Semiconductor device

Abstract

To provide a semiconductor device capable of suppressing short circuits.SOLUTION: A semiconductor device of the embodiment has a semiconductor element having a first electrode and a second electrode opposite the first electrode in the first direction. A first conductive member has a first portion facing the first electrode in the first direction and a second portion at least partially separated from and facing the first portion in the first direction. A first connecting member is provided between the first electrode and the first portion and between the first portion and the second portion.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] FIELD An embodiment of the present invention relates to a semiconductor device. [Background technology]

[0002] A metal member called a lead frame or connector, for example, is used as a structure for electrically connecting electrodes of a semiconductor element to the outside of a semiconductor package. The metal member and the semiconductor element are electrically connected via solder or the like. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2008-227131 A Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present invention is to provide a semiconductor device capable of suppressing short circuits. [Means for solving the problem]

[0005] The semiconductor device of the embodiment includes a semiconductor element having a first electrode and a second electrode facing the first electrode in a first direction. A first conductive member has a first portion facing the first electrode in the first direction and a second portion facing and spaced apart from the first portion in the first direction. A first connection member is provided between the first electrode and the first portion, and between the first portion and the second portion.

[0006] In another embodiment, a semiconductor device includes a semiconductor element having a first electrode and a second electrode facing the first electrode in a first direction. The second conductive member has a fifth portion facing the first electrode in the first direction and a sixth portion facing the fifth portion in the first direction and spaced apart from the fifth portion in the first direction. The third conductive member has a seventh portion provided between the fifth portion and the sixth portion and in contact with at least a portion of the fifth portion and the sixth portion, and an eighth portion formed continuously with the seventh portion and spaced apart from the fifth portion in the first direction. A first connection member is provided between the first electrode and the fifth portion and at least a portion between the fifth portion and the eighth portion. [Brief description of the drawings]

[0007] [Figure 1A] 1 is a top view of a semiconductor device 1 according to a first embodiment. [Figure 1B] 1 is a perspective view of a semiconductor device 1 according to a first embodiment. [Diagram 2] 1B is a cross-sectional view of the cross section AA′ shown in FIG. 1A. [Figure 3A] 2 is a cross-sectional view taken along line AA′ of the semiconductor device 2 according to the second embodiment. [Figure 3B] 2 is a cross-sectional view taken along line AA′ of the semiconductor device 2 according to the second embodiment. [Figure 4] 2 is a cross-sectional view taken along line AA′ of a semiconductor device 3 according to a third embodiment. [Diagram 5] 13 is a cross-sectional view taken along line AA′ of a modified example of the semiconductor device 3 according to the third embodiment. FIG. [Figure 6] 2 is a cross-sectional view taken along line AA' of a semiconductor device 4 according to a fourth embodiment. [Figure 7] 7 is a cross-sectional view showing the BB' cross section shown in FIG. 5 or the CC' cross section shown in FIG. 6. [Figure 8] 7 is a cross-sectional view showing the BB' cross section shown in FIG. 5 or the CC' cross section shown in FIG. 6. [Figure 9] 7 is a cross-sectional view showing the BB' cross section shown in FIG. 5 or the CC' cross section shown in FIG. 6. [Figure 10]11 is a cross-sectional view taken along line AA' of a semiconductor device 5 according to a fifth embodiment. [Figure 11] 2 is a cross-sectional view taken along line AA' of a semiconductor device 6 according to a sixth embodiment. [Figure 12] 20 is a cross-sectional view taken along line AA' of a semiconductor device 7 according to a seventh embodiment. [Figure 13] 23 is a cross-sectional view taken along line AA′ of a modified example of the semiconductor device 7 according to the seventh embodiment. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0009] In addition, the drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios of each part may be different depending on the drawing.

[0010] For example, in the cross-sectional views shown in the present specification, some laminated structures are shown, but the thickness ratio of each layer of the laminated structure is not necessarily the same as that in reality. Even if one layer is shown thicker than the other layer in the cross-sectional view, in reality, the thickness of one layer and the other layer may be approximately the same, or one layer may be thinner than the other layer. In other words, the dimensions such as thickness shown in the drawings in the present specification may differ from the actual dimensions.

[0011] The direction from the second electrode 22 to the first electrode 21 is the Z direction (first direction). The direction perpendicular to the Z direction is the X direction (second direction), and the direction intersecting the X and Z directions is the Y direction (third direction). The semiconductor device 1 shown in FIG. 2 shows a cross-sectional view in the XZ plane. Note that the X, Y, and Z directions are shown in an orthogonal relationship in this embodiment, but are not limited to being orthogonal and may be in a mutually intersecting relationship. For the sake of explanation, the positive direction of the Z direction is called "up" and the negative direction of the Z direction is called "down". However, the "up" and "down" directions are not limited to the direction of gravity or the directions when the semiconductor device is mounted.

[0012] In this specification and each drawing, elements similar to those described above with reference to the previous drawings are given the same reference numerals and detailed descriptions thereof will be omitted as appropriate.

[0013] (First embodiment) Fig. 1A is a top view showing a semiconductor device 1 according to a first embodiment. Fig. 1B is a perspective view showing the semiconductor device 1 according to this embodiment. Fig. 2 is a cross-sectional view showing the AA' cross section in Fig. 1. First, the semiconductor device 1 will be briefly described with reference to Figs. 1A and 1B.

[0014] 1A, the semiconductor device 1 is sealed by a resin part 50. A part of the lead frame 10 or the first conductive member 11 protrudes from the resin part 50 for electrical connection with the outside. The resin part 50 is a sealing resin containing, for example, epoxy resin. The lead frame 10 and the first conductive member 11 are formed of a metal containing, for example, Cu.

[0015] FIG. 1A shows an example in which four lead frames 10 are provided on the first side surface 50c of the resin part 50, and four first conductive members 11 are provided on the second side surface 50d facing the first side surface 50c in the X direction. The number and shape of the lead frames 10 or the first conductive members 11 are not limited to those shown in FIG. 1A. For example, three or less lead frames 10 or first conductive members 11 may be provided on the first side surface 50c or the second side surface 50d of the resin part 50, or five or more lead frames 10 or first conductive members 11 may be provided on the lower surface 50b facing the upper surface 50a of the resin part 50 in the Z direction, or may be provided across the lower surface 50b and the first side surface 50c or the second side surface 50d.

[0016] The lead frame 10 and the first conductive member 11 are electrically connected to a semiconductor element 20, which will be shown later in Fig. 2. The semiconductor element 20 is covered with a resin part 50 in Fig. 1A and is not shown. The lead frame 10 is connected to, for example, a drain electrode of the semiconductor element 20. The first conductive member 11 is connected to, for example, a source electrode of the semiconductor element 20.

[0017] A portion of the first conductive member 11 protruding from the second side surface 50d may be connected to, for example, the gate electrode of the semiconductor element 20. In other words, of the multiple first conductive members 11 shown in Fig. 1A, some may be connected to the source electrode and some may be connected to the gate electrode. The portion of the first conductive member 11 connected to the source electrode and the portion connected to the gate electrode are electrically insulated.

