Semiconductor device and method for manufacturing the same

Abstract

High performance semiconductor devices and methods for manufacturing semiconductor devices are provided. [Solution] The semiconductor device comprises an active layer and a barrier layer adjacent to the active layer, the active layer containing indium and antimony, and the barrier layer containing aluminum, indium and antimony, the direction in which the barrier layer is stacked on the active layer being the depth direction, and in the distribution of atomic concentration in the depth direction from the active layer to the barrier layer, the position where the hydrogen concentration rises is closer to the active layer than the position where the aluminum concentration rises.

Description

[Technical field]

[0001] The present disclosure relates to semiconductor devices and methods for manufacturing semiconductor devices. [Background technology]

[0002] Compound semiconductors containing InSb are materials with high mobility and small band gaps. Taking advantage of this characteristic, compound semiconductors containing InSb are used in devices such as magnetic sensors, high-speed devices, and IR (infrared) sensors. In realizing devices that use compound semiconductors containing InSb, it is preferable to use AlInSb as the electron barrier layer.

[0003] For example, Patent Document 1 discloses a compound semiconductor substrate including an AlInSb layer having good crystallinity and excellent surface flatness, which is manufactured by using metal organic chemical vapor deposition (MOCVD). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2018-104278 A Summary of the Invention [Problem to be solved by the invention]

[0005] Here, semiconductor devices are used as, for example, IR light emitting devices or IR light receiving devices, and there is a demand for further improvement in emission intensity or detection sensitivity, i.e., a higher SNR (Signal to Noise Ratio) is required for practical use of the semiconductor devices.

[0006] The present disclosure has been made in consideration of the above circumstances, and has an object to provide a high-performance semiconductor device and a method for manufacturing the semiconductor device. [Means for solving the problem]

[0007] (1) A semiconductor device according to an embodiment of the present disclosure, An active layer; a barrier layer adjacent to the active layer, the active layer comprises indium and antimony; the barrier layer comprises aluminum, indium and antimony; In the distribution of atomic concentration in the depth direction from the active layer to the barrier layer, the position where the hydrogen concentration rises is closer to the active layer than the position where the aluminum concentration rises, with the direction in which the barrier layer is laminated on the active layer being the depth direction.

[0008] (2) As an embodiment of the present disclosure, in (1), In the distribution of atomic concentration in the depth direction from the active layer to the barrier layer, the hydrogen concentration reaches a peak and then becomes 50% or less of the peak concentration.

[0009] (3) As an embodiment of the present disclosure, in (1) or (2), In the distribution of atomic concentration in the depth direction from the active layer to the barrier layer, the position of the peak of hydrogen concentration is within a range of 30 nm or less on the active layer side from the interface between the barrier layer and the active layer.

[0010] (4) As an embodiment of the present disclosure, in any one of (1) to (3), In the distribution of atomic concentration in the depth direction from the active layer to the barrier layer, the half-width of the hydrogen concentration peak is 60 nm or less.

[0011] (5) As an embodiment of the present disclosure, in any one of (1) to (4), In the distribution of atomic concentration in the depth direction in the barrier layer, the hydrogen concentration at one end where the barrier layer is adjacent to the active layer is lower than the hydrogen concentration at the other end.

[0012] (6) As an embodiment of the present disclosure, in (5), The barrier layer is doped, and in the distribution of atomic concentration in the depth direction of the barrier layer, the hydrogen concentration monotonically decreases from the one end to the other end.

[0013] (7) As an embodiment of the present disclosure, in any one of (1) to (5), The barrier layer is doped.

[0014] (8) As an embodiment of the present disclosure, in any one of (1) to (7), The active layer and the barrier layers have different lattice constants in an unstrained state.

[0015] (9) As an embodiment of the present disclosure, in any one of (1) to (8), The active layer further includes aluminum.

