Semiconductor device, its manufacturing method and substrate

Abstract

To provide a semiconductor device with improved high frequency characteristics, a manufacturing method thereof, and a substrate.SOLUTION: A semiconductor device includes: an insulating member; a light receiving element mounted on the insulating member; a light emitting element optically coupled to the light receiving element; a first metal terminal provided on a back surface of the insulating member and electrically connected to the light emitting element; a switching element mounted on the insulating member via a metal pad; and a second metal terminal provided on the back surface of the insulating member. The output of the light receiving element is electrically connected to the control electrode of the switching element. The second metal terminal is electrically connected to the metal pad. The insulating member has a first thickness, the metal pad has a second thickness, and the second metal terminal has a third thickness, in a first direction from the back surface to a front surface. The first thickness is thinner than the sum of the second thickness and the third thickness.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The embodiments relate to a semiconductor device, a manufacturing method thereof, and a substrate. [Background technology]

[0002] Semiconductor devices that transmit high-frequency signals are required to have improved frequency characteristics. For example, in a photorelay that includes an optically coupled light-emitting element and a light-receiving element, it is desirable to reduce the impedance between output terminals and improve the high-frequency passing characteristics. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2001-210755 A Summary of the Invention [Problem to be solved by the invention]

[0004] The embodiments provide a semiconductor device with improved high frequency characteristics, a manufacturing method thereof, and a substrate. [Means for solving the problem]

[0005] The semiconductor device according to the embodiment includes an insulating member, a light receiving element mounted on a front surface of the insulating member, a light emitting element mounted on the light receiving element and optically coupled to the light receiving element, a first metal terminal provided on a back surface opposite to the front surface of the insulating member and electrically connected to the light emitting element, a switching element mounted on the front surface of the insulating member via a metal pad, and a second metal terminal provided on the back surface of the insulating member. The switching element and the light receiving element are arranged on the front surface of the insulating member. An output of the light receiving element is electrically connected to a control electrode of the switching element. The second metal terminal is electrically connected to the switching element via the metal pad. The insulating member has a first thickness in a first direction from the back surface to the front surface, the metal pad has a second thickness in the first direction, and the second metal terminal has a third thickness in the first direction. The first thickness is thinner than a total thickness of the second thickness and the third thickness.

[0006] A substrate used in the manufacture of the semiconductor device has a first region including a plurality of the first metal terminals, a plurality of the second metal terminals, and a plurality of the metal pads, and a second region surrounding the first region, and is equipped with a sheet-like insulating member having the first thickness in the first direction, and at least one resin layer provided on the second region of the sheet-like insulating member and having a thickness in the first direction that is thicker than the first thickness. [Brief description of the drawings]

[0007] [Figure 1] 1 is a schematic cross-sectional view showing a semiconductor device according to an embodiment; [Diagram 2] 1 is a circuit diagram showing a configuration of a semiconductor device according to an embodiment; [Diagram 3] 1A to 1C are schematic diagrams illustrating components of a semiconductor device according to an embodiment. [Figure 4] FIG. 4 is another schematic diagram showing the substrate according to the embodiment. [Diagram 5] 1A to 1C are schematic diagrams illustrating a manufacturing process of a semiconductor device according to an embodiment. [Figure 6]FIG. 6 is a schematic diagram showing the manufacturing process following FIG. 5. [Figure 7] FIG. 13 is a schematic diagram showing a substrate according to a modified example of the embodiment. [Figure 8] FIG. 13 is a schematic diagram showing a substrate according to another modified example of the embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, the embodiments will be described with reference to the drawings. The same parts in the drawings are given the same numbers, and detailed descriptions thereof will be omitted as appropriate, and different parts will be described. Note that the drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as the actual ones. Even when the same parts are shown, the dimensions and ratios of each part may be different depending on the drawing.

[0009] Furthermore, the arrangement and configuration of each part will be explained using the X-axis, Y-axis, and Z-axis shown in each figure. The X-axis, Y-axis, and Z-axis are mutually perpendicular and represent the X-direction, Y-direction, and Z-direction, respectively. In addition, the Z-direction may be described as upward and the opposite direction as downward.

