Photoelectric conversion device, photoelectric conversion system, mobile body

Abstract

To solve the problem in which: a photoelectric conversion system mounting a temperature sensor for abnormality detection cannot detect a failure related to output from the temperature sensor from image signals and cannot recognize a failure in the temperature sensor from the output from the temperature sensor, and thus cannot perform abnormality detection and detection to the outside of the photoelectric conversion system.SOLUTION: A photoelectric conversion device has: a pixel area including a plurality of pixels; a plurality of temperature sensors; a processing unit that performs comparison between signals based on output from the plurality of temperature sensors; and output means that outputs information based on a result of the comparison.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a photoelectric conversion device, a photoelectric conversion system, and a moving body using the photoelectric conversion system.

Background Art

[0002] Patent Document 1 discloses a photoelectric conversion device provided with a temperature sensor and observed to be within an operable temperature range by this temperature sensor.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] The photoelectric conversion device described in Patent Document 1 is equipped with a temperature sensor, and by performing temperature observation with this temperature sensor, it is possible to detect as an abnormality the case where the photoelectric conversion device is not within the temperature range in which it can operate normally.

[0005] Even when a failure occurs in the temperature sensor or on the path for reading the output of the temperature sensor, for example, when the temperature sensor becomes fixed to an output corresponding to the operable temperature range, it is difficult to detect a failure related to the temperature sensor output from the image signal. Also, since it is difficult to detect a failure from the temperature sensor output, it becomes difficult to detect an abnormality.

[0006] In the photoelectric conversion device described in Patent Document 2, two temperature sensors are provided near the output amplifier to drive the output amplifier with a lower temperature or to alternately drive the output amplifier to suppress heat generation. However, no consideration has been given to the case where either of the two temperature sensors fails or malfunctions. [Means for solving the problem]

[0007] One aspect of the present invention is a photoelectric conversion device characterized by having a pixel region including a plurality of pixels, a plurality of temperature sensors, a processing unit that compares signals based on the outputs of the plurality of temperature sensors, and an output means that outputs information based on the results of the comparison.

[0008] Another aspect of the present invention is a photoelectric conversion system comprising a photoelectric conversion device having a pixel region including a plurality of pixels and a plurality of temperature sensors, and a processing unit that performs a comparison of signals based on the outputs of the plurality of temperature sensors output from the photoelectric conversion device, and an output means that outputs information based on the results of the comparison.

[0009] A further aspect of the present invention is a semiconductor substrate stacked on a semiconductor substrate having a pixel region including a plurality of pixels, characterized in that it has a plurality of temperature sensors, a processing unit that compares signals based on the outputs of the plurality of temperature sensors, and an output means that outputs information based on the results of the comparison.

[0010] A further aspect of the present invention is a semiconductor substrate laminated on a first semiconductor substrate having a pixel region including a plurality of pixels and a first temperature sensor, characterized in that it has a processing unit for comparing signals based on the output of the first temperature sensor and an output means for outputting information based on the result of the comparison. [Effects of the Invention]

[0011] This device can detect abnormalities if the temperature sensor inside the photoelectric converter malfunctions or fails. [Brief explanation of the drawing]

[0012] [Figure 1] This is a schematic diagram of a photoelectric conversion device according to the first embodiment. [Figure 2] This is a flowchart showing the operation of the photoelectric converter according to the first embodiment. [Figure 3] This is a schematic diagram of the photoelectric conversion system according to the second embodiment. [Figure 4] This is a flowchart illustrating the operation of the photoelectric conversion system according to the second embodiment. [Figure 5] This diagram shows the configuration and operation of the mobile unit. [Modes for carrying out the invention]

[0013] The photoelectric conversion device according to embodiments of the present invention will be described below with reference to the drawings.

[0014] In the embodiments described below, the present invention will be explained primarily as an imaging device, but the application of each embodiment is not limited to imaging devices. For example, it can be applied to distance measuring devices (devices for distance measurement using focus detection or TOF (Time of Flight)), photometric devices (devices for measuring the amount of incident light, etc.).

