Light emitting device and method for manufacturing the same

Abstract

To provide a light emission device which suppresses light leakage due to sag of an adhesive resin to a light emission element side surface and creep-up to a wavelength conversion body side surface, and a manufacturing method of the same.SOLUTION: A light emission device 100 comprises: a mounting substrate 10; a light emission element 20 which has a support substrate 21, a functional layer 23 including a light emission layer formed on the support substrate 21, and an electrode pad 25 apart from the functional layer 23 at an end on the end of the support substrate 21; a wavelength conversion body 30 which covers the upper surface of the light emission functional layer 23 via a resin part 50 on the light emission element; and a light reflection body which covers the side surface of the light emission element 20 and the side surface of the wavelength conversion body 30. The wavelength conversion body 30 comprises: a first side surface portion which extends in a vertical direction from an outer edge of a bottom surface opposing the light emission functional layer 23 on the side surface on the side of the electrode pad 25; and a second side surface portion which extends inward from the upper end of the first side surface portion to reach the outer edge of the upper surface. The resin part 50 is formed so as to cover a gap between the light emission functional layer 23 and the electrode pad 25, a portion on the electrode pad 25, and the first side surface portion.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a light emitting device including a light emitting element. [Background technology]

[0002] The light emitting device includes a substrate provided with terminals, wiring, etc., at least one light emitting element mounted on the substrate, and a wavelength converter that converts the wavelength of light emitted from the light emitting element. For example, Patent Document 1 discloses a light emitting device having a light emitting element, a wavelength converter, and a reflector that surrounds the light emitting element and the wavelength converter. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Special Publication No. 2013-535111 Summary of the Invention [Problem to be solved by the invention]

[0004] When a transparent adhesive resin is used to bond a light emitting element and a wavelength conversion body, a larger amount of the adhesive resin than desired may be applied in order to obtain sufficient bonding strength, which may cause the adhesive resin to drip onto the side surface of the light emitting element or to creep up onto the side surface of the wavelength conversion body.

[0005] For example, if adhesive resin drips onto the side of the light-emitting element, the adhesive resin will function as a light guide, and light emitted from the light-emitting surface of the light-emitting element will be absorbed by the supporting substrate of the light-emitting element, such as silicon, via the adhesive resin, reducing the light extraction efficiency of the light-emitting device.

[0006] Furthermore, if a large amount of adhesive resin creeps up on the side of the wavelength converter, the volume of the reflector around the upper surface of the wavelength converter, which is the light emission surface, will be reduced by the area where the adhesive resin creeps up, resulting in light leakage into the light-emitting portion of the light-emitting device, where light emitted from the light-emitting element will escape from the reflector that is not intended to emit light, via the creeping adhesive resin.

[0007] In order to prevent the adhesive resin from dripping or creeping up, it has been necessary to control with high precision the amount of adhesive resin applied to bond the light emitting element and the wavelength conversion body.

[0008] The present invention has been made in consideration of the above points, and aims to provide a light-emitting device and a manufacturing method thereof that suppresses light leakage caused by adhesive resin dripping onto the side of the light-emitting element and creeping up onto the side of the wavelength converter, thereby improving the light extraction efficiency of the light-emitting device. [Means for solving the problem]

[0009] The light emitting device according to the present invention includes a mounting substrate, a supporting substrate having a rectangular upper surface shape, a light emitting functional layer including a light emitting layer formed on the supporting substrate, and an electrode pad on the supporting substrate having a gap with the light emitting functional layer and extending over an end region along one side of the supporting substrate, and includes a light emitting element arranged on the mounting substrate, a wavelength converter arranged on the light emitting element via a resin part and covering an upper surface of the light emitting functional layer, and a light reflector arranged on the mounting substrate and covering side surfaces of the light emitting element and the wavelength converter, wherein the wavelength converter has a first side portion extending vertically from an outer edge of a bottom surface facing the light emitting functional layer on a side surface on the electrode pad side, and a second side portion extending inward from an upper end of the first side portion to reach the outer edge of an upper surface, At least one metal bump connected to a conductive wire is formed on the electrode pad of the light emitting element at a distance from the wavelength converter, and a height position of an upper end of the first side surface portion is higher than a height position of an upper end of the metal bump; The resin portion covers a gap between the light emitting functional layer and the electrode pad on the support substrate, at least a part of the electrode pad, and the first side surface portion. The wavelength converter includes an outflowing resin portion, and an upper end of the outflowing resin portion is located below an upper end position of the first side surface portion of the wavelength converter. It is characterized by the following.

[0010] The manufacturing method of the light emitting device according to the present invention includes: an element bonding step of bonding a light emitting element having a support substrate having a rectangular upper surface shape, a light emitting functional layer including a light emitting layer formed on the support substrate, and an electrode pad formed in an end region on the support substrate with a gap from the light emitting functional layer and along one side of the support substrate, to a mounting substrate; a bonding step of forming a metal bump on the electrode pad of the light emitting element to connect a conductive wire to the electrode pad; a resin application step of applying a resin to an upper surface of the light emitting functional layer on the light emitting functional layer of the light emitting element; a wavelength conversion body bonding step of bonding a wavelength conversion body having a side having a first side portion extending vertically from an outer edge of a bottom surface facing the light emitting functional layer and a second side portion extending inward from an upper end of the first side portion and reaching an outer edge of an upper surface to the resin so that the side surface is on the electrode pad side, so as to cover the light emitting functional layer from above; and a light reflector arrangement step of arranging a light reflector on the support substrate so as to cover the side surface of the light emitting element and the side surface of the wavelength conversion body, In the wavelength converter bonding step, the wavelength converter is bonded such that a height position of an upper end of the first side surface portion of the wavelength converter is higher than a height position of an upper end of the metal bump, and in the wavelength converter bonding step, the wavelength converter is bonded to the metal bump so as to be spaced apart from the metal bump; In the wavelength converter bonding step, the resin is caused to flow out from the upper surface of the light emitting functional layer so as to cover a gap between the light emitting functional layer and the electrode pad on the support substrate, at least a part of the electrode pad, and the first side surface portion. an outflowing resin portion is formed, and an upper end of the outflowing resin portion is located below an upper end position of the first side surface portion of the wavelength converter. It is characterized by the fact that [Brief description of the drawings]

