Light emitting element

Abstract

To provide a light emitting element.SOLUTION: A light emitting element includes: a substrate; a light shielding layer; a coating layer; and a plurality of bumps. The light shielding layer is on the substrate. The coating layer is on the light shielding layer. The plurality of bumps are disposed on the substrate, and each organic light emitting unit including an organic light emitting material is provided between two adjacent bumps of the plurality of bumps. An edge of the light shielding layer is not aligned with an edge of one of the plurality of bumps. The organic light emitting unit includes a first light emitting unit and a second light emitting unit. Each of the first light emitting unit and the second light emitting unit includes a stacked organic light emitting layer containing an organic material.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates to light emitting devices, and more particularly to organic light emitting devices. [Background technology]

[0002] Organic light-emitting displays are widely used in the most high-end electronic devices. However, due to the limitations of the prior art, the luminous effect of the luminescent material in the organic electroluminescence display cannot be effectively controlled, and problems such as halation and optical crosstalk easily occur, and the optical effect of the organic electroluminescence display does not meet expectations. In the prior art, a polarizer is added to improve the above problems, but the halation cannot be effectively eliminated, and the addition of the polarizer increases the thickness of the display, which increases the cost. The present disclosure provides an apparatus that can solve the above problems. Summary of the Invention [Means for solving the problem]

[0003] The present invention provides a light-emitting device comprising a substrate, a light-shielding layer, a covering layer and a plurality of bumps. The light-shielding layer is on the substrate. The covering layer is on the light-shielding layer. The plurality of bumps are disposed on the substrate, and an organic light-emitting unit including an organic light-emitting material is provided between two adjacent bumps of the plurality of bumps. An edge of the light-shielding layer is not aligned with an edge of one of the plurality of bumps. The organic light-emitting unit comprises a first light-emitting unit and a second light-emitting unit. The first light-emitting unit and the second light-emitting unit each have a stacked organic light-emitting layer including an organic material.

[0004] In some embodiments, the organic light-emitting material comprises a molecular structure having a resonant structure and may be selected from the group consisting of spiro-triarylamines, bistriarylamines, and combinations thereof.

[0005] In some embodiments, the first light-emitting unit and the second light-emitting unit each have an effective light-emitting area, the size of which is defined by the anode underlying each light-emitting unit, and each light-emitting unit has dark and light areas when it emits light, and the total area of ​​the dark areas is less than 50% of the effective light-emitting area.

[0006] In some embodiments, the light-shielding layer is electrically insulated from a conductive layer provided on the cover layer via the cover layer.

[0007] In some embodiments, the stacked organic light-emitting layer includes a carrier injection layer, a carrier transport layer, an organic emission layer, and an organic carrier transport layer.

[0008] In some embodiments, the plurality of bumps comprises a photosensitive material.

[0009] In some embodiments, the substrate comprises a transparent material.

[0010] The present invention provides a light-emitting device including a substrate, a plurality of light-shielding layers, a covering layer, a conductive layer, and a plurality of bumps. The plurality of light-shielding layers are on the substrate. The covering layer is on the substrate and covers the plurality of light-shielding layers. The conductive layer is on the covering layer. The plurality of bumps are disposed on a portion of the conductive layer, and have an organic light-emitting unit including an organic material between two adjacent bumps of the plurality of bumps. Each of the plurality of bumps has an edge that deviates from an edge of one of the plurality of light-shielding layers in a vertical direction.

[0011] In some embodiments, the area of ​​the light-shielding layer in the lateral direction is larger than the area of ​​each of the plurality of bumps.

[0012] In some embodiments, the conductive layer comprises a transparent conductive film comprising ITO (indium tin oxide), IZO (indium zinc oxide), or IGZO (indium gallium zinc oxide).

[0013] In some embodiments, the conductive layer comprises an anode electrode.

[0014] In some embodiments, the distance between edges of the two adjacent bumps of the organic light-emitting unit is greater than the distance between two light-shielding layers in the plurality of light-shielding layers.

[0015] In some embodiments, the coating layer is formed on the plurality of light-shielding layers by any one of chemical vapor deposition (CVD), physical vapor deposition (PVD), and spin-on-glass (SOG spin coating). [Brief description of the drawings]

[0016] [Figure 1] FIG. 13 is a top view showing an intermediate product of a light-emitting element. [Diagram 2] FIG. 2 is a cross-sectional view taken along line AA in FIG. [Figure 3A] 1A to 1C are schematic diagrams illustrating a flow of manufacturing a light-emitting device according to an embodiment. [Figure 3B] 1A to 1C are schematic diagrams illustrating a flow of manufacturing a light-emitting device according to an embodiment. [Figure 3C] 1A to 1C are schematic diagrams illustrating a flow of manufacturing a light-emitting device according to an embodiment. [Figure 3D] 1A to 1C are schematic diagrams illustrating a flow of manufacturing a light-emitting device according to an embodiment. [Figure 3E] 1A to 1C are schematic diagrams illustrating a flow of manufacturing a light-emitting device according to an embodiment. [Figure 3F] 1A to 1C are schematic diagrams illustrating a flow of manufacturing a light-emitting device according to an embodiment. [Figure 3G] 1A to 1C are schematic diagrams illustrating a flow of manufacturing a light-emitting device according to an embodiment. [Figure 3H] 1A to 1C are schematic diagrams illustrating a flow of manufacturing a light-emitting device according to an embodiment. [Figure 3I] 1A to 1C are schematic diagrams illustrating a flow of manufacturing a light-emitting device according to an embodiment. [Figure 3J] 1A to 1C are schematic diagrams illustrating a flow of manufacturing a light-emitting device according to an embodiment. [Figure 3K]1A to 1C are schematic diagrams illustrating a flow of manufacturing a light-emitting device according to an embodiment. [Figure 4A] FIG. 2 is a top view illustrating a light-shielding layer according to an embodiment. [Figure 4B] FIG. 2 is a top view illustrating a light-shielding layer according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0017] 1 is a top view showing an intermediate product of a light-emitting element 10. The light-emitting element 10 comprises a light-emitting layer 20 and a cover layer 40 located on the light-emitting layer 20. A spacer 21 can be designed to provide an array of recesses for accommodating an array of light-emitting pixels for the light-emitting layer 20. In some embodiments, the spacer 21 can include a photosensitive material.

