Composition, Method for Forming a Resist Underlayer Film, and Method for Forming a Resist Pattern

JP7681568B2Active Publication Date: 2025-05-22JSR CORPORATION
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Patent Information

Application Number
JP2022508442
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2020-03-19
Filing Date
2021-03-18
Publication Date
2025-05-22
Estimated Expiration
2041-03-18

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Abstract

Provided are: a composition capable of forming a resist underlayer film having excellent heat resistance and flatness; a method for forming a resist underlayer film; and a method for forming a resist pattern. The present invention is a composition containing: a compound having an aromatic ring; and a first polymer having a first structural unit represented by formula (1) and a second structural unit represented by formula (2), wherein the content of the first polymer is 0.1-200 parts by mass with respect to 100 parts by mass of the compound. In formula (1), R1 is a hydrogen atom or a substituted or unsubstituted C1-20 monovalent hydrocarbon group. R2 is a substituted or unsubstituted C1-20 monovalent hydrocarbon group. In formula (2), R3 is a hydrogen atom or a substituted or unsubstituted C1-20 monovalent hydrocarbon group. L is a single bond or a divalent linking group. Ar is a group obtained by removing (n+1) hydrogen atoms from a substituted or unsubstituted 6 to 20-membered aromatic ring. R4 is a C1-10 monovalent hydroxyalkyl group or a hydroxy group. n is an integer of 1-8. When n is 2 or more, the R4 groups are the same or different.
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Citation Information

Patent Citations

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