[0011] [Figure 1] FIG. 2 is a top view of a light emitting device according to an embodiment of the present invention. [Diagram 2] 2 is a cross-sectional view of the light emitting device taken along line AA in FIG. [Diagram 3] 2 is an enlarged cross-sectional view of a light-emitting element of a light-emitting device according to an embodiment of the present invention. [Figure 4] 5A to 5C are diagrams illustrating a manufacturing flow of the light emitting device according to the embodiment of the present invention. [Diagram 5] 5A to 5C are cross-sectional views of the light emitting device according to the embodiment of the present invention during manufacturing. [Figure 6] 5A to 5C are cross-sectional views of the light emitting device according to the embodiment of the present invention during manufacturing. [Figure 7]5A to 5C are cross-sectional views of the light emitting device according to the embodiment of the present invention during manufacturing. [Figure 8] 3A and 3B are top views of the light emitting device during manufacture according to the embodiment of the present invention. [Figure 9] 5A to 5C are cross-sectional views of the light emitting device according to the embodiment of the present invention during manufacturing. [Figure 10] 5A to 5C are diagrams illustrating the wetting and spreading of an adhesive resin during the manufacture of a light emitting device according to an embodiment of the present invention. [Figure 11] 5A to 5C are diagrams illustrating the wetting and spreading of an adhesive resin during the manufacture of a light emitting device according to an embodiment of the present invention. [Figure 12] 5A to 5C are diagrams illustrating the wetting and spreading of an adhesive resin during the manufacture of a light emitting device according to an embodiment of the present invention. [Figure 13] 5A to 5C are diagrams illustrating the wetting and spreading of an adhesive resin during the manufacture of a light emitting device according to an embodiment of the present invention. [Figure 14] 5A to 5C are diagrams illustrating the wetting and spreading of an adhesive resin during the manufacture of a light emitting device according to an embodiment of the present invention. [Figure 15] 5A to 5C are diagrams illustrating the wetting and spreading of an adhesive resin during the manufacture of a light emitting device according to an embodiment of the present invention. [Figure 16] 5A to 5C are cross-sectional views of the light emitting device according to the embodiment of the present invention during manufacturing. [Figure 17] 13 is a top view of a light emitting device during manufacture according to a modified example of the present invention. FIG. [Figure 18] 18 is a cross-sectional view of the light emitting device taken along line BB in FIG. 17. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] The following is a detailed description of an embodiment of the present invention. In the following description and the accompanying drawings, substantially the same or equivalent parts are given the same reference numerals. In the following description, the term "material 1 / material 2" refers to a laminated structure in which material 2 is laminated on material 1. Furthermore, the term "material 1-material 2" refers to an alloy of materials 1 and 2. EXAMPLES

[0013] Fig. 1 shows a schematic top view of a light emitting device 100. Fig. 2 shows a cross-sectional view of the light emitting device 100 taken along line AA of Fig. 1.

[0014] (Light emitting device) The light emitting device 100 has a substrate 10 having a concave cavity formed on one surface. The light emitting device 100 also has a first wiring 13 and a second wiring 15 formed on the bottom surface of the cavity of the substrate 10, and a light emitting element 20 arranged on the first wiring 13. The light emitting device 100 also has a wavelength converter 30 arranged on the light emitting element 20 via a resin part 50, and a light reflector 60 filled in the cavity of the substrate 10 so as to expose the light output surface 30T, which is the upper surface of the wavelength converter 30. In FIG. 1, the light reflector 60 is omitted in order to clarify the structure and positional relationship of each element in the cavity of the substrate 10.

[0015] The substrate 10 as a mounting substrate for the light emitting element 20 is a flat substrate having a rectangular upper surface shape in a top view. One surface of the substrate 10 is opened, and a concave cavity is formed. In this embodiment, the substrate 10 is integrally formed with a concave cavity consisting of a bottom and a side wall, but the bottom and the side wall may be configured separately, and the side wall is provided arbitrarily. In the following description, the cavity opening surface of the substrate 10 is referred to as the upper surface of the substrate 10, and the surface of the substrate 10 opposite to the cavity opening surface is referred to as the lower surface. In the following description, the direction in which the upper surface of the substrate 10 faces is referred to as the upward direction, and the direction in which the lower surface of the substrate 10 faces is referred to as the downward direction.

[0016] The cavity of the substrate 10 is formed, for example, by a rectangular bottom surface and an inner side surface surrounding the bottom surface. The inner side surface of the cavity is formed, for example, vertically from an opening on the upper surface of the substrate 10 toward the bottom surface of the cavity, or is formed inclined so as to narrow downward from the opening.

[0017] The substrate 10 is made of, for example, alumina (Al 2 O 3) and aluminum nitride (AlN) are used as insulating ceramic substrates with high thermal conductivity.

[0018] In this embodiment, the substrate 10 used was a flat alumina substrate having a cavity formed therein, the cavity having a rectangular bottom surface and an inner side surface surrounding the bottom surface and extending vertically.

[0019] The base material of the substrate 10 is not limited to the above ceramic material, and may be a thermosetting resin such as epoxy resin (EP), silicone resin (Si), bismaleimide triazine (BT) resin, etc. The substrate 10 may be a metal substrate having a base material such as copper (Cu) or the like and an insulating film formed so as to cover the surface thereof.

[0020] The substrate 10 may be an integrated substrate obtained by processing a cavity shape of the substrate 10 from a single base material. The substrate 10 may be a substrate in which the cavity is formed by bonding a flat plate to a frame having an opening penetrating from the top surface to the bottom surface of the substrate 10 so as to close the opening on the bottom surface of the frame. The inner surface of the cavity of the substrate 10 may have a shape that combines a vertical surface and an inclined surface.

[0021] On the bottom surface of the cavity of the substrate 10, a first wiring 13 and a second wiring 15 are formed as shown in FIGS.

[0022] The first wiring 13 is, for example, a die pad portion having a rectangular upper surface shape on which the light emitting element 20 can be placed at the bottom surface of the cavity of the substrate 10. The second wiring 15 is a bonding region for connecting a bonding wire BW that is electrically connected to the light emitting element 20 to the substrate 10 side.

[0023] 2, a portion of each of the first wiring 13 and the second wiring 15 penetrates the substrate 10 and reaches the lower surface of the substrate 10 and is exposed. The portions of the first wiring 13 and the second wiring 15 exposed on the lower surface function as mounting electrodes of the light emitting device 100. The lower surface of the substrate 10 also serves as the bottom surface of the light emitting device 100.

[0024] The first wiring 13 and the second wiring 15 are made of a metal or alloy containing any one of copper (Cu), aluminum (Al), and tungsten (W). The first wiring 13 and the second wiring 15 have a nickel (Ni) / gold (Au) metal film laminated on the portions exposed on the bottom surface of the cavity and the lower surface of the substrate 10. In this embodiment, the first wiring 13 and the second wiring 15 are made of an alloy containing Cu.

[0025] The light emitting element 20 is a light emitting diode (LED) which is a semiconductor light emitting element. Note that a semiconductor light emitting element such as an LED or an LD (Laser Diode) can be used as the light emitting element 20, and is preferably an LED which emits ultraviolet to blue light. In this embodiment, an LED which emits blue light is used.

[0026] The light-emitting element 20 has a support substrate 21 having a rectangular upper surface shape, a light-emitting functional layer 23 having a rectangular upper surface shape formed on the support substrate 21, and an electrode pad 25 formed in a strip shape on the support substrate 21, spaced apart from the light-emitting functional layer 23 and along one side of the support substrate 21.

[0027] The support substrate 21 is made of a material that is opaque to the light emitted from the light-emitting functional layer 23, for example, an opaque and conductive silicon substrate. Since the support substrate 21 is made of a material that absorbs the light emitted from the light-emitting functional layer 23, a reflective layer is formed in the region on the support substrate 21 where the light-emitting functional layer 23 is disposed, thereby suppressing absorption of the emitted light on the upper surface of the support substrate 21. The reflective layer on the support substrate 21 can be formed as a reflective electrode layer that also serves as an electrode for supplying power to the light-emitting element.

