Light emitting module, method for manufacturing the light emitting module, and display device

Abstract

The present application discloses a light-emitting module, a manufacturing method for the light-emitting module, and a display device, the light-emitting module including a plurality of light-emitting elements arranged at intervals, each of which has a thickness of 15 μm or less, a filling layer filled between adjacent light-emitting elements, a wiring layer formed on the plurality of light-emitting elements and used for electrically connecting to the light-emitting elements, and a conductive pad formed on a side of the wiring layer away from the light-emitting elements and electrically connected to the wiring layer, wherein the filling layer contains a black filling component, and the particle diameter of the black filling component is 1 / 10 or less of the thickness of the light-emitting element, or the particle diameter of the black filling component is 1 μm or less.

Description

[Technical field]

[0001] The present application relates to a technical field related to semiconductors, and in particular to a light emitting module, a manufacturing method for the light emitting module, and a display device. [Background technology]

[0002] Light-emitting diodes are widely used in many fields, such as display devices, vehicle lamps, and general lighting, due to their high reliability, long life, and low power consumption. For example, light-emitting diodes are used as backlight light sources for various display devices. In order to provide effective mechanical protection for light-emitting diodes, light-emitting diodes are always packaged to form light-emitting modules, which can enhance heat dissipation, improve light extraction efficiency, and optimize luminous flux distribution. However, the reliability of the light-emitting modules obtained by conventional methods is relatively low, and how to obtain a highly reliable light-emitting module remains a challenge. Summary of the Invention

[0003] An light-emitting module according to an embodiment disclosed in the present application may include a plurality of spaced apart light-emitting elements, each having a thickness of 15 μm or less, a filling layer filled between adjacent light-emitting elements, a wiring layer formed on the plurality of light-emitting elements and used for electrically connecting to the light-emitting elements, and a conductive pad formed on a side of the wiring layer away from the light-emitting elements and electrically connected to the wiring layer, wherein the filling layer contains a black filling component, and the particle size of the black filling component is 1 / 10 or less of the thickness of the light-emitting element, or the particle size of the black filling component is 1 μm or less.

[0004] Another embodiment of a light-emitting module disclosed in the present application may include a plurality of spaced apart light-emitting elements, a wiring layer formed on the plurality of light-emitting elements and used for electrically connecting to the light-emitting elements, and a conductive pad having a thickness greater than 5 μm formed on a side of the wiring layer away from the light-emitting elements and electrically connected to the wiring layer, where the wiring layer is in direct contact with the conductive pad.

[0005] Another embodiment of a light-emitting module disclosed in the present application may include a plurality of spaced-apart light-emitting elements, a wiring layer formed on the plurality of light-emitting elements and used for electrically connecting to the light-emitting elements, and a conductive pad formed on a side of the wiring layer away from the light-emitting elements and electrically connected to the wiring layer, wherein the wiring layer has a first region and a second region, the first region is a region that vertically overlaps with the conductive pad, the second region is a region that connects the first region and the light-emitting elements, and between the first region and the second region there is a connection point between the first region and the second region, and the length of the connection point between the first region and the second region is greater than 20 μm, or the length of the connection point between the first region and the second region is 40% or more of the length of any one side of the conductive pad.

[0006] Another embodiment of the light-emitting module disclosed in the present application may include a plurality of spaced apart light-emitting elements, a filling layer filled between adjacent light-emitting elements, a wiring layer formed on the plurality of light-emitting elements and used to electrically connect to the light-emitting elements, a conductive pad formed on the side of the wiring layer away from the light-emitting elements and electrically connected to the wiring layer, and an adhesive layer located between the light-emitting elements and the filling layer.

[0007] Another embodiment of the light-emitting module disclosed in the present application may include a plurality of spaced apart light-emitting elements, a wiring layer formed on the plurality of light-emitting elements and used for electrically connecting to the light-emitting elements, a conductive pad formed on a side of the wiring layer away from the light-emitting elements and electrically connected to the wiring layer, a packaging layer located around the conductive pad, and a protective pad formed on the side of the packaging layer away from the light-emitting elements and located in an eject pin working area of ​​the light-emitting module.

[0008] Another embodiment of the light-emitting module disclosed in the present application may include a plurality of light-emitting elements arranged at intervals, a wiring layer formed on the plurality of light-emitting elements and used to electrically connect to the light-emitting elements, a conductive pad formed on the side of the wiring layer away from the light-emitting elements and electrically connected to the wiring layer, and a conductive protection layer located between the conductive pad and the wiring layer.

[0009] Another embodiment of a manufacturing method for a light-emitting module disclosed in the present application includes the steps of providing a first transparent layer, fixing a plurality of light-emitting elements arranged at intervals on a surface of the first transparent layer, forming a filling layer around the light-emitting elements, fabricating a wiring layer on the filling layer, forming a conductive pad on the wiring layer, where the conductive pad has a thickness of 5 μm or more and is in direct contact with the wiring layer, and forming a packaging layer around the conductive pad. [Brief description of the drawings]