[0018] FIG. 2 is a cross-sectional view along line AA in FIG. 1, showing only the light-emitting region. For simplicity, the covering layer 40 is omitted here. The spacer 21 has a number of bumps 105 to define the light-emitting pixel pattern. A recess is between two adjacent bumps 105 to provide a space to accommodate the light-emitting pixel. Those skilled in the art should understand that, although the bumps 105 are shown separated when viewed from the cross-sectional view, they may be connected to each other through other parts of the spacer 21 when viewed from the top view of FIG. 1.

[0019] The light-emitting element 10 comprises a light-emitting array including a first organic light-emitting unit 10a, a second organic light-emitting unit 10b, and a third organic light-emitting unit 10c. The organic light-emitting units may also be referred to as light-emitting pixels in this application. In some embodiments, the light-emitting unit 10a comprises a first electrode 104, a carrier injection layer 106L1 on the bump 105 and the first electrode 104, a carrier transport layer 106L2 on the carrier injection layer 106L1, an organic launch layer 106L3 on a portion of the carrier transport layer 106L2, and an organic carrier transport layer 106L4 on the organic launch layer 106L3. The carrier injection layer 106L1, the carrier transport layer 106L2, the organic launch layer 106L3, and the organic carrier transport layer 106L4 may be collectively referred to as a stacked organic light-emitting layer.

[0020] In some embodiments, the carrier injection layer 106L1 is disposed between the first electrode 104 and the carrier transport layer 106L2. The light-emitting unit 10a includes an organic material, which can be disposed in any of the carrier transport layers, the carrier injection layers, or the organic emission layers in the light-emitting unit 10a according to different embodiments. In some embodiments, the organic material has an absorptivity of 50% or more at a specific wavelength, in some embodiments, an absorptivity of 60% or more at a specific wavelength, in some embodiments, an absorptivity of 70% or more at a specific wavelength, in some embodiments, an absorptivity of 80% or more at a specific wavelength, in some embodiments, an absorptivity of 90% or more at a specific wavelength, and in some embodiments, an absorptivity of 95% or more at a specific wavelength.

[0021] In some embodiments, the particular wavelength is less than 400 nm, in some embodiments, the particular wavelength is less than 350 nm, in some embodiments, the particular wavelength is 300 nm, in some embodiments, the particular wavelength is less than 250 nm, in some embodiments, the particular wavelength is less than 200 nm, in some embodiments, the particular wavelength is less than 150 nm, and in some embodiments, the particular wavelength is 100 nm.

[0022] The substrate 100 is located below the light-emitting layer 20. In some embodiments, the substrate 100 may comprise a thin film transistor (TFT) array. In some embodiments, the substrate 100 may comprise a substrate (not shown), a dielectric layer (not shown), and one or more circuits (not shown) disposed on or within the substrate. In some embodiments, the substrate is a transparent substrate or is at least partially transparent. In some embodiments, the substrate is a non-flexible substrate, and the substrate material may include glass, quartz, low temperature poly-silicon (LTPS), or other suitable materials. In some embodiments, the substrate is a flexible substrate, and the substrate material may include transparent epoxy resin, polyimide, polyvinyl chloride, methyl methacrylate, or other suitable materials. A dielectric layer may be provided on the substrate as needed. In some embodiments, the dielectric layer may include silicon oxide, silicon nitride, silicon oxynitride, or other suitable materials.

[0023] In some embodiments, the circuit may include a complementary metal-oxide-semiconductor (CMOS) circuit, or a plurality of transistors and a plurality of capacitors proximate to the transistors, where the transistors and capacitors are formed in a dielectric layer. In some embodiments, the transistors are thin-film transistors (TFTs). Each transistor comprises a source / drain region (including at least one source region and drain region), a channel region interposed between the source / drain regions, a gate electrode disposed over the channel region, and a gate insulator interposed between the channel region and the gate electrode. The channel region of the transistor may be made of a semiconductor material, such as silicon or other elements selected from group IV elements or group III and V elements.

[0024] The multiple light blocking layers 101 are formed on the substrate 100. The multiple light blocking layers 101 are in contact with the substrate 100. The multiple light blocking layers 101 are spaced apart from each other by a distance W1. The multiple light blocking layers 101 can absorb 90% or more of visible light. In some embodiments, the light blocking layer 101 can include a black body material. In some embodiments, the light blocking layer 101 includes one layer of a single material. In some embodiments, the light blocking layer 101 includes a composite layer formed from multiple materials. In some embodiments, the light blocking layer 101 includes an organic material. In some embodiments, the light blocking layer 101 includes an inorganic material.