[0010] 1 and 2 are schematic diagrams illustrating a semiconductor device 1 according to an embodiment. Fig. 1 is a schematic cross-sectional view showing a semiconductor device 1 according to an embodiment of the present invention, Fig. 2 is a circuit diagram showing a configuration of the semiconductor device 1 according to the embodiment.

[0011] The semiconductor device 1 is, for example, a photorelay, and includes an insulating member 10, a light receiving element 20, a light emitting element 30, a switching element 40a, and a switching element 40b.

[0012] The insulating member 10 is, for example, an insulating resin sheet. The insulating member 10 includes, for example, polyimide. The thickness of the insulating member 10 in the direction from the back surface to the front surface (Z direction) is, for example, 50 micrometers (μm).

[0013] For example, bonding pads 13a, 13b and mounting pads 15a, 15b and 17 are provided on the surface of the insulating member 10. The bonding pads 13a, 13b and mounting pads 15a, 15b and 17 are metal layers containing, for example, copper. The thickness in the Z direction of each of the bonding pads 13a, 13b and mounting pads 15a, 15b and 17 is, for example, 30 μm.

[0014] The bonding pads 13a and 13b are aligned, for example, in the Y direction. The mounting pads 15a and 15b are aligned, for example, in the Y direction.

[0015] The bonding pad 13a and the mounting pad 15a are aligned, for example, in the X direction. The bonding pad 13b and the mounting pad 15b are aligned, for example, in the X direction.

[0016] The mounting pad 17 is provided, for example, between the bonding pad 13a and the mounting pad 15a, and between the bonding pad 13b and the mounting pad 15b.

[0017] The control side terminals 50a and 50b and the output side terminals 60a and 60b are provided on the back surface of the insulating member 10 (see FIG. 3(c)). The control side terminals 50a, 50b and the output side terminals 60a and 60b are, for example, metal layers containing copper. The thickness in the Z direction of each of the control side terminals 50a, 50b and the output side terminals 60a and 60b is, for example, 30 μm.

[0018] The control side terminal 50a is provided to face the bonding pad 13a via the insulating member 10. The control side terminal 50a is electrically connected to the bonding pad 13a via a via contact 53 provided in the insulating member 10. The via contact 53 includes, for example, the same material as the control side terminal 50a. The via contact 53 includes, for example, copper. Other via contacts are provided in a similar manner.

[0019] The control side terminal 50b is provided to face the bonding pad 13b via the insulating member 10. The control side terminal 50b is also electrically connected to the bonding pad 13b via a via contact (not shown).

[0020] The output terminal 60a is provided to face the mount pad 15a via the insulating member 10. The output terminal 60a is electrically connected to the mount pad 15a via a via contact 63 provided in the insulating member 10. The output terminal 60a is electrically connected to the mount pad 15a via a plurality of via contacts 63, for example.

[0021] The output terminal 60b is provided to face the mount pad 15b via the insulating member 10. The output terminal 60b is also electrically connected to the mount pad 15b via a via contact (not shown).

[0022] The light receiving element 20 is mounted on the mounting pad 17 via a connecting member 23. The connecting member 23 is, for example, a solder material or a conductive paste. The light emitting element 30 is mounted on the light receiving element 20 via, for example, a light-transmitting connecting member 35 (see FIG. 5(b)), and is optically coupled to the light receiving element 20. The light receiving element 20 includes, for example, a silicon photodiode. The light emitting element 30 is, for example, a light emitting diode (LED).

[0023] The switching elements 40a and 40b are mounted on the mounting pads 15a and 15b, respectively, via a connecting member 43. The connecting member 43 is, for example, a solder material or a conductive paste.

[0024] The switching elements 40a and 40b are, for example, vertical MOSFETs having a drain on the back side and a source on the front side. The switching elements 40a and 40b are mounted on the mount pads 15a and 15b, respectively, with their back sides facing each other. The switching element 40a is electrically connected to the output terminal 60a via the mount pad 15a and a via contact 63. The switching element 40b is electrically connected to the output terminal 60b via the mount pad 15b and a via contact (not shown).