[0010] In order to more clearly describe the technical solutions in the embodiments of the present application, the following briefly describes the drawings necessary for describing the embodiments, and it should be noted that the following drawings only illustrate some embodiments of the present application, and should not be regarded as limiting the scope, and persons skilled in the art can obtain other related drawings based on these drawings without creative work. [Figure 1] FIG. 2 is a plan view of the light-emitting module shown in the first embodiment of the present application. [Diagram 2] 2 is a cross-sectional view taken along line AA' in FIG. [Diagram 3] FIG. 4 is a cross-sectional view of a light-emitting module shown in Example 2 of the present application. [Figure 4] FIG. 4 is a cross-sectional view of a light-emitting module shown in Example 2 of the present application. [Diagram 5] FIG. 11 is a cross-sectional view of a light-emitting module shown in Example 3 of the present application. [Figure 6] 11 is a flowchart of a method for manufacturing a light-emitting module according to a fourth embodiment of the present application. [Figure 7a] 11A to 11C are cross-sectional views of each manufacturing flow of a light-emitting module shown in Example 4 of the present application, and a plan view corresponding to a part of the manufacturing flow. [Figure 7b] 11A to 11C are cross-sectional views of each manufacturing flow of a light-emitting module shown in Example 4 of the present application, and a plan view corresponding to a part of the manufacturing flow. [Figure 8] 11A to 11C are cross-sectional views of each manufacturing flow of a light-emitting module shown in Example 4 of the present application, and a plan view corresponding to a part of the manufacturing flow. [Figure 9a] 11A to 11C are cross-sectional views of each manufacturing flow of a light-emitting module shown in Example 4 of the present application, and a plan view corresponding to a part of the manufacturing flow. [Figure 9b] 11A to 11C are cross-sectional views of each manufacturing flow of a light-emitting module shown in Example 4 of the present application, and a plan view corresponding to a part of the manufacturing flow. [Figure 9c] 11A to 11C are cross-sectional views of each manufacturing flow of a light-emitting module shown in Example 4 of the present application, and a plan view corresponding to a part of the manufacturing flow. [Figure 10a] 11A to 11C are cross-sectional views of each manufacturing flow of a light-emitting module shown in Example 4 of the present application, and a plan view corresponding to a part of the manufacturing flow. [Figure 10b] 11A to 11C are cross-sectional views of each manufacturing flow of a light-emitting module shown in Example 4 of the present application, and a plan view corresponding to a part of the manufacturing flow. [Figure 11] 11A to 11C are cross-sectional views of each manufacturing flow of a light-emitting module shown in Example 4 of the present application, and a plan view corresponding to a part of the manufacturing flow. [Figure 12] 11A to 11C are cross-sectional views of each manufacturing flow of a light-emitting module shown in Example 4 of the present application, and a plan view corresponding to a part of the manufacturing flow. [Figure 13] 11A to 11C are cross-sectional views of each manufacturing flow of a light-emitting module shown in Example 4 of the present application, and a plan view corresponding to a part of the manufacturing flow. [Figure 14] 11A to 11C are cross-sectional views of each manufacturing flow of a light-emitting module shown in Example 4 of the present application, and a plan view corresponding to a part of the manufacturing flow. [Figure 15]11A to 11C are cross-sectional views of each manufacturing flow of a light-emitting module shown in Example 4 of the present application, and a plan view corresponding to a part of the manufacturing flow. [Figure 16] FIG. 11 is a plan view of a light-emitting module according to a fifth embodiment of the present application. [Figure 17] 17 is a plan view in which the conductive pads are omitted so as to make it easier to depict the wiring layers in FIG. 16. [Figure 18] FIG. 11 is a cross-sectional view of a light-emitting module shown in Example 6 of the present application. [Figure 19] FIG. 11 is a cross-sectional view of a light-emitting module shown in Example 6 of the present application. [Figure 20] FIG. 13 is a plan view of a light-emitting module according to a seventh embodiment of the present application. [Figure 21] FIG. 13 is a plan view of a light-emitting module according to a seventh embodiment of the present application. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Hereinafter, the embodiments of the present application will be described by specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present application based on the contents disclosed in this specification. The present application can be further implemented or operated by different specific embodiments, and each detail in the present application can be modified or changed in various ways based on different perspectives and applications without departing from the spirit of the present application.

[0012] In the description of this application, the orientation or positional relationship indicated by the terms "upper" and "lower", etc., is based on the orientation or positional relationship shown in the drawings, or is the orientation or positional relationship often arranged when the product of this application is used, and is merely for the purpose of explaining and simplifying the description of this application, and does not indicate or imply that the device or element described must have a specific orientation or must be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of this application. Furthermore, the terms "first" and "second", etc. are used only for the purpose of distinguishing and explaining, and should not be understood as indicating or implying relative importance.

[0013] Example 1 FIG. 1 is a schematic plan view for explaining a light emitting module according to a first embodiment of the present application, and FIG. 2 is a cross-sectional view taken along line AA' in FIG.

[0014] 1 and 2, the light emitting module includes a plurality of light emitting elements 200 arranged at intervals and having different wavelength ranges, and a filling layer 210 is filled in the gaps between adjacent light emitting elements 200 so as to electrically isolate the adjacent light emitting elements 200. A wiring layer 300 is formed on the plurality of light emitting elements 200 and is used for electrically connecting to the light emitting elements 200. A conductive pad 500 is formed on the side of the wiring layer 300 away from the light emitting elements 200 and is electrically connected to the light emitting element 200 via the wiring layer 300.

[0015] In one embodiment, the light emitting device 200 mainly refers to a light emitting diode of the order of microns, whose width and length are in the range of 2-5 μm, 5-10 μm, 10-20 μm, 20-50 μm or 50-100 μm, and whose thickness is in the range of 2-15 μm, preferably 5-10 μm. In this embodiment, the light emitting module includes a first light emitting device 201, a second light emitting device 202 and a third light emitting device 203.

[0016] Specifically, each light emitting device 200 includes a semiconductor laminate, which includes a first semiconductor layer, a second semiconductor layer, and an active layer disposed therebetween, in which the first semiconductor layer is an N-type semiconductor layer, the second semiconductor layer is a P-type semiconductor layer, and the active layer is a multi-quantum well layer, which can provide red light, green light, or blue light emission. The N-type semiconductor layer, the multi-quantum well layer, and the P-type semiconductor layer are only basic building blocks of the light emitting device 200, and the light emitting device 200 may further include other functional structure layers that have an optimizing effect on the performance of the light emitting device 200.

[0017] The first light emitting element 201, the second light emitting element 202 and the third light emitting element 203 respectively emit light in different wavelength ranges, for example, the first light emitting element 201 emits blue light, the second light emitting element 202 emits green light, and the third light emitting element 203 emits red light. In one embodiment, the different light emitting elements 200 may have different semiconductor stack layers, thereby directly emitting light in different wavelength ranges, and the specific materials of the semiconductor stack layers are selected according to the wavelength of the emitted light, including but not limited to aluminum gallium arsenide, gallium arsenide phosphide, aluminum indium gallium phosphide, gallium nitride, indium gallium nitride, zinc selenide or gallium phosphide. In another embodiment, different light-emitting elements 200 may have the same semiconductor laminate layer, for example, the semiconductor laminate layers in the first light-emitting element 201, the second light-emitting element 202 and the third light-emitting element 203 all emit blue light, the light extraction surface of the second light-emitting element 202 is provided with a wavelength conversion layer that converts the emitted blue light into green light, and the light extraction surface of the third light-emitting element 203 is provided with a wavelength conversion layer that converts the emitted blue light into red light.

[0018] Each light-emitting element 200 further includes a first electrode and a second electrode. The semiconductor laminate has a mesa exposing the first semiconductor layer, the first electrode is formed on the mesa and electrically connected to the first semiconductor layer, and the second electrode is formed on the second semiconductor layer and electrically connected to the second semiconductor layer.

[0019] Preferably, the thickness difference between the light-emitting elements 200 is 5 μm or less, which can effectively improve the transfer yield when the light-emitting module is transferred to the transparent layer 100 described later, and improve the light extraction efficiency of the light-emitting module.

[0020] 1 and 2, in one embodiment, the light emitting module further includes a transparent layer 100, the light emitting element 200 is disposed on the transparent layer 100, and the surface of the transparent layer 100 away from the light emitting element 200 is a light extraction surface of the light emitting module, that is, all the light emitted from the light emitting element 200 is emitted to the outside through the transparent layer 100. The transparent layer 100 has a light transmittance of 60% or more in the visible light region.

[0021] In one embodiment, referring to FIG. 2, the transparent layer 100 includes a first transparent layer 1001 and a second transparent layer 1002, and the second transparent layer 1002 is located between the first transparent layer 1001 and the light-emitting element 200.

