Solid-state imaging device

Abstract

The purpose of the present invention is to suppress a dead time at the time of mode switching. A solid-state imaging device according to the present invention is provided with: a plurality of pixels (300) that each output a change in luminance of incident light; and a detection circuit (305) for outputting an event signal on the basis of the change in luminance output from each of the pixels. Each of the pixels is provided with: a photoelectric conversion element (311) for generating electric charge according to the amount of incident light; logarithmic transformation circuits (312, 313) that are connected to the photoelectric conversion element and that transform a photoelectric current flowing out from the photoelectric conversion element into a voltage signal according to the logarithmic value of said photoelectric current; and a first transistor (318) the drain of which is connected to a sense node of the logarithmic transformation circuits.

Description

[Technical field]

[0001] The present disclosure relates to a solid-state imaging device and an imaging apparatus. [Background technology]

[0002] Conventionally, in imaging devices and the like, a synchronous solid-state imaging device is used that captures image data (frames) in synchronization with a synchronous signal such as a vertical synchronous signal. In this general synchronous solid-state imaging device, image data can only be acquired at every synchronous signal period (e.g., 1 / 60 seconds), making it difficult to respond to cases where faster processing is required in fields related to traffic, robots, and the like. Therefore, a solid-state imaging device has been proposed that detects, for each pixel address, the fact that the amount of change in the luminance of that pixel exceeds a threshold as an address event (see, for example, Patent Document 1). A solid-state imaging device that detects an address event for each pixel in this way is also called an EVS (Event-based Vision Sensor) or a DVS (Dynamic Vision Sensor). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 5244587 Summary of the Invention [Problem to be solved by the invention]

[0004] However, in conventional EVS, operation can become unstable due to noise generation, potential fluctuations when switching between operation modes, and other factors.

[0005] In view of this, the present disclosure proposes a solid-state imaging device and an imaging device capable of suppressing instability in operation. [Means for solving the problem]

[0006] In order to solve the above problems, a solid-state imaging device according to one embodiment of the present disclosure includes a plurality of pixels each outputting a luminance change of incident light, and a detection circuit outputting an event signal based on the luminance change output from each of the pixels, each of the pixels including a photoelectric conversion element generating an electric charge according to an amount of incident light, a logarithmic conversion circuit connected to the photoelectric conversion element and converting a photocurrent flowing out of the photoelectric conversion element into a voltage signal corresponding to the logarithmic value of the photocurrent, and a first transistor having a drain connected to a sense node of the logarithmic conversion circuit. [Brief description of the drawings]

[0007] [Figure 1] 1 is a block diagram showing an example of the configuration of an imaging device according to a first embodiment. [Diagram 2] 1 is a diagram illustrating an example of a layered structure of a solid-state imaging device according to a first embodiment. [Diagram 3] 2 is an example of a plan view of the photosensor chip according to the first embodiment. [Figure 4] 1 is an example of a plan view of a detection chip according to a first embodiment. [Diagram 5] 3 is an example of a plan view of an address event detection unit according to the first embodiment. [Figure 6] 2 is a circuit diagram showing a configuration example of a logarithmic response unit according to the first embodiment. FIG. [Figure 7] 4 is a circuit diagram showing another configuration example of the logarithmic response unit according to the first embodiment. FIG. [Figure 8] 1 is a circuit diagram showing a schematic configuration example of a readout circuit according to a first embodiment. [Figure 9] 1 is a circuit diagram showing a schematic configuration example of a response circuit according to a first embodiment. [Figure 10] 2 is a block diagram showing an example of the configuration of a detection block according to the first embodiment. FIG. [Figure 11] FIG. 2 is a circuit diagram illustrating a configuration example of a differentiator according to the first embodiment. [Figure 12] 3 is a circuit diagram showing a configuration example of a comparison section according to the first embodiment. FIG. [Figure 13]2 is a circuit diagram showing a configuration example of a differentiator, a selector, and a comparator according to the first embodiment. FIG. [Figure 14] 6 is a timing chart showing an example of control of the row drive circuit in the EVS mode according to the first embodiment. [Figure 15] 5 is a timing chart showing an example of control of the row driving circuit in a CIS mode according to the first embodiment. [Figure 16] 2 is a block diagram showing an example of the configuration of a detection pixel and a detection circuit according to the first embodiment. FIG. [Figure 17] 5 is a flowchart showing an example of the operation of the solid-state imaging device according to the first embodiment. [Figure 18] FIG. 13 is a block diagram showing an example of the configuration of a detection pixel and a detection circuit according to a modified example of the first embodiment. [Figure 19] 10 is a timing chart showing an example of control of a row driving circuit in a modified example of the first embodiment. [Figure 20] FIG. 11 is a waveform diagram for explaining a dead period during a mode transition. [Figure 21] 2 is a circuit diagram showing a configuration example of a response circuit according to the first embodiment. FIG. [Figure 22] FIG. 4 is a circuit diagram showing a configuration example of a response circuit according to a first modified example of the first embodiment. [Figure 23] FIG. 11 is a circuit diagram showing a configuration example of a response circuit according to a second modified example of the first embodiment. [Figure 24] FIG. 11 is a circuit diagram showing a configuration example of a response circuit according to a third modified example of the first embodiment. [Diagram 25] FIG. 11 is a circuit diagram showing a configuration example of a response circuit according to a fourth modified example of the first embodiment. [Figure 26] FIG. 13 is a circuit diagram showing a configuration example of a response circuit according to a fifth modified example of the first embodiment. [Figure 27] FIG. 13 is a circuit diagram showing a configuration example of a response circuit according to a sixth modified example of the first embodiment. [Figure 28] FIG. 13 is a circuit diagram showing a configuration example of a response circuit according to a seventh modified example of the first embodiment. [Figure 29] FIG. 13 is a circuit diagram showing a configuration example of a response circuit according to an eighth modified example of the first embodiment. [Diagram 30] 11 is a timing chart showing an example of an operation at the time of transition from a CIS mode to an EVS mode according to the first embodiment. [Diagram 31] 5 is a flowchart showing an example of the operation of the imaging device according to the first embodiment. [Diagram 32] 1 is a circuit diagram showing an example of a circuit configuration of a shared block according to a first sharing example of the first embodiment. FIG. [Diagram 33] FIG. 13 is a circuit diagram showing an example of a circuit configuration of a shared block according to a second sharing example of the first embodiment. [Diagram 34] FIG. 13 is a circuit diagram showing an example of a circuit configuration of a shared block according to a third sharing example of the first embodiment. [Diagram 35] FIG. 13 is a circuit diagram showing an example of a circuit configuration of a shared block according to a fourth sharing example of the first embodiment. [Diagram 36] FIG. 2 is a plan view showing an example layout of a shared block according to a first layout example of the first embodiment. [Figure 37] FIG. 13 is a plan view showing an example layout of a shared block according to a second layout example of the first embodiment. [Figure 38] 13 is a timing chart showing an example of operation at the time of transition from a CIS mode to an EVS mode according to a first control example of the second embodiment. [Figure 39] 13 is a timing chart showing an example of operation at the time of transition from the CIS mode to the EVS mode according to the second control example of the second embodiment. [Diagram 40] 13 is a timing chart showing an example of operation at the time of transition from the CIS mode to the EVS mode according to a third control example of the second embodiment. [Diagram 41] 13 is a timing chart showing an example of operation at the time of transition from the CIS mode to the EVS mode according to the fourth control example of the second embodiment. [Diagram 42] 13 is a timing chart showing an example of operation at the time of transition from the CIS mode to the EVS mode according to the fifth control example of the second embodiment. [Diagram 43]13 is a timing chart showing an example of operation at the time of transition from the CIS mode to the EVS mode according to the sixth control example of the second embodiment. [Diagram 44] 13 is a timing chart showing an example of operation at the time of transition from the CIS mode to the EVS mode according to the seventh control example of the second embodiment. [Diagram 45] FIG. 13 is a circuit diagram illustrating a configuration example of a response circuit according to a third embodiment. [Figure 46] FIG. 11 is a circuit diagram showing a modified example of the response circuit according to the third embodiment. [Figure 47] 13 is a timing chart showing an example of an operation at the time of transition from a CIS mode to an EVS mode according to the third embodiment. [Figure 48] 13 is a flowchart showing an example of the operation of the imaging device according to the third embodiment. [Figure 49] FIG. 13 is a circuit diagram showing a configuration example of a response circuit according to a fourth embodiment. [Figure 50] FIG. 13 is a circuit diagram showing a modified example of the response circuit according to the fourth embodiment. [Figure 51] 13 is a timing chart showing an example of an operation at the time of transition from a CIS mode to an EVS mode according to the fourth embodiment. [Figure 52] 13 is a flowchart showing an example of the operation of the imaging device according to the fourth embodiment. [Diagram 53] FIG. 13 is an example of a plan view of a detection chip according to a fifth embodiment. [Figure 54] FIG. 13 is a circuit diagram illustrating an example of the configuration of a shared block according to a fifth embodiment. [Figure 55] FIG. 13 is a circuit diagram showing an example of a circuit configuration of a shared block according to a first sharing example of the fifth embodiment. [Figure 56] FIG. 13 is a circuit diagram showing an example of a circuit configuration of a shared block according to a second sharing example of the fifth embodiment. [Figure 57] FIG. 23 is a circuit diagram showing an example of a circuit configuration of a shared block according to a third sharing example of the fifth embodiment. [Figure 58] FIG. 13 is a circuit diagram illustrating a configuration example of a response circuit according to a sixth embodiment. [Figure 59]13 is a plan view showing a schematic configuration example of a detection chip in a solid-state imaging device according to the seventh embodiment. FIG. [Figure 60] FIG. 23 is a plan view showing an example layout of a shared block according to a first layout modification of the eighth embodiment. [Figure 61] FIG. 23 is a plan view showing an example layout of a shared block according to a second layout modification of the eighth embodiment. [Figure 62] FIG. 23 is a plan view showing an example layout of a shared block according to a third layout modification of the eighth embodiment. [Figure 63] FIG. 23 is a plan view showing an example layout of a shared block according to a fourth layout modification of the eighth embodiment. [Figure 64] FIG. 23 is a plan view showing an example layout of a shared block according to a fifth layout modification of the eighth embodiment. [Figure 65] FIG. 23 is a plan view showing an example layout of a shared block according to a sixth layout modification of the eighth embodiment. [Figure 66] FIG. 23 is a plan view showing an example layout of a shared block according to a seventh layout modification of the eighth embodiment. [Figure 67] FIG. 13 is a cross-sectional view showing a wiring structure according to a first example of the ninth embodiment. [Figure 68] FIG. 23 is a cross-sectional view showing a wiring structure according to a second example of the ninth embodiment. [Figure 69] FIG. 23 is a cross-sectional view showing a wiring structure according to a third example of the ninth embodiment. [Figure 70] FIG. 23 is a cross-sectional view showing a wiring structure according to a fourth example of the ninth embodiment. [Figure 71] FIG. 23 is a plan view showing an example of a wiring layout of a first wiring layer according to the ninth embodiment. [Figure 72] FIG. 23 is a plan view showing an example of a wiring layout of a second wiring layer according to the ninth embodiment. [Figure 73] FIG. 23 is a plan view showing an example of a wiring layout of a third wiring layer according to the ninth embodiment. [Figure 74] FIG. 23 is a plan view showing an example of a wiring layout of a fourth wiring layer according to the ninth embodiment. [Figure 75] 75 is a cross-sectional view showing an example of the cross-sectional structure taken along line AA' in FIGS. 71 to 74. FIG. [Figure 76] FIG. 23 is a plan view showing an example of a wiring layout of a first wiring layer according to a modified example of the ninth embodiment. [Figure 77] FIG. 23 is a diagram illustrating an example of a circuit configuration of a shared block illustrated in the tenth embodiment. [Figure 78] 23 is a diagram showing an example of connections between transfer transistors and switching transistors and respective drive lines, which are illustrated in the tenth embodiment. FIG. [Figure 79] FIG. 23 is a cross-sectional view showing an example of a wiring structure according to a tenth embodiment. [Figure 80] FIG. 2 is a plan view showing an example of a wiring layout of a first wiring layer according to the first embodiment. [Figure 81] 4 is a plan view showing an example of a wiring layout of a second wiring layer according to the first embodiment. FIG. [Figure 82] 4 is a plan view showing an example of a wiring layout of a third wiring layer according to the first embodiment. FIG. [Figure 83] 10 is a plan view showing an example of a wiring layout of a fourth wiring layer according to the first embodiment. FIG. [Figure 84] 1 is a block diagram showing an example of a schematic configuration of a vehicle control system; [Figure 85] 4 is an explanatory diagram showing an example of the installation positions of an outside-vehicle information detection unit and an imaging unit; FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, an embodiment of the present disclosure will be described in detail with reference to the drawings. In the following embodiments, the same components are designated by the same reference numerals, and duplicated descriptions will be omitted.

[0009] The present disclosure will be described in the following order. 1. First embodiment 1.1 Configuration example of imaging device 1.2 Configuration example of solid-state imaging device 1.3 Example of logarithmic response section 1.3.1 Modifications of the logarithmic response section 1.4 Pixel circuit configuration example 1.5 Basic configuration example of a response circuit 1.6 Example of detection block configuration 1.6.1 Differentiator, selector and comparator configuration examples 1.7 Row driver circuit control example 1.7.1 EVS mode 1.7.2 CIS mode 1.8 Configuration example of detection pixel and detection circuit 1.8.1 Example of operation of solid-state imaging device in EVS mode 1.9 Modifications of the detection pixel and detection circuit 1.9.1 Example of control of row driving circuit according to modified example 1.10 Dead period during mode transition 1.11 Example of response circuit configuration 1.12 Modified response circuits 1.12.1 First variant 1.12.2 Second variant 1.12.3 Third variant 1.12.4 Fourth Variation 1.12.5 Fifth Variation 1.12.6 Sixth Variation 1.12.7 Seventh Variation 1.12.8 Eighth Variation 1.13 Transition from CIS mode to EVS mode 1.14 Operational flow 1.15 Circuit sharing 1.15.1 First sharing example 1.15.2 Second sharing example 1.15.3 Third sharing example 1.15.4 Fourth sharing example 1.16 Binning mode and full pixel mode using circuit sharing 1.17 Shared Block Layout 1.17.1 First layout example 1.17.2 Second layout example 1.18 Actions and Effects 2. Second embodiment 2.1 First control example 2.2 Second control example 2.3 Third control example 2.4 Fourth control example 2.5 Fifth control example 2.6 6th control example 2.7 Seventh control example 2.8 Actions and Effects 3. Third embodiment 3.1 Example of response circuit configuration 3.1.1 Modified response circuit 3.2 Transition from CIS mode to EVS mode 3.3 Operational flow 3.4 Actions and Effects 4. Fourth embodiment 4.1 Example of response circuit configuration 4.1.1 Modified response circuit 4.2 Transition from CIS mode to EVS mode 4.3 Operational flow 4.4 Actions and Effects 5. Fifth embodiment 5.1 Example of detector chip layout 5.2 Basic configuration example of shared blocks 5.3 Circuit-Sharing Binning Mode 5.3.1 First sharing example 5.3.2 Second sharing example 5.3.3 Third sharing example 5.4 Actions and Effects 6. Sixth embodiment 6.1 Example of response circuit configuration 6.2 Actions and Effects 7. Seventh embodiment 8. Eighth embodiment 8.1 First layout variant 8.2 Second layout variant 8.3 Third layout variant 8.4 Fourth layout variant 8.5 Fifth layout variant 8.6 6th layout variant 8.7 Seventh layout variant 9. Ninth embodiment 9.1 Wiring structure example 9.2 Effects 9.3 Wiring layout examples 10. Tenth embodiment 10.1 Cross-sectional structure and wiring layout example 11. Mobile application examples

[0010] 1. First embodiment First, the first embodiment will be described in detail with reference to the drawings. The EVS can realize various operation modes in which the sensitivity and resolution to the address event change by switching the number of photoelectric conversion elements used when detecting one address event. In addition, by incorporating a read circuit for generating grayscale data from the photoelectric conversion elements into the EVS, it is also possible to realize an operation mode for generating grayscale or color image data in addition to the operation mode for detecting an address event.

[0011] However, in a conventional EVS, when switching between operating modes, the potential of the sense node in the circuit for detecting an address event may deviate from the desired range. If the potential of the sense node deviates from the normal range, the address event cannot be detected. Therefore, in a conventional EVS, there is a problem that a dead period occurs during which the address event cannot be detected until the potential of the sense node settles within the normal range.

[0012] In view of this, the present embodiment proposes a solid-state imaging device and an imaging apparatus capable of suppressing the dead period during mode switching.

[0013] 1.1 Configuration example of imaging device 1 is a block diagram showing an example of a configuration of an imaging device 100 according to a first embodiment of the present disclosure. The imaging device 100 includes an optical unit 110, a solid-state imaging device 200, a recording unit 120, and a control unit 130. The imaging device 100 is assumed to be a camera mounted on an industrial robot, an in-vehicle camera, or the like.

[0014] The optical unit 110 collects the incident light and guides it to the solid-state imaging device 200. The solid-state imaging device 200 photoelectrically converts the incident light to generate image data. The solid-state imaging device 200 performs predetermined signal processing, such as image recognition processing, on the generated image data, and outputs the processed data to the recording unit 120 via a signal line 209.

[0015] The recording unit 120 is configured with, for example, a flash memory, and records data output from the solid-state imaging device 200 and data output from the control unit 130.

[0016] The control unit 130 is configured with an information processing device such as an application processor, and controls the solid-state imaging device 200 to output image data.

[0017] 1.2 Configuration example of solid-state imaging device (Stack structure example) 2 is a diagram showing an example of a stacked structure of a solid-state imaging device 200 according to this embodiment. This solid-state imaging device 200 includes a detection chip 202 and a light-receiving chip 201 stacked on the detection chip 202. These chips are electrically connected through a connection portion such as a via. Note that, other than the via, the chips can also be connected by Cu-Cu bonding or bumps. For example, the light-receiving chip 201 may be an example of a first chip in the claims, and the detection chip 202 may be an example of a second chip in the claims.

[0018] (Photo-detector chip layout example) 3 is an example of a plan view of the light-receiving chip according to this embodiment. The light-receiving chip 201 is provided with a light-receiving section 220 and via arrangement sections 211, 212, and 213.

[0019] Vias to be connected to the detection chip 202 are arranged in the via arrangement sections 211, 212, and 213. Furthermore, in the light receiving section 220, a plurality of shared blocks 221 are arranged in a two-dimensional lattice pattern.

[0020] One or more response circuits 301 are arranged in each shared block 221. For example, four response circuits 301 are arranged in two rows and two columns in each shared block 221. These four response circuits 301 share the circuit on the detection chip 202. Details of the shared circuit will be described later. The number of response circuits 301 in the shared block 221 is not limited to four. A part or all of the circuit configuration in each response circuit 301, except for the photoelectric conversion element 311, may be arranged on the detection chip 202 side.

[0021] As described later, the response circuit 301 includes a logarithmic response unit 310 that converts the photocurrent flowing out from the photoelectric conversion element 311 into a voltage signal VPR corresponding to its logarithmic value, and a pixel circuit 370 that generates a pixel signal (corresponding to gradation data) having a voltage value corresponding to the amount of charge accumulated in the photoelectric conversion element 311.

[0022] A pixel address consisting of a row address and a column address is assigned to each of the response circuits 301. Note that the pixel in this disclosure may be a configuration based on a photoelectric conversion element 311 described later, and in this embodiment, may be, for example, a configuration called a detection pixel and / or a gradation pixel described later.

[0023] (Example of layout of detection chip) 4 is an example of a plan view of the detection chip according to this embodiment. The detection chip 202 is provided with via arrangement sections 231, 232, and 233, a signal processing circuit 240, a row driving circuit 251, a column driving circuit 252, an address event detection section 260, and a column ADC (Analog to Digital Converter) 270. Vias connected to the light receiving chip 201 are arranged in the via arrangement sections 231, 232, and 233.

[0024] The address event detection section 260 detects the presence or absence of an address event for each response circuit 301, more specifically, for each logarithmic response section 310, and generates a detection signal indicative of the detection result.

[0025] The row drive circuit 251 selects a row address and causes the address event detection section 260 to output a detection signal corresponding to the row address.

[0026] The column driving circuit 252 selects a column address and causes the address event detection section 260 to output a detection signal corresponding to the selected column address.

[0027] The signal processing circuit 240 performs a predetermined signal processing on the detection signal from the address event detection unit 260. The signal processing circuit 240 arranges the detection signals as pixel signals in a two-dimensional lattice pattern and generates image data having 2 bits of information for each pixel. The signal processing circuit 240 then performs signal processing such as image recognition processing on the image data.

[0028] The column ADC 270 includes an AD converter that corresponds one-to-one to each vertical signal line VSL provided for each response circuit 301, more specifically, for each pixel circuit 370, and performs AD (Analog to Digital) conversion on analog pixel signals input from each pixel circuit 370 via the vertical signal line VSL. The column ADC 270 then supplies the digital signals after AD conversion to the signal processing circuit 240. The signal processing circuit 240 performs predetermined image processing on image data consisting of these digital signals. The column ADC 270 may include, for example, a CDS (Correlated Double Sampling) circuit to reduce kTC noise included in the digital pixel signals.

[0029] (Example of layout of detection chip) 5 is an example of a plan view of the address event detection section 260 according to this embodiment. A plurality of detection blocks 320 are arranged in this address event detection section 260. The detection blocks 320 are arranged for each shared block 221 on the photosensor chip 201. When the number of shared blocks 221 is N (N is an integer), N detection blocks 320 are arranged. Each detection block 320 is connected to a corresponding shared block 221.

[0030] 1.3 Example of logarithmic response section 6 is a circuit diagram showing a basic configuration example of the logarithmic response unit according to the present embodiment. As shown in FIG. 6, the logarithmic response unit 310 included in the response circuit 301 includes a photoelectric conversion element 311, nMOS (n-channel Metal Oxide Semiconductor) transistors 312 and 313, and a pMOS (p-channel MOS) transistor 314. Of these, the two nMOS transistors 312 and 313, for example, constitute a logarithmic conversion circuit that converts the photocurrent flowing out of the photoelectric conversion element 311 into a voltage signal corresponding to the logarithmic value. The wiring connected to the gate of the nMOS transistor 313 and the wiring into which the photocurrent from the photoelectric conversion element 311 flows function as a sense node SN when detecting an address event. The nMOS transistor 313 may correspond to, for example, a second transistor in the claims, and the nMOS transistor 312 may correspond to, for example, a third transistor in the claims.