[0025] The covering layer 102 is formed on the substrate 100 and covers the multiple light-shielding layers 101. The covering layer 102 is formed in the gaps between the multiple light-shielding layers 101. The covering layer 102 covers the top surface and both side surfaces of the light-shielding layers 101.

[0026] A plurality of first electrodes 104 are formed on the covering layer 102. The plurality of first electrodes 104 are separated from each other. The plurality of first electrodes 104 are in contact with the covering layer 102. The plurality of first electrodes 104 are electrically connected to the substrate 100.

[0027] As shown in FIG. 2, a plurality of bumps 105 are formed on a portion of the top surface of the first electrode 104. The surrounding area of ​​the first electrode 104 is covered with the bumps 105. In some embodiments, the edge corners of the first electrode 104 are completely surrounded by the bumps 105. In some embodiments, the side walls of the first electrode 104 are completely in contact with the bumps 105. In some embodiments, the two bumps 105 in the gap between the two first electrodes 104 are separated from each other. The light shielding layer 101 is electrically insulated from the first electrode 104 provided on the covering layer 102 via the covering layer 102.

[0028] In this application, the first electrode 104 can be an anode. The first electrode 104 of the light-emitting unit 10a can define the size of the effective light-emitting area. In some embodiments, the light-emitting unit 10a has dark areas and light areas when it is emitting light. The total area of ​​the dark areas is less than 50% of the effective light-emitting area. The effective light-emitting area can also be called the effective illumination area.

[0029] In some embodiments, the effective illumination area has a width of at least less than 10 microns. In some embodiments, the effective illumination area has a width of about 3 microns to 6 microns. In some embodiments, the effective illumination area has a width of about 4 microns to 6 microns. The effective illumination area determines the pixel size of the light emitting element 10 in FIG. 1. Because the size of the effective illumination area can be controlled to 10 microns or less, the pixel density of the light emitting element 10 can exceed 1000 or 2000 ppi.

[0030] 2, light shielding layer 101 has a thickness 101T. First electrode 104 has a thickness 104T. In some embodiments, thickness 101T of light shielding layer 101 is greater than thickness 104T of first electrode 104. In some embodiments, thickness 101T of light shielding layer 101 is equal to thickness 104T of first electrode 104. In some embodiments, thickness 101T of light shielding layer 101 is less than thickness 104T of first electrode 104.

[0031] The first electrode 104 may have a total thickness of about 1500 Å to 2700 Å. In some embodiments, the first electrode 104 has a total thickness of about 1800 Å to 2200 Å. In some embodiments, the first electrode 104 has a total thickness of about 2000 Å. The first electrode 104 may be a conductive layer. The first electrode 104 may include ITO, IZO, IGZO, AlCu alloy, AgMo alloy, ITO (or IZO or IGZO) of about 50 Å to 500 Å, metal film (Ag, Al, Mg, Au) of about 500 Å to 2000 Å, and ITO (or IZO or IGZO) of about 50 Å to 1000 Å.

[0032] In some embodiments, the electrode 104 is a composite structure. For example, the electrode 104 has a conductive film and a transparent conductive film thereon. The conductive film is located between the transparent conductive film and the substrate 100. In some embodiments, the conductive film includes aluminum, gold, silver, copper, etc. In some embodiments, the transparent conductive film includes inclusions of indium, tin, graphene, zinc, oxygen, etc. In some embodiments, the electrode 104 includes a transparent conductive thin film. In some embodiments, the electrode 104 includes ITO (indium tin oxide). In some embodiments, the electrode 104 includes IZO (indium zinc oxide). In some embodiments, the electrode 104 includes IGZO (indium gallium zinc oxide). In some embodiments, the transparent conductive film has a roughness Ra<10 Å. The thickness of the conductive film can be between about 1500 Å and 3000 Å. The thickness of the transparent conductive film can be between about 80 Å and 1000 Å.

[0033] In some embodiments, the first electrode 104 has at least three different films. A conductive film (e.g., Al, Cu, Ag, Au, etc.) is sandwiched between two transparent conductive films. In some cases, one of the two transparent conductive films is ITO, with one side in contact with the substrate 100 and the other side in contact with a conductive film. In some cases, one of the two transparent conductive films is ITO, with one side in contact with a conductive film and the other side in contact with the bump 105 or the luminescent material.

[0034] In some embodiments, each bump 105 has a curved surface that protrudes away from the substrate 100 and covers the outer peripheral region of the first electrode 104. The bumps 105 may have different shapes. In some embodiments, the bumps 105 have a curved surface. In some embodiments, the shape of the bumps 105 is a trapezoid. In some embodiments, the shape of the bumps 105 is a rectangle. The pattern of the bumps 105 is designed based on the pixel arrangement, and the patterned bumps 105 are also called pixel defined layers (PDLs). The bumps 105 are disposed on the substrate 100. Each bump 105 fills the gap between two adjacent first electrodes 104. Each first electrode 104 is partially covered by the bumps 105. The bumps 105 may include a photosensitive material. In FIG. 2, the area of ​​each of the multiple light-shielding layers 101 in the lateral direction is larger than the area of ​​each of the bumps 105.

[0035] One of the bumps 105 has an edge 105a on its upper surface covering the first electrode 104. The light-shielding layer 101 has an edge 101a near the center of the first electrode 104. The edge 101a of the light-shielding layer 101 is not aligned with the edge 105a of the bump 105. A deviation d occurs in the vertical direction between the edge 105a of the bump 105 and the edge 101a of the light-shielding layer. The proportion of the deviation d in the width of the light-shielding layer 101 may be 10% or more. The proportion of the deviation d in the width of the light-shielding layer 101 may be 20% or more. The proportion of the deviation d in the width of the light-shielding layer 101 may be 30% or more. The proportion of the deviation d in the width of the light-shielding layer 101 may be 40% or more.