[0015] (First embodiment) A first embodiment of the present invention will be described with reference to Figures 1 and 2.

[0016] Figure 1 is a schematic diagram of the photoelectric converter according to this embodiment. The photoelectric converter 100 of this embodiment includes a pixel area 102, a vertical scanning circuit 103, a column readout circuit 105, a column circuit array 106, a horizontal scanning circuit 107, a processing circuit 108, an output circuit 109, an input circuit 110, a control circuit 111, and a temperature sensor 112.

[0017] Multiple pixels 101 are arranged in an array within the pixel region 102. Each row of the pixel region 102 has a pixel signal line 104 extending in the column direction (vertical direction in Figure 1). The pixel signal line 104 is connected to each pixel in the column direction, forming a common signal line that outputs the charge generated in these pixels as a pixel signal.

[0018] Here, the number of pixels constituting the pixel region 102 is not particularly limited. For example, the pixel region 102 may be constituted by thousands of rows × thousands of columns of pixels like a general digital camera, or may be constituted by a plurality of pixels arranged in one row or one column.

[0019] The vertical scanning circuit 103 selects and drives the pixel rows of the pixel region 102.

[0020] The pixel signals read out from the pixels 101 are input via the pixel signal lines 104 to the column readout circuits 105 arranged for each column. The column readout circuits 105 are arranged in the column circuit array 106.

[0021] The horizontal scanning circuit 107 transfers a signal based on the pixel signal held in the column circuit array 106 to the processing circuit 108. The pixel signal is output to an imaging system (not shown) via the output circuit 109.

[0022] The input circuit 110 receives a control signal from outside the photoelectric conversion device and transmits the control signal to the processing circuit 108 and the control circuit 111.

[0023] The control circuit 111 controls the driving of the entire photoelectric conversion device.

[0024] Note that the column circuit 105 may include an AD conversion circuit, a CDS circuit, or an amplification unit that converts a pixel signal, which is an analog signal, into a digital signal. In this embodiment, the pixel signal is AD-converted by the column readout circuit 105 and transferred to the processing circuit 108 as a digital signal. Further, after being digitally processed by the processing circuit, it is output from the output circuit 109 to a signal processing circuit outside the photoelectric conversion device, and this output is a digital output method such as the LVDS method, for example. Depending on the processing result in the processing circuit, it is also possible to control the driving of the entire photoelectric conversion device or a part thereof via the control circuit from the processing circuit.

[0025] Outside the pixel region, a temperature sensor 1 (112a) and a temperature sensor 2 (112b) are arranged.

[0026] Temperature sensors commonly use diodes or bipolar transistor PN junctions, but they are not limited to these.

[0027] The output of temperature sensor 112a is converted AD by column reading circuit 105a, and the output of temperature sensor 112b is converted AD by column reading circuit 105b. The AD-converted temperature sensor outputs are compared by processing circuit 108, which is the processing unit.

[0028] If a difference exceeding a predetermined amount is detected between the outputs of temperature sensor 112a and temperature sensor 112b during the comparison in processing circuit 108, information is output from output circuit 109. For example, a period is provided at the beginning of the image data output from output circuit 109 to output warning information. If no difference exceeding a predetermined amount is detected, a digital value of 0 is output; if a difference exceeding a predetermined amount is detected, a digital value of 1 is output.

[0029] The method of outputting information is not limited to this; image output and information output may be separated. For example, the image signal may be output using the LVDS method, and the information may be output at a high or low level from a terminal separate from the LVDS output terminal.

[0030] Furthermore, while warning information was given as an example of the information to be output here, the information to be output is not limited to warning information; it is also acceptable to simply notify that the difference in output between temperature sensor 112a and temperature sensor 112b exceeds a predetermined value.

[0031] If a difference exceeding a predetermined amount is detected during the comparison of temperature sensor outputs in the processing circuit, information is output from the output circuit 109, and it is also possible to control the operation of the entire photoelectric converter or a part of the photoelectric converter via the control circuit.