[0025] 1, the light receiving element 20 is electrically connected to the switching elements 40a and 40b via a metal wire (see FIG. 2). The switching elements 40a and 40b are electrically connected to each other via another metal wire (see FIG. 2).

[0026] The light-emitting element 30 is electrically connected to the bonding pads 13a and 13b via yet another metal wire (see FIG. 2). The light-emitting element 30 is electrically connected to the control-side terminal 50a via the bonding pad 13a and a via contact 53. The light-emitting element 30 is also electrically connected to the control-side terminal 50b via the bonding pad 13b and a via contact (not shown).

[0027] As shown in FIG. 1, a resin member 70 is provided on the front surface side of the insulating member 10. The resin member 70 is, for example, an epoxy resin. The resin member 70 has, for example, non-translucency. The resin member 70 seals the light receiving element 20, the light emitting element 30, the switching elements 40a, 40b, and each metal wire on the insulating member 10. The light emitting element 30 is sealed on the light receiving element 20 by the resin member 33. The resin member 70 is provided so as to cover the resin member 33. The resin member 33 is, for example, silicone.

[0028] Thus, the semiconductor device 1 has a structure in which the light receiving element 20, the light emitting element 30, and the switching elements 40a and 40b are sealed in a resin package, and the control side terminal 50 and the output side terminal 60 are provided on the outer surface of the resin package.

[0029] In the semiconductor device 1, the resin member 70 is provided so as to be in contact with the insulating member 10 between the pads and at the outer edge of the insulating member 10. This improves the adhesion between the insulating member 10 and the resin member 70, and improves the reliability of the light receiving element 20, the light emitting element 30, and the switching elements 40a and 40b sealed by the resin member 70. In addition, it is possible to configure the resin package so that metals other than the control terminal 50 and the output terminal 60 are not exposed on the outer surface of the resin package, and for example, in mounting using a connecting member such as cream solder, it is possible to prevent the intrusion of the connecting member into the resin package due to capillary action and the creeping up of the solder material.

[0030] 2, the light receiving element 20 includes a plurality of photodiodes 25 and a control circuit 27. The plurality of photodiodes 25 are connected in series. The photodiodes 25 are configured to detect light from the light emitting element 30. The control circuit 27 is, for example, a waveform shaping circuit. The control circuit 27 may also be a discharge circuit, a protection circuit, or the like. The output of the photodiodes 25 is output via the control circuit 27.

[0031] The source S of the switching element 40a is connected to the source S of the switching element 40b. The cathode output of the photodiode 25 is connected to, for example, the sources S of the switching elements 40a and 40b via the control circuit 27. In addition, the anode output of the photodiode 25 is connected to, for example, the gates G of the switching elements 40a and 40b via the control circuit 27. The output terminal 60a is connected to the drain D of the switching element 40a, and the output terminal 60b is connected to the drain D of the switching element 40b.

[0032] For example, a control signal for controlling on / off of electrical continuity between output terminals 60a and 60b is input to control terminals 50a and 50b. Light-emitting element 30 emits an optical signal corresponding to the control signal, and light-receiving element 20 detects the optical signal emitted from light-emitting element 30 and outputs a control signal corresponding to the optical signal to switching elements 40a and 40b.

[0033] For example, when the semiconductor device 1 controls the on / off of a transmission path of a high-frequency signal, it is desirable to improve the passing characteristics of the high-frequency signal between the output terminal 60a and the output terminal 60b. In the semiconductor device 1, by reducing the thickness of the insulating member 10 in the Z direction, it is possible to reduce the impedance between the switching element 40a and the output terminal 60a and to reduce the impedance between the switching element 40b and the output terminal 60b. This makes it possible to improve the passing characteristics of the high-frequency signal between the output terminal 60a and the output terminal 60b.

[0034] 3(a) to 3(c) are schematic diagrams showing a base member 5 of the semiconductor device 1 according to the embodiment. The light receiving element 20, the light emitting element 30, and the switching elements 40a and 40b (see FIG. 1) are mounted on the front surface side of the base member 5.

