Semiconductor Device

JP7662431B2Active Publication Date: 2025-04-15KK TOYOTA CHUO KENKYUSHO +3
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Patent Information

Application Number
JP2021107965
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2021-06-29
Publication Date
2025-04-15
Estimated Expiration
2041-06-29

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Patent Text Reader

Abstract

To provide a technology capable of suppressing carrier injection from an electric field shield region.SOLUTION: A semiconductor layer of a semiconductor device has a p-type electric field shield region arranged apart from a trench gate, extending from a lower surface of a body region toward a deep part. In a plan view of the semiconductor layer, the electric field shield region is not arranged within a range where a contact part of the body region exists.SELECTED DRAWING: Figure 1
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Citation Information

Patent Citations

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  • Wide bandgap insulation gate type semiconductor apparatus

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  • Semiconductor device

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  • Semiconductor and manufacturing method therefor

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