[0028] A rectangular electrode pad 25 is disposed along one side of a rectangular support substrate 21, and a rectangular light-emitting functional layer 23 is disposed along the remaining three sides. The electrode pad 25 and the reflective electrode layer are disposed at a distance from each other and are formed of a SiO 2 The insulating layers are appropriately electrically isolated from each other.

[0029] The light emitting element 20 has a structure in which a light emitting functional layer 23 having a thickness of about 4 to 6 μm and including a p-type semiconductor layer, a light emitting layer, and an n-type semiconductor layer laminated thereon is bonded to one side of a conductive support substrate 21 made of silicon (Si) and having a thickness of about 100 μm, via a reflective electrode layer. The light emitting functional layer 23 side of the support substrate 21 is the upper surface of the light emitting element 20, and the opposite side is the lower surface or bottom surface of the light emitting element 20. The surface of the light emitting functional layer 23 opposite the reflective electrode layer, i.e., the upper surface of the light emitting functional layer 23, is the element light emitting surface of the light emitting element 20.

[0030] The light emitting element 20 has a bonding electrode (not shown) on the bottom surface, and is bonded and electrically connected to the first wiring 13 via the element bonding layer 40. In other words, the reflective electrode layer is electrically connected to the first wiring 13 via the support substrate 21, and functions as a cathode electrode of the light emitting element 20.

[0031] The light-emitting element 20 also has an electrode pad 25 formed to be spaced apart from the light-emitting functional layer 23 on the support substrate 21 via a gap. The electrode pad 25 is electrically connected to the p-type semiconductor layer of the light-emitting functional layer 23, and functions as an anode electrode of each of the light-emitting elements 20.

[0032] Furthermore, a metal bump BP is disposed on the electrode pad 25 of the light emitting element 20, and the electrode pad 25 is electrically connected to the second wiring 15 via the metal bump BP and a bonding wire BW. At least one metal bump BP is disposed, but it is preferable to dispose a plurality of metal bumps BP along the extension direction of the rectangular electrode pad 25. The bonding wire BW and the metal bump BP are made of, for example, a metal wire of the same material, and a metal wire containing gold (Au), aluminum (Al), platinum (Pt), copper (Cu), etc. can be used.

[0033] The metal bump BP is provided on the electrode pad 25 of the light emitting element 20. The metal bump BP is formed by forming a free ball on the tip of a metal wire and bonding it onto the electrode pad 25.

[0034] The bonding wire BW rises upward from the pressure-bonded ball joined to the second wiring 15, then extends substantially parallel to the upper surface of the light-emitting element 20 and is joined onto the metal bump BP. In this embodiment, an Au wire having a diameter of 30 μm is used as the bonding wire BW, and three metal bumps BP each having a thickness of about 25 μm are formed.

[0035] One metal bump BP and one bonding wire BW form a pair, and the pair of metal bump BP and bonding wire BW are formed in multiple pairs in different regions of the electrode pad 25 and second wiring 15 of the light-emitting element 20. In this embodiment, three pairs of metal bump BP and bonding wire BW are formed on the electrode pad 25 and second wiring 15 of the light-emitting element 20. Note that, within a range where the power supply resistance can be ignored, the metal bump BP may be a dummy bump to which no bonding wire BW is connected.

[0036] The element bonding layer 40 is a conductive metal, and bonds and fixes the light emitting element 20 onto the first wiring 13, while allowing current to flow through the layer. For example, high-temperature solder, eutectic alloy, silver paste, gold bump, nanoparticle sintered body, etc. that do not melt when the light emitting device 100 is mounted on a mounting substrate can be used for the element bonding layer 40. In this embodiment, a eutectic alloy made of gold-tin (Au-Sn) is used as the element bonding layer 40. That is, the light emitting element 20 emits light by passing current between the first wiring 13 and the second wiring 15 of the substrate 10.

[0037] The wavelength converter 30 is composed of a member containing a phosphor that converts incident light into light with a longer wavelength than that of the incident light and emits the light. The outer shape of the wavelength converter 30 in a top view is substantially the same shape and size as the light-emitting functional layer 23 of the light-emitting element 20. The wavelength converter 30 is disposed via a resin part 50 so as to cover the upper surface of the light-emitting functional layer 23 of the light-emitting element 20. The wavelength converter 30 also has two main surfaces: a light-entering surface that faces the upper surface of the light-emitting functional layer 23 and is a lower surface through which light emitted from the light-emitting functional layer 23 enters, and a light-emitting surface 30T that is an upper surface facing the outside of the light-emitting device 100.

[0038] The wavelength converter 30 may be, for example, a polycrystalline sintered body including a yttrium aluminum garnet (YAG) phosphor doped with cerium (Ce) and / or europium (Eu), a sialon phosphor, an oxynitride phosphor, or a silicon oxide phosphor. In this embodiment, the wavelength converter 30 is made of YAG:Ce phosphor particles doped with a cerium (Ce) activator and alumina (Al 2 O 3 In the present embodiment, a polycrystalline sintered body using ZnO 2 .0 % ZnO particles as binder particles is described. The wavelength converter 30 is adjusted to absorb a part of the blue light emitted by the light emitting element 20 and emit yellow light, and the light emitted from the light emitting device 100, i.e., the light emitted from the light emitting surface 30T of the wavelength converter 30, becomes white light.

[0039] The wavelength converter 30 has a substantially convex cross-sectional shape as shown in FIG. 2. That is, the wavelength converter 30 has a shape in which the area of ​​the light-emitting surface 30T, which is the upper surface, is smaller than the area of ​​the lower surface. The wavelength converter 30 has a first side surface portion 30S1 extending vertically upward from the outer edge of the lower surface, and a second side surface portion 30S2 extending from the upper end of the first side surface portion 30S1 to the outer edge of the light-emitting surface 30T on its side surface. The second side surface portion 30S2 of the wavelength converter 30 is composed of a curved surface 30C extending inward from the upper end of the first side surface portion 30S1 and curved concavely in the extending direction, and a flat surface 30F extending from the upper end of the curved surface 30C to the outer edge of the light-emitting surface 30T of the wavelength converter 30. Moreover, the wavelength converter 30 is formed so that the first side surface portion 30S1 and the curved surface 30C form an angle, and the curved surface 30C and the flat surface 30F form a continuous surface. In this embodiment, the first side surface portion 30S1 and the second side surface portion 30S2 are formed on all side surfaces of the wavelength converter 30.

[0040] The resin part 50 is formed on the upper surface of the light-emitting element 20, and has a function of bonding the light-emitting functional layer 23 of the light-emitting element 20 to the wavelength converter 30. The resin part 50 is formed as a translucent silicone resin that transmits the radiation light of each of the light-emitting elements 20, for example, by thermally curing a precursor paste of a silicone adhesive.

[0041] The resin part 50 is arranged so as to fill the space of the region where the upper surface of the light emitting element 20 and the lower surface of the wavelength converter 30 facing the upper surface of the light emitting element 20 overlap in top view. In the following description, the region where the upper surface of the light emitting element 20 and the lower surface of the wavelength converter 30 overlap in top view is referred to as a bonding region. In addition, the part of the resin part 50 arranged in the bonding region is referred to as a bonding resin part 51.