[0031] Furthermore, the pMOS transistor 314 operates as a load MOS transistor for the logarithmic conversion circuit configured with the two nMOS transistors 312 and 313. The photoelectric conversion element 311 and the nMOS transistors 312 and 313 may be disposed in the light receiving chip 201, for example, and the pMOS transistor 314 may be disposed in the detection chip 202.

[0032] The source of the nMOS transistor 312 is connected to the cathode of the photoelectric conversion element 311, and the drain is connected to a power supply terminal. The pMOS transistor 314 and the nMOS transistor 313 are connected in series between the power supply terminal and the ground terminal. The connection point of the pMOS transistor 314 and the nMOS transistor 313 is connected to the gate of the nMOS transistor 312 and the input terminal of the detection block 320, and functions as an output node that outputs the voltage signal VPR to the detection block 320. A predetermined bias voltage Vbias1 is applied to the gate of the pMOS transistor 314.

[0033] The drains of the nMOS transistors 312 and 313 are connected to the power supply side, and such a circuit is called a source follower. These two source followers connected in a loop convert the photocurrent from the photoelectric conversion element 311 into a voltage signal VPR corresponding to the logarithmic value of the photocurrent. In addition, the pMOS transistor 314 supplies a constant current to the nMOS transistor 313.

[0034] The ground of the light receiving chip 201 and the ground of the detection chip 202 may be separated from each other to prevent interference.

[0035] 1.3.1 Modifications of the logarithmic response section In FIG. 6, the source follower type logarithmic response unit 310 has been described, but the configuration is not limited to this. FIG. 7 is a circuit diagram showing a basic configuration example of the logarithmic response unit according to the modified example of this embodiment. As shown in FIG. 7, the logarithmic response unit 310A has a so-called gain boost type circuit configuration in which, for example, an nMOS transistor 315 connected in series between the nMOS transistor 312 and the power supply line and an nMOS transistor 316 connected in series between the nMOS transistor 313 and the pMOS transistor 314 are added to the source follower type circuit configuration exemplified in FIG. 6. The four nMOS transistors 312, 313, 315, and 316 constitute a logarithmic conversion circuit that converts, for example, the photocurrent flowing out from the photoelectric conversion element 311 into a voltage signal VPR corresponding to the logarithmic value.

[0036] In this way, even when the gain boost type logarithmic response unit 310A is used, it is possible to convert the photocurrent from the photoelectric conversion element 311 into a voltage signal VPR having a logarithmic value according to the amount of charge.

[0037] 1.4 Pixel circuit configuration example Fig. 8 is a circuit diagram showing a schematic configuration example of a pixel circuit according to this embodiment. As shown in Fig. 8, a pixel circuit 370 in a response circuit 301 includes a transfer transistor 372, a reset transistor 373, an amplification transistor 375, and a selection transistor 376. A node to which the drain of the transfer transistor 372, the source of the reset transistor 373, and the gate of the amplification transistor 375 are connected functions as a floating diffusion region (FD) 374 having a current-voltage conversion function for converting accumulated charges into a voltage according to the amount of the charges. The transfer transistor 372 may correspond to, for example, a fifth transistor in the claims.

[0038] This pixel circuit 370 shares the logarithmic response section 310 / 310A and the photoelectric conversion element 311 in the same response circuit 301, and operates as a grayscale pixel that generates a pixel signal according to the amount of light received by the photoelectric conversion element 311.

[0039] The drain of the reset transistor 373 and the drain of the amplification transistor 375 are connected to, for example, a power supply voltage VDD. However, the drain of the reset transistor 373 may be connected to, for example, a reset voltage different from the power supply voltage VDD. The source of the amplification transistor 375 is connected to the drain of the selection transistor 376, and the source of the selection transistor 376 is connected to a vertical signal line VSL for inputting an analog pixel signal to a column ADC 270 described later.

[0040] When reading out a pixel signal, a high-level transfer signal TRG is applied from the row drive circuit 251 to the gate of the transfer transistor 372. This turns on the transfer transistor 372, and the charge accumulated in the cathode of the photoelectric conversion element 311 is transferred to the floating diffusion region 374 via the transfer transistor 372. As a result, a pixel signal having a voltage value according to the amount of charge accumulated in the floating diffusion region 374 appears at the source of the amplification transistor 375. Then, by setting the selection signal SEL applied from the row drive circuit 251 to the gate of the selection transistor 376 at a high level, the pixel signal that appeared at the source of the amplification transistor 375 appears on the vertical signal line VSL.

[0041] Furthermore, when discharging the charge accumulated in the floating diffusion region 374 to reset the floating diffusion region 374, a high-level reset signal RST is applied from the row drive circuit 251 to the gate of the reset transistor 373. This causes the charge accumulated in the floating diffusion region 374 to be discharged to the power supply side via the reset transistor 373 (FD reset). At that time, by also turning on the transfer transistor 372 during the same period, it is also possible to discharge the charge accumulated in the cathode of the photoelectric conversion element 311 to the power supply side (PD reset).

[0042] In each shared block 221, the number of photoelectric conversion elements 311 simultaneously connected to the pixel circuit 370 when reading out gradation image data, i.e., the number of transfer transistors 372 turned on during the same period, is not limited to one and may be more than one. For example, in each shared block 221, when reading out high-resolution gradation image data, the transfer transistors 372 are connected to the pixel circuit 370 in sequence in a time-division manner, and when reading out by expanding the dynamic range during low illuminance or the like (during binning), two or more transfer transistors 372 may be turned on during the same period.

[0043] 1.5 Basic configuration example of a response circuit Next, a basic configuration example of the response circuit 301 including the logarithmic response unit 310 / 310A and the pixel circuit 370 will be described. Fig. 9 is a circuit diagram showing a basic configuration example of the response circuit according to the present embodiment. In the following description, a case where the logarithmic response unit 310A is used will be illustrated, but the present invention is not limited to this, and various circuits such as the logarithmic response unit 310 that convert the photocurrent from the photoelectric conversion element 311 into a voltage signal VPR of a logarithmic value corresponding to the amount of charge may be applied.

[0044] As shown in Fig. 9, the response circuit 301 according to the present embodiment has a configuration in which the logarithmic response unit 310A illustrated in Fig. 7 and the pixel circuit 370 illustrated in Fig. 8 share a photoelectric conversion element 311. However, the response circuit 301 is additionally provided with a switching transistor 317 used for switching between the EVS mode and the CIS mode. The switching transistor 317 may be, for example, an nMOS transistor. The switching transistor 317 may correspond to, for example, the fourth transistor in the claims.

[0045] In the EVS mode, a switching signal that is always at a high level is applied to the gate of the switching transistor 317 from, for example, the row drive circuit 251. On the other hand, a transfer signal TRG that is always at a low level is applied to the gate of the transfer transistor 372 from, for example, the row drive circuit 251. This forms a current path through which the photocurrent flowing out of the photoelectric conversion element 311 flows to the sense node SN side via the switching transistor 317.

[0046] In contrast, in the CIS mode, a switching signal that is always at a low level is applied to the gate of the switching transistor 317 from, for example, the row drive circuit 251. On the other hand, a transfer signal TRG that goes to a high level in response to a predetermined control operation is applied to the gate of the transfer transistor 372 from, for example, the row drive circuit 251. As a result, the charge accumulated in the photoelectric conversion element 311 is transferred to the floating diffusion region 374 of the pixel circuit 370 at a predetermined timing.

[0047] 1.6 Example of detection block configuration 10 is a block diagram showing an example of a configuration of the detection block 320 according to this embodiment. The detection block 320 includes a plurality of buffers 330, a plurality of differentiators 340, a selection section 400, a comparison section 500, and a transfer circuit 360. The buffers 330 and the differentiators 340 are arranged for each logarithmic response section 310 in the shared block 221. For example, when the shared block 221 includes four logarithmic response sections 310, four buffers 330 and four differentiators 340 are arranged.

[0048] The buffer 330 outputs a voltage signal from the corresponding logarithmic response unit 310 to the differentiator 340. The buffer 330 can improve the driving force for driving the subsequent stage. In addition, the buffer 330 can ensure isolation of noise caused by the switching operation of the subsequent stage.

[0049] The differentiator 340 obtains the amount of change in the voltage signal, i.e., the change in luminance of light incident on the photoelectric conversion element 311, as a differential signal. This differentiator 340 receives the voltage signal from the corresponding logarithmic response unit 310 via the buffer 330, and obtains the amount of change in the voltage signal by differentiation. Then, the differentiator 340 supplies the differential signal to the selection unit 400. The m-th (m is an integer from 1 to M) differential signal Sin in the detection block 320 is set as Sinm. This differentiator 340 may correspond to, for example, the first circuit in the claims.

[0050] The selection section 400 selects one of the M differential signals in accordance with a selection signal from the row drive circuit 251. The selection section 400 includes selectors 410 and 420.

[0051] M number of differential signals Sin are input to the selector 410. The selector 410 selects one of these differential signals Sin in accordance with a selection signal, and supplies it as Sout+ to the comparison unit 500. M number of differential signals Sin are also input to the selector 420. The selector 420 selects one of these differential signals Sin in accordance with the selection signal, and supplies it as Sout- to the comparison unit 500.

[0052] The comparison unit 500 compares the differential signal (i.e., the amount of change) selected by the selection unit 400 with a predetermined threshold. The comparison unit 500 supplies a signal indicating the comparison result as a detection signal to the transfer circuit 360. The comparison unit 500 may correspond to, for example, the second circuit in the claims.

[0053] The transfer circuit 360 transfers the detection signal to the signal processing circuit 240 in accordance with the column driving signal from the column driving circuit 252 .

[0054] (Example of differentiator configuration) 11 is a circuit diagram showing an example of the configuration of the differentiator 340 according to this embodiment. The differentiator 340 includes capacitors 341 and 343, an inverter 342, and a switch 344.

[0055] One end of the capacitor 341 is connected to the output terminal of the buffer 330, and the other end is connected to the input terminal of the inverter 342. The capacitor 343 is connected in parallel to the inverter 342. The switch 344 opens and closes a path connecting both ends of the capacitor 343 in accordance with a row drive signal.

[0056] The inverter 342 inverts the voltage signal input via the capacitor 341. The inverter 342 outputs the inverted signal to the selection unit 400.

[0057] When the switch 344 is turned on, a voltage signal V init is input, and the opposite side becomes a virtual ground terminal. For convenience, the potential of this virtual ground terminal is set to zero. At this time, the potential Q stored in the capacitor 341 init If the capacitance of capacitor 341 is C1, then this is expressed by the following equation (1): On the other hand, both ends of capacitor 343 are short-circuited, so that the stored charge therein is zero. Q init =C1×V init (1)

[0058] Next, switch 344 is turned off, and the voltage on the buffer 330 side of capacitor 341 changes to V after If we consider the case where the charge Q stored in the capacitor 341 becomes after is expressed by the following equation (2). Q after =C1×V after (2)

[0059] On the other hand, the charge Q2 stored in the capacitor 343 increases the output voltage to V out Then, it is expressed by the following equation (3). Q2=-C2×V out (3)

[0060] At this time, the total charge amount of capacitors 341 and 343 does not change, so the following equation (4) holds. Q init =Q after +Q2 ···(4)

[0061] By substituting equations (1) to (3) into equation (4) and rearranging it, the following equation (5) is obtained. V out =-(C1 / C2)×(V after -V init ) ···(5)

[0062] Equation (5) represents the subtraction operation of the voltage signal, and the gain of the subtraction result is C1 / C2. Since it is usually desired to maximize the gain, it is preferable to design C1 large and C2 small. On the other hand, if C2 is too small, kTC noise increases and noise characteristics may deteriorate, so the reduction in the capacitance of C2 is limited to a range in which noise can be tolerated. In addition, since a differentiator 340 is mounted for each pixel, there are area restrictions on the capacitances C1 and C2. Taking these into consideration, for example, C1 is set to a value of 20 to 200 femtofarads (fF), and C2 is set to a value of 1 to 20 femtofarads (fF).

[0063] (Example of comparison section configuration) 12 is a circuit diagram showing an example of the configuration of the comparing section 500 according to this embodiment. The comparing section 500 includes comparators 510 and 520.

[0064] The comparator 510 compares the differential signal Sout+ from the selector 410 with a predetermined upper threshold Vrefp. The comparator 510 supplies the comparison result to the transfer circuit 360 as a detection signal DET+. The detection signal DET+ indicates the presence or absence of an on-event. Here, an on-event means that the amount of change in luminance has exceeded a predetermined upper threshold.

[0065] The comparator 520 compares the differential signal Sout- from the selector 420 with a lower threshold Vrefn that is lower than the upper threshold Vrefp. The comparator 520 supplies the comparison result to the transfer circuit 360 as a detection signal DET-. The detection signal DET- indicates the presence or absence of an off-event. Here, an off-event means that the amount of change in luminance has fallen below a predetermined lower threshold. The comparison unit 500 detects the presence or absence of both an on-event and an off-event, but can also detect only one of them.

[0066] For example, the comparator 510 may be an example of a first comparator as recited in the claims, and the comparator 520 may be an example of a second comparator as recited in the claims. Also, for example, the upper threshold value may be an example of a first threshold value as recited in the claims, and the lower threshold value may be an example of a second threshold value as recited in the claims.

[0067] 1.6.1 Differentiator, selector and comparator configuration examples FIG. 13 is a circuit diagram showing an example of the configuration of the differentiator 340, the selector 410, and the comparator 510 in the detection block 320 according to the present embodiment.

[0068] The differentiator 340 includes capacitors 341 and 343, pMOS transistors 345 and 346, and an nMOS transistor 347. The pMOS transistor 345 and the nMOS transistor 347 are connected in series between a power supply terminal and a ground terminal, with the pMOS transistor 345 on the power supply side. A capacitor 341 is inserted between the gates of the pMOS transistor 345 and the nMOS transistor 347 and the buffer 330. The connection point of the pMOS transistor 345 and the nMOS transistor 347 is connected to the selector 410. With this connection configuration, the pMOS transistor 345 and the nMOS transistor 347 function as an inverter 342.

[0069] In addition, a capacitor 343 and a pMOS transistor 346 are connected in parallel between the connection point of the pMOS transistor 345 and the nMOS transistor 347 and the capacitor 341. The pMOS transistor 346 functions as a switch 344.

[0070] Further, a plurality of pMOS transistors 411 are arranged in the selector 410. The pMOS transistor 411 is arranged for each differentiator 340.

[0071] Each pMOS transistor 411 is inserted between the corresponding differentiator 340 and the comparator 510. A selection signal SEL is input to each gate of the pMOS transistor 411. The selection signal SEL of the m-th pMOS transistor 411 is designated as SELm. These selection signals SEL allow the row driving circuit 251 to control any one of the M pMOS transistors 411 to an ON state and the remaining to an OFF state. Then, the differentiated signal Sout+ is output as a selected signal to the comparator 510 via the pMOS transistor 411 in the ON state. The circuit configuration of the selector 420 is the same as that of the selector 410.

[0072] The comparator 510 includes a pMOS transistor 511 and an nMOS transistor 512. The pMOS transistor 511 and the nMOS transistor 512 are connected in series between a power supply terminal and a ground terminal. The differentiated signal Sout+ is input to the gate of the pMOS transistor 511, and the voltage of the upper limit threshold Vrefp is input to the gate of the nMOS transistor 512. A detection signal DET+ is output from the connection point of the pMOS transistor 511 and the nMOS transistor 512. The circuit configuration of the comparator 520 is the same as that of the comparator 510.

[0073] In addition, the circuit configurations of the differentiator 340, the selector 410, and the comparator 510 are not limited to those illustrated in Fig. 13 as long as they have the functions described with reference to Fig. 10. For example, nMOS transistors and pMOS transistors can be interchanged.

[0074] 1.7 Row driver circuit control example Next, a control example of the row driving circuit 251 according to this embodiment will be described. In this embodiment, the row driving circuit 251 switches between an operation mode for detecting an address event (hereinafter referred to as an EVS mode) and an operation mode for acquiring gray scale or color image data (hereinafter referred to as gradation image data) (hereinafter referred to as a CIS mode).

[0075] 1.7.1 EVS mode 14 is a timing chart showing an example of the control of the row driving circuit in the EVS mode according to the present embodiment. At timing T0, the row driving circuit 251 selects the first row by the row driving signal L1 and drives the differentiator 340 of that row. The capacitor 343 in the differentiator 340 of the first row is initialized by this row driving signal L1. In addition, the row driving circuit 251 selects the upper left corner of the 2 rows x 2 columns in the shared block 221 for a certain period of time by the selection signal SEL1, and drives the selection unit 400. As a result, the presence or absence of an address event in the odd-numbered columns of the first row is detected.

[0076] Next, at timing T1, the row drive circuit 251 drives the differentiator 340 in the first row again by the row drive signal L1. The row drive circuit 251 also selects the top right corner of the 2 rows x 2 columns in the shared block 221 for a certain period by the selection signal SEL2. This allows the presence or absence of an address event in the even columns of the first row to be detected.

[0077] At timing T2, the row drive circuit 251 drives the differentiator 340 in the second row by the row drive signal L2. The capacitor 343 in the differentiator 340 in the second row is initialized by this row drive signal L2. In addition, the row drive circuit 251 selects the bottom left of the 2 rows x 2 columns in the shared block 221 for a certain period of time by the selection signal SEL3. This allows the presence or absence of an address event in the odd columns of the second row to be detected.

[0078] Next, at timing T3, the row drive circuit 251 drives the differentiator 340 in the second row again by the row drive signal L2. The row drive circuit 251 also selects the lower right corner of the 2 rows x 2 columns in the shared block 221 for a certain period by the selection signal SEL4. This allows the presence or absence of an address event in the even columns of the second row to be detected.

[0079] Similarly, the row driving circuit 251 sequentially selects rows in which the response circuits 301 are arranged, and drives the selected rows with a row driving signal. Each time the row driving circuit 251 selects a row, it sequentially selects each of the detection pixels 300 in the shared block 221 of the selected row with a selection signal. For example, if 2 rows x 2 columns of detection pixels 300 are arranged in the shared block 221, each time a row is selected, odd and even columns in that row are selected in turn.

[0080] The row driving circuit 251 can also sequentially select the rows in which the shared blocks 221 are arranged (in other words, two rows of the response circuits 301). In this case, each time a row is selected, four detection pixels in the shared blocks 221 of that row are selected in sequence.

[0081] 1.7.2 CIS mode Fig. 15 is a timing chart showing an example of control of the row drive circuit in the CIS mode according to this embodiment. As shown in Fig. 15, the row drive circuit 251 first executes resetting of the charge accumulated in the photoelectric conversion element 311. Specifically, the row drive circuit 251 sets the reset signal RST and the transfer signal TRG to high level during the period from timing T11 to T12, thereby discharging the charge accumulated in the photoelectric conversion element 311 to the power supply (VDD) side via the transfer transistor 372 and the reset transistor 373 (PD reset).

[0082] Next, for example, at timing T13, the row driving circuit 251 sets the selection signal SEL to high level, and sets the reset signal RST to high level during the period from timing T13 to T14. This causes the charge accumulated in the floating diffusion region 374 to be discharged to the power supply (VDD) side via the reset transistor 373, and the floating diffusion region 374 is reset (FD reset).

[0083] In the subsequent period from timing T14 to T15, the potential appearing on the vertical signal line VSL in a state in which the floating diffusion region 374 is reset is read out as a pixel signal of a reset level (also called a reset signal) by the column ADC 270 (reset level readout). The readout reset signal is used, for example, in the CDS process in the column ADC 270.

[0084] Next, the row driving circuit 251 sets the transfer signal TRG to high level during the period from timing T15 to T16. This causes the charge accumulated in the photoelectric conversion element 311 to be transferred to the floating diffusion region 374 via the transfer transistor 372. Note that the period from when the reset signal RST falls at timing T12 to when the transfer signal TRG rises at timing T15 is an accumulation period (also referred to as an exposure period) during which the charge generated by photoelectric conversion is accumulated in the photoelectric conversion element 311.

[0085] In the subsequent period from timing T16 to T17, in a state where the charge transferred from the photoelectric conversion element 311 is accumulated in the floating diffusion region 374, in other words, in a state where a voltage based on the charge amount of the charge transferred from the photoelectric conversion element 311 is applied to the gate of the amplification transistor 375, the potential appearing on the vertical signal line VSL is read out as a pixel signal of a signal level by the column ADC 270. Note that the column ADC 270 performs CDS processing on the pixel signal read out in the period from timing T16 to T17 using the reset signal read out earlier, thereby generating a pixel signal from which kTC noise and the like have been removed.

[0086] 1.8 Configuration example of detection pixel and detection circuit 16 is a block diagram showing an example of the configuration of a detection pixel 300 and a detection circuit 305 according to this embodiment. Of the detection block 320 shared by a plurality of logarithmic response units 310 in the shared block 221, a circuit consisting of a selection unit 400, a comparison unit 500, and a transfer circuit 360 is defined as the detection circuit 305. Also, a circuit consisting of the logarithmic response unit 310, a buffer 330, and a differentiator 340 is defined as the detection pixel 300. As illustrated in the figure, the detection circuit 305 is shared by a plurality of detection pixels 300.

[0087] Each of the detection pixels 300 that share the detection circuit 305 generates a voltage signal corresponding to the logarithmic value of the photocurrent. Then, each of the detection pixels 300 outputs a differential signal Sin indicating the amount of change in the voltage signal in accordance with the row drive signal to the detection circuit 305. In each of the detection pixels 300, the voltage signal corresponding to the logarithmic value is generated by the logarithmic response unit 310, and the differential signal is generated by the differentiator 340.

[0088] Selection signals such as selection signals SEL1 and SEL2 are commonly input to the selectors 410 and 420 in the detection circuit 305. The detection circuit 305 selects a differential signal (i.e., an amount of change) of a detection pixel indicated by the selection signal from among the multiple detection pixels 300, and detects whether the amount of change exceeds a predetermined threshold. Then, the detection circuit 305 transfers the detection signal to the signal processing circuit 240 in accordance with the column drive signal. In the detection circuit 305, the differential signal is selected by the selection unit 400, and the comparison with the threshold is performed by the comparison unit 500. The detection signal is also transferred by the transfer circuit 360.

