Semiconductor light emitting device

Abstract

To provide a semiconductor light-emitting device which can prevent a base material from being exposed to light from a semiconductor light-emitting element.SOLUTION: A semiconductor device includes a substrate, a semiconductor light-emitting element, and a resin part. The substrate has a main surface and a rear face facing the sides opposite to each other in a thickness direction, a conductive part includes a main surface part and a rear face part, the semiconductor light-emitting element is mounted on the main surface part, the resin part includes a frame-like part and a main surface coating part, the main surface part includes a main surface first part and a main surface second part separated from one another in a first direction perpendicular to the thickness direction, the rear face part includes a rear face first part conducting with the main surface first part, and the rear face first part has a size in a second direction perpendicular to the first direction and the thickness direction larger than a size in the second direction of the semiconductor light-emitting element.SELECTED DRAWING: Figure 31

Description

[Technical field]

[0001] The present disclosure relates to semiconductor light emitting devices. [Background technology]

[0002] A semiconductor light emitting device including a semiconductor light emitting element as a light source has been proposed. Patent Document 1 discloses an example of a conventional semiconductor light emitting device. The semiconductor light emitting device disclosed in the document includes an LED chip, a metal lead on which the LED chip is mounted, and a resin part that covers a part of the lead. The resin part has a frame-shaped part that surrounds the LED chip. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2017-017256 A Summary of the Invention [Problem to be solved by the invention]

[0004] Instead of metal leads, a substrate including a base material and a conductive portion can be used as a member for mounting the LED chip. However, in such a configuration, the base material may be deteriorated by exposure to light from the LED chip. In addition, depending on the shape and arrangement of the conductive portion, problems such as a desired conductive state not being obtained (for example, the LED chip may not be properly mounted on the substrate, or the semiconductor light emitting device may not be properly mounted on an external substrate) may occur.

[0005] In view of the above circumstances, one object of the present disclosure is to provide a semiconductor light emitting device capable of suppressing deterioration of the substrate. Another object of the present disclosure is to provide a semiconductor light emitting device capable of appropriately mounting an LED chip and packaging the semiconductor light emitting device. [Means for solving the problem]

[0006] According to one aspect of the present disclosure, there is provided a semiconductor light emitting device comprising: a substrate having a base material and a conductive portion, a semiconductor light emitting element supported by the substrate, and a resin portion covering at least a portion of the substrate, wherein the base material has a main surface and a back surface facing opposite each other in a thickness direction, the conductive portion includes a main surface portion formed on the main surface, the semiconductor light emitting element is mounted on the main surface portion, and the resin portion includes a frame-shaped portion surrounding the semiconductor light emitting element as viewed in the thickness direction, and a main surface covering portion connected to the frame-shaped portion and covering a portion of the main surface of the base material that is exposed from the main surface portion.

[0007] According to one aspect of the present disclosure, there is provided a method for manufacturing a semiconductor light emitting device, the method comprising the steps of: preparing a substrate including a base having a main surface and a conductive part having a main surface part including a first main surface part and a second main surface part formed on the main surface; filling a resin material while a tip surface of a protrusion of a mold is brought into contact with a first main surface part face of the first main surface part and a second main surface part face of the second main surface part and a gap is generated between the tip surface of the protrusion and the main surface; forming a resin part including a frame-shaped part, a semiconductor light emitting element supported by the substrate formed on the main surface of the base, and a main surface covering part connected to the frame-shaped part and covering a part of the main surface of the base exposed from the main surface part by hardening the resin material; and mounting a semiconductor light emitting element in an area surrounded by the frame-shaped part.

[0008] According to one aspect of the present disclosure, a semiconductor light emitting device is provided, the semiconductor light emitting device comprising a substrate having a base material and a conductive portion, a semiconductor light emitting element supported by the substrate, and a resin portion covering at least a portion of the substrate, the substrate having a main surface and a back surface facing opposite each other in a thickness direction, a first side surface and a second side surface connecting the main surface and the back surface and positioned opposite each other in a first direction perpendicular to the thickness direction, a first groove portion recessed from the first side surface and reaching the main surface and the back surface, and a first through hole penetrating in the thickness direction, The electrical portion has a main surface portion formed on the main surface, a back surface portion formed on the back surface, and a connecting portion including at least a first groove portion connecting portion formed in the first groove portion and a first through hole connecting portion formed in the first through hole, the main surface portion has a main surface first portion on which the semiconductor light emitting element is mounted, the back surface portion has a back surface first portion, the first through hole connecting portion connects the main surface first portion and the back surface first portion, the first groove portion connecting portion connects to the back surface first portion, and the main surface first portion and the first groove portion connecting portion are spaced apart from each other.

[0009] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. [Brief description of the drawings]

[0010] [Figure 1] 2 is a plan view showing a first side surface of the semiconductor light emitting device according to the first embodiment. FIG. [Diagram 2] 2 is a bottom view showing the first side of the semiconductor light emitting device according to the first embodiment. FIG. [Diagram 3] FIG. 2 is a cross-sectional view taken along line III-III in FIG. [Figure 4] FIG. 2 is a cross-sectional view taken along line IV-IV in FIG. [Diagram 5] 2 is a cross-sectional view taken along line VV in FIG. 1. [Figure 6] FIG. 2 is a cross-sectional view taken along line VI-VI in FIG. [Figure 7] FIG. 2 is a cross-sectional view taken along line VII-VII in FIG. [Figure 8] 4 is a cross-sectional view showing a step of a method for manufacturing the semiconductor light emitting device according to the first embodiment of the first side. [Figure 9] 4 is a cross-sectional view showing a step of a method for manufacturing the semiconductor light emitting device according to the first embodiment of the first side. [Figure 10] FIG. 10 is a cross-sectional view taken along line XX in FIG. [Figure 11] 10 is a cross-sectional view taken along line XI-XI in FIG. 9. [Figure 12] 4 is a cross-sectional view showing a step of a method for manufacturing the semiconductor light emitting device according to the first embodiment of the first side. [Figure 13] 13 is a cross-sectional view taken along line XIII-XIII in FIG. 12. [Figure 14] 4 is a cross-sectional view showing a step of a method for manufacturing the semiconductor light emitting device according to the first embodiment of the first side. [Figure 15] 4 is a cross-sectional view showing a step of a method for manufacturing the semiconductor light emitting device according to the first embodiment of the first side. [Figure 16] 1 is a plan view showing a first modified example of the semiconductor light emitting device according to the first embodiment of the first side surface. FIG. [Figure 17] FIG. 17 is a cross-sectional view taken along line XVII-XVII in FIG. [Figure 18] 4 is a plan view showing a first side surface of a semiconductor light emitting device according to a second embodiment. FIG. [Figure 19] 4 is a bottom view showing the first side surface of the semiconductor light emitting device according to the second embodiment. FIG. [Figure 20] FIG. 19 is a cross-sectional view taken along the line XX-XX in FIG. 18. [Figure 21] FIG. 19 is a cross-sectional view taken along line XXI-XXI in FIG. 18. [Figure 22] FIG. 19 is a cross-sectional view taken along line XXII-XXII in FIG. 18. [Figure 23] 5 is a cross-sectional view showing a step of a method for manufacturing the semiconductor light emitting device according to the second embodiment of the first side. FIG. [Figure 24] 11 is a plan view showing a first side surface of a semiconductor light emitting device according to a third embodiment. FIG. [Diagram 25]11 is a plan view showing a first side surface of a semiconductor light emitting device according to a fourth embodiment. FIG. [Figure 26] 26 is a cross-sectional view taken along line XXVI-XXVI in FIG. 25. [Figure 27] 13 is a plan view showing a first side surface of a semiconductor light emitting device according to a fifth embodiment. FIG. [Figure 28] 13 is a bottom view showing the first side of the semiconductor light emitting device according to the fifth embodiment. FIG. [Figure 29] 28 is a cross-sectional view taken along line XXIX-XXIX in FIG. 27. [Diagram 30] 13 is a plan view showing a first side surface of a semiconductor light emitting device according to a sixth embodiment. FIG. [Diagram 31] 13 is a bottom view showing the first side surface of the semiconductor light emitting device according to the sixth embodiment. FIG. [Diagram 32] 31 is a cross-sectional view taken along line XXXII-XXXII in FIG. 30. [Diagram 33] 13 is a plan view showing a first side surface of a semiconductor light emitting device according to a seventh embodiment. FIG. [Diagram 34] FIG. 34 is a cross-sectional view taken along line XXXIV-XXXIV in FIG. 33. [Diagram 35] 4 is a plan view showing the semiconductor light emitting device according to the first embodiment based on a second side surface. FIG. [Diagram 36] 4 is a bottom view showing the semiconductor light emitting device according to the first embodiment based on the second side surface. FIG. [Figure 37] FIG. 37 is a cross-sectional view taken along line XXXVII-XXXVII in FIG. 35. [Figure 38] 36 is a cross-sectional view taken along line XXXVIII-XXXVIII in FIG. 35. [Figure 39] 39 is a cross-sectional view taken along line XXXIX-XXXIX in FIG. 35. [Diagram 40] FIG. 36 is a cross-sectional view taken along the line XL-XL in FIG. [Diagram 41] 5A to 5C are cross-sectional views illustrating a step of a method for manufacturing the semiconductor light emitting device according to the first embodiment based on the second aspect. [Diagram 42] FIG. 42 is a cross-sectional view taken along line XLII-XLII in FIG. 41. [Diagram 43]FIG. 43 is a cross-sectional view taken along line XLIII-XLIII in FIG. 41. [Diagram 44] 5A to 5C are cross-sectional views illustrating a step of a method for manufacturing the semiconductor light emitting device according to the first embodiment based on the second aspect. [Diagram 45] FIG. 45 is a cross-sectional view taken along line XLV-XLV in FIG. 44. [Diagram 46] 10 is a cross-sectional view showing a first modified example of the semiconductor light emitting device according to the first embodiment based on the second side surface. FIG. [Figure 47] 11 is a cross-sectional view showing a second modified example of the semiconductor light emitting device according to the first embodiment based on the second side surface. FIG. [Figure 48] 13 is a cross-sectional view showing a third modified example of the semiconductor light emitting device according to the first embodiment based on the second side surface. FIG. [Figure 49] 5 is a cross-sectional view showing a semiconductor light emitting device according to a second embodiment based on a second side surface. FIG. [Figure 50] 13 is a plan view showing a semiconductor light emitting device according to a third embodiment based on a second side surface. FIG. [Figure 51] 13 is a bottom view showing a semiconductor light emitting device according to a third embodiment based on a second side surface. FIG. [Figure 52] 11 is a cross-sectional view showing a semiconductor light emitting device according to a fourth embodiment based on a second side surface. FIG. [Diagram 53] 13 is a plan view showing a semiconductor light emitting device according to a fifth embodiment based on a second side surface. FIG. [Figure 54] FIG. 54 is a cross-sectional view taken along the line LIV-LIV in FIG. 53. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Hereinafter, preferred embodiments of the present disclosure will be described in detail with reference to the drawings.

[0012] The terms "first," "second," "third," etc. in this disclosure are used merely as labels and are not intended to dictate any ordering of their objects.

[0013] Figs. 1 to 15 show a semiconductor light-emitting device and a method for manufacturing the same according to a first embodiment of a first aspect of the present disclosure. The illustrated semiconductor light-emitting device A1 includes a substrate 1, a semiconductor light-emitting element 4, a resin portion 5, and a translucent resin portion 6.