[0022] The first transparent layer 1001 may be selected from inorganic light-transmitting materials such as glass, transparent ceramics, sapphire, etc. Preferably, the light-emitting module needs to have a certain thickness for easy use by clients, so the thickness of the first transparent layer 1001 is preferably greater than 10 μm, specifically, preferably 30 μm to 50 μm, 50 μm to 100 μm, or 100 μm to 300 μm.

[0023] The second light-transmitting layer 1002 is located between the first light-transmitting layer 1001 and the light-emitting element 200 so that the light-emitting element 200 can be attached to the first light-transmitting layer 1001 through the second light-transmitting layer 1002. The second light-transmitting layer 1002 may completely cover the entire surface of the first light-transmitting layer 1001, but is not limited thereto, and may be located only below the light-emitting element 200 so that the light-emitting element 200 can be attached to the first light-transmitting layer 1001 through the second light-transmitting layer 1002.

[0024] Different light emitting elements 200 usually have different thicknesses, and by providing the second transparent layer 1002 between the first transparent layer 1001 and the light emitting element 200, the difference in height between the light extraction surfaces of the light emitting elements 200 can be reduced, and the light emitted from the side surface of the light emitting element 200 can be absorbed as much as possible by the filling layer 210 described later, thereby improving the contrast of the light emitting module. The thickness of the second transparent layer 1002 is preferably 1 μm to 15 μm or 3 μm to 10 μm. If the thickness of the second transparent layer 1002 is greater than 15 μm, it may affect the alignment accuracy of the light emitting element 200.

[0025] In an alternative embodiment, due to the high cost and complicated manufacturing process of inorganic light-transmitting materials such as sapphire, the first transparent layer 1001 may be selected from low-cost thermosetting organic materials, such as epoxy resin, silica gel, polyimide, etc. In one embodiment, the first transparent layer 1001 may be a member formed by dispersing nanoparticles such as zirconium dioxide, silicon oxide, aluminum oxide, boron nitride, etc. in a light-transmitting organic material such as epoxy resin, silica gel, polyimide, etc., where the nanoparticles such as zirconium dioxide, silicon oxide, aluminum oxide, boron nitride, etc. can improve the strength of the first transparent layer 1001. In addition, the contrast of the light-emitting module can be adjusted by adjusting the content of the nanoparticles such as zirconia, silica, alumina, boron nitride, etc. In one embodiment, when the first transparent layer 1001 is a thermosetting organic material, the second transparent layer 1002 may be ignored.

[0026] 1 and 2, in an embodiment, the light emitting module further includes a filler layer 210, which is filled between adjacent light emitting elements 200 or around the sidewalls of the light emitting elements 200, and can prevent color mixing or light interference between adjacent light emitting elements 200, thereby improving the contrast of the light emitting module. The filler layer 210 is provided as a black rubber layer that absorbs light.

[0027] The thickness range of the light emitting element 200 is preferably 2 to 15 μm, and the pitch between adjacent light emitting elements 200 is less than 50 μm, so that the filling layer 210 is preferably cured using a material with high fluidity. The particle size of the black filling component filled in the filling layer 210 is preferably 1 / 10 or less of the thickness of the light emitting element 200, which can avoid the problem that the particle size of the black filling component is too large, resulting in poor coverage effect of the filling layer 210 on the light emitting element 200 and further affecting the contrast of the light emitting module. Specifically, the filling layer 210 may be a member formed by dispersing black filling components with a particle size of 1 μm or less in a transparent or semi-transparent material such as silica gel, epoxy resin, polyimide, low-temperature glass, polysiloxane, polysilazane, etc., and the black filling component in the filling layer 210 includes, but is not limited to, carbon black, titanium nitride, iron oxide, iron oxide black, iron powder, etc. The particle size range of the black filler component is preferably 10 to 100 nm, alternatively 100 to 200 nm, alternatively 200 to 300 nm, alternatively 300 to 500 nm. The filler layer 210 may use a black dye.

[0028] The filling layer 210 covers at least 50% or more of the sidewalls of the light-emitting element 200 close to the light extraction surface, and preferably covers all the sidewalls of the light-emitting element 200, which can prevent color mixing or light interference between adjacent light-emitting elements 200, thereby improving the contrast of the light-emitting module. As an alternative embodiment, the thickness of the filling layer 210 can be greater than the thickness of the light-emitting element 200, which can prevent light interference caused by light leakage at the bottom of the light-emitting element 200. The thickness of the filling layer 210 is preferably less than 15 μm.

[0029] 1 and 2, in one embodiment, a wiring layer 300 is formed on a plurality of light-emitting elements 200 and is used to electrically connect to the light-emitting elements 200. The wiring layer 300 includes a plurality of wires, and an insulating layer 330 is filled around the wiring layer to electrically isolate adjacent wires.

[0030] The wiring layer 300 includes a first sub-wiring 301, a second sub-wiring 302, a third sub-wiring 303 and a fourth sub-wiring 304, among which the first sub-wiring 301 is a common wiring, the first electrodes of the first light-emitting element 201, the second light-emitting element 202 and the third light-emitting element 203 are commonly connected to the first sub-wiring 301, the second electrode of the first light-emitting element 201 is connected to the second sub-wiring 302, the second electrode of the second light-emitting element 202 is connected to the third sub-wiring 303, and the second electrode of the third light-emitting element 203 is connected to the fourth sub-wiring 304. The wiring layer 300 may be formed collectively on the filling layer 210.

[0031] Alternatively, the first sub-wiring 301 serves as a common wiring, and the second electrodes of the first light-emitting element 201, the second light-emitting element 202, and the third light-emitting element 203 are commonly connected to the first sub-wiring 301, the first electrode of the first light-emitting element 201 is connected to the second sub-wiring 302, the first electrode of the second light-emitting element 202 is connected to the third sub-wiring 303, and the first electrode of the third light-emitting element 203 is connected to the fourth sub-wiring 304. The wiring layer 300 may be formed collectively on the filling layer 210.

[0032] The wiring layer 300 has opposing upper and lower surfaces, of which the lower surface of the wiring layer 300 is in contact with the filling layer 210 and the light emitting element 200 , and the upper surface of the wiring layer 300 is used to form the insulating layer 330 .

[0033] The wiring layer 300 may be a single layer or a multilayer made of at least one material of titanium, copper, chromium, nickel, gold, platinum, aluminum, titanium nitride, tantalum nitride, or tantalum, etc. In this embodiment, the wiring layer 300 may include a first layer 310 and a second layer 320, where the first layer 310 is in direct contact with the light-emitting element 200, and the second layer 320 is formed on the first layer 310. The first layer 310 is used to attach the second layer 320 on the light-emitting element 200 and the filling layer 210, and the second layer 320 mainly performs a conductive function. The material of the first layer 310 includes, but is not limited to, one or more of titanium, nickel, titanium nitride, tantalum nitride, or tantalum, and the material of the second layer 320 includes, but is not limited to, one or more of copper, aluminum, or gold. The wiring layer 300 may be manufactured by sputtering, evaporation, etc.