[0089] In a typical DVS, the comparison unit 500 and the transfer circuit 360 are arranged for each detection pixel together with the logarithmic response unit 310, the buffer 330, and the differentiator 340. In contrast, in the above-described configuration in which the detection circuit 305 including the comparison unit 500 and the transfer circuit 360 is shared by a plurality of detection pixels 300, the circuit scale of the solid-state imaging device 200 can be reduced compared to a case in which the detection circuit 305 is not shared. This facilitates miniaturization of pixels.

[0090] In particular, when a stacked structure is adopted, in a typical configuration in which the detection circuit 305 is not shared, the circuit scale of the detection chip 202 is larger than that of the light receiving chip 201. For this reason, the circuit on the detection chip 202 side limits the pixel density, making it difficult to miniaturize the pixels. However, by having multiple detection pixels 300 share the detection circuit 305, the circuit scale of the detection chip 202 can be reduced, making it easy to miniaturize the pixels.

[0091] Although the buffer 330 is arranged for each detection pixel 300, the present invention is not limited to this configuration, and a configuration without the buffer 330 may also be used.

[0092] In addition, the photoelectric conversion element 311 and the nMOS transistors 312 and 313 of the logarithmic response unit 310 are arranged on the light receiving chip 201, and the pMOS transistor 314 and subsequent transistors are arranged on the detection chip 202, but this configuration is not limited to this. For example, only the photoelectric conversion element 311 can be arranged on the light receiving chip 201, and the rest can be arranged on the detection chip 202. In addition, only the logarithmic response unit 310 can be arranged on the light receiving chip 201, and the buffer 330 and subsequent transistors can be arranged on the detection chip 202. In addition, the logarithmic response unit 310 and the buffer 330 can be arranged on the light receiving chip 201, and the differentiator 340 and subsequent transistors can be arranged on the detection chip 202. In addition, the logarithmic response unit 310, the buffer 330, and the differentiator 340 can be arranged on the light receiving chip 201, and the detection circuit 305 and subsequent transistors can be arranged on the detection chip 202. In addition, up to the selection unit 400 can be arranged on the light receiving chip 201, and the comparison unit 500 and subsequent transistors can be arranged on the detection chip 202.

[0093] 1.8.1 Example of operation of solid-state imaging device in EVS mode 17 is a flowchart showing an example of the operation of the solid-state imaging device in the EVS mode according to the present embodiment. This operation is started, for example, when a predetermined application for detecting the presence or absence of an address event is executed.

[0094] 17, in the EVS mode, the row driving circuit 251 selects any one of the rows (step S901). Then, in the selected row, the row driving circuit 251 selects and drives any one of the detection pixels 300 in each shared block 221 (step S902). The detection circuit 305 detects the presence or absence of an address event in the selected detection pixel 300 (step S903). After step S903, the solid-state imaging device 200 repeatedly executes steps S901 and onward.

[0095] In this manner, in this embodiment, the detection circuit 305 for detecting the presence or absence of an address event is shared by a plurality of detection pixels 300, so that the circuit size can be reduced compared to a case in which the detection circuit 305 is not shared. This makes it easier to miniaturize the detection pixels 300.

[0096] 1.9 Modifications of the detection pixel and detection circuit In the above-described first embodiment, the solid-state imaging device 200 selects the detection pixels 300 one by one and simultaneously detects an on-event and an off-event for the detection pixels. However, the solid-state imaging device 200 can also select two detection pixels and detect an on-event for one of them and an off-event for the other. The solid-state imaging device 200 of this modification of the first embodiment differs from the first embodiment in that it detects an on-event for one of the two detection pixels and detects an off-event for the other.

[0097] 18 is a block diagram showing an example of the configuration of the detection pixel 300 and the detection circuit 305 in a modification of the present embodiment. The detection circuit 305 in this modification of the first embodiment differs from the first embodiment in that a selection signal such as selection signals SEL1p and SEL2p is input to the selector 410, and a selection signal such as selection signals SEL1n and SEL2n is input to the selector 420. In the modification of the first embodiment, two detection pixels 300 are selected, and the selector 410 selects one of the differential signals according to the selection signals SEL1p and SEL2p. At the same time, the selector 420 selects the other differential signal according to the selection signals SEL1n and SEL2n.

[0098] 1.9.1 Example of control of row driving circuit according to modified example 19 is a timing chart showing an example of control of the row driving circuit 251 in the modified example of this embodiment. At timings T0 to T2, it is assumed that two detection pixels are selected: a detection pixel 300 that outputs a differential signal Sin1, and a detection pixel 300 that outputs a differential signal Sin2. At timings T0 to T1, the row driving circuit 251 sets the selection signals SEL1p and SEL2n to a high level, and sets the selection signals SEL2p and SEL1n to a low level. As a result, an ON event is detected for the pixel corresponding to the differential signal Sin1, and an OFF event is detected for the pixel corresponding to the differential signal Sin2.

[0099] Then, in the period from timing T1 to T2, the row driving circuit 251 sets the selection signals SEL1p and SEL2n to a low level and sets the selection signals SEL2p and SEL1n to a high level, thereby detecting an ON event for the pixel corresponding to the differentiated signal Sin2 and detecting an OFF event for the pixel corresponding to the differentiated signal Sin1.

[0100] In this way, according to the modified example of this embodiment, an ON event is detected for one of the two detection pixels and an OFF event is detected for the other, so that an ON event and an OFF event can be detected at the same time and in parallel in space.

[0101] 1.10 Dead period during mode transition 20 is a waveform diagram for explaining the dead period during mode transition. In the above-mentioned configuration, in the CIS mode, the cathode potential of the photoelectric conversion element 311 is reset to a potential higher than the potential of the sense node SN (for example, 0.5V (volts)) similarly to the floating diffusion region 374 (PD reset). Here, the amount of charge generated in the photoelectric conversion element 311 is small during low illuminance. Therefore, even at the end of the CIS mode, the cathode potential of the photoelectric conversion element 311 is maintained at a potential higher than the potential of the sense node SN (hereinafter referred to as the SN potential). When the switching transistor 317 is turned on by transitioning to the EVS mode in this state, the cathode potential of the photoelectric conversion element 311, which is higher than the SN potential, is short-circuited with the sense node SN, thereby causing the SN potential to rise. 20, the nMOS transistors 312 and 315 are turned off, and the voltage level of the voltage signal VPR remains stuck at the ground potential (GND), resulting in no reaction to the photocurrent flowing out of the photoelectric conversion element 311, in other words, a dead period occurs during which an address event cannot be detected. This dead period continues until the SN potential settles to a predetermined potential, and can be as long as about 100 ms (milliseconds), for example.

[0102] Therefore, in this embodiment, when the mode transition from the CIS mode to the EVS mode occurs, the SN potential is fixed to a voltage VX that is lower than the SN potential during normal operation. This makes it possible to suppress an unintended rise in the SN potential even if the switching transistor 317 is transitioned to the on state, and therefore makes it possible to prevent the nMOS transistors 312 and 315 from being turned off. As a result, it becomes possible to suppress the dead period caused by the voltage level of the voltage signal VPR sticking to the ground potential (GND).

[0103] 1.11 Example of response circuit configuration Fig. 21 is a circuit diagram showing a configuration example of a response circuit according to this embodiment. As shown in Fig. 21, the response circuit 301A according to this embodiment has a configuration similar to that of the response circuit 301 described above with reference to Fig. 9, in which a control transistor 318 is connected to a sense node SN. The control transistor 318 may be, for example, an nMOS transistor. The control transistor 318 may correspond to, for example, the first transistor in the claims.

[0104] As described above, the drain of the control transistor 318 is connected to the sense node SN, and the source is connected to a potential equal to or higher than the reference potential and lower than the power supply voltage VDD, for example, a fixed potential VX. The reference potential may be, for example, a well potential VSS or a ground potential (GND) of an element isolation region of a semiconductor substrate on which the photoelectric conversion element 311 is formed. The well potential VSS of the element isolation region may be a negative potential. In this case, the voltage value of the fixed potential VX is, for example, a voltage value equal to or higher than the anode potential (for example, VSS or GND) of the photoelectric conversion element 311 and equal to or lower than the potential VSN of the sense node SN during normal operation. The potential VSN of the sense node SN during normal operation may be the potential VSN of the sense node SN during normal operation of the logarithmic response unit 310A, for example, a gate-source voltage VGS of the nMOS transistor 313 determined by the bias current BIAS flowing through the two nMOS transistors 313 and 316 and the threshold voltage of the nMOS transistor 313.

[0105] A control signal MST for controlling the on / off of the control transistor 318 is applied to the gate of the control transistor 318 from, for example, the row drive circuit 251.

[0106] In such a configuration, when transitioning from the CIS mode to the EVS mode, a high-level control signal MST is applied to the gate of the control transistor 318. This causes the control transistor 318 to turn on, and the SN potential of the sense node SN is controlled to a fixed potential VX, so that even if the switching transistor 317 is transitioned to the on state, it is possible to suppress an unintended rise in the SN potential. As a result, it is possible to prevent the nMOS transistors 312 and 315 from turning off, and it is possible to suppress a dead period caused by the voltage level of the voltage signal VPR sticking to the ground potential (GND).

[0107] 1.12 Modified response circuits Next, some examples of modified examples of the response circuit according to the present embodiment will be described.

[0108] 1.12.1 First variant Fig. 22 is a circuit diagram showing a configuration example of a response circuit according to a first modification of this embodiment. As shown in Fig. 22, the response circuit 301B according to the first modification has a configuration similar to that of the response circuit 301A shown in Fig. 21, in which the drain of the control transistor 318 is connected to the drain of the transfer transistor 372 in the pixel circuit 370.

[0109] In such a configuration, when transitioning from the CIS mode to the EVS mode, the switching transistor 317 is turned on with the control transistor 318 and the transfer transistor 372 turned on. As a result, a fixed potential VX is applied to the sense node SN via the control transistor 318, the transfer transistor 372, and the switching transistor 317, so that the SN potential of the sense node SN is controlled to the fixed potential VX. That is, even if the switching transistor 317 is transitioned to the on state, it is possible to suppress an unintended rise in the SN potential.

[0110] 1.12.2 Second variant Fig. 23 is a circuit diagram showing a configuration example of a response circuit according to a second modification of this embodiment. As shown in Fig. 23, the response circuit 301C according to the second modification has a configuration similar to that of the response circuit 301B illustrated in Fig. 22, in which a control transistor 319 is further connected between the drain of the control transistor 318 and the transfer transistor 372 and the sense node SN. The control transistor 319 may correspond to, for example, the sixth transistor in the claims.

[0111] The source of the control transistor 319 is connected to the drains of the control transistor 318 and the transfer transistor 372, and the drain is connected to the sense node SN. In addition, a control signal MSM is applied to the gate of the control transistor 319 from the row drive circuit 251, for example.

[0112] In such a configuration, when transitioning from the CIS mode to the EVS mode, the control transistors 318 and 319 are turned on. As a result, a fixed potential VX is applied to the sense node SN via the control transistors 318 and 319, so that the SN potential of the sense node SN is controlled to the fixed potential VX. As a result, even if the switching transistor 317 is transitioned to the on state, it is possible to suppress an unintended rise in the SN potential.

[0113] 1.12.3 Third variant Fig. 24 is a circuit diagram showing a configuration example of a response circuit according to a third modification of this embodiment. As shown in Fig. 24, a response circuit 301D according to the third modification has a configuration similar to that of the response circuit 301A shown in Fig. 21, in which the drain of the transfer transistor 372 and the drain of the switching transistor 317 are connected via a control transistor 319.

[0114] The source of the control transistor 319 is connected to the drain of the transfer transistor 372, and the drain is connected to the drain of the switching transistor 317. In addition, a control signal MSM is applied to the gate of the control transistor 319 from the row drive circuit 251, for example.

[0115] In such a configuration, when transitioning from the CIS mode to the EVS mode, the control transistor 318 is turned on, as in the first modification. This causes a fixed potential VX to be applied to the sense node SN via the control transistor 318, so that the SN potential of the sense node SN is controlled to the fixed potential VX. As a result, even if the switching transistor 317 is transitioned to the on state, it is possible to suppress an unintended rise in the SN potential.

[0116] 1.12.4 Fourth Variation Fig. 25 is a circuit diagram showing a configuration example of a response circuit according to a fourth modification of this embodiment. As shown in Fig. 25, a response circuit 301E according to the fourth modification has a configuration similar to that of the response circuit 301 shown in Fig. 9, but uses a fixed potential VX instead of a power supply voltage VDD as a reset voltage (FD reset and PD reset voltage) for the pixel circuit 370.

[0117] In such a configuration, when transitioning from the CIS mode to the EVS mode, the reset transistor 373 and the transfer transistor 372 are turned on. As a result, a fixed potential VX is applied to the sense node SN via the reset transistor 373 and the transfer transistor 372, so that the SN potential of the sense node SN is controlled to the fixed potential VX. As a result, even if the switching transistor 317 is transitioned to the on state, it is possible to suppress an unintended rise in the SN potential.

[0118] 1.12.5 Fifth Variation Fig. 26 is a circuit diagram showing a configuration example of a response circuit according to a fifth modification of this embodiment. As shown in Fig. 26, a response circuit 301F according to the fifth modification has a configuration similar to that of the response circuit 301E illustrated in Fig. 25, in which the drain of the transfer transistor 372 and the drain of the switching transistor 317 are connected via a control transistor 319.

[0119] In such a configuration, when transitioning from the CIS mode to the EVS mode, the reset transistor 373 and the control transistor 319 are turned on. As a result, a fixed potential VX is applied to the sense node SN via the reset transistor 373 and the control transistor 319, so that the SN potential of the sense node SN is controlled to the fixed potential VX. As a result, even if the switching transistor 317 is transitioned to the on state, it is possible to suppress an unintended rise in the SN potential.

[0120] 1.12.6 Sixth Variation Fig. 27 is a circuit diagram showing a configuration example of a response circuit according to a sixth modified example of this embodiment. As shown in Fig. 27, a response circuit 301G according to the sixth modified example has a configuration similar to that of the response circuit 301A shown in Fig. 21, except that a control transistor 318 is connected to the cathode of the photoelectric conversion element 311 instead of the sense node SN.

[0121] In such a configuration, when transitioning from the CIS mode to the EVS mode, the switching transistor 317 is turned on with the control transistor 318 turned on. As a result, a fixed potential VX is applied to the sense node SN via the control transistor 318 and the switching transistor 317, so that the SN potential of the sense node SN is controlled to the fixed potential VX. As a result, even if the switching transistor 317 is transitioned to the on state, it is possible to suppress an unintended rise in the SN potential.

[0122] 1.12.7 Seventh Variation Fig. 28 is a circuit diagram showing a configuration example of a response circuit according to a seventh modification of this embodiment. As shown in Fig. 28, the response circuit 301H according to the seventh modification has a configuration similar to that of the response circuit 301C illustrated in Fig. 23, in which a transfer transistor 372 and a switching transistor 317 are connected in series, and a sense node SN is connected to the cathode of the photoelectric conversion element 311 via a control transistor 319 and the switching transistor 317.

[0123] In such a configuration, when transitioning from the CIS mode to the EVS mode, the control transistors 318 and 319 are turned on. As a result, a fixed potential VX is applied to the sense node SN via the control transistors 318 and 319, so that the SN potential of the sense node SN is controlled to the fixed potential VX. As a result, even if the switching transistor 317 is transitioned to the on state, it is possible to suppress an unintended rise in the SN potential.

[0124] 1.12.8 Eighth Variation Fig. 29 is a circuit diagram showing a configuration example of a response circuit according to an eighth modification of this embodiment. As shown in Fig. 29, the response circuit 301I according to the eighth modification has a configuration similar to that of the response circuit 301F illustrated in Fig. 26, but similar to the seventh modification, the transfer transistor 372 and the switching transistor 317 are connected in series, and the sense node SN is connected to the cathode of the photoelectric conversion element 311 via the control transistor 319 and the switching transistor 317.

[0125] In such a configuration, when transitioning from the CIS mode to the EVS mode, the reset transistor 373, the transfer transistor 372, and the control transistor 319 are turned on. As a result, a fixed potential VX is applied to the sense node SN via the reset transistor 373, the transfer transistor 372, and the control transistor 319, so that the SN potential of the sense node SN is controlled to the fixed potential VX. As a result, even if the switching transistor 317 is transitioned to the on state, it is possible to suppress an unintended rise in the SN potential.

[0126] 1.13 Transition from CIS mode to EVS mode Next, the operation when transitioning from the CIS mode to the EVS mode will be described. In this description, the response circuit 301A illustrated in Fig. 21 will be cited for explanation, but the modification can be operated in the same manner by appropriately controlling the control transistor 319, the transfer transistor 372, the reset transistor 373, etc. in conjunction with the control of the control transistor 318.

[0127] Fig. 30 is a timing chart showing an example of an operation at the time of transition from the CIS mode to the EVS mode according to the present embodiment. As shown in Fig. 30, in the transition from the CIS mode to the EVS mode, first, in synchronization with the end timing t0 of the CIS mode, the supply of control signals (TRG, SEL, RST) from the row driving circuit 251 to the transfer transistor 372, the selection transistor 376, and the reset transistor 373 constituting the pixel circuit 370 is stopped.

[0128] Next, in the transition period (t0 to t4) from the CIS mode to the EVS mode, the row drive circuit 251 sets the control signal MST to a high level at timing t1 to turn on the control transistor 318. This fixes the SN potential of the sense node SN to a fixed potential VX. Next, the row drive circuit 251 sets the switching signal TGD to a high level at timing t2 to turn on the switching transistor 317. At this time, since the SN potential of the sense node SN is fixed to the fixed potential VX, it is possible to prevent the voltage level of the voltage signal VPR from being stuck to the ground potential (GND).

[0129] After that, at timing t3, the row drive circuit 251 turns off the control transistor 318. Then, the row drive circuit 251 executes the EVS mode from timing t4 onwards.

[0130] 1.14 Operational flow Next, an operation example of the imaging device 100 according to this embodiment will be described. Fig. 31 is a flowchart showing an operation example of the imaging device according to this embodiment. In the following description, a case where the response circuit 301A is incorporated in the shared block 221X is illustrated, but the present invention is not limited to this, and the response circuit 301A may be replaced with response circuits 301B to 301I according to modified examples. The operation shown in Fig. 31 may be ended by an interrupt operation such as a shutdown.

[0131] 31, in this operation, when the imaging device 100 is started, for example, first, the EVS mode is executed in the solid-state imaging device 200. In the EVS mode, as described above, an on-event or an off-event is detected based on the amount of change in the photocurrent flowing out from the photoelectric conversion element 311, and thus the movement of an object that has entered the angle of view of the imaging device 100 is detected (step S101). Note that this movement detection may be executed by, for example, the signal processing circuit 240 in the solid-state imaging device 200, or may be executed by the control unit 130 connected to the solid-state imaging device 200, or a server (including a cloud server, etc.) connected to the imaging device 100 via a predetermined network.

[0132] Next, it is determined whether or not the movement of the object is detected in step S101 (step S102). If the movement of the object is not detected (NO in step S102), the imaging device 100 continues the EVS mode.

[0133] On the other hand, when the movement of the object is detected (YES in step S102), the EVS mode is switched to the CIS mode. During this transition period, the row driving circuit 251 first switches off the pMOS transistor 314 in the response circuit 301, thereby switching off the bias current BIAS flowing through the nMOS transistors 313 and 316 of the logarithmic response unit 310A (step S103). Next, the row driving circuit 251 switches off the switching transistor (also called the TGD gate) 317 (step S104). This stops the supply of photocurrent to the logarithmic response unit 310A, and the mode is switched to the CIS mode.

[0134] In the CIS mode, the row driving circuit 251 drives the pixel circuits 370 to generate frame data capturing an image of an object (step S105). Then, a recognition process is performed on the generated frame data to identify the captured object (step S106). The object recognition process may be performed on multiple frames instead of one frame. The object recognition process may be performed by, for example, the signal processing circuit 240 in the solid-state imaging device 200, or may be performed by the control unit 130 connected to the solid-state imaging device 200, or a server (including a cloud server, etc.) connected to the imaging device 100 via a predetermined network.

[0135] When the identification of the object is completed in this manner, the solid-state imaging device 200 executes a transition from the CIS mode to the EVS mode. During this transition period, first, the row driving circuit 251 turns on the control transistor (also called the MST gate) 318 (step S107). This controls the SN potential of the sense node SN of the logarithmic response unit 310A to a fixed potential VX. Next, the row driving circuit 251 turns on the switching transistor 317 (step S108), turns off the control transistor 318 (step S109), and then turns on the pMOS transistor 314 in the response circuit 301 to pass a bias current BIAS through the nMOS transistors 313 and 316 of the logarithmic response unit 310A (step S110). This starts the supply of a photocurrent to the logarithmic response unit 310A, and transitions to the EVS mode.

[0136] 1.15 Circuit sharing In the above description, a configuration has been exemplified in which each of the multiple response circuits 301X (the response circuits 301X may be any of the above-mentioned response circuits 301A to 301I and the later-described response circuits 301J to 301N) belonging to one shared block 221 includes one logarithmic response unit 310 / 310A and one pixel circuit 370. However, some of the circuits constituting the response circuit 301X may be shared with other response circuits 301X. Below, several examples of circuit configurations of a shared block in which some of the circuit configurations are shared between the multiple response circuits 301X will be described.

[0137] 1.15.1 First sharing example Fig. 32 is a circuit diagram showing an example of a circuit configuration of a shared block according to a first sharing example. In the first sharing example, a case is shown in which a part of a pixel circuit 370 (specifically, a circuit configuration excluding a photoelectric conversion element 311 and a transfer transistor 372) is shared in a shared block 221 including four response circuits 301A as shown in Fig. 21. In the following description, the circuit configuration excluding the photoelectric conversion element 311 and the transfer transistor 372 in the pixel circuit 370, that is, the circuit configuration including a reset transistor 373, a floating diffusion region 374, an amplification transistor 375, and a selection transistor 376, is referred to as a readout circuit 370a.