[0014] Fig. 1 is a plan view showing the semiconductor light-emitting device A1. Fig. 2 is a bottom view showing the semiconductor light-emitting device A1. Fig. 3 is a cross-sectional view taken along line III-III in Fig. 1. Fig. 4 is a cross-sectional view taken along line IV-IV in Fig. 1. Fig. 5 is a cross-sectional view taken along line V-V in Fig. 1. Fig. 6 is a cross-sectional view taken along line VI-VI in Fig. 1. Fig. 7 is a cross-sectional view taken along line VII-VII in Fig. 1. Fig. 8 is a cross-sectional view showing a step of the method for manufacturing the semiconductor light-emitting device A1. Fig. 9 is a cross-sectional view showing a step of the method for manufacturing the semiconductor light-emitting device A1. Fig. 10 is a cross-sectional view taken along line X-X in Fig. 9. Fig. 11 is a cross-sectional view taken along line XI-XI in Fig. 9. Fig. 12 is a cross-sectional view showing a step of the method for manufacturing the semiconductor light-emitting device A1. Fig. 13 is a cross-sectional view taken along line XIII-XIII in Fig. 12. Fig. 14 is a cross-sectional view showing a step of the method for manufacturing the semiconductor light-emitting device A1. Fig. 15 is a cross-sectional view showing a step of the method for manufacturing the semiconductor light-emitting device A1. In Fig. 1, the translucent resin portion 6 is omitted.

[0015] As an example of the size of the semiconductor light-emitting device A1, the dimension in the x direction is about 1.6 mm, the dimension in the y direction is about 0.8 mm, and the dimension in the z direction is about 0.6 mm. Note that the size and shape of the semiconductor light-emitting device A1 are not limited to the illustrated example and can be appropriately modified.

[0016] The substrate 1 serves as a base of the semiconductor light-emitting device A1. The substrate 1 has a base material 2 and a conductive portion 3.

[0017] The substrate 2 is made of an insulating material. The insulating material constituting the substrate 2 is not limited in any way, and may be, for example, a glass epoxy resin. The substrate 2 has a main surface 21 and a back surface 22. As shown in Figs. 3 to 7, the main surface 21 and the back surface 22 face opposite each other in the z direction. In the illustrated example, the main surface 21 and the back surface 22 are flat surfaces perpendicular to the z direction. The shape of the substrate 2 is not limited to the illustrated example, and may be modified as appropriate. As shown in Figs. 1 and 2, the substrate 2 is, for example, rectangular when viewed in the z direction. The thickness of the substrate 2 is, for example, about 0.2 mm.

[0018] The substrate 2 is formed with a first conductive through hole 25 and a second conductive through hole 26. The first conductive through hole 25 penetrates the substrate 2 in the z direction. As shown in FIG. 1 and FIG. 2, in the illustrated example, two first conductive through holes 25 are provided spaced apart in the y direction. The second conductive through hole 26 penetrates the substrate 2 in the z direction. As shown in FIG. 1 and FIG. 2, in the illustrated example, two second conductive through holes 26 are provided spaced apart in the y direction. The two second conductive through holes 26 are arranged spaced apart in the x direction from the two first conductive through holes 25. The number, size, arrangement, etc. of the first conductive through holes 25 and the second conductive through holes 26 are not limited to the illustrated example and can be modified as appropriate.

[0019] The conductive portion 3 is formed on the base material 2, and provides a conductive path to the semiconductor light emitting element 4 and a portion for mounting the semiconductor light emitting element 4. The conductive portion 3 is made of a conductive material, such as a metal such as Cu, Ni, Pd, Ti, or Au. An example of the positional configuration of the conductive portion 3 is a configuration in which a Cu plating layer is formed by electrolytic plating on a base plating layer made of Ti and Cu formed on the base material 2.

[0020] In this embodiment, as shown in FIGS. 1 to 7, the conductive portion 3 includes a main surface portion 31, a back surface portion 32, a first connecting portion 33 and a second connecting portion .

[0021] The main surface portion 31 is formed on the main surface 21 of the substrate 2. In the illustrated example, the main surface portion 31 includes a first main surface portion 311, a second main surface portion 312, a first extending portion 313, and a second extending portion 314. The thickness of the main surface portion 31 is, for example, about 40 μm, although the present disclosure is not limited thereto.

[0022] The main surface first portion 311 is a portion that is electrically connected to one electrode of the semiconductor light emitting element 4. The main surface second portion 312 is disposed apart from the main surface first portion 311 in the x direction, and is a portion that is electrically connected to the other electrode of the semiconductor light emitting element 4. The shapes and sizes of the main surface first portion 311 and the main surface second portion 312 are not limited to the illustrated example, and can be appropriately modified. In the illustrated example, the main surface first portion 311 is larger than the main surface second portion 312. The main surface first portion 311 overlaps with the center of the base material 2 when viewed in the z direction. In the illustrated example, the main surface first portion 311 and the main surface second portion 312 are spaced apart from the edge of the base material 2.

[0023] As shown in FIG. 1 and FIG. 3 to FIG. 7, the main surface first portion 311 has a main surface first surface 3111 and a main surface first inclined surface 3112. The main surface first surface 3111 is a surface facing the same side as the main surface 21 in the z direction, and in the illustrated example, is a plane perpendicular to the z direction. The main surface first inclined surface 3112 is connected to the main surface first surface 3111, and is inclined so as to move away from the main surface first surface 3111 in the x direction as it approaches the main surface 21 in the z direction. In the illustrated example, the main surface first inclined surface 3112 is a convex curved surface. The main surface first inclined surface 3112 is provided in a portion of the main surface first portion 311 that faces the main surface second portion 312 in the x direction.

[0024] As shown in FIG. 1 and FIG. 3 to FIG. 7, the main surface second portion 312 has a main surface second surface 3121 and a main surface second inclined surface 3122. The main surface second surface 3121 is a surface facing the same side as the main surface 21 in the z direction, and in the illustrated example, is a plane perpendicular to the z direction. The main surface second inclined surface 3122 is connected to the main surface second surface 3121, and is inclined so as to move away from the main surface second surface 3121 in the x direction as it approaches the main surface 21 in the z direction. In the illustrated example, the main surface second inclined surface 3122 is a convex curved surface. The main surface second inclined surface 3122 is provided in a portion of the main surface second portion 312 facing the main surface first portion 311 in the x direction.

[0025] 1, the first extending portion 313 is connected to the main surface first portion 311 and reaches the edge of the base material 2 when viewed in the z direction. In the illustrated example, two first extending portions 313 are provided which are connected to the main surface first portion 311 from both sides in the y direction.

[0026] 1, the second extending portion 314 is connected to the main surface second portion 312 and reaches the edge of the base material 2 when viewed in the z direction. In the illustrated example, two second extending portions 314 are provided that are connected to the main surface second portion 312 from both sides in the y direction.

[0027] The back surface portion 32 is formed on the main surface 21 of the substrate 2. In the illustrated example, the back surface portion 32 includes a first back surface portion 321 and a second back surface portion 322. The thickness of the back surface portion 32 is, for example, about 40 μm. In addition, a surface layer of the back surface portion 32 may be formed with, for example, solder plating or Sn plating.

[0028] The back surface first portion 321 is a portion that is electrically connected to one electrode of the semiconductor light emitting element 4. The back surface second portion 322 is disposed apart from the back surface first portion 321 in the x direction, and is a portion that is electrically connected to the other electrode of the semiconductor light emitting element 4. The shapes and sizes of the back surface first portion 321 and the back surface second portion 322 are not limited to the illustrated example, and can be appropriately modified. In the illustrated example, the back surface first portion 321 is larger than the back surface second portion 322. The back surface first portion 321 overlaps with the center of the base material 2 when viewed in the z direction. In the illustrated example, the back surface first portion 321 and the back surface second portion 322 are spaced apart from the edge of the base material 2. When viewed in the z direction, the back surface first portion 321 overlaps with the main surface first portion 311, and the back surface second portion 322 overlaps with the main surface second portion 312.

[0029] The first connecting portion 33 is formed in the first through hole 25 for conductive portion of the base material 2, and electrically connects the main surface first portion 311 and the back surface first portion 321. As shown in Fig. 4 and Fig. 5, in the illustrated example, the first connecting portion 33 is formed integrally with the back surface first portion 321 by a plating technique.

[0030] The second connecting portion 34 is formed in the conductive portion second through hole 26 of the substrate 2, and electrically connects the main surface second portion 312 and the back surface second portion 322. As shown in Fig. 4, in the illustrated example, the second connecting portion 34 is formed integrally with the back surface second portion 322 by a plating technique.

[0031] The relative size, shape, and arrangement of the principal surface first portion 311 and the principal surface second portion 312 of the principal surface portion 31 and the back surface first portion 321 and the back surface second portion 322 of the back surface portion 32 are not limited to the illustrated example and can be modified as appropriate. In this embodiment, as shown in Fig. 3, the principal surface first portion 311 and the back surface first portion 321 are shifted from each other in the x direction when viewed in the z direction. The principal surface second portion 312 and the back surface second portion 322 are shifted from each other in the x direction when viewed in the z direction.

[0032] The semiconductor light emitting element 4 is a light source element of the semiconductor light emitting device A1. Examples of the semiconductor light emitting element 4 include an LED chip, a semiconductor laser element, a VCSEL element, and the like, but the present disclosure is not limited thereto. In the following description, a case where the semiconductor light emitting element 4 is an LED chip will be described as an example.

[0033] 1, 3, and 6, the semiconductor light emitting element 4 is mounted on the main surface first portion 311. In the illustrated example, the semiconductor light emitting element 4 overlaps with the center of the base material 2 when viewed in the z direction. The semiconductor light emitting element 4 has, for example, a rectangular shape when viewed in the z direction.

[0034] A first wire 481 and a second wire 482 are connected to the semiconductor light emitting element 4. The first wire 481 is connected to one electrode of the semiconductor light emitting element 4 and the first main surface portion 311. The second wire 482 is connected to the other electrode of the semiconductor light emitting element 4 and the second main surface portion 312. The material of the first wire 481 and the second wire 482 is, for example, Au, but the present disclosure is not limited to this. The semiconductor light emitting element 4 is a so-called two-wire type LED chip.

[0035] The resin portion 5 covers a part of the substrate 1. The resin constituting the resin portion 5 is made of, for example, a thermosetting resin such as an epoxy resin, but the present disclosure is not limited thereto. The resin portion 5 is preferably made of a resin that is less susceptible to degradation by light from the semiconductor light emitting element 4 than the base material 2. In this example, the resin portion 5 is made of a white epoxy resin. The z-direction dimension of the resin portion 5 is, for example, about 0.4 mm.

[0036] The resin portion 5 has a frame-shaped portion 50 and a main surface covering portion 51 .

[0037] As shown in FIG. 1 and FIG. 3 to FIG. 7, the frame-shaped portion 50 has a continuous rectangular shape when viewed in the z direction. When viewed in the z direction, the edges of the frame-shaped portion 50 and the edges of the base material 2 coincide with each other. When viewed in the z direction, the frame-shaped portion 50 surrounds the semiconductor light-emitting element 4. The frame-shaped portion 50 has a reflector 501. The reflector 501 is a surface that sandwiches the semiconductor light-emitting element 4 in the x direction and the y direction. The reflector 501 is inclined so that the farther the reflector 501 is from the main surface 21 in the z direction, the farther it is from the semiconductor light-emitting element 4 in the x direction or the y direction. In the illustrated example, the frame-shaped portion 50 covers a part of each of the main surface first portion 311 and the main surface second portion 312 of the main surface portion 31.

[0038] As shown in FIGS. 1, 3, 4, and 7, the principal surface covering portion 51 is connected to the frame portion 50 and covers a portion of the principal surface 21 that is exposed from the principal surface portion 31. In this embodiment, the principal surface covering portion 51 covers a region of the principal surface 21 that is sandwiched between the principal surface first portion 311 and the principal surface second portion 312 in the x direction. The principal surface covering portion 51 also covers the principal surface portion first inclined surface 3112 of the principal surface first portion 311 and the principal surface portion second inclined surface 3122 of the principal surface second portion 312. As shown in FIGS. 1 and 7, the principal surface first portion 311 crosses the region surrounded by the frame portion 50 in the y direction and connects portions of the frame portion 50 that are separated from each other in the y direction.

