Semiconductor device

Abstract

To provide a semiconductor device whose characteristic can be improved.SOLUTION: According to one embodiment, a semiconductor device includes a first conductive part, a second conductive part, a first semiconductor region, a third conductive part, and a first insulating part. A direction from the first conductive part to the second conductive part is along a first direction. The first semiconductor region has a first conductivity type. The first semiconductor region includes a first subregion, a second subregion, and a third subregion. A second direction from the first subregion to the second subregion intersects with the first direction. The third subregion exists between the first subregion region and the second conductive part in the first direction. The third subregion includes an opposite surface facing the second conductive part. The third subregion and the second conductive part are in Schottky contact. A direction from the opposite surface to the third conductive part is along the second direction. The first insulating part includes a first insulating region. At least a part of the first insulating region exists between the opposite surface and the third conductive part.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] Embodiments of the present invention relate to a semiconductor device.

Background Art

[0002] In semiconductor devices, improvement in characteristics is desired.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Embodiments of the present invention provide a semiconductor device capable of improving characteristics.

Means for Solving the Problems

[0005] According to an embodiment of the present invention, a semiconductor device includes a first conductive portion, a second conductive portion, a first semiconductor region, a third conductive portion, and a first insulating portion. A direction from the first conductive portion to the second conductive portion follows a first direction. The first semiconductor region has a first conductivity type. The first semiconductor region includes a first partial region, a second partial region, and a third partial region. A second direction from the first partial region to the second partial region intersects the first direction. The third partial region is between the first partial region and the second conductive portion in the first direction. The third partial region includes a facing surface facing the second conductive portion. The third partial region and the second conductive portion are in Schottky contact. A direction from the facing surface to the third conductive portion follows the second direction. The first insulating portion includes a first insulating region. At least a part of the first insulating region is between the facing surface and the third conductive portion.

Brief Description of the Drawings

[0006]

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[0007] Hereinafter, each embodiment of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationships between the thicknesses and widths of the respective parts, the ratios of the sizes between the parts, etc. are not necessarily the same as those in reality. Even when representing the same part, the dimensions and ratios may be represented differently in the drawings. In this specification and each figure, elements that are the same as those described above with respect to the previously shown figures are denoted by the same reference numerals, and detailed descriptions thereof are omitted as appropriate.

[0008] (First Embodiment) FIG. 1 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. As shown in FIG. 1, the semiconductor device 110 according to the embodiment includes a first conductive portion 51, a second conductive portion 52, a third conductive portion 53, a first semiconductor region 11, and a first insulating portion 41.

[0009] The direction from the first conductive portion 51 to the second conductive portion 52 is along the first direction. The first direction is defined as the Z-axis direction. One direction perpendicular to the Z-axis direction is defined as the X-axis direction. A direction perpendicular to both the Z-axis direction and the X-axis direction is defined as the Y-axis direction.

[0010] The first semiconductor region 11 has a first conductivity type. The first conductivity type is one of an n-type and a p-type. Hereinafter, the first conductivity type is assumed to be n-type.

[0011] The first semiconductor region 11 includes a first partial region 11a, a second partial region 11b, and a third partial region 11c. The second direction from the first partial region 11a to the second partial region 11b intersects the first direction. The second direction is, for example, the Y-axis direction.

[0012] The third partial region 11c is located between the first partial region 11a and the second conductive portion 52 in the first direction (Z-axis direction). The third partial region 11c includes a facing surface F1 facing the second conductive portion 52. The third partial region 11c and the second conductive portion 52 are in Schottky contact.

[0013] The direction from the facing surface F1 to the third conductive portion 53 is along the second direction (for example, the Y-axis direction).

[0014] The first insulating portion 41 includes a first insulating region 41a. At least a part of the first insulating region 41a is between the opposing surface F1 and the third conductive portion 53. For example, the first insulating portion 41 (for example, the first insulating region 41a) electrically insulates the second conductive portion 52 and the third conductive portion 53. For example, the first insulating portion 41 (for example, the first insulating region 41a) electrically insulates the third partial region 11c and the third conductive portion 53.