[0138] 32, in the shared block 221A according to the first sharing example, the drains of the transfer transistors 372 in the response circuits 301A1 to 301A4 are connected to a common line 3101. A readout circuit 370a is connected to the common line 3101. This readout circuit 370a is shared by the plurality of response circuits 301A1 to 301A4 via the common line 3101. That is, each of the four pixel circuits 370 in each shared block 221A is composed of the photoelectric conversion element 311 and the transfer transistor 372 of each of the response circuits 301A1 to 301A4, and the shared readout circuit 370a.

[0139] 1.15.2 Second sharing example Fig. 33 is a circuit diagram showing a circuit configuration example of a shared block according to a second sharing example. Note that the second sharing example shows a case where the readout circuit 370a of the pixel circuit 370 is shared in the shared block 221 including four response circuits 301C shown in Fig. 23.

[0140] 33, in the shared block 221C according to the second sharing example, similarly to the shared block 221A according to the first sharing example, the drains of the transfer transistors 372 in the response circuits 301C1 to 301C4 are connected to a common line 3101, and a readout circuit 370a is connected to this common line 3101. As a result, each of the four pixel circuits 370 in each shared block 221C is composed of the photoelectric conversion element 311 and the transfer transistor 372 of each of the response circuits 301C1 to 301C4, and the shared readout circuit 370a.

[0141] 1.15.3 Third sharing example Fig. 34 is a circuit diagram showing a circuit configuration example of a shared block according to a third sharing example. Note that the third sharing example shows a case where the readout circuit 370a of the pixel circuit 370 is shared in the shared block 221 including four response circuits 301D shown in Fig. 24.

[0142] 34, in the shared block 221D according to the third sharing example, similarly to the shared block 221A according to the first sharing example, the drains of the transfer transistors 372 in the response circuits 301D1 to 301D4 are connected to a common line 3101, and a readout circuit 370a is connected to this common line 3101. As a result, each of the four pixel circuits 370 in each shared block 221D is composed of the photoelectric conversion element 311 and the transfer transistor 372 of each of the response circuits 301D1 to 301D4, and the shared readout circuit 370a.

[0143] 1.15.4 Fourth sharing example 35 is a circuit diagram showing a circuit configuration example of a shared block according to a fourth sharing example. In the fourth sharing example, a control transistor 318 is further shared in the second sharing example shown in FIG.

[0144] 35, in the shared block 221CC according to the fourth sharing example, in a configuration similar to that of the shared block 221C according to the second sharing example, the control transistors 318 in the response circuits 301C1-301C4 are omitted, and instead, the source of one control transistor 318 is connected to a common line 3101. As a result, the control transistor 318 is shared by the logarithmic response units 310A of the response circuits 301B1-301B4.

[0145] As described above, by sharing some circuits among multiple response circuits 301X, it is possible to reduce the area occupied by the light receiving chip 201 and / or the detection chip 202, thereby achieving effects such as miniaturization of the solid-state imaging device 200 and improved sensitivity by increasing the area of ​​the photoelectric conversion element 311.

[0146] 1.16 Binning mode and full pixel mode using circuit sharing It should be noted that the shared read circuit 370a and / or control transistor 318 may be used in different periods in each response circuit 301X or may be used for the same period.

[0147] For example, in the CIS mode, when the readout circuit 370a is used for different periods in each response circuit 301X, each shared block 221X (the shared block 221X may be any of the shared blocks 221A to 221D described above and shared blocks obtained by applying other response circuits 301X to the shared blocks 221A to 221D) is driven in an operating mode (hereinafter referred to as the full pixel mode) in which each shared block has four pixel circuits 370.

[0148] On the other hand, in the CIS mode, when the readout circuit 370a is used in each response circuit 301X for the same period, each shared block 221X is driven in an operation mode (hereinafter referred to as binning mode) in which each shared block 221X has one pixel circuit 370. In the binning mode, it is possible to collect charges generated in a plurality of photoelectric conversion elements 311 in one floating diffusion region 374, so that it is possible to expand the dynamic range when reading out grayscale data (pixel signals), thereby making it possible to improve image quality at low illuminance, for example.

[0149] Moreover, the full pixel mode and the binning mode can be applied not only to the CIS mode but also to the EVS mode.

[0150] For example, in the first and fourth sharing examples among the sharing examples described above, during EVS mode, the transfer transistor 372 and switching transistor 317 in response circuit 301A1 / 301B1 are turned on, and the transfer transistors 372 in the other response circuits 301A2 / 301B1 to 301A4 / 301B4 are turned on and the switching transistors 317 are turned off, making it possible to aggregate the photocurrent flowing out from the photoelectric conversion elements 311 of each of the response circuits 301A1 / 301B1 to 301A4 / 301B4 in the logarithmic response section 310A of the response circuit 301A1 / 301B1 (binning mode).

[0151] In addition, in the second and third sharing examples of the sharing examples described above, during EVS mode, the control transistor 319 and switching transistor 317 in response circuit 301C1 / 301D1 are turned on, the transfer transistors 372 in the other response circuits 301C2 / 301D2 to 301C4 / 301D4 are turned on, and the control transistor 319 and switching transistor 317 are turned off, making it possible to concentrate the photocurrent flowing out from the photoelectric conversion element 311 of each response circuit 301C1 / 301D1 to 301C4 / 301D4 in the logarithmic response section 310A of response circuit 301C1 / 301D1.

[0152] In this way, by collecting the photocurrents flowing from each photoelectric conversion element 311 in one logarithmic response unit 310 / 310A, it is possible to increase the amount of photocurrent flowing at one time, and therefore to expand the dynamic range when detecting an address event. This makes it possible to improve the sensitivity to address events, for example, in low illuminance conditions.

[0153] In addition, the full pixel mode and the binning mode in each of the CIS mode and the EVS mode may be appropriately switched and executed. Even in this case, when transitioning from the full pixel mode to the binning mode or from the binning mode to the full pixel mode, the SN potential of the sense node SN may swing, so it is considered effective to fix the SN potential to a fixed potential VX to shorten the settling time at the time of mode transition, as in the above-mentioned transition from the CIS mode to the EVS mode.

[0154] 1.17 Shared Block Layout The layout of the light receiving section 220 of the shared block 221X according to this embodiment will be described below with reference to an example. For convenience of explanation, a schematic layout example of the element forming surface side of the semiconductor substrate on which the photoelectric conversion element 311 is formed is shown below. For clarity, the arrangement of each transistor is shown by the position of the gate electrode.

[0155] 1.17.1 First layout example In the first layout example, a layout example of the shared block 221A according to the first sharing example will be described. FIG. 36 is a plan view showing a layout example of the shared block according to the first layout example. As shown in FIG. 36, the pixel area 10 in which one response circuit 301A is arranged in the light receiving chip 201 is partitioned by a pixel separation section 12 extending in the row direction and the column direction. Each of the response circuits 301A1 to 301A4 includes a photoelectric conversion element 311, a plurality of nMOS transistors 312, 313, 315, and 316 arranged along the outer periphery of the pixel area, in other words, arranged so as to surround the photoelectric conversion element 311 from at least two directions (three directions in FIG. 36), a switching transistor 317, and a control transistor 318. In addition, in each of the four pixel areas 10, one of the three transistors (373, 375, 376) constituting the readout circuit 370a, or a dummy transistor 972 is also arranged. The dummy transistor 972 is a transistor that is not included in the response circuit 301A, and may be, for example, an electrically floating transistor.

[0156] 36, the four nMOS transistors 312, 313, 315, and 316 in each logarithmic response unit 310A are arranged on one side of the photoelectric conversion element 311. By gathering the nMOS transistors 312, 313, 315, and 316 constituting the logarithmic response unit 310A on one side of the photoelectric conversion element 311 in this way, it is possible to reduce the time constant formed by the wiring constituting the logarithmic conversion circuit, and therefore it is possible to improve the response speed of the logarithmic conversion circuit.

[0157] 1.17.2 Second layout example In the second layout example, a layout example of a shared block 221CC according to the fourth sharing example will be described. Fig. 37 is a plan view showing a layout example of a shared block according to the second layout example. As shown in Fig. 37, the second layout example has a configuration similar to that of the first layout example, except that a control transistor 319 is arranged in the region where the control transistor 318 was arranged in the first layout example, and a common control transistor 318 is arranged in the region where the dummy transistor 972 was arranged.

[0158] 1.18 Actions and Effects As described above, according to this embodiment, when the mode transition from the CIS mode to the EVS mode occurs, the SN potential is fixed to the voltage VX, which is lower than the SN potential during normal operation. This makes it possible to prevent the nMOS transistors 312 and 315 from being turned off, since it is possible to suppress an unintended rise in the SN potential even if the switching transistor 317 is turned on. As a result, it is possible to suppress the dead period caused by the voltage level of the voltage signal VPR sticking to the ground potential (GND).

[0159] 2. Second embodiment In the first embodiment described above, when the mode transition from the CIS mode to the EVS mode occurs, the SN potential is fixed to a voltage VX lower than the SN potential during normal operation, thereby making it possible to suppress an unintended rise in the SN potential and suppress the dead period. In contrast, in the second embodiment, the cathode potential of the photoelectric conversion element 311 is once lowered to a potential lower than the SN potential during normal operation, and then the photoelectric conversion element 311 is electrically floated, and then the switching transistor 317 is turned on. In this way, by lowering the cathode potential of the photoelectric conversion element 311 to a potential lower than the SN potential during normal operation and then connecting the cathode of the photoelectric conversion element 311 to the sense node SN, it is possible to suppress an unintended rise in the SN potential as in the first embodiment, and therefore it is possible to suppress the dead period caused by the voltage level of the voltage signal VPR sticking to the ground potential (GND). Below, several examples of the control of the response circuit 301X when transitioning from the CIS mode to the EVS mode will be described.

[0160] Note that the imaging device, solid-state imaging device, and configurations of each part of the solid-state imaging device according to this embodiment may be similar to those according to the first embodiment, and therefore these will be cited in the description of this embodiment.

[0161] 2.1 First control example In the first control example, a case where this embodiment is applied to the response circuit 301B according to the first modified example described with reference to FIG. 22 in the first embodiment will be described. FIG. 38 is a timing chart showing an example of operation at the time of transition from the CIS mode to the EVS mode according to the first control example. As shown in FIG. 38, in the configuration shown in FIG. 22, during the transition period (t10 to t14) when transitioning from the CIS mode to the EVS mode, the row driving circuit 251 turns on the control transistor 318 and the transfer transistor 372 at timing t11. As a result, a fixed potential VX is applied to the cathode of the photoelectric conversion element 311 via the control transistor 318 and the transfer transistor 372, so that the cathode potential of the photoelectric conversion element 311 is controlled to the fixed potential VX.

[0162] Thereafter, at timing t12, the row driving circuit 251 electrically floats the photoelectric conversion element 311 by turning off the control transistor 318 and the transfer transistor 372, and then at timing t13, turns on the switching transistor 317. In this case, since the cathode potential of the photoelectric conversion element 311 is suppressed to a fixed potential VX that is lower than the SN potential during normal operation, even if the switching transistor 317 is transitioned to the on state, it is possible to suppress an unintended rise in the SN potential.

[0163] 2.2 Second control example In the second control example, a case where this embodiment is applied to the response circuit 301C according to the second modified example described with reference to FIG. 23 in the first embodiment will be described. FIG. 39 is a timing chart showing an example of operation at the time of transition from the CIS mode to the EVS mode according to the second control example. As shown in FIG. 39, in the configuration shown in FIG. 23, during the transition period (t20 to t25) when transitioning from the CIS mode to the EVS mode, the row driving circuit 251 turns on the control transistor 318 and the transfer transistor 372 at timing t21, similarly to the first control example. Thereby, a fixed potential VX is applied to the cathode of the photoelectric conversion element 311 via the control transistor 318 and the transfer transistor 372, so that the cathode potential of the photoelectric conversion element 311 is controlled to the fixed potential VX.

[0164] Thereafter, as in the first control example, the row driving circuit 251 electrically floats the photoelectric conversion element 311 by turning off the control transistor 318 and the transfer transistor 372 at timing t22, and then turns on the switching transistor 317 at timing t23. In this case, since the cathode potential of the photoelectric conversion element 311 is suppressed to a fixed potential VX that is lower than the SN potential during normal operation, even if the switching transistor 317 is transitioned to the on state, it is possible to suppress an unintended rise in the SN potential.

[0165] 39, the row driving circuit 251 may turn on the control transistor 318 and the transfer transistor 372 at timing t21, and may also turn on the control transistor 319 during the period from timing t21 to t24. This causes the SN potential of the sense node SN to be controlled to the fixed potential VX, making it possible to further suppress unintended rises in the SN potential.

[0166] 2.3 Third control example In the third control example, a case where this embodiment is applied to the response circuit 301E according to the fourth modified example described with reference to FIG. 25 in the first embodiment will be described. FIG. 40 is a timing chart showing an example of operation at the time of transition from the CIS mode to the EVS mode according to the third control example. As shown in FIG. 40, in the configuration shown in FIG. 25, during the transition period (t30 to t34) at the time of transition from the CIS mode to the EVS mode, the row driving circuit 251 turns on the reset transistor 373 and the transfer transistor 372 at timing t31. As a result, a fixed potential VX is applied to the cathode of the photoelectric conversion element 311 via the reset transistor 373 and the transfer transistor 372, so that the cathode potential of the photoelectric conversion element 311 is controlled to the fixed potential VX.

[0167] Thereafter, at timing t32, the row driving circuit 251 electrically floats the photoelectric conversion element 311 by turning off the reset transistor 373 and the transfer transistor 372, and then at timing t33, turns on the switching transistor 317. In this case, since the cathode potential of the photoelectric conversion element 311 is suppressed to a fixed potential VX that is lower than the SN potential during normal operation, even if the switching transistor 317 is transitioned to the on state, it is possible to suppress an unintended rise in the SN potential.

[0168] 2.4 Fourth control example In the fourth control example, a case where this embodiment is applied to the response circuit 301F according to the fifth modified example described with reference to FIG. 26 in the first embodiment will be described. FIG. 41 is a timing chart showing an example of operation at the time of transition from the CIS mode to the EVS mode according to the fourth control example. As shown in FIG. 41, in the configuration shown in FIG. 26, during the transition period (t40 to t45) when transitioning from the CIS mode to the EVS mode, the row driving circuit 251 turns on the reset transistor 373 and the transfer transistor 372 at timing t41, similarly to the third control example. Thereby, a fixed potential VX is applied to the cathode of the photoelectric conversion element 311 via the reset transistor 373 and the transfer transistor 372, so that the cathode potential of the photoelectric conversion element 311 is controlled to the fixed potential VX.

[0169] Thereafter, as in the fourth control example, the row drive circuit 251 electrically floats the photoelectric conversion element 311 by turning off the reset transistor 373 and the transfer transistor 372 at timing t42, and then turns on the switching transistor 317 at timing t23. In this case, since the cathode potential of the photoelectric conversion element 311 is suppressed to a fixed potential VX that is lower than the SN potential during normal operation, even if the switching transistor 317 is transitioned to the on state, it is possible to suppress an unintended rise in the SN potential.

[0170] 41, the row driving circuit 251 may turn on the reset transistor 373 and the transfer transistor 372 at timing t41, and may also turn on the control transistor 319 during the period from timing t41 to t44. This causes the SN potential of the sense node SN to be controlled to the fixed potential VX, making it possible to further suppress unintended rises in the SN potential.

[0171] 2.5 Fifth control example In the fifth control example, a case where this embodiment is applied to the response circuit 301G according to the sixth modified example described in the first embodiment with reference to FIG. 27 will be described. FIG. 42 is a timing chart showing an example of operation at the time of transition from the CIS mode to the EVS mode according to the fifth control example. As shown in FIG. 42, in the configuration shown in FIG. 27, during the transition period (t50 to t54) when transitioning from the CIS mode to the EVS mode, the row driving circuit 251 turns on the control transistor 318 at timing t51. As a result, a fixed potential VX is applied to the cathode of the photoelectric conversion element 311 via the control transistor 318, so that the cathode potential of the photoelectric conversion element 311 is controlled to the fixed potential VX.

[0172] Thereafter, at timing t52, the row drive circuit 251 electrically floats the photoelectric conversion element 311 by turning off the control transistor 318, and then at timing t53, turns on the switching transistor 317. In this case, since the cathode potential of the photoelectric conversion element 311 is suppressed to a fixed potential VX that is lower than the SN potential during normal operation, even if the switching transistor 317 is transitioned to the on state, it is possible to suppress an unintended rise in the SN potential.

[0173] 2.6 6th control example In the sixth control example, a case where this embodiment is applied to the response circuit 301H according to the seventh modified example described with reference to FIG. 28 in the first embodiment will be described. FIG. 43 is a timing chart showing an example of operation at the time of transition from the CIS mode to the EVS mode according to the sixth control example. As shown in FIG. 43, in the configuration shown in FIG. 28, during the transition period (t60 to t64) when transitioning from the CIS mode to the EVS mode, the row driving circuit 251 turns on the control transistor 318 and the switching transistor 317 at timing t61. As a result, a fixed potential VX is applied to the cathode of the photoelectric conversion element 311 via the control transistor 318 and the switching transistor 317, so that the cathode potential of the photoelectric conversion element 311 is controlled to the fixed potential VX.

[0174] Thereafter, at timing t62, the row driving circuit 251 electrically floats the photoelectric conversion element 311 and the switching transistor 317 by turning off the control transistor 318, and then at timing t63, turns on the control transistor 319. In this case, since the cathode potential of the photoelectric conversion element 311 is suppressed to a fixed potential VX that is lower than the SN potential during normal operation, even if the control transistor 319 is transitioned to the on state, it is possible to suppress an unintended rise in the SN potential.

[0175] The row driving circuit 251 may turn on the control transistor 319 at the same time as turning on the control transistor 318 and the switching transistor 317 at timing t61. This causes the SN potential of the sense node SN to be controlled to the fixed potential VX, making it possible to further suppress unintended rises in the SN potential.

[0176] 2.7 Seventh control example In the seventh control example, a case where this embodiment is applied to the response circuit 301I according to the eighth modified example described with reference to FIG. 29 in the first embodiment will be described. FIG. 44 is a timing chart showing an example of operation at the time of transition from the CIS mode to the EVS mode according to the seventh control example. As shown in FIG. 44, in the configuration shown in FIG. 29, during the transition period (t70 to t74) when transitioning from the CIS mode to the EVS mode, the row driving circuit 251 turns on the reset transistor 373, the transfer transistor 372, and the switching transistor 317 at timing t71. As a result, a fixed potential VX is applied to the cathode of the photoelectric conversion element 311 via the reset transistor 373, the transfer transistor 372, and the switching transistor 317, so that the cathode potential of the photoelectric conversion element 311 is controlled to the fixed potential VX.

[0177] Thereafter, at timing t72, the row driving circuit 251 electrically floats the photoelectric conversion element 311 and the switching transistor 317 by turning off the reset transistor 373 and the transfer transistor 372, and then at timing t73, turns on the control transistor 319. In this case, since the cathode potential of the photoelectric conversion element 311 is suppressed to a fixed potential VX that is lower than the SN potential during normal operation, even if the control transistor 319 is transitioned to the on state, it is possible to suppress an unintended rise in the SN potential.

[0178] At timing t71, the row driving circuit 251 may turn on the reset transistor 373, the transfer transistor 372, and the switching transistor 317, and at the same time, turn on the control transistor 319. This causes the SN potential of the sense node SN to be controlled to the fixed potential VX, making it possible to further suppress an unintended rise in the SN potential.

[0179] 2.8 Actions and Effects As described above, according to this embodiment, the cathode potential of the photoelectric conversion element 311 is once lowered to a potential lower than the SN potential during normal operation, the photoelectric conversion element 311 is electrically floated, and then the switching transistor 317 is turned on. As a result, as in the first embodiment, it is possible to suppress an unintended rise in the SN potential, and therefore it is possible to suppress a dead period caused by the voltage level of the voltage signal VPR being stuck to the ground potential (GND).

[0180] Other configurations, operations, and effects may be similar to those of the above-described embodiment, and therefore detailed description thereof will be omitted here. In addition, the configuration according to this embodiment may be appropriately combined with the above-described embodiment and / or the embodiment described later.

[0181] 3. Third embodiment In the third embodiment, an example will be given of a case in which an unintended rise in the SN potential is suppressed by controlling the bias current BIAS flowing through the nMOS transistor 313 / nMOS transistors 313 and 316 in the logarithmic conversion circuit of the logarithmic response unit 310 / 310A, and a dead period caused by the voltage level of the voltage signal VPR sticking to the ground potential (GND) is suppressed.

[0182] In addition, the imaging device, solid-state imaging device, and the configuration of each part constituting the solid-state imaging device according to this embodiment may be the same as those according to the first embodiment, so in this embodiment, they will be quoted and described. However, in this embodiment, the response circuit 301X constituting the shared block 221X is replaced with a response circuit described later. In addition, in the following description, a case where a response circuit is configured using the logarithmic response unit 310A described in the first embodiment using FIG. 7 will be illustrated, but the present invention is not limited to this, and other logarithmic response units such as the logarithmic response unit 310 described using FIG. 6 can also be used.

[0183] 3.1 Example of response circuit configuration Fig. 45 is a circuit diagram showing a configuration example of a response circuit according to this embodiment. As shown in Fig. 45, a response circuit 301J according to this embodiment has a configuration similar to that of the response circuit 301 described in the first embodiment with reference to Fig. 9, in which a pMOS transistor 314 as a constant current circuit (also called a load MOS transistor or a load resistor) in a logarithmic response unit 310A is replaced with a bias circuit 314A.

[0184] The bias circuit 314A includes two pMOS transistors 314a and 314b that form a current mirror circuit, and a DAC (Digital to Analog Converter) 314c that generates a voltage for controlling the bias current BIAS that flows through this current mirror circuit in accordance with a control signal CTL input from the row drive circuit 251.

[0185] The DAC 314c converts the digital control signal CTL input from the row drive circuit 251 into an analog voltage and applies this to the source of the pMOS transistor 314b, thereby controlling the bias current BIAS flowing through the nMOS transistors 313 and 316 of the logarithmic conversion circuit connected to the source of the other pMOS transistor 314a.