[0042] In the resin part 50, on the upper surface of the support substrate 21 of the light emitting element 20, an outflowing resin part 52 is formed outside the bonding region, covering the gap between the light emitting functional layer 23 on the support substrate 21 and the electrode pad 25 and at least a part of the upper surface of the electrode pad 25. The outflowing resin part 52 is formed such that the resin supplied onto the light emitting element 20 when the wavelength converter is bonded onto the light emitting element 20 extends from the bonding region beyond the gap between the light emitting functional layer 23 and the electrode pad 25 onto the upper surface of the electrode pad 25.

[0043] That is, the resin part 50 is integrally formed by a bonding resin part 51 that fills the bonding area between the upper surface of the light-emitting element 20 and the wavelength converter 30, and an outflowing resin part 52 that is formed on the upper surface of the light-emitting element 20 on the outer side of the electrode pad 25 of the bonding resin part 51.

[0044] The outflowing resin portion 52 is formed so as to cover a part or the whole of the first side portion of the wavelength converter 30 on the electrode pad 25 side, and is formed so as not to reach the second side portion of the wavelength converter 30.

[0045] The bonding resin part 51 and the outflowing resin part 52 are made of the same precursor paste. In the manufacturing process described below, the precursor paste of the bonding resin part 51 and the outflowing resin part 52 flows out from the bonding region onto the electrode pad 25, and is heated and cured to form the bonding resin part 51 and the outflowing resin part 52. That is, the bonding resin part 51 and the outflowing resin part 52 function as a continuously formed resin part 50.

[0046] Moreover, the precursor paste creeps up to the first side surface portion 30S1 of the wavelength converter 30, and extends from the electrode pad 25 to the first side surface portion 30S1. In this manner, the precursor paste extends from the electrode pad 25 to the first side surface portion 30S1 and is stored, whereby the precursor paste can be prevented from dripping onto the side surface of the supporting substrate 21. In other words, the bonding resin portion 51 and the overflowing resin portion 52 can be prevented from extending onto the side surface of the supporting substrate 21 of the light emitting element 20.

[0047] This allows the light emitted from the light-emitting functional layer 23 and the wavelength converter 30 to be guided to the side of the supporting substrate 21, making it possible to prevent the light from being absorbed by the supporting substrate 21, thereby preventing a reduction in the light extraction efficiency of the light-emitting device 100.

[0048] Furthermore, because the wavelength converter 30 has a substantially convex shape, the precursor paste can be limited to the first side surface portion 30S1 when creeping up the side surface of the wavelength converter 30, and does not reach the second side surface portion 30S2 of the wavelength converter 30. As a result, the resin part 50 does not cover the second side surface portion 30S2 of the wavelength converter 30, so that the second side surface portion 30S2 of the wavelength converter 30 can be reliably covered by the light reflector 60, and light leakage from the light reflector 60 can be suppressed.

[0049] Furthermore, it is preferable that the resin part 50 does not cover the first side portion 30S1 on the other three side surfaces of the wavelength converter 30 other than the side of the electrode pad 25, and even when it reaches the first side portion 30S1, it does not cover the second side portion 30S2.

[0050] 2, the light reflector 60 is filled in the cavity of the substrate 10 so as to seal the light emitting element 20 and cover the side surface of the wavelength converter 30. The light reflector 60 is a resin material having reflectivity for the light emitted from the light emitting element 20 and the light emitted from the wavelength converter 30. The light reflector 60 is filled in the cavity so as to expose the light output surface 30T, which is the upper surface of the wavelength converter 30. That is, the light reflector 60 is disposed in the cavity of the substrate 10 so as to cover the side surface of the light emitting element 20 and the side surface of the wavelength converter 30.

[0051] The light reflector 60 of this embodiment is a thermosetting silicone resin containing titanium dioxide (TiO 2 ) was dispersed in a white resin.

[0052] The light reflector 60 covers at least the second side surface portion 30S2 of the wavelength converter 30, and covers the first side surface portion 30S1 of the wavelength converter 30 directly or via the outflowing resin portion 52.

[0053] The light reflector 60 covers the side surface of the light emitting element 20 and the side surface of the wavelength converter 30, so that the upper surface of the wavelength converter 30 can be determined as the light output surface of the light emitting device 100. In addition, the light reflector 60 covers the second side surface portion 30S2 of the wavelength converter 30, so that light leakage from the light reflector 60 can be suppressed.

[0054] 3 is an enlarged cross-sectional view enlarging the periphery of the light emitting element 20, the wavelength converter 30, the bonding resin portion 51, and the outflowing resin portion 52. Note that Fig. 3 is an enlarged cross-sectional view of the cross section indicated by the line AA in Fig. 1.

[0055] In the bonding region between the light emitting element 20 and the wavelength converter 30, a bonding resin part 51 is formed to bond the upper surface of the support substrate 21 to the lower surface of the wavelength converter 30. In addition, an outflowing resin part 52 is formed on the support substrate 21, the outflowing resin part 52 being continuous with the bonding resin part 51 and extending from the bonding region beyond the gap between the light emitting functional layer 23 and the electrode pad 25 onto the upper surface of the electrode pad 25.

[0056] A protective film CV is formed on the upper surface of the support substrate 21 except for the light emitting functional layer 23 and the electrode pads 25. The protective film CV is made of silicon oxide (SiO 2 ) and is formed so as to cover the side surfaces of the electrode pads 25 and part of the outer edges of the upper surfaces of the electrode pads 25 .

[0057] Moreover, a metal bump BP and a bonding wire BW bonded to the metal bump BP are formed on the electrode pad 25. The metal bump BP and the bonding wire BW are formed so as to be spaced apart from the wavelength converter 30. If the bonding wire BW comes into contact with the wavelength converter 30, the metal bump BP and the bonding wire BW may be damaged, the electrode pad 25 and the light emitting functional layer 23 and the protective film CV on the support substrate 21 may be damaged, or the wavelength converter 30 may be misaligned. Therefore, it is preferable that the metal bump BP and the bonding wire BW are spaced apart from the wavelength converter 30.

[0058] In a manufacturing process described later, when applying (hereinafter also referred to as potting) a precursor paste of the resin part 50, the precursor paste is applied to an area located from the center of the upper surface of the light-emitting functional layer 23 toward the electrode pad 25. Thereafter, the wavelength converter 30 is placed on the precursor paste.

[0059] After the wavelength converter 30 is placed, the precursor paste is spread out by the weight of the wavelength converter 30. At this time, the end of the precursor paste being spread out reaches the outer end of the side facing the electrode pad 25 on the upper surface of the light-emitting functional layer 23, and flows over the gap (protective film CV) between the light-emitting functional layer 23 and the electrode pad 25 and onto the upper surface of the electrode pad 25.

[0060] In the following explanation, the precursor paste in the bonding area between the upper surface of the light-emitting element 20 and the lower surface of the wavelength converter 30 will be referred to as bonding portion paste 51M, and the precursor paste that has flowed out from the bonding area will be referred to as flow-out portion paste 52M.