[0015] For example, the direction from a part of the third partial region 11c to the third conductive portion 53 may be along the second direction (for example, the Y-axis direction). The direction from at least a part of the second conductive portion 52 to the third conductive portion 53 may be along the second direction.

[0016] For example, by controlling the potential of the third conductive portion 53, the current flowing between the first conductive portion 51 and the second conductive portion 52 is controlled. The first conductive portion 51 functions as a drain electrode, for example. The second conductive portion 52 functions as at least a part of a source electrode. The third conductive portion 53 functions as a gate electrode, for example. The first insulating region 41a functions as a gate insulating film, for example. The semiconductor device 110 is a vertical transistor, for example.

[0017] In the semiconductor device 110, a Schottky barrier is formed at the interface between the third partial region 11c and the second conductive portion 52. The thickness (distance in the Z-axis direction) of the Schottky barrier can be controlled by the potential of the third conductive portion 53. When the Schottky barrier is thick, current does not substantially flow. Thereby, an off state is obtained. By controlling the potential of the third conductive portion 53, the Schottky barrier becomes thin, and for example, a tunnel current flows. By the flow of the tunnel current, an on state is obtained. According to the embodiment, a semiconductor device with improved characteristics can be provided.

[0018] For example, there is a vertical transistor of a reference example having a pnp structure. In this case, the body diode generated at the contact portion of the source electrode includes a pn junction. Therefore, a long time is required for recovery.

[0019] In contrast, in the embodiment, the region including the third partial region 11c and the second conductive portion 52 (the region including the Schottky contact) becomes the body diode. In the embodiment, since the body diode is a Schottky diode, recovery can be accelerated.

[0020] In the reference example using the pnp structure, the region including the first n region, the p region, and the second n region faces the gate electrode. Therefore, the gate length is long.

[0021] In contrast, in the embodiment, the third conductive portion 53 may face the interface (for example, the opposing surface F1) between the third partial region 11c and the second conductive portion 52. Therefore, the gate length is short. As a result, the total gate charge amount (Qg) is small. The gate capacitance is small. As a result, high-speed switching can be obtained. The loss is small. For example, the gate capacitance (Cg) and the gate-drain capacitance (Cgd) become small. As a result, the total gate charge amount (Qg) and the gate-drain charge amount (Qgd) are reduced. As a result, the loss of the gate driver can be reduced. For example, the switching speed can be increased. For example, the turn-on loss and the turn-off loss can be suppressed.

[0022] In addition to the opposing surface F1, the third conductive portion 53 may face a part of the third partial region 11c and a part of the second conductive portion 52. For example, the thickness of the third conductive portion 53 (the length along the first direction, that is, the Z-axis direction) may be thin. The thickness of the third conductive portion 53 may be, for example, 100 nm or less.

[0023] In the reference example using the pnp structure, it is difficult to reduce the width (the length in the Y-axis direction) of the source contact portion in consideration of misalignment. Therefore, it is difficult to reduce the pitch of the plurality of source contacts.

[0024] In contrast, in the embodiment, trench contacts are not required. The second conductive portion 52 only needs to be provided with a structure that contacts the third partial region 11c. In the embodiment, it becomes easy to reduce the pitch of a plurality of source contacts. For example, a small-sized and low-resistance semiconductor device can be provided.

[0025] In a reference example using a pnp structure, there is a parasitic bipolar structure. For example, when the hole current injected from the drain side becomes excessively large, avalanche breakdown is likely to occur.

[0026] In contrast, in the embodiment, there is no parasitic bipolar structure. Therefore, for example, a high avalanche breakdown voltage can be obtained.

[0027] As described above, according to the embodiment, a semiconductor device capable of improving characteristics can be provided.

[0028] As shown in FIG. 1, the first semiconductor region 11 may include a fourth partial region 11d and a fifth partial region 11e. In the second direction (Y-axis direction), the second partial region 11b is between the first partial region 11a and the fourth partial region 11d.