[0186] Specifically, for example, when a control signal CTL of '1' is input from the row drive circuit 251, the DAC 314c supplies a reference current to the current mirror circuit. As a result, a bias current BIAS according to the reference current flows through the nMOS transistors 313 and 316 of the logarithmic conversion circuit.

[0187] On the other hand, the DAC 314c cuts off the supply of the reference current to the current mirror circuit when a control signal CTL of '0' is input from the row drive circuit 251. This cuts off the bias current BIAS flowing through the nMOS transistors 313 and 316 of the logarithmic conversion circuit.

[0188] The bias circuit 314A may be disposed on the detection chip 202 side, for example. The DAC 314c may be configured using a binary method using an R-2R ladder, a current mirror using an nMOS transistor (hereinafter also referred to as an nMOS current mirror), etc. When configured using an nMOS current mirror, it is possible to generate a reference current in a bandgap reference circuit.

[0189] 3.1.1 Modified response circuit Fig. 46 is a circuit diagram showing a modification of the response circuit according to the present embodiment. As shown in Fig. 46, the response circuit 301K according to the modification has the same configuration as the response circuit 301J described above with reference to Fig. 45, but the bias circuit 314A is replaced with a bias circuit 314B.

[0190] The bias circuit 314B has a configuration similar to that of the bias circuit 314A, except that the DAC 314c is replaced with a constant current source 314e and a bias control transistor 314d is added to the source of the pMOS transistor 314a that constitutes a current mirror circuit.

[0191] In this configuration, when a bias current is supplied to the logarithmic conversion circuit, the row drive circuit 251 applies a high-level control signal CTL to the gate of the bias control transistor 314d, for example. This forms a current path from the current mirror circuit to the logarithmic conversion circuit, and a bias current BIAS, which uses the current flowing through the constant current source 314e as a reference current, is supplied to the logarithmic conversion circuit. On the other hand, when a bias current is not supplied to the logarithmic conversion circuit, the row drive circuit 251 applies a low-level control signal CTL to the gate of the bias control transistor 314d, for example. This blocks the current path from the current mirror circuit to the logarithmic conversion circuit, and therefore blocks the supply of the bias current BIAS to the logarithmic conversion circuit.

[0192] The bias control transistor 314d may be disposed in the light receiving chip 201 or in the detection chip 202. The other configuration may be similar to that of the response circuit 301J described above.

[0193] In the above configuration, when transitioning from the CIS mode to the EVS mode, the bias current BIAS flowing through the nMOS transistors 313 and 316 of the logarithmic conversion circuit is cut off using the control signal CTL given to the DAC 314c or the bias control transistor 314d. This makes it possible to suppress an unintended rise in the SN potential when the switching transistor 317 is transitioned to the ON state, as in the above-mentioned embodiment. As a result, it becomes possible to prevent the nMOS transistors 312 and 315 from being turned OFF, and therefore it becomes possible to suppress the dead period caused by the voltage level of the voltage signal VPR sticking to the ground potential (GND).

[0194] Furthermore, when the flow of the bias current BIAS in the logarithmic conversion circuit is controlled as in the present embodiment, it is possible to ease the limitations on the circuit design required for the response circuit 301J. This allows the response circuit 301J, and therefore the solid-state imaging device 200, to be designed with a higher degree of design freedom.

[0195] 3.2 Transition from CIS mode to EVS mode Next, the operation when transitioning from the CIS mode to the EVS mode will be described. Note that, in this description, the response circuit 301J illustrated in FIG. 45 will be cited for explanation, but the same can be applied to the response circuit 301K illustrated in FIG. 46.

[0196] Fig. 47 is a timing chart showing an example of an operation at the time of transition from the CIS mode to the EVS mode according to the present embodiment. As shown in Fig. 47, in the transition from the CIS mode to the EVS mode, first, in synchronization with the end timing t80 of the CIS mode, the supply of control signals (TRG, SEL, RST) from the row driving circuit 251 to the transfer transistor 372, the selection transistor 376, and the reset transistor 373 constituting the pixel circuit 370 is stopped.

[0197] Next, in the transition period (t80 to t82) from the CIS mode to the EVS mode, the row drive circuit 251 turns on the switching transistor 317 at timing t81. During the transition period (t80 to t82), the control signal CTL is '0', so that the bias current BIAS flowing through the logarithmic conversion circuit is cut off (low level).

[0198] After that, the row drive circuit 251 sets the control signal CTL to '1' at timing t82. This causes the bias current BIAS to be supplied (high level) to the logarithmic conversion circuit via the bias circuits 314A / 314B. Then, the row drive circuit 251 executes the EVS mode after timing t82.

[0199] 3.3 Operational flow Next, an operation example of the imaging device 100 according to this embodiment will be described. Fig. 48 is a flowchart showing an operation example of the imaging device according to this embodiment. In the following description, a case where the response circuit 301J is incorporated in the shared block 221X is illustrated, but the present invention is not limited to this, and the shared block 221X may be replaced with a response circuit 301K according to a modified example. The operation shown in Fig. 48 may be ended by an interrupt operation such as a shutdown.

[0200] As shown in FIG. 48, in this operation, when the imaging device 100 is started, the EVS mode is started and a motion detection process is executed (step S301) similarly to steps S101 to S102 in FIG. 31 in the first embodiment, and it is determined whether or not the motion of an object has been detected (step S302).

[0201] When the movement of the object is detected in step S302 (YES in step S302), a transition from the EVS mode to the CIS mode is executed. During this transition period, the row driving circuit 251 first turns off the bias circuit 314A in the response circuit 301J, thereby turning off the bias current BIAS flowing through the nMOS transistors 313 and 316 of the logarithmic response unit 310A (step S303). Turning off the bias circuit 314A may mean inputting a control signal CTL of '0' to the DAC 314c.

[0202] Next, the row drive circuit 251 turns off the switching transistor (TGD gate) 317 (step S304), which stops the supply of photocurrent to the logarithmic response unit 310A and transitions to the CIS mode.

[0203] In the CIS mode, the row driving circuit 251 generates frame data of an image of an object (step S305), similarly to steps S105 to S106 in FIG. 31, and thereby identifies the imaged object (step S306).

[0204] When the identification of the object is completed in this manner, the solid-state imaging device 200 executes a transition from the CIS mode to the EVS mode. During this transition period, the row driving circuit 251 first turns on the switching transistor 317 (step S307), and then turns on the bias circuit 314A in the response circuit 301 to pass a bias current BIAS through the nMOS transistors 313 and 316 of the logarithmic response unit 310A (step S308). This starts the supply of a photocurrent to the logarithmic response unit 310A, and transitions to the EVS mode. Turning on the bias circuit 314A may be achieved by inputting a control signal CTL of '1' to the DAC 314c.

[0205] 3.4 Actions and Effects As described above, according to this embodiment, during the transition period from the CIS mode to the EVS mode, the supply of the bias current BIAS to the logarithmic conversion circuit is cut off. This makes it possible to suppress an unintended rise in the SN potential when the switching transistor 317 is transitioned to the ON state, as in the above-mentioned embodiment. As a result, it is possible to prevent the nMOS transistors 312 and 315 from being turned OFF, and therefore it is possible to suppress the dead period caused by the voltage level of the voltage signal VPR sticking to the ground potential (GND).

[0206] Furthermore, when the flow of the bias current BIAS in the logarithmic conversion circuit is controlled as in the present embodiment, it is possible to ease the limitations on the circuit design required for the response circuit 301J. This allows the response circuit 301J, and therefore the solid-state imaging device 200, to be designed with a higher degree of design freedom.

[0207] Other configurations, operations, and effects may be similar to those of the above-described embodiment, and therefore detailed description thereof will be omitted here. In addition, the configuration according to this embodiment may be appropriately combined with the above-described embodiment and / or the embodiment described later.

[0208] 4. Fourth embodiment In the fourth embodiment, an example will be described in which the configuration according to the first and / or second embodiment and the configuration according to the third embodiment are combined.

[0209] The imaging device, solid-state imaging device, and the configuration of each part constituting the solid-state imaging device according to this embodiment may be the same as those according to any of the first to third embodiments, so in this embodiment, they will be cited and described. However, in this embodiment, the response circuit 301X constituting the shared block 221X is replaced with a response circuit described later. In the following description, the response circuit is configured using the logarithmic response unit 310A described in the first embodiment using FIG. 7, but is not limited to this, and other logarithmic response units such as the logarithmic response unit 310 described using FIG. 6 can also be used.

[0210] 4.1 Example of response circuit configuration Fig. 49 is a circuit diagram showing a configuration example of the response circuit according to this embodiment. As shown in Fig. 49, the response circuit 301L according to this embodiment has a configuration in which, for example, the response circuit 301A described in the first or second embodiment using Fig. 21 and the response circuit 301J described in the third embodiment using Fig. 45 are combined. Specifically, the response circuit 301L has a configuration in which a control transistor 318 is connected to the sense node SN in the response circuit 301J described in the third embodiment using Fig. 45.

[0211] 4.1.1 Modified response circuit Fig. 50 is a circuit diagram showing a modified example of the response circuit according to the present embodiment. As shown in Fig. 50, the response circuit 301M according to the modified example has a configuration in which, for example, the response circuit 301A described in the first or second embodiment with reference to Fig. 21 and the response circuit 301K described in the third embodiment with reference to Fig. 46 are combined. Specifically, the response circuit 301M has a configuration in which a control transistor 318 is connected to the sense node SN in the response circuit 301K described in the third embodiment with reference to Fig. 46.

[0212] According to such a configuration, when transitioning from the CIS mode to the EVS mode, the SN potential of the sense node SN and / or the cathode potential of the photoelectric conversion element 311 can be fixed to a fixed potential VX lower than the SN potential during normal operation, and the supply of bias current to the logarithmic response circuit in the logarithmic response unit 310A can be cut off, so that an unintended rise in the SN potential can be further suppressed. This makes it possible to further suppress the dead period caused by the voltage level of the voltage signal VPR sticking to the ground potential (GND).

[0213] The configuration to be combined with the response circuit 301J / 301K according to the third embodiment is not limited to the response circuit 301A illustrated in FIG. 21, and may be, for example, any of the response circuits 301B to 301I illustrated in FIGS. 22 to 29.

[0214] 4.2 Transition from CIS mode to EVS mode Next, the operation when transitioning from the CIS mode to the EVS mode will be described. In this description, the response circuit 301L illustrated in Fig. 49 will be cited for explanation, but the modification can also be operated in the same manner by appropriately controlling the control transistor 319, the transfer transistor 372, the reset transistor 373, etc. in conjunction with the control of the control transistor 318.

[0215] Fig. 51 is a timing chart showing an example of an operation at the time of transition from the CIS mode to the EVS mode according to the present embodiment. As shown in Fig. 51, in the transition from the CIS mode to the EVS mode, first, in synchronization with the end timing t90 of the CIS mode, the supply of control signals (TRG, SEL, RST) from the row driving circuit 251 to the transfer transistor 372, the selection transistor 376, and the reset transistor 373 constituting the pixel circuit 370 is stopped.

[0216] Next, during the transition period (t90 to t94) from the CIS mode to the EVS mode, the row driving circuit 251 sets the control signal MST to a high level at timing t91 to turn on the control transistor 318. This causes the SN potential of the sense node SN to be fixed to the fixed potential VX. Note that during the transition period (t90 to t92), the control signal CTL is '0', so the bias current BIAS flowing through the logarithmic conversion circuit is cut off (low level).

[0217] Next, at timing t92, the row driving circuit 251 sets the switching signal TGD to a high level to turn on the switching transistor 317. At this time, since the SN potential of the sense node SN is fixed to the fixed potential VX, it is possible to prevent the voltage level of the voltage signal VPR from being stuck to the ground potential (GND).

[0218] After that, the row drive circuit 251 turns off the control transistor 318 at timing t93, and then sets the control signal CTL to '1' at timing t94. This causes the bias current BIAS to be supplied (high level) to the logarithmic conversion circuit via the bias circuits 314A / 314B. Then, the row drive circuit 251 executes the EVS mode after timing t94.

[0219] 4.3 Operational flow Next, an operation example of the imaging device 100 according to this embodiment will be described. Fig. 52 is a flowchart showing an operation example of the imaging device according to this embodiment. In the following description, a case where the response circuit 301L is incorporated in the shared block 221X is illustrated, but the present invention is not limited to this, and the response circuit 301L may be replaced with a modified response circuit 301M. The operation shown in Fig. 52 may be ended by an interrupt operation such as a shutdown.

[0220] As shown in FIG. 52, in this operation, when the imaging device 100 is started, for example, similar to steps S101 to S102 in FIG. 31 in the first embodiment, the EVS mode is started and a motion detection process is executed (step S401), and it is determined whether or not the motion of an object has been detected (step S402).

[0221] When the movement of the object is detected in step S402 (YES in step S402), a transition from the EVS mode to the CIS mode is executed. During this transition period, the row driving circuit 251 turns off the bias current BIAS by turning off the bias circuit 314A in the response circuit 301L (step S403), similar to steps S303 to S304 in FIG. 48 in the third embodiment, and then turns off the switching transistor (TGD gate) 317 (step S404). This stops the supply of photocurrent to the logarithmic response unit 310A, and transitions to the CIS mode.

[0222] In the CIS mode, the row driving circuit 251 generates frame data of an image of an object (step S405), similar to steps S105 to S106 of FIG. 31 in the first embodiment or steps S305 to S306 of FIG. 48 in the third embodiment, and thereby identifies the imaged object (step S406).

[0223] When the identification of the object is completed in this manner, the solid-state imaging device 200 executes a transition from the CIS mode to the EVS mode. During this transition period, the row driving circuit 251 turns on the control transistor (also referred to as the MST gate) 318 and the switching transistor 317 (steps S407 to S408) and turns off the control transistor 318 (step S409), similar to steps S107 to S109 in FIG. 31 in the first embodiment. Then, the row driving circuit 251 turns on the bias circuit 314A in the response circuit 301L, causing a bias current BIAS to flow through the nMOS transistors 313 and 316 of the logarithmic response unit 310A (step S410), similar to step S308 in FIG. 48 in the third embodiment. This starts the supply of a photocurrent to the logarithmic response unit 310A, and transitions to the EVS mode.

[0224] 4.4 Actions and Effects As described above, according to this embodiment, when transitioning from the CIS mode to the EVS mode, the SN potential of the sense node SN and / or the cathode potential of the photoelectric conversion element 311 can be fixed to a fixed potential VX lower than the SN potential during normal operation, and the supply of bias current to the logarithmic response circuit in the logarithmic response unit 310A can be cut off, so that an unintended rise in the SN potential can be further suppressed. This makes it possible to further suppress the dead period caused by the voltage level of the voltage signal VPR sticking to the ground potential (GND).

[0225] Other configurations, operations, and effects may be similar to those of the above-described embodiment, and therefore detailed description thereof will be omitted here. In addition, the configuration according to this embodiment may be appropriately combined with the above-described embodiment and / or the embodiment described later.

[0226] 5. Fifth embodiment In the above-described embodiment, a case has been described in which a dead period that occurs when transitioning from CIS mode to EVS mode is suppressed. In the present embodiment, however, a case will be described in which a dead period that may occur when transitioning, for example, from all pixel mode to binning mode or from binning mode to all pixel mode during EVS operation (which may be during EVS mode) is suppressed.

[0227] As described above, while the solid-state imaging device 200 is operating as an EVS, the SN potential of the sense node SN may swing when transitioning from the full pixel mode to the binning mode or from the binning mode to the full pixel mode. In that case, a dead period during which an address event cannot be detected and a settling time until the SN potential settles to a voltage level during normal operation may occur. Therefore, in this embodiment, a configuration that can suppress the occurrence of this dead period will be described with the following example.

[0228] In the following description, an example is given in which the solid-state imaging device 200 does not have a CIS mode, i.e., the solid-state imaging device 200 does not have a pixel circuit 370 for acquiring gradation data; however, this is not limited to this, and similar to the above-described embodiment, this embodiment may be applied when the solid-state imaging device 200 having the pixel circuit 370 transitions from the full pixel mode to the binning mode or from the binning mode to the full pixel mode while operating in the EVS mode.

[0229] The imaging device, solid-state imaging device, and the configuration of each part constituting the solid-state imaging device according to this embodiment may be the same as those according to any of the first to fourth embodiments, so in this embodiment, they will be cited and described. However, in this embodiment, the detection chip 202 is replaced with a detection chip described later, and the shared block 221X is replaced with a shared block described later. In the following description, the case where the logarithmic response unit 310A described in the first embodiment using FIG. 7 is used will be illustrated, but the present invention is not limited to this, and other logarithmic response units such as the logarithmic response unit 310 described using FIG. 6 can also be used.

[0230] 5.1 Example of detector chip layout Fig. 53 is an example of a plan view of the detection chip according to this embodiment. As shown in Fig. 53, the detection chip 202A according to this embodiment has a configuration similar to that of the detection chip 202 described in the first embodiment with reference to Fig. 4, except that the column ADC 270 for reading out lower-order data is omitted.

[0231] 5.2 Basic configuration example of shared blocks Fig. 54 is a circuit diagram showing a configuration example of a shared block according to this embodiment. As shown in Fig. 54, a shared block 821 according to this embodiment includes a plurality of response circuits 801A1-801A4 (hereinafter, when the response circuits 801A1-801A4 are not distinguished from each other, the reference numerals thereof will be referred to as 801A). Note that the number of response circuits 801A in the shared block 821 is not limited to a total of four, ie, two rows by two columns, and may be an integer of two or more.

[0232] Each response circuit 801A has a configuration similar to that of the response circuit 301A described using FIG. 21 in the first embodiment, except that the transfer transistor 372, reset transistor 373, floating diffusion region 374, amplification transistor 375, and selection transistor 376 that constitute the pixel circuit 370 are omitted.

[0233] In such a configuration, when suppressing the swing of the SN potential of the sense node SN in each response circuit 801, the control transistor 318 is turned on and a fixed potential VX is applied to the sense node SN. This controls the SN potential of the sense node SN to the fixed potential VX, making it possible to shorten the settling time caused by the swing of the SN potential.

[0234] 5.3 Circuit-Sharing Binning Mode 54, for example, by making it possible to form a current path connecting the sense nodes SN of each response circuit 801A, it is possible to realize a configuration capable of switching between the all pixel mode and the binning mode. Therefore, below, several examples of circuit configurations of the shared block 821 that enable switching between the all pixel mode and the binning mode will be described.

[0235] 5.3.1 First sharing example Fig. 55 is a circuit diagram showing a circuit configuration example of a shared block according to the first sharing example. Note that the first sharing example illustrates a case where the shared block 221C according to the second sharing example described in the first embodiment with reference to Fig. 33 is used as a base.

[0236] 55, a shared block 821C according to a first sharing example has a configuration similar to that of the shared block 221C described with reference to FIG. 33, except that the read circuit 370a connected to the common line 3101 is omitted. More specifically, the shared block 821C has a configuration in which the sense nodes SN of a plurality of response circuits 801C1 to 801C4 are connected to each other via a control transistor 319 and a common line 3101. However, in the shared block 821C, a transfer transistor 372 remains to control the connection between the photoelectric conversion element 311 and the common line 3101 in each of the response circuits 801C1 to 801C4.

[0237] In this configuration, when the shared block 821C is driven in the full pixel mode, the row drive circuit 251 turns off the transfer transistor 372 and the control transistor 319 of each of the response circuits 801C1 to 801C4. This connects the photoelectric conversion element 311 of each of the response circuits 801C1 to 801C4 to its own sense node SN, making it possible to detect an address event in the full pixel mode.

[0238] In addition, when suppressing the swing of the SN potential of the sense node SN in the all pixel mode, the control transistors 318 and 319 of each of the response circuits 801C1 to 801C4 are turned on. This applies a fixed potential VX to the sense node SN of each of the response circuits 801C1 to 801C4, making it possible to shorten the settling time caused by the swing of the SN potential. At that time, the transfer transistor 372 and / or the switching transistor 317 of each of the response circuits 801C1 to 801C4 may be turned on to control the cathode potential of the photoelectric conversion element 311 to the fixed potential VX.

[0239] Furthermore, when driving the shared block 821C in the binning mode, the row driving circuit 251 turns on the switching transistor 317 and the control transistor 319 of the response circuit 801C1, turns off the switching transistors 317 and the control transistors 319 of the other response circuits 801C2 to 801C4, and turns on the transfer transistor 372. This forms a current path from the photoelectric conversion element 311 of each of the response circuits 801C1 to 801C4 to the sense node SN of the response circuit 801C1, making it possible to detect an address event in the binning mode.

[0240] In addition, when suppressing the swing of the SN potential of the sense node SN in the binning mode, the control transistors 318 and 319 of each of the response circuits 801C1 to 801C4 are turned on. This applies a fixed potential VX to the sense node SN of each of the response circuits 801C1 to 801C4, making it possible to shorten the settling time caused by the swing of the SN potential. At that time, the cathode potential of the photoelectric conversion element 311 may be controlled to the fixed potential VX by turning on the transfer transistor 372 and / or the switching transistor 317 of each of the response circuits 801C1 to 801C4.

[0241] 5.3.2 Second sharing example Fig. 56 is a circuit diagram showing a circuit configuration example of a shared block according to the second sharing example. Note that the second sharing example illustrates a case where the shared block 221D according to the third sharing example described in the first embodiment with reference to Fig. 34 is used as a base.

[0242] 56, a shared block 821D according to the second sharing example has a configuration similar to that of the shared block 221D described using FIG. 34, except that the read circuit 370a connected to the common line 3101 is omitted. More specifically, the shared block 821D has a configuration in which the sense nodes SN of the multiple response circuits 801D1 to 801D4 are connected to each other via the control transistor 319 and the common line 3101. However, in the shared block 821D, a transfer transistor 372 remains to control the connection between the photoelectric conversion element 311 and the common line 3101 in each of the response circuits 801D1 to 801D4.

[0243] In this configuration, when the shared block 821D is driven in the full pixel mode, the row drive circuit 251 turns off the transfer transistors 372 and the control transistors 319 of the response circuits 801D1 to 801D4. This connects the photoelectric conversion elements 311 of the response circuits 801D1 to 801D4 to their respective sense nodes SN, making it possible to detect an address event in the full pixel mode.

