Semiconductor cell structure, IGBT cell structure, semiconductor structure and its manufacturing method

Abstract

The present invention discloses a semiconductor cell structure, an IGBT cell structure, a semiconductor structure, and a method for manufacturing an IGBT cell structure, the semiconductor cell structure including an N-type drift layer (101), an N-type termination layer (116), a P-type collector layer (117), and a collector metal layer (118) that are sequentially stacked, and the semiconductor cell structure includes two spaced apart first trenches (102) and a trench-shaped insulating oxide layer (118) formed on the inner wall of the first trenches, on the N-type drift layer (101) opposite to the P-type collector layer (117). The semiconductor device includes a first trench (103), a polysilicon electrode (104) located in the trench-shaped insulating oxide layer, a second trench (105) formed on the inner wall of the first trench, a trench-shaped gate oxide layer (106) located in the second trench, a polysilicon gate (107) located in the trench-shaped gate oxide layer, a P-well region (108) located between the first trenches, and two spaced-apart floating P regions (109), and the gate oxide layer (105) in the two second trenches is adjacent to the P-well region (108).