[0018] As shown in FIG. 1B, a portion of the lead frame 10 and the first conductive member 11 protrudes from the resin portion 50 and is used for electrical connection with the outside. The portions of the lead frame 10 and the first conductive member 11 protruding from the resin portion 50 are called terminals. The shape of the terminal is not limited to that shown in FIG. 1B, and may be, for example, a gull-wing type or a J type. The gull-wing type is a shape in which a terminal extending in the X direction has a portion that is positioned differently in the Z direction. In other words, a step is provided so that the position in the Z direction becomes lower toward the tip of the terminal.

[0019] On the other hand, the J-shape is a shape in which, for example, the terminal of the first conductive member 11 is bent toward the negative direction of the Z direction in the XZ plane, and the tip of the terminal faces the negative direction of the X direction. The appearance of the semiconductor device 1 has been described above with reference to FIGS. 1A and 1B.

[0020] Next, the internal wiring structure of the semiconductor device 1 will be described in detail with reference to FIG.

[0021] Fig. 2 is an XZ cross-sectional view showing the A-A' cross section of Fig. 1A. As shown in Fig. 2, the semiconductor device 1 according to the first embodiment has a lead frame 10, a first conductive member 11, a semiconductor element 20, a first connecting member 31, a second connecting member 32, an insulating film 40, and a resin part 50. The first conductive member 11 has a first portion 11a and a second portion 11b.

[0022] The semiconductor element 20 has a first electrode 21 and a second electrode 22. The second electrode 22 is provided on the opposite surface to the first electrode 21 in the Z direction. The first electrode 21 and the second electrode 22 are formed of a metal containing Ni, for example, and are covered with Au. The semiconductor element 20 is, for example, a MOSFET. The first electrode 21 is, for example, a source electrode. The second electrode 22 is, for example, a drain electrode.

[0023] In addition to the first electrode 21, which is, for example, a source electrode, and the second electrode 22, which is, for example, a drain electrode, the semiconductor element 20 may be provided with a gate electrode (not shown). The gate electrode is formed, for example, on the same surface of the semiconductor element 20 as the surface on which the first electrode 21 is provided, and spaced apart from the first electrode 21. The gate electrode is electrically connected to the outside, for example, by a different conductive member spaced apart from the first conductive member 11, or by wire bonding or the like. The gate electrode is electrically insulated from the first electrode 21, and a different voltage can be applied thereto.

[0024] The first portion 11a faces the first electrode 21 of the semiconductor element 20 in the Z direction. The first portion 11a has a first surface F11 that is the surface opposite to the surface facing the first electrode 21. In addition, the second portion 11b has a second surface F12 that faces and is spaced apart from the first surface F11 in the Z direction.

[0025] The first portion 11a and the second portion 11b may be integrally formed. For example, the first portion 11a and the second portion 11b can be formed by bending the first conductive member 11. The structure of the first conductive member 11 shown in FIG. 2 can be formed by bending the first conductive member 11 in, for example, the X-Z plane. However, the structure of the first conductive member 11 is not limited to the case shown in FIG. 2, and the first portion 11a and the second portion 11b may be formed by bending the first conductive member 11 in, for example, the Y-Z plane.

[0026] The first connection member 31 is provided between the first electrode 21 and the first conductive member 11. The first connection member 31 is further provided at least partially between the first face F11 and the second face F12 of the first conductive member 11. For example, the first connection member 31 electrically connects at least a part of the first face F11 and the second face F12 that are spaced apart in the Z direction. Note that the first connection member 31 may be in contact with the first face F11 and not in contact with the second face F12. However, it is desirable for the first connection member 31 to be in contact with the first face F11 and the second face F12 and for the first face F11 and the second face F12 to be electrically connected in order to reduce electrical resistance.

[0027] The first connection member 31 is, for example, integrally formed from above the first electrode 21 to between the first face F11 and the second face F12. For example, the first connection member 31 is provided on the first electrode 21 and is formed by the melted first connection member 31 flowing into between the first face F11 and the second face F12. The shape of the first connection member 31 may be, for example, as shown in Fig. 2, a continuous shape surrounding the first portion 11a, or may be a shape that remains only on the first electrode 21 and the first face F11.

[0028] For example, during the manufacturing process, after the first connection member 31 reaches the first surface F11 in a continuous shape surrounding the first portion 11a, the first connection member 31 may be sucked in between the first portion 11a and the second portion 11b, causing the first connection member 31 to be formed discontinuously on the first electrode 21 and on the first surface F11.

[0029] The second connection member 32 electrically connects the second electrode 22 and the lead frame 10. The second connection member 32 may be formed from the same material as the first connection member 31. For example, the first connection member 31 and the second connection member 32 are solder.

[0030] The first conductive member 11 has a protruding portion 11p protruding from the resin portion 50. The second portion 11b and the protruding portion 11p of the first conductive member 11 are connected via, for example, a connecting portion 11g, and form the first conductive member 11 together with the first portion 11a. That is, in Fig. 2, the first conductive member 11 has the first portion 11a, the second portion 11b, the connecting portion 11g, and the protruding portion 11p. The first portion 11a, the second portion 11b, and the protruding portion 11p are formed of, for example, a metal containing Cu, and the connecting portion 11g is, for example, a solder.

[0031] The protruding portion 11p is made of, for example, the same material as the lead frame 10. The protruding portion 11p is, for example, cut from the lead frame 10 and bent to have the structure shown in FIG.

[0032] Also, the second portion 11b to the protruding portion 11p of the first conductive member 11 may be formed integrally, for example. That is, the second portion 11b and the protruding portion 11p may be formed continuously without providing the connecting portion 11g. The second portion 11b and the protruding portion 11p can be formed by bending the first conductive member 11, which is a continuous member. Therefore, the first conductive member 11 can also be formed to have at least the first portion 11a, the second portion 11b, and the protruding portion 11p.

[0033] The insulating film 40 is provided on at least a part of the first electrode 21 of the semiconductor element 20. The insulating film 40 is formed so as to cover, for example, at least a part of the outer edge of the first electrode 21. Here, the outer edge refers to the outer periphery of the first electrode 21 projected in the Z direction. The insulating film 40 is made of, for example, polyimide. The insulating film 40 can protect the first electrode 21 from moisture and the like that could not be prevented by the resin part 50.

[0034] The lead frame 10 and the first conductive member 11 are sealed with a resin part 50 except for a part of the lead frame 10 and the first conductive member 11. The resin part 50 is, for example, a sealing resin and may contain an epoxy resin. The parts of the lead frame 10 and the first conductive member 11 that are not sealed with the resin part 50 are used as the terminals shown in FIG. 1 for electrical connection to the outside.

[0035] The distance D1 in the Z direction between the first surface F11 and the second surface F12 is, for example, 30 μm or less. The thickness D2 in the Z direction of the first connection member 31 provided between the first electrode 21 and the first portion 11a is, for example, 30 μm or less. The shape and dimensions shown in FIG. 2 are for convenience of illustration, and the magnitude relationship between D1 and D2 is not limited to the dimensions shown in the figure. For example, D1 is approximately the same as D2 or smaller than D2.