[0036] One of the bumps 105' has an edge 105'a on its upper surface covering the first electrode 104. The light shielding layer 101' has an edge 101'a near the center of the first electrode 104. A deviation d' occurs between the edge 105'a of the bump 105' and the edge 101'a of the light shielding layer. The ratio of the deviation d' to the width of the light shielding layer 101' may be 10% or more. The ratio of the deviation d' to the width of the light shielding layer 101' may be 20% or more. The ratio of the deviation d' to the width of the light shielding layer 101' may be 30% or more. The ratio of the deviation d' to the width of the light shielding layer 101' may be 40% or more. In some embodiments, the deviation d is equal to the deviation d'. In some embodiments, the deviation d is greater than the deviation d'. In some embodiments, the deviation d is smaller than the deviation d'.

[0037] In FIG. 2, the distance between the multiple light-shielding layers 101 and 101' is W1, and the distance between the edges 105a and 105'a of the two adjacent bumps 105 and 105' is W2. Due to the deviations d and d', the distance W2 between the edges 105a and 105'a of the two adjacent bumps 105 and 105' is greater than the distance W1 between the multiple light-shielding layers 101 and 101'. In FIG. 2, the distance W2 between the edges 105a and 105'a of the two adjacent bumps 105 and 105' can be the sum of the distance W1 between two of the multiple light-shielding layers 101 101 and 101' and the deviations d and d'. The distance W2 between the edges 105a and 105'a of the two adjacent bumps 105 and 105' defines the area of ​​the effective light-emitting region. Because the distance W1 between the plurality of light-shielding layers 101 and 101' is smaller than W2, the plurality of light-shielding layers 101 and 101' can control the light emitted from the first electrode 104, thereby improving the imaging effect of the pattern.

[0038] In addition, the light-shielding layer 101 can block the ambient light traveling upward from the substrate 100, and therefore can reduce optical crosstalk between the ambient light and the light emitted from the light-emitting unit 10a. In other words, the light-shielding layer 101 can absorb 90% or more of the ambient light traveling upward from the substrate 100, and therefore can reduce optical crosstalk between the ambient light and the light emitted from the light-emitting unit 10a.

[0039] In some embodiments, the absorptivity of the bump 105 for a particular wavelength is 50% or greater, in some embodiments, the absorptivity of the bump 105 for a particular wavelength is 60% or greater, in some embodiments, the absorptivity of the bump 105 for a particular wavelength is 70% or greater, in some embodiments, the absorptivity of the bump 105 for a particular wavelength is 80% or greater, in some embodiments, the absorptivity of the bump 105 for a particular wavelength is 90% or greater, in some embodiments, the absorptivity of the bump 105 for a particular wavelength is 95% or greater. In some embodiments, the particular wavelength is less than 400 nm, in some embodiments, the particular wavelength is less than 350 nm, in some embodiments, the particular wavelength is less than 300 nm, in some embodiments, the particular wavelength is less than 250 nm, in some embodiments, the particular wavelength is less than 200 nm, in some embodiments, the particular wavelength is less than 150 nm, and in some embodiments, the particular wavelength is less than 100 nm.

[0040] The carrier injection layer 106L1 is provided on the exposed surfaces of the covering layer 102, the bump 105, and the first electrode 104. The carrier injection layer 106L1 continuously covers the exposed surfaces of the bump 105 and the first electrode 104. In some embodiments, the exposed surface of each first electrode 104 is configured to be used for an effective light-emitting area of ​​one light-emitting unit 10a. Optionally, the carrier injection layer 106L1 contacts the bump 105. In some embodiments, the carrier injection layer 106L1 contacts the first electrode 104. In some embodiments, the carrier injection layer 106L1 is organic. In some embodiments, the carrier injection layer 106L1 is configured to perform hole injection. In some embodiments, the carrier injection layer 106L1 is a hole injection layer. In some embodiments, the carrier injection layer 106L1 may have a thickness of about 80 Å to 500 Å.

[0041] The carrier transport layer 106L2 is provided on the exposed surfaces of the covering layer 102, the bumps 105, and the first electrodes 104. The carrier transport layer 106L2 is provided on the carrier injection layer 106L1 and completely covers the carrier injection layer 106L1. The carrier injection layer 106L1 is provided below the carrier transport layer 106L2. The carrier transport layer 106L2 continuously covers the carrier injection layer 106L1. The carrier transport layer 106L2 covers the plurality of bumps 105 and the plurality of first electrodes 104. Optionally, the carrier transport layer 106L2 is in contact with the carrier injection layer 106L1. In some embodiments, the carrier transport layer 106L2 is an organic material. In some embodiments, the carrier transport layer 106L2 is configured to perform hole transport. In some embodiments, the carrier transport layer 106L2 is a first hole transport layer. In some embodiments, carrier injection layer 106L1 has a thickness of about 80 Å to 500 Å.