[0016] (10) A method for manufacturing a semiconductor device according to an embodiment of the present disclosure includes: A method for manufacturing a semiconductor device according to any one of (1) to (9), The method includes a pressure increase annealing step of increasing the pressure in the reaction chamber of the device and annealing the barrier layer before the barrier layer is formed. Effect of the Invention

[0017] According to the present disclosure, a high-performance semiconductor device and a method for manufacturing the semiconductor device can be provided. [Brief description of the drawings]

[0018] [Figure 1] FIG. 1 is a diagram showing an example of distribution of aluminum concentration and hydrogen concentration in a semiconductor device according to an embodiment of the present disclosure. [Diagram 2] FIG. 2 is a diagram showing the defect amount dependency of resistance when the semiconductor device is an infrared device. [Diagram 3]FIG. 3 is a diagram showing a band diagram in the case where the semiconductor device is an infrared device. [Figure 4] FIG. 4 is a diagram showing the defect amount dependency of the mobility in the case where the semiconductor device is a Hall element. [Diagram 5] FIG. 5 is a diagram showing a band diagram in the case where the semiconductor device is a Hall element. [Figure 6] FIG. 6 illustrates the structure of a semiconductor device and is a diagram showing schematic distributions of aluminum concentration and hydrogen concentration. [Figure 7] FIG. 7 is a diagram for explaining dangling bonds and termination by hydrogen. [Figure 8] FIG. 8 is a diagram showing a band diagram in the case where the semiconductor device is a Hall element. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0019] <Semiconductor devices> The semiconductor device according to this embodiment includes an active layer and a barrier layer adjacent to the active layer. The left diagram of FIG. 6 illustrates the structure of the semiconductor device. The semiconductor device may include a substrate. The semiconductor device may also include a first layer provided between the substrate and the active layer, and a second layer adjacent to the barrier layer on the opposite side of the active layer. At least one of the first layer and the second layer may be omitted as appropriate depending on the type of semiconductor device. The semiconductor device is configured by stacking these layers, including at least the active layer and the barrier layer. Hereinafter, the direction in which the barrier layer is stacked on the active layer will be referred to as the depth direction, and the positions of the components will be described.

[0020] Here, the semiconductor device may be an infrared device (IR device). The infrared device is an infrared light emitting element or an infrared light receiving element, and is a collective name for these. An infrared light emitting element is realized with the structure of a semiconductor device described below, and an infrared light receiving element is realized with the same structure. When the semiconductor device is an infrared light emitting element, it may specifically be a light emitting diode (LED). When the semiconductor device is an infrared light receiving element, it may specifically be a photodiode (PD). Also, the semiconductor device may be a Hall element. A case where the semiconductor device is a Hall element will be described in one of the examples described later. In other descriptions of this embodiment, the semiconductor device will be described as an infrared device.

[0021] <Active layer> The active layer is composed of indium (In) and antimony (Sb). The active layer may further contain aluminum (Al). Therefore, the material of the active layer may be InSb or InAlSb, but is not limited to these. The active layer may contain atoms such as Ga and As, and may be composed of an alloy containing these. From the viewpoint of device characteristics, the active layer is preferably a single crystal.

[0022] <Barrier layer> The barrier layer is composed of aluminum (Al), indium (In) and antimony (Sb). Therefore, the material of the barrier layer is, but not limited to, InAlSb. The barrier layer may contain atoms such as Ga and As, and may be composed of an alloy containing these. From the viewpoint of device characteristics, the barrier layer is preferably a single crystal.

[0023] <Substrate> The substrate is not particularly limited as long as it can support layers including an active layer and a barrier layer, and examples thereof include a GaAs substrate, an InP substrate, a GaN substrate, a Si substrate, a quartz substrate, an aluminum substrate, an oxide substrate, an aluminum nitride substrate, and a polyimide flexible substrate.

[0024] <First layer> The first layer may be, for example, a semiconductor layer of a first conductivity type. The first conductivity type may be, for example, n-type. The material of the first layer may be, but is not limited to, InSb, GaAs, InAs, InGaAs, InAlSb, GaAsSb, or InGaP.

[0025] <Second Layer> The second layer may be, for example, a semiconductor layer of a second conductivity type. The second conductivity type may be a conductivity type different from the first conductivity type, for example, p-type. As another example, the first conductivity type may be p-type and the second conductivity type may be n-type. The second layer may be made of, for example, InSb, GaAs, InAs, InGaAs, InAlSb, GaAsSb, or InGaP, but is not limited to these.

[0026] <Hydrogen concentration distribution> As described above, semiconductor devices are required to have a higher SNR. The inventors have conducted extensive research into ways to provide high-performance semiconductor devices and have found that proper termination of dangling bonds can improve performance.