[0029] The fifth partial region 11e is provided between the first conductive portion 51 and the first partial region 11a. In this example, the fifth partial region 11e is also provided between the first conductive portion 51 and the second partial region 11b, and between the first conductive portion 51 and the fourth partial region 11d. The impurity concentration of the first conductivity type in the fifth partial region 11e is higher than the impurity concentration of the first conductivity type in the first partial region 11a. The fifth partial region 11e is, for example, an n + region. The first to fourth partial regions 11a to 11d are, for example, n regions. By providing the fifth partial region 11e, a good electrical connection can be obtained between the first semiconductor region 11 and the first conductive portion 51.

[0030] As shown in FIG. 1, the semiconductor device 110 may include a fourth conductive portion 54. The direction from the fourth partial region 11d to the fourth conductive portion 54 is along the first direction (Z-axis direction). The direction from at least a part of the third partial region 11c to the fourth conductive portion 54 is along the second direction (for example, the Y-axis direction). The first insulating portion 41 includes a second insulating region 41b. The second insulating region 41b is located between at least a part of the third partial region 11c and the fourth conductive portion 54 in the second direction (for example, the Y-axis direction). For example, the second insulating region 41b electrically insulates the third partial region 11c and the fourth conductive portion 54.

[0031] For example, the fourth conductive portion 54 is electrically connected to the second conductive portion 52. Or, the fourth conductive portion 54 may be electrically connected to the second conductive portion 52. In this example, by the wiring 54L, the fourth conductive portion 54 is electrically connected to the second conductive portion 52 via the fifth conductive portion 55. Terminals may be provided on the wiring 54L, and outside the semiconductor device 110, the terminals and the second conductive portion 52 may be electrically connected.

[0032] The potential of the fourth conductive portion 54 is set to the potential of the second conductive portion 52 (for example, the source potential). By providing the fourth conductive portion 54, the electric field in the first semiconductor region 11 can be controlled. For example, the concentration of the local electric field can be suppressed. For example, high reliability can be easily obtained.

[0033] As shown in FIG. 1, in the first direction (Z-axis direction), there is a second conductive portion 52 between the third partial region 11c and at least a part of the fifth conductive portion 55. The fifth conductive portion 55 is electrically connected to the second conductive portion 52 and the fourth conductive portion 54.

[0034] As shown in FIG. 1, the semiconductor device 110 may include a second insulating portion 42. The third conductive portion 53 is located between the second partial region 11b and the fifth conductive portion 55 in the first direction (Z-axis direction). At least a part of the second insulating portion 42 is located between the third conductive portion 53 and at least a part of the fifth conductive portion 55 in the first direction (Z-axis direction). In this example, the third conductive portion 53 is located between the second insulating region 41b and at least a part of the second insulating portion 42 in the first direction.

[0035] In an embodiment, the first semiconductor region 11 may include at least one selected from the group consisting of, for example, silicon (Si), nitride semiconductors (such as GaN, etc.), silicon carbide (SiC), and oxide semiconductors (such as GaO). When the first semiconductor region 11 includes silicon, the impurity of the first conductivity type includes at least one selected from the group consisting of, for example, phosphorus, arsenic, and antimony.

[0036] In one example, when the third partial region 11c of the first semiconductor region 11 includes silicon, the second conductive portion 52 includes at least one selected from the group consisting of Ti, W, Mo, Ta, Zr, Al, Sn, V, Re, Os, Ir, Pt, Pd, Rh, Ru, Nb, Sr, and Hf.

[0037] The third conductive portion 53 and the fourth conductive portion 54 may include at least one of, for example, polysilicon and metal. The fifth conductive portion 55 includes at least one selected from the group consisting of, for example, Al, Cu, Mo, W, Ta, Co, Ru, Ti, and Pt. The first conductive portion 51 includes, for example, Al, Cu, Mo, W, Ta, Co, Ru, Ti, Pt, etc.

[0038] FIG. 2 is a schematic cross-sectional view illustrating a part of a semiconductor device according to the first embodiment. FIG. 2 is an enlarged view of a region including the second conductive portion 52.