[0039] The principal surface covering portion 51 has a principal surface covering portion first surface 511. The principal surface covering portion first surface 511 is a surface facing the same side as the principal surface 21, and in the illustrated example, is a plane perpendicular to the z direction. The principal surface covering portion first surface 511 is flush with the principal surface portion first surface 3111 and the principal surface portion first inclined surface 3112.

[0040] As shown in FIGS. 3 to 7, the light-transmitting resin portion 6 fills the space surrounded by the frame portion 50 of the resin portion 5, and covers a part of the main surface portion 31, the semiconductor light-emitting element 4, the first wire 481, and the second wire 482. The light-transmitting resin portion 6 is made of a material that transmits light from the semiconductor light-emitting element 4, and is mainly composed of, for example, epoxy resin or silicone resin. The light-transmitting resin portion 6 may contain a fluorescent material. For example, when the semiconductor light-emitting element 4 emits blue light, the light-transmitting resin portion 6 may contain a fluorescent material that emits yellow light when excited by blue light. In this case, white light is emitted from the semiconductor light-emitting device A1.

[0041] Next, an example of a method for manufacturing the semiconductor light emitting device A1 will be described with reference to FIGS.

[0042] 8, a substrate 1A is prepared. The substrate 1A is a member from which a plurality of substrates 1 can be manufactured. In the following description, a case in which a plurality of semiconductor light emitting devices A1 are manufactured collectively will be described as an example, but the method for manufacturing the semiconductor light emitting devices A1 is not limited to this.

[0043] The substrate 1A has a base material 2A and a conductive portion 3A. The base material 2A becomes the above-mentioned base material 2, and has a main surface 21 and a back surface 22. The conductive portion 3A becomes the above-mentioned conductive portion 3, and has a plurality of main surface portions 31 and back surface portions 32.

[0044] As shown in FIGS. 9 to 11, the die 8 is pressed against the substrate 1A. The substrate 1A is supported from below (the side opposite to the die 8) by a support member (not shown). The die 8 has a main portion 81 and a protruding portion 82. The main portion 81 is a portion spaced apart from the substrate 1A in the z direction. The protruding portion 82 is a portion protruding from the main portion 81 in the z direction. The protruding portion 82 has an abutment surface 821. The abutment surface 821 is provided at the tip of the protruding portion 82 in the z direction. The abutment surface 821 is a flat surface perpendicular to the z direction. The abutment surface 821 abuts against the main surface portion first surface 3111 of the main surface first portion 311 and the main surface portion second surface 3121 of the main surface second portion 312. A gap is generated between the contact surface 821 and a portion of the main surface 21 located between the main surface first portion 311 and the main surface second portion 312 in the x direction.

[0045] The space between the substrate 1A and the mold 8 is filled with, for example, a liquid thermosetting resin material. Then, by hardening this resin material, the resin part 5A shown in Figures 12 and 13 is formed. The resin material filled between the main part 81 and the substrate 1A forms a part including the frame-shaped part 50. The resin material filled in the gap defined by the abutment surface 821, the main surface 21, the main surface first part 311 and the main surface second part 312 forms the main surface covering part 51.

[0046] After the resin material has hardened, the mold 8 is removed as shown in Fig. 14. Next, as shown in Fig. 15, the semiconductor light emitting element 4, the first wire 481 and the second wire 482 are bonded. Thereafter, a light-transmitting resin material is filled into the space surrounded by the frame portion 50 by, for example, a potting technique, and the material is hardened to form the above-mentioned light-transmitting resin portion 6. Thereafter, the substrate 1A and the resin portion 5A are appropriately cut to obtain the above-mentioned semiconductor light emitting device A1.

[0047] Next, the operation of the semiconductor light emitting device A1 and the method for manufacturing the semiconductor light emitting device A1 will be described.

[0048] According to this embodiment, as shown in Fig. 1, Fig. 3, Fig. 4 and Fig. 7, the portion of the main surface 21 of the base material 2 exposed from the main surface portion 31 is covered by the main surface covering portion 51. This makes it possible to prevent the base material 2 from being exposed to light from the semiconductor light emitting element 4. If it is possible to prevent the base material 2 from being exposed to light from the semiconductor light emitting element 4, it is possible to prevent, for example, the base material 2 from being deteriorated. This makes it possible to select a material that may be deteriorated by light as the material of the base material 2, which makes it possible to reduce costs, for example.

[0049] By using a material for the resin portion 5 that is less susceptible to degradation by light from the semiconductor light emitting element 4 than the material for the base material 2, degradation of the semiconductor light emitting element 4 due to light can be suppressed.

[0050] The principal surface covering portion 51 traverses the region surrounded by the frame-shaped portion 50 in the y direction, and both ends are connected to the frame-shaped portion 50. This makes it possible to prevent the principal surface covering portion 51 from being separated from the principal surface 21.

[0051] Since the principal surface covering portion first surface 511, the principal surface portion first surface 3111, and the principal surface portion second surface 3121 are flush with each other, it is possible for these to form a larger plane. This makes it possible to more efficiently reflect light from the semiconductor light emitting element 4 in the z direction, which is preferable for increasing the brightness of the semiconductor light emitting device A1.

[0052] Since the main surface first inclined surface 3112 of the main surface first portion 311 and the main surface second inclined surface 3122 of the main surface second portion 312 are covered by the main surface covering portion 51, a curved surface corresponding to the main surface first inclined surface 3112 and the main surface second inclined surface 3122 is formed in the main surface covering portion 51. This curved surface makes it possible to reduce the concentration of stress on the main surface covering portion 51.

[0053] As shown in FIG. 9 to FIG. 11, by abutting the abutment surface 821 of the protrusion 82 against the first principal surface 3111 and the second principal surface 3121, a gap can be generated between the principal surface 21 and the abutment surface 821. This gap is connected to the gap between the main portion 81 and the substrate 1. Therefore, when a resin material is filled in the gap between the main portion 81 and the substrate 1, the resin material is also filled in the gap between the principal surface 21 and the abutment surface 821. This makes it possible to form the frame-shaped portion 50 and the principal surface covering portion 51 of the resin portion 5 together. Furthermore, if the principal surface covering portion 51 is formed in a separate process from the frame-shaped portion 50, it is difficult to completely integrally mold the frame-shaped portion 50 and the principal surface covering portion 51. In this case, there is a concern that the principal surface covering portion 51 may peel off, but according to this embodiment, the peeling of the principal surface covering portion 51 can be suppressed.

[0054] 16 to 34 show modified examples and other embodiments of the first aspect of the present disclosure. In these figures, elements that are the same as or similar to those in the first embodiment of the first aspect are given the same reference numerals as those in the above-mentioned embodiments.

[0055] 16 and 17 show a first modified example of the semiconductor light emitting device A1. Fig. 16 is a plan view showing a semiconductor light emitting device A11 of this modified example. Fig. 17 is a cross-sectional view taken along line XVII-XVII in Fig. 16.

[0056] The semiconductor light emitting device A11 differs from the semiconductor light emitting device A1 described above in the configuration of the principal surface covering portion 51. The principal surface covering portion 51 of this modification has a shape that is interrupted in the y direction. More specifically, the principal surface covering portion 51 is interrupted near the center in the y direction and is divided into two portions. However, each portion of the principal surface covering portion 51 is connected to the frame portion 50. Such a principal surface covering portion 51 is generated, for example, by the conditions for filling the resin material shown in FIG. 12 and FIG. 13.

[0057] This modification also makes it possible to suppress exposure of the base material 2 to light from the semiconductor light emitting element 4. As can be understood from this modification, the main surface covering portion 51 of the present disclosure is not limited to covering the entire portion of the main surface 21 exposed from the main surface portion 31, and may cover only a portion of the portion of the main surface 21 exposed from the main surface portion 31.

[0058] 18 to 23 show a semiconductor light emitting device A2 according to a second embodiment of the first aspect of the present disclosure. FIG. 18 is a plan view showing the semiconductor light emitting device A2. FIG. 19 is a bottom view showing the semiconductor light emitting device A2. FIG. 20 is a cross-sectional view taken along line XX-XX in FIG. 18. FIG. 21 is a cross-sectional view taken along line XXI-XXI in FIG. 18. FIG. 22 is a cross-sectional view taken along line XXII-XXII in FIG. 18. FIG. 23 is a cross-sectional view showing one step of a manufacturing method for the semiconductor light emitting device A2.

[0059] In the second embodiment of the first side face, the base material 2 has a resin part through hole 28. The resin part through hole 28 penetrates the base material 2 and, in the illustrated example, overlaps with the main surface covering portion 51 when viewed in the z direction.

[0060] The resin portion 5 includes a main surface covering portion 51, a back surface covering portion 52, and a connecting portion 53. The back surface covering portion 52 covers a portion of the back surface 22 of the base material 2 that is exposed from the back surface portion 32. The back surface covering portion 52 has a back surface covering portion first surface 521. The back surface covering portion first surface 521 is a surface facing the same side as the back surface 22, and in the illustrated example, is a plane perpendicular to the z direction. The back surface covering portion first surface 521 is flush with the back surface portion first surface 3211 and the back surface portion second surface 3221. The main surface covering portion 51 covers the back surface portion first inclined surface 3212 of the back surface first portion 321 and the back surface portion second inclined surface 3222 of the back surface second portion 322.

[0061] The connecting portion 53 is formed in the resin portion through hole 28 of the base material 2, and penetrates the base material 2. The connecting portion 53 is connected to the back surface covering portion 52. In the illustrated example, 53 is connected to the main surface covering portion 51. Unlike the illustrated example, the connecting portion 53 may be connected to the frame portion 50.

[0062] As shown in FIG. 23, in manufacturing the semiconductor light emitting device A2, the sub-part 83 of the mold 8 is pressed against the back surface 22 side of the base material 2A. The sub-part 83 has an abutment surface 831. The abutment surface 831 is a plane perpendicular to the z direction. The abutment surface 831 abuts against the back surface first surface 3211 of the back surface first part 321 and the back surface second surface 3221 of the back surface second part 322. A gap is generated between the abutment surface 831 and the part of the back surface 22 exposed from the back surface 32. The resin material filled between the main part 81 and the protrusion 82 and the substrate 1 is filled into the gap between the sub-part 83 and the back surface 22 via the resin part through hole 28. The resin material is cured to obtain the resin part 5 of the semiconductor light emitting device A2.

[0063] The second embodiment of the first side surface also makes it possible to prevent the base material 2 from being exposed to light from the semiconductor light emitting element 4. Moreover, according to the second embodiment of the first side surface, the main surface covering portion 51 is connected to the back surface covering portion 52 via the connecting portion 53. This makes it possible to prevent the main surface covering portion 51, the frame portion 50, and the back surface covering portion 52 from peeling off from each other from the base material 2.

[0064] FIG. 24 is a plan view showing a semiconductor light emitting device A3 according to the third embodiment based on the first side. The semiconductor light emitting device A3 differs from the above-mentioned embodiment in the configuration of the semiconductor light emitting element 4. The semiconductor light emitting element 4 of the third embodiment on the first side is connected to the second wire 482 and not to the first wire 481. The semiconductor light emitting element 4 has an electrode (not shown) facing the main surface first portion 311, and this electrode is conductively joined to the main surface first surface 3111. The semiconductor light emitting element 4 is a so-called one-wire type LED chip. In this case, electrodes are formed on both sides of the semiconductor light emitting element 4 in the z direction. The second wire 482 is bonded to one electrode and is conductively connected to the main surface second portion 312. The other electrode is conductively joined to the main surface first surface 3111 of the main surface portion 31. This conductive joining is performed via a conductive bonding material, for example, Ag paste is used.

[0065] According to the third embodiment of the first aspect, the base material 2 can be prevented from being exposed to light from the semiconductor light emitting element 4.

[0066] Fig. 25 and Fig. 26 show a semiconductor light emitting device A4 according to a fourth embodiment of the present invention on the first side surface. Fig. 25 is a plan view showing the semiconductor light emitting device A4. Fig. 26 is a cross-sectional view taken along line XXVI-XXVI in Fig. 25.