[0032] For example, one could control the system to operate at low power only in areas related to a temperature sensor that detects a signal indicating high temperature. This reduces the possibility of overheating due to abnormal current flow caused by short circuits in the wiring or transistor failures.

[0033] Figure 2 illustrates the operation of the photoelectric converter according to this embodiment.

[0034] Figure 2 shows an operation in which signals based on the outputs of multiple temperature sensors are compared, and information is output when a difference exceeding a predetermined amount is detected as a signal based on the comparison result. This operation can be performed by temperature sensor 1, temperature sensor 2, column readout circuit 1, column readout circuit 2, input circuit, and processing unit.

[0035] The details of how it works are explained below.

[0036] First, in process S1-1, output OUT1 is obtained from temperature sensor 1, and in process S1-2, output OUT2 is obtained from temperature sensor 2.

[0037] In step S2-1, the column reading circuit 1 acquires a signal T1 based on the output OUT1 of the temperature sensor 1.

[0038] In step S2-2, the column reading circuit 2 acquires a signal T2 based on the output OUT2 of the temperature sensor 2. The column reading circuit 2 has a different path from the column reading circuit 1; in other words, the column reading circuit 1 and the column reading circuit 2 do not share any nodes.

[0039] In step S3, the input circuit acquires the input data Din.

[0040] In step S4, a predetermined amount of Tth is generated in the processing unit.

[0041] The predetermined quantity Tth can be generated based on at least one or more of the following: input data Din, a signal based on the output of the temperature sensor, information held in the processing circuit which is the processing unit, and information held in the non-volatile memory within the chip. More specifically, it is set by the output difference caused by noise in the temperature sensor and the column readout circuit, or by the output difference corresponding to the temperature difference caused by the difference in the positions in which temperature sensor 1 and temperature sensor 2 are arranged within the chip, or by the output difference due to manufacturing variations. Since the above output difference is a temperature-dependent quantity, the predetermined quantity may depend on the signal based on the output of the temperature sensor. In Figure 2, it is generated from the input data Din and signals T1 and T2 based on the output of the temperature sensor.

[0042] In addition, in this embodiment, a temperature upper limit equivalent amount Tlimit is also generated in step S4.

[0043] The temperature upper limit equivalent can be generated based on at least one or more of the following: the input data Din, the information held in the processing circuit 108 which is the processing unit, and the information held in the non-volatile memory within the chip.

[0044] In step S5, the difference between signals T1 and T2, which are based on the output of the temperature sensor, is compared with a predetermined amount Tth. If the difference between signals T1 and T2 exceeds the predetermined amount Tth, it is determined that there is a failure or malfunction in the temperature sensor or the column readout circuit that reads the output of the temperature sensor, and the information Salert is output from the output circuit 109.

[0045] Furthermore, it is possible to change the operating state of temperature sensor 1 and temperature sensor 2 at this time. Changing the operating state may include, for example, stopping the supply of power voltage, stopping some operations, or reducing the power consumption of the operation. The operation of other circuits of the temperature sensors may also be changed. In Figure 2, the control path for changing the operation is not explicitly shown, but the operation change may be performed via the control unit in the photoelectric converter.

[0046] In step S5, if the difference between signals T1 and T2 based on the output of the temperature sensor is less than or equal to a predetermined amount Tth, step S6 is performed. For example, in step S6, if at least one of signals T1 and T2 based on the output of the temperature sensor exceeds the upper temperature limit equivalent amount Tlimit, it is determined that the photoelectric converter is not within the temperature range in which it can operate normally. As a result, in step S7, the information Salert is output from the output circuit 109. Step S6 may be performed regardless of the result of step S5.

[0047] The information output from the output circuit 109 may be an integrated result of process S5 and process S6, or it may be independent of the results of process S5 and process S6.

[0048] (Second Embodiment) A second embodiment of the present invention will be described with reference to Figures 3 and 4. A detailed explanation of the configuration common to the first embodiment will be omitted, and the differences from Figures 1 and 2 will be described mainly.