[0061] The outflow paste 52M that flows out from the bonding region spreads into the electrode pad 25 by capillary action, propagating along the outer end of the electrode pad 25, particularly the surface of the electrode pad 25 and the side of the protective film CV on the electrode pad 25 side. The outflow paste 52M that spreads into the electrode pad 25 is attracted and stored around the metal bump BP and the bonding wire BW by capillary action. At this time, the outflow paste 52M creeps up to the first side portion 30S1 of the wavelength converter 30. In other words, the bonding paste 51M flows out of the bonding region as the outflow paste 52M before it completely wets and spreads into the bonding region between the upper surface of the light emitting element 20 and the lower surface of the wavelength converter 30. The outflow paste 52M is attracted (drained) and stored in the region from the upper surface of the electrode pad 25 to the first side portion 30S1 of the wavelength converter 30. In order to absorb and store the outflow paste 52M, it is preferable to form two or more metal bumps BP in different regions on the upper surface of the electrode pad 25 of the light emitting element 20. In particular, it is more preferable to form two or more metal bumps BP along the extension direction of the electrode pad 25 in order to uniformly form the outflow resin portion 52 along the edge of the light emitting functional layer 23 on the electrode pad 25 side.

[0062] Thereafter, the bonding paste 51M spreads due to capillary action within the bonding area between the upper surface of the light-emitting element 20 and the lower surface of the wavelength converter 30, and the amount of precursor paste required for spreading throughout the entire bonding area is supplied (re-drained) from the outflow paste 52M.

[0063] The re-draining from the outflow portion paste 52M to the joint portion paste 51M is automatically performed until the surface tension of both the exposed surfaces of the joint portion paste 51M and the outflow portion paste 52M becomes the smallest. That is, the joint portion paste 51M is self-volume-controlled to an appropriate amount by draining and re-draining the precursor paste from the outflow portion paste 52M stored in the region from the upper surface of the electrode pad 25 to the first side surface portion 30S1 of the wavelength converter 30. The joint portion paste 51M and the outflow portion paste 52M that have been self-volume-controlled to an appropriate amount as described above are then heated and cured to become the joint resin portion 51 and the outflowing resin portion 52.

[0064] As described above, since the first side surface portion 30S1 and the curved surface 30C of the wavelength converter 30 are formed to form an angle, it is possible to prevent the outflow paste 52M from creeping up to the upper end or higher of the first side surface portion 30S1 (inside the outer end of the curved surface 30C). It is preferable that the angle formed by the tangent plane (two-dot chain line in the figure) at the point where the curved surface 30C contacts the upper end of the first side surface portion 30S1 and the first side surface portion 30S1 is 135° or less. More preferably, the angle is 120° or less. By forming the first side surface portion 30S1 and the curved surface 30C to have such an angle, it is possible to prevent the outflow paste 52M from creeping up to the curved surface 30C beyond the first side surface portion 30S1.

[0065] Moreover, the height position of the upper end of the first side surface portion 30S1 of the wavelength converter 30 is preferably higher than the metal bump BP and near the upper end of the bonding wire BW on the metal bump BP. The height position of the upper end of the first side surface portion 30S1 of the wavelength converter 30 is preferably near the upper end of the bonding wire BW and slightly higher than the bonding wire BW. This makes it possible to prevent the outflow paste 52M from climbing over the upper end of the first side surface portion 30S1 when the outflow paste 52M is sucked around the metal bump BP and the bonding wire BW. That is, the upper ends of the outflow paste 52M and the outflow resin portion 52 after heat curing are at the position of the upper end of the first side surface portion 30S1 of the wavelength converter 30 or below the upper end of the first side surface portion 30S1.

[0066] If the height position of the upper end of the first side portion 30S1 is too low, the outflow paste 52M may go over the upper end of the first side portion 30S1 when it is sucked around the metal bump BP and the bonding wire BW. If the height position of the upper end of the first side portion 30S1 is too high, the outflow paste 52M may flow out beyond the outer end of the light emitting element 20 along the bonding wire BW and drip onto the side of the light emitting element 20 (the side of the support substrate 21). Therefore, the relationship between the upper end position of the first side portion 30S1 and the height positions of the metal bump BP and the bonding wire BW is adjusted according to the viscosity and behavior of the joint paste 51M and the outflow paste 52M.

[0067] This makes it possible to prevent the outflowing resin portion 52 from excessively creeping up onto the side surfaces of the wavelength converter 30. Therefore, it is possible to prevent light from leaking from other than the light output surface of the light emitting device 100.

[0068] In addition, the height from the lower surface of the wavelength converter 30 to the upper end of the first side surface portion 30S1 is preferably 1 / 3 or less of the thickness of the wavelength converter 30. In terms of actual dimensions, the height from the light-emitting surface 30T, which is the upper surface of the wavelength converter 30, to the upper end of the first side surface portion 30S1 is preferably 100 μm or more. This makes it possible to reduce the amount of light emitted from the side surface of the wavelength converter 30 that is not completely reflected by the light reflector 60 and is transmitted, and is emitted as glare light that leaks from the upper surface of the light reflector 60. That is, by having the above-mentioned shape of the wavelength converter 30, the light reflector 60 can efficiently reflect the light emitted from the side surface of the wavelength converter 30, particularly the surface of the curved surface 30C.

[0069] Furthermore, the light reflector 60 efficiently reflects the light emitted from the side surface of the wavelength converter 30, thereby increasing the amount of return light returning from the light reflector 60 to the wavelength converter 30. Therefore, the return light is emitted from the light output surface 30T, which is the upper surface of the wavelength converter 30, thereby making it possible to improve the light extraction efficiency of the light emitting device 100.

[0070] In order to achieve the above-mentioned effects, the light reflector 60 is disposed so as to be in close contact with the side surface of the wavelength converter 30, particularly the second side surface portion 30S2.

[0071] (Manufacturing method of light emitting device of the embodiment) Next, a manufacturing procedure for the light emitting device 100 according to the embodiment of the present invention will be described with reference to FIG. 4 and FIGS.

[0072] Fig. 4 is a diagram showing a manufacturing flow of the light emitting device 100 according to an embodiment of the present invention. Figs. 5 to 7, 9 and 16 show cross-sectional views of the light emitting device 100 in each step of the manufacturing procedure shown in Fig. 4. Fig. 8 shows a top view of the light emitting device 100 at the end of step S13 of the manufacturing procedure shown in Fig. 5. Figs. 10 to 15 are diagrams showing details of the application position and wetting spread of the precursor paste in step S14 of the manufacturing procedure shown in Fig. 5.

[0073] The element bonding step is a step of bonding the light emitting element 20 to the substrate 10 (step S11), as shown in FIG. 5. First, the substrate 10 is prepared, in which a concave cavity is formed on the upper surface, and the first wiring 13 and the second wiring 15 are provided on the bottom surface of the cavity. Next, gold-tin (Au-Sn) paste is applied to the upper surface of the first wiring 13. Next, a bonding electrode (not shown) provided on the bottom surface of the light emitting element 20 is pressed onto the applied Au-Sn paste for temporary attachment. The substrate 10 in this state is heated to 300° C. to melt and solidify the Au-Sn paste, and the light emitting element 20 is fixed to the first wiring 13 and electrically connected.