[0067] The semiconductor light emitting element 4 of the fourth embodiment of the first side is a so-called flip chip type LED chip. One electrode of the semiconductor light emitting element 4 is conductively joined to the main surface first portion 311 by a first conductive bonding material 491. The other electrode of the semiconductor light emitting element 4 is conductively joined to the main surface second portion 312 by a second conductive bonding material 492. The first conductive bonding material 491 and the second conductive bonding material 492 are, for example, solder or Ag paste.

[0068] The fourth embodiment of the first aspect also makes it possible to suppress exposure of the base material 2 to light from the semiconductor light emitting element 4. Moreover, as can be seen from the semiconductor light emitting device A3 and the semiconductor light emitting device A4, the specific configuration of the semiconductor light emitting element 4 of the present disclosure is not limited in any way, and can be adopted in appropriate combination with various aspects of the other components.

[0069] 27 to 29 show a semiconductor light emitting device A5 according to a fifth embodiment of the first side. FIG. 27 is a plan view showing the semiconductor light emitting device A5. FIG. 28 is a bottom view showing the semiconductor light emitting device A5. FIG. 29 is a cross-sectional view taken along line XXIX-XXIX in FIG. 27. In the fifth embodiment of the first side, the main surface first portion 311 and the back surface first portion 321 have the same size, shape and arrangement as seen in the z direction. Also, the main surface second portion 312 and the back surface second portion 322 have the same size, shape and arrangement as seen in the z direction.

[0070] The fifth embodiment of the first side surface also prevents the substrate 2 from being exposed to light from the semiconductor light emitting element 4. As can be understood from the above-described embodiment, the size, shape, and arrangement of the main surface portion 31 and the back surface portion 32 as viewed in the z direction are not limited to the illustrated example, and can be modified as appropriate. The configurations of the main surface portion 31 and the back surface portion 32 of the semiconductor light emitting device A5 may be appropriately adopted in any of the above-described embodiments.

[0071] Fig. 30 to Fig. 32 show a semiconductor light emitting device A6 according to a sixth embodiment of the first side. Fig. 30 is a plan view showing the semiconductor light emitting device A6. Fig. 31 is a bottom view showing the semiconductor light emitting device A6. Fig. 32 is a cross-sectional view taken along line XXXII-XXXII in Fig. 30.

[0072] The substrate 2 of the sixth embodiment of the first side has a first groove portion 23 and a second groove portion 24. The first groove portion 23 is provided at one end of the substrate 2 in the x direction and is a groove recessed inward in the x direction. The first groove portion 23 reaches the main surface 21 and the back surface 22 in the z direction. The specific shape of the first groove portion 23 is not particularly limited, and in the illustrated example, it is a substantially semicircular shape. The second groove portion 24 is provided at the other end of the substrate 2 in the x direction and is a groove recessed inward in the x direction. The second groove portion 24 reaches the main surface 21 and the back surface 22 in the z direction. The specific shape of the second groove portion 24 is not particularly limited, and in the illustrated example, it is a substantially semicircular shape.

[0073] The conductive portion 3 of the sixth embodiment on the first side has a main surface portion 31, a back surface portion 32, a first connecting portion 33, a second connecting portion , a third connecting portion 35 and a fourth connecting portion .

[0074] The principal surface portion 31 of the sixth embodiment of the first side surface has a first principal surface portion 311, a second principal surface portion 312, a third principal surface portion 315, and a fourth principal surface portion 316. The principal surface portion 31 does not have the first extension portion 313 and the second extension portion 314 of the above-mentioned embodiments. That is, the first principal surface portion 311 and the second principal surface portion 312 are each spaced apart from the edge of the base material 2 when viewed in the z direction.

[0075] The principal surface third portion 315 is provided along one end in the x direction of the principal surface 21 of the base material 2. The principal surface third portion 315 is spaced from the principal surface first portion 311 in the x direction. The principal surface third portion 315 closes the first groove portion 23 from the principal surface 21 side in the z direction. The shape of the principal surface third portion 315 is not particularly limited, and is substantially semicircular in the illustrated example. In the illustrated example, the principal surface third portion 315 is entirely covered by the resin portion 5, but only a portion of the principal surface third portion 315 may be covered by the resin portion 5, or the entire principal surface third portion 315 may be exposed from the resin portion 5.

[0076] The principal surface fourth portion 316 is provided along the other end in the x direction of the principal surface 21 of the base material 2. The principal surface fourth portion 316 is spaced from the principal surface second portion 312 in the x direction. The principal surface fourth portion 316 closes the second groove portion 24 from the principal surface 21 side in the z direction. The shape of the principal surface fourth portion 316 is not particularly limited, and is substantially semicircular in the illustrated example. In the illustrated example, the principal surface fourth portion 316 is entirely covered by the resin portion 5, but it may be only partially covered by the resin portion 5, or it may be entirely exposed from the resin portion 5.

[0077] The back surface portion 32 of the sixth embodiment of the first side surface has a back surface first portion 321 , a back surface second portion 322 , a first extending portion 323 and a second extending portion 324 .

[0078] The rear surface first portion 321 of the first side surface in the sixth embodiment reaches one end in the x direction of the rear surface 22 of the substrate 2. The rear surface portion 321 has a recess 3215. The recess 3215 is a portion shaped along the first groove portion 23 of the substrate 2 when viewed in the z direction.

[0079] The rear surface second portion 322 of the first side surface in the sixth embodiment reaches the other end in the x direction of the rear surface 22 of the substrate 2. The rear surface second portion 322 has a recess 3225. The recess 3225 is a portion shaped along the second groove portion 24 of the substrate 2 when viewed in the z direction.

[0080] The first extending portion 323 is connected to the back surface first portion 321 and reaches the edge of the base material 2 when viewed in the z direction. In the illustrated example, two first extending portions 323 are provided which are connected to the back surface first portion 321 from both sides in the y direction.

[0081] The second extending portion 324 is connected to the rear surface second portion 322 and reaches the edge of the base material 2 when viewed in the z direction. In the illustrated example, two second extending portions 324 are provided that are connected to the rear surface second portion 322 from both sides in the y direction.

[0082] The third connecting portion 35 is formed in the first groove portion 23 of the substrate 2, and provides electrical continuity between the main surface third portion 315 and the back surface first portion 321. In the illustrated example, the third connecting portion 35 is formed integrally with the back surface first portion 321 by a plating technique. In the illustrated example, the third connecting portion 35 is in the form of a film that covers the inner surface of the first groove portion 23, but is not limited thereto, and may be in a form in which the entire first groove portion 23 is filled, for example.

[0083] The conductive portion second through hole 26 is formed in the second groove portion 24 of the substrate 2, and provides electrical continuity between the main surface fourth portion 316 and the back surface second portion 322. In the illustrated example, the fourth connecting portion 36 is formed integrally with the back surface second portion 322 by a plating technique. In the illustrated example, the fourth connecting portion 36 is in the form of a film that covers the inner surface of the second groove portion 24, but is not limited thereto, and may be in a form in which the entire second groove portion 24 is filled, for example.

[0084] The sixth embodiment of the first aspect also makes it possible to prevent the base material 2 from being exposed to light from the semiconductor light emitting element 4. Furthermore, the provision of the third connecting portion 35 and the fourth connecting portion 36 has the advantage that a so-called solder fillet can be easily formed when the semiconductor light emitting device A6 is mounted on a circuit board or the like by soldering.

[0085] The main surface third portion 315 and the third connecting portion 35 are electrically connected to the main surface first portion 311 via the back surface first portion 321 and the first connecting portion 33. Therefore, it is not necessary to connect the main surface first portion 311 and the main surface third portion 315. Furthermore, the main surface first portion 311 is spaced apart from the outer edge of the base material 2 when viewed in the z direction. This makes it possible to prevent the bonding material from unduly spreading onto the main surface third portion 315, etc., even if the bonding material for bonding the semiconductor light emitting element 4 to the main surface first portion 311 is easily spread over the main surface first portion 311.

[0086] Since the back surface portion 32 has the first extension portion 323 and the second extension portion 324, for example, when the conductive portion 3 is formed by a plating technique in the manufacturing process of the semiconductor light emitting device A6, the first extension portion 323 and the second extension portion 324 can be used to ensure conductivity with the outside necessary for electrolytic plating.

[0087] Fig. 33 and Fig. 34 show a semiconductor light emitting device A7 according to a seventh embodiment of the present invention on the first side. Fig. 33 is a plan view showing the semiconductor light emitting device A7. Fig. 34 is a cross-sectional view taken along line XXXIV-XXXIV in Fig. 33.

[0088] In the seventh embodiment of the first side, the first groove portion 23 and the second groove portion 24 in the above-mentioned semiconductor light-emitting device A6 are formed in the substrate 2, the main surface portion 31 of the conductive portion 3 has a third main surface portion 315 and a fourth main surface portion 316, and the conductive portion 3 has a third connecting portion 35 and a fourth connecting portion 36.

[0089] The conductive portion 3 of the seventh embodiment of the first side surface does not have the first connecting portion 33 and the second connecting portion 34 of the above-mentioned embodiments. Moreover, in the seventh embodiment of the first side surface, the main surface first portion 311 and the main surface third portion 315 are connected to each other, and the main surface second portion 312 and the main surface fourth portion 316 are connected to each other.

[0090] The seventh embodiment of the first side surface also suppresses exposure of the base material 2 to light from the semiconductor light emitting element 4. In the seventh embodiment of the first side surface, the main surface first portion 311 is electrically connected to the back surface first portion 321 via the main surface third portion 315 and the third connecting portion 35. The main surface second portion 312 is connected to the back surface second portion 322 via the main surface fourth portion 316 and the fourth connecting portion 36. Therefore, when mounting the semiconductor light emitting device A7 on a circuit board or the like, the back surface first portion 321 and the back surface second portion 322 can be used as so-called mounting electrodes, and solder fillets can be formed on the third connecting portion 35 and the fourth connecting portion 36.

[0091] The semiconductor light emitting device and the method for manufacturing the semiconductor light emitting device according to the first aspect of the present disclosure are not limited to the above-mentioned embodiment. The configuration of the semiconductor light emitting device and the method for manufacturing the semiconductor light emitting device according to the first aspect of the present disclosure can be freely designed in various ways. The semiconductor light emitting device and the method for manufacturing the semiconductor light emitting device according to the first aspect of the present disclosure can be specified, for example, as in the following supplementary notes A1 to A19.