[0035] 3(a) is a plan view showing the bonding pads 13a, 13b and the mounting pads 15a, 15b and 17 on the front surface side of the insulating member 10. The bonding pads 13a and 13b and the mounting pads 15a, 15b and 17 are formed, for example, by patterning copper foil provided on the front surface of the insulating member 10. The bonding pads 13a and 13b and the mounting pads 15a, 15b and 17 may have a laminated structure in which a gold (Au) layer is provided on the surface to prevent oxidation, for example.

[0036] The bonding pads 13a and 13b are aligned in the Y direction. The mounting pads 15a and 15b are aligned in the Y direction. The mounting pad 17 is provided between the bonding pad 13a and the mounting pad 15a, and between the bonding pad 13b and the mounting pad 15b. Note that the embodiment is not limited to this arrangement.

[0037] Fig. 3(b) is a cross-sectional view taken along line AA in Fig. 3(a). Insulating member 10 has, for example, a thickness T1 in the Z direction. Bonding pads 13a, 13b and mounting pads 15a, 15b and 17 each have a thickness T2 in the Z direction. In addition, control terminals 50a, 50b and output terminals 60a, 60b provided on the back surface of insulating member 10 each have a thickness T3 in the Z direction.

[0038] Via contacts 53 and 63 are provided in insulating member 10. Via contacts 53 and 63 are provided, for example, in via holes that communicate from the back surface side to the front surface side of insulating member 10. Via contacts 53 and 63 are formed, for example, by filling the via holes with a metal such as copper using a plating method.

[0039] The control terminal 50a is electrically connected to the bonding pad 13a by a via contact 53. The output terminal 60a is electrically connected to the mounting pad 15a by a via contact 63. Similarly, the control terminal 50b and the output terminal 60b are electrically connected to the bonding pad 13b and the mounting pad 15b through via contacts.

[0040] 3(c) is a plan view showing the control side terminals 50a, 50b and the output side terminals 60a and 60b provided on the back side of the insulating member 10. The control side terminals 50a, 50b and the output side terminals 60a and 60b are formed, for example, by patterning copper foil provided on the back side of the insulating member 10. The control terminals 50b and the output side terminal 60b have the same thickness T3 in the Z direction as the control terminal 50a and the output side terminal 60a. The control side terminals 50a, 50b and the output side terminals 60a and 60b may have a laminated structure in which a gold (Au) layer is provided on the surface to prevent oxidation, for example.

[0041] The control side terminals 50a and 50b are lined up, for example, in the Y direction. The output side terminals 60a and 60b are lined up, for example, in the Y direction. The control side terminal 50a and the output side terminal 60a are lined up, for example, in the X direction. The control side terminal 50b and the output side terminal 60b are lined up, for example, in the X direction.

[0042] The control side terminal 50a is provided to face the bonding pad 13a with the insulating member 10 interposed therebetween. The control side terminal 50b is provided to face the bonding pad 13b with the insulating member 10 interposed therebetween.

[0043] The output terminal 60a is provided to face the mount pad 15a with the insulating member 10 interposed therebetween. The output terminal 60b is provided to face the mount pad 15b with the insulating member 10 interposed therebetween.

[0044] It is preferable that the thickness T1 of the insulating member 10 is thin so that, for example, the impedance between the switching element 40a and the output terminal 60a and the impedance between the switching element 40b and the output terminal 60b are small.

[0045] The bonding pads 13a and 13b are provided with a thickness that ensures the bonding strength of the metal wire (see FIG. 1), for example. Therefore, it is preferable that the thickness T2 in the Z direction of the bonding pads 13a and 13b provided on the front surface side of the insulating member 10 is set to be thicker than a predetermined thickness that ensures the bonding strength.

[0046] It is preferable that the thickness T3 of each of the control side terminals 50a, 50b and the output side terminals 60a and 60b provided on the back surface side of the insulating member 10 is the same as the thickness T2 of the bonding pads 13a, 13b and the mounting pads 15a, 15b and 17, for example, in order to balance the stress applied to the insulating member 10. Here, "the same" does not only mean a strict match, but also includes being approximately the same or substantially the same.

