Semiconductor device and manufacturing method
The semiconductor device addresses the issue of defects caused by high-temperature annealing by using a second semiconductor region and a first member to enable a low-temperature, short-time annealing process, resulting in improved reliability and performance.
JP7682970B2Active Publication Date: 2025-05-26KK TOSHIBA +1
Patent Information
- Application Number
- JP2023173731
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2023-10-05
- Publication Date
- 2025-05-26
- Estimated Expiration
- 2043-10-05
Smart Images
Figure 0007682970000001 
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Figure 0007682970000003
Abstract
To provide a semiconductor device that can be subjected to low-temperature, short-time annealing processing for forming a breakdown voltage holding structure.SOLUTION: A semiconductor device has a cell region and a termination region adjoining the cell region. A first insulation film is provided on a first principal surface of a semiconductor part. In the cell region, a first semiconductor region of a first conductivity type provided at the semiconductor part, a gate electrode, and a gate insulation film covering the gate electrode are provided. A second semiconductor region of a second conductivity type provided between the first semiconductor region and the first principal surface over the terminal region from the cell region comes into contact with at least a part of the bottom surface of the gate insulation film. A first member is provided between the second semiconductor region and the first insulation film.SELECTED DRAWING: Figure 2
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Citation Information
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