[0049] The photoelectric conversion device described in the first embodiment above is applicable to various photoelectric conversion systems. Examples of applicable photoelectric conversion systems include cameras, camcorders, surveillance cameras, photocopiers, fax machines, mobile phones, in-vehicle cameras, and observation satellites. A camera module equipped with an optical system such as a lens and a photoelectric conversion device is also included in the photoelectric conversion system.

[0050] Figure 3 shows an example configuration of a photoelectric conversion system that includes a photoelectric conversion device equipped with a temperature sensor.

[0051] The photoelectric conversion system 200 differs from that shown in Figure 1 in that it has a signal processing unit 201, a signal output unit 202, and a control unit 203 located outside the photoelectric conversion device 100. The signal processing unit 201, signal output unit 202, and control unit 203 may be formed on the semiconductor substrate on which the photoelectric conversion device 100 is mounted, or they may be formed on a semiconductor substrate separate from the photoelectric conversion device 100.

[0052] The output from the photoelectric converter 100 is output to the outside of the photoelectric converter system (not shown) via the signal processing unit 201 and the signal output unit 202.

[0053] The signals T1 and T2, based on the output of the temperature sensor 112 of the photoelectric converter 100, are compared by the signal processing unit 201. If a difference exceeding a predetermined amount is detected during the comparison by the signal processing unit 201, information is output from the signal output unit 202.

[0054] In the comparison performed by the signal processing unit 202, if a difference exceeding a predetermined amount is detected, information is output from the signal output unit 202, and it is also possible to control the operation of the entire or a part of the photoelectric converter 110 via the control unit 203.

[0055] The pixel signals output from the pixels 101 of the photoelectric converter 100 undergo various corrections and compressions as needed by the signal processing unit 201 and the signal output unit 202, and are converted into image data.

[0056] The control unit 203 transmits a control signal to the input circuit 110 of the photoelectric converter 100.

[0057] Figure 4 illustrates the operation of the photoelectric conversion system according to this embodiment.

[0058] Figure 4 shows an operation in which signals based on the outputs of multiple temperature sensors are compared, and information is output when a difference exceeding a predetermined amount is detected as a signal based on the comparison result. This operation can be performed by a photoelectric converter, a signal processing unit, and a signal output unit.

[0059] The details of how it works are explained below.

[0060] First, in process S1-1, output OUT1 is obtained from temperature sensor 1, and in process S1-2, output OUT2 is obtained from temperature sensor 2.

[0061] In step S2-1, the column reading circuit 1 acquires a signal T1 based on the output OUT1 of the temperature sensor 1.

[0062] In step S2-2, the column reading circuit 2 acquires a signal T2 based on the output OUT2 of the temperature sensor 2.

[0063] In step S3, the input circuit acquires the input data Din.

[0064] In step S4, a predetermined amount of Tth is generated in the processing unit.

[0065] A predetermined amount Tth can be generated based on at least one or more of the following: input data Din, a signal based on the output of a temperature sensor, information held in the processing circuit 108 (which is the processing unit), and information held in the non-volatile memory within the chip. It may also be generated using input information from outside the photoelectric conversion system.

[0066] In addition, in this embodiment, a temperature upper limit equivalent amount Tlimit is also generated in step S4.

[0067] The temperature upper limit equivalent can be generated based on at least one or more pieces of information held in the signal processing circuit (the processing unit) and / or in the non-volatile memory within the imaging system.

[0068] Input information from outside the photoelectric conversion system may also be used.

[0069] In step S5, the difference between signals T1 and T2, which are based on the output of the temperature sensor, is compared with a predetermined amount Tth. If the difference between signals T1 and T2 exceeds the predetermined amount Tth, it is determined that there is a failure or malfunction in the temperature sensor, or in the column readout circuit that reads the output of the temperature sensor, the processing circuit 108, or the output circuit 109, and in step S7, the information Salert is output from the signal output unit.