[0036] Since the purpose of the first connection member 31 is to connect the first electrode 21 and the first portion 11a, it is desirable that the first connection member 31 between the first electrode 21 and the first portion 11a is provided without excess or deficiency. By forming D1 smaller than D2, it is possible to reduce the risk of the first connection member 31 being insufficient between the first electrode 21 and the first portion 11a. This is because, if D1 is larger than D2, the first connection member 31 is present in large amounts between the first portion 11a and the second portion 11b, and there is a risk of the first connection member 31 being insufficient between the first electrode 21 and the first portion 11a.

[0037] The electrical resistance of the first connection member 31 that electrically connects the first electrode 21 and the first portion 11a decreases as it is provided more widely on the first electrode 21. That is, it is undesirable that the first connection member 31 is insufficient on the first electrode 21. Therefore, in order to ensure the connection between the first electrode 21 and the first portion 11a, it is desirable to set D1 to be smaller than D2. The first connection member 31 can be formed between the first surface F11 and the second surface F12 while suppressing the obstruction of the electrical connection between the first electrode 21 and the first portion 11a.

[0038] Furthermore, by making D1 smaller, the first connection member 31 is formed over a wider portion between the first portion 11a and the second portion 11b. The first portion 11a and the second portion 11b are electrically connected over a wider portion via the first connection member 31, so that the electrical resistance of the semiconductor device 1 can be reduced.

[0039] In order to prevent a short circuit caused by the excess first connection member 31, D1 must have a certain size or more. In order to accommodate the excess first connection member 31 between the first portion 11a and the second portion 11b, D1 must not be too small. In other words, it is desirable to make D1 small within a range in which the excess first connection member 31 can be accommodated between the first portion 11a and the second portion 11b.

[0040] In the following, a manufacturing process of the semiconductor device 1 will be described, along with an example of connecting the first electrode 21 and the first conductive member 11 with the first connection member 31. The first connection member 31 is, for example, solder. First, the first connection member 31 is temporarily fixed onto the first electrode 21. Then, the first portion 11a of the first conductive member 11 is provided on the first connection member 31. At this time, the first connection member 31 is not formed between the first portion 11a and the second portion 11b.

[0041] Next, the temporarily fixed first connection member 31 is melted in a reflow process. The melted first connection member 31 connects the first electrode 21 and the first portion 11a. In this reflow process, the melted first connection member 31 flows between the first portion 11a and the second portion 11b, thereby obtaining the structure shown in FIG. 2.

[0042] In the reflow process, the amount of the first connection member 31 may be greater than the amount that fits between the first electrode 21 and the first portion 11a. That is, the first connection member 31 may overflow from between the first electrode 21 and the first portion 11a. The first connection member 31 that overflows from between the first electrode 21 and the first portion 11a flows into between the first portion 11a and the second portion 11b, thereby preventing the first connection member 31 from flowing out to the second electrode 22 of the semiconductor element 20.

[0043] The configuration of the semiconductor device 1 according to the first embodiment has been described above with reference to FIGS. 1 and 2. The effects of the semiconductor device 1 according to the present embodiment will be described below. In the semiconductor device 1 according to the present embodiment, the first conductive member 11 has a first portion 11a and a second portion 11b that are spaced apart and opposed to each other in the Z direction. The first connection member 31 is provided not only on the first electrode 21 but also on at least a portion between the first portion 11a and the second portion 11b. That is, the first connection member 31 extends not only between the first electrode 21 and the first portion 11a but also between the first portion 11a and the second portion 11b, and prevents the first connection member 31 from overflowing from the first electrode 21 toward the second electrode 22.

[0044] When connecting the first electrode 21 and the first conductive member 11 with the first connection member 31, a larger amount of the first connection member 31 may be provided to avoid an increase in resistance due to poor connection. By providing a larger amount of the first connection member 31, the space between the first electrode 21 and the first conductive member 11 can be reliably filled with the first connection member 31, and an electrical connection can be established. However, the first connection member 31 may overflow from between the first electrode 21 and the first conductive member 11, for example, in a reflow process in which the temporarily fixed first connection member 31 is melted.

[0045] Even if a surplus of the first connection member 31 occurs in this way, the first connection member 31 also spreads between the first portion 11a and the second portion 11b, thereby preventing the first connection member 31 from spreading in a direction that may cause a short circuit and impair the reliability of the semiconductor device, for example, toward the second electrode 22 of the semiconductor element 20. A short circuit caused by the first connection member 31 climbing over the insulating film 40 and reaching the second electrode 22 of the semiconductor element 20 can be prevented.

[0046] Providing the first portion 11a and the second portion 11b in the first conductive member 11 is possible, for example, by bending the first conductive member 11. The structure between the second portion 11b and the protruding portion 11p is not limited to the shape shown in FIG. 2. In other words, the effect of this embodiment can be obtained as long as the first portion 11a and the second portion 11b are spaced apart and opposed to each other in the Z direction. It is not necessary to change the shapes of the lead frame 10 or the semiconductor element 20, for example. In other words, this embodiment can be applied to conductive members of various shapes, and ultimately to various semiconductor devices.

[0047] The insulating film 40 is provided to protect the first electrode 21, but the adhesion between the insulating film 40 and the first connection member 31 may be inferior to that of the first conductive member 11. The first connection member 31 is, for example, solder, the first conductive member 11 is, for example, Cu, and the insulating film 40 is, for example, polyimide. Cu has better wettability with solder than polyimide. In other words, Cu has higher adhesion with solder than polyimide.

[0048] Because the adhesion between the insulating film 40 and the first connection member 31 is low, there is a risk that the first connection member 31 will be repelled from the insulating film 40 and climb over the insulating film 40, causing a short circuit. On the other hand, according to the semiconductor device 1 according to this embodiment, the first connection member 31 can adhere to the first conductive member 11, which has high adhesion, so it is possible to prevent the solder from being repelled by the insulating film 40 and causing a short circuit.

[0049] The molten first connection member 31 flows so as to surround the first conductive member 11, which has higher adhesion than the insulating film 40, and flows into between the first portion 11a and the second portion 11b. The first connection member 31 and the first conductive member 11 are also in close contact with each other on the first face F11 and the second face F12, and the first connection member 31 can be prevented from climbing over the insulating film 40. Therefore, it is possible to both protect the first electrode 21 with the insulating film 40 and prevent a short circuit caused by the first connection member 31.

[0050] According to the semiconductor device 1 of this embodiment, the first connection member 31 is formed between the first electrode 21 and the first portion 11a, and between the first portion 11a and the second portion 11b, thereby making it possible to suppress a short circuit caused by the first connection member 31. In other words, it is possible to improve the reliability of the semiconductor device.

