UM-based configuration

The bonding layer with a stepped profile, composed of organic and inorganic materials, addresses the issues of material deterioration and thermal stress in electrostatic chucks by enhancing uniformity and resistance to degradation, thereby improving the bonding layer's durability and effectiveness.

JP7682966B2Active Publication Date: 2025-05-26APPLIED MATERIALS INC
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Patent Information

Application Number
JP2023150739
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2017-10-03
Filing Date
2023-09-19
Publication Date
2025-05-26
Estimated Expiration
2038-07-20

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Patent Text Reader

Abstract

To provide a method for bonding an electrostatic chuck to a temperature control base that prevents localized delamination due to stress caused by thermal expansion.SOLUTION: In a method of bonding an electrostatic chuck 100 in which a substrate W is removably placed on the upper surface of a dielectric 102 to a temperature control base 104, a bonding layer 106 is formed between the dielectric including the electrostatic chuck and the temperature control base. A flow aperture 112 passes through the dielectric, and matches a flow aperture in the temperature control base. The bonding layer is configured with an opening that aligns with an aperture in the dielectric and the temperature control base.SELECTED DRAWING: Figure 1
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Citation Information

Patent Citations

  • Member for semiconductor manufacturing device

    JP2013232640A

  • Adhesive sheet for electrostatic chuck and method for producing the same

    JP2015151441A

  • Electrostatic chuck

    JP2015195346A