[0047] On the other hand, if the thickness T2 of the bonding pads 13a, 13b, the mounting pads 15a, 15b, and 17, and the thickness T3 of the control side terminals 50a, 50b, and the output side terminals 60a and 60b are made too thick, it becomes difficult to cut the laminated structure including the insulating member 10 and the metal layers (see Figure 4(b)) provided on its front and back surfaces.

[0048] As a result, it is preferable that the thickness T1 of the insulating member 10 is smaller than the combined thickness (T2+T3) of each of the bonding pads 13a, 13b, the mounting pads 15a, 15b, and 17, and the thickness T3 of each of the control-side terminals 50a, 50b, and the output-side terminals 60a and 60b. This can reduce the impedance between the switching element 40a and the output-side terminal 60a, and between the switching element 40b and the output-side terminal 60b.

[0049] Furthermore, from the viewpoint of cutting the laminated structure, it is preferable that the thicknesses T2 and T3 are each thinner than the thickness T1 of the insulating member 10. The metal layers formed on the front and back surfaces of the insulating member 10 are formed, for example, simultaneously, and the thicknesses T2 and T3 are the same. The thickness T1 of the insulating member 10 is, for example, 50 μm. The thicknesses T2 and T3 are, for example, 30 μm each.

[0050] 4(a) and (b) are other schematic diagrams showing the substrate 100 used in the manufacture of the semiconductor device 1 according to the embodiment. Fig. 4(a) is a plan view showing the entire substrate 100. Fig. 4(b) is a cross-sectional view taken along line BB shown in Fig. 4(a).

[0051] 4(a), the substrate 100 includes a first region 1R and a second region 2R. The second region 2R surrounds the first region 1R.

[0052] The first region 1R includes a plurality of bonding pads 13a, a plurality of bonding pads 13b, a plurality of mounting pads 15a, a plurality of mounting pads 15b, and a plurality of mounting pads 17. The first region 1R also includes a plurality of control side terminals 50a, a plurality of control side terminals 50b, a plurality of output side terminals 60a, and a plurality of output side terminals 60b provided on the rear surface side (not shown).

[0053] The bonding pads 13a, 13b, and the mounting pads 15a, 15b, and 17 are arranged in the X and Y directions, respectively, while maintaining the arrangement shown in Fig. 3(a), for example. The control side terminals 50a, 50b, and the output side terminals 60a and 60b are arranged in the X and Y directions, respectively, while maintaining the arrangement shown in Fig. 3(b), for example.

[0054] The second region 2R includes, for example, a metal layer 115 and a resin layer 120. The metal layer 115 is left so as to surround the first region 1R, for example, in the process of forming the bonding pads 13a, 13b and the mounting pads 15a, 15b, and 17. The resin layer 120 is provided on the metal layer 115 so as to surround the first region 1R. The metal layer 115 is, for example, a copper foil. The resin layer 120 includes, for example, a polyimide. The metal layer 115 may have a laminated structure in which, for example, a gold (Au) layer is formed on the surface of a copper foil.

[0055] The metal layer 115 includes an exposed region between the first region 1R and the resin layer 120. The metal layer 115 includes a plurality of slits SL provided so as to surround the first region 1R. The slits SL are provided so as to extend along the outer edge of the first region 1R in the exposed region of the metal layer 115. The slits SL are provided, for example, so as to be located on a line surrounding the first region 1R (see FIG. 6(a)). The slits SL may also be provided, for example, so as to be connected at each of the four corners of the rectangular first region 1R so as to surround each corner.

[0056] As shown in FIG. 4(b), the substrate 100 includes a sheet-like insulating member 110. The base member 5 is provided by cutting the first region 1R of the substrate 100. The insulating member 10 is provided by dividing the insulating member 110. The insulating member 110 includes polyimide. The metal layer 115 includes a region located between the insulating member 110 and the resin layer 120. The metal layer 115 has a thickness T2 in the Z direction. The slit SL is provided so as to communicate from the surface of the metal layer 115 to the insulating member 110.