[0027] FIG. 7 is a diagram for explaining dangling bonds and termination by hydrogen. The diagram in the center of FIG. 7 is a semiconductor device, and is the same as FIG. 6. The active layer and the barrier layer have different lattice constants in an unstrained state (left diagram of FIG. 7). Therefore, at the boundary between the active layer and the barrier layer, dangling bonds are likely to occur due to the difference in lattice constants (the amount of defects is likely to increase). Here, hydrogen can terminate the dangling bonds (right diagram of FIG. 7). In other words, hydrogen can reduce dangling bonds and reduce defect levels. The barrier layer may contain hydrogen (H), and the distribution of hydrogen concentration can be adjusted by adjusting the process of the semiconductor device manufacturing method. In the semiconductor device according to this embodiment, hydrogen terminates defects near the interface between the barrier layer and the active layer and reduces defect levels, so that a high SNR can be achieved.

[0028] FIG. 1 shows an example of the distribution of aluminum concentration and hydrogen concentration in a semiconductor device according to this embodiment. The measurement was performed using a SIMS (Secondary Ionization Mass Spectrometer). Specifically, a sector-type SIMS device, "IMS-7f" manufactured by CAMECA, was used. The ion species of the primary ion beam was Cs + The acceleration voltage of the primary ion beam was 15 kV. The polarity of the secondary ion detection was negative. The horizontal axis of Fig. 1 is "depth", which is the distance in the depth direction from the surface of the semiconductor device, with the surface of the semiconductor device (the surface of the layer furthest from the substrate) set to zero as shown in Fig. 6. The vertical axis is normalized concentration. The aluminum concentration was normalized by dividing by the peak (maximum) of the aluminum concentration. Similarly, the hydrogen concentration was normalized by dividing by the peak (maximum) of the hydrogen concentration. As shown in Fig. 1, the peak of the hydrogen concentration is shifted from the peak of the aluminum concentration, and it can be said to be shifted toward the active layer. Below, an appropriate distribution of atomic concentration in the depth direction from the active layer to the barrier layer of a semiconductor device is explained.

[0029] First, it is preferable that hydrogen atoms are localized in order to efficiently terminate defect levels and because hydrogen atoms may inactivate dopants. In particular, when the semiconductor device is an infrared device, the barrier layer may be doped. If hydrogen atoms inactivate the dopants in the barrier layer, the parasitic resistance may increase. Therefore, by limiting the range of hydrogen atoms present in the barrier layer, a high-performance device with low parasitic resistance and capable of terminating defects at the interface can be realized. Specifically, it is important that hydrogen atoms are distributed in large numbers in the vicinity of the active layer and the barrier layer. Here, carriers are likely to accumulate due to the bending of bands (conduction band, valence band) not only at the interface between the active layer and the barrier layer but also in the vicinity of the barrier layer (approximately several tens of nm) of the active layer. Therefore, it is preferable to have a configuration in which the hydrogen concentration is increased not only at the interface but also in the vicinity of the barrier layer of the active layer.

[0030] FIG. 6 illustrates the structure of a semiconductor device and shows schematic distributions of aluminum and hydrogen concentrations. The schematic distribution is an approximation of the detailed distribution as shown in FIG. 1 with a high-order curve. As a specific method, the approximation may be performed by fitting with a Gaussian function. The rising position is an inflection point in a part of the approximated high-order curve that reaches a peak from the active layer toward the barrier layer (in the reverse direction of the depth). In the semiconductor device according to this embodiment, in the distribution of atomic concentration in the depth direction from the active layer to the barrier layer, the rising position of the hydrogen concentration is closer to the active layer side than the rising position of the aluminum concentration. When the semiconductor device has such a distribution of hydrogen and aluminum, hydrogen atoms terminate defects and reduce defect levels, so that a high SNR can be realized.

[0031] Furthermore, from the viewpoint of localizing hydrogen atoms, in the distribution of atomic concentration in the depth direction from the active layer to the barrier layer, after the hydrogen concentration peaks, it is preferable that the hydrogen concentration becomes 70% or less of the peak concentration, and more preferably becomes 50% or less.

[0032] In the distribution of atomic concentration in the depth direction from the active layer to the barrier layer, the hydrogen concentration peak is preferably located at the interface between the barrier layer and the active layer, provided that the hydrogen concentration peak is located within a range of 30 nm or less from the interface toward the active layer.

[0033] From the viewpoint of localizing hydrogen atoms, the half-width of the hydrogen concentration peak in the atomic concentration distribution in the depth direction from the active layer to the barrier layer is preferably 60 nm or less, and from the viewpoint of efficient defect termination by hydrogen, the half-width of the hydrogen concentration peak is preferably 1 nm or more.