[0244] In addition, when suppressing the swing of the SN potential of the sense node SN in the all pixel mode, the control transistor 318 of each of the response circuits 801D1 to 801D4 is turned on. This applies a fixed potential VX to the sense node SN of each of the response circuits 801D1 to 801D4, making it possible to shorten the settling time caused by the swing of the SN potential. At that time, the switching transistor 317 of each of the response circuits 801D1 to 801D4 may be turned on to control the cathode potential of the photoelectric conversion element 311 to the fixed potential VX.

[0245] Moreover, when driving the shared block 821D in the binning mode, the row driving circuit 251 turns on the switching transistor 317 and the control transistor 319 of the response circuit 801D1, turns off the switching transistors 317 and the control transistors 319 of the other response circuits 801D2 to 801D4, and turns on the transfer transistor 372. This forms a current path from the photoelectric conversion element 311 of each of the response circuits 801D1 to 801D4 to the sense node SN of the response circuit 801D1, making it possible to detect an address event in the binning mode.

[0246] In addition, when suppressing the swing of the SN potential of the sense node SN in the binning mode, the control transistor 318 of each of the response circuits 801D1 to 801D4 is turned on. This applies a fixed potential VX to the sense node SN of each of the response circuits 801D1 to 801D4, making it possible to shorten the settling time caused by the swing of the SN potential. At that time, the cathode potential of the photoelectric conversion element 311 may be controlled to the fixed potential VX by turning on the switching transistor 317 of each of the response circuits 801D1 to 801D4.

[0247] 5.3.3 Third sharing example Fig. 57 is a circuit diagram showing a circuit configuration example of a shared block according to the third sharing example. Note that the third sharing example illustrates a case where the shared block 221CC according to the fourth sharing example described in the first embodiment with reference to Fig. 35 is used as a base.

[0248] As shown in FIG. 57, the shared block 821CC according to the third sharing example has a configuration similar to that of the shared block 221CC described with reference to FIG. 35, except that the read circuit 370a connected to the common line 3101 is omitted. More specifically, the shared block 821CC has a configuration in which the sense nodes SN of the multiple response circuits 801C1 to 801C4 are connected to each other via the control transistor 319 and the common line 3101. However, in the shared block 821CC, the transfer transistor 372 remains in order to control the connection between the photoelectric conversion element 311 in each of the response circuits 801C1 to 801C4 and the common line 3101. This may be similar to the configuration in which the control transistor 318 in each of the response circuits 801C1 to 801C4 in the shared block 821C according to the first sharing example described with reference to FIG. 55 is replaced with a common control transistor 318 connected to the common line 3101.

[0249] In this configuration, when the shared block 821D is driven in the full pixel mode, the row drive circuit 251 turns off the transfer transistor 372 and the control transistor 319 of each of the response circuits 801C1 to 801C4. This connects the photoelectric conversion element 311 of each of the response circuits 801C1 to 801C4 to its own sense node SN, making it possible to detect an address event in the full pixel mode.

[0250] In addition, when suppressing the swing of the SN potential of the sense node SN in the all pixel mode, the control transistor 318 connected to the common line 3101 is turned on. This applies a fixed potential VX to the sense node SN of each of the response circuits 801C1 to 801C4, making it possible to shorten the settling time caused by the swing of the SN potential. At that time, the cathode potential of the photoelectric conversion element 311 may be controlled to the fixed potential VX by turning on the switching transistor 317 of each of the response circuits 801C1 to 801C4.

[0251] Moreover, when driving the shared block 821D in the binning mode, the row driving circuit 251 turns on the switching transistor 317 and the control transistor 319 of the response circuit 801D1, turns off the switching transistors 317 and the control transistors 319 of the other response circuits 801D2 to 801D4, and turns on the transfer transistor 372. This forms a current path from the photoelectric conversion element 311 of each of the response circuits 801D1 to 801D4 to the sense node SN of the response circuit 801D1, making it possible to detect an address event in the binning mode.

[0252] In addition, when suppressing the swing of the SN potential of the sense node SN in the binning mode, the control transistor 318 connected to the common line 3101 is turned on. This applies a fixed potential VX to the sense node SN of each of the response circuits 801C1 to 801C4, making it possible to shorten the settling time caused by the swing of the SN potential. At that time, the cathode potential of the photoelectric conversion element 311 may be controlled to the fixed potential VX by turning on the switching transistor 317 of each of the response circuits 801C1 to 801C4.

[0253] 5.4 Actions and Effects As described above, even while the solid-state imaging device is operating as an EVS, by fixing the SN potential of the sense node SN to a fixed potential VX when transitioning from pixel mode to binning mode or from binning mode to all pixel mode, it is possible to shorten the settling time caused by the swing of the SN potential and thereby shorten the period required for mode transition.

[0254] Other configurations, operations, and effects may be similar to those of the above-described embodiment, and therefore detailed description thereof will be omitted here. In addition, the configuration according to this embodiment may be appropriately combined with the above-described embodiment and / or the embodiment described later.

[0255] 6. Sixth embodiment In the sixth embodiment, another configuration for fixing the SN potential of the sense node SN during mode transition will be described by way of example.

[0256] The imaging device, solid-state imaging device, and the configuration of each part constituting the solid-state imaging device according to this embodiment may be the same as those according to any of the first to third embodiments, so in this embodiment, they will be cited and described. However, in this embodiment, the response circuit 301X constituting the shared block 221X is replaced with a response circuit described later. In the following description, the response circuit is configured using the logarithmic response unit 310A described in the first embodiment using FIG. 7, but is not limited to this, and other logarithmic response units such as the logarithmic response unit 310 described using FIG. 6 can also be used.

[0257] 6.1 Example of response circuit configuration Fig. 58 is a circuit diagram showing a configuration example of a response circuit according to this embodiment. As shown in Fig. 58, the response circuit 301N according to this embodiment has a configuration similar to that of the response circuit 301A described in the first embodiment with reference to Fig. 21, in which a control transistor 318 is connected between the gate of an nMOS transistor 312 and the gate of an nMOS transistor 313 (corresponding to a sense node SN) that constitute a logarithmic conversion circuit.

[0258] 6.2 Actions and Effects In the above configuration, when the control transistor 318 is turned on, it is possible to configure the SN potential of the sense node SN to be determined by the bias current BIAS flowing through the nMOS transistor 313. Therefore, in this embodiment, for example, when transitioning from the CIS mode to the EVS node, or when switching between the full pixel mode and the binning mode, the control transistor 318 is turned on with the supply of the bias current BIAS to the nMOS transistor 313 turned off, and then the switching transistor 317 is turned on with the control transistor 318 turned on. This makes it possible to make the SN potential lower than the SN potential during normal operation, making it possible to suppress the dead period caused by the voltage level of the voltage signal VPR sticking to the ground potential (GND). Note that when the EVS mode is started, the supply of the bias current BIAS to the nMOS transistor 313 is started.

[0259] Other configurations, operations, and effects may be similar to those of the above-described embodiment, and therefore detailed description thereof will be omitted here. In addition, the configuration according to this embodiment may be appropriately combined with the above-described embodiment and / or the embodiment described later.

[0260] 7. Seventh embodiment In the above-described embodiment, a synchronous EVS that does not require arbitration of requests to read out detection signals output from each shared block 221, etc. is applied to the solid-state imaging device 200, but the present invention is not limited to such a configuration. For example, as in the solid-state imaging device illustrated in Fig. 59, an asynchronous EVS including a row arbiter 280 that arbitrates requests output from each row of the address event detection unit 260 and orders the rows for reading out detection signals may be applied. Note that Fig. 59 shows a detection chip 1202 in the solid-state imaging device according to this embodiment.

[0261] In this way, even when an asynchronous EVS is applied, by providing the same configuration and operation as the above-described embodiment, it is possible to suppress the dead period during mode transition and achieve rapid mode transition.

[0262] Other configurations, operations, and effects may be similar to those of the above-described embodiment, and therefore detailed description thereof will be omitted here. In addition, the configuration according to this embodiment may be appropriately combined with the above-described embodiment and / or the embodiment described later.

[0263] 8. Eighth embodiment As in the above-described embodiment, when the response circuit 301 / 801 or the like includes the control transistor 318 and / or 319, additional wiring or the like is required for the existing response circuit. In that case, the wiring capacitance changes before and after the additional placement of the control transistor 318 and / or 319, and the quantum efficiency for incident light, the operating characteristics of the EVS, and the like may be affected. Therefore, in the eighth embodiment, several examples of pixel layouts that can suppress the effects on the quantum efficiency, operating characteristics, and the like even when the control transistor 318 and / or 319 is additionally placed will be described.

[0264] In the following description, the layout example (see FIG. 36 or FIG. 37) of the light receiving section 220 of the shared block 221X exemplified in the first embodiment is used as a base, and a layout example according to this embodiment will be described as a modification of the layout example. In the following description, a schematic layout example of the element forming surface side of the semiconductor substrate on which the photoelectric conversion element 311 is formed is shown, similar to the description of FIG. 36 or FIG. 37 in the first embodiment. In addition, for clarity, the arrangement of each transistor is shown by the position of the gate electrode.

[0265] 8.1 First layout variant In the first layout modification, a layout example of a shared block 221A (see FIG. 32) according to a first sharing example of the first embodiment will be described. That is, in the first layout modification, a case is shown in which each of the response circuits 301A1 to 301A4 includes an individual control transistor 318. FIG. 60 is a plan view showing a layout example of a shared block according to the first layout modification.

[0266] 60, in the first layout modification, similarly to the first layout example described above with reference to FIG 36, response circuits 301A1-301A4 are arranged in pixel areas 10 of 2×2 pixels constituting a shared block 221A. The response circuits 301A1-301A4 arranged in each pixel area 10 are laid out symmetrically in the up-down direction (for example, the column direction).

[0267] In each pixel area 10, the control transistor 318 is disposed close to the periphery of the pixel area 10. In other words, in the first layout modification, the control transistor 318 is disposed in an isolation region that electrically isolates adjacent photoelectric conversion elements 311. This allows the photoelectric conversion element 311 to be disposed in the center of the pixel area 10, making it possible to suppress a decrease in quantum efficiency depending on the incident angle of light. In addition, since it is possible to ensure a distance between adjacent photoelectric conversion elements 311, it is also possible to reduce color mixing caused by incident light leaking into adjacent pixels.

[0268] In the first layout modification, the reset transistor 373, the amplification transistor 375, and the selection transistor 376 constituting the pixel circuit 370 are disposed in the center of the 2×2 pixel layout constituting the shared block 221A. This makes it possible to shorten the length of the wiring connecting the floating diffusion region 374 to the amplification transistor 375 and the reset transistor 373 (and the dummy transistor 972), making it easy to optimize the capacitance (FD capacitance) of the floating diffusion region 374.

[0269] 7 is configured by connecting nMOS transistors 312 and 315 and nMOS transistors 313 and 316 arranged close to each other on opposing sides of adjacent pixel areas 10. This makes it possible to shorten the length of the wiring connecting the nMOS transistors 312 and 315 and the nMOS transistors 313 and 316, thereby making it possible to obtain effects such as improved operating performance due to a reduction in coupling capacitance.

[0270] Other configurations and effects may be similar to those of the layout example described above with reference to FIG. 36 or FIG. 37, and therefore detailed description thereof will be omitted here.

[0271] 8.2 Second layout variant In the second layout modification, a layout example of a shared block 221CC (see FIG. 35) according to a fourth sharing example of the first embodiment will be described. That is, in the second layout modification, the response circuits 301C1 to 301C4 include a common control transistor 318, and each of the response circuits 301C1 to 301C4 includes an individual control transistor 319. FIG. 61 is a plan view showing a layout example of a shared block according to the second layout modification.

[0272] As shown in Figure 61, in the second layout variant, in a layout similar to the first layout variant described above using Figure 60, each control transistor 319 is arranged at the position of each control transistor 318, and a common control transistor 318 is arranged at the position of the dummy transistor 972.

[0273] By adopting such a layout, it is possible to achieve the effects of suppressing the decrease in quantum efficiency and reducing color mixing, similar to the first layout modification example.

[0274] In addition, in the second layout variant, the common control transistor 318 is positioned in the center of the 2 × 2 pixel layout. Therefore, in a configuration capable of switching between EVS mode and CIS mode, it is possible to improve the operational stability when switching between EVS mode and CIS mode while suppressing reduction in the light receiving area, aperture ratio, saturation charge amount, etc. of the photoelectric conversion element 311.

[0275] The other configurations and effects may be similar to those of the first layout modification example described above with reference to FIG. 60, and therefore detailed description thereof will be omitted here.

[0276] 8.3 Third layout variant In the third layout modification, similarly to the second layout modification, a layout example of a shared block 221CC (see FIG. 35) according to a fourth sharing example of the first embodiment will be described. FIG. 62 is a plan view showing a layout example of a shared block according to the third layout modification.

[0277] As shown in Figure 62, in the third layout variant, in a layout similar to the second layout variant described above using Figure 61, individual control transistors 319 are arranged in the centre of the 2x2 pixel layout constituting the shared block 221CC, and pixel circuits 370 and control transistors 318 are arranged in the area adjacent to other shared blocks 221CC.

[0278] By using such a layout, as with the second layout variant, it is possible to improve operational stability when switching between EVS mode and CIS mode, and it is also possible to achieve effects such as suppressing reduction in quantum efficiency and reducing color mixing.

[0279] In addition, in the third layout modification, since each control transistor 319 is disposed in the center of the 2×2 pixel layout, it is possible to shorten the wiring length of the sense node SN, thereby making it possible to suppress deterioration of latency in the binning mode.

[0280] The other configurations and effects may be similar to those of the second layout modification example described above with reference to FIG. 61, and therefore detailed description thereof will be omitted here.

[0281] 8.4 Fourth layout variant In the fourth layout modification, similarly to the first layout modification, a layout example of the shared block 221A (see FIG. 32) according to the first sharing example of the first embodiment will be described. FIG. 63 is a plan view showing a layout example of the shared block according to the fourth layout modification.

[0282] 63, in the fourth layout modification, the response circuits 301A1-301A4 arranged in each pixel area 10 are all laid out to face the same direction. That is, in the fourth layout modification, the response circuits having the same layout are periodically arranged in the entire light receiving section 220.

[0283] By adopting such a layout, in the fourth layout variant, it is possible to reduce the positional misalignment of the photoelectric conversion element 311 with respect to the optical axis of the incident light and the difference between pixels in the wiring layout, thereby reducing the sensitivity difference between adjacent pixels and the variation in the amount of light leaking into adjacent pixels, thereby improving the uniformity of pixel sensitivity throughout the light receiving section 220.

[0284] The other configurations and effects may be similar to those of the first layout modification example described above with reference to FIG. 60, and therefore detailed description thereof will be omitted here.

[0285] 8.5 Fifth layout variant In the fifth layout modification, a layout example will be described in the case where the pixel circuit 370 is not included in the shared block, that is, where the response circuit is designed as an EVS. In this case, the response circuit 301Y (see FIG. 64) may be configured with the logarithmic response unit 310 / 310A described in the first embodiment with reference to FIG. 7. FIG. 64 is a plan view showing a layout example of the shared block according to the fifth layout modification.

[0286] 64, in the fifth layout modification, a photoelectric conversion element 311 is disposed in the center of a pixel area 10, and nMOS transistors 312 and 315 and nMOS transistors 313 and 316 are disposed to sandwich the photoelectric conversion element 311. One diffusion region of the nMOS transistor 313 is continuous with the photoelectric conversion element 311. Furthermore, one response circuit 301Y is configured by connecting the nMOS transistors 312 and 315 and the nMOS transistors 313 and 316 disposed in two adjacent pixel areas 10.

[0287] Such a layout allows the response circuits 301Y with the same layout to be arranged periodically over the entire light receiving section 220, so that it is possible to reduce the positional deviation of the photoelectric conversion element 311 with respect to the optical axis of the incident light and the difference between pixels in the wiring layout, as in the fourth layout modification. This reduces the sensitivity difference between adjacent pixels and the variation in the amount of light leaking into adjacent pixels, making it possible to improve the uniformity of pixel sensitivity over the entire light receiving section 220.

[0288] Other configurations and effects may be similar to those of the layout example described above with reference to FIG. 36 or FIG. 37, and therefore detailed description thereof will be omitted here.

[0289] 8.6 6th layout variant In the sixth layout modification, a layout example of a shared block 821C (see FIG. 55) according to a first sharing example of the fifth embodiment will be described. That is, in the sixth layout modification, a case is shown in which the shared block 821C is designed as a shared block for EVS, and the response circuits 301C1 to 301C4 each include an individual control transistor 318 and an individual control transistor 319. FIG. 65 is a plan view showing a layout example of a shared block according to the sixth layout modification.

[0290] As shown in Figure 65, in the sixth layout variant, in a layout similar to the first layout variant described above using Figure 60, individual control transistors 319 are arranged instead of the pixel circuits 370 and dummy transistors 972.

[0291] With such a layout, the photoelectric conversion element 311 can be arranged in the center of the pixel area 10, which makes it possible to achieve effects such as suppressing a decrease in quantum efficiency and reducing color mixing. Also, since each control transistor 318 is arranged in the center of the 2×2 pixel layout, it is possible to suppress deterioration of latency in the binning mode due to shortening the wiring length of the sense node SN.

[0292] The other configurations and effects may be similar to those of the first layout modification example described above with reference to FIG. 60, and therefore detailed description thereof will be omitted here.

[0293] 8.7 Seventh layout variant In the seventh layout modification, a layout example of a shared block 821CC (see FIG. 57) according to a third sharing example of the fifth embodiment will be described. That is, in the seventh layout modification, a case is shown in which a shared block 821C is designed as a shared block for EVS, and response circuits 301C1 to 301C4 include a common control transistor 318 and individual control transistors 319. FIG. 66 is a plan view showing a layout example of a shared block according to the seventh layout modification.

[0294] 66, in the seventh layout modification, in a layout similar to the sixth layout modification described above with reference to FIG 65, three of the four control transistors 318 are replaced with dummy transistors 973. The gate of the dummy transistor 973 may be constantly in an off state.

[0295] By using such a layout, similarly to the sixth layout modification example, it is possible to suppress deterioration of the latency in the binning mode in addition to obtaining effects such as suppressing a decrease in quantum efficiency and reducing color mixing.

[0296] The other configurations and effects may be similar to those of the sixth layout modification example described above with reference to FIG. 65, and therefore detailed description thereof will be omitted here.

[0297] 9. Ninth embodiment Next, a ninth embodiment of the present disclosure will be described. In EVS, even if the illuminance does not change, false detection may occur due to noise. The rate at which false detection occurs is called BGR (Background Rate). It is considered that such BGR increases when the detection sensitivity of the illuminance change is increased.

[0298] It is known that the noise that causes BGR is, for example, in the above-mentioned embodiment, dominated by thermal noise generated in the reset transistor 373, the amplification transistor 375, and the selection transistor 376 that constitute the pixel circuit 370, and the nMOS transistors 312 and 316 included in the logarithmic conversion circuit. Since BGR is further caused by this noise being propagated to the comparator, it is understood that the frequency bandwidth of the circuit from the pixel to the comparator is a determining factor of BGR.

[0299] Since the above-mentioned bandwidth is determined by the pixel content volume on the light receiving chip 201 side and the bandwidth of each block of the source follower (e.g., buffer 330) and comparison unit 500 configured on the detection chip 202 side, it has been found from the simulation results that it is also sensitive to the pixel content volume.

[0300] 18, the EVS according to the embodiment described above is composed of a detection pixel 300 including a logarithmic response unit 310 / 310A, a buffer 330, and a differentiator 340, and a detection circuit 305 including a selection unit 400, a comparison unit 500, and a transfer circuit 360. In the following description, for simplification, a case where the logarithmic response unit 310A is used is illustrated.

[0301] The logarithmic response unit 310A converts the photocurrent flowing out from the photoelectric conversion element 311 into a voltage signal corresponding to the logarithmic value, and outputs the voltage signal to an output node (this node is referred to as node N4 (see FIG. 7)) connected to the gate of the nMOS transistor 315. Note that the configuration of the logarithmic response unit 310 / 310A is not limited to this. For example, the number of nMOS transistors connected in series is two in the example shown in FIG. 6 and three in the example shown in FIG. 7, but it is also possible to have four or more. Also, the number of nMOS transistors connected in series to the photoelectric conversion element 311 may be different from the number of nMOS transistors connected in series opposite thereto.

[0302] In the logarithmic response unit 310 / 310A having such a configuration, noise may occur from the nMOS transistors 312, 313, 315, and 316 that configure the logarithmic conversion circuit. The generated noise is input to the detection circuit 305 via node N4. Therefore, the detection circuit 305 reacts to voltage fluctuations caused by noise, which may result in a detection signal being output (false detection) even if the amount of incident light does not change.

[0303] Regarding this problem, the present inventors have discovered that the mutual coupling capacitances of the nodes N1 to N4 (see FIG. 7) and the coupling capacitances between each of the nodes N1 to N4 and the power supplies (VDD, GND, VSS) are related to BGR.

[0304] Therefore, in this embodiment, the structure and positional relationship between the nodes N1 to M4 and the power lines are controlled so as to satisfy one or more of the following exemplary conditions. Note that in this embodiment, the nodes N1 to M4 and the power lines are assumed to be configured with two or more wiring layers M1, M2, ....

[0305] (First condition) Each capacitance is configured so that the N1-N2 capacitance, N1-N3 capacitance, N1-N4 capacitance, and N3-N4 capacitance between same-layer wirings configured in the first wiring layer M1 are larger than the N1-N2 capacitance, N1-N3 capacitance, N1-N4 capacitance, and N3-N4 capacitance configured in the second wiring layer M2 and above.

[0306] (Second condition) A shield layer is placed between the N1-N2 capacitor, N1-N3 capacitor, N1-N4 capacitor, and N3-N4 capacitor, which are configured from the second wiring layer and above, and the semiconductor substrate on which various transistors are formed, to reduce the capacitance between the N1 wiring, N3 wiring, and the semiconductor substrate. The shield layer may be wiring (e.g., power supply line, etc.) configured from another wiring layer, or may be an insulating layer remaining after removing the wiring pattern from another wiring layer.