[0074] 6, the bonding process is a process of connecting the electrode pad 25 of the light emitting element 20 and the second wiring 15 with a metal bump BP and a bonding wire BW (step S12). First, a free ball is formed at the tip of a gold (Au) wire and pressure-bonded onto the electrode pad 25, and then the Au wire is cut to form a metal bump BP. Next, a free ball is formed at the tip of the Au wire and connected to the upper surface of the second wiring 15, and raised upward to the height of the electrode pad 25 of the light emitting element 20. Next, the Au wire is bent so as to be approximately horizontal with the upper surface of the light emitting element 20 and extended to the electrode pad 25 of the light emitting element 20, and the other end of the Au wire is connected to the metal bump BP on the electrode pad 25 to form a bonding wire BW.

[0075] 7 and 8, the resin application step is a step of applying a precursor paste PP that becomes the bonding resin portion 51 and the overflowing resin portion 52 to the upper surface of the light-emitting functional layer 23 of the light-emitting element 20 (step S13). Using a dispenser or the like filled with the precursor paste PP, which is uncured silicone resin, the precursor paste PP is applied to an area located from the center of the upper surface of the light-emitting functional layer 23 to the electrode pad 25 side. Note that the dashed dotted line shown in FIGS. 7 and 8 is a center line passing through the center of the upper surface of the light-emitting functional layer 23 of the light-emitting element 20.

[0076] 9, the wavelength converter bonding step is a step of placing and bonding the wavelength converter 30 on the precursor paste PP applied on the light emitting functional layer 23 of the light emitting element 20 (step S14). First, as described above, the wavelength converter 30 is prepared, the side surface of which is composed of the first side surface portion 30S1 and the second side surface portion 30S2 composed of the curved surface 30C and the flat surface 30F.

[0077] This wavelength converter 30 is placed on the precursor paste PP, and the precursor paste PP is allowed to flow onto the electrode pad 25 and creep up onto the first side surface portion 30S1 of the wavelength converter 30, while spreading over the entire bonding region between the upper surface of the light emitting element 20 and the lower surface of the wavelength converter 30. Thereafter, the precursor paste PP is heat-treated at 150° C. for 15 minutes to harden the precursor paste PP, thereby forming a bonding resin portion 51 and an outflowing resin portion 52.

[0078] The wavelength converter 30 can be obtained by sintering a mixture of YAG phosphor powder and alumina powder on a flat plate and dicing the mixture. Specifically, the flat plate is step-cut using a first blade having a curved tip and a second blade having a smaller thickness than the first blade to form the wavelength converter 30 having the first side portion 30S1, the curved surface 30C, and the flat surface 30F.

[0079] The behavior of the precursor paste PP as it spreads in step S14 and the behavior of the precursor paste PP as it flows out, accumulates, and is supplied will be described below with reference to FIGS.

[0080] Figures 10, 12 and 14 are enlarged top views of the light emitting element 20 and the wavelength converter 30. Also, Figures 11, 13 and 15 are enlarged cross-sectional views of the light emitting element 20 and the wavelength converter 30 taken along line AA shown in Figure 1. Note that the substrate 10 is omitted from Figures 10 to 15. Also, the bonding wires BW are omitted from Figures 10, 12 and 14.

[0081] In the description from FIG. 10 onwards, the precursor paste PP in the bonding region between the upper surface of the light emitting element 20 and the lower surface of the wavelength converter 30 after the wavelength converter 30 is placed is referred to as bonding paste 51M.

[0082] 10 and 11, the wavelength converter 30 is placed so that its lower surface covers the upper surface of the light emitting functional layer 23 in top view and is in contact with the precursor paste PP. As shown in Fig. 11, for example, the outer end of the wavelength converter 30 held by an adsorption collet CT or the like is placed in alignment with the end MP, which is the outer end of the side of the support substrate 21 opposite to the side on which the electrode pads 25 are provided.

[0083] After the wavelength converter 30 is placed, the bonding paste 51M spreads concentrically on the upper surface of the light-emitting functional layer 23 as shown in Fig. 10, as indicated by the dashed arrows in Fig. 10. Note that it is preferable to release the suction collet CT from holding the wavelength converter 30 before the bonding paste 51M flows out from the bonding region toward the electrode pad 25.

[0084] 12, the outer end of the wetting and spreading joint paste 51M reaches the side of the light-emitting functional layer 23 on the electrode pad 25 side earliest due to the application position of the precursor paste PP. Therefore, as indicated by the dashed arrow in FIG. 12, the joint paste 51M flows out from the side of the light-emitting functional layer 23 on the electrode pad 25 side onto the electrode pad 25 as the outflow paste 52M.

[0085] 13, the outflow paste 52M flowing out from the bonding paste 51M is attracted to the periphery of the metal bump BP and the bonding wire BW by capillary action as indicated by the arrows in Fig. 13, and creeps up to the first side surface portion 30S1 of the wavelength converter 30. As a result, the outflow paste 52M is stored in the region extending from the upper surface of the electrode pad 25 to the first side surface portion 30S1 of the wavelength converter 30.

[0086] At this time, the wavelength converter 30 released from the suction collet CT is tilted due to its own weight and the application position of the precursor paste PP. This tilt of the wavelength converter 30 promotes the outflow of the joint paste 51M, and the joint paste 51M is accumulated in the region from the upper surface of the electrode pad 25 to the first side surface portion 30S1 of the wavelength converter 30 before it completely wets and spreads.

[0087] Thereafter, as shown in Fig. 14, the bonding paste 51M spreads by capillary action into the bonding region between the upper surface of the light emitting element 20 and the lower surface of the wavelength converter 30, as indicated by the dashed arrows in Fig. 14. At this time, the precursor paste that is insufficient when the bonding paste 51M spreads into the bonding region between the upper surface of the light emitting element 20 and the lower surface of the wavelength converter 30 is supplied from the outflow paste 52M, as indicated by the dashed arrows in Fig. 14 and the arrows in Fig. 15.

[0088] Furthermore, the precursor paste is supplied from the outflow paste 52M to the joint paste 51M until the surface tension of the exposed surfaces of the joint paste 51M and the outflow paste 52M becomes the smallest, and the joint paste 51M is self-volume controlled. Furthermore, by the surface tension of the exposed surfaces of the joint paste 51M and the outflow paste 52M becoming the smallest, the wavelength converter 30 becomes stable in a substantially horizontal direction.

[0089] Moreover, the wavelength converter 30 is self-aligned to a position where it covers the upper surface of the light emitting functional layer 23 of the light emitting element 20 due to the surface tension of the bonding paste 51M. Specifically, as shown in Fig. 15, the wavelength converter 30 is self-aligned to a position where the surface tension of the bonding paste 51M exposed at the end MP of the side opposite to the side where the electrode pad 25 of the support substrate 21 is present is minimum (where the exposed area of ​​the bonding paste 51M at the end MP is minimum). That is, the wavelength converter 30 is self-aligned so as to be closest to the side surface of the side of the end MP and the side surface adjacent to the side surface of the side of the end MP in top view.