[0034] From the viewpoint of localizing hydrogen atoms, it is preferable that the hydrogen concentration in the barrier layer is low. Therefore, it is preferable that the hydrogen concentration at one end of the barrier layer adjacent to the active layer is lower than the hydrogen concentration at the other end in the atomic concentration distribution in the depth direction of the barrier layer. It is also preferable that the barrier layer is doped, and that the hydrogen concentration monotonically decreases from one end to the other end in the atomic concentration distribution in the depth direction of the barrier layer. Here, the monotonically decreasing refers to a monotonically decreasing distribution when the detailed distribution is approximated by a high-order curve.

[0035] Here, when the barrier layer is used as an electron barrier layer, it is preferably p-type doped. When the barrier layer is used as a hole barrier layer, it is preferably n-type doped. However, when the barrier layer is doped, it is preferable that the hydrogen concentration in the barrier layer is low in order to prevent inactivation of the dopant.

[0036] <Method of manufacturing semiconductor devices> The inventors have found that a semiconductor device having the above-mentioned hydrogen concentration distribution can be manufactured based on the manufacturing method of Patent Document 1 by performing a pressure increase annealing process in which the pressure in the reaction chamber of the device is increased and annealed before the barrier layer is formed. An example of a process for manufacturing the semiconductor device according to this embodiment is described below. The above-mentioned semiconductor device can also be manufactured by increasing the hydrogen flow rate based on the manufacturing method of Patent Document 1 in order to localize hydrogen atoms.

[0037] A laminated film is fabricated using MOCVD as follows. First, a zinc-blende type semi-insulating GaAs substrate is prepared. Trimethylindium (TMIn) as an In source, trisdimethylaminoantimony (TDMASb) as an Sb source, and dimethyltellurium (DMTe) as an n-dopant are supplied to the semi-insulating GaAs substrate at a substrate temperature of 500°C to form an n-InSb layer. At this time, the V / III ratio, which is the ratio of the supply amount of group V elements to the supply amount of group III elements, was 5.0. The thickness of the n-InSb layer was 1000 nm. The doping concentration was 1.0×10 19 / cm3 It was.

[0038] Next, at a substrate temperature of 500°C, trimethylindium (TMIn) was supplied as the In source, trisdimethylaminoantimony (TDMASb) as the Sb source, and dimethylzinc (DMZn) as the p-dopant to form a p-InSb layer. At this time, the V / III ratio was 5.0. The p-InSb layer corresponds to the active layer. The thickness of the p-InSb layer was 2000 nm. The doping concentration was 6.0×10 16 / cm 3 It was.

[0039] Then, the supply of each source was stopped, and only hydrogen was flowed into the reaction chamber, and the pressure in the reaction chamber was increased from 50 torr to 300 torr. Annealing was performed for 10 minutes under this condition. After that, the pressure in the reaction chamber was decreased from 300 torr to 50 torr.

[0040] Next, at a substrate temperature of 500°C, tri-tertiary butyl aluminum (TTBAl) was supplied as an Al source, trimethyl indium (TMIn) as an In source, and trisdimethylamino antimony (TDMASb) as an Sb source. Dimethyl zinc (DMZn) was then supplied as a p-dopant to form a p-AlInSb layer. The p-AlInSb layer corresponds to a barrier layer. At this time, the Al source, In source, and Sb source were all supplied together so that the source ratio of Al to In, Al / (Al+In), was 0.50. Then, Al 0.7 In 0.3 In order to form Sb, Al / (Al+In) was increased to 0.70 (i.e., the supply amount of the Al source was increased). At this time, the V / III ratio was 5.0. The thickness of the p-AlInSb layer was 40 nm. The doping concentration was 2.0×10 18 / cm 3 It was.

[0041] Next, at a substrate temperature of 500°C, trimethylindium (TMIn) as an In source, trisdimethylaminoantimony (TDMASb) as an Sb source, and dimethylzinc (DMZn) as a p-dopant were supplied to form a p-InSb layer. The V / III ratio was 5.0. The thickness of the p-InSb layer was 250 nm. The doping concentration was 2.0×10 18 / cm 3 It was.