[0051] Second embodiment 3A is an AA' cross-sectional view showing a semiconductor device 2 according to the second embodiment. It shows a cross-section equivalent to the AA' cross-section of FIG. 1A, which is a top view of the semiconductor device 1 according to the first embodiment. Therefore, in the following description, cross-sectional views of drawings that are not of the first embodiment may be referred to as the AA' cross-section for convenience. Some descriptions of parts common to the semiconductor device 1 according to the first embodiment will be omitted, and differences will be described.

[0052] 3A, a conductive film 61 is provided on a surface including at least a part of the first surface F11 of the first portion 11a and the second surface F12 of the second portion 11b. The conductive film 61 has better adhesion to the first connection member 31 than the first conductive member 11. For example, the conductive film 61 has higher wettability with the molten first connection member 31 than the first conductive member 11.

[0053] The conductive film 61 includes at least one metal species selected from the group consisting of Ni, Ag, and Sn, and is formed by, for example, plating a portion of the surface of the first conductive member 11.

[0054] The conductive film 61 may be formed continuously up to a portion of the first conductive member 11 that contacts the connection portion 11g. For example, when forming the conductive film 61 by plating, in order to reduce manufacturing costs, it is preferable to plate the entire surface rather than selectively plating the inside of the surface by masking.

[0055] The configuration of the semiconductor device 2 according to the second embodiment has been described above. The effects of the semiconductor device 2 according to the second embodiment will be described together with the effects of the modified example of the second embodiment after the description of the modified example of the second embodiment.

[0056] (Modification of the second embodiment) 3B is a cross-sectional view taken along line AA' of a semiconductor device 2 according to a modification of the second embodiment. Some of the descriptions of the parts common to the semiconductor device 1 according to the second embodiment will be omitted, and only the differences will be described.

[0057] As shown in FIG. 3B , at least a part of the first surface F11 of the first portion 11a and the second surface F12 of the second portion 11b of the first conductive member 11 is a rough surface portion 62. The rough surface portion 62 has a surface roughness greater than that of the original surface of the first conductive member 11. The rough surface portion 62 can also be obtained by roughening a part of the surface of the first conductive member 11 by, for example, sandblasting. The rough surface portion 62 has better adhesion to the first connecting member 31 than the first conductive member 11 before the treatment. For example, the wettability of the rough surface portion 62 with the molten first connecting member 31 is higher than that of the first conductive member 11 before the treatment.

[0058] The effects of the semiconductor device 2 according to the second embodiment or the modified example of the second embodiment will be described below. The semiconductor device 2 according to this embodiment has a conductive film 61 or a rough surface portion 62 that has excellent adhesion with the first connection member 31. Therefore, compared to the semiconductor device 1 according to the first embodiment, the first connection member 31 can be more closely attached between the first face F11 and the second face F12. Compared to the semiconductor device 1 according to the first embodiment, the higher adhesion can further suppress the first connection member 31 from climbing over the insulating film 40. It can further suppress the excess first connection member 31 from flowing toward the second electrode 22. That is, it is possible to suppress short circuits and improve reliability.

[0059] Third embodiment 4 and 5 are AA' cross-sectional views showing the semiconductor device 3 according to the third embodiment. Some of the parts common to the semiconductor device 1 according to the first embodiment will not be described, and only the different parts will be described. As shown in FIG. 4, the semiconductor device 3 according to this embodiment has a first through hole 11h that penetrates the first portion 11a of the first conductive member 11 in the Z direction.

[0060] The first connection member 31 fills at least a part of the first through hole 11h. In order to suppress an increase in electrical resistance, it is desirable that all of the first through holes 11h are filled with the first connection member. The first connection member 31 provided on the first electrode 21 passes through the first through hole 11h and reaches between the first portion 11a and the second portion 11b.

[0061] Also, the first connection member 31 may be formed continuously so as to wrap around the first conductive member 11, as in the case shown in Fig. 2. On the other hand, as shown in Fig. 5, the first connection member 31 may be formed in the gap between the first face F11 and the second face F12, passing only through the first through hole 11h. The BB' cross section shown in Fig. 5 will be explained after the explanation of Fig. 6.

[0062] The effects of the semiconductor device 3 according to this embodiment will be described below. According to the semiconductor device 3 according to this embodiment, by providing the first through hole 11h, the first connection member 31 is formed between the first face F11 and the second face F12 from above the first electrode 21 through the first through hole 11h. Therefore, compared to the semiconductor device 1 according to the first embodiment, the first connection member 31 is more easily formed between the first face F11 and the second face F12.

[0063] 5, the flow of the first connection member 31 from the center to the outer edge of the first electrode 21 in the reflow process can be suppressed compared to the case of the first connection member 31 having the shape shown in FIG. 2. This is because the excess first connection member 31 can pass through the first through hole 11h. Therefore, by suppressing the force of the first connection member 31 flowing toward the outer edge of the first electrode 21, the risk of a short circuit caused by the first connection member 31 can be further reduced.

[0064] According to the semiconductor device 3 of this embodiment, the first connection member 31 is formed between the first face F11 and the second face F12 through the first through hole 11h, and this makes it possible to prevent the first connection member 31 from overflowing onto the second electrode 22 of the semiconductor element 20. In other words, the reliability of the semiconductor device can be further improved.

[0065] (Fourth embodiment) 6 is an AA′ cross-sectional view showing a semiconductor device 4 according to a fourth embodiment. Some of the parts common to the semiconductor device 1 according to the first embodiment will not be described, and only the different parts will be described. As shown in FIG. 6, the semiconductor device 4 according to this embodiment has a first through hole 11h that penetrates the second portion 11b of the first conductive member 11 in the Z direction. The first connection member 31 at least partially fills the first through hole 11h.

[0066] In order to suppress an increase in electrical resistance, it is desirable that all of the first through holes 11h are filled with the first connection member. The first connection member 31 that passes through the first through holes 11h and is continuously formed on the surface of the second portion 11b opposite to the second surface F12 is covered with a resin part 50.

[0067] The effects of the semiconductor device 4 according to this embodiment will be described below. According to the semiconductor device 4 according to this embodiment, by providing the first through hole 11h, the first connection member 31 can be continuously formed through the first through hole 11h to the surface of the second portion 11b opposite to the second surface F12. This makes it possible to prevent the first connection member 31 from overflowing from the gap between the first surface F11 and the second surface F12.

[0068] Therefore, even if there is an excess of the first connection member 31 used to connect the first electrode 21 and the first conductive member 11 and it does not fit in the gap between the first face F11 and the second face F12, the first connection member 31 passes through the first through hole 11h and flows out to the face of the second portion 11b opposite the second face F12, thereby preventing the first connection member 31 from overflowing toward the second electrode of the semiconductor element 20.

[0069] Furthermore, while reducing D1 is desirable for reliable electrical connection between the first electrode 21 and the first portion 11a and for reducing the electrical resistance between the first portion 11a and the second portion 11b, there is a concern that reducing D1 may cause the excess first connection member 31 to not fit between the first portion 11a and the second portion 11b. According to the semiconductor device 4 of this embodiment, the first through hole 11h allows the excess first connection member 31 to escape to above the second portion 11b. Therefore, it is possible to reduce D1 while suppressing the concern that the first connection member 31 will overflow.