[0090] Thereafter, the joint paste 51M and the outflow paste 52M in this state were hardened by heat treatment.

[0091] The light reflector arrangement step is a step of filling the cavity of the substrate 10 with a light reflector 60, as shown in FIG. 16 (step S15).

[0092] First, titanium oxide (TiO 2) The silicone resin with nanoparticles dispersed therein is injected into the cavity of the substrate 10 so as to cover the side surfaces of the light emitting element 20 and the wavelength converter 30 and expose the light emitting surface 30T. The filling position or filling speed of the silicone resin is set so as not to generate air bubbles in the cavity and to adhere closely to the side surfaces of the support substrate 21 of the light emitting element 20, the exposed surfaces of the bonding resin portion 51 and the outflowing resin portion 52, the exposed surfaces of the first side surface portion 30S1 of each surface of the wavelength converter 30, and the surface of the second side surface portion 30S2.

[0093] Next, the silicone resin filled in the cavity was cured by heat treatment at 150° C. for 120 minutes to form the light reflector 60 .

[0094] By this operation, the first and second wirings 13 and 15 provided on the bottom surface of the cavity of the substrate 10, the light emitting element 20, the metal bumps BP and bonding wires BW, and the side surfaces of the wavelength converter 30 are sealed.

[0095] As described above, according to the manufacturing method of this embodiment, the light emitting device 100 can be manufactured by carrying out steps S11 to S15.

[0096] In particular, a wavelength converter 30 having a first side surface portion 30S1 and a second side surface portion 30S2 on its side surface is prepared, and a precursor paste PP that becomes the bonding resin portion 51 and the outflowing resin portion 52 is potted from the center of the upper surface of the light-emitting functional layer 23 of the light-emitting element 20 to a position on the side of the electrode pad 25. This makes it possible to cause the precursor paste PP to flow out from the light-emitting functional layer 23 to the electrode pad 25 side as outflow portion paste 52M, and to store the outflowing portion paste 52M in a region from the upper surface of the electrode pad 25 to the first side surface portion 30S1 of the wavelength converter 30.

[0097] A comparison will be made between the light emitting device 100 of the embodiment manufactured as described above and a light emitting device of a comparative example. The light emitting device of the comparative example has the same components and manufacturing method as the embodiment, except for the side shape of the wavelength converter. Therefore, only the differences between the light emitting device of the comparative example will be described. Comparative Example

[0098] In the wavelength converter in the light emitting device of the comparative example, the portion corresponding to the curved surface 30C of the wavelength converter 30 of the embodiment is formed as a flat inclined surface. That is, the wavelength converter of the comparative example has the flat surface 30F of the first side surface portion 30S1 and the second side surface portion 30S2, similar to the wavelength converter 30 of the embodiment. Therefore, the wavelength converter of the comparative example is different from the embodiment in that the portion connecting the upper end of the first side surface portion 30S1 and the flat surface 30F of the second side surface portion 30S2 is a flat inclined surface. In addition, the inclined surface of the wavelength converter of the comparative example has a gradient angle of 60°. That is, the angle formed by the inclined surface of the wavelength converter of the comparative example and the first side surface portion 30S1 is 150°.

[0099] First, the light emitting device 100 of the embodiment and the light emitting device of the comparative example were compared with respect to creeping up of the outflowing resin part 52 on the side surface of the wavelength converter. In a visual check after manufacture, in the light emitting device 100 of the embodiment, the creeping up of the outflowing resin part 52 was up to the upper end of the first side surface part 30S1 of the wavelength converter 30. In contrast, in the light emitting device of the comparative example, the outflowing resin part 52 exceeded the upper end of the first side surface part 30S1 of the wavelength converter and creeping up to the inclined surface occurred.

[0100] Next, the light emitting characteristics of the light emitting device 100 of the embodiment and the light emitting device of the comparative example were compared. The result was that the luminous flux value (lm: lumen) emitted from the light output surface (upper surface) of the wavelength converter, which is the light emitting region of the light emitting device, of the light emitting device 100 of the embodiment was 2.8% higher than that of the light emitting device of the comparative example.

[0101] Also, glare light, which is light leaking from the light reflector 60 of the light emitting device, was compared. The glare light is a relative luminous flux value at a point located 0.2 mm outward from the outer edge of the light emitting area of ​​the light emitting device, when the luminous flux value from the light emitting area of ​​the light emitting device is set to 1. As for glare light, the light emitting device 100 of the example showed a reduction of approximately 27% compared to the light emitting device of the comparative example.

[0102] According to the light emitting device 100 of the embodiment and the manufacturing method thereof, it is possible to suppress excessive creeping up of the adhesive resin that bonds the light emitting element 20 and the wavelength converter 30 to the wavelength converter 30. This also makes it possible for the light emitting device 100 to increase the luminous flux from the light emitting region (the light output surface 30T of the wavelength converter 30) and reduce glare light outside the light emitting region. In other words, the light emitting device 100 of the embodiment and the manufacturing method thereof can provide a light emitting device and a manufacturing method thereof that can suppress light leakage caused by the adhesive resin dripping down to the side surface of the light emitting element and creeping up to the side surface of the wavelength converter, and improve the light extraction efficiency of the light emitting device.

[0103] [Variations] In this embodiment, a description has been given of a case in which the first side surface portion 30S1 and the second side surface portion 30S2 are formed on both sides of the wavelength converter 30. However, the shape of the wavelength converter 30 is not limited to this.

[0104] Fig. 17 is a top view of a light emitting device 100A according to a modified example of the embodiment, and Fig. 18 is a cross-sectional view taken along line BB of the light emitting device 100A shown in Fig. 17.

[0105] The light emitting device 100A of the modified example differs from the embodiment in that the first side surface portion 70S1 and the second side surface portion 70S2 of the wavelength converter 70 are formed only on the side surface on the side of the electrode pad 25. Except for the above differences, the other components and manufacturing method of the light emitting device 100A of the modified example are similar to those of the embodiment.

[0106] In this modified example, the precursor paste PP that becomes the bonding resin portion 51 and the outflowing resin portion 52 during manufacturing flows out onto the upper surface of the electrode pad 25, and the outflowing resin portion 52 extends in a region from the upper surface of the electrode pad 25 to the first side surface portion 70S1. That is, as in the embodiment, after the wavelength converter 30 is placed on the upper surface of the light emitting element 20, the bonding portion paste 51M flows out from the bonding region as the outflowing portion paste 52M, and is sucked (drained) and stored in a region from the upper surface of the electrode pad 25 to the first side surface portion 70S1. In addition, when the bonding portion paste 51M spreads in the wetting region, the precursor paste PP is supplied (redrained) from the outflowing portion paste 52M to the bonding portion paste 51M. This makes it possible to perform self-volume control of the bonding portion paste 51M in the bonding region.

[0107] Therefore, even in the modified light emitting device 100A, excessive creeping up of the outflow resin part 52 onto the side surface of the wavelength converter 70 can be suppressed, and color unevenness and glare in the light obtained from the light emitting device 100A can be suppressed, and the light extraction efficiency of the light emitting device 100A can be improved.