[0070] In addition, the operation of temperature sensor 1 and temperature sensor 2 may be changed at this time. Changes to operation include, for example, stopping the power supply voltage, stopping some operations, or reducing power consumption during operation. The operation of other circuits of the temperature sensors may also be changed.

[0071] Although some of the control paths for the operation change are not explicitly shown in Figure 4, the operation change may be performed via a control unit outside the photoelectric converter and input and control circuits inside the photoelectric converter.

[0072] In step S5, if the difference between signals T1 and T2 based on the output of the temperature sensor is less than or equal to a predetermined amount Tth, step S6 is performed. For example, in step S6, if at least one of signals T1 and T2 based on the output of the temperature sensor exceeds the upper temperature limit amount Tlimit, it is determined that the temperature is outside the operating range of the photoelectric converter, and in step S7, the information Salert is output from the signal output unit.

[0073] Step S6 may be performed regardless of the result of step S5.

[0074] The information output from the signal output unit may be an integrated result of processes S5 and S6, or the results of process S5 and process S6 may be independent of each other.

[0075] (Third embodiment) The photoelectric conversion system and mobile unit of this embodiment will be described with reference to Figure 5. Figure 5 is a diagram showing the configuration of the photoelectric conversion system and mobile unit of this embodiment.

[0076] Figure 5(a) shows an example of a photoelectric conversion system related to an in-vehicle camera. The photoelectric conversion system 300 has an imaging device 310. The imaging device 310 is a photoelectric conversion device (imaging device) as described in any of the embodiments above. The photoelectric conversion system 300 has an image processing unit 312 that performs image processing on a plurality of image data acquired by the imaging device 310, and a parallax acquisition unit 314 that calculates parallax (phase difference of parallax images) from a plurality of image data acquired by the photoelectric conversion system 300. The photoelectric conversion system 300 also has a distance acquisition unit 316 that calculates the distance to an object based on the calculated parallax, and a collision determination unit 318 that determines whether or not there is a possibility of collision based on the calculated distance. Here, the parallax acquisition unit 314 and the distance acquisition unit 316 are examples of distance information acquisition means that acquire distance information to an object. That is, distance information is information related to parallax, defocus amount, distance to an object, etc. The collision determination unit 318 may use any of this distance information to determine the possibility of collision. The means for acquiring distance information may be implemented by specially designed hardware, or by a software module. It may also be implemented by an FPGA (Field Programmable Gate Array), an ASIC (Application Specific Integrated Circuit), or a combination thereof.

[0077] The photoelectric conversion system 300 is connected to the vehicle information acquisition device 320 and can acquire vehicle information such as vehicle speed, yaw rate, and steering angle. The photoelectric conversion system 300 is also connected to a control ECU 330, which is a control unit that outputs a control signal to generate braking force on the vehicle based on the judgment result of the collision judgment unit 318. The photoelectric conversion system 300 is also connected to a warning device 340 that issues a warning to the driver based on the judgment result of the collision judgment unit 318. For example, if the collision judgment result of the collision judgment unit 318 indicates a high probability of collision, the control ECU 330 performs vehicle control to avoid a collision or mitigate damage by applying the brakes, releasing the accelerator, or suppressing engine output. The warning device 340 warns the user by sounding an alarm, displaying warning information on a screen such as a car navigation system, or vibrating the seat belt or steering wheel.

[0078] In this embodiment, the photoelectric conversion system 300 images the area around the vehicle, for example, the front or rear. Figure 5(b) shows the photoelectric conversion system when imaging the area in front of the vehicle (imaging range 350). The vehicle information acquisition device 320 sends instructions to the photoelectric conversion system 300 or the imaging device 310. This configuration can further improve the accuracy of distance measurement.

[0079] The above example illustrates control to prevent collisions with other vehicles, but it can also be applied to control systems that automatically follow other vehicles or automatically drive to prevent vehicles from straying from their lanes. Furthermore, the photoelectric conversion system can be applied not only to vehicles such as the vehicle itself, but also to mobile objects (mobile devices) such as ships, aircraft, or industrial robots. In addition, it can be applied not only to mobile objects but also to a wide range of devices that utilize object recognition, such as intelligent transportation systems (ITS).