[0070] The semiconductor device 4 according to this embodiment is expected to suppress short circuits caused by the first connection members 31 even when the number of the first connection members 31 is greater than that of the semiconductor device 1 according to the first embodiment. In other words, it is possible to further increase the reliability of the semiconductor device.

[0071] The semiconductor device 4 according to the fourth embodiment has been described above. Next, the shape of the first through hole 11h common to the semiconductor device 3 according to the third embodiment already described in Fig. 4 and Fig. 5 and the semiconductor device 4 according to the fourth embodiment described in Fig. 6 will be further described.

[0072] 7, 8, and 9 show XY plan views along the line BB' in FIG. 5. Also, FIGS. 7, 8, and 9 can be interpreted as XY plan views along the line CC' in FIG. 6. FIG. 7 shows an example in which one first through hole 11h is provided. As shown in FIG. 8, a plurality of first through holes 11h may be provided in a direction (Y direction) intersecting the direction from B to B'. Furthermore, as shown in FIG. 9, a plurality of first through holes 11h may be provided in the direction from B to B' (X direction). The shape of the first through hole 11h is not limited to a rectangle as shown in FIGS. 7, 8, and 9, and may be, for example, an elliptical shape having no corners.

[0073] The first connection member 31 filling at least a part of the first through hole 11h generally has a different electrical conductivity from the first conductive member 11. For example, the first connection member 31 made of solder has a lower electrical conductivity than the first conductive member 11 made of Cu.

[0074] 7, for example, by providing the first through hole 11h so that the length in the Y direction is shorter than the length in the X direction, the current flowing in the direction from B to B' (X direction) mainly passes through the first conductive member 11. Therefore, an increase in resistance can be suppressed compared to a case in which the width of the first through hole 11h is made larger in the direction (Y direction) intersecting the direction from B to B' (X direction).

[0075] The length of the first through hole 11h in the direction from B to B' (X direction) is called L1, and the length in the direction intersecting therewith (Y direction) is called L2. L1 is, for example, longer than L2. L1 may be more than twice as long as L2, or more than three times as long as L2.

[0076] On the other hand, the wider the first through hole 11h is provided in the XY plane, the more efficiently the excess first connection member 31 can pass through the first through hole 11h, and the more the overflow of the first connection member 31 can be suppressed. That is, it is desirable to provide the first through hole 11h widely in the XY plane in order to suppress short circuits. On the other hand, the wider the first through hole 11h is provided, the more the electrical resistance between B-B' increases when the electrical conductivity of the first connection member 31 is lower than that of the first conductive member 11. Since there is such a trade-off relationship in the way the first through hole 11h is provided, in order to suppress short circuits and suppress an increase in electrical resistance, it is necessary to optimize the arrangement and area of ​​the first through hole 11h.

[0077] An example of a method for optimizing the arrangement and area of ​​the first through holes 11h will be described with reference to Fig. 8. The first conductive member 11 shown in Fig. 8 has a plurality of first through holes 11h in the Y direction. The interval between the first through holes 11h in the Y direction is referred to as L3.

[0078] With L1 and L3 fixed, the larger L2 is made, the larger the area of ​​the first through hole 11h becomes. On the other hand, by making L2 larger, the proportion of the current flowing in the X direction that passes through the first conductive member 11 decreases and the proportion that passes through the first connection member 31 increases, which may increase the electrical resistance between B-B'.

[0079] Therefore, by simultaneously changing L1 and L2, it is possible to optimize both the area and the electrical resistance of the first through hole 11h. For example, by increasing L1, it is possible to make it easier for the first connection member 31 to pass through the first through hole 11h over a wide range in the X direction, and by decreasing L2, it is possible to suppress an increase in the electrical resistance.

[0080] L1 is, for example, longer than L2. L1 may be more than twice as long as L2, or more than three times as long as L2. L3 is, for example, longer than L2. L3 may be more than twice as long as L2, or more than three times as long as L2.

[0081] Furthermore, by increasing or decreasing the number of first through holes 11h in the Y direction and by increasing or decreasing L3, the area of ​​the first through holes 11h in the XY plane can be increased or decreased.

[0082] 8, by changing L1, L2, L3 and the number of the first through holes 11h, the area of ​​the first through holes 11h can be changed to optimize the ratio of the first connection member 31 and the first conductive member 11. By changing L1, L2, L3 and the number of the first through holes 11h, it is possible to perform optimization so as to suppress short circuits and to suppress the electrical resistance to a predetermined value or less.

[0083] As shown in FIG. 9, the first through-hole 11h can also be divided in the X direction to provide a plurality of holes.

[0084] According to the semiconductor device 3 of the third embodiment described in Fig. 4 and Fig. 5, the first through hole 11h is at least partially filled with the first connection member 31, and the excess first connection member 31 spreads through the first through hole 11h, thereby suppressing short circuit failure due to the first connection member 31. Also, the shape of the first through hole 11h can be determined so as to suppress an increase in electrical resistance due to the provision of the first through hole 11h. The same effect can be obtained by the semiconductor device 4 of the fourth embodiment described in Fig. 6.

[0085] Fifth embodiment FIG. 10 is an AA′ cross-sectional view showing a semiconductor device 5 according to a fifth embodiment. Some of the descriptions of parts common to the semiconductor device 1 according to the first embodiment will be omitted, and only the differences will be described. As shown in FIG. 10, in the semiconductor device 5 according to this embodiment, the first conductive member 11 further has a third portion 11c. The third portion 11c is formed continuously with the second portion 11b.

[0086] The first conductive member 11 is formed with a first portion 11a, a second portion 11b, and a third portion 11c in this order. That is, the third portion 11c is formed between the protruding portion 11p and the second portion 11b. Note that the first portion 11a, the second portion 11b, and the third portion 11c are, for example, integrally formed, and are formed by bending the first conductive member 11.

[0087] The first portion 11a faces the first electrode 21 in the Z direction. A first surface F11 of the first portion 11a and a second surface F12 of the second portion 11b face each other and are spaced apart from each other in the Z direction. The third portion 11c faces the first electrode 21 in the Z direction.

[0088] The second portion 11b is located in the positive direction of the Z direction relative to the first portion 11a. The second portion 11b is located in the positive direction of the Z direction relative to the third portion 11c. The first portion 11a and the third portion 11c may be provided at the same height in the Z direction. Here, the height refers to, for example, the distance measured in the positive direction of the Z direction from the first electrode 21. By providing the first portion 11a and the third portion 11c at the same height in the Z direction, the thickness of the first connection member 31 in the Z direction can be made uniform between the first portion 11a and the first electrode 21 and between the third portion 11c and the first electrode 21, which is desirable because the first conductive member 11 can be provided flat on the first connection member 31.

[0089] The first connection member 31 is provided between the first electrode 21 and the first portion 11a, between the first electrode 21 and the third portion 11c, and between the first portion 11a and the second portion 11b. The first connection member 31 is, for example, integrally formed.