[0042] <Raw materials> In the above manufacturing method, the In raw material, the Sb raw material, and the Al raw material are not particularly limited as long as they can form an InSb layer and an AlInSb layer. Examples of the In raw material include trimethylindium (TMIn) and triethylindium (TEIn). Examples of the Sb raw material include trimethylantimony (TMSb), triethylantimony (TESb), trisdimethylaminoantimony (TDMASb), and triisopropylantimony (TIPSb). Examples of the Al raw material include trimethylaminealane (TMAAl), triisobutylaluminum (TIBAl), and dimethylaluminum hydride (DMAH). Examples of the Al raw material include dimethylethylaminealane (DMEAAl) and tritertiarybutylaluminum (TTBAl).

[0043] From the viewpoint of the decomposition temperature of the raw material, the In raw material is preferably trimethylindium (TMIn), triethylindium (TEIn) or a combination thereof. From the viewpoint of the long-term stability of the raw material, the Al raw material is preferably tritertiarybutylaluminum (TTBAl). From the viewpoint of suppressing carbon impurities, the Sb raw material is preferably trisdimethylaminoantimony (TDMASb).

[0044] In addition to the above-mentioned raw materials, a dopant may be supplied to control the conductivity type. Examples of the dopant include dimethyl zinc (DMZn), diethyl zinc (DEZn), dimethyl tellurium (DMTe), diethyl tellurium (DETe), tetramethyl tin (TMSn), and tetraethyl tin (TESn).

[0045] <Example 1> The resistance of the IR sensor (IR receiving device) was calculated for the following two laminated film structures (a) and (b). Here, the resistance of the IR sensor (no bias voltage applied) is an important index that determines thermal noise, and it is preferable that it is large. The manufacturing method of the laminated film follows the steps described above.

[0046] The laminated film structures (a) and (b) have an active layer and a barrier layer laminated on an n-InSb layer (corresponding to the first layer in Figure 6), and a p-InSb layer (corresponding to the second layer in Figure 6) laminated on the barrier layer.

[0047] In the laminated film structure (a), the thickness of the n-InSb layer is 1000 nm and the doping concentration is 1.0×10 19 / cm 3 The thickness of the p-InSb layer, which is the active layer, is 2000 nm, and the doping concentration is 6.0×10 16 / cm 3 The barrier layer is p-Al 0.18 In 0.82 The thickness of the Sb layer is 20 nm, and the doping concentration is 2.0×10 18 / cm 3 The thickness of the p-InSb layer is 500 nm, and the doping concentration is 2.0×10 18 / cm 3 It is.

[0048] In the laminated film structure (b), the thickness of the n-InSb layer is 1000 nm and the doping concentration is 1.0×10 19 / cm 3 The active layer is non-doped i-Al. 0.09 In 0.91 The thickness of the Sb layer is 2000 nm. 0.27 In0.73 The thickness of the Sb layer is 20 nm, and the doping concentration is 2.0×10 18 / cm 3 The thickness of the p-InSb layer is 500 nm, and the doping concentration is 2.0×10 18 / cm 3 The height of the energy barrier of the barrier layer against the active layer, which affects the resistance described below, is the same in the laminated film structure (a) and the laminated film structure (b).

[0049] Figure 2 shows the defect amount dependence of resistance for the laminated film structures (a) and (b). The amount of defects in the region (30 nm) of the active layer near the barrier layer was changed and the resistance was calculated. The resistance here is the resistance to the current flowing vertically through the laminated film structure. The resistance on the vertical axis of Figure 2 is normalized to 1 when the defect amount is 0.01 for each of the laminated film structures (a) and (b). As shown in Figure 2, the resistance value improves by reducing the amount of defects near the barrier layer of the active layer. This effect is more pronounced for the laminated film structure (b), i.e., when the active layer contains Al.

[0050] Moreover, Figure 3 is a band diagram of the laminated film structure (a), and is an enlarged view of the vicinity of the active layer and the barrier layer. The vertical axis of Figure 3 indicates the energy of Ec (bottom of the conduction band) and Ev (top of the valence band). The horizontal coordinate of Figure 3 indicates the position in the depth direction. In IR devices, the recombination current in the active layer is an important factor that determines the resistance value. In the active layer, the valence band is bent about 30 nm (arrow part) near the barrier layer. From this, it is estimated that holes are likely to accumulate in this region, and that the recombination current is likely to cause a decrease in the resistance value.