[0039] As shown in FIG. 2, the third partial region 11c may include a first region r1 and a second region r2. The first region r1 is between the second region r2 and the second conductive portion 52 in the first direction (Z-axis direction). The concentration of the impurity of the first conductivity type in the first region r1 is higher than the concentration of the impurity of the first conductivity type in the second region r2. The first region r1 is, for example, an n + region. The second region r2 is, for example, an n region. The first region r1 is thin. In one example, the thickness of the first region r1 along the first direction is 1 nm or more and 20 nm or less.

[0040] By providing the first region r1, for example, the thickness of the Schottky barrier when on (the length along the Z-axis direction) can be made thinner. As a result, the on-current can be increased.

[0041] As shown in FIG. 2, the second conductive part 52 may include a first conductive region c1 and a second conductive region c2. The first conductive region c1 is between the third partial region 11c and the second conductive region c2 in the first direction (Z-axis direction).

[0042] For example, the second conductive region c2 contains a first element. The third partial region 11c contains a second element. The first conductive region c1 contains a compound containing the first element and the second element. For example, the second conductive region c2 contains a first metal element. The third partial region 11c contains silicon. The first conductive region c1 contains a silicide containing the first metal element. The first metal element is at least one selected from the group consisting of, for example, Ti, W, Mo, Ta, Zr, Al, Sn, V, Re, Os, Ir, Pt, Pd, Rh, Ru, Nb, Sr, and Hf.

[0043] By providing the first conductive region c1 and the second conductive region c2 as described above, the first region r1 containing impurities of the first conductivity type at a high concentration is easily formed.

[0044] In one example, a metal layer that becomes the second conductive part 52 is formed on the silicon layer that becomes the third partial region 11c. The metal layer contains impurities of the first conductivity type. For example, by heat treatment or the like, a silicide region is formed in the portion of the metal layer on the side of the silicon layer. At this time, the impurities contained in the silicon layer before the silicide region is formed move downward (toward the first conductive part 51) from the silicide region. As a result, a region (for example, the first region r1) containing impurities at a high concentration is formed in the portion of the third partial region 11c facing the silicide region.

[0045] In one example, a metal layer serving as the second conductive portion 52 is formed on the silicon layer serving as the third partial region 11c, and impurity of the first conductivity type may be introduced into a part of the silicon layer through the metal layer. A region (for example, the first region r1) containing impurities at a high concentration is formed in a portion of the silicon layer facing the metal layer. For example, the concentration of the impurity of the first conductivity type in at least a part of the second conductive region c2 may be higher than the concentration of the impurity in at least a part of the first conductive region c1.

[0046] FIG. 3 is a schematic diagram illustrating a part of the semiconductor device according to the first embodiment. FIG. 3 illustrates the impurity profile in the region including the third partial region 11c and the second conductive portion 52. The horizontal axis in FIG. 3 is the position pZ in the Z-axis direction. The vertical axis is the concentration Cn1 of the impurity of the first conductivity type.

[0047] As shown in FIG. 3, the impurity concentration Cn1 in the first region r1 is higher than the impurity concentration Cn1 in the second region r2.

[0048] FIG. 4 is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment. As shown in FIG. 4, in the semiconductor device 111 according to the embodiment, the configuration of the first semiconductor region 11 is different from the configuration of the first semiconductor region 11 in the semiconductor device 110. Other configurations in the semiconductor device 111 are the same as those in the semiconductor device 110.

[0049] In the semiconductor device 111, the impurity concentration of the first conductivity type in the fourth partial region 11d is higher than the impurity concentration of the first conductivity type in the third partial region 11c. For example, the impurity concentration of the first conductivity type in the first partial region 11a is higher than the impurity concentration of the first conductivity type in the third partial region 11c. For example, the impurity concentration of the first conductivity type in the second partial region 11b is higher than the impurity concentration of the first conductivity type in the third partial region 11c. Also in the semiconductor device 111, a semiconductor device with improved characteristics can be provided.

[0050] FIG. 5 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. As shown in FIG. 5, in the semiconductor device 112 according to the embodiment, the second insulating portion 42 is provided for each of the plurality of third conductive portions 53. For example, the fifth conductive portion 55 passes between two second insulating portions 42 and contacts the fourth conductive portion 54. Other configurations in the semiconductor device 112 are the same as those in the semiconductor device 110. Also in the semiconductor device 112, a semiconductor device with improved characteristics can be provided.