[0057] A metal layer 117 and a resin layer 130 are provided on the back surface side of the insulating member 110. The metal layer 117 is provided in the second region 2R and surrounds the first region 1R. The control side terminals 50a, 50b and the output side terminals 60a and 60b are provided by patterning the metal layer 117. The resin layer 130 is provided on the metal layer 117. The metal layer 117 includes a region located between the insulating member 110 and the resin layer 130. The metal layer 117 has a thickness T3 in the Z direction. The metal layer 117 is, for example, a copper foil. The metal layer 117 may have a laminated structure in which a gold (Au) layer is formed on a copper foil, for example.

[0058] The metal layer 117 has an exposed region between the first region 1R and the resin layer 130. The slits SL are also provided in the exposed region of the metal layer 117. The slits SL provided on the back surface side of the insulating member 110 are provided at positions facing the slits SL provided on the front surface side with the insulating member 110 in between.

[0059] The resin layer 120 and the resin layer 130 are provided to suppress warping and deformation of the substrate 100 due to heat, for example, when mounting the light receiving element 20 and the switching elements 40a, 40b and when bonding metal wires. Furthermore, by suppressing warping and deformation of the substrate 100, the positional accuracy during transportation can be improved.

[0060] The resin layer 120 has a thickness TR1 in the Z direction, and the resin layer 130 has a thickness TR2 in the Z direction. The thickness TR1 of the resin layer 120 and the thickness TR2 of the resin layer 130 are, for example, thicker than the thickness T1 of the insulating member 110. The thickness TR1 of the resin layer 120 and the thickness TR2 of the resin layer 130 are, for example, 150 μm each.

[0061] The resin layer 120 and the resin layer 130 do not necessarily have the same thickness, but have thicknesses TR1 and TR2 adjusted to suppress warping of the substrate 100. For example, one of TR1 and TR2 may be 0 μm. In other words, the substrate 100 may have a configuration in which either the resin layer 120 or the resin layer 130 is provided.

[0062] Next, a method for manufacturing the semiconductor device 1 will be described with reference to Figures 5(a) to 6(b). Figures 5(a) to 6(b) are schematic diagrams showing the manufacturing process of the semiconductor device 1 according to the embodiment.

[0063] 5(a), the switching element 40a and the light receiving element 20 are mounted on the mounting pads 15a and 17, respectively, which are provided on the insulating member 110. The switching element 40a and the light receiving element 20 are placed on the mounting pads 15a and 17, for example, via cream solder or conductive paste, and fixed by reflow or curing. The switching element 40b is mounted on the mounting pad 15b in a portion not shown.

[0064] 5(b), the light-emitting element 30 is mounted on the light-receiving element 20. The light-emitting element 30 is joined to the light-receiving element 20 via, for example, a connection member 35. The light-emitting element 30 emits light toward the light-receiving element 20 from its back surface facing the light-receiving element 20. The connection member 35 is, for example, a transparent resin layer that transmits light emitted by the light-emitting element 30.

[0065] As shown in Fig. 5(c), the bonding pad 13a and the light-emitting element 30 are electrically connected by a metal wire MW1 (see Fig. 2). The light-receiving element 20 and the switching element 40a are electrically connected by metal wires MW2 and MW3 (see Fig. 2). The metal wires MW1, MW2, and MW3 are connected onto the electrodes of each element by, for example, ultrasonic bonding.

[0066] In portions not shown, electrical connections are also made via metal wires between bonding pad 13b and light emitting element 30, between light receiving element 20 and switching element 40b, and between switching element 40a and switching element 40b.

[0067] The light emitting element 30 is sealed on the light receiving element 20 by a resin member 33. The resin member 33 is formed by, for example, potting.

[0068] If the warping of the substrate 100 becomes too great when automatically bonding metal wires to the electrodes of each element, the image recognition function of the camera may be degraded, causing problems such as making bonding impossible. For example, if the warping of the insulating member becomes greater than the focal depth within the camera's angle of view, the accuracy of image recognition may decrease. In the substrate 100 according to the embodiment, the resin layers 120 and 130 (see FIG. 4(b)) suppress the warping, making it possible to avoid such problems.

[0069] 5(d), a resin member 70 is molded on the front surface side of the insulating member 110. The resin member 70 is formed so as to be in close contact with the insulating member 110 and to seal the light receiving element 20, the light emitting element 30, the switching elements 40a and 40b, and the metal wires MW1 to MW3.