[0090] Furthermore, the first conductive member 11 may have a fourth portion 11d between the third portion 11c and the protruding portion 11p, the fourth portion 11d being provided higher than the third portion 11c. The fourth portion 11d is, for example, formed continuous and integral with the third portion 11c. By providing the fourth portion 11d higher than the third portion 11c, the fourth portion 11d is electrically connected to a portion of the semiconductor element 20 other than the first electrode 21 via the first connecting member 31, reducing the risk of causing a short circuit. Therefore, it is desirable for the first conductive member 11 to have the fourth portion 11d provided higher than the third portion 11c.

[0091] The effects of the semiconductor device 5 according to this embodiment will be described below. In the semiconductor device 5 according to this embodiment, the third portion 11c of the first conductive member 11 is formed between the protruding portion 11p and the second portion 11b, for example, continuously. According to the semiconductor device 5 according to this embodiment, the first connection member 31 is formed between the first portion 11a and the second portion 11b, so that it is possible to prevent the first connection member 31 from overflowing toward the second electrode 22 of the semiconductor element 20. In particular, it is possible to prevent the first connection member 31 from reaching the second electrode 22 along the side surface of the semiconductor element 20 opposite to the side surface closer to the protruding portion 11p of the first conductive member 11.

[0092] The semiconductor device 1 according to the first embodiment is superior to the semiconductor device 5 according to the present embodiment in the effect of suppressing the first connection member 31 from reaching the second electrode 22 along the side surface of the semiconductor element 20 that is closer to the protruding portion 11p of the first conductive member 11. On the other hand, the semiconductor device 5 according to the present embodiment is superior to the semiconductor device 1 according to the first embodiment in the effect of suppressing the first connection member 31 from reaching the second electrode 22 along the side surface of the semiconductor element 20 that is opposite to the side surface that is closer to the protruding portion 11p of the first conductive member 11. This is because the space into which the excess first connection member 31 flows is located at a different position in the X direction between the semiconductor device 1 according to the first embodiment and the semiconductor device 5 according to the present embodiment.

[0093] Furthermore, in the semiconductor device 5 according to the present embodiment, the path of a current passing through the first conductive member 11, for a current flowing from the first electrode 21 to the first conductive member 11 or a current flowing in the opposite direction, is shorter than that in the semiconductor device 1 according to the first embodiment. A current can flow from the first electrode through the first connection member 31 and the third portion 11c to the protruding portion 11p.

[0094] For example, the first conductive member 11 has a higher electrical conductivity than the first connection member 31. Therefore, in the semiconductor device 5 according to this embodiment, a current flows through a shorter path in the first conductive member 11, compared to the semiconductor device 1 according to the first embodiment, so that the electrical resistance can be reduced.

[0095] According to the semiconductor device 5 of this embodiment, a gap between the first portion 11a and the second portion 11b is formed at a position in the X direction different from that of the semiconductor device 1 of the first embodiment, and it is possible to suppress a short circuit caused by the first connection member 31. Furthermore, it is possible for a current to flow through a shorter path via the third portion 11c, and it is possible to reduce the electrical resistance.

[0096] Sixth embodiment 11 is an AA′ cross-sectional view showing a semiconductor device 6 according to a sixth embodiment. Some of the parts common to the semiconductor device 1 according to the first embodiment will not be described, and only the different parts will be described. As shown in FIG. 11, in the semiconductor device 5 according to this embodiment, the distance in the Z direction between the first portion 11a and the second portion 11b of the first conductive member 11 is not uniform.

[0097] A first connecting member 31 is provided at least partially between the first surface F11 and the second surface F12. The distance in the Z direction between the first surface F11 and the second surface F12 is D1. D1 is, for example, 30 μm or less. On the other hand, in a part of the second portion 11b, the distance D3 in the Z direction from the first surface F11 is smaller than D1.

[0098] The distance in the Z direction between the first portion 11a and the second portion 11b decreases in the negative direction of the X direction, for example, as shown in Fig. 11. In other words, the gap between the first portion 11a and the second portion 11b becomes narrower in the negative direction of the X direction.

[0099] D3 may be small enough to electrically connect the first portion 11a and the second portion 11b, and the first portion 11a and the second portion 11b may be in contact with each other at least in part. The first portion 11a and the second portion 11b are electrically connected by being in surface contact with each other in a part other than the part where the first portion 11a and the second portion 11b of the first conductive member 11 are continuously formed.

[0100] A structure in which the first portion 11a and the second portion 11b are in surface contact can be obtained, for example, by partially crushing the first conductive member 11 in the Z direction, as shown in Fig. 2. For example, the structure shown in Fig. 11 can be obtained by selectively applying pressure to the portion on the negative side of the X direction among the portions where the first portion 11a and the second portion 11b face each other in Fig. 2. For example, the structure shown in Fig. 11 extends in the Y direction. In other words, pressure may be applied uniformly in the Y direction to crush.

[0101] Note that a structure may be adopted in which pressure is applied partially in the Y direction to bring the first portion 11a and the second portion 11b into contact with each other. Although not shown in Fig. 11, for example, the first portion 11a and the second portion 11b may be in contact with each other at a part of an end of the gap between the first portion 11a and the second portion 11b on the positive side in the X direction. In other words, the first portion 11a and the second portion 11b may be in contact with each other by applying pressure locally in the Y direction.

[0102] If a gap is formed between the first portion 11a and the second portion 11b in at least a part of the Y direction, the first connection member 31 can flow in, thereby obtaining the effect of suppressing a short circuit. Furthermore, since the first portion 11a and the second portion 11b can be in contact with each other over a larger area, the electrical resistance can be reduced.

[0103] The configuration of the semiconductor device 6 according to the sixth embodiment has been described above. Next, the effects of the semiconductor device 6 according to this embodiment will be described. In the semiconductor device 6 according to this embodiment, the distance in the Z direction between the first portion 11a and the second portion 11b is not uniform. By forming a gap D3 smaller than D1, it is possible to fill the gap between the first portion 11a and the second portion 11b with a smaller amount of the first connection member 31 than in the semiconductor device 1 according to the first embodiment. Therefore, it is possible to reduce the portion where the first portion 11a and the second portion 11b are not electrically connected in the Z direction, thereby reducing the electrical resistance.

[0104] Furthermore, by making D3 small enough to electrically connect the first portion 11a and the second portion 11b, the current path can be further shortened and widened, thereby further reducing the electrical resistance between the first portion 11a and the second portion 11b.

[0105] According to the semiconductor device 6 of this embodiment, it is possible to reduce the electrical resistance by shortening or widening the path of the current flowing from the first portion 11a to the second portion 11b or the current flowing in the opposite direction. In other words, it is possible to provide a semiconductor device with low resistance and improved performance.

[0106] Furthermore, according to the semiconductor device 6 of this embodiment, the electrical connection between the first portion 11a and the second portion 11b is more reliable even when a smaller amount of the first connection member 31 is present between the first portion 11a and the second portion 11b, compared to the semiconductor device 1 of the first embodiment.

