Method for manufacturing a semiconductor device
The method of forming a semiconductor device by supplying oxygen to the semiconductor layer during heat treatment and then removing the metal oxide layer addresses the challenges of stable electrical characteristics, resulting in a highly reliable semiconductor device.
JP7682962B2Active Publication Date: 2025-05-26SEMICON ENERGY LAB CO LTD
Patent Information
- Application Number
- JP2023143832
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2018-08-09
- Filing Date
- 2023-09-05
- Publication Date
- 2025-05-26
- Estimated Expiration
- 2039-08-06
Smart Images
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Abstract
To provide: a semiconductor device which has an excellent electrical characteristic; a semiconductor device which has a stable electrical characteristic; and a semiconductor device which has high reliability.SOLUTION: A semiconductor layer containing a metal oxide is formed, a gate insulating layer containing an oxide is formed over the semiconductor layer, and a metal oxide layer is formed over the gate insulating layer. Heat treatment is performed after the metal oxide layer is formed, and the metal oxide layer is removed after the heat treatment is performed. After the metal oxide layer is removed, a gate electrode overlapping with part of the semiconductor layer is formed over the gate insulating layer. Then, a first element is supplied through the gate insulating layer to a region of the semiconductor layer that does not overlap with the gate electrode. Examples of the first element include phosphorus, boron, magnesium, aluminum, and silicon. The steps performed after the metal oxide layer is removed are each preferably performed at a temperature lower than or equal to the temperature of the heat treatment.SELECTED DRAWING: Figure 5
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Citation Information
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