[0080] (Modified embodiment) The present invention is not limited to the embodiments described above and can be modified in various ways.

[0081] For example, examples in which some configurations of one embodiment are added to other embodiments, or in which some configurations of other embodiments are replaced, are also included as embodiments of the present invention.

[0082] Furthermore, the first and second embodiments described above are applicable to both non-stacked and stacked photoelectric converters.

[0083] For example, when using a stacked photoelectric converter, two temperature sensors may be placed on a certain layer and the output signals of the two temperature sensors may be compared, or one temperature sensor may be placed on the pixel-side substrate and one on the circuit-side substrate, and these may be compared. The number of temperature sensors on each substrate is not limited to two; for example, two temperature sensors may be placed on both substrates, and the two temperature sensors on each substrate, or two sets of temperature sensors on each substrate, may be compared. Furthermore, the number of stacked substrates is not limited to two; for example, a stacked structure of three or more layers may be created by dividing the circuit.

[0084] In the photoelectric conversion device shown in the first and second embodiments, since pixel signals are read from both the top and bottom of the chip, the column circuit array, horizontal scanning circuit, processing circuit, output circuit, and control circuit are provided on both the top and bottom of the chip. However, one of the circuits may be common to both the top and bottom. For example, the processing circuit and output circuit may be common to both the case of reading from the top of the chip and the case of reading from the bottom of the chip.

[0085] Alternatively, the pixel signal may be read out from only one side of the chip, rather than both the top and bottom sides.

[0086] The outputs of temperature sensor 1 and temperature sensor 2 are converted to AD by the column readout circuit of the column circuit array located below the pixel area. However, the outputs of temperature sensor 1 and temperature sensor 2 may also be distributed to the column readout circuits of the column circuit arrays located above and below for AD conversion. In this case, the processing circuit is common to both the upper and lower sections.

[0087] Alternatively, the temperature sensors 112a and 112b may include an AD conversion circuit, and the digital outputs from the temperature sensors may be compared by the processing circuit 108, which is the processing unit.

[0088] Furthermore, the photoelectric conversion systems shown in the second and third embodiments above are merely examples of photoelectric conversion systems to which the photoelectric conversion device can be applied, and the photoelectric conversion system to which the photoelectric conversion device of the present invention can be applied is not limited to the configuration shown in Figure 3.

[0089] The embodiments described above are merely examples of how the present invention can be implemented, and the technical scope of the present invention should not be interpreted as being limited by them. In other words, the present invention can be implemented in various ways without departing from its technical concept or its main features. [Explanation of Symbols]

[0090] 100 Photoelectric converter 102 pixel area 108 Processing Circuit 112a Temperature sensor 112b Temperature sensor 201 Signal Processing Unit

Claims

1. a pixel region including a plurality of pixels; a plurality of temperature sensors; a processing unit that compares signals based on outputs of the plurality of temperature sensors; The photoelectric conversion device further comprises an output means for outputting information based on the result of the comparison.

2. The photoelectric conversion device according to claim 1, characterized in that if the result of the comparison indicates that the difference between the signals based on the outputs of the plurality of temperature sensors exceeds a predetermined value, the information is output using the output means.

3. The predetermined value is 3. The photoelectric conversion device according to claim 2, wherein the plurality of temperature sensors include an output difference corresponding to a temperature difference caused by a difference in the positions at which the temperature sensors are disposed inside the photoelectric conversion device.

4. The predetermined value is 4. The photoelectric conversion device according to claim 2, wherein the output difference is due to manufacturing variations resulting from differences in the positions at which the plurality of temperature sensors are arranged inside the photoelectric conversion device.

5. The predetermined value is 5. The photoelectric conversion device according to claim 2, further comprising an output difference caused by noise in an output circuit that reads out the outputs of the plurality of temperature sensors.