[0070] 6(a), the resin member 70 is formed on the front surface side of the substrate 100. The resin member 70 is formed so as to cover the first region 1R of the substrate 100. The resin member 70 is formed by using, for example, vacuum molding.

[0071] 6(b), the substrate 100 is cut to remove the second region 2R while leaving the first region 1R in which the resin member 70 is molded. The substrate 100 is cut along a separation line CL that runs along the slit SL.

[0072] Next, the first region 1R and the resin member 70 of the substrate 100 are cut, for example, in the X direction and the Y direction, to separate the semiconductor devices 1. The substrate 100 and the resin member are cut, for example, using a dicer. In the substrate 100 according to the embodiment, no metal member is provided between adjacent semiconductor devices 1 on the first region 1R, so that the substrate 100 is easily separated into individual semiconductor devices 1. In addition, no metal burrs or the like are left on the cut surfaces of the separated resin packages.

[0073] 7(a) and (b) are schematic diagrams showing substrates 200 and 300 according to modified examples of the embodiment.

[0074] The substrate 200 shown in Fig. 7(a) has a plurality of first regions 1R. The resin layer 120 is provided in the second region 2R so as to surround the plurality of first regions 1R. The metal layer 115 includes a region extending between adjacent first regions 1R. Similarly, the metal layer 117 (see Fig. 4(b)) provided on the back surface side of the resin member 110 may also include a region extending between adjacent first regions 1R.

[0075] In this example, the bending of the first region 1R can be suppressed by the region extending between the first regions 1R of the metal layer 115. For example, this is effective in the case where the area of ​​the first region 1R is enlarged and the number of first semiconductor devices 1 provided in the first region 1R is increased.

[0076] 7(b), a plurality of resin layers 120 are provided in the second region 2R. The first region 1R is surrounded by the resin layers 120a to 120d. Parts of the metal layer 115 are exposed in the space between the resin layer 120a and the resin layer 120b, the space between the resin layer 120b and the resin layer 120c, the space between the resin layer 120c and the resin layer 120d, and the space between the resin layer 120d and the resin layer 120a.

[0077] Such a configuration of the resin layer 120 may be more effective in suppressing warping of the substrate 300. Also, on the back surface side of the substrate 300, a plurality of resin layers 130 may be provided.

[0078] Figures 8(a) and (b) are schematic diagrams showing a substrate 400 according to another modified example of the embodiment. Figure 8(a) is a plan view showing the entire substrate 400. Figure 8(b) is a cross-sectional view taken along line CC shown in Figure 8(a).

[0079] 8(a) and 8(b), in the substrate 400, the metal layers 115 and 117 are not provided in the second region 2R. The resin layer 120 and the resin layer 130 are each provided directly on the insulating member 110. Note that an adhesive may be interposed between the resin layer 120 and the resin layer 130 and the insulating member 110.

[0080] In this example, there are no metal layers 115 and 117 between the resin member 70 (see FIG. 6(a)) and the resin layer 120, and the insulating member 110 is exposed. This makes it easy to cut between the resin member 70 and the resin layer 120 and separate the substrate 400 while leaving the portion where the resin member 70 in the first region 1R is molded.

[0081] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims. [Explanation of symbols]

[0082] REFERENCE SIGNS LIST 1...semiconductor device, 1R...first region, 2R...second region, 5...base member, 10, 110...insulating member, 13a, 13b...bonding pad, 15a, 15b, 17...mounting pad, 20...light receiving element, 23, 43...connecting member, 25...photodiode, 27...control circuit, 30...light emitting element, 33, 70...resin member, 35...connecting member, 40a, 40b...switching element, 50a, 50b...control side terminal, 53, 63...via contact, 60a, 60b output side terminal, 100, 200, 300, 400...substrate, 115, 117...metal layer, 120, 120a to 120d, 130...resin layer, CL...separating line, MW1, MW2, MW3...metal wire, SL...slit