[0051] FIG. 6 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. As shown in FIG. 6, in the semiconductor device 113 according to the embodiment, the plurality of structures illustrated in FIG. 1 are arranged in the Y-axis direction. In this example, the pitch of the plurality of second conductive portions 52 is smaller than the pitch of the plurality of fourth conductive portions 54. By using such a structure, for example, the on-resistance of a portion including a Schottky contact can be reduced while reducing the on-resistance of the drift portion (for example, the first semiconductor region 11).

[0052] In the semiconductor device 113, a plurality of second conductive portions 52 and a plurality of fourth conductive portions 54 are provided. The position of one of the plurality of second conductive portions 52 in one second direction (Y-axis direction) and the position of another of the plurality of second conductive portions 52 in another second direction are between the position of one of the plurality of fourth conductive portions 54 in one second direction and the position of another of the plurality of fourth conductive portions 54 in another second direction. The above-mentioned another one of the plurality of fourth conductive portions 54 is adjacent to the above-mentioned one of the plurality of fourth conductive portions 54.

[0053] The portion including the fourth conductive portion 54 and the portion including the second conductive portion 52 may be separately manufactured, and the semiconductor device 113 described above may be manufactured by joining these two portions to each other.

[0054] Alternatively, after forming the portion including the fourth conductive portion 54, a semiconductor layer may be regrown from the semiconductor region between the insulating portions to form the portion including the second conductive portion 52 and the third conductive portion 53. The regrowth includes, for example, lateral growth. The semiconductor device 113 may be manufactured by such a method.

[0055] FIG. 7 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. As shown in FIG. 7, the semiconductor device 114 according to the embodiment includes a second semiconductor region 12. Other configurations of the semiconductor device 114 may be the same as those of the semiconductor device 110.

[0056] The second semiconductor region 12 has a second conductivity type (for example, p-type). The second semiconductor region 12 is located between a part of the third partial region 11c and the second conductive portion 52 in the first direction (Z-axis direction). Another part of the third partial region 11c is located between the second semiconductor region 12 and the first insulating region 41a in the second direction (for example, Y-axis direction).

[0057] By providing the second semiconductor region 12, for example, the leakage current can be reduced. When the second semiconductor region 12 contains silicon, the impurity of the second conductivity type contains, for example, at least one selected from the group consisting of boron, gallium, and indium.

[0058] FIG. 8 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. As shown in FIG. 8, in the semiconductor device 115 according to the embodiment, in the Z-axis direction, one third conductive portion 53 overlaps with two regions of the first insulating portion 41 and the fourth conductive portion 54. A third insulating portion 43 is provided between the fourth conductive portion 54 and the third conductive portion 53. Other configurations of the semiconductor device 115 may be the same as those of the semiconductor device 110. Also in the semiconductor device 115, a semiconductor device with improved characteristics can be provided.

[0059] FIG. 9 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. As shown in FIG. 9, the semiconductor device 116 according to the embodiment includes a first member 61 in addition to the first conductive portion 51, the second conductive portion 52, the third conductive portion 53, the first semiconductor region 11, and the first insulating portion 41. Other configurations of the semiconductor device 116 may be the same as those of the semiconductor device 110.

[0060] As shown in FIG. 9, the first semiconductor region 11 includes first to fourth partial regions 11a to 11d. In this example, the first semiconductor region 11 further includes a fifth partial region 11e. In the second direction (Y-axis direction), the second partial region 11b is between the first partial region 11a and the fourth partial region 11d. The direction from the fourth partial region 11d to the first member 61 is along the first direction (Z-axis direction). The direction from at least a part of the third partial region 11c to the first member 61 is along the second direction (Y-axis direction). The first insulating portion 41 includes a second insulating region 41b. The second insulating region 41b is between at least a part of the third partial region 11c and the first member 61 in the second direction (Y-axis direction).