[0092] Appendix 1A. A semiconductor light emitting device comprising a substrate having a base material and a conductive portion, a semiconductor light emitting element supported on the substrate, and a resin portion covering at least a portion of the substrate, wherein the base material has a main surface and a back surface facing opposite each other in a thickness direction, the conductive portion includes a main surface portion formed on the main surface, the semiconductor light emitting element is mounted on the main surface portion, and the resin portion includes a frame-shaped portion surrounding the semiconductor light emitting element as viewed in the thickness direction, and a main surface covering portion connected to the frame-shaped portion and covering a portion of the main surface of the base material that is exposed from the main surface portion. Addendum 2A. The main surface portion includes a main surface first portion and a main surface second portion spaced apart from each other in a first direction perpendicular to the thickness direction; The semiconductor light emitting device of claim 1A, wherein the main surface covering portion is located between the main surface first portion and the main surface second portion. Addendum 3A. The main surface first portion has a main surface portion first surface facing the same side as the main surface, the main surface second portion has a main surface portion second surface facing the same side as the main surface, The semiconductor light emitting device according to Appendix 2A, wherein the main surface covering portion has a main surface covering portion first surface that is flush with the main surface portion first surface and the main surface portion second surface. Supplementary Note 4A. The main surface first portion has a main surface first inclined surface that is connected to the main surface first surface and is inclined so as to move away from the main surface first surface in the first direction as it approaches the main surface in the thickness direction; The semiconductor light emitting device according to Appendix 3A, wherein the main surface first inclined surface is covered by the main surface covering portion. Supplementary Note 5A. The main surface second portion has a main surface second inclined surface that is connected to the main surface second surface and is inclined so as to move away from the main surface second surface in the first direction as it approaches the main surface in the thickness direction, The semiconductor light emitting device according to Appendix 4A, wherein the main surface second inclined surface is covered by the main surface covering portion. Appendix 6A. The semiconductor light emitting device according to Appendix 2A or 3A, wherein the main surface covering portion crosses the region surrounded by the frame portion in a second direction perpendicular to the first direction when viewed in the thickness direction. Appendix 7A. The semiconductor light emitting device according to any one of Appendixes 2A to 6A, wherein the conductive portion includes a back surface portion formed on the back surface. Appendix 8A. The semiconductor light emitting device of Appendix 7A, wherein the back surface portion includes a back surface first portion conductive to the main surface first portion and a back surface second portion conductive to the main surface second portion. Appendix 9A. The semiconductor light emitting device according to claim 8A, wherein the resin portion includes a back surface covering portion that covers a portion of the back surface that is exposed from the back surface portion. Addendum 10A. The base material has a through hole for a resin part penetrating in the thickness direction, The semiconductor light emitting device according to claim 9A, wherein the resin portion includes a connecting portion that is formed in the resin portion through hole and connects the main surface covering portion and the back surface covering portion. Addendum 11A. The back surface first portion has a back surface first surface facing the same side as the back surface, The back surface second portion has a back surface portion second surface facing the same side as the back surface, The semiconductor light emitting device of claim 9A or 10A, wherein the back surface covering portion has a back surface covering portion first surface that is flush with the back surface covering portion first surface and the back surface covering portion second surface. Supplementary Note 12A. The back surface first portion has a back surface first inclined surface that is connected to the back surface first surface and is inclined so as to move away from the back surface first surface in the first direction as it approaches the back surface in the thickness direction, The semiconductor light emitting device according to claim 11A, wherein the back surface first inclined surface is covered by the back surface covering portion. Supplementary Note 13A. The back surface second portion has a back surface second inclined surface that is connected to the back surface second surface and is inclined so as to move away from the back surface second surface in the first direction as it approaches the back surface in the thickness direction, The semiconductor light emitting device of claim 12A, wherein the back surface second inclined surface is covered by the back surface covering portion. Appendix 14A. The semiconductor light emitting device according to any one of Appendixes 2A to 13A, wherein the semiconductor light emitting element is mounted on the first main surface portion. Appendix 15A. The semiconductor light emitting device of Appendix 14A, further comprising a wire connected to the semiconductor light emitting element and the second main surface portion. Appendix 16A. The semiconductor light emitting device of Appendix 15A, further comprising a wire connected to the semiconductor light emitting element and the first main surface portion. Appendix 17A. The semiconductor light emitting device according to any one of Appendixes 2A to 13A, wherein the semiconductor light emitting element is conductively joined to the main surface first portion and the main surface second portion. Appendix 18A. A semiconductor light-emitting device according to any one of Appendixes 1A to 16A, further comprising a translucent resin portion that fills the space surrounded by the frame-shaped portion, covers the semiconductor light-emitting element, and transmits light from the semiconductor light-emitting element. Appendix 19A. A method for manufacturing a semiconductor light emitting device, comprising the steps of: preparing a substrate including a base material and a conductive main surface portion formed on a main surface of the base material, the main surface portion including a first main surface portion and a second main surface portion; filling a space defined by the substrate and the mold with a resin material while a tip face of a convex portion of a mold is brought into contact with the first main surface portion and the second main surface portion and a gap is generated between the tip face of the convex portion and the main surface; forming a resin portion including a frame-shaped portion and a main surface covering portion by hardening the resin material; and mounting a semiconductor light emitting element in an area surrounded by the frame-shaped portion, wherein the main surface covering portion covers a portion of the main surface of the substrate that is exposed from the main surface portion and is connected to the frame-shaped portion.

[0093] Next, a semiconductor light emitting element according to a second aspect of the present disclosure and a method for manufacturing the semiconductor light emitting device will be described. Figs. 35 to 40 show a semiconductor light emitting device according to one embodiment of the second aspect of the present disclosure. The illustrated semiconductor light emitting device B1 includes a substrate 1', a semiconductor light emitting element 4', a resin part 5', and a light-transmitting resin part 6'. The light-transmitting resin part 6' is omitted in Fig. 35. Figs. 41 to 45 are diagrams for explaining a method for manufacturing the semiconductor light emitting device B1.

[0094] FIG. 35 is a plan view showing the semiconductor light emitting device B1. FIG. 36 is a bottom view showing the semiconductor light emitting device B1. FIG. 37 is a cross-sectional view taken along line XXXVII-XXXVII in FIG. 35. FIG. 38 is a cross-sectional view taken along line XXXVIII-XXXVIII in FIG. 35. FIG. 39 is a cross-sectional view taken along line XXXIX-XXXIX in FIG. 35. FIG. 40 is a cross-sectional view taken along line XL-XL in FIG. 35. FIG. 41 is a cross-sectional view showing a step of a method for manufacturing the semiconductor light emitting device B1. FIG. 42 is a cross-sectional view taken along line XLII-XLII in FIG. 41. FIG. 43 is a cross-sectional view taken along line XLIII-XLIII in FIG. 41. FIG. 44 is a cross-sectional view showing a step of a method for manufacturing the semiconductor light emitting device B1. FIG. 45 is a cross-sectional view taken along line XLV-XLV in FIG. 44.

[0095] An example of the size of the semiconductor light emitting device B1 is about 1.6 mm in the x direction, about 0.8 mm in the y direction, and about 0.6 mm in the z direction. The size and shape of the semiconductor light emitting device B1 are not limited to this example and can be modified as appropriate.

[0096] The substrate 1' serves as a base for the semiconductor light emitting device B1. The substrate 1' includes a base material 2' and a conductive portion 3'.

[0097] The base material 2' is made of an insulating material. The insulating material constituting the base material 2' is not limited in any way, and may be, for example, a glass epoxy resin. The base material 2' has a main surface 21', a back surface 22', a first side surface 23', and a second side surface 24'. As shown in Figs. 37 to 40, the main surface 21' and the back surface 22' face opposite each other in the z direction. In the illustrated example, the main surface 21' and the back surface 22' are planes perpendicular to the z direction. The first side surface 23' connects the main surface 21' and the back surface 22' on one side in the x direction, and is perpendicular to the x direction in the illustrated example. The second side surface 24' connects the main surface 21' and the back surface 22' on the other side in the x direction, and is perpendicular to the x direction in the illustrated example. The shape of the base material 2' is not particularly limited, and may be, for example, rectangular when viewed in the z direction, as shown in Figs. 35 and 36. The thickness of the base material 2' is, for example, about 0.2 mm.

[0098] In this embodiment, the base material 2' has a first groove 25', a second groove 26', a first through hole 27', and a second through hole 28'. The first groove 25' is recessed from the first side surface 23' and extends to reach the main surface 21' and the back surface 22'. The shape of the first groove 25' is not particularly limited, and in the illustrated example, the cross section of the first groove 25' is semicircular. The second groove 26' is recessed from the second side surface 24' and extends to reach the main surface 21' and the back surface 22'. The shape of the second groove 26' is not particularly limited, and in the illustrated example, the cross section of the second groove 26' is semicircular.

[0099] The first through hole 27' penetrates the base material 2' in the z direction. As shown in Figs. 35 and 36, in the illustrated example, one first through hole 27' is provided. The second through hole 28' penetrates the base material 2' in the z direction. As shown in Figs. 35 and 36, in the illustrated example, one second through hole 28' is provided. In addition, the second through hole 28' is spaced apart from the first through hole 27' in the x direction. The number, size, arrangement, etc. of the first through hole 27' and the second through hole 28' are not limited to the illustrated example and can be modified as appropriate.

[0100] The conductive portion 3' is formed on the base material 2' and provides a conductive path to the semiconductor light emitting element 4' and a portion for mounting the semiconductor light emitting element 4'. The conductive portion 3' is made of a conductive material, such as a metal such as Cu, Ni, Pd, Ti, or Au. As an example, the conductive portion 3' can be constructed by forming a Cu plating layer by electrolytic plating on a base plating layer made of Ti and Cu formed on the base material 2'.

[0101] In this embodiment, as shown in FIGS. 35 to 40, a conductive portion 3' includes a main surface portion 31', a back surface portion 32', and a connecting portion 33'.

[0102] The main surface portion 31' is formed on the main surface 21' of the substrate 2'. The main surface portion 31' has a first main surface portion 311', a second main surface portion 312', a third main surface portion 315', and a fourth main surface portion 316'. The thickness of the main surface portion 31' is, for example, about 40 μm, although the present disclosure is not limited thereto.

[0103] The main surface first portion 311' is a portion that is electrically connected to one electrode of the semiconductor light emitting element 4'. The main surface second portion 312' is disposed apart from the main surface first portion 311' in the x direction, and is a portion that is electrically connected to the other electrode of the semiconductor light emitting element 4'. The shapes and sizes of the main surface first portion 311' and the main surface second portion 312' are not particularly limited. In the illustrated example, the main surface first portion 311' and the main surface second portion 312' are rectangular. The main surface first portion 311' is larger than the main surface second portion 312'. The main surface first portion 311' overlaps with the center of the base material 2' when viewed in the z direction. In the illustrated example, the main surface first portion 311' and the main surface second portion 312' are spaced apart from the edge of the base material 2'.

[0104] As shown in FIG. 35 and FIG. 37 to FIG. 40, the main surface first portion 311' has a main surface first surface 3111' and a main surface first inclined surface 3112'. The main surface first surface 3111' is a surface facing the same side as the main surface 21' in the z direction, and in the illustrated example, is a plane perpendicular to the z direction. The main surface first inclined surface 3112' is connected to the main surface first surface 3111' and is inclined so as to move away from the main surface first surface 3111' in the x direction as it approaches the main surface 21' in the z direction. In the illustrated example, the main surface first inclined surface 3112' is a convex curved surface. In addition, the main surface first inclined surface 3112' is provided in a portion of the main surface first portion 311' that faces the main surface second portion 312' in the x direction.

[0105] As shown in FIG. 35 and FIG. 37 to FIG. 40, the main surface second portion 312' has a main surface second surface 3121' and a main surface second inclined surface 3122'. The main surface second surface 3121' is a surface facing the same side as the main surface 21' in the z direction, and in the illustrated example, is a plane perpendicular to the z direction. The main surface second inclined surface 3122' is connected to the main surface second surface 3121' and is inclined so as to move away from the main surface second surface 3121' in the x direction as it approaches the main surface 21' in the z direction. In the illustrated example, the main surface second inclined surface 3122' is a convex curved surface. In addition, the main surface second inclined surface 3122' is provided in a portion of the main surface second portion 312' that faces the main surface first portion 311' in the x direction.

[0106] The main surface third portion 315' is provided along an edge of the main surface 21' of the base material 2' that contacts the first side surface 23'. The main surface third portion 315' is spaced apart from the main surface first portion 311' in the x direction. The main surface third portion 315' closes the first groove portion 25' from the main surface 21' side in the z direction. The shape of the main surface third portion 315' is not particularly limited, and is substantially semicircular in the illustrated example. In the illustrated example, the main surface third portion 315' is entirely covered by the resin portion 5', but it may be only partially covered by the resin portion 5' or entirely exposed from the resin portion 5'.

[0107] The principal surface fourth portion 316' is provided along an edge of the principal surface 21' of the base material 2' that contacts the second side surface 24'. The principal surface fourth portion 316' is spaced apart from the principal surface second portion 312' in the x-direction. The principal surface fourth portion 316' closes the second groove portion 26' from the principal surface 21' side in the z-direction. The shape of the principal surface fourth portion 316' is not particularly limited, and in the illustrated example, is substantially semicircular. In the illustrated example, the principal surface fourth portion 316' is entirely covered by the resin portion 5', but it may be covered only partially by the resin portion 5' or may be entirely exposed from the resin portion 5'.