[0051] <Example 2> The electron mobility in the lateral direction (direction perpendicular to the depth direction) was calculated for the following laminated film structure. The mobility is an important index that determines the SNR of the Hall element, and it is preferable that it is large. The manufacturing method of the laminated film follows the above steps.

[0052] The laminated film structure of this embodiment is i-Al 0.1In 0.9 The active layer and barrier layer are laminated on the Sb layer (corresponding to the first layer in FIG. 6). 0.1 In 0.9 The thickness of the Sb layer is 100 nm, and the mobility is 3000 cm 2 / Vs. The thickness of the i-InSb active layer is 100 nm, and the mobility is 52000 cm 2 / Vs. The barrier layer is i-Al 0.1 In 0.9 The thickness of the Sb layer is 100 nm, and the mobility is 3000 cm 2 / Vs.

[0053] Figure 4 shows the defect amount dependency of mobility for a laminated film structure. The mobility here refers to the mobility for a current flowing laterally through the laminated film structure. The mobility was calculated by changing the defect amount in the region of the active layer near the barrier layer (30 nm as in Figure 3). As shown in Figure 4, the mobility of the laminated film is improved by reducing the defect amount near the barrier layer of the active layer.

[0054] FIG. 8 is a band diagram of the laminated film structure of this embodiment, and is an enlarged view of the vicinity of the active layer and the barrier layer. The vertical axis of FIG. 8 indicates the energy of Ec (bottom of the conduction band). The conduction band diagram is important for electron mobility. The horizontal coordinate of FIG. 8 indicates the position in the depth direction. It is estimated that the valence band is bent near the barrier layer in the active layer, where electrons are likely to accumulate, and that the layer is susceptible to defects and mobility reduction. FIG. 5 is a band diagram of a configuration in which the i-InSb layer of the active layer in Example 2 has a film thickness of 300 nm. In the active layer, the valence band is bent at about 60 nm (arrow portion) near the barrier layer. From this, it is estimated that electrons are likely to accumulate in this region, where mobility reduction is likely to occur.

[0055] Although the embodiment has been described above based on the drawings and examples, it should be noted that those skilled in the art can easily make various modifications and corrections based on the present disclosure. Therefore, it should be noted that these modifications and corrections are included in the scope of the present disclosure.

Claims

1. An active layer; a barrier layer adjacent to the active layer, the active layer comprises indium and antimony; the barrier layer comprises aluminum, indium and antimony; a semiconductor device, wherein in a distribution of atomic concentration in a depth direction from the active layer to the barrier layer, the position at which a hydrogen concentration rises is closer to the active layer than the position at which an aluminum concentration rises, with the direction in which the barrier layer is stacked on the active layer being the depth direction.

2. 2. The semiconductor device according to claim 1, wherein in the distribution of atomic concentration in the depth direction from the active layer to the barrier layer, the hydrogen concentration reaches a peak and then becomes 50% or less of the peak concentration.

3. 3. The semiconductor device according to claim 2, wherein in the distribution of atomic concentration in the depth direction from the active layer to the barrier layer, a position of a peak of hydrogen concentration is within a range of 30 nm or less on the active layer side from an interface between the barrier layer and the active layer.

4. 2. The semiconductor device according to claim 1, wherein in the distribution of atomic concentration in the depth direction from the active layer to the barrier layer, a half-width of a hydrogen concentration peak is 60 nm or less.

5. 2. The semiconductor device according to claim 1, wherein in the distribution of atomic concentration in the depth direction in the barrier layer, the hydrogen concentration at one end where the barrier layer is adjacent to the active layer is lower than the hydrogen concentration at the other end.

6. 6. The semiconductor device according to claim 5, wherein the barrier layer is doped, and in the distribution of atomic concentration in the depth direction in the barrier layer, the hydrogen concentration monotonically decreases from the one end to the other end.

7. The semiconductor device of claim 2 or 5, wherein the barrier layer is doped.

8. The semiconductor device according to claim 2 or 5, wherein the active layer and the barrier layer have different lattice constants in an unstrained state.

9. The semiconductor device of claim 1 , wherein the active layer further comprises aluminum.

10. A method for manufacturing a semiconductor device according to any one of claims 1 to 6, comprising the steps of: A method for manufacturing a semiconductor device, comprising a pressure increase annealing step of increasing the pressure in a reaction chamber of the apparatus and annealing the barrier layer before the barrier layer is formed.

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