[0307] (Third condition) The N1-N2 capacitance, N1-N3 capacitance, N1-N4 capacitance, and N3-N4 capacitance are configured, for example, in a MOM (Metal-Oxide-Metal) structure such as a comb-tooth structure, or a MIM (Metal-Insulator-Metal) structure using a wiring interlayer insulating film, and the N4 wiring is arranged on the substrate side, thereby increasing the coupling capacitance between the node N4 and the semiconductor substrate (hereinafter referred to as N4-substrate capacitance) and reducing the coupling capacitance between the node N1 and the semiconductor substrate (hereinafter referred to as N1-substrate capacitance) and the coupling capacitance between the node N3 and the semiconductor substrate (hereinafter referred to as N3-substrate capacitance). In this case, for example, the first wiring layer or the gate electrodes of various transistors may be used for the N4 wiring.

[0308] 9.1 Wiring structure example Next, some examples of wiring structures that are configured to satisfy at least one of the above conditions will be described. In the following description, for simplicity, a semiconductor substrate (semiconductor substrate 1001 described below) and a wiring layer (interlayer insulating film 1010 described below) on which nodes N1 to N4 are arranged are excerpted. In this description, node N1 may be the sense node SN described above.

[0309] 67 to 70 are diagrams showing examples of wiring structures designed to satisfy at least one of the above conditions, where FIG. 67 is a cross-sectional view showing a wiring structure according to a first example, FIG. 68 is a cross-sectional view showing a wiring structure according to a second example, FIG. 69 is a cross-sectional view showing a wiring structure according to a third example, and FIG. 70 is a cross-sectional view showing a wiring structure according to a fourth example. In the first to fourth examples, the wirings constituting the nodes N1 to N4 (hereinafter referred to as N1 wiring, N2 wiring, N3 wiring, and N4 wiring, respectively) and the power supply lines (VDD, GND, and VSS) are arranged across three wiring layers M1 to M3. However, since FIG. 67 to FIG. 70 are cross-sectional views in which the N2 wiring is not exposed, the N2 wiring is not shown.

[0310] 67 to 70, in the first to fourth examples, various transistors 1004 constituting the pixel circuit 370 and / or the logarithmic response unit 310 / 310A are formed with a gate insulating film 1003 sandwiched between them in a p-type well layer 1002 arranged on the element formation surface side of a semiconductor substrate 1001. In addition, an interlayer insulating film 1010 including N1 wiring, N2 wiring, N3 wiring, N4 wiring and power supply lines (VDD, GND, VSS) is arranged on the element formation surface on which the various transistors 1004 are formed.

[0311] (1st wiring layer M1) Of the three wiring layers M1 to M3 provided on the interlayer insulating film 1010, the first wiring layer M1 closest to the semiconductor substrate 1001 is mainly provided with N4 wiring. However, in the first wiring layer M1, some or all of the other wirings (N1 to N3 wirings, power supply lines, etc.) may be provided depending on the purpose such as to connect with various transistors 1004 provided on the element formation surface.

[0312] The N4 wiring arranged in the first wiring layer M1 may have a comb-tooth structure having two or more comb teeth (hereinafter, referred to as comb-tooth wiring) extending in a direction parallel to the element forming surface as in the first example shown in Fig. 67, or may be a solid pattern having a main surface parallel to the element forming surface as in the second example shown in Fig. 68. However, it is not limited to this and may be variously modified, such as a solid pattern having a comb-tooth structure or an opening in a part of it.

[0313] In this way, by arranging the N4 wiring in the first wiring layer M1 closest to the semiconductor substrate 1001, it is possible to increase the coupling capacitance (N4-substrate capacitance) between the N4 wiring and the semiconductor substrate 1001 (which may include the well layer 1002; the same applies below). In addition, since the N4 wiring can function as a shield layer for other wirings formed in the second wiring layer M2 or higher layers, it is possible to suppress an increase in the coupling capacitance (N1-substrate capacitance, N2-substrate capacitance, N3-substrate capacitance) between the N1 to N3 wirings and the semiconductor substrate 1001.

[0314] 69, the N1 to N4 wires may not be arranged in the first wiring layer M1 (see region R2-2). This makes it possible to ensure a distance between the N1 to N3 wires formed in the second wiring layer M2 or higher and the semiconductor substrate 1001, thereby making it possible to suppress an increase in the coupling capacitance between the N1 to N3 wires and the semiconductor substrate 1001.

[0315] Furthermore, as in the fourth example shown in FIG. 70, when a gate electrode 1005 provided on a semiconductor substrate 1001 is used as a node N4, other wirings (N1 wiring, N2 wiring, N3 wiring) may be arranged in the area above the gate electrode 1005 in the first wiring layer M1, and the capacitance between N1 and N4 and the capacitance between N3 and N4 may be configured as MIM capacitance.

[0316] (2nd wiring layer M2) The second wiring layer M2 on the first wiring layer M1 may mainly include one or more wirings selected from N1 wiring, N2 wiring, and N3 wiring. However, the second wiring layer M2 may include some or all of other wirings (N4 wiring, power supply line, etc.) depending on the purpose of adjusting the coupling capacitance between wirings. For example, as shown in Figs. 67 to 70, by disposing the comb-tooth wiring constituting the N4 wiring between the comb-tooth wirings constituting the N1 wiring, N2 wiring, and N3 wiring, comb-tooth capacitances are formed between the N1 wiring, N2 wiring, N3 wiring, and the N4 wiring, respectively, and therefore it is possible to increase the N1-N4 capacitance, the N2-N4 capacitance, and the N3-N4 capacitance.

[0317] In the second example shown in Fig. 68, an MIM capacitance may be formed between the N1 wiring arranged in the second wiring layer M2 and the N4 wiring arranged in the first wiring layer M1. In the fourth example shown in Fig. 70, an MIM capacitance may be formed between the N3 wiring arranged in the second wiring layer M2 and the gate electrode 1005 arranged in the first wiring layer M1, and between the N1 wiring arranged in the second wiring layer M2 and the gate electrode 1005 arranged in the first wiring layer M1.

[0318] (Third wiring layer M3 and above) Furthermore, when the third wiring layer M3 and higher wiring layers are arranged on the second wiring layer M2, comb-tooth capacitance may be formed by arranging N1 to N4 wirings and / or power lines according to the coupling capacitance required for each wiring, as in the second wiring layer M2.

[0319] In this case, it is preferable to arrange power lines (VDD, GND, VSS) on the top layer (the third wiring layer M3 in this example), which allows the power lines to function as a shield layer against electromagnetic interference from the outside of the detection chip 202, etc., thereby improving the operational stability.

[0320] Moreover, by further arranging an N4 wiring on the top layer, a comb-tooth capacitance may be formed between the N4 wiring and the power supply line.

[0321] Among the comb-tooth capacitors configured as described above, the comb-tooth capacitors configured with the N4 wiring and other wirings may be configured so that the N4 wiring is arranged on the outermost periphery. Also, it is preferable that a power supply line is arranged next to the N4 wiring located on the outermost periphery.

[0322] 9.2 Effects As described above, by designing the N1 to N4 wires and the power supply lines (VDD, GND, VSS) so as to satisfy at least one of the first to third conditions, it is possible to achieve the effects exemplified below.

[0323] By arranging an N4 wire in the first wiring layer M1 and arranging a comb-tooth capacitor with the N1 wires to N3 wires as one electrode in the second wiring layer M2 or a higher layer, the first wiring layer M1 can function as a shielding layer that blocks the electric field between the N1 wires to N3 wires and the power supply lines (VDD, GND, VSS), thereby reducing the coupling capacitance between the N1 wires to N3 wires and the semiconductor substrate 1001, and thereby making it possible to reduce the BGR.

[0324] By arranging the N4 wiring in the first wiring layer M1 and forming a large-area N4-substrate capacitance, a large-capacity N4-substrate capacitance is formed, which makes it possible to significantly reduce the BGR.

[0325] By arranging the comb capacitances N3-N4 capacitance, N2-N4 capacitance, N1-N4 capacitance, N1-N3 capacitance, N1-N2 capacitance, and N4-power line capacitance in the second wiring layer M2 or a layer higher than this, it is possible to increase these capacitances without increasing the coupling capacitance between the N1 wiring to N4 wiring and the semiconductor substrate 1001, thereby making it possible to reduce the BGR.

[0326] By arranging the N4 wiring in the first wiring layer M1 and the N1 to N3 wirings in the second wiring layer M2, a coupling capacitance is formed between the N1 to N3 wirings and the N4 wiring by the interlayer insulating film that constitutes the interlayer insulating film 1010, making it possible to reduce the BGR.

[0327] By making the outermost periphery of the comb-tooth capacitance the N4 wiring, the coupling between the N1 to N3 wirings in the same layer and the power supply line is shielded by the N4 wiring in the same layer, so it is possible to increase the N4-power supply line capacitance while reducing the coupling capacitance between the N1 to N3 wirings and the power supply line, thereby making it possible to reduce the BGR.

[0328] 9.3 Wiring layout examples Next, a specific layout example of the N1 to N4 wirings and power lines (VDD, GND, VSS) according to this embodiment will be described. For simplification, the following description focuses on the N1 to N4 wirings and power lines (VDD, GND, VSS) arranged for the response circuit 301. This example illustrates a case where the interlayer insulating film 1010 is composed of four layers, the first wiring layer M1 to the fourth wiring layer M4.

[0329] Fig. 71 is a plan view showing an example of a wiring layout of the first wiring layer M1, Fig. 72 is a plan view showing an example of a wiring layout of the second wiring layer M2, Fig. 73 is a plan view showing an example of a wiring layout of the third wiring layer M3, and Fig. 74 is a plan view showing an example of a wiring layout of the fourth wiring layer M4. Fig. 75 is a cross-sectional view showing an example of a cross-sectional structure of the A-A' cross section in Figs. 71 to 74. Fig. 76 is a plan view showing an example of a wiring layout of the first wiring layer M1 according to a modified example.

[0330] 71 to 75, in the first wiring layer M1, N4 wiring having a comb-tooth structure is arranged in most of the pixel area 10, and power supply lines (VDD, GND, VSS) are arranged to surround the periphery of the N4 wiring. In addition, in the first wiring layer M1, some of the N1 wiring to N3 wiring are arranged to electrically connect to various transistors constituting the response circuit 301.

[0331] In the second wiring layer M2, the comb-tooth wirings are arranged so that the N4 wiring and the N1 wiring or N3 wiring are alternately arranged. At this time, the N4 wiring is arranged on the outermost periphery. In addition, in the third wiring layer M3, the power supply line VDD is arranged so as to surround the N4 wiring.

[0332] In the fourth wiring layer M4, which is the top layer, the comb-tooth wirings are arranged so that the N4 wirings and the N3 wirings are arranged alternately, and are surrounded by the power supply line GND.

[0333] 71 and 72, it is preferable that the extension direction of the comb-tooth wiring arranged in one wiring layer (in this example, the first wiring layer M1) is not parallel to (perpendicular to) the extension direction of the comb-tooth wiring arranged in another wiring layer (in this example, the second wiring layer M2). This allows light that passes through the photoelectric conversion element 311 and enters the interlayer insulating film 1010 to be reflected by the N1 to N4 wirings and the power supply line and returned to the photoelectric conversion element 311, thereby improving quantum efficiency.

[0334] Moreover, as shown in FIG. 76, the N4 wires arranged in the first wiring layer M1 may have a solid pattern instead of the comb-tooth structure as described above.

[0335] 10. Tenth embodiment Next, a tenth embodiment of the present disclosure will be described. In the above-mentioned embodiment, when the EVS mode and the CIS mode are driven simultaneously, the potential of the sense node SN may fluctuate due to a potential change of the transfer signal TRG when driving the transfer transistor 372 of the pixel circuit 370, which may cause a false detection or a dead period in the EVS operation. This will be described using a circuit configuration example of a shared block shown in FIG. 77 and a connection example of the transfer transistor 372 and the switching transistor 317 with each of the drive lines TG11 to TG42 shown in FIG. 78. The shared block 221Z shown in FIG. 77 is configured by omitting the control transistor 318 from the shared block 221A described above using FIG. 32, but this is merely an example, and the configuration of the shared block 221Z is not limited to this.

[0336] As shown in Fig. 77, in the hybrid mode in which the EVS mode and the CIS mode are driven simultaneously, one pixel (e.g., the response circuit 301A1) of the total of four pixels (e.g., the response circuits 301A1 to 301A4) constituting the shared block 221X operates in the EVS mode to constantly detect luminance changes, and the remaining three pixels (e.g., the response circuits 301A2 to 301A4) operate in the CIS mode to generate a gradation image at a predetermined frame rate. This makes it possible to obtain a gradation image at the moment when the luminance change occurs, for example, for an area in which a luminance change is detected in the EVS mode.

[0337] However, as shown in FIG. 78, in the hybrid mode, a transfer signal for transferring signal charges from the photoelectric conversion element 311 to the floating diffusion region 374 is repeatedly applied at a predetermined period to the drive lines TG22, TG32, and TG42 connected to the gates of the transfer transistors 372 of three pixels operating in CIS mode (response circuits 301A2 to 301A4. Hereinafter, the pixels operating in CIS mode are also referred to as CIS pixels (corresponding to the gradation pixels described above)), while an off voltage is constantly applied to the drive line TG12 connected to the gate of the transfer transistor 372 of a pixel operating in EVS mode (response circuit 301A1. Hereinafter, the pixels operating in EVS mode are also referred to as EVS pixels (corresponding to the detection pixels described above)).

[0338] Therefore, if there is a coupling capacitance between the driving lines TG22, TG32, and TG42 connected to the CIS pixel (response circuits 301A2 to 301A4) and the sense node SN in the EVS pixel (response circuit 301A1), the SN potential of the sense node SN fluctuates due to electrostatic induction in response to a change in the potential of the transfer signal applied to the driving lines TG22, TG32, and TG42. Then, similar to the case where the SN potential fluctuates when transitioning from the CIS mode to the EVS mode, the operation of the logarithmic response unit 310 / 310A of the EVS pixel may be affected, resulting in false detection or a dead period. Note that such fluctuations in the SN potential of the sense node SN may also occur due to, for example, a selection signal or a reset signal, in addition to the transfer signal.

[0339] Therefore, in this embodiment, by reducing the coupling capacitance between the drive lines connected to the gates of the transfer transistor 372, selection transistor 376, and reset transistor 373 of the CIS pixel and the sense node SN of the EVS pixel, problems caused by the transfer signal fluctuating the SN potential of the sense node SN are avoided.

[0340] 10.1 Cross-sectional structure and wiring layout example Fig. 79 is a cross-sectional view showing an example of a wiring structure according to this embodiment. For the sake of simplicity, Fig. 79 shows only a semiconductor substrate 1001 and an interlayer insulating film 1010 on which nodes N1 to N4 are arranged. Fig. 80 is a plan view showing an example of a wiring layout of a first wiring layer M1, Fig. 81 is a plan view showing an example of a wiring layout of a second wiring layer M2, Fig. 82 is a plan view showing an example of a wiring layout of a third wiring layer M3, and Fig. 83 is a plan view showing an example of a wiring layout of a fourth wiring layer M2.

[0341] 79 to 83, in this embodiment, the drive lines LD connected to the gates of the transfer transistor 372, reset transistor 373, and selection transistor 376 constituting the pixel circuit 370 are arranged in a wiring layer different from the sense node SN. In the example shown in Figures 79 to 83, the drive line TG11 of the drive lines LD is arranged in the fourth wiring layer M4, which is the uppermost layer in the interlayer insulating film 1010, and the sense node SN is arranged in the first wiring layer M1 and the second wiring layer M2.

[0342] In this embodiment, a wiring (hereinafter, also referred to as a shield wiring) 1012 functioning as an electromagnetic shield is arranged between the driving line LD and the sense node SN. In the example shown in Fig. 79, the shield wiring 1012 is arranged in the third wiring layer M3 between the first wiring layer M1 and the second wiring layer M2 in which the sense node SN is arranged, and the fourth wiring layer M4 in which the driving line LD is arranged. This shield wiring 1012 may be, for example, N2 to N4 wirings or power supply lines (VDD, GND, VSS), etc.

[0343] Furthermore, the driving line LD is connected to the pixel circuit 370 (transfer transistor 372 in the example shown in FIG. 79 to FIG. 83) provided on the element formation surface of the semiconductor substrate 1001 through a via wiring 1011 formed in the interlayer insulating film 1010. Therefore, when the driving line LD is arranged in a wiring layer above the sense node SN, the wiring (also a part of the driving line LD) connecting the driving line LD and the pixel circuit 370 penetrates the wiring layer in which the sense node SN is provided. Therefore, in this embodiment, a shield wiring 1012 functioning as an electromagnetic shield is provided between the driving line LD and the sense node SN, which penetrates the wiring layer, in the same layer as the wiring layer in which the sense node SN is provided. In the example shown in FIG. 79 to FIG. 83, the shield wiring is arranged in the region R12 between the driving line LD in the region R13 connecting the driving line TG11 of the fourth wiring layer M4 and the gate of the transfer transistor 372 in the response circuit 301A1 and the sense node SN in the other response circuit 301A2 (and 301A3, 301A4). The shield wiring may be, for example, the N2 wiring to the N4 wiring or the power supply lines (VDD, GND, VSS).

[0344] In this way, by disposing the shield wiring 1012 between the sense node SN and the drive line LD, the coupling capacitance between the sense node SN and the drive line LD is reduced, which suppresses fluctuations in the SN potential caused by potential changes in the drive signal applied to the drive line LD, making it possible to suppress the occurrence of false detections and dead periods.

[0345] Furthermore, in this embodiment, the wiring connecting the drive line LD and the gates of various transistors on the semiconductor substrate 1001 (for example, the drive line LD in region R13 in the examples shown in FIGS. 79 to 83) is made to be substantially perpendicular to the element formation surface of the semiconductor substrate 1001. This makes it possible to reduce the opposing area between the sense node SN and the drive line LD, and therefore makes it possible to reduce the coupling capacitance between the sense node SN and the drive line LD. As a result, fluctuations in the SN potential due to the drive signal applied to the drive line LD are suppressed, making it possible to suppress the occurrence of erroneous detection and dead periods.

[0346] 11. Mobile application examples The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of moving body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility device, an airplane, a drone, a ship, a robot, etc.

[0347] FIG. 84 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a moving object control system to which the technology of the present disclosure can be applied.

[0348] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 84, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also, as functional configurations of the integrated control unit 12050, a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (interface) 12053 are illustrated.

[0349] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0350] The body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as head lamps, back lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves or signals of various switches transmitted from a portable device that replaces a key may be input to the body system control unit 12020. The body system control unit 12020 receives the input of these radio waves or signals and controls the door lock device, power window device, lamps, and the like of the vehicle.

[0351] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture an image outside the vehicle and receives the captured image. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for a person, a car, an obstacle, a sign, or characters on a road surface, based on the received image.

[0352] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal according to the amount of light received. The imaging unit 12031 can output the electrical signal as an image, or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0353] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing.

[0354] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, the steering mechanism, or the braking device based on the information inside and outside the vehicle acquired by the outside-of-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output a control command to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane departure warning, etc.

[0355] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on the driver's operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle acquired by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0356] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside-vehicle information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside-vehicle information detection unit 12030, and perform cooperative control for the purpose of preventing glare, such as switching from high beams to low beams.

[0357] The audio / video output unit 12052 transmits at least one output signal of audio and video to an output device capable of visually or audibly notifying information to passengers in the vehicle or the outside of the vehicle. In the example of Fig. 85, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as the output device. The display unit 12062 may include at least one of an on-board display and a head-up display, for example.

[0358] FIG. 85 is a diagram showing an example of the installation position of the imaging unit 12031.

[0359] In FIG. 85, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0360] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided at positions such as the front nose, side mirrors, rear bumper, back door, and the upper part of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided at the front nose and the imaging unit 12105 provided at the upper part of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided at the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided at the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 provided at the upper part of the windshield inside the vehicle cabin is mainly used to detect a preceding vehicle, a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.

[0361] 85 shows an example of the imaging ranges of the imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, an overhead image of the vehicle 12100 viewed from above is obtained by superimposing the image data captured by the imaging units 12101 to 12104.

[0362] At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera made up of a plurality of imaging elements, or may be an imaging element having pixels for detecting a phase difference.

[0363] For example, the microcomputer 12051 can extract, as a preceding vehicle, a three-dimensional object that is the closest three-dimensional object on the travel path of the vehicle 12100 and travels at a predetermined speed (for example, 0 km / h or more) in approximately the same direction as the vehicle 12100, by calculating the distance to each three-dimensional object in the imaging ranges 12111 to 12114 and the change over time of this distance (relative speed with respect to the vehicle 12100) based on the distance information obtained from the imaging units 12101 to 12104. Furthermore, the microcomputer 12051 can set a vehicle distance to be secured in advance in front of the preceding vehicle, and perform automatic brake control (including follow-up stop control) and automatic acceleration control (including follow-up start control). In this way, cooperative control can be performed for the purpose of automatic driving that travels autonomously without relying on the driver's operation.

[0364] For example, the microcomputer 12051 classifies and extracts three-dimensional object data on three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. Then, the microcomputer 12051 determines a collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0365] At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the captured images of the imaging units 12101 to 12104. The recognition of such a pedestrian is performed, for example, by a procedure of extracting feature points in the captured images of the imaging units 12101 to 12104 as infrared cameras, and a procedure of performing pattern matching processing on a series of feature points that indicate the contour of an object to determine whether or not the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the captured images of the imaging units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular contour line for emphasis on the recognized pedestrian. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating a pedestrian at a desired position.

[0366] An example of a vehicle control system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to the imaging unit 12031 of the above-described configuration. Specifically, the imaging device 100 of FIG. 1 can be applied to the imaging unit 12031. By applying the technology according to the present disclosure to the imaging unit 12031, pixels can be miniaturized to obtain a captured image that is easier to see, thereby reducing driver fatigue.

[0367] The above-mentioned embodiment shows an example for realizing the present technology, and the matters in the embodiment and the matters specified in the claims correspond to each other. Similarly, the matters specified in the claims and the matters in the embodiment of the present technology having the same name correspond to each other. However, the present technology is not limited to the embodiment, and can be realized by applying various modifications to the embodiment without departing from the gist of the technology.

[0368] It should be noted that the effects described in this specification are merely examples and are not limiting, and other effects may also be obtained.