[0042] The organic emission layer 106L3 is disposed on the exposed surfaces of the cover layer 102, the bumps 105, and the first electrodes 104. The organic emission layer 106L3 is disposed on the carrier transport layer 106L2 and completely covers the carrier transport layer 106L2. The carrier transport layer 106L2 is disposed below the organic emission layer 106L3. The organic emission layer 106L3 continuously covers the carrier transport layer 106L2. The organic emission layer 106L3 covers the plurality of bumps 105 and the plurality of first electrodes 104. Optionally, the organic emission layer 106L3 is in contact with the carrier transport layer 106L2. The organic emission layer 106L3 is configured to emit a first color.

[0043] In some embodiments, the absorptivity of the organic emission layer 106L3 for a particular wavelength is 50% or more, in some embodiments, the absorptivity of the organic emission layer 106L3 for a particular wavelength is 60% or more, in some embodiments, the absorptivity of the organic emission layer 106L3 for a particular wavelength is 70% or more, in some embodiments, the absorptivity of the organic emission layer 106L3 for a particular wavelength is 80% or more, in some embodiments, the absorptivity of the organic emission layer 106L3 for a particular wavelength is 90% or more, in some embodiments, the absorptivity of the organic emission layer 106L3 for a particular wavelength is 95% or more, in some embodiments, the particular wavelength is less than 400 nm, in some embodiments, the particular wavelength is less than 350 nm, in some embodiments, the particular wavelength is less than 300 nm, in some embodiments, the particular wavelength is less than 250 nm, in some embodiments, the particular wavelength is less than 200 nm, in some embodiments, the particular wavelength is less than 150 nm, and in some embodiments, the particular wavelength is less than 100 nm.

[0044] In some embodiments, at least one of the carrier transport layer 106L2 and the organic emission layer 106L3 includes an organic material. The organic material may include a molecular structure having a resonant structure. The organic material may be selected from the group consisting of spiro-triarylamines, bistriarylamines, and combinations thereof. In some embodiments, at least one of the carrier transport layer 106L2 and the organic emission layer 106L3 includes spiro-triarylamines. In some embodiments, at least one of the carrier transport layer 106L2 and the organic emission layer 106L3 includes bistriarylamines. In some embodiments, the carrier transport layer 106L2 and the organic emission layer 106L3 include the same material. In some embodiments, the carrier transport layer 106L2 includes [ka] The organic launch layer 106L3 includes [ka] In some embodiments, the carrier transport layer 106L2 comprises: [ka] The organic launch layer 106L3 includes [ka] Includes.

[0045] The organic carrier transport layer 106L4 is disposed on the exposed surfaces of the cover layer 102, the bumps 105, and the first electrodes 104. The organic carrier transport layer 106L4 is disposed on the organic ejection layer 106L3 and completely covers the organic ejection layer 106L3. The organic ejection layer 106L3 is disposed below the organic carrier transport layer 106L4. The organic carrier transport layer 106L4 continuously covers the organic ejection layer 106L3. The organic carrier transport layer 106L4 covers the plurality of bumps 105 and the plurality of first electrodes 104. Optionally, the organic carrier transport layer 106L4 is in contact with the organic ejection layer 106L3.

[0046] The second electrode 106D is provided on the exposed surface of the covering layer 102, the bump 105, and the first electrode 104. The second electrode 106D is located on the organic carrier transport layer 106L4 and completely covers the organic carrier transport layer 106L4. In some cases, the second electrode 106D is patterned to cover only the effective light-emitting area of ​​each light-emitting pixel. In some cases, the second electrode 106D contacts the organic carrier transport layer 106L4.

[0047] The second electrode 106D may have a thickness of about 80 Å to 500 Å. In some embodiments, the second electrode 106D may have a thickness of about 80 Å to 150 Å. In some embodiments, the second electrode 106D may have a thickness of about 150 Å to 200 Å. In some embodiments, the second electrode 106D may have a thickness of about 200 Å to 300 Å. In some embodiments, the second electrode 106D may have a thickness of about 300 Å to 400 Å. In some embodiments, the second electrode 106D may have a thickness of 400 Å to 500 Å.

[0048] In the present application, the second electrode 106D may be a cathode. The second electrode 106D may be a metal material, such as Ag, Mg, etc. In some embodiments, the second electrode 106D includes ITO (indium tin oxide) or IZO (indium zinc oxide).

[0049] In some embodiments, the second electrode 106D is a composite structure. For example, the second electrode 106D has a conductive film and a transparent conductive film thereon. The conductive film is located between the transparent conductive film and the organic carrier transport layer 106L4. In some embodiments, the conductive film includes aluminum, gold, silver, copper, magnesium, molybdenum, etc. In some embodiments, the transparent conductive film includes indium, tin, graphene, zinc, oxygen, etc. In some embodiments, the transparent conductive film is ITO (indium tin oxide). In some embodiments, the transparent conductive film is IZO (indium zinc oxide). In some embodiments, the transparent conductive film is located between the conductive film and the organic carrier transport layer 106L4.

[0050] In FIG. 2, the light-emitting device 10 includes a substrate 100 , a plurality of bumps 105 on the substrate 100 , and a plurality of light-emitting units separated by the bumps 105 .

[0051] These light-emitting units include a first light-emitting unit 10a, a second light-emitting unit 10b, and a third light-emitting unit 10c. In some embodiments, the first light-emitting unit 10a, the second light-emitting unit 10b, and the third light-emitting unit 10c are adjacent to each other. In some embodiments, the second light-emitting unit 10b and the third light-emitting unit 10c have a similar structure to the first light-emitting unit 10a. Although the first light-emitting unit 10a, the second light-emitting unit 10b, and the third light-emitting unit 10c are illustrated as having similar characteristics, this is for illustrative purposes only and is not intended to limit these embodiments. The first light-emitting unit 10a, the second light-emitting unit 10b, and the third light-emitting unit 10c can have similar structures or different structures to meet desired functional requirements.