[0034] Preferably, the thickness of the wiring layer 300 is preferably 50 nm to 1000 nm, where the thickness of the first layer 310 is preferably 10 nm to 200 nm, and the thickness of the second layer 320 is preferably 200 nm to 800 nm, and the thickness of the first layer 310 is preferably smaller than the thickness of the second layer 320.

[0035] In one embodiment, referring to FIGS. 1 and 2, the conductive pad 500 is formed on the side of the wiring layer 300 away from the light emitting element 200 and is electrically connected to the light emitting element 200 via the wiring layer 300 .

[0036] The conductive pad 500 includes a first pad 501, a second pad 502, a third pad 503 and a fourth pad 504. The first pad 501 is a common pad, and the first electrodes of the first light-emitting element 201, the second light-emitting element 202 and the third light-emitting element 203 are jointly connected to the first pad 501 via the first sub-wiring 301, the second electrode of the first light-emitting element 201 is connected to the second pad 502 via the second sub-wiring 302, the second electrode of the second light-emitting element 202 is connected to the third pad 503 via the third sub-wiring 303, and the second electrode of the third light-emitting element 203 is connected to the fourth pad 504 via the fourth sub-wiring 304.

[0037] Alternatively, the first pad 501 is a common pad, and the second electrodes of the first light-emitting element 201, the second light-emitting element 202 and the third light-emitting element 203 are all connected to the first pad 501 via the first sub-wiring 301, the first electrode of the first light-emitting element 201 is connected to the second pad 502 via the second sub-wiring 302, the first electrode of the second light-emitting element 202 is connected to the third pad 503 via the third sub-wiring 303, and the first electrode of the third light-emitting element 203 is connected to the fourth pad 504 via the fourth sub-wiring 304.

[0038] In one embodiment, the conductive pad 500 includes a conductive layer 510, which may be a single layer or a multilayer made of at least one material of titanium, copper, gold, platinum, etc., and has a thickness of preferably 10 to 50 μm, such as 20 μm, 30 μm, 40 μm.

[0039] In an alternative embodiment, the conductive pad 500 includes a conductive layer 510 and a protective layer 530 sequentially formed on the wiring layer 300. Before the light emitting module is mounted on the display device, the protective layer 530 completely covers the upper surface of the conductive layer 510, effectively preventing the conductive layer 510 from being oxidized and improving the stability of the light emitting module, and the protective layer 530 is destroyed or removed when the light emitting module is mounted on the display device. The protective layer 530 does not affect the bonding and conductivity of the conductive pad 500, and its thickness is preferably 25 to 50 nm.

[0040] The protective layer 530 may be made of a metal material such as gold, platinum, etc. In the process of mounting the light emitting module to the display device, a welding material is used to weld the conductive pad 500 and the circuit board at a preset temperature. In the welding process, the welding material will flow and cause deformation, and the deformation of the welding material may destroy the integrity of the protective layer 530 made of a metal material such as gold, platinum, etc.

[0041] Alternatively, the protective layer 530 may be an organic material such as OSP, and in the process of mounting the light emitting module to the display device, a welding material is used to weld the conductive pad 500 to the circuit board at a preset temperature, and the organic material such as OSP is dissolved and removed at the temperature.

[0042] Preferably, an adhesive layer 520 is further provided between the conductive layer 510 and the protective layer 530. The adhesive layer 520 may be a single layer or a multilayer made of at least one material selected from the group consisting of chromium, titanium, nickel, tantalum nitride, tantalum, etc. The thickness of the adhesive layer 520 is preferably 3 to 5 μm.

[0043] 2, in one embodiment, a package layer 600 is filled around the conductive pad 500 to electrically isolate adjacent subpads. The package layer 600 is provided as a light-absorbing rubber layer, specifically, a member formed by dispersing black filler components in a transparent or translucent material such as silica gel, epoxy resin, polyimide, low-temperature glass, polysiloxane, polysilazane, etc., and the black filler components in the package layer 600 include, but are not limited to, carbon black, titanium nitride, iron oxide, iron oxide black, iron powder, etc.

[0044] Since the thickness of the light emitting device 200 and the wiring layer 300 are thin, the package layer 600 preferably has a certain thickness to protect the light emitting device 200 and the wiring layer 300 from damage caused by external factors, and the thickness of the package layer 600 is preferably greater than 20 μm, in which case the thickness of the conductive pad 500 is also greater than 20 μm. Doping particles with a particle size greater than 1 μm are added to the package layer 600, such as silica, which can improve the mechanical properties of the package layer 600 and thus better protect the light emitting device 200 and the wiring layer 300.

[0045] Preferably, the surface of the package layer 600 remote from the wiring layer 300 is flush with the surface of the conductive layer 510 of the conductive pad 500 remote from the wiring layer 300 .

[0046] Preferably, the conductive pad 500 has a thickness of 5 μm or more, and may be formed using a plating method.

[0047] 2, in one embodiment, the insulating layer 330 is located on the upper surface of the wiring layer 300 and fills around the wiring in the wiring layer 300. The insulating layer 330 has through holes located above the wiring layer 300 for forming the conductive pads 500. The number of the through holes is the same as the number of the conductive pads 500, i.e., one conductive pad 500 corresponds to one through hole.

[0048] The insulating layer 330 may be a member formed of a material such as epoxy resin, polysiloxane, or photoresist, and can prevent the wiring layer 300 from being oxidized, electrically isolate different wirings, and prevent leakage current failure in the light emitting module.

[0049] A seed layer 700 is provided on the upper surface of the wiring layer 300, and the seed layer 700 is conductive to manufacture the conductive pad 500 by electroplating. The seed layer 700 may be a single layer or a multilayer made of at least one material of titanium, copper, gold, and platinum. In this embodiment, the seed layer 700 is preferably a Ti / Cu laminate, and its thickness is preferably 100-2000 nm.

[0050] Example 2 3 is a schematic cross-sectional view illustrating a light emitting module according to Example 2 of the present application. Unlike Example 1, the conductive pad 500 includes a conductive layer 510, an adhesive layer 520, and a eutectic layer 540, which are sequentially formed on the wiring layer 300.

[0051] The conductive layer 510 may be a single layer or a multilayer made of at least one material selected from the group consisting of titanium, copper, gold, platinum, etc., and its thickness is preferably 10 to 50 μm, for example, 20 μm, 30 μm, or 40 μm.

[0052] The adhesion layer 520 is located between the conductive layer 510 and the protective layer 530, which may be a single layer or multiple layers made of at least one material of chromium, titanium, nickel, tantalum nitride, tantalum, etc. The thickness of the adhesion layer 520 is preferably 3-5 μm.

[0053] The eutectic layer 540 may be a single layer or multiple layers made of at least one material of Sn, SnAg, AuSn, etc., and its thickness is 10-50 nm. The eutectic layer 540 can effectively improve the bonding strength when the light emitting module is applied to a circuit board, and there is no need to reprint solder paste or only a small amount of solder paste is required when applying, improving the convenience of use for clients.