[0108] The back surface portion 32' is formed on the main surface 21' of the base material 2'. In the illustrated example, the back surface portion 32' has a back surface first portion 321', a back surface second portion 322', a first extending portion 323', and a second extending portion 324'. The thickness of the back surface portion 32' is not particularly limited and is, for example, about 40 μm. For example, solder plating or Sn plating may be formed on the surface layer of the back surface portion 32'.

[0109] The back surface first portion 321' is a portion that is electrically connected to one electrode of the semiconductor light emitting element 4'. The back surface second portion 322' is disposed apart from the back surface first portion 321' in the x direction, and is a portion that is electrically connected to the other electrode of the semiconductor light emitting element 4'. The shapes and sizes of the back surface first portion 321' and the back surface second portion 322' are not particularly limited. In the illustrated example, the back surface first portion 321' is larger than the back surface second portion 322'. Moreover, the back surface first portion 321' overlaps with the center of the base material 2' when viewed in the z direction.

[0110] In the illustrated example, the back surface first portion 321' reaches the edge of the back surface 22' on the first side surface 23' side. When viewed in the z direction, the back surface first portion 321' overlaps with the main surface first portion 311'. The back surface first portion 321' has a recess 3215'. The recess 3215' has a shape that follows the first groove portion 25' of the base material 2' when viewed in the z direction.

[0111] The back surface second portion 322' reaches the edge of the back surface 22' on the second side surface 24' side. The back surface second portion 322' has a recess 3225'. The recess 3225' has a shape that follows the second groove portion 26' of the base material 2' when viewed in the z direction. The back surface second portion 322' overlaps with the main surface second portion 312'.

[0112] The first extending portion 323' is connected to the back surface first portion 321' and reaches the edge of the base material 2' in the y direction when viewed in the z direction. In the illustrated example, two first extending portions 323' are provided which are connected to the back surface first portion 321' from both sides in the y direction.

[0113] The second extending portion 324' is connected to the rear surface second portion 322' and reaches the edge of the base material 2' when viewed in the z direction. In the illustrated example, two second extending portions 324' are provided that are connected to the rear surface second portion 322' from both sides in the y direction.

[0114] The connecting portion 33' includes a portion that connects the main surface portion 31' and the back surface portion 32'. The connecting portion 33' in this embodiment includes a first penetrating portion connecting portion 331', a second penetrating portion connecting portion 332', a first groove connecting portion 333', and a second groove connecting portion 334'.

[0115] The first through-portion connecting portion 331' is formed in the first through-hole 27' of the base material 2', and provides electrical continuity between the main surface first portion 311' and the back surface first portion 321'. As shown in Figs. 37 and 38, in the illustrated example, the first through-portion connecting portion 331' is formed integrally with the back surface first portion 321' by a plating technique. The first through-portion connecting portion 331' fills the first through-hole 27' and fills the first through-hole 27'.

[0116] The second through-portion connecting portion 332' is formed in the second through-hole 28' of the base material 2', and provides electrical continuity between the main surface second portion 312' and the back surface second portion 322'. As shown in Fig. 37, in the illustrated example, the second through-portion connecting portion 332' is formed integrally with the back surface second portion 322' by a plating technique. The second through-portion connecting portion 332' is filled in the second through-hole 28', and fills the second through-hole 28'.

[0117] The semiconductor light emitting element 4' is a light source element of the semiconductor light emitting device B1. Examples of the semiconductor light emitting element 4' include an LED chip, a semiconductor laser element, a VCSEL element, and the like, but the present disclosure is not limited to these examples. In the following description, a case where the semiconductor light emitting element 4' is an LED chip will be described as an example.

[0118] As shown in Fig. 35, Fig. 37, and Fig. 39, the semiconductor light emitting element 4' is mounted on the main surface first portion 311'. In the illustrated example, the semiconductor light emitting element 4' overlaps with the center of the base material 2' when viewed in the z direction. The semiconductor light emitting element 4' has, for example, a rectangular shape when viewed in the z direction. The semiconductor light emitting element 4' of this embodiment is a so-called one-wire type LED chip.

[0119] The semiconductor light emitting element 4' has an electrode formed on the underside thereof bonded to the principal surface first surface 3111' of the principal surface first portion 311' by a conductive bonding material 491'. The conductive bonding material 491' is, for example, solder or Ag paste, but may be any other material that is conductive and can bond the semiconductor light emitting element 4' to the principal surface first surface 3111'.

[0120] A first wire 481' is connected to the semiconductor light emitting element 4'. The first wire 481' is connected to an electrode formed on the upper surface of the semiconductor light emitting element 4' and the main surface second portion 312'. The material of the first wire 481' is not particularly limited and is, for example, Au.

[0121] The resin portion 5' covers a part of the substrate 1'. The resin constituting the resin portion 5' is made of a thermosetting resin such as an epoxy resin. The resin portion 5' is preferably made of a material that is less susceptible to degradation by light from the semiconductor light emitting element 4' than the base material 2'. In this example, the resin portion 5' is made of a white epoxy resin. The z-direction dimension of the resin portion 5' is not particularly limited and is, for example, about 0.4 mm.

[0122] The resin portion 5' has a frame-shaped portion 50' and a main surface covering portion 51'.

[0123] As shown in FIG. 35, the frame-shaped portion 50' has a continuous rectangular shape when viewed in the z direction. When viewed in the z direction, the edges of the frame-shaped portion 50' and the edges of the substrate 2' coincide with each other. When viewed in the z direction, the frame-shaped portion 50' surrounds the semiconductor light-emitting element 4'. The frame-shaped portion 50' has a reflector 501'. As shown in FIG. 37 and FIG. 39, the reflector 501' is a surface that sandwiches the semiconductor light-emitting element 4' in the x direction and the y direction. The reflector 501' is inclined so that the farther it is from the main surface 21' in the z direction, the farther it is from the semiconductor light-emitting element 4' in the x direction or the y direction. In the illustrated example, the frame-shaped portion 50' covers a part of each of the main surface first portion 311' and the main surface second portion 312' of the main surface portion 31'.

[0124] As shown in FIG. 35, FIG. 37, and FIG. 40, the main surface covering portion 51' is connected to the frame portion 50' and covers a portion of the main surface 21' exposed from the main surface portion 31'. In this embodiment, the main surface covering portion 51' covers an exposed region of the main surface 21' sandwiched between the main surface first portion 311' and the main surface second portion 312' in the x direction. In the illustrated example, the main surface covering portion 51' covers the main surface portion first inclined surface 3112' of the main surface first portion 311' and the main surface portion second inclined surface 3122' of the main surface second portion 312'. As shown in FIG. 35 and FIG. 40, the main surface first portion 311' extends in the y direction in the region surrounded by the frame portion 50'. The frame-shaped portion 50' includes two portions spaced apart from each other in the y direction, and the main surface first portion 311' connects these two portions together.

[0125] The principal surface covering portion 51' has a principal surface covering portion first surface 511'. The principal surface covering portion first surface 511' faces the same side as the principal surface 21', and in the illustrated example, is a plane perpendicular to the z direction. The principal surface covering portion first surface 511' is flush with the principal surface portion first surface 3111' and the principal surface portion first inclined surface 3112'.

[0126] As shown in Figs. 37 to 40, the light-transmitting resin portion 6' fills the space surrounded by the frame portion 50' of the resin portion 5' and covers a part of the main surface portion 31', the semiconductor light-emitting element 4', and the first wire 481'. The light-transmitting resin portion 6' is made of a material that transmits light from the semiconductor light-emitting element 4', and is mainly composed of, for example, epoxy resin or silicone resin. The light-transmitting resin portion 6' may contain a fluorescent substance. For example, when the semiconductor light-emitting element 4' emits blue light, the light-transmitting resin portion 6' may contain a fluorescent substance that emits yellow light when excited by blue light. In this case, white light is emitted from the semiconductor light-emitting device B1.

[0127] The light-transmitting resin part 6' has a surface 61'. In the illustrated example, the surface 61' is curved downward in the z-direction. The light-transmitting resin part 6' having such a shape can be formed, for example, by dropping a liquid resin material into the area surrounded by the frame-shaped part 50' and curing it.

[0128] Next, an example of a method for manufacturing the semiconductor light emitting device B1 will be described with reference to FIGS.

[0129] First, a substrate 1B is prepared. The substrate 1B is a member from which a plurality of substrates 1' can be manufactured. In the following description, a case in which a plurality of semiconductor light emitting devices B1 are manufactured collectively will be described as an example, but the method for manufacturing the semiconductor light emitting devices B1 is not limited to this.

[0130] As shown in FIG. 41, the substrate 1B has a base material 2B and a conductive portion 3B. The base material 2B becomes the above-mentioned base material 2' and has a main surface 21' and a back surface 22'. The conductive portion 3B becomes the above-mentioned conductive portion 3' and has a plurality of main surface portions 31' and back surface portions 32'. The base material 2B has a first groove through hole 25B and a second groove through hole 26B formed therein. The first groove through hole 25B and the second groove through hole 26B are cut in a process described later to become the first groove portion 25' and the second groove portion 26', respectively. The first groove through hole 25B and the second groove through hole 26B have, for example, a circular cross section.

[0131] Next, the die 8' is pressed against the substrate 1B. The substrate 1B is supported from below in the z direction by a support member (not shown). The die 8' has a main portion 81' and a protruding portion 82'. The main portion 81' is a portion spaced apart from the substrate 1B in the z direction. The protruding portion 82' is a portion protruding from the main portion 81' in the z direction. The protruding portion 82' has an abutment surface 821'. The abutment surface 821' is provided at the tip of the protruding portion 82' in the z direction. The abutment surface 821' is a flat surface perpendicular to the z direction. The abutment surface 821' abuts against a main surface portion first surface 3111' of the main surface first portion 311' and a main surface portion second surface 3121' of the main surface second portion 312'. A gap is generated between a portion of the principal surface 21' located between the principal surface first portion 311' and the principal surface second portion 312' in the x direction and the contact surface 821'.

[0132] Next, the space between the substrate 1B and the mold 8' is filled with, for example, a liquid thermosetting resin material. The resin material is then cured to form the resin portion 5B shown in Figs. 44 and 45. The resin material filled between the main portion 81' and the substrate 1B forms a portion including the frame-shaped portion 50'. The resin material filled in the gap defined by the abutment surface 821', the main surface 21', the main surface first portion 311', and the main surface second portion 312' forms the main surface covering portion 51'.

[0133] Next, the mold 8' is removed, and the semiconductor light emitting element 4' and the first wire 481' are bonded, respectively. Thereafter, a light-transmitting resin material is filled into the space surrounded by the frame portion 50', for example by a potting technique, and cured to form the light-transmitting resin portion 6'. The substrate 1B and the resin portion 5B are appropriately cut to obtain the above-mentioned semiconductor light emitting device B1.

[0134] Next, the operation of the semiconductor light emitting device B1 will be described.

[0135] According to this embodiment, the conductive portion 3' has a first groove portion connecting portion 333' along the first groove portion 25'. Therefore, when the semiconductor light emitting device B1 is mounted on, for example, a circuit board, it is possible to form a solder fillet. This increases the mounting strength of the semiconductor light emitting device B1 and makes it easier to visually check whether the solder is formed properly. In addition, the main surface first portion 311' and the connecting portion 33' are electrically connected to each other via the first penetrating portion connecting portion 331' and the back surface first portion 321', while being spaced apart from each other on the main surface 21'. This makes it possible to prevent the material of the conductive bonding material 491' from spreading to the first groove portion connecting portion 333' when the semiconductor light emitting element 4' is mounted on the main surface first portion 311'. Therefore, the mounting of the semiconductor light emitting element 4' and the mounting of the semiconductor light emitting device B1 can be performed appropriately.

[0136] The conductive portion 3' has a second groove connecting portion 334' along the second groove 26'. This allows solder fillets to be formed on both sides of the semiconductor light emitting device B1 in the x direction. This is preferable for increasing the mounting strength of the semiconductor light emitting device B1 and for visually checking whether the solder has been formed properly. Furthermore, even if the material of the conductive bonding material 491' spreads to the main surface second portion 312' when the semiconductor light emitting element 4' is mounted, it is possible to prevent the material from reaching the second groove connecting portion 334'.