[0108] Although the embodiment and the modified examples of the present invention have been described above, these are merely presented as examples and the present invention is not limited to these embodiments.

[0109] For example, in the present embodiment and the modified example, the light emitting element 20 is an LED, but the light emitting element 20 may be a surface emitting laser. In the manufacturing method, the bonding portion paste 51M and the outflowing portion paste 52M which become the bonding resin portion 51 and the outflowing resin portion 52 are hardened by the heat treatment in the wavelength converter bonding step, but they can also be hardened by the heat treatment in the subsequent coating member filling step.

[0110] In addition, in the present embodiment and the modified example, the case where one light emitting element 20 is mounted on the substrate 10 has been described, but a plurality of light emitting elements 20 may be mounted on the substrate 10. For example, a plurality of light emitting elements 20 may be arranged in a cavity of the substrate 10 such that the light emitting functional layer 23 and the electrode pad 25 are aligned in a row along the arrangement direction, and a wavelength converter having a side shape of the wavelength converter 30 or 70 may be arranged so as to extend integrally over each of the light emitting functional layers 23 of the plurality of light emitting elements 20. In addition, when a plurality of light emitting elements 20 are mounted on the substrate 10, the wavelength converter 30 or 70 may be separately arranged on each of the light emitting functional layers 23 of the plurality of light emitting elements 20. Even in this case, the drain of the precursor paste PP of the joint paste 51M in the joint region and the outflow paste 52M flowing out from the joint region on each light emitting element 20 and the re-drain to the joint can be realized in the same manner as in the embodiment.

[0111] In the present embodiment and the modified example, the light emitting devices 100 and 100A are described that include the wavelength converter 30 or 70 that is excited by the light emitted from the light emitting functional layer 23 of the light emitting element 20 and converts the wavelength of the emitted light. However, the wavelength converter 30 or 70 may be a light projection plate that does not convert the wavelength of the light emitted from the light emitting functional layer 23.

[0112] Thus, the described embodiments are not intended to limit the scope of the invention. The described embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These modifications are also included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims. [Explanation of symbols]

[0113] 100 Light emitting device 10 Substrate 13 First Wire 15 Second Wiring 20 Light emitting element 21 Support substrate 23 Light-emitting functional layer 25 Electrode Pads 30 Wavelength converter 40 Element bonding layer 50 Resin part 51 Bonded resin part 52 Resin outflow section 60 Light reflector 70 Wavelength converter

Claims

1. A mounting board; a light emitting element disposed on the mounting substrate, the light emitting element having a support substrate having a rectangular upper surface shape, a light emitting functional layer including a light emitting layer formed on the support substrate, and an electrode pad on the support substrate that is spaced from the light emitting functional layer and extends across an end region along one side of the support substrate; a wavelength converter disposed on the light emitting element via a resin portion and covering an upper surface of the light emitting functional layer; a light reflector disposed on the mounting substrate and covering a side surface of the light emitting element and a side surface of the wavelength converter; the wavelength converter has a first side surface portion extending vertically from an outer edge of a bottom surface facing the light emitting functional layer on a side surface on the electrode pad side, and a second side surface portion extending inward from an upper end of the first side surface portion to reach the outer edge of an upper surface, At least one metal bump to which a conductive wire is connected is formed on the electrode pad of the light emitting element at a distance from the wavelength converter, a height position of an upper end of the first side surface portion is higher than a height position of an upper end of the metal bump; the resin portion includes an outflowing resin portion that covers a gap between the light-emitting functional layer and the electrode pad on the support substrate, at least a portion of the electrode pad, and the first side surface portion; A light emitting device, characterized in that an upper end of the outflowing resin portion is located below an upper end position of a first side surface portion of the wavelength conversion body.

2. The light-emitting device described in claim 1, characterized in that the second side portion has a curved surface extending inward from the upper end of the first side portion and concave in the extending direction, and a flat surface extending from the upper end of the curved surface to the outer edge of the upper surface of the wavelength conversion body.

3. 3. The light emitting device according to claim 2, wherein a minor angle formed by a tangent plane at a point where the curved surface is in contact with an upper end of the first side surface portion and a surface including the first side surface portion is 135° or less.

4. 4. The light emitting device according to claim 1, wherein a height from the bottom surface to an upper end of the first side surface portion is equal to or less than one third of a thickness of the wavelength converter.

5. A light-emitting device as described in any one of claims 1 to 4, characterized in that the outer shape of the wavelength conversion body is approximately the same shape and size as the light-emitting functional layer of the light-emitting element.

6. The light emitting device according to claim 5 , wherein the metal bump is provided in two or more different regions on the electrode pad.

7. 7. The light emitting device according to claim 1, wherein the light reflector is in close contact with the second side surface portion of the wavelength converter.

8. A light-emitting device as described in any one of claims 1 to 7, characterized in that the outflow resin portion is in contact with the conductive wire connected to the metal bump.

9. The light-emitting device described in any one of claims 1 to 8, characterized in that the supporting substrate is made of a material that is opaque to the light emitted from the light-emitting functional layer.

10. A method for manufacturing a light emitting device, comprising the steps of: an element bonding process for bonding a light-emitting element to a mounting substrate, the light-emitting element having a support substrate having a rectangular upper surface shape, a light-emitting functional layer including a light-emitting layer formed on the support substrate, and an electrode pad formed along one side of the support substrate with a gap between the light-emitting functional layer and the electrode pad in an end region on the support substrate; a bonding step of forming a metal bump on the electrode pad of the light emitting element to connect a conductive wire to the electrode pad; a resin application step of applying a resin to an upper surface of the light-emitting functional layer on the light-emitting element; a wavelength converter bonding process for bonding a wavelength converter having a side having a first side portion extending vertically from an outer edge of a bottom surface facing the light emitting functional layer and a second side portion extending inward from an upper end of the first side portion to reach the outer edge of the upper surface, onto the resin so as to cover the light emitting functional layer from above, with the side facing the electrode pad; a light reflector disposing step of disposing a light reflector on the supporting substrate so as to cover a side surface of the light emitting element and a side surface of the wavelength converter, In the wavelength converter bonding step, the wavelength converter is bonded such that a height position of an upper end of the first side surface portion of the wavelength converter is higher than a height position of an upper end of the metal bump, In the wavelength conversion body bonding step, the wavelength conversion body is bonded to the metal bump so as to be spaced apart from the metal bump; a first side surface portion of the light-emitting functional layer and a second side surface portion of the light-emitting functional layer that is in contact with the first side surface portion of the wavelength converter, the first side surface portion of the light-emitting functional layer being in contact with the first side surface portion of the wavelength converter, the first side surface portion of the light-emitting functional layer being in contact with the first side surface portion of the wavelength converter, and the second side surface portion of the light-emitting functional layer being in contact with the first side surface portion of the wavelength converter, the first ...

11. 11. The method for manufacturing a light emitting device according to claim 10, wherein in the resin application step, the resin is applied to a position on the upper surface of the light emitting functional layer from the center toward the electrode pad.

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