Claims

1. A substrate used in the manufacture of a semiconductor device, a sheet-like insulating member having a first region including a plurality of first metal terminals, a plurality of second metal terminals, and a plurality of metal pads, and a second region surrounding the first region, the sheet-like insulating member having a first thickness in a first direction from a back surface to a front surface opposite to the back surface; at least one resin layer provided on the second region of the sheet-like insulating member and having a thickness in the first direction that is greater than the first thickness; Another resin layer provided in the second region on the back surface of the sheet-like insulating member; Equipped with the resin layer is provided on the surface of the sheet-like insulating member, the second region includes a portion located between the resin layer and the another resin layer, The semiconductor device includes: The insulating member; a light receiving element mounted on the surface of the insulating member; a light emitting element mounted on the light receiving element and optically coupled to the light receiving element; the first metal terminal provided on the back surface of the insulating member and electrically connected to the light emitting element; a switching element mounted on the surface of the insulating member via the metal pad and arranged alongside the light receiving element, the output of the light receiving element being electrically connected to a control electrode of the switching element; a second metal terminal provided on the back surface of the insulating member and electrically connected to the switching element via the metal pad; Equipped with the metal pad has a second thickness in the first direction; the second metal terminal has a third thickness in the first direction; The first thickness is less than 60 μm and is thinner than a combination of the second thickness and the third thickness.

2. Further comprising a first metal layer, at least a portion of which is provided between the sheet-like insulating member and the resin layer, and a second metal layer, at least a portion of which is provided between the sheet-like insulating member and the other resin layer, the first metal layer has the second thickness in the first direction; The substrate of claim 1 , wherein the second metal layer has the third thickness in the first direction.

3. The substrate according to claim 2 , wherein the first metal layer has an area that is not covered by the resin layer, and the first metal layer has a first slit in the uncovered area that communicates from a surface of the first metal layer to the sheet-like insulating member.

4. The substrate of claim 3, wherein the second metal layer has an area that is not covered by the other resin layer, and in the uncovered area, the second metal layer has a surface that connects to the sheet-like insulating member, and a second slit at a position opposite the first slit across the sheet-like insulating member.

5. 5. The substrate according to claim 1, wherein the thickness of the resin layer in the first direction is the same as the thickness of the other resin layer in the first direction.

6. 6. The substrate according to claim 1, wherein the sheet-like insulating member includes a plurality of the first regions, and the second region surrounds the plurality of first regions.

7. A plurality of the resin layers are provided, The substrate according to any one of claims 1 to 6, wherein the plurality of resin layers are arranged so as to surround the first region.

8. A method for manufacturing a semiconductor device using a substrate according to any one of claims 1 to 7, comprising the steps of: a step of mounting a plurality of the light receiving elements and a plurality of the switching elements in the first region of the sheet-like insulating member, the plurality of the switching elements being mounted on the plurality of metal pads, respectively; mounting a plurality of the light emitting elements on the plurality of the light receiving elements, respectively; electrically connecting the light receiving elements and the switching elements via metal wires, respectively; electrically connecting the plurality of light emitting elements to the plurality of first metal terminals via metal wires, respectively; molding a resin member that seals the plurality of light emitting elements, the plurality of light receiving elements, and the plurality of switching elements on the first region of the sheet-like insulating member; cutting the resin member and the sheet-like insulating member along the first region to separate the semiconductor devices; A method for manufacturing a semiconductor device comprising the steps of:

9. A method for manufacturing a semiconductor device using the substrate according to claim 3 or 4, comprising the steps of: a step of mounting a plurality of the light receiving elements and a plurality of the switching elements in the first region of the sheet-like insulating member, the plurality of the switching elements being mounted on the plurality of metal pads, respectively; mounting a plurality of the light emitting elements on the plurality of the light receiving elements, respectively; electrically connecting the light receiving elements and the switching elements via metal wires, respectively; electrically connecting the plurality of light emitting elements to the plurality of first metal terminals via metal wires; molding a resin member that seals the plurality of light emitting elements, the plurality of light receiving elements, and the plurality of switching elements on the first region of the sheet-like insulating member; cutting the resin member and the first region of the sheet-like insulating member along the first slits to separate the semiconductor devices; A method for manufacturing a semiconductor device comprising the steps of:

Images