[0061] For example, the first member 61 is electrically connected to the second conductive portion 52. Or the first member 61 can be electrically connected to the second conductive portion 52. For example, the first member 61 may be electrically connected to the second conductive portion 52 via the fifth conductive portion 55 by a wiring 61L. For example, a terminal 61T may be provided on the wiring 61L, and the terminal 61T and the second conductive portion 52 may be connected outside the semiconductor device 116.

[0062] The resistivity of the first member 61 is higher than the resistivity of the fourth partial region 11d and lower than the resistivity of the second insulating region 41b. For example, the resistivity of the first member 61 is 5×10 7 Ωm or more and 8×10 11 Ωm or less.

[0063] According to an embodiment, for example, a minute current can flow through the first member 61 when it is off. Thereby, for example, the electric field in the third partial region 11c can be made uniform. For example, the charge amount Qoss between the source and the drain can be reduced. Thereby, for example, losses can be suppressed. For example, power consumption can be reduced. For example, the electric field applied to the gate insulating film can be reduced. For example, high reliability can be obtained. According to an embodiment, for example, a semiconductor device with improved characteristics can be provided.

[0064] The first member 61 may include various materials as follows. The first member 61 includes, for example, at least one selected from the group consisting of a first material, a second material, a third material, a fourth material, a fifth material, and a sixth material. The first material includes, for example, Si, N, and O.

[0065] The second material includes, for example, Si, N, and O. The second material includes, for example, Si-N bonds, N-O bonds, and N-N bonds. The second material includes, for example, oxygen-doped SIPOS (Semi-insulating Poly-crystalline Silicon). The second material is, for example, a mixed material of SiH 4 , N 2 O, and N 2

[0066] The third material includes Si, N, and O. The third material includes, for example, Si-N bonds, N-H bonds, and N-N bonds. The third material is, for example, nitrogen-doped SIPOS. The third material is a mixed material of SiH 4 , NH 3 , and N 2

[0067] The fourth material includes, for example, Si, C, and a first element. The first element includes at least one selected from the group consisting of B and N. The fifth material includes, for example, Si, O, and a second element. The second element includes at least one selected from the group consisting of Fe, Au, Ni, Ta, W, and Ti. The sixth material includes, for example, a third element and a fourth element. The third element includes at least one selected from the group consisting of In, Al, and Ga. The fourth element includes at least one selected from the group consisting of P, As, B, Fe, Au, Ni, Ti, Ta, W, and Ti.

[0068] With such materials, for example, the first member 61 can have an appropriate resistivity. Thereby, as described above, a semiconductor device with improved characteristics can be provided.

[0069] (Second Embodiment) FIG. 10 is a schematic cross-sectional view illustrating a semiconductor device according to the second embodiment. As shown in FIG. 10, the semiconductor device 120 according to the embodiment includes a first conductive portion 51, a second conductive portion 52, a first semiconductor region 11, a second semiconductor region 12, a third conductive portion 53, and a first insulating portion 41.

[0070] The direction from the first conductive portion 51 to the second conductive portion 52 is along the first direction (Z-axis direction).

[0071] The first semiconductor region 11 is of a first conductivity type (e.g., n-type). The first semiconductor region 11 includes a first partial region 11a, a second partial region 11b, and a third partial region 11c. The second direction from the first partial region 11a to the second partial region 11b intersects the first direction. The second direction is, for example, the Y-axis direction. The third partial region 11c is between the first partial region 11a and the second conductive portion 52 in the first direction (Z-axis direction).

[0072] The second semiconductor region 12 is provided between the third partial region 11c and the second conductive portion 52. The second semiconductor region 12 is of a second conductivity type (for example, p-type). The direction from at least a part of the second semiconductor region 12 toward the third conductive portion 53 is along a second direction (for example, the Y-axis direction). The first insulating portion 41 includes a first insulating region 41a. At least a part of the first insulating region 41a is between at least a part of the second semiconductor region 12 and the third conductive portion 53.