[0369] The present technology can also be configured as follows. (1) A plurality of pixels each outputting a luminance change of incident light; a detection circuit that outputs an event signal based on the luminance change output from each of the pixels; Equipped with Each of the pixels is a photoelectric conversion element that generates an electric charge according to the amount of incident light; a logarithmic conversion circuit connected to the photoelectric conversion element and configured to convert a photocurrent flowing out from the photoelectric conversion element into a voltage signal corresponding to a logarithmic value of the photocurrent; a first transistor having a drain connected to a sense node of the logarithmic conversion circuit; Equipped Solid-state imaging device. (2) The solid-state imaging device according to (1), wherein the source of the first transistor is connected to a first potential that is equal to or higher than a reference potential and lower than a power supply voltage. (3) Each of the pixels further includes a first circuit that outputs a luminance change of incident light incident on the photoelectric conversion element based on the voltage signal output from the logarithmic conversion circuit; The detection circuit includes a second circuit that outputs the event signal based on the luminance change output from each of the pixels. The solid-state imaging device according to (2) above. (4) The solid-state imaging device according to (2), wherein the reference potential is a negative potential or a ground potential. (5) The solid-state imaging device according to (2), wherein the first potential is a potential lower than a potential of the sense node during normal operation of the logarithmic conversion circuit. (6) The logarithmic conversion circuit includes: a second transistor having a gate connected to the photoelectric conversion element; a third transistor having a source connected to the photoelectric conversion element; Equipped with a gate of the third transistor is connected to a drain of the second transistor; The sense node is a wiring connected to the gate of the second transistor. The solid-state imaging device according to any one of (2) to (5) above. (7) The solid-state imaging device described in (6), wherein each of the pixels further includes a fourth transistor having a drain connected to the gate of the second transistor and the source of the third transistor and a source connected to the photoelectric conversion element. (8) Each of the pixels is a fifth transistor having a source connected to the photoelectric conversion element; a readout circuit connected to a drain of the fifth transistor and configured to generate a pixel signal corresponding to the charge generated in the photoelectric conversion element; The solid-state imaging device according to (7) above, further comprising: (9) The solid-state imaging device according to (8), wherein the first transistor is connected to the sense node via the fifth transistor and the fourth transistor. (10) The solid-state imaging device according to (8) or (9), wherein each of the pixels further includes a sixth transistor connected to the drain of the fourth transistor and the drain of the fifth transistor. (11) The solid-state imaging device according to (10), wherein the first transistor is connected to the sense node via the sixth transistor. (12) the read circuit includes a first transistor having a source connected to the drain of the fifth transistor and a drain connected to the first potential; The solid-state imaging device according to any one of (8) to (11) above. (13) The solid-state imaging device according to (12), wherein each of the pixels further includes a sixth transistor connected to the drain of the fourth transistor and the drain of the fifth transistor. (14) The solid-state imaging device according to any one of (8) to (13), wherein the first transistor is connected to the sense node via the fourth transistor. (15) Each of the pixels is a fifth transistor having a source connected to the drain of the fourth transistor; a sixth transistor having a drain connected to the drain of the fourth transistor, the source of the third transistor, and the gate of the second transistor, and a source connected to the drain of the fifth transistor; Further equipped with The first transistor is connected to the sense node via the sixth transistor. The solid-state imaging device according to (7) above. (16) Each of the pixels further includes a readout circuit connected to the drain of the fifth transistor and configured to generate a pixel signal according to the charge generated in the photoelectric conversion element; the read circuit includes a first transistor having a source connected to the drain of the fifth transistor and a drain connected to the first potential; The solid-state imaging device according to (15) above. (17) The solid-state imaging device according to any one of (1) to (16), wherein the logarithmic conversion circuit includes a bias circuit that controls a current flowing through the logarithmic conversion circuit. (18) Each of the pixels further includes a fifth transistor having a source connected to the photoelectric conversion element, a common line commonly connecting the drains of the fifth transistors among the plurality of pixels; The solid-state imaging device according to any one of (1) to (17) above. (19) The solid-state imaging device according to (18), further comprising a readout circuit connected to the common line and generating a pixel signal according to the charge generated in the photoelectric conversion element of each of the pixels. (20) The solid-state imaging device according to (18) or (19), wherein the first transistor is connected to the common line and shared by the plurality of pixels. (twenty one) the photoelectric conversion elements included in each of the plurality of pixels are arranged in a matrix on an element formation surface of a semiconductor substrate; The first transistor is disposed on the element formation surface between the photoelectric conversion elements arranged in the matrix. The solid-state imaging device according to any one of (1) to (20) above. (twenty two) the photoelectric conversion elements included in each of the plurality of pixels are arranged in a matrix on an element formation surface of a semiconductor substrate; The sixth transistor is disposed on the element forming surface between the photoelectric conversion elements arranged in the matrix. The solid-state imaging device according to (10) above. (twenty three) The solid-state imaging device according to (21) or (22), wherein the photoelectric conversion elements and the first transistors are periodically arranged in the matrix on the element formation surface. (twenty four) A plurality of pixels each outputting a luminance change of incident light; a detection circuit that outputs an event signal based on the luminance change output from each of the pixels; Equipped with Each of the pixels is a photoelectric conversion element that generates an electric charge according to the amount of incident light; a logarithmic conversion circuit connected to the photoelectric conversion element and configured to convert a photocurrent flowing out from the photoelectric conversion element into a voltage signal corresponding to a logarithmic value of the photocurrent; Equipped with the photoelectric conversion elements included in each of the plurality of pixels are arranged in a matrix on an element formation surface of a semiconductor substrate; The logarithmic conversion circuit includes: a first transistor having a gate connected to the photoelectric conversion element; a second transistor having a source connected to the photoelectric conversion element and a gate connected to the drain of the first transistor; a third transistor having a source connected to the drain of the first transistor and the gate of the second transistor and a gate connected to the drain of the second transistor; a fourth transistor having a source connected to the drain of the second transistor and the gate of the third transistor and a gate connected to the drain of the third transistor; Equipped with a first wiring connected to a gate of the first transistor; a second wiring that connects the gate of the second transistor and the drain of the first transistor; a third wiring that connects the gate of the third transistor and the drain of the second transistor; a fourth wiring that connects the gate of the fourth transistor and the drain of the third transistor; Further equipped with the first wiring to the fourth wiring are distributed among a plurality of wiring layers in an interlayer insulating film disposed on the element forming surface side of the semiconductor substrate, At least a part of the fourth wiring is arranged in a wiring layer that is closest to the semiconductor substrate side among the plurality of wiring layers arranged in the interlayer insulating film. Solid-state imaging device. (twenty five) A plurality of pixels each outputting a luminance change of incident light; a detection circuit that outputs an event signal based on the luminance change output from each of the pixels; Equipped with Each of the pixels is a photoelectric conversion element that generates an electric charge according to the amount of incident light; a logarithmic conversion circuit connected to the photoelectric conversion element and configured to convert a photocurrent flowing out from the photoelectric conversion element into a voltage signal corresponding to a logarithmic value of the photocurrent; Equipped with the photoelectric conversion elements included in each of the plurality of pixels are arranged in a matrix on an element formation surface of a semiconductor substrate; The logarithmic conversion circuit includes: a first transistor having a gate connected to the photoelectric conversion element; a second transistor having a source connected to the photoelectric conversion element and a gate connected to the drain of the first transistor; a third transistor having a source connected to the drain of the first transistor and the gate of the second transistor and a gate connected to the drain of the second transistor; a fourth transistor having a source connected to the drain of the second transistor and the gate of the third transistor and a gate connected to the drain of the third transistor; Equipped with a first wiring connected to a gate of the first transistor; a second wiring that connects the gate of the second transistor and the drain of the first transistor; a third wiring that connects the gate of the third transistor and the drain of the second transistor; a fourth wiring that connects the gate of the fourth transistor and the drain of the third transistor; Further equipped with the first wiring to the fourth wiring are distributed among a plurality of wiring layers in an interlayer insulating film disposed on the element forming surface side of the semiconductor substrate, At least one of the first wiring to the fourth wiring has a comb-tooth structure. Solid-state imaging device. (26) A plurality of pixels each outputting a luminance change of incident light; a detection circuit that outputs an event signal based on the luminance change output from each of the pixels; Equipped with Each of the pixels is a photoelectric conversion element that generates an electric charge according to the amount of incident light; a logarithmic conversion circuit connected to the photoelectric conversion element and configured to convert a photocurrent flowing out from the photoelectric conversion element into a voltage signal corresponding to a logarithmic value of the photocurrent; Equipped with the photoelectric conversion elements included in each of the plurality of pixels are arranged in a matrix on an element formation surface of a semiconductor substrate; The logarithmic conversion circuit includes: a first transistor having a gate connected to the photoelectric conversion element; a second transistor having a source connected to the photoelectric conversion element and a gate connected to the drain of the first transistor; a third transistor having a source connected to the drain of the first transistor and the gate of the second transistor and a gate connected to the drain of the second transistor; a fourth transistor having a source connected to the drain of the second transistor and the gate of the third transistor and a gate connected to the drain of the third transistor; Equipped with a first wiring connected to a gate of the first transistor; a second wiring that connects the gate of the second transistor and the drain of the first transistor; a third wiring that connects the gate of the third transistor and the drain of the second transistor; a fourth wiring that connects the gate of the fourth transistor and the drain of the third transistor; Further equipped with the first wiring to the fourth wiring are distributed among a plurality of wiring layers in an interlayer insulating film disposed on the element forming surface side of the semiconductor substrate, at least a part of the fourth wiring is disposed in a wiring layer that is closest to the semiconductor substrate side among the plurality of wiring layers disposed in the interlayer insulating film; At least a part of the fourth wiring arranged in the wiring layer closest to the semiconductor substrate side is a solid pattern. Solid-state imaging device. (27) A plurality of pixels each outputting a luminance change of incident light; a detection circuit that outputs an event signal based on the luminance change output from each of the pixels; Equipped with Each of the pixels is a photoelectric conversion element that generates an electric charge according to the amount of incident light; a logarithmic conversion circuit connected to the photoelectric conversion element and configured to convert a photocurrent flowing out from the photoelectric conversion element into a voltage signal corresponding to a logarithmic value of the photocurrent; Equipped with the photoelectric conversion elements included in each of the plurality of pixels are arranged in a matrix on an element formation surface of a semiconductor substrate; The logarithmic conversion circuit includes: a first transistor having a gate connected to the photoelectric conversion element; a second transistor having a source connected to the photoelectric conversion element and a gate connected to the drain of the first transistor; a third transistor having a source connected to the drain of the first transistor and the gate of the second transistor and a gate connected to the drain of the second transistor; a fourth transistor having a source connected to the drain of the second transistor and the gate of the third transistor and a gate connected to the drain of the third transistor; Equipped with a first wiring connected to a gate of the first transistor; a second wiring that connects the gate of the second transistor and the drain of the first transistor; a third wiring that connects the gate of the third transistor and the drain of the second transistor; a fourth wiring that connects the gate of the fourth transistor and the drain of the third transistor; Further equipped with the first wiring to the fourth wiring are distributed among a plurality of wiring layers in an interlayer insulating film disposed on the element forming surface side of the semiconductor substrate, the wiring layer closest to the semiconductor substrate includes gate electrodes of one or more transistors formed on the element formation surface of the semiconductor substrate; The at least a portion of the fourth wiring is a gate electrode of at least one of the one or more transistors. Solid-state imaging device. (28) A plurality of pixels each outputting a luminance change of incident light; a detection circuit that outputs an event signal based on the luminance change output from each of the pixels; Equipped with Each of the pixels is a photoelectric conversion element that generates an electric charge according to the amount of incident light; a logarithmic conversion circuit connected to the photoelectric conversion element and configured to convert a photocurrent flowing out from the photoelectric conversion element into a voltage signal corresponding to a logarithmic value of the photocurrent; Equipped with the photoelectric conversion elements included in each of the plurality of pixels are arranged in a matrix on an element formation surface of a semiconductor substrate; The logarithmic conversion circuit includes: a first transistor having a gate connected to the photoelectric conversion element; a second transistor having a source connected to the photoelectric conversion element and a gate connected to the drain of the first transistor; a third transistor having a source connected to the drain of the first transistor and the gate of the second transistor and a gate connected to the drain of the second transistor; a fourth transistor having a source connected to the drain of the second transistor and the gate of the third transistor and a gate connected to the drain of the third transistor; Equipped with a first wiring connected to a gate of the first transistor; a second wiring that connects the gate of the second transistor and the drain of the first transistor; a third wiring that connects the gate of the third transistor and the drain of the second transistor; a fourth wiring that connects the gate of the fourth transistor and the drain of the third transistor; a power supply line disposed in the interlayer insulating film and connected to a power supply voltage, a ground voltage, or a predetermined potential; Further equipped with the first wiring to the fourth wiring are distributed among a plurality of wiring layers in an interlayer insulating film disposed on the element forming surface side of the semiconductor substrate, At least a part of the fourth wiring is disposed at a position closer to the semiconductor substrate than a layer in which the power supply lines are disposed that is closest to the semiconductor substrate. Solid-state imaging device. (29) A solid-state imaging device according to any one of (24) to (28), wherein a coupling capacitance formed between the first wiring to the fourth wiring arranged in a wiring layer closest to the semiconductor substrate side is smaller than a coupling capacitance formed between the wiring arranged in a wiring layer above the wiring layer closest to the semiconductor substrate side. (30) A plurality of pixels each outputting a luminance change of incident light; a detection circuit that outputs an event signal based on the luminance change output from each of the pixels; Equipped with Each of the pixels is a photoelectric conversion element that generates an electric charge according to the amount of incident light; a logarithmic conversion circuit connected to the photoelectric conversion element and configured to convert a photocurrent flowing out from the photoelectric conversion element into a voltage signal corresponding to a logarithmic value of the photocurrent; Equipped with the photoelectric conversion elements included in each of the plurality of pixels are arranged in a matrix on an element formation surface of a semiconductor substrate; The logarithmic conversion circuit includes: a first transistor having a gate connected to the photoelectric conversion element; a second transistor having a source connected to the photoelectric conversion element and a gate connected to the drain of the first transistor; a sense node connected to the gate of the first transistor; Equipped with Each of the pixels is a third transistor having a drain connected to the gate of the first transistor and the source of the second transistor and a source connected to the photoelectric conversion element; a fourth transistor having a source connected to the photoelectric conversion element; a readout circuit connected to a drain of the fourth transistor and configured to generate a pixel signal corresponding to the charge generated in the photoelectric conversion element; Further equipped with a first drive line connected to the gate of the third transistor; a second drive line connected to the gate of the fourth transistor; one or more third drive lines connected to gates of one or more transistors constituting the readout circuit; Further equipped with the first drive line to the third drive line and the sense node are distributed among a plurality of wiring layers in an interlayer insulating film arranged on the element forming surface side of the semiconductor substrate, The first drive line, the second drive line, and the sense node are disposed in different layers among the plurality of wiring layers. Solid-state imaging device. (31) The solid-state imaging device according to (30), further comprising a shield layer disposed between the sense node and the first driving line to the third driving line. (32) The solid-state imaging device described in (31), wherein the shielding layer includes at least one of a power supply line connected to a power supply voltage, a ground voltage, or a predetermined potential, and wiring other than the sense node among wirings constituting the logarithmic conversion circuit. (33) The solid-state imaging device according to any one of (30) to (32), wherein the first driving line, the second driving line, and the third driving line are arranged in an uppermost layer of the plurality of wiring layers. (34) The solid-state imaging device according to any one of (30) to (32), wherein a wiring that connects at least one of the first driving line to the third driving line and the gate extends substantially perpendicular to the element formation surface. (35) The solid-state imaging device according to (2), A control unit that controls the solid-state imaging device; Equipped with The solid-state imaging device has a plurality of operation modes, The control unit controls a potential of the sense node when switching an operation mode of the solid-state imaging device. Imaging device. (36) The imaging device described in (35), wherein the control unit applies the first potential to the sense node and / or the cathode of the photoelectric conversion element via the first transistor when switching the operating mode of the solid-state imaging device. (37) The imaging device according to (35) or (36), wherein the control unit cuts off a current flowing through the logarithmic conversion circuit when switching the operation mode of the solid-state imaging device. [Explanation of symbols]

[0370] 100 Imaging device 110 Optics Department 120 Recording Section 130 Control section 200 Solid-state imaging device 201 Photodetector chip 202, 202A, 1202 Detection Chip 211-213, 231-233 Via placement section 220 Light receiving part 221, 221A, 221C, 221CC, 221D, 821, 821C, 821CC, 821D Shared Block 240 Signal Processing Circuit 251 Row driver circuit 252 column driver circuit 260 Address Event Detector 270 column ADC 280 Line Arbiter 300 detection pixels 301, 301A~301N, 301Y, 801A, 801C, 801D Response circuit 305 Detection Circuit 310, 310A Logarithmic response unit 311 Photoelectric conversion element 312, 313, 315, 316, 347, 512 nMOS transistors 314, 314a, 314b, 345, 346, 411, 511 pMOS transistors 314A, 314B Bias Circuit 314cDAC 314d Bias control transistor 314e constant current source 317 Switching Transistor 318, 319 Control transistor 320 Detection Block 370 Pixel Circuit 370a Readout circuit 372 Transfer transistor 373 Reset Transistor 374 Floating Diffusion Region 375 Amplifying Transistor 376 Select Transistor 330 Buffer 340 Differentiator 341, 343 Capacitor 342 Inverter 344 Switch 360 Transfer Circuit 400 Selection 410, 420 Selector 500 Comparison section 510, 520 Comparator 972, 973 Dummy transistor 1001 Semiconductor substrate 1002 Well Layer 1003 Gate insulating film 1004 Transistor 1010 Interlayer insulating film 1011 Via wiring 1012 Shielded wiring 3101 Common Line LD, TG11~TG42 drive wire M1 1st wiring layer M2 2nd wiring layer M3 3rd wiring layer M4 4th wiring layer N1 Node (N1 Wiring) N2 node (N2 wiring) N3 node (N3 wiring) N4 node (N4 wiring) SN Sense Node VSL vertical signal line

Claims

1. A plurality of pixels each outputting a luminance change of incident light; a detection circuit that outputs an event signal based on the luminance change output from each of the pixels; Equipped with Each of the pixels is a photoelectric conversion element that generates an electric charge according to the amount of incident light; a logarithmic conversion circuit connected to the photoelectric conversion element and configured to convert a photocurrent flowing out from the photoelectric conversion element into a voltage signal corresponding to a logarithmic value of the photocurrent; a first transistor having a drain connected to a sense node of the logarithmic conversion circuit; Equipped Solid-state imaging device.

2. The solid-state imaging device according to claim 1 , wherein the source of the first transistor is connected to a first potential that is equal to or higher than a reference potential and lower than a power supply voltage.

3. Each of the pixels further includes a first circuit that outputs a luminance change of incident light incident on the photoelectric conversion element based on the voltage signal output from the logarithmic conversion circuit; The detection circuit includes a second circuit that outputs the event signal based on the luminance change output from each of the pixels. The solid-state imaging device according to claim 2 .

4. 3. The solid-state imaging device according to claim 2, wherein the reference potential is a negative potential or a ground potential.

5. 3. The solid-state imaging device according to claim 2, wherein the first potential is lower than the potential of the sense node during normal operation of the logarithmic conversion circuit.

6. The logarithmic conversion circuit includes: a second transistor having a gate connected to the photoelectric conversion element; a third transistor having a source connected to the photoelectric conversion element; Equipped with a gate of the third transistor is connected to a drain of the second transistor; The sense node is a wiring connected to the gate of the second transistor. The solid-state imaging device according to claim 2 .

7. The solid-state imaging device according to claim 6 , wherein each of the pixels further comprises a fourth transistor having a drain connected to the gate of the second transistor and the source of the third transistor and a source connected to the photoelectric conversion element.

8. Each of the pixels is a fifth transistor having a source connected to the photoelectric conversion element; a readout circuit connected to a drain of the fifth transistor and configured to generate a pixel signal corresponding to the charge generated in the photoelectric conversion element; The solid-state imaging device according to claim 7 , further comprising:

9. The solid-state imaging device according to claim 8 , wherein the first transistor is connected to the sense node via the fifth transistor and the fourth transistor.

10. The solid-state imaging device according to claim 8 , wherein each of the pixels further comprises a sixth transistor connected to the drain of the fourth transistor and the drain of the fifth transistor.

11. The solid-state imaging device according to claim 10 , wherein the first transistor is connected to the sense node via the sixth transistor.

12. the read circuit includes the first transistor, the source of which is connected to the drain of the fifth transistor and the drain of which is connected to the first potential; The solid-state imaging device according to claim 8 .

13. The solid-state imaging device according to claim 12 , wherein each of the pixels further comprises a sixth transistor connected to the drain of the fourth transistor and the drain of the fifth transistor.

14. The solid-state imaging device according to claim 8 , wherein the first transistor is connected to the sense node via the fourth transistor.

15. Each of the pixels is a fifth transistor having a source connected to the drain of the fourth transistor; a sixth transistor having a drain connected to the drain of the fourth transistor, the source of the third transistor, and the gate of the second transistor, and a source connected to the drain of the fifth transistor; Further equipped with The first transistor is connected to the sense node via the sixth transistor. The solid-state imaging device according to claim 7 .

16. Each of the pixels further includes a readout circuit connected to the drain of the fifth transistor and configured to generate a pixel signal corresponding to the charge generated in the photoelectric conversion element; the read circuit includes the first transistor, the source of which is connected to the drain of the fifth transistor and the drain of which is connected to the first potential; The solid-state imaging device according to claim 15.

17. Each of the pixels further includes a fifth transistor having a source connected to the photoelectric conversion element, A common line commonly connecting the drains of the fifth transistors among the plurality of pixels is further provided. The solid-state imaging device according to claim 1 .

18. 18. The solid-state imaging device according to claim 17, further comprising a readout circuit connected to the common line and generating a pixel signal according to the charge generated in the photoelectric conversion element of each of the pixels.

19. The solid-state imaging device according to claim 17 , wherein the first transistor is connected to the common line and is shared by the plurality of pixels.

20. the photoelectric conversion elements included in each of the plurality of pixels are arranged in a matrix on an element formation surface of a semiconductor substrate; The first transistor is disposed on the element forming surface between the photoelectric conversion elements arranged in the matrix. The solid-state imaging device according to claim 1 .

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