[0052] The first light-emitting unit 10a, the second light-emitting unit 10b, and the third light-emitting unit 10c may differ from each other at least in the thickness of the stacked organic light-emitting layer. In some embodiments, the first light-emitting unit 10a emits green light, the second light-emitting unit 10b emits red light, and the third light-emitting unit 10c emits blue light.

[0053] In some embodiments, the light-emitting units 10a, 10b, 10c are configured to be divided into at least three different groups, each group emitting a different color from the other groups. The thickness of each stacked organic light-emitting layer may be related to the color displayed by the corresponding light-emitting unit 10a, 10b, 10c. In some embodiments, compared to other light-emitting units configured to emit different colors, the first light-emitting unit 10a emits green light, and the stacked organic light-emitting layer of the first light-emitting unit 10a may have the smallest thickness. In some embodiments, compared to other light-emitting units configured to emit different colors, the second light-emitting unit 10b emits red light, and the thickness of the stacked organic light-emitting layer in the second light-emitting unit 10b is between the thickness of the stacked organic light-emitting layer in the first light-emitting unit 10a and the thickness of the stacked organic light-emitting layer in the third light-emitting unit 10c. In some embodiments, compared to other light-emitting units configured to emit different colors, the third light-emitting unit 10c emits blue light, and the stacked organic light-emitting layer of the third light-emitting unit 10c may have the largest thickness. The stacked organic light-emitting layers of the first light-emitting unit 10a, the second light-emitting unit 10b and the third light-emitting unit 10c can be formed via various processes, such as vapor deposition, liquid jetting or inkjet printing.

[0054] In some embodiments, the first, second, and third light-emitting units 10a, 10b, 10c can differ from one another at least in the difference in thickness of the carrier transport layers of the first, second, and third light-emitting units 10a, 10b, 10c.

[0055] In some embodiments, the light-emitting units 10a, 10b, 10c are configured to be divided into at least three different groups, each group emitting a different color from the other groups. The thickness of the carrier transport layer may be related to the color displayed by the corresponding light-emitting unit 10a. In some embodiments, the first light-emitting unit 10a emits green light, and the carrier transport layer of the first light-emitting unit 10a may have a minimum thickness, compared to other light-emitting units configured to emit different colors. In some embodiments, the second light-emitting unit 10b emits red light, and the thickness of the carrier transport layer in the second light-emitting unit 10b is between the thickness of the carrier transport layer in the first light-emitting unit 10a and the thickness of the carrier transport layer in the third light-emitting unit 10c, compared to other light-emitting units configured to emit different colors. In some embodiments, the third light-emitting unit 10c emits blue light, and the carrier transport layer of the third light-emitting unit 10c may have a maximum thickness, compared to other light-emitting units configured to emit different colors.

[0056] 3A to 3K illustrate a method for manufacturing a light-emitting device according to an embodiment.

[0057] In FIG. 3A, a substrate 100 is provided.

[0058] 3B, a substrate 100 is provided with a plurality of light-shielding layers 101. Each light-shielding layer 101 is disposed on the same side of the substrate. Each light-shielding layer 101 is separated from each other.

[0059] 3C, each light-shielding layer 101 is provided with a covering layer 102. The covering layer 102 surrounds the top surface and two side surfaces of each of the multiple light-shielding layers 101. The covering layer 102 is in contact with the substrate 100. The covering layer 102 is formed on the multiple light-shielding layers 101 by any of chemical vapor deposition (CVD), physical vapor deposition (PVD) and spin-on glass (SOG spin coating).

[0060] 3D, a plurality of first electrodes 104 are provided on the covering layer 102. Each of the first electrodes 104 is arranged so as to be electrically connected to the substrate 100. The array pattern of the first electrodes 104 is designed taking into consideration the arrangement of pixels.

[0061] In FIG. 3E, a photosensitive layer 105L is provided on the first electrode 104. In some embodiments, the photosensitive layer 105L is coated on the first electrode 104 and the cover layer 102. The photosensitive layer 105L fills the gap between adjacent first electrodes 104. The photosensitive layer 105L is heated to a predetermined temperature and then exposed to a specified wavelength. The photosensitive layer 105L can absorb more than 90% of visible light. After exposure, the photosensitive layer 105L is developed by immersing it in a solution.

[0062] 3F, a portion of the photosensitive layer 105L is removed, with the remaining portion partially covering the gaps between adjacent first electrodes 104. In this cross-sectional view, the remaining photosensitive layer 105L forms a plurality of bumps 105, with each bump 105 formed on a portion of the top surface of a first electrode 104 and covering one side of the first electrode 104. The bumps 105 partially cover each first electrode 104.

[0063] The bump 105 may be formed in different shapes. In FIG. 3F, the bump 105 has a curved surface. In some embodiments, the shape of the bump 105 is a trapezoid. After forming the bump 105, a cleaning operation may be performed to clean the exposed surface of the bump 105 and the first electrode 104. In one embodiment, during the cleaning operation, deionized water is heated to a temperature between 30° C. and 80° C. After the temperature of the deionized water is increased to a predetermined temperature, the deionized water is directed to the exposed surface of the bump 105 and the first electrode 104.

