Overlight detection circuit, light receiving element, and electronic device

Abstract

An excess light amount detection circuit (1) according to the present invention is provided with a MOS transistor and a high-impedance element (Ca). The MOS transistor (Mn1) has a source thereof connected to a vertical signal line (VSL) of an image sensor. The high-impedance element (Ca) is connected to the drain of the MOS transistor (Mn1). This excess light amount detection circuit (1) detects a change in electrical potential of the vertical signal line (VSL) by means of an electrical potential prescribed by a gate potential of the MOS transistor (Mn1), and outputs the electrical potential at a contact point between the drain of the MOS transistor (Mn1) and the high-impedance element (Ca) in the form of a signal indicating a detection result of an excess light amount.

Description

[Technical field]

[0001] The present disclosure relates to an excessive light amount detection circuit, a light receiving element, and an electronic device. [Background technology]

[0002] For example, when extremely bright light, such as sunlight, is incident on an image sensor, the image sensor may erroneously determine that pixels that are actually white are black, resulting in abnormal output in the captured image known as sunspots.

[0003] For this reason, there is an image sensor provided with a comparison circuit that detects the reception of an excessive amount of light by comparing the potential of a vertical signal line that reads out signal charges photoelectrically converted from each imaging pixel with a predetermined threshold value (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2008-283557 A Summary of the Invention [Problem to be solved by the invention]

[0005] However, image sensors that use a comparison circuit to detect excessive light need to have a comparison circuit for each column of image pixels arranged in a matrix. Also, high comparison accuracy is required to detect abnormalities. This requires a large comparison circuit, which increases the circuit size.

[0006] Therefore, the present disclosure proposes an excess light amount detection circuit, a light receiving element, and an electronic device that can detect the amount of excess light received by an image sensor with high accuracy without increasing the circuit size. [Means for solving the problem]

[0007] The excessive light detection circuit according to the present disclosure includes a MOS transistor and a high impedance element. The MOS transistor has a source connected to a vertical signal line of an image sensor. The high impedance element is connected to the drain of the MOS transistor. The excessive light detection circuit detects a potential fluctuation of the vertical signal line based on a potential determined by a gate potential of the MOS transistor, and outputs a potential of a junction between the drain of the MOS transistor and the high impedance element as a signal indicating a detection result of an excessive light amount. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is an explanatory diagram illustrating an example of a configuration of an image sensor according to the present disclosure. [Diagram 2] FIG. 2 is an explanatory diagram illustrating an example of a circuit configuration of an imaging unit according to the present disclosure. [Diagram 3] 4 is a diagram illustrating the operation of the AD conversion circuit according to the present disclosure. FIG. [Figure 4] FIG. 2 is an explanatory diagram illustrating an example of a circuit configuration of a comparator according to the present disclosure. [Diagram 5] 1 is an explanatory diagram of a state when an excessive amount of light is received from a pixel unit according to the present disclosure; [Figure 6] FIG. 2 is an explanatory diagram of a VSL waveform that is a subject of the present disclosure. [Figure 7] FIG. 13 is a diagram showing an example of a sunspot countermeasure circuit according to a comparative example of the present disclosure. [Figure 8] FIG. 11 is an explanatory diagram showing the operation timing and output waveforms of a sunspot countermeasure circuit according to a comparative example of the present disclosure. [Figure 9] FIG. 13 is an explanatory diagram showing changes in current and VSL waveform when a clamp circuit according to a comparative example of the present disclosure is operated. [Figure 10] FIG. 13 is a diagram showing another example of a sunspot countermeasure circuit according to a comparative example of the present disclosure. [Figure 11] FIG. 2 is a diagram illustrating an example of an excessive light amount detection circuit according to the present disclosure. [Figure 12] 11 is an explanatory diagram showing changes in current and VSL waveform when the excessive light detection circuit according to the present disclosure is operated. FIG. [Figure 13] FIG. 2 is a diagram illustrating an example of an excessive light amount detection circuit that detects the reception of an excessive light amount by a Hall sensor according to the present disclosure. [Figure 14] 1 is a plan view showing a schematic configuration of a light receiving element to which an excessive light amount detection circuit according to the present disclosure is applied; [Figure 15] 15 is a schematic diagram showing a cross-sectional configuration taken along line BB' in FIG. 14. [Figure 16] 1 is a cross-sectional view showing a pixel structure to which an excessive light amount detection circuit according to the present disclosure is applied; [Figure 17] 1 is a diagram illustrating an example of a schematic configuration of an endoscopic surgery system. [Figure 18] 2 is a block diagram showing an example of a functional configuration of a camera head and a CCU. FIG. [Figure 19] 1 is a block diagram showing an example of a schematic configuration of a vehicle control system; [Figure 20] 4 is an explanatory diagram showing an example of the installation positions of an outside-vehicle information detection unit and an imaging unit; FIG. [Figure 21] 1 is a block diagram showing an example of the configuration of an imaging device as an electronic device to which the technology according to the present disclosure is applied. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. In the following embodiments, the same components are designated by the same reference numerals, and duplicated descriptions will be omitted.

[0010] [1. Image sensor configuration] First, the configuration of an image sensor 100 provided with an excessive light detection circuit according to the present disclosure will be described with reference to Fig. 1. Fig. 1 is an explanatory diagram showing an example of the configuration of an image sensor 100 according to the present disclosure.

[0011] The image sensor 100 is a device that forms an image of a subject on an imaging surface, photoelectrically converts the light by a photoelectric conversion unit, and outputs the signal charge as a video signal. As shown in Fig. 1, the image sensor 100 includes a plurality of pixel units 10 arranged in a matrix and an AD conversion circuit 11.

[0012] Each pixel unit 10 includes an imaging unit 12, an amplification transistor AMP, and a selection transistor SEL. An example of the circuit configuration of the pixel unit 10 will be described later with reference to FIG. 2. The imaging unit 12 is an electron sensor that photoelectrically converts incident light into electrons. The imaging unit 12 outputs a video signal having a voltage amplitude corresponding to the signal charge obtained by the photoelectric conversion to the amplification transistor AMP.

[0013] The amplification transistor AMP amplifies and outputs a video signal input from the imaging unit 12. One end of the selection transistor SEL is connected to the amplification transistor AMP, and the other end is connected to the vertical signal line VSL.

[0014] A plurality of pixel units 10 having the same configuration are connected to the vertical signal line VSL. The image sensor 100 selects one pixel from the plurality of pixel units 10 by selecting a selection transistor SEL, and transmits a video signal to an AD conversion circuit 11 via the vertical signal line VSL.

[0015] The AD conversion circuit 11 is provided with a comparator 22 for each column. An example of the configuration and operation of the AD conversion circuit 11 will be described with reference to Fig. 3. The AD conversion circuit 11 performs CDS (Correlated Double Sampling) and ADC (Analog-to-Digital Conversion) on a video signal input via a vertical signal line VSL, and outputs the video signal to a horizontal signal line HSL via a switch SW provided for each column.

[0016] [2. Pixel circuit configuration and operation] Next, the circuit configuration and operation of the pixel unit 10 will be described with reference to Fig. 2. Fig. 2 is an explanatory diagram showing an example of the circuit configuration of the pixel unit 10 according to the present disclosure. As shown in Fig. 2, the pixel unit 10 includes a photodiode PD, a transfer transistor TG, a floating diffusion FD, a reset transistor RST, an amplification transistor AMP, and a selection transistor SEL.

[0017] The photodiode PD has an anode connected to ground and a cathode connected to the source of the transfer transistor TG, the drain of which is connected to the floating diffusion FD.

[0018] The floating diffusion FD is connected to the source of the reset transistor RST and the gate of the amplification transistor AMP. The drain of the amplification transistor AMP is connected to a power supply. The source of the amplification transistor AMP is connected to the drain of the selection transistor SEL. The source of the selection transistor SEL is connected to the vertical signal line VSL.

[0019] When capturing an image, the pixel unit 10 first exposes the photodiode PD to light. The photodiode PD photoelectrically converts incident light into a signal charge according to the amount of light received and accumulates the signal charge. When the selection transistor SEL is selected, the pixel unit 10 turns on the reset transistor RST to clear the charge held in the floating diffusion FD. This operation is called a reset.

[0020] After that, the pixel unit 10 turns off the reset transistor RST, but a certain amount of charge remains in the floating diffusion FD due to the effects of charge injection of the reset transistor RST, pumped-up charges, etc. Hereinafter, this state is referred to as the P phase.

[0021] Next, the transfer transistor TG is turned on to transfer the signal charge accumulated in the photodiode PD to the floating diffusion FD. Hereinafter, this state will be called the D phase. A voltage according to the signal charge transferred to the floating diffusion FD is applied to the gate of the amplification transistor AMP.

[0022] The amplifier transistor AMP converts the signal charge into a voltage amplitude corresponding to the amount of charge. In each of the reset, P-phase, and D-phase modes, the voltage amplitude corresponding to the signal charge held in the floating diffusion FD is propagated to the vertical signal line VSL via the selection transistor SEL.

[0023] [3. Operation of AD conversion circuit] Next, the configuration and operation of the AD conversion circuit 11 will be described with reference to Fig. 3. Fig. 3 is a diagram illustrating the operation of the AD conversion circuit 11 according to the present disclosure. As shown in Fig. 3, the AD conversion circuit 11 includes a DAC (Digital to Analog Converter) 21, a comparator 22, a counter 23, and a PLL (Phase Locked Loop circuit) 24.

[0024] The DAC 21 generates a Ramp wave and inputs it to the + terminal of the comparator 22. A P-phase potential is applied to the - terminal of the comparator 22 from the amplifying transistor AMP via the vertical signal line VSL.

[0025] The voltage of the ramp wave starts to drop from the start of the P phase. At the start of the P phase, the ramp wave is set to have a higher potential than the waveform of the P phase potential applied via the vertical signal line VSL (hereinafter, sometimes referred to as the VSL waveform).

[0026] That is, for a certain period of time from the start of the P phase, the Ramp wave has a higher potential than the VSL waveform, and the output value VCO of the comparator 22 is High. After that, when the Ramp wave decreases and falls below the potential of the VSL waveform, the output value VCO of the comparator 22 transitions to Low. The comparator 22 outputs the output value VCO to the counter 23 connected to the comparator 22.