[0054] Preferably, the surface of the package layer 600 away from the wiring layer 300 is flush with the surface of the eutectic layer 540 in the conductive pad 500 away from the wiring layer 300, so that the surface of the light-emitting module is flat, which is convenient for client use.

[0055] 4, the conductive pad 500 further includes a protective layer 530 disposed on the eutectic layer 540. Before the light emitting module is mounted on the display device, the protective layer 530 completely covers the upper surfaces of the eutectic layer 540 and the conductive layer 510, effectively preventing the eutectic layer 540 and the conductive layer 510 from being oxidized, and improving the stability of the light emitting module, and the protective layer 530 is destroyed or removed when the light emitting module is mounted on the display device. The protective layer 530 does not affect the bonding property or conductivity of the conductive pad 500, and the thickness thereof is preferably 25 to 50 nm.

[0056] The protective layer 530 may be made of a metal material such as gold, platinum, etc. In the process of mounting the light emitting module to the display device, a welding material is used to weld the conductive pad 500 and the circuit board at a preset temperature. In the welding process, the welding material will flow and cause deformation, and the deformation of the welding material may destroy the integrity of the protective layer 530 made of a metal material such as gold, platinum, etc.

[0057] Alternatively, the protective layer 530 may be an organic material such as OSP, and in the process of mounting the light emitting module to the display device, a welding material is used to weld the conductive pad 500 to the circuit board at a preset temperature, and the organic material such as OSP is dissolved and removed at the temperature.

[0058] Example 3 FIG. 5 is a schematic cross-sectional view for explaining a light emitting module according to a third embodiment of the present invention.

[0059] Unlike Example 1 or Example 2, a conductive protection layer 400 is provided on the wiring layer 300, and the conductive protection layer 400 is located between the wiring layer 300 and the conductive pad 500, and more specifically, is preferably located between the wiring layer 300 and the seed layer 700. Before forming the seed layer 700 or the conductive pad 500, the wiring layer 300 is always exposed and is easily oxidized by air, so the conductive protection layer 400 is provided between the conductive pad 500 and the wiring layer 300, and the conductive protection layer 400 is used to protect the wiring layer 300 in advance, thereby preventing the parts of the wiring layer 300 to be connected to the seed layer 700 or the conductive pad 500 from being oxidized by exposure to air, and further providing the conductive pad 500 with good bonding and conductivity.

[0060] 5, a conductive protection layer 400 is formed on a portion of the wiring layer 300 for connection with the conductive pad 500. The conductive protection layer 400 is provided in a through hole in the insulating layer 330, but is not limited thereto, and in other embodiments, the conductive protection layer 400 may completely cover the wiring layer 300.

[0061] The seed layer 400 may be a single layer or a multilayer made of at least one material of nickel, gold, platinum, titanium, etc. In this embodiment, the conductive protective layer 400 is preferably a Ni / Au laminate. The thickness of the conductive protective layer 400 is preferably 1-10 nm, or 10-100 nm, or 100-2000 nm. The conductive protective layer 400 may further be manufactured by sputtering, deposition, etc.

[0062] Preferably, the vertical projection area of ​​the conductive protection layer 400 is equal to or larger than the vertical projection area of ​​the lower surface of the conductive pad 500, so that the entire lower surface of the conductive pad 500 contacts the wiring layer 300 via the conductive protection layer 400, and the wiring layer 300 connected to the conductive pad 500 can be prevented from being oxidized, thereby effectively improving the connectivity and conductivity of the conductive pad 500. If the vertical projection area of ​​the conductive protection layer 400 is smaller than the vertical projection area of ​​the lower surface of the conductive pad 500, the wiring layer 300 that is not covered by the conductive protection layer 400 and needs to be connected to the conductive pad 500 will be oxidized, and the conductive pad 500 will still be prone to falling off or poor contact with the wiring layer 300, and the effect of improving the connectivity and conductivity of the conductive pad 500 cannot be achieved.

[0063] Example 4 This embodiment discloses a method for manufacturing a light emitting module. Fig. 6 is a schematic cross-sectional view for explaining a method for manufacturing a light emitting module according to a fourth embodiment of the present invention.

[0064] The manufacturing method includes: Providing a first transparent layer 1001; Fixing a plurality of spaced apart light emitting elements 200 on a surface of a first transparent layer 1001; forming a filler layer 210 around the light emitting device 200; forming a wiring layer 300 in the filling layer 210; forming a conductive pad 500 on the wiring layer 300, the conductive pad 500 having a thickness of 5 μm or more and in direct contact with the wiring layer 300; filling the package layer 600 around the conductive pads 500; and performing a singulation process to form a single light emitting module.

[0065] A detailed explanation will be given below with reference to the drawings.

[0066] In S1, a first transparent layer 1001 is provided, and the first transparent layer 1001 may be provided with reference to Example 1. The first transparent layer 1001 includes a first surface and a second surface, of which the first surface is a light extraction surface.

[0067] In S2, as shown in Fig. 7a and Fig. 7b, Fig. 7b is a cross-sectional view of line B-B' in Fig. 7a, a series of arrays of light-emitting elements 200 are fixed on the second surface of the first transparent layer 1001. The array includes a series of light-emitting units, each of which corresponds to a pixel point and includes at least three light-emitting elements 200 that emit light in different wavelength ranges. In a preferred embodiment, the first transparent layer 1001 selects a sapphire substrate, and the light-emitting elements 200 are bonded to the first transparent layer 1001 through a second transparent layer 1002. The second transparent layer 1002 may be provided with reference to embodiment 1. The second transparent layer 1002 covers the second surface of the first transparent layer 1001.

[0068] In S3, as shown in FIG. 8, a filler layer 210 is formed around the light emitting elements 200, where the filler layer 210 is filled between adjacent light emitting elements 200 or around the sidewalls of the light emitting elements 200.

[0069] In S4, as shown in Figures 9a and 9b, Figure 9b is a cross-sectional view of line B-B' in Figure 9a, a total wiring layer 3000 is fabricated on the filling layer 210. The total wiring layer 3000 may include a plurality of unitized wiring layers 300, where the unitized wiring layers 300 are arranged in columns along a first direction X and in rows along a second direction Y, and the first direction and the second direction are perpendicular to each other. Referring to Figure 9c, Figure 9c is an enlarged schematic diagram of portion I of Figure 9b, in which the unitized wiring layer 300 includes a first sub-wiring 301, a second sub-wiring 302, a third sub-wiring 303 and a fourth sub-wiring 304, and the first light-emitting element 201 is electrically connected to the first sub-wiring 301 and the second sub-wiring 302, the second light-emitting element 202 is electrically connected to the first sub-wiring 301 and the third sub-wiring 303, and the third light-emitting element 203 is electrically connected to the first sub-wiring 301 and the fourth sub-wiring 304. Each of the sub-wirings 301 to 304 has a first region 3001, a second region 3002 and a third region 3003, of which the first region 3001 is a region that vertically overlaps with the conductive pad 500, the second region 3002 is connected to the light-emitting element 200 and the first region 3001, and the third region 3003 extends from the first region 3001 toward the edge of the light-emitting module.