[0073] The semiconductor device 120 is, for example, a pn-type transistor. The height of the barrier formed between the first semiconductor region 11 and the second semiconductor region 12 can be controlled by the potential of the third conductive portion 53. Also in the semiconductor device 120, for example, the gate total charge amount (Qg) is small. For example, the gate capacitance (Cg) and the gate-drain capacitance (Cgd) become small. Thereby, the gate total charge amount (Qg) and the gate-drain charge amount (Qgd) are reduced. For example, the loss of the gate driver can be reduced. For example, the switching speed can be increased. For example, the turn-on loss and the turn-off loss can be suppressed. A semiconductor device capable of improving characteristics can be provided.

[0074] In the semiconductor device 120, the second conductive portion 52 may be continuous with the fifth conductive portion 55. The second conductive portion 52 may be integral with the fifth conductive portion 55.

[0075] FIGS. 11 and 12 are schematic cross-sectional views illustrating the semiconductor device according to the embodiment. As shown in FIGS. 11 and 12, in semiconductor devices 141 and 141a according to the embodiment, the second conductive portion 52 includes a first conductive portion 52p and a second conductive portion 52q. The second conductive portion 52q is between the third partial region 11c and the first conductive portion 52p. For example, the direction from the second conductive portion 52q to a part of the third partial region 11c is along the Y-axis direction. For example, the direction from the second conductive portion 52q to at least a part of the third conductive portion 53 is along the Y-axis direction. In this example, the second conductive portion 52q is between two parts of the third partial region 11c in the Y-axis direction. In a semiconductor device 141a, the side surface of the second conductive portion 52q may be inclined with respect to the Z-axis direction. Even in such a configuration, a semiconductor device with improved characteristics can be obtained. The configuration of the second conductive portion 52 described with respect to the semiconductor device 141 may be applied to any semiconductor device according to the first embodiment and the second embodiment.

[0076] According to the embodiment, a semiconductor device with improved characteristics can be provided.

[0077] In this specification, the "nitride semiconductor" refers to B x In y Al z Ga 1-x-y-z It includes semiconductors of all compositions in which the composition ratios x, y, and z are changed within their respective ranges in the chemical formula N(0≦x≦1, 0≦y≦1, 0≦z≦1, x + y + z≦1). Furthermore, in the above chemical formula, those that further include group V elements other than N (nitrogen), those that further include various elements added to control various physical properties such as conductivity type, and those that further include various elements contained unintentionally are also included in the "nitride semiconductor".

[0078] As described above, the embodiments of the present invention have been described with reference to specific examples. However, the present invention is not limited to these specific examples. For example, regarding the specific configurations of each element such as the conductive portion, semiconductor region, insulating portion, and wiring included in the semiconductor device, the present invention can be similarly implemented by appropriately selecting from the ranges known to those skilled in the art, and as long as the same effects can be obtained, it is included in the scope of the present invention.

[0079] In addition, combinations of two or more elements of any of the specific examples, as long as they are technically possible and fall within the scope of the gist of the present invention, are included in the scope of the present invention.

[0080] In addition, based on the semiconductor device described above as an embodiment of the present invention, all semiconductor devices that can be appropriately designed and modified by those skilled in the art also belong to the scope of the present invention as long as they fall within the scope of the gist of the present invention.

[0081] In addition, within the scope of the idea of the present invention, those skilled in the art can conceive of various modification examples and correction examples, and it is understood that those modification examples and correction examples also belong to the scope of the present invention.

[0082] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the gist of the invention. These embodiments and their modifications are included in the scope and gist of the invention, and are also included in the invention described in the claims and its equivalent scope.

Explanation of Reference Numerals

[0083] 11... semiconductor region, 11a - 11e... first to fifth partial regions, 12... second semiconductor region, 41... first insulating portion, 41a, 41b... first and second insulating regions, 42... second insulating portion, 43... third insulating portion, 51 - 55... first to fifth conductive portions, 52p, 52q... first and second conductive parts, 54L... wiring, 61... first member, 61L... wiring, 61T... terminal, 110 - 116, 120, 141, 141a... semiconductor devices, Cn1... concentration, F1... opposing surface, c1, c2... first and second conductive regions, pZ... position, r1, r2... first and second regions