[0064] In some embodiments, ultrasound is used during the cleaning operation. Ultrasound is introduced into the cleaning agent (such as water or isopropyl alcohol (IPA)). In some embodiments, carbon dioxide is introduced into the cleaning agent. After the cleaning operation, the cleaning agent is removed from the exposed surfaces by a heating operation. During the heating operation, the substrate 100 and bumps 105 may be heated to a temperature between 80° C. and 110° C. In some embodiments, compressed air is directed at the exposed surfaces to help remove residual cleaning agent while heating.

[0065] After the heating operation, the exposed surface can be treated with an O2, N2, or Ar plasma. The plasma is used to roughen the exposed surface. In some embodiments, ozone is used to condition the surface of the exposed surface.

[0066] As shown in FIG. 3G, the bumps 105, a portion of the exposed surface of the covering layer 102, and the exposed surface of the first electrode 104 are provided with a carrier injection layer 106L1. The carrier injection layer 106L1 is continuously lining along the exposed surface. More specifically, the exposed surface of each first electrode 104 is configured as an effective light-emitting area of ​​a light-emitting unit (i.e., pixel). In this embodiment, all the light-emitting units use the carrier injection layer 106L1. In some embodiments, the carrier injection layer 106L1 is used for hole injection. In some embodiments, the carrier injection layer 106L1 is used for electron injection. The carrier injection layer 106L1 continuously covers the exposed surfaces of the bumps 105 and the first electrode 104. Optionally, the carrier injection layer 106L1 contacts the bumps 105. In one embodiment, the carrier injection layer 106L1 contacts the first electrode 104. In some embodiments, the carrier injection layer 106L1 is organic.

[0067] As shown in FIG. 3H, a carrier transport layer 106L2 is provided on the bumps 105, a portion of the exposed surface of the covering layer 102, and the exposed surface of the first electrode 104. The carrier injection layer 106L1 is provided under the carrier transport layer 106L2. The carrier transport layer 106L2 is continuously lined along the carrier injection layer 106L1. In this embodiment, all the light-emitting units use the carrier transport layer 106L2. In some embodiments, the carrier transport layer 106L2 is used for hole injection. In some embodiments, the carrier transport layer 106L2 is used for electron injection. The carrier transport layer 106L2 is continuously covered on the bumps 105 and the first electrode 104. Optionally, the carrier transport layer 106L2 contacts the carrier injection layer 106L1. In some embodiments, the carrier transport layer 106L2 is organic.

[0068] In FIG. 3I, organic emission layer 106L3 is disposed on bump 105, a portion of the exposed surface of cover layer 102, and the exposed surface of first electrode 104. Organic emission layer 106L3 covers carrier transport layer 106L2. Organic emission layer 106L3 completely covers the exposed carrier transport layer 106L2. Organic emission layer 106L3 is configured to emit a first color.

[0069] As shown in Figure 3J, the organic emission layer 106L3 is provided with an organic carrier transport layer 106L4. The organic carrier transport layer 106L4 can be a hole or electron transport layer. In some embodiments, the organic carrier transport layer 106L4 and the carrier transport layer 106L2 are configured with opposite valence states.

[0070] 3K, a second electrode 106D is provided on the organic carrier transport layer 106L4. The second electrode 106D covers the organic carrier transport layer 106L4.

[0071] The second electrode 106D can be a metal material, such as Ag, Mg, etc. In some embodiments, the second electrode 106D includes ITO (indium tin oxide) or IZO (indium zinc oxide). In some embodiments, each light-emitting unit (i.e., pixel) in a cross-sectional view has an independent second electrode 106D.

[0072] The operations shown in FIGS. 3A to 3K can be repeated to form light-emitting units of different colors.

[0073] As shown in FIG. 3K, the light L1 generated by the light-emitting unit can be emitted outward toward the substrate, and the external light L2 has a component traveling toward the light-emitting unit. After the external light L2 enters the light-emitting unit, different reflected light L2r is generated by various components in the light-emitting unit. The reflected light L2r interferes with the light L1 generated by the light-emitting unit, causing problems such as halation and optical crosstalk, and the optical effect of the organic EL display is not as expected. According to the light-shielding layer 101 of the present disclosure, through an appropriate configuration (for example, using one that can block ambient light as described above), the interference of the reflected light L2r with the external light L2 and the light L1 can be greatly reduced, thereby solving problems such as halation and optical crosstalk, and improving the contrast of the light-emitting unit.

[0074] 4A, in some embodiments, the light-shielding layer 101 may have a recess 400 (which may correspond to the W1 portion shown in FIG. 2) having a cross-shaped outline when viewed from a top angle. The cross-shaped outline 400 may transmit light emitted from a light-emitting unit (e.g., 10a, 10b, or 10c). In some embodiments, the cross-shaped outline 400 may transmit light emitted from a single light-emitting unit. In some embodiments, the cross-shaped outline 400 may transmit light emitted from multiple light-emitting units.

[0075] Referring to FIG. 4B, in some embodiments, the light-shielding layer 101 includes a first recess 402 and second recesses 404, 406, 408, 410. The first recess 402 has a cross-shaped outline, and the second recesses 404, 406, 408, 410 are located at the four corners of the first recess 402 and have an L-shaped outline, so that the first recess 402 and the second recesses 404, 406, 408, 410 together form a reticle pattern. The reticle pattern can transmit light emitted from a light-emitting unit (e.g., 10a, 10b, or 10c). In some embodiments, the first recess 402 overlaps with the effective light-emitting area of ​​a single light-emitting unit and can transmit light emitted from the single light-emitting unit. In some embodiments, the first recess 402 overlaps with the effective light-emitting area of ​​multiple light-emitting units and can transmit light emitted from multiple light-emitting units. In some embodiments, each of the second recesses 404, 406, 408, 410 overlaps with an effective light-emitting area of ​​a single light-emitting unit and each can transmit light emitted from the single light-emitting unit. In some embodiments, each of the second recesses 404, 406, 408, 410 overlaps with an effective light-emitting area of ​​multiple light-emitting units and each can transmit light emitted from multiple light-emitting units.