[0027] The PLL 24 generates a reference clock and outputs it to the counter 23. The counter 23 measures the time from the start of the P phase until the above-mentioned logic inversion occurs. Through this operation, the AD conversion circuit 11 converts the voltage amplitude amount of the VSL waveform, which is an analog signal, into time information (count value), which is a digital signal. After measuring the P phase, the AD conversion circuit 11 also measures the D phase in the same manner.

[0028] [4. Comparator configuration] Next, the circuit configuration and operation of the comparator 22 will be described with reference to Fig. 4. Fig. 4 is an explanatory diagram showing an example of the circuit configuration of the comparator 22 according to the present disclosure.

[0029] As shown in FIG. 4, the comparator 22 is a differential amplifier circuit including a first transistor MN1 and a second transistor MN2 that form a differential input stage, a third transistor MP1 and a fourth transistor MP2 that form a current mirror circuit, a current source 25, an auto-zero switch AZSW, a first capacitor C1, and a second capacitor C2.

[0030] Here, in order to improve the accuracy of comparison between the Ramp wave and the VSL waveform, it is desirable that the output value VCO of the comparator 22 be 0 when the offset voltage of the differential amplifier circuit, that is, the potential of the Ramp wave and the potential of the VSL wave, are equal.

[0031] In reality, however, an offset voltage occurs due to the influence of relative variations among the first transistor MN1, the second transistor MN2, the third transistor MP1, and the fourth transistor MP2, the DC operating point, and the like.

[0032] 2, the comparator 22 is provided for each vertical signal line VSL, that is, for each column, but due to variations in the offset voltage for each vertical signal line VSL, abnormalities such as vertical stripes may occur in the captured image. For this reason, the offset voltage needs to be canceled.

[0033] Therefore, in the comparator 22, a reference voltage is applied to the + terminal to which the Ramp wave is input, and the auto-zero switch AZSW is turned ON in a state in which a P-phase potential is applied to the - terminal to which the VSL waveform is input.

[0034] Then, a voltage that is a voltage that is lowered from the power supply voltage VDD by the gate-source voltage Vgs of the third transistor MP1 is applied to the terminal of the first capacitor C1 on the first transistor MN1 side, and a reference voltage is applied to the other terminal from the + terminal. The first capacitor C1 then holds the potential difference between its two terminals.

[0035] Moreover, negative feedback is applied to the gate of the second transistor MN2 so that the drain current of the fourth transistor MP2 and the drain current of the second transistor MN2 become equal.

[0036] Due to the negative feedback, the gate potential of the second transistor MN2 becomes a potential obtained by superimposing the gate potential of the first transistor MN1 with the offset voltage that remains without being canceled by the negative feedback of the differential amplifier circuit. This potential is applied to the second transistor MN2 side terminal of the second capacitor C2, and the P-phase potential is applied to the other terminal. The second capacitor C2 holds the potential difference between both terminals.

[0037] When the auto-zero switch AZSW is turned off in this state, the amount of fluctuation from the reference potential of the ramp wave is applied to the gate of the first transistor MN1 via the first capacitor C1. Meanwhile, on the vertical signal line VSL side, a voltage obtained by subtracting the offset voltage from the P-phase potential is applied to the gate of the second transistor MN2, thereby canceling out the offset voltage of the differential amplifier circuit. The above is the operation of the comparator 22 called auto-zero (AZ).

[0038] Moreover, the comparator 22 performs AZ with the P-phase potential, and then compares the D-phase potential. That is, in the comparator 22, the difference potential between the P-phase and D-phase is applied to the gate of the second transistor MN2, and thus the comparator 22 also performs CDS, which is the P-phase potential minus the D-phase potential. This series of operations of AZ, AD conversion, and CDS is a function called Single slope ADC.

[0039] 5. Issues Next, a phenomenon that is a problem of the present disclosure will be described with reference to Fig. 5 and Fig. 6. Fig. 5 is an explanatory diagram of a state when the pixel unit 10 according to the present disclosure receives an excessive amount of light. Fig. 6 is an explanatory diagram of a VSL waveform that is a problem of the present disclosure.

[0040] The cross-sectional view in Fig. 5 shows the vertical structure of the pixel section 10. The potential diagram in Fig. 5 shows the state of the pixel section 10. Here, among the components shown in Fig. 5, the same components as those shown in Fig. 2 are denoted by the same reference numerals as those shown in Fig. 2, and redundant explanations will be omitted.

[0041] 6, the period during which the timing chart AZ is at a high level indicates the period during AZ, and the period during which the timing chart SEL is at a high level indicates the period during which the selection transistor SEL is ON.

[0042] The period when the timing chart RST is at high level indicates the period when the reset transistor RST is ON.The period when the timing chart TG is at high level indicates the period when the transfer transistor TG is ON.

[0043] The VSL shown by the thick solid line indicates the VSL waveform at high brightness when there is no excessive light. The VSL shown by the dotted line indicates the VSL waveform when the photodiode PD is irradiated with light of ultra-high brightness and a charge exceeding Qs, which is the maximum charge that can be stored in the photodiode PD, is generated. The Ramp shown by the dashed and dotted line indicates a Ramp wave.

[0044] The problem related to the present disclosure occurs during the AZ period in an overlight state. As described above, the offset voltage of the comparator 22 is cancelled by applying the P-phase potential to the VSL side during the AZ period. However, when intense, super-high brightness light such as sunlight is incident on the photodiode PD, a change may occur in the P-phase potential.

[0045] Specifically, as shown in Fig. 5, in the pixel unit 10, light SL is incident on the photodiode PD through an opening provided in the metal light-shielding film ML. Here, Qs shown in Fig. 5 indicates the maximum amount of charge that can be stored in the photodiode PD. Qfd indicates the maximum amount of charge that can be stored in the floating diffusion FD.

[0046] The lower diagram of Figure 5 shows the potential during the P phase after the RST operation is completed. The floating diffusion FD contains a charge e generated by the charge injection of the reset transistor RST. - is maintained.

[0047] In this state, the light irradiation on the photodiode PD is strong, and the charge e - When Qs is exceeded, the charge e - exceeds the barrier of the transfer transistor TG and leaks into the floating diffusion FD.

[0048] Charge e exceeding Qfd - After passing through the reset transistor RST and reaching the power supply voltage VDD line, the charge e held in the floating diffusion FD recombines with holes and disappears. - The amount of continues to increase.

[0049] The potential fluctuation of the vertical signal line VSL when this change occurs is shown in Figure 6. When the amount of light irradiated does not exceed Qs, as shown by the thick solid line, there is no fluctuation in the P-phase potential, and AZ is performed normally at that potential.

[0050] Thereafter, when the transfer transistor TG is turned ON to transition to the D phase, the signal charge is transferred to the floating diffusion FD, causing the potential of the vertical signal line VSL to decrease. However, the amount of this change exceeds the second capacitor C2 shown in Figure 4 and is applied to the gate of the second transistor MN2, so CDS is performed normally.

[0051] However, when the amount of light incident exceeds Qs, as shown by the dotted line in the VSL potential image, the potential of the vertical signal line VSL increases by a charge e exceeding Qs immediately after the floating diffusion FD reset is completed. - reaches the floating diffusion FD, and drops to a potential that is rate-determined by Qfd.

[0052] Therefore, even if the transfer transistor TG is turned on and the signal charge is read out, the charge e - is not held in the floating diffusion FD, and no potential fluctuation occurs in the vertical signal line VSL. In other words, even if the transition to the D phase occurs, no potential difference occurs between the P phase and the D phase. However, the comparator 22 performs AZ at the P phase potential that has dropped due to the Qfd rate limiting factor.

[0053] As mentioned above, there is no potential difference between the P and D phases, so the time from when the Ramp waveform starts to fall to when it logically inverts with the VSL waveform in the P phase is the same as the time from when the Ramp waveform starts to fall to when it logically inverts with the VSL waveform in the D phase. In other words, the brightness of the incident light is determined to be the same before and after exposure. As a result, pixels that should be white in sunlight are erroneously determined to be black. This phenomenon is called sunspots.

[0054] [6. Comparison of sunspot countermeasure circuits] Next, a sunspot countermeasure circuit according to a comparative example of the present disclosure that suppresses the occurrence of sunspots will be described with reference to Fig. 7 and Fig. 8. Fig. 7 is a diagram showing an example of a sunspot countermeasure circuit according to a comparative example of the present disclosure. Fig. 8 is an explanatory diagram showing the operation timing and output waveform of the sunspot countermeasure circuit according to a comparative example of the present disclosure.

[0055] 7, the same components as those shown in Fig. 2 are denoted by the same reference numerals as those shown in Fig. 2, and redundant explanations will be omitted. As shown in Fig. 7, the sunspot countermeasure circuit in the comparative example includes a clamp circuit 101 provided for each pixel unit 10.

[0056] The clamp circuit 101 includes a P-channel MOS (Metal Oxide Semiconductor) transistor (hereinafter referred to as a "PMOS transistor") MP3 and an N-channel MOS transistor (hereinafter referred to as an "NMOS transistor") MN3.

[0057] The PMOS transistor MP3 has a source connected to a power supply, a drain connected to the drain of the NMOS transistor MN3, and a gate to which a predetermined gate voltage XSUNEN is applied. The NMOS transistor MN3 has a source connected to the vertical signal line VSL, and a gate to which a predetermined threshold voltage Vth3 is applied.

[0058] During the AZ period, the clamp circuit 101 sets the gate voltage XSUNEN to Low to turn on the PMOS transistor MP3. When an excessive amount of light is received, charges reach the floating diffusion FD, and the potential of the vertical signal line VSL drops.

[0059] When the potential of the vertical signal line VSL does not drop to the clamp level defined by the predetermined threshold voltage Vth3, the NMOS transistor MN3 is turned OFF. When the potential of the vertical signal line VSL drops to the potential defined by the predetermined threshold voltage Vth3, the NMOS transistor MN3 is turned ON and starts operating.

[0060] Then, when the potential of the vertical signal line VSL drops to a potential where the gate potential of the NMOS transistor MN3 is sufficiently higher than the gate potential of the amplifying transistor AMP, the amplifying transistor AMP turns off.