[0137] According to this embodiment, as shown in Fig. 35, Fig. 37 and Fig. 40, the portion of the main surface 21' of the base material 2' exposed from the main surface portion 31' is covered by the main surface covering portion 51'. This makes it possible to prevent the base material 2' from being exposed to light from the semiconductor light emitting element 4', and therefore to prevent deterioration of the base material 2'. In addition, it is possible to select a material that may be deteriorated by light as the material of the base material 2', and therefore it is possible to reduce costs.

[0138] By using a material for the resin portion 5' that is less susceptible to degradation by light from the semiconductor light emitting element 4' than the material for the base material 2', degradation of the semiconductor light emitting element 4' due to light can be suppressed.

[0139] The principal surface covering portion 51' traverses the region surrounded by the frame-shaped portion 50' in the y direction, and both ends are connected to the frame-shaped portion 50'. This makes it possible to prevent the principal surface covering portion 51' from being separated from the principal surface 21'.

[0140] Since the principal surface covering portion first surface 511', the principal surface portion first surface 3111', and the principal surface portion second surface 3121' are flush with each other, they can form a large plane. This makes it possible to more efficiently reflect light from the semiconductor light emitting element 4' in the z direction, which is preferable for increasing the brightness of the semiconductor light emitting device B1.

[0141] Since the main surface first inclined surface 3112' of the main surface first portion 311' and the main surface second inclined surface 3122' of the main surface second portion 312' are covered by the main surface covering portion 51', a curved surface corresponding to the main surface first inclined surface 3112' and the main surface second inclined surface 3122' is formed in the main surface covering portion 51'. This curved surface can reduce stress concentration on the main surface covering portion 51'.

[0142] 46 to 54 show modified examples and other embodiments of the second aspect of the present disclosure. In these figures, elements that are the same as or similar to those in the above-described embodiment are given the same reference numerals as those in the embodiment.

[0143] 46 is a cross-sectional view showing a first modified example of the semiconductor light emitting device B1. The illustrated semiconductor light emitting device B11 differs from the above-described semiconductor light emitting device B1 in the positions of the first through hole 27' and the first through portion coupling portion 331'.

[0144] In this modification, the first through hole 27' and the first through portion connection portion 331' are disposed at a position overlapping with the semiconductor light emitting element 4' when viewed in the z direction. In other words, the first through portion connection portion 331' is positioned directly below the semiconductor light emitting element 4' in the z direction.

[0145] This modification also makes it possible to appropriately mount the semiconductor light emitting element 4' and to appropriately mount the semiconductor light emitting device B11. Furthermore, since the first through-portion connecting portion 331' is provided directly below the semiconductor light emitting element 4', it is possible to promote heat dissipation from the semiconductor light emitting element 4'. As can be seen from this modification, the positions of the first through-portion connecting portion 331' and the second through-portion connecting portion 332' can be appropriately changed. A plurality of first through-portion connecting portions 331' and a plurality of second through-portion connecting portions 332' may be provided.

[0146] 47 is a cross-sectional view showing a second modification of the semiconductor light emitting device B1. The semiconductor light emitting device B12 of this modification has a different structure of a resin part 5' from the above-described semiconductor light emitting device B1.

[0147] The resin part 5' in this modified example is not formed by resin molding using a mold 8', but is formed, for example, by joining a preformed resin part 5' (or a plurality of resin intermediate products capable of forming the resin part 5') to the substrate 1' (substrate 1B). The resin part 5' is joined to the substrate 1' by, for example, a joining layer 59'. The joining layer 59' is made of, for example, an adhesive. The resin part 5' in this modified example does not have the main surface covering part 51' described above.

[0148] This modification also makes it possible to appropriately mount the semiconductor light emitting element 4' and the semiconductor light emitting device B12. As can be understood from this modification, the specific configuration of the resin part 5' is not particularly limited, and in other modifications and embodiments, various configurations can be adopted for the resin part 5'.

[0149] 48 is a cross-sectional view showing a third modification of the semiconductor light emitting device B1. The semiconductor light emitting device B13 of this modification differs from the above-described semiconductor light emitting device B1 in the structure covering the first groove 25' and the second groove 26'.

[0150] The semiconductor light emitting device B13 includes a first insulating layer 71' and a second insulating layer 72'. The first insulating layer 71' closes the first groove 25' from above in the z direction. The second insulating layer 72' closes the second groove 26' from above in the z direction. The first insulating layer 71' and the second insulating layer 72' are made of, for example, an insulating resist layer. The shapes of the first insulating layer 71' and the second insulating layer 72' are not particularly limited, and may be the same as the shapes of the main surface third portion 315' and the main surface fourth portion 316' described above. The first insulating layer 71' and the second insulating layer 72' are formed, for example, by pressing a film forming a resist layer against the first groove through hole 25B and the second groove through hole 26B of the base material 2B in FIG. 41. In this case, the first insulating layer 71' and the second insulating layer 72' are shaped so that portions thereof are embedded in the first groove portion 25' and the second groove portion 26' as in the illustrated example.

[0151] This modification also makes it possible to appropriately mount the semiconductor light emitting element 4' and the semiconductor light emitting device B13. The first insulating layer 71' and the second insulating layer 72' contribute to improving the bonding strength between the resin portion 5' and the substrate 1.

[0152] 49 is a cross-sectional view showing a semiconductor light emitting device according to the second embodiment of the second aspect. The illustrated semiconductor light emitting device B2 differs from the above-described semiconductor light emitting device B1 mainly in the configuration of the conductive portion 3'.

[0153] The base material 2' has a first through hole 27' formed therein, but does not have a second through hole 28' (see FIG. 37). The connecting portion 33' of this embodiment has a first through portion connecting portion 331' but does not have a second through portion connecting portion 332' (see FIG. 37).

[0154] In the main surface portion 31' of this embodiment, the main surface second portion 312' and the main surface fourth portion 316' are connected to each other. The main surface fourth portion 316' is connected to the back surface second portion 322' by a second groove connecting portion 334'.

[0155] This embodiment also makes it possible to appropriately mount the semiconductor light emitting element 4' and the semiconductor light emitting device B2. Even in a configuration in which the second main surface portion 312' and the fourth main surface portion 316' are connected to each other, if the material of the conductive bonding material 491' is prevented from spreading to the second main surface portion 312' in the step of forming the conductive bonding material 491', unintended defects can be suppressed.

[0156] Figures 50 and 51 show a semiconductor light emitting device B3 according to the third embodiment of the second side surface, Figure 50 being a plan view showing the semiconductor light emitting device B3, and Figure 51 being a bottom view showing the semiconductor light emitting device B3.

[0157] In this embodiment, the substrate 2' has two first grooves 25' and two second grooves 26'. The two first grooves 25' are in contact with both ends in the y direction of the main surface 21' of the substrate 2'. The two second grooves 26' are in contact with both ends in the y direction of the main surface 21' of the substrate 2'.

[0158] The main surface portion 31' has two main surface third portions 315' and two main surface fourth portions 316'. The two main surface third portions 315' are formed individually along the two first groove portions 25'. The two main surface fourth portions 316' are formed individually along the two second groove portions 26'.

[0159] The back surface portion 32' has two third extension portions 325' and two fourth extension portions 326'. The two third extension portions 325' extend along parts of the two first groove portions 25' and extend from the back surface first portion 321' in the y direction. The two third extension portions 325' reach both ends of the back surface 22' in the y direction. The two fourth extension portions 326' extend along parts of the two second groove portions 26' and extend from the back surface second portion 322' in the y direction. The two fourth extension portions 326' reach both ends of the back surface 22' in the y direction.

[0160] The back surface first portion 321' has two recesses 3215'. The two recesses 3215' are aligned respectively along portions of the two first groove portions 25'. The back surface second portion 322' has two recesses 3225'. The two recesses 3225' are aligned respectively along portions of the two second groove portions 26'.

[0161] This embodiment also allows the semiconductor light emitting element 4' to be mounted appropriately, and the semiconductor light emitting device B3 to be mounted appropriately. As can be seen from this embodiment, the number and arrangement of the first grooves 25' and the second grooves 26' are not limited in any way. If the first grooves 25' and the second grooves 26' are arranged in the corners of the base material 2' as viewed in the z direction, as in this embodiment, there is an advantage that interference with the main surface first portion 311' and the main surface second portion 312' can be easily avoided.

[0162] 52 is a cross-sectional view showing a semiconductor light emitting device B4 according to the fourth embodiment of the second aspect. The semiconductor light emitting device B4 has a first wire 481' and a second wire 482'.

[0163] The semiconductor light emitting element 4' of this embodiment is a so-called two-wire type semiconductor light emitting element having two electrodes on the upper surface. The first wire 481' is connected to one electrode of the semiconductor light emitting element 4' and the main surface second portion 312'. The second wire 482' is connected to the other electrode of the semiconductor light emitting element 4' and the main surface first portion 311'.

[0164] The semiconductor light emitting element 4' is bonded to the main surface portion first surface 3111' of the main surface first portion 311' by a bonding material 492'. The bonding material 492' may be conductive or insulating.

[0165] According to this embodiment as well, it is possible to appropriately mount the semiconductor light emitting element 4' and the semiconductor light emitting device B4.

[0166] Fig. 53 and Fig. 54 are cross-sectional views showing a semiconductor light emitting device B5 according to a fifth embodiment of the second side. Fig. 53 is a plan view showing the semiconductor light emitting device B5. Fig. 54 is a cross-sectional view taken along line LIV-LIV in Fig. 53. In the semiconductor light emitting device B5, the main difference from the above-described embodiments is the configuration of the semiconductor light emitting element 4'.

[0167] The semiconductor light emitting element 4' of this embodiment is a flip-chip type LED chip. One electrode of the semiconductor light emitting element 4' is conductively joined to the main surface first portion 311' by a conductive bonding material 491'. The other electrode of the semiconductor light emitting element 4' is conductively joined to the main surface second portion 312' by a conductive bonding material 491'. The conductive bonding material 491' is, for example, solder or Ag paste.

[0168] In this embodiment, the semiconductor light emitting element 4' is disposed approximately at the center of the base material 2'. Correspondingly, the x-direction dimensions of the main surface first portion 311' and the main surface second portion 312' are approximately the same. In addition, the main surface covering portion 51' is located approximately at the center in the x-direction of the semiconductor light emitting device B5. The x-direction dimensions of the back surface first portion 321' and the back surface second portion 322' are approximately the same.

[0169] This embodiment also makes it possible to appropriately mount the semiconductor light emitting element 4' and the semiconductor light emitting device B5. As can be seen from the semiconductor light emitting devices B4 and B5, the specific configuration of the semiconductor light emitting element 4' of the present disclosure is not limited in any way and can be appropriately combined with various aspects of the other components.

[0170] The arrangement of the semiconductor light emitting element 4' on the substrate 1 is not particularly limited, and may be arranged so that the center of the semiconductor light emitting element 4' coincides with the center of the base material 2' when viewed in the z direction, or may be arranged so that the semiconductor light emitting element 4' overlaps with the center in the z direction. Also, the semiconductor light emitting element 4' may be arranged away from the center of the base material 2'.

[0171] The semiconductor light emitting device and the method for manufacturing the semiconductor light emitting device according to the second aspect of the present disclosure are not limited to the above-mentioned embodiment. The configuration of the semiconductor light emitting device and the method for manufacturing the semiconductor light emitting device according to the second aspect of the present disclosure can be freely designed in various ways. The semiconductor light emitting device according to the second aspect of the present disclosure can be specified, for example, as in the following Supplementary Notes B1 to B20.

