Method for manufacturing silicon carbide semiconductor device

Abstract

To provide a method for manufacturing a silicon carbide semiconductor device with which an efficiency percentage can be improved.SOLUTION: A method for manufacturing a silicon carbide semiconductor device includes: detecting the type, size, and position of a crystal defect in an epitaxial layer of a semiconductor wafer comprising silicon carbide; from individual semiconductor chips obtained by dividing the semiconductor wafer into pieces and having a predetermined element structure formed therein, selecting semiconductor chips not including the crystal defect and semiconductor chips including only extended defects (frank-type defect, carrot-type defect) as non-defective candidates based on the information on the position of the crystal defect in the semiconductor wafer, and removing semiconductor chips including a foreign matter defect and a triangular defect as defective chips; inspecting electrical characteristics for all the non-defective candidate semiconductor chips; and determining the specifications of all the non-defective candidate semiconductor chips based on non-defective specifications acquired in advance to select semiconductor chips to be non-defective articles.SELECTED DRAWING: Figure 4

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