[0070] The connection relationship between each unitized wiring layer will be explained by taking the wiring layer (D22) 300 in the second row and second column as an example. For example, the unitized wiring layer in the first row and first column is abbreviated as D11, the unitized wiring layer in the second row and third column is abbreviated as D23, the unitized wiring layer in the third row and fifth column is abbreviated as D35, and so on. The first sub-wiring 301 of D22 D22 is the fourth sub-wiring 304 of D12 D12 , the second sub-wiring 302 of D21 D21 and the third sub-wiring 303 of D21 D21 , and the second sub-wiring 302 of D22 is connected to D22 is the third sub-wiring 303 of D12 D12 , the fourth sub-wiring 304 of D12 D12 and the first sub-wiring 301 of D23 D23 , and the third sub-wiring 303 of D22 is connected toD22 is the second sub-wiring 302 of D32 D32 , the first sub-wiring 301 of D23 D23 and the fourth sub-wiring 304 of D23 D23 , and the fourth sub-wiring 304 of D22 is connected to D22 is the third sub-wiring 303 of D21 D21 , the first sub-wiring 301 of D32 D32 and the second sub-wiring 302 of D32 D32 The other unitized wiring layers 300 are connected in the same manner. By connecting the unitized wiring layers 300 in this manner, the total wiring layer 3000 is connected to one another.

[0071] In S5, as shown in Figures 10a and 10b, Figure 10b is a cross-sectional view taken along line B-B' in Figure 10a, and a conductive pad 500 is formed on the wiring layer 300. The conductive pad 500 is formed in the first region 3001 of the wiring layer 300 by electroplating, and the conductive pad 500 has a thickness of 5 μm or more and is in direct contact with the wiring layer 300.

[0072] In S6, as shown in FIG. 11, a package layer 600 is filled around the conductive pad 500, and the package layer 600 may be provided with reference to the first embodiment.

[0073] In S7, a singulation process is carried out to form a single light-emitting module.

[0074] 12 shows a schematic plan view of a light emitting module formed by the method, and the corresponding cross-sectional view is shown in FIG. 13. The light emitting module includes a first transparent layer 1001, a light emitting element 200, a filling layer 210, a wiring layer 300, a conductive pad 500, and a package layer 600, in which the wiring layer 300 includes a first sub-wire 301, a second sub-wire 302, a third sub-wire 303, and a fourth sub-wire 304. The first light emitting element 201 is electrically connected to the first sub-wire 301 and the second sub-wire 302, the second light emitting element 202 is electrically connected to the first sub-wire 301 and the third sub-wire 303, and the third light emitting element 203 is electrically connected to the first sub-wire 301 and the fourth sub-wire 304. Each of the sub-wirings 301 to 304 has a first region 3001, a second region 3002, and a third region 3003, of which the first region 3001 is a region that vertically overlaps with the conductive pad 500, the second region 3002 is connected to the light emitting element 200 and the first region 3001, and the third region 3003 extends from the first region 3001 toward the edge of the light emitting module. Preferably, the third region 3003 includes at least three pins 305 extending from the first region 3001 to the edge of the light emitting module, but is not limited thereto, and the third region 3003 may have a sufficient region extending to the edge of the light emitting module that is connected to three adjacent light emitting modules. In addition, the side of the pin 305 in the third region 3003 is preferably flush with the side of the package layer 600.

[0075] The first transparent layer 1001, the light emitting element 200, the filling layer 210, the conductive pad 500 and the package layer 600 may be designed with reference to the first embodiment.

[0076] In the manufacturing method described in this embodiment, before performing the singulation process, the wiring layer 300 is designed so that each unitized wiring layer 300 forms an interconnection, and thus, the conductive pads 500 can be formed by electroplating or the like at the corresponding positions of each unitized wiring layer 300 without providing a seed layer, simplifying the manufacturing process. Furthermore, in the process of manufacturing the conductive pads 500 by electroplating, the surface of the wiring layer 300 is etched using wet etching to remove the oxide layer on the surface of the wiring layer 300, so that the wiring layer 300 can be directly contacted with the conductive pads 500, and thus avoiding poor electrical coupling caused by the oxidation of the wiring layer 300.

[0077] As an alternative embodiment, as shown in FIG. 14, the package layer 600 can cover the sidewalls of the wiring layer 300 to avoid electrical failure due to oxidation of the wiring layer 300 exposed at the edge of the light emitting module.

[0078] As an alternative embodiment, the pins 305 extending to the edge of the wiring layer 300 can be partially etched as shown in FIG. 15 to avoid electrical failure due to oxidation of the wiring layer 300 exposed at the edge of the light emitting module.

[0079] Example 5 Fig. 16 shows a schematic plan view of a light-emitting module according to a fifth embodiment of the present application, and the corresponding cross-sectional view is referred to Fig. 13. Fig. 17 is a plan view in which the conductive pad 500 is omitted to facilitate the depiction of the wiring layer 300 in Fig. 16. The light-emitting module includes a first transparent layer 1001, a light-emitting element 200, a filling layer 210, a wiring layer 300, a conductive pad 500, and a package layer 600. Here, the first transparent layer 1001, the light-emitting element 200, the filling layer 210, the conductive pad 500, and the package layer 600 may be provided with reference to the first embodiment.

[0080] 16 and 17, the wiring layer 300 may include a first region 3001 and a second region 3002. The first region 3001 is a region that vertically overlaps with the conductive pad 500, and the second region 3002 is a region that connects the first region 3001 and the light-emitting element 200, and a connection point 3004 between the first region 3001 and the second region 3002 is provided. Due to the large difference in thermal expansion coefficient between the package layer 600 and the conductive pad 500, the interface between the package layer 600 and the conductive pad 500 has residual stress, and if the length H1 of the connection point 3004 between the first region and the second region is too small, the connection point 3004 between the first region 3001 and the second region 3002 is easily broken due to the residual stress causing the wiring layer in the second region 3002 to break, and the electrical connection between the conductive pad 500 and the light emitting element 200 is broken. In this embodiment, the length H1 of the connection point 3004 between the first region and the second region is preferably 20 μm or more, and it can be ensured that even if a crack occurs in the wiring layer in the second region 3002, there is still a portion in the second region 3002 that can ensure complete electrical connection with the light emitting element 200.

[0081] In one embodiment, the length H1 of the connection point 3004 between the first region and the second region accounts for 40% or more of the length H2 of any one side of the conductive pad 500, so that even if a crack occurs in the wiring layer in the second region 3002, it can be ensured that there is still a portion in the second region 3002 that can ensure complete electrical connection with the light emitting element 200. Preferably, the distance between the first region 3001 and the edge of the wiring layer 300 close to the light emitting module is 20 μm or less.

[0082] In order to facilitate the use of clients, the shape of the first pad 501 does not match the shapes of the second pad 502, the third pad 503, and the fourth pad 504, which can play a role in identification. Note that the ratio of H1 to H2 may be the ratio of the total length H1 of the connection point of the first region 3001 and the second region 3002 in the first pad 501 to the total length H2 of both sides corresponding to the first pad 501.