[0061] Even if the charge in the floating diffusion FD increases further, the potential of the vertical signal line VSL does not drop. Through this operation, the clamp circuit 101 clamps the potential of the vertical signal line VSL to a potential defined by a predetermined threshold voltage Vth3.

[0062] After AZ ends, the clamp circuit 101 sets the gate voltage XSUNEN to High to turn off the PMOS transistor MP3, thereby turning off the NMOS transistor MN3. This turns on the amplification transistor AMP, and the potential of the vertical signal line VSL drops again to a potential corresponding to the amount of charge of the floating diffusion FD, as shown in FIG.

[0063] The potential fluctuation after AZ exceeds the second capacitor C2 shown in Fig. 4 and is transmitted as a potential fluctuation at the gate of the second transistor MN2. A predetermined threshold voltage Vth3 shown in Fig. 7 is set so that the gate potential of the second transistor MN2 is sufficiently lower than the gate potential of the first transistor MN1, and is set so that a logical inversion of the output value VCO of the comparator 22 does not occur.

[0064] 3, if no logic inversion occurs during P-phase counting, that is, if the count reaches the upper limit of the count value, the counter 23 determines that the pixel is a sunspot and converts the video signal to white. This allows the clamp circuit 101 to suppress the occurrence of sunspots.

[0065] However, the clamp circuit 101 has the following problems. The first problem occurs when the operation start timing of the NMOS transistor MN3 becomes small between the gate voltage of the amplification transistor AMP, that is, the potential of the floating diffusion FD (hereinafter referred to as "Vfd"), and the threshold voltage Vth3, which is the gate voltage of the NMOS transistor MN3.

[0066] Here, a current flowing through the circuit shown in Fig. 7 when clamp circuit 101 is operated will be described with reference to Fig. 9. Fig. 9 is an explanatory diagram showing changes in current and VSL waveform when clamp circuit 101 according to a comparative example of the present disclosure is operated.

[0067] FIG. 9 shows the relationship between the above-mentioned potential difference (Vfd-Vth3), the current I1 passed by the amplifying transistor AMP shown in FIG. 7, the current I2 passed by the NMOS transistor MN3, and the potential fluctuation of the vertical signal line VSL.

[0068] Specifically, in the upper diagram of Fig. 9, the change in current I1 accompanying the change in potential difference (Vfd-Vth3) is shown by a solid line, and the change in current I2 is shown by a dotted line. Also, the lower diagram of Fig. 9 shows the potential fluctuation of the vertical signal line VSL accompanying the change in potential difference (Vfd-Vth3).

[0069] Here, the potential of the vertical signal line VSL is expressed by the following formula (1). Moreover, the gate-source voltage Vgs(AMP) of the amplifying transistor AMP in formula (1) is expressed by the following formula (2). Moreover, the relationship of formula (3) below holds between the currents I1, I2, and I3 shown in FIG.

number

number

number

[0070] In the above formula, the current I1 is the drain current of the amplifier transistor AMP, W / L is the aspect ratio of the amplifier transistor AMP, μn is the carrier mobility, Cox is the gate capacitance per unit area, and Vth is the threshold voltage of the amplifier transistor AMP.

[0071] The amplifier transistor AMP and NMOS transistor MN3 shown in Figure 7 form a differential circuit, and the current division ratio of the current I3 changes depending on the potential difference between the gates. Therefore, when the potential difference between the gates becomes small, the NMOS transistor MN3 flows out the current I2, and the current I1 decreases accordingly (see equation (3)). When the current I1 decreases, the gate-source voltage Vgs(AMP) also decreases (see equation (2)).

[0072] The amplifier transistor AMP and the NMOS transistor MN4 through which the current I3 flows form a source follower. Therefore, when the current I1 does not fluctuate, that is, when the gate-source voltage Vgs(AMP) does not fluctuate, the source potential also fluctuates in response to fluctuations in the potential Vfd of the floating diffusion FD, thereby maintaining linearity.

[0073] However, if the current I1 fluctuates, the gate-source voltage Vgs(AMP) also changes according to the amount of fluctuation, and linearity is lost due to factors other than fluctuations in the floating diffusion FD potential Vfd (see equations (1) and (2)).

[0074] For this reason, the potential that can be used as a source follower is only in the range where the potential Vfd of the floating diffusion FD is higher than point A shown in Fig. 9. The potential at which the potential of the vertical signal line VSL is clamped is point B shown in Fig. 9, where the potential of the vertical signal line VSL drops further and the amplifying transistor AMP turns OFF. In other words, the potential drop of the vertical signal line VSL, which should be clamped at point A shown in Fig. 9, stops only at point B, and the output D (dynamic) range of the vertical signal line VSL is narrowed by that potential (problem 1).

[0075] As a measure to solve problem 1, for example, there is a method of detecting the voltage drop of the vertical signal line VSL using a comparison circuit equivalent to the comparator 22. However, in order to reduce the dead zone in problem 1 (the range from point A to point B shown in FIG. 9), the circuit size becomes large because the same accuracy as the comparator 22 is required. Moreover, a circuit for detecting the voltage drop of the vertical signal line VSL needs to be provided for each column, which causes a problem of further increase in the circuit size (problem 2).

[0076] As a method for clamping the potential of the vertical signal line VSL using a configuration other than the clamp circuit 101 shown in FIG. 7, there is a method in which the gate of a PMOS transistor is connected to the vertical signal line VSL and the source is connected to a power supply to clamp the potential at the gate-source voltage Vgs of the PMOS transistor.

[0077] However, in this configuration, the clamp level can only be adjusted by the gate-source voltage Vgs of the PMOS transistor, which makes it difficult to adjust the clamp level because it can only be adjusted by the aspect ratio of the size of the PMOS transistor MP3 (Problem 3).

[0078] 7, the pixel unit 10 is an electron sensor, but problems also occur when the pixel unit 10 is a Hall sensor. Specifically, the clamp circuit 101 shown in Fig. 7 is a circuit that performs clamping operation when the threshold voltage Vth3 exceeds the drop in the potential Vfd of the floating diffusion FD when the pixel unit 10 is an electron sensor.

[0079] On the other hand, if the pixel unit 10 is a Hall sensor, the potential Vfd of the floating diffusion FD rises when there is an excessive amount of light. For this reason, in the clamp circuit 101, the potential of the vertical signal line VSL cannot be clamped by the NMOS transistor MN3.

[0080] Also, for example, it is easily conceivable to replace the NMOS transistor MN3 with a PMOS transistor MP3, as in the detection circuit 102 shown in Fig. 10. However, in this configuration, the amplifier transistor AMP and the PMOS transistor MP3 are shorted with low impedance, and a large current flows between the power supply and ground, as shown by the thick arrow in Fig. 10. Therefore, the clamp circuit 101 according to the comparative example of the present disclosure cannot be used for the Hall sensor (Problem 4).

[0081] [7. Excessive light detection circuit according to the present disclosure] Therefore, the excessive light detection circuit according to the present disclosure solves the above problems 1 to 4, and enables the image sensor to detect the excessive light received with high accuracy without increasing the circuit size or narrowing the output D range. Next, the excessive light detection circuit according to the present disclosure will be described with reference to FIG.

[0082] Fig. 11 is a diagram showing an example of an excessive light amount detection circuit 1 according to the present disclosure. Here, among the components shown in Fig. 11, the same components as those shown in Fig. 7 are denoted by the same reference numerals as those shown in Fig. 7, and redundant explanations will be omitted.

[0083] 11, the excessive light detection circuit 1 is composed of an NMOS transistor Mn1 and a capacitor Ca, and detects the fluctuation of the P-phase potential due to the reception of excessive light such as sunlight. Note that the capacitor Ca may be replaced with a resistor as long as it is a high impedance element.

[0084] The source of the NMOS transistor Mn1 is connected to the vertical signal line VSL of the image sensor, and the drain is connected to one terminal of the capacitor Ca. The other terminal of the capacitor Ca is connected to the power supply voltage VDD line. A predetermined threshold voltage Vth1 is applied to the gate of the NMOS transistor Mn1 via the switch SW1.

[0085] Here, the operation of the excessive light detection circuit 1 will be described. Here, the operation when the floating diffusion FD has finished resetting, the floating diffusion FD holds the P-phase potential, and the AZ period begins will be described. At this time, in the excessive light detection circuit 1, the capacitor Ca is discharged in advance by a circuit not shown, and the potential at point P holds the power supply voltage VDD.

[0086] When an excessive amount of light is incident on the photodiode PD of the pixel unit 10 and the signal charge photoelectrically converted exceeds Qs and reaches the floating diffusion FD, the potential of the floating diffusion FD drops. Following this, the potential of the vertical signal line VSL also drops.

[0087] If the potential of the vertical signal line VSL is equal to or higher than a threshold level (hereinafter referred to as threshold voltage Vth1) defined by the gate potential of the NMOS transistor Mn1, the NMOS transistor Mn1 is OFF, so the capacitor Ca continues to hold the power supply voltage VDD. If the potential of the vertical signal line VSL subsequently falls below the threshold voltage Vth1, the NMOS transistor Mn1 is turned ON, and a current is supplied to the capacitor Ca.

[0088] The potential of capacitor Ca drops linearly with a time constant of Q = CV = IT, but when it drops to a potential where the potential difference between the drain and source of NMOS transistor Mn1 disappears, the NMOS transistor Mn1 enters triode operation, the current decreases, and finally the current becomes zero.

[0089] In this way, when the pixel section 10 receives an excessive amount of light and the potential of the vertical signal line VSL drops to the potential specified by the threshold voltage Vth1, the excessive light detection circuit 1 can clamp the potential of the vertical signal line VSL to the potential at that time.

[0090] At this time, when an excessive amount of light is received by the pixel unit 10, the potential of the connection point P that connects the capacitor Ca and the NMOS transistor Mn1 transitions from a high level to a low level.

[0091] For this reason, the excess light detection circuit 1 transmits the potential of connection point P as the detection result of the excess light from the excess light detection terminal to the subsequent circuit, thereby notifying the subsequent operation that the P phase potential has changed due to the excess light, and can perform processing to convert the video signal of the pixel in question to white, ignoring any further operations.