[0107] 2, when the amount of excess first connection member 31 is not so large as to fill the space between first portion 11a and second portion 11b, it is considered that the sealing resin forming resin portion 50 flows between first portion 11a and second portion 11b. As more sealing resin flows between first portion 11a and second portion 11b, the number of insulated portions increases, and therefore the electrical resistance between first portion 11a and second portion 11b increases.

[0108] On the other hand, according to the present embodiment, a part of the second portion 11b is in contact with the first portion 11a, so that the space between the first portion 11a and the second portion 11b can be reduced. Even if the amount of the surplus first connection member 31 is small, the gap into which the sealing resin that forms the resin portion 50 flows between the first portion 11a and the second portion 11b can be reduced.

[0109] According to the semiconductor device 6 of this embodiment, the distance in the Z direction between the first portion 11a and the second portion 11b is not uniform, so that the electrical resistance of the current flowing through the first portion 11a and the second portion 11b can be reduced.

[0110] Seventh embodiment 12 is an AA′ cross-sectional view showing a semiconductor device 7 according to this embodiment. Some of the parts common to the semiconductor device 1 according to the first embodiment will not be described, and only the different parts will be described. As shown in FIG. 12, the semiconductor device 7 according to this embodiment has a second conductive member 12 and a third conductive member 13 instead of the first conductive member 11.

[0111] The second conductive member 12 has a fifth portion 12a that faces the first electrode 21 in the Z direction. The fifth portion 12a faces the first electrode 21 in the Z direction and is electrically connected to the first electrode 21 via a first connection member 31. The fifth portion 12a has a third surface F21 on the side opposite to the surface that faces the first electrode 21 in the Z direction.

[0112] The second conductive member 12 also has a sixth portion 12b that faces and is spaced apart from the fifth portion 12a in the Z direction. The sixth portion 12b has a fourth surface F22. The fourth surface F22 faces and is spaced apart from the third surface F21 of the fifth portion 12a in the Z direction.

[0113] The second conductive member 12 is, for example, integrally formed, and the fifth portion 12a and the sixth portion 12b are made of the same material, for example, a metal containing Cu.

[0114] The third conductive member 13 has a seventh portion 13a. A fifth surface F31 of the seventh portion 13a of the third conductive member 13 is in at least partial contact with the third surface F21. In other words, the third surface F21 of the second conductive member 12 and the fifth surface F31 of the third conductive member 13 are electrically connected over the entire surface or at least a portion of the surface.

[0115] The seventh portion 13a also has a sixth surface F32 which is the surface opposite to the fifth surface F31. The sixth surface F32 is in at least partial contact with the fourth surface F22 of the sixth portion 12b of the second conductive member 12. That is, the fifth portion 12a and the sixth portion 12b of the second conductive member 12 which are spaced apart in the Z direction are electrically connected via the seventh portion 13a of the third conductive member 13. The third surface F21 and the fifth surface F31 are in contact, and the fourth surface F22 and the sixth surface F32 are in contact.

[0116] The third conductive member 13 has an eighth portion 13b in addition to a seventh portion 13a. The eighth portion 13b is, for example, integrally formed and continuous with the seventh portion 13a. The eighth portion 13b has a seventh surface F33 that is continuous with a fifth surface F31 of the seventh portion 13a. The seventh surface F33 is provided in the positive direction in the Z direction relative to the fifth surface F31. In other words, the third surface F21 and the seventh surface F33 are spaced apart in the Z direction.

[0117] At least a portion of the seventh surface F33 is in contact with the first connection member 31. The first connection member 31 is provided at least partially between the third surface F21 and the seventh surface F33 that are spaced apart in the Z direction, and electrically connects the third surface F21 and the seventh surface F33.

[0118] The distance D4 in the Z direction between the third surface F21 and the seventh surface F33 is approximately equal to or smaller than the distance D2 between the first electrode 21 and the fifth portion 12a. Here, D4 ​​is defined as the maximum value when the distance between the third surface F21 and the seventh surface F33 is not constant in the X direction. D4 is, for example, 30 μm or less.

[0119] The effects of the semiconductor device 7 according to this embodiment will be described below. According to the semiconductor device 7 according to this embodiment, the first connection member 31 is formed in a gap created by the separation in the Z direction between the third surface F21 of the second conductive member 12 and the seventh surface F33 of the third conductive member 13, and by preventing the first connection member 31 from overflowing, it is possible to prevent short circuit defects caused by the first connection member 31.

[0120] Furthermore, similarly to the semiconductor device 6 according to the sixth embodiment, the electrical resistance can be reduced by shortening and widening the current path compared to the semiconductor device 1 according to the first embodiment. That is, since the second conductive member 12 and the third conductive member 13 are electrically connected by the third surface F21 and the fifth surface F31 being in contact with each other, it is possible to shorten and widen the flow path of the current flowing from the first electrode 21 to the third conductive member 13 via the second conductive member 12, or the current flowing in the opposite direction.

[0121] Furthermore, it is possible to form the gap between the third face F21 and the seventh face F33, into which the first connection member 31 flows, so as to narrow in the negative X-direction. In the sixth embodiment, the shape of the gap is controlled by crushing a part of the first conductive member 11. In a manufacturing method in which the first conductive member 11 is crushed in the Z-direction, the malleability of the material of the first conductive member 11 may be affected by environmental changes such as temperature, and the final structure may be affected by deviations in the crushing position.

[0122] On the other hand, the structure according to the present embodiment controls the shape of the gap into which the first connecting member 31 flows by using a bent structure of the third conductive member 13. The bent structure of the third conductive member 13 can be molded, for example, by using a mold. Therefore, according to the present embodiment, the structure in which the gap into which the first connecting member 31 flows becomes narrower can be more precisely controlled compared to the sixth embodiment.

[0123] The semiconductor device 7 according to this embodiment can reduce electrical resistance while suppressing short circuit defects caused by the first connection members 31. Furthermore, the bent structure of the third conductive member 13 can precisely control the shape of the gap into which the first connection members 31 flow.

[0124] (Modification of the seventh embodiment) A semiconductor device 7' which is a modified example of the semiconductor device 7 according to the seventh embodiment will be described below. Some of the descriptions of the common parts with the semiconductor device 7 according to the seventh embodiment will be omitted, and only the different parts will be described. Figure 13 is an AA' cross-sectional view showing the semiconductor device 7' which is a modified example of the semiconductor device 7 according to the seventh embodiment.

[0125] In this modification, a second through hole 12h is provided penetrating the fifth portion 12a of the second conductive member 12 in the Z direction. The first connection member 31 reaches the third surface F21 of the second conductive member 12 from above the first electrode 21 through the second through hole 12h. The first connection member 31 may further reach the fourth surface F22 of the sixth portion 12b of the second conductive member 12.

[0126] The shape and arrangement of the second through holes 12h in the XY plane can be variously arranged, similar to those shown in FIGS.