[0083] Example 6 FIG. 18 is a schematic cross-sectional view for explaining a light-emitting module according to a sixth embodiment of the present invention.

[0084] Unlike the first to fifth embodiments, the light emitting module further includes an insulating adhesive layer 220, which is disposed between the light emitting device 200 and the filling layer 210. Due to the low bonding strength between the filling layer 210 and the light emitting device 200, the light emitting device 200 may be separated from the filling layer 210 during use by the client, which may result in attenuation of the brightness of the light emitting module. Therefore, an adhesive layer 220 is disposed between the light emitting device 200 and the filling layer 210, and the thickness of the adhesive layer 220 is 1 μm or less, preferably 5 nm to 100 nm, 100 nm to 300 nm, or 300 nm to 600 nm. The thickness of the adhesive layer 220 is small, does not affect the structure of the light emitting module, and improves the bonding strength between the light emitting device 200 and the filling layer 210, thereby avoiding the separation between the light emitting device 200 and the filling layer 210.

[0085] Preferably, as shown in FIG. 18, the adhesive layer 220 is a continuous layer, and the adhesive layer 220 covers the top surface and sidewalls of the light-emitting element 200 and the gaps between adjacent light-emitting elements 200 while exposing the first electrode and the second electrode in the light-emitting element 200.

[0086] As an alternative embodiment, as shown in FIG. 19, the adhesive layer 220 is a discontinuous layer, and the adhesive layer 220 covers the top surfaces and sidewalls of some of the light-emitting elements 200 and the gaps between adjacent light-emitting elements 200 while exposing the first and second electrodes in the light-emitting elements 200.

[0087] In addition, the adhesive layer 220 may be left on the first electrode and the second electrode of the light-emitting element 200, and the adhesive layer 220 does not affect the electrical conductivity of the light-emitting module.

[0088] Example 7 FIG. 20 is a schematic plan view for explaining a light emitting module according to a seventh embodiment of the present invention.

[0089] Different from the first to sixth embodiments, the light emitting module further includes a protective pad 800 , which is located on the side of the package layer 600 away from the light emitting element 200 .

[0090] The protective pad 800 is located in the eject pin working area of ​​the light emitting module. The eject pin working area is an area that is covered by the range error when the eject pin works on the surface of the package layer 600 away from the light emitting element 200, and is, for example, a circular area with a radius of 300 μm or less, preferably a circular area with a radius of 150 μm or less. When the light emitting module is attached or die-bonded to the display panel, the eject pin may break through the eject pin working area and damage the light emitting element 200 below the package layer 600, which may lead to a failure of the light emitting module.

[0091] By adding a protective pad 800 to the eject pin working area of ​​the light emitting module, when the eject pin acts on the above area, it is possible to effectively prevent the eject pin from piercing or breaking through the packaging layer 600, and the packaging layer 600 still has a good protective effect on the light emitting element 200, thereby avoiding damage to the light emitting element 200 and failure of the light emitting module.

[0092] Preferably, the protective pad 800 is not electrically connected to the wiring layer 300. The protective pad 800 is formed together with the conductive pad 500 in the same process, and the material of the protective pad 800 is the same as that of the conductive pad 500. The protective pad 800 has good structural strength, and various eject pins can be selected to act on it in the subsequent bonding or die bonding process, which further improves the speed of bonding or die bonding.

[0093] 20, in one embodiment, the conductive pad 500 is arranged around the outer periphery of the protective pad 800, the side of the conductive pad 500 facing the protective pad 800 is arranged in an arc shape, and the opening of the arc faces the protective pad 800. By arranging the conductive pad 500 in the above structure, the distance between the conductive pad 500 and the protective pad 800 can be increased, and the short circuit phenomenon caused by the contact between the conductive pad 500 and the protective pad 800 can be avoided. In this embodiment, the sides of the first pad 501, the second pad 502, the third pad 503, and the fourth pad 504 facing the protective pad 800 are arranged in an arc shape, and the openings of the arcs all face the protective pad 800.

[0094] Preferably, the first pad 501, the second pad 502, the third pad 503 and the fourth pad 504 have different shapes or sizes, which makes it easy to identify the type of the conductive pad 500 and to determine the cutting position later. The total area of ​​the conductive pads 500 is preferably 20% to 70% of the area of ​​the light emitting module.

[0095] Preferably, referring to FIG. 20, the distance D between the conductive pad 500 and the edge of the light emitting module is 1 The distance D between the protective pad 800 and the edge of the light emitting module is greater than 20 μm. 2 is greater than 20 μm.

[0096] Preferably, the protective pad 800 is spaced apart from the first pad 501, the second pad 502, the third pad 503 and the fourth pad 504.

[0097] Preferably, the plurality of light-emitting elements include three types of light-emitting elements: a first light-emitting element 201, a second light-emitting element 202 and a third light-emitting element 203, and the protective pad 800 blocks at least a portion of the area of ​​the second light-emitting element 202 below it, or the protective pad 800 blocks at least the plurality of light-emitting elements 200 below it.

[0098] As an alternative embodiment, as shown in FIG. 21 , the protective pad 800 may be part of the first pad 501, the second pad 502, the third pad 503 or the fourth pad 504, and a part of the corresponding pad may be extended to the central area of ​​the light-emitting module to form the protective pad 800 to protect the eject pin working area of ​​the light-emitting module, and effectively prevent the eject pin from piercing or breaking through the package layer 600.

[0099] As can be seen from the above technical solutions, in the present application, a filling layer 210 is formed between adjacent light emitting devices 200, which is manufactured by using a material having good fluidity and curing, and the particle size of the black filling component in the filling layer 210 is less than 1 / 10 of the thickness of the light emitting device 200, which can improve the covering effect of the filling layer 210 on the light emitting device 200 and enhance the contrast of the light emitting module. A packaging layer 600 is formed around the conductive pad 500, which has a large thickness and strength and can protect the light emitting device 200 and the wiring layer 300 to avoid damage caused by external factors. Therefore, by installing different insulating structures at different positions of the light emitting module, the requirements of different positions of the light emitting module can be met at the same time, and the light emitting module can have high contrast and mechanical properties at the same time.

[0100] In addition, the conductive pad 500 includes a protective layer 530. Before the light emitting module is mounted on the display device, the protective layer 530 completely covers the upper surface of the conductive layer 510, effectively preventing the conductive layer 510 from being oxidized and improving the stability of the light emitting module. When the light emitting module is mounted on the display device, the protective layer 530 is destroyed or removed, which does not affect the bonding and conductivity of the conductive pad 500.

[0101] In addition, the conductive pad 500 further includes a eutectic layer 540, which can effectively increase the bonding strength when the light emitting module is applied, and eliminates the need to reprint solder paste when applied, thereby improving the convenience of use for clients.