[0092] After the AZ period, the excessive light detection circuit 1 connects the gate potential of the NMOS transistor Mn1 to ground using the switch SW1, terminating the detection and returning to normal operation. As a result, during the period in which the P-phase and D-phase potentials are propagated via the vertical signal line VSL, the excessive light detection circuit 1 does not affect the signal transmission even during normal operation in which no fluctuations in the P-phase potential occur, because the NMOS transistor Mn1 is OFF.

[0093] Although the case has been described here in which the excessive light detection circuit 1 is connected to the pixel unit 10 and detects the reception of excessive light by the pixel unit 10, the pixel circuit to which the excessive light detection circuit 1 is connected is not limited to the pixel unit 10. For example, when the excessive light detection circuit 1 is connected to an image sensor having a memory-retaining global shutter function, it can also detect the reception of excessive light by the image sensor.

[0094] [8. Consideration of problems] Next, the above problems 1 to 4 will be considered with reference to Fig. 12 and Fig. 13. Fig. 12 is an explanatory diagram showing changes in current and VSL waveform when the excessive light detection circuit 1 according to the present disclosure is operated. Fig. 13 is a diagram showing an example of an excessive light detection circuit 1a that detects the reception of an excessive light amount by the Hall sensor according to the present disclosure.

[0095] FIG. 12 shows the relationship between the potential difference (Vfd-Vth1), the current I1 passed by the amplifying transistor AMP shown in FIG. 11, the current I2 passed by the NMOS transistor Mn1, and the potential fluctuation of the vertical signal line VSL.

[0096] Specifically, the change in current I1 accompanying the change in potential difference (Vfd-Vth1) is shown by a solid line, and the change in current I2 is shown by a dotted line in the upper diagram of Fig. 12. Also, the lower diagram of Fig. 12 shows the potential fluctuation of the vertical signal line VSL accompanying the change in potential difference (Vfd-Vth1).

[0097] Regarding problem 1, as shown in Figure 12, logic inversion is performed using only the current at the moment the NMOS transistor Mn1 starts operating, and then the current is turned off, so there is no deterioration in linearity during inversion. The threshold level can be set to the maximum value of the output D range, ensuring a wide output D range.

[0098] Next, regarding problem 2, the overlight detection circuit 1 can be configured with an NMOS transistor Mn1 and a capacitor Ca, and while having approximately the same number of circuit elements as the clamp circuit 101 shown in Fig. 7, it has almost no dead zone and enables high-precision detection over a wide range. Next, regarding problem 3, by setting the gate potential of the NMOS transistor Mn1, the threshold level for clamping the potential of the vertical signal line VSL can be freely adjusted.

[0099] Next, regarding problem 4, when the photoelectric conversion element is a Hall sensor, the detection element may be a PMOS transistor Mp1 as shown in Fig. 13. Specifically, when the photoelectric conversion element is a Hall sensor, the overlight detection circuit 1a is composed of a PMOS transistor Mp1 and a capacitor Cb. Note that the capacitor Cb may be replaced with a resistor as long as it is a high impedance element.

[0100] The source of the PMOS transistor Mp1 is connected to the vertical signal line VSL of the image sensor, and the drain is connected to one terminal of the capacitor Cb. The other terminal of the capacitor Cb is connected to the source of the NMOS transistor MN4. A predetermined threshold voltage Vth1 is applied to the gate of the PMOS transistor Mp1 via the switch SW1. As a result, when the photoelectric conversion element is a Hall sensor, the excessive light detection circuit 1a can detect the excessive light amount with high accuracy in a wide output D range, similar to the excessive light detection circuit 1 shown in FIG. 11.

[0101] Moreover, the excessive light detection circuit 1, 1a detects the reception of an excessive amount of light based on the potential fluctuation of the vertical signal line VSL itself. Therefore, the excessive light detection circuit 1, 1a can output a signal corresponding to a binary value indicating whether or not an excessive amount of light has been received as a detection result of the excessive light amount to a downstream circuit.

[0102] Therefore, the excessive light detection circuit 1, 1a outputs a signal indicating the result of the detection of the excessive light to the counter 23. The counter 23 stops counting when a signal indicating the reception of an excessive amount of light is input from the excessive light detection circuit 1, 1a. This allows the image sensor 100 to forcibly turn pixels in which the reception of an excessive amount of light is detected to white, thereby preventing the occurrence of sunspots.

[0103] Moreover, the excessive light detection circuit 1, 1a outputs a signal indicating the result of the excessive light detection to the comparator 22 connected to the excessive light detection circuit 1, 1a. When the comparator 22 receives a signal indicating the reception of an excessive amount of light from the excessive light detection circuit 1, 1a, the comparator 22 stops comparing the potential of the vertical signal line VSL with the Ramp wave. This allows the image sensor 100 to forcibly turn pixels in which the reception of an excessive amount of light is detected to white, thereby preventing the occurrence of sunspots.

[0104] In addition, when the excessive light detection circuit 1, 1a detects the reception of an excessive amount of light, the excessive light detection circuit 1, 1a outputs a charge e generated by photoelectric conversion to the positive terminal of the comparator 22 instead of the potential of the vertical signal line VSL. -In this case, the image sensor 100 outputs a dummy potential signal that corresponds to the case where high luminance light whose intensity does not exceed Qs is received. This allows the image sensor 100 to prevent the occurrence of sunspots.

[0105] [9. Example of application of over-light detection circuit] Next, a light receiving element to which the excessive light detection circuit according to the present disclosure is applied will be described with reference to Fig. 14 and Fig. 15. Fig. 14 and Fig. 15 show a schematic configuration of a light receiving element 110 to which the excessive light detection circuit 1, 1a according to the present disclosure is applied. Fig. 14 shows a planar configuration of the light receiving element 110, and Fig. 15 shows a cross-sectional configuration along line B-B' in Fig. 14.

[0106] The light receiving element 110 is applied to an infrared sensor using a compound semiconductor material such as a III-V group semiconductor, and has a photoelectric conversion function for light having a wavelength in the visible region (e.g., 380 nm or more and less than 780 nm) to the short infrared region (e.g., 780 nm or more and less than 2400 nm). The light receiving element 110 is provided with a plurality of light receiving unit regions P1 (pixels P1) arranged, for example, two-dimensionally (FIG. 15).

[0107] The light receiving element 110 has a central element region R1 and a peripheral region R2 that is provided outside the element region R1 and surrounds the element region R1 (FIG. 14). The light receiving element 110 has a conductive film 15B that is provided from the element region R1 to the peripheral region R2. The conductive film 15B has an opening in a region that faces the center of the element region R1.

[0108] The light receiving element 110 has a laminated structure of an element substrate 30 and a readout circuit substrate 40, which is an example of a circuit substrate (FIG. 15). One surface of the element substrate 30 is a light incident surface (light incident surface S1), and the surface opposite to the light incident surface S1 (the other surface) is a bonding surface (bonding surface S2) with the readout circuit substrate 40.

[0109] The element substrate 30 has, from the position closest to the readout circuit substrate 40, a wiring layer 10W, a first electrode 31, a semiconductor layer 10S (first semiconductor layer), a second electrode 15, and a passivation film 16 in this order. A surface of the semiconductor layer 10S facing the wiring layer 10W and an end face (side face) are covered with an insulating film 17. The readout circuit substrate 40 is a so-called ROIC (Readout Integrated Circuit), and has a wiring layer 20W and a multilayer wiring layer 22C in contact with the bonding surface S2 of the element substrate 30, and a semiconductor substrate 35 facing the element substrate 30 with the wiring layer 20W and the multilayer wiring layer 22C in between.

[0110] The element substrate 30 has a semiconductor layer 10S in the element region R1. In other words, the region in which the semiconductor layer 10S is provided is the element region R1 of the light receiving element 110. In the element region R1, a region exposed from the conductive film 15B (a region facing the opening of the conductive film 15B) is the light receiving region. In the element region R1, a region covered with the conductive film 15B is an OPB (Optical Black) region R1B. The OPB region R1B is provided so as to surround the light receiving region. The OPB region R1B is used to obtain a black level pixel signal. The element substrate 30 has a buried layer 18 together with an insulating film 17 in the peripheral region R2. In the peripheral region R2, holes H1 and H2 are provided that penetrate the element substrate 30 and reach the readout circuit board 40. In the light receiving element 110, light is incident on the semiconductor layer 10S from the light incident surface S1 of the element substrate 30 through the passivation film 16, the second electrode 15, and the second contact layer 14. The signal charge photoelectrically converted in the semiconductor layer 10S moves through the first electrode 31 and the wiring layer 10W, and is read out by the readout circuit board 40. The configuration of each part will be described below.

[0111] The wiring layer 10W is provided across the element region R1 and the peripheral region R2, and has a bonding surface S2 with the readout circuit board 40. In the light receiving element 110, the bonding surface S2 of the element substrate 30 is provided in the element region R1 and the peripheral region R2, and for example, the bonding surface S2 of the element region R1 and the bonding surface S2 of the peripheral region R2 form the same plane. As will be described later, in the light receiving element 110, the bonding surface S2 of the peripheral region R2 is formed by providing an embedding layer 18.

[0112] The wiring layer 10W has a contact electrode 19E and a dummy electrode 19ED in, for example, the interlayer insulating films 19A and 19B. For example, the interlayer insulating film 19B is disposed on the readout circuit board 40 side, and the interlayer insulating film 19A is disposed on the first contact layer 32 side, and these interlayer insulating films 19A and 19B are laminated. The interlayer insulating films 19A and 19B are made of, for example, an inorganic insulating material. Examples of the inorganic insulating material include silicon nitride (SiN), aluminum oxide (Al2O3), silicon oxide (SiO2), and hafnium oxide (HfO2). The interlayer insulating films 19A and 19B may be made of the same inorganic insulating material.

