, a voltage-to-current converter that converts a voltage of the input node into a current, a second integrator that integrates a current supplied to an intermediate node connected to an output of the voltage-to-current converter, a quantizer that quantizes the voltage of the intermediate node, a first DA converter that extracts a predetermined current from the input node in response to an output of the quantizer, a second DA converter that extracts a predetermined current from the intermediate node in response to the output of the quantizer, and a decimation filter that receives the output of the quantizer.

6. The photoelectric conversion device according to claim 1,

16. a breakdown voltage of at least a second element constituting the decimation filter among the plurality of second elements is lower than a breakdown voltage of the plurality of first elements constituting the amplifier; 16. The photoelectric conversion device according to claim 15.

17. a breakdown voltage of at least one of the second elements constituting the quantizer is lower than a breakdown voltage of the first elements constituting the amplifier; 17. The photoelectric conversion device according to claim 15 or 16.

18. a withstand voltage of at least the second elements constituting the first integrator and the second integrator among the plurality of second elements is lower than a withstand voltage of the plurality of first elements constituting the amplifier; 18. The photoelectric conversion device according to claim 15,

19. a withstand voltage of at least the second elements constituting the first DA converter and the second DA converter among the plurality of second elements is lower than a withstand voltage of the plurality of first elements constituting the amplifier; 19. The photoelectric conversion device according to claim 15,

20. a clipping circuit for clipping the output of the amplifier; 20. The photoelectric conversion device according to claim 1,

21. A breakdown voltage of the second element different from the at least one second element among the plurality of second elements is equal to a breakdown voltage of the plurality of first elements.

21. The photoelectric conversion device according to claim 1,

22. the plurality of first elements of the amplifier include a first element constituting an amplifier circuit, and a first capacitive element disposed between an input node of the amplifier and an input node of the amplifier circuit, the plurality of second elements of the ΔΣ AD converter include a second capacitive element that is charged by a current supplied to an input node of the ΔΣ AD converter, a capacitance value of the second capacitance element is smaller than a capacitance value of the first capacitance element; 22. The photoelectric conversion device according to claim 1,

23. a sum of capacitance values ​​of capacitive elements among the plurality of second elements of the ΔΣ AD converter is smaller than a sum of capacitance values ​​of capacitive elements among the plurality of first elements of the amplifier; 22. The photoelectric conversion device according to claim 1,

24. the minimum value of the capacitance values ​​of all the capacitance elements included in the ΔΣ AD converter is smaller than the minimum value of the capacitance values ​​of all the capacitance elements included in the amplifier; 22. The photoelectric conversion device according to claim 1,

25. The photoelectric conversion device according to any one of claims 1 to 24, a signal processing unit that processes a signal output from the photoelectric conversion device; A photoelectric conversion system comprising:

26. The photoelectric conversion device according to any one of claims 1 to 24, a signal processing unit that processes a signal output from the photoelectric conversion device; A moving object comprising:

27. a capacitively coupled amplifier that amplifies a signal output from a pixel array having a plurality of pixels; A ΔΣ AD converter that converts an analog signal output from the amplifier into a digital signal, the amplifier is composed of a plurality of first elements including active elements and capacitive elements; the ΔΣ AD converter is composed of a plurality of second elements including active elements and capacitive elements, a withstand voltage of at least one second element among the plurality of second elements constituting the ΔΣ AD converter is lower than a withstand voltage of the plurality of first elements constituting the amplifier; a breakdown voltage of the at least one second element is lower than a breakdown voltage of a second element different from the at least one second element among the plurality of second elements; A semiconductor substrate comprising:

Images