[0076] In some embodiments, the first recess 402 and the second recess 404, 406, 408, 410 overlap the effective light-emitting area of ​​a single light-emitting unit and can transmit light emitted from the single light-emitting unit. In some embodiments, the first recess 402 and the second recess 404, 406, 408, 410 overlap the effective light-emitting area of ​​multiple light-emitting units and can transmit light emitted from multiple light-emitting units.

[0077] The present application can be patterned and adjusted into desired shapes according to actual needs.

[0078] The above summary has outlined the features of some embodiments so that those skilled in the art may better understand each aspect of the present disclosure. It will be apparent to those skilled in the art that other manufacturing processes and structures can be easily designed or adapted based on the present disclosure to achieve the same purpose and / or achieve the same advantages as the embodiments described in this application. Those skilled in the art should also understand that this equivalent structure does not depart from the spirit and scope of the present disclosure, and that numerous changes, substitutions and replacements can be made, but still fall within the spirit and scope of the present disclosure. [Explanation of symbols]

[0079] 100 Substrates 10 Light emitting element 10a Light emitting unit 10b Light Emitting Unit 10c Light Emitting Unit 101 Light blocking layer 101' Shade layer 101a Edge 101'a Edge 101T Thickness 102 Covering layer 104 1st electrode 104T Thickness 105 Bump 105' Bump 105a Edge 105'a Edge 106L1 Carrier injection layer 106L2 Carrier transport layer 106L3 Organic Launch Layer 106L4 Organic carrier transport layer 106D Second electrode d Deviation d' deviation W1 distance W2 Distance

Claims

1. A substrate; a light-shielding layer overlying the substrate; a coating layer on the light-shielding layer; a plurality of bumps disposed on the substrate, each of the bumps being provided with an organic light-emitting unit including an organic light-emitting material between two adjacent bumps, and an edge of one of the bumps is not aligned with an edge of the light-shielding layer; A light emitting device comprising: The organic light-emitting unit includes a first light-emitting unit and a second light-emitting unit, the first light-emitting unit and the second light-emitting unit each having a stacked organic light-emitting layer containing an organic material, and the light-shielding layer is electrically insulated from a conductive layer provided on the covering layer.

2. 10. The light-emitting device of claim 1, wherein the organic light-emitting material comprises a molecular structure having a resonance structure and may be selected from the group consisting of spiro-triarylamines, bistriarylamines, and combinations thereof.

3. 2 . The light-emitting device of claim 1 , wherein the first light-emitting unit and the second light-emitting unit each have an effective light-emitting area, the width of the effective light-emitting area being defined by an anode underlying each of the first light-emitting unit and the second light-emitting unit.

4. The light-emitting element according to claim 1 , wherein the light-shielding layer is electrically insulated by the covering layer from a conductive layer provided on the covering layer.

5. The stacked organic light-emitting layer is A carrier injection layer; A carrier transport layer; an organic launch layer; Organic carrier transport layer The light-emitting device of claim 1 , comprising:

6. The light emitting device according to claim 1 , wherein the plurality of bumps include a photosensitive material.

7. The light emitting device of claim 1 , wherein the substrate comprises a transparent material.

8. A substrate; a plurality of light-shielding layers overlying the substrate; a covering layer on the substrate and covering the plurality of light-shielding layers; a conductive layer on the coating layer; a plurality of bumps disposed on a portion of the conductive layer; an organic light-emitting unit including an organic material between two adjacent bumps among the plurality of bumps; A light emitting device comprising: A light-emitting element, wherein each of the plurality of bumps has an edge that deviates from an edge of one of the plurality of light-shielding layers in a vertical direction, and the plurality of light-shielding layers are electrically insulated from the conductive layer.

9. The light-emitting element according to claim 8 , wherein an area of ​​the light-shielding layer in the lateral direction is larger than an area of ​​each of the plurality of bumps.

10. The light-emitting element according to claim 8 , wherein the conductive layer comprises a transparent conductive film containing ITO (indium tin oxide), IZO (indium zinc oxide) or IGZO (indium gallium zinc oxide).

11. The light-emitting device according to claim 8 , wherein the conductive layer includes an anode electrode.

12. A light-emitting element as described in claim 8, wherein the distance between each edge of two adjacent bumps among the plurality of bumps is greater than the distance between two light-shielding layers in the plurality of light-shielding layers.

13. The light-emitting device according to claim 8 , wherein the covering layer is formed on the plurality of light-shielding layers by any one of chemical vapor deposition (CVD), physical vapor deposition (PVD), and spin-on glass (SOG spin coating).

14. The light-emitting device of claim 8 , wherein one of the plurality of light-shielding layers can include a recess having a cross-shaped outline that can transmit light emitted from a single organic light-emitting unit.

15. The light-emitting device of claim 8 , wherein one of the plurality of light-shielding layers can include a recess having a cross-shaped outline that can transmit light emitted from the plurality of organic light-emitting units.

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