[0113] The contact electrode 19E is provided in, for example, the element region R1. The contact electrode 19E is for electrically connecting the first electrode 31 and the readout circuit board 40, and is provided for each pixel P1 in the element region R1. Adjacent contact electrodes 19E are electrically separated by the buried layer 18 and the interlayer insulating films 19A and 19B. The contact electrode 19E is formed of, for example, a copper (Cu) pad, and is exposed to the bonding surface S2. The dummy electrode 19ED is provided in, for example, the peripheral region R2. The dummy electrode 19ED is connected to a dummy electrode 22ED of a wiring layer 20W described later. By providing the dummy electrode 19ED and the dummy electrode 22ED, it is possible to improve the strength of the peripheral region R2. The dummy electrode 19ED is formed in, for example, the same process as the contact electrode 19E. The dummy electrode 19ED is formed of, for example, a copper (Cu) pad, and is exposed to the bonding surface S2.

[0114] The first electrode 31 provided between the contact electrode 19E and the semiconductor layer 10S is an electrode (anode) to which a voltage for reading out signal charges (holes or electrons, hereinafter, for convenience, the signal charges are described as holes) generated in the photoelectric conversion layer 33 is supplied, and is provided for each pixel P1 in the element region R1. The first electrode 31 is provided so as to fill the opening of the insulating film 17, and is in contact with the semiconductor layer 10S (more specifically, the diffusion region 32A described later). For example, the first electrode 31 is larger than the opening of the insulating film 17, and a part of the first electrode 31 is provided in the buried layer 18. That is, the upper surface of the first electrode 31 (the surface on the semiconductor layer 10S side) is in contact with the diffusion region 32A, and the lower surface and part of the side surface of the first electrode 31 are in contact with the buried layer 18. Adjacent first electrodes 31 are electrically separated by the insulating film 17 and the buried layer 18.

[0115] The first electrode 31 is made of, for example, any one of titanium (Ti), tungsten (W), titanium nitride (TiN), platinum (Pt), gold (Au), germanium (Ge), palladium (Pd), zinc (Zn), nickel (Ni) and aluminum (Al), or an alloy containing at least one of them. The first electrode 31 may be a single film of such a constituent material, or may be a laminated film combining two or more kinds. For example, the first electrode 31 is made of a laminated film of titanium and tungsten. The thickness of the first electrode 31 is, for example, several tens of nm to several hundreds of nm.

[0116] The semiconductor layer 10S includes, for example, from a position close to the wiring layer 10W, a first contact layer 32, a photoelectric conversion layer 33, and a second contact layer 34. The first contact layer 32, the photoelectric conversion layer 33, and the second contact layer 34 have the same planar shape, and the end faces of each are disposed at the same position in a planar view.

[0117] The first contact layer 32 is provided, for example, in common to all pixels P1, and is disposed between the insulating film 17 and the photoelectric conversion layer 33. The first contact layer 32 serves to electrically separate adjacent pixels P1, and the first contact layer 32 is provided with, for example, a plurality of diffusion regions 32A. By using, for the first contact layer 32, a compound semiconductor material having a band gap larger than the band gap of the compound semiconductor material constituting the photoelectric conversion layer 33, it is also possible to suppress dark current. For example, n-type InP (indium phosphide) can be used for the first contact layer 32.

[0118] The diffusion regions 32A provided in the first contact layer 32 are arranged to be spaced apart from each other. The diffusion region 32A is arranged for each pixel P1, and the first electrode 31 is connected to each diffusion region 32A. The diffusion region 32A is also provided in the OPB region R1B. The diffusion region 32A is for reading out the signal charge generated in the photoelectric conversion layer 33 for each pixel P1, and contains, for example, a p-type impurity. An example of the p-type impurity is Zn (zinc). In this way, a pn junction interface is formed between the diffusion region 32A and the first contact layer 32 other than the diffusion region 32A, so that adjacent pixels P1 are electrically isolated. The diffusion region 32A is provided, for example, in the thickness direction of the first contact layer 32, and is also provided in a part of the thickness direction of the photoelectric conversion layer 33.

[0119] The photoelectric conversion layer 33 between the first electrode 31 and the second electrode 15, more specifically, between the first contact layer 32 and the second contact layer 34, is provided, for example, in common to all pixels P1. The photoelectric conversion layer 33 absorbs light of a predetermined wavelength and generates a signal charge, and is made of a compound semiconductor material such as an i-type III-V group semiconductor. Examples of the compound semiconductor material constituting the photoelectric conversion layer 33 include InGaAs (indium gallium arsenide), InAsSb (indium arsenide antimony), InAs (indium arsenide), InSb (indium antimony), and HgCdTe (mercury cadmium telluride). The photoelectric conversion layer 33 may be made of Ge (germanium). In the photoelectric conversion layer 33, for example, photoelectric conversion of light having a wavelength in the visible range to the short infrared range is performed.

[0120] The second contact layer 34 is provided, for example, in common to all the pixels P1. The second contact layer 34 is provided between the photoelectric conversion layer 33 and the second electrode 15 and is in contact with them. The second contact layer 34 is a region where charges discharged from the second electrode 15 move, and is made of, for example, a compound semiconductor containing n-type impurities. The second contact layer 34 can be made of, for example, n-type InP (indium phosphide).

[0121] The second electrode 15 is provided on the second contact layer 34 (light incident side) as an electrode common to each pixel P1, for example, so as to be in contact with the second contact layer 34. The second electrode 15 is for discharging charges (cathode) that are not used as signal charges among the charges generated in the photoelectric conversion layer 33. For example, when holes are read out as signal charges from the first electrode 31, for example, electrons can be discharged through the second electrode 15. The second electrode 15 is formed of a conductive film that can transmit incident light such as infrared rays. For example, ITO (Indium Tin Oxide) or ITiO (In2O3-TiO2) can be used for the second electrode 15. For example, the second electrode 15 may be provided in a lattice shape so as to separate adjacent pixels P1. For this second electrode 15, a conductive material with low light transmittance can be used.

[0122] The passivation film 16 covers the second electrode 15 from the light incident surface S1 side. The passivation film 16 may have an anti-reflection function. For example, silicon nitride (SiN), aluminum oxide (Al2O3), silicon oxide (SiO2), tantalum oxide (Ta2O3), etc. may be used for the passivation film 16. The passivation film 16 has an opening 16H in the OPB region R1B. The opening 16H is provided, for example, in the shape of a frame surrounding the light receiving region (FIG. 1A). The opening 16H may be, for example, a square or circular hole in a plan view. The opening 16H in the passivation film 16 electrically connects the conductive film 15B to the second electrode 15.

[0123] The insulating film 17 is provided between the first contact layer 32 and the buried layer 18, covers an end face of the first contact layer 32, an end face of the photoelectric conversion layer 33, an end face of the second contact layer 34, and an end face of the second electrode 15, and is in contact with the passivation film 16 in the peripheral region R2. The insulating film 17 is made of, for example, silicon oxide (SiO X) or an oxide such as aluminum oxide (Al2O3). The insulating film 17 may be configured with a laminated structure made up of a plurality of films. The insulating film 17 may be configured with a silicon (Si)-based insulating material such as silicon oxynitride (SiON), carbon-containing silicon oxide (SiOC), silicon nitride (SiN), and silicon carbide (SiC). The insulating film 17 has a thickness of, for example, several tens of nm to several hundreds of nm.

[0124] The conductive film 15B is provided from the OPB region R1B to the hole H1 in the peripheral region R2. The conductive film 15B contacts the second electrode 15 at the opening 16H of the passivation film 16 provided in the OPB region R1B, and contacts the wiring (later-described wiring 22CB) of the readout circuit board 20 through the hole H1. This allows a voltage to be supplied from the readout circuit board 40 to the second electrode 15 through the conductive film 15B. The conductive film 15B functions as a voltage supply path to the second electrode 15 and also functions as a light-shielding film, forming the OPB region R1B. The conductive film 15B is made of a metal material including, for example, tungsten (W), aluminum (Al), titanium (Ti), molybdenum (Mo), tantalum (Ta), or copper (Cu). A passivation film may be provided on the conductive film 15B.

[0125] An adhesive layer B may be provided between the end of the second contact layer 34 and the second electrode 15. As described later, this adhesive layer B is used when forming the light receiving element 110, and serves to bond the semiconductor layer 10S to a temporary substrate. The adhesive layer B is made of, for example, tetraethoxysilane (TEOS) or silicon oxide (SiO2). The adhesive layer B is provided, for example, wider than the end face of the semiconductor layer 10S, and is covered by the buried layer 18 together with the semiconductor layer 10S. An insulating film 17 is provided between the adhesive layer B and the buried layer 18.

[0126] In the light receiving element 110, the photoelectric conversion layer 33 (photodiode PD) is formed on the element substrate 30. In addition, the transfer transistor TG, the reset transistor RST, the amplification transistor AMP, the selection transistor SEL, the NMOS transistor Mn1, the switch SW1, the capacitor Ca provided in the excessive light detection circuit 1, and the PMOS transistor Mp1, the switch SW1, and the capacitor Cb provided in the excessive light detection circuit 1a are all formed on the readout circuit substrate 40.

[0127] The transfer transistor TG, reset transistor RST, amplifying transistor AMP, selection transistor SEL, NMOS transistor Mn1, switch SW1, capacitor Ca of the excessive light detection circuit 1, and PMOS transistor Mp1, switch SW1, and capacitor Cb of the excessive light detection circuit 1a, which are provided on the readout circuit board 40, may be formed separately on multiple substrates or chips, or some of these elements may be formed on the substrate on which the photoelectric conversion layer 33 is formed.

[0128] In this way, when the excessive light detection circuit 1, 1a is applied to the light receiving element 110, it is provided on the readout circuit board 40. This allows the excessive light detection circuit 1, 1a to detect the reception of excessive light by the image sensor with high accuracy without increasing the circuit scale of the light receiving element 110.

[0129] An example of a pixel structure to which the excessive light detection circuit according to the present disclosure is applied will be described with reference to Fig. 16. Fig. 16 is a cross-sectional view showing a pixel structure to which the excessive light detection circuit according to the present disclosure is applied.

[0130] An element substrate is provided on the upper side, which is the light incident side, of the semiconductor substrate 60, which is an example of a circuit substrate. In the element substrate, an N-type semiconductor thin film 41, which serves as a photoelectric conversion section, is formed on the entire surface of the pixel array region. For the N-type semiconductor thin film 41, InGaP, InAlP, InGaAs, InAlAs, or even a compound semiconductor with a chalcopyrite structure is used. A compound semiconductor with a chalcopyrite structure is a material that can obtain a high light absorption coefficient and high sensitivity over a wide wavelength range, and is preferably used as the N-type semiconductor thin film 41 for photoelectric conversion. Such a compound semiconductor with a chalcopyrite structure is composed of elements surrounding a group IV element, such as Cu, Al, Ga, In, S, and Se, and examples thereof include CuGaInS-based mixed crystals, CuAlGaInS-based mixed crystals, and CuAlGaInSSe-based mixed crystals.