[0172] Appendix B1. A semiconductor light emitting device comprising a substrate having a base material and a conductive portion, a semiconductor light emitting element supported by the substrate, and a resin portion covering at least a portion of the substrate, wherein the substrate has a main surface and a back surface facing opposite each other in a thickness direction, a first side surface and a second side surface connecting the main surface and the back surface and positioned opposite each other in a first direction perpendicular to the thickness direction, a first groove portion recessed from the first side surface and reaching the main surface and the back surface, and a first through hole penetrating in the thickness direction, and the conductive portion is a portion of the main surface and the back surface. a main surface portion formed on a front surface of the semiconductor light emitting device, a back surface portion formed on the back surface of the semiconductor light emitting device, and a connecting portion including at least a first groove connecting portion formed in the first groove and a first through hole connecting portion formed in the first through hole, wherein the main surface portion has a main surface first portion on which the semiconductor light emitting element is mounted, the back surface portion has a back surface first portion, the first through hole connecting portion connects the main surface first portion and the back surface first portion, the first groove connecting portion connects to the back surface first portion, and the main surface first portion and the first groove connecting portion are spaced apart from each other. Appendix 2B. The semiconductor light emitting device of Appendix 1B, wherein the main surface portion has a main surface third portion that covers the first groove portion when viewed in the thickness direction and is connected to the back surface first portion by the first groove portion connecting portion. Appendix 3B. The semiconductor light emitting device according to Appendix 1B or 2B, wherein the first groove portion is spaced apart from both ends of the main surface in the thickness direction and in a second direction perpendicular to the first direction. Appendix 4B. The semiconductor light emitting device according to Appendix 1B or 2B, wherein the first groove portion contacts either one of both ends of the main surface in the thickness direction and a second direction perpendicular to the first direction. Appendix 5B: The semiconductor light emitting device according to Appendix 1B or 2B, wherein the substrate has two of the first groove portions that respectively contact both ends of the main surface in the thickness direction and a second direction perpendicular to the first direction. Appendix 6B. The semiconductor light emitting device according to any one of Appendixes 1B to 5B, wherein the main surface first portion and the back surface first portion overlap each other when viewed in the thickness direction. Appendix 7B. The semiconductor light emitting device according to any one of Appendixes 1B to 6B, wherein the first groove connection portion is formed along an inner surface of the first groove portion. Appendix 8B. The semiconductor light emitting device according to any one of Appendixes 1B to 7B, wherein the first through hole connection portion fills the first through hole. Appendix 9B. The semiconductor light emitting device according to Appendix 1B, further comprising a first insulating layer covering the first groove portion when viewed in the thickness direction. Appendix 10B. A semiconductor light-emitting device according to any one of Appendixes 1B to 9B, further comprising a wire, the main surface portion having a main surface second portion spaced apart from the main surface first portion, and the wire being connected to the semiconductor light-emitting element and the main surface second portion. Appendix 11B. The semiconductor light emitting device of Appendix 10B, wherein the base material has a second groove portion recessed from the second side surface and reaching the main surface and the back surface, and a second through hole penetrating in the thickness direction, the back surface portion has a back surface second portion spaced from the back surface first portion, the connecting portion includes a second groove connecting portion formed in the second groove portion and a second through hole connecting portion formed in the second through hole, the second through hole connecting portion connecting the main surface second portion and the back surface second portion, the second groove connecting portion connecting to the back surface second portion, and the main surface second portion and the second groove connecting portion being spaced apart from each other. Appendix 12B. The semiconductor light emitting device of Appendix 11B, wherein the main surface portion has a main surface fourth portion that covers the second groove portion when viewed in the thickness direction and is connected to the back surface second portion by the second groove portion connecting portion. Appendix 13B. The semiconductor light emitting device according to Appendix 11B or 12B, wherein the second groove portion is spaced from both ends of the main surface in a second direction perpendicular to the thickness direction and the first direction. Appendix 14B. The semiconductor light emitting device according to Appendix 11B or 12B, wherein the second groove portion contacts either one of both ends of the main surface in a second direction perpendicular to the thickness direction and the first direction. Appendix 15B: The semiconductor light-emitting device according to Appendix 11B or 12B, wherein the substrate has two second groove portions that respectively contact both ends of the main surface in the thickness direction and a second direction that is perpendicular to the first direction. Appendix 16B. The semiconductor light emitting device according to any one of Appendixes 11B to 15B, wherein the main surface second portion and the back surface second portion overlap each other when viewed in the thickness direction. Appendix 17B. The semiconductor light emitting device according to any one of Appendixes 11B to 16B, wherein the second groove connection portion is formed along an inner surface of the second groove portion. Appendix 18B. The semiconductor light emitting device according to any one of Appendixes 11B to 17B, wherein the second through hole connection portion is filled in the second through hole. Appendix 19B. The semiconductor light emitting device according to Appendix 11B, further comprising a second insulating layer covering the second groove portion when viewed in the thickness direction. Addendum 20. A semiconductor light-emitting device described in any one of Addendums 1B to 19B, wherein the resin portion includes a frame-shaped portion that surrounds the semiconductor light-emitting element when viewed in the thickness direction, and a main surface covering portion that is connected to the frame-shaped portion and covers a portion of the main surface of the base material that is exposed from the main surface portion. [Explanation of symbols]

[0173] A1, A11, A2, A3, A4, A5, A6: Semiconductor light-emitting devices 1: Circuit board 1A: Circuit board 2: Base material 2A: Base material 3: Conductive part 3A: Conductive part 4: Semiconductor light emitting device 5: Resin part 5A: Resin part 6: Translucent resin part 8: Mold 21: Main surface 22: Back side 25: First through hole for conductive part 26: Second through hole for conductive part 28: Through hole for resin part 31:Main surface part 32: Back part 33: 1st connection part 34:Second connection part 50: Frame-shaped part 51: Main surface covering part 52: Back covering part 53: Connecting part 81: Main part 82: Convex part 83: Sub part 311: First main surface part 312: Second main surface part 313: First extending part 314: Second extending part 321: First back surface part 322: Second back surface part 481: First wire 482: Second wire 491: First conductive bonding material 492: Second conductive bonding material 501: Reflector 511: First main surface covering surface 521: First back surface covering surface 821: Contact surface 831: Contact surface 3111: First main surface part surface 3112: First main surface part inclined surface 3121: Second main surface part surface 3122: Second main surface part inclined surface 3211: First back surface part surface 3212: First back surface part inclined surface 3221: Second back surface part surface 3222: Second back surface part inclined surface B1, B11, B12, B13, B2, B3, B4, B5: Semiconductor light emitting device 1’, 1B: Substrate 2’, 2B: Base material 3’, 3B: Conductive part 4’: Semiconductor light emitting element 5’, 5B: Resin part 6’: Light transmissive resin part 8’: Mold 21’: Main surface 22’: Back surface 23’: First side surface 24’: Second side surface 25’: First groove part 25B: Through hole for the first groove part 26’: Second groove part 26B: Through-hole for the second groove part 27’: First through-hole 28’: Second through-hole 31’: Main surface part 32’: Back surface part 33’: Connecting part 50’: Frame-shaped part 51’: Main surface covering part 59’: Bonding layer 61’: Surface 71’: First insulating layer 72’: Second insulating layer 81’: Main part 82’: Protrusion 311’: First part of the main surface 312’: Second part of the main surface 315’: Third part of the main surface 316’: Fourth part of the main surface 321’: First part of the back surface 322’: Second part of the back surface 323’: First extending part 324’: Second extending part 325’: Third extending part 326’: Fourth extending part 331’: Connecting part of the first through-hole 332’: Connecting part of the second through-hole 333’: Connecting part of the first groove part 334’: Connecting part of the second groove part 481’: First wire 482’: Second wire 491’: Conductive bonding material 492’: Bonding material 501’: Reflector 511’: First surface of the main surface covering part 821’: Contact surface 3111’: First surface of the main surface part 3112’: First inclined surface of the main surface part 3121’: Second surface of the main surface part 3122’: Second inclined surface of the main surface part 3215’: Recess 3225’: Recess

Claims

1. A substrate having a base material and a conductive portion; a semiconductor light emitting element supported by the substrate; a resin portion covering at least a portion of the substrate, The substrate has a main surface and a back surface facing opposite to each other in a thickness direction, the conductive portion includes a main surface portion formed on the main surface and a back surface portion formed on the back surface, the semiconductor light emitting element is mounted on the main surface portion, the resin portion includes a frame portion surrounding the semiconductor light emitting element when viewed in the thickness direction, and a main surface covering portion connected to the frame portion and covering a portion of the main surface of the base material that is exposed from the main surface portion, the main surface portion includes a main surface first portion and a main surface second portion spaced apart from each other in a first direction perpendicular to the thickness direction, the rear surface portion includes a rear surface first portion that is electrically connected to the main surface first portion, a size of the back surface first portion in a second direction perpendicular to the first direction and the thickness direction is larger than a size of the semiconductor light emitting element in the second direction; the principal surface covering portion is located between the principal surface first portion and the principal surface second portion, the main surface first portion has a main surface portion first surface facing the same side as the main surface, the main surface second portion has a main surface portion second surface facing the same side as the main surface, the main surface covering portion has a main surface covering portion first surface that is flush with the main surface portion first surface and the main surface portion second surface, the main surface first portion has a main surface portion first inclined surface that is connected to the main surface portion first surface and is inclined so as to move away from the main surface portion first surface in the first direction as it approaches the main surface in the thickness direction, the first inclined surface of the main surface portion is covered by the main surface covering portion, The first inclined surface of the main surface is a convex curved surface.

2. the main surface second portion has a main surface portion second inclined surface that is connected to the main surface portion second surface and is inclined so as to move away from the main surface portion second surface in the first direction as it approaches the main surface in the thickness direction, the second inclined surface of the main surface portion is covered by the main surface covering portion, The semiconductor light emitting device according to claim 1 , wherein the second inclined surface of the main surface is a convex curved surface.

3. The semiconductor light emitting device according to claim 1 , wherein the main surface covering portion crosses in the second direction a region surrounded by the frame portion when viewed in the thickness direction.

4. 4. The semiconductor light emitting device according to claim 1, wherein the back surface portion includes a second back surface portion that is electrically connected to the second main surface portion.

5. The semiconductor light emitting device according to claim 4 , wherein the resin portion includes a back surface covering portion that covers a portion of the back surface that is exposed from the back surface portion.

6. the base material has a through hole for a resin portion penetrating therethrough in the thickness direction, The semiconductor light emitting device according to claim 5 , wherein the resin portion includes a connecting portion that is formed in the resin portion through hole and connects the main surface covering portion and the back surface covering portion.

7. The back surface first portion has a back surface portion first surface facing the same side as the back surface, The back surface second portion has a back surface portion second surface facing the same side as the back surface, The semiconductor light emitting device according to claim 5 , wherein the back surface covering portion has a back surface covering portion first surface that is flush with the back surface first surface and the back surface second surface.

8. the rear surface first portion has a rear surface first inclined surface that is connected to the rear surface first surface and is inclined so as to move away from the rear surface first surface in the first direction as the rear surface first surface approaches the rear surface in the thickness direction, The semiconductor light emitting device according to claim 7 , wherein the back surface first inclined surface is covered by the back surface covering portion.

9. the rear surface second portion has a rear surface second inclined surface that is connected to the rear surface second surface and is inclined so as to move away from the rear surface second surface in the first direction as the rear surface approaches the rear surface in the thickness direction, The semiconductor light emitting device according to claim 8 , wherein the second inclined back surface is covered by the back surface covering portion.

10. 10. The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting element is mounted on the first main surface portion.

11. The semiconductor light emitting device according to claim 10 , further comprising a wire connected to the semiconductor light emitting element and the second main surface portion.

12. The semiconductor light emitting device according to claim 11 , further comprising a wire connected to the semiconductor light emitting element and the first main surface portion.

13. 10. The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting element is conductively joined to the first main surface portion and the second main surface portion.

14. 13. The semiconductor light emitting device according to claim 1, further comprising a light-transmitting resin portion filling a space surrounded by said frame portion, covering said semiconductor light emitting element, and transmitting light from said semiconductor light emitting element.

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