6. 6. The photoelectric conversion device according to claim 2, further comprising setting means for setting the predetermined value from outside the photoelectric conversion device.

7. 7. The photoelectric conversion device according to claim 6, wherein said setting means changes said predetermined value in accordance with an output of said temperature sensor.

8. A photoelectric conversion device described in any one of claims 1 to 7, characterized in that if the result of the comparison indicates that a signal based on the output of any of the plurality of temperature sensors exceeds a predetermined range, the information is output using the output means.

9. The predetermined range is 9. The photoelectric conversion device according to claim 8, wherein the temperature is within a range corresponding to a temperature range in which the temperature sensor can operate normally.

10. 9. The photoelectric conversion device according to claim 1, wherein an output of the temperature sensor is output via at least a part of an output circuit for a signal generated in the pixel.

11. Among the plurality of temperature sensors, A photoelectric conversion device described in any one of claims 1 to 10, characterized in that a first path connecting a first temperature sensor and the processing unit and a second path connecting a second temperature sensor and the processing unit do not have any shared nodes.

12. 12. The photoelectric conversion device according to claim 1, wherein the result of the comparison is output via at least a part of an output circuit for a signal generated in the pixel.

13. 13. The photoelectric conversion device according to claim 1, wherein an operating state of the photoelectric conversion device is changed in accordance with a result of the comparison.

14. 14. The photoelectric conversion device according to claim 1, wherein the temperature sensor is a circuit using a diode.

15. A photoelectric conversion system comprising a signal processing unit that generates an image using a signal output from the photoelectric conversion device according to any one of claims 1 to 14.

16. a photoelectric conversion device having a pixel region including a plurality of pixels and a plurality of temperature sensors; a processing unit that compares signals output from the photoelectric conversion device based on outputs from the plurality of temperature sensors, The photoelectric conversion system further comprises an output means for outputting information based on the result of the comparison.

17. 17. The photoelectric conversion system according to claim 16, wherein when the result of the comparison indicates that the difference between the signals based on the outputs of the plurality of temperature sensors exceeds a predetermined value, information is output using the output means.

18. 18. The photoelectric conversion system according to claim 17, further comprising setting means for setting the predetermined value from outside the photoelectric conversion system.

19. 19. The photoelectric conversion system according to claim 18, wherein said setting means changes said predetermined value in accordance with an output of said temperature sensor.

20. 20. The photoelectric conversion system according to claim 16, wherein when the result of the comparison indicates that a signal based on the output of any one of the plurality of temperature sensors exceeds a predetermined range, the information is output using the output means.

21. The predetermined range is 21. The photoelectric conversion system according to claim 20, wherein the temperature range is within a range corresponding to a normal operating temperature range of the photoelectric conversion device.

22. 22. The photoelectric conversion system according to claim 16, wherein an operating state of the photoelectric conversion system is switched depending on the result of the comparison.

23. 23. The photoelectric conversion system according to claim 16, further comprising a signal processing unit that generates an image using a signal output from the photoelectric conversion device.

24. A moving body comprising the photoelectric conversion system according to any one of claims 15 to 23, A moving body comprising a control unit that controls the movement of the moving body using information output by the photoelectric conversion system.

25. A semiconductor substrate stacked on a semiconductor substrate having a pixel region including a plurality of pixels, a plurality of temperature sensors; and a processing unit that compares signals based on outputs of the plurality of temperature sensors; The semiconductor substrate further comprises an output means for outputting information based on the result of the comparison.

26. A semiconductor substrate laminated on a first semiconductor substrate having a pixel region including a plurality of pixels and a first temperature sensor, a processing unit for comparing a signal based on the output of the first temperature sensor; The semiconductor substrate further comprises an output means for outputting information based on the result of the comparison.

27. a second temperature sensor; a signal based on the output of the second temperature sensor; 27. The semiconductor substrate according to claim 26, wherein a signal based on an output of the first temperature sensor disposed on the first semiconductor substrate is compared.

Images