[0131] In addition to the above-mentioned compound semiconductors, amorphous silicon (Si), germanium (Ge), a quantum dot photoelectric conversion film, an organic photoelectric conversion film, etc. may be used as the material of the N-type semiconductor thin film 41. In this embodiment, it is assumed that an InGaAs compound semiconductor is used as the N-type semiconductor thin film 41.

[0132] A high-concentration P-type layer 42 constituting a pixel electrode is formed for each pixel on the lower side of the N-type semiconductor thin film 41, which is the semiconductor substrate 60 side. Between the high-concentration P-type layers 42 formed for each pixel, an N-type layer 43 is formed of a compound semiconductor such as InP as a pixel isolation region that isolates each pixel. In addition to functioning as a pixel isolation region, this N-type layer 43 also has the role of preventing dark current.

[0133] Meanwhile, an N-type layer 44 having a higher concentration than the N-type semiconductor thin film 41 is also formed on the upper side, which is the light incident side, of the N-type semiconductor thin film 41, using a compound semiconductor such as InP used as the pixel separation region. This high-concentration N-type layer 44 functions as a barrier layer that prevents the backflow of charges generated in the N-type semiconductor thin film 41. The material of the high-concentration N-type layer 44 can be, for example, a compound semiconductor such as InGaAs, InP, or InAlAs.

[0134] An anti-reflection film 45 is formed on the high-concentration N-type layer 44 as a barrier layer. Examples of materials that can be used for the anti-reflection film 45 include silicon nitride (SiN), hafnium oxide (HfO2), aluminum oxide (Al2O3), zirconium oxide (ZrO2), tantalum oxide (Ta2Ta5), and titanium oxide (TiO2).

[0135] Either the high-concentration N-type layer 44 or the anti-reflective film 45 also functions as the upper electrode of the electrodes sandwiching the N-type semiconductor thin film 41 from above and below, and a predetermined voltage Va is applied to the high-concentration N-type layer 44 or the anti-reflective film 45 as the upper electrode.

[0136] A color filter 46 and an on-chip lens 47 are further formed on the anti-reflection film 45. The color filter 46 is a filter that transmits any one of R (red), G (green), and B (blue) light (light of a certain wavelength), and is arranged in the pixel array region 3 in a so-called Bayer array, for example.

[0137] A passivation layer 51 and an insulating layer 52 are formed below the high-concentration P-type layer 42 constituting the pixel electrode and the N-type layer 43 serving as a pixel isolation region. Connection electrodes 53A and 53B and a bump electrode 54 are formed to penetrate the passivation layer 51 and the insulating layer 52. The connection electrodes 53A and 53B and the bump electrode 54 electrically connect the high-concentration P-type layer 42 constituting the pixel electrode to a capacitance element that accumulates electric charge.

[0138] When applied to the pixel structure shown in Fig. 16, the excessive light detection circuit 1, 1a is provided on a semiconductor substrate 60, which is an example of a circuit substrate. This allows the excessive light detection circuit 1, 1a to detect the amount of excessive light received by the image sensor with high accuracy, without increasing the circuit scale of the pixel structure shown in Fig. 16.

[0139] [10. Application to endoscopic surgery system] The technology according to the present disclosure (the present technology) can be applied to various products. As a specific example, the excessive light amount detection circuit 1, 1a can be applied to an infrared receiving element, an imaging device using the same, an electronic device, etc.

[0140] The excessive light detection circuits 1, 1a can be used in a wide variety of imaging and sensing applications, including cameras mounted on ordinary digital cameras and smartphones, surveillance cameras, cameras for industrial equipment used for inspections in factories, distance measuring sensors such as ToF (Time of Flight) sensors, infrared sensors, etc. For example, the technology disclosed herein may be applied to an endoscopic surgery system.

[0141] FIG. 17 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technology according to the present disclosure (the present technology) can be applied.

[0142] 17 shows a state in which an operator (doctor) 11131 is performing surgery on a patient 11132 on a patient bed 11133 using an endoscopic surgery system 11000. As shown in the figure, the endoscopic surgery system 11000 is composed of an endoscope 11100, other surgical tools 11110 such as an insufflation tube 11111 and an energy treatment tool 11112, a support arm device 11120 that supports the endoscope 11100, and a cart 11200 on which various devices for endoscopic surgery are mounted.

[0143] The endoscope 11100 is composed of a lens barrel 11101, a region of a predetermined length from the tip of which is inserted into a body cavity of a patient 11132, and a camera head 11102 connected to the base end of the lens barrel 11101. In the illustrated example, the endoscope 11100 is configured as a so-called rigid scope having a rigid lens barrel 11101, but the endoscope 11100 may be configured as a so-called flexible scope having a flexible lens barrel.

[0144] An opening into which an objective lens is fitted is provided at the tip of the lens barrel 11101. A light source device 11203 is connected to the endoscope 11100, and light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 11101, and is irradiated via the objective lens toward an observation target in the body cavity of the patient 11132. The endoscope 11100 may be a direct-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

[0145] An optical system and an image sensor are provided inside the camera head 11102, and reflected light (observation light) from an observation target is collected on the image sensor by the optical system. The observation light is photoelectrically converted by the image sensor to generate an electrical signal corresponding to the observation light, i.e., an image signal corresponding to an observation image. The image signal is transmitted to a camera control unit (CCU) 11201 as RAW data.

[0146] The CCU 11201 is configured with a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and performs overall control of the operations of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives an image signal from the camera head 11102, and performs various types of image processing on the image signal, such as development processing (demosaic processing), for displaying an image based on the image signal.

[0147] Under the control of the CCU 11201, the display device 11202 displays an image based on an image signal that has been subjected to image processing by the CCU 11201.

[0148] The light source device 11203 is composed of a light source such as an LED (Light Emitting Diode), and supplies the endoscope 11100 with irradiation light when photographing an operation site or the like.

[0149] The input device 11204 is an input interface for the endoscopic surgery system 11000. A user can input various information and instructions to the endoscopic surgery system 11000 via the input device 11204. For example, the user inputs an instruction to change the imaging conditions (type of irradiated light, magnification, focal length, etc.) of the endoscope 11100.

[0150] The treatment tool control device 11205 controls the driving of the energy treatment tool 11112 for cauterizing tissue, incising, sealing blood vessels, etc. The insufflation device 11206 sends gas into the body cavity of the patient 11132 via the insufflation tube 11111 to inflate the body cavity for the purpose of securing the field of view of the endoscope 11100 and securing the working space of the surgeon. The recorder 11207 is a device capable of recording various information related to the surgery. The printer 11208 is a device capable of printing various information related to the surgery in various formats such as text, image, or graph.

[0151] The light source device 11203 that supplies irradiation light to the endoscope 11100 when photographing the surgical site can be composed of a white light source composed of, for example, an LED, a laser light source, or a combination of these. When the white light source is composed of a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, so that the white balance of the captured image can be adjusted in the light source device 11203. In this case, it is also possible to capture images corresponding to each of the RGB colors in a time-division manner by irradiating the observation object with laser light from each of the RGB laser light sources in a time-division manner and controlling the driving of the image sensor of the camera head 11102 in synchronization with the irradiation timing. According to this method, a color image can be obtained without providing a color filter to the image sensor.

[0152] The light source device 11203 may be controlled to change the intensity of the light it outputs at predetermined time intervals. The driving of the image sensor of the camera head 11102 may be controlled in synchronization with the timing of the change in the light intensity to obtain images in a time-division manner, and the images may be synthesized to generate an image with a high dynamic range that is free of so-called blackout and whiteout.

[0153] The light source device 11203 may be configured to supply light of a predetermined wavelength band corresponding to the special light observation. In the special light observation, for example, by utilizing the wavelength dependency of light absorption in body tissue, a narrow band light is irradiated compared to the irradiated light (i.e., white light) during normal observation, and a predetermined tissue such as blood vessels on the mucous membrane surface is photographed with high contrast, so-called narrow band imaging is performed. Alternatively, in the special light observation, a fluorescent observation may be performed in which an image is obtained by fluorescence generated by irradiating an excitation light. In the fluorescent observation, it is possible to irradiate an excitation light to a body tissue and observe the fluorescence from the body tissue (autofluorescence observation), or to locally inject a reagent such as indocyanine green (ICG) into the body tissue and irradiate the body tissue with excitation light corresponding to the fluorescent wavelength of the reagent to obtain a fluorescent image. The light source device 11203 may be configured to supply narrow band light and / or excitation light corresponding to such special light observation.

[0154] FIG. 18 is a block diagram showing an example of the functional configuration of the camera head 11102 and the CCU 11201 shown in FIG.

[0155] The camera head 11102 has a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 has a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other by a transmission cable 11400 so as to be able to communicate with each other.

[0156] The lens unit 11401 is an optical system provided at the connection portion with the lens barrel 11101. Observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and enters the lens unit 11401. The lens unit 11401 is configured by combining a plurality of lenses including a zoom lens and a focus lens.

[0157] The imaging unit 11402 is composed of an imaging element. The imaging element constituting the imaging unit 11402 may be one (so-called single-plate type) or multiple (so-called multi-plate type). When the imaging unit 11402 is composed of a multi-plate type, for example, each imaging element may generate an image signal corresponding to each of RGB, and a color image may be obtained by combining the image signals. Alternatively, the imaging unit 11402 may be configured to have a pair of imaging elements for acquiring image signals for the right eye and the left eye corresponding to 3D (Dimensional) display. By performing 3D display, the surgeon 11131 can more accurately grasp the depth of the biological tissue in the surgical site. Note that when the imaging unit 11402 is composed of a multi-plate type, multiple lens units 11401 may be provided corresponding to each imaging element.

[0158] Furthermore, the imaging unit 11402 does not necessarily have to be provided in the camera head 11102. For example, the imaging unit 11402 may be provided inside the lens barrel 11101, immediately behind the objective lens.