[0127] D4 is approximately equal to or smaller than D2. A distance D5 in the Z direction between the third face F21 and the fourth face F22 is approximately equal to or smaller than D2. D5 is, for example, 30 μm or less. By setting D4 and D5 to lengths approximately equal to or smaller than D2, it is possible to reduce the risk of a shortage of the first connection member 31 between the first electrode 21 and the fifth portion 12a.

[0128] The effect of the modified semiconductor device 7' according to the seventh embodiment will be described below. In the semiconductor device 7' according to this modified embodiment, the third face F21 of the second conductive member 12 and the seventh face F33 of the third conductive member 13 are spaced apart in the Z direction, and the third face F21 of the second conductive member 12 and the fourth face F22 are spaced apart. At least a part of each of these gaps is filled with the first connection member 31. In the vicinity of both ends of the semiconductor element 20 in the positive and negative directions in the X direction, the first connection member 31 fills at least a part of the gap provided between the second conductive member 12 and the third conductive member 13. That is, it is possible to prevent the first connection member 31 from overflowing on both sides of the positive and negative directions in the X direction.

[0129] The semiconductor device 7' according to this modification can prevent the first connection members 31 from overflowing on both the positive and negative sides of the X-direction. This can prevent short circuits caused by the first connection members 31 on both side surfaces of the semiconductor element 20 in the X-direction, improving the reliability of the semiconductor device.

[0130] According to at least one of the embodiments described above, first connection member 31 is formed in at least a part of the gap provided in first conductive member 11, second conductive member 12, or third conductive member 13, thereby making it possible to prevent first connection member 31 from overflowing toward second electrode 22. By preventing a short circuit caused by first connection member 31, it is possible to improve the reliability of the semiconductor device.

[0131] The above describes the embodiments with reference to specific examples. However, the embodiments are not limited to these specific examples. In other words, designs that are appropriately modified by a person skilled in the art from these specific examples are also included within the scope of the embodiments as long as they have the characteristics of the embodiments. The elements, arrangements, materials, conditions, shapes, sizes, etc. of each of the above-mentioned specific examples are not limited to those exemplified, and can be appropriately modified.

[0132] In addition, the elements of each of the above-described embodiments can be combined to the extent technically possible, and combinations of these are also included in the scope of the embodiments as long as they include the features of the embodiments. In addition, within the scope of the concept of the embodiments, a person skilled in the art may come up with various modifications and alterations, and it is understood that these modifications and alterations also belong to the scope of the embodiments.

[0133] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims. [Explanation of symbols]

[0134] 10. Lead frame 11... First conductive member 11a...first part 11b...Second part 11c...3rd part 11d...4th part 11g... Connection 11h...1st through hole 11p...Protrusion 12...Second conductive member 12a...5th part 12b...6th part 12h...2nd through hole 13...Third conductive member 13a...7th part 13b...8th part F11, F12: First and second surfaces of the first conductive member F21, F22: Third and fourth surfaces of the second conductive member F31, F32, F33: 5th, 6th, and 7th surfaces of the third conductive member D1, D2, D3, D4, D5... Distance in Z direction L1, L2, L3...length 20. Semiconductor element 21...1st electrode 22...Second electrode 31... First connecting member 32...Second connecting member 40...Insulating film 50...Resin part 50a...Top surface 50b...Bottom surface 50c...1st side 50d...Second side 61 Conductive film 62...Rough surface area 1, 2, 3, 4, 5, 6, 7, 7'...Semiconductor device

Claims

1. a semiconductor element having a first electrode and a second electrode facing the first electrode in a first direction; a first portion facing the first electrode in the first direction; a second portion that is at least partially spaced apart from and faces the first portion in the first direction; A first conductive member having a first connection member provided between the first electrode and the first portion and between the first portion and the second portion; A semiconductor device having the above structure.

2. the first conductive member is a metal containing Cu, The first connection member is a solder. The semiconductor device according to claim 1 .

3. Further comprising an insulating film covering an outer edge portion of the first electrode. The semiconductor device according to claim 1 .

4. a first surface of the first portion opposite to a surface facing the first electrode, and at least a portion of a second surface of the second portion facing and separated from the first surface in the first direction are covered with a metal species different from that of the first conductive member; The semiconductor device according to claim 1 .

5. The semiconductor device according to claim 4 , wherein the metal species includes at least one of Ni, Ag, and Sn.

6. a first surface of the first portion opposite to a surface facing the first electrode, and a second surface of the second portion facing and separated from the first surface in the first direction, the surface roughness of at least a portion of the second surface is greater than that of other portions of the first conductive member; The semiconductor device according to claim 1 .

7. the first conductive member has a first through hole penetrating the first portion in the first direction; The first connection member fills at least a portion of the first through hole. The semiconductor device according to claim 1 .

8. the first conductive member has a first through hole penetrating the second portion in the first direction; The first connection member fills at least a portion of the first through hole. The semiconductor device according to claim 1 .

9. the first conductive member has a protrusion connected to the second portion, a length of the first through hole in a second direction that is a direction from the second portion to the protruding portion and intersects with the first direction is longer than a length of the first through hole in a third direction that intersects with the first direction and the second direction; The semiconductor device according to claim 7 or 8.

10. the first conductive member has a third portion formed continuously with the second portion, the third portion faces the first electrode via the first connection member, a distance in the first direction between the third portion and the first electrode is shorter than a distance in the first direction between the second portion and the first electrode; The semiconductor device according to claim 1 .

11. The first portion and the second portion of the first conductive member are in surface contact with each other at least in part. The semiconductor device according to claim 1 .

12. The first conductive member is integrally formed from the same material.

12. The semiconductor device according to claim 1, wherein the first insulating layer is a first insulating layer.

13. a semiconductor element having a first electrode and a second electrode facing the first electrode in a first direction; a fifth portion facing the first electrode in the first direction; a sixth portion that is at least partially spaced apart from and faces the fifth portion in the first direction; A second conductive member having a seventh portion provided between the fifth portion and the sixth portion and in contact with at least a portion of the fifth portion and the sixth portion; an eighth portion formed continuously with the seventh portion and spaced apart from the fifth portion in the first direction; A third conductive member having a first connection member provided at least partially between the first electrode and the fifth portion and between the fifth portion and the eighth portion; A semiconductor device having the above structure.

14. the fifth portion of the second conductive member has a second through hole penetrating in the first direction, The second through hole is at least partially filled with the first connection member. The semiconductor device according to claim 13.

15. a second connection member provided on the second electrode; a lead frame electrically connected to the second electrode via the second connection member; a resin portion that seals the semiconductor element, the first connection member, and the second connection member, and seals the first conductive member and a portion of the lead frame; Further comprising 12. The semiconductor device according to claim 1, wherein the first insulating layer is a first insulating layer.

16. a second connection member provided on the second electrode; a lead frame electrically connected to the second electrode via the second connection member; a resin portion that seals the semiconductor element, the second conductive member, the first connection member, and the second connection member, and seals the third conductive member and a portion of the lead frame; Further comprising The semiconductor device according to claim 13 or 14.

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