[0102] Furthermore, by providing the conductive protective layer 400 between the wiring layer 300 and the conductive pad 500, the portion of the wiring layer 300 for connecting to the conductive pad 500 is effectively prevented from being oxidized, and the phenomenon in which the conductive pad 500 is easily detached or poor contact occurs due to oxidation of the wiring layer 300 can be improved, thereby improving the bonding and conductivity of the conductive pad 500.

[0103] Furthermore, by adding a protective pad 800 to the eject pin working area of ​​the light emitting module, when the eject pin acts on the above area, it can effectively prevent the eject pin from piercing or breaking through the package layer 600, and the package layer 600 still has a good protective effect on the light emitting device 200, thereby avoiding damage to the light emitting device 200 and failure of the light emitting module. Here, the protective pad 800 is formed together with the conductive pad 500 in the same process, and the material of the protective pad 800 is the same as that of the conductive pad 500. The protective pad 800 has good structural strength, and various eject pins can be selected to act on it in the subsequent bonding or die bonding process, which further improves the speed of bonding or die bonding.

[0104] It should be noted that the above is only a preferred embodiment of the present application, and a person skilled in the art may make some further improvements and substitutions without departing from the technical principles of the present application, and these improvements and substitutions should also be considered as within the protection scope of the present application. [Explanation of symbols]

[0105] 100...transparent layer, 1001...first transparent layer, 1002...second transparent layer, 200...light emitting element, 201...first light emitting element, 202...second light emitting element, 203...third light emitting element, 210...filling layer, 300...wiring layer, ...3000...total wiring layer, 3001...first region, 3002...second region, 3003...third region, 3004...connection point between first region and second region, 301...first sub-wiring, 302...second sub-wiring sub-wiring, 303...third sub-wiring, 304...fourth sub-wiring, 310...first layer, 320...second layer, 330...insulating layer, 400...conductive protection layer, 500...conductive pad, 501...first pad, 502...second pad, 503...third pad, 504...fourth pad, 510...conductive layer, 520...adhesion layer, 530...protection layer, 540...eutectic layer, 600...packaging layer, 700...seed layer, 800...protection pad.

Claims

1. a plurality of spaced apart light emitting elements, each of said light emitting elements having a thickness of 15 μm or less; A filling layer is filled between adjacent light emitting elements; a wiring layer formed on the plurality of light emitting elements and used for electrically connecting the light emitting elements; a conductive pad formed on a side of the wiring layer away from the light emitting element and electrically connected to the wiring layer; Wherein, the filling layer contains a black filling component, and the particle size of the black filling component is 1 / 10 or less of the thickness of the light emitting device, or the particle size of the black filling component is 1 μm or less; a light-emitting module characterized in that the wiring layer has a first region and a second region, the first region vertically overlapping the conductive pad, the second region connecting the first region and the light-emitting element, and a connection point between the first region and the second region, the connection point between the first region and the second region being longer than 20 μm, or the length of the connection point between the first region and the second region being 40% or more of the length of any one side of the conductive pad.

2. 2. The light emitting module according to claim 1, wherein the particle size of the black filler component of the filler layer is 10-100 nm, or 100-200 nm, or 200-300 nm, or 300 nm-500 nm.

3. 2. The light emitting module according to claim 1, wherein the black filler component of the filler layer comprises at least one of carbon black, titanium nitride, iron oxide, iron tetroxide, or iron powder.

4. 2. The light-emitting module according to claim 1, wherein the filling layer has a thickness of 15 [mu]m or less.

5. 2. The light-emitting module according to claim 1, wherein the filling layer covers at least 50% or more of a thickness of a side wall close to a light extraction surface of the light-emitting element.

6. 2. The light-emitting module according to claim 1, wherein the pitch between adjacent light-emitting elements is less than 50 μm.

7. 2. The light emitting module according to claim 1, further comprising a packaging layer, the packaging layer being formed around the conductive pad, and the thickness of the packaging layer being greater than 20 μm.

8. 8. The light emitting module according to claim 7, wherein the packaging layer contains doped particles, and the particle size of the doped particles is greater than 1 μm.

9. 2. The light-emitting module according to claim 1, further comprising a transparent layer, the light-emitting element being provided on the transparent layer, the transparent layer comprising a first transparent layer and a second transparent layer, the second transparent layer being between the first transparent layer and the light-emitting element, the thickness of the first transparent layer being greater than 10 μm, and the thickness of the second transparent layer being less than 10 μm.

10. 2. The light-emitting module of claim 1, wherein the wiring layer includes a first layer and a second layer, the material of the first layer includes one or more of titanium, nickel, titanium nitride, tantalum nitride or tantalum, and the material of the second layer includes one or more of copper, aluminum or gold.

11. 2. The light-emitting module according to claim 1, wherein the wiring layer has a thickness of 50 to 1000 nm.

12. 2. The light emitting module according to claim 1, further comprising a seed layer between the wiring layer and the conductive pad, the seed layer having a thickness of 100 to 2000 nm.

13. The light emitting module according to claim 1 , further comprising an insulating layer, the insulating layer being filled around the wiring layer.

14. The light-emitting module of claim 1, characterized in that the conductive pad includes a conductive layer, an adhesive layer and a protective layer, the conductive layer having a thickness greater than 20 μm, the adhesive layer having a thickness of 3-5 μm, and the protective layer having a thickness of 25-50 nm.

15. The light-emitting module of claim 1, characterized in that the conductive pad includes a conductive layer, an adhesive layer and a eutectic layer, the thickness of the conductive layer is greater than 20 μm, the thickness of the adhesive layer is 3-5 μm, and the thickness of the eutectic layer is 10-50 nm.

16. The light-emitting module of claim 1, characterized in that the conductive pad includes a conductive layer, an adhesive layer, a eutectic layer and a protective layer, the conductive layer having a thickness greater than 20 μm, the adhesive layer having a thickness of 3-5 μm, the eutectic layer having a thickness of 10-50 nm, and the protective layer having a thickness of 25-50 nm.

17. The light-emitting module according to any one of claims 14 to 16, characterized in that the light-emitting module further includes a packaging layer, the packaging layer being filled around the conductive pad, and a surface of the packaging layer away from the wiring layer being flush with a surface of the conductive layer away from the wiring layer.

18. 2. The light-emitting module according to claim 1, wherein the total area of ​​the conductive pads is 20% to 70% of the area of ​​the light-emitting module.

19. 2. The light-emitting module according to claim 1, wherein the conductive pad has a thickness greater than 5 [mu]m, and the wiring layer is in direct contact with the conductive pad.

20. 2. The light emitting module according to claim 1, further comprising an adhesive layer located between the light emitting element and the filling layer.

21. The light emitting module of claim 17 , further comprising a protection pad formed on a side of the package layer away from the light emitting device and located in an eject pin working area of ​​the light emitting module.

22. The light emitting module according to claim 1 , further comprising a conductive protection layer located between the conductive pad and the wiring layer.

23. A display device comprising the light-emitting module according to any one of claims 1 to 22.

Images