[0159] The driving unit 11403 is configured by an actuator, and moves the zoom lens and focus lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera head control unit 11405. This allows the magnification and focus of the image captured by the imaging unit 11402 to be appropriately adjusted.

[0160] The communication unit 11404 is configured by a communication device for transmitting and receiving various information to and from the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 to the CCU 11201 via the transmission cable 11400 as RAW data.

[0161] Furthermore, the communication unit 11404 receives a control signal for controlling the driving of the camera head 11102 from the CCU 11201, and supplies the control signal to the camera head control unit 11405. The control signal includes information on the imaging conditions, such as information specifying the frame rate of the captured image, information specifying the exposure value at the time of capturing the image, and / or information specifying the magnification and focus of the captured image.

[0162] The image capturing conditions such as the frame rate, exposure value, magnification, and focus may be appropriately specified by a user, or may be automatically set by the control unit 11413 of the CCU 11201 based on an acquired image signal. In the latter case, the endoscope 11100 is equipped with a so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function.

[0163] The camera head control unit 11405 controls the driving of the camera head 11102 based on a control signal received from the CCU 11201 via the communication unit 11404.

[0164] The communication unit 11411 is configured with a communication device for transmitting and receiving various information to and from the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.

[0165] Furthermore, the communication unit 11411 transmits, to the camera head 11102, a control signal for controlling the driving of the camera head 11102. The image signal and the control signal can be transmitted by electrical communication, optical communication, or the like.

[0166] The image processing unit 11412 performs various types of image processing on the image signal, which is RAW data sent from the camera head 11102 .

[0167] The control unit 11413 performs various controls related to imaging of the surgical site etc. by the endoscope 11100 and display of the captured image obtained by imaging the surgical site etc. For example, the control unit 11413 generates a control signal for controlling the driving of the camera head 11102.

[0168] Further, the control unit 11413 causes the display device 11202 to display the captured image showing the surgical site, etc., based on the image signal that has been image-processed by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition techniques. For example, the control unit 11413 can recognize surgical tools such as forceps, specific living body parts, bleeding, mist when the energy treatment tool 11112 is used, etc., by detecting the shape and color of the edge of an object included in the captured image. When the control unit 11413 causes the display device 11202 to display the captured image, it may use the recognition result to superimpose various types of surgery support information on the image of the surgical site. By superimposing and presenting the surgery support information to the surgeon 11131, the burden on the surgeon 11131 can be reduced and the surgeon 11131 can proceed with the surgery reliably.

[0169] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable for communication of electrical signals, an optical fiber for optical communication, or a composite cable of these.

[0170] Here, in the illustrated example, communication is performed wired using a transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may also be performed wirelessly.

[0171] An example of an endoscopic surgery system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to, for example, the endoscope 11100, the imaging unit 11402 of the camera head 11102, the image processing unit 11412 of the CCU 11201, and the like, among the above-described configurations. Specifically, for example, the excess light detection circuit 1 of FIG. 11 can be applied to the imaging unit 10402. By applying the technology according to the present disclosure to the imaging unit 10402, it is possible to obtain a clearer image of the surgical site by eliminating the influence of excess light, and therefore it is possible for the surgeon to reliably confirm the surgical site.

[0172] Although an endoscopic surgery system has been described as an example here, the technology disclosed herein may also be applied to other systems, such as a microsurgery system.

[0173] [11. Mobile application examples] Furthermore, the technology according to the present disclosure (the present technology) may be realized as an apparatus mounted on any type of moving body, such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, or a robot.

[0174] FIG. 19 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a moving object control system to which the technology according to the present disclosure can be applied.

[0175] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 19, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also, as functional configurations of the integrated control unit 12050, a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (interface) 12053 are illustrated.

[0176] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0177] The body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as head lamps, back lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves or signals of various switches transmitted from a portable device that replaces a key may be input to the body system control unit 12020. The body system control unit 12020 receives the input of these radio waves or signals and controls the door lock device, power window device, lamps, and the like of the vehicle.

[0178] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture an image outside the vehicle and receives the captured image. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for a person, a car, an obstacle, a sign, or characters on a road surface, based on the received image.

[0179] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal according to the amount of light received. The imaging unit 12031 can output the electrical signal as an image, or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0180] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing.

[0181] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, the steering mechanism, or the braking device based on the information inside and outside the vehicle acquired by the outside-of-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output a control command to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane departure warning, etc.

[0182] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on the driver's operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle acquired by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0183] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside-vehicle information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside-vehicle information detection unit 12030, and perform cooperative control for the purpose of preventing glare, such as switching from high beams to low beams.

[0184] The audio / image output unit 12052 transmits at least one output signal of audio and image to an output device capable of visually or audibly notifying information to passengers in the vehicle or the outside of the vehicle. In the example of Fig. 19, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as the output device. The display unit 12062 may include at least one of an on-board display and a head-up display, for example.

[0185] FIG. 20 is a diagram showing an example of the installation position of the imaging unit 12031.

[0186] In FIG. 20, a vehicle 12100 has imaging units 12101, 12102, 12103, 12104, and 12105 as an imaging unit 12031.

[0187] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided at positions such as the front nose, side mirrors, rear bumper, back door, and the upper part of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided at the front nose and the imaging unit 12105 provided at the upper part of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided at the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided at the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The images of the front acquired by the imaging units 12101 and 12105 are mainly used to detect a preceding vehicle, a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.

[0188] 20 shows an example of the imaging ranges of the imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, an overhead image of the vehicle 12100 viewed from above is obtained by superimposing the image data captured by the imaging units 12101 to 12104.

[0189] At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera made up of a plurality of imaging elements, or may be an imaging element having pixels for detecting a phase difference.

[0190] For example, the microcomputer 12051 can extract, as a preceding vehicle, a three-dimensional object that is the closest three-dimensional object on the travel path of the vehicle 12100 and travels at a predetermined speed (for example, 0 km / h or more) in approximately the same direction as the vehicle 12100, by calculating the distance to each three-dimensional object in the imaging ranges 12111 to 12114 and the change over time of this distance (relative speed with respect to the vehicle 12100) based on the distance information obtained from the imaging units 12101 to 12104. Furthermore, the microcomputer 12051 can set a vehicle distance to be secured in advance in front of the preceding vehicle, and perform automatic brake control (including follow-up stop control) and automatic acceleration control (including follow-up start control). In this way, cooperative control can be performed for the purpose of automatic driving that travels autonomously without relying on the driver's operation.

[0191] For example, the microcomputer 12051 classifies and extracts three-dimensional object data on three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. Then, the microcomputer 12051 determines a collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0192] At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the captured images of the imaging units 12101 to 12104. The recognition of such a pedestrian is performed, for example, by a procedure of extracting feature points in the captured images of the imaging units 12101 to 12104 as infrared cameras, and a procedure of performing pattern matching processing on a series of feature points that indicate the contour of an object to determine whether or not the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the captured images of the imaging units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular contour line for emphasis on the recognized pedestrian. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating a pedestrian at a desired position.

[0193] An example of a vehicle control system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to, for example, the imaging unit 12031 among the above-described configurations. Specifically, the excessive light amount detection circuit 1 of FIG. 11 can be applied to the imaging unit 12031. By applying the technology according to the present disclosure to the imaging unit 12031, it is possible to obtain a captured image that is easier to see by suppressing the occurrence of sunspots, thereby reducing the driver's fatigue.

[0194] [12. Application examples to electronic devices] The above-described excessive light detection circuits 1, 1a can be applied to various electronic devices such as imaging devices such as digital still cameras and digital video cameras, mobile phones with imaging functions, and other devices with imaging functions.

[0195] FIG. 21 is a block diagram showing a configuration example of an imaging device as an electronic device to which the excessive light detection circuit 1, 1a according to the present disclosure is applied.

[0196] The imaging device 201 shown in FIG. 21 comprises an optical system 202, a shutter device 203, a solid-state imaging element 204, a control circuit 205, a signal processing circuit 206, a monitor 207, and a memory 208, and is capable of capturing still and moving images.

[0197] The optical system 202 is configured to have one or more lenses, and guides light from a subject (incident light) to the solid-state imaging element 204 , forming an image on the light receiving surface of the solid-state imaging element 204 .

[0198] The shutter device 203 is disposed between the optical system 202 and the solid-state imaging element 204 , and controls the light irradiation period and light blocking period for the solid-state imaging element 204 under the control of a control circuit 205 .

[0199] The solid-state imaging element 204 is configured as a package including the above-mentioned excess light amount detection circuits 1, 1a. The solid-state imaging element 204 accumulates signal charges for a certain period of time in response to light imaged on the light receiving surface via the optical system 202 and the shutter device 203. The signal charges accumulated in the solid-state imaging element 204 are transferred in accordance with a drive signal (timing signal) supplied from a control circuit 205.

[0200] The control circuit 205 outputs drive signals that control the transfer operation of the solid-state imaging element 204 and the shutter operation of the shutter device 203 to drive the solid-state imaging element 204 and the shutter device 203 .

[0201] The signal processing circuit 206 performs various signal processing on the signal charges output from the solid-state imaging element 204. An image (image data) obtained by performing the signal processing by the signal processing circuit 206 is supplied to a monitor 207 and displayed, or supplied to a memory 208 and stored (recorded).

[0202] In the imaging device 201 configured in this manner, by providing the excess light amount detection circuit 1, 1a in the solid-state imaging element 204 described above, the excess light amount can be detected with high accuracy without increasing the circuit size.

[0203] [13. Effects] The excessive light detection circuit 1, 1a includes MOS transistors Mn1, Mp1 and capacitors Ca, Cb, which are high impedance elements. The sources of the MOS transistors Mn1, Mp1 are connected to the vertical signal line VSL of the image sensor. The capacitors Ca, Cb, which are high impedance elements, are connected to the drains of the MOS transistors Mn1, Mp1. The excessive light detection circuit 1, 1a detects the potential fluctuation of the vertical signal line VSL based on a potential determined by a threshold voltage Vth1, which is the gate potential of the MOS transistors Mn1, Mp1, and outputs the potential of the junction between the drain of the MOS transistor Mn1, Mp1 and the high impedance element as a signal indicating the detection result of the excessive light. In this way, the excessive light detection circuit 1, 1a can detect the excessive light of the image sensor 100 while ensuring a wide D range and without increasing the circuit size.