Claims

1. A first conductive portion; a second conductive portion, the direction from the first conductive portion to the second conductive portion being a first direction; a first semiconductor region of a first conductivity type, the first semiconductor region including a first partial region, a second partial region, and a third partial region, a second direction from the first partial region to the second partial region intersects with the first direction, the third partial region is between the first partial region and the second conductive portion in the first direction, the third partial region includes an opposing surface opposing the second conductive portion, and the third partial region and the second conductive portion are in Schottky contact with each other; a third conductive portion, the direction from the opposing surface to the third conductive portion being the second direction; a first insulating portion including a first insulating region, at least a portion of the first insulating region being between the opposing surface and the third conductive portion; A fourth conductive portion; A fifth conductive portion; Equipped with The first semiconductor region further includes a fourth partial region, In the second direction, the second partial region is between the first partial region and the fourth partial region, a direction from the fourth partial region to the fourth conductive portion is the first direction, a direction from at least a part of the third region to the fourth conductive portion is the second direction; the first insulating portion includes a second insulating region, the second insulating region is located between the at least a portion of the third region and the fourth conductive portion in the second direction; the second conductive portion is located between the third partial region and at least a part of the fifth conductive portion in the first direction; the fifth conductive portion is electrically connected to the second conductive portion and the fourth conductive portion, A plurality of the second conductive portions; A plurality of the fourth conductive portions; Equipped with A semiconductor device, wherein a position of one of the plurality of second conductive parts in the second direction and a position of another one of the plurality of second conductive parts in the second direction are between a position of one of the plurality of fourth conductive parts in the second direction and a position of another one of the plurality of fourth conductive parts in the second direction, and the other one of the plurality of fourth conductive parts is adjacent to the one of the plurality of fourth conductive parts.

2. Further comprising a second insulating portion; the third conductive portion is located between the second partial region and the fifth conductive portion in the first direction, The semiconductor device according to claim 1 , wherein at least a portion of said second insulating portion is between said third conductive portion and at least a portion of said fifth conductive portion in said first direction.

3. A first conductive portion; a second conductive portion, the direction from the first conductive portion to the second conductive portion being a first direction; a first semiconductor region of a first conductivity type, the first semiconductor region including a first partial region, a second partial region, and a third partial region, a second direction from the first partial region to the second partial region intersects with the first direction, the third partial region is between the first partial region and the second conductive portion in the first direction, the third partial region includes an opposing surface opposing the second conductive portion, and the third partial region and the second conductive portion are in Schottky contact with each other; a third conductive portion, the direction from the opposing surface to the third conductive portion being the second direction; a first insulating portion including a first insulating region, at least a portion of the first insulating region being between the opposing surface and the third conductive portion; A fourth conductive portion; Equipped with The first semiconductor region further includes a fourth partial region, In the second direction, the second partial region is between the first partial region and the fourth partial region, a direction from the fourth partial region to the fourth conductive portion is the first direction, a direction from at least a part of the third region to the fourth conductive portion is the second direction; the first insulating portion includes a second insulating region, the second insulating region is located between the at least a portion of the third region and the fourth conductive portion in the second direction; A plurality of the second conductive portions; A plurality of the fourth conductive portions; Equipped with A semiconductor device, wherein a position of one of the plurality of second conductive parts in the second direction and a position of another one of the plurality of second conductive parts in the second direction are between a position of one of the plurality of fourth conductive parts in the second direction and a position of another one of the plurality of fourth conductive parts in the second direction, and the other one of the plurality of fourth conductive parts is adjacent to the one of the plurality of fourth conductive parts.

4. 4. The semiconductor device according to claim 1, wherein a concentration of the first conductive type impurity in said fourth partial region is higher than a concentration of the first conductive type impurity in said third partial region.

5. the first semiconductor region includes a fifth partial region, the fifth partial region is provided between the first conductive portion and the first partial region, 5. The semiconductor device according to claim 1, wherein a concentration of the impurity of the first conductivity type in the fifth partial region is higher than a concentration of the impurity of the first conductivity type in the first partial region.

6. Further comprising a second semiconductor region of the second conductivity type; the second semiconductor region is located between a part of the third region and the second conductive portion in the first direction; 6. The semiconductor device according to claim 1, wherein another part of said third partial region is between said second semiconductor region and said first insulating region in said second direction.

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