[0204] The high impedance elements are the capacitors Ca and Cb. As a result, the excessive light detection circuits 1 and 1a can detect the reception of an excessive amount of light by the image sensor 100 while ensuring a wide D range with a simple configuration.

[0205] The high impedance element is a resistor. As a result, the excessive light detection circuit 1, 1a can detect the reception of an excessive amount of light by the image sensor 100 while ensuring a wide D range with a simple configuration.

[0206] The imaging element of the image sensor 100 is an electron sensor that converts incident light into electrons. The MOS transistor is an NMOS transistor Mn1. This allows the excessive light detection circuit 1 to detect the reception of an excessive amount of light by the electron sensor.

[0207] The image sensor 100 includes an imaging element that is a Hall sensor that converts incident light into holes. The MOS transistor is a PMOS transistor Mp1. This allows the excessive light detection circuit 1a to detect the reception of an excessive amount of light by the Hall sensor.

[0208] The excessive light detection circuit 1, 1a outputs a signal indicating the detection result of the excessive light to a counter 23 to which a comparator 22, which compares the potential of the vertical signal line VSL with a Ramp wave that is a predetermined reference signal, is input. The counter 23 stops counting when a signal indicating that an excessive amount of light has been received is input from the excessive light detection circuit 1, 1a. This allows the image sensor 100 to prevent the occurrence of sunspots.

[0209] The excessive light detection circuit 1, 1a outputs a signal indicating the detection result of the excessive light to a comparator 22 that compares the potential of the vertical signal line VSL with a ramp wave, which is a predetermined reference signal. When a signal indicating that an excessive amount of light has been received is input from the excessive light detection circuit 1, 1a, the comparator 22 stops comparing the potential of the vertical signal line VSL with the ramp wave. This allows the image sensor 100 to prevent the occurrence of sunspots.

[0210] When the amount of light received is excessive, the excessive light amount detection circuit 1, 1a outputs a dummy potential signal to the comparator instead of the potential of the vertical signal line VSL. For example, when the excessive light amount detection circuit 1, 1a detects the reception of an excessive amount of light, it outputs a charge e generated by photoelectric conversion to the positive terminal of the comparator 22 instead of the potential of the vertical signal line VSL. - In this case, the image sensor 100 outputs a dummy potential signal that corresponds to the case where high luminance light whose intensity does not exceed Qs is received. This allows the image sensor 100 to prevent the occurrence of sunspots.

[0211] The light receiving element 110 also has an element substrate 30 and a readout circuit substrate 40. The element substrate 30 is provided with a photoelectric conversion unit of the image sensor. The readout circuit substrate 40 has an excessive light detection circuit 1, 1a. The excessive light detection circuit 1, 1a includes MOS transistors Mn1, Mp1 and capacitors Ca, Cb, which are high impedance elements. The MOS transistors Mn1, Mp1 have their sources connected to the vertical signal line VSL of the image sensor. The capacitors Ca, Cb, which are high impedance elements, are connected to the drains of the MOS transistors Mn1, Mp1. This allows the excessive light detection circuit 1, 1a to detect the excessive light of the image sensor 100 while ensuring a wide D range and without increasing the circuit size.

[0212] It should be noted that the effects described in this specification are merely examples and are not limiting, and other effects may also be obtained.

[0213] The present technology can also be configured as follows. (1) a MOS (Metal Oxide Semiconductor) transistor whose source is connected to a vertical signal line of the image sensor; a high impedance element connected to the drain of the MOS transistor; A potential fluctuation of the vertical signal line is detected based on a potential determined by a gate potential of the MOS transistor, and a potential at a junction between the drain of the MOS transistor and the high impedance element is output as a signal indicating a detection result of an amount of excess light. Excessive light detection circuit. (2) The high impedance element is It is a capacitor The excessive light detection circuit according to (1) above. (3) The high impedance element is Resistance The excessive light detection circuit according to (1) above. (4) The imaging element of the image sensor is It is an electron sensor that converts incident light into electrons. The MOS transistor is N-channel MOS transistor The excessive light detection circuit according to any one of (1) to (3). (5) The imaging element of the image sensor is It is a Hall sensor that converts incident light into holes. The MOS transistor is It is a P-channel MOS transistor. The excessive light detection circuit according to any one of (1) to (3). (6) A comparator compares the potential of the vertical signal line with a predetermined reference signal, and outputs a signal indicating the detection result of the amount of excess light to a counter to which the comparator outputs an output signal. The excessive light detection circuit according to any one of (1) to (5) above. (7) A signal indicating the detection result of the amount of excess light is output to a comparator that compares the potential of the vertical signal line with a predetermined reference signal. The excessive light detection circuit according to any one of (1) to (5) above. (8) When the amount of light is excessive, a dummy potential signal is output to the comparator in place of the potential of the vertical signal line. The excessive light detection circuit according to (7) above. (9) an element substrate on which a photoelectric conversion unit is provided; A circuit board, The circuit board includes: a MOS (Metal Oxide Semiconductor) transistor having a source connected to a vertical signal line of the photoelectric conversion unit; an excessive light amount detection circuit including a high impedance element connected to the drain of the MOS transistor; A light receiving element having the same. (10) The circuit board includes: a transfer transistor having a source connected to the photoelectric conversion unit; a reset transistor having a source connected to the drain of the transfer transistor; an amplifier transistor whose gate is connected to the drain of the transfer transistor; The light receiving element according to (9) above, (11) A selection transistor whose drain is connected to the source of the amplification transistor The light receiving element according to (10) above, (12) The vertical signal line is connected to the source of the selection transistor. The light receiving element according to (11) above. (13) The source of the selection transistor is electrically connected to the source of the MOS transistor. The light receiving element according to (12) above. (14) A comparator connected to the excessive light amount detection circuit The light-receiving element according to any one of (9) to (13) above, (15) A counter connected to the comparator The light receiving element according to (14) above, (16) An optical system; a photoelectric conversion unit that performs photoelectric conversion on the light incident via the optical system; a signal processing circuit that processes a signal charge photoelectrically converted by the photoelectric conversion unit; an overlight detection circuit including a MOS (Metal Oxide Semiconductor) transistor having a source connected to a vertical signal line of the photoelectric conversion unit and a high impedance element connected to a drain of the MOS transistor; An electronic device having the [Explanation of symbols]

[0214] 1,1a Excessive light detection circuit 100 Image Sensor 10 Pixel section 11 AD conversion circuit 12 Imaging unit 21 DAC 22 Comparator 23 Counter 24 PLL Mn1 NMOS transistor Mp1 PMOS transistor Ca, Cb capacitor

Claims

1. a MOS (Metal Oxide Semiconductor) transistor having a source connected to a vertical signal line of the image sensor; a high impedance element connected to the drain of the MOS transistor; A potential fluctuation of the vertical signal line is detected based on a potential determined by a gate potential of the MOS transistor, and a potential at a junction between the drain of the MOS transistor and the high impedance element is output as a signal indicating a detection result of an amount of excess light. Excessive light detection circuit.

2. The high impedance element is It is a capacitor 2. The excessive light detection circuit according to claim 1.

3. The high impedance element is Resistance 2. The excessive light detection circuit according to claim 1.

4. The imaging element of the image sensor is It is an electron sensor that converts incident light into electrons. The MOS transistor is N-channel MOS transistor 2. The excessive light detection circuit according to claim 1.

5. The imaging element of the image sensor is It is a Hall sensor that converts incident light into holes. The MOS transistor is It is a P-channel MOS transistor.

2. The excessive light detection circuit according to claim 1.

6. A signal indicating the detection result of the amount of excess light is output to a counter to which an output signal of a comparator that compares the potential of the vertical signal line with a predetermined reference signal is input.

2. The excessive light detection circuit according to claim 1.

7. A signal indicating the detection result of the amount of excess light is output to a comparator that compares the potential of the vertical signal line with a predetermined reference signal.

2. The excessive light detection circuit according to claim 1.

8. When the amount of light is excessive, a dummy potential signal is output to the comparator in place of the potential of the vertical signal line.

8. The excessive light detection circuit according to claim 7.

9. an element substrate on which a photoelectric conversion unit is provided; A circuit board, The circuit board includes: a MOS (Metal Oxide Semiconductor) transistor having a source connected to a vertical signal line of the photoelectric conversion unit; an overlight detection circuit including a high impedance element connected to the drain of the MOS transistor; The excessive light amount detection circuit includes: A potential fluctuation of the vertical signal line is detected based on a potential determined by a gate potential of the MOS transistor, and a potential at a junction between the drain of the MOS transistor and the high impedance element is output as a signal indicating a detection result of an amount of excess light. Photodetector.

10. The circuit board includes: a transfer transistor having a source connected to the photoelectric conversion unit; a reset transistor having a source connected to the drain of the transfer transistor; an amplifier transistor whose gate is connected to the drain of the transfer transistor; The light receiving element according to claim 9 ,

11. A selection transistor whose drain is connected to the source of the amplification transistor The light receiving element according to claim 10 ,

12. The vertical signal line is connected to the source of the selection transistor. The light receiving element according to claim 11.

13. The source of the selection transistor is electrically connected to the source of the MOS transistor. The light receiving element according to claim 12.

14. A comparator connected to the excessive light amount detection circuit The light receiving element according to claim 9 ,

15. A counter connected to the comparator The light receiving element according to claim 14 ,

16. An optical system; a photoelectric conversion unit that performs photoelectric conversion on the light incident via the optical system; a signal processing circuit that processes a signal charge photoelectrically converted by the photoelectric conversion unit; a MOS (Metal Oxide Semiconductor) transistor having a source connected to a vertical signal line of the photoelectric conversion unit, and an overlight detection circuit including a high impedance element connected to a drain of the MOS transistor; The excessive light amount detection circuit includes: A potential fluctuation of the vertical signal line is detected based on a potential determined by a gate potential of the MOS transistor, and a potential at a junction between the drain of the MOS transistor and the high impedance element is output as a signal indicating a detection result of an amount of excess light. electronic equipment.

Images